WO2020011259A1 - Thin film, thin film solar cell and preparation method therefor - Google Patents

Thin film, thin film solar cell and preparation method therefor Download PDF

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WO2020011259A1
WO2020011259A1 PCT/CN2019/095859 CN2019095859W WO2020011259A1 WO 2020011259 A1 WO2020011259 A1 WO 2020011259A1 CN 2019095859 W CN2019095859 W CN 2019095859W WO 2020011259 A1 WO2020011259 A1 WO 2020011259A1
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layer
film
resin film
thin film
thin
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PCT/CN2019/095859
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French (fr)
Chinese (zh)
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徐强
白安琪
郭会永
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北京铂阳顶荣光伏科技有限公司
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Publication of WO2020011259A1 publication Critical patent/WO2020011259A1/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/10—Homopolymers or copolymers of propene
    • C08J2323/12—Polypropene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2333/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2333/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C08J2333/10—Homopolymers or copolymers of methacrylic acid esters
    • C08J2333/12—Homopolymers or copolymers of methyl methacrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C08J2367/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2377/00—Characterised by the use of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • Embodiments of the present invention relate to the technical field of thin films, and in particular, to a thin film, a thin film solar cell, and a preparation method thereof.
  • thin-film solar cells Compared with conventional crystalline silicon solar energy, thin-film solar cells have many advantages, such as light weight, thin thickness, and foldability, and are easy to achieve large-scale commercial production.
  • Thin-film solar cells usually include a substrate layer, a battery core layer, and a cover film layer.
  • the cover film layer needs to have high light transmission efficiency, and it also needs to have better Water barrier properties, oxygen barrier properties, etc., among them, the water barrier performance of the cover film layer of ordinary thin film solar cells needs to reach 10 -4 g / m 2 / day or less.
  • the cover film layer is made of multiple layers of resin, and the surface layer of the cover film layer is a transparent polymer containing fluorine, whose main functions are reinforcement, weather resistance, UV resistance, moisture resistance, low dielectric constant, and high breakdown voltage.
  • the bottom layer of the cover film layer is a resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) after surface treatment.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • the main function is to block water and oxygen, and the surface layer and the bottom layer Adhesion is carried out between them.
  • the underlying process of the cover film layer is to deposit a thin layer of inorganic material on the surface of PET or PEN by atomic layer deposition (Atom Layer Deposition, ALD for short) to prepare a thin cover layer that meets the market demand. After testing, The thin cover layer has a water barrier performance of less than 10 -4 g / m 2 / day, which cannot meet the performance requirements of ultra-thin and high water barrier.
  • ALD atomic layer deposition
  • embodiments of the present invention provide a thin film, a thin film solar cell, and a method for preparing the same.
  • the main technical problem to be solved is that the cover film has poor water blocking performance.
  • the embodiments of the present invention mainly provide the following technical solutions:
  • an embodiment of the present invention provides a method for preparing a film, including:
  • a second covering layer of an inorganic material is formed on the first covering layer by a deposition process.
  • a surface of the resin film layer is covered with a silicone coating liquid, and a first coating layer is formed after the silicone coating liquid covering the surface of the resin film layer is dried.
  • the silicone coating liquid is prepared by the following method:
  • the silicon solution is dissolved in an ethanol solution to which an emulsifier is added to prepare a silicone coating solution.
  • the drying temperature is 60-120 degrees Celsius, and the drying time is 1-5 hours.
  • the coating process is a Spin-on-Glass (SOG) process
  • the deposition process is an atomic layer deposition (Atom, Layer, Deposition, ALD for short) process.
  • the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate ( PMMA) or polypropylene (PP) or polyamide (PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PMMA polymethyl methacrylate
  • PP polypropylene
  • PA polyamide
  • PBT polytetramethylene terephthalate
  • PI polyimide
  • the inorganic material of the second cover layer is Al 2 O 3 or TiN or TiO 2 .
  • an embodiment of the present invention provides a film including:
  • a first covering layer covering a surface hole on a surface of the resin film layer
  • a second covering layer of an inorganic material is disposed on the first covering layer.
  • the thickness of the first cover layer is 10-1000 nm
  • the thickness of the second cover layer is 10-100 nm.
  • an embodiment of the present invention provides a surface film layer of a thin-film solar cell, including:
  • Fluorine-containing film which is a fluorine-containing polymer
  • the film is bonded to the fluorine-containing film.
  • an embodiment of the present invention provides a thin-film solar cell, including:
  • the battery core layer is located between the surface film layer of the thin-film solar cell and the substrate layer, and the fluorine-containing film is exposed.
  • the thin film, the thin film solar cell and the preparation method provided by the technical solution of the present invention have at least the following advantages:
  • the surface of the resin film layer is coated with a first covering layer, so that the first covering layer covers the surface holes of the surface of the resin film layer. Then, a second covering layer of an inorganic material is formed on the first covering layer by a deposition process.
  • the inorganic thin film layer cannot The surface holes of the resin film layer are completely covered, so the water-blocking performance of the final surface-modified resin film layer is not good.
  • the surface holes of the resin film layer are
  • the cover of the first covering layer makes the inorganic thin film layer formed by the second covering layer of the inorganic material have better water blocking performance, and the water blocking performance of the thin film and the thin film solar cell is higher.
  • FIG. 1 is a schematic flowchart of a method for preparing a thin film according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a resin film layer in a method for manufacturing a thin film according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a method for preparing a thin film provided by an embodiment of the present invention after a first cover layer is formed on a surface of a resin film layer;
  • FIG. 4 is a schematic structural diagram of a thin film manufacturing method provided by an embodiment of the present invention after a second coating layer of an inorganic material is formed on a first coating layer;
  • FIG. 5 is a schematic structural diagram of a thin-film solar cell according to an embodiment of the present invention.
  • the method for preparing a thin film provided in this embodiment, firstly coating and forming a first covering layer on the surface of the resin film layer, so that the first covering layer covers the surface holes of the surface of the resin film layer, and then performs the inorganic material.
  • the second deposition layer of the inorganic material prepared by the deposition process on the first cover layer has a better water blocking effect and improves the film. Water resistance.
  • FIG. 4 are one embodiment of a method for preparing a thin film provided by the present invention. Please refer to FIG. 1 to FIG. 4.
  • a first covering layer 20 is formed on the surface of the resin film layer 10 by a coating process, so that the first covering layer 20 covers the surface holes 11 on the surface of the resin film layer 10; wherein the surface holes on the surface of the resin film layer are
  • the microporous structure has a pore diameter of about 10-100 nm, but it is not limited to this.
