CN102175337A - Temperature sensor - Google Patents
Temperature sensor Download PDFInfo
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- CN102175337A CN102175337A CN 201110043008 CN201110043008A CN102175337A CN 102175337 A CN102175337 A CN 102175337A CN 201110043008 CN201110043008 CN 201110043008 CN 201110043008 A CN201110043008 A CN 201110043008A CN 102175337 A CN102175337 A CN 102175337A
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- temperature
- temperature sensor
- frequency divider
- clock signal
- pulse
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Abstract
The invention discloses a temperature sensor, aiming at providing a temperature sensor with a lower working voltage and a high resolution ratio. The temperature sensor comprises a frequency divider, a temperature pulse generating circuit and a temperature measuring counter which are connected in sequence; the frequency divider is used for dividing the frequency of a reference clock signal generated by a quartz crystal oscillator; the temperature pulse generating circuit is used for generating a recurrent pulse signal the pulse width of which is influenced by the change of environmental temperature; the temperature measuring counter is used for detecting the clock number of the reference clock signal output by the quartz crystal oscillator within the pulse width output by the temperature pulse generating circuit; and the frequency divider and the temperature measuring counter are used for receiving the same reference clock signal and are controlled by the same enable signal. Compared with the prior art, the temperature sensor is suitable for the working voltage reduction caused by the progress of an integrated circuit technique, thereby meeting the requirement of an advanced integrated circuit for the low-voltage high-resolution-ratio temperature sensor.
Description
Technical field
The present invention relates to a kind of temperature sensor, particularly a kind of low-work voltage, high-resolution temperature sensor.
Background technology
Temperature sensor is the important composition parts of environmental monitoring.Traditional temperature sensor generally adopts the mode of operation of " temperature-voltage-digital-to-analog conversion ", and one of core component is an analog/digital converter, promptly usually said ADC.Along with the progress of current semiconductor technology, the operating voltage of circuit is more and more lower, and correspondingly, the full scale voltage of ADC input end is also more and more lower.If the conversion figure place of ADC is constant, operating voltage reduces, the then corresponding attenuating of voltage detecting sensitivity of ADC, the noise level of circuit reduces, these are all given under the low-work voltage condition with ADC is that the design of the temperature sensor of core has proposed new requirement, can adapt to the integrated circuit technology progress, the development trend that operating voltage reduces.
Summary of the invention
The purpose of this invention is to provide a kind of temperature sensor, the technical matters that solve is to make it have lower operating voltage, high resolution.
The present invention is by the following technical solutions: a kind of temperature sensor produces circuit and thermometric counter by frequency divider, temperature pulse and is linked in sequence and forms; Described frequency divider is used for the reference clock signal frequency division that will be produced by quartz crystal oscillator; Described temperature pulse produces circuit and is used to produce the periodic pulse signal that pulse width is influenced by variation of ambient temperature; Described thermometric counter is used to detect the clock number of the reference clock signal of being exported by quartz crystal oscillator in the pulse width of temperature pulse generation circuit output; Described frequency divider and thermometric counter receive same reference clock signal, and controlled by same enable signal.
Clock behind the frequency divider frequency division of the present invention is no more than 5Hz.
Temperature pulse of the present invention produces circuit and forms by temperature control lag line, matching delay-line, XOR gate with door, the input termination frequency divider output terminal of described temperature control lag line and matching delay-line, output terminal connects two input ends of XOR gate respectively, and the output terminal of described XOR gate and frequency divider output terminal connect two input ends with door respectively.
Temperature control lag line of the present invention is used for the sub-frequency clock signal of the frequency divider output of input that makes influenced by ambient temperature and produces the phase delay that changes with temperature linearity in lag line, and this phase delay is no more than 1/2nd of the input sub-frequency clock signal cycle.
Temperature control lag line of the present invention adopts 1 not gate+1 3.62pF electric capacity+1 not gate+1 not gate+1 not gate series connection to constitute.
