WO2019208589A1

WO2019208589A1 - Substrate treatment device, substrate treatment method, delay period setting method, and program

Info

Publication number: WO2019208589A1
Application number: PCT/JP2019/017291
Authority: WO
Inventors: 憲太郎 ▲徳▼利
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2018-04-25
Filing date: 2019-04-23
Publication date: 2019-10-31
Also published as: TWI710414B; TW202010577A; JP7048403B2; JP2019192799A

Abstract

This substrate treatment device comprises: a substrate holding unit for holding a substrate; a first nozzle for discharging a first treatment solution toward the substrate held by the substrate holding unit; first piping for supplying the first treatment solution to the first nozzle; a first valve for opening and closing the first piping; a second nozzle for discharging a second treatment solution toward the substrate held by the substrate holding unit, the second nozzle being different from the first nozzle; second piping for supplying the second treatment solution to the second nozzle; a second valve for opening and closing the second piping; and a controller for controlling opening and closing of the first valve and the second valve. The controller executes a first closing operation step for closing the first valve in an open state in a state where the first treatment solution is being discharged from the first nozzle, and a second opening operation step for starting an opening operation of the second valve in a state where the discharge of the first treatment solution from the first nozzle does not completely stop after a lapse of a delay period from the start of the closing operation of the first valve.

Description

Substrate processing apparatus, substrate processing method, delay period setting method, and program

The present invention relates to a substrate processing apparatus, a substrate processing method, a delay period setting method, and a program. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, FPD (Flat Panel Display) substrates such as organic EL (electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and magneto-optical disks. Substrates, photomask substrates, ceramic substrates, solar cell substrates and the like are included.

In the manufacturing process of semiconductor devices and liquid crystal display devices, substrates such as semiconductor wafers and glass substrates for liquid crystal display devices are processed, for example, one by one. Specifically, the main surface of the substrate is treated with the chemical solution by supplying the chemical solution to the substrate. Thereafter, pure water is supplied to the substrate, so that the chemical solution adhering to the substrate is washed away. After the chemical solution is washed away, IPA (isopropyl alcohol) which is an example of an organic solvent is supplied to the substrate, and the pure water adhering to the substrate is replaced with IPA. Thereafter, when the substrate is rotated at a high speed, IPA adhering to the substrate is removed from the substrate, and the substrate is dried.

However, in such a substrate processing method, when the substrate is dried, the pattern formed on the main surface of the substrate may collapse. Therefore, Patent Document 1 below discloses a technique of hydrophobizing the main surface of the substrate after replacement with IPA in order to prevent the pattern from collapsing.

Specifically, after the liquid film of IPA on the upper surface of the substrate is formed, the hydrophobizing agent is supplied to the upper surface of the substrate by discharging the hydrophobizing agent from the nozzle toward the center of the upper surface of the substrate, A liquid film of a hydrophobizing agent is formed on the upper surface of the substrate to cover the entire area of the upper surface. Thereby, the upper surface of the substrate is hydrophobized. Thereafter, the substrate is rotated at a high speed to dry the substrate.

Patent Document 2 below describes that the period from the end of the chemical treatment to the start of the rinsing process is set to a short time of 0.5 seconds or more and 1.5 seconds or less.

JP 2017-112391 A JP 2005-327807 A

In the method of Patent Document 1, an interval from the end of the IPA treatment to the start of the hydrophobizing agent treatment is transferred from the IPA treatment (treatment using IPA) to the hydrophobizing agent treatment (treatment using the hydrophobizing agent). If there is a gap, the IPA is dried on the upper surface of the substrate, and as a result, the pattern collapse may occur.

In order to solve this problem, it can be considered that the transition from the IPA treatment to the hydrophobizing agent treatment is continuously performed. Specifically, the nozzle for supplying the hydrophobizing agent and IPA is divided into a hydrophobizing agent nozzle and an IPA nozzle, and a hydrophobizing agent valve interposed in a hydrophobizing agent pipe connected to the hydrophobizing agent nozzle It is conceivable to synchronize the start of the closing operation with the start of the opening operation of the IPA valve interposed in the IPA pipe connected to the IPA nozzle.

However, there is a time lag from the start of the closing operation of the IPA valve until the IPA valve is completely closed. In addition, there is a time lag from the start of the opening operation of the hydrophobizing agent valve to the fully opening of the hydrophobizing agent valve. Therefore, when shifting from the IPA process to the hydrophobizing agent process, the period during which IPA is discharged from the IPA nozzle partially overlaps with the period during which the hydrophobizing agent is discharged from the hydrophobizing agent nozzle. Since the landing position of the IPA on the upper surface of the substrate and the landing position of the hydrophobizing agent on the upper surface of the substrate are both in the center of the upper surface of the substrate and are close to each other, At the time of transfer, the hydrophobizing agent discharged from the hydrophobizing agent nozzle and the IPA discharged from the IPA nozzle interfere with each other, and there is a possibility that liquid splashing or large liquid disturbance occurs. Then, there is a possibility that pattern collapse or particle contamination may occur due to these liquid splashes or large liquid disturbances.

In order to suppress or prevent such pattern collapse at the center of the upper surface, as described in Patent Document 2 below, from the end of the discharge of IPA from the discharge port of the IPA nozzle, the discharge from the discharge port of the hydrophobizing agent nozzle It is also conceivable that the period until the start of discharging the hydrophobizing agent is left for a predetermined short time. However, in this case, since the state after the IPA treatment is left as it is, there is a concern that the pattern collapses due to the drying of the IPA as described above.

Therefore, the treatment liquid (hydrophobizing agent or IPA) is not drained on the substrate, and the hydrophobizing agent treatment is performed while suppressing or preventing the occurrence of liquid splash due to interference between the hydrophobizing agent and IPA. It is necessary to move to.

Also, after the substrate is hydrophobized, IPA is supplied toward the center of the upper surface of the substrate, and the IPA held on the upper surface of the substrate may be replaced with a hydrophobizing agent prior to drying. The same problem exists when shifting from the hydrophobizing agent treatment to the IPA treatment.

Furthermore, the present invention is not limited to the case where the hydrophobizing agent and IPA are used as the processing liquid, and the case where the other processing liquid is used is the first processing liquid processing (processing using the first processing liquid) after the end. If a period of time elapses before the start of the second processing liquid processing (processing using the second processing liquid), problems such as generation of particles due to exposure of the upper surface of the substrate may occur.

Accordingly, one object of the present invention is to suppress or prevent the occurrence of liquid splash due to interference between the first processing liquid and the second processing liquid, and without causing the substrate to run out of liquid. It is to provide a substrate processing apparatus and a substrate processing method capable of shifting from the processing liquid processing to the second processing liquid processing.

When the opening operation of the second valve (hydrophobizing agent valve) is started after the closing operation of the first valve (IPA valve) is started, the closing operation of the first valve is controlled for the control of the substrate processing apparatus. It is necessary to set a delay period from the start to the start of the opening operation of the second valve. It is required to set such a delay period satisfactorily.

Accordingly, another object of the present invention is to provide a substrate processing apparatus, a delay period setting method, and a program capable of satisfactorily setting a delay period from the start of the first valve closing operation to the start of the second valve opening operation. Is to provide.

According to a first aspect of the present invention, there is provided a substrate holding unit for holding a substrate, a first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit, and the first A first pipe for supplying a first processing liquid to one nozzle, a first valve for opening and closing the first pipe, and a nozzle different from the first nozzle, wherein the substrate holding unit A second nozzle for discharging a second processing liquid toward the substrate held on the substrate, a second pipe for supplying the second processing liquid to the second nozzle, and the second nozzle A second valve that opens and closes the second pipe, and a control device that controls the opening and closing of the first valve and the second valve, and the control device controls the first processing liquid from the first nozzle. The first valve in the open state is closed while After the first closing operation step and the delay period from the start of the closing operation of the first valve, the discharge of the first processing liquid from the first nozzle is not completely stopped. Provided is a substrate processing apparatus for executing a second opening operation step for starting an opening operation of a second valve.

According to this configuration, after the delay period has elapsed since the start of the closing operation of the first valve, the discharge of the first processing liquid from the first nozzle is not completely stopped, and the second valve Opening operation is started. Since the start of the opening operation of the second valve is delayed from the start of the closing operation of the first valve, the period during which the discharged first processing liquid and the discharged second processing liquid interfere with each other is short. Therefore, it is possible to suppress or prevent the occurrence of liquid splash and large liquid disturbance due to interference between the first processing liquid and the second processing liquid. In addition, since the opening operation of the second valve is started at the timing when the discharge of the first processing liquid from the first nozzle is not completely stopped, the supply of the processing liquid to the substrate is not interrupted. Can be done continuously. For this reason, the substrate does not run out of liquid. As a result, while suppressing or preventing the occurrence of liquid splash due to the interference between the first treatment liquid and the second treatment liquid, and without causing the substrate to run out, the second treatment liquid can be removed from the first treatment liquid treatment. It is possible to shift to treatment liquid treatment.

In one embodiment of the present invention, the second opening operation step starts the opening operation of the second valve in a state where the flow of the first processing liquid in the first valve is not completely stopped. Process.

According to this configuration, after the lapse of the delay period from the start of the first valve closing operation, the second valve opening operation is performed at a timing when the flow of the first processing liquid in the first valve is not completely stopped. Is started.

"Timing when the discharge of the first processing liquid from the first nozzle is not completely stopped" is equivalent to "timing when the flow of the first processing liquid through the first valve is not completely stopped" it can. In addition, by arranging a flow meter or the like in the first pipe, it is possible to satisfactorily detect “a timing at which the flow of the first processing liquid in the first valve is not completely stopped”. Therefore, the “timing at which the discharge of the first processing liquid from the first nozzle is not completely stopped” can be acquired satisfactorily.

In one embodiment of the present invention, the delay period is such that the discharge flow rate of the first processing liquid from the first nozzle matches the discharge flow rate of the second processing liquid from the second nozzle. The total flow rate of the discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid is provided to be equal to or less than a predetermined threshold value, and the predetermined threshold value is the first treatment liquid. This is a value lower than the discharge flow rate.

According to this configuration, the period during which the first processing liquid is discharged from the first nozzle and the period during which the second processing liquid is discharged from the second nozzle overlap. At this time, the discharge flow rate of the first treatment liquid and the second flow rate at the timing when the discharge flow rate of the first treatment liquid from the first nozzle matches the discharge flow rate of the second treatment liquid from the second nozzle. The delay period is set so that the total flow rate with the processing liquid discharge flow rate (hereinafter, simply referred to as “total flow rate”) is less than or equal to a predetermined threshold value. The threshold value is lower than the discharge flow rate of the first processing liquid immediately before the start of the closing operation of the first valve. Since the total flow rate is set to be equal to or less than such a threshold value, a large liquid splash does not occur on the substrate due to the interference between the first processing liquid and the second processing liquid. Therefore, it is possible to suppress or prevent the occurrence of liquid splash at the time of transition from the first treatment liquid treatment to the second treatment liquid treatment.

In this embodiment, the delay period includes the first flow rate transition information about the transition of the discharge flow rate of the first processing liquid after the start of the closing operation of the first valve, and the opening operation of the second valve. Based on the second flow rate transition information about the transition of the discharge flow rate of the second processing liquid after the start of the above, the total flow rate is provided to be equal to or less than the threshold value.

According to this configuration, the first flow rate transition information and the second flow rate transition information are different for each substrate processing apparatus that performs processing or for each processing condition. Since a delay period is provided so that the total flow rate is equal to or less than the threshold value based on the first flow rate transition information and the second flow rate transition information, a good delay period corresponding to the substrate processing apparatus and processing conditions is provided. It can be easily provided.

