WO2019148673A1 - 基于半波耦合部分反射器的可调谐半导体激光器 - Google Patents

基于半波耦合部分反射器的可调谐半导体激光器 Download PDF

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WO2019148673A1
WO2019148673A1 PCT/CN2018/084333 CN2018084333W WO2019148673A1 WO 2019148673 A1 WO2019148673 A1 WO 2019148673A1 CN 2018084333 W CN2018084333 W CN 2018084333W WO 2019148673 A1 WO2019148673 A1 WO 2019148673A1
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waveguide
partial reflector
semiconductor laser
tapered
electrode
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French (fr)
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何建军
郭嘉
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Zhejiang University
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Zhejiang University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
    • Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation

Definitions

  • the present invention relates to semiconductor lasers, and more particularly to a tunable semiconductor laser based on a half-wave coupled partial reflector.
  • Wavelength tunable lasers are a key technology in WDM technology and are widely used in metropolitan area networks and remote optical communications. With the rapid development of optical communication technology, tunable semiconductor lasers are also continually moving toward low cost, low power consumption, miniaturization and integration. Starting from practical applications, tunable semiconductor lasers are required to be widely tuned, low in cost, stable in operation, and easy to operate.
  • a grating-based laser such as a distributed feedback laser (DFB) and a distributed reflection grating laser (DBR).
  • DFB distributed feedback laser
  • DBR distributed reflection grating laser
  • steps such as grating, etching grating, and secondary epitaxy are required, which greatly increases the cost of the device.
  • Another tunable laser solution is achieved by coupling between two resonant cavities of different lengths, the wavelength tuning range of which can be significantly increased by the Vernier effect.
  • One implementation of this type of laser is based on a modulated grating Y-type (MG-Y) tunable semiconductor laser, reported in "High-speed direct modulation of widely tunable MG-Y laser", IEEE Photonics Technology Letters, 17 ( 6) (2005): 1157-1159. Its structure is shown in Figure 1.
  • This MG-Y tunable semiconductor laser consists of a gain region, a common phase region, an MMI coupler, a differential phase region and two gratings.
  • the structure is very complicated; the single-mode stable operation and wavelength tuning of the laser need to adjust the common phase region, the differential phase region and the injection current on the grating.
  • This multi-electrode coordinated tuning algorithm is very complicated, which is not conducive to the design and laser of the laser driving circuit. Efficient batch production, and high costs prevent the promotion of applications.
  • one end of the coupling cavity is a partially reflective structure, and the quality of the structure directly affects the single mode of the laser. Therefore, the requirements for design and fabrication of the laser are high, and the influence is affected to some extent. Its yield.
  • a V-shaped waveguide structure having a curved waveguide due to the use of a V-shaped waveguide structure having a curved waveguide, a certain loss is introduced and is not advantageous for integration with other devices.
  • the invention comprises two resonant cavities, one resonant cavity is mainly composed of an optical waveguide, a first partial reflector and a second partial reflector, and the other resonant cavity is mainly composed of an optical waveguide, a first partial reflector and a second partial reflector;
  • the resonators are arranged in the same straight line and coupled to each other, and the two second partial reflectors of the two resonators are connected by a common coupling waveguide.
  • the second partial reflectors of the two resonant cavities are each a splitting device having a fixed splitting ratio, and a part of the light is reflected back to the self resonant cavity, and a part of the light passes through the coupled waveguide into the other resonant cavity.
  • the second partial reflectors of the two resonant cavities are each formed by a tapered tapered waveguide, two 45 degree corner mirrors and a multimode interferometer, a tapered tapered waveguide and a multimode
  • the interferometer and the combination of corner mirrors composed of two 45 degree corner mirrors are arranged along the same straight line, one end of the tapered tapered waveguide is connected with the optical waveguide, and the other end of the tapered tapered waveguide is connected with one end of the multimode interferometer, multimode interference
  • the other end of the device is connected to one end of a corner mirror group consisting of two 45-degree angle mirrors arranged side by side, and the other end of the corner mirror group is connected with the coupling waveguide;
  • the light beam transmitted from the optical waveguide is widened and divided into three parts by a tapered tapered waveguide and a multimode interferometer, wherein two portions of the two sides of the light are respectively reflected back to the original optical waveguide of the self resonant cavity through two 45 degree corner mirrors. Another part of the light enters the other resonant cavity via the coupled waveguide. After entering another resonant cavity, it passes through a corner mirror group, a multimode interferometer, a tapered tapered waveguide, an optical waveguide, and a first partial reflector.
