像素电路及用于其的驱动方法、显示装置Pixel circuit, driving method therefor, and display device
相关申请Related applications
本申请要求于2018年9月6日递交的中国专利申请No.201811039872.3的权益,在此全文引用上述中国专利申请公开的内容作为本申请的一部分。This application claims the rights and interests of Chinese Patent Application No. 201811039872.3, filed on September 6, 2018, and the contents of the above-mentioned Chinese patent application disclosure are incorporated herein by reference in its entirety as part of this application.
技术领域Technical field
本公开涉及显示技术领域,尤其涉及一种像素电路及用于其的驱动方法、显示装置。The present disclosure relates to the field of display technology, and in particular, to a pixel circuit, a driving method therefor, and a display device.
背景技术Background technique
有机发光晶体管(Organic Light Emitting Transistor,简称OLET)同时具备有机场效应晶体管(Organic Field-effect Transistor,简称OFET)的电路调制功能,以及有机发光二极管(Organic Light-Emitting Diode,简称OLED)的发光功能。从理论上讲,OLET能够具有比OLED更高的载流子迁移率,以及更好的发光效率和发光强度,其在平板显示、光通讯、固体照明以及电泵浦有机激光器等领域将存在着巨大的应用价值。Organic Light Emitting Transistor (OLET) also has the circuit modulation function of the Organic Field-effect Transistor (OFET) and the light emitting function of Organic Light-Emitting Diode (OLED). . In theory, OLET can have higher carrier mobility than OLED, and better luminous efficiency and luminous intensity. It will exist in the fields of flat panel display, optical communication, solid-state lighting, and electric pumped organic lasers. Great application value.
发明内容Summary of the Invention
按照本公开实施例的第一方面,提供了一种像素电路。该像素电路包括输入子电路、发光控制子电路以及有机发光晶体管。所述输入子电路与栅线、数据线以及所述发光控制子电路连接,用于在所述栅线所提供的栅极扫描信号的控制下,将所述数据线所提供的数据信号写入所述发光控制子电路。所述发光控制子电路与所述有机发光晶体管的控制极连接,用于根据所写入的数据信号控制所述有机发光晶体管的控制极电压以驱动所述有机发光晶体管发光。According to a first aspect of an embodiment of the present disclosure, a pixel circuit is provided. The pixel circuit includes an input sub-circuit, a light-emitting control sub-circuit, and an organic light-emitting transistor. The input sub-circuit is connected to a gate line, a data line, and the light emission control sub-circuit, and is configured to write a data signal provided by the data line under the control of a gate scan signal provided by the gate line. The light emission control sub-circuit. The light emission control sub-circuit is connected to a control electrode of the organic light emitting transistor, and is configured to control a voltage of the control electrode of the organic light emitting transistor according to the written data signal to drive the organic light emitting transistor to emit light.
可选地,所述有机发光晶体管的第一极与第二电压端连接,用于在对应所述数据信号和所述第二电压端所提供的第二电压信号的驱动电流的驱动下发光。Optionally, the first electrode of the organic light emitting transistor is connected to a second voltage terminal, and is configured to emit light under the driving of a driving current corresponding to the data signal and a second voltage signal provided by the second voltage terminal.
可选地,所述像素电路还包括发光截止子电路。所述发光截止子 电路与脉宽调制信号线和所述有机发光晶体管的控制极连接,用于根据所述脉宽调制信号线所提供的脉宽调制信号控制所述有机发光晶体管停止发光。所述脉宽调制信号的占空比是根据所述像素电路所要显示的灰阶来确定。Optionally, the pixel circuit further includes a light-emitting cut-off sub-circuit. The light emitting cut-off circuit is connected to a pulse width modulation signal line and a control electrode of the organic light emitting transistor, and is configured to control the organic light emitting transistor to stop emitting light according to a pulse width modulation signal provided by the pulse width modulation signal line. The duty cycle of the pulse width modulation signal is determined according to the gray scale to be displayed by the pixel circuit.
可选地,所述数据信号的电压为所述有机发光晶体管的发光强度最大时的控制极电压。Optionally, the voltage of the data signal is a gate voltage when the light emitting intensity of the organic light emitting transistor is maximum.
可选地,所述发光截止子电路包括第一晶体管。所述第一晶体管的控制极与所述脉宽调制信号线连接,所述第一晶体管的第一极与第三电压端连接,所述第一晶体管的第二极与所述有机发光晶体管的控制极连接。所述第一晶体管被配置为当所述脉宽调制信号处于有效电平时导通,以通过向所述有机发光晶体管的控制极施加第三电压端所提供的第三电压信号而控制所述有机发光晶体管停止发光。Optionally, the light-emitting cut-off sub-circuit includes a first transistor. The control electrode of the first transistor is connected to the PWM signal line, the first electrode of the first transistor is connected to a third voltage terminal, and the second electrode of the first transistor is connected to the organic light emitting transistor. Control pole connection. The first transistor is configured to be turned on when the pulse width modulation signal is at an active level to control the organic by applying a third voltage signal provided by a third voltage terminal to a control electrode of the organic light emitting transistor. The light emitting transistor stops emitting light.
可选地,所述第一电压端与所述第二电压端连接。Optionally, the first voltage terminal is connected to the second voltage terminal.
可选地,所述有机发光晶体管为双极型有机发光晶体管。所述第二电压端配置为提供交流电压信号作为所述第二电压信号。Optionally, the organic light emitting transistor is a bipolar organic light emitting transistor. The second voltage terminal is configured to provide an AC voltage signal as the second voltage signal.
可选地,所述第二电压端配置为在每连续的两帧中,按帧周期交替地提供一次正极性电压信号和一次负极性电压信号。Optionally, the second voltage terminal is configured to alternately provide a positive-polarity voltage signal and a negative-polarity voltage signal once every two consecutive frames in a frame period.
可选地,所述输入子电路包括第二晶体管。所述第二晶体管的控制极与所述栅线连接,所述第二晶体管的第一极与所述数据线连接,所述第二晶体管的第二极与所述发光控制子电路连接。Optionally, the input sub-circuit includes a second transistor. A control electrode of the second transistor is connected to the gate line, a first electrode of the second transistor is connected to the data line, and a second electrode of the second transistor is connected to the light emission control sub-circuit.
可选地,所述发光控制子电路包括存储电容。所述存储电容的第一极与所述第一电压端连接,所述存储电容的第二极与所述有机发光晶体管的控制极及所述输入子电路的输出端连接。Optionally, the light emission control sub-circuit includes a storage capacitor. A first pole of the storage capacitor is connected to the first voltage terminal, and a second pole of the storage capacitor is connected to a control electrode of the organic light emitting transistor and an output terminal of the input sub-circuit.
可选地,所述第二电压端包括电源电压端。所述有机发光晶体管的第二极连接公共电压端。Optionally, the second voltage terminal includes a power voltage terminal. The second electrode of the organic light emitting transistor is connected to a common voltage terminal.
按照本公开实施例的第二方面,提供了一种用于像素电路的驱动方法。所述像素电路包括输入子电路、发光控制子电路以及有机发光晶体管。所述驱动方法包括:在用于待显示帧的一帧时间期间:在数据写入阶段,由输入子电路在栅线所提供的栅极扫描信号的控制下,将数据线所提供的数据信号写入发光控制子电路;以及在发光阶段,由发光控制子电路根据所写入的数据信号驱动所述有机发光场效应管发光。According to a second aspect of the embodiments of the present disclosure, a driving method for a pixel circuit is provided. The pixel circuit includes an input sub-circuit, a light-emitting control sub-circuit, and an organic light-emitting transistor. The driving method includes: during a frame time for a frame to be displayed: during the data writing phase, the input sub-circuit controls the data signal provided by the data line under the control of the gate scan signal provided by the gate line Write the light-emitting control sub-circuit; and in the light-emitting phase, the light-emitting control sub-circuit drives the organic light-emitting field-effect tube to emit light according to the written data signal.