The threshold value may be a value obtained by an experiment using the substrate processing apparatus.

In one embodiment of the present invention, a predetermined period may be stored in the storage unit as the delay period. In this case, the control device may execute the second opening operation step based on a delay period stored in the storage unit.

In one embodiment of the present invention, the first treatment liquid may include one of a hydrophobizing agent and an organic solvent, and the second treatment liquid may include the other of the hydrophobizing agent and the organic solvent.

In this case, in a state where one of the hydrophobizing agent and the organic solvent is discharged from the first nozzle, the first valve in the open state is closed. In addition, after the lapse of the delay period from the start of the closing operation of the first valve, the discharge of the one of the hydrophobizing agent and the organic solvent from the first nozzle is not completely stopped. Opening operation is started. As a result, the other of the hydrophobizing agent and the organic solvent is discharged from the second nozzle.

Since the start of the opening operation of the second valve is delayed from the start of the closing operation of the first valve, the period during which the hydrophobizing agent and the organic solvent interfere on the substrate is short. For this reason, it is possible to suppress or prevent the occurrence of liquid splash and large liquid disturbance associated with interference between the hydrophobizing agent and the organic solvent.

In addition, since the opening operation of the second valve is started at the timing when one of the hydrophobizing agent and the organic solvent is not completely stopped from being discharged from the first nozzle, the other of the hydrophobizing agent and the organic solvent Until one of the hydrophobizing agent and the organic solvent is dried on the substrate.

This suppresses or prevents the occurrence of liquid splash due to interference between the hydrophobizing agent and the organic solvent, and suppresses or prevents drying of the hydrophobizing agent and the organic solvent on one of the substrates. And a treatment using one of the organic solvent and a treatment using the other of the hydrophobizing agent and the organic solvent.

According to a second aspect of the present invention, there is provided a substrate holding unit for holding a substrate, a first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit, and the first A first pipe for supplying a first processing liquid to one nozzle, a first valve for opening and closing the first pipe, and a second process toward the substrate held by the substrate holding unit. A second nozzle for discharging a liquid, a second pipe for supplying a second processing liquid to the second nozzle, a second valve for opening and closing the second pipe, and the second A delay period setting unit for setting a delay period from the start of the closing operation of the first valve to the start of the opening operation of the second valve, wherein the delay period setting unit is configured to perform the closing operation of the first valve. Discharge of the first processing liquid from the first nozzle after the start First flow rate transition information about the flow rate transition and second flow rate transition information about the transition of the discharge flow rate of the second processing liquid from the second nozzle after the start of the opening operation of the second valve. A substrate processing apparatus is provided that calculates the delay period based on and sets the delay period.

According to this configuration, the substrate processing apparatus includes the delay period setting unit that sets the delay period from the start of the closing operation of the first valve to the start of the second opening operation step. The first flow rate transition information and the second flow rate transition information are different for each substrate processing apparatus that performs processing or for each processing condition. Since a delay period is provided so that the total flow rate is equal to or less than the threshold value based on the first flow rate transition information and the second flow rate transition information, a good delay period corresponding to the substrate processing apparatus and processing conditions is provided. It can be easily provided.

In one embodiment of the present invention, an information acquisition control device that controls opening and closing of the first valve and the second valve in order to acquire the first flow rate transition information and the second flow rate transition information. In addition, the delay period setting unit sets the delay period based on the acquired first flow rate transition information and second flow rate transition information.

According to this configuration, the information acquisition control device, based on a preliminary experiment performed by actually opening and closing the first valve and the second valve, the first flow rate transition information corresponding to the substrate processing apparatus and the first flow rate information. The flow rate transition information of 2 is acquired. Then, a delay period is set based on the acquired first flow rate transition information and second flow rate transition information. Since the first flow rate transition information and the second flow rate transition information are information based on actual measurement in the substrate processing apparatus, it is possible to set a favorable delay period in which individual differences of the substrate processing apparatuses are excluded.

In one embodiment of the present invention, an information acquisition control device that controls opening and closing of the first valve and the second valve in order to acquire the first flow rate transition information and the second flow rate transition information; , A flow meter for measuring the discharge flow rate of the first processing liquid, the discharge flow rate measured by the flow meter, and the discharge flow rate of the first processing liquid based on the acquired first flow rate transition information A prediction unit that predicts the future transition of the delay period, and the delay period setting unit is configured to delay the delay period based on the future transition predicted by the prediction unit and the acquired second flow rate transition information. Set.

According to this configuration, the future transition of the discharge flow rate of the first processing liquid is predicted based on the current discharge flow rate of the first processing liquid being measured. Then, a delay period is set in parallel with the progress of the substrate processing based on the predicted first flow rate transition information and the acquired second flow rate transition information. Thereby, it is possible to set a good delay period most suitable for the processing conditions of the ongoing substrate processing.

In one embodiment of the present invention, the delay period setting unit is configured to determine the discharge flow rate of the first processing liquid and the second processing liquid based on the first flow rate transition information and the second flow rate transition information. The delay period is set so that the total flow rate of the discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid in a state where the discharge flow rate is equal to or less than a threshold value.

According to this configuration, the period during which the first processing liquid is discharged from the first nozzle and the period during which the second processing liquid is discharged from the second nozzle overlap. At this time, the discharge flow rate of the first treatment liquid and the second flow rate at the timing when the discharge flow rate of the first treatment liquid from the first nozzle matches the discharge flow rate of the second treatment liquid from the second nozzle. The delay period is set so that the total flow rate with the treatment liquid discharge flow rate is equal to or less than a predetermined threshold. The threshold value is lower than the discharge flow rate of the first processing liquid immediately before the start of the closing operation of the first valve. Since the total flow rate is set to be equal to or less than such a threshold value, a large liquid splash does not occur on the substrate due to the interference between the first processing liquid and the second processing liquid. Therefore, it is possible to suppress or prevent the occurrence of liquid splash at the time of transition from the first treatment liquid treatment to the second treatment liquid treatment.

In one embodiment of the present invention, the delay period setting unit sets the shortest period among the periods in which the total flow rate is equal to or less than a threshold as the delay period.

According to this configuration, the shortest period among the periods in which the total flow rate is equal to or less than the threshold is set as the delay period. Thereby, it is possible to shift from the first processing liquid processing to the second processing liquid processing without causing the substrate to run out of liquid.

The landing position of the second processing liquid from the second nozzle on the substrate may be close to the landing position of the first processing liquid from the first nozzle on the substrate.

According to a third aspect of the present invention, there is provided a substrate holding unit for holding a substrate, a first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit, and the first A first pipe for supplying a first processing liquid to one nozzle, a first valve for opening and closing the first pipe, and a nozzle different from the first nozzle, wherein the substrate holding unit A second nozzle for discharging a second processing liquid toward the substrate held on the substrate, a second pipe for supplying the second processing liquid to the second nozzle, and the second nozzle A substrate processing method executed in a substrate processing apparatus including a second valve that opens and closes a second pipe, wherein the first processing liquid is discharged from the first nozzle and is in an open state. A first closing operation step of closing the first valve; After the elapse of the delay period from the start of the valve closing operation, the second valve opening operation is started in a state where the discharge of the first processing liquid from the first nozzle is not completely stopped. And a substrate processing method including the opening operation step.

According to this method, after the lapse of the delay period from the start of the closing operation of the first valve, the discharge of the first processing liquid from the first nozzle is not completely stopped. Opening operation is started. Since the start of the opening operation of the second valve is delayed from the start of the closing operation of the first valve, the period during which the discharged first processing liquid and the discharged second processing liquid interfere with each other is short. Therefore, it is possible to suppress or prevent the occurrence of liquid splash and large liquid disturbance due to interference between the first processing liquid and the second processing liquid. In addition, since the opening operation of the second valve is started at the timing when the discharge of the first processing liquid from the first nozzle is not completely stopped, the supply of the processing liquid to the substrate is not interrupted. Can be done continuously. For this reason, the substrate does not run out of liquid. As a result, while suppressing or preventing the occurrence of liquid splash due to the interference between the first treatment liquid and the second treatment liquid, and without causing the substrate to run out, the second treatment liquid can be removed from the first treatment liquid treatment. It is possible to shift to treatment liquid treatment.

In one embodiment of the present invention, the delay period is such that the discharge flow rate of the first processing liquid from the first nozzle matches the discharge flow rate of the second processing liquid from the second nozzle. The total flow rate of the flow rate of the first treatment liquid and the flow rate of the second treatment liquid is set to be equal to or less than a predetermined threshold value, and the predetermined threshold value is a discharge flow rate of the first treatment liquid. Is a lower value.

According to this method, the period during which the first processing liquid is discharged from the first nozzle overlaps with the period during which the second processing liquid is discharged from the second nozzle. At this time, the discharge flow rate of the first treatment liquid and the second flow rate at the timing when the discharge flow rate of the first treatment liquid from the first nozzle matches the discharge flow rate of the second treatment liquid from the second nozzle. The delay period is set so that the total flow rate with the treatment liquid discharge flow rate is equal to or less than a predetermined threshold. The threshold value is lower than the discharge flow rate of the first processing liquid immediately before the start of the closing operation of the first valve. Since the total flow rate is set to be equal to or less than such a threshold value, a large liquid splash does not occur on the substrate due to the interference between the first processing liquid and the second processing liquid. Therefore, it is possible to suppress or prevent the occurrence of liquid splash at the time of transition from the first treatment liquid treatment to the second treatment liquid treatment.

In one embodiment of the present invention, the delay period includes first flow rate transition information about a transition of the discharge flow rate of the first processing liquid after the start of the closing operation of the first valve, and the second valve. And the second flow rate transition information about the transition of the discharge flow rate of the second processing liquid after the start of the opening operation.

According to this method, the first flow rate transition information and the second flow rate transition information are different for each substrate processing apparatus that performs processing or for each processing condition. Since a delay period is provided so that the total flow rate is equal to or less than the threshold value based on the first flow rate transition information and the second flow rate transition information, a good delay period corresponding to the substrate processing apparatus and processing conditions is provided. It can be easily provided.

The first treatment liquid may contain one of a hydrophobizing agent and an organic solvent, and the second treatment liquid may contain the other of a hydrophobizing agent and an organic solvent.

According to a fourth aspect of the present invention, there is provided a substrate holding unit for holding a substrate, a first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit, and the first A first pipe for supplying a first processing liquid to one nozzle, a first valve for opening and closing the first pipe, and a second process toward the substrate held by the substrate holding unit. A substrate including a second nozzle for discharging a liquid, a second pipe for supplying a second processing liquid to the second nozzle, and a second valve for opening and closing the second pipe In the processing apparatus, a delay period setting method for setting a delay period from the start of the closing operation of the first valve to the start of the opening operation of the second valve, wherein the delay period is the first valve. The first nozzle from the first nozzle after the start of the closing operation of The first flow rate transition information about the transition of the discharge flow rate of the chemical liquid and the second about the transition of the discharge flow rate of the second processing liquid from the second nozzle after the start of the opening operation of the second valve. On the basis of the flow rate transition information of the first treatment liquid and the discharge flow rate of the second treatment liquid when the discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid coincide with each other. There is provided a delay period setting method for calculating a period during which a total flow rate with a discharge flow rate is equal to or less than a threshold and setting the period as the delay period.

According to this method, the delay period setting method sets a delay period from the start of the first valve closing operation to the start of the second opening operation step. The first flow rate transition information and the second flow rate transition information are different for each substrate processing apparatus that performs processing or for each processing condition. Since a delay period is provided so that the total flow rate is equal to or less than the threshold value based on the first flow rate transition information and the second flow rate transition information, a good delay period corresponding to the substrate processing apparatus and processing conditions is provided. It can be easily provided.

