CN111081740A - Display panel - Google Patents
Display panel Download PDFInfo
- Publication number
- CN111081740A CN111081740A CN201911241759.8A CN201911241759A CN111081740A CN 111081740 A CN111081740 A CN 111081740A CN 201911241759 A CN201911241759 A CN 201911241759A CN 111081740 A CN111081740 A CN 111081740A
- Authority
- CN
- China
- Prior art keywords
- layer
- transport layer
- light
- disposed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 91
- 230000005525 hole transport Effects 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims description 71
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000032258 transport Effects 0.000 description 45
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the application provides a display panel, the display panel in this application wherein the base plate has relative first face and the second face that sets up, first metal level sets up the first face at the base plate, light-emitting transistor can realize on-off control and luminous simultaneously, light-emitting transistor sets up between base plate and first metal level or light-emitting transistor sets up the one side of keeping away from the base plate at first metal level, wherein, light-emitting transistor includes hole transport layer, luminescent layer and electron transport layer, hole transport layer and electron transport layer set up the upper and lower both sides at the luminescent layer, when light-emitting transistor set up the base plate with when between the first metal level, the second metal level sets up between base plate and light-emitting transistor, when light-emitting transistor sets up the one side of keeping away from the base plate at first metal level, the second metal level sets up the one side of keeping away from first metal level at. The pixel structure can be simplified, the process difficulty is reduced, and the production cost is reduced.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel.
Background
In the current AMOLED (active matrix organic light emitting diode) display technology, the AMOLED display mode adopts a TFT-OLED driving mode, i.e. a TFT (thin film transistor) switch matrix is first prepared, and then an OLED light emitting unit is prepared. Although the structure can realize better display control, the TFT switch matrix and the OLED light-emitting unit are prepared by adopting two-stage process, and the process is complex and tedious in process procedure and high in cost.
Therefore, it is an urgent technical problem to be solved by those skilled in the art to provide a display panel with simple process and low cost.
Disclosure of Invention
The embodiment of the application provides a display panel, which can simplify the manufacturing process of the display panel and reduce the production cost.
The application provides a display panel, including:
the substrate is provided with a first surface and a second surface which are oppositely arranged;
the first metal layer is arranged on the first surface of the substrate;
the light-emitting transistor can realize on-off control and light emission at the same time, is arranged between the substrate and the first metal layer or is arranged on one side of the first metal layer far away from the substrate, and comprises a hole transport layer, a light-emitting layer and an electron transport layer, wherein the hole transport layer and the electron transport layer are arranged on the upper side and the lower side of the light-emitting layer;
and the second metal layer is arranged between the substrate and the light-emitting transistor when the light-emitting transistor is arranged between the substrate and the first metal layer, and the second metal layer is arranged on one side of the light-emitting transistor far away from the first metal layer when the light-emitting transistor is arranged on one side of the first metal layer far away from the substrate.
In some embodiments, the hole transport layer is disposed on a side of the first metal layer away from the substrate, the light emitting layer is disposed on a side of the hole transport layer away from the first metal layer, the electron transport layer is disposed on a side of the light emitting layer away from the hole transport layer, and the second metal layer is disposed on a side of the electron transport layer away from the light emitting layer.
In some embodiments, further comprising an insulating layer disposed between the first metal layer and the hole transport layer.
In some embodiments, the electron transport layer is disposed on a side of the first metal layer away from the substrate, the light emitting layer is disposed on a side of the electron transport layer away from the first metal layer, the hole transport layer is disposed on a side of the light emitting layer away from the electron transport layer, and the second metal layer is disposed on a side of the hole transport layer away from the light emitting layer.
In some embodiments, further comprising an insulating layer disposed between the first metal layer and the electron transport layer.
In some embodiments, the electron transport layer is disposed on the first side of the substrate, the second metal layer is disposed between the substrate and the electron transport layer, the light emitting layer is disposed on a side of the electron transport layer away from the substrate, the hole transport layer is disposed on a side of the light emitting layer away from the electron transport layer, and the first substrate is disposed on a side of the hole transport layer away from the light emitting layer.