  • the microporous structure exists due to the material characteristics of the resin film layer.
  • the material of the resin film layer may be polyethylene terephthalate.
  • PET polyethylene naphthalate
  • PMMA polymethyl methacrylate
  • PP polypropylene
  • PA polyamide
  • PBT polytetramethylene terephthalate
  • PI polyimide
  • a second covering layer 30 of inorganic material is formed on the first covering layer 20 by a deposition process.
  • a first covering layer is coated on the surface of the resin film layer, so that the first covering layer covers the surface holes on the surface of the resin film layer, and then a deposition process is used on the first
  • a second cover layer of an inorganic material is formed on the cover layer.
  • the inorganic thin film layer cannot completely cover the surface holes of the resin film layer itself. Therefore, the water-blocking performance of the final surface-modified resin film layer is not good.
  • the inorganic material is made.
  • the inorganic thin film layer formed by the second cover layer has better water blocking performance, and the thin film and thin film solar cells have higher water blocking performance.
  • the coating process can use a coating liquid to coat the surface of the resin film layer. After the coating liquid coated on the surface of the resin film layer is naturally air-dried or dried, a first cover layer is formed on the surface of the resin film layer, so that Cover the table hole.
  • the coating liquid may be a silicone coating liquid
  • a silicone coating liquid may be used to cover the surface of the resin film layer
  • the silicone coating liquid covering the surface of the resin film layer may be dried.
  • a first cover layer is formed after drying. Since the silicone coating liquid has a certain fluidity, the surface holes of the surface of the resin film layer can be covered well.
  • the drying temperature may be 60-120 ° C, the drying time is 1-5 hours, to form a first SiO 2
  • the cover layer can maintain the original characteristics of the resin film layer when the silicone coating liquid is dried.
  • the silicone coating liquid is prepared by the following method: a mixture of ethyl orthosilicate (TEOS), water, hydrogen chloride, and ethanol is refluxed at 50-80 degrees Celsius to obtain a silicon solution; the silicon solution is dissolved in an added emulsifier Of ethanol solution to prepare a silicone coating solution.
  • TEOS ethyl orthosilicate
  • Poloxamer can be used as an emulsifier.
  • the coating process is a spin-on-glass process, and the above-mentioned silicone coating liquid is used as a silicone spin-coating liquid.
  • the deposition process can be an atomic layer deposition process.
  • the deposition temperature of the atomic layer deposition process is 50-150 degrees Celsius
  • the pressure is 10 hato-100 torr
  • the thickness of the second deposited layer is 10-100 nm
  • the deposited inorganic material It is Al 2 O 3 or TiN or TiO 2 .
  • the embodiments provided by the present invention improve the overall water vapor barrier performance of the thin film; on the other hand, the coating process takes less time and costs than the atomic layer deposition process, and can reduce the thickness of the film layer to be deposited by the atomic layer deposition process. This can reduce the time and cost of preparing the entire film.
  • a first covering layer is first provided on the surface of the resin film layer, so that the first covering layer covers the surface holes on the surface of the resin film layer, and the second covering layer of inorganic material is provided on the first In a cover layer, since the surface holes on the surface of the resin film layer are covered, the second cover layer of the inorganic material has a better water blocking effect, and the water resistance of the film is improved.
  • the film according to an embodiment of the present invention includes a resin film layer, a first cover layer, and a second cover layer of an inorganic material.
  • a first covering layer covers the surface holes of the surface of the resin film layer, and a second covering layer of an inorganic material is disposed on the first covering layer.
  • the second covering layer, the first covering layer, and the resin film layer of the inorganic material are sequentially stacked, and the surface holes on the surface of the resin film layer of the first covering layer are covered by the first covering layer.
  • the inorganic thin film layer cannot completely cover the surface pores of the resin film layer itself, therefore, the water-blocking performance of the final surface-modified resin film layer is not good, compared with the prior art
  • the inorganic thin film layer formed by the second covering layer of the inorganic material has better water blocking performance, and the water blocking performance of the film Higher.
  • the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide ( PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
  • the material of the first cover layer is SiO 2 or the like;
  • the inorganic material is Al 2 O 3 or TiN or TiO 2 .
  • the thickness of the first cover layer is 10-1000 nm; the thickness of the second cover layer is 10-100 nm.
  • the thin film in this embodiment can be prepared by using the method for preparing the thin film in the above embodiment.
  • a surface film layer of a thin-film solar cell includes a fluorine-containing film and a thin film.
  • the film is bonded to the fluorine-containing film.
  • the film includes a resin film layer, a first cover layer, and a second cover layer of an inorganic material.
  • a first covering layer covers the surface holes of the surface of the resin film layer, and a second covering layer of an inorganic material is disposed on the first covering layer.
  • the fluorine-containing film mainly has the characteristics of transparency, ultraviolet resistance, moisture resistance, low dielectric constant, and high breakdown voltage.
  • the fluorine-containing film and the film can be bonded by an adhesive.
  • the material of the fluorine-containing film is ethylene-tetrafluoroethylene copolymer (ETFE), polyvinyl fluoride (PVF), or polyvinylidene fluoride (PVDF), but is not limited thereto.
  • the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide ( PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
  • the material of the first cover layer is SiO 2 or the like;
  • the inorganic material is Al 2 O 3 or TiN or TiO 2 .
  • the thickness of the first cover layer is 10-1000 nm; the thickness of the second cover layer is 10-100 nm.
  • the thin film in this embodiment can be prepared by using the method for preparing the thin film in the above embodiment.
  • FIG. 5 is an embodiment of a thin-film solar cell provided by the present invention.
  • a thin-film solar cell according to an embodiment of the present invention includes: a thin-film solar cell surface film layer 110, a substrate layer 120, and a photoelectric conversion layer 130.
  • the conversion layer 130 is located between the thin-film solar cell surface film layer 110 and the substrate layer 120.
  • the thin-film solar cell surface film layer can use the thin-film solar cell surface film layer of the above embodiment, which is not repeated in the embodiment of the present invention.
  • the fluorine-containing film 111 is exposed, and the thin film 112 is located between the fluorine-containing film 111 and the photoelectric conversion layer 130.
  • the substrate layer can be made of stainless steel or aluminum conductive material
  • the photoelectric conversion layer can be made of copper indium gallium selenium (CIGS) compound material or copper indium selenium (CIS) or gallium arsenide (GaAS) or cadmium telluride (CdTe) or perovskite Etc., but not limited to this.
  • the components in the device in the embodiment can be adaptively changed and set in one or more devices different from the embodiment.
  • the components in the embodiment can be combined into one component, and furthermore, they can be divided into a plurality of sub-components.
