WO2020016958A1 - Power module and method of manufacturing same - Google Patents

Power module and method of manufacturing same Download PDF

Info

Publication number
WO2020016958A1
WO2020016958A1 PCT/JP2018/026878 JP2018026878W WO2020016958A1 WO 2020016958 A1 WO2020016958 A1 WO 2020016958A1 JP 2018026878 W JP2018026878 W JP 2018026878W WO 2020016958 A1 WO2020016958 A1 WO 2020016958A1
Authority
WO
WIPO (PCT)
Prior art keywords
main surface
insulating resin
power module
metal layer
resin portion
Prior art date
Application number
PCT/JP2018/026878
Other languages
French (fr)
Japanese (ja)
Inventor
邦彦 田尻
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2018/026878 priority Critical patent/WO2020016958A1/en
Publication of WO2020016958A1 publication Critical patent/WO2020016958A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a power module and a method of manufacturing the same.
  • Patent Document 1 discloses a base substrate, an insulating substrate provided on the base substrate, an upper electrode bonded to an upper surface of the insulating substrate, and a lower electrode bonded to a lower surface of the insulating substrate.
  • a power module including an electrode, a semiconductor chip bonded to an upper electrode, and an insulating resin portion is disclosed.
  • the insulating resin portion is formed in the entire space between the lower surface of the insulating substrate and the base plate.
  • the crack is a starting point of the partial discharge. Bubbles and cracks reduce the withstand voltage of the power module and reduce the reliability of the power module.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a power module having improved reliability and a method for manufacturing the same.
  • the power module of the present invention includes a base plate, an insulated circuit board, a semiconductor element, and a first insulating resin part.
  • the insulated circuit board is provided on the base plate.
  • the insulated circuit board includes an insulating substrate, a first metal layer, and a second metal layer.
  • the insulating substrate includes a first main surface facing the base plate, a second main surface opposite to the first main surface, and a first side surface connecting the first main surface and the second main surface.
  • the first metal layer is provided on the first main surface of the insulating substrate.
  • the second metal layer is provided on the second main surface of the insulating substrate.
  • the semiconductor element is joined to the second metal layer.
  • the first insulating resin portion is provided between the base plate and the first main surface.
  • the first metal layer includes a third main surface facing the insulating substrate, a fourth main surface facing the base plate, and a second side surface connecting the third main surface and the fourth main surface. At least a part of the first corner formed by the second side surface and the first main surface is covered with the first insulating resin portion.
  • a first peripheral portion of the first major surface exposed from the first metal layer has a first region proximal to the first corner and a second region adjacent to the first region and distal from the first corner. Region.
  • the first region is covered with a first insulating resin part.
  • the second region is exposed from the first insulating resin part.
  • the surface of the first insulating resin portion opposite to the first metal layer is an inclined surface whose inclination with respect to the first main surface gradually increases from the base plate side toward the first main surface side.
  • the method of manufacturing a power module according to the present invention includes providing an insulating circuit board on a base plate.
  • the insulated circuit board includes an insulating substrate, a first metal layer, and a second metal layer.
  • the insulating substrate includes a first main surface facing the base plate, a second main surface opposite to the first main surface, and a first side surface connecting the first main surface and the second main surface.
  • the first metal layer is provided on the first main surface of the insulating substrate.
  • the second metal layer is provided on the second main surface of the insulating substrate.
  • a method for manufacturing a power module according to the present invention includes joining a semiconductor element to a second metal layer and providing a first insulating resin portion between a base plate and a first main surface.
  • the first metal layer includes a third main surface facing the insulating substrate, a fourth main surface facing the base plate, and a second side surface connecting the third main surface and the fourth main surface. At least a part of the first corner formed by the second side surface and the first main surface is covered with the first insulating resin portion.
  • a first peripheral portion of the first major surface exposed from the first metal layer has a first region proximal to the first corner and a second region adjacent to the first region and distal from the first corner. Region.
  • the first region is covered with a first insulating resin part.
  • the second region is exposed from the first insulating resin part.
  • the surface of the first insulating resin portion opposite to the first metal layer is an inclined surface whose inclination with respect to the first main surface gradually increases from the base plate side toward the first main surface side.
  • the first insulating resin portion when the first insulating resin portion is provided between the first main surface of the insulating substrate and the base plate, it is possible to suppress bubbles from remaining in the first insulating resin portion. . Further, it is possible to prevent the first insulating resin portion from being cracked due to a difference in thermal expansion coefficient between the insulating circuit board and the first insulating resin portion. Further, at least a part of the first corner where the lines of electric force are concentrated during operation of the power module is covered with the first insulating resin part. The withstand voltage of the power module is improved. The reliability of the power module is improved.
  • FIG. 2 is a schematic sectional view of the power module according to the first embodiment.
  • FIG. 2 is a schematic partial enlarged view of a region II shown in FIG. 1 of the power module according to the first embodiment.
  • FIG. 3 is a schematic partial enlarged view of a region III shown in FIG. 2 of the power module according to the first embodiment.
  • FIG. 4 is a schematic partial enlarged view of a region IV shown in FIG. 2 of a power module according to a modification of the first embodiment.
  • FIG. 5 is a schematic partial enlarged view of a region V shown in FIG. 2 of a power module according to a modification of the first embodiment.
  • FIG. 3 is a schematic plan view of a third main surface of a first metal layer included in the power module according to Embodiment 1.
  • FIG. 1 is a schematic partial enlarged view of a region II shown in FIG. 1 of the power module according to the first embodiment.
  • FIG. 3 is a schematic partial enlarged view of a region III shown in FIG. 2 of
  • FIG. 7 is a schematic partial enlarged plan view of a region VII shown in FIG. 6 of a third main surface of a first metal layer included in the power module according to the first embodiment.
  • FIG. 7 is a schematic partially enlarged plan view of a region VIII shown in FIG. 6 of a third main surface of a first metal layer included in a power module according to a modification of the first embodiment.
  • FIG. 3 is a schematic partial enlarged cross-sectional view illustrating electric lines of force generated in the power module when the power module according to the first embodiment operates.
  • FIG. 3 is a schematic partial enlarged cross-sectional view showing a path of a partial discharge in the power module according to the first embodiment.
  • FIG. 5 is a diagram showing a flowchart of a method for manufacturing the power module according to the first embodiment.
  • FIG. 9 is a diagram showing a flowchart of a step of providing a first insulating resin layer in the power module manufacturing methods according to the first and second embodiments.
  • FIG. 7 is a schematic sectional view of a power module according to a second embodiment.
  • FIG. 14 is a schematic partial enlarged sectional view of a region XIV shown in FIG. 13 of the power module according to the second embodiment.
  • FIG. 14 is a schematic partial enlarged cross-sectional view showing electric lines of force generated in the power module when the power module according to the second embodiment operates.
  • FIG. 10 is a diagram showing a flowchart of a method for manufacturing a power module according to the second embodiment.
  • Embodiment 1 FIG.
  • the power module 1 according to the first embodiment will be described with reference to FIGS.
  • the power module 1 includes a base plate 30, an insulated circuit board 3, a semiconductor element 20, a first insulating resin portion 33, and a sealing member 40.
  • the power module 1 of the present embodiment further includes an outer casing 37 and a lid 39.
  • the base plate 30 supports the insulated circuit board 3.
  • the base plate 30 functions as a heat radiating member for dissipating heat generated from the semiconductor element 20 to the outside of the power module 1.
  • the base plate 30 is, for example, a metal plate such as a copper plate or an aluminum plate.
  • the insulating circuit board 3 is provided on the base plate 30. Specifically, the insulating circuit board 3 is joined to the base plate 30 by using a joining member 31.
  • the joining member 31 is, for example, solder.
  • a solder resist layer 32 having an opening is provided on the base plate 30.
  • the solder resist layer 32 defines a region where the joining member 31 is formed.
  • the joining member 31 is formed in the opening of the solder resist layer 32.
  • the insulated circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8.
  • the insulating substrate 4 connects the first main surface 4a facing the base plate 30, the second main surface 4b opposite to the first main surface 4a, and the first main surface 4a and the second main surface 4b. And a first side surface 4c.
  • the insulated circuit board 3 includes a second corner 4d and a fourth corner 4e.
  • the second corner 4d is formed by the first main surface 4a and the first side surface 4c.
  • the fourth corner 4e is formed by the second main surface 4b and the first side surface 4c.
  • the insulating substrate 4 is, for example, a ceramic substrate made of aluminum nitride (AlN).
  • the first metal layer 5 is provided on the first main surface 4a of the insulating substrate 4.
  • the first metal layer 5 includes a third main surface 5a facing the insulating substrate 4, a fourth main surface 5b facing the base plate 30, and a second main surface 5a connecting the third main surface 5a and the fourth main surface 5b. And a side surface 5c.
  • the first metal layer 5 is made of, for example, copper or aluminum.
  • one or more first grooves 6 are formed in the second side surface 5c.
  • One or more first grooves 6 extend from the third main surface 5a toward the fourth main surface 5b.
  • the first groove 61 or more has the following first width w 1 and 0.1mm below the first and the depth d 1 0.1mm.
  • the one or more first grooves 6 are a plurality of first grooves 6.
  • An interval g 1 between the first grooves 6 adjacent to each other is, for example, equal to or less than a first width w 1 .
  • the plurality of first grooves 6 are formed over the entire circumference of the third main surface 5a.
  • the first groove 6 is, for example, a semicircular groove (FIG. 7), a triangular groove (FIG. 8) or a rectangular groove.
  • a second groove 7 communicating with one or more first grooves 6 is formed on the third main surface 5a.
  • the second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a.
  • the second groove 7 extends over, for example, 60% or more of the entire length of the peripheral portion of the third main surface 5a.
  • the second groove 7 extends over, for example, 80% or more of the entire length of the peripheral portion of the third main surface 5a.
  • the second groove 7 extends, for example, over the entire length of the peripheral portion of the third main surface 5a.
  • the second groove 7 is, for example, an inclined groove (FIG. 3), a concave curved groove (FIG. 4), a convex curved groove (FIG. 5), or a rectangular groove.
  • the second metal layer 8 is provided on the second main surface 4b of the insulating substrate 4.
  • the second metal layer 8 includes a fifth main surface 8a facing the insulating substrate 4, a sixth main surface 8b opposite to the fifth main surface 8a, a fifth main surface 8a, and a sixth main surface 8b. And a third side surface 8c to be connected.
  • the second metal layer 8 is made of, for example, copper or aluminum.
  • the first distance D 1 of the between the second side surface 5c of the first side face 4c and the first metal layer 5 of the insulating substrate 4, the first side 4c and the second metal insulating substrate 4 substantially equal to the second distance D 2 between the third side surface 8c of the layer 8.
  • the first distance D 1 is substantially equal to the second distance D 2, which means that the first distance D 1 is less than 110% 90% of the second distance D 2.
  • the first interval D 1 may be, for example, 90% or more and 100% or less of the second interval D 2 .
  • the second metal layer 8 includes a first metal layer portion 9 and a second metal layer portion 10 spaced from the first metal layer portion 9.
  • the semiconductor device 20 is, for example, a power semiconductor device such as an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a diode.
  • the semiconductor element 20 is formed of, for example, silicon (Si) or a wide band gap semiconductor material such as silicon carbide (SiC), gallium nitride (GaN), or diamond.
  • the semiconductor element 20 is joined to the second metal layer 8. Specifically, the semiconductor element 20 is joined to the sixth main surface 8 b of the first metal layer portion 9 of the second metal layer 8 using the first conductive joining member 21.
  • the first conductive bonding member 21 is, for example, a solder or a conductive adhesive in which a metal filler such as a silver filler or a copper filler is dispersed in a resin.
  • the first conductive bonding member 21 is, for example, a sintered bonding member formed by firing metal nanoparticles such as silver nanoparticles or copper nanoparticles at a low temperature of 300 ° C. or less.
  • the semiconductor element 20 is electrically connected to the second metal layer portion 10 of the second metal layer 8 using a conductive wire 23.
  • the first lead terminal 25 is joined to the first metal layer portion 9 using the second conductive joining member 27.
  • the second lead terminal 26 is joined to the second metal layer portion 10 using a third conductive joining member 28.
  • the second conductive bonding member 27 and the third conductive bonding member 28 are, for example, solder or a conductive adhesive in which a metal filler such as a silver filler or a copper filler is dispersed in a resin.
  • the first lead terminal 25 and the second lead terminal 26 are drawn out of the power module 1 through the cover 39.
  • the first insulating resin portion 33 is provided between the base plate 30 and the first main surface 4a. At least a part of the first corner portion 17 formed by the second side surface 5c of the first metal layer 5 and the first main surface 4a of the insulating substrate 4 is covered with the first insulating resin portion 33. Since at least a portion of the first corner portion 17 is covered with the first insulating resin portion 33, at least a portion of the second side surface 5c and a portion of the first main surface 4a are joined by the first insulating resin portion 33. Covered. Specifically, all of the first corner portions 17 are covered with the first insulating resin portion 33. The first insulating resin portion 33 is provided in one or more first grooves 6 formed on the second side surface 5c.
  • the first peripheral portion 4p of the first main surface 4a of the insulating substrate 4 exposed from the first metal layer 5 is adjacent to the first region 4q close to the first corner 17 and the first region 4q, and And a second region 4r distal from the first corner 17.
  • the first region 4q is covered with the first insulating resin part 33.
  • the second region 4r is exposed from the first insulating resin part 33.
  • the width W of the first region 4q from the first corner 17 is, for example, not more than half of the distance D (the width of the first peripheral portion 4p) from the first corner 17 to the second corner 4d. is there.
  • the second region 4r has a larger area than the first region 4q.
  • the width W may be, for example, at most one-third or less of the distance D.
  • the width W may be, for example, at most a quarter of the distance D or less.
  • the width W may be, for example, at most one fifth or less of the distance D.
  • the width W may be, for example, at most one-sixth or less of the distance D.
  • the width W may be, for example, at most one-eighth of the distance D.
  • the width W may be, for example, not more than one tenth of the distance D at the maximum.
  • the width W is, for example, at least 0.1 mm or more. Therefore, at least a part of the first corner portion 17 where the electric lines of force 50 (see FIG.
  • the width W may be, for example, at least 0.2 mm or more.
  • the width W is, for example, at most 1.0 mm or less.
  • the width W may be, for example, at most 0.5 mm or less.
  • the surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is.
  • the first insulating resin portion 33 has a shape that converges from the base plate 30 side to the first main surface 4a side. Therefore, the contact area between the insulating circuit board 3 and the first insulating resin portion 33 and the volume ratio of the first insulating resin portion 33 occupying the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 Can be reduced.
  • the volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 50% or less.
  • the volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 40% or less.
  • the volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 30% or less.
  • the volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 20% or less.
  • the volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 100 ⁇ H 2 / (H 1 + H 2 )% or more (H 1 is the thickness of the first metal layer 5, H 2 is the thickness of the bonding member 31).
  • the first insulating resin portion 33 extends outside the insulating substrate 4 in a plan view of the second main surface 4b of the insulating substrate 4.
  • the electric lines of force 50 are also concentrated on the third corner 18 formed by the third side surface 8c and the second main surface 4b.
  • the partial discharge proceeds along the path 52 shown in FIG. Specifically, the partial discharge advances from the third corner 18 along the second main surface 4b and reaches the fourth corner 4e. Then, the partial discharge extends from the fourth corner 4e along the first side surface 4c and reaches the second corner 4d.
  • the partial discharge propagates through the sealing member 40 from the second corner 4d and reaches the portion 33e of the surface 33s of the first insulating resin portion 33 immediately below the second corner 4d. Then, the partial discharge proceeds from the portion 33 e in the direction opposite to the first metal layer 5 along the surface 33 s of the first insulating resin portion 33 and reaches the base plate 30. When the partial discharge reaches the base plate 30, the power module 1 is broken down.
  • the first insulating resin portion 33 extends outside the insulating substrate 4, so that the path 52 of the partial discharge can be lengthened. .
  • the life of the power module 1 until the power module 1 reaches dielectric breakdown can be extended.
  • the reliability of the power module 1 is improved.
  • the first insulating resin portion 33 is further provided in the second groove 7.
  • the first insulating resin portion 33 is provided in the second groove 7 over, for example, 80% or more of the entire length of the second groove 7.
  • the first insulating resin portion 33 is provided in the second groove 7 over, for example, 90% or more of the entire length of the second groove 7.
  • the first insulating resin portion 33 is provided in the second groove 7 over the entire length of the second groove 7, for example.
  • the first insulating resin portion 33 is formed of a material different from that of the sealing member 40.
  • the first insulating resin portion 33 is formed of, for example, silicone rubber or polyimide resin.
  • the first insulating resin portion 33 has higher adhesion to the insulating substrate 4 than the sealing member 40. Therefore, occurrence of partial discharge in the first corner portion 17 is suppressed.
  • the first insulating resin part 33 may have a lower dielectric constant than the sealing member 40. Therefore, the electric field intensity at the first corner 17 is reduced, and the occurrence of partial discharge at the first corner 17 is suppressed.
  • outer casing 37 is joined to base plate 30 using adhesive 38.
  • the outer enclosure 37 is formed of, for example, a resin having an electrical insulation property such as a polyphenylene sulfide (PPS) resin, an epoxy resin, a polyimide resin, an acrylic resin, or a liquid crystal polymer (LCP).
  • PPS polyphenylene sulfide
  • LCP liquid crystal polymer
  • the sealing member 40 is provided inside the outer enclosure 37.
  • the sealing member 40 seals the semiconductor element 20.
  • the sealing member 40 further seals the insulating substrate 4.
  • the sealing member 40 further seals the conductive wire 23.
  • the sealing member 40 has electrical insulation.
  • the sealing member 40 is formed of, for example, an insulating resin material such as silicone gel or epoxy resin.
  • the lid 39 is made of an electrically insulating resin such as an epoxy resin, a polyimide resin, an acrylic resin, or a liquid crystal polymer (LCP).
  • the lid 39 covers the sealing member 40 and closes the opening of the outer enclosure 37.
  • the method for manufacturing the power module 1 includes preparing the insulated circuit board 3 (S1).
  • the insulating circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8.
  • One or more first grooves 6 are formed in the second side surface 5 c of the first metal layer 5.
  • One or more first grooves 6 extend from the third main surface 5a of the first metal layer 5 toward the fourth main surface 5b.
  • a second groove 7 communicating with one or more first grooves 6 is formed on the third main surface 5a of the first metal layer 5.
  • the second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a.
  • first grooves 6 and second grooves 7 are formed by performing laser processing, mechanical processing, or etching on the second side surface 5c of the first metal layer 5.
  • First metal layer 5 is attached to first main surface 4 a of insulating substrate 4.
  • Second metal layer 8 is attached to second main surface 4b of insulating substrate 4.
  • the method for manufacturing the power module 1 includes providing the insulated circuit board 3 on the base plate 30 (S2). Specifically, a solder resist layer 32 is formed on a part of the base plate 30. The solder resist layer 32 has an opening. The solder resist layer 32 is formed by applying a solder resist material on a part of the base plate 30 and curing the solder resist material. Then, the joining member 31 such as solder is provided in the opening of the solder resist layer 32. The insulated circuit board 3 is joined to the base plate 30 using a joining member 31.
