WO2019218385A1 - 硅和铌酸锂混合集成光调制器及其制备方法 - Google Patents

硅和铌酸锂混合集成光调制器及其制备方法 Download PDF

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WO2019218385A1
WO2019218385A1 PCT/CN2018/087918 CN2018087918W WO2019218385A1 WO 2019218385 A1 WO2019218385 A1 WO 2019218385A1 CN 2018087918 W CN2018087918 W CN 2018087918W WO 2019218385 A1 WO2019218385 A1 WO 2019218385A1
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silicon
optical
waveguide
lithium niobate
lithium
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蔡鑫伦
何名博
徐梦玥
余思远
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Sun Yat Sen University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure

Definitions

  • the present invention relates to the field of optical modulation technology, and more particularly to a silicon and lithium niobate hybrid integrated light modulator and a method of fabricating the same.
  • the silicon-based photonics platform is the best integrated optical platform available today.
  • the silicon-based photonics platform has a high refractive index difference due to its compatibility with traditional CMOS processes, making the silicon-based photonics platform easy to mass-produce and easy to integrate.
  • Silicon-based platforms are well suited for making passive devices, but the fundamental characteristics of silicon make it challenging to implement some active devices. Silicon itself is a centrally symmetrical crystal structure, so silicon has no linear electro-optical effect, and linear electro-optical effect is required for today's high-performance optical modulators.
  • the silicon-based modulator needs to rely on the plasma dispersion effect, which is usually realized by ion implantation to form a PN junction.
  • the refractive index of the silicon waveguide is changed by changing the carrier concentration of the PN junction, thereby realizing the modulation of the amplitude of the light wave.
  • this method changes the refractive index of the silicon waveguide, and also changes the loss of the silicon waveguide. It achieves high bandwidth based on the sacrificial extinction ratio, which makes the application of the silicon-based modulator in long-distance digital optical communication systems.
  • the carrier effect itself is a nonlinear process, the linearity of the silicon-based modulator is far less than the traditional lithium niobate device, and the future 5G mobile communication system, microwave photonics, and In the next generation of fiber-optic communication applications, the linearity requirements are getting higher and higher.
  • Lithium niobate material has superior linear electro-optical effect and is the material of choice for high performance optical modulators.
  • the invention aims at the problem that the existing silicon-based modulator has low extinction ratio, limited linearity, large insertion loss, and the like, and proposes a silicon and lithium niobate hybrid integrated light modulator, which combines silicon and lithium niobate.
  • the advantages of these two materials are to improve the performance of silicon-based light modulators, with high extinction ratio, high linearity, and low insertion loss.
  • a silicon and lithium niobate hybrid integrated light modulator comprising a silicon-on-insulator optical waveguide structure, an optical splitting structure, a silicon wedge waveguide optical mode conversion structure, a bonded dielectric layer, a lithium niobate waveguide, a signal metal electrode, and a ground a metal electrode, wherein the silicon-on-insulator optical structure is connected to an input end of the optical splitting structure, and the two output ends of the optical splitting structure are respectively connected to the lithium niobate waveguide through a silicon wedge waveguide optical mode conversion structure; the signal metal electrode Provided on an opposite side of the two output ends of the optical splitting structure; the grounded metal electrode is disposed on a side opposite to the two output ends of the optical splitting structure; the silicon-based optical structure, the optical splitting structure, and the silicon wedge waveguide An optical mode switching structure, a lithium niobate waveguide, a signal metal electrode, and a grounded metal electrode are disposed within the bonding dielectric layer.
  • the optical splitting structure splits the beam in the silicon-based optical structure into two perfectly equal beams and progressively couples the beam into the lithium niobate waveguide through the silicon wedge waveguide optical mode conversion structure.
  • Applying a voltage to the signal metal electrode and grounding the grounded metal electrode the refractive index of the lithium niobate waveguide changes due to the Pockels effect, and a refractive index difference ⁇ n is generated between the two lithium niobate waveguides, thereby making the two beams equal.
  • a phase difference occurs between the lights.
  • the two beams are gradually coupled into the silicon waveguide through the silicon wedge waveguide optical mode conversion structure, and the two beams of the optical splitting structure interfere to realize beam intensity modulation.
  • the number of the silicon-based optical waveguide structures is 2, the number of the optical splitting structures is 2, the number of the lithium niobate waveguides is 2, and 2 silicon-based optical waveguide structures are respectively separated from 2 optical points.
  • the input ends of the beam structure are connected; the two output ends of the two optical splitting structures are respectively connected to the left and right ends of the two lithium niobate waveguides through a silicon wedge waveguide optical mode conversion structure.
  • the number of the grounded metal electrodes is two, and the two grounded metal electrodes are respectively disposed on opposite sides of the two output ends of the optical splitting structure.
  • the present invention also provides a method for preparing a hybrid integrated light modulator of silicon and lithium niobate, the specific scheme of which is as follows:
  • an adhesion layer and a gold electrode are plated by a metal stripping process to obtain a lithium silicon niobate hybrid integrated optical modulator.
  • the present invention integrates lithium niobate and silicon to introduce a linear electro-optic effect of lithium niobate onto a silicon-based platform, and combines the advantages of two materials, silicon and lithium niobate, to improve the light modulator. performance.
  • Figure 1 is a three dimensional schematic view of an optical device of a lithium silicon niobate hybrid integrated modulator of the present invention.
  • FIG. 2 is a top plan view of an optical device of a lithium silicon niobate hybrid integrated modulator of the present invention.
  • FIG 3 is a schematic view showing a silicon wedge waveguide optical mode conversion structure of the present invention.
  • a silicon and lithium niobate hybrid integrated light modulator provided by the present invention includes: a silicon-on-insulator optical waveguide structure, an optical splitting structure 2, a silicon wedge waveguide optical mode conversion structure 3, and bonding.
  • Dielectric layer 4 lithium niobate waveguide 5, signal metal electrode 6, grounding metal electrode 7;
  • the silicon-on-insulator optical waveguide structure 1 is connected to the input end of the optical splitting structure 2, and the two output ends of the optical splitting structure 2 are respectively connected to the lithium niobate waveguide 5 through the silicon wedge waveguide optical mode conversion structure 3;
  • the signal metal electrode 6 is disposed on the opposite side of the two output ends of the optical splitting structure 2;
  • the grounded metal electrode 7 is disposed on the opposite side of the two output ends of the optical splitting structure 2;
  • the optical splitting structure 2, the silicon wedge waveguide optical mode conversion structure 3 is disposed in the bonding medium layer 4, and the lithium niobate waveguide 5, the signal metal electrode 6, and the grounding metal electrode 7 are disposed above the bonding medium layer 4.
  • the optical splitting structure 2 splits the light beam in the silicon-based optical structure 1 into two completely equal beams, and the light beam is gradually coupled into the lithium niobate waveguide 5 through the mode conversion structure 3.
  • a voltage is applied to the signal metal electrode 6, and the grounded metal electrode 7 is grounded. Due to the change in the refractive index of the Pockels effect lithium niobate waveguide, a refractive index difference ⁇ n is generated between the two lithium niobate waveguides 5, thereby causing two A phase difference occurs between the beams of equal light.
  • the two beams are gradually coupled into the silicon waveguide through the mode conversion structure 3, and interfere with the two beams of the optical splitting structure 2 to realize beam intensity modulation.
  • an adhesion layer and a gold electrode are plated by a metal stripping process to obtain a lithium silicon niobate hybrid integrated optical modulator.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract

一种硅和铌酸锂混合集成光调制器，包括绝缘体上硅基光波导结构（1）、光学分束结构（2）、硅楔形波导光学模式转换结构（3）、键合介质层（4）、铌酸锂波导（5）、信号金属电极（6）和接地金属电极（7），其中绝缘体上硅基光波导结构（3）与光学分束结构（2）的输入端连接，光学分束结构（2）的两个输出端分别通过硅楔形波导光学模式转换结构（3）与铌酸锂波导（5）连接；信号金属电极（6）设置在铌酸锂波导（5）相对的一侧；接地金属电极（7）设置在铌酸锂波导（5）相背的一侧；该混合集成光调制器是一种双层结构：硅基光波导结构（1）、光学分束结构（2）、硅楔形波导光学模式转换结构（3）设置在键合介质层（4）内，铌酸锂波导（5）、信号金属电极（6）和接地金属电极（7）设置在键合介质层（4）上方。还包括该硅和铌酸锂混合集成光调制器的相应制备方法。

Description

硅和铌酸锂混合集成光调制器及其制备方法 技术领域
本发明涉及光学调制技术领域，更具体地，涉及一种硅和铌酸锂混合集成光调制器及其制备方法。
背景技术
硅基光子学平台是当下最好的集成光学平台。硅基光子学平台由于其与传统CMOS工艺兼容，具有高折射率差，使得硅基光子学平台具有易于大规模制作、易于集成两大优势。硅基平台十分适合制作无源器件，但是硅的基本特性导致实现一些有源器件有巨大的挑战。硅本身是中心对称的晶体结构，因此硅没有线性电光效应，而线性电光效应是目前高性能光调制器所需的。硅基调制器需要依靠等离子体色散效应，通常利用离子注入形成PN结的方式实现，通过改变PN结的载流子浓度来改变硅波导的折射率，进而实现对光波振幅的调制。不过这种方式在改变硅波导的折射率的同时，也会改变硅波导的损耗，是在牺牲消光比的基础上实现高带宽，这使得硅基调制器在长距离数字光通信系统中的应用受到限制，此外，由于载流子效应本身是一个非线性过程，因此硅基调制器的线性度远远比不上传统的铌酸锂器件，而未来的5G移动通信系统，微波光子学，以及下一代光纤通信的应用中，线性度的要求越来越高。
综上所述，尽管硅基光子器件有非常大的技术优势，但是基于载流子效应的硅基调制器在性能上仍然无法与商用的铌酸锂调制器相比拟。铌酸锂材料具有优越的线性电光效应，是高性能光调制器的首选材料。
发明内容
本发明针对现有硅基调制器消光比不高、线性度受限、插入损耗大等问题，提出一种硅和铌酸锂混合集成光调制器，该光调制器通过结合硅和铌酸锂这两种材料的优点，来提高硅基光调制器的性能，具有高消光比，高线性度，低插入损耗的优点。
为实现以上发明目的，采用的技术方案是：
一种硅和铌酸锂混合集成光调制器，包括绝缘体上硅基光波导结构、光学分束结构、硅楔形波导光学模式转换结构、键合介质层、铌酸锂波导、信号金属电 极和接地金属电极，其中绝缘体上硅基光学结构与光学分束结构的输入端连接，光学分束结构的两个输出端分别通过硅楔形波导光学模式转换结构与铌酸锂波导连接；所述信号金属电极设置在光学分束结构的两个输出端相对的一侧；接地金属电极设置在光学分束结构两个输出端相背的一侧；所述硅基光学结构、光学分束结构、硅楔形波导光学模式转换结构、铌酸锂波导、信号金属电极和接地金属电极设置在键合介质层内。
在具体使用的时候，光学分束结构将硅基光学结构中的光束分成两束完全相等的光束通过硅楔形波导光学模式转换结构将光束逐步耦合进入铌酸锂波导中。在信号金属电极上加电压，将接地金属电极接地，由于普克尔斯效应铌酸锂波导的折射率发生变化，两条铌酸锂波导之间产生折射率差Δn，从而使两束相等的光之间产生相位差。将两束光通过硅楔形波导光学模式转换结构逐步耦合进入硅波导,通过光学分束结构两束光发生干涉，实现光束强度调制。
