WO2020015418A1 - Diode d'irradiation pour germination de plante et son procédé de préparation, et lampe d'irradiation pour germination de plante - Google Patents

Diode d'irradiation pour germination de plante et son procédé de préparation, et lampe d'irradiation pour germination de plante Download PDF

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WO2020015418A1
WO2020015418A1 PCT/CN2019/084578 CN2019084578W WO2020015418A1 WO 2020015418 A1 WO2020015418 A1 WO 2020015418A1 CN 2019084578 W CN2019084578 W CN 2019084578W WO 2020015418 A1 WO2020015418 A1 WO 2020015418A1
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Prior art keywords
light
irradiation
plant
chip
plant germination
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PCT/CN2019/084578
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English (en)
Chinese (zh)
Inventor
林金填
陈磊
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旭宇光电（深圳）股份有限公司
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Publication of WO2020015418A1 publication Critical patent/WO2020015418A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0091—Processes for devices with an active region comprising only IV-VI compounds
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G7/00—Botany in general
    • A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
    • A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

Definitions

  • the invention relates to the technical field of diodes, in particular to a plant sprout irradiation diode, a preparation method thereof and a plant sprout irradiation lamp.
  • Light environment is one of the important physical environmental factors indispensable for plant growth and development. It is an important technology to control various stages of plant growth and development through light quality regulation.
  • LED (light-emitting diode) plant lights can also provide different "light fertilizers" according to the needs of plants. While promoting the rapid growth of plants, they can achieve high-efficiency, high-quality, increased yield, and pollution-free purposes.
  • One of the objectives of the present invention is to provide a light emitting diode for irradiating plants with germination to improve the current plant germination and growth.
  • the LED lamps are all cold light sources, and there is a certain lack in the far infrared band, which causes the technical problems of slow germination and germination of plants.
  • the plant sprout irradiation diode provided by the present invention includes a substrate, a light emitting chip provided on the substrate, and a lens packaging the light emitting chip.
  • a conductive light emitting layer is provided inside the lens, and the conductive light emitting layer includes graphene oxide.
  • the emission band of the graphene oxide is 3-15 ⁇ m.
  • the thickness of the conductive light emitting layer is 1-50 ⁇ m;
  • the thickness of the conductive light-emitting layer is 5-25 ⁇ m, and more preferably 10-20 ⁇ m.
  • the lens is made of graphene glass, and raw materials of the graphene glass include quartz glass powder and graphene;
  • the mass ratio of the quartz glass powder and the graphene is (10-20): 1, preferably (12-18): 1.
  • the emission band of the light-emitting chip is 245-1000 nm, and preferably 400-750 nm.
  • a fluorescent glue is coated on the light-emitting chip, and the fluorescent glue is a mixture of fluorescent powder and silica gel;
  • the phosphor includes BaMgAl 11 O 17 : Eu, AlN: Eu, Sr 10 (PO 4 ) 6 Cl 2 : Eu, (Sr, Ba) 2 SiO 4 : Eu, BaSi 2 O 2 N 2 : Eu , (Ba, Sr) Si 2 O 2 N 2 : Eu, Y 3 Al 5 O 12 : Ce, (Y, Lu) 3 Al 5 O 12 : Ce, (La, Y) 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, Y 3 (Al, Ga) 5 O 12 : Ce, Lu 3 (Al, Ga) 5 O 12 : Ce, (Y, Lu) 3 (Al, Ga) 5 O 12 : Ce, La 3 (Al, Ga) 5 O 12 : Ce, (Y, Lu) 3 (Al, Ga) 5 O 12 : Ce, La 3 Si 6 N 12 : Ce, La 3 Si 6 N 12 : Ce, La 3 Si 6 N 12 : Ce, La 3 (Al, Si) 6
  • the phosphor includes a red phosphor and a green phosphor
  • the mass ratio of the red phosphor and the green phosphor is (10-15): 1, preferably 11: 1;
  • the red phosphor includes CaAlSiN 3 : Eu;
  • the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn;
  • the mass ratio of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn is (1-2): (1-2), more preferably 1: 1;
  • the green phosphor includes Lu 3 Al 5 O 12 : Ce.
