WO2020053371A1 - VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHT AUS EINEM IN EINEM FLIEßFÄHIGEN ZUSTAND BEREITGESTELLTEN MATERIAL AUF EINER OPTOELEKTRONISCHEN LEUCHTVORRICHTUNG - Google Patents
VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHT AUS EINEM IN EINEM FLIEßFÄHIGEN ZUSTAND BEREITGESTELLTEN MATERIAL AUF EINER OPTOELEKTRONISCHEN LEUCHTVORRICHTUNG Download PDFInfo
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- WO2020053371A1 WO2020053371A1 PCT/EP2019/074454 EP2019074454W WO2020053371A1 WO 2020053371 A1 WO2020053371 A1 WO 2020053371A1 EP 2019074454 W EP2019074454 W EP 2019074454W WO 2020053371 A1 WO2020053371 A1 WO 2020053371A1
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- underside
- delimiting
- lighting device
- region
- limiting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
- B29C39/02—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C39/10—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. casting around inserts or for coating articles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2063/00—Use of EP, i.e. epoxy resins or derivatives thereof, as moulding material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Definitions
- the present invention relates to a device and a method for producing a layer from a material provided in a flowable state on an optoelectronic lighting device.
- a material provided in the flowable state, in particular for forming a layer is applied to at least a certain area of a surface of the optoelectronic lighting device.
- the present invention is therefore based on the object of creating a possibility with which a layer of a material made available in the flowable state can be easily formed on a surface of an optoelectronic lighting device.
- a device according to the invention for producing a layer from a material provided in a flowable state on an optoelectronic lighting device comprises a, in particular plate-like, limiting device, and a holding device for holding the limiting device at a certain distance above the lighting device to form the layer between the limiting device and the lighting device.
- the layer to be produced can be formed in the space between a surface of the lighting device and the delimiting device arranged above, made of flowable material, such as silicone or epoxy resin, which is brought into the space from above.
- the limiting device can be removed again after the material has hardened. Curing, e.g. for shape stabilization, using the limiting device, while curing can take place without a limiting device.
- the delimiting device can be arranged at a fixed distance from the surface of the lighting device, a precisely defined layer thickness results, at least in some areas. Structures on the top of the layer can also be implemented, as will be explained below.
- the limiting device is preferably designed in the manner of a plate. It can be viewed as a type of upper base plate, on the underside of which, for example, a delimiting element can be arranged, which forms a wall and can be used as a lateral delimitation for the layer to be formed.
- a point contact between the limiting device and the lighting device or the top of the carrier can also be realized by means of the holding device.
- the layer formed can have a defined height or thickness, at least in one region, which corresponds to the distance between the delimiting device and the surface of the Illuminating device corresponds if the device is arranged as intended for producing the layer above the lighting device.
- a certain casting height for the originally flowable material can be achieved by means of the device according to the invention.
- the device according to the invention makes it possible, in particular, to implement layers over optoelectronic semiconductor components of the lighting device which have a certain thickness or have a certain structure on their upper side.
- Such a layer can have a positive influence on the emission properties of the semiconductor components, for example with regard to the color location distribution. If the layer is formed, for example, over the emission surface of an optoelectronic semiconductor component, its height can be determined relatively precisely. In this way, for example, a relatively narrow color location distribution can be ensured in the production of white LEDs.
- the delimiting device can have at least one opening running through from its top to its underside, in particular for introducing the material into the space between the delimiting device and the lighting device.
- the holding device can have at least one spacer.
- the spacer is preferably arranged on the delimiting device and / or an end of the spacer lying away from the delimiting device can be brought into contact with the lighting device.
- An underside of the delimiting device which faces the lighting device when the delimiting device is arranged at a distance above the lighting device, can have a structuring at least in a region of its underside, in particular for forming a structuring device complementary structure on top of the layer of flowable material.
- An underside and / or another surface side of the limiting device can have a non-stick coating. The limiting device can thus be removed more easily.
- the delimiting device is arranged at a distance above the lighting device, the area of the underside lies above a light-emitting area of an optoelectronic semiconductor component and the structuring is further configured such that an optical element can be formed in the layer above the light-emitting area.
- the optical element can be a lens.