优选地，所述硅基光波导结构的数量为2，所述光学分束结构的数量为2，所述铌酸锂波导的数量为2，2个硅基光波导结构分别与2个光学分束结构的输入端连接；2个光学分束结构的2个输出端分别通过硅楔形波导光学模式转换结构与2个铌酸锂波导的左右两端连接。
优选地，所述接地金属电极的数量为2个，2个接地金属电极分别设置在光学分束结构两个输出端相背的一侧。
同时，本发明还提供了一种以上硅和铌酸锂混合集成光调制器的制备方法，其具体的方案如下：
1)绝缘体上硅薄膜的基片上利用光刻刻蚀技术制作硅基光学结构；
2)在所述步骤1)得到的硅基光学结构上旋涂苯并环丁烯；
3)将绝缘体-埋氧层-铌酸锂薄膜的晶片贴在所述步骤2)得到的绝缘体-埋氧层-硅基光学结构-苯并环丁烯复合材料上，高温退火，得到硅铌酸锂组合基片；
4)利用一系列机械化学手段将所述步骤3)得到的硅铌酸锂组合基片上位于铌酸锂薄膜上方的埋氧层和绝缘体去掉，得到硅铌酸锂薄膜组合基片；
5)在所述步骤4)得到的组合基片上利用光刻和刻蚀手段制作铌酸锂波导；
6)在所述步骤5)得到的结构中利用金属剥离工艺，镀上粘附层和金电极，得到硅铌酸锂混合集成光学调制器。
与现有技术相比，本发明的有益效果是：
1)本发明将铌酸锂和硅混合集成在一起，把铌酸锂的线性电光效应引入到硅基平台上，通过结合硅和铌酸锂这两种材料的优点，来提高光调制器的性能。
2)采用了干法刻蚀铌酸锂材料的工艺，提高了电场和光场的相互作用，可以实现高效率的调制器。
附图说明
图1是本发明的一种硅铌酸锂混合集成调制器的光学器件的三维示意图。
图2是本发明的一种硅铌酸锂混合集成调制器的光学器件的俯视图。
图3是本发明的一种硅楔形波导光学模式转换结构示意图。
具体实施方式
附图仅用于示例性说明，不能理解为对本专利的限制；
以下结合附图和实施例对本发明做进一步的阐述。
实施例1
参照图1～3，本发明提供的一种硅和铌酸锂混合集成光调制器包括：绝缘体上硅基光波导结构1、光学分束结构2、硅楔形波导光学模式转换结构3、键合介质层4、铌酸锂波导5、信号金属电极6、接地金属电极7；
其中绝缘体上硅基光波导结构1与光学分束结构2的输入端连接，光学分束结构2的两个输出端分别通过硅楔形波导光学模式转换结构3与铌酸锂波导5连接；所述信号金属电极6设置在光学分束结构2的两个输出端相对的一侧；接地金属电极7设置在光学分束结构2两个输出端相背的一侧；所述硅基光学结构1、光学分束结构2、硅楔形波导光学模式转换结构3设置在键合介质层4内，铌酸锂波导5、信号金属电极6和接地金属电极7设置在键合介质层4上方。
光学分束结构2将硅基光学结构1中的光束分成两束完全相等的光束通过模式转换结构3将光束逐步耦合进入铌酸锂波导5中。在信号金属电极6上加电压，将接地金属电极7接地，由于普克尔斯效应铌酸锂波导的折射率发生变化，两条铌酸锂波导5之间产生折射率差Δn，从而使两束相等的光之间产生相位差。将两束光通过模式转换结构3逐步耦合进入硅波导,同过光学分束结构2两束光发生干涉，实现光束强度调制。
本发明制作硅铌酸锂混合集成调制器的具体工艺步骤如下：
1)绝缘体上硅薄膜的基片上利用光刻刻蚀技术制作硅基光学结构；
2)在所述步骤1)得到的硅基光学结构上旋涂苯并环丁烯；
3)将绝缘体-埋氧层-铌酸锂薄膜的晶片贴在所述步骤2)得到的绝缘体-埋氧层-硅基光学结构-苯并环丁烯复合材料上，高温退火，得到硅铌酸锂组合基片；
4)利用一系列机械化学手段将所述步骤3)得到的硅铌酸锂组合基片上位于铌酸锂薄膜上方的埋氧层和绝缘体去掉，得到硅铌酸锂薄膜组合基片；
5)在所述步骤4)得到的组合基片上利用光刻和刻蚀手段制作铌酸锂波导；
6)在所述步骤5)得到的结构中利用金属剥离工艺，镀上粘附层和金电极，得到硅铌酸锂混合集成光学调制器。
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (4)