Matching delay-line of the present invention is used for being subjected to variation of ambient temperature to influence fixing phase delay to the sub-frequency clock signal generation of input.
Matching delay-line of the present invention is made of 2 not gate series connection.
Frequency divider of the present invention is made of 1 20 bit synchronization binary counter.
Thermometric counter of the present invention is made of 1 24 bit synchronization binary counter.
Temperature sensor of the present invention adopts CMOS (Complementary Metal Oxide Semiconductor) technology to realize.
The present invention compared with prior art, adopt the canonical reference clock division of frequency divider with input, make the clock behind the frequency division be no more than 5Hz, temperature pulse produces circuit and produces the variable pulse width signal relevant with environment temperature then, the complete cycle issue of the input canonical reference clock of last measurement counter detected temperatures pulse width equivalence, reduce problem to adapt to the operating voltage that the integrated circuit technology progress brings, thereby satisfied the demand of advanced integrated circuit low-voltage high resolving power temperature sensor.
Description of drawings
Fig. 1 is the structured flowchart of temperature sensor of the present invention.
Fig. 2 is the workflow diagram of temperature sensor of the present invention.
Fig. 3 is the sequential chart of each main signal of temperature sensor of the present invention.
Fig. 4 is the schematic diagram that temperature pulse of the present invention produces circuit.
Fig. 5 is the relation curve of two kinds of process modeling counting output values of the embodiment of the invention and temperature.
Embodiment
Below in conjunction with drawings and Examples technical scheme of the present invention is further described.
As shown in Figure 1, temperature sensor of the present invention is linked in sequence by frequency divider 11, temperature pulse generation circuit 12 and thermometric counter 13 and forms, and frequency divider 11 and thermometric counter 13 receive same reference clock signal, and controlled by same enable signal.
Temperature pulse produces circuit 12 and is used to produce the periodic pulse signal that pulse width is influenced by variation of ambient temperature, and the input signal that temperature pulse produces circuit 12 is the clock signal behind the frequency division of frequency divider 11 outputs, is output as periodic pulse signal.
Thermometric counter 13 is used to detect the clock number of the reference clock signal of being exported by quartz crystal oscillator in the pulse width of temperature pulse generation circuit 12 outputs, count results is by the Dout signal pins output of thermometric counter 13.
As shown in Figures 2 and 3, in the time frequency divider 11 and thermometric counter 13 are carried out asynchronous reset at the significant level of enable signal, after the significant level of enable signal was removed, temperature sensor entered duty.After entering duty, frequency divider 11 at first carries out frequency division to the reference clock of input, frequency divider 11 an every high level semiperiod of output signals, thermometric pulse-generating circuit 12 and thermometric counter 13 carry out temperature detection one time, and 13 pairs of each thermo detector numerical value of thermometric counter add up.When frequency divider 11 outputs the 5th high level semiperiod signal, thermometric pulse-generating circuit 12 and thermometric counter 13 no longer carry out temperature detection.After frequency divider 11 is finished the 5th frequency-dividing clock output, promptly stop divide operation, wait for enable signal.
