WO2020021880A1 - Dispositif de conversion de courant - Google Patents

Dispositif de conversion de courant Download PDF

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Publication number
WO2020021880A1
WO2020021880A1 PCT/JP2019/022914 JP2019022914W WO2020021880A1 WO 2020021880 A1 WO2020021880 A1 WO 2020021880A1 JP 2019022914 W JP2019022914 W JP 2019022914W WO 2020021880 A1 WO2020021880 A1 WO 2020021880A1
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WO
WIPO (PCT)
Prior art keywords
capacitor
semiconductor device
cooler
main
terminal
Prior art date
Application number
PCT/JP2019/022914
Other languages
English (en)
Japanese (ja)
Inventor
友久 佐野
龍太 田辺
雄太 橋本
渉 舟津
Original Assignee
株式会社デンソー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2019013377A external-priority patent/JP6915633B2/ja
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Priority to CN201980048836.XA priority Critical patent/CN112470389A/zh
Priority to DE112019003704.8T priority patent/DE112019003704T5/de
Publication of WO2020021880A1 publication Critical patent/WO2020021880A1/fr
Priority to US17/155,729 priority patent/US11653481B2/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present disclosure relates to a power conversion device.
  • Patent Document 1 proposes a power conversion device.
  • This power conversion device includes a semiconductor module, a cooler, and a capacitor.
  • the semiconductor module is arranged on one side of the cooler, and the capacitor is arranged on the back side opposite to the one side in the thickness direction.
  • the semiconductor module semiconductor device
  • the present disclosure aims to provide a power conversion device that can reduce the size of a semiconductor device in a direction orthogonal to the thickness direction while cooling the semiconductor device.
  • a power converter includes a cooler having a flow path through which a refrigerant flows, having a back surface and a back surface opposite to the one surface in a thickness direction, a semiconductor device forming an upper and lower arm circuit, A plurality of power modules each having a capacitor arranged in parallel with the semiconductor device in the direction and connected in parallel to the upper and lower arm circuits. Power modules are respectively arranged on one surface and both surfaces on the back surface of the cooler.
  • each of the plurality of power modules includes not only the semiconductor device forming the upper and lower arm circuits, but also a capacitor connected in parallel to the upper and lower arm circuits.
  • a capacitor is provided for each power module, in other words, for each of the upper and lower arm circuits.
  • the semiconductor device and the capacitor are arranged side by side in the thickness direction.
  • FIG. 1 is an equivalent circuit diagram illustrating a drive system to which the power converter according to the first embodiment is applied.
  • FIG. 2 is a perspective view showing a semiconductor device
  • FIG. 3 is a sectional view taken along line III-III in FIG.
  • FIG. 4 is a plan view of the semiconductor device as viewed from the main terminal side
  • FIG. 5 is a view in which a sealing resin body is omitted from FIG.
  • FIG. 6 is a perspective view before cutting unnecessary portions of the lead frame.
  • FIG. 7 is a plan view showing the positional relationship between the IGBT and the main terminal.
  • FIG. 8 is a perspective view showing another example of the semiconductor device.
  • FIG. 9 is a perspective view illustrating another example of the semiconductor device.
  • FIG. 10 is a perspective view showing another example of the semiconductor device
  • FIG. 11 is a diagram showing a magnetic field analysis result of the inductance of the main terminal total
  • FIG. 12 is a perspective view showing another example of the semiconductor device.
  • FIG. 13 is a plan view showing another example of the semiconductor device, and is a diagram corresponding to FIG.
  • FIG. 14 is a plan view showing another example of the semiconductor device, and is a diagram corresponding to FIG.
  • FIG. 15 is a plan view showing another example of the semiconductor device, corresponding to FIG.
  • FIG. 16 is a plan view showing another example of the semiconductor device, and is a diagram corresponding to FIG. FIG.
  • FIG. 17 is a cross-sectional view illustrating another example of the semiconductor device and corresponds to FIG.
  • FIG. 18 is a sectional view taken along line XVIII-XVIII in FIG.
  • FIG. 19 is a cross-sectional view illustrating another example of the semiconductor device.
  • FIG. 20 is a plan view showing the positional relationship between the IGBT and the main terminal, and corresponds to FIG. It is a top view showing a power module
  • FIG. 22 is a sectional view taken along the line XXII-XXII of FIG. 21,
  • FIG. 22 is a plan view of FIG. 21 viewed from the back side,
  • FIG. 22 is a plan view of FIG. 21 viewed from a direction A,
  • FIG. 22 is a plan view of FIG.
  • FIG. 21 viewed from a direction B
  • FIG. 22 is a plan view of FIG. 21 viewed from a direction C
  • FIG. 36 is a plan view of FIG. 36 as viewed in the direction D
  • FIG. 37 is a plan view of FIG. 36 viewed from the direction E
  • FIG. 36 is a plan view of FIG. 36 viewed from the direction F
  • FIG. 36 is a plan view of FIG. 36 as viewed from the direction G
  • FIG. 37 is a sectional view taken along the line XLII-XLII of FIG. 36
  • FIG. 37 is a cross-sectional view of FIG. 36 taken along the line XLIII-XLIII
  • FIG. 37 is a sectional view taken along the line XLIV-XLIV of FIG.
  • FIG. 36 It is a plan view showing a cooling structure, It is a schematic cross-sectional view showing a cooling structure, It is a schematic sectional view showing another example of a cooling structure, It is a schematic plan view showing another example of the arrangement of the power module,
  • FIG. 13 is a schematic cross-sectional view illustrating a cooling structure in the power converter according to the second embodiment;
  • FIG. 13 is a schematic cross-sectional view illustrating a cooling structure in a power converter according to a third embodiment;
  • FIG. 3 is a plan view showing the periphery of the cooler, It is a diagram showing a flow path of the cooler, FIG.
  • FIG. 54 is a cross-sectional view of FIG. 53 taken along the line LVI-LVI.
  • FIG. 54 is a cross-sectional view of FIG. 53 taken along the line LV-LV, It is a diagram showing another example of the flow path, It is a diagram showing another example of the flow path, It is sectional drawing which shows another example of a heating element.
  • the thickness direction of the heat exchange part 233 of the cooler 230 is orthogonal to the Z direction, and the direction in which the plurality of power modules 110 are arranged is the X direction.
  • a direction orthogonal to both the Z direction and the X direction is referred to as a Y direction.
  • the shape along the XY plane defined by the X and Y directions is a planar shape.
  • the power converter of the present embodiment is applicable to vehicles such as an electric vehicle (EV) and a hybrid vehicle (HV).
  • EV electric vehicle
  • HV hybrid vehicle
  • EV electric vehicle
  • HV hybrid vehicle
  • the vehicle drive system 1 includes a DC power supply 2, motor generators 3 and 4, and a power conversion device 5 that performs power conversion between the DC power supply 2 and the motor generators 3 and 4. I have.
  • the DC power supply 2 is a chargeable / dischargeable secondary battery such as a lithium ion battery or a nickel hydride battery.
  • Motor generators 3 and 4 are three-phase AC type rotating electric machines.
  • the motor generator 3 functions as a generator (alternator) that is driven by an engine (not shown) to generate power and a motor (starter) that starts the engine.
  • the motor generator 4 functions as a traveling drive source of the vehicle, that is, an electric motor. Also, it functions as a generator during regeneration.
  • the vehicle includes an engine and a motor generator 4 as a traveling drive source.
  • the power converter 5 includes a converter 6, inverters 7, 8, a control circuit 9, a smoothing capacitor C2, a filter capacitor C3, and the like.
  • the converter 6 and the inverters 7 and 8 are power conversion units.
  • Converter 6 is a DC-DC converter for converting a DC voltage to a DC voltage having a different value
  • inverters 7 and 8 are DC-AC converters.
  • These power converters each include an upper and lower arm circuit 10 and a parallel circuit 11 having a capacitor C1.
  • the upper and lower arm circuit 10 has switching elements Q1 and Q2 and diodes D1 and D2.
  • n-channel IGBTs are used as the switching elements Q1 and Q2.
  • the upper arm 10U includes a switching element Q1 and a reflux diode D1 connected in anti-parallel.
  • the lower arm 10L includes a switching element Q2 and a reflux diode D2 connected in anti-parallel.
  • switching elements Q1 and Q2 are not limited to IGBTs.
  • a MOSFET can be employed. Parasitic diodes can be used as the diodes D1 and D2.
  • the upper arm 10U and the lower arm 10L are connected in series between the VH line and the N line 13 with the upper arm 10U being on the VH line 12H side.
  • the P line 12, which is a power line on the high potential side, has a VL line 12L in addition to the VH line 12H.
  • the VL line 12L is connected to the positive terminal of the DC power supply 2.
  • the converter 6 is provided between the VL line 12L and the VH line 12H, and the potential of the VH line 12H is equal to or higher than the potential of the VL line 12L.
  • N line 13 is connected to the negative electrode of DC power supply 2 and is also called a ground line.
  • the upper arm 10U and the lower arm 10L are connected in series between the power lines, and the upper and lower arm circuit 10 is configured.
  • a semiconductor device 20 described later constitutes one arm.
  • the collector of the switching element Q1 is connected to the VH line 12H, and the emitter of the switching element Q2 is connected to the N line 13.
  • the emitter electrode of switching element Q1 and the collector electrode of switching element Q2 are connected.
  • the positive electrode terminal of the capacitor C1 is connected to the collector electrode of the switching element Q1 constituting the upper arm 10U.
  • the negative terminal of the capacitor C1 is connected to the emitter electrode of the switching element Q2 forming the lower arm 10L. That is, the capacitor C1 is connected in parallel to the corresponding upper and lower arm circuits 10.
  • the parallel circuit 11 includes an upper and lower arm circuit 10 and a capacitor C1 connected in parallel.
  • the parallel circuit 11 has common wirings 11P and 11N.
  • the connection point between the upper arm 10U and the positive terminal of the capacitor C1 is connected to the VH line 12H via the common wiring 11P.
  • the connection point between the lower arm 10L and the negative terminal of the capacitor C1 is connected to the N line 13 via the common wiring 11N.
  • a capacitor C1 is provided separately from the smoothing capacitor C2 and the filter capacitor C3.
  • the capacitor C1 only has to have a function of supplying necessary electric charges when switching the switching elements Q1 and Q2 constituting the upper and lower arm circuits 10 connected in parallel. Energy loss (loss) occurs due to switching, and the voltage between both ends of the upper and lower arms drops, so that insufficient charge is supplied from the capacitor C1 connected in parallel.
  • the capacitance of the capacitor C1 is set to a value sufficiently smaller than the capacitance of the smoothing capacitor C2 and the filter capacitor C3.
  • the capacitance of the smoothing capacitor C2 is 1000 ⁇ F
  • the capacitance of the capacitor C1 is 10 ⁇ F to 20 ⁇ F.
  • a power module 110 described later forms one parallel circuit 11.
  • the filter capacitor C3 is connected between the VL line 12L and the N line 13.
  • the filter capacitor C3 is connected in parallel to the DC power supply 2.
  • Filter capacitor C3 removes power supply noise from DC power supply 2, for example.
  • the filter capacitor C3 is arranged on a lower voltage side than the smoothing capacitor C2, and thus is also referred to as a low voltage side capacitor.
  • a system main relay (SMR), not shown, is provided between the DC power supply 2 and the filter capacitor C3 on at least one of the N line 13 and the VL line 12L.
  • the converter 6 has the parallel circuit 11 and the reactor.
  • the converter 6 of the present embodiment is configured as a multi-phase converter, specifically, a two-phase converter.
  • Converter 6 has two sets of parallel circuits 11 and reactors R1 and R2 provided for each parallel circuit 11.
  • the parallel circuit 11 is connected in parallel between the VH line 12H and the N line 13.
  • Reactors R1 and R2 have one end connected to VL line 12L and the other end connected to a connection point of upper arm 10U and lower arm 10L in corresponding parallel circuit 11 via boost wiring 14 respectively. That is, the reactors R1 and R2 are arranged between the VL line 12L and the corresponding connection point of the upper and lower arm circuits 10. Reactors R1 and R2 are connected in parallel between VL line 12L and N line 13.
  • the converter 6 converts the DC voltage into a DC voltage having a different value according to the switching control by the control circuit unit 9.
  • Converter 6 has a function of boosting a DC voltage supplied from DC power supply 2. Further, it has a step-down function of charging the DC power supply 2 using the charge of the smoothing capacitor C2.
  • the smoothing capacitor C2 is connected between the VH line 12H and the N line 13.
  • the smoothing capacitor C2 is provided between the converter 6 and the inverters 7 and 8, and is connected in parallel with the converter 6 and the inverters 7 and 8.
  • Smoothing capacitor C2 smoothes the DC voltage boosted by converter 6, for example, and accumulates the charge of the DC voltage.
  • the voltage between both ends of the smoothing capacitor C2 becomes a DC high voltage for driving the motor generators 3, 4.
  • the voltage across the smoothing capacitor C2 is equal to or higher than the voltage across the filter capacitor C3.
  • the smoothing capacitor C2 is arranged on a higher voltage side than the filter capacitor C3, and thus is also referred to as a high voltage side capacitor.
  • the inverter 7 is connected to the converter 6 via the smoothing capacitor C2.
  • the inverter 7 has three sets of parallel circuits 11. That is, the inverter 7 has the upper and lower arm circuits 10 for three phases.
  • a connection point of the U-phase upper and lower arm circuits 10 is connected to a U-phase winding provided on a stator of the motor generator 3.
  • the connection point of the V-phase upper and lower arm circuits 10 is connected to the V-phase winding of the motor generator 3.
  • the connection point of the W-phase upper and lower arm circuits 10 is connected to the W-phase winding of the motor generator 3.
  • the connection point of the upper and lower arm circuits 10 of each phase is connected to the winding of the corresponding phase via the output wiring 15 provided for each phase.
  • the inverter 7 converts the DC voltage into a three-phase AC voltage according to the switching control by the control circuit unit 9 and outputs the three-phase AC voltage to the motor generator 3. Thereby, motor generator 3 is driven to generate a predetermined torque.
  • the inverter 7 can also convert the three-phase AC voltage generated by the motor generator 3 in response to the output of the engine into a DC voltage according to switching control by the control circuit unit 9 and output the DC voltage to the VH line 12H.
  • inverter 7 performs bidirectional power conversion between converter 6 and motor generator 3.
  • the inverter 8 is connected to the converter 6 via the smoothing capacitor C2.
  • the inverter 8 also has three sets of the parallel circuits 11. That is, the inverter 8 includes the upper and lower arm circuits 10 for three phases.
  • a connection point of the U-phase upper and lower arm circuits 10 is connected to a U-phase winding provided on a stator of the motor generator 4.
  • the connection point of the V-phase upper and lower arm circuits 10 is connected to the V-phase winding of the motor generator 4.
  • the connection point of the W-phase upper and lower arm circuits 10 is connected to the W-phase winding of the motor generator 4.
  • the connection point of the upper and lower arm circuits 10 of each phase is connected to the winding of the corresponding phase via the output wiring 15 provided for each phase.
  • the inverter 8 converts a DC voltage into a three-phase AC voltage according to the switching control by the control circuit unit 9 and outputs the three-phase AC voltage to the motor generator 4. Thereby, motor generator 3 is driven to generate a predetermined torque.
  • the inverter 8 converts the three-phase AC voltage generated by the motor generator 4 by receiving the rotational force from the wheels into a DC voltage according to switching control by the control circuit unit 9, and the VH line 12 ⁇ / b> H Can also be output to Thus, inverter 8 performs bidirectional power conversion between converter 6 and motor generator 4.
  • the control circuit unit 9 generates a drive command for operating the switching elements of the inverters 7 and 8, and outputs the drive command to a drive circuit unit (driver) (not shown).
  • the control circuit unit 9 generates a drive command based on a torque request input from a host ECU (not shown) and signals detected by various sensors.
  • the various sensors include a current sensor that detects a phase current flowing through each phase winding of the motor generators 3, 4, a rotation angle sensor that detects the rotation angle of the rotor of the motor generators 3, 4, and a voltage across the smoothing capacitor C2. That is, a voltage sensor that detects the voltage of the VH line 12H, a voltage sensor that detects the voltage across the filter capacitor C3, that is, a voltage sensor that detects the voltage of the VL line 12L, and a current that is provided on the booster wiring 14 and detects the current flowing through the reactors R1 and R2. There are sensors and so on.
  • the power conversion device 5 has these sensors (not shown).
  • the control circuit unit 9 specifically outputs a PWM signal as a drive command.
  • the control circuit unit 9 includes, for example, a microcomputer (microcomputer).
  • the drive circuit unit generates a drive signal based on a drive command from the control circuit unit 9 and outputs the drive signal to the gate electrodes of the corresponding switching elements Q1 and Q2 of the upper and lower arm circuits 10. Thereby, the switching elements Q1 and Q2 are driven, that is, turned on and turned off.
  • a drive circuit section is provided for each of the upper and lower arm circuits 10.
  • the semiconductor device 20 which is a component thereof, and the power module 110 including the semiconductor device 20, will be described.
  • the semiconductor device 20 described below is configured to constitute one of the upper and lower arm circuits 10, that is, one arm. That is, the upper and lower arm circuit 10 is configured by the two semiconductor devices. Since such a semiconductor device 20 is packaged in units of elements constituting one arm, it is also called a 1-in-1 package.
  • the semiconductor device 20 has the same basic configuration between the upper arm 10U and the lower arm 10L, and may be, for example, common components.
  • the semiconductor device 20 includes a sealing resin body 30, a semiconductor chip 40, a conductive member 50, a terminal 60, a main terminal 70, and a signal terminal 80.
  • FIG. 5 is a view in which the sealing resin body 30 is omitted from FIG.
  • FIG. 6 shows a state after the molding of the sealing resin body 30 and before removing an unnecessary portion of the lead frame 100 such as a tie bar.
  • FIG. 7 is a plan view showing the positional relationship between the semiconductor chip 40 and the main terminals 70, and omits a part of the sealing resin body 30, the conductive member 50E, and the terminals 60.
  • the thickness direction of the semiconductor chip 40 is substantially parallel to the Z direction which is the thickness direction of the heat exchange part 233 of the cooler 230.
  • the arrangement direction of the plurality of main terminals 70 and the arrangement direction of the plurality of signal terminals 80 are substantially parallel to the X direction, which is the arrangement direction of the plurality of power modules 110. Therefore, also in the following description, the thickness direction of the semiconductor chip 40 is referred to as the Z direction, and the arrangement direction of the main terminals 70 and the signal terminals 80 is referred to as the X direction.
  • the sealing resin body 30 is made of, for example, an epoxy resin.
  • the sealing resin body 30 is formed by, for example, a transfer molding method. As shown in FIGS. 2 to 4, the sealing resin body 30 has one surface 31 and a back surface 32 opposite to the one surface 31 in the Z direction parallel to the thickness direction of the semiconductor chip 40.
  • the one surface 31 and the back surface 32 are, for example, flat surfaces.
  • the sealing resin body 30 has a side surface connecting the one surface 31 and the back surface 32. In this example, the sealing resin body 30 has a substantially rectangular planar shape.
  • the semiconductor chip 40 is formed by forming an element on a semiconductor substrate such as Si, SiC, and GaN.
  • the semiconductor device 20 has one semiconductor chip 40.
  • elements (switching elements and diodes) forming one arm are formed on the semiconductor chip 40. That is, RC (Reverse Conducting) -IGBT is formed as an element.
  • RC Reverse Conducting
  • the element formed on the semiconductor chip 40 functions as the switching element Q1 and the diode D1
  • the element formed on the semiconductor chip 40 serves as the switching element Q2 and the diode D2. Function.
  • the element has a vertical structure such that a main current flows in the Z direction.
  • the element has a gate electrode.
  • the gate electrode has a trench structure.
  • the semiconductor chip 40 has main electrodes on both surfaces in the Z direction. Specifically, a collector electrode 41 is provided as a main electrode on one surface side, and an emitter electrode 42 is provided as a main electrode on the back surface opposite to the one surface.
  • the collector electrode 41 also serves as a cathode electrode of the diode, and the emitter electrode 42 also serves as an anode electrode of the diode.
  • the collector electrode 41 is formed on almost one entire surface.
  • the emitter electrode 42 is formed on a part of the back surface.
  • the semiconductor chip 40 has a pad 43 which is a signal electrode on the back surface on which the emitter electrode 42 is formed.
  • the pad 43 is formed at a position different from the position of the emitter electrode 42.
  • the pad 43 is electrically separated from the emitter electrode 42.
  • the pad 43 is formed at the end opposite to the region where the emitter electrode 42 is formed in the Y direction.
  • the semiconductor chip 40 has five pads 43.
  • five pads 43 are used for a gate electrode, for a Kelvin emitter for detecting the potential of the emitter electrode 42, for current sensing, and for an anode potential of a temperature sensor (temperature sensing diode) for detecting the temperature of the semiconductor chip 40.
  • a temperature sensor temperature sensing diode
  • the five pads 43 are formed collectively on one end side in the Y direction and are arranged in the X direction on the semiconductor chip 40 having a substantially rectangular planar shape.
  • the conductive member 50 electrically relays the semiconductor chip 40 and the main terminal 70. That is, it functions as a wiring for the main electrode. In the present example, a function of radiating the heat of the semiconductor chip 40 (element) to the outside of the semiconductor device 20 is also achieved. For this reason, the conductive member 50 is also called a heat sink.
  • the conductive member 50 is formed using at least a metal material such as Cu in order to secure electrical conductivity and thermal conductivity.
  • the conductive members 50 are provided in pairs so as to sandwich the semiconductor chip 40. Each of the conductive members 50 is provided so as to include the semiconductor chip 40 in a projection view from the Z direction.