In one embodiment of the present invention, the delay period setting method sets the shortest period among the periods in which the total flow rate is equal to or less than a threshold as the delay period.

According to this method, the shortest period among the periods in which the total flow rate is equal to or less than the threshold is set as the delay period. Thereby, it is possible to shift from the first processing liquid processing to the second processing liquid processing without causing the substrate to run out of liquid.

The fifth aspect of the present invention is different from the first nozzle from the start of the closing operation of the first valve for opening and closing the first pipe for supplying the first processing liquid to the first nozzle. In order to execute a delay period setting method for setting a delay period until the start of the opening operation of the second valve that opens and closes the second pipe for opening and closing the second pipe for supplying the second processing liquid to the second nozzle that is the first nozzle The delay period setting method is a program for changing the discharge flow rate of the first processing liquid from the first nozzle after the delay period starts the closing operation of the first valve. First flow rate transition information and second flow rate transition information about the transition of the discharge flow rate of the second processing liquid from the second nozzle after the start of the opening operation of the second valve. The discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid are A program for calculating a period in which a total flow rate of the discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid is equal to or less than a threshold in a matching state, and setting the period as the delay period provide.

The program (computer program) may be provided by being recorded on a computer-readable recording medium. Such a recording medium may be a recording medium provided in the computer, or may be a recording medium different from the computer. The program may be provided by communication via a communication line. A part or all of the communication line may be a wireless line.

The above-described or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.

FIG. 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention as viewed from above. FIG. 2 is a schematic view of the inside of the processing unit provided in the substrate processing apparatus as viewed in the horizontal direction. FIG. 3 is a schematic longitudinal sectional view for explaining a configuration example of the common nozzle. FIG. 4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus. FIG. 5 is an enlarged cross-sectional view showing the surface of a substrate to be processed by the substrate processing apparatus. FIG. 6 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus. FIG. 7 is a schematic view of the substrate viewed horizontally from the IPA supply process to the hydrophobizing agent supply process. FIG. 8 is a diagram showing the transition of the flow rate of the treatment liquid in the valve opening and closing and the valve during the transition from the IPA supply process to the hydrophobizing agent supply process. FIG. 9 is an enlarged view of a main part of FIG. FIG. 10 is a diagram showing the transition of the flow rate of the treatment liquid in the valve opening and closing and the valve during the transition to the hydrophobizing agent supply step according to the reference embodiment. FIG. 11 is an enlarged view of the main part of FIG. FIG. 12 is a diagram for explaining threshold value determination. FIG. 13 is a diagram for explaining threshold value determination. FIG. 14 is a schematic diagram for explaining the first modification. FIG. 15 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus according to the second embodiment of the present invention. FIG. 16A is a diagram for explaining a falling flow rate transition pattern stored in the storage unit of FIG. 15. FIG. 16B is a diagram for explaining the rising flow rate transition pattern stored in the storage unit of FIG. 15. FIG. 16C is a diagram for explaining matching between the falling flow rate transition pattern and the rising flow rate transition pattern. FIG. 17A is a flowchart for explaining delay period setting. FIG. 17B is a flowchart for explaining the preliminary experiment. FIG. 18 is a block diagram for explaining a second modification. FIG. 19 is a flowchart for explaining delay period setting according to the third modification. FIG. 20 is a schematic diagram for explaining the delay period setting according to the third modification.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
<First Embodiment>
FIG. 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention as viewed from above. The substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W with a processing liquid and a rinsing liquid, and a load port on which a substrate container C that stores a plurality of substrates W processed by the processing unit 2 is placed. LP, an indexer robot IR and a substrate transfer robot CR that transfer the substrate W between the load port LP and the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1. The indexer robot IR transports the substrate W between the substrate container C and the substrate transport robot CR. The substrate transport robot CR transports the substrate W between the indexer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.

FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.

The processing unit 2 includes a box-shaped chamber 4 and a spin chuck that holds a single substrate W in the chamber 4 in a horizontal posture and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W. (Substrate holding unit) 5, a chemical solution supply unit 6 for supplying a chemical solution to the upper surface of the substrate W held by the spin chuck 5, and a rinsing solution supplied to the upper surface of the substrate W held by the spin chuck 5 A rinsing liquid supply unit 7, a hydrophobizing agent nozzle 8 for discharging the hydrophobizing agent to the upper surface of the substrate W held by the spin chuck 5, and a liquid hydrophobizing agent in the hydrophobizing agent nozzle 8. Hydrophobizing agent pipe 9 for supplying, hydrophobizing agent valve 10 for opening and closing the hydrophobizing agent pipe 9, and an organic solvent nozzle 11 for discharging the organic solvent onto the upper surface of the substrate W held by the spin chuck 5. Includes an organic solvent pipe 12 for supplying the liquid organic solvent to the organic solvent nozzle 11, and an organic solvent valve 13 for opening and closing the organic solvent pipe 12, and a cylindrical processing cup 14 surrounding the spin chuck 5.

The chamber 4 includes a box-shaped partition wall 15 that houses the spin chuck 5 and the like.

As the spin chuck 5, a clamping chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction is employed. Specifically, the spin chuck 5 includes a spin motor (rotary unit) 16, a spin shaft 17 integrated with a drive shaft of the spin motor 16, and a disc attached to the upper end of the spin shaft 17 substantially horizontally. And a spin base 18 having a shape.

The spin base 18 includes a horizontal circular upper surface 18a having an outer diameter larger than the outer diameter of the substrate W. Plural (three or more, for example, four or six) clamping members 19 are arranged on the peripheral portion of the upper surface 18a. The plurality of sandwiching members 19 are arranged, for example, at equal intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the periphery of the upper surface of the spin base 18.

Further, the spin chuck 5 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held on the spin chuck 5 may be employed.

The chemical solution supply unit 6 includes a chemical solution nozzle 20 that discharges the chemical solution downward toward the upper surface of the substrate W held by the spin chuck 5, a chemical solution pipe 21 that guides the chemical solution from the chemical solution supply source to the chemical solution nozzle 20, and a chemical solution. And a chemical liquid valve 22 for opening and closing the pipe 21. The chemical solution is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: tetramethylammonium hydroxide, etc.), And a liquid containing at least one of a surfactant and a corrosion inhibitor. When the chemical solution valve 22 is opened, the chemical solution is supplied from the chemical solution pipe 21 to the chemical solution nozzle 20. When the chemical liquid valve 22 is closed, the supply of the chemical liquid from the chemical liquid pipe 21 to the chemical liquid nozzle 20 is stopped. By moving the chemical nozzle 20, a chemical nozzle moving device is provided that moves the liquid deposition position of the chemical relative to the upper surface of the substrate W between the central portion of the upper surface of the substrate W and other portions (for example, the peripheral portion). It may be.

The rinsing liquid supply unit 7 discharges the rinsing liquid downward toward the upper surface of the substrate W held by the spin chuck 5, and guides the rinsing liquid from the rinsing liquid supply source to the rinsing liquid nozzle 23. A rinse liquid pipe 24 and a rinse liquid valve 25 that opens and closes the rinse liquid pipe 24 are included. The rinse liquid is, for example, pure water (deionized water).

When the rinse liquid valve 25 is opened, the rinse liquid is supplied from the rinse liquid pipe 24 to the rinse liquid nozzle 23. When the rinse liquid valve 25 is closed, the supply of the rinse liquid from the rinse liquid pipe 24 to the rinse liquid nozzle 23 is stopped. The rinse liquid is not limited to pure water, but may be any of carbonated water, electrolytic ionic water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm). Rinse liquid nozzle movement for moving the rinsing liquid landing position with respect to the upper surface of the substrate W between the central portion of the upper surface of the substrate W and other portions (for example, peripheral edge portions) by moving the rinsing liquid nozzle 23. An apparatus may be provided.

The hydrophobizing agent supplied to the hydrophobizing agent pipe 9 is a metal hydrophobizing agent that hydrophobizes metals. The hydrophobizing agent is a highly coordinating hydrophobizing agent. That is, the hydrophobizing agent is a solvent that hydrophobizes the metal mainly through coordination bonds. The hydrophobizing agent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound. The hydrophobizing agent may be a silicon-based hydrophobizing agent or a metal-based hydrophobizing agent.

Silicon hydrophobizing agents are hydrophobizing agents that hydrophobize silicon (Si) itself and silicon-containing compounds. The silicon hydrophobizing agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chlorohydrophobizing agent. Non-chloro hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis (dimethylamino) dimethylsilane, N, N-dimethylaminotrimethylsilane, N- (trimethylsilyl) ) Containing at least one of dimethylamine and an organosilane compound.

A metal-based hydrophobizing agent is a solvent that has a high coordination property, for example, and hydrophobizes the metal mainly through coordination bonds. The hydrophobizing agent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

More specifically, examples of the hydrophobizing agent include OSRA-A004, OSRA-7801, PK-HP-S, and PK-HUS.

Hydrophobizing agent valve 10 includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position.

The hydrophobizing agent pipe 9 is provided with a hydrophobizing agent flow meter 9A for detecting the flow rate of the hydrophobizing agent flowing through the hydrophobizing agent pipe 9 on the primary side thereof, that is, upstream of the hydrophobizing agent valve 10. Yes.

The treatment unit 2 includes a first suction device 9B interposed in the hydrophobizing agent pipe 9. The first suction device 9B is, for example, a diaphragm type suction device. The diaphragm type suction device includes a cylindrical head interposed in the middle of the pipe and a diaphragm housed in the head, and changes the volume of the flow path formed in the head by driving the diaphragm. This is a suction device having a known configuration. In the example of FIG. 2, the first suction device 9 B is configured as a separate device from the hydrophobizing agent valve 10, but may be provided using a part of the hydrophobizing agent valve 10.

The organic solvent supplied to the organic solvent pipe 12 is a solvent having a surface tension lower than that of water. The organic solvent may contain water. Specific examples of the organic solvent include alcohol and a mixed solution of a fluorinated solvent and alcohol. The alcohol includes, for example, at least one of methyl alcohol, ethanol, propyl alcohol, and IPA. The fluorine-based solvent includes, for example, at least one of HFE (hydrofluoroether) and HFC (hydrofluorocarbon). In the following description, a case where the organic solvent is IPA is taken as an example.

The organic solvent valve 13 includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position.

The organic solvent pipe 12 is provided with an organic solvent flow meter 12A for detecting the flow rate of the IPA flowing through the organic solvent pipe 12 on the primary side thereof, that is, on the upstream side of the organic solvent valve 13. A flow meter (hydrophobizing agent flow meter 9A, organic solvent flow meter 12A) is disposed upstream of the valves (hydrophobizing agent valve 10, organic solvent valve 13) in the piping (hydrophobizing agent piping 9, organic solvent piping 12). However, the upstream side of the valves (hydrophobizing agent valve 10 and organic solvent valve 13) is always kept in a liquid-tight state. Therefore, the measured flow rate of the flow meter (hydrophobizing agent flow meter 9A, organic solvent flow meter 12A) and the flow rate of the processing liquid (hydrophobizing agent, IPA) in the valves (hydrophobizing agent valve 10, organic solvent valve 13) Can be equated. Further, the distance between the discharge port 8a of the hydrophobizing agent nozzle 8 and the hydrophobizing agent valve 10 is not so different from the distance between the discharge port 11a of the organic solvent nozzle 11 and the organic solvent valve 13, and therefore the valve (hydrophobizing agent valve The flow rate of the processing liquid (hydrophobizing agent, IPA) in the valve 10 and the organic solvent valve 13) and the discharge of the processing liquid (hydrophobizing agent, organic solvent) from the nozzle (hydrophobizing agent nozzle 8, organic solvent nozzle 11). The flow rate can be equated.