As shown in Figure 4, temperature pulse produces circuit 12 and forms by temperature control lag line 21, matching delay-line 22, XOR gate 23 with door 24, the sub-frequency clock signal of input termination frequency divider 11 outputs of temperature control lag line 21 and matching delay-line 22, output terminal connects two input ends of XOR gate 23 respectively, and the output terminal of XOR gate 23 and sub-frequency clock signal connect two input ends with door 24 respectively.The input end of temperature control lag line 21 receives the sub-frequency clock signal of frequency divider 11 outputs, temperature control lag line 21 sub-frequency clock signals of input that make influenced by ambient temperature produce in lag line with the phase delay of temperature near linear change, under the maximum-delay condition, need to guarantee that the phase delay that lag line produces was no more than for 1/2nd frequency-dividing clock cycles of importing simultaneously.Matching delay-line 22 is used for being subjected to variation of ambient temperature to influence less approximate fixing phase delay to the sub-frequency clock signal generation of input, and the minimum phase that makes it can produce with 21 in temperature control lag line postpones consistent.Two input ends of XOR gate 23 receive the output of temperature control lag line 21 and matching delay-line 22 respectively, its effect is the width that the phase-delay difference of temperature control lag line 21 and matching delay-line 22 is converted to the output pulse, because the phase delay temperature influence that matching delay-line 22 produces is less, so the signal pulse width of XOR gate 23 outputs reflects that mainly the phase delay of temperature control lag line 21 generations is with the variation of temperature situation.Be respectively the output signal of sub-frequency clock signal and XOR gate 23 with the input end of door 24, only the high level of frequency-dividing clock in the semiperiod by the output pulse signal of XOR gate 23 just can by with door 24, so just guaranteed that output pulse width that temperature pulse produces circuit 12 only reflects the temperature variant influence of rising edge phase delay of frequency-dividing clock.
Embodiment, temperature sensor adopt complementary metal oxide semiconductor (CMOS) CMOS (Complementary Metal Oxide Semiconductor) technology to realize that circuit accepted standard logical block storehouse is provided by Britain ARM company.Frequency divider adopts 20 binary counters to realize, when input clock was 6MHz, the input frequency-dividing clock was
, constitute by 1 20 bit synchronization binary counter, can be described as with the Verilog language;
module?count20(clk,clr,ena,cout,q);
input?clk,clr,ena;
output?[19:0]?q;
output?cout;
reg?[19:0]q;
always?@(posedge?clr?or?posedge?clk)
begin
if(clr)?q='h0000;
else?if?(ena)?q=q+1;
end
assign?cout=&q;
Endmodule
The thermometric counter is made of 1 24 bit synchronization binary counter, can describe with above-mentioned 20 binary counters similarly with the Verilog language, only needs to change 24 into and get final product the position is long.
The temperature control lag line adopts the full series system of 1 not gate+1 3.62pF electric capacity+1 not gate+1 not gate+1 not gate, constitutes a temperature variant current source mode that 3.62pF electric capacity charges is produced phase delay.
Matching delay-line adopts 2 not gate series connection, constitutes a gate delay circuit that varies with temperature less than the temperature control lag line.
Above-mentioned not gate adopts the INV1X unit in the standard logical unit storehouse.
XOR gate adopts the XOR2 unit in the standard logical unit storehouse, can be described as with the Verilog language:
module?XOR2(A,?B,?Y);
input?A,?B;
output?Y;
assign?Y=A^B;
endmodule
AND2 unit with in the door employing standard logical unit storehouse can be described as with the Verilog language:
module?AND2(A,?B,?Y);
input?A,?B;
output?Y;
assign?Y=A&B;
endmodule
Reference clock signal adopts the square-wave signal of voltage 0 ~ 1.8V, frequency 6MHz, is voltage 0 ~ 1.8V, frequency 5Hz square wave from the enable signal with door output.-40 ℃ and optimum process performance (the FF model in the HSPICE model that optimum process performance is provided by SMIC company) ,+85 ℃ of temperature and two kinds of simulated conditions of the poorest operational characteristic (the SS model in the HSPICE model that the poorest operational characteristic is provided by SMIC company) under, adopt 2005.03 editions analogue simulations of HSPICE of Synopsys company to obtain.As shown in Figure 5, be under two kinds of models from the curve of the relation of-40 ℃ ~+85 ℃ counting output values and temperature, minimum 0.037 ℃ of figure medium sensitivity.The temperature sensor operating voltage of present embodiment is 1.8V, and temperature detection is highly sensitive in 0.062 ℃, 0.1 ℃ of conversion accuracy.The temperature sensor operating voltage that the single channel temperature sensor chip AD7418 that prior art such as U.S. ADI company produce realizes is 2.7 ~ 5.5VV, 0.5 ℃ of temperature detection sensitivity, 0.25 ℃ of conversion accuracy.
Temperature sensor of the present invention has following characteristics: one, input canonical reference clock adopts the frequency signal of quartz crystal oscillator output; Two, by input frequency divider frequency division, can in 1 second, produce circuit and import a plurality of reference burst signals to temperature pulse, promptly can in 1 second, repeatedly carry out temperature sampling; Three, measurement counter can be accumulated temperature sampling result repeatedly, is equivalent to and is averaged temperature value, helps improving temperature detecting precision; Four, temperature sensor output result is " a thermometer numerical value ", need change and just can be reduced to common degree centigrade information.Because temperature sensor of the present invention adopts temperature-time conversion regime, therefore operating voltage reduces the bias current influence of temperature measurement circuit less, solved the operating voltage reduction problem that the integrated circuit technology progress brings, satisfied the demand of integrated circuit low-voltage high resolving power temperature sensor.
Claims (10)
1. temperature sensor is characterized in that: described temperature sensor produces circuit (12) and thermometric counter (13) by frequency divider (11), temperature pulse and is linked in sequence and forms; Described frequency divider (11) is used for the reference clock signal frequency division that will be produced by quartz crystal oscillator; Described temperature pulse produces circuit (12) and is used to produce the periodic pulse signal that pulse width is influenced by variation of ambient temperature; Described thermometric counter (13) is used for detecting the clock number of the reference clock signal of being exported by quartz crystal oscillator in the pulse width of temperature pulse generation circuit (12) output; Described frequency divider (11) and thermometric counter (13) receive same reference clock signal, and controlled by same enable signal.
2. temperature sensor according to claim 1 is characterized in that: the clock behind described frequency divider (11) frequency division is no more than 5Hz.
3. temperature sensor according to claim 2, it is characterized in that: described temperature pulse produces circuit (12) and forms by temperature control lag line (21), matching delay-line (22), XOR gate (23) with door (24), input termination frequency divider (11) output terminal of described temperature control lag line (21) and matching delay-line (22), output terminal connects two input ends of XOR gate (23) respectively, and the output terminal of described XOR gate (23) and frequency divider (11) output terminal connect two input ends with door (24) respectively.
4. temperature sensor according to claim 3, it is characterized in that: described temperature control lag line (21) is used for the sub-frequency clock signal of frequency divider (11) output of input that makes influenced by ambient temperature and produces the phase delay that changes with temperature linearity in lag line, and this phase delay is no more than 1/2nd of the input sub-frequency clock signal cycle.
5. temperature sensor according to claim 4 is characterized in that: described temperature control lag line (21) adopts 1 not gate+1 3.62pF electric capacity+1 not gate+1 not gate+1 not gate series connection to constitute.
6. temperature sensor according to claim 5 is characterized in that: described matching delay-line (22) is used for being subjected to variation of ambient temperature to influence fixing phase delay to the sub-frequency clock signal generation of input.
7. temperature sensor according to claim 6 is characterized in that: described matching delay-line (22) is made of 2 not gate series connection.
8. temperature sensor according to claim 7 is characterized in that: described frequency divider (11) is made of 1 20 bit synchronization binary counter.
9. temperature sensor according to claim 8 is characterized in that: described thermometric counter (13) is made of 1 24 bit synchronization binary counter.
10. temperature sensor according to claim 9 is characterized in that: described temperature sensor adopts CMOS (Complementary Metal Oxide Semiconductor) technology to realize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110043008 CN102175337B (en) | 2011-02-23 | 2011-02-23 | Temperature sensor |
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|---|---|---|---|
| CN 201110043008 CN102175337B (en) | 2011-02-23 | 2011-02-23 | Temperature sensor |
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| CN102175337A true CN102175337A (en) | 2011-09-07 |
| CN102175337B CN102175337B (en) | 2013-04-03 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106407486A (en) * | 2015-07-27 | 2017-02-15 | 深圳市中兴微电子技术有限公司 | Process deviation detection circuit and method |
| CN109115356A (en) * | 2018-07-17 | 2019-01-01 | 厦门大学 | A method of generating temperature pulse signal |
| CN110260986A (en) * | 2019-06-28 | 2019-09-20 | 上海视涯信息科技有限公司 | A kind of temperature-detecting device, method and display system |
| WO2020042136A1 (en) * | 2018-08-31 | 2020-03-05 | 华为技术有限公司 | Temperature sensor and chip |
| CN112013991A (en) * | 2020-08-10 | 2020-12-01 | 杭州电子科技大学 | Temperature measuring circuit based on standard unit |
| CN114636481A (en) * | 2022-03-18 | 2022-06-17 | 电子科技大学 | Configurable fully-integrated temperature sensor based on Cortex-M3 kernel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101210848A (en) * | 2006-12-30 | 2008-07-02 | 盛群半导体股份有限公司 | Circuit structure for automatic detection for temperature |
| US20090058543A1 (en) * | 2005-06-17 | 2009-03-05 | Renesas Technology Corp. | Temperature detecting semiconductor device |
| CN101634595A (en) * | 2009-08-20 | 2010-01-27 | 南京航空航天大学 | High-precision platinum resistor temperature measuring system and temperature measuring method based on same |
| CN101769798A (en) * | 2009-01-06 | 2010-07-07 | 比亚迪股份有限公司 | Temperature detection system |
| CN101832823A (en) * | 2009-03-13 | 2010-09-15 | 国民技术股份有限公司 | Temperature sensor |
-
2011
- 2011-02-23 CN CN 201110043008 patent/CN102175337B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090058543A1 (en) * | 2005-06-17 | 2009-03-05 | Renesas Technology Corp. | Temperature detecting semiconductor device |
| CN101210848A (en) * | 2006-12-30 | 2008-07-02 | 盛群半导体股份有限公司 | Circuit structure for automatic detection for temperature |
| CN101769798A (en) * | 2009-01-06 | 2010-07-07 | 比亚迪股份有限公司 | Temperature detection system |
| CN101832823A (en) * | 2009-03-13 | 2010-09-15 | 国民技术股份有限公司 | Temperature sensor |
| CN101634595A (en) * | 2009-08-20 | 2010-01-27 | 南京航空航天大学 | High-precision platinum resistor temperature measuring system and temperature measuring method based on same |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106407486A (en) * | 2015-07-27 | 2017-02-15 | 深圳市中兴微电子技术有限公司 | Process deviation detection circuit and method |
| CN109115356A (en) * | 2018-07-17 | 2019-01-01 | 厦门大学 | A method of generating temperature pulse signal |
| WO2020042136A1 (en) * | 2018-08-31 | 2020-03-05 | 华为技术有限公司 | Temperature sensor and chip |
| CN112020634A (en) * | 2018-08-31 | 2020-12-01 | 华为技术有限公司 | Temperature sensor and chip |
| CN110260986A (en) * | 2019-06-28 | 2019-09-20 | 上海视涯信息科技有限公司 | A kind of temperature-detecting device, method and display system |
| WO2020258419A1 (en) * | 2019-06-28 | 2020-12-30 | 上海视涯信息科技有限公司 | Temperature detecting device and method, and display system |
| CN112013991A (en) * | 2020-08-10 | 2020-12-01 | 杭州电子科技大学 | Temperature measuring circuit based on standard unit |
| CN114636481A (en) * | 2022-03-18 | 2022-06-17 | 电子科技大学 | Configurable fully-integrated temperature sensor based on Cortex-M3 kernel |
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| CN102175337B (en) | 2013-04-03 |
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