  • the semiconductor device 20 has, as a pair of conductive members 50, a conductive member 50C disposed on the collector electrode 41 side of the semiconductor chip 40 and a conductive member 50E disposed on the emitter electrode 42 side.
  • the conductive member 50C electrically relays the collector electrode 41 to a main terminal 70C described later
  • the conductive member 50E electrically relays the emitter electrode 42 to a main terminal 70E described later.
  • the conductive member 50 ⁇ / b> C has a main body 51 ⁇ / b> C that is a thick part in the Z direction and an extended part 52 ⁇ / b> C that is a thinner part than the main part 51 ⁇ / b> C. ing.
  • the main body 51C has a substantially planar shape with a substantially constant thickness.
  • the main body 51C has a mounting surface 53C on the semiconductor chip 40 side and a heat radiation surface 54C opposite to the mounting surface 53C in the Z direction.
  • the extending portion 52C extends from an end of the main body 51C in the Y direction.
  • the extending portion 52C extends in the Y direction with the same length in the X direction, that is, the same width as the main body portion 51C.
  • the surface of the extension portion 52C on the semiconductor chip 40 side is substantially flush with the mounting surface 53C of the main body portion 51C, and the surface opposite to the semiconductor chip 40 is sealed with the sealing resin body 30.
  • the extended portion 52C may be provided at least at the end on the side where the main terminal 70 is arranged. In this example, they are provided at both ends of the main body 51C. In FIG. 7, the boundary between the main body 51C and the extension 52C is indicated by a two-dot chain line.
  • the conductive member 50E has a main body 51E that is a thicker portion in the Z direction and an extended portion 52E that is a thinner portion than the main body 51E.
  • the main body 51E has a substantially planar shape with a substantially constant thickness.
  • the main body 51E has a mounting surface 53E on the semiconductor chip 40 side and a heat radiation surface 54E opposite to the mounting surface 53E in the Z direction.
  • the extending portion 52E extends from an end of the main body 51E in the Y direction.
  • the extending portion 52E extends in the Y direction with the same length in the X direction, that is, the same width as the main body portion 51E.
  • the surface of the extension portion 52E on the semiconductor chip 40 side is substantially flush with the mounting surface 53E of the main body portion 51E, and the surface opposite to the semiconductor chip 40 is sealed with the sealing resin body 30.
  • the extended portion 52E may be provided at least at the end on the side where the main terminal 70 is disposed. In this example, they are provided at both ends of the main body 51E. In this example, common components are used as the conductive members 50C and 50E.
  • the collector electrode 41 of the semiconductor chip 40 is connected to the mounting surface 53C of the main body 51C of the conductive member 50C via the solder 90.
  • the connection method is not limited to solder joining.
  • Most of the conductive member 50C is covered with the sealing resin body 30.
  • the heat radiation surface 54C of the conductive member 50C is exposed from the sealing resin body 30.
  • the heat radiation surface 54C is substantially flush with the surface 31.
  • a portion of the surface of the conductive member 50 ⁇ / b> C other than a portion connected to the solder 90, the radiating surface 54 ⁇ / b> C, and a portion connected to the main terminal 70 is covered with the sealing resin body 30.
  • the terminal 60 is interposed between the semiconductor chip 40 and the conductive member 50E.
  • the terminal 60 has a substantially rectangular parallelepiped shape, and its planar shape (planar rectangular shape) substantially matches the emitter electrode 42. Since the terminal 60 is located in the middle of the electric conduction and heat conduction paths between the emitter electrode 42 of the semiconductor chip 40 and the conductive member 50E, at least a metal material such as Cu is used in order to secure electric conductivity and heat conductivity. It is formed.
  • the terminal 60 is disposed to face the emitter electrode 42 and is connected to the emitter electrode 42 via the solder 91.
  • the connection method is not particularly limited to solder joining.
  • the terminal 60 may be configured as a part of a lead frame 100 described later.
  • the emitter electrode 42 of the semiconductor chip 40 is electrically connected to the mounting surface 53E of the main body 51E of the conductive member 50E via the solder 92. Specifically, the conductive member 50E and the terminal 60 are connected via the solder 92. The emitter electrode 42 and the conductive member 50E are electrically connected via the solder 91, the terminal 60, and the solder 92. Most of the conductive member 50E is also covered with the sealing resin body 30. The heat dissipation surface 54E of the conductive member 50E is exposed from the sealing resin body 30. The heat radiation surface 54E is substantially flush with the back surface 32. A portion of the surface of the conductive member 50E other than a portion connected to the solder 92, the heat radiation surface 54E, and a portion where the main terminal 70 is continuous is covered with the sealing resin body 30.
  • the main terminal 70 is a terminal through which a main current flows among external connection terminals for electrically connecting the semiconductor device 20 and an external device.
  • the semiconductor device 20 has a plurality of main terminals 70.
  • the main terminals 70 are connected to the corresponding conductive members 50.
  • the main terminal 70 may be provided integrally with the corresponding conductive member 50, or the main terminal 70, which is another member, may be connected to the conductive member 50 by connection.
  • the main terminal 70 is configured as a part of the lead frame 100 together with the signal terminal 80, and is a separate member from the conductive member 50.
  • the main terminals 70 are connected to the corresponding conductive members 50 inside the sealing resin body 30.
  • each of the main terminals 70 extends from the corresponding conductive member 50 in the Y direction, and protrudes outside from one side surface 33 of the sealing resin body 30.
  • the main terminal 70 extends over the inside and outside of the sealing resin body 30.
  • the main terminal 70 is a terminal that is electrically connected to a main electrode of the semiconductor chip 40.
  • the semiconductor device 20 has, as the main terminals 70, a main terminal 70C electrically connected to the collector electrode 41 and a main terminal 70E electrically connected to the emitter electrode 42.
  • the main terminal 70C is also called a collector terminal
  • the main terminal 70E is also called an emitter terminal.
  • the main terminal 70C is connected to the conductive member 50C. Specifically, one of the extending portions 52C is connected to the surface on the semiconductor chip 40 side via a solder 93.
  • the connection method is not particularly limited to solder joining.
  • the main terminal 70C extends in the Y direction from the conductive member 50C, and protrudes outside from the side surface 33 of the sealing resin body 30.
  • the main terminal 70E is connected to the conductive member 50E. Specifically, one of the extending portions 52E is connected to the surface on the semiconductor chip 40 side via a solder 94.
  • the connection method is not particularly limited to solder joining.
  • the main terminal 70E extends from the conductive member 50E in the Y direction, which is the same direction as the main terminal 70C, and protrudes outward from the same side surface 33 as the main terminal 70C, as shown in FIGS. Details of the main terminals 70C and 70E will be described later.
  • the signal terminals 80 are connected to the pads 43 of the corresponding semiconductor chip 40.
  • the semiconductor device 20 has a plurality of signal terminals 80. In this example, they are connected via bonding wires 95.
  • the signal terminal 80 is connected to the bonding wire 95 inside the sealing resin body 30.
  • the five signal terminals 80 connected to the respective pads 43 extend in the Y direction, and protrude outward from the side surface 34 of the sealing resin body 30 opposite to the side surface 33.
  • the signal terminal 80 is configured as a part of the lead frame 100.
  • the signal terminal 80 may be provided integrally with the conductive member 50C together with the main terminal 70C by processing the same metal member.
  • the lead frame 100 has an outer peripheral frame portion 101 and a tie bar 102 before cutting as shown in FIG.
  • Each of the main terminal 70 and the signal terminal 80 is fixed to the outer frame 101 via a tie bar 102.
  • unnecessary portions of the lead frame 100 such as the outer peripheral frame portion 101 and the tie bar 102, are removed, whereby the main terminals 70 and the signal terminals 80 are electrically separated, and the semiconductor device 20 is obtained.
  • the lead frame 100 any of those having a constant thickness and those having different thicknesses can be used.
  • the sealing resin body 30 causes the semiconductor chip 40, a part of the conductive member 50, a part of the terminal 60, a part of the main terminal 70, and a part of the signal terminal 80. Are integrally sealed. That is, the elements constituting one arm are sealed. For this reason, the semiconductor device 20 is also called a 1-in-1 package.
  • the heat radiation surface 54C of the conductive member 50C is substantially flush with the one surface 31 of the sealing resin body 30.
  • the heat dissipation surface 54E of the conductive member 50E is substantially flush with the back surface 32 of the sealing resin body 30.
  • the semiconductor device 20 has a double-sided heat dissipation structure in which the heat dissipation surfaces 54C and 54E are both exposed from the sealing resin body 30.
  • Such a semiconductor device 20 can be formed, for example, by cutting the conductive member 50 together with the sealing resin body 30.
  • the sealing resin body 30 may be formed by molding the sealing resin body 30 such that the heat radiation surfaces 54C and 54E are in contact with the cavity wall surface of the mold for molding the sealing resin body 30.
  • the main terminal 70 has a plurality of at least one of the main terminals 70C and 70E.
  • the main terminal 70C and the main terminal 70E are arranged side by side in the X direction, which is the plate width direction of the main terminal 70, so that the side surfaces of the main terminal 70C do not face each other.
  • the semiconductor device 20 has a plurality of side facing portions formed by adjacent main terminals 70C and 70E.
  • the plate surface is a surface of the main terminal 70 in the thickness direction of the main terminal 70, and the side surface is a surface connecting the plate surfaces and is a surface along the extending direction of the main terminal 70.
  • the remaining surfaces of the main terminal 70 are both end surfaces in the extending direction, that is, a protruding front end surface and a rear end surface.
  • the side surface forming the side surface facing portion faces the main terminal 70 in the plate thickness direction.
  • it may be provided shifted in the thickness direction.
  • facing the entire surface is more effective.
  • opposing means that the opposing surfaces are at least facing each other.
  • the surfaces are preferably substantially parallel, and a completely parallel state is more preferable.
  • the side surface of the main terminal 70 is a surface having a smaller area than the plate surface.
  • the main terminals 70C and 70E are arranged so as to be adjacent to each other. By being adjacent to each other, in a configuration having a plurality of main terminals 70C and 70E, the main terminals 70C and the main terminals 70E are alternately arranged. The main terminals 70C and 70E are arranged in order.
  • a main terminal group 71 is constituted by three or more main terminals 70 arranged continuously in the X direction.
  • the main terminals 70C and 70E are arranged adjacent to each other, and the main terminal group 71 includes both the main terminals 70C and 70E and includes at least one of the main terminals 70C and 70E.
  • At least a part of each of the main terminals 70 constituting the main terminal group 71 is arranged in a predetermined area A1.
  • the region A1 is between the extension line EL1 virtually extended from one end face 44 of the semiconductor chip 40 and the extension line EL2 virtually extended from the end face 45 opposite to the end face 44 in the X direction. Area.
  • the length between the extension lines EL1 and EL2 matches the width of the semiconductor chip 40, that is, the element width.
  • the main terminals 70C and 70E extend in the same direction (Y direction) over their entire lengths.
  • the main terminal 70 has a planar straight line shape and does not have a portion extending in the X direction.
  • the thickness of the main terminal 70C is smaller than that of the main body 51C, and is substantially the same as the extension 52C, for example.
  • the thickness of the main terminal 70E is smaller than that of the main body 51E, and is substantially the same as the extension 52E, for example.
  • the thickness of the main terminal 70 is substantially constant over the entire length, and the main terminals 70C and 70E have substantially the same thickness.
  • the width W1 of the main terminal 70 is substantially constant over its entire length, and is the same for the main terminals 70C and 70E.
  • the interval P1 between the main terminals 70 adjacent in the X direction is the same for all the main terminals 70.
  • the interval P1 is also called a terminal pitch.
  • Each of the main terminals 70 has two bent portions in the sealing resin body 30.
  • the main terminal 70 has a substantially crank shape on the ZY plane.
  • a portion at the tip end than the bent portion has a flat plate shape, and a part of the flat plate portion protrudes from the sealing resin body 30.
  • the main terminals 70C and 70E are arranged at substantially the same position in the Z direction at the protruding portion from the sealing resin body 30, that is, at the plate-like portion, as shown in FIGS.
  • the thickness direction of the main terminals 70C and 70E substantially coincides with the Z direction.
  • the side surface of the main terminal 70C and the side surface of the main terminal 70E face each other in almost the entire area in the Z direction.
  • extension lengths of the plate-shaped portions of the main terminals 70C and 70E are substantially the same, and are disposed at substantially the same position in the Y direction. As a result, the side surfaces of the main terminals 70C and 70E are almost entirely opposed in the flat plate portion.
  • the semiconductor device 20 includes an odd number of main terminals 70, specifically, nine main terminals 70. Of these, four are the main terminals 70C, and the remaining five are the main terminals 70E.
  • the main terminals 70C and 70E are alternately arranged in the X direction, so that the semiconductor device 20 has eight side facing portions.
  • Main terminals 70E are arranged at both ends in the X direction, and a main terminal group 71 is constituted by seven main terminals 70 excluding the main terminals 70E at both ends.
  • the main terminal group 71 is composed of an odd number (seven) of main terminals 70, specifically, four main terminals 70C and three main terminals 70E.
  • the two main terminals 70E, which do not constitute the main terminal group 71, are all disposed outside the region A in the X direction.
  • the number of main terminals 70 constituting the main terminal group 71 is larger than the number of main terminals 70 not constituting the main terminal group 71.
  • the two main terminals 70C located at both ends are partially arranged in the area A1 in the X direction.
  • the remaining five main terminals 70 are all arranged in the area A1 in the X direction.
  • some of the main terminals 70 constituting the main terminal group 71 are entirely disposed in the region A1, and some of the remaining main terminals 70 are partially disposed in the region A1.
  • the entirety of each of the plurality (five) of the main terminals 70 constituting the main terminal group 71 is arranged in the area A1.
  • the main terminals 70C and 70E have the same width W1, and the interval P1 between the main terminals 70C and 70E is the same for all the main terminals 70.
  • the center of the width of the main terminal 70 ⁇ / b> E arranged in the middle (center) in the X direction among the odd number of main terminals 70 is located on the center line CL passing through the center of the semiconductor chip 40.
  • the main terminals 70C and 70E are arranged symmetrically with respect to the center line CL passing through the center of the semiconductor chip 40 in the X direction.
  • the plurality of main terminals 70C are arranged symmetrically with respect to the center line CL, and the plurality of main terminals 70E are arranged symmetrically with respect to the center line CL.
  • the odd number of main terminals 70 constituting the main terminal group 71 are also arranged in line symmetry with respect to the center line CL.
  • the extending direction of the center line CL is orthogonal to the Z direction and the X direction.
  • the semiconductor device 20 has at least one of the main terminals 70C and 70E, and the main terminals 70C and 70E are arranged adjacent to each other in the X direction. The side surfaces of the adjacent main terminals 70C and 70E are opposed to each other. The direction of the main current is reversed in the main terminals 70C and 70E. As described above, the main terminals 70C and 70E are arranged so as to cancel each other out of the magnetic flux generated when the main current flows. Therefore, the inductance can be reduced. In particular, in this example, since there are a plurality of side facing portions of the main terminals 70C and 70E, the inductance can be effectively reduced. Since a plurality of main terminals 70 of the same type are used in parallel, the inductance can be reduced.
  • a main terminal group 71 is constituted by at least three main terminals 70 arranged continuously. At least a part of each of the main terminals 70 constituting the main terminal group 71 is disposed in a region A1 between extension lines EL1 and EL2 extending from both end surfaces 44 and 45 of the semiconductor chip 40 in the X direction. I have. That is, a plurality of side facing parts are arranged in area A1. Thereby, the current path between the main terminal 70 of the main terminal group 71 and the main electrode of the semiconductor chip 40 can be simplified, specifically, the current path can be shortened. Therefore, the inductance can be reduced.
  • the inductance of the main circuit wiring can be reduced as compared with the related art.
  • a plurality of main terminals 70 are arranged side by side in the X direction so that the side surfaces face each other, have at least one of the main terminals 70C and 70E, and have at least three main terminals 70 arranged continuously.
  • the main terminal group 71 may be configured, and the main terminals 70 of the same type may be arranged continuously in a part. According to this, since at least one of the main terminals 70C and 70E is provided in a plurality and parallelized, the inductance can be reduced.
  • the inductance can be reduced. Therefore, effects equivalent to the present example can be obtained.
  • the inductance can be further reduced by the effect of canceling the magnetic flux.
  • the main terminals 70 arranged entirely in the area A1 in the X direction are more preferable than the main terminals 70 partially arranged in the area A1 in terms of simplifying the current path. .
  • the whole of each of the main terminals 70 constituting the main terminal group 71 is arranged in the area A1, and the other of the remaining main terminals 70 is partially arranged in the area A1. Since the main terminal group 71 includes the main terminal 70 which is more effective in simplifying the current path, the inductance can be effectively reduced.
  • the main terminal 70 includes a plurality of main terminals 70 which are entirely disposed in the region. Since the plurality of main terminals 70 are more effective in simplifying the current path, the inductance can be reduced more effectively.
  • the number of main terminals 70 is odd. In the case of an odd number, symmetry is easily provided in the X direction, and the bias of the current path between the main terminal 70 and the semiconductor chip 40 can be suppressed.
  • the order in which the main terminals 70 are arranged in the X direction is the same whether viewed from the one surface 31 side or the rear surface 32 side. Therefore, the degree of freedom of the arrangement of the semiconductor device 20 can be improved.
  • the main terminals 70C and 70E are arranged symmetrically with respect to the center line CL of the semiconductor chip 40 in the X direction. Accordingly, the main current of the semiconductor chip 40 flows so as to be line-symmetric with respect to the center line CL. The main current flows almost equally on the left and right of the center line CL. Therefore, the inductance can be further reduced. In addition, local heat generation can be suppressed.
  • FIGS. 8 to 10 show another example. 8 to 10, the sealing resin body 30 and the signal terminals 80 are omitted for convenience. 8 to 10, for convenience, the illustration of the area A1 is omitted, and extension lines EL1 and EL2 that define the area A1 are shown.
  • the semiconductor device 20 includes three main terminals 70, specifically, one main terminal 70C and two main terminals 70E. That is, it has two side facing portions.
  • a main terminal group 71 is constituted by all the main terminals 70.
  • the main terminal 70C disposed in the middle is entirely disposed in the region A1 in the X direction, and the main terminals 70E at both ends are partially disposed in the region A1.
  • the semiconductor device 20 includes five main terminals 70, specifically, two main terminals 70C and three main terminals 70E. That is, it has four side facing parts.
  • a main terminal group 71 is constituted by all the main terminals 70.
  • the main terminals 70E at both ends are partially arranged in the area A1, and the remaining three main terminals 70 are entirely arranged in the area A1.
  • the semiconductor device 20 includes seven main terminals 70, specifically, three main terminals 70C and four main terminals 70E. That is, it has six side facing portions.
  • a main terminal group 71 is constituted by all the main terminals 70.
  • the main terminals 70E at both ends are partially disposed in the region A1, and the remaining five main terminals 70 are entirely disposed in the region A1.
  • FIG. 11 shows the result of a magnetic field analysis of the total inductance of the main terminals provided in the semiconductor device 20.
  • the length (width) of the conductive member 50 in the X direction was 17 mm
  • the interval P1 between the main terminals 70 was 1.0 mm.
  • the widths W1 of the main terminals 70 of the same semiconductor device 20 are equal to each other.
  • FIG. 11 shows a configuration (two terminals) having only two main terminals as a comparative example.
  • Nine terminals are the result of the same arrangement as the configuration shown in FIG.
  • three terminals, five terminals, and seven terminals are the result of the same arrangement as the configuration shown in FIGS.
  • the main terminal group 71 is configured by all the main terminals 70 of the three terminals, the five terminals, and the seven terminals. That is, all the main terminals 70 are arranged in the area A1. As shown in FIG. 7, the nine terminals constitute a main terminal group 71 with seven main terminals 70.
  • the provision of the main terminal group 71 including three or more main terminals 70 can reduce the total inductance of the main terminals as compared with the comparative example while suppressing an increase in physique. is there. With three or more terminals, it is considered that the effect of the inductance reduction exceeds the inductance increase due to the width reduction, and the inductance is reduced.
  • the configuration having the main terminal group 71 composed of five or more main terminals 70 can reduce the inductance by half or less as compared with the comparative example, that is, it is effective in reducing the inductance.
  • the nine terminals include seven main terminals 70 constituting the main terminal group 71 and two main terminals 70 arranged outside the area A1. Although the two main terminals 70 are outside the area A1 as described above, more main terminals 70 than the main terminals 70 that do not form the main terminal group 71, that is, most of the main terminals 70 are arranged in the area A1. ing. Also, the number of side facing portions is two more than the seven terminals. Therefore, the inductance is lower than that of the seven terminals.
  • the configuration in which the main terminals 70E are disposed at both ends that is, the configuration in which the number of the main terminals 70E is larger than the number of the main terminals 70C is described.
  • the present invention is not limited to this.
  • the number of the main terminals 70C may be larger than that of the main terminals 70E.
  • main terminal 70 In all the main terminals 70, the example in which the lengths of the protruding portions from the sealing resin body 30 are equal has been described.
  • the length of the protruding portion may be different between the adjacent main terminals 70C and 70E in consideration of the connectivity with the bus bar or the like.
  • the main terminal 70C is longer than the main terminal 70E.
  • the cross-sectional area of the main terminal 70C having a small number is made larger than the cross-sectional area of the main terminal 70E having a large number, so that the total impedance of the main terminals 70C and the total of the main terminals 70E substantially match. Let me. Therefore, heat generation of the main terminals 70C having a small number can be suppressed.