The processing unit 2 includes a second suction device 12B interposed in the organic solvent pipe 12. The second suction device 12B is, for example, a diaphragm type suction device. In the example of FIG. 2, the second suction device 12 B is configured as a separate device from the organic solvent valve 13, but may be provided using a part of the organic solvent valve 13. In addition, a siphon type may be adopted as the first and

second suction devices

9B and 12B instead of the diaphragm type.

The processing cup 14 is disposed outward (in a direction away from the rotation axis A1) from the substrate W held by the spin chuck 5. The processing cup 14 surrounds the spin base 18. When a liquid such as a processing liquid, a rinsing liquid, or a protective liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the liquid supplied to the substrate W is shaken off around the substrate W. When these liquids are supplied to the substrate W, the upper end portion 14 a of the processing cup 14 is disposed above the spin base 18. Accordingly, the liquid discharged around the substrate W is received by the processing cup 14. Then, the liquid received by the processing cup 14 is sent to a recovery device or a waste liquid device (not shown).

FIG. 3 is a schematic longitudinal sectional view for explaining a configuration example of the common nozzle CN.

The processing unit 2 further includes a gas nozzle 32 for discharging a low humidity gas such as an inert gas above the substrate W held by the spin chuck 5, and a gas for supplying the low humidity gas to the gas nozzle 32. A pipe 30 and a gas valve 31 for opening and closing the gas pipe 30 are included.

In this embodiment, the hydrophobizing agent nozzle 8 and the organic solvent nozzle 11 are integrally coupled to the gas nozzle 32. That is, the gas nozzle 32 functions as the common nozzle CN. Therefore, the common nozzle CN functions as an organic solvent nozzle that discharges IPA, functions as a hydrophobizing agent nozzle that discharges a hydrophobizing agent, and functions as an inert gas nozzle that discharges an inert gas such as nitrogen gas. And.

The nozzle moving unit 29 for moving the common nozzle CN up and down and horizontally is coupled to the common nozzle CN. The nozzle moving unit 29 moves the common nozzle CN horizontally along an arcuate path passing through the center of the upper surface of the substrate W held by the spin chuck 5. Further, the nozzle moving unit 29 includes a processing position (position of the common nozzle CN shown in FIG. 9) above the central portion of the upper surface of the substrate W, and a home position where the common nozzle CN is retracted from the upper side of the substrate W to the side. Move between.

The gas nozzle 32 has a cylindrical nozzle body 34 having a flange portion 33 at the lower end. On the outer peripheral surface which is the side surface of the flange portion 33, an upper gas discharge port 35 and a lower gas discharge port 36 each open in an annular shape outward. The upper gas discharge port 35 and the lower gas discharge port 36 are arranged with a space in the vertical direction. A central gas discharge port 37 is disposed on the lower surface of the nozzle body 34.

In the nozzle body 34,

gas inlets

38 and 39 to which an inert gas is supplied from the gas pipe 30 are formed. Individual inert gas pipes may be coupled to the

gas inlets

38 and 39. In the nozzle body 34, a cylindrical gas flow path 41 that connects the gas introduction port 38, the upper gas discharge port 35, and the lower gas discharge port 36 is formed. In the nozzle body 34, a cylindrical gas flow path 42 communicating with the gas introduction port 39 is formed around the hydrophobizing agent nozzle 8 or the organic solvent nozzle 11. A buffer space 43 communicates below the gas flow path 42. The buffer space 43 further communicates with a space 45 below the punching plate 44. This space 45 is open to the central gas outlet 37. Examples of the low-humidity gas supplied to the

gas inlets

38 and 39 include an inert gas such as nitrogen gas (N2), but a low-humidity gas other than the inert gas, such as dry air or clean air, is employed. You can also.

The low-humidity gas introduced from the gas introduction port 38 is supplied to the upper gas discharge port 35 and the lower gas discharge port 36 via the gas flow path 41, and is supplied from the upper gas discharge port 35 and the lower gas discharge port 36. It is discharged radially. As a result, two radial airflows overlapping in the vertical direction are formed above the substrate W. On the other hand, the inert gas introduced from the gas introduction port 39 is stored in the buffer space 43 through the gas flow path 42, further diffused through the punching plate 44, and then through the space 45 to the central gas discharge port. It is discharged downward from 37 toward the upper surface of the substrate W. This inert gas hits the upper surface of the substrate W and changes its direction, forming a radial inert gas flow above the substrate W.

Therefore, the radial airflow formed by the inert gas discharged from the central gas discharge port 37 and the two layers of radial airflow discharged from the upper gas discharge port 35 and the lower gas discharge port 36 are combined into three layers. Is formed above the substrate W. The upper surface of the substrate W is protected by the three layers of radial airflow.

The hydrophobizing agent nozzle 8 extends vertically through the gas flow path 42, the buffer space 43 and the punching plate 44. The discharge port 8a at the lower end of the hydrophobizing agent nozzle 8 discharges the liquid hydrophobizing agent from above vertically toward the upper surface of the substrate W.

The organic solvent nozzle 11 passes through the gas flow path 42, the buffer space 43 and the punching plate 44 and extends in the vertical direction. The discharge port 11 a at the lower end of the organic solvent nozzle 11 discharges liquid IPA from above vertically toward the upper surface of the substrate W.

In the state where the common nozzle CN is disposed at the processing position (the position of the common nozzle CN shown in FIG. 7), the interval W1 between the lower surface of the common nozzle CN and the upper surface of the substrate W is, for example, about 5 mm. Further, the hydrophobizing agent discharged from the hydrophobizing agent nozzle 8 toward the upper surface of the substrate W in a state where the common nozzle CN is disposed at the processing position is deposited on the center of the upper surface of the substrate W. Further, IPA discharged from the organic solvent nozzle 11 toward the upper surface of the substrate W in a state where the common nozzle CN is disposed at the processing position is deposited on the center of the upper surface of the substrate W.

FIG. 4 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.

The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit 51 such as a CPU, a fixed memory device (not shown), a storage unit 52 such as a hard disk drive, and an input / output unit (not shown).

The storage unit 52 stores a program 53 executed by the arithmetic unit 51 and a recipe that defines the contents of each process for the substrate W. In addition, the storage unit 52 is provided with a delay period storage unit 54 for storing delay periods D1 and D2 described later. The delay period storage unit 54 includes a nonvolatile memory that can electrically rewrite data.

The input / output unit may be a reader / writer unit that performs writing / reading with respect to a recording medium capable of writing and reading data. The program 51 may be recorded on the recording medium. The recording medium may be an optical disk or a magnetic disk, or a portable memory such as a USB memory or a memory card. The input / output unit may include a communication unit. That is, for example, data input / output may be performed via a network.

The detection output from the hydrophobizing agent flow meter 9A is given to the control device 3. The control device 3 can detect the flow rate of the hydrophobizing agent flowing through the hydrophobizing agent pipe 9 based on this detection output. In addition, the detection output from the organic solvent flow meter 12A is given to the control device 3. The control device 3 can detect the flow rate of the IPA flowing through the organic solvent pipe 12 based on this detection output.

Further, the control device 3 controls the operations of the spin motor 16, the nozzle moving unit 29, and the first and

second suction devices

9B and 12B.

Further, the control device 3 controls the operations of the spin motor 16 and the nozzle moving unit 29. The control device 3 opens and closes the hydrophobizing agent valve 10, the organic solvent valve 13, the chemical liquid valve 22, the rinsing liquid valve 25, the gas valve 31, and the like.

Hereinafter, a case where the substrate W having a pattern formed on the surface which is a device forming surface is processed will be described.

FIG. 5 is an enlarged cross-sectional view showing the surface of the substrate W to be processed by the substrate processing apparatus 1. The substrate W to be processed is, for example, a silicon wafer, and a pattern P is formed on a surface (upper surface 62) that is a pattern forming surface thereof. The pattern P is a fine pattern, for example. In the pattern P, structures 61 having convex shapes (columnar shapes) may be arranged in a matrix. In this case, the line width W2 of the structure 61 is set to about 10 nm to 45 nm, for example, and the gap W3 of the pattern P is set to about 10 nm to about several μm, for example. The film thickness T of the pattern P is, for example, about 1 μm. Further, the pattern P may have an aspect ratio (ratio of the film thickness T to the line width W2), for example, of about 5 to 500 (typically about 5 to 50).

Further, the pattern P may be a linear pattern formed by fine trenches repeatedly arranged. Further, the pattern P may be formed by providing a plurality of fine holes (voids or pores) in the thin film.

The pattern P includes, for example, an insulating film. The pattern P may include a conductor film. More specifically, the pattern P is formed by a laminated film in which a plurality of films are laminated, and may further include an insulating film and a conductor film. The pattern P may be a pattern composed of a single layer film. The insulating film may be a silicon oxide film (SiO 2 film) or a silicon nitride film (SiN film). The conductor film may be an amorphous silicon film into which impurities for reducing resistance are introduced, or may be a metal film (for example, a metal wiring film).

Further, the pattern P may be a hydrophilic film. An example of the hydrophilic film is a TEOS film (a kind of silicon oxide film).

FIG. 6 is a flowchart for explaining a substrate processing example executed by the substrate processing apparatus 1. FIG. 7 is a schematic view of the substrate W viewed horizontally when shifting from the IPA supply step (S5) to the hydrophobizing agent supply step (S6).

The substrate processing example will be described with reference to FIGS.

The unprocessed substrate W is transported by the indexer robot IR and the substrate transport robot CR, is transported into the chamber 4, and the surface that is the device formation surface is directed upward, for example, to the spin chuck 5 accommodated in the chamber 4. And the substrate W is held on the spin chuck 5 (S1: substrate loading in FIG. 6). Prior to the loading of the substrate W, the common nozzle CN is retracted to a retracted position positioned laterally from above the substrate W. Further, the front end surface of the hydrophobizing agent inside the hydrophobizing agent pipe 9 and the front end surface of the IPA inside the organic solvent pipe 12 are retracted to the predetermined retreat positions.

Thereafter, the control device 3 starts the rotation of the substrate W by the spin motor 16 (S2 in FIG. 6; rotation process). The substrate W is raised to a predetermined liquid processing speed (within 300 to 1500 rpm, for example, 500 rpm) and maintained at the liquid processing speed.

When the rotation of the substrate W reaches the liquid processing speed, the control device 3 executes a chemical liquid process (S3 in FIG. 6) for supplying the chemical liquid to the upper surface of the substrate W. Specifically, the control device 3 opens the chemical liquid valve 22. Thereby, the chemical solution is supplied from the chemical solution nozzle 20 toward the upper surface of the substrate W in the rotating state. The supplied chemical solution is spread over the entire upper surface of the substrate W by centrifugal force, and the chemical treatment using the chemical solution is performed on the substrate W. When a predetermined period has elapsed from the start of the discharge of the chemical liquid, the control device 3 closes the chemical liquid valve 22 and stops the discharge of the chemical liquid from the chemical liquid nozzle 20. Thereby, a chemical | medical solution process (S3) is complete | finished.

Next, the control device 3 executes a rinsing step (S4 in FIG. 6) for replacing the chemical liquid present on the upper surface of the substrate W with the rinse liquid and removing the chemical liquid from the substrate W. Specifically, the control device 3 opens the rinse liquid valve 25. Thereby, the rinsing liquid is discharged from the rinsing liquid nozzle 23 toward the upper surface of the rotating substrate W. The discharged rinse liquid is spread over the entire upper surface of the substrate W by centrifugal force. The chemical liquid adhering to the substrate W is washed away by the rinse liquid.

