WO2019162041A1 - Stabilisation de contrainte dans une couche par rapport à une charge thermique - Google Patents

Stabilisation de contrainte dans une couche par rapport à une charge thermique Download PDF

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Publication number
WO2019162041A1
WO2019162041A1 PCT/EP2019/051895 EP2019051895W WO2019162041A1 WO 2019162041 A1 WO2019162041 A1 WO 2019162041A1 EP 2019051895 W EP2019051895 W EP 2019051895W WO 2019162041 A1 WO2019162041 A1 WO 2019162041A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
sputter
methods
depositing
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Application number
PCT/EP2019/051895
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English (en)
Inventor
Mohamed Elghazzali
Mike Hoffmann
Ben CURTIS
Original Assignee
Evatec Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evatec Ag filed Critical Evatec Ag
Publication of WO2019162041A1 publication Critical patent/WO2019162041A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Definitions

  • the present invention is generically directed on
  • the stress in a layer shall change as few as possible upon thermal loading of the layer by increased temperatures.
  • the need for stabilizing stress in a deposited layer with respect to thermal loading arises for instance as follows: Stress, tensile- or compressive, in a layer or multiple layers deposited on a substrate may greatly affect the overall characteristics of the system substrate/layer.
  • system may be present as a middling product it is often further treated by one or more than one additional process by which the system is heated, i.e. loaded
  • thermal loading e.g. to intense sun-exposure.
  • thermal loading e.g. to intense sun-exposure.
  • a vacuum process being a CVD or PVD process
  • deposited layer system as deposited, shows up to have an overall tensile- or compressive stress
  • the substrate is loaded with a bending stress which results in bowing or warping the system substrate/layer- system, if the system is not stiff enough to stand the bending stress.
  • Such bowing may be avoided if more than one respective layer systems are deposited on the substrate with respective stresses which lead to a resulting vanishing overall bending stress.
  • Such layer may be a functional layer e.g. with optical function and/or with electrical function or with a function in the frame of photolithography etc. This additionally to its object, namely, to compensate for unwanted effects of stress in the overall system as of a bow as addressed above.
  • the layer is sputter deposited, normally by magnetron sputtering.
  • the deposition further consists of:
  • pulsed- or AC type- operation per se of a respective parameter is not to be considered as "abruptly changing" .
  • the material, which is sputtered may consist of one single first element or of more than one first elements, may be a compound.
  • the material, which is deposited on the substrate may consist of one or more than one second elements.
  • the second elements do in any case include the one or more than one first elements.
  • the second elements may nevertheless include one or more than one element which are different from the first elements and which are fed to the sputter atmosphere by reactive gas or by reactive gas mixture.
  • the sputter atmosphere may or may not comprise a noble gas, which is not one of the second elements, as such noble gas is not or only in a neglectable amount, an element of the material which is deposited on the substrate.
  • the second elements may comprise one or more than one element which are first elements, but which are additionally also fed to the sputter atmosphere by a reactive gas or gas mixture.
  • a reactive gas or gas mixture E.g. an oxide may be sputtered and additionally oxygen may be fed to the sputter atmosphere as gas or in a gas mixture.
  • the substrate there is abruptly changed at least one of the sputter-deposition- process parameters. Thereby depositing the addressed second elements is ongoingly maintained, the deposited material ongoingly consists of the second elements .
  • the target material is not changed, as first elements are ongoingly deposited at least as a part of the second elements. If two or more targets are used, different or at least some different first elements may be co-sputtered from respective targets or the same elements may be sputtered from all targets as provided. Because, ongoingly, material consisting of the second elements is deposited, the generic characteristics of the deposited material are mostly kept substantially unchanged within a relatively narrow range. Such characteristics of the deposited layer may be optical, electrical etc.
  • composition of gas in the sputtering atmosphere is
  • the addressed abrupt change of the at least one sputter- deposition- process parameter leads in the layer being built up to a discontinuity, which stabilizes the overall layer with respect to a change of compressive or tensile stress.
  • the second elements comprise at least one element, which is fed into the sputter atmosphere as a gas or gas mixture.
  • reactive sputtering is performed, or the
  • stoichiometry of the deposited material is changed with respect to the stoichiometry of the material sputtered from the at least one target.
  • abruptly changing the at least one sputter- deposition- process parameter comprises or consists of abruptly
