WO2020026671A1 - Heat treatment apparatus - Google Patents

Heat treatment apparatus Download PDF

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Publication number
WO2020026671A1
WO2020026671A1 PCT/JP2019/026045 JP2019026045W WO2020026671A1 WO 2020026671 A1 WO2020026671 A1 WO 2020026671A1 JP 2019026045 W JP2019026045 W JP 2019026045W WO 2020026671 A1 WO2020026671 A1 WO 2020026671A1
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WO
WIPO (PCT)
Prior art keywords
heat treatment
semiconductor wafer
chamber
treatment apparatus
trap
Prior art date
Application number
PCT/JP2019/026045
Other languages
French (fr)
Japanese (ja)
Inventor
和彦 布施
森　和也
郁 松尾
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020026671A1 publication Critical patent/WO2020026671A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D8/00—Cold traps; Cold baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Definitions

  • the present invention relates to a heat treatment apparatus for heating a thin precision electronic substrate (hereinafter simply referred to as a “substrate”) such as a semiconductor wafer by light irradiation or the like.
  • a substrate such as a semiconductor wafer by light irradiation or the like.
  • Flash lamp annealing uses a xenon flash lamp (hereinafter, simply referred to as a xenon flash lamp when simply referred to as a "flash lamp”) to irradiate the surface of the semiconductor wafer with flash light, thereby extremely exposing only the surface of the semiconductor wafer.
  • a xenon flash lamp hereinafter, simply referred to as a xenon flash lamp when simply referred to as a "flash lamp”
  • the xenon flash lamp has an emission spectral distribution from the ultraviolet to the near infrared, which has a shorter wavelength than that of a conventional halogen lamp, and substantially matches the basic absorption band of a silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the transmitted light is small and the temperature of the semiconductor wafer can be rapidly raised. In addition, it has been found that when the flash light is irradiated for a very short time of several milliseconds or less, only the vicinity of the surface of the semiconductor wafer can be selectively heated.
  • Such flash lamp annealing is used for a process requiring heating for an extremely short time, for example, activation of impurities typically implanted into a semiconductor wafer.
  • the surface of the semiconductor wafer By irradiating the surface of the semiconductor wafer into which impurities are implanted by the ion implantation method with flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature for a very short time, and the impurities can be diffused deeply. Only the impurity activation can be performed without causing the impurity activation.
  • Patent Document 1 discloses that a semiconductor thin film of gallium arsenide containing tin, germanium, lead, or the like is subjected to flash lamp annealing to obtain a semiconductor thin film with high carrier mobility and high quality. ing.
  • a scrubber and an exclusion device are connected to factory exhaust as a measure to prevent harmful substances such as arsenic from being released into the atmosphere.
  • incorporating such a scrubber or exclusion device into a flash lamp annealing device is not realistic from the viewpoint of cost performance and footprint.
  • the present invention has been made in view of the above problems, and has as its object to provide a heat treatment apparatus capable of preventing harmful substances from being discharged to the outside with a simple configuration.
  • a first aspect of the present invention is directed to a heat treatment apparatus for heating a substrate, wherein a chamber for housing the substrate, a heating source for heating the substrate housed in the chamber, An exhaust path for exhausting the atmosphere, and a trap section provided in the exhaust path and capturing a substance contained in the atmosphere. And a cooling unit for cooling the cooling unit.
  • the trap unit further includes a trap plate with which the airflow cooled by the cooling unit collides, inside the housing.
  • the trap unit includes a storage unit that stores a collection substrate to which the substance deposited by cooling the airflow is attached. It is further provided inside the housing.
  • the heating source includes a lamp for irradiating the substrate with light to heat the substrate.
  • the substance is arsenic.
  • the trap section provided in the exhaust path is included in the atmosphere because the cooling section that cools the airflow passing through the casing is provided inside the casing.
  • the harmful substance can be prevented from being discharged outside by a simple configuration.
  • the trap unit since the trap unit includes the trap plate against which the airflow cooled by the cooling unit collides, it is possible to capture harmful substances more reliably.
  • the trap section since the trap section includes the storage section that stores the collection substrate to which the substance deposited by cooling the airflow is attached, the trap section is analyzed. By doing so, the capture of harmful substances can be confirmed.
  • FIG. 1 is a longitudinal sectional view showing the configuration of the heat treatment apparatus 1 according to the present invention.
  • the heat treatment apparatus 1 of FIG. 1 is a flash lamp annealing apparatus that heats a semiconductor wafer W having a disk shape as a substrate by irradiating the semiconductor wafer W with flash light.
  • the size of the semiconductor wafer W to be processed is not particularly limited, but is, for example, ⁇ 300 mm or ⁇ 450 mm ( ⁇ 300 mm in the present embodiment).
  • a semiconductor thin film of gallium arsenide is formed on the semiconductor wafer W before being loaded into the heat treatment apparatus 1, and the heat treatment performed by the heat treatment apparatus 1 activates the impurities implanted into the gallium arsenide. Note that, in FIG. 1 and each of the following drawings, the dimensions and the numbers of the respective parts are exaggerated or simplified as necessary for easy understanding.
  • the heat treatment apparatus 1 includes a chamber 6 for accommodating the semiconductor wafer W, a flash heating unit 5 containing a plurality of flash lamps FL, and a halogen heating unit 4 containing a plurality of halogen lamps HL.
  • a flash heating unit 5 is provided above the chamber 6, and a halogen heating unit 4 is provided below the chamber 6.
  • the heat treatment apparatus 1 further includes a holding unit 7 that holds the semiconductor wafer W in a horizontal position inside the chamber 6, a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the outside of the apparatus, Is provided.
  • the heat treatment apparatus 1 includes a trap box 90 for removing harmful arsenic from the gas exhausted from the chamber 6.
  • the heat treatment apparatus 1 includes a control unit 3 that controls each operation mechanism provided in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to execute the heat treatment of the semiconductor wafer W.
  • the chamber 6 is configured by mounting a quartz chamber window above and below a cylindrical chamber side 61.
  • the chamber side portion 61 has a substantially cylindrical shape with an open top and bottom.
  • the upper opening is provided with an upper chamber window 63 mounted and closed, and the lower opening is provided with a lower chamber window 64 mounted and closed.
  • the upper chamber window 63 constituting the ceiling of the chamber 6 is a disk-shaped member formed of quartz, and functions as a quartz window for transmitting flash light emitted from the flash heating unit 5 into the chamber 6.
  • the lower chamber window 64 constituting the floor of the chamber 6 is also a disc-shaped member formed of quartz, and functions as a quartz window for transmitting light from the halogen heating unit 4 into the chamber 6.
  • Reflection ring 68 is attached to the upper part of the inner wall surface of chamber side part 61, and reflection ring 69 is attached to the lower part.
  • the reflection rings 68 and 69 are both formed in an annular shape.
  • the upper reflecting ring 68 is mounted by being fitted from above the chamber side 61.
  • the lower reflective ring 69 is mounted by being fitted from below the chamber side 61 and fastened with screws (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side 61.
  • the space inside the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61 and the reflection rings 68 and 69 is defined as the heat treatment space 65.
  • a concave portion 62 is formed on the inner wall surface of the chamber 6. That is, a concave portion 62 is formed which is surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, a lower end surface of the reflection ring 68, and an upper end surface of the reflection ring 69. .
  • the concave portion 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6 and surrounds the holding portion 7 that holds the semiconductor wafer W.
  • the chamber side 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance.
  • a transfer opening (furnace opening) 66 for carrying the semiconductor wafer W in and out of the chamber 6 is formed in the chamber side 61.
  • the transport opening 66 can be opened and closed by a gate valve 185.
  • the transport opening 66 is connected to the outer peripheral surface of the concave portion 62 in communication. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W is transferred from the transfer opening 66 through the concave portion 62 to the heat treatment space 65 and unloaded from the heat treatment space 65. It can be performed.
  • the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the chamber 6 becomes a closed space.
  • a through hole 61a is formed in the chamber side 61.
  • the radiation thermometer 20 is attached to a portion of the outer wall surface of the chamber side 61 where the through hole 61a is provided.
  • the through hole 61a is a cylindrical hole for guiding infrared light emitted from the lower surface of the semiconductor wafer W held by a susceptor 74 described later to the radiation thermometer 20.
  • the through hole 61a is provided to be inclined with respect to the horizontal direction so that the axis of the through hole 61a intersects with the main surface of the semiconductor wafer W held by the susceptor 74.
  • a transparent window 21 made of a barium fluoride material that transmits infrared light in a wavelength range that can be measured by the radiation thermometer 20 is mounted.
  • a gas supply hole 81 for supplying a processing gas to the heat treatment space 65 is formed in an upper portion of an inner wall of the chamber 6.
  • the gas supply hole 81 is formed above the concave portion 62 and may be provided on the reflection ring 68.
  • the gas supply hole 81 is connected to a gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the chamber 6.
  • the gas supply pipe 83 is connected to a processing gas supply source 85.
  • An air supply valve 84 is interposed in the middle of the path of the gas supply pipe 83. When the air supply valve 84 is opened, the processing gas is supplied from the processing gas supply source 85 to the buffer space 82.
  • the processing gas flowing into the buffer space 82 flows so as to expand in the buffer space 82 having a smaller fluid resistance than the gas supply holes 81, and is supplied from the gas supply holes 81 into the heat treatment space 65.
  • an inert gas such as nitrogen (N 2 ), a reactive gas such as hydrogen (H 2 ), ammonia (NH 3 ), or a mixed gas obtained by mixing them can be used.
  • nitrogen gas nitrogen gas
  • a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the chamber 6.
  • the gas exhaust hole 86 is formed at a position lower than the concave portion 62, and may be provided on the reflection ring 69.
  • the gas exhaust hole 86 is connected to a gas exhaust pipe 88 via a buffer space 87 formed in an annular shape inside the side wall of the chamber 6.
  • the gas exhaust pipe 88 is connected to the exhaust part 190.
  • An exhaust valve 89 and a trap box 90 are interposed in the middle of the path of the gas exhaust pipe 88. When the exhaust valve 89 is opened, the gas in the heat treatment space 65 is exhausted from the gas exhaust hole 86 to the gas exhaust pipe 88 via the buffer space 87.
  • a plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the chamber 6 or may be slit-shaped.
  • an exhaust utility of a factory where the vacuum pump and the heat treatment apparatus 1 are installed can be used.
  • a vacuum pump is adopted as the exhaust unit 190, the air supply valve 84 is closed, and the atmosphere in the heat treatment space 65, which is a closed space, is exhausted without supplying any gas from the gas supply hole 81, the inside of the chamber 6 becomes a vacuum atmosphere The pressure can be reduced to Further, even when a vacuum pump is not used as the exhaust unit 190, the inside of the chamber 6 can be depressurized to a pressure lower than the atmospheric pressure by performing the exhaust without supplying the gas from the gas supply hole 81. .
  • FIG. 8 is a perspective view showing the configuration of the trap box 90.
  • FIG. 9 is a front view of the trap box 90
  • FIG. 10 is a plan view of the trap box 90.
  • an XYZ orthogonal coordinate system is used in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane in order to clarify the directional relationship.
  • the trap box 90 is provided in the path of the gas exhaust pipe 88.
  • the installation position of the trap box 90 is not particularly limited, but it is preferable that the trap box 90 be provided as close to the gas exhaust hole 86 of the chamber 6 as possible in the course of the gas exhaust pipe 88.
  • the trap box 90 includes a radiator 92, a trap plate 95, and a wafer accommodating portion 96 as main components inside a casing 91.
  • the housing 91 is a hollow rectangular parallelepiped box.
  • the housing 91 is provided with an air supply port 97 for taking in gas inside and an exhaust port 98 for discharging gas inside.
  • the supply port 97 and the exhaust port 98 are connected to a gas exhaust pipe 88 that guides the gas exhausted from the chamber 6.
  • the radiator 92 is provided on the entire cross section (YZ cross section) of the housing 91 so as to separate the internal space of the housing 91.
  • the radiator 92 includes a plurality of cooling pipes 93, a tank (not shown), and a circulation pump.
  • the plurality of cooling pipes 93 are arranged in parallel at predetermined intervals.
  • Each of the plurality of cooling pipes 93 is formed of a material having excellent heat conductivity, for example, aluminum.
  • the cooling liquid for example, cooling water
  • the cooling liquid whose temperature is controlled to a predetermined temperature stored in the tank is configured to flow and circulate through the plurality of cooling pipes 93 by a circulation pump.
  • the gas passing between the plurality of cooling pipes 93 is cooled by the cooling pipes 93 through which the cooling liquid flows.
  • the radiator 92 Since the radiator 92 is provided on the entire cross section of the casing 91, it cools the entire airflow passing through the casing 91.
  • the cooling pipe 93 may have a meandering shape with a large surface area, or a plurality of cooling pipes 93 may be arranged in a grid.
  • the trap plate 95 is a plate-like member provided in the housing 91 in parallel with the radiator 92. As shown in FIGS. 8 and 9, the trap plate 95 is provided so as to shield an upper part of a cross section (YZ cross section) of the housing 91. Therefore, the lower part of the trap plate 95 is open in the cross section of the housing 91 in which the trap plate 95 is installed.
  • the material of the trap plate 95 is not particularly limited, for example, a vinyl chloride resin can be used.
  • the radiator 92 and the trap plate 95 are provided detachably with respect to the housing 91. Therefore, the radiator 92 and the trap plate 95 can be exchanged as needed.
  • the wafer accommodating portion 96 is installed below the trap plate 95 inside the housing 91.
  • the wafer accommodating section 96 places the measurement wafer MW in a horizontal position below the trap plate 95. That is, the wafer accommodating portion 96 places the measurement wafer MW perpendicular to the trap plate 95.
  • the measurement wafer MW is a silicon substrate having the same shape and size as a general semiconductor wafer W. However, no pattern formation or film formation processing has been performed on the measurement wafer MW.
  • FIG. 2 is a perspective view showing the overall appearance of the holding unit 7.
  • the holding unit 7 includes a base ring 71, a connecting unit 72, and a susceptor 74.
  • the base ring 71, the connecting portion 72, and the susceptor 74 are all formed of quartz. That is, the entire holding section 7 is formed of quartz.
  • the base ring 71 is an arc-shaped quartz member in which a part is omitted from the ring shape.
  • the missing portion is provided to prevent interference between a transfer arm 11 of the transfer mechanism 10 described below and the base ring 71.
  • the base ring 71 is supported on the wall surface of the chamber 6 by being placed on the bottom surface of the concave portion 62 (see FIG. 1).
  • a plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the ring shape.
  • the connecting portion 72 is also a quartz member, and is fixed to the base ring 71 by welding.
  • FIG. 3 is a plan view of the susceptor 74.
  • FIG. 4 is a sectional view of the susceptor 74.
  • the susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77.
  • the holding plate 75 is a substantially circular plate-shaped member formed of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger planar size than the semiconductor wafer W.
  • a guide ring 76 is provided on the periphery of the upper surface of the holding plate 75.
  • the guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is ⁇ 300 mm, the inner diameter of the guide ring 76 is ⁇ 320 mm.
  • the inner circumference of the guide ring 76 has a tapered surface that widens upward from the holding plate 75.
  • the guide ring 76 is formed of the same quartz as the holding plate 75.
  • the guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.
  • a region inside the guide ring 76 on the upper surface of the holding plate 75 is a flat holding surface 75a for holding the semiconductor wafer W.
  • a plurality of substrate support pins 77 are provided upright on the holding surface 75 a of the holding plate 75.
  • a total of 12 substrate support pins 77 are erected at every 30 ° along the outer circumference of the holding surface 75a (the inner circumference of the guide ring 76).
  • the diameter of the circle in which the twelve substrate support pins 77 are arranged is smaller than the diameter of the semiconductor wafer W.