  • all features disclosed in this specification including the accompanying claims, abstract, and drawings), and all components of any device so disclosed may be combined in any combination.
  • Each feature disclosed in this specification including the accompanying claims, abstract and drawings may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.

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Abstract

The embodiments of the present invention relate to the technical field of thin films, and relate to a thin film, a thin film solar cell and a preparation method therefor; the technical problem to be mainly solved is the water-blocking properties of a cover film layer being poor. The technical solution that is mainly employed is as follows: the preparation method for a thin film comprises: forming a first cover layer on a surface of a resin film layer by employing a coating process so that the first cover layer covers surface holes on the surface of the resin film layer; forming a second cover layer of an inorganic material on the first cover layer by employing a deposition process. Compared with the existing technology, in the embodiments of the present invention, since the surface holes of the resin film layer are covered by the first cover layer, an inorganic film layer formed by the second cover layer of an inorganic material thus has good water-blocking performance. Thus, the thin film and thin film solar cells have high water-blocking performance.

Description

薄膜、薄膜太阳能电池及其制备方法Thin film, thin film solar cell and preparation method thereof
本申请要求于2018年7月13日提交中国专利局、申请号为201810771540.8、发明名称为“薄膜、薄膜太阳能电池及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims priority from a Chinese patent application filed with the Chinese Patent Office on July 13, 2018, with an application number of 201810771540.8, and the invention name is "Thin Film, Thin Film Solar Cell, and Method of Making It" Applying.
技术领域Technical field
本发明实施例涉及薄膜技术领域，特别是涉及一种薄膜、薄膜太阳能电池及其制备方法。Embodiments of the present invention relate to the technical field of thin films, and in particular, to a thin film, a thin film solar cell, and a preparation method thereof.
背景技术Background technique
相较于常规的晶体硅太阳能，薄膜太阳能电池具有重量轻、厚度薄、可折叠等多种优点，且易于实现规模的商业化生产，是光伏发电高效的太阳能电池。Compared with conventional crystalline silicon solar energy, thin-film solar cells have many advantages, such as light weight, thin thickness, and foldability, and are easy to achieve large-scale commercial production.
薄膜太阳能电池通常包括衬底层、电池核心层、覆盖膜层。其中，由于薄膜太阳能电池通常处于环境较为苛刻的环境当中，在风吹、雨淋、日晒的多种条件下，覆盖膜层需要其具有较高的透光效率的同时，还需要具有较好的阻水性、隔氧性等，其中，普通的薄膜太阳能电池的覆盖膜层的阻水性能要求需要达到了10 -4g/m 2/天以下。 Thin-film solar cells usually include a substrate layer, a battery core layer, and a cover film layer. Among them, since the thin film solar cell is usually in a harsh environment, under a variety of conditions such as wind, rain, and sun, the cover film layer needs to have high light transmission efficiency, and it also needs to have better Water barrier properties, oxygen barrier properties, etc., among them, the water barrier performance of the cover film layer of ordinary thin film solar cells needs to reach 10 -4 g / m 2 / day or less.
其中，覆盖膜层有多层树脂构造而成，覆盖膜层的表层为含氟的透明聚合物，主要作用为增强、耐候、抗紫外、防潮、低介电常数、高击穿电压等。覆盖膜层的底层为表面处理后的聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)等树脂，主要作用为阻水、隔氧，表层和底层之间由粘结剂进行粘连。Among them, the cover film layer is made of multiple layers of resin, and the surface layer of the cover film layer is a transparent polymer containing fluorine, whose main functions are reinforcement, weather resistance, UV resistance, moisture resistance, low dielectric constant, and high breakdown voltage. The bottom layer of the cover film layer is a resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) after surface treatment. The main function is to block water and oxygen, and the surface layer and the bottom layer Adhesion is carried out between them.
覆盖膜层的底层处理过程为在PET或PEN的表面采用原子层沉积法(Atom Layer Deposition，简写ALD)沉积一薄层无机材料，以制备满足市场需求较薄的覆盖薄层，经测试后，较薄的覆盖薄层阻水性能小于10 -4g/m 2/天，无法满足超薄高阻水的性能要求。 The underlying process of the cover film layer is to deposit a thin layer of inorganic material on the surface of PET or PEN by atomic layer deposition (Atom Layer Deposition, ALD for short) to prepare a thin cover layer that meets the market demand. After testing, The thin cover layer has a water barrier performance of less than 10 -4 g / m 2 / day, which cannot meet the performance requirements of ultra-thin and high water barrier.
发明内容Summary of the invention
有鉴于此，本发明实施例提供一种薄膜、薄膜太阳能电池及其制备方法，主要解决的技术问题是覆盖膜层阻水性能较差。In view of this, embodiments of the present invention provide a thin film, a thin film solar cell, and a method for preparing the same. The main technical problem to be solved is that the cover film has poor water blocking performance.
为达到上述目的，本发明实施例主要提供如下技术方案：To achieve the foregoing objective, the embodiments of the present invention mainly provide the following technical solutions:
一方面，本发明的实施例提供一种薄膜的制备方法，包括：In one aspect, an embodiment of the present invention provides a method for preparing a film, including:
采用涂覆工艺在树脂膜层的表面上形成第一覆盖层，使第一覆盖层将树脂膜层的表面的表孔封盖；Forming a first covering layer on the surface of the resin film layer by a coating process, so that the first covering layer covers the surface holes of the surface of the resin film layer;
采用沉积工艺在所述第一覆盖层上形成无机材料的第二覆盖层。A second covering layer of an inorganic material is formed on the first covering layer by a deposition process.
本发明实施例的目的及解决其技术问题还可采用以下技术措施进一步实现。The purpose of the embodiments of the present invention and the technical problems thereof can be further achieved by using the following technical measures.
可选的，前述的制备方法，其中采用有机硅涂覆液覆盖所述树脂膜层的表面，对覆盖所述树脂膜层的表面的有机硅涂覆液烘干后形成第一覆盖层。Optionally, in the foregoing preparation method, a surface of the resin film layer is covered with a silicone coating liquid, and a first coating layer is formed after the silicone coating liquid covering the surface of the resin film layer is dried.
可选的，前述的制备方法，其中所述有机硅涂覆液由下述方法制备：Optionally, in the foregoing preparation method, the silicone coating liquid is prepared by the following method:
正硅酸乙酯TEOS、水、氯化氢和乙醇的混合物在50-80摄氏度下回流得到硅溶液；A mixture of TEOS, water, hydrogen chloride and ethanol was refluxed at 50-80 degrees Celsius to obtain a silicon solution;
将所述硅溶液溶于添加乳化剂的乙醇溶液制备有机硅涂覆液。The silicon solution is dissolved in an ethanol solution to which an emulsifier is added to prepare a silicone coating solution.