In some embodiments, further comprising an insulating layer disposed between the hole transport layer and the first metal layer.
In some embodiments, the hole transport layer is disposed on the first side of the substrate, the second metal layer is disposed between the substrate and the hole transport layer, the light-emitting layer is disposed on a side of the hole transport layer away from the substrate, the electron transport layer is disposed on a side of the light-emitting layer away from the hole transport layer, and the first substrate is disposed on a side of the electron transport layer away from the light-emitting layer.
In some embodiments, further comprising an insulating layer disposed between the electron transport layer and the first metal layer.
In some embodiments, the pixel driving circuit further includes a pixel driving circuit, the pixel driving circuit includes two transistors, including a switching transistor and a light emitting transistor, a source of the switching transistor is connected to the data line, a gate of the switching transistor is connected to the scan line, a drain of the switching transistor is connected to the gate of the light emitting transistor, a source of the light emitting transistor is connected to the ground point, a drain of the light emitting transistor is connected to the power supply, a connection point is provided between the switching transistor and the light emitting transistor, one end of the storage capacitor is connected to the connection point, and the other end of the storage capacitor is connected to the ground point.
The display panel provided by the embodiment of the application has a substrate with a first surface and a second surface which are oppositely arranged, a first metal layer is arranged on the first surface of the substrate, the light-emitting transistor can realize on-off control and light emission simultaneously, the light-emitting transistor is arranged between the substrate and the first metal layer or arranged on one side of the substrate far away from the first metal layer, wherein, the light-emitting transistor comprises a hole transmission layer, a light-emitting layer and an electron transmission layer, the hole transmission layer and the electron transmission layer are arranged on the upper and lower sides of the light-emitting layer, when the light-emitting transistor is arranged between the substrate and the first metal layer, the second metal layer is arranged between the substrate and the light-emitting transistor, when the light-emitting transistor is arranged on one side of the substrate far away from the first metal layer, the second metal layer is arranged on one side of the light-emitting transistor far away from the first metal layer. Through in this application hole transport layer and electron transport layer set up the upper and lower both sides of luminescent layer form light emitting transistor, and light emitting transistor can realize on-off control and luminous simultaneously, can simplify the emitting pixel structure by a wide margin like this, reduces technology process and degree of difficulty, reduces manufacturing cost.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a first structure of a display panel according to an embodiment of the present disclosure.
Fig. 2 is a schematic view of a second structure of a display panel according to an embodiment of the present disclosure.
Fig. 3 is a schematic view of a third structure of a display panel according to an embodiment of the present application.
Fig. 4 is a schematic diagram of a fourth structure of the display panel according to the embodiment of the present application.
Fig. 5 is a schematic view of a fifth structure of a display panel according to an embodiment of the present disclosure.
Fig. 6 is a schematic view of a sixth structure of a display panel according to an embodiment of the present application.
Fig. 7 is a schematic structural diagram of a pixel driving circuit in a display panel according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that in the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be configured in a specific orientation, and operate, and thus, should not be construed as limiting the present application.
The embodiments of the present application provide a display panel, which is described in detail below.
Referring to fig. 1, fig. 1 is a schematic view of a first structure of a display panel according to an embodiment of the present disclosure.
The display panel 100 of the embodiment of the present disclosure includes a substrate 10, a first metal layer 20, a light emitting transistor 30, and a second metal layer 40. The first metal layer 20 is disposed on the first surface 10a of the substrate 10, the light emitting transistor 30 can simultaneously realize on-off control and light emission, and the light emitting transistor 30 is disposed between the substrate 10 and the first metal layer 20, wherein the light emitting transistor 30 includes a hole transport layer 31, a light emitting layer 32, and an electron transport layer 33, the hole transport layer 31 and the electron transport layer 33 are disposed on upper and lower sides of the light emitting layer 32, and the second metal layer 40 is disposed between the substrate 10 and the light emitting transistor 30.
