WO2019240719A1

WO2019240719A1 - Thermoelectric cooling element

Info

Publication number: WO2019240719A1
Application number: PCT/UA2018/000083
Authority: WO
Inventors: Андрей Дмитриевич ХВОРОСТЯНЫЙ; Виталий ГЕНЗЕЛЬ; Александр Валерьевич МЯГКИЙ
Original assignee: Андрей Дмитриевич ХВОРОСТЯНЫЙ
Priority date: 2018-06-13
Filing date: 2018-07-30
Publication date: 2019-12-19
Also published as: UA119220C2

Abstract

The invention relates to thermoelectric cooling elements and can be used for cooling electronic devices such as, for example, a central processor or a power supply unit of a personal computer, and can also be used as a cooling element in refrigerators, including portable refrigerators, and other devices. The present thermoelectric cooling element includes an n-type semiconductor and a p-type semiconductor, wherein the n-type semiconductor and the p-type semiconductor are graded band-gap semiconductors, wherein a wide band-gap side N of the n-type semiconductor is connected to a narrow band-gap side p of the p-type semiconductor, and terminals are fastened to a wide band-gap side P and a narrow band-gap side n of the p-type and n-type graded band-gap semiconductors, respectively. The technical result consists in increasing efficiency and ease of manufacture, providing self-cooling of thermoelectric cooling element parts that heat up, preventing said parts from overheating, maintaining safety for a device being cooled, eliminating the need to cool said device using an external source, expanding functionality, simplifying structural design, and reducing production costs.

Description

COOLING THERMOELECTRIC ELEMENT

The invention relates to thermoelectric cooling elements, and can be used to cool electronic devices, such as a central processor or personal computer power supply, and can also be used as a cooling element in refrigerators, including portable ones, and other devices.

Known cooling thermoelectric element containing branches of p- and n-types of conductivity, which are located between the electrically conductive switching plate and the collectors for connection with the outer circle, which is characterized in that it contains at least one of the free surfaces of each of the branches of at least two jumper wires between them (patent UA 34670 U, МГЖ H01L 35/02, published August 20, 2008, bull. 16).

The disadvantages of the known analogue are unreliability, low manufacturability, danger of use, limited functionality due to the implementation of at least two electrical jumpers on the free surfaces of the branches. Despite the enhancement of the cooling effect, which is achieved by the indicated structural elements of the known analogue due to an increase in the current flowing through the branches of the semiconductor elements, a temperature difference naturally occurs between the part of the branches of the semiconductor elements, which is cooled, and the part of the branches of the semiconductor elements, which is heated . Thus, the heating that occurs as a result of the Peltier effect is also enhanced, which makes the known analogue unreliable, especially when used for cooling microelectronic equipment and computer equipment, and dangerous to use without complex construction, large in size and costly means for cooling part of the branches of semiconductor elements, which is heated. In turn, the large overall dimensions of the known analogue with the above-mentioned means for cooling, which must be used to reduce the negative effect of heating the corresponding part of the branches of semiconductor elements on the cooled object, the complexity of its design and the danger of use, determine its limited functionality and narrow its scope.

In addition, the implementation of many electrical jumpers made of copper foil with an anti-diffusion layer of nickel on its surface, attaching electrical jumpers to the free surfaces of the branches of semiconductor elements are complex and costly procedures that reduce the manufacturability of the known analogue and complicate its design and production. In addition, the electrical jumpers of the known analogue are easily destroyed due to mechanical damage or the action of a temperature difference, which also makes the known analogue unreliable.

Also known is a thermoelectric element with at least one thermocouple and one pn junction, the thermocouple containing a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient, while the first material selectively contacts the p- region through the conductor n of the junction, and the second material through the conductor selectively contacts the p-region of the pn junction (patent RU 2419919 C2, IPC H01L 35/02, published January 10, 2010, bull. Ne 1).