可选的，前述的制备方法，其中所述烘干的温度在60-120摄氏度，所述烘干的时间在1-5小时。Optionally, in the foregoing preparation method, the drying temperature is 60-120 degrees Celsius, and the drying time is 1-5 hours.
可选的，前述的制备方法，其中所述涂覆工艺为旋涂玻璃(Spin-on-Glass,简写SOG)工艺；Optionally, in the foregoing preparation method, the coating process is a Spin-on-Glass (SOG) process;
所述沉积工艺为原子层沉积(Atom Layer Deposition，简写ALD)工艺。The deposition process is an atomic layer deposition (Atom, Layer, Deposition, ALD for short) process.
可选的，前述的制备方法，其中所述树脂膜层的材质为聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)或聚甲基丙烯酸甲酯(PMMA)或聚丙烯(PP)或聚酰胺(PA)或聚对苯二甲酸四次甲基酯(PBT)或聚酰亚胺(PI)或尼龙；Optionally, in the foregoing preparation method, the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate ( PMMA) or polypropylene (PP) or polyamide (PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
所述第二覆盖层的无机材料为Al 2O 3或TiN或TiO 2。 The inorganic material of the second cover layer is Al 2 O 3 or TiN or TiO 2 .
另一方面，本发明的实施例提供一种薄膜，包括：In another aspect, an embodiment of the present invention provides a film including:
树脂膜层；Resin film
第一覆盖层，封盖所述树脂膜层的表面的表孔；A first covering layer covering a surface hole on a surface of the resin film layer;
无机材料的第二覆盖层，设置于所述第一覆盖层。A second covering layer of an inorganic material is disposed on the first covering layer.
本发明实施例的目的及解决其技术问题还可采用以下技术措施进一步实现。The purpose of the embodiments of the present invention and the technical problems thereof can be further achieved by using the following technical measures.
可选的，前述的薄膜，其中所述第一覆盖层的厚度在10-1000nm；Optionally, in the foregoing film, the thickness of the first cover layer is 10-1000 nm;
所述第二覆盖层的厚度在10-100nm。The thickness of the second cover layer is 10-100 nm.
另一方面，本发明的实施例提供一种薄膜太阳能电池表面膜层，包括：In another aspect, an embodiment of the present invention provides a surface film layer of a thin-film solar cell, including:
含氟膜，为含氟的聚合物；Fluorine-containing film, which is a fluorine-containing polymer;
上述的薄膜，所述薄膜与所述含氟膜贴合。In the above film, the film is bonded to the fluorine-containing film.
另一方面，本发明的实施例提供一种薄膜太阳能电池，包括：In another aspect, an embodiment of the present invention provides a thin-film solar cell, including:
上述的薄膜太阳能电池表面膜层；The above-mentioned thin film solar cell surface film layer;
衬底层；Substrate layer
电池核心层，位于所述薄膜太阳能电池表面膜层与所述衬底层之间，所述含氟膜外露。The battery core layer is located between the surface film layer of the thin-film solar cell and the substrate layer, and the fluorine-containing film is exposed.
借由上述技术方案，本发明技术方案提供的薄膜、薄膜太阳能电池及其制备方法至少具有下列优点：According to the above technical solution, the thin film, the thin film solar cell and the preparation method provided by the technical solution of the present invention have at least the following advantages:
本发明实施例提供的技术方案中，在对薄膜的制备方法中，在树脂膜层的表面上涂覆第一覆盖层，使第一覆盖层将树脂膜层的表面的表孔被封盖后，再采用沉积工艺在所述第一覆盖层上形成无机材料的第二覆盖层，现有技术中，由于原子层沉积法工艺的高保型性(高阶梯覆盖率)，该无机薄膜层并不能完全覆盖住树脂膜层本身的表孔，因而，最终表面改性树脂膜层的阻水性能并不好，相对于现有技术，本发明的实施例中，由于树脂膜层本身的表孔被第一覆盖层封盖，使得无机材料的第二覆盖层形成的无机薄膜层具备较好的阻水性能，薄膜、薄膜太阳能电池的阻水性能较高。In the technical solution provided by the embodiment of the present invention, in the method for preparing a thin film, the surface of the resin film layer is coated with a first covering layer, so that the first covering layer covers the surface holes of the surface of the resin film layer. Then, a second covering layer of an inorganic material is formed on the first covering layer by a deposition process. In the prior art, due to the high shape retention (high step coverage) of the atomic layer deposition process, the inorganic thin film layer cannot The surface holes of the resin film layer are completely covered, so the water-blocking performance of the final surface-modified resin film layer is not good. Compared with the prior art, in the embodiments of the present invention, the surface holes of the resin film layer are The cover of the first covering layer makes the inorganic thin film layer formed by the second covering layer of the inorganic material have better water blocking performance, and the water blocking performance of the thin film and the thin film solar cell is higher.
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明实施例的技术手段，并可依照说明书的内容予以实施，以下以本发明的较佳实施例并配合附图详细说明如后。The above description is only an overview of the technical solution of the present invention. In order to understand the technical means of the embodiments of the present invention more clearly and can be implemented in accordance with the contents of the description, the following describes in detail the preferred embodiments of the present invention and the accompanying drawings as follows .
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用相同的参考符号表示相同的部件。在附图中：Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the detailed description of the preferred embodiments below. The drawings are only for the purpose of illustrating preferred embodiments and are not to be considered as limiting the invention. Moreover, the same reference numerals are used throughout the drawings to refer to the same parts. In the drawings:
图1是本发明的实施例提供的一种薄膜的制备方法的流程示意图；FIG. 1 is a schematic flowchart of a method for preparing a thin film according to an embodiment of the present invention; FIG.
图2是本发明的实施例提供的一种薄膜的制备方法中树脂膜层的结构示意图；2 is a schematic structural diagram of a resin film layer in a method for manufacturing a thin film according to an embodiment of the present invention;
图3是本发明的实施例提供的一种薄膜的制备方法中在树脂膜层的表面上形成第一覆盖层后的结构示意图；3 is a schematic structural diagram of a method for preparing a thin film provided by an embodiment of the present invention after a first cover layer is formed on a surface of a resin film layer;
图4是本发明的实施例提供的一种薄膜的制备方法中在第一覆盖层上形成无机材料的第二覆盖层后的结构示意图；4 is a schematic structural diagram of a thin film manufacturing method provided by an embodiment of the present invention after a second coating layer of an inorganic material is formed on a first coating layer;
图5是本发明的实施例提供的一种薄膜太阳能电池的结构示意图。FIG. 5 is a schematic structural diagram of a thin-film solar cell according to an embodiment of the present invention.