  • the method for manufacturing the power module 1 includes bonding the semiconductor element 20 to the second metal layer 8 of the insulated circuit board 3 (S3). Specifically, the semiconductor element 20 is bonded to the first metal layer portion 9 of the second metal layer 8 using the first conductive bonding member 21.
  • the first conductive bonding member 21 is, for example, a solder, a conductive adhesive, or a sintered bonding member. Joining the semiconductor element 20 to the second metal layer 8 (S3) may be performed before providing the insulating circuit board 3 on the base plate 30 (S2).
  • the method for manufacturing the power module 1 of the present embodiment includes providing the first insulating resin portion 33 between the base plate 30 and the first main surface 4a of the insulating substrate 4 (S4). At least a part of the first corner portion 17 formed by the second side surface 5c of the first metal layer 5 and the first main surface 4a of the insulating substrate 4 is covered with the first insulating resin portion 33.
  • the surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is.
  • the first insulating resin portion 33 has a shape that converges from the base plate 30 side to the first main surface 4a side. Specifically, the entire circumference of the first corner portion 17 is covered with the first insulating resin portion 33. In a plan view of the second main surface 4 b of the insulating substrate 4, the first insulating resin portion 33 extends outside the insulating substrate 4.
  • a first insulating resin material is supplied between the base plate 30 and the first main surface 4a of the insulating substrate 4 (S41).
  • the first insulating resin material is supplied into a portion of the one or more first grooves 6 on the side of the base plate 30 (S42).
  • a first insulating resin material is applied on the solder resist layer 32.
  • the first insulating resin material is supplied only to a portion on the base plate 30 side in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30.
  • the first insulating resin material is supplied to at least a part of the first corner 17 through the one or more first grooves 6 by the capillary action in the one or more first grooves 6 (S43).
  • at least a part of the first corner portion 17 is covered with the first insulating resin material.
  • the second groove 7 communicates with one or more first grooves 6.
  • the first insulating resin material crawling up the one or more first grooves 6 by the capillary action in the one or more first grooves 6 is supplied to the second grooves 7.
  • the first insulating resin material supplied from the one or more first grooves 6 to the second grooves 7 is expanded into the second grooves 7 by capillary action in the second grooves 7 (S44).
  • the first insulating resin material is provided in the second groove 7.
  • the first insulating resin material is subjected to defoaming treatment (S45). Specifically, the first insulating resin material is held in a reduced pressure atmosphere, and the first insulating resin material is defoamed. Then, the first insulating resin material is cured (S46). Thus, the first insulating resin portion 33 is formed.
  • the method for manufacturing the power module 1 includes providing electric wiring (for example, the conductive wire 23, the first lead terminal 25, and the second lead terminal 26) to the semiconductor element 20 (S6).
  • the conductive wire 23 is bonded to the semiconductor element 20 and the second metal layer portion 10 of the second metal layer 8.
  • the first lead terminal 25 is joined to the first metal layer portion 9 of the second metal layer 8 using the second conductive joining member 27.
  • the second lead terminal 26 is joined to the second metal layer portion 10 of the second metal layer 8 using a third conductive joining member 28.
  • the application of the electric wiring to the semiconductor element 20 (S6) may be performed before the provision of the first insulating resin portion 33 (S4).
  • the method for manufacturing the power module 1 of the present embodiment includes sealing the semiconductor element 20 using the sealing member 40 (S7). Specifically, the outer enclosure 37 is joined to the base plate 30 using an adhesive 38. The sealing member 40 is provided inside the outer enclosure 37. Specifically, a sealing material is injected into the inside of the outer enclosure 37. The sealing material is then cured. The sealing member 40 is covered with the lid 39. The opening of the outer enclosure 37 is closed by a lid 39. The first lead terminal 25 and the second lead terminal 26 are drawn out of the power module 1 through the cover 39. Thus, the power module 1 is obtained.
  • the power module 1 of the present embodiment and the method of manufacturing the same have the following effects.
  • the power module 1 of the present embodiment includes a base plate 30, an insulated circuit board 3, a semiconductor element 20, and a first insulating resin portion 33.
  • the insulated circuit board 3 is provided on the base plate 30.
  • the insulating circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8.
  • the insulating substrate 4 connects the first main surface 4a facing the base plate 30, the second main surface 4b opposite to the first main surface 4a, and the first main surface 4a and the second main surface 4b. And a first side surface 4c.
  • the first metal layer 5 is provided on the first main surface 4a of the insulating substrate 4.
  • the second metal layer 8 is provided on the second main surface 4b of the insulating substrate 4.
  • the semiconductor element 20 is joined to the second metal layer 8.
  • the first insulating resin portion 33 is provided between the base plate 30 and the first main surface 4a.
  • the first metal layer 5 includes a third main surface 5a facing the insulating substrate 4, a fourth main surface 5b facing the base plate 30, and a second main surface 5a connecting the third main surface 5a and the fourth main surface 5b. And a side surface 5c. At least a part of the first corner portion 17 formed by the second side surface 5c and the first main surface 4a is covered with the first insulating resin portion 33.
  • the first peripheral portion 4p of the first main surface 4a exposed from the first metal layer 5 has a first region 4q which is close to the first corner 17 and a first corner which is adjacent to the first region 4q. 17 and a second region 4r distal to 17. The first region 4q is covered with the first insulating resin portion 33.
  • the second region 4r is exposed from the first insulating resin part 33.
  • the surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is.
  • the air bubbles remain in the first insulating resin portion 33. It escapes into the gap between the resin part 33 and the first main surface 4a. Residual air bubbles in the first insulating resin portion 33 are suppressed. Further, the contact area between the insulating circuit board 3 and the first insulating resin portion 33 is reduced. During the operation of the power module 1, the stress applied to the first insulating resin part 33 due to the difference in thermal expansion coefficient between the insulating circuit board 3 and the first insulating resin part 33 decreases.
  • one or more first grooves 6 are formed in second side surface 5c.
  • One or more first grooves 6 extend from the third main surface 5a toward the fourth main surface 5b.
  • the first insulating resin portion 33 is provided in one or more first grooves 6. Therefore, the first insulating resin portion 33 covers at least a part of the first corner portion 17 while utilizing the capillary phenomenon in the one or more first grooves 6 to form the second region 4r of the first main surface 4a.
  • the inclination of the surface 33s of the first insulating resin portion 33 with respect to the first main surface 4a gradually increases from the base plate 30 toward the first main surface 4a. It can be an inclined surface that becomes larger.
  • one or more first grooves 6 have a first width of 0.1 mm or less and a first depth of 0.1 mm or less. Therefore, the first insulating resin portion 33 covers at least a part of the first corner portion 17 while utilizing the capillary phenomenon in the one or more first grooves 6 to form the second region 4r of the first main surface 4a. While being able to be exposed from the first insulating resin portion 33, the inclination of the surface 33s of the first insulating resin portion 33 with respect to the first main surface 4a gradually increases from the base plate 30 toward the first main surface 4a. It can be an inclined surface that becomes larger.
  • one or more first grooves 6 are a plurality of first grooves 6.
  • the plurality of first grooves 6 are formed over the entire circumference of the third main surface 5a. Therefore, a wider range of the first corner portion 17 is covered by the first insulating resin portion 33.
  • the withstand voltage of the power module 1 is improved.
  • the reliability of the power module 1 is improved.
  • a second groove 7 communicating with one or more first grooves 6 is formed in the third main surface 5a.
  • the second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a.
  • the first insulating resin part 33 is also provided in the second groove 7. Therefore, a wider range of the first corner portion 17 is covered by the first insulating resin portion 33.
  • the withstand voltage of the power module 1 is improved.
  • the reliability of the power module 1 is improved.
  • second groove 7 has a second width of 0.1 mm or more and 0.5 mm or less and a second depth of 0.1 mm or more and 0.5 mm or less. Therefore, the first insulating resin portion 33 can be easily provided in the second groove 7 by utilizing the capillary phenomenon in the second groove 7.
  • second metal layer 8 includes fifth main surface 8a facing insulating substrate 4, sixth main surface 8b opposite to fifth main surface 8a, and fifth main surface 8b. It includes a third side surface 8c connecting the surface 8a and the sixth main surface 8b.
  • the first distance D 1 of the between the first side 4c and the second side surface 5c of the first metal layer 5 of the insulating substrate 4, and a third side surface 8c of the first side 4c and the second metal layer 8 of the insulating substrate 4 substantially equal to the second distance D 2 between.
  • the third main surface 5a and the fourth major surface 5b of the power module 1 of this embodiment, the third main surface 5a and the power module of the first distance D 1 is greater Comparative Example than the second distance D 2 It is larger than the fourth main surface 5b.
  • the power module 1 of the present embodiment can more efficiently dissipate heat generated from the semiconductor element 20 to the outside of the power module 1 through the base plate 30 than the power module of the comparative example. The reliability of the power module 1 is improved.
  • the first insulating resin portion 33 extends outside the insulating substrate 4 in a plan view of the second main surface 4b. Therefore, the path 52 of the partial discharge in the power module 1 can be lengthened, and the life of the power module 1 until the power module 1 reaches dielectric breakdown can be lengthened. The reliability of the power module 1 is improved.
  • the method for manufacturing the power module 1 according to the present embodiment includes providing the insulated circuit board 3 on the base plate 30 (S2).
  • the insulating circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8.
  • the insulating substrate 4 connects the first main surface 4a facing the base plate 30, the second main surface 4b opposite to the first main surface 4a, and the first main surface 4a and the second main surface 4b. And a first side surface 4c.
  • the first metal layer 5 is provided on the first main surface 4a of the insulating substrate 4.
  • the second metal layer 8 is provided on the second main surface 4b of the insulating substrate 4.
  • the method for manufacturing the power module 1 according to the present embodiment includes joining the semiconductor element 20 to the second metal layer 8 (S3) and providing the first insulating resin portion 33 between the base plate 30 and the first main surface 4a. (S4).
  • the first metal layer 5 includes a third main surface 5a facing the insulating substrate 4, a fourth main surface 5b facing the base plate 30, and a second main surface 5a connecting the third main surface 5a and the fourth main surface 5b. And a side surface 5c. At least a part of the first corner portion 17 formed by the second side surface 5c and the first main surface 4a is covered with the first insulating resin portion 33.
  • the first peripheral portion 4p of the first main surface 4a exposed from the first metal layer 5 has a first region 4q which is close to the first corner 17 and a first corner which is adjacent to the first region 4q. 17 and a second region 4r distal to 17. The first region 4q is covered with the first insulating resin portion 33.
  • the second region 4r is exposed from the first insulating resin part 33.
  • the surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is.
  • the air bubbles remain in the first insulating resin portion 33. It escapes into the gap between the resin part 33 and the first main surface 4a. Residual air bubbles in the first insulating resin portion 33 are suppressed. Further, the contact area between the insulating circuit board 3 and the first insulating resin portion 33 is reduced. During the operation of the power module 1, the stress applied to the first insulating resin part 33 due to the difference in thermal expansion coefficient between the insulating circuit board 3 and the first insulating resin part 33 decreases.
  • one or more first grooves 6 are formed on the second side surface 5c.
  • One or more first grooves 6 extend from the third main surface 5a toward the fourth main surface 5b.
  • Providing the first insulating resin portion 33 (S4) includes supplying the first insulating resin material into a portion of the one or more first grooves 6 on the base plate 30 side (S42), Supplying the first insulating resin material to at least a part of the first corner portion 17 through the one or more first grooves 6 by the capillary action in the first groove 6 (S43).
  • first insulating resin portion 33 forms at least a part of first corner portion 17 by utilizing the capillary phenomenon in one or more first grooves 6. While covering, the second region 4r of the first main surface 4a can be exposed from the first insulating resin portion 33, and the surface 33s of the first insulating resin portion 33 is moved from the base plate 30 side to the first main surface 4a. , The slope with respect to the first main surface 4a gradually increases.
  • one or more first grooves 6 are a plurality of first grooves 6.
  • a plurality of first grooves 6 are formed over the entire circumference of the third main surface 5a. Therefore, a wider range of the first corner portion 17 is covered by the first insulating resin portion 33. The withstand voltage of the power module 1 is improved. According to the method of manufacturing power module 1 of the present embodiment, power module 1 having improved reliability can be obtained.
  • second groove 7 communicating with one or more first grooves 6 is formed in third main surface 5a.
  • the second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a.
  • Providing the first insulating resin portion 33 is that the first insulating resin material supplied from the first groove 6 to the second groove 7 is transferred into the second groove 7 by a capillary phenomenon in the second groove 7. Expanding (S44) is further included. Therefore, a wider range of the first corner portion 17 is easily covered by the first insulating resin portion 33.
  • the withstand voltage of the power module 1 is improved. According to the method of manufacturing power module 1 of the present embodiment, power module 1 having improved reliability can be obtained.
  • Embodiment 2 FIG.
  • the power module 1b according to the second embodiment will be described with reference to FIGS.
  • the power module 1b of the present embodiment further includes a second insulating resin part 42 in addition to the same configuration as the power module 1 of the first embodiment.
  • the second insulating resin portion 42 covers at least a part of the third corner portion 18 formed by the third side surface 8c and the second main surface 4b. Since at least a portion of the third corner portion 18 is covered with the second insulating resin portion 42, at least a portion of the third side surface 8c and a portion of the second main surface 4b are joined by the second insulating resin portion 42. Covered. Specifically, the entire third corner 18 is covered with the second insulating resin part 42. As shown in FIG. 15, at least a part of the third corner portion 18 where the electric lines of force 50 are concentrated when the power module 1 b operates is covered with the second insulating resin portion 42. The withstand voltage of the power module 1b is improved. The reliability of the power module 1b is improved.
  • the second insulating resin portion 42 covers the second peripheral portion 4s of the second main surface 4b exposed from the second metal layer 8.
  • the second insulating resin portion 42 extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b.
  • the second insulating resin portion 42 further covers a fifth corner 8d formed by the third side surface 8c and the sixth main surface 8b.
  • the second insulating resin portion 42 further covers a part of the peripheral portion 8e of the sixth main surface 8b.
  • the second insulating resin portion 42 across the width w 3 from the fifth corner 8d, and covers the peripheral edge portion 8e of the sixth main surface 8b.
  • Width w 3 is, for example, 1.0mm or less at the maximum.
  • Width w 3 is, for example, at least 0.1mm or more.
  • the second insulating resin portion 42 is formed of a material different from that of the sealing member 40.
  • the second insulating resin part 42 is formed of, for example, silicone rubber or polyimide resin.
  • the second insulating resin part 42 may have a lower dielectric constant than the sealing member 40. Therefore, the electric field intensity at the third corner 18 decreases, and the occurrence of partial discharge at the third corner 18 is suppressed.
  • the second insulating resin portion 42 may be formed of the same material as the first insulating resin portion 33, or may be formed of a material different from the first insulating resin portion 33.
  • the second insulating resin portion 42 has higher adhesion to the insulating substrate 4 than the sealing member 40. Therefore, occurrence of partial discharge in the third corner portion 18 is suppressed. Further, since the second insulating resin portion 42 extends from the third corner portion 18 to the fourth corner portion 4e formed by the first side surface 4c and the second main surface 4b, the third corner portion is temporarily provided. Even if a partial discharge occurs in portion 18, the rate of progress of the partial discharge along second main surface 4b can be reduced. It is possible to extend the life of the power module 1b until the power module 1b breaks down. The reliability of the power module 1b is improved.
  • the method for manufacturing the power module 1b of the present embodiment further includes providing the second insulating resin portion 42 (S5) in addition to the same steps as those of the method of manufacturing the power module 1 of the first embodiment.
  • the second insulating resin part 42 covers at least a part of the third corner 18. Specifically, the second insulating resin portion 42 covers the entire third corner 18.
  • the second insulating resin portion 42 covers the second peripheral portion 4s of the second main surface 4b exposed from the second metal layer 8.
  • the second insulating resin portion 42 extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b.
  • the second insulating resin material is supplied (S51). Specifically, the second insulating resin material is applied on at least a part of the third corner 18. The second insulating resin material covers at least a part of the third corner 18. The second insulating resin material further covers the second peripheral portion 4s of the second main surface 4b exposed from the second metal layer 8. The second insulating resin material extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b. The second insulating resin material further covers a fifth corner 8d formed by the third side surface 8c and the sixth main surface 8b. The second insulating resin material further covers a part of the peripheral portion 8e of the sixth main surface 8b.
  • the power module 1b of the present embodiment and the method of manufacturing the same have the following effects in addition to the effects of the power module 1 of the first embodiment and the method of manufacturing the same.
  • the power module 1b further includes a second insulating resin portion 42.
  • the second insulating resin portion 42 covers at least a part of the third corner 18 formed by the third side surface 8c and the second main surface 4b. At least a part of the third corner portion 18 where the electric lines of force 50 are concentrated during operation of the power module 1b is covered with the third insulating resin portion, so that the withstand voltage of the power module 1b is improved. The reliability of the power module 1b is improved.
  • the method for manufacturing the power module 1b according to the present embodiment further includes providing the second insulating resin portion 42 (S5).
  • the second insulating resin portion 42 covers at least a part of the third corner 18 formed by the third side surface 8c and the second main surface 4b. At least a part of the third corner portion 18 where the electric lines of force 50 are concentrated during operation of the power module 1b is covered with the third insulating resin portion, so that the withstand voltage of the power module 1b is improved. According to the method of manufacturing power module 1b of the present embodiment, power module 1b having improved reliability can be obtained.
  • the second insulating resin portion 42 covers the second peripheral portion 4 s of the second main surface 4 b exposed from the second metal layer 8.
  • the second insulating resin portion 42 extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b. Therefore, the second insulating resin portion 42 can reduce the rate of progress of the partial discharge along the second main surface 4b. It is possible to extend the life of the power module 1b until the power module 1b breaks down. The reliability of the power module 1b is improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A power module (1) includes a base plate (30), an insulating circuit board (3), and a first insulating resin part (33). The insulating circuit board (3) includes an insulating board (4) and a first metal layer (5). At least a portion of a first corner part (17) is covered by the first insulating resin part (33). A second region (4r) which is part of a first major face (4a) and distal from the first corner part (17) is exposed from the first insulating resin part (33). A surface (33s) of the first insulating resin part (33) on the opposite side from the first metal layer (5) is an inclined surface with a slope to the first major face (4a) gradually increasing from the base plate (30) side to the first major face (4a) side. Thus, the reliability of the power module (1) is improved.

