WO2019229130A3 - Multi-resistive switching polyoxovanadates - Google Patents

Multi-resistive switching polyoxovanadates Download PDF

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Publication number
WO2019229130A3
WO2019229130A3 PCT/EP2019/063978 EP2019063978W WO2019229130A3 WO 2019229130 A3 WO2019229130 A3 WO 2019229130A3 EP 2019063978 W EP2019063978 W EP 2019063978W WO 2019229130 A3 WO2019229130 A3 WO 2019229130A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
polyoxovanadates
resistive switching
molecule
polyoxovanadate
Prior art date
Application number
PCT/EP2019/063978
Other languages
German (de)
French (fr)
Other versions
WO2019229130A2 (en
Inventor
Marco MOORS
Kirill MONAKHOV
Oliver LINNENBERG
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Publication of WO2019229130A2 publication Critical patent/WO2019229130A2/en
Publication of WO2019229130A3 publication Critical patent/WO2019229130A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C01G31/006—Compounds containing, besides vanadium, two or more other elements, with the exception of oxygen or hydrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data

Abstract

The invention relates to a resistive memory cell, which is characterized by the following general structure: i) a first electrode; ii) a second electrode; and iii) at least one polyoxovanadate as a discrete molecule (= individual molecule), which is arranged between the first and the second electrode and is adsorbed on the first electrode, wherein the polyoxovanadate is arranged as a discrete molecule (= individual molecule) between the first and second electrodes only one-or two-dimensionally on one plane.
PCT/EP2019/063978 2018-05-29 2019-05-29 Multi-resistive switching polyoxovanadates WO2019229130A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018208485.8A DE102018208485A1 (en) 2018-05-29 2018-05-29 Multiresistant switching polyoxovanadate
DE102018208485.8 2018-05-29

Publications (2)

Publication Number Publication Date
WO2019229130A2 WO2019229130A2 (en) 2019-12-05
WO2019229130A3 true WO2019229130A3 (en) 2020-01-23

Family

ID=66690357

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2019/063978 WO2019229130A2 (en) 2018-05-29 2019-05-29 Multi-resistive switching polyoxovanadates

Country Status (2)

Country Link
DE (1) DE102018208485A1 (en)
WO (1) WO2019229130A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6653704B1 (en) * 2002-09-24 2003-11-25 International Business Machines Corporation Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
US20160087067A1 (en) * 2014-09-19 2016-03-24 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO2017134589A1 (en) * 2016-02-04 2017-08-10 Ecole Polytechnique Federale De Lausanne (Epfl) Coating for optical and electronic applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6653704B1 (en) * 2002-09-24 2003-11-25 International Business Machines Corporation Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
US20160087067A1 (en) * 2014-09-19 2016-03-24 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO2017134589A1 (en) * 2016-02-04 2017-08-10 Ecole Polytechnique Federale De Lausanne (Epfl) Coating for optical and electronic applications

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARUUHAN BAYAGUUD ET AL: "Facile synthesis of an organically-derivatized hexavanadate containing the remote amino group, TBA 2 [V 6 O 13 {(OCH 2 ) 3 CNH 2 } 2 ]", CRYSTENGCOMM, vol. 18, no. 22, 1 January 2016 (2016-01-01), pages 4042 - 4045, XP055481612, DOI: 10.1039/C5CE02534F *
CHEN: "Coordination compounds of polyoxovanadates with a hexametalate core", J. AM. CHEM. SOC, 1 January 1992 (1992-01-01), pages 73, XP055643847, Retrieved from the Internet <URL:https://pubs.acs.org/doi/pdf/10.1021/ja00038a033> [retrieved on 20191119] *

Also Published As

Publication number Publication date
WO2019229130A2 (en) 2019-12-05
DE102018208485A1 (en) 2019-12-05

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