  • the cross-sectional area of the main terminal 70C is made larger than the cross-sectional area of the main terminal 70E by increasing the width, but the main terminal 70C may be made thicker than the main terminal 70E. Further, both the width and the thickness may be adjusted. In FIG.
  • FIGS. 12 and 13 show examples of seven terminals, but the present invention is not limited to this.
  • the present invention is not limited to this.
  • a configuration in which the side surfaces do not face each other at a part of the projecting portion may be adopted.
  • the protruding tip portion may be bent so that the protruding tip portion does not face each other. Even if the extension lengths are equal, connectivity with a bus bar or the like can be improved. However, the effect of inductance reduction decreases.
  • the main terminal group 71 may be constituted by an even number (four or more) of main terminals 70.
  • the semiconductor device 20 may include at least one semiconductor chip 40.
  • the above-described arrangement of the main terminals 70 may be applied to each semiconductor chip 40. .
  • the entirety of all the main terminals 70 constituting the main terminal group 71 may be arranged in the region A1.
  • a main terminal group 71 is configured by five main terminals 70 out of the seven main terminals 70.
  • the five main terminals 70 constituting the main terminal group 71 are all disposed in the area A1. According to this, the current path between the semiconductor chip 40 and the main electrode can be further simplified.
  • the main terminals 70 may have an even number (four or more).
  • the semiconductor device 20 includes two main terminals 70C and 70E.
  • the main terminals 70C and the main terminals 70E are alternately arranged.
  • the four main terminals 70 have the same width W1 and the same thickness. That is, the cross-sectional areas orthogonal to the extending direction are equal to each other. Further, the extension lengths in the Y direction are made equal to each other by the four main terminals 70.
  • a main terminal group 71 is configured by all the main terminals 70.
  • the two main terminals 70C and 70E arranged at both ends are partially arranged in the area A1 in the X direction.
  • the middle two main terminals 70C and 70E are all arranged in the area A1 in the X direction.
  • FIG. 11 also shows the results for four terminals. It is clear from the results of FIG. 11 that the total inductance of the main terminals can be reduced as compared with the comparative example while suppressing an increase in physique even in the case of four terminals.
  • the main terminal group 71 since the main terminal group 71 is formed by all the main terminals 70, the inductance can be effectively reduced.
  • the main terminal group 71 may be configured by three or more main terminals 70 arranged continuously. Therefore, in the configuration including the four main terminals 70, the main terminal group 71 may be configured by three and the remaining one may be disposed outside the region A1. As described above, when the number of the main terminals 70 is even, the main terminal group 71 may be configured by odd (three or more) main terminals 70.
  • the main terminals 70C and the main terminals 70E have the same number, so that the main currents flowing through the main terminals 70C and the main terminals 70E are equalized, thereby suppressing variation in heat generation. Can be.
  • the extension lengths of the main terminals 70C and 70E are equal and the cross-sectional areas are equal, whereby the impedance of the main terminal 70C and the impedance of the main terminal 70E are substantially equal. Therefore, the variation in heat generation can be effectively suppressed.
  • the even number is not limited to four. Four or more even numbers are sufficient.
  • a configuration including six main terminals 70 or a configuration including eight main terminals 70 may be employed.
  • the length of the protruding portion may be different between the adjacent main terminals 70C and 70E.
  • the cross-sectional area of the longer protruding portion may be larger than the cross-sectional area of the shorter protruding portion. Thereby, rigidity can be secured.
  • the impedance can be made uniform between the main terminal 70C and the main terminal 70E.
  • a configuration in which the side surfaces do not face each other at a part of the projecting portion may be adopted.
  • a connecting portion provided with at least one of the main terminals 70C and 70E may be further provided, and the connecting portion may connect the same main terminal to at least one of the main terminals 70C and 70E.
  • the semiconductor device 20 includes five main terminals 70, specifically, two main terminals 70C and three main terminals 70E.
  • the lead frame 100 has a connecting portion 96 for connecting the main terminals 70E to each other.
  • the protruding length of the main terminal 70E from the sealing resin body 30 is longer than that of the main terminal 70C, and the connecting portion 96 connects the protruding tip portion of the main terminal 70E.
  • the connecting portion 96 extends in the X direction, and is provided apart from the main terminal 70C in the Y direction.
  • the connecting portion 96 is arranged at the same position as the protruding portions of the main terminals 70C and 70E in the Z direction.
  • the connecting portion 96 when the main terminals 70 (main terminals 70E) having the same potential are connected by the connecting portion 96, the number of connection points with the bus bar or the like can be reduced. That is, the connectivity can be improved. In particular, in FIG. 16, a large number of main terminals 70E are connected. According to this, in the configuration in which the same lead frame 100 includes the main terminals 70C and 70E and the connecting portion 96, the number of connection points can be further reduced. Note that, instead of the main terminal 70E, the main terminal 70C may be connected by the connecting portion 96. The smaller one of the main terminals 70C and 70E may be connected. The number and arrangement of the main terminals 70 are not limited to the example shown in FIG.
  • the connecting portion 96 When the connecting portion 96 is provided on only one of the main terminals 70C and 70E, the connecting portion 96 may be provided on the same plane as the protrusion of the main terminals 70C and 70E. You may combine with the structure provided with the even-numbered main terminal 70.
  • the main terminals 70C and 70E may be connected to each other at a connection portion.
  • the conductive members 50C and 50E have the main bodies 51C and 51E, and do not have the extending parts 52C and 52E.
  • the conductive member 50C, the main terminal 70C, and the signal terminal 80 are configured on the same lead frame.
  • the conductive member 50E and the main terminal 70E are formed on a lead frame different from the lead frame including the main terminal 70C.
  • the main terminals 70C and 70E extend from the corresponding conductive members 50C and 50E.
  • FIG. 18 is a cross-sectional view of the semiconductor device 20 along XVIII-XVIII in FIG.
  • the connecting portion 96C is provided on the lead frame on the main terminal 70C side
  • the connecting portion 96E is provided on the lead frame on the main terminal 70E side.
  • the main terminals 70C are connected to each other at the protruding distal ends by the connecting portions 96C.
  • the main terminals 70E are connected to each other at the protruding tip portion by the connecting portion 96E.
  • the main terminals 70C and 70E have bent portions at the protruding portions, whereby the connecting portions 96C and 96E are separated from each other in the Z direction. That is, the connecting portions 96C and 96E are arranged at positions different from each other in the Z direction. Therefore, even if the extension length is the same, each of the main terminals 70C and 70E can be connected by the connecting portions 96C and 96E. And the number of connection points can be further reduced.
  • the semiconductor device 20 includes a plurality of semiconductor chips 40 connected to each other in parallel.
  • the semiconductor chip 40 includes a semiconductor chip 40a and a semiconductor chip 40b.
  • FIG. 19 is a cross-sectional view of the semiconductor device 20 corresponding to line XIX-XIX shown in FIG.
  • the collector electrodes 41 of the semiconductor chips 40a and 40b are connected to the mounting surface 53C of the same conductive member 50C.
  • the emitter electrodes 42 of the semiconductor chips 40a and 40b are connected to the mounting surface 53E of the same conductive member 50E via the individually arranged terminals 60.
  • the two semiconductor chips 40a and 40b have substantially the same planar shape, specifically, a substantially planar rectangular shape, and have substantially the same size and substantially the same thickness.
  • the semiconductor chips 40a and 40b are located at substantially the same height in the Z direction and are arranged side by side in the X direction.
  • a main terminal group 72 is constituted by two or more main terminals 70 arranged continuously in the X direction.
  • the semiconductor device 20 has a main terminal group 72a corresponding to the semiconductor chip 40a and a main terminal group 72b corresponding to the semiconductor chip 40b as the main terminal group 72.
  • At least a part of each of the main terminals 70 constituting the main terminal group 72a is disposed in an area A1a between extension lines EL1a and EL2a extending from both end surfaces 44a and 45a of the semiconductor chip 40a in the X direction.
  • each of the main terminals 70 constituting the main terminal group 72b is disposed in a region A1b between the extension lines EL1b and EL2b extending from both end surfaces 44b and 45b of the semiconductor chip 40b in the X direction. I have.
  • the semiconductor device 20 includes five main terminals 70. Specifically, it has two main terminals 70C and three main terminals 70E. The width W1 and the thickness of the main terminals 70 are equal to each other, and the intervals P1 are all equal. Then, the middle main terminal 70E is arranged outside the regions A1a and A1b.
  • a main terminal group 72a is constituted by two main terminals 70C and 70E arranged on the semiconductor chip 40a side with respect to the center main terminal 70E in the X direction, and is arranged on the semiconductor chip 40b side with respect to the center main terminal 70E.
  • a main terminal group 72b is configured by the two main terminals 70C and 70E.
  • the entire main terminals 70C and 70E constituting the main terminal group 72a are arranged in the region A1a.
  • the entire main terminals 70C and 70E constituting the main terminal group 72b are arranged in the region A1b.
  • the five main terminals 70 are arranged in line symmetry with respect to a center line CLm passing through the elemental centers of the two semiconductor chips 40.
  • the elemental center is a central position between the centers in the arrangement direction of the semiconductor chips 40a and 40b
  • the center line CLm is a virtual line orthogonal to the arrangement direction and passing through the elemental center.
  • the main terminals 70C and the main terminals 70E are alternately arranged.
  • the side surfaces of the adjacent main terminals 70C and 70E are opposed to each other.
  • the main terminal 70C and the main terminal 70E have a plurality of side facing portions, specifically, four, the inductance can be effectively reduced.
  • at least a part of each of the main terminals 70C and 70E constituting the main terminal group 72a is arranged in the region A1a. Therefore, the current path between the main terminals 70C and 70E constituting the main terminal group 72a and the main electrode of the semiconductor chip 40a is simplified, and the inductance can be reduced.
  • each of main terminals 70C and 70E constituting main terminal group 72b is arranged in region A1b. Therefore, the current path between the main terminals 70C and 70E constituting the main terminal group 72b and the main electrode of the semiconductor chip 40b can be simplified, and the inductance can be reduced. As described above, the inductance of the main circuit wiring can be reduced as compared with the related art.
  • the odd-numbered main terminals 70 are arranged symmetrically with respect to the center line CLm of the two semiconductor chips 40.
  • the side facing portions are arranged in line symmetry. Therefore, the main current of the semiconductor chips 40a and 40b flows so as to be line-symmetric with respect to the center line CLm. That is, the inductance on the semiconductor chip 40a side is substantially equal to the inductance on the semiconductor chip 40b side. As described above, by adjusting the inductance, the current imbalance can be suppressed.
  • the present invention is not limited to this.
  • the present invention is also applicable to a configuration in which three or more semiconductor chips 40 are connected in parallel.
  • the number of main terminals 70 is not particularly limited.
  • Each of the main terminal groups 72 may be configured by two or more main terminals 70 including the main terminals 70C and 70E.
  • seven main terminals 70 may be provided, and main terminal groups 72a and 72b may be configured by three main terminals 70.
  • the connecting portions 96 (86C, 86E) shown in FIGS. 16 to 18 may be combined.
  • the invention is not limited to this.
  • the switching element and the diode may be separate chips.
  • the example in which the terminal 60 is provided as the semiconductor device 20 having the double-sided heat dissipation structure has been described, but the present invention is not limited to this.
  • the terminal 60 may not be provided.
  • a protrusion protruding toward the emitter electrode 42 may be provided on the conductive member 50E.
  • the example in which the heat radiation surfaces 54C and 54E are exposed from the sealing resin body 30 is shown, a configuration in which the heat radiation surfaces 54C and 54E are not exposed from the sealing resin body 30 may be adopted.
  • the heat radiation surfaces 54C and 54E may be covered by an insulating member (not shown).
  • the sealing resin body 30 may be molded in a state where the insulating member is bonded to the heat radiation surfaces 54C and 54E.
  • the power module 110 forms a set of parallel circuits 11.
  • the power module 110 includes a semiconductor device 20, a cooler 120, a capacitor C1, a P bus bar 130, an N bus bar 140, an output bus bar 150, a drive board 160, an external A connection terminal 170 and a protection member 180 are provided.
  • FIGS. 21 and 23 to 26 are plan views, but in order to make the internal elements of the protection member 180 easy to understand, the internal elements are shown by solid lines.
  • FIG. 27 is a schematic diagram for explaining connections between the semiconductor device 20, the capacitor C1, and the bus bars 130, 140, and 150.
  • the semiconductor device 20 has a 1-in-1 package structure.
  • the power module 110 includes two semiconductor devices 20.
  • One of the semiconductor devices 20 constitutes the upper arm 10U, and another one constitutes the lower arm 10L. That is, the semiconductor device 20 includes a semiconductor device 20U forming the upper arm 10U and a semiconductor device 20L forming the lower arm 10L.
  • the basic configurations of the semiconductor devices 20U and 20L are substantially the same as each other.
  • Each of the semiconductor devices 20U and 20L has seven main terminals 70, specifically, three main terminals 70C and four main terminals 70E.
  • the main terminals 70C and 70E are alternately arranged in the X direction.
  • the semiconductor chip 40 included in the semiconductor device 20U and forming the upper arm 10U is referred to as a semiconductor chip 40U
  • the semiconductor chip 40 included in the semiconductor device 20L and forming the lower arm 10L is referred to as a semiconductor chip 40L.
  • the semiconductor device 20L has the same structure as the structure shown in FIG.
  • the main terminal 70C has a configuration in which the protruding length from the sealing resin body 30 is longer than the main terminal 70E.
  • the semiconductor device 20U has a configuration opposite to that of the semiconductor device 20L.
  • the main terminal 70E has a configuration in which the protruding length from the sealing resin body 30 is longer than the main terminal 70C. As described above, the main terminal 70E is longer in the semiconductor device 20U, and the main terminal 70C is longer in the semiconductor device 20L.
  • the main terminal 70C of the semiconductor device 20U and the main terminal 70E of the semiconductor device 20L have the same length, and the main terminal 70E of the semiconductor device 20U and the main terminal 70C of the semiconductor device 20L have the same length.
  • the semiconductor devices 20U and 20L are arranged side by side in the X direction with a predetermined gap. That is, they are arranged side by side in the thickness direction of the semiconductor chip 40, that is, in the direction orthogonal to the Z direction.
  • the semiconductor devices 20U and 20L are arranged such that the surfaces 31 of the sealing resin body 30 are on the same side and the back surfaces 32 are on the same side in the Z direction.
  • the surfaces 31 of the semiconductor devices 20U and 20L have a positional relationship of substantially flush with each other in the Z direction, and the back surfaces have a positional relationship of substantially flush with each other in the Z direction.
  • the protruding portion of the signal terminal 80 from the sealing resin body 30 is substantially L-shaped.
  • the protruding portion of the signal terminal 80 has one bent portion of approximately 90 degrees.
  • the portion extending from the root to the bent portion of the sealing resin body 30 extends in the Y direction
  • the portion extending from the bent portion to the protruding tip is the Z direction, and extends to the opposite side to the capacitor C1. I have.
  • the cooler 120 mainly cools the semiconductor device 20.
  • the cooler 120 is formed using a metal material having excellent heat conductivity, for example, an aluminum-based material.
  • the cooler 120 has a supply pipe 121, a discharge pipe 122, and a heat exchange unit 123. Since the cooler 120 is provided in the power module 110, it is also referred to as an in-module cooler.
  • the heat exchange section 123 is constituted by a pair of plates 124 and 125.
  • the plates 124 and 125 are formed using a thin metal plate having a substantially rectangular shape in a plane. At least one of the plates 124 and 125 is formed into a shape swelled in the Z direction, for example, a pot bottom shape with a shallow bottom by pressing. In this example, the plate 124 has a pan bottom shape. Further, the outer peripheral edges of the plates 124 and 125 are fixed by caulking or the like, and are joined to each other by brazing or the like on the entire periphery, whereby a flow path 126 is formed between the plates 124 and 125. .
  • the heat exchange section 123 is a flat tubular body as a whole.
  • the cooler 120 has two heat exchange units 123, and the heat exchange units 123 are arranged in two stages in the Z direction.
  • the two semiconductor devices 20U and 20L are sandwiched by the two heat exchange units 123 in a state where they are arranged side by side in the X direction.
  • the two heat exchange sections 123 are arranged so that the plates 124 face each other.
  • One of the heat exchange units 123 is arranged on one surface 31 side of the semiconductor device 20, and another one of the heat exchange units 123 is arranged on the back surface 32 side.
  • an electrical insulating member such as a grease, a ceramic plate, or a resin material is disposed between the semiconductor device 20 and the plate 124 of the heat exchange unit 123.
  • the supply pipe 121 is a cylindrical body having a flow path formed therein, and extends in the Z direction.
  • the supply pipe 121 is disposed at one end in the X direction and at the main terminal 70 side in the Y direction with respect to the heat exchange section 123 having a substantially rectangular planar shape.
  • the flow path of the supply pipe 121 is connected to each of the heat exchange sections 123 and communicates with the flow path 126 of the heat exchange section 123.
  • one end of the supply pipe 121 is open, and the other end is connected to the second-stage heat exchange section 123.
  • the flow path 126 of the first-stage heat exchange section 123 is connected to the flow path of the supply pipe 121 during the extension of the supply pipe 121.
  • the first stage is on the side near the opening ends of the supply pipe 121 and the discharge tube 122, and the second stage is on the far side. A part of the supply pipe 121 protrudes outside the protection member 180 from the open end.
  • the discharge pipe 122 is a cylindrical body having a flow path formed therein, and extends in the Z direction.
  • the discharge pipe 122 is disposed at an end opposite to the supply pipe 121 in the X direction and an end on the signal terminal 80 side in the Y direction with respect to the heat exchange portion 123 having a substantially rectangular planar shape.
  • the flow path of the discharge pipe 122 is connected to each of the heat exchange sections 123 and communicates with the flow path 126 of the heat exchange section 123.
  • the discharge pipe 122 is open on the same side as the supply pipe 121 in the Z direction.
  • the end opposite to the open end is connected to the second-stage heat exchange section 123.
  • the flow path 126 of the first-stage heat exchange section 123 is connected to the flow path of the discharge pipe 122 during the extension of the discharge pipe 122. A part of the discharge pipe 122 protrudes out of the protection member 180 from the open end.
  • the refrigerant flowing from the supply pipe 121 expands in the flow path 126 in the heat exchange section 123 and is discharged from the discharge pipe 122.
  • the supply pipe 121 and the discharge pipe 122 are provided at diagonal positions of a substantially rectangular plane.
  • the semiconductor chips 40U and 40L disposed between the supply pipe 121 and the discharge pipe 122 can be effectively cooled in the X direction and the Y direction by being provided at the diagonal positions.
  • an inner fin may be provided in the flow path 126 of the heat exchange section 123.
  • the inner fin is a metal plate bent in a wave shape. With the arrangement of the inner fins, heat transfer between the plates 124 and 125 and the refrigerant flowing through the flow path 126 can be promoted.
  • a phase-change refrigerant such as water or ammonia, or a non-phase-change refrigerant such as ethylene glycol
  • the cooler 120 mainly cools the semiconductor device 20. However, in addition to the cooling function, a function of heating when the environmental temperature is low may be provided. In this case, the cooler 120 is called a temperature controller. Further, the refrigerant is referred to as a heat medium.
  • the capacitor C1 may be disposed near the pair of semiconductor devices 20U and 20L included in the power module 110, and may have at least a function of supplying necessary charges at the time of switching. Therefore, the capacitance of the capacitor C1 is, for example, 10 to 20 ⁇ F.
  • the capacitor C1 has a substantially rectangular parallelepiped shape.
  • the capacitor C1 has a flat shape, and the thickness, that is, the length in the Z direction is sufficiently shorter than the length in the X direction and the length in the Y direction. Thus, the capacitor C1 is small.
  • a film capacitor can be used as the capacitor C1
  • the plane rectangle is longer in the X direction than in the Y direction.
  • Most of the condenser C ⁇ b> 1 is arranged at a position overlapping with the heat exchange unit 123 of the cooler 120 in the projection view in the Z direction.
  • most of the semiconductor devices 20 ⁇ / b> U and 20 ⁇ / b> L specifically, portions other than the protruding portion of the main terminal 70 and the protruding portion of the signal terminal 80 overlap. Therefore, capacitor C1 is arranged alongside semiconductor devices 20U and 20L in the Z direction.
  • the flat rectangular capacitor C1 is disposed at a position where both ends in the X direction do not overlap the cooler 120, that is, outside the cooler 120.
  • the capacitor C1 is arranged so as to sandwich the heat exchange unit 123 between the capacitor C1 and the semiconductor device 20.
  • the capacitor C ⁇ b> 1 is arranged on the side opposite to the semiconductor device 20 with respect to the heat exchange unit 123.
  • the capacitor C1 is arranged on the side opposite to the semiconductor device 20 with respect to the first-stage heat exchange section 123. That is, they are arranged on the opening end sides of the supply pipe 121 and the discharge pipe 122.
  • the capacitor C ⁇ b> 1 is arranged at a position closer to the semiconductor device 20 than the open ends of the supply pipe 121 and the discharge pipe 122 in the Z direction.
  • the capacitor C1 has a positive terminal (not shown) for external connection on a surface on the heat exchange section 123 side in the Z direction, and a negative terminal (not shown) on a surface opposite to the positive terminal.
  • the P bus bar 130, the N bus bar 140, and the output bus bar 150 are metal plates containing a metal having excellent conductivity, for example, copper.
  • each bus bar has a substantially uniform thickness.
  • the P bus bar 130, the N bus bar 140, and the output bus bar 150 have substantially the same thickness as each other.
  • irregularly shaped strips having partially different thicknesses can also be used.