- An underside of the delimiting device which faces the lighting device when the delimiting device is arranged at the distance above the lighting device as intended, can have a first area which is at a first distance from the top of the lighting device, and can have at least one second area which has one has a second distance from the top of the lighting device, which differs from the first distance.
- a layer can thus be formed from the flowable material and has different heights in different areas. This is advantageous, for example, if casting layers of different thicknesses are to be formed over adjacent optoelectronic semiconductor components, such as LEDs. In this way, for example, different degrees of conversion or color locations can be realized with a converter volume encapsulation. For example, adjacent LEDs can be coated with a potting compound in this way that "cold" white light is emitted over one LED and "warm” white light is emitted over the other LED.
- sedimentation can take place after the volume pouring. This can of course or e.g. be forced in a centrifuge. Due to the initially different fill levels over a chip, there are also different thicknesses of a sedimented phosphor layer. Using a subsequent grinding process in silicone as a clear component over the sedimented phosphor, a uniform component thickness can be achieved over the substrate. A different material as a clear component is also possible, e.g. Epoxy resin.
- the flowable material does not cover a first area of the lighting device, in particular a carrier top of the lighting device, and covers a second area of the lighting device adjacent to the first area.
- the limiting device can be dimensioned such that it at least substantially covers at least the second region.
- the entire second area can thus be provided with a layer which can have a defined height or can have different, defined heights in different areas and / or can have a defined structure in an area of its upper side.
- the device can have a delimiting element with an underside and at least one lateral surface, the delimiting element being designed, in particular to protect the first region from the flowable material, and can be temporarily arranged on the lighting device, in particular on the upper side of the support, such that the underside of the delimiting element contacts the first region and the lateral surface and / or an edge between the underside and the lateral surface delimits the first area from the second area.
- the device according to the invention can thus also have a delimiting element which can be brought with the underside onto the surface of the lighting device, which is in particular the top of the carrier.
- the underside can rest on the surface, and the delimiting device can be dimensioned such that the lateral surface and / or the edge delimits the first region from the second region.
- the flowable material can then be applied to the second area, the restriction device preventing - e.g. by the effect of the so-called "bleeding" - the flowable material reaches the first area from the second area and thus inadvertently wets it.
- the limiting device can be removed.
- the limiting device can thus serve as a kind of dam that covers the first area protects the surface of the lighting device from the material.
- the “dam” is only provided temporarily because the limiting device is removed after curing.
- the limiting element can be arranged or can be arranged on the limiting device, in particular on its underside.
- the limiting element can in particular be firmly connected to the limiting device.
- the edge can have a course which corresponds at least approximately to a boundary line between the first region and the second region.
- the first region can be delimited relatively precisely from the second region and in particular a slight wetting of the first region can also be avoided.
- the lateral surface of the delimiting element is preferably closed in a circumferential direction, in particular running parallel to the underside. The side surface can therefore form a completely continuous, closed partition.
- the underside and / or the edge of the delimiting element can be brought into contact with the lighting device, in particular the upper side of its support, over its entire length. This prevents the material from flowing from the second area to the first area along the entire boundary line between the first area and the second area.
- the underside and / or the edge and / or the lateral surface of the delimiting element can have a coating, in particular to avoid or limit the flow of the material along the delimiting element itself.
- the side surface can have a stop device.
- the stop device on the side surface can define a maximum fill level for the material.
- the limiting element can be formed at least partially from a deformable and / or elastic material.
- the limiting element can thereby be pressed onto the surface of the lighting device in an improved manner. This results in an improved seal between the two areas on the surface of the lighting device or the top of the carrier.
- the lateral surface of the delimiting element can extend, in particular in a straight line, at an angle of at least approximately 90 degrees to the underside or run upwards and outwards from the underside.
- the side surface can also be curved, in particular concave or convex, upwards and run outwards. In a plane perpendicular to
- the limiting element can have a rectangular, square or triangular cross section. Other cross-sectional shapes are also possible.
- the edge between the underside and the lateral surface can be rounded. The shape and the course of the lateral surface are reflected in the shape and in the course of a side surface of the layer formed from the flowable material that is formed on the lateral surface.
