JP7380726B2 - Light emitting device, light emitting method, exposure apparatus, exposure method and device manufacturing method - Google Patents

Description

The present invention relates to the technical field of, for example, a light emitting device and a light emitting method that emit light, an exposure apparatus and an exposure method that expose a target, and a device manufacturing method that manufactures a device.

In recent years, solid-state light sources such as light-emitting diodes (LEDs) and laser diodes (LDs) have been proposed as light-emitting devices that emit light (see, for example, Patent Document 1). With solid-state light sources, the challenge is to generate light appropriately.

International Patent Publication No. WO99/45558 Pamphlet

According to a first aspect, there is provided a light emitting device that emits light from a light emitting surface, which includes a light emitting element that emits light, a first optical element into which light from the light emitting element enters, and the first optical element. a second optical element that controls the spread angle of the light emitted from the light exit surface through the light emitting element, and the light that enters the second optical element has a wavelength different from the wavelength distribution of the light from the light emitting element. A light emitting device having a distribution is provided.

According to a second aspect, there is provided a light emitting device that emits light from a light exit surface, the light emitting element that emits light, a first optical element that resonates light from the light emitting element, and a first optical element that emits light from the light exit surface. and a second optical element that controls a spread angle of the light.

According to a third aspect, it includes a light emitting element that emits light, a first optical element into which light from the light emitting element enters, and a second optical element that diffracts the light that has passed through the first optical element, A light emitting device is provided in which light incident on the second optical element has a wavelength distribution different from a wavelength distribution of the light from the light emitting element.

According to a fourth aspect, a light emitting device includes a light emitting element that emits light, a first optical element that resonates the light from the light emitting element, and a second optical element that diffracts the resonated light. provided.

According to the fifth aspect, it includes a light emitting element that emits light, a first optical element into which the light from the light emitting element enters, and a second optical element that refracts the light that has passed through the first optical element, A light emitting device is provided in which light incident on the second optical element has a wavelength distribution different from a wavelength distribution of the light from the light emitting element.

According to the sixth aspect, a light emitting device includes a light emitting element that emits light, a first optical element that resonates the light from the light emitting element, and a second optical element that refracts the resonated light. provided.

According to a seventh aspect, it is a light emitting device that emits light from a light emitting surface, which includes a light emitting element that emits light, a plurality of first optical elements provided so as to sandwich the light emitting element, and the light emitting element that emits light. A light emitting device is provided, including a second optical element provided on a surface and widening a spread angle of light emitted by laser between the plurality of first optical elements.

According to the eighth aspect, the steps include: generating light with a light emitting element; controlling a wavelength distribution of the generated light; and controlling a spread angle of the light with the controlled wavelength distribution. A method of emitting light is provided.

According to a ninth aspect, exposure comprising the light emitting device provided by any one of the first to seventh aspects described above, and a projection optical system that irradiates a target with the light emitted by the light emitting device. Equipment is provided.

According to a tenth aspect, emitting the light from the light emitting device provided by any of the first to seventh aspects described above, and forming an image of the light emitting surface of the light emitting device on a target. An exposure method is provided that includes.

According to an eleventh aspect, there is provided a device manufacturing method including a lithography step, wherein the lithography step includes forming a line-and-space pattern on a target, and the exposure method provided by the tenth aspect described above. There is provided a device manufacturing method including cutting a line pattern constituting the line and space pattern using the method.

FIG. 1 is a sectional view showing the structure of an exposure apparatus according to this embodiment. FIG. 2 is a block diagram showing the block structure of the control system in the exposure apparatus of this embodiment. FIG. 3(a) is a cross-sectional view showing a first structure of the electron beam generating device, and FIG. 3(b) is a cross-sectional view showing a second structure of the electron beam generating device. FIG. 4 is a cross-sectional view showing the structure of the light emitting device of this embodiment. Each of FIGS. 5(a) and 5(b) is a graph showing the spectral distribution regarding the wavelength of light. FIG. 6(a) is a cross-sectional view showing light emitted by the light emitting device of this embodiment (that is, light whose light distribution characteristics are controlled by the diffraction layer), and FIG. 6(b) is a cross-sectional view showing the light emitted by the light emitting device of this embodiment. FIG. 3 is a cross-sectional view showing light emitted by a light-emitting device of a comparative example that is different from the light-emitting device of the present embodiment in that the light-emitting device of the present embodiment is not controlled (that is, light whose light distribution characteristics are not controlled by a diffraction layer). FIG. 7(a) is a plan view showing the surface of the photonic crystal structure, and FIG. 7(b) is a cross-sectional view showing the VII-VII' cross section of the photonic crystal structure layer shown in FIG. 7(a). be. FIG. 8 is a cross-sectional view showing the structure of the electron beam optical system. FIG. 9 is a cross-sectional view showing the structure of the light emitting device of the first modification. FIG. 10 is a cross-sectional view showing another example of the structure of the light emitting device of the first modification. FIG. 11 is a cross-sectional view showing another example of the structure of the light emitting device of the first modification. FIG. 12 is a cross-sectional view showing the structure of a light emitting device according to a second modification. FIG. 13 is a cross-sectional view showing the structure of a light emitting device according to a third modification. FIG. 14 is a cross-sectional view showing the structure of a light emitting device according to a fourth modification. FIG. 15 is a cross-sectional view showing the structure of a light emitting device according to a fifth modification. FIG. 16 is a cross-sectional view showing the structure of a light emitting device according to a sixth modification. FIG. 17(a) is a cross-sectional view showing light emitted by the light emitting device of the sixth modification, and FIG. 17(b) is different from the light emitting device of the sixth modification in that it does not include a diffraction layer. FIG. 7 is a cross-sectional view showing light emitted by light emitting devices of different comparative examples. Each of FIGS. 18(a) and 18(b) is a cross-sectional view showing another example of the structure of the light emitting device of the sixth modification. FIG. 19 is a perspective view showing the overall schematic configuration of an exposure apparatus according to a seventh modification. FIG. 20 is a diagram showing a projection optical device of an exposure apparatus according to a seventh modification. FIG. 21 is a diagram showing the arrangement of each projection optical device of the exposure apparatus of the seventh modification. FIG. 22 is a flowchart showing the flow of the device manufacturing method.

Hereinafter, embodiments of a light emitting device, a light emitting method, an exposure apparatus, an exposure method, and a device manufacturing method will be described with reference to the drawings. In the following, a light emitting device, a light emitting method, an exposure apparatus, an exposure method, and a device manufacturing method will be described using an exposure apparatus (that is, an electron beam exposure apparatus) EX that irradiates the wafer W with an electron beam EB to expose the wafer W. An embodiment will be described. The exposure apparatus EX is used, for example, in complementary lithography.

Further, in the following description, the positional relationships of various components constituting the exposure apparatus EX will be described using an XYZ orthogonal coordinate system defined by X, Y, and Z axes that are orthogonal to each other. In the following explanation, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction within a horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction perpendicular to the horizontal plane). (and substantially in the vertical direction). Note that the Z-axis direction is also a direction parallel to each optical axis AX of a plurality of electron beam optical systems 8, which will be described later, provided in the exposure apparatus EX. Further, the Y-axis direction is a scanning direction in which the wafer W moves during exposure, which will be described later, within a plane perpendicular to the Z-axis. Further, the rotation directions (in other words, the tilt directions) around the X-axis, Y-axis, and Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

(1) Structure of exposure device EX
(1-1) Overall structure of exposure apparatus EX First, the overall structure of exposure apparatus EX of this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a sectional view showing the overall structure of the exposure apparatus EX of this embodiment. FIG. 2 is a block diagram showing the block structure of the control system in the exposure apparatus EX of this embodiment.

As shown in FIGS. 1 and 2, the exposure apparatus EX includes a stage chamber 1 (not shown in FIG. 2), a stage system 2, an optical system 3, and a control device 4 (not shown in FIG. 1). ).

The stage chamber 1 is a vacuum chamber in which an exposure chamber 14 formed therein can be evacuated. Note that in FIG. 1, illustration of both ends of the stage chamber 1 in the X-axis direction is omitted to simplify the drawing. The stage chamber 1 includes a bottom wall 11, a side wall 12, and a frame 13, as shown in FIG. A space surrounded by the bottom wall 11, side wall 12, and frame 13 becomes an exposure chamber 14.

The bottom wall 11 is arranged on the floor surface F. The bottom wall 11 is, for example, a wall-shaped (or plate-shaped) member parallel to the XY plane. The bottom wall 11 is a member that constitutes the bottom of the stage chamber 1 .

Side wall 12 is formed on bottom wall 11. The side wall 12 is formed, for example, to surround the bottom wall 11 along the outer edge of the bottom wall 11. The side wall 12 is, for example, a cylindrical (for example, cylindrical or rectangular) member that intersects the XY plane.

A frame 13 is formed on the side wall 12. In this case, the side wall 12 supports the frame 13 from below. The frame 13 is, for example, a plate-shaped member parallel to the XY plane. The frame 13 is a member that constitutes the ceiling wall (that is, the upper wall) of the stage chamber 1. A circular (or other shaped) opening 131 is formed in the frame 13 . The optical system 3 (particularly the housing 6 included in the optical system 3) is arranged within the opening 131. Specifically, the casing 6 includes a flange portion 611 at the upper end of the casing 6 that protrudes more outward than other portions. The lower surface of the flange portion 611 contacts the upper surface of the frame 13 when the optical system 3 is inserted into the opening 131 from above. As a result, the flange portion 611 is supported by the frame 13 from below. That is, the optical system 3 is supported by the frame 13 via the flange portion 611. Note that the space between the inner circumferential surface of the opening 131 and the outer circumferential surface of the housing 6 may be sealed with a sealing member.

Stage system 2 is arranged in exposure chamber 14 inside stage chamber 1 . The stage system 2 is arranged on the bottom wall 11 of the stage chamber 1. As shown in FIGS. 1 and 2, the stage system 2 includes a surface plate 21 (not shown in FIG. 2), a wafer stage 22 (not shown in FIG. 2), and a stage drive system 23 (not shown in FIG. 2). (not shown in FIG. 1), and a position measuring device 24 (not shown in FIG. 1).

The surface plate 21 is arranged on the bottom wall 11. The surface plate 21 is supported from below by the bottom wall 11 via a plurality of vibration isolators 25 .

The wafer stage 22 can hold the wafer W. The wafer stage 22 is capable of releasing the held wafer W. In order to hold the wafer W, the wafer stage 22 may include an electrostatic chuck that can attract the wafer W.

The wafer stage 22 is arranged on the surface plate 21. The wafer stage 22 is supported from below by the surface plate 21 via a weight canceling device 26. The weight canceling device 26 includes, for example, a metal bellows-type air spring 261 and a plate-shaped base slider 262. The upper end of the air spring 261 is connected to the lower surface of the wafer stage 22. The lower end of the air spring 261 is connected to the base slider 262. The base slider 262 is formed with a bearing portion (not shown) that blows the air inside the air spring 261 onto the surface plate 22 . The weight of the weight canceling device 26, the wafer stage 22, and the wafer W is supported by the static pressure (that is, the pressure within the gap) between the bearing section that blows out pressurized air and the upper surface of the surface plate 22. The base slider 262 is supported on the surface plate 22 in a non-contact manner via, for example, a differential pump type aerostatic bearing.

The wafer W is, for example, a semiconductor substrate for manufacturing semiconductor devices. As an example, the wafer W is a circular semiconductor substrate with a diameter of 300 mm coated with an electron beam resist. Of course, the wafer W is not limited to a semiconductor substrate, and may be any substrate as long as it can be irradiated with the electron beam EB.

The stage drive system 23 is a drive system for moving the wafer stage 22 under the control of the control device 4. The stage drive system 23 moves the wafer stage 22 along each of the X-axis direction and the Y-axis direction. For example, the stage drive system 23 may move the wafer stage 22 along each of the X-axis direction and the Y-axis direction with a predetermined stroke (for example, a stroke of 50 mm). The stage drive system 23 may move the wafer stage 22 along at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction in addition to or instead of at least one of the X-axis direction and the Y-axis direction. good. In this case, the stage drive system 23 moves in at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction with a stroke shorter than the stroke of the wafer stage 22 in at least one of the X-axis direction and the Y-axis direction. The wafer stage 22 may be moved along the line. The stage drive system 23 may slightly move the wafer stage 22 along at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction. In order to move the wafer stage 22, the stage drive system 23 may include a motor (for example, a moving magnet type motor or an ultrasonic motor). Note that when the stage drive system 23 includes a motor, the influence of magnetic field fluctuations caused by magnetic flux leakage from the motor (particularly magnetic field fluctuations in the space above the wafer W) on the positioning of the electron beam EB is negligible. be.

The position measuring device 24 is a measuring device for measuring the position of the wafer stage 22. Specifically, the position measuring device 24 can measure the position of the wafer stage 22 in each of the X-axis direction and the Y-axis direction. In addition to or in place of the position of the wafer stage 22 in at least one of the X-axis direction and the Y-axis direction, the position measurement device 24 measures the position of the wafer stage 22 in at least one of the Z-axis direction, the θX direction, the θY direction, and the θZ direction. It may also be possible to measure the position. In order to measure the position of the wafer stage 22, the position measuring device 24 may include, for example, at least one of an encoder and a laser interferometer. The measurement results of the position measuring device 24 are output to the control device 4.

The optical system 3 is arranged above the stage system 2 (particularly above the wafer stage 22). The optical system 3 is arranged at a position where it can face the wafer W while the stage system 2 is holding the wafer W. As shown in FIG. 1, the optical system 3 includes a plurality of (for example, 45) electron beam devices 5 and a housing 6.

Each electron beam device 5 is capable of emitting an electron beam EB. In the following description, each electron beam device 5 will be described using an example in which it is capable of emitting a plurality of electron beams EB. That is, in the following description, each electron beam device 5 is a multi-beam type electron beam device that exposes the wafer W using a plurality of electron beams EB. The electron beam device 5 can irradiate the wafer W with a plurality of emitted electron beams EB.

In order to irradiate the wafer W with a plurality of electron beams EB, the electron beam device 5 includes an electron beam generation device 7 and an electron beam optical system 8, as shown in FIGS. 1 and 2. The electron beam generation device 7 can generate a plurality of electron beams EB under the control of the control device 4. The electron beam optical system 8 emits a plurality of electron beams EB toward the wafer W under the control of the control device 4 so that the wafer W is irradiated with the plurality of electron beams EB generated by the electron beam generation device 7. do. Note that the respective structures of the electron beam generation device 7 and the electron beam optical system 8 will be described in detail later with reference to FIGS. 3 to 8, and therefore will not be described here.

The housing 6 includes a base plate 61, a peripheral wall portion 62, and a cooling plate 63. The base plate 61 is, for example, a plate-shaped member parallel to the XY plane. The base plate 61 is a member that constitutes the ceiling wall (that is, the upper wall) of the housing 6. Note that the base plate 61 includes the above-mentioned flange portion 611 on its outer edge. The peripheral wall portion 62 is formed to surround the base plate 61 along the outer edge of the base plate 61. The upper end of the peripheral wall portion 62 is connected to the lower surface of the base plate 61. The peripheral wall portion 62 is, for example, a cylindrical (or rectangular cylindrical) member that intersects the XY plane. The peripheral wall portion 62 is a member that constitutes a side wall of the housing 6. The cooling plate 63 is connected to the lower end of the peripheral wall portion 62. The cooling plate 63 is a member that constitutes the bottom wall of the housing 6. A space surrounded by the base plate 61, the peripheral wall 62, and the cooling plate 63 becomes a vacuum chamber 64 in which a plurality of electron beam devices 5 (in particular, a plurality of electron beam optical systems 8) are arranged. Note that the cooling plate 63 may or may not have a cooling function. The cooling plate 63 has a function of suppressing fogging, which is a phenomenon in which reflected electrons from the surface of the electron beam resist applied to the wafer W are reflected on the lower surface of the cooling plate 63 etc., adding a dose to the surrounding area. It may or may not have one.

A plurality of through holes 612 are formed in the base plate 61 and extend through the base plate 61 along the Z-axis direction. The number of the plurality of through holes 612 is the same as the number of the plurality of electron beam devices 5. The plurality of through holes 612 may be distributed, for example, in a matrix on the surface of the base plate 61. For example, when the optical system 3 includes 45 electron beam devices 5 as described above, the 45 through holes 612 cover the four corners of the 7 rows x 7 columns matrix on the surface of the base plate 61. It may be distributed in the excluded sequence. A plurality of electron beam generating devices 7 included in a plurality of electron beam devices 5 are arranged in each of the plurality of through holes 612 . In this case, the space between the through hole 612 and the electron beam generating device 7 may be sealed with a sealing member. Further, on the lower surface of the base plate 61, a plurality of electron beam optical systems 8, which are included in each of the plurality of electron beam devices 5, are arranged so as to surround the plurality of through holes 612.