Referring to fig. 2, fig. 2 is a schematic view of a second structure of a display panel according to an embodiment of the present disclosure. The display panel 100 of the embodiment of the present disclosure includes a substrate 10, a first metal layer 20, a light emitting transistor 30, and a second metal layer 40. The first metal layer 20 is disposed on the first surface 10a of the substrate 10, the light emitting transistor 30 can simultaneously realize on-off control and light emission, the light emitting transistor 30 is disposed on a side of the first metal layer 20 away from the substrate 10, wherein the light emitting transistor 30 includes a hole transport layer 31, a light emitting layer 32 and an electron transport layer 33, the hole transport layer 31 and the electron transport layer 33 are disposed on upper and lower sides of the light emitting layer 32, and the second metal layer 40 is disposed on a side of the light emitting transistor 30 away from the first metal layer 20.
The first surface 10a may be an upper surface of the substrate 10, and the first surface 10b may be a lower surface of the substrate 10. Of course, the first surface 10a may be the lower surface of the substrate 10, and the first surface 10b may be the upper surface of the substrate 10. In the embodiment of the present application, it is assumed that the first surface 10a is the upper surface of the substrate 10 and the first surface 10b is the lower surface of the substrate 10, unless otherwise specified.
In addition, the first metal layer 20 may include a gate line, a capacitor bottom electrode layer, and the like.
In addition, the hole transport layer 31 and the electron transport layer 33 are disposed on both upper and lower sides of the light emitting layer 32, the hole transport layer 31 may be disposed on an upper side of the light emitting layer 32, and the electron transport layer 33 may be disposed on a lower side of the light emitting layer 32. Of course, the hole transport layer 31 may be provided on the lower side of the light-emitting layer 32, and the electron transport layer 33 may be provided on the upper side of the light-emitting layer 32. The hole transport layer 31 may lower a barrier for injecting holes from the anode in the first metal layer 20, enabling holes to be efficiently injected from the anode into the organic light emitting diode device OLED. The light-emitting layer 32 enables recombination of injected electrons and holes to occur in the light-emitting layer 32. The Emission layer 32 (EML) has a hole transport layer 31 and an electron transport layer 33 on both sides, the hole transport layer 31 transports holes into the Emission layer 32, the electron transport layer 33 transports electrons into the Emission layer 32, and the electrons and holes are recombined in the Emission layer 32 to emit light. The electron transport layer 33 can input electrons into the light emitting layer 32. The light-emitting transistor 30 can be formed from the hole transport layer 31, the light-emitting layer 32, and the electron transport layer 33, and the light-emitting transistor 30 can achieve both switching control and light emission.
In addition, the second metal layer 40 includes a power line, a gate line, a source electrode, a drain electrode, a capacitor top electrode layer, and the like.
Referring to fig. 3, fig. 3 is a schematic view of a third structure of a display panel according to an embodiment of the present disclosure. The hole transport layer 31 is disposed on a side of the first metal layer 20 away from the substrate 10, the light emitting layer 32 is disposed on a side of the hole transport layer 31 away from the first metal layer 20, the electron transport layer 33 is disposed on a side of the light emitting layer 32 away from the hole transport layer 31, and the second metal layer 40 is disposed on a side of the electron transport layer 33 away from the light emitting layer 32. The insulating layer 50 is disposed between the first metal layer 20 and the hole transport layer 31.
It should be noted that the insulating layer 50 includes a tft switch insulating layer, a capacitor dielectric layer, and a pixel defining layer. The insulating layer 50 prevents a short circuit between the first metal layer 20 and the light emitting transistor 30.