  • Each substrate support pin 77 is formed of quartz.
  • the plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be processed integrally with the holding plate 75.
  • the four connecting portions 72 erected on the base ring 71 and the peripheral edge of the holding plate 75 of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portion 72.
  • the holder 7 is mounted on the chamber 6.
  • the holding plate 75 of the susceptor 74 is in a horizontal posture (a posture in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 is a horizontal plane.
  • the semiconductor wafer W carried into the chamber 6 is placed and held in a horizontal posture on the susceptor 74 of the holding unit 7 mounted on the chamber 6.
  • the semiconductor wafer W is supported by twelve substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 contact the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the twelve substrate support pins 77 (the distance from the upper end of the substrate support pins 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W is placed in a horizontal posture by the twelve substrate support pins 77. Can be supported.
  • the semiconductor wafer W is supported by the plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75.
  • the thickness of the guide ring 76 is larger than the height of the substrate support pins 77. Therefore, the horizontal displacement of the semiconductor wafer W supported by the plurality of substrate support pins 77 is prevented by the guide ring 76.
  • the holding plate 75 of the susceptor 74 has an opening 78 penetrating vertically.
  • the opening 78 is provided for the radiation thermometer 20 to receive radiation light (infrared light) radiated from the lower surface of the semiconductor wafer W. That is, the radiation thermometer 20 receives the light radiated from the lower surface of the semiconductor wafer W through the opening 78 and the transparent window 21 attached to the through hole 61a of the chamber side portion 61, and reduces the temperature of the semiconductor wafer W. Measure.
  • the holding plate 75 of the susceptor 74 is provided with four through holes 79 through which the lift pins 12 of the transfer mechanism 10 to be described later pass for transferring the semiconductor wafer W.
  • FIG. 5 is a plan view of the transfer mechanism 10.
  • FIG. 6 is a side view of the transfer mechanism 10.
  • the transfer mechanism 10 includes two transfer arms 11.
  • the transfer arm 11 is formed in a circular arc shape along the generally annular concave portion 62.
  • Each transfer arm 11 is provided with two lift pins 12 standing upright.
  • the transfer arm 11 and the lift pins 12 are formed of quartz.
  • Each transfer arm 11 is rotatable by a horizontal movement mechanism 13.
  • the horizontal movement mechanism 13 moves the pair of transfer arms 11 to a transfer operation position (solid line position in FIG. 5) where the semiconductor wafer W is transferred to the holding unit 7 and the semiconductor wafer W held by the holding unit 7.
  • the horizontal movement is performed between a retracted position (a position indicated by a two-dot chain line in FIG. 5) that does not overlap in a plan view.
  • the horizontal movement mechanism 13 may be configured to rotate each transfer arm 11 by an individual motor, or may be rotated by linking a pair of transfer arms 11 by a single
  • the pair of transfer arms 11 is moved up and down by the elevating mechanism 14 together with the horizontal moving mechanism 13.
  • the lifting mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift pins 12 pass through the through holes 79 (see FIGS. 2 and 3) formed in the susceptor 74, and The upper end of 12 protrudes from the upper surface of susceptor 74.
  • the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, pulls out the lift pins 12 from the through holes 79, and moves the horizontal movement mechanism 13 to open the pair of transfer arms 11, The transfer arm 11 moves to the retreat position.
  • the retracted position of the pair of transfer arms 11 is immediately above the base ring 71 of the holding unit 7.
  • the retreat position of the transfer arm 11 is inside the concave portion 62.
  • An exhaust mechanism (not shown) is also provided near the portion where the driving unit (the horizontal moving mechanism 13 and the elevating mechanism 14) of the transfer mechanism 10 is provided. Is discharged to the outside of the chamber 6.
  • the flash heating unit 5 provided above the chamber 6 includes a light source including a plurality of (30 in this embodiment) xenon flash lamps FL and a light source above the light source. And a reflector 52 provided so as to cover the reflector.
  • a lamp light emission window 53 is mounted on the bottom of the housing 51 of the flash heating unit 5.
  • the lamp light emission window 53 constituting the floor of the flash heating unit 5 is a plate-shaped quartz window made of quartz.
  • the flash lamp FL irradiates the heat treatment space 65 with flash light from above the chamber 6 through the lamp light emission window 53 and the upper chamber window 63.
  • the plurality of flash lamps FL are rod-shaped lamps each having a long cylindrical shape, and each of the plurality of flash lamps FL has a longitudinal direction along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.
  • the area where the plurality of flash lamps FL are arranged is larger than the plane size of the semiconductor wafer W.
  • the xenon flash lamp FL has a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a condenser are disposed at both ends thereof, and is provided on the outer peripheral surface of the glass tube. And a trigger electrode. Since xenon gas is electrically an insulator, electricity does not flow in a glass tube in a normal state even if charges are stored in a capacitor. However, when a high voltage is applied to the trigger electrode to break the insulation, the electricity stored in the capacitor flows instantaneously into the glass tube, and light is emitted by the excitation of xenon atoms or molecules at that time.
  • the flash lamp FL since the electrostatic energy stored in the condenser in advance is converted into an extremely short light pulse of 0.1 to 100 milliseconds, continuous lighting such as a halogen lamp HL is performed. It has a feature that it can emit extremely strong light compared to a light source. That is, the flash lamp FL is a pulsed lamp that emits light instantaneously in a very short time of less than one second. The light emission time of the flash lamp FL can be adjusted by the coil constant of a lamp power supply that supplies power to the flash lamp FL.
  • the reflector 52 is provided above the plurality of flash lamps FL so as to cover the entirety thereof.
  • the basic function of the reflector 52 is to reflect flash light emitted from the plurality of flash lamps FL to the heat treatment space 65 side.
  • the reflector 52 is made of an aluminum alloy plate, and its surface (the surface facing the flash lamp FL) is roughened by blasting.
  • the halogen heating unit 4 provided below the chamber 6 has a plurality of (in this embodiment, 40) halogen lamps HL inside the housing 41.
  • the halogen heating unit 4 heats the semiconductor wafer W by irradiating the heat treatment space 65 from below the chamber 6 through the lower chamber window 64 with a plurality of halogen lamps HL.
  • FIG. 7 is a plan view showing an arrangement of a plurality of halogen lamps HL.
  • the forty halogen lamps HL are arranged in two upper and lower stages. Twenty halogen lamps HL are arranged in an upper stage near the holding unit 7 and 20 halogen lamps HL are arranged in a lower stage farther from the holding unit 7 than the upper stage.
  • Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape.
  • the upper and lower 20 halogen lamps HL are arranged so that their respective longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (that is, along the horizontal direction). I have. Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper and lower stages is a horizontal plane.
  • the arrangement density of the halogen lamps HL in the region opposed to the peripheral portion is higher than the region opposed to the central portion of the semiconductor wafer W held by the holding portion 7 in both the upper and lower stages. I have. That is, in both upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter at the periphery than at the center of the lamp array. For this reason, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W where the temperature is likely to decrease during heating by light irradiation from the halogen heating unit 4.
  • a lamp group composed of the upper halogen lamps HL and a lamp group composed of the lower halogen lamps HL are arranged so as to intersect in a grid pattern. That is, a total of 40 halogen lamps HL are arranged such that the longitudinal direction of the 20 halogen lamps HL arranged in the upper stage and the longitudinal direction of the 20 halogen lamps HL arranged in the lower stage are orthogonal to each other. I have.
  • the halogen lamp HL is a filament type light source which emits light by incandescent the filament by energizing the filament provided inside the glass tube.
  • a gas in which a trace amount of a halogen element (iodine, bromine, or the like) is introduced into an inert gas such as nitrogen or argon is sealed inside the glass tube.
  • a halogen element iodine, bromine, or the like
  • the halogen lamp HL has a characteristic that it has a longer life and can continuously emit strong light as compared with a normal incandescent lamp. That is, the halogen lamp HL is a continuous lighting lamp that emits light continuously for at least one second. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life.
  • a reflector 43 is provided below the two-stage halogen lamp HL in the housing 41 of the halogen heating unit 4 (FIG. 1).
  • the reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the heat treatment space 65 side.
  • the control unit 3 controls the various operation mechanisms described above provided in the heat treatment apparatus 1.
  • the configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 includes a CPU that is a circuit for performing various arithmetic processing, a ROM that is a read-only memory that stores a basic program, a RAM that is a readable and writable memory that stores various information, and control software and data. It has a magnetic disk for storing.
  • the processing in the heat treatment apparatus 1 proceeds when the CPU of the control unit 3 executes a predetermined processing program.
  • the heat treatment apparatus 1 prevents an excessive rise in temperature of the halogen heating unit 4, the flash heating unit 5, and the chamber 6 due to heat energy generated from the halogen lamp HL and the flash lamp FL during the heat treatment of the semiconductor wafer W. Therefore, it has various cooling structures.
  • a water cooling tube (not shown) is provided on the wall of the chamber 6.
  • the halogen heating unit 4 and the flash heating unit 5 have an air cooling structure that forms a gas flow inside and discharges heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash heating unit 5 and the upper chamber window 63.
  • the processing operation in the heat treatment apparatus 1 will be described.
  • the semiconductor wafer W to be processed is a semiconductor substrate having a gallium arsenide semiconductor thin film formed on a silicon base material.
  • the activation of the impurities implanted in the gallium arsenide semiconductor thin film is performed by flash light irradiation heat treatment (annealing) by the heat treatment apparatus 1.
  • the processing procedure of the semiconductor wafer W described below proceeds by the control unit 3 controlling each operation mechanism of the heat treatment apparatus 1.
  • the air supply valve 84 is opened, and the exhaust valve 89 is opened, and air supply and exhaust to the chamber 6 are started.
  • nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65.
  • the exhaust valve 89 is opened, the gas in the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward, and is exhausted from the lower part of the heat treatment space 65.
  • the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W to be processed is carried into the heat treatment space 65 in the chamber 6 via the transfer opening 66 by the transfer robot outside the apparatus.
  • the atmosphere outside the apparatus may be involved when the semiconductor wafer W is loaded, but since the nitrogen gas is continuously supplied to the chamber 6, the nitrogen gas flows out from the transfer opening 66, and Entrapment of an external atmosphere can be minimized.
  • the semiconductor wafer W carried in by the transfer robot advances to a position immediately above the holding unit 7 and stops.
  • the lift pins 12 protrude from the upper surface of the holding plate 75 of the susceptor 74 through the through holes 79.
  • the lift pins 12 rise above the upper ends of the substrate support pins 77.
  • the transfer robot exits the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185.
  • the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holding unit 7 and is held from below in a horizontal posture.
  • the semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on a holding plate 75 and held by a susceptor 74.
  • the semiconductor wafer W is held by the holder 7 with the surface on which the gallium arsenide semiconductor thin film is formed as the upper surface.
  • a predetermined gap is formed between the back surface (main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75.
  • the pair of transfer arms 11 descending to below the susceptor 74 are retracted by the horizontal moving mechanism 13 to the retracted position, that is, to the inside of the concave portion 62.
  • the 40 halogen lamps HL of the halogen heating unit 4 are simultaneously turned on to perform preliminary heating (assist heating). ) Is started.
  • the halogen light emitted from the halogen lamp HL passes through the lower chamber window 64 and the susceptor 74 formed of quartz and irradiates the lower surface of the semiconductor wafer W.
  • the semiconductor wafer W is preheated and the temperature rises. Since the transfer arm 11 of the transfer mechanism 10 is retracted inside the concave portion 62, there is no obstacle to heating by the halogen lamp HL.
  • the temperature of the semiconductor wafer W is measured by the radiation thermometer 20. That is, the radiation thermometer 20 receives infrared light radiated from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78 through the transparent window 21 and measures the temperature of the wafer being heated.
  • the measured temperature of the semiconductor wafer W is transmitted to the control unit 3.
  • the control unit 3 controls the output of the halogen lamp HL while monitoring whether or not the temperature of the semiconductor wafer W which is heated by the irradiation of light from the halogen lamp HL has reached a predetermined preheating temperature T1. That is, the control unit 3 performs feedback control of the output of the halogen lamp HL based on the value measured by the radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1.
  • the control unit 3 After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL to substantially reduce the temperature of the semiconductor wafer W to the preliminary temperature. The heating temperature T1 is maintained.
  • the entire semiconductor wafer W is uniformly heated to the preheating temperature T1.
  • the temperature of the peripheral portion of the semiconductor wafer W where heat radiation tends to occur tends to be lower than that of the central portion, but the arrangement density of the halogen lamp HL in the halogen heating section 4 is:
  • the region facing the peripheral portion is higher than the region facing the center of the substrate W. For this reason, the amount of light applied to the peripheral portion of the semiconductor wafer W where heat radiation easily occurs is increased, and the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made uniform.
  • the flash lamp FL of the flash heating unit 5 irradiates the surface of the semiconductor wafer W held by the susceptor 74 with flash light. At this time, a part of the flash light radiated from the flash lamp FL goes directly into the chamber 6, and the other part is once reflected by the reflector 52 and then goes into the chamber 6. The flash heating of the semiconductor wafer W is performed by the irradiation.
  • the surface temperature of the semiconductor wafer W can be increased in a short time. That is, the flash light emitted from the flash lamp FL is converted into a light pulse in which the electrostatic energy previously stored in the condenser is extremely short, and the irradiation time is extremely short, from about 0.1 millisecond to about 100 milliseconds. It is a strong flash. Then, the surface temperature of the semiconductor wafer W, which is flash-heated by flash light irradiation from the flash lamp FL, instantaneously rises to the processing temperature T2, and after the impurities injected into the semiconductor wafer W are activated, the surface temperature becomes higher. Falls rapidly.
  • the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time, it is possible to activate the impurities while suppressing diffusion of the impurities injected into the semiconductor wafer W due to heat. Can be. Since the time required for activating the impurity is extremely shorter than the time required for thermal diffusion, the activation is performed even in a short time in which diffusion of about 0.1 to 100 milliseconds does not occur. Complete.
  • the halogen lamp HL is turned off after a lapse of a predetermined time.
  • the temperature of the semiconductor wafer W rapidly drops from the preheating temperature T1.
  • the temperature of the semiconductor wafer W during the temperature decrease is measured by the radiation thermometer 20, and the measurement result is transmitted to the control unit 3.
  • the control unit 3 monitors whether or not the temperature of the semiconductor wafer W has dropped to a predetermined temperature based on the measurement result of the radiation thermometer 20.
  • the pair of transfer arms 11 of the transfer mechanism 10 move horizontally again from the retreat position to the transfer operation position and rise, so that the lift pins 12
  • the semiconductor wafer W protruding from the upper surface of the semiconductor wafer 74 and having undergone the heat treatment is received from the susceptor 74.
  • the transfer opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W mounted on the lift pins 12 is unloaded by the transfer robot outside the apparatus, and the semiconductor wafer W is heated in the heat treatment apparatus 1 by heat treatment. Is completed.
  • the semiconductor wafer W on which the gallium arsenide semiconductor thin film is formed is subjected to the heat treatment. It is known that gallium arsenide is released from a semiconductor thin film by outward diffusion when heated to 400 ° C. or higher. If the above preheating temperature T1 is 400 ° C. or higher, arsenic is released from the semiconductor wafer W during preheating by the halogen lamp HL. If the processing temperature T2 is 400 ° C. or higher, arsenic is released from the semiconductor wafer W even during flash heating by the flash lamp FL for a short time. Arsenic released from the semiconductor wafer W exists in the heat treatment space 65 in the chamber 6 as a gas. Arsenic is harmful even in a trace amount, and it is necessary to prevent arsenic released from the semiconductor wafer W from being discharged outside the heat treatment apparatus 1.
  • a trap box 90 is provided in the heat treatment apparatus 1.