Description

パワーモジュール及びその製造方法Power module and method of manufacturing the same
　本発明は、パワーモジュール及びその製造方法に関する。 << The present invention relates to a power module and a method of manufacturing the same.
　特開２００９－７０８６３号公報（特許文献１）は、ベース基板と、ベース基板上に設けられた絶縁基板と、絶縁基板の上面に接合された上部電極と、絶縁基板の下面に接合された下部電極と、上部電極に接合された半導体チップと、絶縁樹脂部とを備えるパワーモジュールを開示している。絶縁樹脂部は、絶縁基板の下面とベース板との間の空間全体に形成されている。 Japanese Patent Application Laid-Open No. 2009-70863 (Patent Document 1) discloses a base substrate, an insulating substrate provided on the base substrate, an upper electrode bonded to an upper surface of the insulating substrate, and a lower electrode bonded to a lower surface of the insulating substrate. A power module including an electrode, a semiconductor chip bonded to an upper electrode, and an insulating resin portion is disclosed. The insulating resin portion is formed in the entire space between the lower surface of the insulating substrate and the base plate.
特開２００９－７０８６３号公報JP 2009-70863 A
　特許文献１に開示されたパワーモジュールでは、絶縁基板の下面とベース板との間の空間全体に絶縁樹脂部を形成する際に、絶縁樹脂部に気泡が噛みこまれて、気泡が絶縁樹脂部内に残存することがあった。この気泡は、部分放電の起点となる。また、パワーモジュールの動作中に、パワーモジュールは温度サイクル環境に晒される。絶縁樹脂部は、絶縁基板の下面とベース板との間の空間全体に形成されており、絶縁基板等と広い面積で接触している。絶縁基板等と絶縁樹脂部との間の熱膨張係数の差に起因して、絶縁樹脂部にクラックが発生することがある。クラックは、部分放電の起点となる。気泡及びクラックは、パワーモジュールの絶縁耐圧を低下させて、パワーモジュールの信頼性を低下させる。本発明は、上記の課題を鑑みてなされたものであり、その目的は、向上された信頼性を有するパワーモジュール及びその製造方法を提供することである。 In the power module disclosed in Patent Literature 1, when the insulating resin portion is formed in the entire space between the lower surface of the insulating substrate and the base plate, bubbles are caught in the insulating resin portion, and the bubbles are generated in the insulating resin portion. In some cases. This bubble serves as a starting point of the partial discharge. Also, during operation of the power module, the power module is exposed to a temperature cycling environment. The insulating resin portion is formed in the entire space between the lower surface of the insulating substrate and the base plate, and is in contact with the insulating substrate and the like over a wide area. Cracks may occur in the insulating resin part due to the difference in thermal expansion coefficient between the insulating substrate and the like and the insulating resin part. The crack is a starting point of the partial discharge. Bubbles and cracks reduce the withstand voltage of the power module and reduce the reliability of the power module. The present invention has been made in view of the above problems, and an object of the present invention is to provide a power module having improved reliability and a method for manufacturing the same.
　本発明のパワーモジュールは、ベース板と、絶縁回路基板と、半導体素子と、第１絶縁樹脂部とを備える。絶縁回路基板は、ベース板上に設けられている。絶縁回路基板は、絶縁基板と、第１金属層と、第２金属層とを含む。絶縁基板は、ベース板に面する第１主面と、第１主面とは反対側の第２主面と、第１主面と第２主面とを接続する第１側面とを含む。第１金属層は、絶縁基板の第１主面上に設けられている。第２金属層は、絶縁基板の第２主面上に設けられている。半導体素子は、第２金属層に接合されている。第１絶縁樹脂部は、ベース板と第１主面との間に設けられている。第１金属層は、絶縁基板に面する第３主面と、ベース板に面する第４主面と、第３主面と第４主面とを接続する第２側面とを含む。第２側面と第１主面とによって形成される第１角部の少なくとも一部は第１絶縁樹脂部で覆われている。第１金属層から露出している第１主面の第１周縁部は、第１角部に近位の第１領域と、第１領域に隣接しかつ第１角部から遠位の第２領域とを含む。第１領域は第１絶縁樹脂部で覆われている。第２領域は、第１絶縁樹脂部から露出している。第１金属層とは反対側の第１絶縁樹脂部の表面は、ベース板の側から第１主面の側に向かうにつれて第１主面に対する傾きが次第に大きくなる傾斜面である。 The power module of the present invention includes a base plate, an insulated circuit board, a semiconductor element, and a first insulating resin part. The insulated circuit board is provided on the base plate. The insulated circuit board includes an insulating substrate, a first metal layer, and a second metal layer. The insulating substrate includes a first main surface facing the base plate, a second main surface opposite to the first main surface, and a first side surface connecting the first main surface and the second main surface. The first metal layer is provided on the first main surface of the insulating substrate. The second metal layer is provided on the second main surface of the insulating substrate. The semiconductor element is joined to the second metal layer. The first insulating resin portion is provided between the base plate and the first main surface. The first metal layer includes a third main surface facing the insulating substrate, a fourth main surface facing the base plate, and a second side surface connecting the third main surface and the fourth main surface. At least a part of the first corner formed by the second side surface and the first main surface is covered with the first insulating resin portion. A first peripheral portion of the first major surface exposed from the first metal layer has a first region proximal to the first corner and a second region adjacent to the first region and distal from the first corner. Region. The first region is covered with a first insulating resin part. The second region is exposed from the first insulating resin part. The surface of the first insulating resin portion opposite to the first metal layer is an inclined surface whose inclination with respect to the first main surface gradually increases from the base plate side toward the first main surface side.
　本発明のパワーモジュールの製造方法は、ベース板上に絶縁回路基板を設けることを備える。絶縁回路基板は、絶縁基板と、第１金属層と、第２金属層とを含む。絶縁基板は、ベース板に面する第１主面と、第１主面とは反対側の第２主面と、第１主面と第２主面とを接続する第１側面とを含む。第１金属層は、絶縁基板の第１主面上に設けられている。第２金属層は、絶縁基板の第２主面上に設けられている。本発明のパワーモジュールの製造方法は、第２金属層に半導体素子を接合することと、ベース板と第１主面との間に第１絶縁樹脂部を設けることとを備える。第１金属層は、絶縁基板に面する第３主面と、ベース板に面する第４主面と、第３主面と第４主面とを接続する第２側面とを含む。第２側面と第１主面とによって形成される第１角部の少なくとも一部は第１絶縁樹脂部で覆われている。第１金属層から露出している第１主面の第１周縁部は、第１角部に近位の第１領域と、第１領域に隣接しかつ第１角部から遠位の第２領域とを含む。第１領域は第１絶縁樹脂部で覆われている。第２領域は、第１絶縁樹脂部から露出している。第１金属層とは反対側の第１絶縁樹脂部の表面は、ベース板の側から第１主面の側に向かうにつれて第１主面に対する傾きが次第に大きくなる傾斜面である。 The method of manufacturing a power module according to the present invention includes providing an insulating circuit board on a base plate. The insulated circuit board includes an insulating substrate, a first metal layer, and a second metal layer. The insulating substrate includes a first main surface facing the base plate, a second main surface opposite to the first main surface, and a first side surface connecting the first main surface and the second main surface. The first metal layer is provided on the first main surface of the insulating substrate. The second metal layer is provided on the second main surface of the insulating substrate. A method for manufacturing a power module according to the present invention includes joining a semiconductor element to a second metal layer and providing a first insulating resin portion between a base plate and a first main surface. The first metal layer includes a third main surface facing the insulating substrate, a fourth main surface facing the base plate, and a second side surface connecting the third main surface and the fourth main surface. At least a part of the first corner formed by the second side surface and the first main surface is covered with the first insulating resin portion. A first peripheral portion of the first major surface exposed from the first metal layer has a first region proximal to the first corner and a second region adjacent to the first region and distal from the first corner. Region. The first region is covered with a first insulating resin part. The second region is exposed from the first insulating resin part. The surface of the first insulating resin portion opposite to the first metal layer is an inclined surface whose inclination with respect to the first main surface gradually increases from the base plate side toward the first main surface side.
　本発明のパワーモジュール及びその製造方法では、絶縁基板の第１主面とベース板との間に第１絶縁樹脂部を設ける際に、第１絶縁樹脂部内に気泡が残存することが抑制される。また、絶縁回路基板と第１絶縁樹脂部との間の熱膨張係数の差に起因して、第１絶縁樹脂部にクラックが発生することが防止される。さらに、パワーモジュールの動作時に電気力線が集中する第１角部の少なくとも一部は、第１絶縁樹脂部によって覆われている。パワーモジュールの絶縁耐圧が向上する。パワーモジュールの信頼性が向上する。 In the power module and the method of manufacturing the same according to the present invention, when the first insulating resin portion is provided between the first main surface of the insulating substrate and the base plate, it is possible to suppress bubbles from remaining in the first insulating resin portion. . Further, it is possible to prevent the first insulating resin portion from being cracked due to a difference in thermal expansion coefficient between the insulating circuit board and the first insulating resin portion. Further, at least a part of the first corner where the lines of electric force are concentrated during operation of the power module is covered with the first insulating resin part. The withstand voltage of the power module is improved. The reliability of the power module is improved.
実施の形態１に係るパワーモジュールの概略断面図である。FIG. 2 is a schematic sectional view of the power module according to the first embodiment. 実施の形態１に係るパワーモジュールの、図１に示される領域ＩＩの概略部分拡大図である。FIG. 2 is a schematic partial enlarged view of a region II shown in FIG. 1 of the power module according to the first embodiment. 実施の形態１に係るパワーモジュールの、図２に示される領域ＩＩＩの概略部分拡大図である。FIG. 3 is a schematic partial enlarged view of a region III shown in FIG. 2 of the power module according to the first embodiment. 実施の形態１の変形例に係るパワーモジュールの、図２に示される領域ＩＶの概略部分拡大図である。FIG. 4 is a schematic partial enlarged view of a region IV shown in FIG. 2 of a power module according to a modification of the first embodiment. 実施の形態１の変形例に係るパワーモジュールの、図２に示される領域Ｖの概略部分拡大図である。FIG. 5 is a schematic partial enlarged view of a region V shown in FIG. 2 of a power module according to a modification of the first embodiment. 実施の形態１に係るパワーモジュールに含まれる第１金属層の第３主面の概略平面図である。FIG. 3 is a schematic plan view of a third main surface of a first metal layer included in the power module according to Embodiment 1. 実施の形態１に係るパワーモジュールに含まれる第１金属層の第３主面の、図６に示される領域ＶＩＩの概略部分拡大平面図である。FIG. 7 is a schematic partial enlarged plan view of a region VII shown in FIG. 6 of a third main surface of a first metal layer included in the power module according to the first embodiment. 実施の形態１の変形例に係るパワーモジュールに含まれる第１金属層の第３主面の、図６に示される領域ＶＩＩＩの概略部分拡大平面図である。FIG. 7 is a schematic partially enlarged plan view of a region VIII shown in FIG. 6 of a third main surface of a first metal layer included in a power module according to a modification of the first embodiment. 実施の形態１のパワーモジュールの動作時にパワーモジュールに発生する電気力線を示す概略部分拡大断面図である。FIG. 3 is a schematic partial enlarged cross-sectional view illustrating electric lines of force generated in the power module when the power module according to the first embodiment operates. 実施の形態１に係るパワーモジュールにおける部分放電の経路を示す概略部分拡大断面図である。FIG. 3 is a schematic partial enlarged cross-sectional view showing a path of a partial discharge in the power module according to the first embodiment. 実施の形態１に係るパワーモジュールの製造方法のフローチャートを示す図である。FIG. 5 is a diagram showing a flowchart of a method for manufacturing the power module according to the first embodiment. 実施の形態１及び実施の形態２に係るパワーモジュールの製造方法における、第１絶縁樹脂層を設ける工程のフローチャートを示す図である。FIG. 9 is a diagram showing a flowchart of a step of providing a first insulating resin layer in the power module manufacturing methods according to the first and second embodiments. 実施の形態２に係るパワーモジュールの概略断面図である。FIG. 7 is a schematic sectional view of a power module according to a second embodiment. 実施の形態２に係るパワーモジュールの、図１３に示される領域ＸＩＶの概略部分拡大断面図である。FIG. 14 is a schematic partial enlarged sectional view of a region XIV shown in FIG. 13 of the power module according to the second embodiment. 実施の形態２のパワーモジュールの動作時にパワーモジュールに発生する電気力線を示す概略部分拡大断面図である。FIG. 14 is a schematic partial enlarged cross-sectional view showing electric lines of force generated in the power module when the power module according to the second embodiment operates. 実施の形態２に係るパワーモジュールの製造方法のフローチャートを示す図である。FIG. 10 is a diagram showing a flowchart of a method for manufacturing a power module according to the second embodiment.
　以下、本発明の実施の形態を説明する。なお、同一の構成には同一の参照番号を付し、その説明は繰り返さない。 Hereinafter, embodiments of the present invention will be described. Note that the same components are denoted by the same reference numerals, and description thereof will not be repeated.
　実施の形態１．
　図１から図１０を参照して、実施の形態１のパワーモジュール１を説明する。パワーモジュール１は、ベース板３０と、絶縁回路基板３と、半導体素子２０と、第１絶縁樹脂部３３と、封止部材４０とを備える。本実施の形態のパワーモジュール１は、外囲体３７と、蓋部３９とをさらに備える。 Embodiment 1 FIG.
The power module 1 according to the first embodiment will be described with reference to FIGS. The power module 1 includes a base plate 30, an insulated circuit board 3, a semiconductor element 20, a first insulating resin portion 33, and a sealing member 40. The power module 1 of the present embodiment further includes an outer casing 37 and a lid 39.
　ベース板３０は、絶縁回路基板３を支持している。ベース板３０は、半導体素子２０から発生する熱をパワーモジュール１の外部に放散させる放熱部材として機能している。ベース板３０は、例えば、銅板またはアルミニウム板のような金属板である。 The base plate 30 supports the insulated circuit board 3. The base plate 30 functions as a heat radiating member for dissipating heat generated from the semiconductor element 20 to the outside of the power module 1. The base plate 30 is, for example, a metal plate such as a copper plate or an aluminum plate.
　絶縁回路基板３は、ベース板３０上に設けられている。具体的には、絶縁回路基板３は、接合部材３１を用いて、ベース板３０に接合されている。接合部材３１は、例えば、はんだである。開口部を有するソルダーレジスト層３２が、ベース板３０上に設けられている。ソルダーレジスト層３２は、接合部材３１が形成される領域を規定する。接合部材３１は、ソルダーレジスト層３２の開口部内に形成されている。 The insulating circuit board 3 is provided on the base plate 30. Specifically, the insulating circuit board 3 is joined to the base plate 30 by using a joining member 31. The joining member 31 is, for example, solder. A solder resist layer 32 having an opening is provided on the base plate 30. The solder resist layer 32 defines a region where the joining member 31 is formed. The joining member 31 is formed in the opening of the solder resist layer 32.
　絶縁回路基板３は、絶縁基板４と、第１金属層５と、第２金属層８とを含む。絶縁基板４は、ベース板３０に面する第１主面４ａと、第１主面４ａとは反対側の第２主面４ｂと、第１主面４ａと第２主面４ｂとを接続する第１側面４ｃとを含む。絶縁回路基板３は、第２角部４ｄと第４角部４ｅとを含む。第２角部４ｄは、第１主面４ａと第１側面４ｃとによって形成される。第４角部４ｅは、第２主面４ｂと第１側面４ｃとによって形成される。絶縁基板４は、例えば、窒化アルミニウム（ＡｌＮ）製のセラミック基板である。 The insulated circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8. The insulating substrate 4 connects the first main surface 4a facing the base plate 30, the second main surface 4b opposite to the first main surface 4a, and the first main surface 4a and the second main surface 4b. And a first side surface 4c. The insulated circuit board 3 includes a second corner 4d and a fourth corner 4e. The second corner 4d is formed by the first main surface 4a and the first side surface 4c. The fourth corner 4e is formed by the second main surface 4b and the first side surface 4c. The insulating substrate 4 is, for example, a ceramic substrate made of aluminum nitride (AlN).
　第１金属層５は、絶縁基板４の第１主面４ａ上に設けられている。第１金属層５は、絶縁基板４に面する第３主面５ａと、ベース板３０に面する第４主面５ｂと、第３主面５ａと第４主面５ｂとを接続する第２側面５ｃとを含む。第１金属層５は、例えば、銅またはアルミニウム製である。 The first metal layer 5 is provided on the first main surface 4a of the insulating substrate 4. The first metal layer 5 includes a third main surface 5a facing the insulating substrate 4, a fourth main surface 5b facing the base plate 30, and a second main surface 5a connecting the third main surface 5a and the fourth main surface 5b. And a side surface 5c. The first metal layer 5 is made of, for example, copper or aluminum.
　図２及び図３に示されるように、第２側面５ｃに１つ以上の第１の溝６が形成されている。１つ以上の第１の溝６は、第３主面５ａから第４主面５ｂに向かって延在している。図３及び図７に示されるように、１つ以上の第１の溝６は、０．１ｍｍ以下の第１の幅ｗ1と０．１ｍｍ以下の第１の深さｄ1とを有する。特定的には、１つ以上の第１の溝６は、複数の第１の溝６である。互いに隣り合う第１の溝６の間の間隔ｇ1は、例えば、第１の幅ｗ1以下である。複数の第１の溝６は、第３主面５ａの全周にわたって形成されている。第１の溝６は、例えば、半円形溝（図７）、三角形溝（図８）または矩形溝である。 As shown in FIGS. 2 and 3, one or more first grooves 6 are formed in the second side surface 5c. One or more first grooves 6 extend from the third main surface 5a toward the fourth main surface 5b. As shown in FIGS. 3 and 7, the first groove 61 or more has the following first width w 1 and 0.1mm below the first and the depth d 1 0.1mm. Specifically, the one or more first grooves 6 are a plurality of first grooves 6. An interval g 1 between the first grooves 6 adjacent to each other is, for example, equal to or less than a first width w 1 . The plurality of first grooves 6 are formed over the entire circumference of the third main surface 5a. The first groove 6 is, for example, a semicircular groove (FIG. 7), a triangular groove (FIG. 8) or a rectangular groove.
　図３、図６及び図７に示されるように、第３主面５ａに、１つ以上の第１の溝６と連通する第２の溝７が形成されている。第２の溝７は、第３主面５ａの周縁部の少なくとも一部に沿って延在している。第２の溝７は、例えば、第３主面５ａの周縁部の全長の６０％以上にわたって延在している。第２の溝７は、例えば、第３主面５ａの周縁部の全長の８０％以上にわたって延在している。第２の溝７は、例えば、第３主面５ａの周縁部の全長にわたって延在している。第２の溝７は、０．１ｍｍ以上０．５ｍｍ以下の第２の幅ｗ2と０．１ｍｍ以上０．５ｍｍ以下の第２の深さｄ2とを有する。図３に示されるように、第２の溝７は、例えば、傾斜溝（図３）、凹曲面溝（図４）、凸曲面溝（図５）または矩形溝である。 As shown in FIGS. 3, 6, and 7, a second groove 7 communicating with one or more first grooves 6 is formed on the third main surface 5a. The second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a. The second groove 7 extends over, for example, 60% or more of the entire length of the peripheral portion of the third main surface 5a. The second groove 7 extends over, for example, 80% or more of the entire length of the peripheral portion of the third main surface 5a. The second groove 7 extends, for example, over the entire length of the peripheral portion of the third main surface 5a. The second groove 7, and a second depth of 0.1mm or more 0.5mm or less following the second width w 2 and 0.1mm or more 0.5mm d 2. As shown in FIG. 3, the second groove 7 is, for example, an inclined groove (FIG. 3), a concave curved groove (FIG. 4), a convex curved groove (FIG. 5), or a rectangular groove.
　第２金属層８は、絶縁基板４の第２主面４ｂ上に設けられている。第２金属層８は、絶縁基板４に面する第５主面８ａと、第５主面８ａとは反対側の第６主面８ｂと、第５主面８ａと第６主面８ｂとを接続する第３側面８ｃとを含む。第２金属層８は、例えば、銅またはアルミニウム製である。 The second metal layer 8 is provided on the second main surface 4b of the insulating substrate 4. The second metal layer 8 includes a fifth main surface 8a facing the insulating substrate 4, a sixth main surface 8b opposite to the fifth main surface 8a, a fifth main surface 8a, and a sixth main surface 8b. And a third side surface 8c to be connected. The second metal layer 8 is made of, for example, copper or aluminum.
