WO2020042136A1

WO2020042136A1 - Temperature sensor and chip

Info

Publication number: WO2020042136A1
Application number: PCT/CN2018/103460
Authority: WO
Inventors: 郭雅娣; 牛奕蒲
Original assignee: 华为技术有限公司
Priority date: 2018-08-31
Filing date: 2018-08-31
Publication date: 2020-03-05
Also published as: CN112020634A

Abstract

Provided by the present application are a temperature sensor and a chip. The temperature sensor is applied to the chip and comprises: a temperature pulse converter, comprising a growing metal wire and used for generating pulse signals having different pulse widths according to different temperatures under the action of the metal wire; and a calculator, used for determining the pulse width of the pulse signal. In the present solution, the temperature sensor detects temperature by means of the growing metal wire. Since the metal wire may be easily integrated into a subsystem because of the small volume thereof, the temperature of the subsystem may be accurately reflected.

Description

Temperature sensor and chip

Technical field

The present invention relates to the field of chip technology, and in particular, to a temperature sensor and a chip.

Background technique

The chip is the soul of the entire motherboard. The performance of the chip determines the performance of the entire motherboard. With the rapid development of computer technology, computer engineers are constantly trying to reduce the size of the chip and obtain higher performance. Specifically, modern chip design is moving towards setting the gaps between the chip's subsystems to the sub-micron level (0.8-0.35um), deep sub-micron level (0.25-0.18um) or even nanometer level (0.05um and below). On the 7nm prototype chip has been successfully developed. As the degree of integration of chips continues to increase, the amount of heat generated by a chip's unit area also continues to increase. If the heat problem of the chip cannot be solved well, the chip will not perform to its maximum performance, affecting the reliability of the chip, and even the chip may be burned by high temperature, resulting in unpredictable consequences.

How to do a good job of chip temperature detection is an unsolved problem.

Summary of the Invention

The embodiments of the present application provide a temperature sensor and a chip, which can be integrated inside the subsystem and accurately reflect the temperature of the subsystem.

In a first aspect, a temperature sensor is provided for use in a chip, including:

The temperature pulse converter includes a growth metal wire for generating pulse signals with different pulse widths according to different temperatures under the action of the growth metal wire;

A counter for determining a pulse width of the pulse signal.

With reference to the first aspect, in a first possible implementation manner, the structure of the growing metal wire is an “S” type structure or a “back” type structure.

With reference to the first aspect, in a second possible implementation manner, the temperature pulse converter further includes an inverting device connected in series with an odd number of stages, wherein an input terminal of the inverting device connected in series with the odd numbered stage is connected to the growth metal A first end of the wire, and an output end of the odd-numbered series-connected inverting device is connected to a second end of the growth metal wire;

The temperature pulse converter is specifically configured to generate self-oscillation by a trigger signal under the common action of the growth metal wire and the odd-numbered series-connected inverting devices, thereby generating pulse signals with different pulse widths according to different temperatures.

With reference to the second possible implementation manner of the first aspect, in a third possible implementation manner, the odd-numbered series-connected inverting device includes an inverter, a multi-input NAND gate, and a multi-input NOR gate. One or more.

With reference to the first aspect, in a fourth possible implementation manner, the temperature pulse converter further includes:

A first inverting device, configured to invert an input periodic signal to obtain a first inverted signal;

The growth metal wire, and a first end of the growth metal wire is connected to an output terminal of the first inversion device, and is configured to delay the first inversion signal, thereby obtaining a delayed first Inverted signal

A second inverting device, configured to invert the input periodic signal to obtain a second inverted signal;

An XOR gate, a first input terminal of the XOR gate is connected to a second terminal of the growth metal wire, a second input terminal of the XOR gate is connected to a second terminal of the second inverter device, It is used to perform an exclusive-OR operation on the delayed first inverted signal and the second inverted signal, thereby generating pulse signals with different pulse widths according to different temperatures.