The disadvantages of the known analogue are its unreliability, low manufacturability, danger of use, limited functionality, due to the implementation of the structural elements of the known analogue, in particular, the actual presence of a diode in its design. Despite the advantages that the design of the known analogue of the diode gives, in particular, an increase in the efficiency, a similar structural element has several disadvantages, primarily the fact that the pn junction in the diode has an electric capacitance, which has a stray character, slowing down the passage of current through the diode and slowing down the cooling and heating processes in the known analogue as a whole. In addition, diodes are generally designed for certain characteristics of current and voltage in the circuit, beyond which they function incorrectly, leading to damage and incorrect operation of the devices of which they are structural elements. All this limits the scope of application of the known analogue, makes it unreliable, and its use is dangerous.

In addition, in the design of the known analogue there are no devices that would provide sufficiently effective cooling of the heated part of the known analogue. As in the previous analogue, the amplification of the current and the enhancement of cooling and heating of materials in the thermocouple make them overheat or overheat, which necessitates the use of complex in construction, large in size and costly means for cooling the heated part of the known analogue.

However, the known analogue has a complex structure, which requires the cost of complex operations for the manufacture of structurally complex structural elements of a known analogue, in particular, an element acting as a diode, and their connection with each other and with cooling means, which indicates the low manufacturability of the known analogue.

An electronic cooling element is also known, including two separated electrodes, an n-type semiconductor and a p-type semiconductor, each of which is placed on one of two divided electrodes, a bridge electrode for connecting an n-type semiconductor and a p-type semiconductor, in which an n-type semiconductor causes a cooling process inside the bridge electrode when current flows from it in the direction of the p-type semiconductor, while the n-type semiconductor contains a complex oxide containing strontium and titanium as the main ovine components, and a high-temperature oxidizing agent (patent JPH 05198847 A, IPC H01L 35/14, H01L 35/32, published on 08/06/1993). The disadvantages of this analogue are low efficiency, unreliability, low manufacturability, danger of use, limited functionality, due to the design of the components of the known analogue. In the known analogue, the construction of components classic for the prior art is used, which provides, in particular, the connection of one side of semiconductors that are cooled due to the action of the Peltier effect, a bridge electrode and the connection of parts of semiconductors that are heated due to the action of the Peltier effect, with separated electrodes. At the same time, as in previous analogues, such a design of structural elements of the known analogue necessitates the use of complex, large-sized means, for example, radiators, for cooling parts of semiconductors that are constantly heated and overheated, to prevent damage to the cooling element and device in which it is installed. The existing need to connect such means with a known analogue and to install together with it in devices requiring cooling indicates a low technological effectiveness and limited functionality of the known analogue, given the need to reduce the size of cooling elements without losing their effectiveness.

The absence of additional cooling means can lead to overheating of the cooling element and the damage to the cooling element indicated above with the device in which it is installed, which makes the known analogue unreliable, and its use is dangerous without additional costs for cooling means for parts of semiconductors that are heated due to the Peltier effect .

In addition, the materials used in the known analog as semiconductors cannot, as such, provide a high efficiency, since strontium titanate and similar posistors are close in their properties to dielectrics and acquire signs semiconductors only on condition that they are alloyed with extraneous chemical elements, for example, rare earth metals. The production of such materials is excessively costly, which also indicates the low manufacturability of the known analogue.

The closest analogue of the claimed invention is a thermoelectric element formed by installing a conductor element between an n-type semiconductor and a p-type semiconductor and configured to provide a temperature gradient between an n-type semiconductor and a p-type semiconductor and generating electromotive force (patent JP 2002280620 A, IPC H01L 23/38, H01L 35/14, H01L 35/32, published September 27, 2002).

The disadvantages of the closest analogue are low efficiency, unreliability, low manufacturability, danger of use, limited functionality due to the design and interconnection of the components of the closest analogue and due to the design need to cool parts of semiconductors that are heated due to the action of the Peltier effect.

As in previous analogues, the closest analogue does not solve the problem of cooling the heated parts of semiconductors that overheat due to the amplification of the current passing through the thermoelectric element, in this case, due to the creation of a temperature gradient and electromotive force between dissimilar materials at the ends of the thermoelectric element. When heat absorption is enhanced, the contact point of two semiconductors intensifies heat generation by the opposite ends of the semiconductor elements, as a result of which they are excessively heated or overheated, there is the possibility of damage to the thermoelectric element and the device that is cooled by it, which makes the closest analogue unreliable, and its use is dangerous for the device, which is cooled by it. At the same time, the need for cooling the heated parts of the thermoelectric element causes the use of complex in construction and large-sized means for cooling, limits the functionality of the closest analogue, narrows its scope and creates obstacles in its installation, for example, in the limited space between the components of the computer system unit. Without special means for cooling the heated parts of the thermoelectric element, the term of use of the closest analogue is limited, and the likelihood of damage to the terminals connected to the thermoelectric element increases.