　図１に示されるように、絶縁基板４の第１側面４ｃと第１金属層５の第２側面５ｃとの間の第１間隔Ｄ1は、絶縁基板４の第１側面４ｃと第２金属層８の第３側面８ｃとの間の第２間隔Ｄ2に実質的に等しい。本明細書において、第１間隔Ｄ1が第２間隔Ｄ2に実質的に等しいことは、第１間隔Ｄ1が第２間隔Ｄ2の９０％以上１１０％以下であることを意味する。第１間隔Ｄ1は、例えば、第２間隔Ｄ2の９０％以上１００％以下であってもよい。第２金属層８は、第１金属層部分９と、第１金属層部分９から間隔を空けて配置されている第２金属層部分１０とを含む。 As shown in FIG. 1, the first distance D 1 of the between the second side surface 5c of the first side face 4c and the first metal layer 5 of the insulating substrate 4, the first side 4c and the second metal insulating substrate 4 substantially equal to the second distance D 2 between the third side surface 8c of the layer 8. In this specification, the first distance D 1 is substantially equal to the second distance D 2, which means that the first distance D 1 is less than 110% 90% of the second distance D 2. The first interval D 1 may be, for example, 90% or more and 100% or less of the second interval D 2 . The second metal layer 8 includes a first metal layer portion 9 and a second metal layer portion 10 spaced from the first metal layer portion 9.
　半導体素子２０は、例えば、絶縁ゲート型バイポーラトランジスタ（ＩＧＢＴ）、金属酸化物半導体電界効果トランジスタ（ＭＯＳＦＥＴ）またはダイオードのようなパワー半導体素子である。半導体素子２０は、例えば、シリコン（Ｓｉ）、または、炭化珪素（ＳｉＣ）、窒化ガリウム（ＧａＮ）もしくはダイヤモンドのようなワイドバンドギャップ半導体材料で形成されている。 The semiconductor device 20 is, for example, a power semiconductor device such as an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a diode. The semiconductor element 20 is formed of, for example, silicon (Si) or a wide band gap semiconductor material such as silicon carbide (SiC), gallium nitride (GaN), or diamond.
　半導体素子２０は、第２金属層８に接合されている。具体的には、半導体素子２０は、第１導電接合部材２１を用いて、第２金属層８の第１金属層部分９の第６主面８ｂに接合されている。第１導電接合部材２１は、例えば、はんだ、または、銀フィラーもしくは銅フィラーのような金属フィラーが樹脂に分散された導電性接着剤である。第１導電接合部材２１は、例えば、銀ナノ粒子もしくは銅ナノ粒子のような金属ナノ粒子を３００℃以下の低温で焼成することによって形成された焼結接合部材である。半導体素子２０は、導電ワイヤ２３を用いて、第２金属層８の第２金属層部分１０に電気的に接続されている。 The semiconductor element 20 is joined to the second metal layer 8. Specifically, the semiconductor element 20 is joined to the sixth main surface 8 b of the first metal layer portion 9 of the second metal layer 8 using the first conductive joining member 21. The first conductive bonding member 21 is, for example, a solder or a conductive adhesive in which a metal filler such as a silver filler or a copper filler is dispersed in a resin. The first conductive bonding member 21 is, for example, a sintered bonding member formed by firing metal nanoparticles such as silver nanoparticles or copper nanoparticles at a low temperature of 300 ° C. or less. The semiconductor element 20 is electrically connected to the second metal layer portion 10 of the second metal layer 8 using a conductive wire 23.
　第１リード端子２５が、第２導電接合部材２７を用いて第１金属層部分９に接合されている。第２リード端子２６が、第３導電接合部材２８を用いて第２金属層部分１０に接合されている。第２導電接合部材２７及び第３導電接合部材２８は、例えば、はんだ、または、銀フィラーもしくは銅フィラーのような金属フィラーが樹脂に分散された導電性接着剤である。第１リード端子２５及び第２リード端子２６は、蓋部３９を貫通してパワーモジュール１の外部に引き出されている。 The first lead terminal 25 is joined to the first metal layer portion 9 using the second conductive joining member 27. The second lead terminal 26 is joined to the second metal layer portion 10 using a third conductive joining member 28. The second conductive bonding member 27 and the third conductive bonding member 28 are, for example, solder or a conductive adhesive in which a metal filler such as a silver filler or a copper filler is dispersed in a resin. The first lead terminal 25 and the second lead terminal 26 are drawn out of the power module 1 through the cover 39.
　第１絶縁樹脂部３３は、ベース板３０と第１主面４ａとの間に設けられている。第１金属層５の第２側面５ｃと絶縁基板４の第１主面４ａとによって形成される第１角部１７の少なくとも一部は、第１絶縁樹脂部３３で覆われている。第１角部１７の少なくとも一部は第１絶縁樹脂部３３で覆われているため、第２側面５ｃの少なくとも一部と第１主面４ａの一部とは、第１絶縁樹脂部３３で覆われている。特定的には、第１角部１７の全ては、第１絶縁樹脂部３３で覆われている。第１絶縁樹脂部３３は、第２側面５ｃに形成されている１つ以上の第１の溝６内に設けられている。 The first insulating resin portion 33 is provided between the base plate 30 and the first main surface 4a. At least a part of the first corner portion 17 formed by the second side surface 5c of the first metal layer 5 and the first main surface 4a of the insulating substrate 4 is covered with the first insulating resin portion 33. Since at least a portion of the first corner portion 17 is covered with the first insulating resin portion 33, at least a portion of the second side surface 5c and a portion of the first main surface 4a are joined by the first insulating resin portion 33. Covered. Specifically, all of the first corner portions 17 are covered with the first insulating resin portion 33. The first insulating resin portion 33 is provided in one or more first grooves 6 formed on the second side surface 5c.
　第１金属層５から露出している絶縁基板４の第１主面４ａの第１周縁部４ｐは、第１角部１７に近位の第１領域４ｑと、第１領域４ｑに隣接しかつ第１角部１７から遠位の第２領域４ｒとを含む。第１領域４ｑは、第１絶縁樹脂部３３で覆われている。第２領域４ｒは、第１絶縁樹脂部３３から露出している。第１角部１７からの第１領域４ｑの幅Ｗは、例えば、最大で第１角部１７から第２角部４ｄまでの距離Ｄ（第１周縁部４ｐの幅）の二分の一以下である。第２領域４ｒは、第１領域４ｑよりも広い面積を有している。 The first peripheral portion 4p of the first main surface 4a of the insulating substrate 4 exposed from the first metal layer 5 is adjacent to the first region 4q close to the first corner 17 and the first region 4q, and And a second region 4r distal from the first corner 17. The first region 4q is covered with the first insulating resin part 33. The second region 4r is exposed from the first insulating resin part 33. The width W of the first region 4q from the first corner 17 is, for example, not more than half of the distance D (the width of the first peripheral portion 4p) from the first corner 17 to the second corner 4d. is there. The second region 4r has a larger area than the first region 4q.
　幅Ｗは、例えば、最大で距離Ｄの三分の一以下であってもよい。幅Ｗは、例えば、最大で距離Ｄの四分の一以下であってもよい。幅Ｗは、例えば、最大で距離Ｄの五分の一以下であってもよい。幅Ｗは、例えば、最大で距離Ｄの六分の一以下であってもよい。幅Ｗは、例えば、最大で距離Ｄの八分の一以下であってもよい。幅Ｗは、例えば、最大で距離Ｄの十分の一以下であってもよい。幅Ｗは、例えば、少なくとも０．１ｍｍ以上である。そのため、パワーモジュール１の動作時に電気力線５０（図９を参照）が集中する第１角部１７の少なくとも一部は、第１絶縁樹脂部３３によってより確実に覆われて、パワーモジュール１の絶縁耐圧がより確実に向上する。幅Ｗは、例えば、少なくとも０．２ｍｍ以上であってもよい。幅Ｗは、例えば、最大で１．０ｍｍ以下である。幅Ｗは、例えば、最大で０．５ｍｍ以下であってもよい。 The width W may be, for example, at most one-third or less of the distance D. The width W may be, for example, at most a quarter of the distance D or less. The width W may be, for example, at most one fifth or less of the distance D. The width W may be, for example, at most one-sixth or less of the distance D. The width W may be, for example, at most one-eighth of the distance D. The width W may be, for example, not more than one tenth of the distance D at the maximum. The width W is, for example, at least 0.1 mm or more. Therefore, at least a part of the first corner portion 17 where the electric lines of force 50 (see FIG. 9) are concentrated when the power module 1 operates is more reliably covered with the first insulating resin portion 33, and the power module 1 The dielectric strength is more reliably improved. The width W may be, for example, at least 0.2 mm or more. The width W is, for example, at most 1.0 mm or less. The width W may be, for example, at most 0.5 mm or less.
　第１金属層５とは反対側の第１絶縁樹脂部３３の表面３３ｓは、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面である。第１絶縁樹脂部３３は、ベース板３０の側から第１主面４ａの側に向かうにつれて収束する形状を有している。そのため、絶縁回路基板３と第１絶縁樹脂部３３との間の接触面積と、絶縁基板４の第１主面４ａとベース板３０との間の空間に占める第１絶縁樹脂部３３の体積比率とが、減少され得る。 The surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is. The first insulating resin portion 33 has a shape that converges from the base plate 30 side to the first main surface 4a side. Therefore, the contact area between the insulating circuit board 3 and the first insulating resin portion 33 and the volume ratio of the first insulating resin portion 33 occupying the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 Can be reduced.
　絶縁基板４の第１主面４ａとベース板３０との間の空間に占める第１絶縁樹脂部３３の体積比率は、例えば、５０％以下である。絶縁基板４の第１主面４ａとベース板３０との間の空間に占める第１絶縁樹脂部３３の体積比率は、例えば、４０％以下である。絶縁基板４の第１主面４ａとベース板３０との間の空間に占める第１絶縁樹脂部３３の体積比率は、例えば、３０％以下である。絶縁基板４の第１主面４ａとベース板３０との間の空間に占める第１絶縁樹脂部３３の体積比率は、例えば、２０％以下である。絶縁基板４の第１主面４ａとベース板３０との間の空間に占める第１絶縁樹脂部３３の体積比率は、例えば、１００×Ｈ2／（Ｈ1＋Ｈ2）％以上である（Ｈ1は第１金属層５の厚さであり、Ｈ2は接合部材３１の厚さである）。 The volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 50% or less. The volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 40% or less. The volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 30% or less. The volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 20% or less. The volume ratio of the first insulating resin portion 33 in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30 is, for example, 100 × H 2 / (H 1 + H 2 )% or more (H 1 is the thickness of the first metal layer 5, H 2 is the thickness of the bonding member 31).
　絶縁基板４の第２主面４ｂの平面視において、第１絶縁樹脂部３３は、絶縁基板４の外側に延在している。図９に示されるように、パワーモジュール１の動作時に、第３側面８ｃと第２主面４ｂとによって形成される第３角部１８にも電気力線５０が集中している。仮に、第３角部１８において部分放電が発生しても、部分放電は、図１０に示される経路５２に沿って進展する。具体的には、部分放電は、第３角部１８から第２主面４ｂに沿って進展して、第４角部４ｅに達する。それから、部分放電は、第４角部４ｅから第１側面４ｃに沿って進展して、第２角部４ｄに達する。それから、部分放電は、第２角部４ｄから封止部材４０中を進展して、第２角部４ｄの直下の第１絶縁樹脂部３３の表面３３ｓの部分３３ｅに達する。それから、部分放電は、部分３３ｅから第１金属層５とは反対方向に第１絶縁樹脂部３３の表面３３ｓに沿って進展して、ベース板３０に達する。部分放電がベース板３０に達すると、パワーモジュール１は絶縁破壊される。 に お い て The first insulating resin portion 33 extends outside the insulating substrate 4 in a plan view of the second main surface 4b of the insulating substrate 4. As shown in FIG. 9, when the power module 1 operates, the electric lines of force 50 are also concentrated on the third corner 18 formed by the third side surface 8c and the second main surface 4b. Even if a partial discharge occurs in the third corner portion 18, the partial discharge proceeds along the path 52 shown in FIG. Specifically, the partial discharge advances from the third corner 18 along the second main surface 4b and reaches the fourth corner 4e. Then, the partial discharge extends from the fourth corner 4e along the first side surface 4c and reaches the second corner 4d. Then, the partial discharge propagates through the sealing member 40 from the second corner 4d and reaches the portion 33e of the surface 33s of the first insulating resin portion 33 immediately below the second corner 4d. Then, the partial discharge proceeds from the portion 33 e in the direction opposite to the first metal layer 5 along the surface 33 s of the first insulating resin portion 33 and reaches the base plate 30. When the partial discharge reaches the base plate 30, the power module 1 is broken down.
　このように、絶縁基板４の第２主面４ｂの平面視において、第１絶縁樹脂部３３は、絶縁基板４の外側に延在しているため、部分放電の経路５２を長くすることができる。パワーモジュール１が絶縁破壊に至るまでのパワーモジュール１の寿命を長くすることができる。パワーモジュール１の信頼性が向上する。 As described above, in plan view of the second main surface 4b of the insulating substrate 4, the first insulating resin portion 33 extends outside the insulating substrate 4, so that the path 52 of the partial discharge can be lengthened. . The life of the power module 1 until the power module 1 reaches dielectric breakdown can be extended. The reliability of the power module 1 is improved.
　第１絶縁樹脂部３３は、第２の溝７内にさらに設けられている。第１絶縁樹脂部３３は、例えば、第２の溝７の全長の８０％以上の長さにわたって、第２の溝７内に設けられている。第１絶縁樹脂部３３は、例えば、第２の溝７の全長の９０％以上の長さにわたって、第２の溝７内に設けられている。第１絶縁樹脂部３３は、例えば、第２の溝７の全長にわたって、第２の溝７内に設けられている。 The first insulating resin portion 33 is further provided in the second groove 7. The first insulating resin portion 33 is provided in the second groove 7 over, for example, 80% or more of the entire length of the second groove 7. The first insulating resin portion 33 is provided in the second groove 7 over, for example, 90% or more of the entire length of the second groove 7. The first insulating resin portion 33 is provided in the second groove 7 over the entire length of the second groove 7, for example.
　第１絶縁樹脂部３３は、封止部材４０と異なる材料で形成されている。第１絶縁樹脂部３３は、例えば、シリコーンゴムまたはポリイミド樹脂で形成されている。第１絶縁樹脂部３３は、封止部材４０よりも絶縁基板４に対する密着性が高い。そのため、第１角部１７において部分放電が発生することが抑制される。第１絶縁樹脂部３３は、封止部材４０よりも低い誘電率を有してもよい。そのため、第１角部１７における電界強度が減少し、第１角部１７において部分放電が発生することが抑制される。 The first insulating resin portion 33 is formed of a material different from that of the sealing member 40. The first insulating resin portion 33 is formed of, for example, silicone rubber or polyimide resin. The first insulating resin portion 33 has higher adhesion to the insulating substrate 4 than the sealing member 40. Therefore, occurrence of partial discharge in the first corner portion 17 is suppressed. The first insulating resin part 33 may have a lower dielectric constant than the sealing member 40. Therefore, the electric field intensity at the first corner 17 is reduced, and the occurrence of partial discharge at the first corner 17 is suppressed.
　図１を参照して、外囲体３７は、接着剤３８を用いてベース板３０に接合されている。外囲体３７は、例えば、ポリフェニレンサルファイド（ＰＰＳ）樹脂、エポキシ樹脂、ポリイミド樹脂、アクリル樹脂または液晶ポリマー（ＬＣＰ）のような電気的絶縁性を有する樹脂で形成されている。 を Referring to FIG. 1, outer casing 37 is joined to base plate 30 using adhesive 38. The outer enclosure 37 is formed of, for example, a resin having an electrical insulation property such as a polyphenylene sulfide (PPS) resin, an epoxy resin, a polyimide resin, an acrylic resin, or a liquid crystal polymer (LCP).
　封止部材４０は、外囲体３７の内側に設けられている。封止部材４０は、半導体素子２０を封止している。封止部材４０は、絶縁基板４をさらに封止している。封止部材４０は、導電ワイヤ２３をさらに封止している。封止部材４０は、電気的絶縁性を有している。封止部材４０は、例えば、シリコーンゲルまたはエポキシ樹脂のような絶縁樹脂材料で形成されている。 The sealing member 40 is provided inside the outer enclosure 37. The sealing member 40 seals the semiconductor element 20. The sealing member 40 further seals the insulating substrate 4. The sealing member 40 further seals the conductive wire 23. The sealing member 40 has electrical insulation. The sealing member 40 is formed of, for example, an insulating resin material such as silicone gel or epoxy resin.
　蓋部３９は、エポキシ樹脂、ポリイミド樹脂、アクリル樹脂または液晶ポリマー（ＬＣＰ）のような電気的絶縁性を有する樹脂で形成されている。蓋部３９は、封止部材４０を覆い、外囲体３７の開口を閉塞している。 (4) The lid 39 is made of an electrically insulating resin such as an epoxy resin, a polyimide resin, an acrylic resin, or a liquid crystal polymer (LCP). The lid 39 covers the sealing member 40 and closes the opening of the outer enclosure 37.
　図１１及び図１２を参照して、実施の形態１のパワーモジュール１の製造方法を説明する。 製造 A method for manufacturing the power module 1 according to the first embodiment will be described with reference to FIGS.
　本実施の形態のパワーモジュール１の製造方法は、絶縁回路基板３を準備すること（Ｓ１）を備える。絶縁回路基板３は、絶縁基板４と、第１金属層５と、第２金属層８とを含む。第１金属層５の第２側面５ｃに、１つ以上の第１の溝６が形成されている。１つ以上の第１の溝６は、第１金属層５の第３主面５ａから第４主面５ｂに向かって延在している。第１金属層５の第３主面５ａに、１つ以上の第１の溝６と連通する第２の溝７が形成されている。第２の溝７は、第３主面５ａの周縁部の少なくとも一部に沿って延在している。具体的には、１つ以上の第１の溝６及び第２の溝７は、第１金属層５の第２側面５ｃにレーザー加工、機械加工またはエッチングを施すことによって形成される。第１金属層５が絶縁基板４の第１主面４ａに貼り付けられる。第２金属層８が絶縁基板４の第２主面４ｂに貼り付けられる。こうして、絶縁回路基板３が得られる。 製造 The method for manufacturing the power module 1 according to the present embodiment includes preparing the insulated circuit board 3 (S1). The insulating circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8. One or more first grooves 6 are formed in the second side surface 5 c of the first metal layer 5. One or more first grooves 6 extend from the third main surface 5a of the first metal layer 5 toward the fourth main surface 5b. On the third main surface 5a of the first metal layer 5, a second groove 7 communicating with one or more first grooves 6 is formed. The second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a. Specifically, one or more first grooves 6 and second grooves 7 are formed by performing laser processing, mechanical processing, or etching on the second side surface 5c of the first metal layer 5. First metal layer 5 is attached to first main surface 4 a of insulating substrate 4. Second metal layer 8 is attached to second main surface 4b of insulating substrate 4. Thus, the insulated circuit board 3 is obtained.
　本実施の形態のパワーモジュール１の製造方法は、ベース板３０上に絶縁回路基板３を設けること（Ｓ２）を備える。具体的には、ベース板３０の一部上に、ソルダーレジスト層３２が形成される。ソルダーレジスト層３２は開口部を有している。ベース板３０の一部上にソルダーレジスト材料を塗布し、ソルダーレジスト材料を硬化させることによって、ソルダーレジスト層３２が形成される。それから、ソルダーレジスト層３２の開口部に、はんだのような接合部材３１が設けられる。絶縁回路基板３は、接合部材３１を用いて、ベース板３０に接合される。 製造 The method for manufacturing the power module 1 according to the present embodiment includes providing the insulated circuit board 3 on the base plate 30 (S2). Specifically, a solder resist layer 32 is formed on a part of the base plate 30. The solder resist layer 32 has an opening. The solder resist layer 32 is formed by applying a solder resist material on a part of the base plate 30 and curing the solder resist material. Then, the joining member 31 such as solder is provided in the opening of the solder resist layer 32. The insulated circuit board 3 is joined to the base plate 30 using a joining member 31.
　本実施の形態のパワーモジュール１の製造方法は、絶縁回路基板３の第２金属層８に半導体素子２０を接合すること（Ｓ３）を備える。具体的には、半導体素子２０は、第１導電接合部材２１を用いて、第２金属層８の第１金属層部分９に接合される。第１導電接合部材２１は、例えば、はんだ、導電性接着剤または焼結接合部材である。第２金属層８に半導体素子２０を接合すること（Ｓ３）は、ベース板３０上に絶縁回路基板３を設けること（Ｓ２）の前に行われてもよい。 The method for manufacturing the power module 1 according to the present embodiment includes bonding the semiconductor element 20 to the second metal layer 8 of the insulated circuit board 3 (S3). Specifically, the semiconductor element 20 is bonded to the first metal layer portion 9 of the second metal layer 8 using the first conductive bonding member 21. The first conductive bonding member 21 is, for example, a solder, a conductive adhesive, or a sintered bonding member. Joining the semiconductor element 20 to the second metal layer 8 (S3) may be performed before providing the insulating circuit board 3 on the base plate 30 (S2).
　本実施の形態のパワーモジュール１の製造方法は、ベース板３０と絶縁基板４の第１主面４ａとの間に第１絶縁樹脂部３３を設けること（Ｓ４）を備える。第１金属層５の第２側面５ｃと絶縁基板４の第１主面４ａとによって形成される第１角部１７の少なくとも一部は、第１絶縁樹脂部３３で覆われる。第１金属層５とは反対側の第１絶縁樹脂部３３の表面３３ｓは、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面である。第１絶縁樹脂部３３は、ベース板３０の側から第１主面４ａの側に向かうにつれて収束する形状を有している。特定的には、第１角部１７の全周は、第１絶縁樹脂部３３で覆われる。絶縁基板４の第２主面４ｂの平面視において、第１絶縁樹脂部３３は、絶縁基板４の外側に延在している。 The method for manufacturing the power module 1 of the present embodiment includes providing the first insulating resin portion 33 between the base plate 30 and the first main surface 4a of the insulating substrate 4 (S4). At least a part of the first corner portion 17 formed by the second side surface 5c of the first metal layer 5 and the first main surface 4a of the insulating substrate 4 is covered with the first insulating resin portion 33. The surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is. The first insulating resin portion 33 has a shape that converges from the base plate 30 side to the first main surface 4a side. Specifically, the entire circumference of the first corner portion 17 is covered with the first insulating resin portion 33. In a plan view of the second main surface 4 b of the insulating substrate 4, the first insulating resin portion 33 extends outside the insulating substrate 4.