Next, an IPA supply step of supplying IPA as an example of an organic solvent is performed on the upper surface of the substrate W (S5 in FIG. 6). In this IPA supply step (S5), the organic solvent (IPA) functions as a low surface tension liquid. Specifically, the control device 3 controls the nozzle moving unit 29 to move the common nozzle CN from the retracted position to above the substrate W. Further, the control device 3 controls the nozzle moving unit 29 to lower the common nozzle CN and arrange it at the processing position (position shown in FIG. 7). Then, the control device 3 opens the gas valve 31 and supplies the low-humidity gas to the three gas discharge ports (the upper gas discharge port 35 (see FIG. 3) and the lower gas discharge port 36 (see FIG. 3) of the gas nozzle 32. And the discharge is started from the central gas discharge port 37 (see FIG. 3). As a result, a three-layer annular airflow overlapping in the vertical direction is formed above the substrate W, and the upper surface of the substrate W is protected by the three-layer annular airflow (see also FIG. 7).

While rotating the substrate W by the spin chuck 5, the control device 3 opens the organic solvent valve 13 and discharges IPA from the organic solvent nozzle 11 toward the center of the upper surface of the substrate W. The IPA that has landed on the center of the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the upper surface of the substrate W. As a result, an IPA liquid film covering the entire upper surface of the substrate W is formed on the upper surface of the substrate W (the upper surface of the substrate W is covered with IPA. Organic solvent liquid film forming step). Thereby, the rinse liquid held on the substrate W is replaced with IPA. When a predetermined period has elapsed from the start of IPA discharge, the control device 3 closes the organic solvent valve 13 and stops IPA discharge. After the organic solvent valve 13 is closed, the control device 3 drives the second suction device 12B to suck a predetermined amount of IPA inside the organic solvent pipe 12. With the IPA suction, the tip surface of the IPA inside the organic solvent pipe 12 is retracted to a predetermined retracted position. The rinse liquid is removed from the substrate W by performing the IPA supply step (S5).

Next, a hydrophobizing agent supplying step of supplying a liquid hydrophobizing agent to the upper surface of the substrate W is performed (S6 in FIG. 6). Specifically, the control device 3 positions the common nozzle CN at the processing position, and further opens the hydrophobizing agent valve 10 while rotating the substrate W by the spin chuck 5 to discharge the hydrophobizing agent nozzle 8 from the discharge port 8a. The hydrophobizing agent is discharged from the top toward the center of the upper surface of the substrate W.

The hydrophobizing agent that has landed on the center of the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the upper surface of the substrate. Then, the IPA contained in the liquid film held on the substrate W is replaced with the hydrophobizing agent. Thereby, a liquid film of a hydrophobizing agent is formed on the upper surface of the substrate W to cover the entire area of the upper surface of the substrate W. By forming a liquid film of the hydrophobizing agent on the upper surface of the substrate W, the hydrophobizing agent enters deep into the pattern P, and the upper surface of the substrate W is hydrophobized (hydrophobizing treatment). When a predetermined period has elapsed from the start of the discharge of the hydrophobizing agent, the control device 3 closes the hydrophobizing agent valve 10 and stops the discharge of the hydrophobizing agent. After the hydrophobizing agent valve 10 is closed, the control device 3 drives the first suction device 9B to suck a predetermined amount of the hydrophobizing agent inside the hydrophobizing agent pipe 9. By suction of the hydrophobizing agent, the front end surface of the hydrophobizing agent inside the hydrophobizing agent pipe 9 is retracted to a predetermined retracted position.

Next, an IPA supply step for supplying IPA as an organic solvent to the upper surface of the substrate W is performed (S7 in FIG. 6). In this IPA supply step (S7), IPA functions as a desiccant.

Specifically, the control device 3 positions the common nozzle CN at the processing position (position shown in FIG. 7) and opens the organic solvent valve 13 while rotating the substrate W by the spin chuck 5 to IPA is discharged from 11 toward the center of the upper surface of the substrate W. Thereby, the IPA discharged from the organic solvent nozzle 11 is supplied to the entire upper surface of the substrate W. Therefore, most of the hydrophobizing agent held on the substrate W is washed away by the IPA. When a predetermined period has elapsed from the start of IPA discharge, the control device 3 closes the organic solvent valve 13 to stop IPA discharge. After the organic solvent valve 13 is closed, the control device 3 drives the second suction device 12B to suck a predetermined amount of IPA inside the organic solvent pipe 12. With the IPA suction, the tip surface of the IPA inside the organic solvent pipe 12 is retracted to a predetermined retracted position.

Next, the control device 3 executes a spin dry process (S8 in FIG. 6). Specifically, the control device 3 accelerates the substrate W to a predetermined spin dry speed (for example, several thousand rpm) larger than the liquid processing speed, and rotates the substrate W at the spin dry speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried.

When a predetermined period has elapsed from the start of high-speed rotation of the substrate W, the control device 3 controls the spin motor 16 to stop the rotation of the spin chuck 5 relative to the substrate W (S9 in FIG. 6).

Further, the control device 3 closes the gas valve 31 and stops the discharge of the low humidity gas from the three gas discharge ports of the gas nozzle 32. Further, the control device 3 controls the nozzle moving unit 29 to return the common nozzle CN to the retracted position.

Thereafter, the processed substrate W is unloaded from the spin chuck 5 by the robots IR and CR (S10 in FIG. 6).

FIG. 8 shows changes in the flow rate of treatment liquid (hydrophobizing agent and IPA) in the valves (hydrophobizing agent valve 10 and organic solvent valve 13) and the open / closed state of the valves (hydrophobizing agent valve 10 and organic solvent valve 13). FIG. FIG. 9 is an enlarged view of a main part of FIG.

8 and 9, the flow rate measured by the flow meter (hydrophobizing agent flow meter 9A, organic solvent flow meter 12A) is used as the treatment liquid (hydrophobizing agent) in the valves (hydrophobizing agent valve 10, organic solvent valve 13). And IPA). FIG. 9 also shows the total flow rate TF of the flow rate of IPA in the organic solvent valve 13 and the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10.

Hydrophobizing agent valve 10 is a type of valve that moves the valve body. Therefore, there is a time lag from the start of the opening operation of the hydrophobizing agent valve 10 until the hydrophobizing agent valve 10 is completely opened (the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 becomes a predetermined flow rate). . Further, there is a time lag from the start of the closing operation of the hydrophobizing agent valve 10 until the hydrophobizing agent valve 10 is completely closed (the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 becomes zero).

The organic solvent valve 13 is a type of valve that moves the valve body. Therefore, there is a time lag from the start of the opening operation of the organic solvent valve 13 until the organic solvent valve 13 is completely opened (the flow rate of IPA in the organic solvent valve 13 becomes a predetermined flow rate). There is a time lag from the start of the closing operation of the organic solvent valve 13 until the organic solvent valve 13 is completely closed (the IPA flow rate in the organic solvent valve 13 becomes zero).

The transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6) will be described.

The flow rate of IPA from the start of the closing operation of the organic solvent valve 13 to the complete closing thereof changes as described below. That is, with the start of the closing operation of the organic solvent valve 13, the IPA flow rate in the organic solvent valve 13 rapidly decreases. Thereafter, the flow rate of IPA in the organic solvent valve 13 approaches zero while reducing the gradient of the flow rate decrease. The time from the start of the closing operation of the organic solvent valve 13 to the complete closing of the organic solvent valve 13 is, for example, about 2 seconds.

Further, the flow rate of the hydrophobizing agent from the start of the opening operation of the hydrophobizing agent valve 10 to the complete opening thereof changes as described below. That is, as the opening operation of the hydrophobizing agent valve 10 starts, the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 increases rapidly. Thereafter, the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 approaches a predetermined flow rate while relaxing the gradient of the flow rate increase. The time from the start of the opening operation of the hydrophobizing agent valve 10 to the fully opening of the hydrophobizing agent valve 10 is, for example, about 2 seconds.

Hereinafter, at the time of transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6), the control device 3 sets the start timing of the opening operation of the hydrophobizing agent valve 10 and the start timing of the closing operation of the organic solvent valve 13. The timing is delayed by a predetermined delay period D1. The delay period D1 is, for example, a period of 0.6 sec to 2.0 sec. In particular, 0.8 sec or more and 1.4 sec or less are preferable.

The delay period D1 is set to be shorter than the time lag (the period of “PE1” shown in FIG. 8) from the start of the closing operation of the organic solvent valve 13 until the organic solvent valve 13 is completely closed. Therefore, the opening operation of the hydrophobizing agent valve 10 is started in a state where the organic solvent valve 13 is not completely closed (that is, in a state where the discharge of IPA from the organic solvent nozzle 11 is not completely stopped).

More specifically, the delay period D1 is set as follows. The timing at which the flow rate of IPA in the organic solvent valve 13 coincides with the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 (timing at which the flow rate intersection P1 in FIG. 9 is obtained (hereinafter referred to as “flow rate intersection timing”)) Pay attention to. The total flow rate TF of the flow rate of IPA in the organic solvent valve 13 and the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 at this flow rate crossing timing (hereinafter referred to as “total flow rate TF at the flow crossing point timing”) The delay period D1 is set to be less than the predetermined threshold Th. The delay period D1 is set as short as possible within a range in which the organic solvent and the hydrophobizing agent do not interfere with each other or interference is allowed in consideration of pattern collapse and particle contamination.

Threshold value Th is a predetermined value equal to or less than the flow rate of IPA in the organic solvent valve 13 immediately before the start of the closing operation of the organic solvent valve 13. More preferably, the threshold value Th is a predetermined value equal to or less than ½ of the flow rate of IPA in the organic solvent valve 13 immediately before the start of the closing operation of the organic solvent valve 13. The setting of the threshold Th will be described later with reference to FIGS.

Since the delay period D1 is an extremely short time, the period during which the IPA circulates through the organic solvent valve 13 (hereinafter referred to as the “IPA distribution period”) during the transition from the IPA supply process (S5) to the hydrophobizing agent supply process (S6). And the period during which the hydrophobizing agent flows through the hydrophobizing agent valve 10 (hereinafter, also referred to as “hydrophobizing agent distribution period”) overlaps. In this embodiment, a delay period D1 is provided in a period in which the IPA distribution period and the hydrophobizing agent distribution period overlap. In this case, as shown in FIG. 9, the transition of the total flow rate TF has a downwardly convex shape during the period in which the IPA circulation period and the hydrophobizing agent circulation period overlap.

Next, the transition from the hydrophobizing agent supply step (S6) to the IPA supply step (S7) will be described.

The flow rate of the hydrophobizing agent from the start of the closing operation of the hydrophobizing agent valve 10 until it is completely closed changes as described below. That is, with the start of the closing operation of the hydrophobizing agent valve 10, the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 rapidly decreases. Thereafter, the flow rate of the hydrophobizing agent in the hydrophobizing agent valve 10 approaches zero while reducing the gradient of the flow rate decrease. The time from the start of the closing operation of the hydrophobizing valve 10 to the complete closing of the hydrophobizing valve 10 is, for example, about 2 seconds.

In addition, the flow rate of IPA from the start of the opening operation of the organic solvent valve 13 to the complete opening thereof changes as described below. That is, with the start of the opening operation of the organic solvent valve 13, the flow rate of IPA in the organic solvent valve 13 increases rapidly. Thereafter, the flow rate of IPA in the organic solvent valve 13 approaches the predetermined flow rate while relaxing the gradient of the flow rate increase. The time from the start of the opening operation of the organic solvent valve 13 to the complete opening of the organic solvent valve 13 is, for example, about 2 seconds.