- the delimiting element can be designed in the form of a frame-like structure which surrounds an inner region, the inner region being preferably dimensioned such that at least one optoelectronic semiconductor component, in particular an LED chip, can be accommodated therein, with, further preferably, the lateral surface is the surface side of the frame-like structure that faces the interior region or that faces away from the interior region.
- the limiting device thus allows the formation of a layer of the originally flowable material around the semiconductor component. Depending on the dimensioning of the limiting device, the layer can be at a distance from the semiconductor component or can be connected flush with it.
- the delimiting element can in particular be designed in the form of a stamp, the underside of which has at least approximately the size and / or shape of the first region.
- the delimiting element can thus cover the first area on the surface of the lighting device, so that the surroundings of the covered first area can be covered with flowable material without the first area being wetted.
- Components used temporarily such as in particular the limiting element or the limiting device, can have a poorly adhering surface or a non-stick coating. This can make it easier to demould later.
- the invention also relates to a method for producing at least one layer on an optoelectronic lighting device, comprising the steps:
- the device can be fixed on the carrier, in particular clamped, or pressed on.
- Limiting device or an optoelectronic lighting device the application of flowable material is illustrated, and in addition different variants of a limiting device are shown, and
- the device 21 shown in FIGS. 1 to 3 comprises a delimiting element 23 with an underside 25 and at least one lateral surface 27.
- the delimiting element 23 has an at least approximately rectangular cross section and is preferably formed from a soft, deformable material.
- a circumferential direction U running perpendicular to the image plane the delimiting element 23 is completely closed.
- the delimiting element 23 thus forms a frame, as seen along its circumferential direction U, which can be, for example, rectangular or square or also ring-shaped.
- the lateral surface 27 is also completely closed, as seen along the circumferential direction U.
- the lateral surface 27 therefore forms a wall which surrounds an inner region 29 encompassed by the frame-like delimiting element 23.
- the limiting device 21 also has an upper, rigid limiting device 51, which is designed in the form of a base plate, on the underside of which the limiting element 23 is arranged.
- the base plate 51 has at least one opening from its top to its bottom through which the inner region 29 is accessible.
- at least one flowable material 55 in particular in the form of a layer, can be applied to a plate-like carrier 33 of an optoelectronic lighting device 31.
- the carrier 33 comprises a substrate 39 and one
- Metallization layer 37 This can be divided into individual partial areas that are electrically separated from one another.
- the layer 37 can therefore not be arranged on the entire upper side 35 of the carrier 33, but only on one
- At least one optoelectronic semiconductor component 41 which can be, for example, an LED chip, is also arranged on the upper side 35 of the carrier 33.
- a light-emitting region is formed on the upper side of the semiconductor component 41 and is covered by an optional, in particular transparent, material layer 43.
- the semiconductor component 41 can be electrically connected to the metallization layer 37 via at least one bonding wire 45.
- the lighting device 31 it is provided in the lighting device 31 that at least one layer of at least one material 55, which is processed in the flowable state, is applied to the upper side 35 of the carrier 33.
- the material 55 should not cover a first region 47 on the upper side 35 of the carrier and should cover a second region 49 adjacent to the first region 47 on the carrier surface 35.
- carrier top or “carrier surface” are to be understood broadly and in particular should also include surface areas of elements or devices which are arranged on the carrier 33.
- vertical dashed lines are drawn in FIG. 1.
- the boundary line G between the two regions 47, 49 also extends in the plane of the upper side 35 of the carrier.
- the material 55 is processed in the flowable state and in particular applied to the upper side 35 of the carrier. It then hardens, for example in a thermal process.
- the limiting device 21 is used to apply the material 55 in the flowable state to the upper side 35 of the carrier 33. This is temporarily arranged on the upper side 35 and removed again after hardening or hardening.
- the side surface 27 can be made of a material, for example with poor adhesion or poor wettability.
- the underside 23 and / or the lateral surface 25 and / or an optionally rounded edge 61 between the underside 23 and the lateral surface 25 is / are designed and dimensioned such that the delimiting device 21 when the underside 23 rests on the carrier surface 35, delimits the first region 47 with respect to the second region 49.
- the edge 61 running between the underside 25 and the lateral surface 27 has a course along the circumferential direction U which corresponds at least approximately to the boundary line G between the first region 47 and the second region 49 when the underside 25 rests on the carrier surface 35 .