  • the exhaust valve 89 When the exhaust valve 89 is opened, the atmosphere in the chamber 6 containing arsenic is exhausted from the gas exhaust hole 86 to the gas exhaust pipe 88.
  • the gas containing arsenic flows through the gas exhaust pipe 88 and flows into the trap box 90 from the air supply port 97.
  • the gas flowing into the trap box 90 from the air supply port 97 passes between the plurality of cooling pipes 93 of the radiator 92.
  • the gas containing arsenic passes between the plurality of cooling tubes 93, it is cooled to room temperature, whereby gaseous arsenic precipitates as a solid.
  • the gas flow cooled by the radiator 92 collides with the trap plate 95.
  • the gas flow colliding with the trap plate 95 changes the direction of the flow downward of the open trap plate 95.
  • the solid arsenic precipitated by cooling is attached to the trap plate 95 and captured.
  • the gas flow that has passed below the trap plate 95 flows out of the exhaust port 98 again into the gas exhaust pipe 88 and is discharged to the exhaust section 190.
  • Arsenic contained in the gas flowing from the air supply port 97 of the trap box 90 is precipitated as a solid by being cooled by the radiator 92, and the deposited arsenic adheres to the trap plate 95 and the measurement wafer MW to be captured. Is done. Accordingly, harmful arsenic is not contained in the gas flowing out from the exhaust port 98 of the trap box 90, and harmless gas is discharged from the exhaust unit 190 to the outside of the heat treatment apparatus 1.
  • arsenic is harmful, it has the property of being precipitated as a solid when cooled to about room temperature.
  • the present invention has been completed by utilizing such characteristics of arsenic.
  • the arsenic is deposited as a solid, and the arsenic is harmful. Has been removed.
  • the arsenic released from the semiconductor wafer W during the heat treatment is collected and rendered harmless by the trap box 90 having a simple configuration in which the radiator 92 and the trap plate 95 are provided inside the casing 91. . Therefore, it is possible to prevent harmful arsenic from being discharged to the outside with a simple configuration without incorporating a scrubber or a special exclusion device.
  • the measurement wafer MW placed in the wafer accommodating portion 96 is taken out, and particles attached to the surface of the measurement wafer MW are analyzed to confirm whether or not arsenic is deposited and captured. Can be. If arsenic is not detected from the surface of measurement wafer MW, or if the amount of arsenic detected is remarkably small, it is suspected that arsenic may not be sufficiently collected by trap box 90.
  • radiator 92 and the trap plate 95 are detachably provided, the radiator 92 and the trap plate 95 which are contaminated by the deposited arsenic can be replaced at an appropriate timing.
  • the radiator 92 and the trap plate 95 may be replaced periodically, or may be replaced based on the state of contamination.
  • the radiator 92, the trap plate 95, and the wafer accommodating portion 96 are provided inside the housing 91.
  • the trap plate 95 and the wafer accommodating portion 96 are not essential elements. It is sufficient that a radiator 92 is provided in the inside. If at least the radiator 92 is provided, the gas discharged from the chamber 6 can be cooled to deposit arsenic as a solid, and the arsenic can be captured by the inner wall surface of the housing 91. Even in this case, it is possible to prevent arsenic from being discharged to the outside.
  • the trap plate 95 is provided as in the above embodiment, the deposited arsenic can be more reliably captured and recovered.
  • the gas flow is cooled by the radiator 92 having the plurality of cooling pipes 93.
  • the present invention is not limited to this.
  • the gas flow is cooled by another cooling mechanism such as a Peltier device. You may make it cool.
  • the semiconductor wafer W may be subjected to a heat treatment by setting the inside of the chamber 6 to a reduced pressure atmosphere. Even in this case, the same effect as in the above embodiment can be obtained by depositing and capturing arsenic released from the semiconductor wafer W in the trap box 90.
  • the inside of the chamber 6 is set to a reduced pressure atmosphere
  • the inside of the trap box 90 is also set to a reduced pressure lower than the atmospheric pressure. Therefore, the material of the trap plate 95 is preferably a metal material that can be used even under reduced pressure.
  • the flash heating unit 5 is provided with 30 flash lamps FL, but the present invention is not limited to this, and the number of flash lamps FL can be any number.
  • the flash lamp FL is not limited to a xenon flash lamp, but may be a krypton flash lamp.
  • the number of halogen lamps HL provided in the halogen heating unit 4 is not limited to 40 but may be any number.
  • the preheating of the semiconductor wafer W is performed by using the filament type halogen lamp HL as a continuous lighting lamp that emits light continuously for 1 second or more.
  • the present invention is not limited to this.
  • the preliminary heating may be performed using a discharge type arc lamp (for example, a xenon arc lamp) as a continuous lighting lamp instead of the halogen lamp HL.
  • the heating source for heating the semiconductor wafer W is not limited to a lamp, and the semiconductor wafer W may be heated by, for example, a hot plate provided with a heater.
  • the substrate to be processed by the heat treatment apparatus 1 is not limited to a semiconductor wafer, but may be a glass substrate used for a flat panel display such as a liquid crystal display device or a substrate for a solar cell.
  • the film formed on the substrate is not limited to gallium arsenide, and may be any film containing arsenic. Further, the technology according to the present invention is suitable for heat treatment of a substrate that releases not only arsenic but also harmful substances that precipitate as a solid when cooled.

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Abstract

A trap box is provided partway along the pathway of a gas exhaust pipe for discharging a gas from inside a chamber. The gas, which includes arsenic released from a semiconductor wafer due to a heat treatment inside the chamber, flows into the trap box and is cooled by a radiator, whereby the arsenic is deposited as a solid. The cooled gaseous flow collides with a trap plate, whereby the deposited arsenic adheres to the trap plate and is captured. A non-hazardous gas from which arsenic has been captured and removed is discharged to outside of the apparatus. Through this simple configuration, in which the radiator and the trap plate are provided inside a casing, it is possible to prevent hazardous substances from being discharged to the outside.

Description

熱処理装置Heat treatment equipment
　本発明は、半導体ウェハー等の薄板状精密電子基板（以下、単に「基板」と称する）を光照射等によって加熱する熱処理装置に関する。 The present invention relates to a heat treatment apparatus for heating a thin precision electronic substrate (hereinafter simply referred to as a “substrate”) such as a semiconductor wafer by light irradiation or the like.
　半導体デバイスの製造プロセスにおいて、極めて短時間で半導体ウェハーを加熱するフラッシュランプアニール（ＦＬＡ）が注目されている。フラッシュランプアニールは、キセノンフラッシュランプ（以下、単に「フラッシュランプ」とするときにはキセノンフラッシュランプを意味する）を使用して半導体ウェハーの表面にフラッシュ光を照射することにより、半導体ウェハーの表面のみを極めて短時間（数ミリ秒以下）に昇温させる熱処理技術である。 フ ラ ッ シ ュ In a semiconductor device manufacturing process, flash lamp annealing (FLA), which heats a semiconductor wafer in a very short time, has attracted attention. Flash lamp annealing uses a xenon flash lamp (hereinafter, simply referred to as a xenon flash lamp when simply referred to as a "flash lamp") to irradiate the surface of the semiconductor wafer with flash light, thereby extremely exposing only the surface of the semiconductor wafer. This is a heat treatment technology that raises the temperature in a short time (several milliseconds or less).
　キセノンフラッシュランプの放射分光分布は紫外域から近赤外域であり、従来のハロゲンランプよりも波長が短く、シリコンの半導体ウェハーの基礎吸収帯とほぼ一致している。よって、キセノンフラッシュランプから半導体ウェハーにフラッシュ光を照射したときには、透過光が少なく半導体ウェハーを急速に昇温することが可能である。また、数ミリ秒以下の極めて短時間のフラッシュ光照射であれば、半導体ウェハーの表面近傍のみを選択的に昇温できることも判明している。 放射 The xenon flash lamp has an emission spectral distribution from the ultraviolet to the near infrared, which has a shorter wavelength than that of a conventional halogen lamp, and substantially matches the basic absorption band of a silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the transmitted light is small and the temperature of the semiconductor wafer can be rapidly raised. In addition, it has been found that when the flash light is irradiated for a very short time of several milliseconds or less, only the vicinity of the surface of the semiconductor wafer can be selectively heated.
　このようなフラッシュランプアニールは、極短時間の加熱が必要とされる処理、例えば典型的には半導体ウェハーに注入された不純物の活性化に利用される。イオン注入法によって不純物が注入された半導体ウェハーの表面にフラッシュランプからフラッシュ光を照射すれば、当該半導体ウェハーの表面を極短時間だけ活性化温度にまで昇温することができ、不純物を深く拡散させることなく、不純物活性化のみを実行することができるのである。 (4) Such flash lamp annealing is used for a process requiring heating for an extremely short time, for example, activation of impurities typically implanted into a semiconductor wafer. By irradiating the surface of the semiconductor wafer into which impurities are implanted by the ion implantation method with flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature for a very short time, and the impurities can be diffused deeply. Only the impurity activation can be performed without causing the impurity activation.
　一方、半導体デバイスは典型的にはシリコンを用いて形成されるのであるが、微細化の限界を迎えつつある近年においては、シリコンに代わる材料にて半導体デバイスを形成する試みも盛んである。ゲルマニウムやガリウムヒ素（ＧａＡｓ）等の半導体は、シリコンよりも移動度が高く、これらの材料を用いてトランジスタを形成すればシリコンよりも高い性能を有した半導体デバイスの製作が可能である。例えば、特許文献１には、ガリウムヒ素の半導体薄膜に錫、ゲルマニウム、鉛等を含有させたものにフラッシュランプアニールを行うことにより、高キャリア移動度および高品質の半導体薄膜を得ることが開示されている。 On the other hand, semiconductor devices are typically formed using silicon, but in recent years, which has reached the limit of miniaturization, attempts to form semiconductor devices using materials instead of silicon have been active. Semiconductors such as germanium and gallium arsenide (GaAs) have higher mobility than silicon. When a transistor is formed using these materials, a semiconductor device having higher performance than silicon can be manufactured. For example, Patent Document 1 discloses that a semiconductor thin film of gallium arsenide containing tin, germanium, lead, or the like is subjected to flash lamp annealing to obtain a semiconductor thin film with high carrier mobility and high quality. ing.
特開２００２－２５２１７４号公報JP-A-2002-252174
　しかしながら、ガリウムヒ素の半導体を４００℃以上に加熱するとヒ素（Ａｓ）が外方拡散によって半導体薄膜から放出されることが判明している。フラッシュランプアニールにおいても、短時間ではあるものの半導体薄膜が４００℃以上の温度域に到達するため、外方拡散によるヒ素の放出が懸念される。ヒ素は、微量でも有害であることが知られている。 However, it has been found that when a gallium arsenide semiconductor is heated to 400 ° C. or higher, arsenic (As) is released from the semiconductor thin film by outward diffusion. Also in flash lamp annealing, the semiconductor thin film reaches a temperature range of 400 ° C. or higher for a short period of time, and there is a concern that arsenic may be released due to outward diffusion. Arsenic is known to be harmful even in trace amounts.
　このため、加熱時に放出されたヒ素をフラッシュランプアニール装置から外部に排出しないようにすることが求められる。一般的には、ヒ素等の有害物質を大気中に放散させないための対策として、工場排気にスクラバや除外装置が接続されている。しかし、このようなスクラバや除外装置をフラッシュランプアニール装置に組み込むことは、コストパフォーマンスおよびフットプリントの観点から現実的ではない。 Therefore, it is necessary to prevent arsenic released during heating from being discharged from the flash lamp annealing apparatus to the outside. Generally, a scrubber and an exclusion device are connected to factory exhaust as a measure to prevent harmful substances such as arsenic from being released into the atmosphere. However, incorporating such a scrubber or exclusion device into a flash lamp annealing device is not realistic from the viewpoint of cost performance and footprint.
　本発明は、上記課題に鑑みてなされたものであり、簡易な構成にて有害物質の外部への排出を防止することができる熱処理装置を提供することを目的とする。 The present invention has been made in view of the above problems, and has as its object to provide a heat treatment apparatus capable of preventing harmful substances from being discharged to the outside with a simple configuration.
　上記課題を解決するため、この発明の第１の態様は、基板を加熱する熱処理装置において、基板を収容するチャンバーと、前記チャンバー内に収容された前記基板を加熱する加熱源と、前記チャンバー内の雰囲気を排出する排気経路と、前記排気経路に設けられ、前記雰囲気中に含まれる物質を捕獲するトラップ部と、を備え、前記トラップ部は、筐体の内部に当該筐体を通過する気流を冷却する冷却部を設ける。 In order to solve the above problems, a first aspect of the present invention is directed to a heat treatment apparatus for heating a substrate, wherein a chamber for housing the substrate, a heating source for heating the substrate housed in the chamber, An exhaust path for exhausting the atmosphere, and a trap section provided in the exhaust path and capturing a substance contained in the atmosphere. And a cooling unit for cooling the cooling unit.
　また、第２の態様は、第１の態様に係る熱処理装置において、前記トラップ部は、前記冷却部によって冷却された気流が衝突するトラップ板を前記筐体の内部にさらに備える。 According to a second aspect, in the heat treatment apparatus according to the first aspect, the trap unit further includes a trap plate with which the airflow cooled by the cooling unit collides, inside the housing.
　また、第３の態様は、第２の態様に係る熱処理装置において、前記トラップ部は、前記冷却部が前記気流を冷却することによって析出した前記物質を付着させる捕集基板を収容する収容部を前記筐体の内部にさらに備える。 According to a third aspect, in the heat treatment apparatus according to the second aspect, the trap unit includes a storage unit that stores a collection substrate to which the substance deposited by cooling the airflow is attached. It is further provided inside the housing.
　また、第４の態様は、第１から第３のいずれかの態様に係る熱処理装置において、前記加熱源は、基板に光を照射して加熱するランプを備える。 According to a fourth aspect, in the heat treatment apparatus according to any one of the first to third aspects, the heating source includes a lamp for irradiating the substrate with light to heat the substrate.
　また、第５の態様は、第１から第４のいずれかの態様に係る熱処理装置において、前記物質はヒ素であることを特徴とする。 In a fifth aspect, in the heat treatment apparatus according to any one of the first to fourth aspects, the substance is arsenic.
　第１から第５の態様に係る熱処理装置によれば、排気経路に設けられたトラップ部は、筐体の内部に当該筐体を通過する気流を冷却する冷却部を設けるため、雰囲気中に含まれる物質を固体として析出させて捕獲することができ、簡易な構成にて有害物質の外部への排出を防止することができる。 According to the heat treatment apparatuses according to the first to fifth aspects, the trap section provided in the exhaust path is included in the atmosphere because the cooling section that cools the airflow passing through the casing is provided inside the casing. The harmful substance can be prevented from being discharged outside by a simple configuration.
　特に、第２の態様に係る熱処理装置によれば、トラップ部は、冷却部によって冷却された気流が衝突するトラップ板を備えるため、有害物質をより確実に捕獲することができる。 Particularly, according to the heat treatment apparatus of the second aspect, since the trap unit includes the trap plate against which the airflow cooled by the cooling unit collides, it is possible to capture harmful substances more reliably.
　特に、第３の態様に係る熱処理装置によれば、トラップ部は、冷却部が気流を冷却することによって析出した物質を付着させる捕集基板を収容する収容部を備えるため、捕集基板を分析することによって有害物質の捕獲を確認することができる。 In particular, according to the heat treatment apparatus according to the third aspect, since the trap section includes the storage section that stores the collection substrate to which the substance deposited by cooling the airflow is attached, the trap section is analyzed. By doing so, the capture of harmful substances can be confirmed.
