Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
  • H01L33/502—Wavelength conversion materials
  • H01L33/504—Elements with two or more wavelength conversion materials
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
  • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
  • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
  • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
  • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
  • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/58—Optical field-shaping elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
  • H01L33/502—Wavelength conversion materials

Definitions

• Phosphor converted white LED light emitting diode (LED) devices typically use a blue LED that is covered with a layer of luminescent materials that partially absorb the blue LED hght and emit green, yellow, and red light.
• the luminescent materials typically contain a mixed powder of inorganic materials.
• CIE Commission on Illumination
• SPD spectral power distribution
• the hght emitted from the LED is used in combination with camera systems (e.g., as a flash), it may be particularly important to avoid sharp peeks and minima in the SPD.
• a light emitting diode (LED) device may include an LED die having a first surface on a substrate.
• a first phosphor layer may be formed on a second surface and sides of the LED die. The second surface may be opposite the first surface.
• a second phosphor layer may be formed on the first phosphor layer.
• the second phosphor layer may have a peak emission wavelength (L pk 2) located between a peak emission wavelength of the LED die (L pk D) and a peak emission wavelength of the first phosphor layer (L pk l).
• a light emitting diode (LED) device may include an LED die having a first surface on a substrate.
• a first phosphor layer may be formed on a second surface of the LED die. The second surface may be opposite the first surface.
• a second phosphor layer may be formed on the first phosphor layer.
• the second phosphor layer may have a peak emission wavelength (L pk 2) located between a peak emission wavelength of the LED die (L pk D) and a peak emission wavelength of the first phosphor layer (L pk l).
• a reflective coating formed on sides of the LED die, sides of the first phosphor layer, and sides of the second phosphor layer.
• FIG. 1 is a cross section view illustrating an LED die on a substrate
• FIG. 2 is a cross section view illustrating forming a first phosphor layer on the LED ;
• FIG. 3 is a cross section view illustrating forming a second phosphor layer on the first phosphor layer to form a LED device
• FIG. 4 is a cross section view illustrating optionally forming a lens around the LED device
• FIG. 5 is a cross-section view illustrating optionally removing portions of the first phosphor layer and the second phosphor layer from the LED device;
• FIG. 6 is a cross-section view illustrating forming a reflective coating on sides of the LED die, the remaining portion of the first phosphor layer, and the remaining portion of the second phosphor layer to form an LED device;
• FIG. 7 is a cross section view illustrating optionally forming a lens around the LED device
• FIG. 8 is a chart illustrating emission spectra comparing the LED die coated with only the first phosphor layer and the LED die coated with both the first phosphor layer and the second phosphor layer; and [0014]
• FIG. 9 is a chart illustrating the emission spectra of the second phosphor layer and the LED die.
• CIE Commission on Illumination
• SPD spectral power distribution
• the emission peak of a phosphor component may have to be close to the emission peak of the blue LED.
• a phosphor material absorbs a photon, it gains energy and enters an excited state.
• One way for the phosphor material to relax is to emit a photon, thus losing its energy (another method would be the loss of energy as heat).
• this energy difference is the Stokes shift.
• Stokes fluorescence is the emission of a longer-wavelength photon (lower frequency or energy) by a molecule that has absorbed a photon of shorter wavelength (higher frequency or energy).
• the Stokes shift may be the distance between an absorption maximum wavelength and an emission maximum wavelength. Due to the Stokes shift, a large concentration of phosphor material may be required. Reabsorption of emitted light by other phosphors may need to be reduced as much as possible.
• the following description includes systems, methods, and apparatuses for using multiple phosphor layers formed on an LED to reduce reabsorption of hght emitted by the outermost phosphor layer and increase the efficiency of the LED at high CRI.
• a second phosphor layer having an emission peak located between an emission peak of a first phosphor layer and an emission peak of the LED By using a second phosphor layer having an emission peak located between an emission peak of a first phosphor layer and an emission peak of the LED, the wavelength gap between the LED emissions and the emissions of the first phosphor layer may be filled effectively.
• FIG. 1 a cross section view illustrating an LED die 104 on a substrate 104 is shown.