In addition, the homogeneity of the semiconductors, which includes the closest analogue, does not provide the high efficiency required for efficient cooling of devices that heat up to high temperatures during their operation, and leads to excessive energy costs for the functioning of the closest analogue. At the same time, the need to use metal conductors, one of which is installed between the semiconductors, and the other at their opposite ends, to ensure their connection with the semiconductors, and the need to use means to provide a temperature gradient between the n-type semiconductor and the p-type semiconductor by maintaining temperature differences at opposite ends of the thermoelectric element unnecessarily complicates the design, the use of the closest analogue and indicates its low technology personalities.

The technical task of the claimed invention is the creation of an effective cooling thermoelectric element, which is characterized by an increased efficiency, high manufacturability, safety with safety for the refrigerated device, expanded functionality, self-cooling of the parts of the cooling element, except for overheating and excluding the need for their cooling by an external source of low temperature, while simplifying the design and reducing the cost of production.

The solution of the technical problem is achieved by the fact that in the claimed cooling thermoelectric element, which includes an n-type semiconductor, a p-type semiconductor, according to the proposal, the n-type semiconductor and the p-type semiconductor are graded-gap, while the wide-gap side N of the n-type semiconductor connected to the narrow-gap side p of the p-type semiconductor, and attached to the output to the wide-gap side P and the narrow-gap side p of the variable-gap semiconductors of p-type and n-type, respectively.

Also, according to the proposal, each of the graded-gap semiconductors is a film.

In addition, according to the proposal, graded-gap semiconductors contain silicon and germanium.

However, according to the proposal, pentavalent phosphorus is the donor impurity in the n-type graded-gap semiconductor, and trivalent boron is the acceptor impurity in the p-type graded-gap semiconductor.

In addition, according to the proposal, graded-gap semiconductors are coated with a film of dielectric material.

Also, according to the proposal, a plate of dielectric material is attached to the side surfaces of the connected parts of the graded-gap semiconductors.

In addition, according to the proposal, the cooling thermoelectric element is made with the possibility of connection with other identical cooling thermoelectric elements with the creation of the battery.

In addition, according to the proposal, the cooling thermoelectric element is configured to connect to the surface of the object that is being cooled.

At the same time, according to the proposal, the concentration of the donor impurity in the n-type graded-gap semiconductor gradually decreases from the narrow-gap side n to the wide-gap side N, and the concentration of the acceptor impurity in the p-type graded-gap semiconductor gradually increases from the narrow-gap side p to the wide-gap side P.

The technical result of the claimed invention is to increase the efficiency, manufacturability, providing self-cooling of the heating parts of the cooling thermoelectric element, eliminating overheating of these parts, ensuring safety for the device to be cooled, eliminating the need for its cooling by an external source of low temperature, expanding functionality, simplifying the design and reducing the cost of production.

A causal relationship between the essential features of the invention and the expected technical result is as follows.

Together with the essential features of the claimed invention, it is possible to increase the efficiency, manufacturability, self-cooling of the heating parts of the cooling thermoelectric element, eliminating overheating of these parts, safety for the device to be cooled, eliminating the need for its cooling by an external source of low temperature, expanding functionality, simplifying the design and reducing the cost of production due to the use in the design of the claimed cooling thermoelectric about an element of graded-gap semiconductors and the occurrence of effects when they are claimed to combine, enhancing the cooling effect in graded-gap semiconductors and eliminating the need for cooling of the parts of the element that are heated due to the action of the Peltier effect.