- the edge 61 can be brought into contact with the upper side 35 of the carrier over its entire course along the boundary line G.
- the edge 61 and the lateral surface 27 can thus form a lateral boundary for the material 55 applied to the second region 49 by means of an application device 53, as illustrated in particular in FIG. 2.
- the application device 53 can act like a type of dispenser, which dispenses the flowable material 55 via a downward-directed nozzle, so that the flowable material 55 can be applied to the surface 35 from above (cf. FIG. 2).
- the limiting device 21 can, like a stamp, be temporarily arranged on the carrier surface 35 or pressed onto the carrier surface 35 with a force F indicated in FIG. 2.
- the limiting device 21 can therefore also be regarded as a kind of stamping tool.
- the force F can be generated, for example, in that the limiting device 21 clamps on the carrier surface 35 or is pressed onto the carrier surface 35 by means of a corresponding device.
- the area between the edge 61 and the surface 35 can be sealed particularly well, and thus the material 55 can be prevented from flowing over the boundary line G and onto the first area 47.
- the sealing effect can be further improved by designing the limiting element 23 from a soft, deformable material.
- a coating can be provided on the side surface 27, the underside 25 and / or the edge 61, which brings about a better seal.
- the material 55 can be filled up to a desired level laterally next to the wall formed by the lateral surface 27 of the delimiting element 23.
- a stop device 57 can be arranged on the lateral surface 27. This can comprise a plurality of stop elements which protrude from the lateral surface 27 at a certain distance from the underside 25 and as seen in the direction of rotation U offset from one another.
- the stop device 57 can also be designed as a circumferential collar which projects from the lateral surface 27. The stop device 57 can prevent the material applied by means of the application device 53 from exceeding the height level of the stop device 57 (cf. FIG. 2).
- a maximum filling level for the flowable material 55 can thus be achieved or ensured by means of the stop device 57.
- the stop device 57 can have a surface made of a weakly adhering material. The removal of the limiting device 21 can thereby be facilitated. After the material 55 has hardened, the
- Limiting device 21 can be removed again, as shown in FIG. 3. Curing, e.g. for shape stabilization, with the limiting device 21, whereas the material 55 can harden without the limiting device 21. There is a clear demarcation between the uncovered first area 47 and the second area 49 covered with material 55. A flow, which is also referred to as "bleeding", of the still flowable material 55 into the first area 47 could thus be achieved by using the Limiting device
- Limiting device 21 differs from that
- the limiting element 23 has a triangular cross-sectional area.
- the side surface 27 is outside.
- Limiting element 23 when it is brought into contact with the upper side 35 of the carrier 33 with its lower side 25, covers a first region 47 of the upper side 35 of the carrier and thus separates this from the adjacent, outer, second region 49.
- the semiconductor component 41 can be a light-emitting chip which has a light exit region on its lateral surface.
- the chip can in particular be an LED designed as a volume emitter.
- the flowable material 55 can in turn be applied to the second region 49 by means of an application device 53, as shown in FIG. 2.
- the oblique upward and outward lateral surface 27 results in a corresponding bevel 59 on the surface side of the layer formed by the material 55 facing the semiconductor component 41 (cf. FIG. 6).
- the material 55 has a defined shape of the flank opposite the light exit area. This can bring about an improved beam shaping and thus an improved coupling-out efficiency. This is illustrated in FIG. 6 by the arrows P, which show the light path of the light emitted by the semiconductor component 41 as an example.
- the limiting device 21 described with reference to FIGS. 7 to 9 has a limiting element 23 attached to the base plate 51, which, in contrast to the limiting elements described above, does not have a frame-like structure, but at least approximately in the form of an ellipsoidal, ball or egg-shaped structure is formed.
- the underside 25 of the delimiting element 23 can, as shown in FIG. 8, be applied to the upper side of the material layer 43.
- the underside 25 is dimensioned such that it at least approximately covers an emission surface of the semiconductor component 41 and can thus protect a defined first region 47 on the top side 35 of the carrier 33 from material applied in a flowable state.
- the edge of the emission surface can thus be delimited by adjacent material layers 55a, 55b.