具体实施方式detailed description
为更进一步阐述本发明为达成预定发明实施例目的所采取的技术手段及功效,以下结合附图及较佳实施例，对依据本发明实施例提出的薄膜、薄膜太阳能电池及其制备方法其具体实施方式、结构、特征及其功效，详细说明如后。在下述说明中，不同的“一实施例”或“实施例”指的不一定是同一实施例。此外，一或多个实施例中的特定特征、结构、或特点可由任何合适形式组合。In order to further explain the technical means and effects adopted by the present invention to achieve the objectives of the predetermined embodiments of the present invention, the following specifically describes the thin films, thin-film solar cells and preparation methods thereof according to the embodiments of the present invention with reference to the drawings and preferred embodiments The details of the implementation, structure, features, and effects are as follows. In the following description, different "one embodiment" or "an embodiment" does not necessarily mean the same embodiment. Furthermore, the particular features, structures, or characteristics in one or more embodiments may be combined in any suitable form.
发明人发现，由于原子层沉积法工艺的高保型性(高阶梯覆盖率)，该无机薄膜层并不能完全覆盖住树脂膜层本身的表孔，因而，最终表面改性树脂膜层的阻水性能并不好，因而导致无法满足超薄高阻水的性能要求。The inventor found that due to the high shape retention (high step coverage) of the atomic layer deposition process, the inorganic thin film layer could not completely cover the surface pores of the resin film layer itself, and therefore, the final surface modified resin film layer was water-blocking The performance is not good, which makes it unable to meet the performance requirements of ultra-thin and high water resistance.
本实施例提供的一种薄膜的制备方法，先在树脂膜层的表面上涂覆形成第一覆盖层，使第一覆盖层将树脂膜层的表面的表孔被封盖，再进行无机材料的第二覆盖层的沉积工艺，由于树脂膜层的表面的表孔被封盖，在第一覆盖层上采用沉积工艺制备的无机材料的第二沉积层的阻水效果较好，提高了薄膜的阻水性。In the method for preparing a thin film provided in this embodiment, firstly coating and forming a first covering layer on the surface of the resin film layer, so that the first covering layer covers the surface holes of the surface of the resin film layer, and then performs the inorganic material. In the deposition process of the second cover layer, since the surface holes on the surface of the resin film layer are covered, the second deposition layer of the inorganic material prepared by the deposition process on the first cover layer has a better water blocking effect and improves the film. Water resistance.
图1至图4为本发明提供的薄膜的制备方法一实施例，请参阅图1至图4，本发明的一个实施例提出的薄膜的制备方法，包括：1 to FIG. 4 are one embodiment of a method for preparing a thin film provided by the present invention. Please refer to FIG. 1 to FIG. 4.
采用涂覆工艺在树脂膜层10的表面上形成第一覆盖层20，使第一覆盖层20将树脂膜层10的表面的表孔11封盖；其中，树脂膜层的表面的表孔为微孔结构，其孔径大致在10-100nm，但不局限于此，微孔结构由于树脂膜层的材料特性而存在，具体的，树脂膜层的材质可为聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)或聚甲基丙烯酸甲酯(PMMA)或聚丙烯(PP)或聚酰胺(PA)或聚对苯二甲酸四次甲基酯(PBT)或聚酰亚胺(PI)或尼龙， 但不局限于此。A first covering layer 20 is formed on the surface of the resin film layer 10 by a coating process, so that the first covering layer 20 covers the surface holes 11 on the surface of the resin film layer 10; wherein the surface holes on the surface of the resin film layer are The microporous structure has a pore diameter of about 10-100 nm, but it is not limited to this. The microporous structure exists due to the material characteristics of the resin film layer. Specifically, the material of the resin film layer may be polyethylene terephthalate. (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide (PA) or polytetramethylene terephthalate (PBT ) Or polyimide (PI) or nylon, but is not limited to this.
采用沉积工艺在所述第一覆盖层20上形成无机材料的第二覆盖层30。A second covering layer 30 of inorganic material is formed on the first covering layer 20 by a deposition process.
在对薄膜的制备方法中，在树脂膜层的表面上涂覆第一覆盖层，使第一覆盖层将树脂膜层的表面的表孔被封盖后，再采用沉积工艺在所述第一覆盖层上形成无机材料的第二覆盖层，现有技术中，由于原子层沉积法工艺的高保型性(高阶梯覆盖率)，该无机薄膜层并不能完全覆盖住树脂膜层本身的表孔，因而，最终表面改性树脂膜层的阻水性能并不好，相对于现有技术，本发明的实施例中，由于树脂膜层本身的表孔被第一覆盖层封盖，使得无机材料的第二覆盖层形成的无机薄膜层具备较好的阻水性能，薄膜、薄膜太阳能电池的阻水性能较高。In the method for preparing a thin film, a first covering layer is coated on the surface of the resin film layer, so that the first covering layer covers the surface holes on the surface of the resin film layer, and then a deposition process is used on the first A second cover layer of an inorganic material is formed on the cover layer. In the prior art, due to the high shape retention (high step coverage) of the atomic layer deposition process, the inorganic thin film layer cannot completely cover the surface holes of the resin film layer itself. Therefore, the water-blocking performance of the final surface-modified resin film layer is not good. Compared with the prior art, in the embodiments of the present invention, since the surface holes of the resin film layer are covered by the first covering layer, the inorganic material is made. The inorganic thin film layer formed by the second cover layer has better water blocking performance, and the thin film and thin film solar cells have higher water blocking performance.