  • abruptly changing the partial pressure comprises or consists of abruptly changing the partial pressure of a noble gas in the sputter atmosphere.
  • the noble gas is at least one of Ar, He, Kr, Xe and Ne.
  • abruptly changing the sputter-deposition process parameter comprises or consists of switching a flow of a noble gas into the sputter atmosphere ON and/or OFF.
  • abruptly changing the sputter-deposition-process parameter comprises or consists of abruptly changing a noble gas type fed to said sputter atmosphere .
  • the noble gas type is changed between at least two of Ar, He, Kr, Xe and Ne.
  • One variant of the invention comprises performing abruptly changing more than once, staggered in time.
  • abruptly changing is performed more than once.
  • such abrupt changing is realized between two values or states or between more than two values or states of the addressed at least one sputter-deposition -process parameter .
  • the abrupt changings may be (A to B to A) , or (A to C to A) or (A to B to C) or (A to C to B) etc.
  • the first elements are selected out of the following group:
  • the second elements are selected to comprise at least one of nitrogen and of oxygen, fed to the sputter atmosphere as a gas or as a gas mixture.
  • a reactive gas fed to the sputter atmosphere consists of at least one of oxygen and of nitrogen.
  • One variant of the methods according to the invention comprises depositing upon said substrate, before depositing said layer, at least one further layer and compensating a bow of the combination of substrate and further layer, by the layer acting as a bow compensating layer.
  • invention comprises depositing upon the substrate, after depositing the layer, at least one further layer and compensating an anticipated bow of the substrate with the further layer, by the layer, acting as bow compensating layer .
  • depositing said further layer causes a temperature of said layer which is higher than the temperature of said layer before depositing said further layer .
  • the layer as deposited according to the invention is stabilized with respect to thermal loading, the
  • One variant of the methods according to the invention comprises applying the layer on the same side of the substrate, with respect to the side of the substrate whereupon the further layer is applied.
  • Another variant comprises applying the layer on the
  • At least a part of the layer and at least a part of the further layer are deposited
  • more than one of the addressed layers are deposited.
  • the one or more than one target/s is/are kept stationary with respect to the substrate during depositing.
  • the second elements consist of Si and N.
  • One variant of the methods according to the invention comprises performing the abrupt changing more than once and between two or between more than two values or states of the sputter-deposition- process parameters and wherein said layer is grown between subsequent of said abrupt changings with a thickness of between 3nm and lOOnm, both limits included.
  • the layer is deposited with a thickness of between 50mm and 500nm, both limits included.
  • the substrate is a silicon wafer.
  • Such wafer may have a diameter of 300 mm and even more.
  • the methods according to the invention may be combined with one or more than one of the variants as addressed, if not in contradiction.
  • the invention is further directed to a substrate with a layer which is deposited by a method according to the invention or at least one variant thereof.
  • the invention is further directed to a substrate with a layer, wherein the layer consists over its entire thickness of the same elements and comprises one or more than one material or morphologic unsteadiness- interface.
  • the present invention is further directed to a sputter deposition apparatus which comprises A target arrangement comprising at least one target;
  • a timing unit adapted to control at least one sputter- deposition-process parameter to abruptly change in a predetermined rhythm during sputter deposition of a layer on a substrate, thereby ongoingly depositing same chemical elements on the substrate.
  • the addressed apparatus it is adapted to perform the layer deposition methods as were addressed above .
  • Fig.2 In a representation in analogy to that of fig.l a variant of the methods according to the invention and representing in a simplified block diagrammatic manner an embodiment of the sputter apparatus according to the invention
  • Fig.3 In a representation in analogy to that of fig.l or fig.2 a variant of the methods according to the invention and representing in a simplified block diagrammatic manner an embodiment of the sputter apparatus according to the invention
  • Fig.4 In a representation in analogy to that of fig.l or fig.2 the variant of fig.3 as today practiced;
  • Fig.5 The structure of a layer on a substrate as
  • Fig.6 The stress characteristics of the layer according to fig.5 each, before and after thermal loading;
  • Fig.7 The stress characteristics of comparative layers before thermal loading
  • Fig.8 The stress characteristics of the comparative layers of fig.7 after thermal loading
  • Fig.9 schematically an effect of stress in a layer
  • Fig.10 The bow of a wafer with the layer according to fig.5 before and after thermal loading;
  • Fig.11 The bow of a wafer with the comparative layer before thermal loading
  • Fig.12 The bow of the wafer according to fig. 11 with the comparative layer after thermal loading