Referring to fig. 4, fig. 4 is a schematic diagram of a fourth structure of the display panel according to the embodiment of the present disclosure. The display panel 100 further includes an insulating layer 50, the electron transport layer 33 is disposed on a side of the first metal layer 20 away from the substrate 10, the light emitting layer 32 is disposed on a side of the electron transport layer 33 away from the first metal layer 20, the hole transport layer 31 is disposed on a side of the light emitting layer 32 away from the electron transport layer 33, and the second metal layer 40 is disposed on a side of the hole transport layer 31 away from the light emitting layer 32. The insulating layer 50 is disposed between the first metal layer 20 and the electron transport layer 33.
Referring to fig. 5, fig. 5 is a schematic view of a fifth structure of a display panel according to an embodiment of the present disclosure. The display panel 100 further includes an insulating layer 50, the electron transport layer 33 is disposed on the first surface 10a of the substrate 10, the second metal layer 40 is disposed between the substrate 10 and the electron transport layer 33, the light emitting layer 32 is disposed on a side of the electron transport layer 33 away from the substrate 10, the hole transport layer 31 is disposed on a side of the light emitting layer 32 away from the electron transport layer 33, and the first substrate 10 is disposed on a side of the hole transport layer 31 away from the light emitting layer 32. The insulating layer 50 is disposed between the hole transport layer 31 and the first metal layer 20.
Referring to fig. 6, fig. 6 is a schematic view of a sixth structure of a display panel according to an embodiment of the present disclosure. The display panel 100 further includes an insulating layer 50, the hole transport layer 31 is disposed on the first surface 10a of the substrate 10, the second metal layer 40 is disposed between the substrate 10 and the hole transport layer 31, the light emitting layer 32 is disposed on a side of the hole transport layer 31 away from the substrate 10, the electron transport layer 33 is disposed on a side of the light emitting layer 32 away from the hole transport layer 31, and the first substrate 10 is disposed on a side of the electron transport layer 33 away from the light emitting layer 32. The insulating layer 50 is disposed between the electron transport layer 33 and the first metal layer 20.
Referring to fig. 7, fig. 7 is a schematic structural diagram of a pixel driving circuit in a display panel according to an embodiment of the present disclosure. The display panel further includes a pixel driving circuit 60, the pixel driving circuit 60 includes two transistors including a switching transistor 61 and a light emitting transistor 63, a source 611 of the switching transistor 61 is connected to the data line 62, a gate 612 of the switching transistor 61 is connected to the scan line 66, a drain 613 of the switching transistor 61 is connected to the gate of the light emitting transistor 63, a source of the light emitting transistor 63 is connected to the ground 67, a drain of the light emitting transistor 63 is connected to the power supply 68, a connection point 64 is provided between the switching transistor and the light emitting transistor 63, one end of the storage capacitor 62 is connected to the connection point 64, and the other end is connected to the ground 67
It should be noted that the light emitting transistor 63 is the light emitting transistor described in the above embodiments, and redundant description is not repeated in this embodiment.
The display panel 100 provided in the embodiment of the present application includes a substrate 10 having a first surface 10a and a second surface 10b opposite to each other, a first metal layer 20 disposed on the first surface 10a of the substrate 10, and a light emitting transistor 30 capable of simultaneously performing on-off control and light emission, wherein the light emitting transistor 30 is disposed between the substrate 10 and the first metal layer 20 or the light emitting transistor 30 is disposed on a side of the first metal layer 20 away from the substrate 10, wherein the light emitting transistor 30 includes a hole transport layer 31, a light emitting layer 32, and an electron transport layer 33, the hole transport layer 31 and the electron transport layer 33 are disposed on upper and lower sides of the light emitting layer 32, and when the light emitting transistor 30 is disposed between the substrate 10 and the first metal layer 20, the second metal layer 40 is disposed between the substrate 10 and the light emitting transistor 30, when the light emitting transistor 30 is disposed on the side of the first metal layer 20 away from the substrate 10, the second metal layer 40 is disposed on the side of the light emitting transistor 30 away from the first metal layer 20. In the application, the hole transport layer 31 and the electron transport layer 33 are arranged on the upper side and the lower side of the light-emitting layer 32 to form the light-emitting transistor 60, and the light-emitting transistor 60 can realize on-off control and light emission at the same time, so that the light-emitting pixel structure can be greatly simplified, the process and difficulty are reduced, and the manufacturing cost is reduced.