• a first surface of the LED die 104 may located on the substrate 102 and a second surface of the LED die may be located opposite the first surface.
• the LED die 104 may be any type of conventional semiconductor light emitting device and may be formed, attached, or grown on the substrate 102.
• FIG. 1 shows an illustrative example of a type of LED die 104 that may be used and is not intended to limit the description below.
• the LED die 104 may be a type Ill-nitride LED known in the art.
• III -nitride LEDs are fabricated by epitaxially growing a stack of semiconductor layers of different compositions and dopant concentrations on a sapphire, silicon carbide, III- nitride, or other suitable substrate by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxial techniques.
• MOCVD metal-organic chemical vapor deposition
• MBE molecular beam epitaxy
• the stack often includes one or more n-type layers doped with, for example, sihcon, formed over the substrate, one or more light emitting layers in an active region (e.g., a p-n diode) formed over the n-type layer or layers, and one or more p-type layers doped with, for example, magnesium, formed over the active region. Electrical contacts are formed on the n-type and p-type regions.
• the LED die 104 may emit blue or UV light.
• semiconductor hght emitting devices besides LEDs such as laser diodes and semiconductor light emitting devices made from other materials systems such as other III-V materials, Ill-phosphide, Ill-arsenide, II-VI materials, ZnO, or Si-based materials may be used.
• the device of FIG. 1 may be formed by growing a type Ill-nitride semiconductor structure on a substrate 102 as is known in the art.
• the substrate 102 may be sapphire or any suitable substrate such as, for example, SiC, Si, GaN, or a composite substrate.
• a surface of the substrate 102 on which the type Ill-nitride semiconductor structure is grown may be patterned, roughened, or textured before growth, which may improve light extraction from the device.
• a surface of the substrate 102 opposite the growth surface i.e. the surface through which a majority of light is extracted in a flip chip configuration
• the semiconductor structure includes a light emitting or active region sandwiched between n- and p-type regions.
• An n-type region 16 may be grown first and may include multiple layers of different compositions and dopant concentration.
• the n-type region 16 may include preparation layers such as buffer layers or nucleation layers, and/or layers designed to facilitate removal of the growth substrate, which may be n-type or not intentionally doped, and n- or even p-type device layers designed for particular optical, material, or electrical properties desirable for the light emitting region to efficiently emit light.
• a hght emitting or active region 18 is grown over the n-type region 16.
• suitable light emitting regions 18 include a single thick or thin light emitting layer, or a multiple quantum well hght emitting region including multiple thin or thick light emitting layers separated by barrier layers.
• a p-type region 20 may then be grown over the light emitting region. Like the n-type region, the p-type region may include multiple layers of different composition, thickness, and dopant concentration, including layers that are not intentionally doped or n-type layers.
• a p-contact may be formed on the surface of the p-type region 18.
• the p-contact 21 may include multiple conductive layers such as a reflective metal and a guard metal which may prevent or reduce electromigration of the reflective metal.
• the reflective metal is often silver but any suitable material or materials may be used.
• a portion of the p-contact 21, the p-type region 20, and the active region 18 may be removed to expose a portion of the n- type region 16 on which an n-contact 22 is formed.
• the n-contact 22 and the p- contact 21 may be electrically isolated from each other by a gap 25 which may be filled with a dielectric such as an oxide of sihcon or any other suitable material. Multiple n-contact vias may be formed.
• the n-contact 22 and the p-contact 21 are not limited to the arrangement illustrated in FIG. 1.
• the n-contact 22 and the p-contact 21 may be redistributed to form bond pads with a dielectric/metal stack, as is known in the art.
• one or more interconnects 26 and 28 may be formed on or electrically connected to the n-contact 22 and the p-contact 21.
• the interconnect 26 may be electrically connected to n-contact 22.
• the interconnect 28 may be electrically connected to p- contact 21.
• the interconnects 26 and 28 may be electrically isolated from the n- contact 22 and the p-contact 21 and from each other by the dielectric layer 24 and a gap 27.
• the interconnects 26 and 28 may be, for example, solder, stud bumps, gold layers, or any other suitable structure.