  • the method for preparing graphene oxide includes the following steps:
  • step (a) is performed at a low temperature, and then performed at an elevated temperature to an intermediate temperature;
  • the low temperature is 0-4 ° C, and the intermediate temperature is 25-40 ° C;
  • step (b) is performed at a high temperature
  • the high temperature is 70-100 ° C;
  • the mass ratio of the graphite, the nitrate, the potassium permanganate and the hydrogen peroxide is (1-2): 1: (3-8): (5-15), preferably 2: 1: (5-7): (8-12), more preferably 2: 1: 5: 10.
  • the conductive light emitting layer further includes a first film and a second film, and the graphene oxide is disposed between the first film and the second film;
  • each of the first cover film and the second cover film is a PET film independently;
  • the substrate is a ceramic substrate or a metal substrate, preferably a ceramic substrate.
  • the plant sprout irradiation diode further includes a bracket, a cement and a wire, and the substrate is fixed on the bracket through the cement and is electrically connected to the bracket, and the wire is used to connect the The bracket is electrically connected to the power source.
  • Another object of the present invention is to provide a method for preparing a plant sprout irradiation diode, including the following steps:
  • it further comprises the step (D) of fixing the substrate on the bracket;
  • the method further includes a step (S).
  • the step (S) is disposed between the step (A) and the step (B), and the light-emitting chip is covered with a fluorescent glue.
  • a third object of the present invention is to provide a plant germination irradiation lamp, including at least one plant germination irradiation diode provided by the present invention.
  • the plant germination irradiation diode provided by the invention is provided with a conductive light emitting layer with an emission band of 3-15 ⁇ m on the inner side of the lens, and the emitted spectrum is continuous, covering not only the visible light band but also the far infrared band of 3-15 ⁇ m, which can satisfy the plant
  • the irradiation requirements of various wavelengths of light required for germination can effectively shorten the plant germination cycle and increase the plant germination rate.
  • the method for preparing a plant germination irradiation diode provided by the present invention has simple process and convenient operation, is suitable for large-scale industrial production, and effectively improves production efficiency.
  • the plant sprout irradiation lamp provided by the present invention uses the plant sprout irradiation diode provided by the present invention as a light source, and the emitted spectrum is continuous, covering not only the visible light band but also the far-infrared band of 3-15 ⁇ m, which can meet the needs of plant sprouts.
  • the irradiation requirements of light at various wavelengths can effectively shorten the plant germination cycle and improve the plant germination rate.
  • FIG. 1 is a schematic structural diagram of a plant germination irradiation diode according to Embodiment 1 of the present invention
  • Example 2 is a spectrum diagram of graphene oxide in Example 1 of the present invention.
  • FIG. 3 is a schematic cross-sectional structure diagram of the conductive light-emitting layer shown in FIG. 2;
  • FIG. 4 is a schematic structural diagram of a plant germination irradiation diode provided in Embodiment 2 of the present invention.
  • Icons 220-AlN ceramic substrate; 221-light-emitting chip; 222-fluorescent glue; 223-conductive light-emitting layer; 224-lens; 301-graphene oxide; 302-first coating; 303-second coating.
  • the present invention provides a plant sprout irradiation diode, which includes a substrate, a light emitting chip disposed on the substrate, and a lens encapsulating the light emitting chip.
  • the inside of the lens is covered with a conductive light emitting layer, and the conductive light emitting layer includes an oxide.
  • the emission band of graphene and graphene oxide is 3-15 ⁇ m.
  • the plant germination irradiation diode provided by the invention is provided with a conductive light emitting layer with an emission band of 3-15 ⁇ m on the inner side of the lens, and the emitted spectrum is continuous, covering not only the visible light band but also the far infrared band of 3-15 ⁇ m, which can satisfy the plant
  • the irradiation requirements of various wavelengths of light required for germination can effectively shorten the plant germination cycle and increase the plant germination rate.
  • the method for preparing graphene oxide includes the following steps:
  • step (a) in step (a), first place concentrated sulfuric acid at a low temperature, then add graphite and nitrate to the concentrated sulfuric acid, and stir well, then add potassium permanganate and stir Uniform, carry out the oxidation reaction, and then raise the temperature to medium temperature to make the primary oxidation reaction proceed more completely.