A plurality of through holes 631 are formed in the cooling plate 63 and extend through the base plate 61 along the Z-axis direction. The number of the plurality of through holes 631 is the same as the number of the plurality of electron beam devices 5. The plurality of through holes 631 may be distributed, for example, in a matrix on the surface of the cooling plate 63. For example, when the optical system 3 includes 45 electron beam devices 5 as described above, the 45 through holes 631 are arranged at the four corners of a matrix of 7 rows and 7 columns on the surface of the cooling plate 63. It may be distributed in an arrangement excluding . The plurality of electron beams EB emitted by each electron beam device 5 pass through the through hole 612 corresponding to each electron beam device 5. That is, each electron beam device 5 irradiates the wafer W with a plurality of electron beams EB through the through hole 612 corresponding to each electron beam device 5. Therefore, each through hole 612 has a size (particularly, a diameter) that allows a plurality of electron beams EB emitted from the electron beam device 5 corresponding to each through hole 612 to pass through.

Control device 4 controls the entire operation of exposure device EX. For example, the control device 4 may control the stage drive system 23 based on the measurement results of the position measurement device 24 so that the wafer W is appropriately exposed. For example, the control device 4 may control a plurality of electron beam devices 5 so that the wafer W is appropriately exposed. In the example shown in FIG. 2, the exposure apparatus EX is equipped with a control device 4 that controls the entire operation of the exposure apparatus EX; In addition, a plurality of sub-control devices may be provided to control the plurality of electron beam devices 5, respectively. In this case, the plurality of sub-control devices may each control the plurality of electron beam devices 5 under the control of the control device 4. Further, the control device 4 may be provided outside the exposure device EX. In this case, the control device 4 may be connected to the exposure device EX via a network.

(1-2) Structure of the electron beam generating device 7 Next, the structure of the electron beam generating device 7 will be further explained with reference to FIGS. 3(a) and 3(b). FIG. 3(a) is a cross-sectional view showing the first structure of the electron beam generating device 7. As shown in FIG. FIG. 3(b) is a sectional view showing the second structure of the electron beam generating device 7. As shown in FIG.

As shown in FIG. 3A, the electron beam generation device 7 includes a plurality of light emitting devices 71, a plurality of projection lenses 72, and a photoelectric conversion element 73.

The plurality of light emitting devices 71 are formed on a single substrate (for example, a semiconductor substrate) not shown. However, the substrate on which some of the plurality of light emitting devices 71 are formed and the substrate on which other parts of the plurality of light emitting devices 71 are formed may be separate bodies. The plurality of light emitting devices 71 are arranged in a predetermined arrangement pattern on the substrate. For example, the plurality of light emitting devices 71 may be arranged in a two-dimensional array (or in a one-dimensional array) on the substrate. In this case, the plurality of light emitting devices 71 may be referred to as a light emitting device array. Note that the number of light emitting devices 71 is arbitrary, but as an example, the electron beam generation device 7 may include 72,000 light emitting devices 71. In this case, 72,000 light emitting devices 71 may be arranged in a two-dimensional array of 6,000 rows and 12 columns on the substrate.

Such a plurality of light emitting devices 71 can be manufactured, for example, as follows. First, a structure (for example, a structural layer such as a quantum well layer 711 described later) constituting the light emitting device 71 is formed on a substrate using an epitaxial growth technique or the like. Thereafter, the structures formed on the substrate are selectively removed according to the arrangement pattern of the plurality of light emitting devices 71 using an etching technique or the like. Removal of the structure in this case is performed in order to leave the structure forming each light emitting device 71 as a mesa structure or to separate a plurality of light emitting devices 71 that are integrated as a structure.

Each light emitting device 71 is capable of emitting light EL. Each light emitting device 71 is, for example, a self-emitting type light emitting device. In this case, each light emitting device 71 emits light EL generated by self-emission toward the outside of each light emitting device 71 (for example, toward the projection lens 72 corresponding to each light emitting device 71).

The light emission mode of the plurality of light emitting devices 71 can be individually controlled under the control of the control device 4. For example, the control device 4 can individually control the states of the plurality of light emitting devices 71 between a light emitting state in which light EL is emitted and a non-light emitting state in which light EL is not emitted. For example, the control device 4 can individually control the intensity of the plurality of lights EL emitted by the plurality of light emitting devices 71, respectively.

A light emitting diode (LED) is an example of a self-luminous light emitting device. Therefore, each light emitting device 71 may include an LED (for example, a micro LED). However, each light emitting device 71 is not limited to micro LEDs, and may include other types of LEDs. Examples of other types of LEDs include organic LEDs and polymer LEDs.

The light emission mode of the plurality of light emitting devices 71 can be individually controlled under the control of the control device 4. For example, the control device 4 can individually control the states of the plurality of light emitting devices 71 between a light emitting state in which light EL is emitted and a non-light emitting state in which light EL is not emitted. For example, the control device 4 can individually control the intensity of the plurality of lights EL emitted by the plurality of light emitting devices 71, respectively.

In this embodiment, each light emitting device 71 differs from existing LEDs in that the characteristics of the emitted light EL can be controlled. The structure of the light emitting device 71 of this embodiment, which is different from existing LEDs in that the characteristics of the emitted light EL can be controlled, will be described below with reference to FIG. 4. FIG. 4 is a cross-sectional view showing the structure of the light emitting device 71 of this embodiment.

As shown in FIG. 4, the light emitting device 71 includes a quantum well layer (active layer) 711, a cladding layer 712, a cladding layer 713, a reflective layer 714, a reflective layer 715, and a diffraction layer 716. The light emitting device 71 includes a diffraction layer 716, a reflective layer 715, a cladding layer 713, a quantum well layer 711, a cladding layer 712, and a reflective layer 714 when viewed from a light exit surface 719 from which the light emitting device 71 emits light EL to the outside. It has a laminated structure in which these are laminated in this order. That is, the quantum well layer 711, cladding layers 712 and 713, reflective layers 714 and 715, and diffraction layer 716 are integrated. The light emitting device 71 is a structure in which a quantum well layer 711, cladding layers 712 and 713, reflective layers 714 and 715, and a diffraction layer 716 are integrated. Note that the light emitting device 71 may further include a layer different from the quantum well layer 711, the cladding layers 712 and 713, the reflective layers 714 and 715, and the diffraction layer 716.

The quantum well layer 711 is a semiconductor layer having a smaller band gap than the cladding layers 712 and 713 (for example, a semiconductor layer containing at least one of AlGaAs and GaAs). Each of the cladding layers 712 and 713 is a semiconductor layer having a larger band gap than the quantum well layer 711 (for example, a semiconductor layer containing AlGaAs, AlGaInP, or InGaN). One of the cladding layers 712 and 713 is a p-type semiconductor layer. The other of the cladding layers 712 and 713 is an n-type semiconductor layer.

The quantum well layer 711 is a layer capable of forming a potential well (that is, a quantum well (QW)) in which the moving direction of electrons is restricted. In other words, the light emitting device 71 is a light emitting device having a double heterostructure using quantum wells. The quantum well layer 711 has a multi-quantum well structure (MQW) in which a plurality of layers for forming quantum wells are laminated. However, the quantum well layer 711 may have a single quantum well structure including only one layer for forming a quantum well.

When a voltage is applied between the cladding layer 712 and the cladding layer 713 via an electrode (not shown), electrons and holes recombine in the quantum well layer 711 layer. As a result, energy due to recombination is released as light. That is, light EL0 is generated in the quantum well layer 711.

Reflective layers 714 and 715 are arranged with quantum well layer 711 sandwiched therebetween. In the example shown in FIG. 4, the reflective layer 714 is placed on the opposite side of the light exit surface 719 when viewed from the quantum well layer 711, and the reflective layer 715 is placed on the side of the light exit surface 719 when viewed from the quantum well layer 711. It is located in

Light EL0 generated in the quantum well layer 711 enters the reflective layer 714 via the cladding layer 712. The reflective layer 714 reflects at least a portion of the light EL0 that has entered the reflective layer 714. Light EL0 generated in the quantum well layer 711 enters the reflective layer 715 via the cladding layer 713. The reflective layer 715 reflects at least a portion of the light EL that has entered the reflective layer 715. The light EL0 reflected by the reflective layer 714 enters the reflective layer 715 via the cladding layer 712, the quantum well layer 711, and the cladding layer 713. Therefore, at least a portion of the light EL0 reflected by the reflective layer 714 is reflected again by the reflective layer 715. The light EL0 reflected by the reflective layer 715 enters the reflective layer 714 via the cladding layer 713, the quantum well layer 711, and the cladding layer 712. Therefore, at least a portion of the light EL0 reflected by the reflective layer 715 is reflected again by the reflective layer 714.

In this way, the light EL0 generated in the quantum well layer 711 is repeatedly reflected by the reflective layers 714 and 715. As a result, the light EL0 repeatedly reflected on the reflective layers 714 and 715 forms a standing wave. Therefore, the light EL0 that has been repeatedly reflected on the reflective layers 714 and 715 has a higher resonance than the light EL0 that has not been repeatedly reflected on the reflective layers 714 and 715 (that is, the light EL0 that has just been generated in the quantum well layer 711). The difference is that it is in a state of That is, the light EL0 traveling inside the quantum well layer 711 and the cladding layers 712 and 713 located between the reflective layers 714 and 715 resonates. The reflective layers 714 and 715 cause the light EL0 to resonate between the reflective layer 714 and the diffraction layer 716 (or between the reflective layer 714 and the light exit surface 719).

As a result of the resonance of the light EL0, the light EL0 that is repeatedly reflected on the reflective layers 714 and 715 has a specific wavelength range (hereinafter referred to as "resonant wavelength range") compared to the light EL0 that is not repeatedly reflected on the reflective layers 714 and 715. The difference is that the light component (referred to as ")" is in a relatively amplified state. The light EL0 that is repeatedly reflected on the reflective layers 714 and 715 has a lower intensity (e.g., average value) of the light component in the wavelength range other than the resonant wavelength range, compared to the light EL0 that is not repeatedly reflected on the reflective layers 714 and 715. The difference is that the ratio of the intensity (for example, peak value) of the light component in the resonant wavelength range to the wavelength range is higher. In other words, the reflective layers 714 and 715 can function as a resonator that resonates the light EL0. The reflective layers 714 and 715 constitute a resonator that resonates the light EL0.

An example of such reflective layers 714 and 715 is a distributed reflection type reflective layer (so-called DBR (Distributed Brag Reflector) layer). The DBR layer has a stacked structure in which a plurality of semiconductor layers having different refractive indexes are stacked. The characteristics of the semiconductor layer (for example, material, thickness, refractive index, number of laminated layers, etc.) are appropriately set according to the resonant wavelength range. The arrangement positions of the reflective layers 714 and 715 (particularly the relative positions with respect to the quantum well layer 711, typically the distances) are also appropriately set according to the resonant wavelength range. Of course, a different type of reflective layer than the DBR layer may be used as the reflective layers 714 and 715.

Note that the resonant wavelength range may be set according to the wavelength of the light EL that the light emitting device 71 should emit (that is, the wavelength of the light EL that the light emitting device 71 is designed to emit). . For example, the resonant wavelength range may be set as a wavelength range centered on the wavelength of the light EL that the light emitting device 71 should emit. Further, the "wavelength range" in this embodiment means the range from one wavelength to another wavelength, but one wavelength and another wavelength may be different, or one wavelength and another wavelength may be different. The other wavelengths may be the same. When one wavelength and another wavelength are the same, the wavelength range essentially refers to a particular wavelength.

The resonant light EL0 enters the diffraction layer 716 via the reflection layer 715. Therefore, the reflectance of the reflective layer 715 is less than 100% (eg, 50% to 60%). Here, the reflectance of the reflective layer 715 may be the reflectance for the wavelength of the light EL that the light emitting device 71 should emit. Note that the reflective layer 715 may constitute a so-called half mirror. As a result of the resonant light EL0 entering the diffraction layer 716, the wavelength distribution of the light EL0 entering the diffraction layer 716 is different from the wavelength distribution of the light EL0 generated in the quantum well layer 711. Therefore, the light EL0 incident on the diffraction layer 716 is equivalent to the light obtained by controlling the wavelength distribution of the light EL0 generated in the quantum well layer 711. Therefore, it can be said that the light emitting device 71 substantially controls the wavelength distribution of the light EL0 generated in the quantum well layer 711 using at least the reflective layers 714 and 715. It can also be said that the light emitting device 71 substantially includes an optical element including at least the reflective layers 714 and 715 as an optical element for controlling the wavelength distribution of the light EL0 generated in the quantum well layer 711. Hereinafter, the light EL0 incident on the diffraction layer 716 will be referred to as "light EL1" to distinguish it from the light EL0 before incident on the diffraction layer 716 (for example, the light EL0 generated in the quantum well layer 711).

Here, the difference between the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711 will be explained with reference to FIGS. 5(a) and 5(b). FIG. 5(a) is a graph showing the spectral distribution regarding the wavelength of the light EL1. FIG. 5(b) is a graph showing the spectral distribution regarding the wavelength of the light EL0.

As shown in FIGS. 5(a) and 5(b), the light EL1 may have a narrower band than the light EL0. Specifically, the light EL1 may have a wavelength distribution narrower than that of the light EL0. In this case, the reflective layers 714 and 715 may reflect the light EL0 so that the light emitting device 71 emits light EL having a narrower band than the light EL0. The characteristics of the reflective layers 714 and 715 (for example, the characteristics of the semiconductor layer described above and the arrangement positions of the reflective layers 714 and 715) realize a state in which the light emitting device 71 emits light EL having a narrower band than the light EL0. It may be set to a possible desired characteristic. As a result, the light EL1 whose band has been narrowed (that is, whose wavelength distribution has been controlled to be narrow band) enters the diffraction layer 716. Note that "narrowing the band" here may mean that the wavelength range in which the intensity is equal to or greater than a predetermined value becomes narrower. "Narrowing the band" refers to narrowing the wavelength range (so-called spectral linewidth) in which the intensity is a specific percentage value (for example, 1/2 or 1/10 value) compared to the peak value. It may mean something. Moreover, "narrowing the band" may mean that the 95% energy purity width E95% becomes narrower. Here, the 95% energy purity width E95% can be defined as the width when the integral value of the intensity distribution within the width becomes 95% of the total integral value of the intensity distribution of the spectrum.

As shown in FIGS. 5A and 5B, the light EL1 may have a smaller half-value width of the spectral distribution than the light EL0. In this case, the reflective layers 714 and 715 may reflect the light EL0 so that the light emitting device 71 emits the light EL whose spectral distribution half width is smaller than that of the light EL0. The characteristics of the reflective layers 714 and 715 may be set to desired characteristics that enable the light emitting device 71 to emit light EL whose half width of spectral distribution is smaller than that of the light EL0. As a result, the light EL1 whose half-width of the spectral distribution is reduced (that is, the wavelength distribution is controlled so that the half-width of the spectral distribution is small) enters the diffraction layer 716. Note that the half-width may be Full Width at Half Maximum (FWHM) or Half Width at Half Maximum (HWHM). Note that the above-mentioned "narrowing of the band" may also mean that the half-width becomes smaller.

As shown in FIGS. 5A and 5B, the light EL1 may have a larger intensity peak value Ip than the light EL0. That is, the peak value Ip1 of the intensity of the light EL1 may be larger than the peak value Ip0 of the intensity of the light EL0. In this case, the reflective layers 714 and 715 may reflect the light EL0 so that the light emitting device 71 emits the light EL whose intensity peak value Ip is larger than that of the light EL0. The characteristics of the reflective layers 714 and 715 may be set to desired characteristics that enable the light emitting device 71 to emit light EL having a larger intensity peak value Ip than the light EL0. As a result, the light EL1 whose intensity peak value Ip is increased (that is, the wavelength distribution is controlled so that the intensity peak value Ip is increased) enters the diffraction layer 716. Note that the above-mentioned "narrowing of the band" may also mean that the peak value of the intensity becomes larger. Further, the wavelength at which the intensity reaches the peak value Ip is likely to be included in the resonant wavelength range. In particular, the wavelength at which the intensity reaches the peak value Ip is likely to coincide with the center wavelength λc of the resonant wavelength range or a wavelength in the vicinity thereof. For this reason, the above-mentioned "narrowing" refers to a wavelength range centered on the center wavelength λc where the intensity is the peak value Ip, and where the intensity is a predetermined value or more, or where the intensity is a specific value compared to the peak value. It may also mean that the wavelength range that is the value of the ratio becomes narrower.