• the semiconductor structure, n-contact 22, p-contact 21, and interconnects 26 and 28 are shown in the following figures as LED structure 104.
• the substrate 102 may be thinned or entirely removed.
• the surface of substrate 102 may be exposed by thinning is patterned, textured, or roughened to improve light extraction.
• FIG. 2 a cross section view illustrating forming a first phosphor layer 202 on the LED die 104 is shown.
• the first phosphor layer 202 may be applied to the second surface and sides of the LED die 104.
• the first phosphor layer 202 may have a thickness ranging from approximately lpm to approximately 150pm.
• the first phosphor layer 202 may be formed using a conventional deposition process.
• the first phosphor layer 202 may be a sheet placed atop the LED die 104 and then processed to conform to the shape of the LED die 104.
• a combination of vacuum and heat may be used to laminate the first phosphor layer 202 to the LED die 104.
• the first phosphor layer 202 need not be in the form of a laminate sheet; it may be applied in liquid or paste form via spray coating, molding, screen printing, and so on.
• the first phosphor layer 202 may be conformally formed on the LED die 104 using a conventional deposition process such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), evaporation, sputtering, chemical solution deposition, spin-on deposition, or other like processes.
• CVD chemical vapor deposition
• PECVD plasma-enhanced CVD
• ALD atomic layer deposition
• evaporation evaporation
• sputtering chemical solution deposition
• spin-on deposition spin-on deposition, or other like processes.
• the first phosphor layer 202 may include a wavelength converting material which may be, for example, conventional phosphors, organic phosphors, quantum dots, organic semiconductors, II-VI or III-V semiconductors, II-VI or III-V semiconductor quantum dots or nanocrystals, dyes, polymers, or other materials that luminesce.
• the first phosphor layer 202 may include a transparent material such as silicone that is mixed with the wavelength converting material.
• the wavelength converting material may absorb light emitted by the LED die 104 and may emit light of one or more different wavelengths. Unconverted light emitted by the LED die 104 may be part of the final spectrum of fight extracted from the structure, though it need not be.
• the LED die 104 may be a blue-emitting LED with a peak emission wavelength of L pk D.
• the first phosphor layer 202 may comprise a yellow- emitting wavelength converting material, a green-emitting wavelength converting material, and a red-emitting wavelength converting material that have a combined peak emission wavelength of L pk l.
• the first phosphor layer 202 may comprise one or more phosphor powders in silicone.
• the first phosphor layer 202 may comprise GaLuAG, SCASN, and CASN.
• the mass ratio of materials in the first phosphor layer 202 may be approximately 20% SCASN : 80% CASN.
• the ratio of GaLuAG to total red mass in the first phosphor layer 202 may be approximately 8.47.
• the first phosphor layer 202 may comprise a mixture of a green-emitting wavelength converting material and a red-emitting wavelength converting material.
• the green-emitting wavelength converting material may include garnets activated with cerium having a chemical composition of (Y,Gd,Lu)3(Al,Ga)50i2:Ce.
• the green-emitting wavelength converting material may include silicates and oxynitrides, such as SiAlON, activated with europium.
• the red-emitting wavelength converting material may include nitrides, such as CASN, SCASN, and BSSN, activated with europium, and quantum dots.
• the first phosphor layer 202 may comprise a mixture of green-emitting wavelength materials and red-emitting wavelength converting materials.
• the green-emitting wavelength converting material may include GaLuAG and GaYAG.
• the red-emitting wavelength converting materials may include SCASN and CASN where the mass ratio of SCASN to CASN is approximately 20:80.
• the ratio of the total mass of green-emitting wavelength converting materials to the total mass of red-emitting wavelength converting materials is approximately 8.47 and may range from 5 to 10.
• FIG. 3 a cross section view illustrating forming a second phosphor layer 302 on the first phosphor layer 202 to form an LED device 300 is shown.
• the second phosphor layer 302 may be applied to the top and sides of the first phosphor layer 202.
• the second phosphor layer 302 may be formed using any of the techniques describe above with reference to the formation of the first phosphor layer 202.
• the second phosphor layer 302 may have a thickness ranging from approximately IOmhi to approximately 150pm.