涂覆工艺可采用涂层液体涂覆于树脂膜层的表面，涂覆于树脂膜层的表面的涂层液体自然风干或烘干后，在树脂膜层的表面上形成第一覆盖层，以封盖表孔。在一些优选的实施例中，涂层液体可采用机硅涂覆液，采用有机硅涂覆液覆盖所述树脂膜层的表面，对覆盖所述树脂膜层的表面的有机硅涂覆液烘干后形成第一覆盖层。由于机硅涂覆液具有一定的流动性，可以很好的将树脂膜层的表面的表孔覆盖。具体的，为了防止树脂膜层烘干中保持较佳的本身物理特性，所述烘干的温度可在60-120摄氏度，所述烘干的时间在1-5小时，形成SiO 2的第一覆盖层，在完成有机硅涂覆液烘干的情况下，可保持树脂膜层原本特性。其中，有机硅涂覆液由下述方法制备：正硅酸乙酯(TEOS)、水、氯化氢和乙醇的混合物在50-80摄氏度下回流得到硅溶液；将所述硅溶液溶于添加乳化剂的乙醇溶液制备有机硅涂覆液。乳化剂可采用泊洛沙姆(Poloxamer)等。具体的，涂覆工艺为旋涂玻璃工艺，上述的有机硅涂覆液作为有机硅旋涂液。 The coating process can use a coating liquid to coat the surface of the resin film layer. After the coating liquid coated on the surface of the resin film layer is naturally air-dried or dried, a first cover layer is formed on the surface of the resin film layer, so that Cover the table hole. In some preferred embodiments, the coating liquid may be a silicone coating liquid, a silicone coating liquid may be used to cover the surface of the resin film layer, and the silicone coating liquid covering the surface of the resin film layer may be dried. A first cover layer is formed after drying. Since the silicone coating liquid has a certain fluidity, the surface holes of the surface of the resin film layer can be covered well. Specifically, in order to prevent drying of the resin film layer is preferred to maintain the physical characteristics of itself, the drying temperature may be 60-120 ° C, the drying time is 1-5 hours, to form a first SiO 2 The cover layer can maintain the original characteristics of the resin film layer when the silicone coating liquid is dried. Wherein, the silicone coating liquid is prepared by the following method: a mixture of ethyl orthosilicate (TEOS), water, hydrogen chloride, and ethanol is refluxed at 50-80 degrees Celsius to obtain a silicon solution; the silicon solution is dissolved in an added emulsifier Of ethanol solution to prepare a silicone coating solution. As an emulsifier, Poloxamer can be used. Specifically, the coating process is a spin-on-glass process, and the above-mentioned silicone coating liquid is used as a silicone spin-coating liquid.
沉积工艺可以为原子层沉积工艺，其实施中，原子层沉积工艺的沉积温度50-150摄氏度，压力为10豪托-100托，沉积第二沉积层的厚度为10-100nm，沉积的无机材料为Al 2O 3或TiN或TiO 2等。 The deposition process can be an atomic layer deposition process. In the implementation, the deposition temperature of the atomic layer deposition process is 50-150 degrees Celsius, the pressure is 10 hato-100 torr, the thickness of the second deposited layer is 10-100 nm, and the deposited inorganic material It is Al 2 O 3 or TiN or TiO 2 .
本发明提供的实施例，一方面提高了薄膜整体的阻隔水汽性能，另一方面，涂覆工艺较原子层沉积工艺耗时短，成本低，可降低原子层沉积工艺需要沉积的膜层厚度，从而可以降低了整个制备薄膜的时间和成本。The embodiments provided by the present invention, on the one hand, improve the overall water vapor barrier performance of the thin film; on the other hand, the coating process takes less time and costs than the atomic layer deposition process, and can reduce the thickness of the film layer to be deposited by the atomic layer deposition process. This can reduce the time and cost of preparing the entire film.
本实施例提供的一种薄膜，先在树脂膜层的表面上设置第一覆盖层，使第 一覆盖层将树脂膜层的表面的表孔封盖，无机材料的第二覆盖层设置于第一覆盖层，由于树脂膜层的表面的表孔被封盖，无机材料的第二覆盖层的阻水效果较好，提高了薄膜的阻水性。In the film provided in this embodiment, a first covering layer is first provided on the surface of the resin film layer, so that the first covering layer covers the surface holes on the surface of the resin film layer, and the second covering layer of inorganic material is provided on the first In a cover layer, since the surface holes on the surface of the resin film layer are covered, the second cover layer of the inorganic material has a better water blocking effect, and the water resistance of the film is improved.
本发明的一个实施例提出的薄膜包括：树脂膜层、第一覆盖层以及无机材料的第二覆盖层。第一覆盖层封盖所述树脂膜层的表面的表孔，无机材料的第二覆盖层设置于所述第一覆盖层。The film according to an embodiment of the present invention includes a resin film layer, a first cover layer, and a second cover layer of an inorganic material. A first covering layer covers the surface holes of the surface of the resin film layer, and a second covering layer of an inorganic material is disposed on the first covering layer.
无机材料的第二覆盖层、第一覆盖层、树脂膜层依次叠加，第一覆盖层树脂膜层的表面的表孔被第一覆盖层封盖，现有技术中，由于原子层沉积法工艺的高保型性(高阶梯覆盖率)，该无机薄膜层并不能完全覆盖住树脂膜层本身的表孔，因而，最终表面改性树脂膜层的阻水性能并不好，相对于现有技术，本发明的实施例中，由于树脂膜层本身的表孔被第一覆盖层封盖，使得无机材料的第二覆盖层形成的无机薄膜层具备较好的阻水性能，薄膜的阻水性能较高。The second covering layer, the first covering layer, and the resin film layer of the inorganic material are sequentially stacked, and the surface holes on the surface of the resin film layer of the first covering layer are covered by the first covering layer. In the prior art, due to the atomic layer deposition process, High retention (high step coverage), the inorganic thin film layer cannot completely cover the surface pores of the resin film layer itself, therefore, the water-blocking performance of the final surface-modified resin film layer is not good, compared with the prior art In the embodiment of the present invention, since the surface holes of the resin film layer are covered by the first covering layer, the inorganic thin film layer formed by the second covering layer of the inorganic material has better water blocking performance, and the water blocking performance of the film Higher.
树脂膜层的材质为聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)或聚甲基丙烯酸甲酯(PMMA)或聚丙烯(PP)或聚酰胺(PA)或聚对苯二甲酸四次甲基酯(PBT)或聚酰亚胺(PI)或尼龙；所述第一覆盖层的材料为SiO 2等；所述无机材料为Al 2O 3或TiN或TiO 2。所述第一覆盖层的厚度在10-1000nm；所述第二覆盖层的厚度在10-100nm。其中，本实施例中的薄膜可采用上述实施例薄膜的制备方法制备而成。 The material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide ( PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon; the material of the first cover layer is SiO 2 or the like; the inorganic material is Al 2 O 3 or TiN or TiO 2 . The thickness of the first cover layer is 10-1000 nm; the thickness of the second cover layer is 10-100 nm. The thin film in this embodiment can be prepared by using the method for preparing the thin film in the above embodiment.