The display panel provided by the embodiment of the present application is described in detail above, and the principle and the implementation manner of the present application are explained in the present application by applying specific examples, and the description of the above embodiment is only used to help understanding the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A display panel, comprising:
the substrate is provided with a first surface and a second surface which are oppositely arranged;
the first metal layer is arranged on the first surface of the substrate;
the light-emitting transistor can realize on-off control and light emission at the same time, is arranged between the substrate and the first metal layer or is arranged on one side of the first metal layer far away from the substrate, and comprises a hole transport layer, a light-emitting layer and an electron transport layer, wherein the hole transport layer and the electron transport layer are arranged on the upper side and the lower side of the light-emitting layer;
and the second metal layer is arranged between the substrate and the light-emitting transistor when the light-emitting transistor is arranged between the substrate and the first metal layer, and the second metal layer is arranged on one side of the light-emitting transistor far away from the first metal layer when the light-emitting transistor is arranged on one side of the first metal layer far away from the substrate.
2. The display panel according to claim 1, wherein the hole transport layer is disposed on a side of the first metal layer away from the substrate, the light-emitting layer is disposed on a side of the hole transport layer away from the first metal layer, the electron transport layer is disposed on a side of the light-emitting layer away from the hole transport layer, and the second metal layer is disposed on a side of the electron transport layer away from the light-emitting layer.
3. The display panel according to claim 2, further comprising an insulating layer provided between the first metal layer and the hole transport layer.
4. The display panel according to claim 1, wherein the electron transport layer is disposed on a side of the first metal layer away from the substrate, the light-emitting layer is disposed on a side of the electron transport layer away from the first metal layer, the hole transport layer is disposed on a side of the light-emitting layer away from the electron transport layer, and the second metal layer is disposed on a side of the hole transport layer away from the light-emitting layer.
5. The display panel according to claim 4, further comprising an insulating layer provided between the first metal layer and the electron transport layer.
6. The display panel according to claim 1, wherein the electron transport layer is disposed on the first surface of the substrate, the second metal layer is disposed between the substrate and the electron transport layer, the light emitting layer is disposed on a side of the electron transport layer away from the substrate, the hole transport layer is disposed on a side of the light emitting layer away from the electron transport layer, and the first substrate is disposed on a side of the hole transport layer away from the light emitting layer.
7. The display panel according to claim 6, further comprising an insulating layer provided between the hole transport layer and the first metal layer.
8. The display panel according to claim 1, wherein the hole transport layer is disposed on the first surface of the substrate, the second metal layer is disposed between the substrate and the hole transport layer, the light emitting layer is disposed on a side of the hole transport layer away from the substrate, the electron transport layer is disposed on a side of the light emitting layer away from the hole transport layer, and the first substrate is disposed on a side of the electron transport layer away from the light emitting layer.
9. The display panel according to claim 8, further comprising an insulating layer provided between the electron transport layer and the first metal layer.