- an improved contrast can be achieved in the light emitted by the semiconductor component 41.
- the underside 25 with the edge 61 running in the circumferential direction U can in turn, as previously described, be pressed onto the first region 47 with a force F.
- An effective seal can thereby be achieved and a bleeding of flowable material onto the first region 47 can be avoided.
- a coating can further improve the sealing effect.
- two layers 55a, 55b made of different materials which are applied in a flowable state by means of the device 53, are applied to the second region 49 of the upper side 35.
- the lateral surface 27 of the delimitation element 23 forms a circumferential wall for the material layers 55a, 55b that runs in the circumferential direction U of the delimitation element 23. These can be formed up to this boundary wall. Due to their shape, as shown in FIG. 9, a type of crater can be formed laterally above the material layer 43 by the material layers 55a, 55b, in particular if the casting heights are sufficiently high. The crater can improve the beam quality of the light emitted from the semiconductor device 41.
- the limiting device 21 of FIGS. 7 and 8 can in turn be regarded as a type of stamp which is temporarily arranged on the top of the layer 43 to form the layers 55a, 55b and to protect the first region 47.
- the limiting device 21 can also be used for use in screen-printed layers. 10 to 12 show a temporary delimitation device 21 or an optoelectronic lighting device 31.
- the device 21 is also suitable for producing at least one defined layer from the material 55 provided in the flowable state.
- the device 21 has a delimitation device in the form of the delimitation plate 51 and a holding device 63 for holding the delimitation plate 51 at a certain distance A above the upper side 35 of the carrier 33 when the device 21 lies on the upper side 35 as intended.
- the holding device 63 can be designed in the form of one or more, for example rod-shaped, spacers which are arranged on the delimitation plate 51 and whose end remote from the delimitation plate 51 lies at a distance A below the delimitation plate 51.
- the holding device 63 is preferably rigid, so that it can strike the top 35 when the device 21 is pressed onto the top 35.
- a limiting element 23 is also arranged on the underside of the limiting plate 51, as previously described. However, for the use of the device for producing the at least one layer 55 with a certain height, the delimiting element can only be seen as an optional device.
- the boundary plate 51 has openings 73 which pass through from its upper side 65 to its lower side 67 and are provided in particular for introducing the material to form the material layer 55 between the boundary plate 51 and the carrier upper side 35.
- FIG. 11 shows two different configurations of the boundary plate 51.
- the boundary plate 51 In the upper part of FIG. 11 (cf. FIG. 11a), the boundary plate 51 has a flat upper side 65 and formed with a flat bottom 67.
- a layer 55 can be formed from the material provided in the flowable state, which is applied via the application device 53 and through one of the openings 73, which has a defined height H to the upper side 35 of the carrier or a defined height h1 with respect to the upper side of the semiconductor components 41, which may be LED chips, for example.
- the height h1 above the semiconductor components 51 is defined by the use of the boundary plate 51 for producing the layer 55 according to FIG. 11a, cf. Fig. 12a.
- the material layer thickness above the emitting component can thus be set precisely. This allows deviations in the color location distribution to be reduced.
- the limiting plate 51 is likewise also designed with a flat upper side 65.
- the underside 67 has a structuring 69, which is provided to form a complementary structure 71 on the top 75 of the layer 55, as shown in FIG. 12b.
- an optical element 77 in particular a lens, can be formed above the light-emitting region of the semiconductor components 41.
- the underside 67 of the limiting device 51 can also consist of an area with a structure 69 and of a flat area.
- a device 21 is used in which the underside 67 of the limiting plate 51 is designed in a stepped manner.
- the underside 67 therefore has at least a first region 79, which is a first distance h1 from the top of the one Semiconductor component 41, and a second region 81, which has a second distance h2 to the top of the adjacent, second semiconductor component 41 when the device 21 is arranged on the carrier surface 35.