可选地,所述将数据线所提供的数据信号写入发光控制子电路包括:通过向所述发光控制子电路提供第一电压信号而在所述有机发光晶体管的控制极保持与所述数据信号对应的控制极电压。所述由发光控制子电路根据所写入的数据信号控制所述有机发光晶体管的发光包括:向所述有机发光晶体管的第一极提供第二电压信号,以及通过对应所述数据信号和所述第二电压信号的驱动电流来驱动所述有机发光晶体管发光。Optionally, writing the data signal provided by the data line into the light-emitting control sub-circuit includes: holding the data signal at the control electrode of the organic light-emitting transistor by supplying a first voltage signal to the light-emitting control sub-circuit. Control voltage corresponding to the signal. The controlling the light emitting of the organic light emitting transistor by the light emitting control sub-circuit according to the written data signal includes: providing a second voltage signal to a first pole of the organic light emitting transistor, and by corresponding to the data signal and the data signal. A driving current of a second voltage signal drives the organic light emitting transistor to emit light.
可选地,所述数据信号的电压是根据所述像素电路所要显示的灰阶来确定的。Optionally, the voltage of the data signal is determined according to a gray scale to be displayed by the pixel circuit.
可选地,所述一帧时间还包括发光截止阶段。所述驱动方法还包括:在所述发光截止阶段,通过向所述有机发光晶体管的控制极施加第三电压信号来控制所述有机发光晶体管停止发光。所述发光阶段的时长根据待显示帧的像素或者子像素的灰阶来确定。Optionally, the one-frame time further includes a light-off cut-off phase. The driving method further includes controlling the organic light emitting transistor to stop emitting light by applying a third voltage signal to a control electrode of the organic light emitting transistor in the light emission off stage. The duration of the light-emitting phase is determined according to the gray scale of the pixels or sub-pixels of the frame to be displayed.
可选地,所述数据信号的电压为所述有机发光晶体管的发光强度最大时所对应的控制极电压。Optionally, the voltage of the data signal is a control electrode voltage corresponding to when the light emitting intensity of the organic light emitting transistor is maximum.
可选地,所述有机发光晶体管为双极型有机发光晶体管,且所述第二电压信号为交流电压信号。Optionally, the organic light emitting transistor is a bipolar organic light emitting transistor, and the second voltage signal is an alternating voltage signal.
可选地,在每连续的两帧时间中,按帧周期向所述有机发光晶体管的第一极交替地施加正极性电压信号和负极性电压信号。Optionally, a positive polarity voltage signal and a negative polarity voltage signal are alternately applied to the first pole of the organic light emitting transistor in a frame period in every two consecutive frame times.
按照本公开实施例的第三方面,提供了一种显示装置。该显示装置包括如上所述的像素电路。According to a third aspect of the embodiments of the present disclosure, a display device is provided. The display device includes a pixel circuit as described above.
按照本公开实施例的第四方面,提供了一种信号处理器。该信号处理器应用于一种如上所述的、其中包含发光截止子电路的像素电路。所述信号处理器被配置为根据所述像素电路所要显示的灰阶,计算脉宽调制信号的占空比,生成相应的脉宽调制信号,并输出给所述像素电路中的发光截止子电路。According to a fourth aspect of the embodiments of the present disclosure, a signal processor is provided. The signal processor is applied to a pixel circuit including a light-emitting cut-off sub-circuit as described above. The signal processor is configured to calculate a duty cycle of a pulse width modulation signal according to a gray level to be displayed by the pixel circuit, generate a corresponding pulse width modulation signal, and output the corresponding pulse width modulation signal to a light-emitting cut-off sub-circuit in the pixel circuit. .
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
当参照附图对具体实施例进行详细描述后,本公开的上述和其它特征及优点将变得更加明显。在附图中:The above and other features and advantages of the present disclosure will become more apparent when specific embodiments are described in detail with reference to the drawings. In the drawings:
图1为OLET的结构示意图;FIG. 1 is a schematic structural diagram of OLET;
图2为OLET在不同电压下的工作状态图;Figure 2 is a working state diagram of OLET under different voltages;
图3为OLET中载流子的转移特性图;3 is a characteristic diagram of carrier transfer in OLET;
图4为OLET中载流子的输出特性图;FIG. 4 is an output characteristic diagram of carriers in OLET;
图5为图2所示OLET在状态②时的载流子传输示意图;FIG. 5 is a schematic diagram of carrier transfer in the state ② of OLET shown in FIG. 2; FIG.
图6为图2所示OLET在状态⑤时的载流子传输示意图;FIG. 6 is a schematic diagram of carrier transfer in the state ⑤ of the OLET shown in FIG. 2; FIG.
图7为本公开实施例提供的一种像素电路的结构示意图;7 is a schematic structural diagram of a pixel circuit according to an embodiment of the present disclosure;
图8为图7所示像素电路的时序控制图;8 is a timing control diagram of the pixel circuit shown in FIG. 7;
图9为本公开实施例提供的另一种像素电路的结构示意图;9 is a schematic structural diagram of another pixel circuit according to an embodiment of the present disclosure;
图10为图9所示像素电路的时序控制图;10 is a timing control diagram of the pixel circuit shown in FIG. 9;
图11为本公开实施例提供的又一种像素电路的结构示意图;11 is a schematic structural diagram of still another pixel circuit according to an embodiment of the present disclosure;
图12为图11所示像素电路的时序控制图。FIG. 12 is a timing control diagram of the pixel circuit shown in FIG. 11.
具体实施方式detailed description
为便于理解,下面结合说明书附图,对本公开实施例提供的像素电路及驱动方法、显示装置进行详细描述。In order to facilitate understanding, the pixel circuit, the driving method, and the display device provided by the embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
有机发光晶体管同时具备有机场效应晶体管的电路调制功能和有机发光二极管的发光功能。OLET作为一种异质结双极型器件,其典型的结构之一在图1中示出。如图1所示,OLET 1包括沿出光方向依次层叠设置的栅极10、电子传输层14、空穴传输层15以及分别设在空穴传输层15表面的源极16和漏极17。栅极10一般可由依次层叠设置的铝导电层11、N型硅导电层12和二氧化硅层13构成。The organic light emitting transistor has both a circuit modulation function of an airport effect transistor and a light emitting function of an organic light emitting diode. OLET is a heterojunction bipolar device, and one of its typical structures is shown in FIG. 1. As shown in FIG. 1, OLET 1 includes a gate electrode 10, an electron transport layer 14, a hole transport layer 15, and a source electrode 16 and a drain electrode 17 provided on the surface of the hole transport layer 15, which are sequentially stacked in the light emitting direction. The gate electrode 10 is generally composed of an aluminum conductive layer 11, an N-type silicon conductive layer 12, and a silicon dioxide layer 13 which are sequentially stacked.
图2示出了OLET在不同电压下的工作状态图。以图1中的OLET1为例,它通过其栅极10与源极16之间的偏压V
GS、以及源极16和漏极17之间的横向电场V
DS,可以调整载流子即电子和空穴的注入势垒,并相应控制电子和空穴的注入量,以便注入电子传输层14和空穴传输层15中的载流子可以在横向电场V
DS的作用下形成沟道电流。根据OLET中偏压V
GS和横向电场V
DS施加的不同,OLET通常可工作于如图2所示的六个状态①-⑥,其中V
TH为使得OLET导通的阈值电压。
Figure 2 shows the working state diagram of OLET under different voltages. Taking OLET1 in FIG. 1 as an example, it can adjust carriers or electrons through the bias voltage V GS between its gate 10 and source 16 and the lateral electric field V DS between source 16 and drain 17. And hole injection barriers, and correspondingly control the injection amount of electrons and holes, so that carriers injected into the electron transport layer 14 and the hole transport layer 15 can form a channel current under the action of the lateral electric field V DS . According to the application of the bias voltage V GS and the lateral electric field V DS in OLET, OLET can usually work in the six states ①-⑥ as shown in FIG. 2, where V TH is the threshold voltage that makes OLET on.
状态①,当V
GS-V
TH>0时,电子可克服注入势垒从源极16注入;而V
DS<V
GS-V
TH,空穴无法克服注入势垒从漏极17注入。这样注入的电子在横向电场V
DS的作用下向漏极17运动并被漏极17收集,OLET处于电子传输状态,OLET的沟道电流主要表现为电子电流。
State ①, when V GS -V TH > 0, electrons can be injected from the source 16 overcoming the injection barrier; while V DS <V GS -V TH , holes cannot be injected from the drain 17 overcoming the injection barrier. The electrons thus injected move toward the drain electrode 17 under the action of the lateral electric field V DS and are collected by the drain electrode 17. OLET is in an electron-transporting state, and the channel current of OLET mainly manifests as an electron current.