  • P bus bar 130, N bus bar 140, and output bus bar 150 are electrically separated from cooler 120.
  • the P bus bar 130 has a connection part 131, a common wiring part 132, and a parallel wiring part 133.
  • the connection part 131 is a part connected to the positive terminal of the capacitor C1.
  • the entire portion overlapping with the capacitor C1 is the connection portion 131 in the projection view in the Z direction.
  • the connection portion 131 may be provided on a portion overlapping the capacitor C1 in the projection view in the X direction or the Y direction, that is, on a side surface of the capacitor C1.
  • the common wiring section 132 extends from one end of the connection section 131 in the Y direction.
  • the common wiring part 132 is a part of the P bus bar 130 that functions as the common wiring 11P.
  • the length of the common wiring section 132 in the X direction that is, the width, is smaller than that of the connection section 131.
  • the common wiring part 132 is continuous with the central part of the connection part 131 in the X direction.
  • the common wiring portion 132 is substantially flush with the connection portion 131 and extends in the Y direction. A part of the common wiring part 132 projects outside the protection member 180.
  • the parallel wiring section 133 functions as at least a wiring for electrically connecting the positive terminal of the capacitor C1 and the upper arm 10U of the upper and lower arm circuits 10, that is, a wiring for connecting the upper and lower arm circuits 10 and the capacitor C1 in parallel. Further, in this example, the upper arm 10U also functions as a wiring that electrically connects the upper arm 10U to the common wiring 11P, that is, the common wiring part 132.
  • the parallel wiring portion 133 extends from the end opposite to the common wiring portion 132 with respect to the connection portion 131.
  • the width of the parallel wiring portion 133 is smaller than that of the connection portion 131.
  • the parallel wiring portion 133 extends with a constant width.
  • the parallel wiring portion 133 is arranged to be biased to one side with respect to the center line CL1 so as not to straddle a center line CL1 (see FIG. 23) bisecting the capacitor C1 in the X direction.
  • the parallel wiring portion 133 is connected to the connection portion 131 on the side of the semiconductor device 20U (semiconductor chip 40U) in the arrangement direction of the semiconductor devices 20U and 20L.
  • the parallel wiring portion 133 is substantially L-shaped.
  • the parallel wiring portion 133 has a parallel portion 134 extending in the Y direction from a boundary portion with the connection portion 131, and a bent portion 135 bent along the parallel portion 134 and extending in the Z direction.
  • the parallel portion 134 is also referred to as a Y-direction extending portion.
  • the bent portion 135 is also called a Z-direction extending portion.
  • the parallel portion 134 extends in the Y direction on the side opposite to the common wiring portion 132.
  • the parallel portion 134 is substantially flush with the connection portion 131 and extends in the Y direction.
  • the parallel portion 134 overlaps at least a part of each of the seven main terminals 70C and 70E of the semiconductor device 20U in a projection view in the Z direction.
  • the parallel portion 134 extends to substantially the same position as the protruding tip of the main terminal 70C of the semiconductor device 20U, and the entire protruding portions of the three main terminals 70C overlap in projection.
  • the four main terminals 70E extend to a position farther than the parallel portion 134 with respect to the capacitor C1.
  • the bent portion 135 extends in the Z direction on the side opposite to the capacitor C1.
  • the thickness direction of the bent portion 135 is substantially parallel to the Y direction.
  • the entire bent portion 135 is a facing portion 135a facing the output bus bar 150 in the Y direction.
  • the facing portion 135a and the output bus bar 150 face each other in the plate thickness direction, that is, the plate surfaces face each other.
  • a protrusion 136 is formed at the tip of the facing portion 135a, that is, at the tip of the extension of the parallel wiring portion 133 so that the main terminal 70C of the semiconductor device 20U is connected.
  • the protrusion 136 is provided for each main terminal 70C.
  • the main terminals 70C are joined by laser welding or the like in a state where they are arranged on the distal end surfaces of the corresponding convex portions 136.
  • the protrusion 136 is provided in this manner, the main terminal 70E passes through a concave portion where the protrusion 136 is not provided, so that contact between the P bus bar 130 and the main terminal 70E can be prevented.
  • the N bus bar 140 has a connection part 141, a common wiring part 142, and a parallel wiring part 143.
  • the connection part 141 is a part connected to the negative terminal of the capacitor C1.
  • the entire portion overlapping with the capacitor C1 is the connection portion 141 in the projection view in the Z direction.
  • the connection portion 141 may be provided on a portion that overlaps the capacitor C1 in a projection view in the X direction or the Y direction, that is, on a side surface of the capacitor C1.
  • the condenser C ⁇ b> 1 and the connection parts 131 and 141 disposed on both sides of the condenser C ⁇ b> 1 are electrically separated from the cooler 120.
  • An electric insulating member is interposed between the condenser C1 including the connection portions 131 and 141 and the cooler 120.
  • the common wiring section 142 extends from one end of the connection section 141 in the Y direction.
  • the common wiring part 142 is a part of the N bus bar 140 that functions as the common wiring 11N.
  • the width of the common wiring section 142 is smaller than that of the connection section 141, and is substantially the same as the width of the common wiring section 132.
  • the common wiring part 142 is continuous with the central part of the connection part 141 in the X direction.
  • the common wiring portion 142 is substantially flush with the connection portion 141 and extends in the Y direction. A part of the common wiring part 132 projects outside the protection member 180.
  • the common wiring portions 132 and 142 substantially match in the projection view in the Z direction.
  • the common wiring portions 132 and 142 are opposed to each other in the Z direction with a spacing substantially equal to the thickness of the capacitor C1. Thereby, the inductance of the main circuit wiring can be reduced.
  • the parallel wiring portion 143 functions as at least a wiring for electrically connecting the negative terminal of the capacitor C1 and the lower arm 10L of the upper and lower arm circuits 10, that is, a wiring for connecting the upper and lower arm circuits 10 and the capacitor C1 in parallel. Further, in the present example, the lower arm 10L also functions as a wiring that electrically connects the lower arm 10L to the common wiring 11N, that is, the common wiring portion 142.
  • the parallel wiring portion 143 extends from the end opposite to the common wiring portion 142 with respect to the connection portion 141.
  • the width of the parallel wiring portion 143 is smaller than that of the connection portion 141.
  • the parallel wiring portion 143 extends with a constant width.
  • the parallel wiring portion 143 is arranged on the opposite side of the center line CL1 from the parallel wiring portion 133 so as not to straddle the center line CL1 of the capacitor C1.
  • the parallel wiring portion 143 is connected to the connection portion 141 on the side of the semiconductor device 20L (semiconductor chip 40L) in the arrangement direction of the semiconductor devices 20U and 20L.
  • the parallel wiring portion 143 is substantially L-shaped.
  • the parallel wiring part 143 has a parallel part 144 extending along the Y direction from a boundary part with the connection part 141, and a bent part 145 bent along the Z direction with respect to the parallel part 144.
  • the parallel portion 144 extends in the Y direction on the side opposite to the common wiring portion 142.
  • the parallel part 144 is substantially flush with the connection part 141 and extends in the Y direction.
  • the parallel portions 134 and 144 are arranged side by side in the X direction with an interval at which electrical insulation can be secured. The side surfaces of the parallel portions 134 and 144 are opposed to each other. Thereby, the inductance of the main circuit wiring can be reduced.
  • the parallel portion 144 overlaps at least a part of each of the seven main terminals 70C and 70E of the semiconductor device 20L in a projection view in the Z direction.
  • the parallel portion 144 extends to substantially the same position as the protruding tip of the main terminal 70E of the semiconductor device 20L, and the entire protruding portions of the four main terminals 70E overlap in projection.
  • the three main terminals 70C extend to a position farther than the parallel portion 144 with respect to the capacitor C1.
  • the protruding tips of the main terminal 70C of the semiconductor device 20U and the main terminal 70E of the semiconductor device 20L are located at substantially the same position in the Y direction, whereby the extending tips of the parallel portions 134 and 144 are also located at substantially the same position. ing.
  • the bent portion 145 extends in the Z direction on the side opposite to the capacitor C1.
  • the thickness direction of the bent portion 145 is substantially parallel to the Y direction.
  • the distal end of the extension of the bent portion 145 is located at substantially the same position as the distal end of the extension of the bent portion 135 of the P bus bar 130.
  • the bent portions 135 and 145 are also arranged side by side in the X direction with an interval at which electrical insulation can be ensured.
  • the side surfaces of the bent portions 135 and 145 face each other. Thereby, the inductance of the main circuit wiring can be reduced.
  • the N bus bar 140 is located farther away from the semiconductor device 20 in the Z direction than the P bus bar 130.
  • a part of the bent portion 145 is a facing portion 145a facing the output bus bar 150 in the Y direction.
  • the plate portions of the facing portion 145a and the output bus bar 150 face each other.
  • a protrusion 146 is formed at the tip of the facing portion 145a, that is, at the tip of the extension of the parallel wiring portion 143 so that the main terminal 70E of the semiconductor device 20L is connected.
  • the protrusion 146 is provided for each main terminal 70E.
  • the main terminals 70E are joined by laser welding or the like in a state where they are arranged on the distal end surfaces of the corresponding convex portions 146.
  • the parallel wiring portion 133 and the main terminal 70C of the semiconductor device 20U connect the positive electrode of the capacitor C1 and the collector electrode of the upper arm 10U.
  • the parallel wiring portion 143 and the main terminal 70E of the semiconductor device 20L connect the negative electrode of the capacitor C1 and the lower arm.
  • a 10 L emitter electrode is connected.
  • the upper and lower arm circuit 10 and the capacitor C1 are connected in parallel by the parallel wiring portion 133 and the main terminal 70C of the semiconductor device 20U, and the parallel wiring portion 143 and the main terminal 70E of the semiconductor device 20L, thereby forming the parallel circuit 11. ing.
  • the common circuits 132 and 142 connect the parallel circuits to the VH line 12H and the N line 13 which are power lines.
  • the output bus bar 150 is a bus bar for connecting a connection point between the upper arm 10U and the lower arm 10L to a three-phase winding of the motor generator.
  • the output bus bar 150 is also called an O bus bar.
  • the output bus bar 150 is arranged not on the signal terminal 80 side but on the main terminal 70 side in the Y direction.
  • the output bus bar 150 extends in the X direction without a bent portion, with the thickness direction being the Y direction.
  • the output bus bar 150 forms at least a part of the output wiring 15.
  • a current sensor (not shown) can be arranged around the output bus bar 150.
  • the output bus bar 150 has a wide portion 151 having a length in the Z direction, that is, a wide width, and a narrow portion 152 having a width smaller than the wide portion 151.
  • the narrow portion 152 continues to one end of the wide portion 151, and is substantially flush with the wide portion 151 and extends in the X direction.
  • the wide portion 151 is entirely disposed inside the protective member 180, a part of the narrow portion 152 is disposed inside the protective member 180, and the remaining portion protrudes outside the protective member 180.
  • the wide portion 151 is provided so as to substantially coincide with a range between an end portion of the parallel wiring portion 143 far from the center line CL1 and an end portion of the parallel wiring portion 133 far from the center line CL1 in the X direction. ing.
  • a supply pipe 121 is arranged at the end of the wide portion 151.
  • the wide portion 151 is provided at a predetermined distance from the bent portions 135 and 145 in the Y direction.
  • the predetermined interval substantially corresponds to, for example, a length obtained by subtracting the thickness of the output bus bar 150 from the length between the protruding tips of the main terminals 70C and 70E in the semiconductor device 20U.
  • the wide portion 151 is provided in a range from a position overlapping the condenser C1 in the Z direction to a plate 125 constituting the second-stage heat exchange portion 123.
  • a plurality of through holes 153 are formed in the wide portion 151.
  • the main terminal 70E of the semiconductor device 20U and the main terminal 70C of the semiconductor device 20L are inserted into the through holes 153.
  • the main terminal 70 is connected to the wide portion 151 (output bus bar 150) by laser welding or the like.
  • a facing portion 154p facing the P bus bar 130 and a facing portion 154n facing the N bus bar 140 are configured to avoid the through hole 153.
  • the facing portion 154p of the output bus bar 150 and the facing portion 135a of the P bus bar 130 face each other at a predetermined interval in the Y direction, and the facing portion 154n of the output bus bar 150 and the facing portion 145a of the N bus bar 140 face a predetermined length in the Y direction. They face each other with an interval.
  • the width of the parallel wiring portion 143 is smaller than that of the parallel wiring portion 133.
  • the width of the facing portion 145a is smaller than that of the facing portion 135a.
  • the extension length of the facing section 145a is increased, and the facing section 145a is more extended in the Z direction (extending direction) than the facing section 135a.
  • Direction length is increased.
  • the facing area of the facing portion 135a and the facing portion 154p is substantially equal to the facing area of the facing portion 145a and the facing portion 154n.
  • the inductance can be reduced while suppressing an increase in the physique in the X direction.
  • the drive board 160 is formed by mounting electronic components (not shown) on a printed board.
  • a drive circuit section (driver) to which a drive command is input from the control circuit section 9 is formed on the drive board 160.
  • the drive board 160 corresponds to a circuit board.
  • the drive substrate 160 has a substantially planar rectangular shape. In this example, the size of the drive board 160 substantially matches the heat exchange unit 123 of the cooler 120 in the X direction, and is longer than the heat exchange unit 123 in the Y direction.
  • the drive substrate 160 is provided so as to overlap most of the semiconductor devices 20U and 20L in a projection view from the Z direction. Specifically, they are provided so as to overlap except for a part of the main terminal 70.
  • a part of the main terminal 70, the bent portions 135 and 145, and the output bus bar 150 are arranged so as not to overlap with the drive board 160. Further, on the side opposite to the main terminal 70, the common wiring portions 132 and 142 project outside the drive substrate 160.
  • the signal terminals 80 of the semiconductor device 20 are connected to the drive substrate 160.
  • a plurality of through holes (not shown) are formed in the drive substrate 160, and the signal terminals 80 are inserted and mounted in each of the through holes.
  • a driving signal is output from the driving circuit section formed on the driving substrate 160 through the signal terminal 80.
  • the signal terminals 80 are arranged side by side in the X direction.
  • the plurality of signal terminals 80 are inserted and mounted in a line in the X direction near one end of the drive board 160 in the Y direction.
  • the external connection terminal 170 is a terminal for electrically connecting a drive board 160 to a control board 290 described later on which the control circuit section 9 is formed.
  • a plurality of external connection terminals 170 are connected to the drive board 160.
  • a plurality of through holes (not shown) are formed in the drive board 160, and the external connection terminals 170 are inserted and mounted in each of the through holes.
  • a part of the external connection terminal 170 transmits a drive command of the control circuit unit 9 to the drive circuit unit of the drive board 160.
  • the external connection terminal 170 is substantially L-shaped.
  • the external connection terminal 170 has one bent portion of approximately 90 degrees.
  • a portion extending from the connection portion with the drive board 160 to the bent portion extends in the Z direction, and a portion extending from the bent portion to the tip extends toward the common wiring portions 132 and 142 in the Y direction.
  • a portion within a predetermined range from the tip projects out of the protection member 180.
  • the protection member 180 protects other components of the power module 110.
  • the protection member 180 forms an outer shell of the power module 110.
  • a sealing resin body that integrally seals other elements, a preformed case, or the like can be used. In the case of a case, a potting material or the like may be used in combination to enhance the protection.
  • a sealing resin body is employed as the protection member 180.
  • the sealing resin body is molded using a resin material such as an epoxy resin, and is also referred to as a mold resin or a resin molded body.
  • the sealing resin body is formed by, for example, a transfer molding method.
  • the protection member 180 has one surface 181 and a back surface 182 opposite to the one surface 181 in the Z direction.
  • the one surface 181 and the back surface 182 are planes orthogonal to the Z direction.
  • the protection member 180 of this example has a substantially truncated quadrangular pyramid shape. For this reason, the protection member 180 has four side surfaces 183 to 186. Assuming that one surface 181 is a reference surface, any of the side surfaces 183 to 186 is an inclined surface having an acute angle with the one surface 181.
  • the components constituting the power module 110 include a connection portion 141 of the N bus bar 140, a connection portion 131 of the capacitor C 1, a connection portion 131 of the P bus bar 130, a first-stage heat exchange portion 123, , The second-stage heat exchange section 123 and the drive board 160 are arranged in this order.
  • the supply pipe 121 and the discharge pipe 122 protrude out of the protection member 180 from one surface 181. None protrudes from the back surface 182.
  • the capacitor C1 and the connection portion 131 of the P bus bar 130 may be arranged in this order.
  • the common wiring portions 132 and 142 of the P bus bar 130 and the N bus bar 140 project from the side surface 183 on the signal terminal 80 side to the outside of the protection member 180 in the Y direction.
  • the external connection terminal 170 also protrudes from the side surface 183.
  • common wiring portions 132 and 142 are arranged between the external connection terminal 170 on the semiconductor device 20U side and the external connection terminal 170 on the semiconductor device 20L side in the X direction.
  • the external connection terminal 170 protrudes at a position near the back surface 182
  • the common wiring portions 132 and 142 protrude at a position near one surface 181.
  • the surge caused by the switching of the upper and lower arm circuits 10 increases as the amount of current change per unit time (current change rate) increases and as the wiring inductance increases.
  • the surge is reduced by reducing the wiring inductance.
  • a structure that can reduce the wiring inductance and reduce the surge will be described.
  • FIG. 28 is a circuit diagram showing the inverter 7, the smoothing capacitor C2, and the motor generator 3 extracted from the equivalent circuit diagram of FIG. 1, and illustrates wiring inductances that are parasitic on the circuit. As indicated by the alternate long and short dash line in FIG. 28, the power modules 110 of each phase are connected in parallel between the P line 12 and the N line 13 as described above.
  • the wiring inductance that occurs in the portion of the P line 12 while the power modules 110 of each phase are connected is referred to as the inter-phase inductance L2P.
  • a wiring inductance generated at a portion between the connection point with the U-phase common wiring portion 132 and the connection portion with the V-phase common wiring portion 132 is the upper-phase inductance L2P.
  • a wiring inductance generated at a portion between a connection point with the V-phase common wiring portion 132 and a connection portion with the W-phase common wiring portion 132 is the inter-phase inductance L2P.
  • the impedance generated in proportion to the inter-phase inductance L2P is called the inter-phase impedance.
  • a wiring inductance generated at a portion while the power module 110 of each phase is connected is referred to as a lower-phase inductance L2N.
  • a wiring inductance generated at a portion between the connection point with the U-phase common wiring portion 142 and the connection portion with the V-phase common wiring portion 142 is the lower-phase inductance L2N.
  • a wiring inductance generated at a portion between a connection point with the V-phase common wiring portion 142 and a connection portion with the W-phase common wiring portion 142 is the lower-phase inductance L2N.
  • the impedance generated in proportion to the lower inductance L2N is referred to as lower impedance.
  • the wiring inductance of the electric path from the positive terminal of the capacitor C1 to the upper arm 10U inside the power module 110 is referred to as the in-phase upper inductance L1P.
  • the wiring inductance generated at the parallel portion 134 and the bent portion 135 of the P bus bar 130 is the in-phase inductance L1P.
  • the wiring of the portion forming the in-phase upper inductance L1P is called upper wiring 11Pa, and the impedance generated in proportion to the in-phase upper inductance L1P is called upper-phase impedance.
  • the wiring inductance of the electric path from the negative terminal of the capacitor C1 to the lower arm 10L inside the power module 110 is referred to as the in-phase lower inductance L1N.
  • the wiring inductance generated at the parallel portion 144 and the bent portion 145 of the N bus bar 140 is the lower-phase inductance L1N.
  • the wiring of the portion forming the in-phase lower inductance L1N is referred to as lower wiring 11Na, and the impedance generated in proportion to the in-phase lower inductance L1N is referred to as the lower-phase impedance.
  • each impedance is described by taking the inverter 7 as an example, but the impedances of the inverter 8 and the converter 6 also correspond as follows. That is, the power module 110 provided in the first phase among the phases is a first power module, and the power module 110 provided in the second phase is a second power module.
  • the impedance of the electric path from the positive terminal of the capacitor C1 to the upper arm 10U corresponds to the in-phase impedance.
  • the impedance of the electric path from the positive terminal of the capacitor C1 according to the first power module to the upper arm 10U according to the second power module corresponds to the interphase impedance.
  • the impedance of the electric path from the negative terminal of the capacitor C1 to the lower arm 10L corresponds to the in-phase lower impedance.
  • the impedance of the electric path from the negative terminal of the capacitor C1 according to the first power module to the lower arm 10L according to the second power module corresponds to the inter-phase lower impedance.
  • the length of the wiring forming the in-phase inductance L2P is longer than the length of the wiring forming the in-phase inductance L1P. Therefore, the upper-phase inductance L2P is larger than the upper-phase inductance L1P, and the higher-phase impedance is larger than the higher-phase impedance.
  • the wiring length forming the lower-phase inductance L2N is longer than the wiring length forming the upper-phase inductance L1P. Therefore, the lower-phase inductance L2N is larger than the lower-phase inductance L1N, and the lower-phase impedance is larger than the lower-phase impedance. Note that each of the upper-phase inductance L2P and the lower-phase inductance L2N is larger than the value obtained by adding the lower-phase inductance L1N to the upper-phase inductance L1P.
  • the arrow Y1 in FIG. 28 indicates a path in which the surge voltage is absorbed by the capacitor C1 in the closed loop circuit formed by the V-phase parallel circuit 11. This surge voltage is generated when the V-phase switching elements Q1 and Q2 are turned on and off. Similarly, in the U-phase and the W-phase, the surge voltage is absorbed by the capacitor C1 as indicated by an arrow Y1. Such a surge voltage generated and absorbed in the same phase is also referred to as a self-surge voltage in the following description.