  • step (b) the temperature is increased to a high temperature, and then hydrogen peroxide is added to perform secondary oxidation to obtain graphene oxide.
  • the low temperature is 0-4 ° C
  • the intermediate temperature is 25-40 ° C
  • the high temperature is 70-100 ° C.
  • the typical but non-limiting temperature of low temperature is, for example, 0, 1, 2, 3, or 4 ° C;
  • the typical but non-limiting temperature of intermediate temperature is, for example, 25, 28, 30, 32 , 35, 38 or 40 ° C,
  • typical but non-limiting temperatures of high temperature are 70, 72, 75, 78, 80, 82, 85, 88, 90, 92, 95, 98 or 100 ° C.
  • the nitrate is selected from at least one of sodium nitrate, magnesium nitrate and potassium nitrate.
  • the mass ratio of graphite, nitrate, potassium permanganate and hydrogen peroxide is (1-2): 1: (3-8): (5-15).
  • the emission band of the graphene oxide produced is concentrated in 3-15 ⁇ m.
  • the masses of graphite, nitrate, potassium permanganate and hydrogen peroxide are, for example, 1: 1: 1: 3: 5, 1: 1: 1: 3: 8, 1: 3: 10, 1: 1: 3: 12, 1: 1: 3: 15, 1: 1: 15: 5, 1: 1: 15: 8, 1: 1: 15: 10, 1: 1: 15: 12, 1: 1: 15: 15, 1: 1: 8: 5, 1: 1: 8: 8, 1: 1: 8: 10, 1: 1: 8: 12, 1: 1: 8: 15, 2: 1: 3: 5, 2: 1: 3: 8, 2: 3: 10, 2: 1: 3: 12, 2: 1: 3: 15, 2: 1: 5: 5, 2: 1: 5: 8, 2: 1: 5: 10, 2: 1: 5: 12, 2: 1: 5: 15, 2: 1: 8: 5, 2: 1: 8: 8, 2: 1: 8: 10, 2: 1: 12: 1: 1: 8: 15, 2: 1: 3: 5, 2: 1: 3: 8, 2: 3:
  • the thickness of the conductive light emitting layer is 5-25 ⁇ m.
  • the thickness of the conductive light emitting layer is, for example, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21 , 22, 23, 24, or 25 ⁇ m.
  • the thickness of the conductive light-emitting layer When the thickness of the conductive light-emitting layer is 5-25 ⁇ m, it has excellent light transmittance for visible light and far-infrared light emission. If the thickness of the conductive light-emitting layer is less than 5 ⁇ m, it is not conducive to the setting of the conductive light-emitting layer, and the emitted 3- The intensity of far-infrared light of 15 ⁇ m is poor and cannot meet the needs of plant sprout irradiation; when the thickness of the conductive light-emitting layer is greater than 25 ⁇ m, the light-transmittance of the conductive light-emitting layer to visible light is poor, which will reduce the intensity of visible light emitted by the diode.
  • the lens is made of graphene glass, and the raw materials of the graphene glass include quartz glass powder and graphene.
  • Graphene glass is made by mixing quartz glass powder and graphene, and the lens is made of graphene glass to improve the thermal conductivity of the lens and thus the life of the diode.
  • the mass ratio of the quartz glass powder and the graphene is (10-20): 1.
  • the mass of the quartz glass powder and graphene is, for example, 10: 1, 11: 1, 12: 1, 13: 1, 14: 1, 15: 1, 16: 1, 17: 1, 18: 1, 19: 1, or 20: 1.
  • the emission band of the light-emitting chip is 245-1000 nm.
  • the emission band of the light-emitting chip is 245-1000nm to ensure the need for visible light irradiation by the bud of the plant, especially when the emission band of the light-emitting chip is concentrated in the 400-750nm
  • the emission band of the light-emitting chip is more corresponding to the absorption spectrum of the plant, which is more conducive to the germination and growth of the plant.
  • the light emitting chip includes at least one of a blue light chip, a red light chip, and a far red light chip.
  • the emission band of the blue light chip is at 450nm
  • the emission band of the red light chip is at 660nm
  • the far red light chip is at 730nm.