状态②,随着V
DS向正极性的增大,空穴的注入势垒逐渐减小。 当空穴克服注入势垒从漏极17注入后,空穴也能在横向电场V
DS的作用下向源极16运动并被源极16收集。这样OLET处于电子和空穴同时传输的状态,OLET的沟道电流主要表现为电子电流和空穴电流之和。
State ②, as V DS increases to positive polarity, the hole injection barrier gradually decreases. After the holes are injected from the drain electrode 17 against the injection barrier, the holes can also move toward the source electrode 16 under the action of the lateral electric field V DS and be collected by the source electrode 16. In this way, OLET is in a state in which electrons and holes are transported simultaneously, and the channel current of OLET is mainly expressed as the sum of the electron current and the hole current.
状态③,当V
GS-V
TH<0,且V
DS>0时,电子无法克服注入势垒从源极16注入,而空穴可克服注入势垒从漏极17注入。这样注入的空穴在横向电场V
DS的作用下向源极16运动并被源极16收集,OLET处于空穴传输状态,OLET的沟道电流主要表现为空穴电流。
State ③, when V GS -V TH < 0 and V DS > 0, electrons cannot be injected from the source 16 against the injection barrier, and holes can be injected from the drain 17 against the injection barrier. The injected hole moves to the source 16 under the action of the lateral electric field V DS and is collected by the source 16. OLET is in a hole-transporting state, and the channel current of OLET is mainly a hole current.
状态④,随着V
DS向负极性的增大,漏极17处空穴的注入势垒逐渐增大,空穴克服注入势垒从漏极17注入的数量逐渐减少。当V
DS<0后,源极16和漏极17之间的横向电场V
DS呈反向变化,空穴将从源极16注入并被漏极17收集。这样OLET仍处于空穴传输的状态,OLET的沟道电流主要表现为空穴电流。
State ④, as V DS increases to the negative polarity, the injection barrier of holes at the drain 17 gradually increases, and the number of holes injected from the drain 17 to overcome the injection barrier gradually decreases. When V DS <0, the lateral electric field V DS between the source 16 and the drain 17 changes in the opposite direction, and holes will be injected from the source 16 and collected by the drain 17. In this way, OLET is still in the state of hole transport, and the channel current of OLET mainly manifests as hole current.
状态⑤,当V
DS向负极性进一步增大至其绝对值大于(V
GS-V
TH)后,电子可克服注入势垒从漏极17注入,电子也能在横向电场V
DS的作用下向源极16运动并被源极16收集。这样OLET处于电子和空穴同时传输的状态,OLET的沟道电流主要表现为电子电流和空穴电流之和。
State ⑤, when V DS is further increased to a negative polarity to an absolute value greater than (V GS -V TH ), electrons can be injected from the drain 17 overcoming the injection barrier, and the electrons can also be directed by the lateral electric field V DS The source electrode 16 moves and is collected by the source electrode 16. In this way, OLET is in a state in which electrons and holes are transported simultaneously, and the channel current of OLET is mainly expressed as the sum of the electron current and the hole current.
状态⑥,当V
GS-V
TH>0,且V
DS<0时,仅电子能够克服注入势垒从漏极17注入并被源极16收集。这样OLET处于电子传输状态,OLET的沟道电流主要表现为电子电流。
State ⑥, when V GS -V TH > 0 and V DS <0, only electrons can be injected from the drain 17 and collected by the source 16 over the injection barrier. In this way, OLET is in the state of electron transmission, and the channel current of OLET mainly manifests as electron current.
图3示出了双极型OLET中载流子的转移特性,且图4示出了双极型OLET中载流子的输出特性。从图3和图4中可以看出,随着OLET偏压V
GS和横向电场V
DS的变化,OLET中载流子的注入势垒也在相应变化。因此,OLET中电子和空穴的注入会不断变化,并不会出现电子或空穴被完全阻止的状态。也就说OLET的沟道电流总是会表现为电子电流和空穴电流之和,只是其电子电流和空穴电流会呈现出相对的大小变化,即在某一状态可能以电子电流或空穴电流为主要电流。
FIG. 3 shows the transfer characteristics of the carriers in the bipolar OLET, and FIG. 4 shows the output characteristics of the carriers in the bipolar OLET. It can be seen from FIG. 3 and FIG. 4 that as the OLET bias voltage V GS and the lateral electric field V DS change, the carrier injection barrier in OLET also changes accordingly. Therefore, the injection of electrons and holes in OLET will constantly change, and there will be no state where electrons or holes are completely blocked. That is to say, the channel current of OLET will always appear as the sum of the electron current and the hole current, but the electron current and the hole current will show a relative change in size, that is, the electron current or the hole may The current is the main current.
相关技术针对上述OLET的各工作状态给出了其不同沟道电流的计算公式,具体可参阅“Electron and Ambipolar Transport in Organic Field-Effect Transistors,Chemical Reviews,2007,107(4):1296-1323.”。在这些相关技术中,假设OLET中载流子的迁移率依赖于栅极电压,且按照OLET中偏压V
GS和横向电场V
DS施加的不同,可以将上述 OLET的六个工作状态分别划分为:单极线性区、单极饱和区和双极区。单极线性区是指沟道电流主要为电子电流或空穴电流,且沟道电流呈线性变化的区域。单极饱和区是指沟道电流主要为电子电流或空穴电流,且沟道电流呈饱和状态的区域。双极区是指同时存在电子电流和空穴电流的区域。
Relevant technologies have given different channel current calculation formulas for each of the above-mentioned working states of OLET. For details, please refer to "Electron and Ambipolar Transport in Organic Field-Effect Transistors, Chemical Reviews, 2007, 107 (4): 1296-1323. ". In these related technologies, it is assumed that the carrier mobility in OLET depends on the gate voltage, and according to the application of bias V GS and lateral electric field V DS in OLET, the six working states of OLET can be divided into : Unipolar linear region, unipolar saturation region, and bipolar region. The unipolar linear region refers to a region where the channel current is mainly an electron current or a hole current, and the channel current changes linearly. The unipolar saturation region refers to a region where the channel current is mainly an electron current or a hole current, and the channel current is in a saturated state. A bipolar region refers to a region in which an electron current and a hole current coexist.
由于OLET通常采用异质结双极型结构,所以其正常发光需要工作在双极区,即图2所示的状态②和状态⑤,也就是同时存在电子电流和空穴电流的区域。Since OLET usually adopts a heterojunction bipolar structure, its normal light emission needs to work in the bipolar region, that is, the state ② and the state ⑤ shown in FIG. 2, that is, a region in which an electron current and a hole current coexist.
图5和图6示出了当OLET的源极和漏极对称时,源极和漏极接交流电后的载流子输运路径。状态②所示OLET的载流子传输路径如图5所示,状态⑤所示OLET的载流子传输路径如图6所示。假设OLET的空穴注入势垒电压V
TH-h<电子注入势垒电压V
Th-e,那么当V
GS>V
Th-e且,(V
GS-V
TH-h)≤V
DS≤(V
GS-V
TH-e);或者,|V
GS|>|V
Th-e|且(V
GS-V
TH-h)≤V
DS≤(V
GS-V
TH-e)时,OLET的沟道电流I
DS包含电子电流I
DS-e和空穴电流I
DS-h两部分,即:
Figures 5 and 6 show the carrier transport path after the source and drain are connected to AC when the source and drain of OLET are symmetrical. The carrier transmission path of OLET shown in state ② is shown in FIG. 5, and the carrier transmission path of OLET shown in state ⑤ is shown in FIG. 6. Assuming that the hole injection barrier voltage V TH-h of the OLET is less than the electron injection barrier voltage V Th-e , then when V GS > V Th-e and (V GS -V TH-h ) ≤V DS ≤ (V GS -V TH-e ); or | V GS | > | V Th-e | and (V GS -V TH-h ) ≤V DS ≤ (V GS -V TH-e ), the channel of OLET The current I DS includes two parts: an electron current I DS-e and a hole current I DS-h , namely:
电子电流|I
DS-e|=WC
i/(2L)[μ
e(V
GS-V
TH-e)
2] (1);
Electron current | I DS-e | = WC i / (2L) [μ e (V GS -V TH-e ) 2 ] (1);
空穴电流|I
DS-h|=WC
i/(2L)[μ
h(V
DS-(V
GS-V
TH-h))
2] (2);
Hole current | I DS-h | = WC i / (2L) [μ h (V DS- (V GS -V TH-h )) 2 ] (2);
沟道电流|I
DS|=WC
i/(2L)[μ
e(V
GS-V
TH-e)
2+μ
h(V
DS-(V
GS-V
TH-h))
2] (3);
Channel current | I DS | = WC i / (2L) [μ e (V GS -V TH-e ) 2 + μ h (V DS- (V GS -V TH-h )) 2 ] (3);
其中,W为OLET的沟道宽度,C
i为OLET的单位栅电容,L为OLET的沟道长度,μ
e为OLET的电子迁移率,μ
h为OLET的空穴迁移率。
Among them, W is the channel width of OLET, C i is the unit gate capacitance of OLET, L is the channel length of OLET, μ e is the electron mobility of OLET, and μ h is the hole mobility of OLET.