- a material layer 55 can thus be formed in which the layer heights h1, h2 are different over the adjacent semiconductor components 41. This allows different color locations for the
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201980075178.3A CN112956039B (zh) | 2018-09-14 | 2019-09-13 | 用于在光电子的发光装置上由在可流动的状态中提供的材料来制造层的装置和方法 |
| DE112019004595.4T DE112019004595B4 (de) | 2018-09-14 | 2019-09-13 | VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHT AUS EINEM IN EINEM FLIEßFÄHIGEN ZUSTAND BEREITGESTELLTEN MATERIAL AUF EINER OPTOELEKTRONISCHEN LEUCHTVORRICHTUNG |
| US17/275,078 US12261153B2 (en) | 2018-09-14 | 2019-09-13 | Apparatus and method for forming a layer of a material provided in a flowable state on an optoelectronic light-emitting device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018122572.5A DE102018122572A1 (de) | 2018-09-14 | 2018-09-14 | VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHT AUS EINEM IN EINEM FLIEßFÄHIGEN ZUSTAND BEREITGESTELLTEN MATERIAL AUF EINER OPTOELEKTRONISCHEN LEUCHTVORRICHTUNG |
| DE102018122572.5 | 2018-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020053371A1 true WO2020053371A1 (de) | 2020-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2019/074454 Ceased WO2020053371A1 (de) | 2018-09-14 | 2019-09-13 | VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHT AUS EINEM IN EINEM FLIEßFÄHIGEN ZUSTAND BEREITGESTELLTEN MATERIAL AUF EINER OPTOELEKTRONISCHEN LEUCHTVORRICHTUNG |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12261153B2 (de) |
| CN (1) | CN112956039B (de) |
| DE (2) | DE102018122572A1 (de) |
| WO (1) | WO2020053371A1 (de) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100181582A1 (en) * | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
| US20100276716A1 (en) * | 2008-01-07 | 2010-11-04 | Sunghoon Kwon | Light emitting diode coating method |
| US20130134445A1 (en) * | 2011-11-29 | 2013-05-30 | Cree, Inc. | Complex primary optics and methods of fabrication |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050104164A1 (en) * | 2003-11-14 | 2005-05-19 | Lsi Logic Corporation | EMI shielded integrated circuit packaging apparatus method and system |
| JP2008277325A (ja) | 2007-04-25 | 2008-11-13 | Canon Inc | 半導体装置及び半導体装置の製造方法 |
| US8486724B2 (en) | 2010-10-22 | 2013-07-16 | Tsmc Solid State Lighting Ltd. | Wafer level reflector for LED packaging |
| DE102013213073A1 (de) | 2013-07-04 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelementes |
| US9640709B2 (en) | 2013-09-10 | 2017-05-02 | Heptagon Micro Optics Pte. Ltd. | Compact opto-electronic modules and fabrication methods for such modules |
| DE102015207533A1 (de) * | 2014-04-24 | 2015-10-29 | Continental Automotive Gmbh | Schirmung als Silikonvergusshalter |
| DE102015112969A1 (de) * | 2015-08-06 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
| DE102016116298A1 (de) | 2016-09-01 | 2018-03-01 | Osram Opto Semiconductors Gmbh | Anordnung mit Träger und optoelektronischem Bauelement |
| DE102017104851A1 (de) | 2017-03-08 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von zumindest einem optoelektronischen Bauelement und optoelektronisches Bauelement |
-
2018
- 2018-09-14 DE DE102018122572.5A patent/DE102018122572A1/de not_active Withdrawn
-
2019
- 2019-09-13 DE DE112019004595.4T patent/DE112019004595B4/de active Active
- 2019-09-13 US US17/275,078 patent/US12261153B2/en active Active
- 2019-09-13 WO PCT/EP2019/074454 patent/WO2020053371A1/de not_active Ceased
- 2019-09-13 CN CN201980075178.3A patent/CN112956039B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100276716A1 (en) * | 2008-01-07 | 2010-11-04 | Sunghoon Kwon | Light emitting diode coating method |
| US20100181582A1 (en) * | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
| US20130134445A1 (en) * | 2011-11-29 | 2013-05-30 | Cree, Inc. | Complex primary optics and methods of fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112019004595A5 (de) | 2021-06-24 |
| CN112956039A (zh) | 2021-06-11 |
| US12261153B2 (en) | 2025-03-25 |
| CN112956039B (zh) | 2025-04-18 |
| US20210257344A1 (en) | 2021-08-19 |
| DE102018122572A1 (de) | 2020-03-19 |
| DE112019004595B4 (de) | 2025-01-09 |
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