The implementation of the claimed cooling thermoelectric element with n-type and p-type semiconductors in such a way that the wide-gap side N of the n-type semiconductor is connected to the narrow-gap side p of the p-type semiconductor increases the efficiency, since the claimed connection of the graded-gap semiconductors allows significant cooling variable gap semiconductors with minimal energy consumption from an external source due to effects arising from the transmission of electric current through graded-gap semiconductors. The implementation of the claimed cooling thermoelectric element with graded-gap semiconductors of n-type and p-type increases its manufacturability, provides self-cooling of the heating parts, eliminates overheating of these parts, safety for the device that is being cooled, eliminates the need for cooling of the claimed thermoelectric element by an external source of low temperature, expansion of functionality also due to thermoelectric effects arising in inhomogeneously heated graded-gap semiconductors.

Due to the implementation of the p-type semiconductor with a graded-gap semiconductor, that is, from chemical elements or their compounds having an unequal band gap, the p-type semiconductor has a wide-gap side P that contains a chemical element or compound having a large forbidden band, and a narrow-gap side p , which contains a chemical element or compound having a band gap less than the width of the corresponding material of the wide-gap side P. Moreover, due to the graded-gap nature of the p-type semiconductor Irina bandgap gradually decreases with a gradual change in the chemical composition of the semiconductor in the same direction from the wide side to the narrow-band side P p. Accordingly, the electron energy in the valence band of the wide-band side P is less than the electron energy in the valence band of the narrow-band side p. This embodiment of the p-type semiconductor allows, when passing an electric current through it from an external source and the action of the corresponding electric field arising from such a transmission, to transfer electrons from the wide-band side P to the narrow-band side p with the absorption of phonon vibrational energy of the p-semiconductor crystal lattice. Thus, the graded-gap p-semiconductor is cooled. To pass through the pn junction at the point of contact of the graded-gap semiconductors, the electrons of the graded-gap p-semiconductor absorb the energy of phonon vibrations of the crystal lattice and use the energy of an electric current from an external source. In this case, the Peltier effect occurs at the contact point of the graded-gap semiconductors, which transfers heat from the contact point of the graded-gap semiconductors, which cools and absorbs heat, to their opposite ends, which are heated. In this case, the contact point of the graded-gap semiconductors absorbs the energy of phonon vibrations of the crystal lattice, which enhances the cooling effect.

As a result of the Peltier effect, the contact point of the graded-gap semiconductors absorbs heat and cools, and the opposite ends of the graded-gap semiconductors are heated accordingly, which creates a temperature gradient in both graded-gap semiconductors and creates a concentration gradient of charge carriers between wide and narrow bands in graded-gap semiconductors. The concentration gradient of charge carriers, in turn, leads to the disappearance of the electroneutrality of graded-gap semiconductors, separation of charges, the appearance of a diffusion flux of charge carriers from the less heated part of the graded-gap semiconductor to the warmer one and creates a volume electric field that prevents separation of charges. In the claimed cooling thermoelectric element, when an electric current is passed from an external source through graded-gap semiconductors, the indicated volume electric field moves charges to form and maintain current. The volumetric electric field of charge transfer is carried out due to the absorption of thermal energy of graded-gap semiconductors, namely, the energy of phonon vibrations of the crystal lattice, which, in turn, cools the heated parts of graded-gap semiconductors and prevents their overheating.

Thus, the thermoelectric effects arising in both graded-gap semiconductors when an electric current is passed through them from an external source eliminate the need for cooling their heated parts using any means intended for this and provides self-cooling of these parts. Accordingly, the lack of need to connect the claimed cooling thermoelectric element with complex in design and large in size cooling means allows to increase its manufacturability, simplify the design and reduce the cost of its production. However, the lack of need to connect the claimed cooling thermoelectric element with complex in design and large-sized cooling means allows to reduce its size and expand its functionality, because due to the small size and lack of heating the claimed cooling thermoelectric element can be placed in many devices, the cooling of which using well-known analogues is impossible. In addition, the claimed cooling element due to the lack of need for its cooling allows to avoid energy costs for the operation of cooling means, which makes it more effective than known analogues.

Attaching the terminals to the wide-gap side P and the narrow-gap side of the p-type and n-type graded-gap semiconductors is necessary to connect the claimed cooling thermoelectric element to an external current source, without which the functioning of the claimed cooling thermoelectric element is impossible. An external current source generates an electric current, which, passing from the n-type graded-gap semiconductor to the p-type graded-gap semiconductor, causes the Peltier effect and the Thomson effect in the claimed cooling element.