Referring again to FIG. 4, the diffraction layer 716 is arranged at the interface between the light emitting device 71 and the space through which the light EL emitted from the light emitting device 71 propagates. Therefore, the light emitting device 71 emits light EL from the diffraction layer 716 toward the space outside the light emitting device 71. Therefore, at least a portion of the surface of the diffraction layer 716 (particularly the lower surface facing the projection lens 72 side) constitutes a light exit surface 719 from which the light EL is emitted. The surface of the diffraction layer 716 (particularly the lower surface facing the projection lens 72 side) includes a light exit surface 719. Note that in the example shown in FIG. 4, the light exit surface 719 includes a surface parallel to the XY plane.

The diffraction layer 716 diffracts the light incident on the diffraction layer 716. The diffraction layer 716 deflects the light passing through the diffraction layer 716 by diffracting the light incident on the diffraction layer 716. At this time, the deflection angle of the light passing through the diffraction layer 716 differs depending on the wavelength of the light. For example, the diffraction layer 716 imparts a first deflection angle to light of a first wavelength, and imparts a second deflection angle different from the first deflection angle to light of a second wavelength different from the first wavelength. may be given. In this case, the first wavelength light and the second wavelength light travel in different directions. That is, the diffraction layer 716 can substantially separate light of different wavelengths. Note that the deflection angle can be an angle formed by an axis along the traveling direction of the deflected light with respect to an axis along the traveling direction of the incident light.

As described above, the light EL1 enters the diffraction layer 716 via the reflective layer 715. Therefore, the diffraction layer 716 diffracts the light EL1 that is incident on the diffraction layer 716 via the reflection layer 715. Therefore, the light EL1 diffracted by the diffraction layer 716 is emitted from the light emitting device 71 as light EL. Note that when the light emitting device 71 is an LED, the phase of the first light emitted as part of the light EL from the first position of the light exit surface 719 is different from the first position of the light exit surface 719. The phases of the second light emitted from the two positions as another part of the light EL may be different from each other. In other words, the first light from the first position of the light exit surface 719 and the second light from the second position of the light exit surface 719 may be incoherent with each other.

Particularly in this embodiment, the diffraction layer 716 diffracts the light EL1 to control the light distribution characteristics (specifically, the light distribution) of the light EL from the light emitting device 71. That is, the diffraction layer 716 can function as an optical element for controlling the light distribution characteristics of the light EL by utilizing the diffraction of the light EL1. Hereinafter, control of the light distribution characteristics of the light EL by the diffraction layer 716 will be described with reference to FIGS. 6(a) and 6(b). FIG. 6A is a cross-sectional view showing the light EL emitted by the light emitting device 71 of this embodiment (that is, the light EL whose light distribution characteristics are controlled by the diffraction layer 716). FIG. 6B shows the light EL emitted by the light emitting device C71 of the comparative example, which is different from the light emitting device 71 of the present embodiment in that it does not include the diffraction layer 716 (that is, the light distribution characteristics are controlled by the diffraction layer 716). FIG.

As shown in FIGS. 6A and 6B, the spread angle θ1 of the light EL emitted by the light emitting device 71 may be smaller than the spread angle θ2 of the light EL emitted by the light emitting device C71. That is, the diffraction layer 716 may diffract the light EL1 so that the spread angle θ of the light EL is smaller than that in the case where the light EL1 is not diffracted. The diffraction layer 716 may deflect the light EL1 so that the spread angle θ of the light EL is smaller than that in the case where the light EL1 is not diffracted. The characteristics of the diffraction layer 716 are set to desired characteristics that allow the light EL1 to be diffracted (as a result, deflected) so that the spread angle θ of the light EL is smaller than when the light EL1 is not diffracted. Good too. Note that the "spread angle θ" herein may mean the divergence angle of the light EL emitted by the light emitting device 71. In addition, the "spread angle θ" is twice the angle between the axis of the light EL emitted by the light emitting device 71, along which the light beam with the maximum radiant intensity travels, and the axis along which the light ray with the radiant intensity of a predetermined value travels. can be the value of Note that the predetermined value of the radiation intensity may be 1/2 of the maximum radiation intensity.

In particular, the diffraction layer 716 may diffract the light EL1 by reducing the spread angle θ of the light EL so that the spread angle θ of the light EL becomes a desired angle. The diffraction layer 716 may deflect the light EL1 so that the spread angle θ of the light EL becomes smaller and the spread angle θ of the light EL becomes a desired angle. The characteristics of the diffraction layer 716 are set to desired characteristics that allow the light EL1 to be diffracted (as a result, deflected) by reducing the spread angle θ of the light EL so that the spread angle θ of the light EL becomes a desired angle. may have been done.

As described above, when the diffraction layer 716 diffracts and deflects the light EL1, the deflection angle of the light passing through the diffraction layer 716 differs depending on the wavelength of the light. Therefore, the diffraction layer 716 can easily make the spread angle θ of the light component in the diffraction wavelength range relatively small by diffracting the light component in a certain specific wavelength range (hereinafter referred to as "diffraction wavelength range"). In some cases, even if a light component in a wavelength range other than the diffraction wavelength range is diffracted, it is difficult to relatively reduce the spread angle θ of the light component in a wavelength range other than the diffraction wavelength range. The diffraction layer 716 makes it easy to set the spread angle θ of the light components in the diffraction wavelength range to a desired angle by diffracting the light components in the diffraction wavelength range, while diffracting the light components in the wavelength range other than the diffraction wavelength range. However, it is difficult to set the spread angle θ of a light component in a wavelength range outside the diffraction wavelength range to a desired angle (for example, even if a light component in a wavelength range outside the diffraction wavelength range is diffracted, it is difficult to set the spread angle θ of a light component in a wavelength range outside the diffraction wavelength range In some cases, the spread angle θ of the light component is set to a different angle from the desired angle. Therefore, the higher the overlap rate between the wavelength range of the light EL1 incident on the diffraction layer 716 and the diffraction wavelength range, the more efficient the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 should be. In other words, the higher the overlap rate between the wavelength range of the light EL1 incident on the diffraction layer 716 and the diffraction wavelength range, the more the diffraction layer 716 diffracts the light EL1 and adjusts the spread angle θ of the light EL to a desired angle. It should be easier to set.

Here, the light EL1 incident on the diffraction layer 716 is the light EL0 that has been resonated by the reflective layers 714 and 715 (that is, the light EL0 in which the light component in the resonant wavelength range is relatively amplified). be. In this case, from the viewpoint of improving the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716, the resonant wavelength range may at least partially overlap with the diffraction wavelength range. Conversely, if the characteristics of the reflective layers 714 and 715 and the diffraction layer 716 are set so that the resonant wavelength range and the diffraction wavelength range at least partially overlap, then the resonant wavelength range and the diffraction wavelength range do not overlap. Compared to the case, it is expected that the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 will be improved. In this case, it can be said that the reflective layers 714 and 715 resonate the light EL0 so that the control efficiency of the light distribution characteristics of the light EL is improved.

If the reflective layers 714 and 715 were not present, the light EL0 generated in the quantum well layer 711 would be incident on the diffraction layer 716, but in this case, the wavelength range of the light EL0 incident on the diffraction layer EL0 is the diffraction wavelength range. does not necessarily overlap, at least in part. Therefore, the light EL0 may enter the diffraction layer 716, where the intensity of the light component in the diffraction wavelength range is not so high (for example, the intensity of the light component in a wavelength range different from the diffraction wavelength range is relatively high). . As a result, if the reflective layers 714 and 715 are not present, the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 may deteriorate. On the other hand, in this embodiment, the light EL0 in which the light component in the resonant wavelength range is relatively amplified (e.g., the resonant wavelength with respect to the intensity (e.g., average value) of the light component in the wavelength range other than the resonant wavelength range) The light EL0) in which the ratio of the intensities (eg, peak values) of the light components in the range is not high is incident on the diffraction layer 716. Therefore, if the resonant wavelength range and the diffraction wavelength range at least partially overlap, the intensity of the light component in the diffraction wavelength range is not very high (e.g., the intensity of the light component in a wavelength range different from the diffraction wavelength range). (relatively high) light EL0 is less likely to enter the diffraction layer 716. In other words, there is a high possibility that the light EL0, in which the intensity of the light component in the diffraction wavelength range is relatively high (for example, the intensity of the light component in a wavelength range different from the diffraction wavelength range is relatively low), will be incident on the diffraction layer 716. . As a result, since the reflective layers 714 and 715 are present, the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 is improved.

Note that the diffraction wavelength range may or may not match the resonant wavelength range. The center wavelength of the diffraction wavelength range may or may not match the center wavelength of the resonant wavelength range. However, when the diffraction wavelength range matches the resonant wavelength range, the efficiency of controlling the light distribution characteristics of the light EL by the diffraction layer 716 is higher than when the diffraction wavelength range does not match the resonant wavelength range. There is a high possibility that it will improve further. When the center wavelength of the diffraction wavelength range matches the center wavelength of the resonant wavelength range, compared to the case where the center wavelength of the diffraction wavelength range does not match the center wavelength of the resonant wavelength range, the light generated by the diffraction layer 716 is There is a high possibility that the control efficiency of the light distribution characteristics of EL will be further improved.

The smaller the spread angle θ of the light EL, the higher the directivity of the light EL. Therefore, it can be said that the directivity of the light EL emitted by the light emitting device 71 is higher than the directivity of the light EL emitted by the light emitting device C71. Therefore, the diffraction layer 716 may diffract the light EL1 so that the directivity of the light EL is higher than when the light EL1 is not diffracted.

In this embodiment, the diffraction layer 716 may diffract the light EL1 using a photonic crystal structure. That is, the diffraction layer 716 may be a layer having a photonic crystal structure. A photonic crystal structure is a structure that includes a microstructure that has an internal periodic dielectric constant distribution (as a result, it also has an internal periodic refractive index distribution). An example of the structure of the diffraction layer 716 will be described below with reference to FIGS. 7(a) and 7(b). FIG. 7A is a plan view showing the surface of the diffraction layer 716 (in particular, the bottom surface facing the projection lens 72 side). FIG. 7(b) is a sectional view showing the VII-VII' cross section of the diffraction layer 716 shown in FIG. 7(a).

As shown in FIGS. 7A and 7B, the diffraction layer 716 includes a substrate 7161. The substrate 7161 is a plate-shaped member that extends along the XY plane. The substrate 7161 is, for example, a semiconductor substrate. A plurality of holes 7162 are formed in the substrate 7161. The plurality of holes 7162 are periodically distributed along each of the X-axis direction and the Y-axis direction (or each of two directions that are perpendicular to each other and both included in the XY plane).

The plurality of holes 7162 do not contain the material forming the substrate 7161. Therefore, the dielectric constant of the region (here, space) constituting the plurality of holes 7162 is different from the dielectric constant of the substrate 7161. Here, the dielectric constant of the region (space) constituting the plurality of holes 7162 can be the dielectric constant of the medium if a medium exists in the region (space), and if the region (space) is in a vacuum In this case, it can be taken as the dielectric constant of vacuum. Therefore, in the photonic crystal structure element 716, the region portion having the first dielectric constant (that is, the plurality of holes 7162) is different from the region portion having a dielectric constant different from the first dielectric constant (that is, the substrate 7161). It can be said that there is a periodic distribution within the range. In particular, a plurality of holes 7162 are periodically formed along each of the X-axis direction and the Y-axis direction. Therefore, the diffraction layer 716 shown in FIG. 7A is a layer having a two-dimensional photonic crystal structure in which the dielectric constant changes periodically along a two-dimensional plane.

When the dielectric constants of the plurality of holes 7162 and the dielectric constant of the substrate 7161 are different, the refractive index of the plurality of holes 7162 (specifically, the refractive index for light) is different from the refractive index of the substrate 7161. Therefore, in the photonic crystal structure element 716, the area portion having the first refractive index (that is, the plurality of holes 7162) is different from the area portion having a refractive index different from the first refractive index (that is, the substrate 7161). It can be said that there is a periodic distribution within the range. The diffraction layer 716 shown in FIG. 7A can also be said to be a layer having a two-dimensional photonic crystal structure in which the refractive index changes periodically along a two-dimensional plane.

The plurality of holes 7162 may be filled with a material having a dielectric constant different from that of the substrate 7161 (for example, a semiconductor material). Even in this case, in the photonic crystal structure element 716, the region portion having the first dielectric constant (that is, the plurality of materials respectively embedded in the plurality of holes 7162) has a different dielectric constant from the first dielectric constant. It can be said that it is distributed periodically within the region having a dielectric constant (that is, the substrate 7161).

When the diffraction layer 716 has such a photonic crystal structure, the characteristics of the diffraction layer 716 mainly depend on the characteristics of the photonic crystal structure. Therefore, the characteristics of the photonic crystal structure may be appropriately set so that the diffraction layer 716 has the above-mentioned characteristics (that is, the characteristics determined from the viewpoint of controlling the light distribution characteristics of the light EL).

An example of the characteristics of the photonic crystal structure is the arrangement pitch P of the plurality of holes 7162 (that is, the period of the plurality of holes 7162). The arrangement pitch P may be set, for example, based on the wavelength of the light EL that the light emitting device 71 should emit. For example, the arrangement pitch P may be the same as the wavelength of the light EL. For example, the arrangement pitch P may be larger than the wavelength of the light EL. For example, the arrangement pitch P may be larger than the wavelength of the light EL by a predetermined length. For example, the arrangement pitch P may be larger than the wavelength of the light EL by a predetermined percentage. For example, the arrangement pitch P may be smaller than the wavelength of the light EL. For example, the arrangement pitch P may be smaller than the wavelength of the light EL by a predetermined length. For example, the arrangement pitch P may be smaller than the wavelength of the light EL by a predetermined percentage. In either case, the arrangement pitch P may be set to a value that can improve the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716. The arrangement pitch P may be set to a value that allows the diffraction wavelength range and the resonant wavelength range to at least partially overlap.

Note that, as shown in FIG. 7, the plurality of holes 7162 are arranged at a first arrangement pitch along a first direction (for example, the X direction), and in a second direction (for example, the Y direction) that intersects the first direction. When arranged at a second arrangement pitch along the line, the first arrangement pitch and the second arrangement pitch may be the same pitch or may be different pitches. As an example, the first arrangement pitch may be larger than the second arrangement pitch.

An example of the characteristics of the photonic crystal structure is the depth D of the plurality of holes 7162. The depth D may be set to a value that allows the diffraction layer 716 to improve the control efficiency of the light distribution characteristics of the light EL. Note that as the depth D becomes larger, the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 is more likely to improve. However, if the depth D becomes too large, the hole 7162 may penetrate the diffraction layer 716 (for example, the substrate 7161) along the Z-axis direction. As a result, other layers adjacent to the diffractive layer 716 (in the example shown in FIG. 4, the reflective layer 715) may be affected. Therefore, the depth D may be set to such a value that the hole 7162 does not penetrate the diffraction layer 716 along the Z-axis direction. Of course, the hole 7162 may penetrate the diffraction layer 716 along the Z-axis direction as long as the influence on other layers adjacent to the diffraction layer 716 is small.

Note that the depth D of the plurality of holes 7162 may be different at different positions on the light emitting surface of the light emitting device 71, or may be the same depth at different positions on the light emitting surface of the light emitting device 71. good.

An example of the characteristics of the photonic crystal structure is the shape of the plurality of holes 7162. The shape of the plurality of holes 7162 may be set to a desired shape that can improve the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716. In the example shown in FIGS. 7(a) and 7(b), the plurality of holes 7162 are cylindrical holes. In other words, the plurality of holes 7162 have a circular cross-sectional shape along the XY plane and a rectangular cross-sectional shape including the Z axis. However, the plurality of holes 7162 may have a shape different from that shown in FIGS. 7(a) and 7(b). For example, the plurality of holes 7162 may be prismatic holes (that is, holes whose cross-sectional shape along the XY plane and the cross-sectional shape including the Z axis are both rectangular shapes). For example, the plurality of holes 7162 may be tapered columnar holes. The shapes of the plurality of holes 7162 may be the same.

An example of the characteristics of the photonic crystal structure is the arrangement pattern of a plurality of holes 7162. The arrangement pattern of the plurality of holes 7162 may be set to a desired pattern that can improve the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716. In the example shown in FIGS. 7A and 7B, the plurality of holes 7162 are arranged in a planar lattice pattern on the surface of the substrate 7161 (that is, on the XY plane). In particular, in the examples shown in FIGS. 7A and 7B, the plurality of holes 7162 are arranged in a triangular lattice-like (that is, hexagonal lattice-like) arrangement pattern. However, the plurality of holes 7162 may be arranged in an arrangement pattern different from the arrangement pattern shown in FIGS. 7(a) and 7(b). For example, the plurality of holes 7162 may be arranged in an orthorhombic lattice pattern (that is, an isosceles triangular lattice pattern), a rectangular lattice pattern, or a parallel body lattice pattern.