  • the second partial reflectors of the two resonant cavities are each formed by a tapered tapered waveguide and two 45 degree corner mirrors, a tapered tapered waveguide and two 45 degree corner mirrors.
  • the corner mirror combination is arranged along the same straight line, one end of the tapered tapered waveguide is connected with the optical waveguide, and the other end of the tapered tapered waveguide is connected with one end of the corner mirror group consisting of two 45 degree corner mirrors arranged side by side, two 45 The other end of the corner mirror combination is coupled to the coupled waveguide;
  • the light beam transmitted from the optical waveguide is widened and divided into three parts by a tapered tapered waveguide, wherein two portions of the light on both sides are respectively reflected back to the original optical waveguide of the self-resonant cavity through two 45-degree corner mirrors, and the other part of the light is coupled.
  • the waveguide enters another resonant cavity. After entering another resonant cavity, it passes through a corner mirror group, a tapered tapered waveguide, an optical waveguide, and a first partial reflector.
  • a coupling cavity is used to connect two special structures of the resonant cavity to realize a certain cross-coupling coefficient and a coupling phase of an odd multiple of 180°, so that the laser has the best single mode selectivity.
  • the two resonant cavities have different optical lengths such that only one resonant frequency of the two resonant cavities coincides within the gain spectrum, and both resonant cavities change the effective refractive index by applying a current or voltage to achieve wavelength tuning.
  • the emission wavelength of the laser can be switched over a series of channels by varying the effective refractive index of a portion of the waveguide within a cavity.
  • the total optical length (considering the refractive index) formed by the optical waveguide, the first partial reflector, and the second partial reflector in the resonant cavity is different.
  • the optical waveguide optical length (considering the refractive index) is different.
  • the 45 degree corner mirrors are all 45° deep etched corner mirrors.
  • the first electrode arrangement is: one resonant cavity is mainly composed of an optical waveguide, a first partial reflector, and a second partial reflector, and the other resonant cavity is mainly composed of an optical waveguide, a first partial reflector and a second partial reflector; wherein One electrode is disposed on the optical waveguide of the one cavity and the second partial reflector, and one electrode is disposed on the optical waveguide of the other resonant cavity and the second partial reflector, and a voltage or a current is applied to the two electrodes to provide a gain. The voltage or current is changed to change the output wavelength of the semiconductor laser.
  • the second electrode arrangement is: one resonant cavity is mainly composed of an optical waveguide, a first partial reflector, and a second partial reflector, and the other resonant cavity is mainly composed of an optical waveguide, a first partial reflector, and a second partial reflector; wherein One electrode is disposed on the optical waveguide of the one cavity and the second partial reflector, and one electrode is disposed on the optical waveguide of the other resonant cavity and the second partial reflector, and a voltage or a current is applied to the two electrodes to provide a gain. Changing a voltage or a current to change an output wavelength of the semiconductor laser;
  • An electrode is disposed on the coupled waveguide, and the voltage or current of the electrode is changed to change the coupling relationship between the two resonant cavities, thereby adjusting the single mode selectivity of the semiconductor laser.