The implementation of each of the graded-gap semiconductors in the form of films allows you to minimize the size of the claimed cooling thermoelectric element, expanding its functionality, as well as increasing the efficiency of the declared cooling element when performing films with a thickness less than the average mean free path of electrons in graded-gap semiconductors, which reduces the probability of recombination of charge carriers and, accordingly, reduces heat generation as a result of this recombination, which contributes to the cooling of the claimed cooling thermoelectric element.

The implementation of graded-gap semiconductors made of silicon and germanium simplifies and reduces the cost of production of graded-gap semiconductors for the claimed cooling element, since these chemical elements are not rare, have a low cost and can be combined into a graded-gap semiconductor without the use of sophisticated equipment, high energy, labor and time costs with using well-known methods. At the same time, silicon and germanium have the difference in the band gap necessary for the effective operation of the claimed cooling element, and are also easily doped with acceptor and donor impurities. In this case, silicon and germanium are not highly toxic chemical elements, which makes the graded-gap semiconductors made from them safe for the user of the claimed cooling element and the environment.

The use of n-type pentavalent phosphorus in a graded-gap semiconductor as a donor impurity, and the use of p-type trivalent boron in a graded-gap semiconductor as an acceptor impurity simplifies and cheapens the production of the claimed cooling element in graded-gap semiconductors, since these chemical elements are not rare, have little cost and can be alloyed into the crystal lattice of graded-gap semiconductors without the use of sophisticated equipment, large expenditures of energy, labor and time with Strongly well-known methods. At the same time, pentavalent phosphorus and trivalent boron as the corresponding impurities in the composition of graded-gap semiconductors can create the necessary for efficient operation the claimed cooling thermoelectric element the concentration of the main and minority charge carriers.

The implementation of the claimed cooling element with graded-gap semiconductors coated with a film of dielectric material allows to isolate the cooled object from the undesirable effects of electric current and electric fields of the claimed cooling element, as well as to eliminate the negative environmental impact on the claimed cooling thermoelectric element, for example, due to atmospheric moisture, increase or lowering air temperature, and the like.

The implementation of the claimed cooling element with the ability to connect with the surface of the cooled object expands the functionality of the specified element and increases the convenience of its use, since it allows not to use additional means or operations for installing the claimed cooling thermoelectric element in any way on the internal or external surface of the object and for fixing it in installed position. A plate of dielectric material attached to the side surfaces of the connected parts of the graded-gap semiconductors also allows you to isolate the cooled object from the unwanted effects of electric current and electric fields of the claimed cooling element.

The implementation of the claimed cooling thermoelectric element with the possibility of connection with other identical cooling thermoelectric elements makes it possible to form a combination of cooling thermoelectric elements that cool the object more than one specified element, while such a set of cooling elements uses one external current source. The connection of the claimed cooling thermoelectric element with other identical cooling thermoelectric elements expands its functionality, allowing you to cool objects that are characterized by a very intense heat or large overall dimensions.

The implementation of the graded-gap semiconductors of the claimed cooling thermoelectric element so that the concentration of donor impurities in the graded-gap semiconductor of n-type is gradually reduced from the narrow-band side p to the wide-gap side N, and the concentration of the acceptor impurity in the graded-gap semiconductor p-type is gradually increased from the narrow-band side p to the wide-band side P allows you to increase the volume charges arising in semiconductors when the Fermi level is aligned, which, in turn, allows you to enhance cooling ayuschee effect thermoelectric effects arising as a result of the inventive device.

The design of the claimed cooling thermoelectric element is explained using the following images:

FIG. 1 - Schematic illustration of a cooling thermoelectric element.

FIG. 2 - Image of the claimed cooling thermoelectric element in the embodiment with films that are graded-gap semiconductors.

FIG. 3 - Image of the claimed cooling thermoelectric element in the embodiment with a plate of dielectric material attached to the side surface of the connected parts of the graded-gap semiconductors.