Referring again to FIG. 3A, the plurality of projection lenses 72 are optical lenses arranged to correspond to the plurality of light emitting devices 71, respectively. Therefore, the number of multiple projection lenses 72 is the same as the number of multiple light emitting devices 71. That is, when the electron beam generation device 7 includes 72,000 light emitting devices 71, the electron beam generation device 7 may include 72,000 projection lenses 72.

However, as shown in FIG. 3(b), the electron beam generation device 7 may include one or more projection lenses 720 corresponding to two or more light emitting devices 71. In the example shown in FIG. 3B, the electron beam generation device 7 includes one projection lens 720 that collectively corresponds to the plurality of light emitting devices 71 included in the electron beam generation device 7. Of course, the electron beam generating device 7 has one projection lens 720 corresponding to a first group of light emitting devices that is composed of two or more light emitting devices 71 among the plurality of light emitting devices 71 included in the electron beam generating device 7. , one projection lens 720 corresponding to the second light emitting device group, and one projection lens 720 corresponding to the Kth light emitting device group. In this case, the number of projection lenses 720 may be less than the number of light emitting devices 71.

In FIG. 3A, the light EL emitted from the light emitting device 71 corresponding to each projection lens 72 is incident on each projection lens 72. In FIG. Each projection lens 72 is, for example, a microlens, but may be any other optical element. Each projection lens 72 irradiates the photoelectric conversion element 73 (in particular, a specific area of the photoelectric conversion element 73 corresponding to each projection lens 72) with the light EL emitted by the light emitting device 71 corresponding to each projection lens 72. Each projection lens 72 transmits an image of a light emitting surface (for example, light exit surface 719) of a light emitting device 71 corresponding to each projection lens 72 to a photoelectric conversion element 73 (particularly, a photoelectric conversion element 73 corresponding to each projection lens 72 of the photoelectric conversion elements 73). (specified area).

In FIG. 3B, a plurality of lights EL emitted from a plurality of light emitting devices 71 enter the projection lens 720. The projection lens 720 irradiates the plurality of lights EL emitted by the plurality of light emitting devices 71 onto the photoelectric conversion element 73 (in particular, a specific area corresponding to each light emitting device 71 among the photoelectric conversion elements 73). The projection lens 720 forms an image of the light emitting surface (for example, the light exit surface 719) of the plurality of light emitting devices 71 on the photoelectric conversion element 73 (in particular, a specific area corresponding to each light emitting device among the photoelectric conversion elements 73). .

Each of the projection lenses 72 and 720 is a reduction optical system having a reduction magnification. In this case, each projection lens 72 forms a reduced image of the light emitting surface of the light emitting device 71 corresponding to each projection lens 72 on the photoelectric conversion element 73. Furthermore, the projection lens 720 forms reduced images of the light emitting surfaces of the plurality of light emitting devices 71 on the photoelectric conversion element 73. Each of the projection lenses 72 and 720 may be an equal-magnification optical system having equal-magnification (that is, ±1 times) magnification. Each of the projection lenses 72 and 720 may be a magnification optical system having magnification.

The numerical aperture of each projection lens 72 on the light emitting device 71 side is smaller than the numerical aperture of each projection lens 72 on the photoelectric conversion element 73 side. However, the numerical aperture of each projection lens 72 on the light emitting device 71 side may be larger than the numerical aperture of each projection lens 72 on the photoelectric conversion element 73 side. The numerical aperture of each projection lens 72 on the light emitting device 71 side may be the same as the numerical aperture of each projection lens 72 on the photoelectric conversion element 73 side.

Similarly, the numerical aperture of the projection lens 720 on the light emitting device 71 side is smaller than the numerical aperture of the projection lens 720 on the photoelectric conversion element 73 side. However, the numerical aperture of the projection lens 720 on the light emitting device 71 side may be larger than the numerical aperture of the projection lens 720 on the photoelectric conversion element 73 side. The numerical aperture of the projection lens 720 on the light emitting device 71 side may be the same as the numerical aperture of the projection lens 720 on the photoelectric conversion element 73 side.

The photoelectric conversion element 73 can convert a plurality of lights EL from a plurality of projection lenses 72 or a projection lens 720 into a plurality of electron beams EB. The photoelectric conversion element 73 can generate a plurality of electron beams EB from a plurality of lights EL from the plurality of projection lenses 72 or the projection lens 720. In order to convert a plurality of lights EL into a plurality of electron beams EB, the photoelectric conversion element 73 includes a plate member 731, a light shielding film 732, and an alkali photoelectric layer 733. The photoelectric conversion element 73 is a structure in which a plate member 731, a light shielding film 732, and an alkaline photoelectric layer 733 are integrated.

The plate member 731 is a plate-shaped member through which a plurality of lights EL can pass. The plate member 731 is a member made of quartz glass, for example, but may be made of other materials.

The light shielding film 732 is formed on the lower surface of the plate member 731. The light shielding film 732 can shield a plurality of lights EL. The light shielding film 732 is, for example, a film made of chromium or the like. In the example of FIG. 3A, a plurality of apertures 7321 corresponding to the plurality of projection lenses 72 are formed in the light shielding film 732. Therefore, the number of apertures 7321 is the same as the number of projection lenses 72. That is, when the electron beam generation device 7 includes 72,000 projection lenses 72, 72,000 apertures 7321 may be formed in the light shielding film 732. Further, in the example of FIG. 3B, a plurality of apertures 7321 corresponding to the plurality of light emitting devices 71 are formed in the light shielding film 732. Therefore, the number of apertures 7321 is the same as the number of light emitting devices 71. That is, when the electron beam generation device 7 includes 72,000 light emitting devices 71, 72,000 apertures 7321 may be formed in the light shielding film 732.

Returning to FIG. 3A, each aperture 7321 is formed at a position where the light EL from the projection lens 72 corresponding to each aperture 7321 is incident. As a result, the light EL from each projection lens 72 enters the aperture 7321 corresponding to each projection lens 72 via the plate member 731. That is, each projection lens 72 projects the light EL onto the photoelectric conversion element 73 so that the light EL from each projection lens 72 is incident on the aperture 7321 corresponding to each projection lens 72. At this time, each projection lens 72 projects the light EL onto the photoelectric conversion element 73 so that the light EL having a cross section one size larger than the aperture 7321 is incident on the aperture 7321.

However, when one projection lens 720 corresponds to two or more light emitting devices 71 as shown in FIG. 3(b), two or more lights EL from one projection lens 720 The light may enter each of two or more apertures 7321. Alternatively, even if one projection lens 72 or 720 corresponds to one light emitting device 71, one light EL from one projection lens 72 or 720 may be applied to each of two or more apertures 7321. It may be incident. In this case, each projection lens 72 or projection lens 720 transfers the light EL to the photoelectric conversion element 73 such that the light EL from each projection lens 72 or projection lens 720 forms a beam spot spanning two or more apertures 7321. It may be projected onto. In these cases, the number of apertures 7321 may be greater than the number of projection lenses 72 or projection lenses 720.

The alkaline photoelectric layer 733 is formed on a portion of the lower surface of the plate member 731 where the aperture 7321 is formed (that is, a portion where the light shielding film 732 is not formed) and on the lower surface of the light shielding film 732. The alkaline photoelectric layer 733 is a multi-alkali photocathode using two or more types of alkali metals. The multi-alkali photocathode is a photocathode that is highly durable, can generate electrons with green light having a wavelength of 500 nm, and has a high photoelectric effect quantum efficiency QE (for example, about 10%). In this embodiment, the alkali photoelectric layer 733 is used as an electron gun that generates the electron beam EB by the photoelectric effect of light EL, so a highly efficient one with a conversion efficiency of about 10 [mA/W] is used. Good too. The electron emitting surface of the alkaline photoelectric layer 733 is the lower surface of the alkaline photoelectric layer 733 (that is, the surface opposite to the surface facing the plate member 731).

The light EL from each projection lens 72 or 720 enters the alkaline photoelectric layer 733 via the plate member 731 and the aperture 7321 corresponding to each projection lens 72 . At this time, each projection lens 72 transmits an image of the light emitting surface (for example, light exit surface 719) of the light emitting device 71 corresponding to each projection lens 72 through the plate member 731 and the aperture 7321 corresponding to each projection lens 72. , is formed on the alkaline photoelectric layer 733. As a result, an electron beam EB having a cross section corresponding to the shape of the aperture 7321 is emitted downward from the alkali photoelectric layer 733 due to the photoelectric effect (that is, photoelectric conversion). At this time, since the alkali photoelectric layer 733 includes a plurality of apertures 7321 and each of the plurality of apertures 7321 is irradiated with light EL, the alkali photoelectric layer 733 can emit a plurality of electron beams EB. That is, the electron emitting surface (substantially, the photoelectric conversion surface) 7330 of the alkaline photoelectric layer 733 has a plurality of electron emitting regions that can respectively emit a plurality of electron beams EB at positions corresponding to the plurality of apertures 7321. 7331 is set. A plurality of electron emission regions 7331, each of which can function as an electron beam source, are set on the electron emission surface 7330. For example, when 72,000 apertures 7321 are formed, 72,000 electron emission regions 7331 may be set on the electron emission surface 7330. In this case, the first electron emitting region 7331 is set at a first position on the electron emitting surface 7330 corresponding to the first aperture 7321, and the first electron emitting region 7331 is set at a first position on the electron emitting surface 7330 corresponding to the second aperture 7321. A second electron emitting region 7331 is set at a position (that is, a position different from (that is, distant from) the first position), and a second position (that is, a second position on the electron emitting surface 7330 corresponding to the third aperture 7321) is set. In other words, the third electron emission region 7331 is set at a position different (that is, distant) from the first to second positions, ..., Kth (where K indicates the number of apertures 7321). ) The Kth electron emission region 7331 is set at the Kth position on the electron emission surface 7330 corresponding to the aperture 7321 of be done.

Each electron emission region 7331 emits an electron beam EB when the light emitting device 71 corresponding to each electron emission region 7331 emits light EL. On the other hand, each electron emission region 7331 does not emit the electron beam EB when the light emitting device 71 corresponding to each electron emission region 7331 does not emit light EL. Therefore, if the control device 4 individually controls the light emitting states of the plurality of light emitting devices 71, the on/off states of the plurality of electron beams EB can be individually controlled.

(1-3) Structure of the electron beam optical system 8 Next, the structure of the electron beam optical system 8 will be explained with reference to FIG. FIG. 8 is a cross-sectional view showing the structure of the electron beam optical system 8. As shown in FIG.

As shown in FIG. 8, the electron beam optical system 8 includes a housing 81, an accelerator 82, a focusing lens 83, an aperture plate 84, an objective lens 85, and a backscattered electron detection device 86.

The housing 81 is a cylindrical housing (in other words, a column cell) that can shield electromagnetic fields. The upper end of the housing 81 is connected to the lower surface of the base plate 61. An accelerator 82 , a focusing lens 83 , an aperture plate 84 , and an objective lens 85 are housed in an internal space 811 of the housing 81 . However, at least a portion of the accelerator 82, the focusing lens 83, the aperture plate 84, and the objective lens 85 may be arranged outside the housing 81.

In the internal space 811 of the housing 81, at least a portion of the electron beam generating device 7 (in particular, the alkaline photoelectric layer 733) is arranged. Furthermore, the internal space 811 becomes a space through which a plurality of electron beams EB emitted by the electron beam generation device 7 propagate. Therefore, the internal space 811 of the housing 81 is a vacuum space so that the alkaline photoelectric layer 73 and the electron beam EB are not exposed to the atmospheric pressure environment. The degree of vacuum in the internal space 811 may be higher than the degree of vacuum in the vacuum chamber 64 outside the housing 81 . Evacuation of the internal space 811 and evacuation of the vacuum chamber 64 may be performed separately. Note that the electron beam generating device 7 disposed in the through hole 612 of the base plate 61 forms a vacuum partition between the internal space 811 and the external space of the casing 81 (in particular, the external space of the stage chamber 1, which is a non-vacuum space). It may also be used as

The accelerator 82 is an extraction electrode for accelerating the plurality of electron beams EB emitted by the electron beam generation device 7. However, if it is not necessary to accelerate the plurality of electron beams EB, the electron beam optical system 8 does not need to include the accelerator 82.

The focusing lens 83 is an electron lens for converging the plurality of electron beams EB. The focusing lens 83 may be an electric field lens that applies an electric field to the plurality of electron beams EB, or may be a magnetic field lens that applies a magnetic field to the plurality of electron beams EB.

The aperture plate 84 is a diaphragm mechanism in which an aperture 841 through which a plurality of electron beams EB converged by the focusing lens 83 can pass is formed.

The objective lens 85 is an electron lens capable of focusing a plurality of electron beams EB on the surface of the wafer W at a predetermined reduction magnification. As a result, the plurality of electron beams EB are emitted from the electron beam optical system 8 toward the wafer W via the exit port 811 formed at the lower end of the housing 81 . The plurality of electron beams EB emitted by the electron beam optical system 8 are irradiated onto the wafer W through the through holes 631 of the cooling plate 63. Note that the objective lens 85 may be an electric field lens that applies an electric field to the plurality of electron beams EB, or may be a magnetic field lens that applies a magnetic field to the plurality of electron beams EB. The reduction magnification of the electron beam optical system 8 including the objective lens 85 is arbitrary, and may be, for example, 1/200, 1/120, or 1/80.

The backscattered electron detection device 86 is arranged below the exit port 811 of the housing 81 at a position that does not overlap with the paths of the plurality of electron beams EB. In the example shown in FIG. 8, the backscattered electron detection device 86 is arranged inside the through hole 631 of the cooling plate 63. The backscattered electron detection device 86 is a semiconductor type backscattered electron detection device using a pn junction or pin junction semiconductor. The reflected electron detection device 86 detects reflected electrons generated from alignment marks formed on the wafer W, for example, in order to align the wafer W. The detection results of the backscattered electron detection device 86 are output to the control device 4.

Note that the electron beam optical system 8 controls the amount of rotation (that is, the position in the θZ direction) of an image formed by the electron beam EB on a predetermined optical surface (for example, an optical surface intersecting the optical path of the electron beam EB), and the image The image forming apparatus may include an adjuster (for example, an electromagnetic lens) that can adjust any one of the magnification of the lens and the focal position corresponding to the imaging position. The electron beam optical system 8 may include, for example, a deflector capable of deflecting the electron beam EB.

In this embodiment, since the optical system 3 includes a plurality of electron beam devices 5 (that is, a plurality of electron beam optical systems 8), the irradiation of the electron beam EB is performed by the plurality of electron beam devices 5. done in parallel. Here, the plurality of electron beam devices 5 correspond to the plurality of shot areas on the wafer W on a one-to-one basis. However, the number of electron beam devices 5 may be greater or less than the number of shot areas S. Each electron beam device 5 can irradiate a rectangular (or other shaped) irradiation area with a plurality of electron beams EB. Therefore, the plurality of electron beam devices 5 can simultaneously irradiate a plurality of electron beams EB onto a plurality of irradiation areas respectively set on a plurality of shot areas on the wafer W. If each of the plurality of electron beam devices 5 irradiates the electron beam EB while moving the wafer W relative to such an irradiation region, a plurality of shot regions on the wafer W are exposed in parallel. As a result, the exposure apparatus EX can expose the wafer W with a relatively high throughput.

As an example, as described above, when the exposure apparatus EX includes 45 electron beam devices 5 and exposes a wafer W having a diameter of 300 mm, the optical axis of the electron beam device 5 ( That is, the arrangement interval of the optical axis AX) of the electron beam optical system 8 may be 43 mm. In this case, the shot area exposed by one electron beam device 5 is a rectangular area measuring 43 mm x 43 mm at most. Therefore, as described above, if the movement stroke of the wafer stage 22 is as long as 50 mm, all shot areas can be appropriately exposed. However, the number of electron beam devices 5 is not limited to 45, and may be set based on the diameter of the wafer W, the stroke of the wafer stage 22, and the like.

(2) Exposure operation by exposure device EX Next, the exposure operation (that is, the exposure method) by exposure device EX will be explained. As described above, the exposure apparatus EX is used for complementary lithography. For this reason, prior to the exposure of the wafer W by the exposure device A line-and-space pattern (hereinafter referred to as an "L/S pattern") is formed on the wafer W using an immersion exposure device or a dry exposure device). Thereafter, an electron beam resist is applied to the wafer W on which the L/S pattern is formed using a coater or the like. The exposure apparatus EX targets the wafer W on which the L/S pattern is formed and coated with the electron beam resist.

To expose the wafer W, first, the wafer W is loaded onto the wafer stage 22 in the stage chamber 1 . The wafer stage 22 holds (for example, sucks) the loaded wafer W.

Thereafter, the electron beam device 5 corresponding to each shot area performs an electron beam on at least one alignment mark formed on a scribe line (that is, a street line) corresponding to each of a plurality of shot areas on the wafer W. Irradiate EB. Thereafter, the reflected electron detection device 86 detects reflected electrons from at least one alignment mark. Thereafter, the control device 4 performs all-point alignment measurement on the wafer W based on the detection result of the backscattered electron detection device 86 (that is, the detection result of the alignment mark). The exposure apparatus EX starts exposing a plurality of shot areas on the wafer W using a plurality of electron beam devices 5 based on the results of this all-point alignment measurement. That is, the exposure apparatus EX starts exposure for forming a cut pattern on the L/S pattern formed on the wafer W and cutting the L/S pattern. For example, when forming a cut pattern for an L/S pattern formed on a wafer W with the periodic direction in the X-axis direction, the exposure apparatus EX moves the wafer W in the Y-axis direction under the control of the control device 4. While scanning, the irradiation timing of the plurality of electron beams EB is controlled. Note that the exposure apparatus EX does not perform all-point alignment measurement, but instead detects alignment marks formed corresponding to some shot areas on the wafer W, and performs exposure of multiple shot areas based on the results. You may start. Alternatively, the alignment mark may be detected outside the stage chamber 1. In this case, the exposure apparatus EX does not need to detect the alignment mark inside the stage chamber 1.

Here, an exposure sequence using the electron beam generator 7 (particularly the plurality of light emitting devices 71) will be described. Here, a large number of pixel regions (for example, light EL through each aperture 7321) are two-dimensionally arranged in a certain region on the wafer W so as to be adjacent to each other and lined up along the X-axis direction and the Y-axis direction. An exposure sequence will be described in which a pixel area (for example, a 10 nm square area) that coincides with the irradiation area of the electron beam EB caused by is set, and all of the pixel areas are exposed. Further, here, the electron beam generation device 7 includes 72,000 light emitting devices 71, and the light emitting device array including 6,000 light emitting devices 71 arranged at a predetermined pitch in the X-axis direction is arranged at a predetermined pitch in the Y-axis direction. The explanation will proceed using an example in which 72,000 light emitting devices 71 are arranged so that 12 light emitting devices are arranged. Note that, hereinafter, the 12 light-emitting device arrays are respectively referred to as a light-emitting device array A, a light-emitting device array B, . . . , and a light-emitting device array L.

Focusing on the light-emitting device array A, exposure using the light-emitting device array A starts for 6000 consecutive pixel regions in a certain row (referred to as the k-th row) lined up in the X-axis direction on the wafer W. be done. At the time of starting this exposure, it is assumed that the electron beam EB corresponding to the light EL from the light emitting device array A is at the home position. Then, the exposure apparatus EX deflects the electron beam EB from the home position in the +Y direction by following the movement (that is, scanning) of the wafer stage 22 in the +Y direction (or -Y direction, the same applies hereinafter) from the start of exposure. At the same time, exposure for the same 6000 pixel areas is continued. As a result, if exposure of 6,000 pixel areas is completed in Ta seconds, for example, the wafer stage 22 has advanced by, for example, Ta×V nanometers at a speed of V nanometers per second. Here, to simplify the explanation, it is assumed that Ta×V=96 nanometers.

Subsequently, while the wafer stage 22 is moving by 24 nanometers in the +Y direction at a speed of V nanometers per second, the exposure apparatus EX returns the electron beam EB to the home position. At this time, the electron beam device 5 does not actually irradiate the electron beam EB so that the electron beam resist actually applied to the wafer W is not exposed to light.

At this time, since the wafer stage 22 has advanced 120 nanometers in the +Y direction from the time of starting exposure, at this point, the 6000 consecutive pixel areas of the (k+12)th row are It is located at the same position as the pixel area. Therefore, the exposure apparatus EX exposes 6000 consecutive pixel regions in the (k+12)th row, in the same way as in the case of exposing the 6000 pixel regions in the kth row.

In parallel with the exposure of the 6000 pixel regions in the kth row by the light emitting device array A, the 6000 pixel regions in each of the (k+1)th row to the (k+11)th row are exposed from the light emitting device array B to the light emitting device array B. They are each exposed by L. In parallel with the exposure of the 6000 pixel regions in the (k+12)th row by the device array A, each of the 6000 pixel regions in the (k+13)th row to the (k+23)th row is exposed to light emitting devices from the light emitting device array B. Each of the arrays L is exposed to light.

In this way, the exposure apparatus EX moves the wafer stage 22 in the Y-axis direction for a region having a length in the X-axis direction and a width of 60 micrometers on the wafer W (that is, a region in which 6000 pixel regions are distributed). It is possible to perform exposure while scanning. Thereafter, if the exposure apparatus EX performs a similar scan exposure after moving the wafer stage 22 stepwise by 60 micrometers in the X-axis direction, A new length and width of 60 micrometers adjacent to the area can be exposed. Therefore, the exposure apparatus EX alternately performs scanning exposure in which the wafer W is exposed by deflecting the electron beam EB while moving the wafer stage 22 in the Y-axis direction, and stepping in which the wafer stage 22 is moved in the X-axis direction. By repeating this, one shot area on the wafer W can be exposed using one electron beam device 5. Furthermore, since the plurality of electron beam devices 5 are actually exposing mutually different shot areas on the wafer W in parallel, the exposure device EX can expose the entire surface of the wafer W.

Furthermore, during scan exposure, the exposure apparatus EX switches the light emitting state (that is, on/off) of each of the plurality of light emitting devices 71 as appropriate to place the cut pattern on the L/S pattern at the location where the cut pattern is to be formed. While the electron beam EB is irradiated, the electron beam EB is not irradiated to a portion of the L/S pattern where a cut pattern does not need to be formed. In other words, while an electron emission region 7331 corresponding to a location where a cut pattern is to be formed among the plurality of electron emission regions 7331 emits an electron beam EB, even if a cut pattern is not formed among the plurality of electron emission regions 7331. Electron emitting regions 7331 corresponding to good locations do not emit electron beams EB. As a result, the exposure apparatus EX can appropriately form a cut pattern with respect to the L/S pattern formed on the wafer W. That is, the exposure apparatus EX can appropriately cut the L/S pattern formed on the wafer W.

(3) Technical Effects of Exposure Apparatus EX In this embodiment, the exposure apparatus EX can turn on and off a plurality of electron beams EB by turning on and off a plurality of light emitting devices 71. Therefore, the exposure apparatus EX can appropriately form a cut pattern with respect to the L/S pattern formed on the wafer W. For example, the exposure apparatus EX can appropriately form a cut pattern at a desired position on a desired line of the L/S patterns formed in each of a plurality of shot areas set on the wafer W. .

Furthermore, in this embodiment, the exposure apparatus EX does not have to turn on and off the plurality of electron beams EB by deflecting the plurality of electron beams EB using a blanking aperture. Therefore, generation of unnecessary electrons (for example, electrons that do not contribute to exposure of the wafer W) in the blanking aperture is suppressed. Furthermore, the blanking aperture, which can be a source of complex distortion due to charge-up and magnetization, is fundamentally eliminated. Therefore, long-term unstable factors caused by the presence of the blanking aperture are eliminated from the exposure apparatus EX.

Furthermore, in this embodiment, the light emitting device 71 included in the exposure apparatus EX can control the light distribution characteristics (particularly the spread angle θ) of the emitted light EL using the diffraction layer 716. More specifically, the light emitting device 71 can emit light EL at an appropriate spread angle θ by making the spread angle θ smaller than when the spread angle θ is not controlled. Therefore, the electron beam generation device 7 generates a plurality of electron beams EB compared to a case where the light distribution characteristics of the light EL are not controlled (specifically, a case where the light emitting device 71 does not include the diffraction layer 716). can be generated appropriately (eg, efficiently). The reason for this will be explained below.

First, when the light emitting device 71 emits light EL at a spread angle θ larger than the appropriate spread angle θ, the photoelectric conversion is There is a high possibility that the proportion of the light EL that will not be irradiated onto a desired region of the element 73 (for example, the region corresponding to the aperture 7321) will increase. This is because when the light emitting device 71 emits the light EL at a spread angle θ larger than the appropriate spread angle θ, the projection This is because there is a high possibility that a large proportion of the light EL is emitted in a direction in which the lens 72 or 720 cannot take in the light EL. Furthermore, when the projection lens 72 or 720 (or a condensing optical system such as a projection optical system) is not interposed between the light emitting device 71 and the photoelectric conversion element 73, the light emitting device 71 is When the light EL is emitted with a large spread angle θ, the light EL is emitted in a direction where the desired area of the photoelectric conversion element 73 does not exist, compared to when the light emitting device 71 emits the light EL with a suitable spread angle θ. There is a high possibility that the proportion of optical EL will increase. Therefore, when the light emitting device 71 emits the light EL at a spread angle θ larger than the appropriate spread angle θ, there is a high possibility that the proportion of the light EL that will not be irradiated onto the alkaline photoelectric layer 733 will increase. That is, when the light emitting device 71 emits the light EL at a spread angle θ larger than the appropriate spread angle θ, there is a high possibility that the proportion of the light EL that does not contribute to the generation of the electron beam EB increases. Conversely, if the light emitting device 71 emits the light EL with an appropriate spread angle θ, the proportion of the light EL contributing to the generation of the electron beam EB should increase. The higher the proportion of the light EL that contributes to the generation of the electron beam EB, the higher the generation efficiency of the electron beam EB. Therefore, the exposure apparatus EX can appropriately (for example, efficiently) generate a plurality of electron beams EB.

Additionally, as described above, in the electron beam generation device 7 , the light EL emitted from the light emitting device 71 enters the photoelectric conversion element 73 via the projection lens 72 . Therefore, the light EL emitted from the light emitting device 71 in a diverging manner enters the photoelectric conversion element 73 via the projection lens 72 so as to converge toward the photoelectric conversion element 73. In this case, it is desired that the light emitting device 71 emits the light EL so that the beam profile of the light EL has desired characteristics at the position of the photoelectric conversion element 73. For example, the light emitting device 71 is configured such that the beamlet shape of the light EL at the position of the photoelectric conversion element 73 has a desired shape (for example, a top hat shape in which the intensity is approximately equal at the position corresponding to the aperture 7321). It is desirable to emit light EL. For this purpose, it is necessary to satisfy a restriction on the convergence angle of the light EL directed from the projection lens 72 to the photoelectric conversion element 73 (substantially, the numerical aperture of the projection lens 72 on the photoelectric conversion element 73 side). The numerical aperture of the projection lens 72 on the photoelectric conversion element 73 side depends on the magnification of the projection lens 72 and the numerical aperture of the projection lens 72 on the light emitting device 71 side. Therefore, when the numerical aperture of the projection lens 72 on the photoelectric conversion element 73 side and the magnification of the projection lens 72 are determined, the numerical aperture of the projection lens 72 on the light emitting device 71 side is also uniquely determined. In this case, unless the light emitting device 71 emits the light EL at a spread angle θ corresponding to the numerical aperture of the light emitting device 71 side of the projection lens 72, the proportion of the light EL that does not contribute to the generation of the electron beam EB as described above. is likely to increase. In such a situation, in this embodiment, the spread angle θ of the light EL emitted from the light emitting device 71 can be controlled. Therefore, the light emitting device 71 can emit the light EL at a spread angle θ corresponding to the numerical aperture of the projection lens 72 on the light emitting device 71 side. That is, the light emitting device 71 can emit the light EL such that the beam profile of the light EL has desired characteristics at the position of the photoelectric conversion element 73. As a result, the exposure apparatus EX can appropriately (for example, efficiently) generate a plurality of electron beams EB.

Furthermore, in the present embodiment, in the light emitting device 71 included in the exposure apparatus EX, the wavelength distribution of the light EL1 that enters the diffraction layer 716 via the reflective layers 714 and 715 is the same as the wavelength distribution of the light EL0 generated in the quantum well layer 711. It is different from. Specifically, the light EL1 has a narrower band than the light EL0. As a result, the light emitting device 71 can emit narrow band light EL via the diffraction layer 716. Therefore, the influence of chromatic aberration on the projection lens 72 and the photoelectric conversion element 73 is reduced.

In addition, considering that the energy of the light EL is inversely proportional to the wavelength, the energy variation of the light EL whose band has been narrowed is smaller than the variation of the energy of the light EL whose band has not been narrowed. Therefore, the energy variation of the electron beam EB generated from the light EL with small energy variation also becomes small. Therefore, the exposure apparatus EX can generate an electron beam EB with small (that is, stable) energy variation. That is, the exposure apparatus EX can properly expose the wafer W by irradiating the wafer W with the stable electron beam EB.

In addition, as described above, the diffraction layer 716 makes it easy to set the spread angle θ of the light component in the diffraction wavelength range to a desired angle by diffracting the light component in the diffraction wavelength range. Even if a light component in a wavelength range is diffracted, it is difficult to set the spread angle θ of a light component in a wavelength range outside the diffraction wavelength range to a desired angle (for example, even if a light component in a wavelength range outside the diffraction wavelength range is diffracted, , the spread angle θ of a light component in a wavelength range other than the diffraction wavelength range may be set to a different angle from the desired angle. Therefore, if the light EL0 generated in the quantum well layer 711 were to enter the diffraction layer 716 without passing through the reflective layers 714 and 715, the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 may deteriorate. . On the other hand, in this embodiment, the light EL1 (that is, the light EL1 in which the light component in the resonant wavelength range is relatively amplified) is incident on the diffraction layer 716 via the reflective layers 714 and 715. come. Therefore, if the resonant wavelength range and the diffraction wavelength range at least partially overlap, the diffraction layer 716 appropriately diffracts the light EL1 entering from the reflection layer 715 and ejects it from the light emitting device 71. The spread angle θ of the light EL can be appropriately set to a desired angle. In other words, the reflective layers 714 and 715 contribute to resonance (that is, narrow band) of the light EL, and also contribute to improving the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716. Therefore, in the exposure apparatus EX including the light emitting device 71 including both the reflection layers 714 and 715 and the diffraction layer 716, compared to the exposure apparatus of the comparative example which includes the diffraction layer 716 but does not include the reflection layers 714 and 715. , the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 is further improved. Therefore, the exposure apparatus EX can more appropriately enjoy the above-mentioned technical effects resulting from the diffraction layer 716, compared to the exposure apparatus of the comparative example. In other words, the exposure apparatus EX can generate the plurality of electron beams EB more appropriately (for example, more efficiently) than the exposure apparatus of the comparative example.

(4) Modification Next, a modification of the light emitting device 71 will be described.

(4-1) First Modification First, a light emitting device 71a of a first modification will be described with reference to FIGS. 9 to 11. FIG. 9 is a cross-sectional view showing the structure of a light emitting device 71a of a first modification. 10 and 11 are cross-sectional views showing other examples of the structure of the light emitting device 71a of the first modification.

Compared to the light emitting device 71 described above, the light emitting device 71a of the first modification example uses refraction of the light EL1 instead of controlling the light distribution characteristics of the light EL using diffraction of the light EL1. The difference is that the light distribution characteristics of the light EL are controlled.

In order to control the light distribution characteristics of the light EL using the refraction of the light EL1, the light emitting device 71a differs in that it includes a microlens 716a instead of the diffraction layer 716, as shown in FIG. There is. Other features of light emitting device 71a may be the same as other features of light emitting device 71.

The microlens 716a is arranged at the interface between the light emitting device 71a and a space in which the light EL emitted from the light emitting device 71a propagates. Therefore, the light emitting device 71a emits light EL from the microlens 716a toward the space outside the light emitting device 71a. Therefore, at least a portion of the surface of the microlens 716a (particularly the lower surface facing the projection lens 72 side) constitutes a light exit surface 719 from which the light EL is emitted. The surface of the microlens 716a (particularly the lower surface facing the projection lens 72 side) includes a light exit surface 719.

The microlens 716a is arranged so that the light EL0 from the adjacent reflective layer 715 enters the microlens 716a without passing through a space (for example, at least one of a vacuum space and a gas space). In the first modification, the light EL0 that enters the microlens 716a is referred to as "light EL1" to distinguish it from the light EL0 (for example, the light EL0 generated in the quantum well layer 711) before entering the microlens 716a. do. In this case, for example, the microlens 716a is arranged so that there is no space (for example, at least one of a vacuum space and a gas space) between the microlens 716a and the adjacent reflective layer 715. However, as shown in FIG. 10, the microlens 716a is arranged such that the light EL1 from the adjacent reflective layer 715 enters the microlens 716a through a space (for example, at least one of a vacuum space and a gas space). may have been done. In this case, for example, the microlens 716a may be arranged such that a space (for example, at least one of a vacuum space and a gas space) exists between the microlens 716a and the adjacent reflective layer 715.