• the second phosphor layer 302 may include a wavelength converting material which may be, for example, conventional phosphors, organic phosphors, quantum dots, organic semiconductors, II -VI or III-V semiconductors, II-VI or III-V semiconductor quantum dots or nanocrystals, dyes, polymers, or other materials that luminesce.
• the second phosphor layer 302 may include a transparent material such as silicone that is mixed with the wavelength converting material.
• the wavelength converting material may absorb hght emitted by the LED die 104 and/or the first phosphor layer 202 and may emit light of one or more different wavelengths. Unconverted light emitted by the LED die 104 and/ or the first phosphor layer 202 may be part of the final spectrum of light extracted from the structure, though it need not be.
• the second phosphor layer 302 may comprise one or more phosphor materials having a peak emission wavelength L pk 2 that is between L pk D and L pk l (i.e., L pk D ⁇ L pk 2 ⁇ L pk l).
• the peak emission wavelength L pk 2 may be approximately lOOnm greater than L pk D and approximately lOOnm less than L pk l (i.e., L pk D + lOOnm ⁇ L pk 2 ⁇ L pk l - lOOnm).
• the peak emission wavelength L pk 2 may be approximately 50nm greater than L pk D and approximately 50nm less than L pk l (i.e., L pk D + 50nm ⁇ L pk 2 ⁇ L pk l - 50nm).
• the peak emission wavelength L pk 2 may be approximately lOnm greater than L pk D and approximately lOnm less than L pk l (i.e., L pk D + lOnm ⁇ L pk 2 ⁇ L pk l - lOnm).
• This range of L pk 2 may be preferable when the first phosphor layer 202 comprises a mixture of green-emitting wavelength converting material (green) and red-emitting wavelength converting material (red) with a mass ratio of greemred > 1.
• the peak emission wavelength of the second phosphor layer is approximately 460nm.
• the peak emission wavelength of the second phosphor layer may be approximately lOnm, 20nm, 30nm, or 40 nm greater than L pk D.
• the peak emission wavelength of the second phosphor layer may be approximately 10-20 nm longer than L pk D.
• L pk 2 may be approximately 10-30 nm longer than L pk D.
• L pk 2 may be approximately 20-40 nm longer than L pk D.
• L pk 2 is within 440nm to 490nm, more preferably within 450nm to 470nm, and most preferably within 455nm to 465nm.
• the second phosphor layer 302 may comprise SreMgSLOsiEu powder in silicone.
• the mass phosphor of the second phosphor layer 302 to the mass silicone may be equal to 1.
• FIG. 4 a cross section view illustrating optionally forming a lens 402 around the LED device 300 is shown.
• the lens 402 may be in contact with the substrate 102 and the second phosphor layer 302.
• the lens 402 may extend out laterally beyond the LED device 300.
• the lens 402 may comprise a transparent material to improve the extraction of hght from the LED device 300.
• the lens 402 may be formed using conventional deposition techniques.
• the lens 402 may comprise one or more of the following: PMMA, polycarbonate, silicone, HRPC. One or more portions of the lens may be aluminum coated.
• FIG. 5 a cross-section view illustrating optionally removing portions of the first phosphor layer 202 and the second phosphor layer 302 from the LED device 300 shown in FIG. 3.
• the portions of the first the first phosphor layer 202 and the second phosphor layer 302 may be removed using a conventional etching or blasting process.
• the portions of the first the first phosphor layer 202 and the second phosphor layer 302 may be removed using reactive ion etching (RIE), plasma etching, or a selective etching process.
• RIE reactive ion etching
• the remaining portion of the first phosphor layer 202 may have sidewalls 504 that are substantially flush with sidewalls 502 of the LED die 104.
• the remaining portion of the second phosphor layer 302 may have sidewalls 506 that are substantially flush with the sidewalls 502 of the LED die 104.
• FIG. 6 a cross-section view illustrating forming a reflective coating 602 on sides of the LED die 104, the remaining portion of the first phosphor layer 202, and the remaining portion of the second phosphor layer 302 to form an LED device 600.
• the reflective coating 602 may be formed using a conventional deposition process.