The following conventions are used in the images:

- direction of current from an external current source

N is the wide-gap side of the n-type graded-gap semiconductor, consisting of silicon with a donor impurity in the form of pentavalent phosphorus in the embodiment; n is the narrow-gap side of the n-type graded-gap semiconductor, consisting of germanium with a donor impurity in the form of pentavalent phosphorus in the embodiment.

P is the wide-gap side of the graded-gap p-type semiconductor, consisting of silicon with an acceptor impurity in the form of a trivalent boron in the embodiment;

p is the narrow-gap side of the graded-gap p-type semiconductor, consisting of germanium with an acceptor impurity in the form of a trivalent boron in the embodiment;

In FIG. 1 shows one of the possible, but not exclusive, embodiment of the claimed cooling thermoelectric element, which includes graded-gap semiconductors 1 and terminals 2. In the illustrated embodiment, the terminals 2 are connected to the ends of the graded-gap semiconductors 1 using metal contacts 3, and the other ends of the terminals 2 are connected to an external power source 4.

The graded-gap semiconductors 1, i.e., the graded-gap p-type semiconductor and the graded-gap p-type semiconductor, are connected in such a way that the wide-gap side N of the n-type semiconductor is connected to the narrow-gap side p of the p-type semiconductor. The graded-gap semiconductors 1 may abut against each other and be connected by soldering, by mechanical means, or in another way, or may be spaced apart from each other and be connected by contact. The contact point 5 of the graded-gap semiconductors 1 is an anisotypic n-p heterojunction.

In a preferred embodiment, each of the graded-gap semiconductors 1 consists of a wide-band side consisting of silicon, a narrow-band side consisting of germanium, and an intermediate zone between them with a mixed chemical composition, in which the germanium content gradually decreases and the silicon content increases towards the wide-band side . However, graded-gap semiconductors 1 can be made of any semiconductor materials that have different band gap and can be combined in a graded-gap semiconductor, taking into account the above conditions. Also, in the preferred embodiment, the acceptor impurity for the p-type graded-gap semiconductor is trivalent boron, and pentavalent phosphorus is the donor impurity for the p-type semiconductor, which are the preferred impurities for graded-gap semiconductors 1 consisting of silicon and germanium. However, other similar materials can be used as acceptor and donor impurities in accordance with the semiconductor materials of which the graded-gap semiconductors 1 consist.

In the depicted embodiment (Fig. 1, 3) of the claimed invention, the graded-gap semiconductors 1 are parallelepipeds with connected ends. At the same time, graded-gap semiconductors 1 can be made in the form of films (Fig. 2) and, accordingly, connected in the horizontal plane. The thickness of such films, in their preferred embodiment, is less than the mean free path of electrons in graded-gap semiconductors. The graded-gap semiconductors 1 can be produced by liquid phase epitaxy, ion-beam epitaxy or diffusion. In addition, the graded-gap semiconductors 1 can be made with means that provide the ability to connect the claimed cooling thermoelectric element with the external or internal surface of the cooled object.

Two terminals 2 are attached to the wide-gap side P and the narrow-gap side n of the graded-gap semiconductors 1 of p-type and n-type, respectively, using metal contacts 3. The metal contacts 3 in the depicted embodiment of the claimed invention are plates made of a material that has pronounced properties of conductors, for example, from copper.

The external current source 4 can be any DC generator that produces a constant current sufficient to provide maintaining the cooling effect at the contact point of 5 graded-gap semiconductors 1.

A plate of dielectric material 6 can be attached to the lateral surfaces of the connected parts of the graded-gap semiconductors 1.

The claimed cooling thermoelectric element is used as follows.

The claimed cooling thermoelectric element is connected to the outer surface of the device requiring cooling, or connected to the inner surface of the specified device to cool its internal space, for example, if the claimed cooling thermoelectric element is an integral element of a refrigerator or other similar device. An external current source 4 is turned on. An electric current passes through both graded-gap semiconductors 1 from the wide-gap side P of the graded-gap p-semiconductor to the narrow-gap side p of the graded-gap p-semiconductor.