　具体的には、ベース板３０と絶縁基板４の第１主面４ａとの間に第１絶縁樹脂材料を供給する（Ｓ４１）。例えば、１つ以上の第１の溝６のベース板３０の側の部分内に第１絶縁樹脂材料を供給する（Ｓ４２）。ソルダーレジスト層３２上に第１絶縁樹脂材料を塗布する。第１絶縁樹脂材料は、絶縁基板４の第１主面４ａとベース板３０との間の空間のうちベース板３０の側の部分にのみ供給される。それから、１つ以上の第１の溝６における毛細管現象によって、第１絶縁樹脂材料は、１つ以上の第１の溝６を通して第１角部１７の少なくとも一部に供給される（Ｓ４３）。こうして、第１角部１７の少なくとも一部は、第１絶縁樹脂材料によって覆われる。 Specifically, a first insulating resin material is supplied between the base plate 30 and the first main surface 4a of the insulating substrate 4 (S41). For example, the first insulating resin material is supplied into a portion of the one or more first grooves 6 on the side of the base plate 30 (S42). A first insulating resin material is applied on the solder resist layer 32. The first insulating resin material is supplied only to a portion on the base plate 30 side in the space between the first main surface 4a of the insulating substrate 4 and the base plate 30. Then, the first insulating resin material is supplied to at least a part of the first corner 17 through the one or more first grooves 6 by the capillary action in the one or more first grooves 6 (S43). Thus, at least a part of the first corner portion 17 is covered with the first insulating resin material.
　第２の溝７は、１つ以上の第１の溝６と連通している。１つ以上の第１の溝６における毛細管現象によって１つ以上の第１の溝６を這い上がる第１絶縁樹脂材料は、第２の溝７に供給される。１つ以上の第１の溝６から第２の溝７に供給された第１絶縁樹脂材料は、第２の溝７における毛細管現象によって、第２の溝７内に拡げられる（Ｓ４４）。こうして、第１絶縁樹脂材料は、第２の溝７内に設けられる。 The second groove 7 communicates with one or more first grooves 6. The first insulating resin material crawling up the one or more first grooves 6 by the capillary action in the one or more first grooves 6 is supplied to the second grooves 7. The first insulating resin material supplied from the one or more first grooves 6 to the second grooves 7 is expanded into the second grooves 7 by capillary action in the second grooves 7 (S44). Thus, the first insulating resin material is provided in the second groove 7.
　それから、第１絶縁樹脂材料に脱泡処理を施す（Ｓ４５）。具体的には、減圧雰囲気中に第１絶縁樹脂材料を保持して、第１絶縁樹脂材料は脱泡される。それから、第１絶縁樹脂材料を硬化させる（Ｓ４６）。こうして、第１絶縁樹脂部３３が形成される。 (4) Then, the first insulating resin material is subjected to defoaming treatment (S45). Specifically, the first insulating resin material is held in a reduced pressure atmosphere, and the first insulating resin material is defoamed. Then, the first insulating resin material is cured (S46). Thus, the first insulating resin portion 33 is formed.
　本実施の形態のパワーモジュール１の製造方法は、半導体素子２０に電気配線（例えば、導電ワイヤ２３、第１リード端子２５及び第２リード端子２６）を施すこと（Ｓ６）を備える。具体的には、導電ワイヤ２３は、半導体素子２０と第２金属層８の第２金属層部分１０とにボンディングされる。第１リード端子２５が、第２導電接合部材２７を用いて第２金属層８の第１金属層部分９に接合される。第２リード端子２６が、第３導電接合部材２８を用いて第２金属層８の第２金属層部分１０に接合される。半導体素子２０に電気配線を施すこと（Ｓ６）は、第１絶縁樹脂部３３を設けること（Ｓ４）の前に行われてもよい。 The method for manufacturing the power module 1 according to the present embodiment includes providing electric wiring (for example, the conductive wire 23, the first lead terminal 25, and the second lead terminal 26) to the semiconductor element 20 (S6). Specifically, the conductive wire 23 is bonded to the semiconductor element 20 and the second metal layer portion 10 of the second metal layer 8. The first lead terminal 25 is joined to the first metal layer portion 9 of the second metal layer 8 using the second conductive joining member 27. The second lead terminal 26 is joined to the second metal layer portion 10 of the second metal layer 8 using a third conductive joining member 28. The application of the electric wiring to the semiconductor element 20 (S6) may be performed before the provision of the first insulating resin portion 33 (S4).
　本実施の形態のパワーモジュール１の製造方法は、封止部材４０を用いて半導体素子２０を封止すること（Ｓ７）を備える。具体的には、外囲体３７は、接着剤３８を用いてベース板３０に接合される。封止部材４０は、外囲体３７の内側に設けられる。具体的には、封止材料を外囲体３７の内側に注入する。それから封止材料を硬化させる。封止部材４０は、蓋部３９で覆われる。外囲体３７の開口は、蓋部３９で閉塞される。第１リード端子２５及び第２リード端子２６は、蓋部３９を貫通してパワーモジュール１の外部に引き出される。こうして、パワーモジュール１が得られる。 The method for manufacturing the power module 1 of the present embodiment includes sealing the semiconductor element 20 using the sealing member 40 (S7). Specifically, the outer enclosure 37 is joined to the base plate 30 using an adhesive 38. The sealing member 40 is provided inside the outer enclosure 37. Specifically, a sealing material is injected into the inside of the outer enclosure 37. The sealing material is then cured. The sealing member 40 is covered with the lid 39. The opening of the outer enclosure 37 is closed by a lid 39. The first lead terminal 25 and the second lead terminal 26 are drawn out of the power module 1 through the cover 39. Thus, the power module 1 is obtained.
　本実施の形態のパワーモジュール１及びその製造方法は、以下の効果を奏する。
　本実施の形態のパワーモジュール１は、ベース板３０と、絶縁回路基板３と、半導体素子２０と、第１絶縁樹脂部３３とを備える。絶縁回路基板３は、ベース板３０上に設けられている。絶縁回路基板３は、絶縁基板４と、第１金属層５と、第２金属層８とを含む。絶縁基板４は、ベース板３０に面する第１主面４ａと、第１主面４ａとは反対側の第２主面４ｂと、第１主面４ａと第２主面４ｂとを接続する第１側面４ｃとを含む。第１金属層５は、絶縁基板４の第１主面４ａ上に設けられている。第２金属層８は、絶縁基板４の第２主面４ｂ上に設けられている。半導体素子２０は、第２金属層８に接合されている。第１絶縁樹脂部３３は、ベース板３０と第１主面４ａとの間に設けられている。 The power module 1 of the present embodiment and the method of manufacturing the same have the following effects.
The power module 1 of the present embodiment includes a base plate 30, an insulated circuit board 3, a semiconductor element 20, and a first insulating resin portion 33. The insulated circuit board 3 is provided on the base plate 30. The insulating circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8. The insulating substrate 4 connects the first main surface 4a facing the base plate 30, the second main surface 4b opposite to the first main surface 4a, and the first main surface 4a and the second main surface 4b. And a first side surface 4c. The first metal layer 5 is provided on the first main surface 4a of the insulating substrate 4. The second metal layer 8 is provided on the second main surface 4b of the insulating substrate 4. The semiconductor element 20 is joined to the second metal layer 8. The first insulating resin portion 33 is provided between the base plate 30 and the first main surface 4a.
　第１金属層５は、絶縁基板４に面する第３主面５ａと、ベース板３０に面する第４主面５ｂと、第３主面５ａと第４主面５ｂとを接続する第２側面５ｃとを含む。第２側面５ｃと第１主面４ａとによって形成される第１角部１７の少なくとも一部は、第１絶縁樹脂部３３で覆われている。第１金属層５から露出している第１主面４ａの第１周縁部４ｐは、第１角部１７に近位の第１領域４ｑと、第１領域４ｑに隣接しかつ第１角部１７から遠位の第２領域４ｒとを含む。第１領域４ｑは第１絶縁樹脂部３３で覆われている。第２領域４ｒは、第１絶縁樹脂部３３から露出している。第１金属層５とは反対側の第１絶縁樹脂部３３の表面３３ｓは、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面である。 The first metal layer 5 includes a third main surface 5a facing the insulating substrate 4, a fourth main surface 5b facing the base plate 30, and a second main surface 5a connecting the third main surface 5a and the fourth main surface 5b. And a side surface 5c. At least a part of the first corner portion 17 formed by the second side surface 5c and the first main surface 4a is covered with the first insulating resin portion 33. The first peripheral portion 4p of the first main surface 4a exposed from the first metal layer 5 has a first region 4q which is close to the first corner 17 and a first corner which is adjacent to the first region 4q. 17 and a second region 4r distal to 17. The first region 4q is covered with the first insulating resin portion 33. The second region 4r is exposed from the first insulating resin part 33. The surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is.
　そのため、絶縁基板４の第１主面４ａとベース板３０との間に第１絶縁樹脂部３３を設ける際に第１絶縁樹脂部３３内に気泡が噛み込まれても、気泡は第１絶縁樹脂部３３と第１主面４ａとの間の隙間に抜ける。第１絶縁樹脂部３３内に気泡が残存することが抑制される。また、絶縁回路基板３と第１絶縁樹脂部３３との間の接触面積が減少する。パワーモジュール１の動作中に、絶縁回路基板３と第１絶縁樹脂部３３との間の熱膨張係数の差に起因して第１絶縁樹脂部３３へ印加される応力が減少する。絶縁回路基板３と第１絶縁樹脂部３３との間の熱膨張係数の差に起因して、第１絶縁樹脂部３３にクラックが発生することが防止される。さらに、パワーモジュール１の動作時に電気力線５０が集中する第１角部１７の少なくとも一部は、第１絶縁樹脂部３３によって覆われている。こうして、パワーモジュール１の絶縁耐圧が向上する。パワーモジュール１の信頼性が向上する。 Therefore, even when air bubbles are caught in the first insulating resin portion 33 when the first insulating resin portion 33 is provided between the first main surface 4a of the insulating substrate 4 and the base plate 30, the air bubbles remain in the first insulating resin portion 33. It escapes into the gap between the resin part 33 and the first main surface 4a. Residual air bubbles in the first insulating resin portion 33 are suppressed. Further, the contact area between the insulating circuit board 3 and the first insulating resin portion 33 is reduced. During the operation of the power module 1, the stress applied to the first insulating resin part 33 due to the difference in thermal expansion coefficient between the insulating circuit board 3 and the first insulating resin part 33 decreases. Cracks are prevented from occurring in the first insulating resin portion 33 due to the difference in thermal expansion coefficient between the insulating circuit board 3 and the first insulating resin portion 33. Further, at least a part of the first corner portion 17 where the electric lines of force 50 are concentrated when the power module 1 operates is covered with the first insulating resin portion 33. Thus, the withstand voltage of the power module 1 is improved. The reliability of the power module 1 is improved.
　本実施の形態のパワーモジュール１では、第２側面５ｃに１つ以上の第１の溝６が形成されている。１つ以上の第１の溝６は、第３主面５ａから第４主面５ｂに向かって延在している。第１絶縁樹脂部３３は、１つ以上の第１の溝６内に設けられている。そのため、１つ以上の第１の溝６における毛細管現象を利用して、第１絶縁樹脂部３３が第１角部１７の少なくとも一部を覆いながら、第１主面４ａの第２領域４ｒを第１絶縁樹脂部３３から露出させることができるとともに、第１絶縁樹脂部３３の表面３３ｓを、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面とすることができる。 パ ワ ー In power module 1 of the present embodiment, one or more first grooves 6 are formed in second side surface 5c. One or more first grooves 6 extend from the third main surface 5a toward the fourth main surface 5b. The first insulating resin portion 33 is provided in one or more first grooves 6. Therefore, the first insulating resin portion 33 covers at least a part of the first corner portion 17 while utilizing the capillary phenomenon in the one or more first grooves 6 to form the second region 4r of the first main surface 4a. While being able to be exposed from the first insulating resin portion 33, the inclination of the surface 33s of the first insulating resin portion 33 with respect to the first main surface 4a gradually increases from the base plate 30 toward the first main surface 4a. It can be an inclined surface that becomes larger.
　本実施の形態のパワーモジュール１では、１つ以上の第１の溝６は、０．１ｍｍ以下の第１の幅と０．１ｍｍ以下の第１の深さとを有する。そのため、１つ以上の第１の溝６における毛細管現象を利用して、第１絶縁樹脂部３３が第１角部１７の少なくとも一部を覆いながら、第１主面４ａの第２領域４ｒを第１絶縁樹脂部３３から露出させることができるとともに、第１絶縁樹脂部３３の表面３３ｓを、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面とすることができる。 で は In power module 1 of the present embodiment, one or more first grooves 6 have a first width of 0.1 mm or less and a first depth of 0.1 mm or less. Therefore, the first insulating resin portion 33 covers at least a part of the first corner portion 17 while utilizing the capillary phenomenon in the one or more first grooves 6 to form the second region 4r of the first main surface 4a. While being able to be exposed from the first insulating resin portion 33, the inclination of the surface 33s of the first insulating resin portion 33 with respect to the first main surface 4a gradually increases from the base plate 30 toward the first main surface 4a. It can be an inclined surface that becomes larger.
　本実施の形態のパワーモジュール１では、１つ以上の第１の溝６は、複数の第１の溝６である。複数の第１の溝６は、第３主面５ａの全周にわたって形成されている。そのため、第１角部１７のより広い範囲が、第１絶縁樹脂部３３によって覆われている。パワーモジュール１の絶縁耐圧が向上する。パワーモジュール１の信頼性が向上する。 で は In power module 1 of the present embodiment, one or more first grooves 6 are a plurality of first grooves 6. The plurality of first grooves 6 are formed over the entire circumference of the third main surface 5a. Therefore, a wider range of the first corner portion 17 is covered by the first insulating resin portion 33. The withstand voltage of the power module 1 is improved. The reliability of the power module 1 is improved.
　本実施の形態のパワーモジュール１では、第３主面５ａに、１つ以上の第１の溝６と連通する第２の溝７が形成されている。第２の溝７は、第３主面５ａの周縁部の少なくとも一部に沿って延在している。第１絶縁樹脂部３３は、第２の溝７内にも設けられている。そのため、第１角部１７のより広い範囲が、第１絶縁樹脂部３３によって覆われている。パワーモジュール１の絶縁耐圧が向上する。パワーモジュール１の信頼性が向上する。 パ ワ ー In the power module 1 of the present embodiment, a second groove 7 communicating with one or more first grooves 6 is formed in the third main surface 5a. The second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a. The first insulating resin part 33 is also provided in the second groove 7. Therefore, a wider range of the first corner portion 17 is covered by the first insulating resin portion 33. The withstand voltage of the power module 1 is improved. The reliability of the power module 1 is improved.
　本実施の形態のパワーモジュール１では、第２の溝７は、０．１ｍｍ以上０．５ｍｍ以下の第２の幅と０．１ｍｍ以上０．５ｍｍ以下の第２の深さとを有する。そのため、第２の溝７における毛細管現象を利用して、第１絶縁樹脂部３３が第２の溝７内に容易に設けられ得る。 パ ワ ー In power module 1 of the present embodiment, second groove 7 has a second width of 0.1 mm or more and 0.5 mm or less and a second depth of 0.1 mm or more and 0.5 mm or less. Therefore, the first insulating resin portion 33 can be easily provided in the second groove 7 by utilizing the capillary phenomenon in the second groove 7.
　本実施の形態のパワーモジュール１では、第２金属層８は、絶縁基板４に面する第５主面８ａと、第５主面８ａとは反対側の第６主面８ｂと、第５主面８ａと第６主面８ｂとを接続する第３側面８ｃとを含む。絶縁基板４の第１側面４ｃと第１金属層５の第２側面５ｃとの間の第１間隔Ｄ1は、絶縁基板４の第１側面４ｃと第２金属層８の第３側面８ｃとの間の第２間隔Ｄ2に実質的に等しい。そのため、本実施の形態のパワーモジュール１の第３主面５ａ及び第４主面５ｂは、第１間隔Ｄ1が第２間隔Ｄ2よりも大きな比較例のパワーモジュールの第３主面５ａ及び第４主面５ｂよりも大きい。本実施の形態のパワーモジュール１は、比較例のパワーモジュールよりも、半導体素子２０から発生する熱を、ベース板３０を通して、パワーモジュール１の外部に効率的に放散させることができる。パワーモジュール１の信頼性が向上する。 In power module 1 of the present embodiment, second metal layer 8 includes fifth main surface 8a facing insulating substrate 4, sixth main surface 8b opposite to fifth main surface 8a, and fifth main surface 8b. It includes a third side surface 8c connecting the surface 8a and the sixth main surface 8b. The first distance D 1 of the between the first side 4c and the second side surface 5c of the first metal layer 5 of the insulating substrate 4, and a third side surface 8c of the first side 4c and the second metal layer 8 of the insulating substrate 4 substantially equal to the second distance D 2 between. Therefore, the third main surface 5a and the fourth major surface 5b of the power module 1 of this embodiment, the third main surface 5a and the power module of the first distance D 1 is greater Comparative Example than the second distance D 2 It is larger than the fourth main surface 5b. The power module 1 of the present embodiment can more efficiently dissipate heat generated from the semiconductor element 20 to the outside of the power module 1 through the base plate 30 than the power module of the comparative example. The reliability of the power module 1 is improved.
　本実施の形態のパワーモジュール１では、第２主面４ｂの平面視において、第１絶縁樹脂部３３は、絶縁基板４の外側に延在している。そのため、パワーモジュール１における部分放電の経路５２を長くすることができ、パワーモジュール１が絶縁破壊に至るまでのパワーモジュール１の寿命を長くすることができる。パワーモジュール１の信頼性が向上する。 In the power module 1 of the present embodiment, the first insulating resin portion 33 extends outside the insulating substrate 4 in a plan view of the second main surface 4b. Therefore, the path 52 of the partial discharge in the power module 1 can be lengthened, and the life of the power module 1 until the power module 1 reaches dielectric breakdown can be lengthened. The reliability of the power module 1 is improved.
　本実施の形態のパワーモジュール１の製造方法は、ベース板３０上に絶縁回路基板３を設けること（Ｓ２）を備える。絶縁回路基板３は、絶縁基板４と、第１金属層５と、第２金属層８とを含む。絶縁基板４は、ベース板３０に面する第１主面４ａと、第１主面４ａとは反対側の第２主面４ｂと、第１主面４ａと第２主面４ｂとを接続する第１側面４ｃとを含む。第１金属層５は、絶縁基板４の第１主面４ａ上に設けられている。第２金属層８は、絶縁基板４の第２主面４ｂ上に設けられている。本実施の形態のパワーモジュール１の製造方法は、第２金属層８に半導体素子２０を接合すること（Ｓ３）と、ベース板３０と第１主面４ａとの間に第１絶縁樹脂部３３を設けること（Ｓ４）とを備える。 製造 The method for manufacturing the power module 1 according to the present embodiment includes providing the insulated circuit board 3 on the base plate 30 (S2). The insulating circuit board 3 includes an insulating substrate 4, a first metal layer 5, and a second metal layer 8. The insulating substrate 4 connects the first main surface 4a facing the base plate 30, the second main surface 4b opposite to the first main surface 4a, and the first main surface 4a and the second main surface 4b. And a first side surface 4c. The first metal layer 5 is provided on the first main surface 4a of the insulating substrate 4. The second metal layer 8 is provided on the second main surface 4b of the insulating substrate 4. The method for manufacturing the power module 1 according to the present embodiment includes joining the semiconductor element 20 to the second metal layer 8 (S3) and providing the first insulating resin portion 33 between the base plate 30 and the first main surface 4a. (S4).
　第１金属層５は、絶縁基板４に面する第３主面５ａと、ベース板３０に面する第４主面５ｂと、第３主面５ａと第４主面５ｂとを接続する第２側面５ｃとを含む。第２側面５ｃと第１主面４ａとによって形成される第１角部１７の少なくとも一部は、第１絶縁樹脂部３３で覆われている。第１金属層５から露出している第１主面４ａの第１周縁部４ｐは、第１角部１７に近位の第１領域４ｑと、第１領域４ｑに隣接しかつ第１角部１７から遠位の第２領域４ｒとを含む。第１領域４ｑは第１絶縁樹脂部３３で覆われている。第２領域４ｒは、第１絶縁樹脂部３３から露出している。第１金属層５とは反対側の第１絶縁樹脂部３３の表面３３ｓは、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面である。 The first metal layer 5 includes a third main surface 5a facing the insulating substrate 4, a fourth main surface 5b facing the base plate 30, and a second main surface 5a connecting the third main surface 5a and the fourth main surface 5b. And a side surface 5c. At least a part of the first corner portion 17 formed by the second side surface 5c and the first main surface 4a is covered with the first insulating resin portion 33. The first peripheral portion 4p of the first main surface 4a exposed from the first metal layer 5 has a first region 4q which is close to the first corner 17 and a first corner which is adjacent to the first region 4q. 17 and a second region 4r distal to 17. The first region 4q is covered with the first insulating resin portion 33. The second region 4r is exposed from the first insulating resin part 33. The surface 33s of the first insulating resin portion 33 opposite to the first metal layer 5 has an inclined surface whose inclination with respect to the first main surface 4a gradually increases from the base plate 30 side toward the first main surface 4a. It is.