  • the light-emitting chip is covered with a fluorescent glue
  • the fluorescent glue is a mixture of fluorescent powder and silica gel.
  • the light-emitting chip is covered with a fluorescent glue made of a mixture of fluorescent powder and silica gel, so that the fluorescent glue and the light-emitting chip can not only improve the photosynthetic light quantum flux, but also be more suitable for the needs of plant sprout growth.
  • the phosphor includes BaMgAl 11 O 17 : Eu, AlN: Eu, Sr 10 (PO 4 ) 6 Cl 2 : Eu, (Sr, Ba) 2 SiO 4 : Eu, BaSi 2 O 2 N 2 : Eu, (Ba, Sr) Si 2 O 2 N 2 : Eu, Y 3 Al 5 O 12 : Ce, (Y, Lu) 3 Al 5 O 12 : Ce, (La, Y) 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, Y 3 (Al, Ga) 5 O 12 : Ce, Lu 3 (Al, Ga) 5 O 12 : Ce, (Y, Lu) 3 (Al, Ga) 5 O 12 : Ce, La 3 (Al, Ga) 5 O 12 : Ce, (Y, Lu) 3 (Al, Ga) 5 O 12 : Ce, La 3 Si 6 N 12 : Ce, La 3 (Al, Si) 6 N 12 : Ce, La 3 (Al, Si) 6 N 12 : Ce,
  • the phosphor includes a red phosphor and a green phosphor.
  • the emission band of the red phosphor is 610-670nm, and the emission band of the green phosphor is 500nm-550nm.
  • a mixture of red phosphor and green phosphor as a phosphor and a silica gel mixed into a fluorescent glue, it is covered on the light emitting chip, so that the phosphor matches the light emitting chip and the conductive light emitting layer, and the spectral range of the emitted light is Wider and more effective to meet the needs of plant sprout growth.
  • the red phosphor includes CaAlSiN 3 : Eu.
  • CaAlSiN 3 : Eu has good fluorescence stability.
  • CaAlSiN 3 : Eu is used as a red phosphor to ensure the stability of red light when the diode is illuminated.
  • the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn.
  • CaAlSiN 3 : Eu has good fluorescence stability.
  • Mg 4 GeO 5.5 F: Mn is used in combination, the two have a synergistic effect, which can improve the photosynthetic light quantum flux while ensuring the fluorescence stability.
  • the mass ratio of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn is (1-2): (1-2).
  • typical but non-limiting masses of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn are, for example, 1: 2, 1: 1 or 2: 1.
  • the green phosphor includes Lu 3 Al 5 O 12 : Ce.
  • Lu 3 Al 5 O 12 Ce is selected as the green phosphor to ensure the fluorescence stability while maintaining a high photosynthetic light quantum flux.
  • the conductive light-emitting layer may have a hemispherical shape or a sheet shape.
  • the conductive light emitting layer further includes a first film and a second film, and graphene oxide is disposed between the first film and the second film.
  • the first cover film and the second cover film are provided to support and support the graphene oxide, so that it is more convenient to be disposed on the inner side of the lens.
  • the first film and the second film are both PET films.
  • PET film is also called high temperature resistant polyester film. It has excellent physical properties, chemical properties and dimensional stability, transparency and recyclability.
  • the substrate is a ceramic basic or metal substrate, preferably a ceramic substrate.
  • the plant sprout irradiation diode further includes a bracket, a cement and a lead, and the substrate is fixed on the bracket through the cement and is electrically connected to the bracket. Electrical connection.
  • the substrate is fixed on the bracket through the solid-state glue to improve the structural stability of the diode.
  • the present invention provides a method for preparing a plant germination irradiation diode, including the following steps:
  • the method for preparing a plant germination irradiation diode provided by the present invention has simple process and convenient operation, is suitable for large-scale industrial production, and effectively improves production efficiency.
  • the method for preparing a plant germination irradiation diode further includes step (D), fixing the substrate on the bracket.
  • the substrate is fixed on the bracket to further enhance the structural stability of the plant irradiation diode.
  • the method for preparing a plant germination irradiation diode further includes a step (S).
  • the step (S) is disposed between the step (A) and the step (B), and the light emitting chip is covered with fluorescence. gum.