  • Fig.13 Schematically processing a substrate by first depositing a layer according to the invention and then depositing a further layer involving a thermally loading process .
  • sputter- deposition- process parameters is abruptly changed once or more than once, whereby the material, which is deposited upon the substrate is kept unchanged with respect to the chemical elements contained therein.
  • Sputter deposition-process- parameters which may be abruptly changed, may e.g. be selected out of the following group :
  • Partial pressure of one or more than one reactive gases Partial pressure of one or more than one reactive gases; a partial pressure of a reactive gas may not be changed to vanish unless the element introduced by such reactive gas is already present in the material sputtered from the target arrangement.
  • Fig. 1 there is schematically shown a variant of the methods according to the invention, as well as an
  • a material consisting of first elements En , E 12 ... is sputtered into the sputter atmosphere 3. These elements are simultaneously sputtered into the sputter atmosphere 3.
  • non-magnetically enhanced sputtering may be used, mostly magnetron sputtering is used.
  • the sputtered-off material may consist of only one of the first elements En , E 12 ... .
  • Ei (En, E 12 ...) , wherein Ei are the first elements.
  • the elements E21 , E2 2 , E23... are equal to the first elements En , E12 ....
  • this includes direct deposition thereupon as well as deposition on a layer or multilayer pre-applied on the substrate.
  • a timing unit 9 specifically adapted and during sputter deposition of the layer, at least one of the following sputter-deposition parameters is abruptly changed (see above) : a2) pressure in the sputter atmosphere according, according to control block 11; b) Electric supply of plasma discharge, according to
  • control block 13 c) Electric bias of substrate, according to control block 15.
  • Combinations of a2) and/or b) and/or c) are possible.
  • Abrupt changing at least one of the addressed sputter- deposition-process parameters is performed once or more than once and, in latter case, between two or more than two parameter values or states, a schematically shown in the block of the timer unit 9.
  • the material deposited on the substrate 7 consists of
  • Fig. 2 is a representation in analogy to that of Fig. 1 of a further variant of the methods according to invention and of an embodiment of the sputter apparatus according to the invention.
  • the difference with respect to the variant and embodiment of fig. 1 is, that no noble gas is fed to the sputter atmosphere 3. Instead and from one or more than one gas sources 5a, one or more than one reactive gas is fed to the sputter atmosphere 3.
  • one or more elements E gi , E g2 .. are fed to the sputter atmosphere and are reacted with one or more than one of the first elements Ei.
  • Elements fed to the sputter atmosphere by reactive gas are addressed by E g .
  • the second elements thus become:
  • the material deposited on the substrate 7 consists of
  • Fig. 3 shows in a representation in analogy to those of the Figs . 1 and 2 a further variant of the methods according to the invention and an embodiment of a sputter apparatus according to the invention.
  • the difference to the variant according to Fig. 2 is that additionally to one or more elements E gi , E g 2 introduced by reactive gas to the sputter atmosphere 3, a noble gas is fed to the sputter atmosphere by the noble gas source 5.
  • the group of sputter-deposition-process parameters out of which at least one may abruptly be changed are:
  • atmosphere at least one reactive gas resulting in at least one element E g as well as a noble gas, thus according to fig.3, and thereby to select as that sputter-deposition- process parameter abruptly changed, only the partial pressure and/or the type of the noble gas.
  • the partial pressure of at least one noble gas may even be changed by switching the flow of that at least one noble gas to the sputter atmosphere ON and OFF.
  • Fig. 4 shows in a representation in analogy to those of the Figs. 1 to 3 a variant of the methods of the invention and an embodiment of the sputter apparatus according to the invention as realized today. There is valid:
  • the partial pressure of argon is abruptly changed by switching argon flow into the putter atmosphere ON and OFF.
  • a layer 17 was deposited according to the variant of the methods according to the invention as schematically represented in Fig. 4.
  • a layer 17 of SiN was deposited by sputtering a silicon target in a nitrogen atmosphere .
  • sequences 14 and 15 were repeated for additional 4 times, leading to an overall thickness of the layer 17 on substrate 11 of approximately 316 n .
  • Two 150mm diameter silicon wafers as of wafers 11 of Fig. 5 were coated with a SiN layer from a silicon target as in the experiment in a nitrogen atmosphere but with ongoingly open argon flow to the sputter atmosphere, i.e. without any abrupt change of sputter-deposition -process parameter.
  • the resulting local stress is shown in Fig. 7 again for two wafers.
  • the average stress in the comparative layers SiN layer was -1'969 MPa.
  • the average stress in the layer alters by 1'173 MPa
  • Fig.9 shows the effect of the tensile stress T in a layer or multilayer 30 applied on a substrate as of a circular wafer-substrate 32.