  • the closed loop circuit is a circuit formed by the parallel circuit 11 and including no power line, in which the positive terminal of the capacitor C1, the upper wiring 11Pa, the upper and lower arm circuits 10, the lower wiring 11Na, and the negative terminal of the capacitor C1 are sequentially connected in series. .
  • the closed loop circuit can be said to be a path through which the surge voltage is absorbed as described above, and a path through which electric charges necessary for switching of the switching elements Q1 and Q2 are supplied from the capacitor C1 to the switching elements Q1 and Q2.
  • the closed loop circuit is a circuit that does not include the common wires 11P and 11N.
  • P bus bar 130 branches into a portion forming upper wiring 11Pa, which is shown by a two-dot chain line in FIG. 28, and a portion forming common wiring 11P.
  • the common wiring 11P of the P bus bar 130 is also called an upper power wiring connecting the P line 12 and the upper wiring 11Pa.
  • N bus bar 140 branches into a portion forming lower wiring 11Na indicated by a two-dot chain line in FIG. 28 and a portion forming common wiring 11N.
  • the common wiring 11N of the N bus bar 140 is also called a lower power wiring connecting the N line 13 and the lower wiring 11Na.
  • FIG. 28 indicates a path when the self-surge voltage generated in the V-phase propagates from the V-phase closed-loop circuit to the W-phase closed-loop circuit through the power line.
  • a surge voltage that causes interference between the upper and lower arm circuits 10 is also referred to as an interference surge voltage in the following description.
  • an interference surge voltage may be generated between the V phase and the U phase or between the W phase and the U phase.
  • the upper-phase inductance L2P is sufficiently larger than the upper-phase inductance L1P, almost no interference surge voltage propagates from another phase to the own phase, and the interference surge voltage is extremely smaller than the self-surge voltage.
  • the power module 110 includes the upper and lower arm circuits 10, the capacitor C1, the upper wiring 11Pa, the lower wiring 11Na, the common wiring 11P as the upper power wiring, and the common wiring 11N as the lower power wiring.
  • the upper wiring 11Pa connects the positive terminal of the capacitor C1 and the upper arm 10U
  • the lower wiring 11Na connects the negative terminal of the capacitor C1 and the lower arm 10L.
  • the common wirings 11P and 11N connect each of the upper wiring 11Pa and the lower wiring to a power line.
  • the power module 110 forms a closed loop circuit that does not include a power line. Therefore, when electric charges necessary for switching of the upper and lower arm circuits 10 are supplied from the capacitor C1, the electric power supply path does not include a power line. Therefore, the wiring of the path, that is, the upper wiring 11Pa and the lower wiring 11Na can be shortened. On the other hand, if the capacitor C1 is abolished contrary to the present embodiment, a necessary charge is supplied from the smoothing capacitor C2 at the time of switching. In this case, the electric path for supplying electric charges from the smoothing capacitor C2 to the upper and lower arm circuits 10 includes a power line, so that the electric path cannot be sufficiently shortened.
  • the power module 110 it is possible to easily reduce the length of the wiring, which is one of the causes of the surge voltage, as compared with the case where the capacitor C1 is eliminated. Therefore, the wiring inductances L1P and L1N related to the self-surge voltage can be reduced, and the self-surge voltage generated in the upper and lower arm circuits 10 can be reduced. Moreover, since the closed loop circuit does not include the power line, the self-surge voltage is less likely to be superimposed on the power line. Therefore, it is possible to suppress interference of the self-surge voltage with the other upper and lower arm circuits 10 through the power line.
  • the power module 110 capable of reducing the surge voltage as described above is provided for each phase. Therefore, it is possible to promote suppression of interference between the upper and lower arm circuits 10 via the power line between the self-surge voltages.
  • the upper arm 10U has a plurality of main terminals 70C connected to the upper wiring 11Pa
  • the lower arm 10L has a plurality of main terminals 70E connected to the lower wiring 11Na. Therefore, the self-surge voltages act so as to cancel each other between the adjacent main terminals 70C and 70E, and the in-phase upper inductance L1P and the in-phase lower inductance L1N can be reduced. Therefore, the reduction of the self surge voltage is promoted.
  • the output bus bar 150 (that is, the output wiring 15) is provided for connecting the main terminal 70E of the upper arm 10U and the main terminal 70C of the lower arm 10L.
  • the output bus bar 150 has facing portions 154p and 154n facing the upper wiring 11Pa and the lower wiring 11Na. Therefore, the self-surge voltage acts between the opposing portions 154p and 154n of the output bus bar 150 and the upper wiring 11Pa and the lower wiring 11Na to reduce the in-phase upper inductance L1P and the in-phase lower inductance L1N. Can be. Therefore, the reduction of the self surge voltage is promoted.
  • the P bus bar 130 and the N bus bar 140 and the output bus bar 150 face each other in the Y direction.
  • the output bus bar 150 and the semiconductor device 20 overlap in the projection direction in the Y direction, and the facing portion 135a of the P bus bar 130 is arranged between the semiconductor chip 40U and the output bus bar 150 in the Y direction.
  • the facing portion 145a of the N bus bar 140 is arranged between the semiconductor chip 40L and the output bus bar 150 in the Y direction.
  • the current path from the P bus bar 130 to the output bus bar 150 via the semiconductor chip 40U and the current path from the output bus bar 150 to the N bus bar 140 via the semiconductor chip 40L are indicated by the two-dot chain line arrows in FIG. As shown. Therefore, the area of the current loop can be reduced as compared with a 2-in-1 package in which the two semiconductor chips forming the upper and lower arm circuits 10 are packaged in one package. Thereby, the self-surge voltage can be further reduced.
  • the upper impedance between phases is larger than the upper impedance within the phase.
  • the lower impedance between phases is larger than the lower impedance within the phase. Therefore, as shown by the arrow Y2 in FIG. 28, it is possible to suppress the surge voltage from propagating and interfering over the closed loop circuit of each phase.
  • a smoothing capacitor C2 is connected in parallel to the upper and lower arm circuits 10 and smoothes the voltage of the power line. According to this, voltage fluctuation of the power line can be suppressed. Further, since electric charge can be instantaneously supplied from the smoothing capacitor C2 to the capacitor C1, the capacitance of the capacitor C1 can be suppressed. As a result, the size of the capacitor C1 can be reduced.
  • the arrangement of the main terminals 70 is not limited to the above example.
  • at least one main terminal 70C and 70E may be provided.
  • the main terminals 70 at the same potential may be divided into a plurality.
  • the main terminal 70C may be divided into a plurality of terminals. By paralleling a plurality of main terminals, the inductance of the divided main terminals as a whole can be reduced.
  • the common wiring portions 132 and 142 extend on the opposite sides of the parallel portions 134 and 144 with respect to the connection portions 131 and 141.
  • the common wiring portions 132 and 142 may extend on the same side as the parallel portions 134 and 144 with respect to the connection portions 131 and 141.
  • the direction in which the common wiring portions 132 and 142 extend may be different between the upper arm 10U and the lower arm 10L.
  • the common wiring portions 132 and 142 do not have to be arranged to face each other.
  • the upper arm 10U and the lower arm 10L have a plurality of main terminals 70C and 70E, but may have only one main terminal 70C and 70E.
  • the main terminals 70C and the main terminals 70E are arranged alternately. However, a plurality of main terminals 70C may be arranged, or a plurality of main terminals 70E are arranged. May be.
  • the inter-phase upper impedance may be smaller than the intra-phase upper impedance.
  • the inter-phase lower impedance may be smaller than the in-phase lower impedance.
  • the cooler 120 As another example of the power module 110, at least one of the cooler 120, the driving board 160, and the protection member 180 included in the power module 110 may be omitted. Further, the power conversion device 5 in which the smoothing capacitor C2 is eliminated may be used. A configuration in which the capacitor C1 is disposed outside the protection member 180 may be employed.
  • the structure of the cooler 120 is not limited to the above example. A part of the semiconductor device 20 constituting the upper and lower arm circuit 10 may be inserted into the flow path 126 in the cooler 120 and immersed in the refrigerant. In this configuration, the capacitor C1 may be arranged on the cooler 120, and the capacitor C1 and the semiconductor device 20 may be connected. By immersion, the surge voltage can be suppressed while cooling the semiconductor device 20 from both sides.
  • the power conversion device 5 includes a case 210 and a cover 220 constituting a housing, a cooler 230, a plurality of power modules 110, an input terminal block 240, and an output terminal block 250. , A reactor 260, a capacitor unit 270, a bus bar 280, and a control board 290.
  • 30 and 31 are exploded perspective views. 30 and 31, through holes 217a and 217b described later are omitted for convenience. Also, the holes to which the supply pipe 121 and the discharge pipe 122 of the cooler 120 of the power module 110 are attached are omitted.
  • elements accommodated in the case 210 and the cover 220 are illustrated by solid lines.
  • elements housed in the case 210 and the cover 220 are shown by solid lines.
  • each of the other elements is accommodated in the internal space of the housing configured by assembling the case 210 and the cover 220.
  • a constituent material of the case 210 and the cover 220 a configuration is possible in which both are metal materials, both are resin materials, one is a metal material, and the other is a resin material.
  • the case 210 and the cover 220 are both formed by a die casting method using a metal material, specifically, an aluminum-based material.
  • the case 210 has a box shape with one side open.
  • the case 210 has a bottom wall 211 having a substantially rectangular flat shape with the X direction as a longitudinal direction, and side walls 212 to 215 connected to four sides of the bottom wall 211, respectively.
  • the side walls 212 to 215 are erected in the Z direction with respect to the bottom wall 211, and are provided in a substantially rectangular annular shape so as to surround the inner surface of the bottom wall 211.
  • an attachment portion 216 is formed on the side wall 212 in the X direction.
  • the attachment part 216 has a through hole 216 a penetrating the side wall 212.
  • the input terminal block 240 is fixed to the case 210 while being inserted into the through hole 216a.
  • the through hole 216a has a substantially figure-eight shape in the ZY cross section. That is, the through hole 216a has a shape in which two through holes arranged side by side in the Y direction are connected to one.
  • the mounting part 216 has a housing part 216b that houses at least a part of the terminal part on the DC power supply 2 side.
  • the housing portion 216b has a cylindrical shape and extends from the outer surface of the side wall 212 in the X direction.
  • the housing portion 216b is provided so as to include the through hole 216a inside the cylinder when viewed from the X direction by projection.
  • the terminal portion of the DC power supply 2 is electrically connected to the terminal portion of the input terminal block 240 while being fixed to the housing portion 216b.
  • the housing portion 216b is fitted with, for example, a housing of a terminal portion on the DC power supply 2 side.
  • the attachment portion 216 including the through hole 216a is provided at one end side of the center of the side wall 212 in the Y direction, specifically, at a region closer to the side wall 215.
  • Through holes 217a and 217b are formed in the side wall 213 opposite to the side wall 212, as shown in FIGS.
  • the supply pipe 231 of the cooler 230 is inserted into the through hole 217a, and a waterproof seal (not shown) is formed between the supply pipe 231 and the periphery of the opening of the through hole 217a.
  • the discharge pipe 232 of the cooler 230 is inserted into the through hole 217b, and a waterproof seal (not shown) is formed between the discharge pipe 232 and the periphery of the opening of the through hole 217b.
  • the two through holes 217a and 217b are provided at the same position in the Z direction and are separated from each other in the Y direction.
  • the through hole 217a is provided at one end side of the center portion of the side wall 213 in the Y direction, specifically, in a region on the side wall 214 side.
  • the through hole 217b is provided on the other end side of the center portion of the side wall 213, specifically, in a region on the side wall 215 side.
  • an opening 218 is formed in the side wall 214 in the Y direction.
  • the opening 218 penetrates the side wall 214 in the Y direction and is a long hole longer in the X direction than in the Z direction.
  • the opening 218 is provided for connecting the terminal of the output terminal block 250 to the three-phase windings of the motor generators 3 and 4, which are loads.
  • the opening 218 is formed at a position near the side wall 213 in the X direction. Note that the side wall 215 opposite to the side wall 214 has no through hole or the like.
  • the cover 220 has a box shape with a shallower bottom than the case 210.
  • the cover 220 has a bottom wall 221 having a substantially rectangular plane with the X direction as a longitudinal direction, side walls 222 to 225 connected to four sides of the bottom wall 221, and a flange portion 226.
  • the bottom wall 221 faces the bottom wall 211 of the case 210 in the Z direction.
  • the side walls 222 to 225 are erected in the Z direction with respect to the bottom wall 221 and are provided in a substantially rectangular annular shape so as to surround the inner surface of the bottom wall 221.
  • the side walls 222 to 225 correspond to the side walls 212 to 215 of the case 210.
  • the side wall 223 is provided on the side wall 213 side in the X direction
  • the side wall 224 is provided on the side wall 214 side in the Y direction.
  • the flange portion 226 is the outer peripheral edge of the cover 220, and continues to the end of the side walls 222 to 225 opposite to the bottom wall 221.
  • the flange portion 226 extends outward from the side walls 222 to 225 in the Y direction, opposite to the housing space.
  • the case 210 and the cover 220 are assembled by fastening or the like in a state where the flange portion 226 and the ends of the side walls 212 to 215 of the case 210, specifically, the end opposite to the bottom wall 211 face each other. I have.
  • a sealing member such as an O-ring or a liquid adhesive before curing is interposed between the outer peripheral edges of the case 210 and the cover 220 to form a waterproof seal portion.
  • a recess 227 is formed in the cover 220.
  • the concave portion 227 is provided with the control board 290 corresponding to a connector 291 described later.
  • the recess 227 is provided so as to include the side wall 223, and the opening of the side wall 223 is continuous with the opening on the one surface side of the box-shaped cover 220.
  • the concave portion 227 is opened not only on one surface but also on the side wall 223.
  • the recess 227 is recessed in a direction away from the bottom wall 211.
  • the concave portion 227 provides an opening space in a substantially trapezoidal plane on the side wall 223.
  • the concave portion 227 is provided in a region closer to the side wall 224 than the central portion of the side wall 223 in the Y direction. In the projection view from the Z direction, the opening of the recess 227 in the side wall 223 is provided at a position overlapping the through hole 217a.
  • the cooler 230 mainly cools the elements in the housing constituting the power conversion device 5. Cooler 230 is formed using, for example, a metal material having excellent thermal conductivity, for example, an aluminum-based material. As shown in FIGS. 30 and 31, the cooler 230 has a supply pipe 231, a discharge pipe 232, and a heat exchange unit 233. Most of the cooler 230 is disposed in the case 210, and a part of the cooler 230 projects out of the case 210.
  • the supply pipe 231 is a cylindrical body having a flow path formed therein, and extends in the X direction.
  • the supply pipe 231 is provided on one end side in the Y direction, specifically, on the side wall 215 side of the case 210 with respect to the flat heat exchange section 233 whose thickness direction is in the Z direction.
  • One end of the supply pipe 231 is open, and the other end is connected to the heat exchange unit 233.
  • the flow path of the supply pipe 231 communicates with the flow path 234 of the heat exchange unit 233.
  • a part of the supply pipe 231 protrudes out of the case 210 through a through hole 217 a provided in a side wall 213 of the case 210.
  • a waterproof seal portion is formed between the supply pipe 231 and the wall surface of the through hole 217a by a seal member (not shown).
  • the discharge pipe 232 is a cylindrical body having a flow path formed therein, and extends in the X direction.
  • the discharge pipe 232 is provided at a position distant from the supply pipe 231 in the Y direction, specifically, on the side wall 214 side of the case 210.
  • One end of the discharge pipe 232 is open, and the other end is connected to the heat exchange unit 233 on the same side as the supply pipe 231.
  • the flow path of the discharge pipe 232 communicates with the flow path 234 of the heat exchange unit 233.
  • a part of the discharge pipe 232 protrudes out of the case 210 through a through hole 217b provided in a side wall 213 of the case 210.
  • a waterproof seal portion is formed between the discharge pipe 232 and the wall surface of the through hole 217b by a seal member (not shown).
  • the heat exchange unit 233 has a flow path 234 in which the refrigerant flows.
  • a supply pipe 231 is connected to one end of the flow path 234, and a discharge pipe 232 is connected to an end opposite to the supply pipe 231.
  • the refrigerant flowing from the supply pipe 231 flows through the flow path 234 in the heat exchange unit 233 and is discharged from the discharge pipe 232.
  • the heat exchange unit 233 has one surface 233a and a back surface 233b opposite to the one surface 233a in the Z direction.
  • the power conversion device 5 includes a plurality of power modules 110, and the power modules 110 are arranged on one surface 233a and the back surface 233b, respectively.
  • the power conversion device 5 includes a power module 110 disposed on one surface 233a and a power module 110 disposed on the rear surface 233b.
  • the power modules 110 are arranged on both surfaces of the heat exchange unit 233, respectively.
  • the power module 110 is arranged adjacent to the heat exchange unit 233.
  • the heat exchange part 233 has a flat plate shape.
  • the length of the heat exchange part 233 in the Z direction is substantially constant at least in the portion where the flow path 234 is formed.
  • the length in the Z direction is sufficiently shorter than the minimum length in the direction orthogonal to the Z direction, that is, the minimum length in the X direction and the minimum length in the Y direction. That is, it is formed in a thin plate shape.
  • the heat exchange unit 233 is arranged in most of the area excluding the input terminal block 240 and the output terminal block 250 in the case 210. As shown in FIG. 30 and FIG. 37 and the like, the heat exchange unit 233 has a notch 235. Thus, the heat exchange section 233 has a substantially U shape. The two arms of the substantially U-shaped heat exchange unit 233 extend in the X direction. The cooler 230 is accommodated in the case 210 such that both ends of the U-shape of the heat exchange unit 233 are on the side wall 212 side in the X direction. That is, the two arms of the heat exchange unit 233 are arranged so as to be arranged in the Y direction.
  • the supply pipe 231 and the discharge pipe 232 are connected to the arm on the side opposite to the end, not the end of the U-shape, and protrude from the side wall 213 to the outside.
  • the supply pipe 231 is connected to one of the arms of the heat exchange unit 233, and the discharge pipe 232 is connected to another arm.
  • the power module 110 is disposed on the arm to which the supply pipe 231 is connected.
  • the reactor 260 and the condenser unit 270 are arranged on the arm to which the discharge pipe 232 is connected.
  • the power module 110, the reactor 260, and the condenser unit 270 are configured to be cooled by the cooler 230 (heat exchange unit 233).
  • the heat exchange unit 233 (cooler 230) is supported at a predetermined height with respect to the bottom wall 211 of the case 210 by a plurality of support units 236. Then, in the supported state, it is fixed to the case 210 by screw fastening or the like.
  • a phase-change refrigerant such as water or ammonia, or a non-phase-change refrigerant such as ethylene glycol
  • the refrigerant is cooled by, for example, a radiator and supplied to cooler 230.
  • the cooler 230 mainly cools the components constituting the power conversion device 5, specifically, the power module 110, the reactor 260, and the condenser unit 270.
  • a function of heating when the environmental temperature is low may be provided.
  • the cooler 230 is called a temperature controller.
  • the refrigerant is referred to as a heat medium.
  • the power converter 5 of this example includes eight power modules 110.
  • Each power module 110 is basically the same as the above-described configuration (see FIGS. 21 to 26), but is provided with a bent portion or a length in consideration of connectivity with other elements. Or different.
  • Two of the eight power modules 110 constitute the converter 6 and the remaining six constitute inverters 7 and 8.
  • the eight power modules 110 are arranged as a set at predetermined intervals in the X direction, and this set is arranged in two stages in the Z direction.
  • the set disposed on the bottom wall 221 side of the cover 220 is also referred to as an upper stage
  • the set disposed on the bottom wall 211 side of the case 210 is also referred to as a lower stage.
  • the upper stage includes a power module 110 constituting the first phase of the converter 6 and three power modules 110 constituting the three phases (U, V, W) of the inverter 7.
  • the first phase of converter 6 is also referred to as converter 6a
  • the second phase is also referred to as converter 6b.
  • the upper power module 110 is one of the arms of the heat exchange section 233 having a substantially U shape, and is disposed on one surface 233a. Specifically, four power modules 110 are arranged from the side wall 213 side in the order of the U phase, the V phase, the W phase of the inverter 7 and the converter 6a.
  • the lower stage includes a power module 110 constituting the converter 6b and three power modules 110 constituting the three phases (U, V, W) of the inverter 8.
  • the lower power module 110 is the same arm as the upper one in the substantially U-shaped heat exchange unit 233, and is disposed on the back surface 233b. Specifically, four power modules 110 are arranged from the side wall 213 side in the order of the U phase, V phase, W phase of the inverter 8 and the converter 6b.
  • each power module 110 has a side surface 183 of the protection member 180, that is, a surface on which the common wiring portions 132 and 142 of the P bus bar 130 and the N bus bar 140 and the external connection terminal 170 protrude. 215 and the side surface 184 are arranged on the side wall 214 side.
  • the upper power module 110 and the lower power module 110 are arranged so as to overlap each other when viewed in the Z-direction by projection. That is, four pairs of power modules 110 sandwich the heat exchange unit 233.
  • each of the power modules 110 one surface 181 of the protection member 180 is arranged on the heat exchange unit 233 side.
  • the power module 110 is fixed to the heat exchange unit 233 by fixing means such as bonding and fastening.
  • the upper four output bus bars 150 are arranged side by side in the X direction at a predetermined interval.
  • the lower four output busbars 150 are also arranged in the X direction at the same interval as the upper row.