  • the present invention provides a plant germination irradiation lamp, including at least one plant germination irradiation diode provided by the present invention.
  • the plant sprout irradiation lamp provided by the present invention adopts the plant sprout irradiation diode provided by the present invention as a light source, and the emitted spectrum is continuous, covering not only the visible light band but also the far-infrared band of 3-15 ⁇ m, which can meet the requirements
  • the irradiation requirements of light at various wavelengths can effectively shorten the plant germination cycle and improve the plant germination rate.
  • FIG. 1 is a schematic structural diagram of a sprout irradiation diode according to an embodiment of the present invention.
  • this embodiment provides a plant sprout irradiation diode, which includes an AlN ceramic substrate 220 and a light-emitting chip disposed on the AlN ceramic substrate 220. 221, and a lens 224 encapsulating the light-emitting chip 221.
  • the light-emitting chip 221 includes a blue light chip, a red light chip, and a far red light chip.
  • the emission band of the blue light chip is at 450 nm
  • the emission band of the red light chip is at 660 nm
  • the emission of the far red light chip The wavelength band is at 730nm.
  • the lens 224 is made of quartz glass powder and graphene, and the mass ratio of the quartz glass powder to graphene is 15: 1.
  • the inside of the lens 224 is covered with a conductive light-emitting layer 223 with a thickness of 15 ⁇ m.
  • 223 includes graphene oxide 301, and the emission band of graphene oxide 301 is 3-15 ⁇ m.
  • the graphene oxide 301 is prepared according to the following steps:
  • FIG. 2 is a spectrum diagram of graphene oxide 301 prepared according to the present invention, where Intensity represents intensity and Wavelength represents wavelength (wavelength). As can be seen from FIG. 2, the emission wavelength of the graphene oxide 301 is 3-15 ⁇ m.
  • FIG. 3 is a schematic cross-sectional structure diagram of the conductive light emitting layer 223 in this embodiment.
  • the conductive light emitting layer 223 further includes a first coating film 302 and a second coating film 303, and graphene oxide 301 is provided between the first coating film 302 and the second coating film 303 to provide a load and support for the graphene oxide 301 through the first coating film 302 and the second coating film 303; wherein the first coating film 302 and the second coating film 302
  • the cover film 303 is a PET film with a negligible thickness.
  • FIG. 4 is a schematic structural diagram of a sprout irradiation diode according to an embodiment of the present invention. As shown in FIG. 4, this embodiment provides a plant sprout irradiation diode. The difference between this embodiment and Embodiment 1 is that the light-emitting chip 221 The upper surface is provided with a fluorescent glue 222, which is made of a mixture of fluorescent powder and silica gel.
  • the fluorescent powder includes a red fluorescent powder and a green fluorescent powder. The mass ratio of the red fluorescent powder and the green fluorescent powder is 11: 1.
  • the powder is CaAlSiN 3 : Eu, and the green phosphor is Lu 3 Al 5 O 12 : Ce.
  • This embodiment provides a plant sprout irradiation diode.
  • the phosphor includes a red phosphor and a green phosphor, and the mass ratio of the red phosphor and the green phosphor is 11: 1. ;
  • the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn, and the mass ratio of the two is 1: 2.
  • This embodiment provides a plant sprout irradiation diode.
  • the phosphor includes a red phosphor and a green phosphor, and the mass ratio of the red phosphor and the green phosphor is 11: 1.
  • the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn, and the mass ratio of the two is 2: 1; the green phosphor is Lu 3 Al 5 O 12 : Ce.
  • This embodiment provides a plant sprout irradiation diode.
  • the phosphor includes a red phosphor and a green phosphor, and the mass ratio of the red phosphor and the green phosphor is 11: 1.
  • the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn, and the mass ratio of the two is 1: 1; the green phosphor is Lu 3 Al 5 O 12 : Ce.
  • This embodiment provides a plant sprout irradiation diode.
  • the phosphor is a mixture of red phosphor and green phosphor, and the mass ratio of the red phosphor and the green phosphor is 50. : 1; wherein the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn, and the mass ratio of the two is 1: 1, and the green phosphor is Lu 3 Al 5 O 12 : Ce; green fluorescence
  • the powder was Lu 3 Al 5 O 12 : Ce.