With reference to the first aspect, in a fifth possible implementation manner, a power supply source of the temperature sensor and a power supply source of a subsystem of the chip are a same power supply source.

With reference to the first aspect, in a sixth possible implementation manner, the length of the growth metal wire is greater than 3 mm and less than 10 mm.

In a second aspect, a chip is provided, including: a power supply, a subsystem, and a temperature sensor, wherein the power supply supplies power to the subsystem and the temperature sensor, and the temperature sensor includes:

A counter for determining a pulse width of the pulse signal.

With reference to the second aspect, in a first possible implementation manner, the structure of the growing metal wire is an “S” type structure or a “back” type structure.

With reference to the second aspect, in a second possible implementation manner, the temperature pulse converter further includes an inverting device connected in series with an odd number of stages, wherein an input terminal of the inverting device connected in series with the odd numbered stage is connected to the growth metal A first end of the wire, and an output end of the odd-numbered series-connected inverting device is connected to a second end of the growth metal wire;

With reference to the second possible implementation manner of the second aspect, in a third possible implementation manner, the inverting devices connected in series in odd-numbered stages include an inverter, a multi-input NAND gate, and a multi-input NOR gate. One or more.

With reference to the second aspect, in a fourth possible implementation manner, the temperature pulse converter further includes:

The growth metal wire, and a first end of the growth metal wire is connected to an output terminal of the first inversion device, and is configured to delay the first inversion signal, thereby obtaining a Inverted signal

With reference to the second aspect, in a fifth possible implementation manner, the temperature sensor is disposed on the subsystem.

With reference to the second aspect, in a sixth possible implementation manner, the length of the growth metal wire is greater than 3 mm and less than 10 mm.

In the above solution, the temperature sensor detects the temperature through a growing metal wire. Since the metal wire is relatively small, it can be easily integrated into the subsystem, so it can accurately reflect the temperature of the subsystem.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly explain the technical solutions in the embodiments of the present invention or the background art, the drawings that are needed in the embodiments of the present invention or the background art will be described below.

FIG. 1 is a schematic structural diagram of a system-level chip according to an embodiment of the present application; FIG.

2 is a schematic structural diagram of an analog temperature sensor provided in the prior art;

3 is a schematic structural diagram of a temperature sensor according to an embodiment of the present application;

4A-4C are schematic structural diagrams of several oscillators provided by embodiments of the present application;

5A and 5B are schematic structural diagrams of several types of growth metal wires provided by embodiments of the present application;

6A-6C are schematic structural diagrams of temperature pulse converters obtained by combining several oscillators and growing metal wires provided in the embodiments of the present application;

7 is a comparison diagram of an output waveform of an oscillator, an output waveform of an oscillation type temperature pulse converter at a low temperature, and an output waveform of an oscillation type temperature pulse converter at a high temperature according to an embodiment of the present application;

8 is a schematic structural diagram of an arithmetic circuit according to an embodiment of the present application;

FIG. 9 is a schematic structural diagram of a temperature pulse converter obtained by combining an arithmetic circuit and a growing metal wire according to an embodiment of the present application; FIG.

10 is a comparison diagram of waveforms at various points of an arithmetic circuit, a non-oscillating temperature pulse converter at a low temperature, and a non-oscillating temperature pulse converter at a high temperature according to an embodiment of the present application;

FIG. 11 is a schematic diagram of a layout comparison of a chip using an analog temperature sensor and a temperature sensor according to an embodiment of the present application.

detailed description

A system-on-a-chip (SOC) is a system or product formed by combining multiple integrated circuits with specific functions on a single chip. Specifically, the SOC can integrate a processor (including a CPU, a DSP), a memory, various interface control modules, various interconnection buses, and the like on the same chip, thereby reducing the area of the integrated circuit and improving the speed of data transmission. And provides utilization of resources. As shown in Figure 1, a system-on-chip usually includes multiple subsystems with high energy consumption, such as a central processing unit (CPU) subsystem, a graphics processing unit (GPU), and a multimedia subsystem. System and more. Among them, the CPU subsystem usually includes a computing core and a control core for analyzing computer instructions and processing data in computer software. GPU subsystems are often called display cores, vision processors, display chips, and so on, and are specifically used to handle image computing tasks. The media subsystem can be used to implement fast compression, decompression, and playback processing of audio and video signals. It should be understood that the above-mentioned subsystems are merely examples and should not be construed specifically.