  • the upper and lower pairs of power modules 110 are arranged twice symmetrically with respect to the Y direction. For this reason, the position of the output bus bar 150 is shifted in the X direction between the upper stage and the lower stage.
  • the projecting position of the output bus bar 150 is one end in the X direction of the protection member 180 in the upper stage, and is opposite to the upper end in the lower stage. Therefore, in an adjacent pair, the upper output bus bar 150 and the lower output bus bar 150 are arranged in the vicinity in the X direction.
  • the common wiring portions 132 and 142 of the P bus bar 130 and the N bus bar 140 are provided on a center line passing through the center in the X direction and parallel to the Y direction.
  • the common wiring portions 132 and 142 are arranged symmetrically with respect to the center line.
  • the power module 110 is arranged symmetrically with respect to the center line at a portion other than the protruding portion of the output bus bar 150.
  • the upper common wiring portions 132 and 142 and the lower common wiring portions 132 and 142 overlap in the Z-direction projection view. Details of the cooling structure including the flow path of the power module 110 will be described later.
  • the input terminal block 240 has a positive terminal 241 and a negative terminal 242 for electrically connecting the DC power supply 2 and the power converter 5, and a housing 243 holding these terminals 241 and 242.
  • the positive terminal 241 and the negative terminal 242 function as terminals for inputting, for example, a DC voltage supplied from the DC power supply 2 to the power converter 5.
  • Each of the positive electrode terminal 241 and the negative electrode terminal 242 may be formed of one conductive member (for example, a bus bar) or may be formed of a plurality of electrically connected conductive members.
  • the input terminal block 240 is provided near one of four corners of the case 210 having a substantially rectangular planar shape. Specifically, it is arranged near a corner defined by the side walls 212 and 215.
  • the input terminal block 240 is arranged on the bottom wall 211.
  • the input terminal block 240 is disposed from the bottom wall 211 to a position closer to the cover 220 than one surface 233 a of the heat exchange unit 233 in the Z direction.
  • the positive terminal 241 is electrically connected to the positive electrode of the DC power supply 2, and the negative terminal 242 is electrically connected to the negative electrode of the DC power supply 2.
  • the housing 243 is formed using an electrically insulating material, for example, a resin material.
  • a housing 243 made of a resin material is formed integrally with the positive terminal 241 and the negative terminal 242.
  • the positive electrode terminal 241 and the negative electrode terminal 242 are arranged at the same position in the Z direction and at predetermined intervals in the Y direction at least in a part of the range from the connection side to the DC power supply 2.
  • the housing 243 has power connection portions 244a and 244b and a bus bar fixing portion 245.
  • the power supply connection portions 244a and 244b are portions within a predetermined range from a connection end with the DC power supply 2.
  • the power supply connection portion 244a covers the positive terminal 241 so that the positive terminal 241 is exposed from one end. This enables electrical connection between the positive terminal 241 and the positive electrode of the DC power supply 2.
  • the power supply connection portion 244b covers the negative terminal 242 such that the negative terminal 242 is exposed from one end. This enables electrical connection between the negative electrode terminal 242 and the negative electrode of the DC power supply 2.
  • Each of the power supply connection parts 244a and 244b has a substantially columnar shape and is connected to one in the Y direction.
  • the outer surface of the housing 243 has a substantially figure-eight shape corresponding to the through hole 216a.
  • a seal member (not shown) is disposed between the outer surfaces of the power supply connection portions 244a and 244b and the wall surface of the through hole 216a in the case 210 in a state where the distal end portions of the power supply connection portions 244a and 244b are disposed in the through hole 216a.
  • a seal portion is formed.
  • the busbar fixing portion 245 is connected to the power supply connection portions 244a and 244b in the X direction, and is entirely accommodated in the case 210.
  • the bus bar fixing portion 245 is a portion to which a part of the bus bar 280 is fixed, and has a flat mounting surface so that the bus bar 280 can be fixed easily.
  • a mounting surface 245a to which a VL bus bar 281 to be described later is fixed and a mounting surface 245b to which an N bus bar 282 is fixed are provided.
  • the busbar fixing portion 245 has a substantially rectangular parallelepiped shape, and mounting surfaces 245a and 245b are provided on the same side in the Z direction.
  • the mounting surfaces 245a and 245b are arranged in the Y direction, and are provided with their positions shifted in the Z direction. That is, the bus bar fixing portion 245 has a stepped shape on the fixing surface side of the bus bar 280.
  • the mounting surface 245b is provided farther from the bottom wall 221 of the cover 220 than the mounting surface 245a.
  • Each of the mounting surfaces 245a and 245b is located closer to the cover 220 than one surface 233a of the heat exchange unit 233.
  • the output terminal block 250 has a plurality of terminals 251 connected to the power module 110, a housing 252 for holding these terminals, and a support portion 253 for fixing the output terminal block 250 in the case 210.
  • the terminal 251 may be formed of one conductive member (for example, a bus bar), or may be formed of a plurality of electrically connected conductive members.
  • the output terminal block 250 is arranged next to the side wall 214.
  • the output terminal block 250 faces almost the entire area of the side wall 214.
  • the output terminal block 250 is disposed in a region defined by the side walls 212, 213, and 214.
  • the output terminal block 250 is provided so as to face the upper power module 110, the heat exchange unit 233, and the lower power module 110 in the Y direction.
  • each of the upper and lower power modules 110 overlaps with the output terminal block 250 in the projection direction in the Y direction. Then, the power module 110 is arranged next to the output terminal block 250. Thus, the wiring length between the terminal 251 and the output bus bar 150 can be reduced.
  • the output terminal block 250 has eight terminals 251 corresponding to the number of power modules 110. Two of the eight correspond to the two power modules 110 constituting the converter 6, and the remaining six correspond to the six power modules 110 constituting the inverters 7, 8.
  • Terminal 251 corresponding to converter 6 functions, for example, as a terminal for connecting reactor 260 and power module 110. Further, it can function as a terminal for monitoring an IL current described later.
  • Terminals 251 corresponding to inverters 7 and 8 function as terminals for outputting a desired AC voltage to motor generators 3 and 4 as loads. Therefore, it corresponds to the output wiring 15 shown in FIG.
  • the housing 252 is formed using an electrically insulating material, for example, a resin material.
  • a housing 252 made of a resin material is formed integrally with the terminal 251.
  • the housing 252 has a substantially rectangular parallelepiped shape whose longitudinal direction is the X direction.
  • the housing 252 (output terminal block 250) is fixed to the case 210 via support portions 253 arranged at both ends in the Y direction.
  • a current sensor (not shown) is sealed in the housing 252.
  • a current sensor provided at terminal 251 corresponding to converter 6 detects a current (IL current) flowing through boosting wiring 14.
  • Current sensors provided at terminals 251 corresponding to inverters 7 and 8 detect a phase current.
  • the detection signal of the current sensor is output to the control board 290 via a conductive member such as a bus bar.
  • the housing 252 may not have the current sensor.
  • the terminal 251 has a first connection part 251a and a second connection part 251b.
  • the first connection portion 251a protrudes from one surface of the housing 252, and the second connection portion 251b is exposed on the back surface opposite to the one surface.
  • the first connection portion 251a and the second connection portion 251b are electrically connected inside the housing 252.
  • the first connection portion 251a protrudes from one surface of the housing 252 and extends in the Y direction.
  • the output bus bar 150 (the narrow portion 152) of the power module 110 is connected to the first connection portion 251a.
  • the housing 252 has a protrusion 252a on one surface of the power module 110 side.
  • the housing 252 has five protrusions 252a.
  • the protrusion 252a projects in the Y direction with a predetermined height in the Z direction.
  • the first connection portion 251a protrudes from the protrusion 252a.
  • the first connection portions 251a to which the upper output bus bar 150 is connected are provided on the four protrusions 252a from the side wall 213 side.
  • the first connection portion 251a to which the lower output bus bar 150 is connected is provided on each of the four protrusions 252a from the side wall 214 side.
  • On the protruding portion 252a closest to the side wall 212 only the first output portion 251a corresponding to the lower output bus bar 150, specifically, the output bus bar 150 of the converter 6b is provided.
  • the second connection portion 251b is exposed from the surface of the housing 252 opposite to the first connection portion 251a, that is, the surface facing the side wall 214.
  • the six second connection portions 251b on the side wall 213 side in the Y direction are electrically connected to the output bus bars 150 of each phase constituting the inverters 7, 8.
  • These second connection portions 251b face openings 218 provided in the side wall 214. Thereby, it can be electrically connected to three-phase windings of motor generators 3 and 4 through opening 218.
  • the remaining two, that is, the two second connection portions 251b on the side wall 212 side can be used, for example, as output portions of a current sensor that detects an IL current.
  • a seal member (not shown) is interposed between the periphery of the opening 218 and the output terminal block 250 in the case 210 to form a waterproof seal portion.
  • Reactor 260 constitutes reactors R1 and R2 of converter 6.
  • Reactor 260 is arranged on an arm different from power module 110 among the two arms of heat exchange section 233.
  • the reactor has two reactors 260, one of which constitutes a reactor R1, and the other one which constitutes a reactor R2.
  • the reactor 260 on the R1 side is disposed on one surface 233a of the heat exchange unit 233, and the reactor 260 on the R2 side is disposed on the back surface 233b.
  • Reactor 260 is fixed to heat exchange unit 233 by screw fastening or the like.
  • the reactor 260 on the R1 side and the reactor 260 on the R2 side are arranged so as to be substantially coincident in a projection view in the Z direction.
  • Reactor 260 is arranged alongside capacitor unit 270 in the X direction. Reactor 260 is arranged on side wall 212 side. The power module 110 is disposed between the reactor 260 and the capacitor unit 270 and the output terminal block 250 in the Y direction.
  • the reactor 260 has a first terminal 261 and a second terminal 262 as external connection terminals.
  • the first terminal 261 is a terminal that is electrically connected to the positive electrode of the DC power supply 2 and the positive electrode of the filter capacitor C3.
  • Second terminal 262 is a terminal that is electrically connected to output bus bar 150 of power module 110 constituting converter 6.
  • the main body of reactor 260 has a substantially rectangular planar shape whose longitudinal direction is the Y direction. Then, the first terminal 261 and the second terminal 262 protrude from the longitudinal side facing the side wall 212 with the thickness direction being the Y direction.
  • the capacitor unit 270 forms the smoothing capacitor C2 and the filter capacitor C3.
  • Capacitor unit 270 contains, for example, a film capacitor in a case.
  • the condenser unit 270 is arranged on the same arm as the reactor 260 among the two arms of the heat exchange unit 233.
  • the capacitor unit 270 is fixed to the heat exchange unit 233 by screwing or the like.
  • the condenser units 270 are arranged on one surface 233a and the back surface 233b of the heat exchange unit 233.
  • the one surface 233a side is also referred to as an upper stage
  • the back surface 233b is also referred to as a lower stage.
  • the upper capacitor unit 270 includes a part of the smoothing capacitor C2 and a filter capacitor C3, and the lower capacitor unit 270 includes the smoothing capacitor C2.
  • the upper-stage capacitor unit 270 and the lower-stage capacitor unit 270 are arranged so as to substantially coincide with each other when viewed in the Z direction.
  • the capacitor unit 270 is disposed on the side of the side wall 213 with respect to the reactor 260.
  • the capacitor unit 270 has a positive terminal 271 and a negative terminal 272 as external connection terminals.
  • the positive terminal 271 is a terminal that is electrically connected to the VH line 12H.
  • the negative terminal 272 is a terminal that is electrically connected to the N line 13.
  • the capacitor unit 270 has a substantially rectangular planar shape whose longitudinal direction is the X direction.
  • the positive electrode terminal 271 and the negative electrode terminal 272 protrude from the central portion of the long side facing the side wall 214 with the thickness direction being the Z direction.
  • the common wiring portions 132 and 142 of the positive terminal 271 and the negative terminal 272 and the power module 110 protrude from surfaces facing each other in the Y direction.
  • the positive terminal 271 and the negative terminal 272 and the common wiring portions 132 and 142 of the power module 110 extend so as to approach each other in the Y direction.
  • the positive terminal 271 and the negative terminal 272 face each other in the Z direction. Thereby, the inductance of the main circuit wiring can be reduced.
  • the positive electrode terminal 271 and the negative electrode terminal 272 are arranged at positions farther from the heat exchange unit 233 than the common wiring units 132 and 142 of the power module 110 in the Z direction.
  • the common wiring section 142 of the N bus bar 140, the common wiring section 132 of the P bus bar 130, the negative terminal 272, and the positive terminal 271 are arranged in this order from the side near the one surface 233a of the heat exchange section 233. I have.
  • the common wiring section 142 of the N bus bar 140, the common wiring section 132 of the P bus bar 130, the negative terminal 272, and the positive terminal 271 are arranged in this order from the side near the back surface 233b of the heat exchange section 233.
  • the capacitor unit 270 has an external connection terminal (not shown) in addition to the positive terminal 271 and the negative terminal 272.
  • This external connection terminal is a terminal that is electrically connected to the VL line 12L.
  • the bus bar 280 electrically connects the other elements constituting the power converter 5.
  • the bus bar 280 is formed by processing, for example, pressing a metal plate having excellent conductivity such as copper.
  • the bus bar 280 has a VL bus bar 281, an N bus bar 282, an IL bus bar 283, and a VH bus bar 284. Each bus bar 280 is housed in case 210.
  • the VL bus bar 281 forms the VL line 12L.
  • the VL bus bar 281 connects the positive terminal 241 of the input terminal block 240 and the reactor 260 and also connects the positive terminal 241 and the capacitor unit 270.
  • the VL bus bar 281 is disposed on the mounting surface 245a of the input terminal block 240 such that the thickness direction is substantially parallel to the Z direction. In this arrangement, the VL bus bar 281 is electrically connected to the positive terminal 241 by screwing.
  • the VL bus bar 281 is branched into a plurality.
  • One of the branched VL bus bars 281 is bent so that the thickness direction becomes the X direction with respect to the fixed portion to the input terminal block 240, and is connected to the first terminal 261 of the reactor 260 on the R1 side.
  • Another one of the branched VL bus bars 281 is a Y-direction extending portion extending from the fixed portion of the input terminal block 240 to the side wall 215 along the long side of the reactor 260 on the R1 side, and a short portion of the reactor 260 on the R1 side. It has an X-direction extending portion extending in the X direction between the side and the side wall 215 and connected to the capacitor unit 270.
  • the Y-direction extending portion has a bent portion before the boundary with the X-direction extending portion, and the thickness direction is switched in the X direction by the bent portion.
  • the plate thickness direction of the X-direction extending portion is substantially parallel to the Y direction.
  • Another branched VL bus bar 281 extends from the bent portion of the Y-direction extending portion to the bottom wall 211 side in the Z direction, and is connected to the first terminal 261 of the reactor 260 on the R2 side.
  • the ⁇ ⁇ N bus bar 282 forms the N line 13.
  • the N bus bar 282 is arranged on the mounting surface 245b of the input terminal block 240 such that the thickness direction is substantially parallel to the Z direction, as shown in FIGS. In this arrangement, N bus bar 282 is electrically connected to negative electrode terminal 242 by screwing. As shown in FIGS. 37 and 41, the N bus bar 282 extends from the portion fixed to the input terminal block 240 toward the side wall 214 in the Y direction with the same thickness direction. Then, in a region overlapping with the cutout portion 235 of the heat exchange portion 233 in the projection view in the Z direction, the plate is bent so that the plate thickness direction is substantially parallel to the Y direction.
  • a bent portion of the N bus bar 282 whose thickness direction is substantially parallel to the Y direction is a common wiring of the power modules 110 constituting the converters 6a and 6b in the X direction as shown in FIG. It extends to a position closer to the side wall 212 than the portion 142 (N bus bar 140).
  • the bent portion of the N bus bar 282 extends to a position closer to the side wall 213 than the common wiring portion 142 (N bus bar 140) of the power module 110 constituting the U phase of the inverters 7 and 8.
  • the bent portion of the N bus bar 282 is provided from the upper negative electrode terminal 272 to the lower negative electrode terminal 272 in the Z direction.
  • the N bus bar 282 has a predetermined width in the Z direction and extends in the X direction.
  • Each of the negative terminals 272 of the capacitor unit 270 and each of the common wiring portions 142 of the power module 110 are connected to the bent portion of the N bus bar 282.
  • the N bus bar 282 is connected to the capacitor unit 270 and the power module 110 in a region overlapping with the cutout portion 235 in the projection view in the Z direction. That is, the N line 13 is connected to the smoothing capacitor C2, the filter capacitor C3, and the common wiring 11N of each of the upper and lower arm circuits 10.
  • IL bus bar 283 forms boosting wiring 14.
  • IL bus bar 283 connects second terminal 262 of reactor 260 and output bus bar 150 of power module 110 constituting converter 6.
  • two IL bus bars 283 are provided.
  • One of the IL bus bars 283 connects the second terminal 262 of the reactor 260 on the R1 side and the output bus bar 150 of the power module 110 constituting the converter 6a on one surface 233a side.
  • Another one of the IL bus bars 283 connects the second terminal 262 of the reactor 260 on the R2 side and the output bus bar 150 of the power module 110 constituting the converter 6b on the back surface 233b side.
  • the IL bus bar 283 extends from the connection portion with the second terminal 262 to the power module 110 side, and is bent with respect to the first extension portion and extends to the side wall 212 side in the Y direction. And at least a third extending portion extending from the second extending portion to the side wall 214 along the side wall 212.
  • IL bus bar 283 may be directly connected to output bus bar 150, or may be connected to output bus bar 150 via terminal 251.
  • the VH bus bar 284 forms the VH line 12H. As shown in FIG. 37 and the like, the VH bus bar 284 is arranged in a region overlapping with the cutout portion 235 in a projection view from the Z direction. The VH bus bar 284 is arranged in a region overlapping the cutout 235 such that the thickness direction is substantially parallel to the Y direction. As shown in FIG. 37, the VH bus bar 284 extends in the X direction to a position closer to the side wall 212 than the common wiring part 132 (P bus bar 130) of the power modules 110 that constitute the converters 6a and 6b.
  • the VH bus bar 284 extends to a position closer to the side wall 213 than the common wiring portion 132 (P bus bar 130) of the power module 110 constituting the U phase of the inverters 7 and 8. As shown in FIGS. 42 and 43, the VH bus bar 284 is provided from the upper positive terminal 271 to the lower positive terminal 271 in the Z direction. As described above, the VH bus bar 284 extends in the X direction while having a predetermined width in the Z direction.
  • the VH bus bar 284 is connected to each of the positive terminals 271 of the capacitor unit 270 and each of the common wiring portions 132 of the power module 110. As described above, the VH bus bar 284 is connected to the capacitor unit 270 and the power module 110 in a region overlapping with the cutout portion 235 in the projection view in the Z direction. That is, the VH line 12H is connected to the smoothing capacitor C2 and the common wiring 11P of each of the upper and lower arm circuits 10.
  • the VH bus bar 284 includes the bent portion of the N bus bar 282 in the projection view in the Y direction. That is, the entire bent portion of N bus bar 282 faces VH bus bar 284 in the Y direction. Thereby, the inductance of the main circuit wiring can be reduced.
  • the bent portion of N bus bar 282 is arranged on reactor 260 and capacitor unit 270 side, and VH bus bar 284 is arranged on power module 110 side. For this reason, in the power module 110, the length of the common wiring portion 142 protruding from the side surface 183 is longer than that of the common wiring portion 132.
  • the positive terminal 271 is longer than the negative terminal 272.
  • the control circuit section 9 is formed on the control board 290.
  • the control board 290 is formed by mounting electronic components on a printed board.
  • the control board 290 includes a microcomputer as an electronic component.
  • the control board 290 also has a connector 291 mounted thereon.
  • the control circuit unit 9 is electrically connected to a host ECU and the like through a connector 291.
  • Such a connector 291 is also called a low-voltage connector.
  • the control board 290 (printed board) has a substantially rectangular plane with the X direction as a length. In the X direction, the control board 290 has a length substantially equal to or slightly shorter than the length from the inner surface of the side wall 212 to the inner surface of the side wall 213. The control board 290 is arranged to be biased toward the side wall 214 in the Y direction. The control board 290 is provided so as to overlap the output terminal block 250, the power module 110, and the cutout portion 235 of the heat exchange unit 233 in the Y direction, and not to overlap the reactor 260 and the capacitor unit 270. The control board 290 is housed in the cover 220 as shown in FIG.
  • the connector 291 is mounted near the end in the X direction, specifically, near the end on the side wall 213 side.
  • the connector 291 is inserted and mounted on the control board 290.
  • the connector 291 projects from an opening formed between the recess 227 and the case 210 in a state where the case 210 and the cover 220 are assembled.
  • a sealing member (not shown) is interposed between the housing of the connector 291, the case 210, and the cover 220 to form a waterproof seal portion.
  • the external connection terminal 170 of the power module 110 is connected to the control board 290.
  • the external connection terminal 170 is inserted and mounted on the control board 290.
  • the external connection terminal 170 is mounted on the control board 290 in a region overlapping with the cutout portion 235 in the projection view in the Z direction. That is, it is mounted on one end side in the Y direction, specifically near the end on the side wall 215 side.
  • the external connection terminal 170 of the power module 110 protrudes from the side surface 183 in the Y direction, is bent at an angle of about 90 degrees, and extends to the bottom wall 221 side of the cover 220. I have.
  • the portion protruding from the side surface 183 is substantially L-shaped. Since the control board 290 is arranged on the cover 220 side, the extension length of the external connection terminals 170 is longer in the lower power module 110 than in the upper power module 110. The lower external connection terminal 170 passes through the notch 235. The bent portion is located at a position closer to the reactor 260 and the capacitor unit 270 in the lower stage than in the upper stage so that the upper, lower, and external connection terminals 170 do not interfere with each other. Thus, on the control board 290, the mounting positions of the external connection terminals 170 are two levels in the Y direction. The end of the substrate is the lower mounting position.