　そのため、絶縁基板４の第１主面４ａとベース板３０との間に第１絶縁樹脂部３３を設ける際に第１絶縁樹脂部３３内に気泡が噛み込まれても、気泡は第１絶縁樹脂部３３と第１主面４ａとの間の隙間に抜ける。第１絶縁樹脂部３３内に気泡が残存することが抑制される。また、絶縁回路基板３と第１絶縁樹脂部３３との間の接触面積が減少する。パワーモジュール１の動作中に、絶縁回路基板３と第１絶縁樹脂部３３との間の熱膨張係数の差に起因して第１絶縁樹脂部３３へ印加される応力が減少する。絶縁回路基板３と第１絶縁樹脂部３３との間の熱膨張係数の差に起因して、第１絶縁樹脂部３３にクラックが発生することが防止される。さらに、パワーモジュール１の動作時に電気力線５０が集中する第１角部１７の少なくとも一部は、第１絶縁樹脂部３３によって覆われている。パワーモジュール１の絶縁耐圧が向上する。本実施の形態のパワーモジュール１の製造方法によれば、向上された信頼性を有するパワーモジュール１を得ることができる。 Therefore, even when air bubbles are caught in the first insulating resin portion 33 when the first insulating resin portion 33 is provided between the first main surface 4a of the insulating substrate 4 and the base plate 30, the air bubbles remain in the first insulating resin portion 33. It escapes into the gap between the resin part 33 and the first main surface 4a. Residual air bubbles in the first insulating resin portion 33 are suppressed. Further, the contact area between the insulating circuit board 3 and the first insulating resin portion 33 is reduced. During the operation of the power module 1, the stress applied to the first insulating resin part 33 due to the difference in thermal expansion coefficient between the insulating circuit board 3 and the first insulating resin part 33 decreases. Cracks are prevented from occurring in the first insulating resin portion 33 due to the difference in thermal expansion coefficient between the insulating circuit board 3 and the first insulating resin portion 33. Further, at least a part of the first corner portion 17 where the electric lines of force 50 are concentrated when the power module 1 operates is covered with the first insulating resin portion 33. The withstand voltage of the power module 1 is improved. According to the method of manufacturing power module 1 of the present embodiment, power module 1 having improved reliability can be obtained.
　本実施の形態のパワーモジュール１の製造方法では、第２側面５ｃに１つ以上の第１の溝６が形成されている。１つ以上の第１の溝６は、第３主面５ａから第４主面５ｂに向かって延在している。第１絶縁樹脂部３３を設けること（Ｓ４）は、１つ以上の第１の溝６のベース板３０の側の部分内に第１絶縁樹脂材料を供給すること（Ｓ４２）と、１つ以上の第１の溝６における毛細管現象によって、第１絶縁樹脂材料を１つ以上の第１の溝６を通して第１角部１７の少なくとも一部に供給すること（Ｓ４３）とを含む。本実施の形態のパワーモジュール１の製造方法によれば、１つ以上の第１の溝６における毛細管現象を利用して、第１絶縁樹脂部３３が、第１角部１７の少なくとも一部を覆いながら、第１主面４ａの第２領域４ｒを第１絶縁樹脂部３３から露出させることができるとともに、第１絶縁樹脂部３３の表面３３ｓを、ベース板３０の側から第１主面４ａの側に向かうにつれて第１主面４ａに対する傾きが次第に大きくなる傾斜面とすることができる。 In the method for manufacturing the power module 1 according to the present embodiment, one or more first grooves 6 are formed on the second side surface 5c. One or more first grooves 6 extend from the third main surface 5a toward the fourth main surface 5b. Providing the first insulating resin portion 33 (S4) includes supplying the first insulating resin material into a portion of the one or more first grooves 6 on the base plate 30 side (S42), Supplying the first insulating resin material to at least a part of the first corner portion 17 through the one or more first grooves 6 by the capillary action in the first groove 6 (S43). According to the method of manufacturing power module 1 of the present embodiment, first insulating resin portion 33 forms at least a part of first corner portion 17 by utilizing the capillary phenomenon in one or more first grooves 6. While covering, the second region 4r of the first main surface 4a can be exposed from the first insulating resin portion 33, and the surface 33s of the first insulating resin portion 33 is moved from the base plate 30 side to the first main surface 4a. , The slope with respect to the first main surface 4a gradually increases.
　本実施の形態のパワーモジュール１の製造方法では、１つ以上の第１の溝６は、複数の第１の溝６である。第３主面５ａの全周にわたって、複数の第１の溝６が形成されている。そのため、第１角部１７のより広い範囲が、第１絶縁樹脂部３３によって覆われている。パワーモジュール１の絶縁耐圧が向上する。本実施の形態のパワーモジュール１の製造方法によれば、向上された信頼性を有するパワーモジュール１を得ることができる。 In the method for manufacturing the power module 1 according to the present embodiment, one or more first grooves 6 are a plurality of first grooves 6. A plurality of first grooves 6 are formed over the entire circumference of the third main surface 5a. Therefore, a wider range of the first corner portion 17 is covered by the first insulating resin portion 33. The withstand voltage of the power module 1 is improved. According to the method of manufacturing power module 1 of the present embodiment, power module 1 having improved reliability can be obtained.
　本実施の形態のパワーモジュール１の製造方法では、第３主面５ａに、１つ以上の第１の溝６と連通する第２の溝７が形成されている。第２の溝７は、第３主面５ａの周縁部の少なくとも一部に沿って延在している。第１絶縁樹脂部３３を設けることは、第１の溝６から第２の溝７に供給された第１絶縁樹脂材料を、第２の溝７における毛細管現象によって、第２の溝７内に拡げること（Ｓ４４）をさらに含む。そのため、第１角部１７のより広い範囲が、第１絶縁樹脂部３３によって容易に覆われる。パワーモジュール１の絶縁耐圧が向上する。本実施の形態のパワーモジュール１の製造方法によれば、向上された信頼性を有するパワーモジュール１を得ることができる。 で は In the method of manufacturing power module 1 of the present embodiment, second groove 7 communicating with one or more first grooves 6 is formed in third main surface 5a. The second groove 7 extends along at least a part of the peripheral portion of the third main surface 5a. Providing the first insulating resin portion 33 is that the first insulating resin material supplied from the first groove 6 to the second groove 7 is transferred into the second groove 7 by a capillary phenomenon in the second groove 7. Expanding (S44) is further included. Therefore, a wider range of the first corner portion 17 is easily covered by the first insulating resin portion 33. The withstand voltage of the power module 1 is improved. According to the method of manufacturing power module 1 of the present embodiment, power module 1 having improved reliability can be obtained.
　本実施の形態のパワーモジュール１の製造方法では、第２主面４ｂの平面視において、第１絶縁樹脂部３３は、絶縁基板４の外側に延在している。そのため、パワーモジュール１における部分放電の経路５２を長くすることができ、パワーモジュール１が絶縁破壊に至るまでのパワーモジュール１の寿命を長くすることができる。パワーモジュール１の信頼性が向上する。 In the method of manufacturing the power module 1 according to the present embodiment, the first insulating resin portion 33 extends outside the insulating substrate 4 in a plan view of the second main surface 4b. Therefore, the path 52 of the partial discharge in the power module 1 can be lengthened, and the life of the power module 1 until the power module 1 reaches dielectric breakdown can be lengthened. The reliability of the power module 1 is improved.
　実施の形態２．
　図１３から図１５を参照して、実施の形態２のパワーモジュール１ｂを説明する。本実施の形態のパワーモジュール１ｂは、実施の形態１のパワーモジュール１と同様の構成に加えて、第２絶縁樹脂部４２をさらに備える。 Embodiment 2 FIG.
The power module 1b according to the second embodiment will be described with reference to FIGS. The power module 1b of the present embodiment further includes a second insulating resin part 42 in addition to the same configuration as the power module 1 of the first embodiment.
　図１３及び図１４に示されるように、第２絶縁樹脂部４２は、第３側面８ｃと第２主面４ｂとによって形成される第３角部１８の少なくとも一部を覆っている。第３角部１８の少なくとも一部は第２絶縁樹脂部４２で覆われているため、第３側面８ｃの少なくとも一部と第２主面４ｂの一部とは、第２絶縁樹脂部４２で覆われている。特定的には、第３角部１８の全ては、第２絶縁樹脂部４２で覆われている。図１５に示されるように、パワーモジュール１ｂの動作時に電気力線５０が集中する第３角部１８の少なくとも一部は、第２絶縁樹脂部４２によって覆われている。パワーモジュール１ｂの絶縁耐圧が向上する。パワーモジュール１ｂの信頼性が向上する。 As shown in FIGS. 13 and 14, the second insulating resin portion 42 covers at least a part of the third corner portion 18 formed by the third side surface 8c and the second main surface 4b. Since at least a portion of the third corner portion 18 is covered with the second insulating resin portion 42, at least a portion of the third side surface 8c and a portion of the second main surface 4b are joined by the second insulating resin portion 42. Covered. Specifically, the entire third corner 18 is covered with the second insulating resin part 42. As shown in FIG. 15, at least a part of the third corner portion 18 where the electric lines of force 50 are concentrated when the power module 1 b operates is covered with the second insulating resin portion 42. The withstand voltage of the power module 1b is improved. The reliability of the power module 1b is improved.
　特定的には、第２絶縁樹脂部４２は、第２金属層８から露出している第２主面４ｂの第２周縁部４ｓを覆っている。第２絶縁樹脂部４２は、第３角部１８から、第１側面４ｃと第２主面４ｂとによって形成される第４角部４ｅまで延在している。第２絶縁樹脂部４２は、第３側面８ｃと第６主面８ｂとによって形成される第５角部８ｄをさらに覆っている。第２絶縁樹脂部４２は、第６主面８ｂの周縁部８ｅの一部をさらに覆っている。具体的には、第２絶縁樹脂部４２は、第５角部８ｄから幅ｗ3にわたって、第６主面８ｂの周縁部８ｅを覆っている。幅ｗ3は、例えば、最大で１．０ｍｍ以下である。幅ｗ3は、例えば、最大で０．７ｍｍ以下であってもよい。幅ｗ3は、例えば、少なくとも０．１ｍｍ以上である。幅ｗ3は、例えば、少なくとも０．２ｍｍ以上であってもよい。 Specifically, the second insulating resin portion 42 covers the second peripheral portion 4s of the second main surface 4b exposed from the second metal layer 8. The second insulating resin portion 42 extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b. The second insulating resin portion 42 further covers a fifth corner 8d formed by the third side surface 8c and the sixth main surface 8b. The second insulating resin portion 42 further covers a part of the peripheral portion 8e of the sixth main surface 8b. Specifically, the second insulating resin portion 42, across the width w 3 from the fifth corner 8d, and covers the peripheral edge portion 8e of the sixth main surface 8b. Width w 3 is, for example, 1.0mm or less at the maximum. Width w 3, for example, it may be 0.7mm or less at the maximum. Width w 3 is, for example, at least 0.1mm or more. Width w 3, for example, it may be at least 0.2mm or more.
　第２絶縁樹脂部４２は、封止部材４０と異なる材料で形成されている。第２絶縁樹脂部４２は、例えば、シリコーンゴムまたはポリイミド樹脂で形成されている。第２絶縁樹脂部４２は、封止部材４０よりも低い誘電率を有してもよい。そのため、第３角部１８における電界強度が減少し、第３角部１８において部分放電が発生することが抑制される。第２絶縁樹脂部４２は、第１絶縁樹脂部３３と同じ材料で形成されてもよいし、第１絶縁樹脂部３３と異なる材料で形成されてもよい。 The second insulating resin portion 42 is formed of a material different from that of the sealing member 40. The second insulating resin part 42 is formed of, for example, silicone rubber or polyimide resin. The second insulating resin part 42 may have a lower dielectric constant than the sealing member 40. Therefore, the electric field intensity at the third corner 18 decreases, and the occurrence of partial discharge at the third corner 18 is suppressed. The second insulating resin portion 42 may be formed of the same material as the first insulating resin portion 33, or may be formed of a material different from the first insulating resin portion 33.
　第２絶縁樹脂部４２は、封止部材４０よりも絶縁基板４に対する密着性が高い。そのため、第３角部１８において部分放電が発生することが抑制される。また、第２絶縁樹脂部４２は、第３角部１８から、第１側面４ｃと第２主面４ｂとによって形成される第４角部４ｅまで延在しているため、仮に、第３角部１８において部分放電が発生しても、第２主面４ｂに沿う部分放電の進展速度を低下させることができる。パワーモジュール１ｂが絶縁破壊に至るまでのパワーモジュール１ｂの寿命を長くすることができる。パワーモジュール１ｂの信頼性が向上する。 密 着 The second insulating resin portion 42 has higher adhesion to the insulating substrate 4 than the sealing member 40. Therefore, occurrence of partial discharge in the third corner portion 18 is suppressed. Further, since the second insulating resin portion 42 extends from the third corner portion 18 to the fourth corner portion 4e formed by the first side surface 4c and the second main surface 4b, the third corner portion is temporarily provided. Even if a partial discharge occurs in portion 18, the rate of progress of the partial discharge along second main surface 4b can be reduced. It is possible to extend the life of the power module 1b until the power module 1b breaks down. The reliability of the power module 1b is improved.
　図１２及び図１６を参照して、実施の形態２のパワーモジュール１ｂの製造方法を説明する。本実施の形態のパワーモジュール１ｂの製造方法は、実施の形態１のパワーモジュール１の製造方法と同様の工程に加えて、第２絶縁樹脂部４２を設けること（Ｓ５）をさらに備える。第２絶縁樹脂部４２は、第３角部１８の少なくとも一部を覆っている。特定的には、第２絶縁樹脂部４２は、第３角部１８の全てを覆っている。第２絶縁樹脂部４２は、第２金属層８から露出している第２主面４ｂの第２周縁部４ｓを覆っている。第２絶縁樹脂部４２は、第３角部１８から、第１側面４ｃと第２主面４ｂとによって形成される第４角部４ｅまで延在している。 A method of manufacturing the power module 1b according to the second embodiment will be described with reference to FIGS. The method for manufacturing the power module 1b of the present embodiment further includes providing the second insulating resin portion 42 (S5) in addition to the same steps as those of the method of manufacturing the power module 1 of the first embodiment. The second insulating resin part 42 covers at least a part of the third corner 18. Specifically, the second insulating resin portion 42 covers the entire third corner 18. The second insulating resin portion 42 covers the second peripheral portion 4s of the second main surface 4b exposed from the second metal layer 8. The second insulating resin portion 42 extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b.
　特定的には、第２絶縁樹脂材料が供給される（Ｓ５１）。具体的には、第２絶縁樹脂材料は、第３角部１８の少なくとも一部上に塗布される。第２絶縁樹脂材料は、第３角部１８の少なくとも一部を覆っている。第２絶縁樹脂材料は、第２金属層８から露出している第２主面４ｂの第２周縁部４ｓをさらに覆っている。第２絶縁樹脂材料は、第３角部１８から、第１側面４ｃと第２主面４ｂとによって形成される第４角部４ｅまで延在している。第２絶縁樹脂材料は、第３側面８ｃと第６主面８ｂとによって形成される第５角部８ｄをさらに覆っている。第２絶縁樹脂材料は、第６主面８ｂの周縁部８ｅの一部をさらに覆っている。 Specifically, the second insulating resin material is supplied (S51). Specifically, the second insulating resin material is applied on at least a part of the third corner 18. The second insulating resin material covers at least a part of the third corner 18. The second insulating resin material further covers the second peripheral portion 4s of the second main surface 4b exposed from the second metal layer 8. The second insulating resin material extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b. The second insulating resin material further covers a fifth corner 8d formed by the third side surface 8c and the sixth main surface 8b. The second insulating resin material further covers a part of the peripheral portion 8e of the sixth main surface 8b.
　それから、第２絶縁樹脂材料に脱泡処理を施す（Ｓ５２）。具体的には、減圧雰囲気中に第２絶縁樹脂材料を保持して、第２絶縁樹脂材料は脱泡される。それから、第２絶縁樹脂材料を硬化させる（Ｓ５３）。こうして、第２絶縁樹脂部４２が形成される。第２絶縁樹脂材料に脱泡処理を施す（Ｓ５２）ことは、第１絶縁樹脂材料に脱泡処理を施す（Ｓ４５）ことと一括して行われてもよい。第２絶縁樹脂材料を硬化させる（Ｓ５３）ことは、第１絶縁樹脂材料を硬化させる（Ｓ４６）ことと一括して行われてもよい。半導体素子２０に電気配線を施すこと（Ｓ６）は、第１絶縁樹脂部３３を設けること（Ｓ４）及び第２絶縁樹脂部４２を設けること（Ｓ５）の前に行われてもよい。 (4) Then, a defoaming process is performed on the second insulating resin material (S52). Specifically, the second insulating resin material is held in a reduced-pressure atmosphere, and the second insulating resin material is defoamed. Then, the second insulating resin material is cured (S53). Thus, the second insulating resin portion 42 is formed. Defoaming the second insulating resin material (S52) may be performed together with defoaming the first insulating resin material (S45). Curing the second insulating resin material (S53) may be performed together with curing the first insulating resin material (S46). The application of the electrical wiring to the semiconductor element 20 (S6) may be performed before providing the first insulating resin part 33 (S4) and providing the second insulating resin part 42 (S5).
　本実施の形態のパワーモジュール１ｂ及びその製造方法は、実施の形態１のパワーモジュール１及びその製造方法の効果に加えて、以下の効果を奏する。 パ ワ ー The power module 1b of the present embodiment and the method of manufacturing the same have the following effects in addition to the effects of the power module 1 of the first embodiment and the method of manufacturing the same.
　本実施の形態のパワーモジュール１ｂは、第２絶縁樹脂部４２をさらに備える。第２絶縁樹脂部４２は、第３側面８ｃと第２主面４ｂとによって形成される第３角部１８の少なくとも一部を覆っている。パワーモジュール１ｂの動作時に電気力線５０が集中する第３角部１８の少なくとも一部は第３絶縁樹脂部によって覆われているため、パワーモジュール１ｂの絶縁耐圧が向上する。パワーモジュール１ｂの信頼性が向上する。 パ ワ ー The power module 1b according to the present embodiment further includes a second insulating resin portion 42. The second insulating resin portion 42 covers at least a part of the third corner 18 formed by the third side surface 8c and the second main surface 4b. At least a part of the third corner portion 18 where the electric lines of force 50 are concentrated during operation of the power module 1b is covered with the third insulating resin portion, so that the withstand voltage of the power module 1b is improved. The reliability of the power module 1b is improved.
　本実施の形態のパワーモジュール１ｂの製造方法は、第２絶縁樹脂部４２を設けること（Ｓ５）をさらに備える。第２絶縁樹脂部４２は、第３側面８ｃと第２主面４ｂとによって形成される第３角部１８の少なくとも一部を覆っている。パワーモジュール１ｂの動作時に電気力線５０が集中する第３角部１８の少なくとも一部は第３絶縁樹脂部によって覆われているため、パワーモジュール１ｂの絶縁耐圧が向上する。本実施の形態のパワーモジュール１ｂの製造方法によれば、向上された信頼性を有するパワーモジュール１ｂを得ることができる。 製造 The method for manufacturing the power module 1b according to the present embodiment further includes providing the second insulating resin portion 42 (S5). The second insulating resin portion 42 covers at least a part of the third corner 18 formed by the third side surface 8c and the second main surface 4b. At least a part of the third corner portion 18 where the electric lines of force 50 are concentrated during operation of the power module 1b is covered with the third insulating resin portion, so that the withstand voltage of the power module 1b is improved. According to the method of manufacturing power module 1b of the present embodiment, power module 1b having improved reliability can be obtained.
　本実施の形態のパワーモジュール１ｂ及びその製造方法では、第２絶縁樹脂部４２は、第２金属層８から露出している第２主面４ｂの第２周縁部４ｓを覆っている。第２絶縁樹脂部４２は、第３角部１８から、第１側面４ｃと第２主面４ｂとによって形成される第４角部４ｅまで延在している。そのため、第２絶縁樹脂部４２は、第２主面４ｂに沿う部分放電の進展速度を低下させることができる。パワーモジュール１ｂが絶縁破壊に至るまでのパワーモジュール１ｂの寿命を長くすることができる。パワーモジュール１ｂの信頼性が向上する。 In the power module 1 b and the method of manufacturing the same according to the present embodiment, the second insulating resin portion 42 covers the second peripheral portion 4 s of the second main surface 4 b exposed from the second metal layer 8. The second insulating resin portion 42 extends from the third corner 18 to a fourth corner 4e formed by the first side surface 4c and the second main surface 4b. Therefore, the second insulating resin portion 42 can reduce the rate of progress of the partial discharge along the second main surface 4b. It is possible to extend the life of the power module 1b until the power module 1b breaks down. The reliability of the power module 1b is improved.
　今回開示された実施の形態１及び実施の形態２はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した説明ではなく請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることを意図される。 実 施 Embodiments 1 and 2 disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　１，１ｂ　パワーモジュール、３　絶縁回路基板、４　絶縁基板、４ａ　第１主面、４ｂ　第２主面、４ｃ　第１側面、４ｄ　第２角部、４ｅ　第４角部、４ｐ　第１周縁部、４ｑ　第１領域、４ｒ　第２領域、４ｓ　第２周縁部、５　第１金属層、５ａ　第３主面、５ｂ　第４主面、５ｃ　第２側面、６　第１の溝、７　第２の溝、８　第２金属層、８ａ　第５主面、８ｂ　第６主面、８ｃ　第３側面、８ｄ　第５角部、８ｅ　周縁部、９　第１金属層部分、１０　第２金属層部分、１７　第１角部、１８　第３角部、２０　半導体素子、２１　第１導電接合部材、２３　導電ワイヤ、２５　第１リード端子、２６　第２リード端子、２７　第２導電接合部材、２８　第３導電接合部材、３０　ベース板、３１　接合部材、３２　ソルダーレジスト層、３３　第１絶縁樹脂部、３３ｅ　部分、３３ｓ　表面、３７　外囲体、３８　接着剤、３９　蓋部、４０　封止部材、４２　第２絶縁樹脂部、５０　電気力線、５２　部分放電の経路。 1, 1b power module, 3 insulating circuit board, 4 insulating board, 4a first main surface, 4b second main surface, 4c first side surface, 4d second corner portion, 4e fourth corner portion, 4p first peripheral portion, 4q {first region, 4r} second region, 4s} second peripheral portion, 5} first metal layer, 5a {third main surface, 5b} fourth main surface, 5c} second side surface, 6} first groove, 7} second groove , 8 second metal layer, 8a fifth principal surface, 8b sixth principal surface, 8c third side surface, 8d fifth corner, 8e peripheral edge, 9 first metal layer portion, 10 second metal layer portion, 17 th 1 corner, 18 third corner, 20 semiconductor element, 21 first conductive bonding member, 23 conductive wire, 25 first lead terminal, 26 second lead terminal, 27 second conductive bonding member, 28 third conductive bonding member , 30 base plate, 31 joining member, 32 solder Resist layer, 33 {first insulating resin portion, 33e} portion, 33s surface, 37 enclosure, 38 adhesive, 39 lid, 40 sealing member, 42 second insulating resin portion, 50 electric lines of force, 52 partial discharge Route.