The microlens 716a refracts the light EL1 and controls the light distribution characteristics of the light EL from the light emitting device 71a. In other words, the microlens 716a can function as an optical element for controlling the light distribution characteristics of the light EL by utilizing refraction of the light EL1. Note that the manner in which the light distribution characteristics are controlled by the microlens 716a in the first modification is similar to the manner in which the light distribution characteristics are controlled by the diffraction layer 716 described above. In other words, the microlens 716a may refract the light EL1 so that the spread angle θ of the light EL is smaller than when the light EL1 is not refracted. The microlens 716a may refract the light EL1 so that the spread angle θ of the light EL becomes smaller than that in the case where the light EL1 is not refracted, resulting in a desired angle. Therefore, a detailed explanation of how the light distribution characteristics are controlled by the microlens 716a will be omitted.

The light emitting device 71 includes a single microlens 716a. However, as shown in FIG. 11, the light emitting device 71a may include a plurality of microlenses 716a. In this case, the plurality of microlenses 716a cooperate to control the light distribution characteristics of the light EL. Note that FIG. 11 shows an example in which the light emitting device 71a includes two microlenses 716a.

The exposure apparatus EX that includes the light emitting device 71a of the first modification instead of the light emitting device 71 can also enjoy the same effects as the exposure apparatus EX that includes the light emitting device 71 described above. . In addition, in the first modification, since the light EL1 has a narrower wavelength distribution than the light EL0, it is difficult to control the light distribution characteristics due to the chromatic aberration of the microlens 716a. It is also possible to enjoy the effect of being reduced.

Note that the light emitting device 71a may include a diffraction layer 716 in addition to the microlens 716a. In this case, the light emitting device 71a may be able to more appropriately control the light distribution characteristics of the light EL.

(4-2) Second Modification Next, a light emitting device 71b of a second modification will be described with reference to FIG. 12. FIG. 12 is a cross-sectional view showing the structure of a light emitting device 71b of a second modification.

Compared to the light emitting device 71 described above, the light emitting device 71b of the second modification example uses reflection of the light EL1 instead of controlling the light distribution characteristics of the light EL using diffraction of the light EL1. The difference is that the light distribution characteristics of the light EL are controlled.

In order to control the light distribution characteristics of the light EL by utilizing the reflection of the light EL1, the light emitting device 71b differs in that it includes a reflective layer 716b instead of the diffraction layer 716, as shown in FIG. There is. Other features of light emitting device 71b may be the same as other features of light emitting device 71. However, since the light emitting device 71b does not include the diffraction layer 716, the light exit surface 719 of the light emitting device 71b is constituted by at least a portion of the surface of the reflective layer 715 (in particular, the lower surface facing the projection lens 72 side). . The surface of the reflective layer 715 (particularly the lower surface facing the projection lens 72 side) includes a light exit surface 719. Alternatively, the light exit surface 719 may be configured by at least a portion of another layer (not shown) formed on the surface of the reflective layer 715. Another layer (not shown) formed on the surface of the reflective layer 715 may include a light exit surface 719.

The reflective layer 716b reflects the light EL0 generated in the quantum well layer 711 and/or the light EL0 reflected by the reflective layer 715, and controls the light distribution characteristics of the light EL from the light emitting device 71b. In other words, the reflective layer 716b can function as an optical element for controlling the light distribution characteristics of the light EL by utilizing the reflection of the light EL0. Note that the manner in which the light distribution characteristics are controlled by the reflective layer 716b in the second modification is similar to the manner in which the light distribution characteristics are controlled by the diffraction layer 716 described above. In other words, the reflective layer 716b may reflect the light EL0 so that the spread angle θ of the light EL is smaller than when the light EL0 is not reflected. The reflective layer 716b may reflect the light EL0 so that the spread angle θ of the light EL becomes smaller to a desired angle compared to the case where the light EL0 is not reflected. Therefore, a detailed explanation of how the light distribution characteristics are controlled by the reflective layer 716b will be omitted.

The reflective layer 716b may be arranged at a position where it can reflect the light EL0 so that the spread angle θ of the light EL becomes small (further, becomes a desired angle). In the example shown in FIG. 12, the reflective layer 716b is arranged on the opposite side of the light exit surface 719 when viewed from the quantum well layer 711. Of course, the reflective layer 716b may be placed at a position different from that shown in FIG. 12.

In the example shown in FIG. 12, since the reflective layer 716b is disposed on the opposite side of the light exit surface 719 when viewed from the quantum well layer 711, the reflective layer 716b is It may also be used as the reflective layer 714. In other words, the reflective layer 716b is used as an optical element for reflecting and resonating the light EL0 (that is, an optical element for narrowing the band of the light EL) and as an optical element for controlling the light distribution characteristics of the light EL. May be used for both purposes. Therefore, in the example shown in FIG. 12, the light emitting device 71b does not include the above-mentioned reflective layer 714. Of course, the light emitting device 71b may include the reflective layer 714 in addition to the reflective layer 716b.

The reflective layer 716b may be made of any material as long as it can reflect the light EL0. For example, the reflective layer 716b may be made of a metal material. For example, the reflective layer 716b may be made of a semiconductor material, similar to the reflective layer 715 (and the reflective layer 714 described above).

The reflective layer 716b may have a shape capable of reflecting the light EL0 so that the spread angle θ of the light EL becomes small (further, becomes a desired angle). For example, the reflective surface of the reflective layer 716b may include a flat surface. For example, the reflective surface of the reflective layer 716b may include a plane perpendicular to the optical axis of the electron beam device 5 (typically, the optical axis AX of the electron beam optical system 8). For example, the reflective surface of the reflective layer 716b may include a plane inclined with respect to the optical axis of the electron beam device 5. For example, the reflective surface of the reflective layer 716b may include a plane parallel to the optical axis of the electron beam device 5. For example, the reflective surface of the reflective layer 716b may include a curved surface.

The exposure apparatus EX that includes the light emitting device 71b of the second modification instead of the light emitting device 71 can also enjoy the same effects as the exposure apparatus EX that includes the light emitting device 71 described above. .

Note that the light emitting device 71b may include at least one of a diffraction layer 716 and a microlens 716a in addition to the reflective layer 716b. In this case, the light emitting device 71b may be able to more appropriately control the light distribution characteristics of the light EL.

(4-3) Third Modification Next, a light emitting device 71c of a third modification will be described with reference to FIG. 13. FIG. 13 is a cross-sectional view showing the structure of a light emitting device 71c of a third modification.

As shown in FIG. 13, the light emitting device 71c of the third modification differs from the light emitting device 71 described above in that it does not need to include the reflective layer 715. Other features of light emitting device 71c may be the same as other features of light emitting device 71.

Even if the light emitting device 71c does not include the reflective layer 715, the light EL0 generated in the quantum well layer 711 is still reflected by the reflective layer 714. Therefore, the reflective layer 714 can function as a resonator even when not combined with the reflective layer 715. In other words, even when the reflective layer 714 is not combined with the reflective layer 715, it is possible to narrow the band of light EL. Therefore, the exposure apparatus EX that includes the light-emitting device 71c of the third modification instead of the light-emitting device 71 also enjoys the same effects as the exposure apparatus EX that includes the above-described light-emitting device 71. be able to.

Note that in the third modification, as in the first or second modification, the light emitting device 71c may include at least one of a microlens 716a and a reflective layer 716b in addition to or instead of the diffraction layer 716. good.

(4-4) Fourth Modification Next, a fourth modification of the light emitting device 71d will be described with reference to FIG. FIG. 14 is a cross-sectional view showing the structure of a light emitting device 71d of a fourth modification.

As shown in FIG. 14, the light emitting device 71d of the fourth modification includes a quantum well layer 711, a cladding layer 712, and a reflective layer 714, like the light emitting device 71 described above. The light emitting device 71d is particularly different from the light emitting device 71 described above in that it includes a cladding layer 713d instead of the cladding layer 713. Furthermore, the light emitting device 71d differs from the light emitting device 71 described above in that it does not need to include the reflective layer 715 and the diffraction layer 716. The light emitting device 71d has a laminated structure in which a cladding layer 713d, a quantum well layer 711, a cladding layer 712, and a reflective layer 714 are laminated in this order when viewed from a light emitting surface 719 from which the light emitting device 71d emits light EL. There is. Other features of light emitting device 71d may be the same as other features of light emitting device 71. However, since the light-emitting device 71d does not include the reflective layer 715 and the diffraction layer 716, the light exit surface 719 of the light-emitting device 71d covers at least a portion of the surface (particularly the lower surface facing the projection lens 72 side) of the cladding layer 713d. Consisted of. The cladding layer 713d includes a light exit surface 719.

The cladding layer 713d differs from the cladding layer 713 in that it includes an exit portion 7131d that includes a light exit surface 719 on its surface. The injection portion 7131d is a part of the cladding layer 713d. The emission portion 7131d is a portion of the cladding layer 713d that faces the interface between the light emitting device 71d and a space through which the light EL emitted from the light emitting device 71d propagates.

The emission section 7131d has the same function as the diffraction section 716 described above. In other words, the emission section 7131d can control the light distribution characteristics of the light EL from the light emitting device 71d by diffracting the light EL0 incident on the emission section 7131d. Note that the manner in which the light distribution characteristics are controlled by the emission section 7131d in the fourth modification is similar to the manner in which the light distribution characteristics are controlled by the diffraction layer 716 described above. In other words, the emission section 7131d may diffract the light EL0 so that the spread angle θ of the light EL is smaller than that in the case where the light EL0 is not diffracted. Therefore, a detailed explanation of how the light distribution characteristics are controlled by the emission section 7131d will be omitted.

The emission section 7131d may have a similar structure to the above-described diffraction section 716 in order to diffract the light EL0. That is, the injection portion 7131d may have a photonic crystal structure.

Considering that the injection part 7131d has the same function as the diffraction layer 716, the cladding layer 713d is different from the cladding layer 713 in that the cladding layer 713d and the diffraction layer 716 are substantially integrated. It can be said that they are different in that they exist. It can also be said that the cladding layer 713d is different from the cladding layer 713 in that the cladding layer 713d includes a diffraction layer 716. It can be said that the cladding layer 713d is different from the cladding layer 713 in that a part of the cladding layer 713d functions as a diffraction layer 716.

The exposure apparatus EX that includes the light emitting device 71d of the fourth modification instead of the light emitting device 71 can also enjoy the same effects as the exposure apparatus EX that includes the light emitting device 71 described above. .

(4-5) Fifth Modification Next, a light emitting device 71e of a fifth modification will be described with reference to FIG. 15. FIG. 15 is a cross-sectional view showing the structure of a light emitting device 71e of a fifth modification.

In the light emitting device 71 described above, the reflective layers 714 and 715 are used to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. That is, the light emitting device 71 uses reflection of the light EL0 to change the wavelength distribution of the light EL1 and the wavelength distribution of the light EL0. On the other hand, the light emitting device 71e of the fifth modification uses diffraction of the light EL0 to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. There is.

In order to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711 by using the diffraction of the light EL0, the light emitting device 71e uses the diffraction of the light EL0 as shown in FIG. The difference is that a diffraction layer 714e is provided instead of the reflection layers 714 and 715. Other features of light emitting device 71e may be the same as other features of light emitting device 71.

The diffraction layer 714e changes the wavelength distribution of the light EL1 incident on the diffraction layer 716 by diffracting the light EL0 generated in the quantum well layer 711. The diffraction layer 714e diffracts the light EL0 so that the light EL0 has a narrower band than the case where the light EL0 is not diffracted and enters the diffraction layer 716. For example, the diffraction layer 714e imparts one deflection angle to a light component in a resonant wavelength range and causes it to enter the diffraction layer 716, while imparting another deflection angle to a light component in a wavelength range different from the resonant wavelength range. The light EL0 may be diffracted so that it does not enter the diffraction layer 716. As a result, in the fifth modification as well, similarly to the light emitting device 71 up to now, the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the light EL0 generated in the quantum well layer 711 are determined by utilizing the diffraction of the light EL0. The wavelength distribution will be different.

The diffraction layer 714e may use a photonic crystal structure to diffract the light EL0. That is, the diffraction layer 714e may be a layer having a photonic crystal structure. Note that the photonic crystal structure has already been explained with reference to FIGS. 7(a) and 7(b) when explaining the diffraction layer 716, so a detailed explanation thereof will be omitted. However, the characteristics of the photonic crystal structure possessed by the diffraction layer 716 are set from the viewpoint of controlling the light distribution characteristics of the light EL by diffracting the light EL1 by the diffraction layer 716; The characteristic of the photonic crystal structure is that the light EL0 is diffracted by the diffraction layer 714f, so that the wavelength distribution of the light EL1 incident on the diffraction layer 716 is different from the wavelength distribution of the light EL0 generated in the quantum well layer 711. It is set from this perspective. Therefore, the characteristics of the photonic crystal structure that the diffraction layer 714e has may be different from those of the photonic crystal structure that the diffraction layer 716 has. Specifically, the characteristics of the photonic crystal structure of the diffraction layer 714e are such that the light EL0 can be diffracted so that the light EL1 incident on the diffraction layer 716 has a narrow band compared to the light EL0. It may be set to any possible desired characteristic.

The diffraction layer 714b is arranged at a position where it can diffract the light EL0 so that the wavelength distribution of the light EL1 incident on the diffraction layer 716 can be appropriately controlled. In the example shown in FIG. 15, the diffraction layer 714e is disposed on the opposite side of the light exit surface 719 when viewed from the quantum well layer 711. Of course, the diffraction layer 714e may be placed in a position different from that shown in FIG. 15.

The exposure apparatus EX that includes the light emitting device 71e of the fifth modification instead of the light emitting device 71 can also enjoy the same effects as the exposure apparatus EX that includes the light emitting device 71 described above. .

Note that the light emitting device 71e may include at least one of the reflective layers 714 and 715 in addition to the diffraction layer 714e. The light emitting device 71e uses reflection of the light EL in addition to diffraction of the light EL0 in order to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. Good too. Alternatively, in addition to or instead of using diffraction of the light EL0, the light emitting device 71e changes the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. Alternatively, refraction of the light EL0 may be used. The light emitting device 71a of the first modification to the light emitting device 71d of the fourth modification described above also changes the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711. In addition to or instead of using the reflection of the light EL0, at least one of diffraction and refraction of the light EL0 may be used.

Further, the light emitting device 71a of the first modification to the light emitting device 71d of the fourth modification described above may also include a diffraction layer 714e in addition to or in place of at least one of the reflective layer 714 and/or 715. .

(4-6) Sixth Modification Next, a light emitting device 71f of a sixth modification will be described. The light emitting device 71f of the sixth modification is different from the above-described light emitting device 71 and the like including an LED in that it includes a laser diode (LD). In other words, the light emitting device 71f is different from the above-described light emitting device 71 and the like that does not emit laser oscillated light EL in that it emits laser oscillated light EL. Hereinafter, the structure of such a light emitting device 71f of the sixth modification will be described with reference to FIG. 16. FIG. 16 is a cross-sectional view showing the structure of a light emitting device 71f of a sixth modification.

As shown in FIG. 16, the light emitting device 71f includes a quantum well layer 711f, a cladding layer 712f, a cladding layer 713f, a reflective layer 714f, a reflective layer 715f, and a diffraction layer 716f. That is, the stacked structure of the light emitting device 71f itself may be the same as the stacked structure of the light emitting device 71f described above. In this case, the light emitting device 71f may include a laser diode that can emit light EL in a direction perpendicular to the substrate. Examples of laser diodes that can emit light EL in a direction perpendicular to the substrate include a vertical cavity surface emitting laser (VCSEL) and a vertical external cavity surface emitting laser (VECSEL). rface emitting laser ).

Unless otherwise specified, the characteristics of the quantum well layer 711f, cladding layer 712f, cladding layer 713f, reflective layer 714f, reflective layer 715f, and diffraction layer 716f are the same as the quantum well layer 711, cladding layer 712, and cladding layer 716f described above. The characteristics of layer 713, reflective layer 714, reflective layer 715, and diffractive layer 716 may be the same. Therefore, below, features that are different from those of the light emitting device 71 will be mainly explained.

The reflective layers 714f and 715f mainly function as resonators for resonating (particularly laser oscillation) the light EL0 generated in the quantum well layer 711f. Therefore, the light emitting device 71f emits laser oscillated light EL (that is, laser light). Therefore, it can be said that the light emitting device 71f includes a laser oscillation element composed of a quantum well layer 711f, a cladding layer 712f, a cladding layer 713f, a reflective layer 714f, and a reflective layer 715f. Note that since the light EL0 is laser oscillated by the reflective layers 714f and 715f (that is, a standing wave is formed), the reflective layers 714f and 715f, like the reflective layers 714 and 715, narrow the light EL0. It may also function as an optical element. Therefore, also in the sixth modification, the wavelength distribution of the light EL0 that enters the diffraction layer 716f via the reflective layer 715f is different from the wavelength distribution of the light EL0 generated in the quantum well layer 711. Hereinafter, in the sixth modification, the light EL0 incident on the diffraction layer 716f will be referred to as "light EL1" to distinguish it from the light EL0 before entering the diffraction layer 716f (for example, the light EL0 generated in the quantum well layer 711). do.