At the time of transition from the hydrophobizing agent supply step (S6) to the IPA supply step (S7), the control device 3 determines the opening timing of the opening operation of the organic solvent valve 13 from the starting timing of the closing operation of the hydrophobizing agent valve 10. Is delayed by a predetermined delay period D2. The delay period D2 is a period of 0.6 sec to 2.0 sec, for example. In particular, 0.8 sec or more and 1.4 sec or less are preferable.

The delay period D2 is set to be shorter than the time lag (the period of “PE2” shown in FIG. 8) from the start of the closing operation of the hydrophobizing agent valve 10 until the hydrophobizing valve 10 is completely closed. Therefore, the opening operation of the organic solvent valve 13 is started in a state in which the hydrophobizing agent valve 10 is not completely closed (that is, in a state in which the discharge of the hydrophobizing agent from the hydrophobizing agent nozzle 8 is not completely stopped). The

More specifically, the delay period D2 is set as follows. The total flow rate TF of the IPA flow rate in the organic solvent valve 13 and the hydrophobization agent flow rate in the hydrophobizing agent valve 10 at the flow rate intersection timing (hereinafter referred to as “total flow rate TF at the flow rate intersection timing”) is predetermined. The delay period D2 is set to be less than the threshold value Th. In addition, the delay period D2 is set as short as possible. The IPA flow rate and the hydrophobizing agent flow rate are measured by the organic solvent flow meter 12A and the hydrophobizing agent flow meter 9A, respectively.

As described above, according to this embodiment, at the time of transition from the IPA supply step (S5 in FIG. 6) to the hydrophobizing agent supply step (S6 in FIG. 6), the following operational effects are achieved.

That is, after the lapse of the delay period D1 from the start of the closing operation of the organic solvent valve 13, the timing at which the distribution of the organic solvent is not completely stopped in the organic solvent valve 13 (the discharge of IPA from the organic solvent nozzle 11 is completely completed). The opening operation of the hydrophobizing agent valve 10 is started at the timing (not stopped).

Since the start of the opening operation of the hydrophobizing agent valve 10 is delayed from the start of the closing operation of the organic solvent valve 13, the period in which the IPA and the hydrophobizing agent interfere on the substrate W is short. Therefore, it is possible to suppress or prevent the occurrence of liquid splash and large liquid turbulence associated with interference between the IPA and the hydrophobizing agent. Therefore, pattern collapse and particle contamination at the center of the upper surface of the substrate W can be effectively suppressed. Further, since the opening operation of the hydrophobizing agent valve 10 is started at a timing at which the discharge of IPA from the organic solvent nozzle 11 is not completely stopped, it is performed on the substrate W until the hydrophobizing agent is supplied. IPA can be suppressed or prevented from drying. Thereby, the IPA supply step (S5) while suppressing or preventing the occurrence of liquid splash and large liquid disturbance caused by interference between the IPA and the hydrophobizing agent, and suppressing or preventing the drying of the IPA on the substrate W. To the hydrophobizing agent supply step (S6).

Further, the delay period D1 is set so that the total flow rate TF at the flow rate intersection timing (that is, the total flow rate of the discharge flow rate of the IPA and the discharge flow rate of the hydrophobizing agent) is less than the threshold Th. The threshold value Th is a predetermined value equal to or less than the IPA flow rate (that is, the IPA discharge flow rate) in the organic solvent valve 13 immediately before the start of the closing operation of the organic solvent valve 13 (more preferably, 1 / of the IPA flow rate. 2 or a predetermined value). Since the total flow rate TF is set to be less than the threshold value Th, a large liquid splash does not occur on the substrate W due to the interference between the IPA and the hydrophobizing agent. Therefore, it is possible to suppress or prevent the occurrence of liquid splashing or large liquid disturbance during the transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6).

Also, the transition from the hydrophobizing agent supply step (S6) to the IPA supply step (S7 in FIG. 6) is equivalent to the transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6). Has the effect of.

FIG. 10 shows opening and closing of valves (hydrophobizing agent valve 10 and organic solvent valve 13) and valves (hydrophobizing) at the time of transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6) according to the reference embodiment. It is a figure which shows transition of the flow volume of the process liquid (IPA, hydrophobizing agent) in the agent valve | bulb 10 and the organic solvent valve | bulb 13).

The reference embodiment is different from the embodiment (first embodiment) shown in FIGS. 1 to 9 in that the delay period D1 is changed during the transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6). The control device 3 synchronizes the start timing of the opening operation of the hydrophobizing agent valve 10 and the start timing of the closing operation of the organic solvent valve 13 without providing the above.

Since the start timing of the opening operation of the hydrophobizing agent valve 10 and the start timing of the closing operation of the organic solvent valve 13 are synchronized, at the time of transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6). The IPA distribution period and the hydrophobizing agent distribution period overlap. In this case, as shown in FIG. 11, the transition of the total flow rate TF has an upwardly convex shape during the period in which the IPA circulation period and the hydrophobizing agent circulation period overlap. In this case, the total flow rate TF at the flow rate intersection point exceeds the flow rate of the IPA in the organic solvent valve 13 immediately before the start of the closing operation of the organic solvent valve 13. In other words, the total flow rate TF at the flow rate intersection timing exceeds the threshold Th.

In this case, since the total flow rate of the hydrophobizing agent and IPA discharged to the center of the upper surface of the substrate W is large, the IPA and the hydrophobizing agent interfere with each other at the center of the upper surface of the substrate W, causing liquid splashing or large liquid. Disturbance may occur. Then, due to the liquid splash and large liquid disturbance, the supply of the hydrophobizing agent is hindered, so that sufficient hydrophobicity is not performed at the center of the upper surface of the substrate W, and the substrate W rotates at high speed during drying. May cause pattern collapse.

Further, in the state where the common nozzle CN is disposed at the processing position (the position of the common nozzle CN shown in FIG. 7), since the space between the lower surface of the common nozzle CN and the upper surface of the substrate W is narrow, the liquid splashed hydrophobicity Agent and IPA adhere to the lower surface of the common nozzle CN. Then, during drying, it is conceivable that droplets or particles generated by solidifying the droplets adhere to the upper surface of the substrate W, thereby causing particle contamination at the center of the upper surface of the substrate W.

Further, the start timing of the opening operation of the organic solvent valve 13 and the start timing of the closing operation of the hydrophobizing agent valve 10 are synchronized during the transition from the hydrophobizing agent supply step (S6) to the IPA supply step (S7). In this case, the IPA and the hydrophobizing agent may interfere with each other, which may cause liquid splash and large liquid disturbance. Further, due to these liquid splashes and large liquid disturbances, the supply of IPA is hindered so that sufficient replacement with IPA cannot be performed, and pattern collapse may occur due to high-speed rotation of the substrate during drying. . In addition, there is a problem of particle contamination as described above when shifting from the hydrophobizing agent supply step (S6) to the IPA supply step (S7).

12 and 13 are diagrams for explaining the determination of the threshold Th.

The threshold value Th is obtained by a preliminary experiment using the substrate processing apparatus 1. Details of the preliminary experiment will be described later. Hereinafter, the delay period including the delay period D1 and the delay period D2 may be collectively referred to as a delay period D.

In the preliminary experiment, the operator changes the delay period D among a plurality of periods (three types of periods of 0.2 sec, 0.4 sec, and 0.6 sec in the example of FIG. 13) while changing the substrate W (for sample). Substrate). Then, the operator determines whether the product is non-defective based on the state of the substrate W after processing. The operator determines, as a threshold value Th, the highest value among the threshold values corresponding to all the delay periods D determined to be non-defective products through a prior experiment.

This will be specifically described with reference to FIG. Assume that the delay periods determined to be non-defective “OK” are 0.4 sec and 0.6 sec. At this time, the value of the flow rate intersection P1 is larger when the delay period is 0.4 sec than when the delay period is 0.6 sec (see FIG. 12). In this case, the value corresponding to the case where the delay period is 0.4 sec, that is, the value of the total flow rate TF at the flow rate intersection P1 (that is, the flow rate twice the flow rate at the flow rate intersection P1) is determined as the threshold Th. In other words, the threshold value Th is the maximum total flow rate TF at the flow rate intersection P1 that is allowed in consideration of pattern collapse and particles. Furthermore, in other words, as shown in FIG. 12, the flow rate intersection P1 coincides with half of the threshold Th (1/2 · Th).

The operator sets the delay period D based on the threshold value Th thus determined. Specifically, the delay period D is set so that the total flow rate TF at the flow rate intersection timing is less than the threshold Th, and the delay period D is stored in the delay period storage unit 54. The delay period D may be directly input to the control device 3 by the operator's operation based on the result of the preliminary experiment and stored in the delay period storage unit 54 (in the case of the above example, 0.4 sec. Is input as the delay period D).

FIG. 14 is a schematic diagram for explaining a configuration example of the common nozzle CN in the first modification example according to the first embodiment. In the first modification, other configurations are the same as those described in the first embodiment. Regarding the implementation of the present invention, as shown in FIG. 14, the hydrophobizing agent flow meter 9 A may be interposed on the secondary side of the hydrophobizing agent pipe 9, that is, on the downstream side of the hydrophobizing agent valve 10. Further, the organic solvent flow meter 12 A may be interposed on the secondary side of the organic solvent pipe 12, that is, on the downstream side of the organic solvent valve 13. The first modification shown in FIG. 14 is also applicable to the second embodiment described below.
<Second Embodiment>
FIG. 15 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 201 according to the second embodiment of the present invention.

The substrate processing apparatus 201 according to the second embodiment is different from the substrate processing apparatus 1 according to the first embodiment in that the storage unit 52 includes a threshold storage unit in addition to the program 53 and the delay period storage unit 54. 211 and the flow rate transition information storage unit 212. Since other points are common to the substrate processing apparatus 1 according to the first embodiment, the same reference numerals are given to the respective components, and the description thereof is omitted. In the second embodiment, the control device 3 functions as an information acquisition control device and a delay period setting unit.

The threshold storage unit 211 stores a threshold Th. The threshold storage unit 211 stores a threshold Th obtained by a preliminary experiment (described later) using the substrate processing apparatus 1.

The flow rate transition information storage unit 212 stores a falling flow rate transition pattern (first flow rate transition information) FC1 and a rising flow rate transition pattern (second flow rate transition information) FC2 described below. The falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 are patterns used for matching as will be described later.

FIG. 16A is a diagram for explaining the falling flow rate transition pattern FC1. The falling flow rate transition pattern FC1 is a pattern representing a temporal change in the discharge flow rate of the first processing liquid from the first nozzle (for example, the discharge flow rate of the organic solvent from the organic solvent nozzle 11). The falling flow rate transition pattern FC1 represents a change over time in the discharge flow rate from the start of the closing operation of the processing liquid valve (for example, the organic solvent valve 13). The falling flow rate transition pattern FC1 is obtained by a preliminary experiment (described later) using the substrate processing apparatus 1, and is stored in the flow rate transition information storage unit 212 by the control device 3 of the substrate processing apparatus 1.