Claims (17)

  1. 　ベース板と、
    　前記ベース板上に設けられている絶縁回路基板とを備え、前記絶縁回路基板は、絶縁基板と、第１金属層と、第２金属層とを含み、前記絶縁基板は、前記ベース板に面する第１主面と、前記第１主面とは反対側の第２主面と、前記第１主面と前記第２主面とを接続する第１側面とを含み、前記第１金属層は前記第１主面上に設けられており、前記第２金属層は前記第２主面上に設けられており、さらに、
    　前記第２金属層に接合されている半導体素子と、
    　前記ベース板と前記第１主面との間に設けられている第１絶縁樹脂部とを備え、
    　前記第１金属層は、前記絶縁基板に面する第３主面と、前記ベース板に面する第４主面と、前記第３主面と前記第４主面とを接続する第２側面とを含み、
    　前記第２側面と前記第１主面とによって形成される第１角部の少なくとも一部は前記第１絶縁樹脂部で覆われており、
    　前記第１金属層から露出している前記第１主面の第１周縁部は、前記第１角部に近位の第１領域と、前記第１領域に隣接しかつ前記第１角部から遠位の第２領域とを含み、
    　前記第１領域は前記第１絶縁樹脂部で覆われており、前記第２領域は、前記第１絶縁樹脂部から露出しており、
    　前記第１金属層とは反対側の前記第１絶縁樹脂部の表面は、前記ベース板の側から前記第１主面の側に向かうにつれて前記第１主面に対する傾きが次第に大きくなる傾斜面である、パワーモジュール。     A base plate,
    An insulating circuit board provided on the base plate, wherein the insulating circuit board includes an insulating substrate, a first metal layer, and a second metal layer, and the insulating substrate has a surface facing the base plate. A first main surface, a second main surface opposite to the first main surface, and a first side surface connecting the first main surface and the second main surface. Is provided on the first main surface, the second metal layer is provided on the second main surface,
    A semiconductor element bonded to the second metal layer;
    A first insulating resin portion provided between the base plate and the first main surface;
    The first metal layer includes a third main surface facing the insulating substrate, a fourth main surface facing the base plate, and a second side surface connecting the third main surface and the fourth main surface. Including
    At least a portion of a first corner formed by the second side surface and the first main surface is covered with the first insulating resin portion,
    A first peripheral portion of the first main surface exposed from the first metal layer has a first region proximate to the first corner and a first region adjacent to the first region and from the first corner. A distal second region;
    The first region is covered with the first insulating resin portion, the second region is exposed from the first insulating resin portion,
    The surface of the first insulating resin portion opposite to the first metal layer is an inclined surface whose inclination with respect to the first main surface gradually increases from the base plate side toward the first main surface side. There is a power module.
  2. 　前記第２側面に１つ以上の第１の溝が形成されており、
    　前記１つ以上の第１の溝は、前記第３主面から前記第４主面に向かって延在しており、
    　前記第１絶縁樹脂部は前記１つ以上の第１の溝内に設けられている、請求項１に記載のパワーモジュール。     One or more first grooves are formed in the second side surface;
    The one or more first grooves extend from the third main surface toward the fourth main surface;
    The power module according to claim 1, wherein the first insulating resin portion is provided in the one or more first grooves.
  3. 　前記１つ以上の第１の溝は、０．１ｍｍ以下の第１の幅と０．１ｍｍ以下の第１の深さとを有する、請求項２に記載のパワーモジュール。 The power module according to claim 2, wherein the one or more first grooves have a first width of 0.1 mm or less and a first depth of 0.1 mm or less.
  4. 　前記１つ以上の第１の溝は、複数の前記第１の溝であり、
    　前記第３主面の全周にわたって、前記複数の第１の溝が形成されている、請求項２または請求項３に記載のパワーモジュール。     The one or more first grooves are a plurality of the first grooves;
    4. The power module according to claim 2, wherein the plurality of first grooves are formed over the entire circumference of the third main surface. 5.
  5. 　前記第３主面に、前記１つ以上の第１の溝と連通する第２の溝が形成されており、
    　前記第２の溝は、前記第３主面の周縁部の少なくとも一部に沿って延在しており、
    　前記第１絶縁樹脂部は前記第２の溝内にも設けられている、請求項２から請求項４のいずれか１項に記載のパワーモジュール。     A second groove communicating with the one or more first grooves is formed on the third main surface;
    The second groove extends along at least a part of a peripheral portion of the third main surface,
    The power module according to any one of claims 2 to 4, wherein the first insulating resin portion is provided also in the second groove.
  6. 　前記第２の溝は、０．１ｍｍ以上０．５ｍｍ以下の第２の幅と０．１ｍｍ以上０．５ｍｍ以下の第２の深さとを有する、請求項５に記載のパワーモジュール。 The power module according to claim 5, wherein the second groove has a second width of 0.1 mm or more and 0.5 mm or less and a second depth of 0.1 mm or more and 0.5 mm or less.
  7. 　前記第２主面の平面視において、前記第１絶縁樹脂部は、前記絶縁基板の外側に延在している、請求項１から請求項６のいずれか１項に記載のパワーモジュール。 The power module according to any one of claims 1 to 6, wherein in a plan view of the second main surface, the first insulating resin portion extends outside the insulating substrate.
  8. 　前記第２金属層は、前記絶縁基板に面する第５主面と、前記第５主面とは反対側の第６主面と、前記第５主面と前記第６主面とを接続する第３側面とを含み、
    　前記絶縁基板の前記第１側面と前記第１金属層の前記第２側面との間の第１間隔は、前記絶縁基板の前記第１側面と前記第２金属層の前記第３側面との間の第２間隔に実質的に等しい、請求項１から請求項７のいずれか１項に記載のパワーモジュール。     The second metal layer connects a fifth main surface facing the insulating substrate, a sixth main surface opposite to the fifth main surface, and connects the fifth main surface and the sixth main surface. Including a third aspect,
    A first distance between the first side surface of the insulating substrate and the second side surface of the first metal layer is a distance between the first side surface of the insulating substrate and the third side surface of the second metal layer. The power module according to any one of claims 1 to 7, wherein the second interval is substantially equal to the second interval.
  9. 　第２絶縁樹脂部をさらに備え、
    　前記第２金属層は、前記絶縁基板に面する第５主面と、前記第５主面とは反対側の第６主面と、前記第５主面と前記第６主面とを接続する第３側面とを含み、
    　前記第２絶縁樹脂部は、前記第３側面と前記第２主面とによって形成される第３角部の少なくとも一部を覆っている、請求項１から請求項７のいずれか１項に記載のパワーモジュール。     A second insulating resin portion,
    The second metal layer connects a fifth main surface facing the insulating substrate, a sixth main surface opposite to the fifth main surface, and connects the fifth main surface and the sixth main surface. Including a third aspect,
    The second insulating resin portion according to any one of claims 1 to 7, wherein the second insulating resin portion covers at least a part of a third corner formed by the third side surface and the second main surface. Power module.
  10. 　前記第２絶縁樹脂部は、前記第２金属層から露出している前記第２主面の第２周縁部を覆っており、前記第２絶縁樹脂部は、前記第３角部から、前記第１側面と前記第２主面とによって形成される第４角部まで延在している、請求項９に記載のパワーモジュール。 The second insulating resin portion covers a second peripheral portion of the second main surface exposed from the second metal layer. The power module according to claim 9, wherein the power module extends to a fourth corner formed by one side surface and the second main surface.
  11. 　ベース板上に絶縁回路基板を設けることを備え、前記絶縁回路基板は、絶縁基板と、第１金属層と、第２金属層とを含み、前記絶縁基板は、前記ベース板に面する第１主面と、前記第１主面とは反対側の第２主面と、前記第１主面と前記第２主面とを接続する第１側面とを含み、前記第１金属層は前記第１主面上に設けられており、前記第２金属層は前記第２主面上に設けられており、
    　前記第２金属層に半導体素子を接合することと、
    　前記ベース板と前記第１主面との間に第１絶縁樹脂部を設けることとを備え、
    　前記第１金属層は、前記絶縁基板に面する第３主面と、前記ベース板に面する第４主面と、前記第３主面と前記第４主面とを接続する第２側面とを含み、
    　前記第２側面と前記第１主面とによって形成される第１角部の少なくとも一部は前記第１絶縁樹脂部で覆われており、
    　前記第１金属層から露出している前記第１主面の第１周縁部は、前記第１角部に近位の第１領域と、前記第１領域に隣接しかつ前記第１角部から遠位の第２領域とを含み、
    　前記第１領域は前記第１絶縁樹脂部で覆われており、前記第２領域は、前記第１絶縁樹脂部から露出しており、
    　前記第１金属層とは反対側の前記第１絶縁樹脂部の表面は、前記ベース板の側から前記第１主面の側に向かうにつれて前記第１主面に対する傾きが次第に大きくなる傾斜面である、パワーモジュールの製造方法。     Providing an insulated circuit board on a base plate, the insulated circuit board including an insulated board, a first metal layer, and a second metal layer, wherein the insulated board is a first metal substrate facing the base plate. A main surface, a second main surface opposite to the first main surface, and a first side surface connecting the first main surface and the second main surface, wherein the first metal layer is A first main surface, the second metal layer is provided on the second main surface,
    Bonding a semiconductor element to the second metal layer;
    Providing a first insulating resin portion between the base plate and the first main surface,
    The first metal layer includes a third main surface facing the insulating substrate, a fourth main surface facing the base plate, and a second side surface connecting the third main surface and the fourth main surface. Including
    At least a portion of a first corner formed by the second side surface and the first main surface is covered with the first insulating resin portion,
    A first peripheral portion of the first main surface exposed from the first metal layer has a first region proximate to the first corner and a first region adjacent to the first region and from the first corner. A distal second region;
    The first region is covered with the first insulating resin portion, the second region is exposed from the first insulating resin portion,
    The surface of the first insulating resin portion opposite to the first metal layer is an inclined surface whose inclination with respect to the first main surface gradually increases from the base plate side toward the first main surface side. A method for manufacturing a power module.
  12. 　前記第２側面に１つ以上の第１の溝が形成されており、
    　前記１つ以上の第１の溝は、前記第３主面から前記第４主面に向かって延在しており、
    　前記第１絶縁樹脂部を設けることは、前記１つ以上の第１の溝の前記ベース板の側の部分内に第１絶縁樹脂材料を供給することと、前記１つ以上の第１の溝における毛細管現象によって、前記第１絶縁樹脂材料を前記１つ以上の第１の溝を通して前記第１角部の前記少なくとも一部に供給することとを含む、請求項１１に記載のパワーモジュールの製造方法。     One or more first grooves are formed in the second side surface;
    The one or more first grooves extend from the third main surface toward the fourth main surface;
    Providing the first insulating resin portion includes supplying a first insulating resin material into a portion of the one or more first grooves on the side of the base plate, and providing the one or more first grooves. Supplying the first insulating resin material to the at least a portion of the first corner portion through the one or more first grooves by a capillary action in the manufacturing of the power module according to claim 11. Method.
  13. 　前記１つ以上の第１の溝は、複数の前記第１の溝であり、
    　前記第３主面の全周にわたって、前記複数の第１の溝が形成されている、請求項１２に記載のパワーモジュールの製造方法。     The one or more first grooves are a plurality of the first grooves;
    The method for manufacturing a power module according to claim 12, wherein the plurality of first grooves are formed over the entire circumference of the third main surface.
  14. 　前記第３主面に、前記１つ以上の第１の溝と連通する第２の溝が形成されており、
    　前記第２の溝は、前記第３主面の周縁部の少なくとも一部に沿って延在しており、
    　前記第１絶縁樹脂部を設けることは、前記第１の溝から前記第２の溝に供給された前記第１絶縁樹脂材料を、前記第２の溝における毛細管現象によって、前記第２の溝内に拡げることをさらに含む、請求項１２または請求項１３に記載のパワーモジュールの製造方法。     A second groove communicating with the one or more first grooves is formed on the third main surface;
    The second groove extends along at least a part of a peripheral portion of the third main surface,
    Providing the first insulating resin portion includes causing the first insulating resin material supplied from the first groove to the second groove to move the first insulating resin material into the second groove by a capillary phenomenon in the second groove. 14. The method for manufacturing a power module according to claim 12, further comprising expanding the power module.
  15. 　前記第２主面の平面視において、前記第１絶縁樹脂部は、前記絶縁基板の外側に延在している、請求項１１から請求項１４のいずれか１項に記載のパワーモジュールの製造方法。 The method for manufacturing a power module according to any one of claims 11 to 14, wherein the first insulating resin portion extends outside the insulating substrate in plan view of the second main surface. .
  16. 　第２絶縁樹脂部を設けることをさらに備え、
    　前記第２金属層は、前記絶縁基板に面する第５主面と、前記第５主面とは反対側の第６主面と、前記第５主面と前記第６主面とを接続する第３側面とを含み、
    　前記第２絶縁樹脂部は、前記第３側面と前記第２主面とによって形成される第３角部の少なくとも一部を覆っている、請求項１１から請求項１５のいずれか１項に記載のパワーモジュールの製造方法。     Further comprising providing a second insulating resin portion,
    The second metal layer connects a fifth main surface facing the insulating substrate, a sixth main surface opposite to the fifth main surface, and connects the fifth main surface and the sixth main surface. Including a third aspect,
    16. The second insulating resin portion according to claim 11, wherein the second insulating resin portion covers at least a part of a third corner formed by the third side surface and the second main surface. Method of manufacturing power module.
  17. 　前記第２絶縁樹脂部は、前記第２金属層から露出している前記第２主面の第２周縁部を覆っており、前記第２絶縁樹脂部は、前記第３角部から、前記第１側面と前記第２主面とによって形成される第４角部まで延在している、請求項１６に記載のパワーモジュールの製造方法。 The second insulating resin portion covers a second peripheral portion of the second main surface exposed from the second metal layer. The method of manufacturing a power module according to claim 16, wherein the power module extends to a fourth corner formed by one side surface and the second main surface.
PCT/JP2018/026878 2018-07-18 2018-07-18 Power module and method of manufacturing same WO2020016958A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/026878 WO2020016958A1 (en) 2018-07-18 2018-07-18 Power module and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/026878 WO2020016958A1 (en) 2018-07-18 2018-07-18 Power module and method of manufacturing same