10. The display panel according to claim 1, further comprising a pixel driving circuit, wherein the pixel driving circuit comprises two transistors including a switching transistor and a light emitting transistor, a source of the switching transistor is connected to the data line, a gate of the switching transistor is connected to the scan line, a drain of the switching transistor is connected to the gate of the light emitting transistor, a source of the light emitting transistor is connected to a ground point, a drain of the light emitting transistor is connected to the power supply, a connection point is provided between the switching transistor and the light emitting transistor, one end of the storage capacitor is connected to the connection point, and the other end of the storage capacitor is connected to the ground point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911241759.8A CN111081740A (en) | 2019-12-06 | 2019-12-06 | Display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911241759.8A CN111081740A (en) | 2019-12-06 | 2019-12-06 | Display panel |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111081740A true CN111081740A (en) | 2020-04-28 |
Family
ID=70313037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911241759.8A Pending CN111081740A (en) | 2019-12-06 | 2019-12-06 | Display panel |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111081740A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022178810A1 (en) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | Light-emitting transistor and display substrate |
Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1237258A (en) * | 1997-07-02 | 1999-12-01 | 精工爱普生株式会社 | Display device |
JP2000356963A (en) * | 1999-06-14 | 2000-12-26 | Seiko Epson Corp | Display device, circuit substrate, and manufacture of the substrate |
WO2007043696A1 (en) * | 2005-10-14 | 2007-04-19 | Pioneer Corporation | Thin film semiconductor device and display |
CN101523631A (en) * | 2006-10-12 | 2009-09-02 | 出光兴产株式会社 | Organic thin film transistor element and organic thin film light emitting transistor |
JP2011077363A (en) * | 2009-09-30 | 2011-04-14 | Casio Computer Co Ltd | Transistor substrate, and method of manufacturing the same |
CN102308404A (en) * | 2009-02-10 | 2012-01-04 | 松下电器产业株式会社 | Light-emitting element, display device, and method for manufacturing light-emitting element |
KR20120090190A (en) * | 2011-02-07 | 2012-08-17 | 엘지디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
CN103794724A (en) * | 2012-10-30 | 2014-05-14 | 三星显示有限公司 | Organic light emitting transistor and display device including the same |
CN104094436A (en) * | 2012-02-27 | 2014-10-08 | E.T.C.有限责任公司 | Organic light emitting ambipolar field effect transistor with distributed light emission |
CN104851906A (en) * | 2015-05-15 | 2015-08-19 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof, driving method thereof and display device |
EP2911214A1 (en) * | 2014-02-20 | 2015-08-26 | Amorosi, Antonio | Multilayer structure of an OLET transistor |
CN107112347A (en) * | 2014-11-14 | 2017-08-29 | E.T.C.有限责任公司 | Display containing improvement pixel structure |
CN107170748A (en) * | 2017-04-20 | 2017-09-15 | 上海天马微电子有限公司 | Array substrate, display panel and display device |
CN107611281A (en) * | 2017-09-26 | 2018-01-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of near-infrared is to visible ray upconverter and preparation method thereof |
CN109036283A (en) * | 2018-09-06 | 2018-12-18 | 京东方科技集团股份有限公司 | The driving circuit and driving method of organic light-emitting field effect transistor, display device |
CN109817688A (en) * | 2019-02-19 | 2019-05-28 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel, preparation method and display device |
CN109920922A (en) * | 2017-12-12 | 2019-06-21 | 京东方科技集团股份有限公司 | Organic luminescent device and preparation method thereof, display base plate, display driving method |
CN110048010A (en) * | 2018-01-15 | 2019-07-23 | 京东方科技集团股份有限公司 | Channel transistor and display panel |
CN110416427A (en) * | 2018-04-26 | 2019-11-05 | 京东方科技集团股份有限公司 | Organic light-emitting transistor and its manufacturing method, display panel and electronic device |
-
2019
- 2019-12-06 CN CN201911241759.8A patent/CN111081740A/en active Pending
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1237258A (en) * | 1997-07-02 | 1999-12-01 | 精工爱普生株式会社 | Display device |
JP2000356963A (en) * | 1999-06-14 | 2000-12-26 | Seiko Epson Corp | Display device, circuit substrate, and manufacture of the substrate |