本发明的一个实施例提出的薄膜太阳能电池表面膜层包括：含氟膜以及薄膜。所述薄膜与所述含氟膜贴合。薄膜包括树脂膜层、第一覆盖层以及无机材料的第二覆盖层。第一覆盖层封盖所述树脂膜层的表面的表孔，无机材料的第二覆盖层设置于所述第一覆盖层。A surface film layer of a thin-film solar cell according to an embodiment of the present invention includes a fluorine-containing film and a thin film. The film is bonded to the fluorine-containing film. The film includes a resin film layer, a first cover layer, and a second cover layer of an inorganic material. A first covering layer covers the surface holes of the surface of the resin film layer, and a second covering layer of an inorganic material is disposed on the first covering layer.
其中，含氟膜主要具备透明、抗紫外、防潮、低介电常数、高击穿电压等特性。含氟膜以及薄膜之间可通过粘结剂黏连。具体地，含氟膜的材质为乙烯-四氟乙烯共聚物(ETFE)或聚氟乙烯(PVF)或聚偏二氟乙烯(PVDF)，但不限于此。树脂膜层的材质为聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)或聚甲基丙烯酸甲酯(PMMA)或聚丙烯(PP)或聚酰胺(PA)或聚对苯二甲酸四次甲基酯(PBT)或聚酰亚胺(PI)或尼龙；所述第一覆盖层的材料为SiO 2等；所述无机材料为Al 2O 3或TiN或TiO 2。所述第一覆盖层的 厚度在10-1000nm；所述第二覆盖层的厚度在10-100nm。其中，本实施例中的薄膜可采用上述实施例薄膜的制备方法制备而成。 Among them, the fluorine-containing film mainly has the characteristics of transparency, ultraviolet resistance, moisture resistance, low dielectric constant, and high breakdown voltage. The fluorine-containing film and the film can be bonded by an adhesive. Specifically, the material of the fluorine-containing film is ethylene-tetrafluoroethylene copolymer (ETFE), polyvinyl fluoride (PVF), or polyvinylidene fluoride (PVDF), but is not limited thereto. The material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide ( PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon; the material of the first cover layer is SiO 2 or the like; the inorganic material is Al 2 O 3 or TiN or TiO 2 . The thickness of the first cover layer is 10-1000 nm; the thickness of the second cover layer is 10-100 nm. The thin film in this embodiment can be prepared by using the method for preparing the thin film in the above embodiment.
图5为本发明提供的薄膜太阳能电池一实施例，请参阅图7，本发明的一个实施例提出的薄膜太阳能电池包括：薄膜太阳能电池表面膜层110、衬底层120以及光电转化层130，光电转化层130位于所述薄膜太阳能电池表面膜层110与所述衬底层120之间，薄膜太阳能电池表面膜层可采用上述实施例的薄膜太阳能电池表面膜层，本发明的实施例不再赘述。所述含氟膜111外露，薄膜112位于含氟膜111和光电转化层130之间。FIG. 5 is an embodiment of a thin-film solar cell provided by the present invention. Please refer to FIG. 7. A thin-film solar cell according to an embodiment of the present invention includes: a thin-film solar cell surface film layer 110, a substrate layer 120, and a photoelectric conversion layer 130. The conversion layer 130 is located between the thin-film solar cell surface film layer 110 and the substrate layer 120. The thin-film solar cell surface film layer can use the thin-film solar cell surface film layer of the above embodiment, which is not repeated in the embodiment of the present invention. The fluorine-containing film 111 is exposed, and the thin film 112 is located between the fluorine-containing film 111 and the photoelectric conversion layer 130.
衬底层可采用不锈钢或铝导电材料等，光电转化层可采用铜铟镓硒(CIGS)化合物材料或铜铟硒(CIS)或砷化镓(GaAS)或碲化镉(CdTe)或钙钛矿等，但不局限于此。The substrate layer can be made of stainless steel or aluminum conductive material, and the photoelectric conversion layer can be made of copper indium gallium selenium (CIGS) compound material or copper indium selenium (CIS) or gallium arsenide (GaAS) or cadmium telluride (CdTe) or perovskite Etc., but not limited to this.
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。In the above embodiments, the description of each embodiment has its own emphasis. For a part that is not described in detail in one embodiment, reference may be made to related descriptions in other embodiments.
可以理解的是，上述装置中的相关特征可以相互参考。另外，上述实施例中的“第一”、“第二”等是用于区分各实施例，而并不代表各实施例的优劣。It can be understood that related features in the above-mentioned device can be referred to each other. In addition, the “first”, “second”, and the like in the above embodiments are used to distinguish the embodiments, and do not represent the advantages and disadvantages of the embodiments.
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本发明的实施例可以在没有这些具体细节的情况下实践。在一些实例中，并未详细示出公知的结构和技术，以便不模糊对本说明书的理解。In the description provided here, numerous specific details are explained. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known structures and techniques have not been shown in detail so as not to obscure the understanding of the specification.
类似地，应当理解，为了精简本公开并帮助理解各个发明方面中的一个或多个，在上面对本发明的示例性实施例的描述中，本发明的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的装置解释成反映如下意图：即所要求保护的本发明要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，发明方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本发明的单独实施例。Similarly, it should be understood that, in order to streamline the present disclosure and help understand one or more of the various aspects of the invention, in the above description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together into a single embodiment, Figure, or description of it. However, this disclosed device should not be construed to reflect the intention that the claimed invention requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single embodiment previously disclosed. Thus, the claims that follow a specific embodiment are hereby explicitly incorporated into this specific embodiment, where each claim itself serves as a separate embodiment of the invention.
本领域那些技术人员可以理解，可以对实施例中的装置中的部件进行自适应性地改变并且把它们设置在与该实施例不同的一个或多个装置中。可以把实施例中的部件组合成一个部件，以及此外可以把它们分成多个子部件。除了这样的特征中的至少一些是相互排斥之外，可以采用任何组合对本说明书(包括 伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何装置的所有部件进行组合。除非另外明确陈述，本说明书(包括伴随的权利要求、摘要和附图)中公开的每个特征可以由提供相同、等同或相似目的替代特征来代替。Those skilled in the art can understand that the components in the device in the embodiment can be adaptively changed and set in one or more devices different from the embodiment. The components in the embodiment can be combined into one component, and furthermore, they can be divided into a plurality of sub-components. With the exception of at least some of such features being mutually exclusive, all features disclosed in this specification (including the accompanying claims, abstract, and drawings), and all components of any device so disclosed may be combined in any combination. Each feature disclosed in this specification (including the accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
此外，本领域的技术人员能够理解，尽管在此所述的一些实施例包括其它实施例中所包括的某些特征而不是其它特征，但是不同实施例的特征的组合意味着处于本发明的范围之内并且形成不同的实施例。例如，在下面的权利要求书中，所要求保护的实施例的任意之一都可以以任意的组合方式来使用。本发明的各个部件实施例可以以硬件实现，或者以它们的组合实现。In addition, those skilled in the art can understand that although some embodiments described herein include some features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present invention Within and form different embodiments. For example, in the following claims, any one of the claimed embodiments can be used in any combination. The various component embodiments of the present invention may be implemented in hardware, or a combination thereof.