Publications (1)

Publication Number Publication Date
WO2020016958A1 true WO2020016958A1 (en) 2020-01-23

Family

ID=69164795

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/026878 WO2020016958A1 (en) 2018-07-18 2018-07-18 Power module and method of manufacturing same

Country Status (1)

Country Link
WO (1) WO2020016958A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076190A (en) * 2000-08-24 2002-03-15 Toshiba Corp Circuit board, semiconductor device and their manufacturing method
JP2006522468A (en) * 2003-04-02 2006-09-28 アーベーベー・リサーチ・リミテッド Insulated power semiconductor module in which partial discharge behavior is suppressed to a low level and manufacturing method thereof
JP2013183038A (en) * 2012-03-02 2013-09-12 Mitsubishi Electric Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076190A (en) * 2000-08-24 2002-03-15 Toshiba Corp Circuit board, semiconductor device and their manufacturing method
JP2006522468A (en) * 2003-04-02 2006-09-28 アーベーベー・リサーチ・リミテッド Insulated power semiconductor module in which partial discharge behavior is suppressed to a low level and manufacturing method thereof
JP2013183038A (en) * 2012-03-02 2013-09-12 Mitsubishi Electric Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JP3868777B2 (en) Semiconductor device
US10104775B2 (en) Semiconductor device and method for manufacturing the same
JP6398270B2 (en) Semiconductor device
JP6848802B2 (en) Semiconductor device
JPWO2015178296A1 (en) Power semiconductor device
JP2016018866A (en) Power module
US10959333B2 (en) Semiconductor device
JP2007012831A (en) Power semiconductor device
US11699625B2 (en) Power semiconductor module arrangement
JPWO2017082122A1 (en) Power module
JP3440824B2 (en) Semiconductor device
US20220051960A1 (en) Power Semiconductor Module Arrangement and Method for Producing the Same
JP6150718B2 (en) Semiconductor device and manufacturing method thereof
CN113206048A (en) Semiconductor device and method for manufacturing the same
JP7170614B2 (en) semiconductor equipment
WO2020016958A1 (en) Power module and method of manufacturing same
JP7308791B2 (en) power semiconductor equipment
JP5826443B1 (en) Semiconductor device and manufacturing method thereof
US11282774B2 (en) Power semiconductor module arrangement
JP2017135144A (en) Semiconductor module
WO2021181468A1 (en) Semiconductor module
JP7419781B2 (en) semiconductor module
JP6891075B2 (en) Power semiconductor module
CN112687640A (en) Heat dissipation plate, method of manufacturing the same, and semiconductor package including the same
JP2018170362A (en) Semiconductor module

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18926815

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18926815

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP