WO2020040132A1

WO2020040132A1 - Light emission device, light emission method, exposure device and device manufacturing method

Info

Publication number: WO2020040132A1
Application number: PCT/JP2019/032423
Authority: WO
Inventors: 達郎西根
Original assignee: 株式会社ニコン
Priority date: 2018-08-23
Filing date: 2019-08-20
Publication date: 2020-02-27
Also published as: TWI841585B; JP2022075761A; TW202023065A; JPWO2020040132A1; JP7380726B2

Abstract

Provided is a light emission device which ejects light from a light ejection surface and includes: a light emission element which emits light; a first optical element to which light is incident from the light emission element; and a second optical element which controls a spread angle of light ejected from a light ejection surface through the first optical element, wherein the light incident to the second optical light has a wavelength distribution that is different from the wavelength distribution of the light from the light emission element.

Description

Light emitting device, light emitting method, exposure apparatus, exposure method, and device manufacturing method

The present invention relates to, for example, the technical field of a light emitting device and a light emitting method for emitting light, an exposure apparatus and an exposure method for exposing a target, and a device manufacturing method for manufacturing a device.

In recent years, solid-state light sources such as light-emitting diodes (LEDs) and laser diodes (LDs) have been proposed as light-emitting devices that emit light (for example, see Patent Document 1). In solid-state light sources, it is an issue to generate light appropriately.

International Patent Publication No. WO99 / 45558 pamphlet

According to the first aspect, there is provided a light emitting device that emits light from a light exit surface, the light emitting device emitting light, the first optical element that receives light from the light emitting element, and the first optical element. A second optical element for controlling the spread angle of the light emitted from the light exit surface through the light emitting element, wherein light incident on the second optical element has a wavelength different from the wavelength distribution of the light from the light emitting element. A light emitting device having a distribution is provided.

According to the second aspect, there is provided a light emitting device that emits light from a light emitting surface, wherein the light emitting device emits light, a first optical element that resonates light from the light emitting device, and a light emitting device that emits light from the light emitting surface. And a second optical element for controlling the spread angle of the light.

According to the third aspect, a light-emitting element that emits light, a first optical element that receives light from the light-emitting element, and a second optical element that diffracts light passing through the first optical element, A light emitting device is provided in which light incident on the second optical element has a wavelength distribution different from the wavelength distribution of the light from the light emitting element.

According to a fourth aspect, there is provided a light emitting device including a light emitting element that emits light, a first optical element that resonates the light from the light emitting element, and a second optical element that diffracts the resonated light. Provided.

According to the fifth aspect, a light-emitting element that emits light, a first optical element that receives light from the light-emitting element, and a second optical element that refracts light passing through the first optical element, A light emitting device is provided in which light incident on the second optical element has a wavelength distribution different from the wavelength distribution of the light from the light emitting element.

According to a sixth aspect, there is provided a light emitting device including a light emitting element that emits light, a first optical element that resonates the light from the light emitting element, and a second optical element that refracts the resonated light. Provided.

According to the seventh aspect, there is provided a light emitting device that emits light from a light emitting surface, the light emitting device emitting light, a plurality of first optical elements provided to sandwich the light emitting element, and the light emitting device. And a second optical element provided on a surface and expanding a spread angle of laser-oscillated light between the plurality of first optical elements.

According to the eighth aspect, generating light with the light emitting element, controlling the wavelength distribution of the generated light, and controlling the spread angle of the light whose wavelength distribution is controlled, There is provided a light emitting method comprising:

According to a ninth aspect, an exposure comprising: the light emitting device provided by any one of the first to seventh aspects described above; and a projection optical system that irradiates a target with the light emitted by the light emitting device. An apparatus is provided.

According to a tenth aspect, the light is emitted from the light emitting device provided by any one of the first to seventh aspects, and an image of a light emitting surface of the light emitting device is formed on a target. And an exposure method including:

According to an eleventh aspect, there is provided a device manufacturing method including a lithography step, wherein the lithography step includes forming a line-and-space pattern on a target, and an exposure method provided by the tenth aspect. And cutting the line pattern constituting the line and space pattern using the method.

FIG. 1 is a sectional view showing the structure of the exposure apparatus of the present embodiment. FIG. 2 is a block diagram showing a block structure of a control system in the exposure apparatus of the present embodiment. FIG. 3A is a cross-sectional view illustrating a first structure of the electron beam generator, and FIG. 3B is a cross-sectional view illustrating a second structure of the electron beam generator. FIG. 4 is a cross-sectional view illustrating the structure of the light emitting device of the present embodiment. FIGS. 5A and 5B are graphs showing spectral distributions with respect to the wavelength of light. FIG. 6A is a cross-sectional view illustrating light emitted from the light emitting device of the present embodiment (that is, light whose light distribution characteristics are controlled by a diffraction layer), and FIG. 6B includes a diffraction layer. FIG. 9 is a cross-sectional view showing light emitted from a light emitting device of a comparative example different from the light emitting device of the present embodiment in that light emission characteristics are not controlled by the diffraction layer. FIG. 7A is a plan view showing a surface of the photonic crystal structure, and FIG. 7B is a cross-sectional view showing a VII-VII ′ section of the photonic crystal structure layer shown in FIG. 7A. is there. FIG. 8 is a sectional view showing the structure of the electron beam optical system. FIG. 9 is a cross-sectional view illustrating a structure of a light emitting device according to a first modification. FIG. 10 is a sectional view showing another example of the structure of the light emitting device of the first modification. FIG. 11 is a cross-sectional view illustrating another example of the structure of the light emitting device of the first modification. FIG. 12 is a cross-sectional view illustrating a structure of a light emitting device according to a second modification. FIG. 13 is a cross-sectional view illustrating a structure of a light emitting device according to a third modification. FIG. 14 is a cross-sectional view illustrating a structure of a light emitting device according to a fourth modification. FIG. 15 is a cross-sectional view illustrating a structure of a light emitting device according to a fifth modification. FIG. 16 is a cross-sectional view illustrating a structure of a light emitting device according to a sixth modification. FIG. 17A is a cross-sectional view illustrating light emitted from the light emitting device of the sixth modification, and FIG. 17B is different from the light emitting device of the sixth modification in that the light emitting device does not include a diffraction layer. It is sectional drawing which shows the light which the light emitting device of a different comparative example emits. FIGS. 18A and 18B are cross-sectional views illustrating another example of the structure of the light emitting device of the sixth modification. FIG. 19 is a perspective view showing an overall schematic configuration of an exposure apparatus of a seventh modification. FIG. 20 is a diagram illustrating a projection optical device of an exposure apparatus according to a seventh modification. FIG. 21 is a diagram showing an arrangement of each projection optical device of the exposure apparatus of the seventh modification. FIG. 22 is a flowchart showing the flow of the device manufacturing method.

Hereinafter, embodiments of a light emitting device, a light emitting method, an exposure apparatus, an exposure method, and a device manufacturing method will be described with reference to the drawings. Hereinafter, a light emitting device, a light emitting method, an exposure apparatus, an exposure method, and a device manufacturing method will be described using an exposure apparatus (that is, an electron beam exposure apparatus) EX that exposes the wafer W by irradiating the wafer W with an electron beam EB. An embodiment will be described. The exposure apparatus EX is used for, for example, complementary lithography.

In the following description, the positional relationship between various components constituting the exposure apparatus EX will be described using an XYZ orthogonal coordinate system defined by mutually orthogonal X, Y, and Z axes. In the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in a horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). And substantially in the vertical direction). Note that the Z-axis direction is also a direction parallel to each optical axis AX of a plurality of electron beam optical systems 8 described later provided in the exposure apparatus EX. Further, the Y-axis direction is a scanning direction in which the wafer W moves during exposure, which will be described later, in a plane perpendicular to the Z-axis. In addition, rotation directions (in other words, tilt directions) around the X axis, the Y axis, and the Z axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

(1) Structure of exposure apparatus EX
(1-1) Overall Structure of Exposure Apparatus EX First, the overall structure of the exposure apparatus EX of the present embodiment will be described with reference to FIGS. FIG. 1 is a sectional view showing the overall structure of the exposure apparatus EX of the present embodiment. FIG. 2 is a block diagram showing a block structure of a control system in the exposure apparatus EX of the present embodiment.

As shown in FIGS. 1 and 2, the exposure apparatus EX includes a stage chamber 1 (however, not shown in FIG. 2), a stage system 2, an optical system 3, and a controller 4 (however, not shown in FIG. 1). ).

The stage chamber 1 is a vacuum chamber capable of evacuating the exposure chamber 14 formed therein. In FIG. 1, illustration of both ends in the X-axis direction of the stage chamber 1 is omitted for simplification of the drawing. The stage chamber 1 includes a bottom wall 11, a side wall 12, and a frame 13, as shown in FIG. The space surrounded by the bottom wall 11, the side wall 12, and the frame 13 is the exposure chamber 14.

The bottom wall 11 is arranged on the floor F. The bottom wall 11 is, for example, a wall-shaped (or plate-shaped) member parallel to the XY plane. The bottom wall 11 is a member that forms the bottom of the stage chamber 1.

The side wall 12 is formed on the bottom wall 11. The side wall 12 is formed, for example, so as to surround the bottom wall 11 along the outer edge of the bottom wall 11. The side wall 12 is, for example, a tubular member (for example, a cylindrical or rectangular tube) that intersects the XY plane.

The frame 13 is formed on the side wall 12. In this case, the side wall 12 supports the frame 13 from below. The frame 13 is, for example, a plate-shaped member parallel to the XY plane. The frame 13 is a member that forms a ceiling wall (that is, an upper wall) of the stage chamber 1. The frame 13 has a circular (or other shape) opening 131 formed therein. The optical system 3 (particularly, the housing 6 included in the optical system 3) is arranged in the opening 131. Specifically, the housing 6 includes a flange portion 611 protruding outside of other portions at the upper end of the housing 6. The lower surface of the flange portion 611 contacts the upper surface of the frame 13 when the optical system 3 is inserted into the opening 131 from above. As a result, the flange portion 611 is supported by the frame 13 from below. That is, the optical system 3 is supported by the frame 13 via the flange 611. The space between the inner peripheral surface of the opening 131 and the outer peripheral surface of the housing 6 may be sealed by a seal member.

The stage system 2 is arranged in the exposure chamber 14 inside the stage chamber 1. The stage system 2 is arranged on the bottom wall 11 of the stage chamber 1. As shown in FIGS. 1 and 2, the stage system 2 includes a platen 21 (however, not shown in FIG. 2), a wafer stage 22 (however, not shown in FIG. 2), and a stage driving system 23 (however, 1 and a position measuring device 24 (however, not shown in FIG. 1).

The platen 21 is disposed on the bottom wall 11. The surface plate 21 is supported from below by the bottom wall 11 via a plurality of vibration isolating devices 25.

The wafer stage 22 can hold the wafer W. The wafer stage 22 can release the held wafer W. In order to hold the wafer W, the wafer stage 22 may include an electrostatic chuck capable of attracting the wafer W.

The wafer stage 22 is arranged on the surface plate 21. The wafer stage 22 is supported from below by the surface plate 21 via a weight canceling device 26. The weight canceling device 26 includes, for example, a metal bellows-type air spring 261 and a plate-shaped base slider 262. The upper end of the air spring 261 is connected to the lower surface of the wafer stage 22. The lower end of the air spring 261 is connected to the base slider 262. The base slider 262 is provided with a bearing (not shown) for ejecting the air inside the air spring 261 onto the surface plate 22. The weight of the weight canceling device 26, the wafer stage 22, and the wafer W is supported by the static pressure (that is, the pressure in the gap) between the bearing that ejects the pressurized air and the upper surface of the surface plate 22. The base slider 262 is supported on the surface plate 22 in a non-contact manner, for example, via a differential exhaust type aerostatic bearing.

The wafer W is, for example, a semiconductor substrate for manufacturing a semiconductor device. As an example, the wafer W is a circular semiconductor substrate having a diameter of 300 mm to which an electron beam resist is applied. Of course, the wafer W is not limited to a semiconductor substrate, and may be any substrate as long as it can be irradiated with the electron beam EB.

The stage drive system 23 is a drive system for moving the wafer stage 22 under the control of the control device 4. The stage drive system 23 moves the wafer stage 22 along each of the X-axis direction and the Y-axis direction. For example, the stage drive system 23 may move the wafer stage 22 at a predetermined stroke (for example, a stroke of 50 mm) along each of the X-axis direction and the Y-axis direction. The stage drive system 23 may move the wafer stage 22 along at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction in addition to or instead of at least one of the X-axis direction and the Y-axis direction. Good. In this case, the stage driving system 23 moves in at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction with a stroke shorter than the stroke in which the wafer stage 22 moves in at least one of the X-axis direction and the Y-axis direction. The wafer stage 22 may be moved along. The stage drive system 23 may finely move the wafer stage 22 along at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction. In order to move the wafer stage 22, the stage drive system 23 may include a motor (for example, a moving magnet type motor or an ultrasonic motor). When the stage drive system 23 includes a motor, the influence of magnetic field fluctuations (particularly, magnetic field fluctuations in the space above the wafer W) due to magnetic flux leakage from the motor on the positioning of the electron beam EB is negligible. is there.

The position measuring device 24 is a measuring device for measuring the position of the wafer stage 22. Specifically, the position measuring device 24 can measure the position of the wafer stage 22 in each of the X-axis direction and the Y-axis direction. The position measuring device 24 is configured to detect the position of the wafer stage 22 in at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction in addition to or instead of the position of the wafer stage 22 in at least one of the X-axis direction and the Y-axis direction. The position may be measurable. In order to measure the position of the wafer stage 22, the position measurement device 24 may include, for example, at least one of an encoder and a laser interferometer. The measurement result of the position measurement device 24 is output to the control device 4.

The optical system 3 is disposed above the stage system 2 (especially, above the wafer stage 22). The optical system 3 is arranged at a position where the optical system 3 can face the wafer W while the stage system 2 holds the wafer W. As shown in FIG. 1, the optical system 3 includes a plurality (for example, 45) of electron beam devices 5 and a housing 6.

Each electron beam device 5 can emit an electron beam EB. In the following description, the description will be given using an example in which each electron beam device 5 can emit a plurality of electron beams EB. That is, in the following description, description will be given using an example in which each electron beam device 5 is a multi-beam electron beam device that exposes the wafer W using a plurality of electron beams EB. The electron beam device 5 can irradiate the wafer W with a plurality of emitted electron beams EB.

In order to irradiate the wafer W with the plurality of electron beams EB, the electron beam device 5 includes an electron beam generating device 7 and an electron beam optical system 8 as shown in FIGS. The electron beam generation device 7 can generate a plurality of electron beams EB under the control of the control device 4. The electron beam optical system 8 emits a plurality of electron beams EB toward the wafer W under the control of the control device 4 such that the plurality of electron beams EB generated by the electron beam generating device 7 are irradiated on the wafer W. I do. The respective structures of the electron beam generating device 7 and the electron beam optical system 8 will be described later in detail with reference to FIGS.

The housing 6 includes a base plate 61, a peripheral wall portion 62, and a cooling plate 63. The base plate 61 is, for example, a plate-shaped member parallel to the XY plane. The base plate 61 is a member that forms a ceiling wall (that is, an upper wall) of the housing 6. In addition, the base plate 61 is provided with the above-described flange portion 611 on the outer edge thereof. The peripheral wall portion 62 is formed so as to surround the base plate 61 along the outer edge of the base plate 61. The upper end of the peripheral wall 62 is connected to the lower surface of the base plate 61. The peripheral wall portion 62 is, for example, a cylindrical (or square tubular) member that intersects the XY plane. The peripheral wall portion 62 is a member that forms a side wall of the housing 6. The cooling plate 63 is connected to a lower end of the peripheral wall portion 62. The cooling plate 63 is a member that forms a bottom wall of the housing 6. A space surrounded by the base plate 61, the peripheral wall portion 62, and the cooling plate 63 becomes a vacuum chamber 64 in which a plurality of electron beam devices 5 (particularly, a plurality of electron beam optical systems 8) are arranged. Note that the cooling plate 63 may or may not have a cooling function. The cooling plate 63 has a function of suppressing fogging, which is a phenomenon in which reflected electrons from the surface of the electron beam resist applied to the wafer W are reflected on the lower surface of the cooling plate 63 or the like to add a dose to the periphery. Or may not be possessed.

The base plate 61 has a plurality of through holes 612 that penetrate the base plate 61 along the Z-axis direction. The number of the plurality of through holes 612 is the same as the number of the plurality of electron beam devices 5. The plurality of through holes 612 may be distributed on the surface of the base plate 61, for example, in a matrix. For example, when the optical system 3 includes 45 electron beam devices 5 as described above, 45 through holes 612 form four corners of a matrix of 7 rows × 7 columns on the surface of the base plate 61. It may be distributed in an excluded array. In the plurality of through holes 612, a plurality of electron beam generation devices 7 provided in the plurality of electron beam devices 5, respectively, are arranged. In this case, the space between the through hole 612 and the electron beam generator 7 may be sealed by a seal member. Further, on the lower surface of the base plate 61, a plurality of electron beam optical systems 8 included in the plurality of electron beam devices 5 are arranged so as to surround the plurality of through holes 612.