  • This embodiment provides a plant sprout irradiation diode.
  • This embodiment is different from Embodiment 5 in that the phosphor is a mixture of red phosphor and green phosphor, and the mass ratio of the red phosphor and the green phosphor is 1 : 10; wherein the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn, and the mass ratio of the two is 1: 1, and the green phosphor is Lu 3 Al 5 O 12 : Ce.
  • This embodiment provides a plant sprout irradiation diode.
  • the difference between this embodiment and Example 5 is that the phosphor is a red phosphor, and the red phosphor is a mixture of CaAlSiN 3 : Eu and Mg 4 GeO 5.5 F: Mn. , And the mass ratio of the two is 1: 1.
  • This embodiment provides a plant sprout irradiation diode.
  • This embodiment is different from Embodiment 5 in that the phosphor is a green phosphor and the green phosphor is Lu 3 Al 5 O 12 : Ce.
  • This embodiment is different from Embodiment 5 in that the thickness of the conductive light emitting layer is 5 ⁇ m.
  • This embodiment is different from Embodiment 5 in that the thickness of the conductive light emitting layer is 25 ⁇ m.
  • This embodiment is different from Embodiment 5 in that the thickness of the conductive light emitting layer is 2 ⁇ m.
  • This embodiment is different from Embodiment 5 in that the thickness of the conductive light emitting layer is 40 ⁇ m.
  • This embodiment is different from Embodiment 5 in that the lens is made of quartz glass powder.
  • the lens is made of quartz glass powder and graphene, and the mass ratio of the two is 5: 1.
  • the lens is made of quartz glass powder and graphene, and the mass ratio of the two is 50: 1.
  • the difference between this embodiment and Embodiment 5 is that the light emitting chip is a blue light chip, and the emission band of the blue light chip is at 450nm;
  • the difference between this embodiment and Embodiment 5 is that the light emitting chip is a red light chip, and the emission band of the red light chip is at 660 nm.
  • the difference between this embodiment and Embodiment 5 is that the light-emitting chip is a far-red light chip and the emission band of the far-red light chip is at 730 nm.
  • Embodiment 5 differs from Embodiment 5 in that the light emitting chip is a blue light chip and a red light chip, the emission band of the blue light chip is at 450 nm, and the emission band of the red light chip is at 660 nm.
  • This embodiment provides a method for preparing a plant germination irradiation diode, including the following steps:
  • the light emitting chip is arranged on the substrate, and optionally, a fluorescent glue is overlaid on the light emitting chip;
  • the substrate is packaged with a lens covered with a conductive light-emitting layer, and the light-emitting chip is disposed in a closed space surrounded by the lens and the substrate, thereby forming a plant bud irradiation diode.
  • This comparative example provides a light emitting diode.
  • the diode provided in this comparative example is different from Example 20 in that a conductive light emitting layer is not provided inside the lens.
  • the plant germination irradiation diodes provided in Examples 5 and 14-17 were tested for light transmittance and thermal conductivity. The test results are shown in Table 2.
  • test fields 1-16 and 16 test fields are provided, which are the test fields 1-16 and 16 test fields. Consistent, all suitable for growing strawberries.
  • test field 1 was irradiated with the diode provided in Example 1
  • test field 2-10 was irradiated with the diode provided in Example 5-13
  • test field 11-14 was used with Example 17-
  • the diodes provided by 20 were irradiated
  • the test field 15 was irradiated with diodes provided in Comparative Example 1.
  • Test field 16 was a blank control group, and no diodes were used for irradiation.