图7示出了按照本公开实施例提供的像素电路。该像素电路包括输入子电路21、发光控制子电路22以及OLET 1。输入子电路21与栅线Gate、数据线Data以及发光控制子电路22连接,用于在栅线Gate所提供的栅极扫描信号V
Gate的控制下,将数据线Data所提供的数据信号V
Data写入发光控制子电路22。发光控制子电路22与OLET 1的控制极连接,用于根据所写入的数据信号控制所述有机发光晶体管的控制极电压以驱动所述有机发光晶体管发光。
FIG. 7 illustrates a pixel circuit provided according to an embodiment of the present disclosure. The pixel circuit includes an input sub-circuit 21, a light emission control sub-circuit 22, and OLET 1. The input sub-circuit 21 is connected to the gate line Gate, the data line Data, and the light emission control sub-circuit 22, and is used for controlling the data signal V Data provided by the data line Data under the control of the gate scan signal V Gate provided by the gate line Gate. Write the light emission control sub-circuit 22. The light emission control sub-circuit 22 is connected to the control electrode of OLET 1 and is used to control the voltage of the control electrode of the organic light emitting transistor to drive the organic light emitting transistor to emit light according to the written data signal.
在一些实施例中,发光控制子电路22具有与第一电压端连接的第一端,和与输入子电路21的输出端以及OLET 1的控制极连接的第二端,用于通过第一电压端所提供的第一电压信号在所述有机发光晶体管的控制极保持与所述数据信号对应的控制极电压。示例性地,发光 控制子电路22被配置为在栅极扫描信号选址该像素电路时在其第二端接收输入子电路21输出的数据信号,以及在栅极扫描信号未选址该像素电路时,将数据信号保持在OLET 1的控制极,以提供与该数据信号对应的控制极电压。OLET 1的第一极与第二电压端连接,用于在对应所述数据信号和所述第二电压端所提供的第二电压信号的驱动电流的驱动下发光。可以理解,OLET 1的驱动电流的大小取决于其控制极的控制极电压和第一极的第二电压端所提供的第二电压。OLET 1的发光强度可随驱动电流而变。在一些实施例中,所述数据信号的电压是根据所述像素电路所要显示的灰阶来确定的。可以理解,像素电路所要显示的灰阶是基于待显示图像帧中与该像素电路对应的图像像素(包括子像素)的灰阶来确定的。In some embodiments, the light emission control sub-circuit 22 has a first terminal connected to the first voltage terminal, and a second terminal connected to the output terminal of the input sub-circuit 21 and the control electrode of OLET1 for passing the first voltage. The first voltage signal provided by the terminal maintains a gate voltage corresponding to the data signal at the gate of the organic light emitting transistor. Exemplarily, the light emission control sub-circuit 22 is configured to receive a data signal output from the input sub-circuit 21 at a second end of the pixel circuit when the pixel is scanned by the gate scan signal, and the pixel circuit is not selected when the gate scan signal is located At this time, the data signal is held at the gate of OLET1 to provide a gate voltage corresponding to the data signal. The first pole of OLET1 is connected to a second voltage terminal, and is configured to emit light under the driving of a driving current corresponding to the data signal and a second voltage signal provided by the second voltage terminal. It can be understood that the magnitude of the driving current of OLET1 depends on the control electrode voltage of its control electrode and the second voltage provided by the second voltage terminal of the first electrode. The light emission intensity of OLET1 can vary with the driving current. In some embodiments, the voltage of the data signal is determined according to a gray scale to be displayed by the pixel circuit. It can be understood that the gray scale to be displayed by the pixel circuit is determined based on the gray scale of an image pixel (including a sub-pixel) corresponding to the pixel circuit in an image frame to be displayed.
OLET 1的控制极通常是指OLET 1的栅极。OLET 1还包括与第一极对应设置的第二极。其第一极为源极时,第二极为漏极。其第一极为漏极时,第二极为源极。在本实施例中,OLET 1的第一极与第二电压端连接。第二电压端可选用电源电压端,用于提供电源电压信号V
DD作为第二电压信号。OLET 1的第二极可与公共电压端连接。公共电压端用于提供公共电压信号Vss。当发光控制子电路22根据数据信号控制OLET 1发光时,OLET 1可以在数据信号V
Data以及电源电压信号V
DD的驱动下发光。一般地,Vss的电位小于V
DD的电位。示例性地,Vss可以为低电平,而V
DD为高电平。
The gate of OLET 1 usually refers to the gate of OLET 1. OLET 1 further includes a second pole disposed corresponding to the first pole. When the first pole is the source, the second pole is the drain. When its first pole is drain, its second pole is source. In this embodiment, the first pole of OLET 1 is connected to the second voltage terminal. The second voltage terminal may be a power voltage terminal, which is used to provide a power voltage signal V DD as a second voltage signal. The second pole of OLET 1 can be connected to a common voltage terminal. The common voltage terminal is used to provide a common voltage signal Vss. When the light emission control sub-circuit 22 controls the light emission of OLET 1 according to the data signal, OLET 1 can emit light under the driving of the data signal V Data and the power supply voltage signal V DD . Generally, the potential of Vss is smaller than the potential of V DD . For example, Vss may be low and V DD is high.
可选的,上述输入子电路21包括第二晶体管T
2。第二晶体管T
2的控制极与栅线Gate连接,第二晶体管T
2的第一极与数据线Data连接,第二晶体管T
2的第二极例如作为其输出端与发光控制子电路22连接。第二晶体管T2被配置为在栅极扫描信号选址该像素电路时,也即该栅极扫描信号处于有效电平时导通,以便向发光控制子电路22输出数据信号V
Data。第二晶体管T2还被配置为在栅极扫描信号未选址该像素电路时,也即该栅极扫描信号处于无效电平时截止。第二晶体管T2可以为N型或P型晶体管。示例性的,第二晶体管T
2可以选用P型晶体管。
Optionally, the input sub-circuit 21 includes a second transistor T 2 . The control electrode of the second transistor T 2 is connected to the gate line Gate, the first electrode of the second transistor T 2 is connected to the data line Data, and the second electrode of the second transistor T 2 is connected to the light-emitting control sub-circuit 22 as its output terminal, for example. . The second transistor T2 is configured to be turned on when a gate scan signal is addressed to the pixel circuit, that is, when the gate scan signal is at an active level, so as to output a data signal V Data to the light emission control sub-circuit 22. The second transistor T2 is also configured to be turned off when the gate scan signal is not addressed to the pixel circuit, that is, when the gate scan signal is at an inactive level. The second transistor T2 may be an N-type or a P-type transistor. Exemplarily, the second transistor T 2 may be a P-type transistor.
可选的,上述发光控制子电路22包括存储电容C。存储电容C的第一极与第一电压端连接,存储电容C的第二极与OLET 1的控制极及输入子电路21的输出端连接。存储电容C被配置为在栅极扫描信号 选址该像素电路时在其第二极接收数据信号且通过所述第一电压端输入的第一电压信号进行充电,以便在栅极扫描信号未选址该像素电路时将所述数据信号保持在OLET 1的控制极上。Optionally, the light emission control sub-circuit 22 includes a storage capacitor C. The first pole of the storage capacitor C is connected to the first voltage terminal, and the second pole of the storage capacitor C is connected to the control electrode of OLET1 and the output terminal of the input sub-circuit 21. The storage capacitor C is configured to receive a data signal at a second pole of the pixel circuit when the gate scan signal is addressed to the pixel circuit and charge the first voltage signal input through the first voltage terminal, so that when the gate scan signal is not selected, When the pixel circuit is accessed, the data signal is kept on the control electrode of OLET1.