The main heat of the system-level chip is generated by high-energy-consumption subsystems, such as the CPU subsystem, GPU subsystem, and media subsystem. In other words, the CPU subsystem, GPU subsystem, and media subsystem are the key heating components of the system-level chip to generate heat. In particular, when the CPU subsystem, GPU subsystem, and media subsystem are overloaded, the CPU subsystem, GPU subsystem, and media subsystem may generate a large amount of heat due to overloaded work, resulting in CPU subsystem, The GPU subsystem and the media subsystem have failed. Therefore, it is necessary to focus on monitoring the CPU subsystem, GPU subsystem, and media subsystem.

The prior art provides an analog temperature sensor for temperature monitoring. As shown in FIG. 2, the analog temperature sensor includes a processor, an analog-to-digital converter (ADC), and a bipolar junction transistor (BJT). among them,

The bipolar junction transistor is placed near a subsystem to collect the temperature of the subsystem and convert the collected temperature into an analog electrical signal;

The analog-to-digital converter is connected to the bipolar junction transistor through a metal wire, and is configured to convert an analog electrical signal into a digital electrical signal;

The processor is configured to determine a temperature of the subsystem according to the digital electric signal.

However, the area of this analog temperature sensor is relatively large and cannot be integrated into the subsystem, which cannot accurately reflect the temperature of the subsystem.

In order to solve the above problem, the present application provides a temperature sensor and a chip, which can be integrated inside the subsystem to accurately reflect the temperature of the subsystem.

As shown in FIG. 3, the present application provides a schematic structural diagram of a temperature sensor. As shown in FIG. 3, the temperature sensor of the present application includes a temperature pulse converter 110 and a counter 120.

The temperature pulse converter 110 includes a growth metal wire for generating pulse signals with different pulse widths according to different temperatures under the action of the growth metal wire;

The counter 120 is configured to determine a pulse width of the pulse signal.

The temperature pulse converter 110 includes at least two types of oscillation type and non-oscillation type. Among them, the oscillation type temperature pulse converter is mainly composed of an oscillator, and the non-oscillation type temperature pulse converter is mainly composed of an arithmetic circuit. Each of them will be described in detail below.

Oscillating temperature pulse converter

The oscillating temperature pulse converter is formed by adding growing metal wires on the basis of the oscillator. In the following, the oscillator, the addition of the growth metal wire, and the combination of the oscillator and the growth metal wire will be described in detail.

4A-4C illustrate structural diagrams of several oscillators used to form an oscillating temperature pulse converter 110. Here, the oscillator used to configure the temperature pulse converter 110 may be an oscillator that is easily integrated in a chip, which is not specifically limited herein.

As shown in FIG. 4A, the oscillator constituting the temperature pulse converter 110 may be a non-voltage controlled ring oscillator. Among them, the non-voltage-controlled ring oscillator may be a ring circuit formed by connecting odd-numbered stages of inverting devices end to end. Odd numbers refer to

levels

1, 3, 5 and so on. The inverting device may be one or more of an inverter, a NAND gate, or a NOR gate. Here, by connecting the inputs of the NAND gate or the NOR gate together, the function equivalent to an inverter can be achieved. By changing the number of inverting devices of the non-voltage controlled ring oscillator and the delay time of the inverting devices, the oscillation frequency of the non-voltage controlled ring oscillator can be changed.