本発明に係る熱処理装置の構成を示す縦断面図である。It is a longitudinal section showing the composition of the heat treatment equipment concerning the present invention. 保持部の全体外観を示す斜視図である。It is a perspective view showing the whole appearance of a maintenance part. サセプタの平面図である。It is a top view of a susceptor. サセプタの断面図である。It is sectional drawing of a susceptor. 移載機構の平面図である。It is a top view of a transfer mechanism. 移載機構の側面図である。It is a side view of a transfer mechanism. 複数のハロゲンランプの配置を示す平面図である。It is a top view showing arrangement of a plurality of halogen lamps. トラップボックスの構成を示す斜視図である。It is a perspective view which shows the structure of a trap box. トラップボックスの正面図である。It is a front view of a trap box. トラップボックスの平面図である。It is a top view of a trap box.
　以下、図面を参照しつつ本発明の実施の形態について詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
　図１は、本発明に係る熱処理装置１の構成を示す縦断面図である。図１の熱処理装置１は、基板として円板形状の半導体ウェハーＷに対してフラッシュ光照射を行うことによってその半導体ウェハーＷを加熱するフラッシュランプアニール装置である。処理対象となる半導体ウェハーＷのサイズは特に限定されるものではないが、例えばφ３００ｍｍやφ４５０ｍｍである（本実施形態ではφ３００ｍｍ）。熱処理装置１に搬入される前の半導体ウェハーＷには、ガリウムヒ素の半導体薄膜が形成されており、熱処理装置１による加熱処理によってガリウムヒ素に注入された不純物の活性化が実行される。なお、図１および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。 FIG. 1 is a longitudinal sectional view showing the configuration of the heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 of FIG. 1 is a flash lamp annealing apparatus that heats a semiconductor wafer W having a disk shape as a substrate by irradiating the semiconductor wafer W with flash light. The size of the semiconductor wafer W to be processed is not particularly limited, but is, for example, φ300 mm or φ450 mm (φ300 mm in the present embodiment). A semiconductor thin film of gallium arsenide is formed on the semiconductor wafer W before being loaded into the heat treatment apparatus 1, and the heat treatment performed by the heat treatment apparatus 1 activates the impurities implanted into the gallium arsenide. Note that, in FIG. 1 and each of the following drawings, the dimensions and the numbers of the respective parts are exaggerated or simplified as necessary for easy understanding.
　熱処理装置１は、半導体ウェハーＷを収容するチャンバー６と、複数のフラッシュランプＦＬを内蔵するフラッシュ加熱部５と、複数のハロゲンランプＨＬを内蔵するハロゲン加熱部４と、を備える。チャンバー６の上側にフラッシュ加熱部５が設けられるとともに、下側にハロゲン加熱部４が設けられている。また、熱処理装置１は、チャンバー６の内部に、半導体ウェハーＷを水平姿勢に保持する保持部７と、保持部７と装置外部との間で半導体ウェハーＷの受け渡しを行う移載機構１０と、を備える。また、熱処理装置１は、チャンバー６から排気される気体から有害物質であるヒ素を除去するトラップボックス９０を備える。さらに、熱処理装置１は、ハロゲン加熱部４、フラッシュ加熱部５およびチャンバー６に設けられた各動作機構を制御して半導体ウェハーＷの熱処理を実行させる制御部３を備える。 The heat treatment apparatus 1 includes a chamber 6 for accommodating the semiconductor wafer W, a flash heating unit 5 containing a plurality of flash lamps FL, and a halogen heating unit 4 containing a plurality of halogen lamps HL. A flash heating unit 5 is provided above the chamber 6, and a halogen heating unit 4 is provided below the chamber 6. The heat treatment apparatus 1 further includes a holding unit 7 that holds the semiconductor wafer W in a horizontal position inside the chamber 6, a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the outside of the apparatus, Is provided. Further, the heat treatment apparatus 1 includes a trap box 90 for removing harmful arsenic from the gas exhausted from the chamber 6. Further, the heat treatment apparatus 1 includes a control unit 3 that controls each operation mechanism provided in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to execute the heat treatment of the semiconductor wafer W.
　チャンバー６は、筒状のチャンバー側部６１の上下に石英製のチャンバー窓を装着して構成されている。チャンバー側部６１は上下が開口された概略筒形状を有しており、上側開口には上側チャンバー窓６３が装着されて閉塞され、下側開口には下側チャンバー窓６４が装着されて閉塞されている。チャンバー６の天井部を構成する上側チャンバー窓６３は、石英により形成された円板形状部材であり、フラッシュ加熱部５から出射されたフラッシュ光をチャンバー６内に透過する石英窓として機能する。また、チャンバー６の床部を構成する下側チャンバー窓６４も、石英により形成された円板形状部材であり、ハロゲン加熱部４からの光をチャンバー６内に透過する石英窓として機能する。 The chamber 6 is configured by mounting a quartz chamber window above and below a cylindrical chamber side 61. The chamber side portion 61 has a substantially cylindrical shape with an open top and bottom. The upper opening is provided with an upper chamber window 63 mounted and closed, and the lower opening is provided with a lower chamber window 64 mounted and closed. ing. The upper chamber window 63 constituting the ceiling of the chamber 6 is a disk-shaped member formed of quartz, and functions as a quartz window for transmitting flash light emitted from the flash heating unit 5 into the chamber 6. Further, the lower chamber window 64 constituting the floor of the chamber 6 is also a disc-shaped member formed of quartz, and functions as a quartz window for transmitting light from the halogen heating unit 4 into the chamber 6.
　また、チャンバー側部６１の内側の壁面の上部には反射リング６８が装着され、下部には反射リング６９が装着されている。反射リング６８，６９は、ともに円環状に形成されている。上側の反射リング６８は、チャンバー側部６１の上側から嵌め込むことによって装着される。一方、下側の反射リング６９は、チャンバー側部６１の下側から嵌め込んで図示省略のビスで留めることによって装着される。すなわち、反射リング６８，６９は、ともに着脱自在にチャンバー側部６１に装着されるものである。チャンバー６の内側空間、すなわち上側チャンバー窓６３、下側チャンバー窓６４、チャンバー側部６１および反射リング６８，６９によって囲まれる空間が熱処理空間６５として規定される。 反射 Reflection ring 68 is attached to the upper part of the inner wall surface of chamber side part 61, and reflection ring 69 is attached to the lower part. The reflection rings 68 and 69 are both formed in an annular shape. The upper reflecting ring 68 is mounted by being fitted from above the chamber side 61. On the other hand, the lower reflective ring 69 is mounted by being fitted from below the chamber side 61 and fastened with screws (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side 61. The space inside the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61 and the reflection rings 68 and 69 is defined as the heat treatment space 65.
　チャンバー側部６１に反射リング６８，６９が装着されることによって、チャンバー６の内壁面に凹部６２が形成される。すなわち、チャンバー側部６１の内壁面のうち反射リング６８，６９が装着されていない中央部分と、反射リング６８の下端面と、反射リング６９の上端面とで囲まれた凹部６２が形成される。凹部６２は、チャンバー６の内壁面に水平方向に沿って円環状に形成され、半導体ウェハーＷを保持する保持部７を囲繞する。チャンバー側部６１および反射リング６８，６９は、強度と耐熱性に優れた金属材料（例えば、ステンレススチール）にて形成されている。 凹 部 By attaching the reflection rings 68 and 69 to the chamber side 61, a concave portion 62 is formed on the inner wall surface of the chamber 6. That is, a concave portion 62 is formed which is surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, a lower end surface of the reflection ring 68, and an upper end surface of the reflection ring 69. . The concave portion 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6 and surrounds the holding portion 7 that holds the semiconductor wafer W. The chamber side 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance.
　また、チャンバー側部６１には、チャンバー６に対して半導体ウェハーＷの搬入および搬出を行うための搬送開口部（炉口）６６が形設されている。搬送開口部６６は、ゲートバルブ１８５によって開閉可能とされている。搬送開口部６６は凹部６２の外周面に連通接続されている。このため、ゲートバルブ１８５が搬送開口部６６を開放しているときには、搬送開口部６６から凹部６２を通過して熱処理空間６５への半導体ウェハーＷの搬入および熱処理空間６５からの半導体ウェハーＷの搬出を行うことができる。また、ゲートバルブ１８５が搬送開口部６６を閉鎖するとチャンバー６内の熱処理空間６５が密閉空間とされる。 {Circle around (6)} A transfer opening (furnace opening) 66 for carrying the semiconductor wafer W in and out of the chamber 6 is formed in the chamber side 61. The transport opening 66 can be opened and closed by a gate valve 185. The transport opening 66 is connected to the outer peripheral surface of the concave portion 62 in communication. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W is transferred from the transfer opening 66 through the concave portion 62 to the heat treatment space 65 and unloaded from the heat treatment space 65. It can be performed. When the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the chamber 6 becomes a closed space.
　さらに、チャンバー側部６１には、貫通孔６１ａが穿設されている。チャンバー側部６１の外壁面の貫通孔６１ａが設けられている部位には放射温度計２０が取り付けられている。貫通孔６１ａは、後述するサセプタ７４に保持された半導体ウェハーＷの下面から放射された赤外光を放射温度計２０に導くための円筒状の孔である。貫通孔６１ａは、その貫通方向の軸がサセプタ７４に保持された半導体ウェハーＷの主面と交わるように、水平方向に対して傾斜して設けられている。貫通孔６１ａの熱処理空間６５に臨む側の端部には、放射温度計２０が測定可能な波長領域の赤外光を透過させるフッ化バリウム材料からなる透明窓２１が装着されている。 Furthermore, a through hole 61a is formed in the chamber side 61. The radiation thermometer 20 is attached to a portion of the outer wall surface of the chamber side 61 where the through hole 61a is provided. The through hole 61a is a cylindrical hole for guiding infrared light emitted from the lower surface of the semiconductor wafer W held by a susceptor 74 described later to the radiation thermometer 20. The through hole 61a is provided to be inclined with respect to the horizontal direction so that the axis of the through hole 61a intersects with the main surface of the semiconductor wafer W held by the susceptor 74. At the end of the through hole 61a on the side facing the heat treatment space 65, a transparent window 21 made of a barium fluoride material that transmits infrared light in a wavelength range that can be measured by the radiation thermometer 20 is mounted.
　また、チャンバー６の内壁上部には熱処理空間６５に処理ガスを供給するガス供給孔８１が形設されている。ガス供給孔８１は、凹部６２よりも上側位置に形設されており、反射リング６８に設けられていても良い。ガス供給孔８１はチャンバー６の側壁内部に円環状に形成された緩衝空間８２を介してガス供給管８３に連通接続されている。ガス供給管８３は処理ガス供給源８５に接続されている。また、ガス供給管８３の経路途中には給気バルブ８４が介挿されている。給気バルブ８４が開放されると、処理ガス供給源８５から緩衝空間８２に処理ガスが送給される。緩衝空間８２に流入した処理ガスは、ガス供給孔８１よりも流体抵抗の小さい緩衝空間８２内を拡がるように流れてガス供給孔８１から熱処理空間６５内へと供給される。処理ガスとしては、例えば窒素（Ｎ２）等の不活性ガス、または、水素（Ｈ２）、アンモニア（ＮＨ３）等の反応性ガス、或いはそれらを混合した混合ガスを用いることができる（本実施形態では窒素ガス）。 Further, a gas supply hole 81 for supplying a processing gas to the heat treatment space 65 is formed in an upper portion of an inner wall of the chamber 6. The gas supply hole 81 is formed above the concave portion 62 and may be provided on the reflection ring 68. The gas supply hole 81 is connected to a gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. An air supply valve 84 is interposed in the middle of the path of the gas supply pipe 83. When the air supply valve 84 is opened, the processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas flowing into the buffer space 82 flows so as to expand in the buffer space 82 having a smaller fluid resistance than the gas supply holes 81, and is supplied from the gas supply holes 81 into the heat treatment space 65. As the processing gas, for example, an inert gas such as nitrogen (N 2 ), a reactive gas such as hydrogen (H 2 ), ammonia (NH 3 ), or a mixed gas obtained by mixing them can be used. In the embodiment, nitrogen gas).
　一方、チャンバー６の内壁下部には熱処理空間６５内の気体を排気するガス排気孔８６が形設されている。ガス排気孔８６は、凹部６２よりも下側位置に形設されており、反射リング６９に設けられていても良い。ガス排気孔８６はチャンバー６の側壁内部に円環状に形成された緩衝空間８７を介してガス排気管８８に連通接続されている。ガス排気管８８は排気部１９０に接続されている。また、ガス排気管８８の経路途中には排気バルブ８９およびトラップボックス９０が介挿されている。排気バルブ８９が開放されると、熱処理空間６５の気体がガス排気孔８６から緩衝空間８７を経てガス排気管８８へと排出される。なお、ガス供給孔８１およびガス排気孔８６は、チャンバー６の周方向に沿って複数設けられていても良いし、スリット状のものであっても良い。 On the other hand, a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the chamber 6. The gas exhaust hole 86 is formed at a position lower than the concave portion 62, and may be provided on the reflection ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 via a buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust part 190. An exhaust valve 89 and a trap box 90 are interposed in the middle of the path of the gas exhaust pipe 88. When the exhaust valve 89 is opened, the gas in the heat treatment space 65 is exhausted from the gas exhaust hole 86 to the gas exhaust pipe 88 via the buffer space 87. Note that a plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the chamber 6 or may be slit-shaped.
　排気部１９０としては、真空ポンプや熱処理装置１が設置される工場の排気ユーティリティを用いることができる。排気部１９０として真空ポンプを採用し、給気バルブ８４を閉止してガス供給孔８１から何らのガス供給を行うことなく密閉空間である熱処理空間６５の雰囲気を排気すると、チャンバー６内を真空雰囲気にまで減圧することができる。また、排気部１９０として真空ポンプを用いていない場合であっても、ガス供給孔８１からガス供給を行うことなく排気を行うことにより、チャンバー６内を大気圧未満の気圧に減圧することができる。 (4) As the exhaust unit 190, an exhaust utility of a factory where the vacuum pump and the heat treatment apparatus 1 are installed can be used. When a vacuum pump is adopted as the exhaust unit 190, the air supply valve 84 is closed, and the atmosphere in the heat treatment space 65, which is a closed space, is exhausted without supplying any gas from the gas supply hole 81, the inside of the chamber 6 becomes a vacuum atmosphere The pressure can be reduced to Further, even when a vacuum pump is not used as the exhaust unit 190, the inside of the chamber 6 can be depressurized to a pressure lower than the atmospheric pressure by performing the exhaust without supplying the gas from the gas supply hole 81. .
　図８は、トラップボックス９０の構成を示す斜視図である。また、図９はトラップボックス９０の正面図であり、図１０はトラップボックス９０の平面図である。図８～図１０の各図においては、それらの方向関係を明確にするためＺ軸方向を鉛直方向とし、ＸＹ平面を水平面とするＸＹＺ直交座標系を付している。 FIG. 8 is a perspective view showing the configuration of the trap box 90. FIG. 9 is a front view of the trap box 90, and FIG. 10 is a plan view of the trap box 90. In each of FIGS. 8 to 10, an XYZ orthogonal coordinate system is used in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane in order to clarify the directional relationship.
　トラップボックス９０は、ガス排気管８８の経路途中に設けられている。トラップボックス９０の設置位置は特に限定されるものではないが、ガス排気管８８の経路途中において可能な限りチャンバー６のガス排気孔８６の近くに設けるのが好ましい。 The trap box 90 is provided in the path of the gas exhaust pipe 88. The installation position of the trap box 90 is not particularly limited, but it is preferable that the trap box 90 be provided as close to the gas exhaust hole 86 of the chamber 6 as possible in the course of the gas exhaust pipe 88.