  • Test Field 1 (Example 1) 8.5 75.4 Test Field 2 (Example 5) 7.0 88.5 Test Field 3 (Example 6) 7.6 80.7 Test Field 4 (Example 7) 8.0 78.6 Test Field 5 (Example 8) 7.8 79.7 Test Field 6 (Example 9) 8.2 77.8 Test field 7 (Example 10) 7.3 82.5 Test field 8 (Example 11) 7.5 84.8 Test Field 9 (Example 12) 8.1 78.6 Test Field 10 (Example 13) 8.3 85.1 Test Field 11 (Example 17) 7.5 80.6 Test field 12 (Example 18) 7.6 81.2 Test field 13 (Example 19) 7.8 79.5 Test field 14 (Example 20) 7.2 82.4 Test Field 15 (Comparative Example 1) 11.5 71.2 Test field 16 (blank control) 13.5 67.3
  • the light-emitting chip is coated with a fluorescent glue made of a mixture of fluorescent powder and silica gel, so that the spectrum emitted by the diode is more suitable for the needs of strawberry seed germination, thereby reducing strawberry germination Cycle, improving strawberry germination rate.
  • test field 2 when the phosphor in the fluorescent glue is a mixture of red phosphor and green phosphor, and the mass ratio of the two is (10-15): 1,
  • the spectrum emitted by the diode is more suitable for the needs of strawberry seed germination and growth, thereby shortening the strawberry germination period and improving the strawberry germination rate.
  • test field 2 From the comparison between test field 2 and test field 11-14, it can be seen that when the light emitting chip in the diode includes red light chip, blue light chip and far red light chip, the spectrum emitted by the diode is more suitable for the needs of strawberry sprout growth, and it can effectively improve strawberry sprouts. Rate, shorten the strawberry germination cycle.

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  • Luminescent Compositions (AREA)

Abstract

Diode d'irradiation pour germination de plante et son procédé de préparation, et lampe d'irradiation pour germination de plante, ceux-ci se rapportant au domaine technique des diodes. La diode d'irradiation pour germination de plante comprend un substrat, une puce électroluminescente agencée sur le substrat, et une lentille encapsulant la puce électroluminescente, le côté intérieur de la lentille étant recouvert d'une couche électroluminescente conductrice, la couche électroluminescente conductrice comprenant de l'oxyde de graphène, et la bande d'onde d'émission de l'oxyde de graphène étant de 3 à 15 µm. Le problème technique de l'absence d'une certaine bande d'onde infrarouge lointaine du fait que les lampes à DEL actuelles pour la germination et la croissance de plante sont toutes des sources de lumière froide est amélioré.Selon la diode d'irradiation pour germination de plante selon la présente invention, le côté intérieur d'une lentille est recouvert d'une couche électroluminescente conductrice ayant une bande d'onde d'émission de 3 à 15 µm, et ainsi le spectre émis est continu, et non seulement la bande d'onde de lumière visible est recouverte, mais une bande d'onde infrarouge lointaine de 3 à 15 µm est également recouverte, de telle sorte que les exigences d'irradiation de lumière avec diverses bandes d'onde requises pour la germination de plante peuvent être satisfaites, le cycle de germination de plante peut être efficacement raccourci, et le taux de germination de plante peut être amélioré.
PCT/CN2019/084578 2018-08-01 2019-04-26 Diode d'irradiation pour germination de plante et son procédé de préparation, et lampe d'irradiation pour germination de plante WO2020015418A1 (fr)

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CN109037404B (zh) * 2018-08-01 2019-06-18 广东旭宇光电有限公司 植物萌芽照射二极管及其制备方法和植物萌芽照射灯
CN109768144B (zh) * 2018-12-25 2020-03-31 旭宇光电（深圳）股份有限公司 植物照明用的发光装置
CN111073378B (zh) * 2019-11-29 2022-02-01 宁波瑞凌新能源科技有限公司 包括无机荧光材料的复合涂料
CN111769106A (zh) * 2020-08-03 2020-10-13 肖龙 一种石墨烯复合光子二极管光源
CN112538257B (zh) * 2020-12-28 2022-06-03 甘肃颐年聚光科技有限责任公司 一种可促进植物生长的玻璃温室用转光膜及其制备方法

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CN109037404A (zh) * 2018-08-01 2018-12-18 广东旭宇光电有限公司 植物萌芽照射二极管及其制备方法和植物萌芽照射灯

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CN103811651A (zh) * 2012-11-12 2014-05-21 铼钻科技股份有限公司 导热复合材料及其衍生的发光二极管
CN109037404A (zh) * 2018-08-01 2018-12-18 广东旭宇光电有限公司 植物萌芽照射二极管及其制备方法和植物萌芽照射灯

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