The cooling plate 63 has a plurality of through holes 631 penetrating the base plate 61 along the Z-axis direction. The number of the plurality of through holes 631 is the same as the number of the plurality of electron beam devices 5. The plurality of through holes 631 may be distributed, for example, in a matrix on the surface of the cooling plate 63. For example, when the optical system 3 includes 45 electron beam devices 5 as described above, 45 through holes 631 are formed on the surface of the cooling plate 63 at four corners of a matrix of 7 rows × 7 columns. May be distributed in an array excluding. The plurality of electron beams EB emitted from each electron beam device 5 pass through a through hole 612 corresponding to each electron beam device 5. That is, each electron beam device 5 irradiates the wafer W with a plurality of electron beams EB via the through holes 612 corresponding to each electron beam device 5. For this reason, each through-hole 612 has a size (particularly, a diameter) that allows a plurality of electron beams EB emitted from the electron beam device 5 corresponding to each through-hole 612 to pass.

(4) The control device 4 controls the operation of the entire exposure apparatus EX. For example, the control device 4 may control the stage drive system 23 based on the measurement result of the position measurement device 24 so that the wafer W is appropriately exposed. For example, the control device 4 may control the plurality of electron beam devices 5 so that the wafer W is appropriately exposed. In the example shown in FIG. 2, the exposure apparatus EX includes a control device 4 that controls the operation of the entire exposure apparatus EX. However, the exposure apparatus EX is controlled by the control device 4 that controls the entire operation of the exposure apparatus EX. In addition, a plurality of sub-control devices for controlling the plurality of electron beam devices 5 may be provided. In this case, the plurality of sub-control devices may respectively control the plurality of electron beam devices 5 under the control of the control device 4. Further, the control device 4 may be provided outside the exposure apparatus EX. In this case, the control device 4 may be connected to the exposure apparatus EX via a network.

(1-2) Structure of Electron Beam Generating Apparatus 7 Next, the structure of the electron beam generating apparatus 7 will be further described with reference to FIGS. 3 (a) and 3 (b). FIG. 3A is a cross-sectional view illustrating a first structure of the electron beam generator 7. FIG. 3B is a cross-sectional view illustrating a second structure of the electron beam generator 7.

As shown in FIG. 3A, the electron beam generator 7 includes a plurality of light emitting devices 71, a plurality of projection lenses 72, and a photoelectric conversion element 73.

The plurality of light emitting devices 71 are formed on a single substrate (not shown) (for example, a semiconductor substrate). However, the substrate on which a part of the plurality of light emitting devices 71 is formed may be separate from the substrate on which the other part of the plurality of light emitting devices 71 is formed. The plurality of light emitting devices 71 are arranged in a predetermined arrangement pattern on the substrate. For example, the plurality of light emitting devices 71 may be arranged on the substrate in a two-dimensional array (or in a one-dimensional array). In this case, the plurality of light emitting devices 71 may be referred to as a light emitting device array. Note that the number of light emitting devices 71 is arbitrary, but as an example, the electron beam generating device 7 may include 72,000 light emitting devices 71. In this case, the 72,000 light emitting devices 71 may be arranged in a two-dimensional array of 6000 rows × 12 columns on the substrate.

Such a plurality of light emitting devices 71 can be manufactured, for example, as follows. First, a structure (for example, a structure layer such as a quantum well layer 711 described later) constituting the light emitting device 71 is formed on a substrate by using an epitaxial growth technique or the like. Thereafter, the structure formed on the substrate is selectively removed according to the arrangement pattern of the plurality of light emitting devices 71 by using an etching technique or the like. The removal of the structure in this case is performed to leave the structure constituting each light emitting device 71 as a mesa structure or to separate a plurality of light emitting devices 71 integrated as a structure.

Each light emitting device 71 can emit light EL. Each light emitting device 71 is, for example, a self-luminous type light emitting device. In this case, each light emitting device 71 emits the light EL generated by self-emission toward the outside of each light emitting device 71 (for example, toward the projection lens 72 corresponding to each light emitting device 71).

The light emission mode of the plurality of light emitting devices 71 can be individually controlled under the control of the control device 4. For example, the control device 4 can individually control the states of the plurality of light emitting devices 71 between a light emitting state where the light EL is emitted and a non-light emitting state where the light EL is not emitted. For example, the control device 4 can individually control the intensities of the plurality of lights EL emitted from the plurality of light emitting devices 71, respectively.

An LED (Light Emitting Diode) is an example of a self-luminous light emitting device. Accordingly, each light emitting device 71 may include an LED (for example, a micro LED). However, each light emitting device 71 is not limited to a micro LED, and may include another type of LED. Examples of other types of LEDs include organic LEDs and polymer LEDs.

In the present embodiment, each light emitting device 71 is different from the existing LED in that the characteristics of the emitted light EL can be controlled. Hereinafter, the structure of the light emitting device 71 of the present embodiment, which is different from the existing LED in that the characteristics of the emitted light EL can be controlled, will be described with reference to FIG. FIG. 4 is a cross-sectional view illustrating the structure of the light emitting device 71 of the present embodiment.

As shown in FIG. 4, the light emitting device 71 includes a quantum well layer (active layer) 711, a cladding layer 712, a cladding layer 713, a reflection layer 714, a reflection layer 715, and a diffraction layer 716. The light-emitting device 71 includes a diffraction layer 716, a reflection layer 715, a cladding layer 713, a quantum well layer 711, a cladding layer 712, and a reflection layer 714 when viewed from a light emission surface 719 from which the light emission device 71 emits light EL to the outside. Have a laminated structure laminated in this order. That is, the quantum well layer 711, the cladding layers 712 and 713, the reflection layers 714 and 715, and the diffraction layer 716 are integrated. The light emitting device 71 is a structure in which a quantum well layer 711, cladding layers 712 and 713, reflection layers 714 and 715, and a diffraction layer 716 are integrated. The light emitting device 71 may further include a layer different from the quantum well layer 711, the cladding layers 712 and 713, the reflection layers 714 and 715, and the diffraction layer 716.

The quantum well layer 711 is a semiconductor layer having a smaller band gap than the cladding layers 712 and 713 (for example, a semiconductor layer containing at least one of AlGaAs and GaAs). Each of the cladding layers 712 and 713 is a semiconductor layer having a larger band gap than the quantum well layer 711 (for example, a semiconductor layer containing AlGaAs, AlGaInP, or InGaN). One of the cladding layers 712 and 713 is a p-type semiconductor layer. The other of the cladding layers 712 and 713 is an n-type semiconductor layer.

The quantum well layer 711 is a layer that can form a potential well (that is, a quantum well (QW: Ouantum @ Well)) in which the moving direction of electrons is restricted. That is, the light emitting device 71 is a light emitting device having a double hetero structure using a quantum well. The quantum well layer 711 has a multiple quantum well structure (MQW: Multi Quantum Well) in which a plurality of layers for forming the quantum well are stacked. However, the quantum well layer 711 may have a single quantum well structure including only one layer for forming a quantum well.

(4) When a voltage is applied between the clad layer 712 and the clad layer 713 via an electrode (not shown), electrons and holes are recombined in the quantum well layer 711. As a result, energy resulting from the recombination is emitted as light. That is, light EL0 is generated in the quantum well layer 711.

The reflection layers 714 and 715 are arranged so as to sandwich the quantum well layer 711 therebetween. In the example illustrated in FIG. 4, the reflection layer 714 is disposed on the side opposite to the light emission surface 719 when viewed from the quantum well layer 711, and the reflection layer 715 is disposed on the light emission surface 719 side when viewed from the quantum well layer 711. Are located in

光 Light EL0 generated in the quantum well layer 711 is incident on the reflection layer 714 via the cladding layer 712. The reflective layer 714 reflects at least a part of the light EL0 incident on the reflective layer 714. Light EL0 generated in the quantum well layer 711 is incident on the reflection layer 715 via the cladding layer 713. The reflection layer 715 reflects at least a part of the light EL incident on the reflection layer 715. The light EL0 reflected by the reflection layer 714 is incident on the reflection layer 715 via the cladding layer 712, the quantum well layer 711, and the cladding layer 713. Therefore, at least part of the light EL0 reflected by the reflective layer 714 is reflected again by the reflective layer 715. The light EL0 reflected by the reflective layer 715 is incident on the reflective layer 714 via the clad layer 713, the quantum well layer 711, and the clad layer 712. Therefore, at least a part of the light EL0 reflected by the reflective layer 715 is reflected again by the reflective layer 714.

光 Thus, the light EL0 generated in the quantum well layer 711 is repeatedly reflected on the reflection layers 714 and 715. As a result, the light EL0 repeatedly reflected on the reflection layers 714 and 715 forms a standing wave. Therefore, the light EL0 that has been repeatedly reflected on the reflection layers 714 and 715 has a resonance compared with the light EL0 that has not been repeatedly reflected on the reflection layers 714 and 715 (that is, the light EL0 that has just been generated in the quantum well layer 711). It is different in that it is in a state where it has been done. That is, the light EL0 traveling inside the quantum well layer 711 and the cladding layers 712 and 713 located between the reflection layers 714 and 715 resonates. The reflection layers 714 and 715 resonate the light EL0 between the reflection layer 714 and the diffraction layer 716 (or between the reflection layer 714 and the light exit surface 719).

As a result of the resonance of the light EL0, the light EL0 repeatedly reflected on the reflection layers 714 and 715 is compared with the light EL0 not repeatedly reflected on the reflection layers 714 and 715 in a specific wavelength range (hereinafter referred to as a “resonance wavelength range”). ) Are different in that the light component is relatively amplified. The light EL0 repeatedly reflected on the reflection layers 714 and 715 is compared with the light EL0 not repeatedly reflected on the reflection layers 714 and 715, and the intensity (for example, the average value) of the light component in a wavelength range other than the resonance wavelength range. In that the ratio of the intensity (eg, peak value) of the light component in the resonance wavelength range to the resonance wavelength range is high. That is, the reflection layers 714 and 715 can function as a resonator that resonates the light EL0. The reflection layers 714 and 715 constitute a resonator that resonates the light EL0.

分布 As an example of such reflection layers 714 and 715, there is a distributed reflection type reflection layer (a so-called DBR (Distributed Bragg Reflector) layer). The DBR layer has a stacked structure in which a plurality of semiconductor layers having different refractive indexes are stacked. The characteristics (eg, material, thickness, refractive index, number of layers, and the like) of the semiconductor layer are appropriately set according to the resonance wavelength range. The arrangement positions of the reflection layers 714 and 715 (particularly, relative positions to the quantum well layer 711, typically the distances) are also appropriately set according to the resonance wavelength range. Of course, a different type of reflective layer than the DBR layer may be used as the

reflective layers

714 and 715.

Note that the resonance wavelength range may be set according to the wavelength of the light EL to be emitted from the light emitting device 71 (that is, the wavelength of the light EL that the light emitting device 71 is set to emit by design). . For example, the resonance wavelength range may be set as a wavelength range centered on the wavelength of the light EL to be emitted from the light emitting device 71. Further, the “wavelength range” in the present embodiment means a range from one wavelength to another wavelength, but one wavelength and another wavelength may be different, or one wavelength may be different. Other wavelengths may be the same. If one wavelength is the same as another wavelength, the wavelength range will effectively indicate a particular wavelength.

光 The resonated light EL0 enters the diffraction layer 716 via the reflection layer 715. Therefore, the reflectance of the reflective layer 715 is less than 100% (for example, 50% to 60%). Here, the reflectance of the reflective layer 715 may be a reflectance with respect to the wavelength of the light EL to be emitted from the light emitting device 71. Note that the reflection layer 715 may constitute a so-called half mirror. As a result of the resonated light EL0 being incident on the diffraction layer 716, the wavelength distribution of the light EL0 incident on the diffraction layer 716 is different from the wavelength distribution of the light EL0 generated in the quantum well layer 711. Therefore, the light EL0 incident on the diffraction layer 716 is equivalent to the light obtained by controlling the wavelength distribution of the light EL0 generated in the quantum well layer 711. Therefore, it can be said that the light emitting device 71 substantially controls the wavelength distribution of the light EL0 generated in the quantum well layer 711 by using at least the reflection layers 714 and 715. It can be said that the light emitting device 71 substantially includes an optical element including at least the

reflective layers

714 and 715 as an optical element for controlling the wavelength distribution of the light EL0 generated in the quantum well layer 711. Hereinafter, the light EL0 incident on the diffraction layer 716 is referred to as “light EL1”, and is distinguished from the light EL0 before entering the diffraction layer 716 (for example, the light EL0 generated in the quantum well layer 711).

Here, the difference between the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711 will be described with reference to FIGS. 5A and 5B. FIG. 5A is a graph showing a spectrum distribution with respect to the wavelength of the light EL1. FIG. 5B is a graph showing a spectrum distribution with respect to the wavelength of the light EL0.

光 As shown in FIGS. 5A and 5B, the light EL1 may be narrower light than the light EL0. Specifically, the light EL1 may be light whose wavelength distribution is narrower than that of the light EL0. In this case, the reflection layers 714 and 715 may reflect the light EL0 so that the light emitting device 71 emits the light EL having a band narrower than the light EL0. The characteristics of the reflective layers 714 and 715 (for example, the characteristics of the semiconductor layer described above and the positions of the reflective layers 714 and 715) realize a state in which the light emitting device 71 emits the light EL having a band narrower than that of the light EL0. It may be set to possible desired characteristics. As a result, the light EL 1 whose band has been narrowed (that is, the wavelength distribution has been controlled so as to be narrowed) enters the diffraction layer 716. Note that “narrowing the band” here may mean that the wavelength range where the intensity is equal to or more than a predetermined value is narrowed. “Narrowing the band” means that the wavelength range (so-called spectral line width) in which the intensity has a specific ratio value (for example, a value of や or 1/10) as compared with the peak value is narrowed. It may mean. Further, “narrowing of the band” may mean that the 95% energy purity width E95% is narrowed. Here, the 95% energy purity range E95% can be a width when the integrated value of the intensity distribution within the width becomes 95% of the total integrated value of the intensity distribution of the spectrum.

光 As shown in FIGS. 5A and 5B, the light EL1 may have a smaller half-width of the spectrum distribution than the light EL0. In this case, the

reflective layers

714 and 715 may reflect the light EL0 such that the light emitting device 71 emits the light EL having a smaller half-width of the spectral distribution than the light EL0. The characteristics of the

reflective layers

714 and 715 may be set to desired characteristics capable of realizing a state in which the light emitting device 71 emits the light EL having a smaller half width of the spectral distribution than the light EL0. As a result, light EL 1 whose half width of the spectrum distribution is reduced (that is, the wavelength distribution is controlled so that the half width of the spectrum distribution is reduced) is incident on the diffraction layer 716. The half width may be a full width at half maximum (FWHM: Full Width at at Half Maximum) or a half width at half maximum (HWHM: Half Width at at Half Half Maximum). Note that the above-mentioned “narrowing of the band” may mean that the half width is reduced.

(5) As shown in FIGS. 5A and 5B, the light EL1 may have a larger peak value Ip of intensity than the light EL0. That is, the peak value Ip1 of the intensity of the light EL1 may be larger than the peak value Ip0 of the intensity of the light EL0. In this case, the reflection layers 714 and 715 may reflect the light EL0 such that the light emitting device 71 emits the light EL having the peak intensity Ip greater than that of the light EL0. The characteristics of the

reflective layers

714 and 715 may be set to desired characteristics capable of realizing a state in which the light emitting device 71 emits the light EL having a greater intensity peak value Ip than the light EL0. As a result, the light EL1 whose peak value Ip of the intensity has increased (that is, whose wavelength distribution has been controlled so as to increase the peak value Ip of the intensity) enters the diffraction layer 716. In addition, the above-mentioned “narrowing of the band” may mean that the peak value of the intensity increases. The wavelength at which the intensity has the peak value Ip is likely to be included in the resonance wavelength range. In particular, there is a high possibility that the wavelength at which the intensity reaches the peak value Ip coincides with the center wavelength λc of the resonance wavelength range or a wavelength in the vicinity thereof. For this reason, the above-mentioned “narrow band” means that the intensity is a wavelength range centered on the center wavelength λc at which the intensity becomes the peak value Ip, and the intensity becomes a specific value or more as compared with the predetermined value or the peak value. It may mean that the wavelength range in which the value of the ratio is narrowed.

4 again, the diffraction layer 716 is disposed at the interface between the space in which the light EL emitted from the light emitting device 71 propagates and the light emitting device 71. For this reason, the light emitting device 71 emits the light EL from the diffraction layer 716 toward the space outside the light emitting device 71. Therefore, at least a part of the surface of the diffraction layer 716 (particularly, the lower surface facing the projection lens 72 side) forms a light exit surface 719 from which the light EL is emitted. The surface (particularly, the lower surface facing the projection lens 72) of the diffraction layer 716 includes a light exit surface 719. In the example shown in FIG. 4, the light exit surface 719 includes a surface parallel to the XY plane.

The diffraction layer 716 diffracts light incident on the diffraction layer 716. The diffraction layer 716 deflects light passing through the diffraction layer 716 by diffracting light incident on the diffraction layer 716. At this time, the deflection angle of the light passing through the diffraction layer 716 differs depending on the wavelength of the light. For example, the diffractive layer 716 imparts a first deflection angle to light of a first wavelength, and a second deflection angle different from the first deflection angle to light of a second wavelength different from the first wavelength. May be provided. In this case, the light of the first wavelength and the light of the second wavelength travel in different directions. That is, the diffraction layer 716 can substantially separate light of different wavelengths. The deflection angle may be an angle between an axis along the traveling direction of the incident light and an axis along the traveling direction of the deflected light.

光 As described above, the light EL 1 enters the diffraction layer 716 via the reflection layer 715. Therefore, the diffraction layer 716 diffracts the light EL1 incident on the diffraction layer 716 via the reflection layer 715. Therefore, the light EL1 diffracted by the diffraction layer 716 is emitted from the light emitting device 71 as the light EL. When the light emitting device 71 is an LED, the phase of the first light emitted as a part of the light EL from the first position of the light exit surface 719 is different from the first position of the light exit surface 719. The phase of the second light emitted as another part of the light EL from the two positions may be different from each other. Stated another way, the first light from the first position on the light exit surface 719 and the second light from the second position on the light exit surface 719 may be mutually incoherent.

In the present embodiment, particularly, the diffraction layer 716 diffracts the light EL1 to control the light distribution characteristics (specifically, the light distribution) of the light EL from the light emitting device 71. That is, the diffraction layer 716 can function as an optical element for controlling the light distribution characteristics of the light EL using the diffraction of the light EL1. Hereinafter, the control of the light distribution characteristics of the light EL by the diffraction layer 716 will be described with reference to FIGS. 6A and 6B. FIG. 6A is a cross-sectional view illustrating light EL emitted by the light emitting device 71 of the present embodiment (that is, light EL whose light distribution characteristics are controlled by the diffraction layer 716). FIG. 6B shows light EL emitted from a light emitting device C71 of a comparative example different from the light emitting device 71 of the present embodiment in that the light emitting characteristic is controlled by the diffraction layer 716. FIG. 13 is a cross-sectional view showing light EL not shown).

6A and 6B, the spread angle θ1 of the light EL emitted from the light emitting device 71 may be smaller than the spread angle θ2 of the light EL emitted from the light emitting device C71. That is, the diffraction layer 716 may diffract the light EL1 such that the spread angle θ of the light EL is smaller than when the light EL1 is not diffracted. The diffraction layer 716 may deflect the light EL1 so that the spread angle θ of the light EL is smaller than when the light EL1 is not diffracted. The characteristic of the diffractive layer 716 is set to a desired characteristic that allows the light EL1 to be diffracted (resulting in deflection) so that the spread angle θ of the light EL is smaller than when the light EL1 is not diffracted. Is also good. Here, the “spread angle θ” may mean a divergence angle of the light EL emitted from the light emitting device 71. The “spread angle θ” is twice the angle formed by the axis of the light EL emitted by the light emitting device 71 and the axis of the light beam having the maximum radiation intensity and the axis of the light beam having the predetermined radiation intensity. Value. Note that the predetermined value of the radiation intensity may be １／ of the maximum radiation intensity.

In particular, the diffraction layer 716 may diffract the light EL1 such that the spread angle θ of the light EL is reduced and the spread angle θ of the light EL becomes a desired angle. The diffraction layer 716 may deflect the light EL1 such that the spread angle θ of the light EL is reduced and the spread angle θ of the light EL becomes a desired angle. The characteristic of the diffraction layer 716 is set to a desired characteristic that allows the light EL1 to be diffracted (and consequently deflected) so that the spread angle θ of the light EL becomes small and the spread angle θ of the light EL becomes a desired angle. It may be.

As described above, when the diffraction layer 716 diffracts and deflects the light EL1, the deflection angle of the light passing through the diffraction layer 716 differs depending on the wavelength of the light. For this reason, the diffractive layer 716 easily makes the spread angle θ of the light component in the diffraction wavelength range relatively small by diffracting the light component in a specific wavelength range (hereinafter, referred to as “diffraction wavelength range”). In some cases, even when diffracting a light component in a wavelength range other than the diffraction wavelength range, the spread angle θ of the light component in a wavelength range other than the diffraction wavelength range is difficult to be relatively small. The diffractive layer 716 diffracts the light component in the diffraction wavelength range to easily set the spread angle θ of the light component in the diffraction wavelength range to a desired angle, while diffracting the light component in the wavelength range other than the diffraction wavelength range. It is difficult to set the spread angle θ of the light component in the wavelength range other than the diffraction wavelength range to a desired angle (for example, even if the light component in the wavelength range other than the diffraction wavelength range is diffracted, the wavelength range other than the diffraction wavelength range is difficult). (The spread angle θ of the light component is set to an angle different from the desired angle). Therefore, the higher the overlap ratio between the wavelength range of the light EL1 incident on the diffraction layer 716 and the diffraction wavelength range, the higher the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 should be. That is, the higher the overlap ratio between the wavelength range of the light EL1 incident on the diffraction layer 716 and the diffraction wavelength range, the more the diffraction layer 716 diffracts the light EL1 and sets the spread angle θ of the light EL to a desired angle. Should be easier to set.

Here, the light EL1 incident on the diffraction layer 716 is the light EL0 resonated by the reflection layers 714 and 715 (that is, the light EL0 in which the light component in the resonance wavelength range is relatively amplified). is there. In this case, from the viewpoint of improving the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716, the resonance wavelength range may at least partially overlap the diffraction wavelength range. Conversely, if the characteristics of the reflection layers 714 and 715 and the diffraction layer 716 are set so that the resonance wavelength range and the diffraction wavelength range at least partially overlap, the resonance wavelength range and the diffraction wavelength range do not overlap. As compared with the case, improvement in the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 can be expected. In this case, it can be said that the reflection layers 714 and 715 resonate the light EL0 so that the control efficiency of the light distribution characteristics of the light EL is improved.

If the reflection layers 714 and 715 are not present, the light EL0 generated in the quantum well layer 711 will be incident on the diffraction layer 716. In this case, the wavelength range of the light EL0 incident on the diffraction layer EL0 is the diffraction wavelength range. Does not necessarily overlap at least partially. Therefore, there is a possibility that the light EL0 in which the intensity of the light component in the diffraction wavelength range is not so high (for example, the intensity of the light component in the wavelength range different from the diffraction wavelength range is relatively high) enters the diffraction layer 716. . As a result, if the reflection layers 714 and 715 are not present, the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716 may be deteriorated. On the other hand, in the present embodiment, the resonance wavelength for the light EL0 (for example, the intensity (for example, the average value) of the light component in the wavelength range other than the resonance wavelength range) in which the light component in the resonance wavelength range is relatively amplified. The light EL0 in a state where the ratio of the intensity (for example, peak value) of the light components in the range is not high enters the diffraction layer 716. For this reason, if the resonance wavelength range and the diffraction wavelength range at least partially overlap, the intensity of the light component in the diffraction wavelength range is not so high (for example, the intensity of the light component in the wavelength range different from the diffraction wavelength range). (Relatively high) The possibility that the light EL0 is incident on the diffraction layer 716 is reduced. That is, there is a high possibility that the light EL0 in which the intensity of the light component in the diffraction wavelength range is relatively high (for example, the intensity of the light component in the wavelength range different from the diffraction wavelength range is relatively low) enters the diffraction layer 716. . As a result, since the

reflective layers

714 and 715 are present, the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716 is improved.

Note that the diffraction wavelength range may or may not match the resonance wavelength range. The center wavelength of the diffraction wavelength range may or may not match the center wavelength of the resonance wavelength range. However, when the diffraction wavelength range matches the resonance wavelength range, the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716 is higher than when the diffraction wavelength range does not match the resonance wavelength range. It is highly likely that it will be further improved. When the center wavelength of the diffraction wavelength range coincides with the center wavelength of the resonance wavelength range, the light generated by the diffraction layer 716 is compared with the case where the center wavelength of the diffraction wavelength range does not match the center wavelength of the resonance wavelength range. There is a high possibility that the control efficiency of the light distribution characteristics of the EL is further improved.

(4) The smaller the spread angle θ of the light EL, the higher the directivity of the light EL. Therefore, it can be said that the directivity of the light EL emitted by the light emitting device 71 is higher than the directivity of the light EL emitted by the light emitting device C71. Therefore, the diffraction layer 716 may diffract the light EL1 so that the directivity of the light EL is higher than when the light EL1 is not diffracted.

In the present embodiment, the diffraction layer 716 may diffract the light EL1 using a photonic crystal structure. That is, the diffraction layer 716 may be a layer having a photonic crystal structure. A photonic crystal structure is a structure that includes a microstructure having a periodic dielectric constant distribution therein (and thus also having a periodic refractive index distribution therein). Hereinafter, an example of the structure of the diffraction layer 716 will be described with reference to FIGS. 7A and 7B. FIG. 7A is a plan view showing the surface of the diffraction layer 716 (particularly, the lower surface facing the projection lens 72). FIG. 7B is a cross-sectional view showing a VII-VII 'cross section of the diffraction layer 716 shown in FIG. 7A.

回折 As shown in FIGS. 7A and 7B, the diffraction layer 716 includes a substrate 7161. The substrate 7161 is a plate-like member that extends along the XY plane. The substrate 7161 is, for example, a semiconductor substrate. A plurality of holes 7162 are formed in the substrate 7161. The plurality of holes 7162 are periodically distributed along each of the X-axis direction and the Y-axis direction (or each of two directions orthogonal to each other and included in the XY plane).

材料 The plurality of holes 7162 do not contain a material constituting the substrate 7161. Therefore, the dielectric constant of a region (in this case, a space) forming the plurality of holes 7162 is different from the dielectric constant of the substrate 7161. Here, when a medium is present in the region (space), the dielectric constant of the region (space) forming the plurality of holes 7162 can be set to the dielectric constant of the medium. In this case, the dielectric constant of vacuum can be used. Therefore, in the photonic crystal structure element 716, the region portion having the first dielectric constant (that is, the plurality of holes 7162) is replaced with the region portion having a dielectric constant different from the first dielectric constant (that is, the substrate 7161). Can be said to be periodically distributed in the. In particular, a plurality of holes 7162 are periodically formed along each of the X-axis direction and the Y-axis direction. For this reason, the diffraction layer 716 shown in FIG. 7A is a layer having a two-dimensional photonic crystal structure in which the dielectric constant changes periodically along a two-dimensional plane.

When the dielectric constant of the plurality of holes 7162 and the dielectric constant of the substrate 7161 are different, the refractive index of the plurality of holes 7162 (specifically, the refractive index for light) is different from the refractive index of the substrate 7161. For this reason, in the photonic crystal structure element 716, the region portion having the first refractive index (that is, the plurality of holes 7162) is replaced with the region portion having a refractive index different from the first refractive index (that is, the substrate 7161). Can also be said to be periodically distributed within. The diffraction layer 716 illustrated in FIG. 7A can be said to be a layer having a two-dimensional photonic crystal structure in which the refractive index periodically changes along a two-dimensional plane.

材料 A material (for example, a semiconductor material) having a dielectric constant different from that of the substrate 7161 may be embedded in the plurality of holes 7162. Even in this case, in the photonic crystal structure element 716, the region portion having the first dielectric constant (that is, the plurality of materials embedded in the plurality of holes 7162) is different from the first dielectric constant. It can be said that it is periodically distributed in the region having the dielectric constant (that is, the substrate 7161).

When the diffraction layer 716 has such a photonic crystal structure, characteristics of the diffraction layer 716 mainly depend on characteristics of the photonic crystal structure. Therefore, the characteristics of the photonic crystal structure may be appropriately set so that the diffraction layer 716 has the above-described characteristics (that is, characteristics determined from the viewpoint of controlling the light distribution characteristics of the light EL).

An example of the characteristics of the photonic crystal structure is an arrangement pitch P of the plurality of holes 7162 (that is, the period of the plurality of holes 7162). The arrangement pitch P may be set based on, for example, the wavelength of the light EL to be emitted from the light emitting device 71. For example, the arrangement pitch P may be the same as the wavelength of the light EL. For example, the arrangement pitch P may be larger than the wavelength of the light EL. For example, the arrangement pitch P may be larger than the wavelength of the light EL by a predetermined length. For example, the arrangement pitch P may be larger than the wavelength of the light EL by a predetermined ratio. For example, the arrangement pitch P may be smaller than the wavelength of the light EL. For example, the arrangement pitch P may be smaller by a predetermined length than the wavelength of the light EL. For example, the arrangement pitch P may be smaller by a predetermined ratio than the wavelength of the light EL. In any case, the arrangement pitch P may be set to a value that can improve the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716. The arrangement pitch P may be set to a value that allows the diffraction wavelength range and the resonance wavelength range to at least partially overlap.

As shown in FIG. 7, a plurality of holes 7162 are arranged at a first arrangement pitch along a first direction (for example, X direction), and are arranged in a second direction (for example, Y direction) intersecting with the first direction. When the second arrangement pitch is arranged along the first arrangement pitch, the first arrangement pitch and the second arrangement pitch may be the same pitch or different pitches. As an example, the first arrangement pitch may be larger than the second arrangement pitch.

An example of the characteristics of the photonic crystal structure is the depth D of the plurality of holes 7162. The depth D may be set to a value that can improve the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716. It should be noted that as the depth D increases, the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716 is more likely to be improved. However, when the depth D is excessively large, the holes 7162 may penetrate the diffraction layer 716 (for example, the substrate 7161) along the Z-axis direction. As a result, another layer adjacent to the diffraction layer 716 (the reflective layer 715 in the example shown in FIG. 4) may be affected. Therefore, the depth D may be set to such a value that the hole 7162 does not penetrate the diffraction layer 716 along the Z-axis direction. Of course, as long as the influence on other layers adjacent to the diffraction layer 716 is small, the hole 7162 may penetrate the diffraction layer 716 along the Z-axis direction.

The depth D of the plurality of holes 7162 may be different at different positions on the light emitting surface of the light emitting device 71, or may be the same at different positions on the light emitting surface of the light emitting device 71. Good.

形状 One example of the characteristics of the photonic crystal structure is the shape of the plurality of holes 7162. The shape of the plurality of holes 7162 may be set to a desired shape capable of improving the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716. In the example illustrated in FIGS. 7A and 7B, the plurality of holes 7162 are cylindrical holes. That is, the plurality of holes 7162 are holes whose cross section along the XY plane has a circular shape and whose cross section including the Z axis has a rectangular shape. However, the plurality of holes 7162 may have a shape different from the shapes shown in FIGS. 7A and 7B. For example, the plurality of holes 7162 may be prismatic holes (that is, holes in which both the cross-sectional shape along the XY plane and the cross-sectional shape including the Z axis are rectangular). For example, the plurality of holes 7162 may be tapered columnar holes. The shapes of the plurality of holes 7162 may be the same as each other.

配列 An example of the characteristics of the photonic crystal structure is an array pattern of a plurality of holes 7162. The arrangement pattern of the plurality of holes 7162 may be set to a desired pattern that can improve the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716. In the example shown in FIGS. 7A and 7B, the plurality of holes 7162 are arranged in a plane lattice pattern on the surface of the substrate 7161 (that is, on the XY plane). Particularly, in the example shown in FIGS. 7A and 7B, the plurality of holes 7162 are arranged in a triangular lattice (that is, hexagonal lattice) arrangement pattern. However, the plurality of holes 7162 may be arranged in an arrangement pattern different from the arrangement patterns shown in FIGS. 7A and 7B. For example, the plurality of holes 7162 may be arranged in an oblique lattice (ie, isosceles triangular lattice) arrangement pattern, a rectangular lattice arrangement pattern, or a parallel body lattice arrangement pattern.

3A again, the plurality of projection lenses 72 are optical lenses arranged to correspond to the plurality of light emitting devices 71, respectively. Therefore, the number of the plurality of projection lenses 72 is the same as the number of the plurality of light emitting devices 71. That is, when the electron beam generator 7 includes 72,000 light emitting devices 71, the electron beam generator 7 may include 72000 projection lenses 72.

However, as shown in FIG. 3B, the electron beam generator 7 may include one or more projection lenses 720 corresponding to two or more light emitting devices 71. In the example illustrated in FIG. 3B, the electron beam generation device 7 includes one projection lens 720 collectively corresponding to the plurality of light emitting devices 71 included in the electron beam generation device 7. Of course, the electron beam generating device 7 is a projection lens 720 corresponding to a first group of light emitting device groups including two or more light emitting devices 71 among the plurality of light emitting devices 71 provided in the electron beam generating device 7. , One projection lens 720 corresponding to the second light emitting device group, and one projection lens 720 corresponding to the K th light emitting device group. In this case, the number of the projection lenses 720 may be smaller than the number of the plurality of light emitting devices 71.

In FIG. 3A, light EL emitted from the light emitting device 71 corresponding to each projection lens 72 is incident on each projection lens 72. Each projection lens 72 is, for example, a micro lens, but may be another optical element. Each projection lens 72 irradiates the light EL emitted by the light emitting device 71 corresponding to each projection lens 72 to a photoelectric conversion element 73 (particularly, a specific area corresponding to each projection lens 72 in the photoelectric conversion element 73). Each projection lens 72 converts an image of a light emitting surface (e.g., light emission surface 719) of a light emitting device 71 corresponding to each projection lens 72 into a photoelectric conversion element 73 (particularly, corresponding to each projection lens 72 of the photoelectric conversion elements 73). In a specific area to be formed).

In FIG. 3B, a plurality of lights EL emitted from the plurality of light emitting devices 71 enter the projection lens 720. The projection lens 720 irradiates the plurality of lights EL emitted from the plurality of light emitting devices 71 to the photoelectric conversion element 73 (particularly, a specific area corresponding to each light emitting device 71 in the photoelectric conversion element 73). The projection lens 720 forms images of the light emitting surfaces (for example, the light emitting surfaces 719) of the plurality of light emitting devices 71 on the photoelectric conversion elements 73 (particularly, specific regions corresponding to each light emitting device among the photoelectric conversion elements 73). .

Each of the projection lens 72 and the projection lens 720 is a reduction optical system having a reduction magnification. In this case, each projection lens 72 forms a reduced image of the light emitting surface of the light emitting device 71 corresponding to each projection lens 72 on the photoelectric conversion element 73. Further, the projection lens 720 forms reduced images of the light emitting surfaces of the plurality of light emitting devices 71 on the photoelectric conversion element 73. Each of the projection lens 72 and the projection lens 720 may be a 1 × optical system having a 1 × magnification (ie, ± 1 ×). Each of the projection lens 72 and the projection lens 720 may be an enlargement optical system having an enlargement magnification.

The numerical aperture of each projection lens 72 on the light emitting device 71 side is smaller than the numerical aperture of each projection lens 72 on the photoelectric conversion element 73 side. However, the numerical aperture of each projection lens 72 on the light emitting device 71 side may be larger than the numerical aperture of each projection lens 72 on the photoelectric conversion element 73 side. The numerical aperture of each projection lens 72 on the light emitting device 71 side may be the same as the numerical aperture of each projection lens 72 on the photoelectric conversion element 73 side.

Similarly, the numerical aperture of the projection lens 720 on the light emitting device 71 side is smaller than the numerical aperture of the projection lens 720 on the photoelectric conversion element 73 side. However, the numerical aperture of the projection lens 720 on the light emitting device 71 side may be larger than the numerical aperture of the projection lens 720 on the photoelectric conversion element 73 side. The numerical aperture of the projection lens 720 on the light emitting device 71 side may be the same as the numerical aperture of the projection lens 720 on the photoelectric conversion element 73 side.

The photoelectric conversion element 73 is capable of converting a plurality of lights EL from the plurality of

projection lenses

72 or 720 into a plurality of electron beams EB. The photoelectric conversion element 73 can generate a plurality of electron beams EB from a plurality of lights EL from the plurality of

projection lenses

72 or 720. In order to convert the plurality of lights EL into the plurality of electron beams EB, the photoelectric conversion element 73 includes a plate member 731, a light shielding film 732, and an alkali photoelectric layer 733. The photoelectric conversion element 73 is a structure in which a plate member 731, a light shielding film 732, and an alkali photoelectric layer 733 are integrated.

The plate member 731 is a plate-like member through which a plurality of lights EL can pass. The plate member 731 is a member made of, for example, quartz glass, but may be a member made of another material.

The light shielding film 732 is formed on the lower surface of the plate member 731. The light shielding film 732 can shield a plurality of lights EL. The light shielding film 732 is, for example, a film of chromium or the like. In the example of FIG. 3A, a plurality of apertures 7321 corresponding to the plurality of projection lenses 72 are formed in the light shielding film 732. Therefore, the number of the plurality of apertures 7321 is equal to the number of the plurality of projection lenses 72. That is, when the electron beam generation device 7 includes 72,000 projection lenses 72, the light shielding film 732 may have 72,000 apertures 7321. In the example of FIG. 3B, a plurality of apertures 7321 corresponding to the plurality of light emitting devices 71 are formed in the light shielding film 732. Therefore, the number of the plurality of apertures 7321 is equal to the number of the plurality of light emitting devices 71. That is, when the electron beam generation device 7 includes 72,000 light emitting devices 71, the light shielding film 732 may have 72,000 apertures 7321.

3A, each aperture 7321 is formed at a position where the light EL from the projection lens 72 corresponding to each aperture 7321 is incident. As a result, the light EL from each projection lens 72 enters the aperture 7321 corresponding to each projection lens 72 via the plate member 731. That is, each projection lens 72 projects the light EL onto the photoelectric conversion element 73 such that the light EL from each projection lens 72 enters the aperture 7321 corresponding to the projection lens 72. At this time, each projection lens 72 projects the light EL onto the photoelectric conversion element 73 such that the light EL having a cross section slightly larger than the aperture 7321 is incident on the aperture 7321.

However, when one projection lens 720 corresponds to two or more light emitting devices 71 as shown in FIG. 3B, two or more lights EL from one projection lens 720 The light may be incident on one or more apertures 7321, respectively. Alternatively, even when one

projection lens

72 or 720 corresponds to one light emitting device 71, one light EL from one

projection lens

72 or 720 is applied to each of two or more apertures 7321. It may be incident. In this case, each projection lens 72 or the projection lens 720 converts the light EL from the photoelectric conversion element 73 so that the light EL from the projection lens 72 or the projection lens 720 forms a beam spot over two or more apertures 7321. May be projected. In these cases, the number of the plurality of apertures 7321 may be larger than the number of the plurality of projection lenses 72 or the projection lenses 720.

The alkaline photoelectric layer 733 is formed on the lower surface of the plate member 731 where the aperture 7321 is formed (that is, the portion where the light shielding film 732 is not formed) and on the lower surface of the light shielding film 732. The alkali photoelectric layer 733 is a multi-alkali photocathode using two or more kinds of alkali metals. The multi-alkali photocathode is a photocathode having high durability, capable of generating electrons with green light having a wavelength of 500 nm, and having a high quantum efficiency QE of the photoelectric effect (for example, about 10%). In the present embodiment, since the alkali photoelectric layer 733 is used as an electron gun that generates the electron beam EB by the photoelectric effect of the light EL, a high-efficiency one having a conversion efficiency of about 10 [mA / W] is used. Is also good. The electron emission surface of the alkali photoelectric layer 733 is the lower surface of the alkali photoelectric layer 733 (that is, the surface opposite to the surface facing the plate member 731).

The light EL from each projection lens 72 or the projection lens 720 is incident on the alkali photoelectric layer 733 via the plate member 731 and the aperture 7321 corresponding to each projection lens 72. At this time, each projection lens 72 transfers the image of the light emitting surface (for example, light emission surface 719) of the light emitting device 71 corresponding to each projection lens 72 via the plate member 731 and the aperture 7321 corresponding to each projection lens 72. Is formed on the alkaline photoelectric layer 733. As a result, the electron beam EB having a cross section corresponding to the shape of the aperture 7321 is emitted downward from the alkali photoelectric layer 733 by the photoelectric effect (that is, photoelectric conversion). At this time, since the alkali photoelectric layer 733 includes the plurality of apertures 7321 and each of the plurality of apertures 7321 is irradiated with light EL, the alkali photoelectric layer 733 can emit a plurality of electron beams EB. That is, the electron emission surface (substantially, photoelectric conversion surface) 7330 of the alkali photoelectric layer 733 has a plurality of electron emission regions capable of emitting a plurality of electron beams EB at positions corresponding to the plurality of apertures 7321, respectively. 7331 is set. On the electron emission surface 7330, a plurality of electron emission regions 7331 each of which can function as an electron beam source are set. For example, when 72,000 apertures 7321 are formed, 72000 electron emission regions 7331 may be set on the electron emission surface 7330. In this case, a first electron emission region 7331 is set at a first position on the electron emission surface 7330 corresponding to the first aperture 7321, and a second electron emission region 7331 on the electron emission surface 7330 corresponding to the second aperture 7321 is set. The second electron-emitting region 7331 is set at a position (that is, a position different from (that is, distant from) the first position), and a second position (on the electron-emitting surface 7330 corresponding to the third aperture 7321). That is, the third electron-emitting region 7331 is set at a position different from (ie, separated from) the first and second positions,..., K-th (where K indicates the number of apertures 7321). ) Is set at the K-th position on the electron-emitting surface 7330 corresponding to the aperture 7321 (that is, a position different from (ie, distant from) the first to (K−1) -th positions). Is .

Each electron emission region 7331 emits an electron beam EB when the light emitting device 71 corresponding to each electron emission region 7331 emits light EL. On the other hand, each electron emission region 7331 does not emit the electron beam EB when the light emitting device 71 corresponding to each electron emission region 7331 does not emit light EL. Therefore, if the control device 4 individually controls the light emitting states of the plurality of light emitting devices 71, the on / off states of the plurality of electron beams EB can be individually controlled.

(1-3) Structure of Electron Beam Optical System 8 Next, the structure of the electron beam optical system 8 will be described with reference to FIG. FIG. 8 is a sectional view showing the structure of the electron beam optical system 8.

As shown in FIG. 8, the electron beam optical system 8 includes a housing 81, an accelerator 82, a focusing lens 83, an aperture plate 84, an objective lens 85, and a reflected electron detection device 86.

The housing 81 is a cylindrical housing (in other words, a column cell) that can shield an electromagnetic field. The upper end of the housing 81 is connected to the lower surface of the base plate 61. An accelerator 82, a focusing lens 83, an aperture plate 84, and an objective lens 85 are housed in an internal space 811 of the housing 81. However, at least a part of the accelerator 82, the focusing lens 83, the aperture plate 84, and the objective lens 85 may be arranged outside the housing 81.

少なくとも In the internal space 811 of the housing 81, at least a part (particularly, the alkali photoelectric layer 733) of the above-described electron beam generator 7 is arranged. Further, the internal space 811 is a space in which a plurality of electron beams EB emitted from the electron beam generation device 7 propagate. For this reason, the internal space 811 of the housing 81 is a vacuum space so that the alkali photoelectric layer 73 and the electron beam EB are not exposed to the atmospheric pressure environment. The degree of vacuum in the internal space 811 may be higher than the degree of vacuum in the vacuum chamber 64 outside the housing 81. The evacuation of the internal space 811 and the evacuation of the vacuum chamber 64 may be performed separately. Note that the electron beam generating device 7 arranged in the through hole 612 of the base plate 61 serves as a vacuum partition between the internal space 811 and the external space of the housing 81 (particularly, the external space of the stage chamber 1 and a non-vacuum space). May also be used.

The accelerator 82 is an extraction electrode for accelerating a plurality of electron beams EB emitted from the electron beam generator 7. However, when it is not necessary to accelerate a plurality of electron beams EB, the electron beam optical system 8 may not include the accelerator 82.

The focusing lens 83 is an electronic lens for converging a plurality of electron beams EB. The focusing lens 83 may be an electric field lens that applies an electric field to the plurality of electron beams EB, or may be a magnetic lens that applies a magnetic field to the plurality of electron beams EB.

The aperture plate 84 is a diaphragm mechanism in which an opening 841 through which a plurality of electron beams EB converged by the focusing lens 83 can pass is formed.

The objective lens 85 is an electronic lens capable of forming an image of the plurality of electron beams EB on the surface of the wafer W at a predetermined reduction magnification. As a result, the plurality of electron beams EB are emitted toward the wafer W from the electron beam optical system 8 via the emission ports 811 formed at the lower end of the housing 81. The plurality of electron beams EB emitted from the electron beam optical system 8 are applied to the wafer W through the through holes 631 of the cooling plate 63. Note that the objective lens 85 may be an electric field lens that applies an electric field to the plurality of electron beams EB, or a magnetic field lens that applies a magnetic field to the plurality of electron beams EB. The reduction magnification of the electron beam optical system 8 including the objective lens 85 is arbitrary, but may be, for example, 1/200, 1/120 or 1/80.

The backscattered electron detection device 86 is arranged below the emission port 811 of the housing 81 at a position that does not overlap with the paths of the plurality of electron beams EB. In the example shown in FIG. 8, the backscattered electron detection device 86 is arranged inside the through hole 631 of the cooling plate 63. The backscattered electron detector 86 is a semiconductor backscattered electron detector using a pn junction or pin junction semiconductor. The backscattered electron detector 86 detects, for example, backscattered electrons generated from an alignment mark or the like formed on the wafer W in order to align the wafer W. The detection result of the backscattered electron detection device 86 is output to the control device 4.

The electron beam optical system 8 determines the amount of rotation (that is, the position in the θZ direction) of an image formed by the electron beam EB on a predetermined optical surface (for example, an optical surface that intersects the optical path of the electron beam EB). An adjuster (for example, an electromagnetic lens) that can adjust any one of the magnification and the focal position corresponding to the imaging position may be included. The electron beam optical system 8 may include, for example, a deflector capable of deflecting the electron beam EB.

In the present embodiment, since the optical system 3 includes the plurality of electron beam devices 5 (that is, the plurality of electron beam optical systems 8), the irradiation of the electron beam EB is performed by the plurality of electron beam devices 5. Performed in parallel. Here, the plurality of electron beam devices 5 correspond one-to-one to a plurality of shot areas on the wafer W. However, the number of the electron beam devices 5 may be larger or smaller than the number of the shot areas S. Each electron beam device 5 can irradiate a plurality of electron beams EB in a rectangular (or other shape) irradiation region. Therefore, the plurality of electron beam devices 5 can simultaneously irradiate a plurality of electron beams EB to a plurality of irradiation regions respectively set on a plurality of shot regions on the wafer W. When each of the plurality of electron beam devices 5 irradiates the electron beam EB while relatively moving the wafer W to such an irradiation region, a plurality of shot regions on the wafer W are exposed in parallel. As a result, the exposure apparatus EX can expose the wafer W at a relatively high throughput.

As an example, as described above, when the exposure apparatus EX includes 45 electron beam devices 5 and targets a wafer W having a diameter of 300 mm as an exposure target, the optical axis of the electron beam device 5 ( That is, the arrangement interval of the optical axis AX) of the electron beam optical system 8 may be 43 mm. In this case, the shot area exposed by one electron beam device 5 is a rectangular area having a maximum size of 43 mm × 43 mm. Therefore, as described above, if the movement stroke of the wafer stage 22 is as large as 50 mm, all the shot areas can be appropriately exposed. However, the number of the electron beam devices 5 is not limited to 45, and may be set based on the diameter of the wafer W, the stroke of the wafer stage 22, and the like.

(2) Exposure Operation by Exposure Apparatus Next, an exposure operation (that is, an exposure method) by the exposure apparatus EX will be described. As described above, the exposure apparatus EX is used for complementary lithography. Therefore, prior to exposure of the wafer W by the exposure apparatus EX, an exposure apparatus that exposes the wafer W using light (for example, a liquid that exposes the wafer W using light from an ArF light source, a KrF light source, or another light source). A line and space pattern (hereinafter, referred to as an “L / S pattern”) is formed on the wafer W by an immersion exposure apparatus or a dry exposure apparatus. Thereafter, an electron beam resist is applied to the wafer W on which the L / S pattern has been formed by a coater or the like. The exposure apparatus EX exposes the wafer W on which the L / S pattern is formed and the electron beam resist is applied.

In exposing the wafer W, first, the wafer stage 22 is loaded with the wafer W in the stage chamber 1. The wafer stage 22 holds (eg, sucks) the loaded wafer W.

After that, the electron beam device 5 corresponding to each shot area, with respect to at least one alignment mark formed on a scribe line (that is, a street line) corresponding to each of the plurality of shot areas on the wafer W, Irradiate EB. Thereafter, the backscattered electron detection device 86 detects backscattered electrons from at least one alignment mark. Thereafter, the control device 4 performs all-point alignment measurement of the wafer W based on the detection result of the backscattered electron detection device 86 (that is, the detection result of the alignment mark). The exposure apparatus EX starts exposure of a plurality of shot areas on the wafer W by the plurality of electron beam devices 5 based on the result of the all-point alignment measurement. That is, the exposure apparatus EX starts exposure for forming a cut pattern on the L / S pattern formed on the wafer W and cutting the L / S pattern. For example, when forming a cut pattern for an L / S pattern having a periodic direction in the X-axis direction formed on the wafer W, the exposure apparatus EX moves the wafer W in the Y-axis direction under the control of the controller 4. The irradiation timing of the plurality of electron beams EB is controlled while scanning. Note that the exposure apparatus EX detects alignment marks formed corresponding to some shot areas of the wafer W without performing all-point alignment measurement, and performs exposure of a plurality of shot areas based on the detection result. You may start. Further, the detection of the alignment mark may be performed outside the stage chamber 1. In this case, the exposure apparatus EX does not need to detect the alignment mark inside the stage chamber 1.

Here, an exposure sequence using the electron beam generator 7 (particularly, a plurality of light emitting devices 71) will be described. Here, a large number of pixel areas (for example, light EL passing through each aperture 7321) are two-dimensionally arranged adjacent to each other in a certain area on the wafer W so as to be arranged along the X-axis direction and the Y-axis direction. An exposure sequence will be described in which a pixel region (for example, a region of 10 nm square) which coincides with the irradiation region of the electron beam EB caused by the above is virtually set and all the pixel regions are exposed. Further, here, the electron beam generator 7 includes 72,000 light emitting devices 71, and a light emitting device array including 6000 light emitting devices 71 arranged at a predetermined pitch in the X-axis direction has a predetermined pitch in the Y-axis direction. The description will be given using an example in which 72000 light emitting devices 71 are arranged so that 12 light emitting devices are arranged. Hereinafter, the twelve light emitting device arrays are referred to as light emitting device array A, light emitting device array B,..., And light emitting device array L, respectively.

Explaining by focusing on the light emitting device array A, exposure using the light emitting device array A is started for 6000 continuous pixel regions of a certain row (referred to as a k-th row) arranged in the X-axis direction on the wafer W. Is done. At the start of the exposure, the electron beam EB corresponding to the light EL from the light emitting device array A is at the home position. Then, the exposure apparatus EX deflects the electron beam EB from the home position to the + Y direction by following the movement (ie, scanning) of the wafer stage 22 in the + Y direction (or the −Y direction, the same applies hereinafter) from the start of exposure. Exposure to the same 6000 pixel regions is continued. As a result, for example, if exposure of 6000 pixel regions is completed in Ta seconds, the wafer stage 22 is moving at V nanometers per second, for example, Ta × V nanometers. Here, it is assumed that Ta × V = 96 nanometers for simplification of the description.

Subsequently, the exposure apparatus EX returns the electron beam EB to the home position while the wafer stage 22 is moving at a speed of V nanometers per second by 24 nanometers in the + Y direction. At this time, the electron beam device 5 does not actually irradiate the electron beam EB so that the electron beam resist actually applied to the wafer W is not exposed.

At this time, since the wafer stage 22 has advanced by 120 nanometers in the + Y direction from the exposure start time, at this time, the 6000 pixel regions in the (k + 12) th row are replaced by 6000 pixels in the kth row at the exposure start time. At the same position as the pixel areas. Thus, the exposure apparatus EX exposes 6000 consecutive pixel regions in the (k + 12) th row in the same manner as when exposing 6000 pixel regions in the kth row.

In parallel with the exposure of the 6000 pixel regions in the k-th row by the light-emitting device array A, the 6000 pixel regions in the (k + 1) -th to (k + 11) -th rows are shifted from the light-emitting device array B to the light-emitting device array. L respectively. In parallel with the exposure of the 6000 pixel regions in the (k + 12) th row by the device array A, the 6000 pixel regions in the (k + 13) th to (k + 23) th rows are shifted from the light emitting device array B to the light emitting device. Each is exposed by the array L.

In this manner, the exposure apparatus EX moves the wafer stage 22 in the Y-axis direction with respect to a region having a width of 60 micrometers in the X-axis direction on the wafer W (that is, a region in which 6000 pixel regions are distributed). Exposure can be performed while scanning. After that, the exposure apparatus EX moves the wafer stage 22 stepwise by 60 micrometers in the X-axis direction and then performs the same scan exposure, so that the exposed region having a width of 60 micrometers in the X-axis direction is exposed. Can be exposed to a new 60 micrometer wide area adjacent to. Therefore, the exposure apparatus EX alternately performs scanning exposure for exposing the wafer W by deflecting the electron beam EB while moving the wafer stage 22 in the Y-axis direction, and stepping for moving the wafer stage 22 in the X-axis direction. By repeating this, exposure of one shot area on the wafer W can be performed using one electron beam device 5. In addition, since the plurality of electron beam devices 5 actually expose different shot areas on the wafer W in parallel, the exposure device EX can expose the entire surface of the wafer W.

Further, during the scanning exposure, the exposure apparatus EX switches the light emitting state (that is, on / off) of each of the plurality of light emitting devices 71 as appropriate, so that the cut pattern is formed on the L / S pattern. While irradiating the electron beam EB, the electron beam EB is not irradiated to a portion where a cut pattern is not required to be formed for the L / S pattern. In other words, while the electron emission region 7331 corresponding to the position where the cut pattern is to be formed among the plurality of electron emission regions 7331 emits the electron beam EB, the cut pattern may not be formed among the plurality of electron emission regions 7331. The electron emission region 7331 corresponding to a good place does not emit the electron beam EB. As a result, the exposure apparatus EX can appropriately form a cut pattern for the L / S pattern formed on the wafer W. That is, the exposure apparatus EX can appropriately cut the L / S pattern formed on the wafer W.

(3) Technical Effect of Exposure Apparatus EX In the present embodiment, the exposure apparatus EX can switch on / off the plurality of electron beams EB by switching on / off of the plurality of light emitting devices 71. For this reason, the exposure apparatus EX can appropriately form a cut pattern for the L / S pattern formed on the wafer W. For example, the exposure apparatus EX can appropriately form a cut pattern at a desired position on a desired line among L / S patterns formed in each of a plurality of shot areas set on the wafer W. .

{Furthermore, in this embodiment, the exposure apparatus EX does not have to switch on / off the plurality of electron beams EB by deflecting the plurality of electron beams EB using the blanking aperture. For this reason, generation of unnecessary electrons (for example, electrons that do not contribute to exposure of the wafer W) in the blanking aperture is suppressed. Furthermore, a blanking aperture that can be a source of complicated distortion due to charge-up or magnetization is fundamentally eliminated. Therefore, a long-term unstable element caused by the presence of the blanking aperture is eliminated from the exposure apparatus EX.

Further, in the present embodiment, the light emitting device 71 included in the exposure apparatus EX can control the light distribution characteristics (in particular, the spread angle θ) of the emitted light EL by using the diffraction layer 716. More specifically, the light emitting device 71 can emit the light EL at an appropriate spread angle θ by making the spread angle θ smaller than when the spread angle θ is not controlled. For this reason, the electron beam generation device 7 generates a plurality of electron beams EB as compared with the case where the light distribution characteristics of the light EL are not controlled (specifically, the case where the light emitting device 71 does not include the diffraction layer 716). Properly (eg, efficiently) generated. Hereinafter, the reason will be described.

First, when the light emitting device 71 emits the light EL at the spread angle θ larger than the appropriate spread angle θ, the light-emitting device 71 emits light EL at the appropriate spread angle θ, and There is a high possibility that the ratio of the light EL that is not irradiated to a desired region of the element 73 (for example, a region corresponding to the aperture 7321) increases. This is because when the light emitting device 71 emits the light EL at the spread angle θ larger than the appropriate spread angle θ, the light emitting device 71 emits the light EL at the appropriate spread angle θ, This is because there is a high possibility that the ratio of the light EL emitted in a direction in which the

lens

72 or 720 cannot capture the light EL increases. Further, when the projection lens 72 or 720 (or a condensing optical system such as a projection optical system) is not interposed between the light emitting device 71 and the photoelectric conversion element 73, the light emitting device 71 is set at an appropriate spread angle θ. When the light EL is emitted at a large divergence angle θ, the light EL is emitted in a direction in which a desired region of the photoelectric conversion element 73 does not exist, as compared with the case where the light emitting device 71 emits the light EL at an appropriate divergence angle θ. The possibility that the ratio of the light EL increases is increased. Therefore, when the light emitting device 71 emits the light EL at the spread angle θ larger than the appropriate spread angle θ, the possibility that the ratio of the light EL that is not irradiated to the alkali photoelectric layer 733 increases is increased. That is, when the light emitting device 71 emits the light EL at the spread angle θ larger than the appropriate spread angle θ, the possibility that the proportion of the light EL not contributing to the generation of the electron beam EB increases. Conversely, if the light emitting device 71 emits the light EL at an appropriate spread angle θ, the proportion of the light EL that contributes to the generation of the electron beam EB should increase. The higher the proportion of the light EL that contributes to the generation of the electron beam EB, the higher the efficiency of generating the electron beam EB. Therefore, the exposure apparatus EX can appropriately (for example, efficiently) generate the plurality of electron beams EB.

In addition, as described above, in the electron beam generator 7, the light EL emitted from the light emitting device 71 enters the photoelectric conversion element 73 via the projection lens 72. Therefore, the light EL emitted so as to diverge from the light emitting device 71 enters the photoelectric conversion element 73 via the projection lens 72 so as to converge toward the photoelectric conversion element 73. In this case, it is desired that the light emitting device 71 emits the light EL so that the beam profile of the light EL has desired characteristics at the position of the photoelectric conversion element 73. For example, the light-emitting device 71 is configured such that the beamlet shape of the light EL at the position of the photoelectric conversion element 73 has a desired shape (for example, a top-hat shape at which the intensity is substantially equal at the position corresponding to the aperture 7321). It is desired to emit light EL. For this purpose, it is necessary to satisfy the restriction on the convergence angle of the light EL from the projection lens 72 toward the photoelectric conversion element 73 (substantially, the numerical aperture of the projection lens 72 on the photoelectric conversion element 73 side). The numerical aperture of the projection lens 72 on the photoelectric conversion element 73 side depends on the magnification of the projection lens 72 and the numerical aperture of the projection lens 72 on the light emitting device 71 side. Therefore, when the numerical aperture of the projection lens 72 on the photoelectric conversion element 73 side and the magnification of the projection lens 72 are determined, the numerical aperture of the projection lens 72 on the light emitting device 71 side is also uniquely determined. In this case, if the light emitting device 71 does not emit the light EL at the spread angle θ corresponding to the numerical aperture of the projection lens 72 on the light emitting device 71 side, the ratio of the light EL that does not contribute to the generation of the electron beam EB as described above. Is likely to increase. In such a situation, in the present embodiment, the spread angle θ of the light EL emitted from the light emitting device 71 can be controlled. For this reason, the light emitting device 71 can emit the light EL at the spread angle θ corresponding to the numerical aperture of the projection lens 72 on the light emitting device 71 side. That is, the light emitting device 71 can emit the light EL such that the beam profile of the light EL has desired characteristics at the position of the photoelectric conversion element 73. As a result, the exposure apparatus EX can appropriately (for example, efficiently) generate the plurality of electron beams EB.

Further, in the present embodiment, in the light emitting device 71 provided in the exposure apparatus EX, the wavelength distribution of the light EL1 incident on the diffraction layer 716 via the reflection layers 714 and 715 is the wavelength distribution of the light EL0 generated in the quantum well layer 711. And different. Specifically, the light EL1 is light having a narrower band than the light EL0. As a result, the light emitting device 71 can emit the light EL having a narrow band via the diffraction layer 716. For this reason, the influence of chromatic aberration on the projection lens 72 and the photoelectric conversion element 73 is reduced.

In addition, considering that the energy of the light EL is inversely proportional to the wavelength, the variation in the energy of the narrowed light EL is smaller than the variation in the energy of the light EL not narrowed. For this reason, the energy variation of the electron beam EB generated from the light EL having the small energy variation is also small. Therefore, the exposure apparatus EX can generate the electron beam EB with small energy fluctuation (that is, stable). That is, the exposure apparatus EX can appropriately expose the wafer W by irradiating the wafer W with the stable electron beam EB.

In addition, as described above, the diffractive layer 716 diffracts the light component in the diffraction wavelength range to easily set the divergence angle θ of the light component in the diffraction wavelength range to a desired angle. Diffraction of the light component in the wavelength range makes it difficult to set the spread angle θ of the light component in the wavelength range other than the diffraction wavelength range to a desired angle (for example, even if the light component in the wavelength range other than the diffraction wavelength range is diffracted). (The spread angle θ of the light component in a wavelength range other than the diffraction wavelength range is set to an angle different from the desired angle) in some cases. Therefore, if the light EL0 generated in the quantum well layer 711 does not pass through the reflection layers 714 and 715 and enters the diffraction layer 716, the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 may be deteriorated. . On the other hand, in the present embodiment, the light EL1 (that is, the light EL1 in which the light component in the resonance wavelength range is relatively amplified) enters the diffraction layer 716 via the reflection layers 714 and 715. come. Therefore, if the resonance wavelength range and the diffraction wavelength range at least partially overlap, the diffraction layer 716 appropriately diffracts the light EL1 incident from the reflection layer 715 and emits the light EL1 from the light emitting device 71. The spread angle θ of the light EL can be appropriately set to a desired angle. That is, the reflection layers 714 and 715 contribute to the improvement of the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 while contributing to the resonance (that is, narrowing of the band) of the light EL. Therefore, the exposure apparatus EX including the light emitting device 71 including both the reflection layers 714 and 715 and the diffraction layer 716 is compared with the exposure apparatus of the comparative example including the diffraction layer 716 but not including the reflection layers 714 and 715. In addition, the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716 is further improved. For this reason, the exposure apparatus EX can more appropriately receive the above-described technical effects caused by the diffraction layer 716 as compared with the exposure apparatus of the comparative example. That is, the exposure apparatus EX can generate the plurality of electron beams EB more appropriately (for example, more efficiently) than the exposure apparatus of the comparative example.

(4) Modified Example Next, a modified example of the light emitting device 71 will be described.

(4-1) First Modification First , a light emitting device 71a according to a first modification will be described with reference to FIGS. FIG. 9 is a cross-sectional view illustrating a structure of a light emitting device 71a according to a first modification. FIG. 10 is a cross-sectional view illustrating another example of the structure of the light emitting device 71a according to the first modified example.

The light emitting device 71a of the first modified example utilizes the refraction of the light EL1 instead of controlling the light distribution characteristics of the light EL using the diffraction of the light EL1 as compared with the light emitting device 71 described above. The difference is that the light distribution characteristics of the light EL are controlled.

In order to control the light distribution characteristics of the light EL using the refraction of the light EL1, the light emitting device 71a differs from the light emitting device 71a in that a microlens 716a is provided instead of the diffraction layer 716 as shown in FIG. I have. Other features of the light emitting device 71a may be the same as other features of the light emitting device 71.

The microlens 716a is arranged at the interface between the space in which the light EL emitted from the light emitting device 71a propagates and the light emitting device 71a. Therefore, the light emitting device 71a emits the light EL from the micro lens 716a toward the space outside the light emitting device 71a. Therefore, at least a part of the surface of the microlens 716a (particularly, the lower surface facing the projection lens 72 side) forms a light exit surface 719 from which the light EL is emitted. The surface of the microlens 716a (particularly, the lower surface facing the projection lens 72) includes a light exit surface 719.

The microlens 716a is arranged such that the light EL0 from the adjacent reflective layer 715 enters the microlens 716a without passing through a space (for example, at least one of a vacuum space and a gas space). In the first modification, the light EL0 incident on the microlens 716a is referred to as “light EL1” and is distinguished from the light EL0 before entering the microlens 716a (for example, the light EL0 generated in the quantum well layer 711). I do. In this case, for example, the microlens 716a is arranged so that a space (for example, at least one of a vacuum space and a gas space) does not intervene with the adjacent reflective layer 715. However, as shown in FIG. 10, the microlenses 716a are arranged such that the light EL1 from the adjacent reflective layer 715 enters the microlenses 716a via a space (for example, at least one of a vacuum space and a gas space). It may be. In this case, for example, the microlenses 716a may be arranged so that a space (for example, at least one of a vacuum space and a gas space) is interposed between the microlens 716a and the adjacent reflective layer 715.

The microlens 716a refracts the light EL1 and controls the light distribution characteristics of the light EL from the light emitting device 71a. That is, the microlens 716a can function as an optical element for controlling the light distribution characteristics of the light EL using the refraction of the light EL1. The control mode of the light distribution characteristics by the microlenses 716a in the first modification is the same as the control mode of the light distribution characteristics by the diffraction layer 716 described above. That is, the microlens 716a may refract the light EL1 such that the spread angle θ of the light EL is smaller than when the light EL1 is not refracted. The microlens 716a may refract the light EL1 such that the light EL1 has a desired divergence angle by reducing the divergence angle θ of the light EL as compared with a case where the light EL1 is not refracted. For this reason, a detailed description of the manner of controlling the light distribution characteristics by the microlenses 716a is omitted.

The light emitting device 71 includes a single microlens 716a. However, as shown in FIG. 11, the light emitting device 71a may include a plurality of microlenses 716a. In this case, the plurality of microlenses 716a cooperate to control the light distribution characteristics of the light EL. FIG. 11 shows an example in which the light emitting device 71a includes two microlenses 716a.

The exposure apparatus EX including the light emitting device 71a of the first modified example in place of the light emitting device 71 can also enjoy the same effects as the above-described exposure apparatus EX including the light emitting device 71. . Further, in the first modified example, since the light EL1 is light whose wavelength distribution is narrower than that of the light EL0, it is difficult to control the light distribution characteristics due to the chromatic aberration of the microlens 716a. The effect of being reduced can also be enjoyed.

The light emitting device 71a may include a diffraction layer 716 in addition to the micro lens 716a. In this case, the light emitting device 71a may be able to more appropriately control the light distribution characteristics of the light EL.

(4-2) Second Modification Next, a light emitting device 71b according to a second modification will be described with reference to FIG. FIG. 12 is a cross-sectional view illustrating a structure of a light emitting device 71b according to a second modification.

The light emitting device 71b of the second modified example utilizes the reflection of the light EL1 instead of controlling the light distribution characteristics of the light EL using the diffraction of the light EL1 as compared with the light emitting device 71 described above. The difference is that the light distribution characteristics of the light EL are controlled.

In order to control the light distribution characteristics of the light EL using the reflection of the light EL1, the light emitting device 71b differs from the light emitting device 71b in that the light emitting device 71b includes a reflection layer 716b instead of the diffraction layer 716 as shown in FIG. I have. Other features of the light emitting device 71b may be the same as other features of the light emitting device 71. However, since the light emitting device 71b does not include the diffraction layer 716, the light emitting surface 719 of the light emitting device 71b is configured by at least a part of the surface of the reflective layer 715 (particularly, the lower surface facing the projection lens 72). . The surface of the reflective layer 715 (particularly, the lower surface facing the projection lens 72) includes a light exit surface 719. Alternatively, the light exit surface 719 may be constituted by at least a part of another layer (not shown) formed on the surface of the reflective layer 715. Another layer (not shown) formed on the surface of the reflective layer 715 may include the light exit surface 719.

The reflection layer 716b reflects the light EL0 generated in the quantum well layer 711 and / or the light EL0 reflected by the reflection layer 715, and controls the light distribution characteristics of the light EL from the light emitting device 71b. That is, the reflective layer 716b can function as an optical element for controlling the light distribution characteristics of the light EL using the reflection of the light EL0. Note that the control mode of the light distribution characteristics by the reflective layer 716b in the second modification is the same as the control mode of the light distribution characteristics by the diffraction layer 716 described above. That is, the reflection layer 716b may reflect the light EL0 so that the spread angle θ of the light EL is smaller than that in the case where the light EL0 is not reflected. The reflection layer 716b may reflect the light EL0 such that the spread angle θ of the light EL becomes smaller than the case where the light EL0 is not reflected, so that the light EL0 has a desired angle. Therefore, a detailed description of the manner of controlling the light distribution characteristics by the reflective layer 716b is omitted.

The reflection layer 716b may be arranged at a position where the light EL0 can be reflected such that the spread angle θ of the light EL becomes small (and further, becomes a desired angle). In the example shown in FIG. 12, the reflection layer 716b is disposed on the side opposite to the light exit surface 719 when viewed from the quantum well layer 711. Of course, the reflective layer 716b may be arranged at a position different from the position shown in FIG.

In the example shown in FIG. 12, since the reflection layer 716b is arranged on the opposite side to the light exit surface 719 when viewed from the quantum well layer 711, the reflection layer 716b reflects the light EL0 to resonate as described above. The reflective layer 714 may be used. That is, the reflection layer 716b is used as an optical element for reflecting the light EL0 to resonate (that is, an optical element for narrowing the band of the light EL) and an optical element for controlling the light distribution characteristics of the light EL. They may be combined. For this reason, in the example shown in FIG. 12, the light emitting device 71b does not include the above-described reflective layer 714. Of course, the light emitting device 71b may include the reflection layer 714 separately from the reflection layer 716b.

The reflective layer 716b may be made of any material as long as it can reflect the light EL0. For example, the reflective layer 716b may be made of a metal material. For example, the reflective layer 716b may be made of a semiconductor material, like the reflective layer 715 (further, the reflective layer 714 described above).

The reflective layer 716b may have a shape capable of reflecting the light EL0 such that the spread angle θ of the light EL is reduced (and further, becomes a desired angle). For example, the reflection surface of the reflection layer 716b may include a flat surface. For example, the reflection surface of the reflection layer 716b may include a plane orthogonal to the optical axis of the electron beam device 5 (typically, the optical axis AX of the electron beam optical system 8). For example, the reflection surface of the reflection layer 716b may include a plane inclined with respect to the optical axis of the electron beam device 5. For example, the reflection surface of the reflection layer 716b may include a plane parallel to the optical axis of the electron beam device 5. For example, the reflection surface of the reflection layer 716b may include a curved surface.

The exposure apparatus EX including the light emitting device 71b of the second modification in place of the light emitting device 71 can also enjoy the same effects as those that can be enjoyed by the exposure apparatus EX including the light emitting device 71 described above. .

The light emitting device 71b may include at least one of the diffraction layer 716 and the microlens 716a in addition to the reflection layer 716b. In this case, the light emitting device 71b may be able to more appropriately control the light distribution characteristics of the light EL.

(4-3) Third Modification Next, a light emitting device 71c according to a third modification will be described with reference to FIG. FIG. 13 is a cross-sectional view illustrating a structure of a light emitting device 71c according to a third modification.

発光 As shown in FIG. 13, the light emitting device 71c of the third modification is different from the light emitting device 71 described above in that the light emitting device 71c does not need to include the reflective layer 715. Other features of the light emitting device 71c may be the same as other features of the light emitting device 71.

(4) Even when the light emitting device 71c does not include the reflection layer 715, the light EL0 generated in the quantum well layer 711 is still reflected by the reflection layer 714. Therefore, the reflective layer 714 can function as a resonator even when not combined with the reflective layer 715. That is, even when the reflective layer 714 is not combined with the reflective layer 715, it is possible to narrow the band of the light EL. Therefore, the exposure apparatus EX including the light emitting device 71c of the third modified example in place of the light emitting device 71 also receives the same effects as those that can be obtained by the exposure apparatus EX including the light emitting device 71 described above. be able to.

In the third modification, similarly to the first or second modification, the light emitting device 71c may include at least one of the microlens 716a and the reflection layer 716b in addition to or instead of the diffraction layer 716. Good.

(4-4) Fourth Modification Next, a light emitting device 71d according to a fourth modification will be described with reference to FIG. FIG. 14 is a cross-sectional view illustrating a structure of a light emitting device 71d according to a fourth modification.

As shown in FIG. 14, the light emitting device 71d according to the fourth modification includes a quantum well layer 711, a cladding layer 712, and a reflective layer 714, similarly to the light emitting device 71 described above. The light emitting device 71d is different from the light emitting device 71 described above in that the light emitting device 71d includes a clad layer 713d instead of the clad layer 713. Furthermore, the light emitting device 71d is different from the light emitting device 71 described above in that the light emitting device 71d does not need to include the reflection layer 715 and the diffraction layer 716. The light emitting device 71d has a stacked structure in which a clad layer 713d, a quantum well layer 711, a clad layer 712, and a reflective layer 714 are stacked in this order when viewed from a light emitting surface 719 from which the light emitting device 71d emits light EL. I have. Other features of the light emitting device 71d may be the same as other features of the light emitting device 71. However, since the light emitting device 71d does not include the reflection layer 715 and the diffraction layer 716, the light emitting surface 719 of the light emitting device 71d is at least partially provided on the surface of the cladding layer 713d (in particular, the lower surface facing the projection lens 72 side). Composed of The cladding layer 713d includes a light exit surface 719.

The cladding layer 713d is different from the cladding layer 713 in that the cladding layer 713d includes an emission portion 7131d including a light emission surface 719 on the surface. The emission section 7131d is a part of the cladding layer 713d. The emitting portion 7131d is a portion of the cladding layer 713d facing the interface between the space in which the light EL emitted from the light emitting device 71d propagates and the light emitting device 71d.

The emission unit 7131d has a function similar to that of the diffraction unit 716 described above. That is, the emission unit 7131d can control the light distribution characteristics of the light EL from the light emitting device 71d by diffracting the light EL0 incident on the emission unit 7131d. Note that the control mode of the light distribution characteristics by the emission unit 7131d in the fourth modification is the same as the control mode of the light distribution characteristics by the diffraction layer 716 described above. That is, the emission unit 7131d may diffract the light EL0 so that the spread angle θ of the light EL is smaller than when the light EL0 is not diffracted. Therefore, a detailed description of a mode of controlling the light distribution characteristics by the emission unit 7131d is omitted.

The emission unit 7131d may have the same structure as the above-described diffraction unit 716 in order to diffract the light EL0. That is, the emission section 7131d may have a photonic crystal structure.

Considering that the emission section 7131d has the same function as the diffraction layer 716, the cladding layer 713d is substantially integrated with the cladding layer 713d and the diffraction layer 716 as compared with the cladding layer 713. It can be said that they are different. It can be said that the clad layer 713d is different from the clad layer 713 in that the clad layer 713d includes the diffraction layer 716. It can be said that the cladding layer 713d is different from the cladding layer 713 in that a part of the cladding layer 713d functions as the diffraction layer 716.

The exposure apparatus EX including the light emitting device 71d of the fourth modified example in place of the light emitting device 71 can also enjoy the same effects as the above-described exposure apparatus EX including the light emitting device 71. .

(4-5) Fifth Modification Next, a light emitting device 71e according to a fifth modification will be described with reference to FIG. FIG. 15 is a cross-sectional view illustrating a structure of a light emitting device 71e according to a fifth modification.

In the light emitting device 71 described above, the reflection layers 714 and 715 are used to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. In other words, the light emitting device 71 changes the wavelength distribution of the light EL1 and the wavelength distribution of the light EL0 by utilizing the reflection of the light EL0. On the other hand, the light emitting device 71e of the fifth modification uses the diffraction of the light EL0 to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. I have.

In order to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 using the diffraction of the light EL0 and the wavelength distribution of the light EL0 generated in the quantum well layer 711, the light emitting device 71e has a structure as shown in FIG. The difference is that a diffraction layer 714e is provided instead of the reflection layers 714 and 715. Other features of the light emitting device 71e may be the same as other features of the light emitting device 71.

The diffraction layer 714 e changes the wavelength distribution of the light EL 1 incident on the diffraction layer 716 by diffracting the light EL 0 generated in the quantum well layer 711. The diffraction layer 714 e diffracts the light EL 0 so that the light EL 0 whose band has been narrowed as compared with the case where the light EL 0 is not diffracted enters the diffraction layer 716. For example, the diffractive layer 714e imparts one deflection angle to the light component in the resonance wavelength range and makes the light component incident on the diffraction layer 716, while imparting another deflection angle to the light component in a wavelength range different from the resonance wavelength range. The light EL0 may be diffracted so as not to be incident on the diffraction layer 716. As a result, also in the fifth modification, similarly to the light emitting device 71, the wavelength distribution of the light EL1 incident on the diffraction layer 716 using the diffraction of the light EL0 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. The wavelength distribution is different.

The diffraction layer 714e may diffract the light EL0 using a photonic crystal structure. That is, the diffraction layer 714e may be a layer having a photonic crystal structure. Since the photonic crystal structure has already been described with reference to FIGS. 7A and 7B when describing the diffraction layer 716, the detailed description thereof will be omitted. However, while the characteristics of the photonic crystal structure of the diffraction layer 716 are set from the viewpoint of controlling the light distribution characteristics of the light EL by diffracting the light EL1 by the diffraction layer 716, the diffraction layer 714e has The characteristic of the photonic crystal structure is that the wavelength distribution of the light EL1 incident on the diffraction layer 716 is different from the wavelength distribution of the light EL0 generated in the quantum well layer 711 by diffracting the light EL0 by the diffraction layer 714f. It is set from the viewpoint of. Therefore, the characteristics of the photonic crystal structure included in the diffraction layer 714e may be different from those of the diffraction layer 716. Specifically, the characteristic of the photonic crystal structure included in the diffraction layer 714e is that the light EL0 can be diffracted so that the light EL1 incident on the diffraction layer 716 becomes light with a narrower band than the light EL0. It may be set to possible desired characteristics.

The diffraction layer 714b is arranged at a position where the light EL0 can be diffracted so that the wavelength distribution of the light EL1 incident on the diffraction layer 716 can be appropriately controlled. In the example shown in FIG. 15, the diffraction layer 714e is arranged on the side opposite to the light exit surface 719 when viewed from the quantum well layer 711. Of course, the diffraction layer 714e may be arranged at a position different from the position shown in FIG.

The exposure apparatus EX including the light emitting device 71e of the fifth modified example in place of the light emitting device 71 can also enjoy the same effects as the above-described exposure apparatus EX including the light emitting device 71. .

The light emitting device 71e may include at least one of the reflection layers 714 and 715 in addition to the diffraction layer 714e. The light emitting device 71e utilizes the reflection of the light EL in addition to the diffraction of the light EL0 to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. Is also good. Alternatively, the light emitting device 71e may use the diffraction of the light EL0 in addition to or instead of using the diffraction of the light EL0 to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. Thus, the refraction of the light EL0 may be used. The light emitting device 71a of the first modified example to the light emitting device 71d of the fourth modified example also change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. Alternatively, in addition to or instead of using the reflection of the light EL0, at least one of diffraction and refraction of the light EL0 may be used.

Further, the light emitting device 71a of the first modification to the light emitting device 71d of the fourth modification described above may also include a diffraction layer 714e in addition to or instead of at least one of the reflective layers 714 and / or 715. .

(4-6) Sixth Modification Next, a light emitting device 71f according to a sixth modification will be described. The light emitting device 71f according to the sixth modification is different from the above-described light emitting device 71 including an LED in that the light emitting device 71f includes a laser diode (LD). That is, the light emitting device 71f is different from the above-described light emitting device 71 and the like which does not emit the laser-oscillated light EL in that it emits the laser-oscillated light EL. Hereinafter, the structure of the light emitting device 71f according to the sixth modification will be described with reference to FIG. FIG. 16 is a cross-sectional view illustrating a structure of a light emitting device 71f according to a sixth modification.

As shown in FIG. 16, the light emitting device 71f includes a quantum well layer 711f, a cladding layer 712f, a cladding layer 713f, a reflection layer 714f, a reflection layer 715f, and a diffraction layer 716f. That is, the laminated structure of the light emitting device 71f may be the same as the laminated structure of the light emitting device 71f described above. In this case, the light emitting device 71f may include a laser diode that can emit light EL in a direction perpendicular to the substrate. As an example of a laser diode capable of emitting light EL in a direction perpendicular to the substrate, a vertical cavity surface emitting laser (VCSEL) and a vertical external cavity emitting laser (VECSEL) are examples of a VCSEL (Vertical Cavity Surface Emitting Laser). ).

Unless otherwise specified, the features of the quantum well layer 711f, the cladding layer 712f, the cladding layer 713f, the reflection layer 714f, the reflection layer 715f, and the diffraction layer 716f are the same as those of the quantum well layer 711, the cladding layer 712, and the cladding layer described above. The characteristics of the layers 713, the reflection layers 714, the reflection layers 715, and the diffraction layers 716 may be the same. Therefore, the following description focuses on features that are particularly different from the light emitting device 71.

The reflection layers 714f and 715f mainly function as resonators for causing the light EL0 generated in the quantum well layer 711f to resonate (in particular, to cause laser oscillation). Therefore, the light-emitting device 71f emits the laser-emitted light EL (that is, laser light). Therefore, it can be said that the light emitting device 71f includes a laser oscillation element including the quantum well layer 711f, the cladding layer 712f, the cladding layer 713f, the reflection layer 714f, and the reflection layer 715f. Note that, since the light EL0 is laser-oscillated (that is, a standing wave is formed) by the reflection layers 714f and 715f, the reflection layers 714f and 715f transmit the light EL0 in a narrow band similarly to the reflection layers 714 and 715. It may also function as an optical element to be formed. Therefore, also in the sixth modified example, the wavelength distribution of the light EL0 incident on the diffraction layer 716f via the reflection layer 715f is different from the wavelength distribution of the light EL0 generated in the quantum well layer 711. Hereinafter, in the sixth modification, the light EL0 incident on the diffraction layer 716f is referred to as “light EL1” and is distinguished from the light EL0 before entering the diffraction layer 716f (for example, the light EL0 generated in the quantum well layer 711). I do.

も Also in the sixth modification, the laser EL light EL1 is emitted toward the space outside the light emitting device 71f via the diffraction layer 716f. That is, the light EL1 diffracted by the diffraction layer 716f (that is, the light distribution characteristics are controlled) is emitted from the light emitting device 71f as the light EL. When the light emitting device 71 is a laser diode, the phase of the first light emitted as a part of the light EL from the first position of the light emitting surface 719 is different from the first position of the light emitting surface 719. The phase of the second light emitted from the second position as another part of the light EL may have a correlation with each other. The phase of the first light emitted from the first position of the light emission surface 719 as a part of the light EL and the second light emitted from the second position different from the first position of the light emission surface 719 as another part of the light EL. The phase of the second light may have a correlation such that the first light and the second light are mutually coherent light.

However, in the sixth modified example, the diffractive layer 716f is configured so that the light EL1 from the reflective layer 715f (that is, the laser-oscillated light EL1) does not diffract the light EL1 so that the divergence angle θ of the light EL increases. Diffract EL1. That is, FIG. 17A is a cross-sectional view showing light EL emitted from the light emitting device 71f of the sixth modification (that is, light EL whose light distribution characteristics are controlled by the diffraction layer 716f), and the diffraction layer 716f is provided. FIG. 27 is a cross-sectional view showing light EL emitted from a light emitting device C71f of a comparative example different from the light emitting device 71f of the sixth modification in that no light distribution characteristics are controlled by the diffraction layer 716f. As shown in FIG. 17B, the spread angle θa of the light EL emitted from the light emitting device 71f is larger than the spread angle θb of the light EL emitted from the light emitting device C71f. In particular, the diffraction layer 716f may diffract the light EL1 such that the spread angle θ of the light EL is increased and the spread angle θ of the light EL becomes a desired angle. The characteristic of the diffraction layer 716f may be set to a desired characteristic that allows the light EL1 to be diffracted so that the spread angle θ of the light EL is larger than when the light EL1 is not diffracted. The characteristic of the diffraction layer 716f may be set to a desired characteristic capable of increasing the spread angle θ of the light EL and diffracting the light EL1 such that the spread angle θ of the light EL becomes a desired angle.

Similar to the diffraction layer 716, the diffraction layer 716f can easily set the spread angle θ of the light component in the diffraction wavelength range to a desired angle by diffracting the light component in the diffraction wavelength range. Even if the light components in the range are diffracted, it is difficult to set the spread angle θ of the light components in the wavelength range other than the diffraction wavelength range to a desired angle (for example, even if the light components in the wavelength range other than the diffraction wavelength range are diffracted, (The spread angle θ of the light component in a wavelength range other than the diffraction wavelength range is set to a different angle from the desired angle) in some cases. From the viewpoint of improving the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716, the resonance wavelength range (that is, the wavelength range including the oscillation wavelength of the laser diode) may at least partially overlap the diffraction wavelength range. Good. Conversely, if the characteristics of the reflection layers 714f and 715f and the diffraction layer 716f are set so that the resonance wavelength range and the diffraction wavelength range at least partially overlap, the resonance wavelength range and the diffraction wavelength range do not overlap. As compared with the case, improvement in the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 can be expected.

Note that, like the light EL0 repeatedly reflected by the

reflective layers

714 and 715, the light EL0 repeatedly reflected by the

reflective layers

714f and 715f also corresponds to light in a resonated state. In particular, in the sixth modification, the light EL0 that is repeatedly reflected by the reflection layers 714f and 715f is laser-oscillated light, so that the light EL0 relatively includes the wavelength of laser oscillation (that is, the oscillation wavelength of the laser diode). Light components in a narrow resonance wavelength range correspond to light in a state of laser oscillation.

Similar to the diffraction layer 716, the diffraction layer 716f diffracts the light EL1 using a photonic crystal structure. The characteristics of the photonic crystal structure included in the diffraction layer 716f may be appropriately set so that the diffraction layer 716f has the above-described characteristics. That is, the characteristics of the photonic crystal structure included in the diffraction layer 716f may be different from the characteristics of the photonic crystal structure included in the diffraction layer 716 described above.

The exposure apparatus EX including the light emitting device 71f of the sixth modification in place of the light emitting device 71 can also enjoy the same effects as those that can be enjoyed by the exposure apparatus EX including the light emitting device 71 described above. . Further, in the sixth modification, the exposure apparatus EX can generate the electron beam EB using the light emitting device 71f including the laser diode. Therefore, the degree of freedom in selecting the type of the light source of the light EL is increased. For this reason, if the type of the light source of the light EL is appropriately selected according to the characteristics of the exposure apparatus EX, the exposure apparatus EX can efficiently perform photoelectric conversion using the light EL and have a relatively high energy. To the wafer W.

In addition, as shown in FIG. 17B, the light EL1 that is oscillating by laser becomes light with a very small spread angle θ unless diffracted by the diffraction layer 716f. Until this situation, a technical problem may occur that the beam profile of the light EL at the position of the photoelectric conversion element 73 does not have desired characteristics or the restriction on the numerical aperture of the projection lens 72 is not satisfied. Absent. In the sixth modification, the diffraction layer 716f can diffract the light EL1 such that the spread angle θ of the light EL increases, considering that such a technical problem may occur. For this reason, even when the light emitting device 71f including the laser diode is used as the light source of the light EL, similarly to the case where the light emitting device 71 including the LED is used as the light source of the light EL, the exposure apparatus EX includes a plurality of light emitting devices. The electron beam EB can be generated appropriately (for example, efficiently).

In the above description, the light emitting device 71f including the laser diode capable of emitting the light EL in a direction perpendicular to the substrate is described. However, the exposure apparatus EX may include a light emitting device 71f 'different from the light emitting device 71f in that it includes a laser diode that emits the light EL in a direction parallel to the substrate. Also in this case, the same effect as the above-described effect can be obtained as long as the laser beam oscillated light EL1 is diffracted by the diffraction layer 716f. However, when a light emitting device 71f including a laser diode that emits light EL in a direction parallel to the substrate is used, the light EL emitted in a direction parallel to the substrate is extracted out of the plane by an appropriate extraction method. (That is, the light EL may be extracted out of the plane so as to propagate in a direction perpendicular to the substrate). Of course, when the light emitting device 71f including the laser diode that emits the light EL in the direction parallel to the substrate is used, the light EL emitted in the direction parallel to the substrate propagates in the direction parallel to the substrate. Out of the plane. As an example of a method for extracting the light EL, for example, as shown in FIG. 18A, an optical waveguide 717f for guiding the light EL0 emitted from the end face of the quantum well layer 711f (that is, the mirror end face constituting the resonator) 7111f. Is curved. Also in this case, as long as the light EL0 from the optical waveguide 717f is diffracted by the diffraction layer 716f, the same effect as the above-described effect can be obtained. As another example of a method of extracting the light EL, for example, as shown in FIG. 18B, a method of forming a planar diffraction grating type coupler at an end of an optical waveguide, and a method of forming an end of an optical waveguide. There is a method of forming an oblique mirror first and reflecting the light EL in a direction perpendicular to the surface of the substrate. As long as the light EL0 from the plane diffraction grating coupler or the oblique mirror is diffracted by the diffraction layer 716f, the same effects as those described above can be obtained.

(4-7) Seventh Modified Example Next, an exposure apparatus EXg according to a seventh modified example will be described. In the above description, the exposure apparatus EX has exposed the wafer W with the electron beam EB. However, the exposure apparatus EXg may expose a workpiece such as the wafer W or the plate P with the light EL from the light emitting device 71.

Hereinafter, description will be made with reference to FIGS. 19 and 20.

FIG. 19 is a perspective view showing an overall schematic configuration of an exposure apparatus EXg of a seventh modification. In the seventh modification shown in FIG. 19, a case will be described as an example in which a plate P which is a square substrate is exposed. In the following description, the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system in FIG. In the XYZ rectangular coordinate system, the X axis and the Y axis are set to be parallel to the plate P, and the Z axis is set to a direction orthogonal to the plate P. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z axis is set vertically upward. In this embodiment, the direction in which the plate P is moved (scanning direction) is set in the X-axis direction.

The exposure apparatus EXg of the seventh modification includes a plurality of projection optical devices 50. In a seventh modification, an image of a transfer pattern such as a pattern of a liquid crystal display element is formed as a photosensitive substrate coated with a photosensitive material (resist) while relatively moving the plate P with respect to the plurality of projection optical devices 50. A step-and-scan type exposure apparatus for transferring an image onto the plate P will be described as an example.

FIG. 20 is a diagram showing a schematic configuration of a projection optical device 50 provided in an exposure apparatus EXg of a seventh modification. As shown in FIG. 20, each projection optical device 50 has a barrel 54 having a cylindrical shape, and includes a variable pattern generating device 56 that forms a transfer pattern on the top of the barrel 54. Further, a projection optical system PL for projecting a transfer pattern formed by the variable pattern generation device 56 in the lens barrel 54 onto a plate P held on a plate stage (not shown) is provided. Here, the projection optical system PL has a reduction magnification. Note that the magnification of the projection optical system PL may be the same magnification or may be an enlargement magnification. Here, when the projection optical system PL has a reduction magnification, the numerical aperture of the projection optical system PL on the light emitting device 71 side (variable pattern generation device 56 side) is smaller than the numerical aperture on the plate P side. Further, the projection optical device 50 may have the same configuration as the projection lens 720 shown in FIG. 3B, and the variable pattern generation device 56 includes a plurality of light emitting devices 71 arranged on the XY plane. It may be a light-emitting image display device.

The variable pattern generation device 56 forms a light emitting pattern based on a transfer pattern transferred onto the plate P.

各 Also, each projection optical device 50 may include an oblique incidence autofocus system (not shown).

FIG. 21 is a diagram for explaining an arrangement state of each projection optical device 50. The seven projection optical devices 50 are arranged at equal intervals in the Y direction in the first row (the foremost row in FIG. 21), and at equal intervals in the Y direction in the second to sixth rows. In the seventh column, seven are arranged at regular intervals in the Y direction. Here, each projection optical device 50 is arranged so that the exposure area 51 overlaps with the exposure area 51 of any other projection optical unit 2 adjacent in the Y direction, that is, so that overlap exposure can be performed.

The transfer pattern generated by the variable pattern generation device 56 of each projection optical device 50 is projected onto the plate P by the projection optical system PL of each projection optical device 50 to form an image of the transfer pattern.

The exposure apparatus EXg has a scanning drive system (not shown) having a long stroke for moving the plate stage along the X-axis direction, which is the scanning direction, and a Y-axis direction, which is a scanning orthogonal direction. And a pair of alignment driving systems (not shown) for moving by a minute amount along the axis and rotating by a minute amount about the Z axis. The position coordinates of the plate stage are measured by a stage position measuring system (not shown) such as a laser interferometer using the movable mirror 52, and the position is controlled.

The variable pattern generation device 56, the scanning drive system, the alignment drive system, and the stage position measurement system are controlled by a control device (not shown). This control device sequentially outputs the transfer patterns to be generated in the variable pattern generation devices 56 of the respective projection optical devices 50 to the variable pattern generation devices 56 in synchronization with the scanning of the plate stage.

In the exposure apparatus EXg of the seventh modification, while the plate P is relatively moved with respect to each projection optical device 50, the liquid crystal is generated by the variable pattern generation device 56 of each projection optical device 50 in synchronization with the scanning of the plate P. A transfer pattern such as a display element pattern is sequentially generated, and each projection optical device 50 sequentially transfers an image of the generated transfer pattern onto a plate P as a photosensitive substrate coated with a photosensitive material (resist). .

In this way, the entire transfer pattern stored in the mask pattern storage device (not shown) is transferred (scanned and exposed) to the entire exposure area on the plate P.

According to the exposure apparatus of the seventh modification, the transfer pattern is sequentially generated in the variable pattern generation device 56 in synchronization with the scanning of the plate P, so that the cost is significantly reduced as compared with the case where a large-area mask is prepared. Can be reduced.

Further, by electrically changing the pattern in the scanning direction, the size of the mask in the multi-lens system is sufficient only for the exposure area of each projection optical device 50, and the exposure area is set to be smaller. Thus, it is possible to reduce not only the cost of the mask but also problems such as bending and undulation of the mask surface.

In the exposure apparatus EXg of the seventh modified example, since the narrow band light EL from the light emitting device 71 is used, the deterioration of the pattern image due to the chromatic aberration of the projection optical system PL can be reduced. In addition, since the light EL from the light emitting device 71 whose divergence angle is limited is used, light that cannot be captured by the projection optical system can be reduced, and the light amount loss can be reduced.

(4-8) Other Modifications In the above description, the optical system 3 is a multi-column optical system including a plurality of electron beam devices 5. However, the optical system 3 may be a single column type optical system including a single electron beam device 5.

In the above description, the optical system 3 is supported on the floor F via the frame 13 constituting the ceiling of the stage chamber 1. However, the optical system 3 may be suspended and supported on a ceiling surface of a clean room or a ceiling surface of a vacuum chamber by a suspension support mechanism having an anti-vibration function.

In the above description, the housing 6 of the optical system 3 includes the base plate 61, the peripheral wall 62, and the cooling plate 63. However, the housing 6 need not include at least one of the base plate 61, the peripheral wall portion 62, and the cooling plate 63. In this case, at least some members of the stage chamber 1 may function as at least one of the base plate 61, the peripheral wall 62, and the cooling plate 63. Further, the vacuum chamber 64 and the exposure chamber 14 may communicate with each other. Alternatively, the optical system 3 may not include the housing 6. In this case, a plurality of electron beam devices 5 may be arranged in the exposure chamber 14 of the stage chamber 1. The opening 131 may not be formed in the frame 13 of the stage chamber 1 in order to maintain the degree of vacuum in the exposure chamber 14.

In the above description, each of the electron beam devices 5 includes the electron beam generator 7 (that is, a surface emission type electron beam source having a plurality of electron emission regions 7331) that respectively emits the plurality of electron beams EB. An exposure apparatus. However, the exposure apparatus EX generates a plurality of electron beams EB via a blanking aperture array having a plurality of openings, and individually turns on / off the plurality of electron beams EB in accordance with a drawing pattern to change the pattern to the wafer W. It may be an exposure device that draws images on the surface.

In the above description, the electron beam device 5 is a multi-beam electron beam device that exposes the wafer W using a plurality of electron beams EB. However, the electron beam device 5 is a single-beam type electron beam device that exposes the wafer W using a single electron beam EB. In this case, the electron beam generator 7 may include a single light emitting device 71 and a single projection lens 72. The exposure apparatus EX may be a variable-shaped exposure apparatus that shapes the cross section of the electron beam EB that each electron beam device 5 irradiates the wafer W into a variable-size rectangular. The exposure apparatus EX may be a point beam type exposure apparatus in which each electron beam device 5 irradiates the wafer W with a spot-shaped electron beam EB. The exposure apparatus EX may be a stencil mask type exposure apparatus in which each electron beam device 5 shapes the electron beam EB into a desired shape using a stencil mask in which a beam passing hole having a desired shape is formed.

In the above description, the electron beam generator 7 is arranged in the through hole 612 of the base plate 61. However, at least a part of the electron beam generator 7 does not have to be arranged in the through-hole 612. For example, while the light emitting device 71 of the electron beam generator 7 is disposed in the through hole 612, the photoelectric conversion element 73 of the electron beam generator 7 is located below the through hole 612 (that is, the internal space 811 of the housing 81). It may be arranged. In this case, the light emitting device 71 may be used also as a vacuum partition separating the internal space 811 of the housing 81 and the external space of the housing 81. Alternatively, for example, the light emitting device 71 may be disposed above the through hole 612, while the photoelectric conversion element 73 may be disposed below the through hole 612 or the through hole 612. When the photoelectric conversion element 73 is arranged in the through hole 612, the photoelectric conversion element 73 may be used as a vacuum partition separating the internal space 811 of the housing 81 from the external space of the housing 81. When the photoelectric conversion element 73 is arranged below the through-hole 612, a vacuum partition separating the internal space 811 of the housing 81 and the external space of the housing 81 (however, a vacuum partition through which the light EL can pass). May be arranged in the through-hole 612. Alternatively, for example, the electron beam generating device 7 may be arranged in the housing 81 (for example, on the lower surface of the base plate 61) without forming the through hole 612 in the base plate 61.

The electron beam generation device 7 does not have to include the plurality of projection lenses 72. In this case, the plurality of lights EL emitted by the plurality of light emitting devices 71 may enter the photoelectric conversion element 73 without passing through the plurality of projection lenses 72. When the electron beam generator 7 does not include the plurality of projection lenses 72, the plurality of light emitting devices 71 may be integrated with the photoelectric conversion element 73. For example, the plurality of light emitting devices 71 may be configured such that the light EL from the plurality of light emitting devices 71 enters the photoelectric conversion element 73 without passing through a space (for example, at least one of a vacuum space and a gas space). And may be integrated. When the light EL from the plurality of light emitting devices 71 is incident on the photoelectric conversion element 73 without passing through a space (for example, at least one of a vacuum space and a gas space), the influence of the absorption and scattering of the light EL by gas molecules is caused. Disappears. Therefore, the light emitting device 71 emits light of a wavelength that is less absorbed by gas molecules (for example, a wavelength that exists in a part of the visible light region to the infrared light region and is called an atmospheric window). Not only a light-emitting device but also a light-emitting device that emits light of another wavelength can be used. As a result, the degree of freedom of the wavelength of the light EL emitted from the light emitting device 71 increases. For this reason, if the wavelength of the light EL is appropriately selected, the exposure apparatus EX can efficiently perform photoelectric conversion using the light EL, and irradiate the wafer W with the electron beam EB having a relatively high energy. can do.

In the above description, the light emitting device 71 is a light emitting device having a quantum well structure. However, the light emitting device 71 may be a light emitting device having a double hetero junction structure that does not use a quantum well. Alternatively, the light emitting device 71 may be a light emitting device having a homojunction structure.

In the above description, the diffraction layer 716 included in the light emitting device 71 is a layer having a two-dimensional photonic crystal structure in which the dielectric constant periodically changes along each of the X-axis direction and the Y-axis direction. However, the diffraction layer 716 has a one-dimensional photonic crystal structure in which the dielectric constant periodically changes along one of the X-axis direction and the Y-axis direction (or one direction included in the XY plane). It may be a layer. Alternatively, the diffraction layer 716 has a three-dimensional photonic crystal structure in which the dielectric constant periodically changes along each of the X-axis direction, the Y-axis direction, and the Z-axis direction (or each of three directions orthogonal to each other). Layer.

In the above description, the diffraction layer 716 controls the light distribution characteristics of the light EL by diffracting the light EL1 using the photonic crystal structure. However, the diffraction layer 716 may be a layer having a structure different from the photonic crystal structure as long as the light distribution characteristics of the light EL can be controlled by diffracting the incident light EL1. That is, the diffraction layer 716 may be a layer having no photonic crystal structure. Regarding the diffraction layer 714e of the fifth modification (that is, the diffraction layer 714e that diffracts the light EL0 to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711) Similarly, a layer having a structure different from the photonic crystal structure may be used as long as the wavelength distribution of the light EL0 and the wavelength distribution of the light EL1 can be changed by diffracting the light EL0.

In the above description, the photoelectric conversion element 73 converts the light EL into the electron beam EB using the alkali photoelectric layer 733. However, the photoelectric conversion element 73 may convert the light EL into the electron beam EB using a different type of photoelectric layer than the alkali photoelectric layer 733. An example of such a photoelectric layer is a metal photoelectric layer.

In the above description, the light emitting device 71 is used for generating the electron beam EB. The light emitting device 71 is provided in the electron beam generator 7. However, the light emitting device 71 may be used for a purpose different from the purpose for generating the electron beam EB. For example, the light emitting device 71 may be used in the same application as a normal LED (or any light source). As an example, the light emitting device 71 may be used for applications such as a lighting device, a display, and a projector.