　トラップボックス９０は、筐体９１の内部に、主たる構成要素としてラジエーター９２、トラッププレート９５およびウェハー収容部９６を備える。筐体９１は、中空の直方体形状の箱である。筐体９１には、内部に気体を取り入れる給気口９７および内部の気体を排出する排気口９８が設けられている。給気口９７および排気口９８は、チャンバー６から排出された気体を導くガス排気管８８に接続される。 The trap box 90 includes a radiator 92, a trap plate 95, and a wafer accommodating portion 96 as main components inside a casing 91. The housing 91 is a hollow rectangular parallelepiped box. The housing 91 is provided with an air supply port 97 for taking in gas inside and an exhaust port 98 for discharging gas inside. The supply port 97 and the exhaust port 98 are connected to a gas exhaust pipe 88 that guides the gas exhausted from the chamber 6.
　ラジエーター９２は、筐体９１の内部空間を隔てるように、筐体９１の断面（ＹＺ断面）の全面に設けられている。ラジエーター９２は、複数の冷却管９３、図示を省略するタンクおよび循環ポンプを備える。複数の冷却管９３は、所定の間隔を隔てて平行に並べて配置されている。複数の冷却管９３のそれぞれは、熱伝導性に優れた材質、例えばアルミニウムによって形成されている。タンクに貯留されている所定温度に温調された冷却液（例えば、冷却水）が循環ポンプによって複数の冷却管９３内を流れて循環されるように構成されている。複数の冷却管９３の間を通る気体は冷却液が流れる冷却管９３によって冷却されることとなる。ラジエーター９２は、筐体９１の断面全面に設けられているため、筐体９１を通過する気流全体を冷却する。なお、ラジエーター９２の冷却効率を高めるために、冷却管９３は表面積の大きな蛇行形状とされていていても良いし、複数の冷却管９３が格子状に配置されていても良い。 The radiator 92 is provided on the entire cross section (YZ cross section) of the housing 91 so as to separate the internal space of the housing 91. The radiator 92 includes a plurality of cooling pipes 93, a tank (not shown), and a circulation pump. The plurality of cooling pipes 93 are arranged in parallel at predetermined intervals. Each of the plurality of cooling pipes 93 is formed of a material having excellent heat conductivity, for example, aluminum. The cooling liquid (for example, cooling water) whose temperature is controlled to a predetermined temperature stored in the tank is configured to flow and circulate through the plurality of cooling pipes 93 by a circulation pump. The gas passing between the plurality of cooling pipes 93 is cooled by the cooling pipes 93 through which the cooling liquid flows. Since the radiator 92 is provided on the entire cross section of the casing 91, it cools the entire airflow passing through the casing 91. In order to increase the cooling efficiency of the radiator 92, the cooling pipe 93 may have a meandering shape with a large surface area, or a plurality of cooling pipes 93 may be arranged in a grid.
　トラッププレート９５は、筐体９１の内部にてラジエーター９２と平行に設けられた板状部材である。図８および図９に示すように、トラッププレート９５は、筐体９１の断面（ＹＺ断面）の上部を遮蔽するように設けられている。従って、トラッププレート９５が設置された筐体９１の断面において、トラッププレート９５の下方は開放されている。トラッププレート９５の材質は特に限定されるものではないが、例えば塩化ビニル樹脂を用いることができる。 The trap plate 95 is a plate-like member provided in the housing 91 in parallel with the radiator 92. As shown in FIGS. 8 and 9, the trap plate 95 is provided so as to shield an upper part of a cross section (YZ cross section) of the housing 91. Therefore, the lower part of the trap plate 95 is open in the cross section of the housing 91 in which the trap plate 95 is installed. Although the material of the trap plate 95 is not particularly limited, for example, a vinyl chloride resin can be used.
　ラジエーター９２およびトラッププレート９５は、筐体９１に対して着脱可能に設けられている。従って、必要に応じてラジエーター９２およびトラッププレート９５を交換することが可能である。 The radiator 92 and the trap plate 95 are provided detachably with respect to the housing 91. Therefore, the radiator 92 and the trap plate 95 can be exchanged as needed.
　ウェハー収容部９６は、筐体９１の内部にてトラッププレート９５の下方に設置されている。ウェハー収容部９６は、トラッププレート９５の下方にて計測用ウェハーＭＷを水平姿勢に載置する。つまり、ウェハー収容部９６は、トラッププレート９５と垂直に計測用ウェハーＭＷを載置する。計測用ウェハーＭＷは、一般的な半導体ウェハーＷと同じ形状およびサイズを有するシリコン基板である。但し、計測用ウェハーＭＷには、パターン形成や成膜処理はなされていない。 The wafer accommodating portion 96 is installed below the trap plate 95 inside the housing 91. The wafer accommodating section 96 places the measurement wafer MW in a horizontal position below the trap plate 95. That is, the wafer accommodating portion 96 places the measurement wafer MW perpendicular to the trap plate 95. The measurement wafer MW is a silicon substrate having the same shape and size as a general semiconductor wafer W. However, no pattern formation or film formation processing has been performed on the measurement wafer MW.
　図２は、保持部７の全体外観を示す斜視図である。保持部７は、基台リング７１、連結部７２およびサセプタ７４を備えて構成される。基台リング７１、連結部７２およびサセプタ７４はいずれも石英にて形成されている。すなわち、保持部７の全体が石英にて形成されている。 FIG. 2 is a perspective view showing the overall appearance of the holding unit 7. The holding unit 7 includes a base ring 71, a connecting unit 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all formed of quartz. That is, the entire holding section 7 is formed of quartz.
　基台リング７１は円環形状から一部が欠落した円弧形状の石英部材である。この欠落部分は、後述する移載機構１０の移載アーム１１と基台リング７１との干渉を防ぐために設けられている。基台リング７１は凹部６２の底面に載置されることによって、チャンバー６の壁面に支持されることとなる（図１参照）。基台リング７１の上面に、その円環形状の周方向に沿って複数の連結部７２（本実施形態では４個）が立設される。連結部７２も石英の部材であり、溶接によって基台リング７１に固着される。 The base ring 71 is an arc-shaped quartz member in which a part is omitted from the ring shape. The missing portion is provided to prevent interference between a transfer arm 11 of the transfer mechanism 10 described below and the base ring 71. The base ring 71 is supported on the wall surface of the chamber 6 by being placed on the bottom surface of the concave portion 62 (see FIG. 1). A plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the ring shape. The connecting portion 72 is also a quartz member, and is fixed to the base ring 71 by welding.
　サセプタ７４は基台リング７１に設けられた４個の連結部７２によって支持される。図３は、サセプタ７４の平面図である。また、図４は、サセプタ７４の断面図である。サセプタ７４は、保持プレート７５、ガイドリング７６および複数の基板支持ピン７７を備える。保持プレート７５は、石英にて形成された略円形の平板状部材である。保持プレート７５の直径は半導体ウェハーＷの直径よりも大きい。すなわち、保持プレート７５は、半導体ウェハーＷよりも大きな平面サイズを有する。 The susceptor 74 is supported by four connecting portions 72 provided on the base ring 71. FIG. 3 is a plan view of the susceptor 74. FIG. 4 is a sectional view of the susceptor 74. The susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular plate-shaped member formed of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger planar size than the semiconductor wafer W.
　保持プレート７５の上面周縁部にガイドリング７６が設置されている。ガイドリング７６は、半導体ウェハーＷの直径よりも大きな内径を有する円環形状の部材である。例えば、半導体ウェハーＷの直径がφ３００ｍｍの場合、ガイドリング７６の内径はφ３２０ｍｍである。ガイドリング７６の内周は、保持プレート７５から上方に向けて広くなるようなテーパ面とされている。ガイドリング７６は、保持プレート７５と同様の石英にて形成される。ガイドリング７６は、保持プレート７５の上面に溶着するようにしても良いし、別途加工したピンなどによって保持プレート７５に固定するようにしても良い。或いは、保持プレート７５とガイドリング７６とを一体の部材として加工するようにしても良い。 ガ イ ド A guide ring 76 is provided on the periphery of the upper surface of the holding plate 75. The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is φ300 mm, the inner diameter of the guide ring 76 is φ320 mm. The inner circumference of the guide ring 76 has a tapered surface that widens upward from the holding plate 75. The guide ring 76 is formed of the same quartz as the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.
　保持プレート７５の上面のうちガイドリング７６よりも内側の領域が半導体ウェハーＷを保持する平面状の保持面７５ａとされる。保持プレート７５の保持面７５ａには、複数の基板支持ピン７７が立設されている。本実施形態においては、保持面７５ａの外周円（ガイドリング７６の内周円）と同心円の周上に沿って３０°毎に計１２個の基板支持ピン７７が立設されている。１２個の基板支持ピン７７を配置した円の径（対向する基板支持ピン７７間の距離）は半導体ウェハーＷの径よりも小さく、半導体ウェハーＷの径がφ３００ｍｍであればφ２７０ｍｍ～φ２８０ｍｍ（本実施形態ではφ２７０ｍｍ）である。それぞれの基板支持ピン７７は石英にて形成されている。複数の基板支持ピン７７は、保持プレート７５の上面に溶接によって設けるようにしても良いし、保持プレート７５と一体に加工するようにしても良い。 の う ち A region inside the guide ring 76 on the upper surface of the holding plate 75 is a flat holding surface 75a for holding the semiconductor wafer W. A plurality of substrate support pins 77 are provided upright on the holding surface 75 a of the holding plate 75. In the present embodiment, a total of 12 substrate support pins 77 are erected at every 30 ° along the outer circumference of the holding surface 75a (the inner circumference of the guide ring 76). The diameter of the circle in which the twelve substrate support pins 77 are arranged (the distance between the opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W. If the diameter of the semiconductor wafer W is φ300 mm, φ270 mm to φ280 mm (this embodiment) (Φ270 mm in the form). Each substrate support pin 77 is formed of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be processed integrally with the holding plate 75.
　図２に戻り、基台リング７１に立設された４個の連結部７２とサセプタ７４の保持プレート７５の周縁部とが溶接によって固着される。すなわち、サセプタ７４と基台リング７１とは連結部７２によって固定的に連結されている。このような保持部７の基台リング７１がチャンバー６の壁面に支持されることによって、保持部７がチャンバー６に装着される。保持部７がチャンバー６に装着された状態においては、サセプタ７４の保持プレート７５は水平姿勢（法線が鉛直方向と一致する姿勢）となる。すなわち、保持プレート７５の保持面７５ａは水平面となる。 Returning to FIG. 2, the four connecting portions 72 erected on the base ring 71 and the peripheral edge of the holding plate 75 of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portion 72. By supporting the base ring 71 of the holder 7 on the wall surface of the chamber 6, the holder 7 is mounted on the chamber 6. When the holding unit 7 is mounted on the chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal posture (a posture in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 is a horizontal plane.
　チャンバー６に搬入された半導体ウェハーＷは、チャンバー６に装着された保持部７のサセプタ７４の上に水平姿勢にて載置されて保持される。このとき、半導体ウェハーＷは保持プレート７５上に立設された１２個の基板支持ピン７７によって支持されてサセプタ７４に保持される。より厳密には、１２個の基板支持ピン７７の上端部が半導体ウェハーＷの下面に接触して当該半導体ウェハーＷを支持する。１２個の基板支持ピン７７の高さ（基板支持ピン７７の上端から保持プレート７５の保持面７５ａまでの距離）は均一であるため、１２個の基板支持ピン７７によって半導体ウェハーＷを水平姿勢に支持することができる。 The semiconductor wafer W carried into the chamber 6 is placed and held in a horizontal posture on the susceptor 74 of the holding unit 7 mounted on the chamber 6. At this time, the semiconductor wafer W is supported by twelve substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 contact the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the twelve substrate support pins 77 (the distance from the upper end of the substrate support pins 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W is placed in a horizontal posture by the twelve substrate support pins 77. Can be supported.
　また、半導体ウェハーＷは複数の基板支持ピン７７によって保持プレート７５の保持面７５ａから所定の間隔を隔てて支持されることとなる。基板支持ピン７７の高さよりもガイドリング７６の厚さの方が大きい。従って、複数の基板支持ピン７７によって支持された半導体ウェハーＷの水平方向の位置ずれはガイドリング７６によって防止される。 {Circle around (1)} The semiconductor wafer W is supported by the plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75. The thickness of the guide ring 76 is larger than the height of the substrate support pins 77. Therefore, the horizontal displacement of the semiconductor wafer W supported by the plurality of substrate support pins 77 is prevented by the guide ring 76.
　また、図２および図３に示すように、サセプタ７４の保持プレート７５には、上下に貫通して開口部７８が形成されている。開口部７８は、放射温度計２０が半導体ウェハーＷの下面から放射される放射光（赤外光）を受光するために設けられている。すなわち、放射温度計２０が開口部７８およびチャンバー側部６１の貫通孔６１ａに装着された透明窓２１を介して半導体ウェハーＷの下面から放射された光を受光して当該半導体ウェハーＷの温度を測定する。さらに、サセプタ７４の保持プレート７５には、後述する移載機構１０のリフトピン１２が半導体ウェハーＷの受け渡しのために貫通する４個の貫通孔７９が穿設されている。 {Circle around (2)} As shown in FIGS. 2 and 3, the holding plate 75 of the susceptor 74 has an opening 78 penetrating vertically. The opening 78 is provided for the radiation thermometer 20 to receive radiation light (infrared light) radiated from the lower surface of the semiconductor wafer W. That is, the radiation thermometer 20 receives the light radiated from the lower surface of the semiconductor wafer W through the opening 78 and the transparent window 21 attached to the through hole 61a of the chamber side portion 61, and reduces the temperature of the semiconductor wafer W. Measure. Further, the holding plate 75 of the susceptor 74 is provided with four through holes 79 through which the lift pins 12 of the transfer mechanism 10 to be described later pass for transferring the semiconductor wafer W.
　図５は、移載機構１０の平面図である。また、図６は、移載機構１０の側面図である。移載機構１０は、２本の移載アーム１１を備える。移載アーム１１は、概ね円環状の凹部６２に沿うような円弧形状とされている。それぞれの移載アーム１１には２本のリフトピン１２が立設されている。移載アーム１１およびリフトピン１２は石英にて形成されている。各移載アーム１１は水平移動機構１３によって回動可能とされている。水平移動機構１３は、一対の移載アーム１１を保持部７に対して半導体ウェハーＷの移載を行う移載動作位置（図５の実線位置）と保持部７に保持された半導体ウェハーＷと平面視で重ならない退避位置（図５の二点鎖線位置）との間で水平移動させる。水平移動機構１３としては、個別のモータによって各移載アーム１１をそれぞれ回動させるものであっても良いし、リンク機構を用いて１個のモータによって一対の移載アーム１１を連動させて回動させるものであっても良い。 FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 is formed in a circular arc shape along the generally annular concave portion 62. Each transfer arm 11 is provided with two lift pins 12 standing upright. The transfer arm 11 and the lift pins 12 are formed of quartz. Each transfer arm 11 is rotatable by a horizontal movement mechanism 13. The horizontal movement mechanism 13 moves the pair of transfer arms 11 to a transfer operation position (solid line position in FIG. 5) where the semiconductor wafer W is transferred to the holding unit 7 and the semiconductor wafer W held by the holding unit 7. The horizontal movement is performed between a retracted position (a position indicated by a two-dot chain line in FIG. 5) that does not overlap in a plan view. The horizontal movement mechanism 13 may be configured to rotate each transfer arm 11 by an individual motor, or may be rotated by linking a pair of transfer arms 11 by a single motor using a link mechanism. It may be moved.