As shown in FIG. 4B, the oscillator constituting the temperature pulse converter 110 may be a voltage-controlled ring oscillator. The voltage-controlled ring oscillator may be a ring circuit formed by sequentially connecting Schmitt triggers of odd stages. Here, by adjusting the input voltage of the ring oscillator controlled by the input voltage, the charging and discharging current of the voltage controlled ring oscillator can be changed, and the charging and discharging time can be changed, thereby changing the oscillation frequency of the voltage controlled ring oscillator.

As shown in FIG. 4C, the oscillator constituting the temperature pulse converter 110 may be a resistance-capacitance (RC) ring oscillator. Among them, the RC ring oscillator may be a ring circuit formed by connecting the inverting devices of odd-numbered stages end to end. Then, an RC delay link composed of a resistor and a capacitor is added to the ring circuit to obtain an RC ring oscillator with a lower oscillation frequency. . For example, taking a ring oscillator formed by connecting three stages of inverters as an example, a resistor can be added between the input of the inverter of the first stage and the output of the inverter of the second stage. A capacitor is added to the output of the inverter of the first stage, and the capacitor is grounded to obtain an RC ring oscillator with a lower oscillation frequency. By changing the resistance of the resistor and the capacitance of the capacitor, you can change the oscillation frequency of the RC ring oscillator.

It should be understood that the oscillator constituting the temperature pulse converter 110 is not limited to the above examples, for example, an inductor-capacitor (LC) oscillator circuit, a resistor-capacitor (RC) oscillator circuit, a resistor-inductor-capacitor (RLC) oscillator circuit, etc. Not specifically limited.

5A and 5B are schematic structural diagrams of several types of growing metal wires. Here, the growing metal wire may adopt a structure in which the length of the metal wire is relatively long and the area occupied is relatively small, which is not specifically limited herein.

As shown in FIG. 5A, the structure of the growing metal wire may be an “S” type structure. In practical applications, the "S" height, width, wire width, and number of growing metal wires can be set according to actual needs. In addition, the heights of the plurality of "S" characters in the growth metal wire may be exactly the same, partially the same, or completely different. Similarly, the widths of the plurality of "S" characters in the growth metal wire may be exactly the same. , Partially the same, or completely different. The above examples are only for analyzing the embodiments of the present application, and should not constitute a specific limitation.

As shown in FIG. 5B, the structure of the growth metal wire may be a "back" type structure. In practical applications, the perimeter and number of turns of the "back" character of the growth metal wire can be set according to actual needs. In addition, the spacing between multiple "back" characters in the growth metal wire may be exactly the same, partially the same, and completely different. The above examples are only for analyzing the embodiments of the present application, and should not constitute a specific limitation.

Theoretically, the longer the length of the growing metal wire, the better the temperature detection effect. However, in practical applications, considering the effect of the temperature detection of the growing metal wire and the amount of wiring resources occupied, the length of the growing metal wire can be set 3 mm to 10 mm.

It should be understood that the above-mentioned structure of the growth metal wire is merely for illustration. In other examples, the growth metal wire may also have other shapes, for example, the combination of the above-mentioned "S" type structure and "back" type structure, etc. Moreover, the above examples are all taken as examples of regular shapes. In practical applications, the growth of metal wires can also be formed irregularly, which is not specifically limited here.

6A-6C illustrate a combination of several oscillators and adding growth metal wires.

As shown in FIG. 6A, corresponding to the non-voltage-controlled ring oscillator shown in FIG. 4A, an “S” type structure may be added between the output terminal and the input terminal of the non-voltage-controlled ring oscillator shown in FIG. 4A. Increase the metal wire to obtain the oscillating temperature pulse converter shown in Figure 6A, or you can add a "back" type between the output and input of the non-voltage controlled ring oscillator shown in Figure 4A The structure grows a metal wire to obtain an oscillating temperature pulse converter as shown below in FIG. 6A.