WO2007043696A1 (en) * | 2005-10-14 | 2007-04-19 | Pioneer Corporation | Thin film semiconductor device and display |
CN101523631A (en) * | 2006-10-12 | 2009-09-02 | 出光兴产株式会社 | Organic thin film transistor element and organic thin film light emitting transistor |
CN102308404A (en) * | 2009-02-10 | 2012-01-04 | 松下电器产业株式会社 | Light-emitting element, display device, and method for manufacturing light-emitting element |
JP2011077363A (en) * | 2009-09-30 | 2011-04-14 | Casio Computer Co Ltd | Transistor substrate, and method of manufacturing the same |
KR20120090190A (en) * | 2011-02-07 | 2012-08-17 | 엘지디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
CN104094436A (en) * | 2012-02-27 | 2014-10-08 | E.T.C.有限责任公司 | Organic light emitting ambipolar field effect transistor with distributed light emission |
CN103794724A (en) * | 2012-10-30 | 2014-05-14 | 三星显示有限公司 | Organic light emitting transistor and display device including the same |
EP2911214A1 (en) * | 2014-02-20 | 2015-08-26 | Amorosi, Antonio | Multilayer structure of an OLET transistor |
CN107112347A (en) * | 2014-11-14 | 2017-08-29 | E.T.C.有限责任公司 | Display containing improvement pixel structure |
CN104851906A (en) * | 2015-05-15 | 2015-08-19 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof, driving method thereof and display device |
CN107170748A (en) * | 2017-04-20 | 2017-09-15 | 上海天马微电子有限公司 | Array substrate, display panel and display device |
CN107611281A (en) * | 2017-09-26 | 2018-01-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of near-infrared is to visible ray upconverter and preparation method thereof |
CN109920922A (en) * | 2017-12-12 | 2019-06-21 | 京东方科技集团股份有限公司 | Organic luminescent device and preparation method thereof, display base plate, display driving method |
CN110048010A (en) * | 2018-01-15 | 2019-07-23 | 京东方科技集团股份有限公司 | Channel transistor and display panel |
CN110416427A (en) * | 2018-04-26 | 2019-11-05 | 京东方科技集团股份有限公司 | Organic light-emitting transistor and its manufacturing method, display panel and electronic device |
CN109036283A (en) * | 2018-09-06 | 2018-12-18 | 京东方科技集团股份有限公司 | The driving circuit and driving method of organic light-emitting field effect transistor, display device |
CN109817688A (en) * | 2019-02-19 | 2019-05-28 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel, preparation method and display device |
Non-Patent Citations (1)
Title |
---|
宋丽: "高效有机发光场效应晶体管的研究", 《中国博士学位论文全文数据库》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022178810A1 (en) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | Light-emitting transistor and display substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20210226141A1 (en) | Flexible display panel and manufacturing method for the same | |
CN108364982B (en) | OLED display device | |
KR101699911B1 (en) | Organic light emitting diode display | |
US7605536B2 (en) | Light emitting device and light emitting display | |
KR101320655B1 (en) | Organic Light Emitting Display Device | |
CN1862825B (en) | Light emitting device and manufacturing method thereof and light emitting display and manufacturing method thereof | |
US8003417B2 (en) | Organic electroluminescent display device and method of manufacturing the same | |
US10396135B2 (en) | OLED substrate and manufacturing method thereof, and display device | |
CN109003573B (en) | Organic light emitting display panel and display device | |
US10565930B2 (en) | Power configuration structure and method for top-emitting AMOLED panel | |
CN208111487U (en) | array substrate and display device | |
CN111403452A (en) | Display panel, display module and electronic device | |
US20200083474A1 (en) | Display apparatus | |
US9396683B2 (en) | Pixel driving circuit and display device | |
CN111081740A (en) | Display panel | |
TWI610481B (en) | Organic light-emitting element and manufacturing method thereof | |
CN111081721B (en) | Display panel and display device | |
CN110164380B (en) | Pixel compensation circuit and OLED display device | |
CN100433402C (en) | Organic light emitting diode | |
KR20090078633A (en) | Organic light emitting display | |
US11997879B2 (en) | Array substrate, display panel, and display device for improving display effect | |
CN109872690B (en) | Display panel | |
KR100600849B1 (en) | Backward-emitting type AMOLED | |
US9006723B2 (en) | Organic light-emitting diode (OLED) display | |
CN112164700B (en) | Array substrate and display panel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200428 |
|
RJ01 | Rejection of invention patent application after publication |