在一些实施例中,第一电压端可以与第二电压端连接,即第一电压端与第二电压端可配置为提供相同的电压信号,比如图7所示的电源电压信号V
DD。或者,第一电压端与第二电压端可以配置为提供不同的电压信号。比如第一电压端可配置为提供公共电压信号Vss,第二电压端可配置为提供电源电压信号V
DD。第一电压端与第二电压端提供的电压信号可以根据实际需要自行设定,而不限于此。
In some embodiments, the first voltage terminal may be connected to the second voltage terminal, that is, the first voltage terminal and the second voltage terminal may be configured to provide the same voltage signal, such as the power supply voltage signal V DD shown in FIG. 7. Alternatively, the first voltage terminal and the second voltage terminal may be configured to provide different voltage signals. For example, the first voltage terminal may be configured to provide a common voltage signal Vss, and the second voltage terminal may be configured to provide a power voltage signal V DD . The voltage signals provided by the first voltage terminal and the second voltage terminal can be set according to actual needs, but are not limited thereto.
本公开实施例根据OLET的发光原理,提供了一种像素电路,以便在将OLET应用于显示装置时,对OLET进行有源驱动。该像素电路可以利用输入子电路21在选址OLET 1时,即在栅线Gate所提供的栅极扫描信号V
Gate的控制下,将数据线Data所提供的数据信号V
Data写入发光控制子电路22。然后,由发光控制子电路22根据所写入的数据信号V
Data控制OLET 1发光。在一个示例中,发光控制子电路22根据所写入的数据信号V
Data将OLET 1的控制极的电压保持在导通电压,也即使得OLET 1导通的电压。举例而言,可以将所写入的数据信号V
Data的电压设置为与该导通电压等值。这样OLET 1便可在该数据信号V
Data以及第二电压端所提供的第二电压信号的驱动下于其第一极和第二极之间形成导通电流(也即驱动电流),从而进行发光显示。OLET 1的发光时长依赖于发光控制子电路22将OLET 1的控制极的电压保持在导通电压的时长。
The embodiments of the present disclosure provide a pixel circuit based on the light emitting principle of OLET, so that when OLET is applied to a display device, OLET is actively driven. The pixel circuit can use the input sub-circuit 21 to write the data signal V Data provided by the data line Data to the light-emitting control sub-unit under the control of the gate scan signal V Gate provided by the gate line Gate when the address OLET 1 is selected. Circuit 22. Then, the light emission control sub-circuit 22 controls the light emission of OLET 1 based on the written data signal V Data . In one example, the light emission control sub-circuit 22 maintains the voltage of the control electrode of OLET 1 at the on-voltage according to the written data signal V Data, that is, the voltage that makes OLET 1 conductive. For example, the voltage of the written data signal V Data can be set to be equal to the on-voltage. In this way, OLET 1 can drive the data signal V Data and the second voltage signal provided by the second voltage terminal to form a conducting current (ie, a driving current) between the first pole and the second pole of the data signal. Illuminated display. The light-emission time of OLET 1 depends on the time that the light-emission control sub-circuit 22 maintains the voltage of the control electrode of OLET 1 at the on-voltage.
需要说明的是,结合上述OLET中沟道电流的计算公式可知,OLET的发光强度通常依赖于其电子电流和空穴电流的复合电流,即OLET的发光强度L与最小的电子电流|I
DS-e|或空穴电流|I
DS-h|相关。返回图4,从图中可以看出,以V
DS>0的区间为例,若V
DS保持定值不变,则当OLET的栅极电压V
g(例如V
Data)在双极区内由小变大时,电子电流I
DS-e将逐渐增大,空穴电流I
DS-h逐渐减小。由此,如果想获得OLET 1的最大发光强度,则需控制OLET的电子电流|I
DS-e|等于其空穴电流|I
DS-h|,即:
It should be noted that combined with the above formula for calculating the channel current in OLET, it can be known that the luminous intensity of OLET usually depends on the combined current of its electron current and hole current, that is, the luminous intensity L of OLET and the minimum electron current | I DS- e | or hole current | I DS-h | Returning to FIG. 4, it can be seen from the figure that the interval of V DS > 0 is taken as an example. If V DS remains constant, when the gate voltage V g (eg, V Data ) of OLET is in the bipolar region, When it becomes small, the electron current I DS-e will gradually increase, and the hole current I DS-h will gradually decrease. Therefore, if you want to obtain the maximum luminous intensity of OLET 1, you need to control the electron current | I DS-e | of OLET equal to its hole current | I DS-h |, that is:
WC
i/(2L)[μ
e(V
GS-V
TH-e)
2]=WC
i/(2L)[μ
h(V
DS-(V
GS-V
TH-h))
2] (4)。
WC i / (2L) [μ e (V GS -V TH-e ) 2 ] = WC i / (2L) [μ h (V DS- (V GS -V TH-h )) 2 ] (4).
以图7所示的像素电路为例,OLET 1的第一极与第二电压端连接,第二电压端为电源电压端,用于提供电源电压信号V
DD。OLET 1的第二极连接公共电压端,公共电压端用于提供公共电压信号V
SS。假设公共电压端接地,即OLET 1的第二极的电压为0V时,通过对等式(4)进行计算可以确定:
Taking the pixel circuit shown in FIG. 7 as an example, the first pole of OLET 1 is connected to a second voltage terminal, and the second voltage terminal is a power voltage terminal for providing a power voltage signal V DD . The second pole of OLET 1 is connected to a common voltage terminal, and the common voltage terminal is used to provide a common voltage signal V SS . Assuming that the common voltage terminal is grounded, that is, when the voltage of the second pole of OLET 1 is 0V, it can be determined by calculating equation (4):
其中,Vgm为OLET 1的发光强度最大时所对应的控制极驱动电压,其可通过数据线Data传送的数据信号V
Data提供;Vs为OLET 1的第一极的电压,其可通过电源电压信号V
DD提供;V
TH-e为OLET 1的电子注入势垒电压,V
TH-h为OLET 1的空穴注入势垒电压,μ
e为OLET 1的电子迁移率,μ
h为OLET 1的空穴迁移率。
Among them, Vgm is the control electrode driving voltage corresponding to the maximum luminous intensity of OLET 1, which can be provided by the data signal V Data transmitted by the data line Data; Vs is the voltage of the first pole of OLET 1, which can be transmitted by the power supply voltage signal. Provided by V DD ; V TH-e is the electron injection barrier voltage of OLET 1, V TH-h is the hole injection barrier voltage of OLET 1, μ e is the electron mobility of OLET 1, and μ h is the vacancy of OLET 1. Acuity mobility.
因此,当数据线Data所提供的数据信号V
Data∈(0,Vgm)时,发光控制子电路22根据所写入的数据信号V
Data控制的OLET 1的发光强度,且发光强度将随V
Data的增大而单调增大。而当V
Data>Vgm时,发光控制子电路22根据所写入的数据信号V
Data控制的OLET 1的发光强度,且发光强度将随V
Data的增大而减小。
Therefore, when the data signal V Data ∈ (0, Vgm) provided by the data line Data, the light emission control sub-circuit 22 controls the light emission intensity of OLET 1 according to the written data signal V Data , and the light emission intensity will vary with V Data Increases monotonically. When V Data > Vgm, the light emission control sub-circuit 22 controls the light emission intensity of OLET 1 according to the written data signal V Data , and the light emission intensity will decrease as V Data increases.
本公开实施例提供的像素电路在使用时,其数据线Data的数据信号V
Data可以根据待显示帧的像素或者子像素的灰阶来确定。这样,发光控制子电路22根据数据线Data所提供的数据信号V
Data的大小,可以在控制OLET 1发光的同时,同步控制OLET 1发光电流的大小,即同步控制OLET 1的发光强度,从而控制OLET 1所要显示的灰阶。
When the pixel circuit provided by the embodiment of the present disclosure is in use, the data signal V Data of the data line Data thereof may be determined according to the gray scale of the pixel or sub-pixel of the frame to be displayed. In this way, according to the size of the data signal V Data provided by the data line Data, the light emission control sub-circuit 22 can simultaneously control the light emission of OLET 1 while controlling the size of the light emission current of OLET 1, that is, synchronously control the light emission intensity of OLET 1, thereby controlling Gray scale to be displayed in OLET 1.