As shown in FIG. 6B, corresponding to the voltage-controlled ring oscillator shown in FIG. 4B, an “S” type growth metal can be added between the output terminal and the input terminal of the voltage-controlled ring oscillator shown in FIG. 4B. Wire, so as to obtain the oscillating temperature pulse converter as shown in the upper part of FIG. 6B, or the growth of the “back” type structure between the output end and the input end of the voltage-controlled ring oscillator shown in FIG. 4B Metal wires, so as to obtain an oscillating temperature pulse converter as shown in the lower part of FIG. 6B.

As shown in FIG. 6C, corresponding to the RC ring oscillator shown in FIG. 4C, an “S” -type growth metal wire can be added between the output terminal and the input terminal of the RC ring oscillator shown in FIG. 4C, thereby obtaining As shown in the upper part of the oscillating temperature pulse converter shown in FIG. 6C, or a metal wire with a “back” type structure can be added between the output terminal and the input terminal of the RC ring oscillator shown in FIG. 4C, so as to obtain An oscillating temperature pulse converter shown below in FIG. 6C.

In the above example, the growth metal wire is provided between the output end and the input end of the ring oscillator. However, in practical applications, the growth metal wire can also be provided in other parts of the ring oscillator. For example, it can be provided in Between the first inverter and the second inverter of the non-voltage controlled ring oscillator, or between the second inverter and the third inverter of the non-voltage controlled ring oscillator, etc. It is not specifically limited here.

The following will introduce the working principle of the ring oscillator and the working principle of the oscillating temperature pulse converter, so that the reader can better understand the working principle of the oscillating temperature pulse converter.

The working principle of the ring oscillator is that after the excitation signal is input at the input terminal, the ring oscillator will generate self-oscillation, and thus output a pulse signal at the output terminal. The excitation signal may be a step signal. The step signal can be generated by a crystal or a register. For example, when the register outputs "1" first and then "0", a step signal can be generated. It should be understood that the above example of the method for generating a step signal is only used to describe the embodiment of the present application, and should not constitute a specific limitation.

The working principle of the oscillating temperature pulse converter is: after the excitation signal is input at the input end, the oscillating temperature pulse converter will generate self-oscillation under the joint action of the metal wire and the ring oscillator, thereby outputting a pulse at the output end signal. In addition, when the ambient temperature is different, the pulse width of the pulse signal generated by the oscillating temperature pulse converter will also be different. For example, when the ambient temperature is relatively high, the pulse width of the pulse signal generated by the oscillating temperature pulse converter is relatively wide. When the ambient temperature is relatively low, the pulse width of the pulse signal generated by the oscillating temperature pulse converter is compared. narrow. It should be understood that the above examples are only for illustration, and should not constitute a specific limitation.

As shown in Figure 7, comparing the waveform of the oscillator output, the waveform of the temperature pulse converter at the low temperature and the waveform of the temperature pulse converter at the high temperature, it can be seen that: The pulse width of the waveform is the smallest, the pulse width of the waveform output by the oscillating temperature pulse converter at the low temperature is centered, and the waveform of the waveform output by the oscillating temperature pulse converter at the high temperature is the largest. Therefore, by counting the number of pulses per unit time of the waveform output by the oscillating temperature pulse converter, the temperature of the current environment can be determined.

Non-oscillating temperature pulse converter

The non-oscillating temperature pulse converter is formed by adding growing metal wires on the basis of the arithmetic circuit. In the following, the operation circuit, the addition of the growth metal wire, and the combination of the operation circuit and the addition of the growth metal wire will be described in detail.

As shown in FIG. 8, the operation circuit may include a first inverter, a second inverter, and an XOR gate. The input terminal of the first inverter and the input terminal of the second inverter are connected together. An output terminal of an inverter is connected to a first input terminal of the XOR gate, and an output terminal of a second inverter is connected to a second input terminal of the XOR gate. In the embodiment shown in FIG. 8, the role of the first inverter and the second inverter is to improve the driving capability. In practical applications, more inverters can also be used. An inverter is connected in series behind the inverter and an inverter is connected in series after the second inverter, which is not specifically limited here.