应该注意的是上述实施例对本发明进行说明而不是对本发明进行限制，并且本领域技术人员在不脱离所附权利要求的范围的情况下可设计出替换实施例。在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的部件或组件。位于部件或组件之前的单词“一”或“一个”不排除存在多个这样的部件或组件。本发明可以借助于包括有若干不同部件的装置来实现。在列举了若干部件的权利要求中，这些部件中的若干个可以是通过同一个部件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。It should be noted that the above-mentioned embodiments illustrate the invention rather than limit the invention, and that those skilled in the art may design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of parts or components not listed in a claim. The word "a" or "an" preceding a part or component does not exclude the presence of a plurality of such parts or components. The invention can be implemented by means of a device comprising several different components. In the claims listing several components, several of these components may be embodied by the same component item. The use of the words first, second, and third does not imply any order. These words can be interpreted as names.
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Any simple modifications, equivalent changes, and modifications made to the above embodiments in accordance with the technical essence of the present invention still belong to the present invention. Within the scope of the technical solution of the invention.

Claims (10)

  1. 一种薄膜的制备方法，其特征在于，包括：A method for preparing a thin film, comprising:
    采用涂覆工艺在树脂膜层的表面上形成第一覆盖层，使第一覆盖层将树脂膜层的表面的表孔封盖；Forming a first covering layer on the surface of the resin film layer by a coating process, so that the first covering layer covers the surface holes of the surface of the resin film layer;
    采用沉积工艺在所述第一覆盖层上形成无机材料的第二覆盖层。A second covering layer of an inorganic material is formed on the first covering layer by a deposition process.
  2. 根据权利要求1所述的制备方法，其特征在于，The preparation method according to claim 1, wherein:
    采用有机硅涂覆液覆盖所述树脂膜层的表面，对覆盖所述树脂膜层的表面的有机硅涂覆液烘干后形成第一覆盖层。The surface of the resin film layer is covered with a silicone coating liquid, and the silicone coating liquid covering the surface of the resin film layer is dried to form a first cover layer.
  3. 根据权利要求2所述的制备方法，其特征在于，The preparation method according to claim 2, characterized in that:
    所述有机硅涂覆液由下述方法制备：The silicone coating liquid is prepared by the following method:
    正硅酸乙酯TEOS、水、氯化氢和乙醇的混合物在50-80摄氏度下回流得到硅溶液；A mixture of TEOS, water, hydrogen chloride and ethanol was refluxed at 50-80 degrees Celsius to obtain a silicon solution;
    将所述硅溶液溶于添加乳化剂的乙醇溶液制备有机硅涂覆液。The silicon solution is dissolved in an ethanol solution to which an emulsifier is added to prepare a silicone coating solution.
  4. 根据权利要求2所述的制备方法，其特征在于，The preparation method according to claim 2, characterized in that:
    所述烘干的温度在60-120摄氏度，所述烘干的时间在1-5小时。The drying temperature is 60-120 degrees Celsius, and the drying time is 1-5 hours.
  5. 根据权利要求1-4中任一所述的制备方法，其特征在于，The preparation method according to any one of claims 1-4, characterized in that:
    所述涂覆工艺为旋涂玻璃SOG工艺；The coating process is a spin-on-glass SOG process;
    所述沉积工艺为原子层沉积ALD工艺。The deposition process is an atomic layer deposition ALD process.
  6. 根据权利要求1-4中任一所述的制备方法，其特征在于，The preparation method according to any one of claims 1-4, characterized in that:
    所述树脂膜层的材质为聚对苯二甲酸乙二醇酯PET或聚萘二甲酸乙二醇酯PEN或聚甲基丙烯酸甲酯PMMA或聚丙烯PP或聚酰胺PA或聚对苯二甲酸四次甲基酯PBT或聚酰亚胺PI或尼龙；The material of the resin film layer is polyethylene terephthalate PET or polyethylene naphthalate PEN or polymethyl methacrylate PMMA or polypropylene PP or polyamide PA or polyethylene terephthalate. Tetramethylene ester PBT or polyimide PI or nylon;
    所述第二覆盖层的无机材料为Al 2O 3或TiN或TiO 2。 The inorganic material of the second cover layer is Al 2 O 3 or TiN or TiO 2 .
  7. 一种薄膜，其特征在于，包括：A thin film comprising:
    树脂膜层；Resin film
    第一覆盖层，封盖所述树脂膜层的表面的表孔；A first covering layer covering a surface hole on a surface of the resin film layer;
    无机材料的第二覆盖层，设置于所述第一覆盖层。A second covering layer of an inorganic material is disposed on the first covering layer.
  8. 根据权利要求7所述的薄膜，其特征在于，The film according to claim 7, wherein:
    所述薄膜采用上述权利要求1-6中任一所述的方法制备；The film is prepared by the method according to any one of claims 1-6;
    所述第一覆盖层的厚度在10-1000nm；The thickness of the first covering layer is 10-1000 nm;
    所述第二覆盖层的厚度在10-100nm。The thickness of the second cover layer is 10-100 nm.
  9. 一种薄膜太阳能电池表面膜层，其特征在于，包括：A thin-film solar cell surface film layer is characterized in that it includes:
    含氟膜，含氟膜的材质为乙烯-四氟乙烯共聚物ETFE或聚氟乙烯PVF或聚偏二氟乙烯PVDF；Fluorine-containing film, the material of the fluorine-containing film is ethylene-tetrafluoroethylene copolymer ETFE or polyvinyl fluoride PVF or polyvinylidene fluoride PVDF;
    薄膜，所述薄膜采用上述权利要求7-8中任一所述的薄膜，所述薄膜与所述含氟膜贴合。A film, wherein the film is any one of claims 7-8, and the film is bonded to the fluorine-containing film.
  10. 一种薄膜太阳能电池，其特征在于，包括：A thin-film solar cell, comprising:
    权利要求9所述的薄膜太阳能电池表面膜层；The thin film solar cell surface film according to claim 9;
    衬底层；Substrate layer
    电池核心层，位于所述薄膜太阳能电池表面膜层与所述衬底层之间，所述含氟膜外露。The battery core layer is located between the surface film layer of the thin-film solar cell and the substrate layer, and the fluorine-containing film is exposed.
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