In the above description, the electron beam generator 7 irradiates the alkali photoelectric layer 733 with the light EL from the light emitting device 71 via the aperture 7321. However, the electron beam generation device 7 may irradiate the light EL from the light emitting device 71 to the alkali photoelectric layer 733 without passing through the aperture 7321. For example, when the light emitting device 71 can emit light EL having a desired cross-sectional shape (for example, a shape corresponding to the aperture 7321), the electron beam generation device 7 outputs the light beam from the light emitting device 71 without passing through the aperture 7321. May be applied to the alkali photoelectric layer 733. In this case, the photoelectric conversion element 73 does not need to include the light shielding film 732.

In the above description, the photoelectric conversion element 73 is an optical element in which the plate member 731, the light shielding film 732, and the alkali photoelectric layer 733 are integrated. That is, the photoelectric conversion element 73 is an optical element in which a member for forming the aperture 7321 (that is, the light-shielding film 732) and a member for performing photoelectric conversion (that is, the alkali photoelectric layer 733) are integrated. However, a member for forming the aperture 7321 and a member for performing photoelectric conversion may be separate members. In this case, a member for forming the aperture 7321 may be movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. A member for performing photoelectric conversion may be movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. The light emitting device 71 may be movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction.

In the above description, the electron beam optical system 8 includes the housing 81, the accelerator 82, the focusing lens 83, the aperture plate 84, the objective lens 85, and the backscattered electron detection device 86. However, the electron beam optical system 8 need not include at least one of the housing 81, the accelerator 82, the electron lens 83, the aperture plate 84, the objective lens 85, and the backscattered electron detection device 86.

In the above description, the exposure apparatus EX is used for complementary lithography. However, the exposure apparatus EX may be used for applications other than complementary lithography. For example, the exposure apparatus EX may be used for exposing the wafer W so that a pattern (for example, a pattern of one semiconductor chip or a pattern of a plurality of semiconductor chips) is drawn on the wafer W with the electron beam EB. Alternatively, it may be used for exposing the wafer W so that the pattern of the minute mask is transferred to the wafer W by the electron beam EB. In this case, the exposure apparatus EX may be a batch transfer type exposure apparatus that collectively transfers a certain pattern from the mask to the wafer W. Alternatively, the exposure apparatus EX may be a division transfer type exposure apparatus capable of performing exposure at a higher throughput than the batch transfer type. The division transfer type exposure apparatus divides a pattern to be transferred to a wafer W into a plurality of small areas smaller than a size corresponding to one shot area on a mask, and transfers the patterns of the plurality of small areas to the wafer W. I do. Note that, as an exposure apparatus of the division transfer system, a certain area of a mask having a certain pattern is irradiated with an electron beam EB, and an image of the pattern in the area irradiated with the EB of the electron beam is reduced and transferred by a projection lens. There is also a transfer type exposure apparatus.

The exposure apparatus EX may be a scanning stepper. The exposure apparatus EX may be a stationary exposure apparatus such as a stepper. The exposure apparatus EX may be a step-and-stitch type reduction projection exposure apparatus that combines at least a part of one shot area and at least a part of another shot area.

In the above description, in the exposure apparatus EX, the wafer W is loaded alone on the wafer stage 22. However, the transfer member may be loaded on the wafer stage 22 in a state where the wafer W is held by the transfer member (for example, a shuttle).

In the above description, the exposure target of the exposure apparatus EX is the wafer W (for example, a semiconductor substrate for manufacturing a semiconductor device). However, the exposure target of the exposure apparatus EX may be any substrate. For example, the exposure apparatus EX may be an exposure apparatus for manufacturing an organic EL, a thin-film magnetic head, an image sensor (such as a CCD), a micromachine, or a DNA chip. For example, the exposure apparatus EX may be an exposure apparatus for drawing a pattern on a square glass plate or a silicon wafer.

In the above description, the electron beam device 5 is used to expose the wafer W. However, the electron beam device 5 may be used for a purpose different from the purpose of exposing the wafer W. Specifically, any device that irradiates the target with the electron beam EB may include the electron beam device 5. For example, any device that irradiates the target with the electron beam EB and performs a predetermined process (for example, processing) on the target may include the electron beam device 5. For example, an electron microscope, a three-dimensional printer that performs additional manufacturing, or the like may include the electron beam device 5.

デバイス A device such as a semiconductor device may be manufactured through the steps shown in FIG. The steps for manufacturing the device include a step S201 for designing the function and performance of the device, a step S202 for generating an exposure pattern (that is, an exposure pattern by the electron beam EB) based on the function and performance design, and a device base. Step S203 of manufacturing the wafer W, step S204 of exposing the wafer W using the electron beam EB according to the generated exposure pattern and developing the exposed wafer W, device assembly processing (dicing processing, bonding processing, package processing) And the like, and step S206 for performing device inspection.

少なくとも At least a part of the constituent elements of each of the above embodiments can be appropriately combined with at least another part of the constituent elements of each of the above embodiments. Some of the components of the above embodiments may not be used. In addition, as far as permitted by law, the disclosures of all the publications and U.S. patents cited in the above embodiments are incorporated herein by reference.

The present invention is not limited to the above-described embodiment, and can be appropriately changed within a scope not contrary to the gist or idea of the invention which can be read from the claims and the entire specification, and a light emitting device with such a change, The light emitting method, the exposure apparatus, the exposure method, and the device manufacturing method are also included in the technical scope of the present invention.

EX Exposure device 1 Stage chamber 2 Stage system 3 Optical system 5 Electron beam device 6 Housing 7 Electron beam generation device 71 Light emitting device 711 Quantum well layer 712, 713 Cladding layer

7131d Emission section

714, 715 Reflection layer 716 Diffraction layer

716a Micro lens

716b Reflection layer 719 Light emission surface 72 Projection lens 73 Photoelectric conversion layer 731 Plate member 732 Light shielding film 7321 Aperture 733 Alkaline photoelectric layer 8 Electron beam optical system EL light EB Electron beam

Claims

A light emitting device that emits light from a light exit surface,
A light emitting element that emits light,
A first optical element on which light from the light emitting element is incident;
A second optical element for controlling a spread angle of the light emitted from the light exit surface via the first optical element;
A light emitting device, wherein the light incident on the second optical element has a wavelength distribution different from the wavelength distribution of the light from the light emitting element.
The second optical element deflects light passing through the second optical element;
The light emitting device according to claim 1, wherein a deflection angle of the light passing through the second optical element varies depending on a wavelength of the light.
The first optical element narrows the band of the light from the light emitting element,
The said 2nd optical element can control the spread angle of the light component of the 2nd wavelength range which at least partially overlaps with the 1st wavelength range of the light narrowed by the 1st optical element. 3. The light emitting device according to 2.
A first portion provided between the first optical element and the light exit surface;
A second portion provided between the first portion and the light exit surface;
The light emitting device according to claim 1, wherein the light emitting element is located between the first portion and the second portion.
The light emitting device according to claim 4, wherein the first and second portions are made of a semiconductor.
The light emitting device according to claim 4, wherein light traveling inside the first and second portions and the inside of the light emitting element resonates.
The first optical element, the spectral distribution of the wavelength of the light from the light emitting element, with respect to the spectral distribution of the wavelength of the light from the first optical element, the wavelength distribution, such that the narrow band. The light emitting device according to any one of claims 1 to 6.
The first optical element has a wavelength distribution such that a half width of a spectrum distribution of the light from the first optical element is smaller than a half width of a spectrum distribution of the light from the light emitting element with respect to a wavelength of the light. The light emitting device according to any one of claims 1 to 7.
The first optical element, the peak value of the spectral distribution related to the wavelength of the light from the first optical element, relative to the peak value of the spectral distribution related to the wavelength of the light from the light emitting element, the The light emitting device according to claim 1, wherein the light emitting device controls a wavelength distribution.
The light emitting device according to any one of claims 1 to 9, wherein the light resonates between the first optical element and the second optical element.
A light emitting device that emits light from a light exit surface,
A light emitting element that emits light,
A first optical element that resonates light from the light emitting element;
A second optical element that controls a spread angle of the light emitted from the light exit surface.
The light emitting device according to claim 11, wherein the first optical element resonates the light between the first optical element and the light exit surface.
The light emitting device according to any one of claims 1 to 12, wherein the first optical element includes a resonator that resonates the light.
The light emitting device according to claim 13, wherein the resonator includes a reflective optical element.
The light emitting device according to claim 14, wherein the resonator reflects the light with the reflective optical element to resonate the light.
The light emitting device according to claim 14, wherein the light emitting element is disposed between the light exit surface and the reflective optical element.
The optical resonator includes at least two reflective optical elements,
The light emitting device according to any one of claims 14 to 16, wherein the light emitting element is disposed between the at least two reflective optical elements.
The light emitting element is disposed between the light exit surface and a first reflective optical element of the at least two reflective optical elements,
The light emitting device according to claim 17, wherein a second reflective optical element of the at least two reflective optical elements is disposed between the light exit surface and the light emitting element.
The light emitting device according to claim 1, wherein the first optical element controls a wavelength distribution of the light using diffraction of the light.
The light emitting device according to any one of claims 1 to 19, wherein the first optical element includes a diffraction element that diffracts the light.
The light emitting device according to claim 20, wherein the diffractive element includes an element whose permittivity changes periodically along a predetermined direction.
22. The light emitting device according to claim 20, wherein the diffraction element includes an element whose refractive index changes periodically along a predetermined direction.
The light emitting device according to any one of claims 20 to 22, wherein the diffraction element includes an element having a photonic crystal structure.
The light emitting device according to any one of claims 1 to 23, further comprising a structure including the light emitting element and the first optical element.
The light emitting device according to any one of claims 1 to 24, wherein the light emitting device has a stacked structure in which the light emitting element and the first optical element are stacked.
The light emitting device according to any one of claims 1 to 25, wherein the second optical element controls the divergence angle such that the divergence angle is smaller than before the divergence angle is controlled.
The light emitting device according to any one of claims 1 to 26, wherein a surface of the second optical element includes the light exit surface.
The light emitting device according to any one of claims 1 to 27, wherein the light emitting device emits the light from the second optical element.
The light emitting device according to any one of claims 1 to 28, wherein the second optical element controls the divergence angle using a diffraction phenomenon of the light.
A light emitting element that emits light,
A first optical element on which light from the light emitting element is incident;
A second optical element for diffracting the light passing through the first optical element,
A light emitting device, wherein the light incident on the second optical element has a wavelength distribution different from the wavelength distribution of the light from the light emitting element.
A light emitting element that emits light,
A first optical element that resonates the light from the light emitting element;
A second optical element that diffracts the resonated light.
The light emitting device according to any one of claims 1 to 31, wherein the second optical element includes a diffraction element that diffracts the light.
The light emitting device according to claim 32, wherein the diffractive element includes an element whose permittivity changes periodically along a predetermined direction.
The diffraction element includes an element whose dielectric constant periodically changes in at least one of a first direction, a second direction intersecting the first direction, and a third direction intersecting the first and second directions. The light emitting device according to claim 32 or 33.
In the diffraction element, a first region portion having a first dielectric constant has a second region portion having a dielectric constant different from the first dielectric constant along each of the first and second directions. Including periodically distributed elements,
The light emitting device according to claim 34, wherein the first region portions are distributed in a grid pattern in a plane along each of the first and second directions.
In the diffraction element, a first region portion having a first dielectric constant has a second region portion having a dielectric constant different from the first dielectric constant along each of the first and second directions. Including periodically distributed elements,
The light emitting device according to claim 34 or 35, wherein the first region portions are distributed in a triangular lattice shape in a plane along each of the first and second directions.
The light emitting device according to claim 35 or 36, wherein the first and second directions are parallel to an in-plane direction of the light emitting surface.
The said dielectric constant changes periodically with the period determined according to the desired wavelength corresponding to the peak value of the spectrum distribution regarding the wavelength of the light via the said 1st optical element. The light-emitting device according to claim 1.
Compared to before controlling the wavelength distribution, the first optical element narrows a band around a peak value included in a specific wavelength range, with respect to the spectral distribution of the wavelength of the light,
The light emitting device according to any one of claims 33 to 38, wherein the dielectric constant periodically changes at a period determined according to the specific wavelength range.
The light emitting device according to any one of claims 32 to 39, wherein the diffraction element includes an element having a photonic crystal structure.
41. The diffractive element includes at least one of an element having a one-dimensional photonic crystal structure, an element having a two-dimensional photonic crystal structure, and an element having a three-dimensional photonic crystal structure. A light emitting device according to claim 1.
The light emitting device according to any one of claims 1 to 41, wherein the second optical element controls a spread angle of the light by using a refraction phenomenon of the light.
A light emitting element that emits light,
A first optical element on which light from the light emitting element is incident;
A second optical element that refracts the light through the first optical element,
A light-emitting device in which light incident on the second optical element has a wavelength distribution different from the wavelength distribution of the light from the light-emitting element.
A light emitting element that emits light,
A first optical element that resonates the light from the light emitting element;
A second optical element that refracts the resonated light.
The light emitting device according to any one of claims 1 to 44, wherein the second optical element includes a refraction element that refracts the light.
The light emitting device according to any one of claims 1 to 45, wherein the second optical element includes a lens.
The light emitting device according to any one of claims 1 to 46, wherein the second optical element controls a spread angle of the light using a reflection phenomenon of the light.
The light emitting device according to any one of claims 1 to 47, wherein the second optical element includes a reflective element that reflects the light.
The light emitting device according to any one of claims 1 to 48, further comprising a structure including the light emitting element and the second optical element.
The light emitting device according to any one of claims 1 to 49, wherein the light emitting device has a stacked structure in which the light emitting element and the second optical element are stacked.
The light emitting device according to any one of claims 1 to 50, wherein the light emitting device is an LED (Light Emitting Diode).
52. The phase of light emitted from a first position on the light emitting surface and the phase of light emitted from a second position different from the first position on the light emitting surface are different from each other. A light emitting device according to any one of the preceding claims.
Comprising first and second layers,
The light emitting device according to any one of claims 1 to 52, wherein the light emitting element includes an active layer provided between the first and second layers.
A laser oscillation element that includes the light emitting element and the first optical element, and that emits laser light that is laser-oscillated as the light;
The light emitting device according to any one of claims 1 to 53, wherein the second optical element controls the divergence angle such that the divergence angle becomes larger than before the divergence angle is controlled.
A light emitting device that emits light from a light exit surface,
A light emitting element that emits light,
A plurality of first optical elements provided so as to sandwich the light emitting element;
A second optical element provided on the light exit surface, the second optical element increasing a spread angle of laser-oscillated light between the plurality of first optical elements.
The light emitting device according to claim 54 or 55, wherein the second optical element controls the spread angle using diffraction of the light.
The light emitting device according to any one of claims 54 to 56, wherein the second optical element includes a diffraction element that diffracts the light.
The light emitting device according to claim 57, wherein the diffractive element includes an element whose permittivity changes periodically along a predetermined direction.
The light emitting device according to claim 57 or 58, wherein the diffraction element includes an element having a photonic crystal structure.
55. The phase of light emitted from a first position on the light emission surface and the phase of light emitted from a second position different from the first position on the light emission surface have a correlation with each other. 60. The light emitting device according to any one of 59.
Generating light with a light emitting element;
Controlling the wavelength distribution of the generated light;
Controlling the spread angle of the light whose wavelength distribution is controlled.
Controlling the wavelength distribution is that the spectral distribution related to the wavelength of the light is narrower than before controlling the wavelength distribution, and the half width of the spectral distribution related to the wavelength of the light is reduced and / or 62. The light emitting method according to claim 61, further comprising controlling the wavelength distribution such that a peak value of a spectrum distribution with respect to a wavelength of the light increases.
63. The light emitting method according to claim 61 or 62, wherein controlling the wavelength distribution includes controlling the wavelength distribution using a resonator.
The controlling of the divergence angle includes controlling the divergence angle so that the divergence angle is smaller than before controlling the divergence angle. The method according to any one of claims 61 to 63. Light emission method.
The light emitting method according to any one of claims 61 to 64, wherein controlling the divergence angle includes controlling the divergence angle using a diffraction element and / or a refraction element.
The light emitting method according to claim 65, wherein the diffraction element includes an element having a photonic crystal structure.
A light emitting device according to any one of claims 1 to 60,
A projection optical system for irradiating the target with the light emitted by the light emitting device.
The exposure apparatus according to claim 67, wherein the projection optical system forms an image of a light emitting surface of the light emitting device on the target.
69. The exposure apparatus according to claim 67, wherein the projection optical system has a reduction magnification.
The exposure apparatus according to any one of claims 67 to 69, wherein a numerical aperture of the projection optical system on the light emitting device side is smaller than a numerical aperture of the projection optical system on the target side.
Having a plurality of the light emitting devices,
Light from a first light emitting device among the plurality of light emitting devices is irradiated to a first position of the target, and light from a second light emitting device different from the first light emitting device among the plurality of light emitting devices is emitted from the target. The exposure apparatus according to any one of claims 67 to 70, wherein the light is irradiated to a second position different from the first position.
A plurality of projection optical systems
The exposure apparatus according to any one of claims 67 to 71.
Emitting the light from the light emitting device according to any one of claims 1 to 60;
Forming an image of the light emitting surface of the light emitting device on a target.
A device manufacturing method including a lithography step,
The lithography step
Forming a line and space pattern on the target;
A device manufacturing method, comprising: using the exposure method according to claim 73, to cut a line pattern constituting the line and space pattern.