As shown in FIG. 9, corresponding to the operation circuit shown in FIG. 8, an “S” type may be added between the output terminal of the first inverter of the operation circuit shown in FIG. 8 and the first input terminal of the XOR gate. The structure grows a metal wire, thereby obtaining a non-oscillating temperature pulse converter as shown in FIG. 9. It should be understood that the growth metal wires of the above-mentioned "S" type structure may also be added in other parts of the arithmetic circuit, for example, the common terminal of the first inverter and the second inverter and the input terminal of the first inverter may be added. Increasing metal wires with "S" type structure and the like are not specifically limited here.

The following will introduce the working principle of the arithmetic circuit and the working principle of the non-oscillating temperature pulse converter, so that the reader can better understand the working principle of the non-oscillating temperature pulse converter.

The operating principle of the arithmetic circuit is: input the original pulse signal at the input terminal. On the one hand, the original pulse signal is inverted by the first inverter, and then input to the first input terminal of the XOR gate. The signal is inverted by a second inverter, and then input to a second input terminal of the XOR gate. An XOR operation is performed on a signal input from a first input terminal of the XOR gate and a signal input from a second input terminal of the XOR gate to obtain an operation result. The original pulse signal can be generated by a pulse generator or a register. For example, the register outputs "1" first, then "0", then "1", then "0", and so on, to generate a step signal. It should be understood that, the above example of the method for generating the original pulse signal is only used to describe the embodiment of the present application, and should not constitute a specific limitation.

The working principle of the non-oscillating temperature pulse converter is: input the original pulse signal at the input end. On the one hand, the original pulse signal is inverted by the first inverter, and then it is delayed by growing a metal wire, and then input to The first input terminal of the XOR gate, on the other hand, the original pulse signal is inverted by a second inverter, and then input to the second input terminal of the XOR gate. An XOR operation is performed on a signal input from a first input terminal of the XOR gate and a signal input from a second input terminal of the XOR gate to obtain an operation result. Moreover, when the ambient temperature is different, the delay time for growing the metal wire is also different, so the obtained calculation results are also different.

As shown in FIG. 10, the waveforms at various points of the arithmetic circuit, the non-oscillating temperature pulse converter at low temperature, and the non-oscillating temperature pulse converter at high temperature are compared: the calculation result output by the arithmetic circuit is low On the horizontal line, the number of pulses output by the non-oscillating temperature pulse converter at low temperatures is small, and the number of pulses output by the non-oscillating temperature pulse converters at high temperatures is large. Therefore, by counting the number of pulses per unit time of the waveform output by the non-oscillating temperature pulse converter, the temperature of the current environment can be determined.

Referring to FIG. 11, FIG. 11 is a schematic diagram of a layout comparison of a chip using an analog temperature sensor and a temperature sensor according to an embodiment of the present application. As shown on the left of Figure 11, when the chip uses an analog temperature sensor for temperature measurement, the analog temperature sensor can only be set outside the subsystem of the chip; as shown on the right of Figure 11, when the chip uses the temperature sensor of this application for temperature measurement At this time, the temperature sensor can be set in the subsystem of the chip. Therefore, the temperature sensor using the present application can be closer to the subsystem, and the hot spot temperature of the subsystem of the chip can be measured more accurately.

The present application also provides a chip, which includes a power supply, a subsystem, and a temperature sensor. The power supply provides power to the subsystem and the temperature sensor, and the temperature sensor may be any of the foregoing. Temperature Sensor. For the sake of simplicity, please refer to the corresponding drawings and related statements for details.