　また、一対の移載アーム１１は、昇降機構１４によって水平移動機構１３とともに昇降移動される。昇降機構１４が一対の移載アーム１１を移載動作位置にて上昇させると、計４本のリフトピン１２がサセプタ７４に穿設された貫通孔７９（図２，３参照）を通過し、リフトピン１２の上端がサセプタ７４の上面から突き出る。一方、昇降機構１４が一対の移載アーム１１を移載動作位置にて下降させてリフトピン１２を貫通孔７９から抜き取り、水平移動機構１３が一対の移載アーム１１を開くように移動させると各移載アーム１１が退避位置に移動する。一対の移載アーム１１の退避位置は、保持部７の基台リング７１の直上である。基台リング７１は凹部６２の底面に載置されているため、移載アーム１１の退避位置は凹部６２の内側となる。なお、移載機構１０の駆動部（水平移動機構１３および昇降機構１４）が設けられている部位の近傍にも図示省略の排気機構が設けられており、移載機構１０の駆動部周辺の雰囲気がチャンバー６の外部に排出されるように構成されている。 (4) The pair of transfer arms 11 is moved up and down by the elevating mechanism 14 together with the horizontal moving mechanism 13. When the lifting mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift pins 12 pass through the through holes 79 (see FIGS. 2 and 3) formed in the susceptor 74, and The upper end of 12 protrudes from the upper surface of susceptor 74. On the other hand, when the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, pulls out the lift pins 12 from the through holes 79, and moves the horizontal movement mechanism 13 to open the pair of transfer arms 11, The transfer arm 11 moves to the retreat position. The retracted position of the pair of transfer arms 11 is immediately above the base ring 71 of the holding unit 7. Since the base ring 71 is placed on the bottom surface of the concave portion 62, the retreat position of the transfer arm 11 is inside the concave portion 62. An exhaust mechanism (not shown) is also provided near the portion where the driving unit (the horizontal moving mechanism 13 and the elevating mechanism 14) of the transfer mechanism 10 is provided. Is discharged to the outside of the chamber 6.
　図１に戻り、チャンバー６の上方に設けられたフラッシュ加熱部５は、筐体５１の内側に、複数本（本実施形態では３０本）のキセノンフラッシュランプＦＬからなる光源と、その光源の上方を覆うように設けられたリフレクタ５２と、を備えて構成される。また、フラッシュ加熱部５の筐体５１の底部にはランプ光放射窓５３が装着されている。フラッシュ加熱部５の床部を構成するランプ光放射窓５３は、石英により形成された板状の石英窓である。フラッシュ加熱部５がチャンバー６の上方に設置されることにより、ランプ光放射窓５３が上側チャンバー窓６３と相対向することとなる。フラッシュランプＦＬはチャンバー６の上方からランプ光放射窓５３および上側チャンバー窓６３を介して熱処理空間６５にフラッシュ光を照射する。 Returning to FIG. 1, the flash heating unit 5 provided above the chamber 6 includes a light source including a plurality of (30 in this embodiment) xenon flash lamps FL and a light source above the light source. And a reflector 52 provided so as to cover the reflector. A lamp light emission window 53 is mounted on the bottom of the housing 51 of the flash heating unit 5. The lamp light emission window 53 constituting the floor of the flash heating unit 5 is a plate-shaped quartz window made of quartz. When the flash heating unit 5 is installed above the chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamp FL irradiates the heat treatment space 65 with flash light from above the chamber 6 through the lamp light emission window 53 and the upper chamber window 63.
　複数のフラッシュランプＦＬは、それぞれが長尺の円筒形状を有する棒状ランプであり、それぞれの長手方向が保持部７に保持される半導体ウェハーＷの主面に沿って（つまり水平方向に沿って）互いに平行となるように平面状に配列されている。よって、フラッシュランプＦＬの配列によって形成される平面も水平面である。複数のフラッシュランプＦＬが配列される領域は半導体ウェハーＷの平面サイズよりも大きい。 The plurality of flash lamps FL are rod-shaped lamps each having a long cylindrical shape, and each of the plurality of flash lamps FL has a longitudinal direction along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane. The area where the plurality of flash lamps FL are arranged is larger than the plane size of the semiconductor wafer W.
　キセノンフラッシュランプＦＬは、その内部にキセノンガスが封入されその両端部にコンデンサーに接続された陽極および陰極が配設された棒状のガラス管（放電管）と、該ガラス管の外周面上に付設されたトリガー電極とを備える。キセノンガスは電気的には絶縁体であることから、コンデンサーに電荷が蓄積されていたとしても通常の状態ではガラス管内に電気は流れない。しかしながら、トリガー電極に高電圧を印加して絶縁を破壊した場合には、コンデンサーに蓄えられた電気がガラス管内に瞬時に流れ、そのときのキセノンの原子あるいは分子の励起によって光が放出される。このようなキセノンフラッシュランプＦＬにおいては、予めコンデンサーに蓄えられていた静電エネルギーが０．１ミリセカンドないし１００ミリセカンドという極めて短い光パルスに変換されることから、ハロゲンランプＨＬの如き連続点灯の光源に比べて極めて強い光を照射し得るという特徴を有する。すなわち、フラッシュランプＦＬは、１秒未満の極めて短い時間で瞬間的に発光するパルス発光ランプである。なお、フラッシュランプＦＬの発光時間は、フラッシュランプＦＬに電力供給を行うランプ電源のコイル定数によって調整することができる。 The xenon flash lamp FL has a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a condenser are disposed at both ends thereof, and is provided on the outer peripheral surface of the glass tube. And a trigger electrode. Since xenon gas is electrically an insulator, electricity does not flow in a glass tube in a normal state even if charges are stored in a capacitor. However, when a high voltage is applied to the trigger electrode to break the insulation, the electricity stored in the capacitor flows instantaneously into the glass tube, and light is emitted by the excitation of xenon atoms or molecules at that time. In such a xenon flash lamp FL, since the electrostatic energy stored in the condenser in advance is converted into an extremely short light pulse of 0.1 to 100 milliseconds, continuous lighting such as a halogen lamp HL is performed. It has a feature that it can emit extremely strong light compared to a light source. That is, the flash lamp FL is a pulsed lamp that emits light instantaneously in a very short time of less than one second. The light emission time of the flash lamp FL can be adjusted by the coil constant of a lamp power supply that supplies power to the flash lamp FL.
　また、リフレクタ５２は、複数のフラッシュランプＦＬの上方にそれら全体を覆うように設けられている。リフレクタ５２の基本的な機能は、複数のフラッシュランプＦＬから出射されたフラッシュ光を熱処理空間６５の側に反射するというものである。リフレクタ５２はアルミニウム合金板にて形成されており、その表面（フラッシュランプＦＬに臨む側の面）はブラスト処理により粗面化加工が施されている。 (4) The reflector 52 is provided above the plurality of flash lamps FL so as to cover the entirety thereof. The basic function of the reflector 52 is to reflect flash light emitted from the plurality of flash lamps FL to the heat treatment space 65 side. The reflector 52 is made of an aluminum alloy plate, and its surface (the surface facing the flash lamp FL) is roughened by blasting.
　チャンバー６の下方に設けられたハロゲン加熱部４は、筐体４１の内側に複数本（本実施形態では４０本）のハロゲンランプＨＬを内蔵している。ハロゲン加熱部４は、複数のハロゲンランプＨＬによってチャンバー６の下方から下側チャンバー窓６４を介して熱処理空間６５への光照射を行って半導体ウェハーＷを加熱する。 (4) The halogen heating unit 4 provided below the chamber 6 has a plurality of (in this embodiment, 40) halogen lamps HL inside the housing 41. The halogen heating unit 4 heats the semiconductor wafer W by irradiating the heat treatment space 65 from below the chamber 6 through the lower chamber window 64 with a plurality of halogen lamps HL.
　図７は、複数のハロゲンランプＨＬの配置を示す平面図である。４０本のハロゲンランプＨＬは上下２段に分けて配置されている。保持部７に近い上段に２０本のハロゲンランプＨＬが配設されるとともに、上段よりも保持部７から遠い下段にも２０本のハロゲンランプＨＬが配設されている。各ハロゲンランプＨＬは、長尺の円筒形状を有する棒状ランプである。上段、下段ともに２０本のハロゲンランプＨＬは、それぞれの長手方向が保持部７に保持される半導体ウェハーＷの主面に沿って（つまり水平方向に沿って）互いに平行となるように配列されている。よって、上段、下段ともにハロゲンランプＨＬの配列によって形成される平面は水平面である。 FIG. 7 is a plan view showing an arrangement of a plurality of halogen lamps HL. The forty halogen lamps HL are arranged in two upper and lower stages. Twenty halogen lamps HL are arranged in an upper stage near the holding unit 7 and 20 halogen lamps HL are arranged in a lower stage farther from the holding unit 7 than the upper stage. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. The upper and lower 20 halogen lamps HL are arranged so that their respective longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (that is, along the horizontal direction). I have. Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper and lower stages is a horizontal plane.
　また、図７に示すように、上段、下段ともに保持部７に保持される半導体ウェハーＷの中央部に対向する領域よりも周縁部に対向する領域におけるハロゲンランプＨＬの配設密度が高くなっている。すなわち、上下段ともに、ランプ配列の中央部よりも周縁部の方がハロゲンランプＨＬの配設ピッチが短い。このため、ハロゲン加熱部４からの光照射による加熱時に温度低下が生じやすい半導体ウェハーＷの周縁部により多い光量の照射を行うことができる。 Further, as shown in FIG. 7, the arrangement density of the halogen lamps HL in the region opposed to the peripheral portion is higher than the region opposed to the central portion of the semiconductor wafer W held by the holding portion 7 in both the upper and lower stages. I have. That is, in both upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter at the periphery than at the center of the lamp array. For this reason, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W where the temperature is likely to decrease during heating by light irradiation from the halogen heating unit 4.
　また、上段のハロゲンランプＨＬからなるランプ群と下段のハロゲンランプＨＬからなるランプ群とが格子状に交差するように配列されている。すなわち、上段に配置された２０本のハロゲンランプＨＬの長手方向と下段に配置された２０本のハロゲンランプＨＬの長手方向とが互いに直交するように計４０本のハロゲンランプＨＬが配設されている。 {Also, a lamp group composed of the upper halogen lamps HL and a lamp group composed of the lower halogen lamps HL are arranged so as to intersect in a grid pattern. That is, a total of 40 halogen lamps HL are arranged such that the longitudinal direction of the 20 halogen lamps HL arranged in the upper stage and the longitudinal direction of the 20 halogen lamps HL arranged in the lower stage are orthogonal to each other. I have.
　ハロゲンランプＨＬは、ガラス管内部に配設されたフィラメントに通電することでフィラメントを白熱化させて発光させるフィラメント方式の光源である。ガラス管の内部には、窒素やアルゴン等の不活性ガスにハロゲン元素（ヨウ素、臭素等）を微量導入した気体が封入されている。ハロゲン元素を導入することによって、フィラメントの折損を抑制しつつフィラメントの温度を高温に設定することが可能となる。したがって、ハロゲンランプＨＬは、通常の白熱電球に比べて寿命が長くかつ強い光を連続的に照射できるという特性を有する。すなわち、ハロゲンランプＨＬは少なくとも１秒以上連続して発光する連続点灯ランプである。また、ハロゲンランプＨＬは棒状ランプであるため長寿命であり、ハロゲンランプＨＬを水平方向に沿わせて配置することにより上方の半導体ウェハーＷへの放射効率が優れたものとなる。 The halogen lamp HL is a filament type light source which emits light by incandescent the filament by energizing the filament provided inside the glass tube. A gas in which a trace amount of a halogen element (iodine, bromine, or the like) is introduced into an inert gas such as nitrogen or argon is sealed inside the glass tube. By introducing a halogen element, it is possible to set the temperature of the filament to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp HL has a characteristic that it has a longer life and can continuously emit strong light as compared with a normal incandescent lamp. That is, the halogen lamp HL is a continuous lighting lamp that emits light continuously for at least one second. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life. By arranging the halogen lamp HL along the horizontal direction, the radiation efficiency to the upper semiconductor wafer W becomes excellent.
　また、ハロゲン加熱部４の筐体４１内にも、２段のハロゲンランプＨＬの下側にリフレクタ４３が設けられている（図１）。リフレクタ４３は、複数のハロゲンランプＨＬから出射された光を熱処理空間６５の側に反射する。 {Circle around (1)} Also, a reflector 43 is provided below the two-stage halogen lamp HL in the housing 41 of the halogen heating unit 4 (FIG. 1). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the heat treatment space 65 side.
　制御部３は、熱処理装置１に設けられた上記の種々の動作機構を制御する。制御部３のハードウェアとしての構成は一般的なコンピュータと同様である。すなわち、制御部３は、各種演算処理を行う回路であるＣＰＵ、基本プログラムを記憶する読み出し専用のメモリであるＲＯＭ、各種情報を記憶する読み書き自在のメモリであるＲＡＭおよび制御用ソフトウェアやデータなどを記憶しておく磁気ディスクを備えている。制御部３のＣＰＵが所定の処理プログラムを実行することによって熱処理装置１における処理が進行する。 The control unit 3 controls the various operation mechanisms described above provided in the heat treatment apparatus 1. The configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 includes a CPU that is a circuit for performing various arithmetic processing, a ROM that is a read-only memory that stores a basic program, a RAM that is a readable and writable memory that stores various information, and control software and data. It has a magnetic disk for storing. The processing in the heat treatment apparatus 1 proceeds when the CPU of the control unit 3 executes a predetermined processing program.
　上記の構成以外にも熱処理装置１は、半導体ウェハーＷの熱処理時にハロゲンランプＨＬおよびフラッシュランプＦＬから発生する熱エネルギーによるハロゲン加熱部４、フラッシュ加熱部５およびチャンバー６の過剰な温度上昇を防止するため、様々な冷却用の構造を備えている。例えば、チャンバー６の壁体には水冷管（図示省略）が設けられている。また、ハロゲン加熱部４およびフラッシュ加熱部５は、内部に気体流を形成して排熱する空冷構造とされている。また、上側チャンバー窓６３とランプ光放射窓５３との間隙にも空気が供給され、フラッシュ加熱部５および上側チャンバー窓６３を冷却する。 In addition to the above-described configuration, the heat treatment apparatus 1 prevents an excessive rise in temperature of the halogen heating unit 4, the flash heating unit 5, and the chamber 6 due to heat energy generated from the halogen lamp HL and the flash lamp FL during the heat treatment of the semiconductor wafer W. Therefore, it has various cooling structures. For example, a water cooling tube (not shown) is provided on the wall of the chamber 6. Further, the halogen heating unit 4 and the flash heating unit 5 have an air cooling structure that forms a gas flow inside and discharges heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash heating unit 5 and the upper chamber window 63.
　次に、熱処理装置１における処理動作について説明する。まず、処理対象となる半導体ウェハーＷに対する熱処理の手順について説明する。ここで処理対象となる半導体ウェハーＷは、シリコンの基材上にガリウムヒ素の半導体薄膜が形成された半導体基板である。そのガリウムヒ素の半導体薄膜に注入された不純物の活性化が熱処理装置１によるフラッシュ光照射加熱処理（アニール）により実行される。以下に説明する半導体ウェハーＷの処理手順は、制御部３が熱処理装置１の各動作機構を制御することにより進行する。 Next, the processing operation in the heat treatment apparatus 1 will be described. First, the procedure of the heat treatment for the semiconductor wafer W to be processed will be described. Here, the semiconductor wafer W to be processed is a semiconductor substrate having a gallium arsenide semiconductor thin film formed on a silicon base material. The activation of the impurities implanted in the gallium arsenide semiconductor thin film is performed by flash light irradiation heat treatment (annealing) by the heat treatment apparatus 1. The processing procedure of the semiconductor wafer W described below proceeds by the control unit 3 controlling each operation mechanism of the heat treatment apparatus 1.