  • FIG. 45 is a schematic diagram showing an arrangement of a cooler, a power module, a reactor, and a condenser unit.
  • FIG. 46 is a schematic sectional view showing a flow path.
  • the power module 110 includes one semiconductor device 20 for convenience.
  • the heat exchange part 233 of the cooler 230 has a substantially U-shaped plane.
  • the power module 110 is disposed on one of the U-shaped arms 233c of the heat exchange unit 233.
  • a reactor 260 and a capacitor unit 270 are arranged on another arm 233d.
  • the arm 233c has a longer length in the X direction than the arm 233d, and the arm 233d has a longer length in the Y direction than the arm 233c.
  • the X direction is the longitudinal direction in each of the arms 233c and 233d.
  • the heat exchange section 233 of the cooler 230 has a channel 234 inside.
  • the heat exchange part 233 has partition parts 237 and 238 inside in addition to the notch part 235.
  • the partition 237 is provided on the arm 233c.
  • the partition 237 extends in the X direction, and divides the flow path 234 in the arm 233c into two regions in the Y direction.
  • the partition portion 237 divides the flow path 234 into an upstream area 234a connected to the flow path of the supply pipe 231 and a downstream area 234b connected to the flow path of the discharge pipe 232.
  • the supply pipe 231 is connected to the heat exchange unit 233 on a side opposite to both ends of the U-shape with respect to the heat exchange unit 233.
  • the upstream region 234a and the downstream region 234b extend in the X direction.
  • the upstream region 234a has one end connected to the flow path of the supply pipe 231 and the other end having a dead end at the tip end of the arm 233c.
  • the downstream region 234b has a dead end on the tip side of the arm 233c, and the other end is connected to the arm 233d side.
  • the length in the Y direction that is, the width is larger in the upstream region 234a than in the downstream region 234b.
  • the partition 238 is provided on the arm 233d.
  • the partition 238 extends in the X direction from a wall surface opposite to both ends of the U-shape.
  • the flow path 234 (downstream area 234b) in the arm 233d has a folded structure.
  • the discharge pipe 232 is connected to the heat exchange unit 233 on the opposite side to both ends of the U-shape with respect to the heat exchange unit 233.
  • the flow path of the discharge pipe 232 is connected to the end of the folded structure, that is, the end of the flow path 234.
  • a notch 235 is provided between the arms 233c and 233d.
  • the notch 235 functions similarly to the partition 238. Due to the cutout portion 235 and the partition portion 238, the downstream region 234b of the flow path 234 has a meandering shape.
  • the reactor 260 and the capacitor unit 270 can be effectively cooled while cooling all the power modules 110 arranged in the X direction. Further, since the power module 110, the reactor 260, and the capacitor unit 270 face each other with the notch 235 interposed therebetween, the connection structure including the bus bar 280 can be simplified while cooling effectively.
  • the plurality of power modules 110 are arranged on the arm 233c from the supply pipe 231 side in the order of configuring the U-phase, V-phase, W-phase, and the converter 6 of the inverters 7, 8. Specifically, on one surface 233a, the U-phase, the V-phase, the W-phase of the inverter 7 and the converter 6a are arranged in this order from the supply pipe 231 side. In addition, on the back surface 233b, the U-phase, V-phase, W-phase of the inverter 8 and the converter 6b are arranged in this order from the supply pipe 231 side.
  • the plurality of power modules 110 are arranged side by side along the flow direction of the refrigerant in the arm 233c. In FIG. 45, the flow of the refrigerant is indicated by solid arrows.
  • the reactor 260 and the capacitor unit 270 are arranged on the arm 233d in the X direction. Specifically, on one surface 233a, the condenser unit 270 and the reactor 260 on the R1 side are arranged in this order from the discharge pipe 232 side. Further, on the back surface 233b, the condenser unit 270 and the reactor 260 on the R2 side are arranged in this order from the discharge pipe 232 side.
  • the power module 110 has the cooler 120.
  • the power module 110 has a structure shown in FIG. That is, the capacitor C ⁇ b> 1, the first-stage heat exchange unit 123, the semiconductor device 20, the second-stage heat exchange unit 123, and the drive board 160 are arranged in this order from one surface 181 side of the protection member 180.
  • the upstream area 234a and the downstream area 234b communicate with each other via the flow path 126 of the power module 110.
  • One flow path is formed by the upstream area 234a of the flow path 234, the flow path 126, and the downstream area 234b of the flow path 234. Therefore, the same refrigerant flows through the flow paths 126 and 234.
  • the power module 110 is disposed on one surface 233 a and the back surface 233 b of the heat exchange unit 233.
  • the supply pipe 121 and the discharge pipe 122 of the cooler 120 provided in the power module 110 protrude in the Z direction from one surface 181 of the protection member 180.
  • the supply pipe 121 is inserted into the through-hole 233e connected to the upstream area 234a, and heat exchange with the supply pipe 121 is performed in a state where the flow path of the supply pipe 121 is connected to the flow path 234 (upstream area 234a).
  • the unit 233 is connected.
  • the connecting portion between the supply pipe 121 and the heat exchange unit 233 is liquid-tightly sealed by an annular elastic member (for example, an O-ring), a liquid sealing material before curing, welding, or the like.
  • the discharge pipe 122 is inserted into the through hole 233f connected to the downstream area 234b, and the discharge pipe 122 and the heat exchange unit are connected in a state where the flow path of the discharge pipe 122 is connected to the flow path 234 (downstream area 234b). 233 are connected.
  • the connection between the discharge pipe 122 and the heat exchange section 233 is also sealed in a liquid-tight manner.
  • the refrigerant flows as shown below.
  • the refrigerant supplied from the supply pipe 231 of the cooler 230 to the flow path 234 flows through the upstream region 234a toward the tip (U-shaped tip) of the arm 233c.
  • the refrigerant flows from the upstream region 234a to the downstream region 234b through the flow path 126 of the power module 110.
  • the components of the power module 110 for example, the semiconductor device 20 and the capacitor C1 are cooled.
  • the refrigerant flows from the upstream area 234a to each of the two-stage heat exchange sections 123 through the supply pipe 121, and is discharged from the discharge pipe 122 to the downstream area 234b.
  • the supply pipe 121 and the discharge pipe 122 are provided at diagonal positions with respect to the heat exchange section 123 having a substantially rectangular planar shape. Further, the supply pipe 121 is located closer to the supply pipe 231 in the X direction than the discharge pipe 122. Therefore, the refrigerant flows through the flow path 126 in the heat exchange section 123 as shown by the broken arrows in FIGS.
  • the power conversion device 5 includes a cooler 230 and a plurality of power modules 110 constituting a power conversion unit.
  • the power module 110 includes not only the semiconductor device 20 forming the upper and lower arm circuits 10 but also a capacitor C1 connected in parallel to the upper and lower arm circuits 10.
  • the capacitor C1 is provided for each power module 110, in other words, for each of the upper and lower arm circuits 10.
  • the semiconductor device 20 and the capacitor C1 are arranged side by side in the Z direction.
  • the power module 110 having such a configuration is arranged on both surfaces of the one surface 233a and the back surface 233b of the cooler 230 (heat exchange unit 233).
  • the power modules 110 arranged on each surface are cooled by the cooler 230. Therefore, the size of the power converter 5 can be reduced in the direction orthogonal to the Z direction while cooling the semiconductor device 20.
  • the capacitor can be arranged near the semiconductor device. Therefore, the inductance of the wiring connecting the semiconductor device and the capacitor can be reduced, and the surge voltage can be suppressed.
  • the length of the heat exchange unit 233 in the Z direction is shorter than the minimum length in the X direction orthogonal to the Z direction and the minimum length in the Y direction.
  • the cooler 230 has a thin flat shape. Therefore, the temperature distribution of the refrigerant in the thickness direction in the flow path 234, specifically, a temperature difference between the surface layer on the one surface 233a side and the surface layer on the back surface 233b hardly occurs. Thereby, each of the power modules 110 arranged on both sides can be effectively cooled.
  • the power module 110 also includes the cooler 120.
  • the flow path 126 of the cooler 120 is connected to the flow path 234 such that the refrigerant returns from the flow path 234 of the cooler 230 to the flow path 234 via the flow path 126.
  • the refrigerant is drawn from the cooler 230 into the cooler 120 in the power module 110, and the semiconductor device 20 can be cooled in the power module 110.
  • Semiconductor device 20 is arranged on one surface of cooler 120. Cooler 120 is arranged closer to semiconductor device 20 than cooler 230. Therefore, the semiconductor device 20 can be cooled effectively.
  • a capacitor C1 is arranged on the side opposite to the semiconductor device 20. Therefore, the condenser C1 can also be cooled effectively.
  • the cooler 230 corresponds to a first cooler
  • the flow path 234 corresponds to a first flow path
  • the cooler 120 corresponds to a second cooler
  • the flow path 126 corresponds to a second flow path.
  • the flow path 234 of the cooler 230 is divided into an upstream area 234a and a downstream area 234b.
  • the flow path 126 of the power module 110 connects the upstream area 234a and the downstream area 234b. According to this, the refrigerant easily flows into the flow path 126 side of the cooler 120. Therefore, the semiconductor device 20 and the capacitor C1 can be cooled more effectively.
  • the power module 110 may be arranged in the heat exchange unit 233 having the undivided flow path 234 and the flow path 126 may be connected.
  • FIG. 47 corresponds to FIG.
  • the cross-sectional area of the flow path 126 is smaller than the flow path 234 in the flow direction of the refrigerant.
  • the flow path 234 of the cooler 230 is a main flow path common to the plurality of power modules 110, and the flow path 126 of the cooler 120 is a sub flow path. Therefore, as shown in this example, it is preferable to adopt a configuration in which the refrigerant easily flows into the cooler 120 side.
  • the cooler 230 has a connection region connecting the upstream region 234a and the downstream region 234b, and the cross-sectional area of the connection region is smaller than that of the upstream region 234a or the downstream region 234b. May be.
  • the connection region By having the connection region, the resistance that flows from the upstream region 234a to the downstream region 234b is increased, and it is easy to flow to the cooler 120 side.
  • this example is more effective.
  • the heat exchanger 123 of the cooler 120 is arranged in two stages. That is, the cooler 120 is branched into two stages in the Z direction.
  • the heat transfer coefficient of the cooler 120 (the heat exchange unit 123) is higher than that of the cooler 230 (the heat exchange unit 233) by providing inner fins or the like.
  • the semiconductor device 20 is sandwiched between the two stages of the heat exchange unit 123, and the capacitor C ⁇ b> 1 is arranged on the opposite side of the semiconductor device 20 with respect to at least one of the two stages of the heat exchange unit 123. According to this, the semiconductor device 20 can be cooled from both sides in the Z direction by the two-stage heat exchange section 123. Therefore, the semiconductor device 20 can be cooled more effectively.
  • the condenser C1 can be cooled by the heat exchange section 123.
  • the condenser C ⁇ b> 1 is disposed between the first-stage heat exchange unit 123 near the cooler 230 and the heat exchange unit 233. Therefore, the condenser C1 can be effectively cooled.
  • the capacitor C1 is disposed on the side opposite to the semiconductor device 20 with respect to one of the two stages of the heat exchange unit 123, and the driving substrate 160 is mounted on the other of the two stages of the heat exchange unit 123. And are located on the opposite side. Then, the signal terminal 80 of the semiconductor device 20 is connected to the drive substrate 160. According to this, the drive board 160 can be cooled while the physique in the direction orthogonal to the Z direction is reduced in size. Further, the signal terminal 80 can be shortened. Since the semiconductor device 20 and the drive substrate 160 can be connected over a short distance, it is possible to suppress a delay in on / off timing of the switching elements Q1 and Q2. In addition, noise resistance can be improved.
  • the power conversion device 5 includes a capacitor unit 270 including a smoothing capacitor C2, together with a plurality of power modules 110 constituting the inverters 7 and 8.
  • the capacitance of the smoothing capacitor C2 is set to be larger than the capacitance of the capacitor C1 of each power module 110.
  • the smoothing capacitor C2 since the smoothing capacitor C2 is provided separately from the capacitor C1, the capacitor C1 has a function of supplying a charge required for switching of the switching elements Q1 and Q2 constituting the upper and lower arm circuits 10 connected in parallel. Good. Therefore, the physique of the capacitor C1 can be reduced. Further, by providing the smoothing capacitor C2, it is possible to suppress the fluctuation of the DC voltage.
  • the capacitor C1 and the upper and lower arm circuits 10 are connected to the VH line 12H and the N line 13, which are power lines, via the common wires 11P and 11N.
  • the capacitor C1 and the upper and lower arm circuits 10 are connected to the VH bus bar 284 and the N bus bar 282 via the common wiring sections 132 and 142. Therefore, the surge voltage can be suppressed.
  • the capacitor C1 corresponds to a first capacitor
  • the smoothing capacitor C2 corresponds to a second capacitor.
  • the condenser units 270 constituting the smoothing condenser C2 are arranged on both surfaces of the heat exchange section 233 of the cooler 230, respectively.
  • the cooler 230 is arranged between the condenser units 270 in the Z direction. Therefore, it is possible to effectively cool the capacitor unit 270 including the smoothing capacitor C2 while reducing the size in the direction orthogonal to the Z direction.
  • the cooler 230 has a cutout portion 235 that divides a region where the power module 110 is disposed and a region where the capacitor unit 270 including the smoothing capacitor C2 is disposed.
  • the VH bus bar 284 constituting the VH line 12H, the power module 110, and the capacitor unit 270 Can be simplified. Therefore, the inductance of the main circuit wiring can be reduced. Further, the connection between the power module 110 and the control board 290 can be simplified, for example, the connection can be made over a short distance.
  • the power conversion device 5 includes the reactor 260 and the power module 110 that constitute the converter 6.
  • the reactor 260 and the capacitor unit 270 are arranged side by side in one direction orthogonal to the Z direction.
  • reactor 260 and capacitor unit 270 are arranged near each other.
  • the physique of the power converter 5 can be reduced in size.
  • the VL bus bar 281 can be shortened, so that copper loss can be reduced.
  • the reactor 260 and the capacitor unit 270 are arranged side by side in the X direction, which is the direction in which the plurality of power modules 110 are arranged. By arranging the arrangement directions in this manner, the physique of the power converter 5 can be reduced in size.
  • the reactor 260 and the capacitor unit 270 face the power module 110 in the Y direction.
  • Each of the power modules 110 overlaps with at least one of the reactor 260 and the capacitor unit 270 in the projection view in the Y direction.
  • the distance between the power module 110, the reactor 260, and the capacitor unit 270 is reduced, and the connection distance from the power module 110 to the capacitor unit 270 via the IL bus bar 283, the N bus bar 282, and the VH bus bar 284 can be reduced. . Thereby, copper loss can be reduced.
  • a multi-phase converter including a plurality of reactors R1 and R2 is employed.
  • the reactor 260 on the R1 side is disposed on one surface 233a of the heat exchange unit 233, and the reactor 260 on the R2 side is disposed on the back surface 233b. That is, reactors 260 are arranged on both surfaces of cooler 230. Therefore, reactor 260 can be effectively cooled while the physique in the direction orthogonal to the Z direction is reduced in size.
  • the power module 110 is disposed upstream of the flow channel 234, and the reactor 260 and the capacitor unit 270 are disposed downstream of the power module 110 in the flow channel 234. According to this, not only the power module 110 but also the reactor 260 and the condenser unit 270 can be effectively cooled.
  • the power module 110 having a large temperature change per unit time specifically, the semiconductor chip 40 on which the switching elements Q1 and Q2 are formed, has a lower temperature than the reactor 260 and the capacitor unit 270 having a smaller temperature change per unit time. Cooling can be effectively performed by the low refrigerant.
  • the power module 110 applied to the power converter 5 is not limited to the configuration shown in this example.
  • a power module 110 including the semiconductor device 20 having a 2-in-1 package structure can be adopted.
  • the arrangement of the main terminals 70 may be other than the example.
  • the semiconductor device 20 is disposed between the two stages of the heat exchange sections 123, but the present invention is not limited to this.
  • the capacitor C1 may be arranged between the two stages of the heat exchange units 123, and the semiconductor device 20 may be arranged between the heat exchange unit 233 and the first stage heat exchange units 123.
  • the protection member 180 is interposed between the semiconductor device 20 and the cooler 230, it is preferable to cool the semiconductor device 20 having a large temperature change per unit time between the two-stage heat exchange units 123.
  • the arrangement of the plurality of power modules 110 is not limited to the above example.
  • some of the power modules 110 constituting the inverter 7 are arranged on one surface 233a of the heat exchange unit 233, and the remaining power modules 110 are arranged on the back surface 233b.
  • Some power modules 110 constituting the inverter 8 are arranged on one surface 233a of the heat exchange unit 233, and the remaining power modules 110 are arranged on a back surface 233b.
  • the four power modules 110 constituting the converter 6a, the U-phase and V-phase of the inverter 7, and the W-phase of the inverter 8 are arranged on one surface 233a.
  • On the back surface 233b four power modules 110 constituting the converter 6b, the W phase of the inverter 7, and the U phase and the V phase of the inverter 8 are arranged.
  • the semiconductor device 20 is on the side of the cooler 230, but the present invention is not limited to this.
  • the condenser C1 may be arranged between the heat exchange units 123 and 233. However, it is preferable to cool the semiconductor device 20 having a large temperature change per unit time between the heat exchange units 123 and 233.
  • the output bus bar 150 of the power module 110 constituting the converter 6 and the IL bus bar 283 may be directly connected without using the terminal 251 of the output terminal block 250. That is, the output terminal block 250 may be provided with terminals 251 for the inverters 7 and 8.
  • This embodiment can refer to the preceding embodiment. Therefore, the description of the parts common to the drive system 1, the power conversion device 5, the semiconductor device 20, and the power module 110 shown in the preceding embodiment will be omitted.
  • the heat exchanger 123 is arranged in one stage.
  • FIG. 49 corresponds to FIG.
  • the power modules 110 are arranged on both surfaces of the one surface 233a and the back surface 233b of the heat exchange unit 233 of the cooler 230.
  • the semiconductor device 20 is arranged between the heat exchange units 123 and 233, and the capacitor C1 connected in parallel to the semiconductor device 20 is arranged on the opposite side of the heat exchange unit 123 from the semiconductor device 20.
  • the power module 110 does not include the drive board 160.
  • Other configurations are the same as those of the preceding embodiment (for example, see FIG. 46).
  • the semiconductor device 20 and the capacitor C1 are arranged side by side in the Z direction. Then, the power module 110 having such a configuration is arranged on both surfaces of the one surface 233a and the back surface 233b of the cooler 230 (heat exchange unit 233). Therefore, the size of the power converter 5 can be reduced in the direction orthogonal to the Z direction while cooling the semiconductor device 20.
  • the semiconductor device 20 is disposed closer to the heat exchange unit 233 than the capacitor C1. Therefore, the semiconductor device 20 can be effectively cooled by the heat exchange unit 233 of the cooler 230.
  • the cooler 230 (heat exchange part 233) has a thin flat shape. Since the temperature difference of the refrigerant hardly occurs in the Z direction, each of the power modules 110 arranged on both sides can be effectively cooled.
  • the semiconductor device 20 is disposed between the heat exchange units 123 and 233. Therefore, the semiconductor devices 20 can be cooled from both sides in the Z direction by the heat exchange units 123 and 233. Thereby, the semiconductor device 20 can be cooled more effectively.
  • the condenser C1 can also be cooled by the heat exchange unit 123.
  • the heat exchange section 233 is not particularly limited to the configuration shown in FIG.
  • a configuration having an undivided flow channel 234 or a configuration having a connection region may be adopted.
  • the semiconductor device 20 is on the side of the cooler 230, but the present invention is not limited to this.
  • the condenser C1 may be arranged between the heat exchange units 123 and 233. However, it is preferable to cool the semiconductor device 20 having a large temperature change per unit time between the heat exchange units 123 and 233.
  • the power module 110 does not include the cooler 120 and the drive board 160. Also in the present embodiment, the power modules 110 are arranged on both surfaces of the one surface 233a and the back surface 233b of the heat exchange unit 233 of the cooler 230. Then, the semiconductor device 20 is arranged on the cooler 230 side. Further, the heat exchange part 233 of the cooler 230 is not partitioned between the upstream and the downstream. Other configurations are the same as those of the preceding embodiment (for example, see FIG. 46).
  • the semiconductor device 20 and the capacitor C1 are arranged side by side in the Z direction. Then, the power module 110 having such a configuration is arranged on both surfaces of the one surface 233a and the back surface 233b of the cooler 230 (heat exchange unit 233). Therefore, the size of the power converter 5 can be reduced in the direction orthogonal to the Z direction while cooling the semiconductor device 20.
  • the semiconductor device 20 is disposed closer to the heat exchange unit 233 than the capacitor C1. Therefore, the semiconductor device 20 can be effectively cooled by the heat exchange unit 233 of the cooler 230.
  • the cooler 230 (heat exchange part 233) has a thin flat shape. Since the temperature difference of the refrigerant hardly occurs in the Z direction, each of the power modules 110 arranged on both sides can be effectively cooled.
  • the semiconductor device 20 is on the side of the cooler 230, but the present invention is not limited to this.
  • the condenser C1 may be on the cooler 230 side. However, it is preferable to cool the semiconductor device 20 having a large temperature change per unit time with the cooler 230 side.