  • the third electrode arrangement is: one resonant cavity is mainly composed of an optical waveguide, a first partial reflector, and a second partial reflector, and the other resonant cavity is mainly composed of an optical waveguide, a first partial reflector, and a second partial reflector;
  • One electrode is disposed on the second partial reflector of the resonant cavity, and a voltage or current is applied to the electrode to provide a gain, and an external modulation signal is applied to the electrode voltage or current to modulate the semiconductor laser;
  • the optical lengths of the optical waveguides are different and one electrode is respectively provided as a tuning region electrode, and a voltage or current is applied to one of the tuning region electrodes and adjusted to realize a digital change of the output wavelength of the semiconductor laser within the tuning range, and another tuning The region electrode applies a voltage or current and adjusts to fine tune the output wavelength of the semiconductor laser.
  • the first partial reflector of the two resonant cavities is formed by a deep etched air bath or by a cleaved end face.
  • the first optical resonant cavity has a resonant frequency corresponding to a series of equally spaced operating channels
  • the second resonant cavity has a different optical length such that it has only one resonant frequency within the gain spectrum of the laser material and the first The resonant frequency of the resonant cavity coincides.
  • At least a portion of the optical waveguides in the two resonant cavities are used to apply a voltage or current such that its effective refractive index changes such that the frequency of the laser switches over a series of discrete operating channels.
  • the partial reflectors at the coupling ends of the two resonant cavities each have a specific transmittance and reflectivity, and the transmitted light enters the other resonant cavity to achieve cross-coupling, and the reflected light returns to the original resonant cavity to achieve self-coupling for optimal single-mode performance.
  • the device should have a low loss and the reflectance should be greater than the transmittance.
  • the partial reflectors and the mid-section coupled waveguides of the two coupling ends constitute a coupler of the laser.
  • the coupler is preferably a half-wave coupler, that is, a phase of 180° or an odd multiple between the cross-coupling and the self-coupling. Poor, the phase difference can be precisely adjusted by designing the size of the mid-section coupled waveguide.
  • Each partial reflector of the coupling end is based on the principle of multimode interference and total internal reflection.
  • Each partial reflector consists of a gradient waveguide, a multimode interferometer, two 45 degree corner mirrors and a coupled waveguide.
  • the light is divided into three beams in the multimode interferometer.
  • the middle beam passes through the middle-coupling waveguide and enters the other cavity.
  • the upper and lower beams pass through two 45-degree corner mirrors and return to the original cavity through two total internal reflections.
  • the present invention has the following beneficial effects:
  • the invention does not need to make a grating, so that the manufacturing process is relatively simple, and the manufacturing cost is reduced.
  • the tuning range of the laser is increased due to the use of the vernier effect between the resonators. From the perspective of the tuning control mechanism, the laser proposed by the present invention requires only single-electrode tuning, and the wavelength control is relatively easy.
  • the design of the coupler, the parameter selection has a higher degree of freedom, can achieve a more precise coupling relationship, so that the best side mode suppression ratio can be obtained, with a higher manufacturing tolerance.
  • the structure is simple, easy to integrate with other devices.
  • Figure 1 is a block diagram showing the structure of a modulated grating Y-type (MG-Y) tunable semiconductor laser in the background art.
  • FIG. 2 is a schematic view showing the structure of a V-type coupling cavity wavelength switchable semiconductor laser in the background art.
  • Fig. 3 is a schematic view showing an embodiment of the present invention, (a) is an overall structural view thereof, and (b) is an enlarged structural view of a half-wave coupling partial reflector.
  • Figure 4 is a schematic diagram showing the positional relationship of the resonance frequencies of two resonators.
  • Figure 5 is a graph of the various mode thresholds for lasers with different normalized intensity cross-coupling coefficients.
  • Figure 6 is the relationship between the threshold value of the main side mode and the cross-coupling coefficient of the normalized intensity under different coupling phases.
  • Figure 7 is a schematic diagram of the principle of the MMI coupler.
  • Figure 8 is a schematic view showing the structure of a partial reflector used in the first embodiment of the present invention.
  • Fig. 9 is a view showing the comparison of the intensity distribution of the partial reflector output port used in the first embodiment of the present invention with a standard 1 x 3, 1 x 2 MMI coupler.
  • Figure 10 is a graph showing the relationship between the transmittance and reflectance of a partial reflector used in the first embodiment of the present invention as a function of the length of the multimode interference region.