　まず、給気バルブ８４が開放されるとともに、排気バルブ８９が開放されてチャンバー６内に対する給排気が開始される。給気バルブ８４が開放されると、ガス供給孔８１から熱処理空間６５に窒素ガスが供給される。また、排気バルブ８９が開放されると、ガス排気孔８６からチャンバー６内の気体が排気される。これにより、チャンバー６内の熱処理空間６５の上部から供給された窒素ガスが下方へと流れ、熱処理空間６５の下部から排気される。 {Circle around (1)} First, the air supply valve 84 is opened, and the exhaust valve 89 is opened, and air supply and exhaust to the chamber 6 are started. When the air supply valve 84 is opened, nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65. When the exhaust valve 89 is opened, the gas in the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward, and is exhausted from the lower part of the heat treatment space 65.
　続いて、ゲートバルブ１８５が開いて搬送開口部６６が開放され、装置外部の搬送ロボットにより搬送開口部６６を介して処理対象となる半導体ウェハーＷがチャンバー６内の熱処理空間６５に搬入される。このときには、半導体ウェハーＷの搬入にともなって装置外部の雰囲気を巻き込むおそれがあるが、チャンバー６には窒素ガスが供給され続けているため、搬送開口部６６から窒素ガスが流出して、そのような外部雰囲気の巻き込みを最小限に抑制することができる。 (4) Subsequently, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W to be processed is carried into the heat treatment space 65 in the chamber 6 via the transfer opening 66 by the transfer robot outside the apparatus. At this time, there is a possibility that the atmosphere outside the apparatus may be involved when the semiconductor wafer W is loaded, but since the nitrogen gas is continuously supplied to the chamber 6, the nitrogen gas flows out from the transfer opening 66, and Entrapment of an external atmosphere can be minimized.
　搬送ロボットによって搬入された半導体ウェハーＷは保持部７の直上位置まで進出して停止する。そして、移載機構１０の一対の移載アーム１１が退避位置から移載動作位置に水平移動して上昇することにより、リフトピン１２が貫通孔７９を通ってサセプタ７４の保持プレート７５の上面から突き出て半導体ウェハーＷを受け取る。このとき、リフトピン１２は基板支持ピン７７の上端よりも上方にまで上昇する。 (4) The semiconductor wafer W carried in by the transfer robot advances to a position immediately above the holding unit 7 and stops. When the pair of transfer arms 11 of the transfer mechanism 10 move horizontally from the retreat position to the transfer operation position and rise, the lift pins 12 protrude from the upper surface of the holding plate 75 of the susceptor 74 through the through holes 79. To receive the semiconductor wafer W. At this time, the lift pins 12 rise above the upper ends of the substrate support pins 77.
　半導体ウェハーＷがリフトピン１２に載置された後、搬送ロボットが熱処理空間６５から退出し、ゲートバルブ１８５によって搬送開口部６６が閉鎖される。そして、一対の移載アーム１１が下降することにより、半導体ウェハーＷは移載機構１０から保持部７のサセプタ７４に受け渡されて水平姿勢にて下方より保持される。半導体ウェハーＷは、保持プレート７５上に立設された複数の基板支持ピン７７によって支持されてサセプタ７４に保持される。また、半導体ウェハーＷは、ガリウムヒ素の半導体薄膜が形成された表面を上面として保持部７に保持される。複数の基板支持ピン７７によって支持された半導体ウェハーＷの裏面（表面とは反対側の主面）と保持プレート７５の保持面７５ａとの間には所定の間隔が形成される。サセプタ７４の下方にまで下降した一対の移載アーム１１は水平移動機構１３によって退避位置、すなわち凹部６２の内側に退避する。 After the semiconductor wafer W is mounted on the lift pins 12, the transfer robot exits the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. When the pair of transfer arms 11 is lowered, the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holding unit 7 and is held from below in a horizontal posture. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on a holding plate 75 and held by a susceptor 74. The semiconductor wafer W is held by the holder 7 with the surface on which the gallium arsenide semiconductor thin film is formed as the upper surface. A predetermined gap is formed between the back surface (main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11 descending to below the susceptor 74 are retracted by the horizontal moving mechanism 13 to the retracted position, that is, to the inside of the concave portion 62.
　半導体ウェハーＷが石英にて形成された保持部７のサセプタ７４によって水平姿勢にて下方より保持された後、ハロゲン加熱部４の４０本のハロゲンランプＨＬが一斉に点灯して予備加熱（アシスト加熱）が開始される。ハロゲンランプＨＬから出射されたハロゲン光は、石英にて形成された下側チャンバー窓６４およびサセプタ７４を透過して半導体ウェハーＷの下面に照射される。ハロゲンランプＨＬからの光照射を受けることによって半導体ウェハーＷが予備加熱されて温度が上昇する。なお、移載機構１０の移載アーム１１は凹部６２の内側に退避しているため、ハロゲンランプＨＬによる加熱の障害となることは無い。 After the semiconductor wafer W is held from below in a horizontal position by the susceptor 74 of the holding unit 7 formed of quartz, the 40 halogen lamps HL of the halogen heating unit 4 are simultaneously turned on to perform preliminary heating (assist heating). ) Is started. The halogen light emitted from the halogen lamp HL passes through the lower chamber window 64 and the susceptor 74 formed of quartz and irradiates the lower surface of the semiconductor wafer W. Upon receiving the light irradiation from the halogen lamp HL, the semiconductor wafer W is preheated and the temperature rises. Since the transfer arm 11 of the transfer mechanism 10 is retracted inside the concave portion 62, there is no obstacle to heating by the halogen lamp HL.
　ハロゲンランプＨＬによる予備加熱を行うときには、半導体ウェハーＷの温度が放射温度計２０によって測定されている。すなわち、サセプタ７４に保持された半導体ウェハーＷの下面から開口部７８を介して放射された赤外光を透明窓２１を通して放射温度計２０が受光して昇温中のウェハー温度を測定する。測定された半導体ウェハーＷの温度は制御部３に伝達される。制御部３は、ハロゲンランプＨＬからの光照射によって昇温する半導体ウェハーＷの温度が所定の予備加熱温度Ｔ１に到達したか否かを監視しつつ、ハロゲンランプＨＬの出力を制御する。すなわち、制御部３は、放射温度計２０による測定値に基づいて、半導体ウェハーＷの温度が予備加熱温度Ｔ１となるようにハロゲンランプＨＬの出力をフィードバック制御する。 (4) When performing preliminary heating by the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the radiation thermometer 20. That is, the radiation thermometer 20 receives infrared light radiated from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78 through the transparent window 21 and measures the temperature of the wafer being heated. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 controls the output of the halogen lamp HL while monitoring whether or not the temperature of the semiconductor wafer W which is heated by the irradiation of light from the halogen lamp HL has reached a predetermined preheating temperature T1. That is, the control unit 3 performs feedback control of the output of the halogen lamp HL based on the value measured by the radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1.
　半導体ウェハーＷの温度が予備加熱温度Ｔ１に到達した後、制御部３は半導体ウェハーＷをその予備加熱温度Ｔ１に暫時維持する。具体的には、放射温度計２０によって測定される半導体ウェハーＷの温度が予備加熱温度Ｔ１に到達した時点にて制御部３がハロゲンランプＨＬの出力を調整し、半導体ウェハーＷの温度をほぼ予備加熱温度Ｔ１に維持している。 (4) After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL to substantially reduce the temperature of the semiconductor wafer W to the preliminary temperature. The heating temperature T1 is maintained.
　このようなハロゲンランプＨＬによる予備加熱を行うことによって、半導体ウェハーＷの全体を予備加熱温度Ｔ１に均一に昇温している。ハロゲンランプＨＬによる予備加熱の段階においては、より放熱が生じやすい半導体ウェハーＷの周縁部の温度が中央部よりも低下する傾向にあるが、ハロゲン加熱部４におけるハロゲンランプＨＬの配設密度は、基板Ｗの中央部に対向する領域よりも周縁部に対向する領域の方が高くなっている。このため、放熱が生じやすい半導体ウェハーＷの周縁部に照射される光量が多くなり、予備加熱段階における半導体ウェハーＷの面内温度分布を均一なものとすることができる。 (4) By performing such preheating by the halogen lamp HL, the entire semiconductor wafer W is uniformly heated to the preheating temperature T1. At the stage of preheating by the halogen lamp HL, the temperature of the peripheral portion of the semiconductor wafer W where heat radiation tends to occur tends to be lower than that of the central portion, but the arrangement density of the halogen lamp HL in the halogen heating section 4 is: The region facing the peripheral portion is higher than the region facing the center of the substrate W. For this reason, the amount of light applied to the peripheral portion of the semiconductor wafer W where heat radiation easily occurs is increased, and the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made uniform.
　半導体ウェハーＷの温度が予備加熱温度Ｔ１に到達して所定時間が経過した時点にてフラッシュ加熱部５のフラッシュランプＦＬがサセプタ７４に保持された半導体ウェハーＷの表面にフラッシュ光照射を行う。このとき、フラッシュランプＦＬから放射されるフラッシュ光の一部は直接にチャンバー６内へと向かい、他の一部は一旦リフレクタ５２により反射されてからチャンバー６内へと向かい、これらのフラッシュ光の照射により半導体ウェハーＷのフラッシュ加熱が行われる。 (4) When a predetermined time has elapsed after the temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp FL of the flash heating unit 5 irradiates the surface of the semiconductor wafer W held by the susceptor 74 with flash light. At this time, a part of the flash light radiated from the flash lamp FL goes directly into the chamber 6, and the other part is once reflected by the reflector 52 and then goes into the chamber 6. The flash heating of the semiconductor wafer W is performed by the irradiation.
　フラッシュ加熱は、フラッシュランプＦＬからのフラッシュ光（閃光）照射により行われるため、半導体ウェハーＷの表面温度を短時間で上昇することができる。すなわち、フラッシュランプＦＬから照射されるフラッシュ光は、予めコンデンサーに蓄えられていた静電エネルギーが極めて短い光パルスに変換された、照射時間が０．１ミリセカンド以上１００ミリセカンド以下程度の極めて短く強い閃光である。そして、フラッシュランプＦＬからのフラッシュ光照射によりフラッシュ加熱される半導体ウェハーＷの表面温度は、瞬間的に処理温度Ｔ２まで上昇し、半導体ウェハーＷに注入された不純物が活性化された後、表面温度が急速に下降する。このように、熱処理装置１では、半導体ウェハーＷの表面温度を極めて短時間で昇降することができるため、半導体ウェハーＷに注入された不純物の熱による拡散を抑制しつつ不純物の活性化を行うことができる。なお、不純物の活性化に必要な時間はその熱拡散に必要な時間に比較して極めて短いため、０．１ミリセカンドないし１００ミリセカンド程度の拡散が生じない短時間であっても活性化は完了する。 (4) Since the flash heating is performed by irradiating flash light (flash light) from the flash lamp FL, the surface temperature of the semiconductor wafer W can be increased in a short time. That is, the flash light emitted from the flash lamp FL is converted into a light pulse in which the electrostatic energy previously stored in the condenser is extremely short, and the irradiation time is extremely short, from about 0.1 millisecond to about 100 milliseconds. It is a strong flash. Then, the surface temperature of the semiconductor wafer W, which is flash-heated by flash light irradiation from the flash lamp FL, instantaneously rises to the processing temperature T2, and after the impurities injected into the semiconductor wafer W are activated, the surface temperature becomes higher. Falls rapidly. As described above, in the heat treatment apparatus 1, since the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time, it is possible to activate the impurities while suppressing diffusion of the impurities injected into the semiconductor wafer W due to heat. Can be. Since the time required for activating the impurity is extremely shorter than the time required for thermal diffusion, the activation is performed even in a short time in which diffusion of about 0.1 to 100 milliseconds does not occur. Complete.
　フラッシュ加熱処理が終了した後、所定時間経過後にハロゲンランプＨＬが消灯する。これにより、半導体ウェハーＷが予備加熱温度Ｔ１から急速に降温する。降温中の半導体ウェハーＷの温度は放射温度計２０によって測定され、その測定結果は制御部３に伝達される。制御部３は、放射温度計２０の測定結果より半導体ウェハーＷの温度が所定温度まで降温したか否かを監視する。そして、半導体ウェハーＷの温度が所定以下にまで降温した後、移載機構１０の一対の移載アーム１１が再び退避位置から移載動作位置に水平移動して上昇することにより、リフトピン１２がサセプタ７４の上面から突き出て熱処理後の半導体ウェハーＷをサセプタ７４から受け取る。続いて、ゲートバルブ１８５により閉鎖されていた搬送開口部６６が開放され、リフトピン１２上に載置された半導体ウェハーＷが装置外部の搬送ロボットにより搬出され、熱処理装置１における半導体ウェハーＷの加熱処理が完了する。 (4) After the flash heating process is completed, the halogen lamp HL is turned off after a lapse of a predetermined time. As a result, the temperature of the semiconductor wafer W rapidly drops from the preheating temperature T1. The temperature of the semiconductor wafer W during the temperature decrease is measured by the radiation thermometer 20, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether or not the temperature of the semiconductor wafer W has dropped to a predetermined temperature based on the measurement result of the radiation thermometer 20. Then, after the temperature of the semiconductor wafer W has dropped to a predetermined value or less, the pair of transfer arms 11 of the transfer mechanism 10 move horizontally again from the retreat position to the transfer operation position and rise, so that the lift pins 12 The semiconductor wafer W protruding from the upper surface of the semiconductor wafer 74 and having undergone the heat treatment is received from the susceptor 74. Subsequently, the transfer opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W mounted on the lift pins 12 is unloaded by the transfer robot outside the apparatus, and the semiconductor wafer W is heated in the heat treatment apparatus 1 by heat treatment. Is completed.
　ところで、本実施形態においては、ガリウムヒ素の半導体薄膜が形成された半導体ウェハーＷの加熱処理を行っている。ガリウムヒ素は４００℃以上に加熱されるとヒ素が外方拡散によって半導体薄膜から放出されることが知られている。上記の予備加熱温度Ｔ１が４００℃以上であると、ハロゲンランプＨＬによる予備加熱時に半導体ウェハーＷからヒ素が放出されることとなる。また、処理温度Ｔ２が４００℃以上であれば、短時間ではあるもののフラッシュランプＦＬによるフラッシュ加熱時にも半導体ウェハーＷからヒ素が放出される。半導体ウェハーＷから放出されたヒ素は気体としてチャンバー６内の熱処理空間６５に存在している。ヒ素は微量でも有害であり、半導体ウェハーＷから放出されたヒ素が熱処理装置１の外部に排出されないようにする必要がある。 In the present embodiment, the semiconductor wafer W on which the gallium arsenide semiconductor thin film is formed is subjected to the heat treatment. It is known that gallium arsenide is released from a semiconductor thin film by outward diffusion when heated to 400 ° C. or higher. If the above preheating temperature T1 is 400 ° C. or higher, arsenic is released from the semiconductor wafer W during preheating by the halogen lamp HL. If the processing temperature T2 is 400 ° C. or higher, arsenic is released from the semiconductor wafer W even during flash heating by the flash lamp FL for a short time. Arsenic released from the semiconductor wafer W exists in the heat treatment space 65 in the chamber 6 as a gas. Arsenic is harmful even in a trace amount, and it is necessary to prevent arsenic released from the semiconductor wafer W from being discharged outside the heat treatment apparatus 1.