FIG. 16B is a diagram for explaining the rising flow rate transition pattern FC2. The rising flow rate transition pattern FC2 is a pattern representing a temporal change in the discharge flow rate of the second processing liquid from the second nozzle (for example, the discharge flow rate of the hydrophobizing agent from the hydrophobizing agent nozzle 8). The rising flow rate transition pattern FC2 represents a change over time in the discharge flow rate from the start of the opening operation of the second valve (for example, the hydrophobizing agent valve 10). The rising flow rate transition pattern FC2 is obtained by a preliminary experiment (described later) using the substrate processing apparatus 1, and is stored in the flow rate transition information storage unit 212 by the control device 3 of the substrate processing apparatus 1.

Since the threshold value Th, the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 are respectively obtained by a preliminary experiment using the substrate processing apparatus 1, and the delay period D is calculated using them, the substrate processing apparatus The influence of the piping configuration (the distance between the discharge port 8a of the hydrophobizing agent nozzle 8 and the hydrophobizing agent valve 10 and the distance between the discharge port 11a of the organic solvent nozzle 11 and the organic solvent valve 13 are different). Thus, the delay period D can be obtained satisfactorily.

FIG. 16C is a diagram for explaining the matching between the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2. FIG. 17A is a flowchart for explaining delay period setting.

The arithmetic unit 51 reads the threshold value Th from the threshold value storage unit 211 (S11 in FIG. 17A), and the arithmetic unit 51 pattern-matches the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 with respect to the time axis direction. (S12 in FIG. 17A).

In this embodiment, the waveform of the rising flow rate transition pattern FC2 is matched with the waveform of the falling flow rate transition pattern FC1. The rising flow rate transition pattern FC2 at which the rising start time is the same as the falling flow rate transition pattern FC1 is defined as a reference pattern (represented by a solid line in FIG. 16C).

In the pattern matching (S12), the rising flow rate transition pattern FC2 is slid in the time axis direction. When the rising flow rate transition pattern FC2 is slid to the left, the flow rate at the flow rate intersection P1 (that is, the height position of the flow rate intersection P1) decreases. When the rising flow rate transition pattern FC2 is slid to the right, the flow rate at the flow rate intersection P1 increases.

Then, the rising flow rate transition pattern FC2 is arranged so that the total flow rate TF at the flow rate intersection point P1 (that is, the flow rate twice the flow rate at the flow rate intersection point P1) is within the threshold Th and becomes maximum. The arithmetic unit 51 calculates a deviation amount in the time axis direction from the reference pattern of the rising flow rate transition pattern FC2 (represented by a one-dot chain line in FIG. 16C) at that time as the delay period D. The shortest time can be selected as the delay period D by arranging the rising flow rate transition pattern FC2 at a position where the flow rate at the flow rate intersection P1 is maximized.

The arithmetic unit 51 stores the calculated delay period D in the delay period storage unit 54 (S14 in FIG. 17A).

FIG. 17B is a flowchart for explaining a preliminary experiment performed using the substrate processing apparatus 1.

This preliminary experiment is an experiment for the control device 3 to acquire the threshold value Th. This preliminary experiment is also an experiment for the control device 3 to acquire the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2. In this preliminary experiment, a sample substrate is used as a substrate to be processed.

The sample substrate is carried into the chamber 4 and held by the spin chuck 5 accommodated in the chamber 4 with the surface that is the device formation surface facing upward, for example.

In this state, in the chamber 4, steps equivalent to the respective steps shown in the substrate processing example (S 2 to S 9 in FIG. 6) are performed on the sample substrate (S 21 in S 17 B). That is, the IPA supply step (S5), the hydrophobizing agent supply step (S6), and the IPA supply step (S7) are sequentially performed on the sample substrate.

The processing conditions such as the processing time of each process (S2 to S9) and the rotation speed of the sample substrate in each process (S2 to S9) are the same as the processing conditions in the above-described substrate processing example (FIG. 6). Of course, the IPA discharge flow rate in the IPA supply step (S5, S7) and the hydrophobization agent discharge flow rate in the hydrophobizing agent supply step (S6) are the same as those in the substrate processing example (FIG. 6). is there.

The preliminary experiment is performed a plurality of times while changing the delay period D (see FIG. 16C) while keeping other conditions the same.

In this preliminary experiment, the falling flow rate transition pattern FC1 is acquired (S22 in FIG. 17B). Specifically, when the organic solvent valve 13 is closed, the control device 3 refers to the measurement value output from the organic solvent flow meter 12 A, and uses the measurement value output from the organic solvent flow meter 12 A to Sampling is performed in association with the time from the start of the closing operation. The control device 3 acquires a falling flow rate transition pattern FC1 representing a temporal change in the measured value of IPA based on the sampled measured values, and stores the falling flow rate transition pattern FC1 in the flow rate transition information storage unit 212. .

In this preliminary experiment, the rising flow rate transition pattern FC2 is acquired (S23 in FIG. 17B). Specifically, when the hydrophobizing agent valve 10 is opened, the control device 3 refers to the measurement value output from the hydrophobizing agent flow meter 9A, and hydrophobizes the measurement value output from the hydrophobizing agent flow meter 9A. Sampling is performed in association with the time from when the opening operation of the agent valve 10 is started. The control device 3 acquires a rising flow rate transition pattern FC2 representing a temporal change in the measured value of the hydrophobizing agent based on the sampled measured values, and stores this rising flow rate transition pattern FC2 in the flow rate transition information storage unit 212. .

Then, the operator observes the sample substrate obtained by the preliminary experiment in the same manner as described in FIGS. 12 and 13, and determines whether or not it is a non-defective product. The operator has the highest threshold value (the total flow rate TF at the flow rate intersection P1 (that is, the flow rate twice as high as the flow rate at the flow rate intersection P1)) corresponding to all the delay periods determined to be non-defective products by the prior experiment. The value is determined as the threshold Th. The threshold value Th thus determined is input to the control device 3 by the operator's operation. The input threshold value Th is stored in the threshold value storage unit 211 (S24 in FIG. 17B).

As described above, according to the second embodiment, the control device 3 starts the opening operation of the second valve (hydrophobizing agent valve 10) from the start of the closing operation of the first valve (organic solvent valve 13). The delay period D until is set. The falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 are different for each substrate processing apparatus 1 that performs substrate processing or for each processing condition. The delay period D is set such that the total flow rate TF is equal to or less than the threshold value Th by matching using the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2, so that it corresponds to the substrate processing apparatus 1 and processing conditions. A good delay period D can be easily provided. Moreover, since the delay period D is obtained by matching, it is possible to relatively easily provide the delay period D such that the total flow rate TF at the flow rate intersection P1 is within the threshold value Th and becomes the maximum.

In addition, since the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 are acquired based on a preliminary experiment using the substrate processing apparatus 1 (that is, since it is an actual measurement value), the individual difference between the substrate processing apparatuses 1 is increased. A good delay period D that has been eliminated can be set.

Further, the shortest period among the periods in which the total flow rate TF is equal to or less than the threshold value Th is set as the delay period D. In other words, the shortest possible period is set as the delay period D. Thereby, it is possible to shift from the first processing liquid processing (organic solvent supply step (S5)) to the second processing liquid processing (hydrophobizing agent supply step (S6)) without causing the substrate W to run out of liquid. It is.

FIG. 18 is a block diagram for explaining a modified example (second modified example) according to the second embodiment.

As in the substrate processing apparatus 1, in the substrate processing apparatus 1 having a plurality of chambers 4, piping (hydrophobizing agent piping 9 and organic solvent piping 12) is different if the chamber 4 is different. Further, the distance from the valve (hydrophobizing agent valve 10, organic solvent valve 13) to the

discharge ports

8 a and 11 a may be different for each chamber 4. Due to these, the opening and closing operation of the valves (hydrophobizing agent valve 10 and organic solvent valve 13) and the transition of the discharge flow rate of the processing liquid from the

discharge ports

8a and 11a during the opening and closing operation (valve (hydrophobizing agent valve 10, the transition of the flow rate of the treatment liquid in the organic solvent valve 13) may vary from one chamber 4 to another.

Therefore, in the second modification, each chamber 4 is provided with a falling flow rate transition pattern FC1 and a rising flow rate transition pattern FC2 in association with each other. Therefore, the delay period D is also different for each chamber 4. In this case, the threshold Th is a value common to the chambers 4.

Thereby, the transition of the flow rate of the processing liquid discharged from the

discharge ports

8a and 11a (the transition of the flow rate of the processing liquid in the valves (hydrophobizing agent valve 10 and organic solvent valve 13)) varies from one chamber 4 to another. In addition, it is possible to suppress or prevent pattern collapse and generation of particles during the transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6).

In this case, since the threshold value Th is common, a large preliminary experiment (preliminary experiment described with reference to FIG. 17B) for obtaining the threshold value Th needs to be performed only in one chamber 4, and the other chambers 4 A prior experiment for obtaining the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 is sufficient. If it is a preliminary experiment only to obtain the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2, it is sufficient to open and close the valves (hydrophobizing agent valve 10 and organic solvent valve 13) under the processing conditions. And can be done in a short time. Therefore, the burden on the operator accompanying the preliminary experiment is small.

FIG. 19 is a flowchart for explaining the delay period setting according to the modification example (third modification example) according to the second embodiment. FIG. 20 is a schematic diagram for explaining the delay period setting according to the third modification.

In the third modification, the delay period D is set in parallel with the execution of the substrate processing example in the chamber 4 (real-time setting).

The arithmetic unit 51 reads the threshold value Th from the threshold value storage unit 211 (S31 in FIG. 19). The arithmetic unit 51 samples (monitors) the measurement value output from the organic solvent flow meter 12A (S32 in FIG. 19). When the closing operation of the organic solvent valve 13 is started, the measured value by the organic solvent flow meter 12A rapidly decreases. At a predetermined timing after the closing operation of the organic solvent valve 13 is started ("current time" shown in FIG. 20), the arithmetic unit 51 generates an IPA pattern representing a time change of the IPA measurement value based on the sampled measurement value. create. Further, the arithmetic unit 51 pattern-matches the created IPA pattern to the waveform of the falling flow rate transition pattern FC1 stored in the flow rate transition information storage unit 212. In this pattern matching, the falling flow rate transition pattern FC1 is slid in the time axis direction, and both patterns are pattern-matched so that the deviation of the waveforms of both patterns is reduced. Thereby, the future transition of the discharge flow rate of IPA is predicted at the present time (S33 in FIG. 19).

Then, the arithmetic unit 51 pattern-matches the future transition of the predicted IPA discharge flow rate and the rising flow rate transition pattern FC2 in the time axis direction (S34 in FIG. 19). This matching is performed using the same method as in S12 of FIG. 17A.

Then, the rising flow rate transition pattern FC2 is arranged so that the total flow rate TF at the flow rate intersection point P1 (that is, the flow rate twice the flow rate at the flow rate intersection point P1 is within the threshold value Th and becomes maximum, and the delay period D is calculated. (S35 in FIG. 19) After that, the arithmetic unit 51 stores the calculated delay period D in the delay period storage unit 54 (S36 in FIG. 19).

In this case, the future transition of the IPA discharge flow rate is predicted based on the current IPA discharge flow rate being measured. Then, based on the predicted falling flow rate transition and the acquired rising flow rate transition pattern FC2, the delay period D is set in parallel with the progress of the substrate processing. Thereby, it is possible to set a favorable delay period D most suitable for the processing conditions of the ongoing substrate processing.

In the above description of the second embodiment, the opening and closing of the valves (hydrophobizing agent valve 10 and organic solvent valve 13) during the transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6) is an example. And explained. However, the second embodiment can also be applied to opening and closing the valves (hydrophobizing agent valve 10 and organic solvent valve 13) during the transition from the hydrophobizing agent supply step (S6) to the IPA supply step (S7). it can.