图8示出了按照本公开实施例的用于OLET的驱动时序图。在图8中,待显示帧的一帧时间T包括数据写入阶段t
1和发光阶段t
2。以下将结合图7和图8来进行用于像素电路的驱动方法的描述。该驱动方法包括:
FIG. 8 illustrates a driving timing chart for OLET according to an embodiment of the present disclosure. In FIG. 8, a frame time T of a frame to be displayed includes a data writing phase t 1 and a light emitting phase t 2 . The driving method for the pixel circuit will be described below with reference to FIGS. 7 and 8. The driving method includes:
在数据写入阶段t
1,由输入子电路21在栅线Gate所提供的栅极扫描信号V
Gate的控制下,将数据线Data所提供的数据信号V
Data写入发光控制子电路22。示例性地,可以通过向所述发光控制子电路提供第一电压信号而在所述有机发光晶体管的控制极保持与所述数据信号对应的控制极电压。
In the data writing stage t 1 , the input sub-circuit 21 writes the data signal V Data provided by the data line Data into the light emission control sub-circuit 22 under the control of the gate scan signal V Gate provided by the gate line Gate. Exemplarily, a control electrode voltage corresponding to the data signal may be maintained at a control electrode of the organic light emitting transistor by supplying a first voltage signal to the light emission control sub-circuit.
在发光阶段t
2,由发光控制子电路22根据所写入的数据信号V
Data 驱动OLET 1发光。示例性地,可以向所述有机发光晶体管的第一极提供第二电压信号,以及通过对应所述数据信号和所述第二电压端所提供的第二电压信号的驱动电流来驱动所述有机发光晶体管发光。所述数据信号是根据所述像素电路所要显示的灰阶来确定的。
In the light emitting period t 2 , the light emitting control sub-circuit 22 drives the OLET 1 to emit light according to the written data signal V Data . Exemplarily, a second voltage signal may be provided to a first electrode of the organic light emitting transistor, and the organic light may be driven by a driving current corresponding to the data signal and a second voltage signal provided by the second voltage terminal. The light emitting transistor emits light. The data signal is determined according to a gray scale to be displayed by the pixel circuit.
在一些实施例中,假设在图7所示的像素电路中,输入子电路21包括第二晶体管T
2,其选用P型晶体管,呈低电平导通;且发光控制子电路22包括存储电容C,其第一极与电源电压端V
DD连接。
In some embodiments, it is assumed that in the pixel circuit shown in FIG. 7, the input sub-circuit 21 includes a second transistor T 2 , which is a P-type transistor and is turned on at a low level; and the light-emitting control sub-circuit 22 includes a storage capacitor. C, whose first pole is connected to the power voltage terminal V DD .
在数据写入阶段t
1,栅线Gate提供低电平的栅极扫描信号V
Gate,使得第二晶体管T
2导通,将数据线Data上的数据信号V
Data输出至存储电容C的第二极。可选地,在t
1阶段,数据线Data可以提供低电平的数据信号V
Data。存储电容C在数据信号V
Data和电源电压信号V
DD的作用下充电,从而写入数据信号V
Data。
In the data writing stage t 1 , the gate line Gate provides a low-level gate scan signal V Gate , so that the second transistor T 2 is turned on, and the data signal V Data on the data line Data is output to the second of the storage capacitor C. pole. Optionally, the data line Data may provide a low-level data signal V Data during the t 1 phase. The storage capacitor C is charged by the data signal V Data and the power supply voltage signal V DD to write the data signal V Data .
在发光阶段t
2,栅线Gate提供高电平的扫描信号V
Gate,使得第二晶体管T
2关断。可选地,数据线Data可以提供高电平的数据信号V
Data。存储电容C放电,由此根据所写入的数据信号V
Data将OLET 1的控制极的电压保持在导通电压。该导通电压与所写入的数据信号的电压V
Data等值。这样OLET 1便可在该数据信号V
Data以及第二电压端所提供的第二电压信号的驱动下于其第一极和第二极之间形成导通电流,进行发光显示。OLET 1的发光时长依赖于存储电容C将OLET 1的控制极的电压保持在导通电压的时长。
In the light emitting period t 2 , the gate line Gate provides a high-level scanning signal V Gate , so that the second transistor T 2 is turned off. Optionally, the data line Data may provide a high-level data signal V Data . The storage capacitor C is discharged, thereby maintaining the voltage of the control electrode of the OLET 1 at the on-voltage based on the written data signal V Data . This on-voltage is equal to the voltage V Data of the written data signal. In this way, OLET 1 can drive the data signal V Data and the second voltage signal provided by the second voltage terminal to form a conducting current between the first electrode and the second electrode to perform light-emitting display. The light-emission time of OLET 1 depends on the time that the storage capacitor C keeps the voltage of the control electrode of OLET 1 at the on-voltage.
本公开实施例提供的用于像素电路的驱动方法,在数据写入阶段t
1,利用输入子电路21将数据线Data所提供的数据信号V
Data写入发光控制子电路22,并在发光阶段t
2,由发光控制子电路22根据所写入的数据信号V
Data控制对应的OLET发光,可以实现显示装置中各OLET的有源驱动,以便控制各OLET良好的发光显示。
In the driving method for a pixel circuit provided by the embodiment of the present disclosure, at a data writing stage t 1 , an input sub-circuit 21 is used to write a data signal V Data provided by a data line Data into a light-emitting control sub-circuit 22, and in a light-emitting stage t 2, the sub-control circuit 22 controls the light emission corresponding to the data signal emission OLET written V data, the display device can be realized in each of OLET active drive, in order to control the light emitting display OLET each well.
可以理解的是,上述数据线Data的数据信号的电压可以根据待显示帧中要由该像素电路显示的像素或者子像素的灰阶来确定。这样在发光阶段t
2,存储电容C还可以根据所写入的数据信号V
Data来控制OLET 1的发光强度。
It can be understood that the voltage of the data signal of the data line Data can be determined according to the gray scale of the pixel or sub-pixel to be displayed by the pixel circuit in the frame to be displayed. In this way, during the light emitting period t 2 , the storage capacitor C can also control the light emitting intensity of OLET 1 according to the written data signal V Data .
示例性的,OLET 1的发光强度最大时所对应的控制极驱动电压Vgm满足:Exemplarily, the control electrode driving voltage Vgm corresponding to the maximum luminous intensity of OLET1 satisfies:
其中,Vs为OLET 1的第一极的电压;V
TH-e为OLET 1的电子注入势垒电压,V
TH-h为OLET 1的空穴注入势垒电压,μ
e为OLET 1的电子迁移率,μ
h为OLET 1的空穴迁移率。
Among them, Vs is the voltage of the first pole of OLET 1; V TH-e is the electron injection barrier voltage of OLET 1; V TH-h is the hole injection barrier voltage of OLET 1; μ e is the electron migration of OLET 1 Rate, μ h is the hole mobility of OLET 1.
当数据线Data提供的数据信号V
Data∈(0,Vgm)时,存储电容C根据所写入的数据信号V
Data控制的OLET 1的发光强度,且发光强度将随V
Data的增大而单调增大;而当V
Data>Vgm时,存储电容C根据所写入的数据信号V
Data控制的OLET 1的发光强度,且发光强度将随V
Data的增大而减小。
When the data signal V Data ∈ (0, Vgm) provided by the data line Data, the light emission intensity of OLET 1 controlled by the storage capacitor C according to the written data signal V Data , and the light emission intensity will be monotonic as V Data increases When V Data > Vgm, the light emitting intensity of OLET 1 controlled by the storage capacitor C according to the written data signal V Data , and the light emitting intensity will decrease as V Data increases.
由此,本公开实施例提供的驱动方法,根据待显示帧的子像素的灰阶确定数据线Data的数据信号V
Data,可以使得发光控制子电路22根据该数据信号V
Data的大小,在控制OLET发光的同时,同步控制OLET发光电流的大小,即同步控制OLET的发光强度,从而控制OLET所要显示的灰阶。
Therefore, the driving method provided in the embodiment of the present disclosure determines the data signal V Data of the data line Data according to the gray levels of the sub-pixels of the frame to be displayed, so that the light emission control sub-circuit 22 can control the data signal V Data according to the magnitude of the data signal V Data . At the same time as the OLET emits light, it simultaneously controls the size of the light emission current of OLET, that is, synchronously controls the light emission intensity of OLET, thereby controlling the gray level to be displayed by OLET.