  • the tensile stress T leads to warping or bending of the overall system of layer 30 and substrate 32 according to a bow B as schematically shown in Fig. 9.
  • the bow is thereby measured by the maximum deviation d of the substrate 32 from a plane E.
  • Bowing of a circular substrate or, more generically warping of a substrate of any shape becomes larger with increasing thickness of the layer or of the multilayer 30 due to the respective bending momentum-distribution from the layer- stress on the substrate.
  • this layer provides, applied on a substrate a warpage or, on a circular substrate as of a wafer, a bow B, which is stabilized or largely not affected by a thermal loading which the substrate and the layer are subjected to.
  • Fig. 10 shows the bow of the two 150min wafer-substrates plus layer according to fig.5 as described above,
  • the bow-extent d of the coated wafers prior to thermal loading was 0.089 m and 0.088 mm. After the addressed thermal loading the bow-extent was
  • Fig. 11 shows the bow of the wafers of the comparative example before being subjected to the 1'035C° thermal loading for 10 sec.
  • the bow d is 271pm.
  • Fig. 12 shows the bow of the wafers according to the comparative Example after having been subjected to the 1'035C° thermal load for 10 sec.
  • the bow d is 114 pm.
  • the layer deposited according to the invention on a substrate may have additional function, additional to the function of being stabilized to thermal loading with respect to its stress. It may be e.g. a layer with optical function and/or with electrical function and/or with a function in context with photolithography etc. Keeping this in mind multiple variants of the methods according to the present invention become apparent and respective substrate/layer systems incorporating the layer as realized by the present invention.
  • layers may be deposited on a substrate which layers, if providing a non-neglectable stress, are all stabilized with respect to thermal loading according to the present invention.
  • the overall substrate- layer-system is stabilized with respect to bow or warpage and with respect to thermal loading.
  • a further or additional layer or layer system to perform a desired function, e.g. an optical and/or an electrical function, or in the frame of photolithography as addressed in US
  • such additional functional layer may be deposited on the substrate before and/or during and/or after depositing the layer according to the present
  • Such functional layer will customarily have an overall tensile or compressive stress and will lead to bowing of the entire system of substrate/functional layer.
  • this functional layer induced bow or warpage is compensated by applying the stabilized layer according to the invention. Because the layer according to the invention is stress-stabilized with respect to thermal loading as was addressed above, this layer provides on the substrate a bow, which is
  • substrate/functional-layer is approximately known, applying the layer stabilized with respect to stress/thermal
  • loading may accurately compensate for that bow induced by the functional layer.
  • the stress/thermal loading stabilized layer according to the present invention may especially be applied if
  • thermal loading occurs subsequent to the deposition thereof.
  • thermal loading occurs.
  • Such high thermal loading may be necessary because of a subsequent respective treatment process e.g. for layer deposition, for etching etc.
  • the applied stress/thermal- loading stabilized layer according to the invention allows that an anticipated bow may be advance compensated by applying a layer according to the invention.
  • the finally resulting bow is only caused by the stress in layers applied subsequent to applying the stress/thermal-load stabilized layer on one hand and the stress/thermal- load stabilized layer on the other hand, even if subsequently applying such layer causes high thermal loading.
  • Fig.13 schematically shows such processing example.
  • the substrate 40 as of a wafer, is subjected to deposition of a layer 42 according to the invention with compressive stress, C.
  • the substrate 40/layer 42 is subjected to a bow. This bow is controllable by the material and thickness of the layer 42 and is set on a predetermined amount +d.
  • the substrate 40/layer42 is subjected to a further layer - 44- deposition process which may be PVD or CVD. This process causes thermal loading of the substrate 40/layer 42 but does not affect the +d bow.
  • a further layer - 44- deposition process which may be PVD or CVD. This process causes thermal loading of the substrate 40/layer 42 but does not affect the +d bow.
  • the layer 44 causes the predicted -d bow of the substrate 40/layer42 /layer 44- system.
  • Both layers 44 and 42 may be applied on the same side of the substrate 40, in this case with compressive and with tensile stress.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La contrainte dans une couche déposée sur un substrat est stabilisée vis-à-vis d'une charge thermique par réalisation d'un dépôt par pulvérisation cathodique de la couche, par maintien de tous les éléments du matériau de la couche sur toute l'épaisseur de la couche et par modification brusque d'au moins l'un des paramètres du processus de dépôt par pulvérisation cathodique.
PCT/EP2019/051895 2018-02-26 2019-01-25 Stabilisation de contrainte dans une couche par rapport à une charge thermique WO2019162041A1 (fr)