  1. 一种硅和铌酸锂混合集成光调制器，其特征在于：包括绝缘体上硅基光波导结构、光学分束结构、硅楔形波导光学模式转换结构、键合介质层、铌酸锂波导、信号金属电极和接地金属电极，其中绝缘体上硅基光学结构与光学分束结构的输入端连接，光学分束结构的两个输出端分别通过硅楔形波导光学模式转换结构与铌酸锂波导连接；所述信号金属电极设置在光学分束结构的两个输出端相对的一侧；接地金属电极设置在光学分束结构两个输出端相背的一侧；所述混合集成光调制器是一种双层结构：硅基光波导结构、光学分束结构、硅楔形波导光学模式转换结构设置在键合介质层内，铌酸锂波导、信号金属电极和接地金属电极设置在键合介质层上方。
  2. 根据权利要求1所述的硅和铌酸锂混合集成光调制器，其特征在于：所述硅基光波导结构的数量为2，所述光学分束结构的数量为2，所述铌酸锂波导的数量为2，2个硅基光波导结构分别与2个光学分束结构的输入端连接；2个光学分束结构的2个输出端分别通过硅楔形波导光学模式转换结构与2个铌酸锂波导的左右两端连接。
  3. 根据权利要求2所述的硅和铌酸锂混合集成光调制器，其特征在于：所述接地金属电极的数量为2个，2个接地金属电极分别设置在光学分束结构两个输出端相背的一侧。
  4. 一种根据权利要求1～3任一项所述硅和铌酸锂混合集成光调制器的制备方法，其特征在于：包括以下步骤：
    1)绝缘体上硅薄膜的基片上利用光刻刻蚀技术制作硅基光学结构；
    2)在所述步骤1)得到的硅基光学结构上旋涂苯并环丁烯；
    3)将绝缘体-埋氧层-铌酸锂薄膜的晶片贴在所述步骤2)得到的绝缘体-埋氧层-硅基光学结构-苯并环丁烯复合材料上，高温退火，得到硅铌酸锂组合基片；
    4)利用一系列机械化学手段将所述步骤3)得到的硅铌酸锂组合基片上位于铌酸锂薄膜上方的埋氧层和绝缘体去掉，得到硅铌酸锂薄膜组合基片；
    5)在所述步骤4)得到的组合基片上利用光刻和刻蚀手段制作铌酸锂波导；
    6)在所述步骤5)得到的结构中利用金属剥离工艺，镀上粘附层和金电极，得到硅铌酸锂混合集成光学调制器。
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