  • Fig. 11 is a schematic view showing the manner of electrode distribution used in the first embodiment of the present invention.
  • Fig. 12 is a view showing the effect of measuring the single-electrode wavelength tuning of the first embodiment of the present invention.
  • Figure 13 is a graph showing the superposition of spectra of each channel measured in the first embodiment of the present invention.
  • Fig. 14 is a view showing the distribution pattern of electrodes used in the second embodiment of the present invention.
  • Fig. 15 is a view showing the effect of measuring the single-electrode wavelength tuning of the second embodiment of the present invention.
  • Figure 16 is a schematic view showing the manner of electrode distribution used in the third embodiment of the present invention.
  • Figure 17 is a graph showing the relationship between the measured side mode suppression ratio and the current of the coupled waveguide electrode in the third embodiment of the present invention.
  • Fig. 18 is a view showing the structure of a half-wave coupling partial reflector used in the fourth embodiment of the present invention.
  • Figure 19 is a graph showing the relationship between the transmittance and reflectance of a partial reflector used in the fourth embodiment of the present invention as a function of the length of the tapered tapered waveguide.
  • first partial reflector 101/201 optical waveguide 102/202, second partial reflector 103/203, coupled waveguide 3, 45 degree corner mirror 104/105/204/205, tapered tapered waveguide 106/206, Multimode interferometer 107/207, long cavity electrode 108/109, short cavity electrode 208/209, coupled cavity electrode 4, coupled waveguide electrode 5.
  • the specific implementation of the present invention includes two resonant cavities, one resonant cavity is mainly composed of an optical waveguide 102, a first partial reflector 101, and a second partial reflector 103, and the other resonant cavity is mainly composed of an optical waveguide 202, A part of the reflector 201 and the second partial reflector 203 are formed; the two resonant cavities are arranged along the same straight line and coupled to each other, and the two second partial reflectors 103, 203 of the two resonant cavities pass through a common coupled waveguide 3 connection.
  • the second partial reflectors 103, 203 of the two resonant cavities are each a splitting device having a fixed splitting ratio, a portion of the light is reflected back to the self resonant cavity, and a portion of the light passes through the coupled waveguide 3 into the other resonant cavity.
  • the second partial reflectors 103/203 of one embodiment are each comprised of a tapered tapered waveguide 106/206, two 45 degree corner mirrors 104, 105/204, 205 and a multimode interferometer 107/207.
  • the second partial reflector 103/203 of another embodiment consists of only one tapered tapered waveguide 106/206 and two 45 degree corner mirrors 104, 105/204, 205.
  • the total optical length (considering the refractive index) formed by the optical waveguide 102/202, the first partial reflector 101/201, and the second partial reflector 103/203 in the resonant cavity is different.
  • the second partial reflectors 103, 203 and the intermediately coupled coupling waveguide 3 constitute a half-wave coupler for mode selection. Due to the structural symmetry, the first reflectors 101, 201 can both serve as output ports of the laser.
  • the two-stage optical waveguides 102 and 202, the multi-mode interferometers 107 and 207 and the tapered tapered waveguides 106 and 206 in the partial reflector are all subjected to a shallow etching process, and only the first partial reflectors 101 and 201 are deep.
  • a deep etch process is used at the etched reflective surface and at the 45° corner mirrors 104, 105, 204, and 205.
  • the length of the optical waveguide 102 is set to L 11
  • the effective refractive index is n 11
  • the length of the second partial reflector 103 is set to L 12 and the effective refractive index is n 12 .
  • first partial reflector 201, the optical waveguide 202 and the second partial reflector 203 constitute a second resonant cavity whose resonant frequency interval ⁇ f' is:
  • L 21 is the length of the optical waveguide 202 in the second resonant cavity
  • n 21 is its effective refractive index
  • L 22 is the length of the second partial reflector 203 in the second resonant cavity
  • n 22 is its effective refractive index.