Obviously, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Claims

A temperature sensor is characterized in that it is applied to a chip and includes:

The temperature pulse converter includes a growth metal wire for generating pulse signals with different pulse widths according to different temperatures under the action of the growth metal wire;

A counter for determining a pulse width of the pulse signal.
The sensor according to claim 1, wherein the structure of the growing metal wire is an "S" type structure or a "back" type structure.
The sensor according to claim 1 or 2, wherein the temperature pulse converter further comprises an inverting device connected in series with an odd number of stages, wherein an input terminal of the inverting device connected in series with the odd numbered stage is connected to the growth metal A first end of the wire, and an output end of the odd-numbered series-connected inverting device is connected to a second end of the growth metal wire;

The temperature pulse converter is specifically configured to generate self-oscillation by a trigger signal under the common action of the growth metal wire and the odd-numbered series-connected inverting devices, thereby generating pulse signals with different pulse widths according to different temperatures.
The sensor according to claim 3, wherein the odd-numbered series inverter devices include one or more of an inverter, a multi-input NAND gate, and a multi-input NOR gate.
The sensor according to claim 1 or 2, wherein the temperature pulse converter further comprises:

A first inverting device, configured to invert an input periodic signal to obtain a first inverted signal;

The growth metal wire, and a first end of the growth metal wire is connected to an output terminal of the first inversion device, and is configured to delay the first inversion signal, thereby obtaining a delayed first Inverted signal

A second inverting device, configured to invert the input periodic signal to obtain a second inverted signal;

An XOR gate, a first input terminal of the XOR gate is connected to a second terminal of the growth metal wire, a second input terminal of the XOR gate is connected to a second terminal of the second inverter device, It is used to perform an exclusive-OR operation on the delayed first inverted signal and the second inverted signal, thereby generating pulse signals with different pulse widths according to different temperatures.
The sensor according to any one of claims 1-5, wherein a power supply source of the temperature sensor and a power supply source of a subsystem of the chip are a same power supply source.
The sensor according to any one of claims 1 to 5, wherein the length of the growing metal wire is greater than 3 mm and less than 10 mm.
A chip is characterized by comprising: a power supply source, a subsystem, and a temperature sensor, wherein the power supply source supplies power to the subsystem and the temperature sensor, and the temperature sensor includes:

The temperature pulse converter includes a growth metal wire for generating pulse signals with different pulse widths according to different temperatures under the action of the growth metal wire;

A counter for determining a pulse width of the pulse signal.
The chip according to claim 8, wherein the structure of the growth metal wire is an "S" type structure or a "back" type structure.
The chip according to claim 8 or 9, wherein the temperature pulse converter further comprises an inverting device connected in series with an odd number of stages, wherein an input terminal of the inverting device connected in series with the odd numbered stage is connected to the growth metal A first end of the wire, and an output end of the odd-numbered series-connected inverting device is connected to a second end of the growth metal wire;

The temperature pulse converter is specifically configured to generate self-oscillation by a trigger signal under the common action of the growth metal wire and the odd-numbered series-connected inverting devices, thereby generating pulse signals with different pulse widths according to different temperatures.
The chip according to claim 10, wherein the odd-numbered series-connected inverting device comprises one or more of an inverter, a multi-input NAND gate, and a multi-input NOR gate.
The chip according to claim 8 or 9, wherein the temperature pulse converter further comprises:

A first inverting device, configured to invert an input periodic signal to obtain a first inverted signal;

The growth metal wire, and a first end of the growth metal wire is connected to an output terminal of the first inversion device, and is configured to delay the first inversion signal, thereby obtaining a delayed first Inverted signal

A second inverting device, configured to invert the input periodic signal to obtain a second inverted signal;

An XOR gate, a first input terminal of the XOR gate is connected to a second terminal of the growth metal wire, a second input terminal of the XOR gate is connected to a second terminal of the second inverter device, It is used to perform an exclusive-OR operation on the delayed first inverted signal and the second inverted signal, thereby generating pulse signals with different pulse widths according to different temperatures.
The chip according to any one of claims 8-12, wherein the temperature sensor is disposed on the subsystem.
The chip according to any one of claims 1-5, wherein the length of the growth metal wire is greater than 3 mm and less than 10 mm.