Also in the sixth modification, the laser oscillated light EL1 is emitted toward the space outside the light emitting device 71f via the diffraction layer 716f. That is, the light EL1 diffracted by the diffraction layer 716f (that is, the light distribution characteristics are controlled) is emitted from the light emitting device 71f as the light EL. Note that when the light emitting device 71 is a laser diode, the phase of the first light emitted as part of the light EL from the first position of the light exit surface 719 is different from the first position of the light exit surface 719. The phases of the second light emitted from the second position as another part of the light EL may have a correlation with each other. The phase of the first light emitted as part of the light EL from the first position of the light exit surface 719 and the phase of the first light emitted as another part of the light EL from a second position different from the first position of the light exit surface 719. The phase of the second light may have a correlation such that the first light and the second light become coherent light with each other.

However, in the sixth modification, the diffraction layer 716f adjusts the light so that the spread angle θ of the light EL is larger than that in the case where the light EL1 from the reflective layer 715f (that is, the laser oscillated light EL1) is not diffracted. Diffract EL1. In other words, the light emitting device 71f of the sixth modification example includes the diffraction layer 716f and FIG. FIG. 12 is a cross-sectional view showing light EL emitted by a light emitting device C71f of a comparative example that is different from a light emitting device 71f of a sixth modification in that there is no light emitting device 71f (that is, light EL whose light distribution characteristics are not controlled by a diffraction layer 716f). As shown in FIG. 17(b), the spread angle θa of the light EL emitted by the light emitting device 71f is larger than the spread angle θb of the light EL emitted by the light emitting device C71f. In particular, the diffraction layer 716f may diffract the light EL1 by increasing the spread angle θ of the light EL so that the spread angle θ of the light EL becomes a desired angle. The characteristics of the diffraction layer 716f may be set to desired characteristics that allow the light EL1 to be diffracted so that the spread angle θ of the light EL is larger than that in the case where the light EL1 is not diffracted. The characteristics of the diffraction layer 716f may be set to desired characteristics that can increase the spread angle θ of the light EL and diffract the light EL1 so that the spread angle θ of the light EL becomes a desired angle.

Similarly to the diffraction layer 716, the diffraction layer 716f makes it easy to set the spread angle θ of the light component in the diffraction wavelength range to a desired angle by diffracting the light component in the diffraction wavelength range. Even if a light component in a wavelength range outside the diffraction wavelength range is diffracted, it is difficult to set the spread angle θ of a light component in a wavelength range outside the diffraction wavelength range to a desired angle (for example, even if a light component in a wavelength range outside the diffraction wavelength range is diffracted, In some cases, the spread angle θ of a light component in a wavelength range other than the diffraction wavelength range is set to a different angle from the desired angle. From the viewpoint of improving the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716, the resonant wavelength range (that is, the wavelength range including the oscillation wavelength of the laser diode) may at least partially overlap with the diffraction wavelength range. good. Conversely, if the characteristics of the reflective layers 714f and 715f and the diffraction layer 716f are set so that the resonant wavelength range and the diffraction wavelength range at least partially overlap, the resonant wavelength range and the diffraction wavelength range do not overlap. Compared to the case, it is expected that the control efficiency of the light distribution characteristics of the light EL by the diffraction layer 716 will be improved.

Note that, similar to the light EL0 repeatedly reflected by the reflective layers 714 and 715 described above, the light EL0 repeatedly reflected by the reflective layers 714f and 715f also corresponds to light in a resonant state. In particular, in the sixth modification, the light EL0 repeatedly reflected by the reflective layers 714f and 715f is laser oscillated light, so that the light EL0 that is repeatedly reflected by the reflective layers 714f and 715f is relatively This corresponds to light in a laser oscillation state in which light components within a narrow resonant wavelength range are oscillated.

Similar to the diffraction layer 716, the diffraction layer 716f diffracts the light EL1 using a photonic crystal structure. The characteristics of the photonic crystal structure included in the diffraction layer 716f may be appropriately set so that the diffraction layer 716f has the above-mentioned characteristics. That is, the characteristics of the photonic crystal structure included in the diffraction layer 716f may be different from the characteristics of the photonic crystal structure included in the above-described diffraction layer 716.

The exposure apparatus EX that includes the light emitting device 71f of the sixth modification instead of the light emitting device 71 can also enjoy the same effects as the exposure apparatus EX that includes the light emitting device 71 described above. . Furthermore, in the sixth modification, the exposure apparatus EX can generate the electron beam EB using a light emitting device 71f including a laser diode. Therefore, the degree of freedom in selecting the type of light source for the optical EL increases. Therefore, if the type of light source of the light EL is appropriately selected according to the characteristics of the exposure apparatus EX, the exposure apparatus EX can efficiently perform photoelectric conversion using the light EL, and the The wafer W can be irradiated with the electron beam EB having the following.

In addition, as shown in FIG. 17(b), unless the laser oscillated light EL1 is diffracted by the diffraction layer 716f, the spread angle θ is extremely small. Therefore, if things continue as they are, technical problems may occur, such as the beam profile of the light EL no longer having the desired characteristics at the position of the photoelectric conversion element 73, or the numerical aperture constraints of the projection lens 72 not being satisfied. do not have. In the sixth modification, taking into consideration that such a technical problem may occur, the diffraction layer 716f can diffract the light EL1 so that the spread angle θ of the light EL becomes large. Therefore, even if the light emitting device 71f including a laser diode is used as a light source for light EL, the exposure apparatus The electron beam EB can be appropriately (eg, efficiently) generated.

Note that in the above description, the light emitting device 71f including a laser diode capable of emitting light EL in a direction perpendicular to the substrate is described. However, the exposure apparatus EX may include a light emitting device 71f' that is different from the light emitting device 71f in that it includes a laser diode that emits light EL in a direction parallel to the substrate. Even in this case, as long as the laser-oscillated light EL1 is diffracted by the diffraction layer 716f, the same effects as described above can be obtained. However, when the light emitting device 71f including a laser diode that emits light EL in a direction parallel to the substrate is used, the light EL emitted in the direction parallel to the substrate is extracted out of the plane by an appropriate extraction method. (In other words, the light EL may be taken out of the plane so that it propagates in a direction perpendicular to the substrate). Of course, in the case where the light emitting device 71f including a laser diode that emits light EL in a direction parallel to the substrate is used, the light EL emitted in the direction parallel to the substrate is changed so that the light EL propagates in the direction parallel to the substrate. It may be taken out of the plane. As an example of a method for extracting the light EL, for example, as shown in FIG. 18(a), an optical waveguide 717f guides the light EL0 emitted from the end face (that is, the mirror end face constituting the resonator) 7111f of the quantum well layer 711f. One method is to curve the In this case as well, as long as the light EL0 from the optical waveguide 717f is diffracted by the diffraction layer 716f, the same effects as described above can be obtained. In addition, as another example of the method for extracting the optical EL, for example, as shown in FIG. One method is to first form an oblique mirror and reflect the light EL in a direction perpendicular to the surface of the substrate. As long as the light EL0 from the plane diffraction grating coupler or the oblique mirror is diffracted by the diffraction layer 716f, the same effects as described above can be obtained.

(4-7) Seventh Modification Next, the exposure apparatus EXg of the seventh modification will be described. In the above description, the exposure apparatus EX exposed the wafer W with the electron beam EB. However, the exposure apparatus EXg may expose workpieces such as the wafer W and the plate P with the light EL from the light emitting device 71.

This will be explained below using FIGS. 19 and 20.

FIG. 19 is a perspective view showing the overall schematic configuration of an exposure apparatus EXg according to a seventh modification. In the seventh modification shown in FIG. 19, a case where a plate P, which is a rectangular substrate, is exposed will be explained as an example. In the following description, the positional relationship of each member will be explained with reference to the XYZ orthogonal coordinate system in FIG. In the XYZ orthogonal coordinate system, the X axis and the Y axis are set to be parallel to the plate P, and the Z axis is set to be perpendicular to the plate P. In the XYZ coordinate system shown in the figure, the XY plane is actually set parallel to the horizontal plane, and the Z axis is set vertically upward. Furthermore, in this embodiment, the direction in which the plate P is moved (scanning direction) is set to the X-axis direction.

The exposure apparatus EXg of the seventh modification includes a plurality of projection optical devices 50. In the seventh modification, an image of a transfer pattern such as a pattern of a liquid crystal display element is transferred to a photosensitive substrate coated with a photosensitive material (resist) while moving the plate P relative to the plurality of projection optical devices 50. An example of a step-and-scan exposure apparatus that transfers images onto a plate P will be described.

FIG. 20 is a diagram showing a schematic configuration of a projection optical device 50 included in an exposure apparatus EXg of a seventh modification. As shown in FIG. 20, each projection optical device 50 has a lens barrel 54 having a cylindrical shape, and includes a variable pattern generating device 56 that forms a transfer pattern on the upper part of the lens barrel 54. As shown in FIG. The lens barrel 54 includes a projection optical system PL that projects the transfer pattern formed by the variable pattern generation device 56 onto a plate P held on a plate stage (not shown). Here, this projection optical system PL has a reduction magnification. Note that the magnification of the projection optical system PL may be the same or may be an enlarged magnification. Here, when the projection optical system PL has a reduction magnification, the numerical aperture of the projection optical system PL on the light emitting device 71 side (the variable pattern generation device 56 side) is smaller than the numerical aperture on the plate P side. Further, the projection optical device 50 may have the same configuration as the projection lens 720 shown in FIG. It may also be a light-emitting image display element.

The variable pattern generation device 56 forms a light emitting pattern based on the transfer pattern transferred onto the plate P.

Further, each projection optical device 50 may include an oblique incidence autofocus system (not shown).

FIG. 21 is a diagram for explaining the arrangement of each projection optical device 50. Seven projection optical devices 50 are arranged at equal intervals in the Y direction in the first row (the closest row in FIG. 21), and seven projection optical devices 50 are arranged at equal intervals in the Y direction in each of the second to sixth rows. Six pieces are arranged in each row, and seven pieces are arranged at equal intervals in the Y direction in the seventh column. Here, each projection optical device 50 is arranged so that the exposure area 51 overlaps with the exposure area 51 of any other adjacent projection optical unit 2 in the Y direction, that is, so that overlapping exposure can be performed.

The transfer pattern generated by the variable pattern generation device 56 of each projection optical device 50 is projected onto the plate P by the projection optical system PL of each projection optical device 50 to form an image of the transfer pattern.

The exposure apparatus EXg also includes a scanning drive system (not shown) having a long stroke for moving the plate stage along the X-axis direction, which is the scanning direction, and a scanning drive system (not shown) that moves the plate stage in the Y-axis direction, which is the direction perpendicular to the scanning direction. A pair of alignment drive systems (not shown) are provided for moving the lens by a minute amount along the Z-axis and rotating it by a minute amount around the Z axis. The position coordinates of the plate stage are measured by a stage position measurement system (not shown) such as a laser interferometer using a movable mirror 52, and the position is controlled.

The variable pattern generation device 56, scanning drive system, alignment drive system, and stage position measurement system described above are controlled by a control device (not shown). This control device sequentially outputs the transfer pattern to be generated in the variable pattern generation device 56 of each projection optical device 50 to the variable pattern generation device 56 in synchronization with the scanning of the plate stage.

In the exposure device EXg of the seventh modification, while moving the plate P relatively to each projection optical device 50, the variable pattern generation device 56 of each projection optical device 50 is used to display the liquid crystal in synchronization with the scanning of the plate P. A transfer pattern such as a pattern of a display element is sequentially generated, and each projection optical device 50 sequentially transfers an image of the generated transfer pattern onto a plate P serving as a photosensitive substrate coated with a photosensitive material (resist). .

In this way, the entire transfer pattern stored in the mask pattern storage device (not shown) is transferred onto the entire exposure area on the plate P (scanning exposure).

According to the exposure apparatus of this seventh modification, the transfer pattern is sequentially generated in the variable pattern generating device 56 in synchronization with the scanning of the plate P, so the cost can be significantly reduced compared to the case where a large-area mask is prepared. can be reduced.

Furthermore, by electrically changing the pattern in the scanning direction, the size of the mask becomes sufficient for the exposure area of each projection optical device 50 in the multi-lens method, and the exposure area can be set smaller. This not only reduces the cost of the mask, but also reduces problems such as deflection and waviness of the mask surface.

The exposure apparatus EXg of the seventh modification uses the narrow-band light EL from the light emitting device 71 described above, so that deterioration of the pattern image due to chromatic aberration of the projection optical system PL can be reduced. Further, since the light EL with a limited spread angle from the light emitting device 71 described above is used, the amount of light that cannot be taken in by the projection optical system can be reduced, and the loss of light amount can be reduced.

(4-8) Other Modifications In the above description, the optical system 3 is a multi-column optical system including a plurality of electron beam devices 5. However, the optical system 3 may also be a single-column optical system comprising a single electron beam device 5.

In the above description, the optical system 3 is supported on the floor F via the frame 13 that constitutes the ceiling of the stage chamber 1. However, the optical system 3 may be suspended and supported on the ceiling of a clean room or a vacuum chamber by a suspension support mechanism with a vibration-proofing function.

In the above description, the casing 6 of the optical system 3 includes a base plate 61 , a peripheral wall 62 , and a cooling plate 63 . However, the housing 6 may not include at least one of the base plate 61, the peripheral wall 62, and the cooling plate 63. In this case, at least some members of the stage chamber 1 may function as at least one of the base plate 61, the peripheral wall 62, and the cooling plate 63. Furthermore, the vacuum chamber 64 and the exposure chamber 14 may be in communication. Alternatively, the optical system 3 may not include the housing 6. In this case, a plurality of electron beam devices 5 may be arranged in the exposure chamber 14 of the stage chamber 1. In order to maintain the degree of vacuum in the exposure chamber 14, the frame 13 of the stage chamber 1 does not need to have the opening 131 formed therein.

In the above description, in the exposure apparatus EX, each electron beam device 5 includes the electron beam generating device 7 (that is, a surface-emitting electron beam source having a plurality of electron emission regions 7331) that respectively emits a plurality of electron beams EB. It is an exposure device. However, the exposure apparatus EX generates a plurality of electron beams EB through a blanking aperture array having a plurality of openings, and individually turns on/off the plurality of electron beams EB according to the drawing pattern to write the pattern onto the wafer W. It may also be an exposure device that performs drawing.

In the above description, the electron beam device 5 is a multi-beam type electron beam device that exposes the wafer W using a plurality of electron beams EB. However, the electron beam device 5 is a single beam type electron beam device that exposes the wafer W using a single electron beam EB. In this case, the electron beam generating device 7 may include a single light emitting device 71 and a single projection lens 72. The exposure apparatus EX may be a variable shaping type exposure apparatus in which each electron beam apparatus 5 shapes the cross section of the electron beam EB irradiated onto the wafer W into a rectangular shape having a variable size. The exposure apparatus EX may be a point beam type exposure apparatus in which each electron beam apparatus 5 irradiates the wafer W with a spot-shaped electron beam EB. The exposure device EX may be a stencil mask type exposure device in which each electron beam device 5 shapes the electron beam EB into a desired shape using a stencil mask in which a beam passage hole of a desired shape is formed.

In the above description, the electron beam generating device 7 is arranged in the through hole 612 of the base plate 61. However, at least a portion of the electron beam generating device 7 may not be disposed in the through hole 612. For example, the light emitting device 71 of the electron beam generation device 7 is placed in the through hole 612, while the photoelectric conversion element 73 of the electron beam generation device 7 is placed below the through hole 612 (that is, in the internal space 811 of the housing 81). may be placed. In this case, the light emitting device 71 may also be used as a vacuum partition wall that isolates the internal space 811 of the housing 81 from the external space of the housing 81. Alternatively, for example, the light emitting device 71 may be arranged above the through hole 612, while the photoelectric conversion element 73 may be arranged at the through hole 612 or below the through hole 612. When the photoelectric conversion element 73 is disposed in the through hole 612, the photoelectric conversion element 73 may also be used as a vacuum partition that isolates the internal space 811 of the housing 81 from the external space of the housing 81. When the photoelectric conversion element 73 is disposed below the through hole 612, a vacuum partition wall is used to isolate the internal space 811 of the housing 81 from the external space of the housing 81 (provided that the vacuum partition wall allows light EL to pass through). may be arranged in the through hole 612. Alternatively, for example, the electron beam generating device 7 may be disposed within the housing 81 (for example, on the lower surface of the base plate 61) without forming the through hole 612 in the base plate 61.