　このため、熱処理装置１にはトラップボックス９０を設けている。排気バルブ８９が開放されると、ヒ素を含むチャンバー６内の雰囲気はガス排気孔８６からガス排気管８８へと排出される。ヒ素を含む気体はガス排気管８８を流れて給気口９７からトラップボックス９０の内部に流入する。図９に示すように、給気口９７からトラップボックス９０の内部に流入した気体は、ラジエーター９２の複数の冷却管９３の間を通り抜ける。ヒ素を含む気体が複数の冷却管９３の間を通り抜けるときに室温にまで冷却され、これによって気体のヒ素が固体として析出する。 Therefore, a trap box 90 is provided in the heat treatment apparatus 1. When the exhaust valve 89 is opened, the atmosphere in the chamber 6 containing arsenic is exhausted from the gas exhaust hole 86 to the gas exhaust pipe 88. The gas containing arsenic flows through the gas exhaust pipe 88 and flows into the trap box 90 from the air supply port 97. As shown in FIG. 9, the gas flowing into the trap box 90 from the air supply port 97 passes between the plurality of cooling pipes 93 of the radiator 92. As the gas containing arsenic passes between the plurality of cooling tubes 93, it is cooled to room temperature, whereby gaseous arsenic precipitates as a solid.
　続いて、ラジエーター９２によって冷却された気体流がトラッププレート９５に衝突する。図９に示すように、トラッププレート９５に衝突した気体流は、開放されているトラッププレート９５の下方に向けて流れの向きを変える。このときに、冷却されて析出した固体のヒ素がトラッププレート９５に付着することによって捕獲される。 Subsequently, the gas flow cooled by the radiator 92 collides with the trap plate 95. As shown in FIG. 9, the gas flow colliding with the trap plate 95 changes the direction of the flow downward of the open trap plate 95. At this time, the solid arsenic precipitated by cooling is attached to the trap plate 95 and captured.
　トラッププレート９５の下方へと向かった気体流は、トラッププレート９５下方の開放部分を超えてトラップボックス９０の奥側へ流れる。このときに、気体流はウェハー収容部９６に載置された計測用ウェハーＭＷの表面にも接触することとなり、析出した固体のヒ素の一部は計測用ウェハーＭＷの表面にも付着する。また、トラッププレート９５に捕獲されたヒ素の一部は計測用ウェハーＭＷの表面に落下する。 (4) The gas flow directed to the lower side of the trap plate 95 flows to the far side of the trap box 90 beyond the open portion below the trap plate 95. At this time, the gas flow also comes into contact with the surface of the measurement wafer MW placed in the wafer accommodating section 96, and a part of the deposited solid arsenic also adheres to the surface of the measurement wafer MW. Further, a part of the arsenic captured by the trap plate 95 falls on the surface of the measurement wafer MW.
　トラッププレート９５の下方を超えた気体流は排気口９８から再びガス排気管８８に流出して排気部１９０へと排出される。トラップボックス９０の給気口９７から流入した気体に含まれていたヒ素はラジエーター９２で冷却されることによって固体として析出し、その析出したヒ素はトラッププレート９５および計測用ウェハーＭＷに付着して捕獲される。従って、トラップボックス９０の排気口９８から流出する気体には有害なヒ素が含まれておらず、無害な気体が排気部１９０から熱処理装置１の外部に排出されることとなる。 The gas flow that has passed below the trap plate 95 flows out of the exhaust port 98 again into the gas exhaust pipe 88 and is discharged to the exhaust section 190. Arsenic contained in the gas flowing from the air supply port 97 of the trap box 90 is precipitated as a solid by being cooled by the radiator 92, and the deposited arsenic adheres to the trap plate 95 and the measurement wafer MW to be captured. Is done. Accordingly, harmful arsenic is not contained in the gas flowing out from the exhaust port 98 of the trap box 90, and harmless gas is discharged from the exhaust unit 190 to the outside of the heat treatment apparatus 1.
　このように、ヒ素は有害ではあるものの、室温程度にまで冷却されることによって固体として析出するという特性を有する。本発明は、このようなヒ素の特性を利用して完成されたものであり、チャンバー６から排出された気体をラジエーター９２で冷却することによってヒ素を固体として析出させて捕獲することにより有害なヒ素を除去している。そして、本実施形態においては、筐体９１の内部にラジエーター９２およびトラッププレート９５を設けるという簡易な構成のトラップボックス９０によって加熱処理時に半導体ウェハーＷから放出されたヒ素を回収して無害化している。よって、スクラバや特殊な除外装置等を組み込むことなく、簡易な構成にて有害物質であるヒ素の外部への排出を防止することができる。 ヒ Although arsenic is harmful, it has the property of being precipitated as a solid when cooled to about room temperature. The present invention has been completed by utilizing such characteristics of arsenic. By cooling the gas discharged from the chamber 6 with the radiator 92, the arsenic is deposited as a solid, and the arsenic is harmful. Has been removed. In the present embodiment, the arsenic released from the semiconductor wafer W during the heat treatment is collected and rendered harmless by the trap box 90 having a simple configuration in which the radiator 92 and the trap plate 95 are provided inside the casing 91. . Therefore, it is possible to prevent harmful arsenic from being discharged to the outside with a simple configuration without incorporating a scrubber or a special exclusion device.
　また、ウェハー収容部９６に載置された計測用ウェハーＭＷを取り出し、その計測用ウェハーＭＷの表面に付着した粒子を分析することによって、ヒ素が析出して捕獲されているか否かを確認することができる。計測用ウェハーＭＷの表面からヒ素が検出されない、或いはヒ素の検出量が顕著に少ない場合には、トラップボックス９０によって十分にヒ素が回収されていない可能性が疑われる。 In addition, the measurement wafer MW placed in the wafer accommodating portion 96 is taken out, and particles attached to the surface of the measurement wafer MW are analyzed to confirm whether or not arsenic is deposited and captured. Can be. If arsenic is not detected from the surface of measurement wafer MW, or if the amount of arsenic detected is remarkably small, it is suspected that arsenic may not be sufficiently collected by trap box 90.
　また、ラジエーター９２およびトラッププレート９５は着脱可能に設けられているため、析出したヒ素が付着することによって汚染されたラジエーター９２およびトラッププレート９５を適当なタイミングで交換することができる。ラジエーター９２およびトラッププレート９５は、定期的に交換するようにしても良いし、汚染状況に基づいて交換するようにしても良い。 Further, since the radiator 92 and the trap plate 95 are detachably provided, the radiator 92 and the trap plate 95 which are contaminated by the deposited arsenic can be replaced at an appropriate timing. The radiator 92 and the trap plate 95 may be replaced periodically, or may be replaced based on the state of contamination.
　以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、上記実施形態においては、筐体９１の内部にラジエーター９２、トラッププレート９５およびウェハー収容部９６を備えていたが、トラッププレート９５およびウェハー収容部９６は必須の要素ではなく、少なくとも筐体９１の内部にラジエーター９２が設けられていれば良い。少なくともラジエーター９２が設けられていれば、チャンバー６から排出された気体を冷却してヒ素を固体として析出させ、そのヒ素を筐体９１の内壁面によって捕獲することができる。このようにしても、ヒ素の外部への排出を防止することができる。もっとも、上記実施形態のように、トラッププレート９５を設けている方がより確実に析出したヒ素を捕獲して回収することができる。 Although the embodiments of the present invention have been described above, various changes other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the radiator 92, the trap plate 95, and the wafer accommodating portion 96 are provided inside the housing 91. However, the trap plate 95 and the wafer accommodating portion 96 are not essential elements. It is sufficient that a radiator 92 is provided in the inside. If at least the radiator 92 is provided, the gas discharged from the chamber 6 can be cooled to deposit arsenic as a solid, and the arsenic can be captured by the inner wall surface of the housing 91. Even in this case, it is possible to prevent arsenic from being discharged to the outside. However, when the trap plate 95 is provided as in the above embodiment, the deposited arsenic can be more reliably captured and recovered.
　また、上記実施形態においては、複数の冷却管９３を備えたラジエーター９２によって気体流を冷却していたが、これに限定されるものではなく、例えばペルチェ素子等の他の冷却機構によって気体流を冷却するようにしても良い。 Further, in the above embodiment, the gas flow is cooled by the radiator 92 having the plurality of cooling pipes 93. However, the present invention is not limited to this. For example, the gas flow is cooled by another cooling mechanism such as a Peltier device. You may make it cool.
　また、チャンバー６内を減圧雰囲気として半導体ウェハーＷの加熱処理を行うようにしても良い。この場合であっても、半導体ウェハーＷから放出されたヒ素をトラップボックス９０にて析出させて捕獲することにより、上記実施形態と同様の効果を得ることができる。但し、チャンバー６内を減圧雰囲気としたときにはトラップボックス９０の内部も大気圧未満の減圧状態となるため、トラッププレート９５の材質は減圧下でも使用可能な金属材料が好ましい。 (4) The semiconductor wafer W may be subjected to a heat treatment by setting the inside of the chamber 6 to a reduced pressure atmosphere. Even in this case, the same effect as in the above embodiment can be obtained by depositing and capturing arsenic released from the semiconductor wafer W in the trap box 90. However, when the inside of the chamber 6 is set to a reduced pressure atmosphere, the inside of the trap box 90 is also set to a reduced pressure lower than the atmospheric pressure. Therefore, the material of the trap plate 95 is preferably a metal material that can be used even under reduced pressure.
　また、上記実施形態においては、フラッシュ加熱部５に３０本のフラッシュランプＦＬを備えるようにしていたが、これに限定されるものではなく、フラッシュランプＦＬの本数は任意の数とすることができる。また、フラッシュランプＦＬはキセノンフラッシュランプに限定されるものではなく、クリプトンフラッシュランプであっても良い。また、ハロゲン加熱部４に備えるハロゲンランプＨＬの本数も４０本に限定されるものではなく、任意の数とすることができる。 Further, in the above embodiment, the flash heating unit 5 is provided with 30 flash lamps FL, but the present invention is not limited to this, and the number of flash lamps FL can be any number. . The flash lamp FL is not limited to a xenon flash lamp, but may be a krypton flash lamp. Further, the number of halogen lamps HL provided in the halogen heating unit 4 is not limited to 40 but may be any number.
　また、上記実施形態においては、１秒以上連続して発光する連続点灯ランプとしてフィラメント方式のハロゲンランプＨＬを用いて半導体ウェハーＷの予備加熱を行っていたが、これに限定されるものではなく、ハロゲンランプＨＬに代えて放電型のアークランプ（例えば、キセノンアークランプ）を連続点灯ランプとして用いて予備加熱を行うようにしても良い。 Further, in the above-described embodiment, the preheating of the semiconductor wafer W is performed by using the filament type halogen lamp HL as a continuous lighting lamp that emits light continuously for 1 second or more. However, the present invention is not limited to this. The preliminary heating may be performed using a discharge type arc lamp (for example, a xenon arc lamp) as a continuous lighting lamp instead of the halogen lamp HL.
　また、半導体ウェハーＷを加熱する加熱源はランプに限定されるものではなく、例えばヒータを備えたホットプレートによって半導体ウェハーＷを加熱するようにしても良い。 The heating source for heating the semiconductor wafer W is not limited to a lamp, and the semiconductor wafer W may be heated by, for example, a hot plate provided with a heater.
　また、熱処理装置１によって処理対象となる基板は半導体ウェハーに限定されるものではなく、液晶表示装置などのフラットパネルディスプレイに用いるガラス基板や太陽電池用の基板であっても良い。基板に形成される膜はガリウムヒ素に限定されるものではなく、ヒ素を含む膜であれば良い。さらには、ヒ素に限らず、冷却されることによって固体として析出する有害物質を放出する基板の熱処理に本発明に係る技術は好適である。 The substrate to be processed by the heat treatment apparatus 1 is not limited to a semiconductor wafer, but may be a glass substrate used for a flat panel display such as a liquid crystal display device or a substrate for a solar cell. The film formed on the substrate is not limited to gallium arsenide, and may be any film containing arsenic. Further, the technology according to the present invention is suitable for heat treatment of a substrate that releases not only arsenic but also harmful substances that precipitate as a solid when cooled.
　１　熱処理装置
　３　制御部
　４　ハロゲン加熱部
　５　フラッシュ加熱部
　６　チャンバー
　７　保持部
　１０　移載機構
　６３　上側チャンバー窓
　６４　下側チャンバー窓
　６５　熱処理空間
　７４　サセプタ
　８８　ガス排気管
　９０　トラップボックス
　９１　筐体
　９２　ラジエーター
　９３　冷却管
　９５　トラッププレート
　９６　ウェハー収容部
　ＦＬ　フラッシュランプ
　ＨＬ　ハロゲンランプ
　ＭＷ　計測用ウェハー
　Ｗ　半導体ウェハー REFERENCE SIGNS LIST 1 heat treatment device 3 control unit 4 halogen heating unit 5 flash heating unit 6 chamber 7 holding unit 10 transfer mechanism 63 upper chamber window 64 lower chamber window 65 heat treatment space 74 susceptor 88 gas exhaust pipe 90 trap box 91 casing 92 radiator 93 Cooling tube 95 Trap plate 96 Wafer accommodating section FL Flash lamp HL Halogen lamp MW Measurement wafer W Semiconductor wafer

Claims (5)

  1. 　基板を加熱する熱処理装置であって、
    　基板を収容するチャンバーと、
    　前記チャンバー内に収容された前記基板を加熱する加熱源と、
    　前記チャンバー内の雰囲気を排出する排気経路と、
    　前記排気経路に設けられ、前記雰囲気中に含まれる物質を捕獲するトラップ部と、
    を備え、
    　前記トラップ部は、筐体の内部に当該筐体を通過する気流を冷却する冷却部を設ける熱処理装置。     A heat treatment apparatus for heating a substrate,
    A chamber for accommodating the substrate;
    A heating source for heating the substrate housed in the chamber,
    An exhaust path for exhausting the atmosphere in the chamber;
    A trap unit that is provided in the exhaust path and captures a substance contained in the atmosphere;
    With
    The heat treatment apparatus, wherein the trap unit includes a cooling unit that cools an airflow passing through the housing inside the housing.
  2. 　請求項１記載の熱処理装置において、
    　前記トラップ部は、前記冷却部によって冷却された気流が衝突するトラップ板を前記筐体の内部にさらに備える熱処理装置。     The heat treatment apparatus according to claim 1,
    The heat treatment apparatus, wherein the trap unit further includes a trap plate with which the airflow cooled by the cooling unit collides, inside the housing.
  3. 　請求項２記載の熱処理装置において、
    　前記トラップ部は、前記冷却部が前記気流を冷却することによって析出した前記物質を付着させる捕集基板を収容する収容部を前記筐体の内部にさらに備える熱処理装置。     The heat treatment apparatus according to claim 2,
    The heat treatment apparatus, wherein the trap unit further includes a storage unit that stores a collection substrate to which the substance deposited by the cooling unit cooling the airflow is attached.
  4. 　請求項１から請求項３のいずれかに記載の熱処理装置において、
    　前記加熱源は、基板に光を照射して加熱するランプを備える熱処理装置。     The heat treatment apparatus according to any one of claims 1 to 3,
    The heat treatment apparatus further includes a lamp configured to irradiate the substrate with light to heat the substrate.
  5. 　請求項１から請求項４のいずれかに記載の熱処理装置において、
    　前記物質はヒ素である熱処理装置。     The heat treatment apparatus according to any one of claims 1 to 4,
    A heat treatment apparatus, wherein the substance is arsenic.
PCT/JP2019/026045 2018-08-01 2019-07-01 Heat treatment apparatus WO2020026671A1 (en)

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JPS4915132U (en) * 1972-05-15 1974-02-08
JPH01102924A (en) * 1987-10-16 1989-04-20 Showa Denko Kk Heat treatment of semiconductor substrate
JPH0883773A (en) * 1994-09-13 1996-03-26 Toshiba Corp Thin film forming device
JP2009206167A (en) * 2008-02-26 2009-09-10 Stanley Electric Co Ltd Vapor growth device
JP2014535164A (en) * 2011-10-05 2014-12-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Particle control in laser processing systems.

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