  • FIG. 51 also in power conversion device 5 of the present embodiment, at least a part of each of the other elements is housed in the internal space of the housing configured by assembling case 210 and cover 220. . Most of the cooler 230 is disposed in the case 210, and a part thereof, specifically, a part of each of the supply pipe 231 and the discharge pipe 232 protrudes out of the case 210.
  • FIG. 51 shows the power converter 5 in a simplified manner.
  • the heat exchange section 233 is formed using a metal material such as aluminum.
  • the heat exchange unit 233 may be referred to as a cooling housing.
  • the heat exchange unit 233 includes a main body 2330 and a support 2233.
  • a flow path 234 is provided in the main body 2330.
  • the stopper 2343 is omitted for convenience.
  • 55 and 56 simply show the reactor 260 and the power module 110 for convenience.
  • All the power modules 110 are arranged in the main body 2330.
  • the power module 110 is disposed on each of the one surface 233a and the back surface 233b in the main body 2300.
  • the elements constituting the converter 6 are arranged on one surface 233a side of the main body 2330.
  • two power modules 110 constituting the converters 6a and 6b and two reactors 260 are arranged.
  • a reactor 260 that is a heating element different from the power module 110 disposed on the one surface 233a is disposed.
  • Reactor 260 is arranged on the opposite side of back surface 233b.
  • Six power modules 110 corresponding to the respective phases of the inverters 7 and 8 are arranged on the back surface 233b side of the main body 2330.
  • the main body 2330 has a base 2330a, a protrusion 2330b, and an inserted portion 2330c.
  • the base 2330a has a substantially rectangular planar shape whose longitudinal direction is the X direction.
  • the protrusion 2330b protrudes from the base 2330a in the Z direction.
  • the protrusion 2330b is provided on a part of the base 2330a on the one surface 233a side.
  • a portion where the protrusion 2330b is provided on the base 2330a is a thick portion, and a portion where the protrusion 2330b is not provided on the base 2330a is a thin portion.
  • the convex portion 2330b also has a substantially rectangular planar shape whose longitudinal direction is the X direction.
  • the protrusion 2330b is provided so as to include one of the four corners of the base 2330a.
  • the convex portion 2330b is provided in the X direction so as to be biased to one of two short sides of the base portion 2330a that is substantially rectangular in a plane.
  • one of the side surfaces of the convex portion 2330b is connected to one of the side surfaces of the base portion 2330a substantially flush with each other, forming a side surface 233g of the heat exchange portion 233.
  • Another side of the base 2330a forms a side 233h opposite to the side 233g.
  • the protrusion 2330b is provided to be biased to one of the two long sides of the base 2330a in the Y direction. A part of the side surface of the protrusion 2330b and the protruding tip surface form a part of the one surface 233a.
  • the inserted portion 2330c is a concave portion provided in the main body 2330. At least a part of the heating element is inserted and arranged in the inserted portion 2330c.
  • the inserted portion 2330c of the present embodiment is a bottomed hole.
  • the inserted portion 2330c is provided at a position overlapping the convex portion 2330b in a plan view from the Z direction. Inserted portion 2330c penetrates convex portion 2330b, and reaches halfway through base 2330a.
  • the inserted portion 2330c also has a substantially rectangular planar shape with the X direction as the longitudinal direction.
  • 2Two reactors 260 which are heating elements, are inserted into the inserted portion 2330c.
  • two reactors 260 R1, R2 are arranged side by side within one inserted portion 2330c.
  • reactors 260 are arranged in the X direction.
  • Each of reactors 260 is arranged with the longitudinal direction as the X direction.
  • the two reactors 260 have substantially the same structure as each other, and are arranged so that substantially the entire area overlaps (overlaps) with each other in a projection view from the X direction.
  • reactor 260 In the Z direction, most of the reactor 260 is disposed in the inserted portion 2330c, and the remaining portion projects from the inserted portion 2330c.
  • the surface of a portion of reactor 260 arranged inside inserted portion 2330c may have a gap between a part of the surface and the wall surface of inserted portion 2330c.
  • a heat conduction member (not shown) (for example, heat conduction gel) may be arranged in this gap.
  • reactor 260 can be more effectively cooled as compared with a configuration in which the heat conducting member is not provided.
  • the heat conducting member may have electrical insulation as required.
  • the two power modules 110 constituting the converter 6 are arranged in the base 2330a in a region where the protrusion 2330b is not provided, as shown in FIGS.
  • the power module 110 is arranged on an extension of the arrangement of the two reactors 260.
  • the two reactors 260 and the two power modules 110 are arranged along the X direction. In the X direction, one of the power modules 110 is arranged with a slight gap between the power module 110 and the protrusion 2330b.
  • Each of the power modules 110 arranged on the one surface 233a side has a substantially rectangular shape in plan view.
  • the power module 110 is arranged with the longitudinal direction as the Y direction.
  • the power module 110 has an output bus bar 150 at one end in the Y direction and common wiring portions 132 and 142 at the other end.
  • the power module 110 arranged on the back surface 233b side is also arranged with the longitudinal direction as the Y direction.
  • the six power modules 110 are arranged side by side in the X direction, with the longitudinal direction as the Y direction.
  • Six power modules 110 are arranged in a region directly below reactor 260 and power module 110 arranged on one surface 233a side.
  • the flow path 234 is divided into an upstream area 234a and a downstream area 234b.
  • the upstream area 234a and the downstream area 234b extend in the direction in which the power module 110 and the reactor 260 arranged on the one surface 233a side are arranged.
  • the flow path 234 extends from the side surface 233g to the opposite side surface 233h.
  • the reactor 260 is disposed between the upstream region 234a and the downstream region 234b of the flow path 234 in a direction orthogonal to the arrangement direction.
  • Reactor 260 is sandwiched between heat exchange portions 233 (main body portion 2330) arranged on both side surfaces 260a and 260b.
  • the upstream region 234a and the downstream region 234b extend substantially parallel to the X direction in which the power module 110 and the reactor 260 are arranged.
  • the reactor 260 is disposed between the upstream region 234a and the downstream region 234b in the Y direction. Inserted portion 2330c is provided between upstream region 234a and downstream region 234b.
  • an upstream region 234a is provided on the support portion 2331 side.
  • the upstream region 234a and the downstream region 234b each have an extended portion 2340 and connecting portions 2341 and 2342.
  • the extension 2340 extends along the X direction.
  • the extending portion 2340 includes a first extending portion 2340a and a second extending portion 2340b.
  • the extending portion 2340 of the upstream region 234a and the extending portion 2340 of the downstream region 234b are provided at positions overlapping each other when viewed in projection from the Y direction. In other words, they are arranged at the same position on the ZX plane.
  • the first extension 2340a is provided on the projection 2330b. One end of the first extension 2340a is open to the side surface 233g. A supply pipe 231 is connected to the open end in the upstream area 234a, and a discharge pipe 232 is connected in the downstream area 234b. The end opposite the open end is closed.
  • the first extending portion 2340a may be provided so as not to open on the side surface 233i of the convex portion 2330b opposite to the side surface 233g.
  • the first extension portion 2340a may be provided so as to open on the side surface 233i, and may be closed by a plug portion 2343 described later. The same applies to other closed parts.
  • a first extending portion 2340a of the upstream region 234a is provided on one side of the projecting portion 2330b that sandwiches the inserted portion 2330c, and a first extending portion of the downstream region 234b is provided on the other side.
  • 2340a is provided.
  • the reactor 260 is disposed between the first extension 2340a of the upstream area 234a and the first extension 2340a of the downstream area 234b.
  • the second extending portion 2340b is provided at a position closer to the back surface 233b than the first extending portion 2340a.
  • the second extension 2340b is provided on the base 2330a.
  • the second extending portion 2340b is provided so as to overlap the first extending portion 2340a in a projection view from the Z direction. Both ends of the second extension 2340b are closed.
  • the second extending portion 2340b is open to the side surface 233g, and extends in the X direction to a position short of the side surface 233h.
  • the end on the side surface 233g side is closed by the stopper 2343.
  • the second extending portion 2340b is disposed on the one surface 233a side, and extends closer to the side surface 233h than the power module 110 closer to the side surface 233h.
  • the second extension 2340b extends longer than the first extension 2340a.
  • a second extension 2340b of the upstream region 234a is provided on one side of the base 2330a that sandwiches the inserted portion 2330c, and a second extension 2340b of the downstream region 234b is provided on the other side. Is provided.
  • the reactor 260 is arranged between the second extension 2340b of the upstream area 234a and the second extension 2340b of the downstream area 234b.
  • the power module 110 is disposed immediately above the second extension 2340b of the upstream region 234a and the second extension 2340b of the downstream region 234b.
  • one end in the longitudinal direction overlaps with the second extending portion 2340b of the upstream region 234a and the other end in the longitudinal direction overlaps with the second extending portion 2340b of the downstream region 234b in the projection view from the Z direction. They are arranged to overlap.
  • the connecting portion 2341 connects different extending portions 2340 on the same area side of the flow path 234.
  • the connecting portion 2341 extends in the Z direction.
  • the connecting portion 2341 includes a first connecting portion 2341a and a second connecting portion 2341b.
  • the connecting portion 2341 of the upstream region 234a and the connecting portion 2341 of the downstream region 234b are provided at positions overlapping each other in a projection view from the Y direction. In other words, they are arranged at the same position on the ZX plane.
  • the connecting portion 2341 is provided at a position overlapping with the extending portion 2340 in a projection view from the Z direction.
  • the first connecting portion 2341a is provided on the opening end side of the first extending portion 2340a, and the second connecting portion 2341b is provided on the closing end side of the first extending portion 2340a.
  • One end of the first connecting portion 2341 is opened at the protruding tip surface of the convex portion 2330b, and is closed by the plug portion 2343.
  • the first connecting portion 2341a is connected at one end to the first extending portion 2340a, and at the other end to the second extending portion 2340b. The same applies to the second connecting portion 2341b.
  • the connecting portion 2342 is a portion of the flow path 234 that is connected to the flow path 126 of the cooler 120 provided in the power module 110.
  • the connecting portions 2342 are provided corresponding to the respective power modules 110.
  • the connecting portion 2342 is provided at a position overlapping the supply pipe 121 and the discharge pipe 122 of the power module 110.
  • the connecting portion 2342 extends in the Z direction.
  • the connecting portion 2342 has one end opened to the surface of the base 2330a of the main body 2330, and the other end connected to the second extending portion 2340b.
  • the connecting portion 2342 corresponding to the power module 110 of the converter 6 is open on one surface 233a.
  • the connecting portion 2342 corresponding to the power module of the inverters 7 and 8 is open on the back surface 233b.
  • the two-dot chain line arrow shown in FIG. 53 and the solid line arrow shown in FIG. 54 indicate the flow of the refrigerant.
  • the refrigerant flows in the order of the power modules 110.
  • the refrigerant flowing in the power module 110 flows in the downstream region 234b in the order of the connecting portion 2342 ⁇ the second extending portion 2340b ⁇ the first connecting portion 2340a and the second connecting portion 2340b ⁇ the first extending portion 2340a.
  • the support portion 2331 is integrally connected to the main body 2330.
  • the support portion 2331 extends from the main body portion 2330 in the Y direction.
  • the support portion 2331 extends in the Y direction from the long side on the convex portion 2330b side.
  • On at least one of the one surface 233a and the back surface 233b of the support portion 2331 for example, a part of elements configuring the power conversion device 5 is arranged.
  • a capacitor unit 270 (not shown) is arranged.
  • the capacitor unit 270 is arranged on at least the back surface 233b of the support portion 2331, and is fixed to the support portion 2331 by screwing or the like.
  • the capacitor unit 270 is cooled by the support portion 2331.
  • the power module 110 and the reactor 260 that is a heating element different from the power module 110 are arranged on one surface 233 a side of the heat exchange unit 233 of the cooler 230.
  • Power module 110 and reactor 260 are arranged side by side in the X direction.
  • the upstream region 234a and the downstream region 234b of the flow path 234 extend in the direction in which the power module 110 and the reactor 260 are arranged.
  • the reactor 260 is disposed between the upstream region 234a and the downstream region 234b of the flow path 234 in a direction orthogonal to the arrangement direction.
  • one side surface 260a of the reactor 260 is cooled by the refrigerant flowing through the upstream region 234a, and the side surface 260b opposite to the side surface 260a is cooled by the refrigerant flowing through the downstream region 234b.
  • the reactor 260 can be cooled from both sides 260a and 260b. Therefore, reactor 260 can be cooled more effectively than a configuration in which reactor 260 is cooled from one surface.
  • the physique in the direction orthogonal to the Z direction can be reduced in size as compared with a configuration in which cooling is performed from one surface.
  • the upstream region 234a and the downstream region 234b extend in the X direction.
  • the width W10 of the reactor 260 disposed between the upstream region 234a and the downstream region 234b is smaller than the width W11 of the power module 110. Therefore, the size of the reactor 260 in the Y direction can be reduced while effectively cooling the reactor 260.
  • the reactor 260 is disposed between the first extension 2340a of the upstream region 234a and the first extension 2340a of the downstream region 234b. Reactor 260 is sandwiched between first extending portions 2340a. Therefore, reactor 260 can be effectively cooled from both sides 260a and 260b by the refrigerant flowing through first extending portion 2340a.
  • the reactor 260 is disposed between the second extension 2340b of the upstream area 234a and the second extension 2340b of the downstream area 234b.
  • the reactor 260 is sandwiched between the second extending portions 2340b. Therefore, reactor 260 can be effectively cooled from both sides 260a and 260b by the refrigerant flowing through second extending portion 2340b.
  • Reactor 260 is also cooled by main body 2330 located on the bottom side of reactor 260, for example.
  • the power module 110 is disposed immediately above the second extension 2340b of the upstream area 234a and the second extension 2340b of the downstream area 234b. Therefore, the power module 110 can be effectively cooled by the refrigerant flowing through the second extending portion 2340b.
  • the main body 2330 is provided with the protrusion 2330b, and the protrusion 2330b is provided with the inserted portion 2330c.
  • the facing area between the heat exchange section 233 and the reactor 260 particularly the facing area between the side surfaces 260a and 260b. Therefore, reactor 260 can be effectively cooled while suppressing an increase in physique in a direction orthogonal to the Z direction.
  • the inserted portion 2330c is provided on the base 2330a.
  • reactor 260 can be arranged closer to back surface 233b than to power module 110 arranged on one surface 233a side. Therefore, it is possible to suppress the increase in the physique in the Z direction while effectively cooling the reactor 260 by increasing the facing area.
  • the power module 110 and the reactor 260 constituting the converter 6 are both arranged on one surface 233a side. Therefore, the connection structure between power module 110 and reactor 260 can be simplified, for example, the connection distance (wiring length) can be shortened.
  • the configuration of the upstream region 234a and the downstream region 234b of the flow path 234 is not limited to the example.
  • the downstream region 234b includes one extension 2340.
  • the extending portion 2340 has a wide portion 2340c having a large width in the Z direction, and a narrow portion 2340d connected to the wide portion 2340c and having a smaller width than the wide portion 2340c.
  • the upstream area 234a has the same configuration.
  • the narrow portion 2340d corresponds to a portion of the second extension 2340b provided on the base 2330a.
  • the wide portion 2340c is integrated with the main body 2330 without a portion between the first extending portion 2340a, the second extending portion 2340b, the first connecting portion 2341a, and the second connecting portion 2341b. It has a structure. That is, one wide portion 2340c is formed without a partitioning portion. According to this, the area of the flow path 234 facing the reactor 260 can be further increased, and the reactor 260 can be cooled more efficiently.
  • the downstream region 234b has one extending portion 2340.
  • the extension 2340 corresponds to the second extension 2340b.
  • the upstream region 234a has the same configuration. Since reactor 260 is sandwiched between extending portions 2340, reactor 260 can be cooled from both side surfaces 260a and 260b.
  • the present invention is not limited to this. That is, the upstream region 234a and the downstream region 234b may have different structures.
  • the heat exchange unit 233 includes the support unit 2331
  • a configuration without the support unit 2331 may be employed.
  • the capacitor unit 270 is also arranged in the main body 2330.
  • the support portion 2331 is continuous with the upstream region 234a in the Y direction.
  • the elements disposed on the support portion 2331 can be effectively cooled without providing the flow path 234 on the support portion 2331.
  • the heat exchange section 233 may not have the convex section 2330b.
  • the main body 23330 may have only the base 2330a, and the base 2330a may be provided with the inserted portion 2330c.
  • the inserted portion 2330c may be provided only on the convex portion 2330b. When an opening is formed on one of the side surfaces together with the protruding distal end surface of the projection 2330b, the inserted portion 2330c is provided as a notch.
  • the reactor 260 is shown as the heating element, the invention is not limited to this.
  • the capacitor unit 270 as a heating element may be cooled from both sides of the side surfaces 270a and 270b.
  • FIG. 59 simply shows the capacitor unit 270 for convenience.
  • Reactor 260 and capacitor unit 270 may be heating elements.
  • the reactor 260, the capacitor unit 270, and the power module 110 may be arranged in a line along the X direction.
  • the invention is not limited to this. What is necessary is just to arrange
  • a power module 110 different from the power module 110 forming the converter 6, specifically, a power module 110 forming the inverters 7 and 8 may be employed. That is, power modules having different amounts of heat may be used as the heat generator.
  • the power module 110 constituting the converter 6 may be used as a heating element, in contrast to the power module 110 constituting the inverters 7 and 8.
  • a bus bar may be used as the heating element.
  • a VL bus bar 281 or a VH bus bar 284 may be employed.
  • the invention is not limited to this.
  • the present invention can be applied to a substantially U-shaped flow path 234 in which the upstream area 234a and the downstream area 234b are integrally connected.
  • a part of the power module 110 may be inserted into the flow path 234 of the cooler 230 and immersed in the refrigerant.
  • a part of the power module 110 may be immersed in the Y direction.
  • the configuration may be such that the portion from the side surface 184 to the portion where the semiconductor device 20 and the capacitor C1 are disposed is immersed, and the side surface 183 is not immersed.
  • the output bus bar 150 may be routed inside the protection member 180 so as to protrude from the side surface 183.
  • the power converter 5 includes the polyphase converter 6, the inverters 7 and 8 for the motor generators 3 and 4, the smoothing capacitor C2, and the filter capacitor C3, the present invention is not limited to this.
  • the power conversion device 5 only needs to include at least the cooler 230 and the power modules 110 that are arranged on both surfaces of the cooler 230 and configure a power conversion unit. Therefore, a configuration including only the power module 110 constituting the converter 6 together with the cooler 230 or a configuration in which the reactor 260 and the IL bus bar 283 are added thereto can be adopted.
  • the converter 6 is not limited to a polyphase, and may be a single layer.
  • a configuration without the smoothing capacitor C2 may be adopted.
  • the capacitance of the capacitor C1 of each parallel circuit 11 is, for example, about 300 ⁇ F.
  • the embodiment, the configuration, and the aspect of the power conversion device according to an aspect of the present disclosure have been illustrated.
  • the embodiment, the configuration, and the aspect according to the present disclosure are limited to the above-described embodiment, each configuration, and each aspect. Not something.
  • embodiments, configurations, and aspects obtained by appropriately combining technical portions disclosed in different embodiments, configurations, and aspects are also included in the scope of the embodiments, configurations, and aspects according to the present disclosure.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un dispositif de conversion de courant qui peut réduire la taille dans la direction perpendiculaire à la direction de l'épaisseur tout en refroidissant le dispositif à semi-conducteur. Ce dispositif de conversion de courant comporte : un refroidisseur (230) qui présente un trajet d'écoulement (234) à travers lequel s'écoule un réfrigérant et qui présente une première surface (233a) et une surface arrière (233b) opposée à la première surface dans la direction de l'épaisseur ; et de multiples modules de courant (110), dont chacun présente un dispositif à semi-conducteur (20) constituant un circuit de bras supérieur et inférieur (10) et un condensateur (C1) agencé à côté du dispositif à semi-conducteur dans la direction de l'épaisseur et connecté en parallèle au circuit de bras supérieur et inférieur. Un module de courant est disposé à la fois sur la première surface et sur la surface arrière du refroidisseur. <u /> <u />
PCT/JP2019/022914 2018-07-25 2019-06-10 Dispositif de conversion de courant WO2020021880A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201980048836.XA CN112470389A (zh) 2018-07-25 2019-06-10 电力转换装置
DE112019003704.8T DE112019003704T5 (de) 2018-07-25 2019-06-10 Elektrische Leistungsumwandlungsvorrichtung
US17/155,729 US11653481B2 (en) 2018-07-25 2021-01-22 Electric power conversion device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018139472 2018-07-25
JP2018-139472 2018-07-25
JP2019-013377 2019-01-29
JP2019013377A JP6915633B2 (ja) 2018-07-25 2019-01-29 電力変換装置

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US17/155,729 Continuation US11653481B2 (en) 2018-07-25 2021-01-22 Electric power conversion device

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WO2020021880A1 true WO2020021880A1 (fr) 2020-01-30

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001320005A (ja) * 2000-05-10 2001-11-16 Denso Corp 冷媒冷却型両面冷却半導体装置
JP2015089244A (ja) * 2013-10-31 2015-05-07 Ntn株式会社 モータ用インバータ装置
JP2015095957A (ja) * 2013-11-12 2015-05-18 株式会社デンソー 電力変換装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001320005A (ja) * 2000-05-10 2001-11-16 Denso Corp 冷媒冷却型両面冷却半導体装置
JP2015089244A (ja) * 2013-10-31 2015-05-07 Ntn株式会社 モータ用インバータ装置
JP2015095957A (ja) * 2013-11-12 2015-05-18 株式会社デンソー 電力変換装置

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