Further, the threshold Th is different between the transition from the IPA supply step (S5) to the hydrophobizing agent supply step (S6) and the transition from the hydrophobizing agent supply step (S6) to the IPA supply step (S7). You may make it let.

As mentioned above, although two embodiments and three modifications of the present invention have been described, the present invention can also be implemented using other embodiments.

For example, the preliminary experiment for the control device 3 to acquire the threshold Th and the preliminary experiment for the control device 3 to acquire the falling flow rate transition pattern FC1 and the rising flow rate transition pattern FC2 are performed individually, not collectively. It can also be done.

In the second embodiment, the rising flow rate transition pattern FC2 may be data created in advance, not actual measurement data obtained by a preliminary experiment using the substrate processing apparatus 1. At the start of the opening operation of the valve (hydrophobizing agent valve 10, organic solvent valve 13), the front end surface of the processing liquid (IPA, hydrophobizing agent) is retracted, and the valve (hydrophobizing agent valve 10, organic solvent valve) There is not much difference in the behavior (IPA, hydrophobizing agent) of the processing liquid flowing through the valves (hydrophobizing agent valve 10 and organic solvent valve 13) after the start of the opening operation of 13). Therefore, the rising flow rate transition pattern FC2 may be data created in advance instead of actual measurement data.

Further, the threshold value Th may be a value given in advance instead of a value determined using a prior experiment using the substrate processing apparatus 1.

In the first and second embodiments, the nozzles (hydrophobizing agent nozzle 8 and organic solvent nozzle 11) are provided not on the common nozzle CN but on a blocking member facing substantially above the entire area of the upper surface of the substrate W. It may be.

In the above-described embodiment, the case where the substrate processing apparatus 1 is an apparatus for processing the surface of the substrate W made of a semiconductor wafer has been described. However, the substrate processing apparatus is a substrate for a liquid crystal display device, an organic EL (electroluminescence) display. Even devices that process substrates such as FPD (Flat Panel DiDiplay) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, solar cell substrates, etc. Good.

Other various design changes can be made within the scope of the matters described in the claims.

This application corresponds to Japanese Patent Application No. 2018-84444 filed with the Japan Patent Office on April 25, 2018, the entire disclosure of which is incorporated herein by reference.

1: Substrate processing device 2: Processing unit 3: Control device 4: Chamber 5: Spin chuck (substrate holding unit)
8: Hydrophobizing agent nozzle (the other of the first nozzle and the second nozzle)
9: Hydrophobizing agent pipe (the other of the first pipe and the second pipe)
9A: Hydrophobizing agent flow meter 10: Hydrophobizing agent valve (the other of the first valve and the second valve)
11: Organic solvent nozzle (one of the first nozzle and the second nozzle)
12: Organic solvent piping (one of the first piping and the second piping)
12A: Organic solvent flow meter (flow meter)
13: Organic solvent valve (one of the first valve and the second valve)
51: arithmetic unit 52: storage unit 54: delay period storage unit 201: substrate processing apparatus 211: threshold value storage unit 212: flow rate transition information storage unit D: delay period D1: delay period D2: delay period FC1: falling flow rate transition pattern (First flow rate transition information)
FC2: rising flow rate transition pattern (second flow rate transition information)
P1: Flow intersection point TF: Total flow Th: Threshold W: Substrate

Claims

A substrate holding unit for holding a substrate;
A first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit;
A first pipe for supplying a first treatment liquid to the first nozzle;
A first valve for opening and closing the first pipe;
A second nozzle for discharging a second processing liquid toward the substrate held by the substrate holding unit, the nozzle being different from the first nozzle;
A second pipe for supplying a second processing liquid to the second nozzle;
A second valve for opening and closing the second pipe;
A control device for controlling opening and closing of the first valve and the second valve,
In the state where the first processing liquid is being discharged from the first nozzle, the control device closes the first valve in the open state, and closes the first valve. A second opening operation for starting the opening operation of the second valve in a state where the discharge of the first processing liquid from the first nozzle is not completely stopped after a delay period has elapsed from the start of the operation; A substrate processing apparatus that executes the process.
The second opening operation step includes a step of starting the opening operation of the second valve in a state where the flow of the first processing liquid in the first valve is not completely stopped. The substrate processing apparatus as described.
In the state in which the delay period coincides with the discharge flow rate of the first treatment liquid from the first nozzle and the discharge flow rate of the second treatment liquid from the second nozzle, The total flow rate of the discharge flow rate and the discharge flow rate of the second treatment liquid is provided to be equal to or less than a predetermined threshold value,
The substrate processing apparatus according to claim 1, wherein the predetermined threshold is a value lower than a discharge flow rate of the first processing liquid.
The delay period includes first flow rate transition information on the transition of the discharge flow rate of the first processing liquid after the start of the closing operation of the first valve, and the first flow rate information after the start of the opening operation of the second valve. The substrate processing apparatus according to claim 3, wherein the total flow rate is set to be equal to or less than the threshold value based on second flow rate transition information regarding a transition of the discharge flow rate of the second processing liquid.
4. The substrate processing apparatus according to claim 3, wherein the threshold value is a value obtained by an experiment using the substrate processing apparatus.
A storage unit for storing a predetermined period as the delay period;
The substrate processing apparatus according to claim 1, wherein the control device executes the second opening operation step based on the delay period stored in the storage unit.
The first treatment liquid contains one of a hydrophobizing agent and an organic solvent,
The substrate processing apparatus according to claim 1, wherein the second processing liquid includes the other of a hydrophobizing agent and an organic solvent.
A substrate holding unit for holding a substrate;
A first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit;
A first pipe for supplying a first treatment liquid to the first nozzle;
A first valve for opening and closing the first pipe;
A second nozzle for discharging a second processing liquid toward the substrate held by the substrate holding unit;
A second pipe for supplying a second processing liquid to the second nozzle;
A second valve for opening and closing the second pipe;
A delay period setting unit that sets a delay period from the start of the closing operation of the first valve to the start of the opening operation of the second valve;
The delay period setting unit includes first flow rate transition information about a transition of a discharge flow rate of the first processing liquid from the first nozzle after the start of the closing operation of the first valve, and the second flow rate information. The delay period is calculated based on the second flow rate transition information about the transition of the discharge flow rate of the second processing liquid from the second nozzle after the start of the valve opening operation, and the delay period is set. Substrate processing equipment.
An information acquisition control device for controlling opening and closing of the first valve and the second valve in order to acquire the first flow rate transition information and the second flow rate transition information;
The substrate processing apparatus according to claim 8, wherein the delay period setting unit sets the delay period based on the acquired first flow rate transition information and the acquired second flow rate transition information.
An information acquisition control device for controlling opening and closing of the first valve and the second valve in order to acquire the first flow rate transition information and the second flow rate transition information;
A flow meter for measuring the discharge flow rate of the first treatment liquid;
A prediction unit that predicts a future transition of the discharge flow rate of the first processing liquid based on the discharge flow rate measured by the flow meter and the acquired first flow rate transition information;
The substrate processing apparatus according to claim 8, wherein the delay period setting unit sets the delay period based on the future transition predicted by the prediction unit and the acquired second flow rate transition information.
In the state where the delay period setting unit matches the discharge flow rate of the first processing liquid and the discharge flow rate of the second processing liquid based on the first flow rate transition information and the second flow rate transition information. The delay period is set so that a total flow rate of the discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid is less than or equal to a threshold value. Substrate processing equipment.
12. The substrate processing apparatus according to claim 11, wherein the delay period setting unit sets the shortest period among the periods in which the total flow rate is equal to or less than a threshold as the delay period.
The substrate processing apparatus according to claim 10, wherein the threshold value is a value obtained by an experiment using the substrate processing apparatus.
The landing position of the second processing liquid from the second nozzle on the substrate is close to the landing position of the first processing liquid from the first nozzle on the substrate. 2. The substrate processing apparatus according to 2.
A substrate holding unit for holding a substrate, a first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit, and a first processing liquid at the first nozzle A first pipe that supplies the first pipe, a first valve that opens and closes the first pipe, and a nozzle different from the first nozzle, toward the substrate held by the substrate holding unit , A second nozzle for discharging the second processing liquid, a second pipe for supplying the second processing liquid to the second nozzle, and a second for opening and closing the second pipe A substrate processing method executed in a substrate processing apparatus including a valve,
A first closing operation step of closing the first valve in an open state in a state where the first processing liquid is being discharged from the first nozzle;
After the lapse of the delay period from the start of the first valve closing operation, the second valve opening operation is performed in a state where the discharge of the first processing liquid from the first nozzle is not completely stopped. And a second opening operation step to be started.
In the state in which the delay period coincides with the discharge flow rate of the first treatment liquid from the first nozzle and the discharge flow rate of the second treatment liquid from the second nozzle, The total flow rate of the flow rate and the flow rate of the second processing liquid is provided to be equal to or less than a predetermined threshold value
The substrate processing method according to claim 15, wherein the predetermined threshold is a value lower than a discharge flow rate of the first processing liquid.
The delay period includes first flow rate transition information about the transition of the discharge flow rate of the first processing liquid after the start of the closing operation of the first valve, and the first flow rate information after the start of the opening operation of the second valve. The substrate processing method according to claim 16, wherein the substrate processing method is provided so as to be equal to or less than the threshold based on second flow rate transition information regarding a transition of the discharge flow rate of the second processing liquid.
The first treatment liquid contains one of a hydrophobizing agent and an organic solvent,
The substrate processing method according to any one of claims 15 to 17, wherein the second processing liquid contains the other of a hydrophobizing agent and an organic solvent.
A substrate holding unit for holding a substrate, a first nozzle for discharging a first processing liquid toward the substrate held by the substrate holding unit, and a first processing liquid at the first nozzle A first valve for opening and closing the first pipe, a second valve for discharging the second processing liquid toward the substrate held by the substrate holding unit In the substrate processing apparatus, comprising: a nozzle; a second pipe that supplies a second processing liquid to the second nozzle; and a second valve that opens and closes the second pipe. A delay period setting method for setting a delay period from the start of the closing operation to the start of the opening operation of the second valve,
The delay period includes first flow rate transition information about a transition of the discharge flow rate of the first processing liquid from the first nozzle after the start of the closing operation of the first valve, and the second valve Based on the second flow rate transition information about the transition of the discharge flow rate of the second processing liquid from the second nozzle after the start of the opening operation, the discharge flow rate of the first processing liquid and the second processing liquid When the total discharge flow rate of the first treatment liquid and the discharge flow rate of the second treatment liquid is equal to or less than a threshold value in a state in which the discharge flow rates coincide with each other, the period is set as the delay period. How to set the delay period.
20. The delay period setting method according to claim 19, wherein the delay period setting method sets the shortest period among the periods in which the total flow rate is equal to or less than a threshold as the delay period.
From the start of the closing operation of the first valve that opens and closes the first pipe for supplying the first processing liquid to the first nozzle, the second nozzle that is a nozzle different from the first nozzle is used. A program for executing a delay period setting method for setting a delay period until the start of an opening operation of a second valve for opening and closing a second pipe for supplying a second processing liquid,
The delay period setting method includes the first flow rate transition information about the transition of the discharge flow rate of the first processing liquid from the first nozzle after the delay period starts the closing operation of the first valve. Based on the second flow rate transition information about the transition of the discharge flow rate of the second processing liquid from the second nozzle after the start of the opening operation of the second valve, the discharge of the first processing liquid In a state where the flow rate and the discharge flow rate of the second processing liquid coincide with each other, a period in which the total flow rate of the discharge flow rate of the first processing liquid and the discharge flow rate of the second processing liquid is equal to or less than a threshold value is calculated A program for setting the period as the delay period.