在一些实施例中,由于如上面的图4所示,双极型OLET的输出特性曲线相对于y轴对称,所以上述OLET 1的第一极和第二极可具有相同的结构和功能,即OLET 1的第一极可以输入正极性电压信号,也可以输入负极性电压信号。当然,OLET 1的第一极输入正极性电压信号时,OLET 1的第二极需对应输入负极性电压信号;而OLET 1的第一极输入负极性电压信号时,OLET 1的第二极需对应输入正极性电压信号。In some embodiments, as shown in FIG. 4 above, the output characteristic curve of the bipolar OLET is symmetrical with respect to the y-axis, so the first pole and the second pole of the above-mentioned OLET 1 may have the same structure and function, that is, The first pole of OLET1 can input a positive voltage signal or a negative voltage signal. Of course, when the first pole of OLET1 inputs a positive polarity voltage signal, the second pole of OLET1 needs to input a negative polarity voltage signal; and when the first pole of OLET1 inputs a negative voltage signal, the second pole of OLET1 needs Corresponds to the input positive polarity voltage signal.
由此,与OLET 1的第一极连接的第二电压端可以被配置为提供交流电压信号V
AC作为第二电压信号。
Thus, the second voltage terminal connected to the first pole of OLET 1 may be configured to provide an AC voltage signal V AC as the second voltage signal.
图9示出了本公开实施例提供的另一种像素电路的结构示意图。在这一实施例中,OLET 1的第一极与第二电压端连接,第二电压端用于提供交流电压信号V
AC;OLET 1的第二极与公共电压端连接,公共电压端用于提供公共电压信号V
SS。
FIG. 9 is a schematic structural diagram of another pixel circuit according to an embodiment of the present disclosure. In this embodiment, the first pole of OLET 1 is connected to a second voltage terminal, and the second voltage terminal is used to provide an AC voltage signal V AC ; the second pole of OLET 1 is connected to a common voltage terminal, and the common voltage terminal is used for Provide a common voltage signal V SS .
图10示出了图9所示像素电路的示例性的时序控制图。如图10所示,交流电压信号V
AC可以被设置为在第一帧时间T1中为正极性电压信号,且在第二帧时间T2中为负极性电压信号,从而在接连的两帧时间中按帧周期向OLET 1的第一极分别输入正极性和负极性信号。替 换地,也可以以任何合适的方式设置交流电压信号V
AC处于正极性和负极性的周期。
FIG. 10 shows an exemplary timing control diagram of the pixel circuit shown in FIG. 9. As shown in FIG. 10, the AC voltage signal V AC may be set to be a positive voltage signal in a first frame time T1 and a negative voltage signal in a second frame time T2, so that in two consecutive frame times A positive polarity signal and a negative polarity signal are respectively input to the first pole of OLET 1 in a frame period. Alternatively, the period in which the AC voltage signal V AC is in the positive polarity and the negative polarity may be set in any suitable manner.
本公开实施例提供的包含OLET的像素电路,采用交流电压信号V
AC作为第二电压端的传输信号,不仅可以直接使用市电提供的交流电压,避免进行交直流滤波转换,提高电能利用率,还可以有效避免OLET 1因其载流子长期单向运动而老化,从而有利于延长OLET 1的使用寿命。
The pixel circuit including the OLET provided by the embodiment of the present disclosure uses the AC voltage signal V AC as the transmission signal of the second voltage terminal, which can not only directly use the AC voltage provided by the commercial power, avoid AC-DC filtering conversion, but also improve the power utilization rate. It can effectively prevent OLET 1 from aging due to long-term unidirectional movement of its carriers, which is conducive to extending the service life of OLET 1.
图11示出了本公开实施例提供的又一种像素电路的结构示意图。图11中像素电路与图7中所示的类似,区别在于该像素电路还包括发光截止子电路23。该发光截止子电路23与脉宽调制信号线PWM、第三电压端以及OLET 1的控制极连接,用于在脉宽调制信号线PWM所提供的脉宽调制信号(Pulse Width Modulation,简称PWM)的控制下,将第三电压端所提供的第三电压信号V
int施加至OLET 1的控制极,以控制OLET 1关断,且由此停止发光。在这一实施例中,脉宽调制信号的占空比根据要由该像素电路(也即OLET 1)显示的像素的灰阶来确定。
FIG. 11 is a schematic structural diagram of another pixel circuit according to an embodiment of the present disclosure. The pixel circuit in FIG. 11 is similar to that shown in FIG. 7 except that the pixel circuit further includes a light-emitting cut-off sub-circuit 23. The light-emitting cut-off sub-circuit 23 is connected to the pulse width modulation signal line PWM, the third voltage terminal and the control electrode of OLET 1. It is used for the pulse width modulation signal (Pulse Width Modulation, PWM for short) provided by the pulse width modulation signal line PWM. Under the control of the MOSFET, the third voltage signal V int provided by the third voltage terminal is applied to the control electrode of the OLET 1 to control the OLET 1 to be turned off, and thereby stop emitting light. In this embodiment, the duty cycle of the pulse width modulation signal is determined according to the gray scale of a pixel to be displayed by the pixel circuit (ie, OLET 1).
可选的,上述发光截止子电路包括第一晶体管T
1。第一晶体管T
1的控制极与脉宽调制信号线PWM连接,第一晶体管T
1的第一极与第三电压端连接,第一晶体管T
1的第二极与OLET 1的控制极连接。第一晶体管T1可以为N型或P型晶体管。示例性的,第一晶体管T1选用P型晶体管。此外,为了方便像素电路布线,上述OLET 1的控制极、存储电容C的第二极、第一晶体管T
1的第二极以及第二晶体管T
2的第二极分别通过第一节点N
1相连。
Optionally, the light-emitting cut-off sub-circuit includes a first transistor T 1 . The control electrode of the first transistor T 1 is connected to the PWM signal line PWM, the first electrode of the first transistor T 1 is connected to the third voltage terminal, and the second electrode of the first transistor T 1 is connected to the control electrode of OLET 1. The first transistor T1 may be an N-type or a P-type transistor. Exemplarily, the first transistor T1 is a P-type transistor. In addition, in order to facilitate the wiring of the pixel circuit, the above-mentioned control electrode of OLET 1, the second electrode of the storage capacitor C, the second electrode of the first transistor T 1 and the second electrode of the second transistor T 2 are connected through the first node N 1 respectively. .
按照本公开的这一实施例,可以使得发光截止子电路23在对应脉宽调制信号的控制下,控制OLET 1停止发光,以实现对OLET在待显示帧的每帧时间内发光时长的精确控制。通过这样利用OLET在每帧时间内的亮暗变化,可以精确控制OLET所要显示的灰阶。According to this embodiment of the present disclosure, the light-emitting cut-off sub-circuit 23 can be controlled to stop OLET1 under the control of the corresponding pulse width modulation signal, so as to realize precise control of the duration of the light-emission of OLET within each frame time of the frame to be displayed . By using the light and dark changes of OLET in each frame time in this way, the gray scale to be displayed by OLET can be accurately controlled.
而且,在采用上述控制OLET发光时长的方式来控制OLET所要显示的灰阶时,像素电路中数据线Data所提供的数据信号V
Data也无需再根据待显示帧的子像素的灰阶来确定。数据线Data提供的数据信号V
Data可以等于OLET的发光强度最大时的控制极电压Vgm,以确保OLET中的电子和空穴平衡注入,从而确保OLET具备最大的光电转 换效率。由于OLET在发光时的发光强度可以一直控制在最大,所以有效提高了OLET的发光效率。
In addition, when the gray level to be displayed by OLET is controlled by using the above-mentioned way of controlling the light emission duration of OLET, the data signal V Data provided by the data line Data in the pixel circuit does not need to be determined according to the gray level of the sub-pixel of the frame to be displayed. Data signal V Data data line Data provided may be equal to the luminous intensity OLET gate voltage Vgm at maximum, to ensure OLET balance of electron and hole injection, so as to ensure maximum OLET includes the photoelectric conversion efficiency. Since the light emission intensity of OLET can be controlled at the maximum at all times, the light emission efficiency of OLET is effectively improved.