Applications Claiming Priority (2)

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CH2292018 2018-02-26
CH229/18 2018-02-26

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WO2019162041A1 true WO2019162041A1 (fr) 2019-08-29

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US20020064359A1 (en) * 2000-11-25 2002-05-30 Luc Ouellet Method of making a functional device with deposited layers subject to high temperature anneal
US20040214417A1 (en) * 2003-03-11 2004-10-28 Paul Rich Methods of forming tungsten or tungsten containing films
US20050211545A1 (en) * 2004-03-26 2005-09-29 Cerio Frank M Jr Ionized physical vapor deposition (iPVD) process
US20150132551A1 (en) * 2013-11-13 2015-05-14 Applied Materials, Inc. Method for graded anti-reflective coatings by physical vapor deposition
US20150340225A1 (en) 2014-05-22 2015-11-26 Lam Research Corporation Back side deposition apparatus and applications
US20160130694A1 (en) * 2014-11-11 2016-05-12 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd Tin/tic coating and method for manufacturing the tin/tic coating and articles so coated
US20160168686A1 (en) * 2013-07-03 2016-06-16 Oerlikon Surface Solutions Ag, Trübbach Target age compensation method for performing stable reactive sputtering processes

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US20020064359A1 (en) * 2000-11-25 2002-05-30 Luc Ouellet Method of making a functional device with deposited layers subject to high temperature anneal
US20040214417A1 (en) * 2003-03-11 2004-10-28 Paul Rich Methods of forming tungsten or tungsten containing films
US20050211545A1 (en) * 2004-03-26 2005-09-29 Cerio Frank M Jr Ionized physical vapor deposition (iPVD) process
US20160168686A1 (en) * 2013-07-03 2016-06-16 Oerlikon Surface Solutions Ag, Trübbach Target age compensation method for performing stable reactive sputtering processes
US20150132551A1 (en) * 2013-11-13 2015-05-14 Applied Materials, Inc. Method for graded anti-reflective coatings by physical vapor deposition
US20150340225A1 (en) 2014-05-22 2015-11-26 Lam Research Corporation Back side deposition apparatus and applications
US20160130694A1 (en) * 2014-11-11 2016-05-12 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd Tin/tic coating and method for manufacturing the tin/tic coating and articles so coated

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