The electron beam generation device 7 does not need to include the plurality of projection lenses 72. In this case, the plurality of lights EL emitted by the plurality of light emitting devices 71 may enter the photoelectric conversion element 73 without passing through the plurality of projection lenses 72. When the electron beam generation device 7 does not include the plurality of projection lenses 72, the plurality of light emitting devices 71 may be integrated with the photoelectric conversion element 73. For example, the plurality of light emitting devices 71 are arranged so that the light EL from the plurality of light emitting devices 71 enters the photoelectric conversion element 73 without passing through a space (for example, at least one of a vacuum space and a gas space). It may be integrated with. When the light EL from the plurality of light emitting devices 71 enters the photoelectric conversion element 73 without passing through a space (for example, at least one of a vacuum space and a gas space), the effects of absorption and scattering of the light EL by gas molecules occur. It disappears. Therefore, the light emitting device 71 emits light at a wavelength that is less absorbed by gas molecules (for example, a wavelength that exists in a part of the visible light region to the infrared light region, and is called an atmospheric window). Not only light-emitting devices but also light-emitting devices that emit light of other wavelengths can be used. As a result, the degree of freedom in the wavelength of the light EL emitted by the light emitting device 71 increases. Therefore, if the wavelength of the light EL is appropriately selected, the exposure apparatus EX can efficiently perform photoelectric conversion using the light EL, and irradiates the wafer W with the electron beam EB having relatively high energy. can do.

In the above description, the light emitting device 71 is a light emitting device having a quantum well structure. However, the light emitting device 71 may be a light emitting device having a double heterojunction structure that does not utilize quantum wells. Alternatively, the light emitting device 71 may be a light emitting device having a homojunction structure.

In the above description, the diffraction layer 716 included in the light emitting device 71 is a layer having a two-dimensional photonic crystal structure in which the dielectric constant changes periodically along each of the X-axis direction and the Y-axis direction. However, the diffraction layer 716 has a one-dimensional photonic crystal structure in which the dielectric constant changes periodically along either the X-axis direction or the Y-axis direction (or one direction included in the XY plane). It may be a layer. Alternatively, the diffraction layer 716 has a three-dimensional photonic crystal structure in which the dielectric constant changes periodically along each of the X-axis direction, Y-axis direction, and Z-axis direction (or each of the three mutually orthogonal directions). It may be a layer with

In the above description, the diffraction layer 716 controls the light distribution characteristics of the light EL by diffracting the light EL1 using the photonic crystal structure. However, the diffraction layer 716 may have a structure different from the photonic crystal structure as long as it can diffract the incident light EL1 and control the light distribution characteristics of the light EL. That is, the diffraction layer 716 may be a layer that does not have a photonic crystal structure. Regarding the diffraction layer 714e of the fifth modification (that is, the diffraction layer 714e that diffracts the light EL0 in order to change the wavelength distribution of the light EL1 incident on the diffraction layer 716 and the wavelength distribution of the light EL0 generated in the quantum well layer 711) Similarly, a layer having a structure different from the photonic crystal structure may be used as long as the wavelength distribution of the light EL0 and the wavelength distribution of the light EL1 can be changed by diffracting the light EL0.

In the above description, the photoelectric conversion element 73 uses the alkaline photoelectric layer 733 to convert the light EL into the electron beam EB. However, the photoelectric conversion element 73 may convert the light EL into the electron beam EB using a different type of photoelectric layer than the alkali photoelectric layer 733. An example of such a photoelectric layer is a metal photoelectric layer.

In the above description, the light emitting device 71 is used to generate the electron beam EB. The electron beam generator 7 includes the light emitting device 71 . However, the light emitting device 71 may be used for purposes other than generating the electron beam EB. For example, the light emitting device 71 may be used in the same way as a regular LED (or any light source). As an example, the light emitting device 71 may be used as a lighting device, a display, a projector, or the like.

In the above description, the electron beam generation device 7 irradiates the alkaline photoelectric layer 733 with the light EL from the light emitting device 71 through the aperture 7321. However, the electron beam generating device 7 may irradiate the alkaline photoelectric layer 733 with the light EL from the light emitting device 71 without passing through the aperture 7321. For example, if the light emitting device 71 is capable of emitting light EL having a desired cross-sectional shape (for example, a shape corresponding to the aperture 7321), the electron beam generating device 7 can emit light EL from the light emitting device 71 without passing through the aperture 7321. The alkaline photoelectric layer 733 may be irradiated with the light EL. In this case, the photoelectric conversion element 73 does not need to include the light shielding film 732.

In the above description, the photoelectric conversion element 73 is an optical element in which the plate member 731, the light shielding film 732, and the alkaline photoelectric layer 733 are integrated. In other words, the photoelectric conversion element 73 is an optical element in which a member for forming the aperture 7321 (that is, the light shielding film 732) and a member for performing photoelectric conversion (that is, the alkaline photoelectric layer 733) are integrated. However, the member for forming the aperture 7321 and the member for performing photoelectric conversion may be separate bodies. In this case, the member for forming the aperture 7321 may be movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. A member for performing photoelectric conversion may be movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. The light emitting device 71 may be movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction.

In the above description, the electron beam optical system 8 includes a housing 81 , an accelerator 82 , a focusing lens 83 , an aperture plate 84 , an objective lens 85 , and a backscattered electron detection device 86 . However, the electron beam optical system 8 may not include at least one of the housing 81, the accelerator 82, the electron lens 83, the aperture plate 84, the objective lens 85, and the backscattered electron detection device 86.

In the above description, the exposure apparatus EX is used for complementary lithography. However, the exposure apparatus EX may be used for purposes other than complementary lithography. For example, the exposure apparatus EX may be used to expose the wafer W so as to draw a pattern (for example, a pattern of one semiconductor chip or a pattern of a plurality of semiconductor chips) on the wafer W with the electron beam EB. , it may be used for exposing a wafer W so that a pattern of a minute mask is transferred onto the wafer W with an electron beam EB. In this case, the exposure device EX may be a batch transfer type exposure device that transfers a certain pattern from the mask to the wafer W all at once. Alternatively, the exposure device EX may be an exposure device using a division transfer method that can perform exposure at a higher throughput than a batch transfer method. An exposure apparatus using a division transfer method divides a pattern to be transferred onto a wafer W into multiple small areas on a mask that are smaller in size than one shot area, and transfers the patterns of these multiple small areas onto the wafer W. do. Incidentally, an exposure apparatus using a divisional transfer method is a reduction method in which an electron beam EB is irradiated onto a certain area of a mask having a certain pattern, and the image of the pattern in the area irradiated with the EB of the electron beam is reduced and transferred using a projection lens. There are also transfer type exposure devices.

The exposure device EX may be a scanning stepper. The exposure device EX may be a stationary exposure device such as a stepper. The exposure apparatus EX may be a step-and-stitch type reduction projection exposure apparatus that combines at least part of one shot area with at least part of another shot area.

In the above description, in the exposure apparatus EX, the wafer W is individually loaded onto the wafer stage 22. However, the transport member (for example, a shuttle) may be loaded onto the wafer stage 22 while the wafer W is held by the transport member (for example, a shuttle).

In the above description, the exposure target of the exposure apparatus EX is the wafer W (for example, a semiconductor substrate for manufacturing a semiconductor device). However, the exposure target of the exposure apparatus EX may be any substrate. For example, the exposure apparatus EX may be an exposure apparatus for manufacturing an organic EL, a thin film magnetic head, an image sensor (such as a CCD), a micromachine, or a DNA chip. For example, the exposure device EX may be an exposure device for drawing a pattern on a square glass plate or a silicon wafer.

In the above description, the electron beam device 5 is used to expose the wafer W. However, the electron beam device 5 may be used for a purpose other than exposing the wafer W. Specifically, any device that irradiates the target with the electron beam EB may include the electron beam device 5. For example, any device that performs predetermined processing (for example, processing) on a target by irradiating the target with the electron beam EB may include the electron beam device 5. For example, an electron microscope, a three-dimensional printer that performs additive manufacturing, or the like may be equipped with the electron beam device 5.

A device such as a semiconductor device may be manufactured through the steps shown in FIG. 22. The steps for manufacturing the device are step S201 of designing the function and performance of the device, step S202 of generating an exposure pattern based on the design of function and performance (that is, an exposure pattern by electron beam EB), and step S202 of creating a base material for the device. Step S203 of manufacturing the wafer W, Step S204 of exposing the wafer W using the electron beam EB according to the generated exposure pattern and developing the exposed wafer W, and device assembly processing (dicing processing, bonding processing, packaging processing) It may also include step S205 including processing (such as processing) and step S206 of inspecting the device.

At least some of the constituent features of each of the above-described embodiments can be combined as appropriate with at least some of the other constituent features of each of the above-described embodiments. Some of the constituent elements of each embodiment described above may not be used. In addition, to the extent permitted by law, the disclosures of all publications and US patents cited in each of the above-mentioned embodiments are incorporated into the description of the main text.

The present invention is not limited to the embodiments described above, and can be modified as appropriate within the scope or idea of the invention that can be read from the claims and the entire specification, and light-emitting devices with such modifications, A light emitting method, an exposure apparatus, an exposure method, and a device manufacturing method are also included within the technical scope of the present invention.

EX exposure device 1 stage chamber 2 stage system 3 optical system 5 electron beam device 6 housing 7 electron beam generation device 71 light emitting device 711 quantum well layer 712, 713 cladding layer 7131d injection section 714, 715 reflective layer 716 diffraction layer 716a microlens 716b Reflective layer 719 Light exit surface 72 Projection lens 73 Photoelectric conversion layer 731 Plate member 732 Light shielding film 7321 Aperture 733 Alkaline photoelectric layer 8 Electron beam optical system EL Light EB Electron beam

Claims (34)

a light-emitting device that emits light from a light-emitting surface;
an irradiation optical system that irradiates a target with light from the light emitting device;
The light emitting device includes:
A light emitting element that emits light,
a first optical element into which light from the light emitting element enters;
Narrowing the spread angle so that the spread angle of the light emitted from the light exit surface via the first optical element corresponds to the numerical aperture of the light emitting device side of the irradiation optical system. comprising a second optical element;
The irradiation optical system forms an image of the light emitting surface of the light emitting device on the target. A light irradiation device. The light irradiation device according to claim 1, wherein the irradiation optical system has a reduction magnification. a light-emitting device that emits light from a light-emitting surface;
an irradiation optical system that irradiates a target with light from the light emitting device;
The light emitting device includes:
A light emitting element that emits light,
a first optical element into which light from the light emitting element enters;
Narrowing the spread angle so that the spread angle of the light emitted from the light exit surface via the first optical element corresponds to the numerical aperture of the light emitting device side of the irradiation optical system. comprising a second optical element;
The irradiation optical system has a reduction magnification. Light irradiation device. The light irradiation device according to any one of claims 1 to 3 , wherein the numerical aperture of the irradiation optical system on the light emitting device side is smaller than the numerical aperture of the irradiation optical system on the target side. a light-emitting device that emits light from a light-emitting surface;
an irradiation optical system that irradiates a target with light from the light emitting device;
The light emitting device includes:
A light emitting element that emits light,
a first optical element into which light from the light emitting element enters;
Narrowing the spread angle so that the spread angle of the light emitted from the light exit surface via the first optical element corresponds to the numerical aperture of the light emitting device side of the irradiation optical system. comprising a second optical element;
The numerical aperture of the light emitting device side of the irradiation optical system is smaller than the numerical aperture of the target side of the irradiation optical system. having a plurality of the light emitting devices;
Light from a first light emitting device among the plurality of light emitting devices is irradiated onto a first position of the target, and light from a second light emitting device different from the first light emitting device among the plurality of light emitting devices is irradiating the target. The light irradiation device according to any one of claims 1 to 5 , wherein a second position different from the first position is irradiated. The light irradiation device according to any one of claims 1 to 6 , comprising a plurality of said irradiation optical systems. The light irradiation device according to any one of claims 1 to 7 , wherein the light incident on the second optical element has a wavelength distribution different from the wavelength distribution of the light from the light emitting element. the second optical element deflects light passing through the second optical element;
The light irradiation device according to claim 8 , wherein a deflection angle of the light passing through the second optical element differs depending on the wavelength of the light. The first optical element narrows the light from the light emitting element,
9. The second optical element is capable of controlling a spread angle of a light component in a second wavelength range that at least partially overlaps with the first wavelength range of the light narrowed by the first optical element. 9. The light irradiation device according to 9 . a first portion provided between the first optical element and the light exit surface;
a second portion provided between the first portion and the light exit surface;
The light irradiation device according to any one of claims 8 to 10 , wherein the light emitting element is located between the first part and the second part. The light irradiation device according to claim 11 , wherein the first and second portions are made of semiconductor. The light irradiation device according to claim 11 or 12 , wherein light traveling inside the first and second portions and the light emitting element resonates. The first optical element adjusts the wavelength distribution such that the spectral distribution regarding the wavelength of the light from the first optical element is narrow-band with respect to the spectral distribution regarding the wavelength of the light from the light emitting element. The light irradiation device according to any one of claims 8 to 13 . The first optical element adjusts the wavelength distribution so that the half-width of the spectral distribution of the light from the first optical element is smaller than the half-width of the spectral distribution regarding the wavelength of the light from the light emitting element. The light irradiation device according to any one of claims 8 to 14 . The first optical element is arranged such that the peak value of the spectral distribution regarding the wavelength of the light from the first optical element is larger than the peak value of the spectral distribution regarding the wavelength of the light from the light emitting element. The light irradiation device according to any one of claims 8 to 15 , which controls wavelength distribution. The light irradiation device according to any one of claims 1 to 16 , wherein the second optical element controls the wavelength distribution of the light using diffraction of the light. The light irradiation device according to any one of claims 1 to 17 , wherein the second optical element includes a diffraction element that diffracts the light. The light irradiation device according to claim 18 , wherein the diffraction element includes an element whose dielectric constant changes periodically along a predetermined direction. The light irradiation device according to claim 18 or 19 , wherein the diffraction element includes an element whose refractive index changes periodically along a predetermined direction. The light irradiation device according to any one of claims 18 to 20 , wherein the diffraction element includes an element having a photonic crystal structure. The light irradiation according to claim 21 , wherein the diffraction element includes at least one of an element having a one-dimensional photonic crystal structure, an element having a two-dimensional photonic crystal structure, and an element having a three-dimensional photonic crystal structure. Device. The diffraction element is an element whose dielectric constant changes periodically along at least one of a first direction, a second direction intersecting the first direction, and a third direction intersecting the first and second directions. The light irradiation device according to any one of claims 18 to 22 . In the diffraction element, a first region portion having a first dielectric constant is arranged in a second region portion having a dielectric constant different from the first dielectric constant along each of the first and second directions. including periodically distributed elements,
The light irradiation device according to claim 23 , wherein the first region portions are distributed in a grid pattern within a plane along each of the first and second directions. In the diffraction element, a first region portion having a first dielectric constant is arranged in a second region portion having a dielectric constant different from the first dielectric constant along each of the first and second directions. including periodically distributed elements,
The light irradiation device according to claim 23 or 24 , wherein the first region portions are distributed in a triangular lattice shape within a plane along each of the first and second directions. The light irradiation device according to claim 24 or 25 , wherein the first and second directions are parallel to an in-plane direction of the light exit surface. 27. The dielectric constant changes periodically at a period determined according to a desired wavelength corresponding to a peak value of a spectral distribution regarding the wavelength of the light passing through the first optical element. The light irradiation device described. The first optical element narrows the spectral distribution regarding the wavelength of the light around a peak value included in a specific wavelength range, compared to before controlling the wavelength distribution,
The light irradiation device according to any one of claims 23 to 27 , wherein the dielectric constant changes periodically with a period determined according to the specific wavelength range. The light irradiation device according to any one of claims 1 to 28 , wherein a surface of the second optical element includes the light exit surface. The light irradiation device according to any one of claims 1 to 29 , wherein the light emitting device is an LED (Light Emitting Diode). The phase of the light emitted from the first position on the light exit surface and the phase of the light emitted from the second position different from the first position on the light exit surface are different from each other. The light irradiation device according to any one of the items. An exposure device that exposes a substrate,
An exposure apparatus comprising the light irradiation apparatus according to any one of claims 1 to 31 . Emitting the light from the light emitting device of the light irradiation device according to any one of claims 1 to 31 ;
An exposure method comprising irradiating the target with the light from the light emitting surface of the light emitting device. A device manufacturing method including a lithography process,
The lithography process includes:
forming a line and space pattern on the target;
A device manufacturing method comprising: cutting a line pattern constituting the line and space pattern using the exposure method according to claim 33 .

Images