图12示出了图11所示像素电路的时序控制图。如图12所示,待显示帧的一帧时间T被分成三个阶段,即数据写入阶段t
1、发光阶段t
2和发光截止阶段t
3。在数据写入阶段t
1,输入子电路21在栅线Gate所提供的栅极扫描信号V
Gate的控制下,将数据线Data所提供的数据信号V
Data写入发光控制子电路22。数据信号V
Data等于OLET 1的发光强度最大时所对应的控制极驱动电压Vgm,以确保OLET 1在发光阶段t
2可以一直保持在最大发光强度。
FIG. 12 is a timing control diagram of the pixel circuit shown in FIG. 11. As shown in FIG. 12, one frame time T of a frame to be displayed is divided into three phases, that is, a data writing phase t 1 , a light emitting phase t 2, and a light emitting cut-off phase t 3 . In the data writing stage t 1 , the input sub-circuit 21 writes the data signal V Data provided by the data line Data into the light emission control sub-circuit 22 under the control of the gate scan signal V Gate provided by the gate line Gate. The data signal V Data is equal to the control electrode driving voltage Vgm corresponding to the maximum light emission intensity of OLET 1 to ensure that OLET 1 can always maintain the maximum light emission intensity during the light emission period t 2 .
在发光阶段t
2,发光控制子电路22输出所写入的数据信号V
Data,且第二电压信号端输出第二电压信号,驱动OLET 1发光。
In the light-emitting phase t 2 , the light-emitting control sub-circuit 22 outputs the written data signal V Data , and the second voltage signal terminal outputs a second voltage signal to drive OLET 1 to emit light.
在发光截止阶段t
3,向OLET 1输入第三电压信号V
int,控制OLET 1停止发光。发光阶段t
2的时长根据待显示帧的子像素的灰阶来确定。
In the light-off period t 3 , a third voltage signal V int is input to OLET 1 to control OLET 1 to stop emitting light. The duration of the lighting period t 2 is determined according to the gray scale of the sub-pixels of the frame to be displayed.
在一些实施例中,以图11所示的像素电路为例说明如下:像素电路中设有发光截止子电路23。发光截止子电路23的第一晶体管T
1选用P型晶体管,呈低电平导通。在发光截止阶段t
3,脉宽调制信号线PWM输出低电平的脉宽调制信号,第一晶体管T
1导通,将第三电压端所提供的第三电压信号V
int输出至OLET 1的控制极,控制OLET 1停止发光。该第三电压信号V
int应为OLET 1的关断电压。
In some embodiments, the pixel circuit shown in FIG. 11 is taken as an example to explain as follows: the pixel circuit is provided with a light-emitting cut-off sub-circuit 23. The first transistor T 1 of the light-emitting cut-off sub-circuit 23 is a P-type transistor and is turned on at a low level. In the light-off period t 3 , the PWM signal line PWM outputs a low-level PWM signal, the first transistor T 1 is turned on, and the third voltage signal V int provided by the third voltage terminal is output to the OLET 1 Control pole, control OLET 1 to stop emitting light. The third voltage signal V int should be the turn-off voltage of OLET 1.
本公开实施例提供的驱动方法,在根据待显示帧的子像素的灰阶确定对应OLET 1发光阶段t
2的发光时长之后,可以精确控制OLET 1在发光截止阶段t
3停止发光,实现OLET 1在每帧时间内的亮暗闪烁。由于一帧时间通常小于或等于1/60秒,即远小于人眼对显示图像的识别频率,因此,本实施例通过精确控制OLET 1在每帧时间内的亮暗闪烁,可以精确控制OLET 1所要显示的灰阶。而且,在采用上述控制OLET 1发光时长的方式来控制OLET 1所要显示的灰阶时,像素电路中数据线Data所提供的数据信号V
Data也无需再根据待显示帧的子像素的灰阶来确定,数据线Data提供的数据信号V
Data可以等于OLET 1的发光强度最大时所对应的控制极驱动电压Vgm,以确保OLET 1中的电子和空穴平衡注入,从而确保OLET 1具备最大的光电转换效率,即OLET 1在发光阶段t
2可以一直保持在最大发光强度,有效提高了OLET 1的发光效率。
According to the driving method provided in the embodiment of the present disclosure, after determining the light emitting duration corresponding to the lighting period t 2 of OLET 1 according to the gray level of the sub-pixels of the frame to be displayed, it is possible to precisely control the stopping of light emitting at the light emitting cut-off phase t 3 of OLET 1 to realize OLET 1 Light flashes during each frame. Because a frame time is usually less than or equal to 1/60 second, that is, far less than the recognition frequency of the displayed image by the human eye, this embodiment can accurately control OLET 1 by accurately controlling the light and dark flicker of OLET 1 in each frame time. The gray scale to be displayed. Moreover, when the gray level to be displayed by OLET 1 is controlled by using the above-mentioned method of controlling the light emission duration of OLET 1, the data signal V Data provided by the data line Data in the pixel circuit does not need to be based on the gray level of the sub-pixels of the frame to be displayed. determining a data signal V data data line data provided may be equal to control 1 OLET emission intensity corresponding to the maximum drive voltage Vgm, OLET 1 to ensure the balance of electron and hole injection, thereby ensuring the maximum OLET 1 includes photoelectric The conversion efficiency, that is, OLET 1 can always maintain the maximum luminous intensity at the light-emitting stage t 2 , which effectively improves the luminous efficiency of OLET 1.
在一些实施例中,在上述实施例提供的OLET的驱动方法中,第二电压信号端所输出第二电压信号可以为交流电压信号。本实施例采用交流电压信号作为第二电压信号,不仅可以直接使用市电提供的交流电压,避免进行交直流滤波转换,提高电能利用率,还可以有效避免OLET因其载流子长期单向运动而老化,有利于延长OLET的使用寿命。In some embodiments, in the driving method of OLET provided by the above embodiment, the second voltage signal output from the second voltage signal terminal may be an AC voltage signal. This embodiment uses an AC voltage signal as the second voltage signal, which can not only directly use the AC voltage provided by the commercial power, avoid AC / DC filtering conversion, improve the power utilization rate, but also effectively prevent OLET from long-term unidirectional movement of its carriers. And aging is conducive to extending the service life of OLET.
本公开实施例还提供了一种显示装置,所述显示装置包括上述实施例所提供的包括OLET的像素电路。本公开实施例提供的显示装置所能实现的有益效果,与上述实施例所提供的像素电路所能达到的有益效果相同,在此不做赘述。An embodiment of the present disclosure further provides a display device including the pixel circuit including OLET provided by the foregoing embodiment. The beneficial effects that can be achieved by the display device provided by the embodiments of the present disclosure are the same as the beneficial effects that can be achieved by the pixel circuit provided by the foregoing embodiments, and are not described herein.
上述实施例提供的显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框或导航仪等具有显示功能的产品或部件。The display device provided in the foregoing embodiment may be a product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, or a navigator.
本公开实施例还提供了一种信号处理器,其应用于上述实施例中设置有发光截止子电路的像素电路。该信号处理器用于根据OLET所要显示的灰阶,计算脉宽调制信号的占空比,以生成相应的脉宽调制信号,并输出给所述像素电路中的发光截止子电路。也即,本公开实施例提供的信号处理器可以将图像像素相对应的灰阶转换为发光时长,且通过调节像素电路中发光单元的发光时长来调节亮度。可以理解,该信号处理器可以通过显示装置中的信号处理集成芯片实现。An embodiment of the present disclosure further provides a signal processor, which is applied to a pixel circuit provided with a light-emitting cut-off sub-circuit in the above embodiment. The signal processor is configured to calculate the duty cycle of the pulse width modulation signal according to the gray level to be displayed by OLET, to generate a corresponding pulse width modulation signal, and output it to the light-emitting cut-off sub-circuit in the pixel circuit. That is, the signal processor provided by the embodiment of the present disclosure can convert a gray scale corresponding to an image pixel into a light emission duration, and adjust the brightness by adjusting the light emission duration of the light emitting unit in the pixel circuit. It can be understood that the signal processor may be implemented by a signal processing integrated chip in the display device.
在上述实施方式的描述中,具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of the foregoing embodiments, specific features, structures, materials, or characteristics may be combined in a suitable manner in any one or more embodiments or examples.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above is only a specific implementation of the present disclosure, but the scope of protection of the present disclosure is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present disclosure. It should be covered by the protection scope of this disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.