• the reflective coating 602 may be a sheet placed on the sides of the LED die 104 and the remaining portions of the first phosphor layer 202 and the second phosphor layer 302 and then processed to adhere to the LED die 104 and the remaining portions of the first phosphor layer 202 and the second phosphor layer 302.
• a combination of vacuum and heat may be used to laminate the reflective coating 602 to the LED die 104 and the remaining portions of the first phosphor layer 202 and the second phosphor layer 302.
• the reflective coating 602 need not be in the form of a laminate sheet; it may be applied in hquid or paste form via spray coating, molding, screen printing, dispensing, and so on.
• the first reflective coating 602 may be formed on the substrate 102 adjacent to the LED die 104 using a conventional deposition process such as CVD, PECVD, ALD, evaporation, sputtering, chemical solution deposition, spin- on deposition, or other like processes.
• the reflective coating 602 may comprise a metal, such as Ti, Au, Ag, or the like.
• the reflective coating 602 may comprise T1O2 powder in a silicone matrix.
• the reflective coating 602 may have an upper surface that is substantially flush with an upper surface of the remaining portion of the second phosphor layer 302.
• FIG. 7 a cross section view illustrating optionally forming a lens 702 around the LED device 600 is shown.
• the lens 702 may be in contact with the substrate 102, the reflective coating 602, and the second phosphor layer 302.
• the lens 702 may extend out laterally beyond the LED device 600.
• the lens 702 may comprise a transparent material to improve the extraction of light from the LED device 600.
• the lens 702 may be formed using conventional deposition techniques.
• the lens 702 may comprise one or more of the following: PMMA, polycarbonate, silicone, HRPC. One or more portions of the lens may be aluminum coated.
• FIG. 8 a chart illustrating a first emission spectrum 802 of the LED die 104 coated with only the first phosphor layer 202 and a second emission spectrum 804 of the LED die 104 coated with both the first phosphor layer 202 and the second phosphor layer 302 is shown.
• the first emission spectrum 802 and the second emission spectrum 804 may show the same LED wavelength and same color coordinates.
• the first phosphor layer 202 for used to generate the first emission spectrum 802 and the first phosphor layer 202 used to generate second emission spectrum 804 may be composed of the same phosphor materials. However, the specific phosphor concentrations in each first phosphor layer 202 may be varied to produce the same color point.
• the application of the second phosphor layer 302 may change the emission of the first phosphor layer 202 due to reflection of light which may be absorbed and converted by the first phosphor layer 202.
• the local minimum in the SPD following the blue emission peak of the LED die 104 at approximately 470 nm with both phosphor layers may be increased to as compared with only the first phosphor layer 202. This may be seen in Table 1 below.
• the coloring rendering index CRI(Ra) for the SPD of the LED die 104 with both phosphor layers increases to a CRI(Ra) of 94.2 as compared to a CRI(Ra) of 91.4 for the LED die 104 with only the first phosphor layer 202.
• the local minimum in the SPD following the blue emission peak of the LED die 104 with both phosphor layers may increase to 48% of LED peak as compared to 38.2% of LED peak height with the LED die 104 with only the first phosphor layer 202.
• the second phosphor layer 302 may comprise one or more phosphor materials having a peak emission wavelength L pk 2 that is between L pk D of the LED die 104 and L pk l of the first phosphor layer 202 (i.e., L pk D ⁇ L pk 2 ⁇ L pk l).
• L pk 2 is approximately 460nm or L pk D + 20nm.
• L pk 2 may also be approximately L pk D + lOnm.
• Examples of computer- readable storage media include, but are not limited to, a read only memory (ROM), a random access memory (RAM), a register, cache memory, semiconductor memory devices, magnetic media such as internal hard disks and removable disks, magneto-optical media, and optical media such as CD-ROM disks, and digital versatile disks (DVDs).
• ROM read only memory
• RAM random access memory
• register cache memory
• semiconductor memory devices magnetic media such as internal hard disks and removable disks, magneto-optical media, and optical media such as CD-ROM disks, and digital versatile disks (DVDs).

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• 2019
  • 2019-08-28 CN CN201980071816.4A patent/CN112913037A/zh active Pending
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