When an electric current is passed through a p-type variable gap semiconductor 1, electron transfer occurs from the wide-gap side P to the narrow-gap side p with the absorption of phonon vibrational energy of the p-semiconductor crystal lattice. Thus, the graded-gap p-semiconductor is cooled. After this, the electrons overcome the contact point of 5 graded-gap semiconductors, which is an anisotypic pn heterojunction. Accordingly, in the graded-gap semiconductors 1, the Peltier effect acts, which cools the contact point of 5 graded-gap semiconductors 1 and transfers heat energy from the contact point of 5 graded-gap semiconductors 1 to their opposite ends.

After that, the Thomson effect arises in unevenly heated graded-gap semiconductors 1, due to which the temperature gradient formed in graded-gap semiconductors 1 bulk electric fields carry out work on the transfer of charges arising in graded-gap semiconductors 1 due to the violation of their electroneutrality due to the absorption of thermal energy of graded-gap semiconductors 1, namely, due to the energy of phonon vibrations of the crystal lattice.

Thus, the claimed cooling thermoelectric element cools the device on which or in which it is installed, and does not require cooling by any means. The design of the claimed cooling thermoelectric element, the cooling of the heated parts of the claimed cooling thermoelectric element enhance the Peltier effect at the contact point of 5 graded-gap semiconductors 1, allowing to obtain a significant decrease in temperature and without spending an excessive amount of energy, materials to create and space for placement of cooling means which are not necessary for the claimed cooling element.

If it becomes necessary to turn off the declared cooling element, it is enough to turn off the external current source 4 or open the circuit by disconnecting any of the terminals 2 or metal contacts 3 from the graded-gap semiconductors 1.

Thus, the claimed cooling thermoelectric element is simple to manufacture and use, does not require excessive energy consumption for operation, well cools any devices that require cooling, and has high efficiency and small size, which allows it to be used in many areas where the reduction in size has essential, for example, in modern small-sized computing devices. At the same time, a simple design, manufacturability, the ability to combine and increase power make the claimed cooling thermoelectric element a good alternative to existing analogues. The existing sources of patent and scientific and technical information have not identified a cooling thermoelectric element that has the claimed combination of essential features, therefore, the presented technical solution meets the criterion of "novelty."

A comparative analysis of the above technical solution with the closest analogue showed that the implementation of the set of essential features characterizing the proposed invention leads to the appearance of qualitatively new technical properties mentioned above, the combination of which has not been established previously from the existing prior art, which allows us to conclude that the proposed technical solutions to the criterion of "inventive step".

The proposed technical solution is industrially applicable, since it does not contain any structural elements or materials that cannot be reproduced at the present stage of development of technology in industrial production.

Claims

FORMULA

1. A cooling thermoelectric element comprising an n-type semiconductor and a p-type semiconductor, characterized in that the n-type semiconductor and the p-type semiconductor are graded-gap, while the wide-gap side N of the n-type semiconductor is connected to the narrow-gap side p of the semiconductor p -type, and to the wide-gap side of P and narrow-gap side of n graded-gap semiconductors of p-type and n-type, respectively, is attached to the output.

2. The cooling thermoelectric element according to claim 1, characterized in that each of the graded-gap semiconductors is a film.

3. The cooling thermoelectric element according to claim 1, characterized in that the graded-gap semiconductors contain silicon and germanium.

4. The cooling thermoelectric element according to claim 1, characterized in that the donor impurity in the p-type varizon semiconductor is pentavalent phosphorus, and the acceptor impurity in the p-type varizon semiconductor is trivalent boron.

5. The cooling thermoelectric element according to claim 1, characterized in that the graded-gap semiconductors are coated with a film of a dielectric material.

6. The cooling thermoelectric element according to claim 1, characterized in that a plate of dielectric material is attached to the side surfaces of the connected parts of the graded-gap semiconductors.

7. The cooling thermoelectric element according to claim 1, characterized in that it is configured to connect with other identical cooling thermoelectric elements to form a battery.

8. The cooling thermoelectric element according to claim 1, characterized in that it is made with the possibility of connection with the surface of the object, which is cooled.

9. The cooling thermoelectric element according to claim 1, characterized in that the concentration of the donor impurity in the n-type graded-gap semiconductor gradually decreases from the narrow-gap side n to the wide-gap side N, and the acceptor impurity concentration in the p-type graded-gap semiconductor gradually increases from the narrow-gap side p to the wide-sided side of R.