  • the equivalent optical length of the two-stage resonant cavity is slightly different in design, so the resonance frequency interval will also have a slight difference, which makes the two of the two peaks coincide exactly in the gain spectrum of the working substance (as shown in the figure). 4)).
  • the interval between the mutually coincident resonance peaks of the two resonators is the free spectral range (FSR) of the combined cavity, and its size is:
  • the present invention changes the resonant frequency of one of the waveguides by changing the resonant frequency of one of the waveguides, thereby changing the coincidence frequency of the two resonant cavities, and the operating frequency of the laser jumps one channel. Since the operating frequency of the laser is the coincidence frequency of the two resonators, a small frequency change causes the laser operating frequency to hop one channel, which significantly increases the adjustment range of the laser operating wavelength.
  • k and g are the propagation constants and gain coefficients of the optical waveguide 102
  • k' and g' are the propagation constants and gain coefficients of the optical waveguide 202
  • i is an imaginary unit
  • L is the optical length of the first resonant cavity
  • L' Is the optical length of the second resonant cavity.
  • the normalized intensity cross-coupling coefficient is calculated using the following formula:
  • the threshold gain of each mode is about 0.150 nm when the normalized intensity cross-coupling coefficients are 0.1 and 0.5 respectively.
  • the normalized intensity cross-coupling coefficient should generally be less than 0.1.
  • the phase difference between cross-coupling and self-coupling also has an important effect on the single-mode selectivity of the laser.
  • the coupler is preferably a half-wave coupler, that is, the coupling phase is 180° or an odd multiple thereof.
  • Figure 6 shows the threshold difference of the principal side modes under different coupling phases. The relationship between the normalized intensity cross-coupling coefficients, when the coupling phase deviates from the optimal coupling phase, the maximum main mode side mode threshold difference of the laser will decrease.
  • the function of the half-wave coupler is to control the mutual coupling relationship between the two resonant cavities, wherein the second partial reflectors 103, 203 can precisely control the intensity relationship between the cross-coupling and the self-coupling, and the middle-coupling waveguide 3 can be accurately controlled.
  • the coupling between the two resonators is out of phase, so there is a higher degree of freedom in design to achieve the best single-mode output characteristics.
  • the second partial reflectors 103, 203 which can control the cross-coupling relationship in one embodiment, are implemented by a multimode interference (MMI) coupler coupled to two 45° total internal reflection deep etched face mirrors.
  • MMI multimode interference
  • the basic principle of the multimode interference coupler is the self-image effect formed by the interference of each mode in the multimode waveguide, that is, in the multimode waveguide, multiple guided modes interfere with each other, along the propagation direction of the waveguide, at periodic intervals. One or more duplicated images of the input field will appear.
  • the MMI coupler enables a beam splitter with an adjustable split ratio. As shown in Fig. 7, a typical 1 ⁇ 3 MMI power splitter consists of an input single mode waveguide, a multimode interference region and an output single mode waveguide. The light field distribution at different locations can be obtained using the Mode Transfer Analysis Method (MPA).
  • MPA Mode Transfer Analysis Method
  • the multimode interference region has a width of W mmi and a length of L mmi .
  • the effective width of each guided mode can be approximated as the effective width W ev of the fundamental mode.
  • n r is the effective refractive index of the waveguide core layer
  • n c is the effective refractive index of the waveguide cladding
  • ⁇ is the operating wavelength
  • the length of the base mode and the first-order mode can be obtained:
  • the image of the N input light fields, the imaging position x i and the phase of the ith image can be obtained for:
  • FIG. 8 is one of the implementations: input waveguide 102 is connected to the optical waveguide of the resonant cavity, and the intermediate output port 3 of the MMI coupler is connected to the MMI coupler of the other resonant cavity through the middle-stage coupled waveguide, and the upper and lower ports of the MMI coupler are converted into a reflective structure to reflect the light back to the original
  • the resonant cavity is realized by using a 45° deep etched total reflection corner mirror in the embodiment, and the upper port light is twice totally totally reflected by the corner mirror 104 and the corner mirror 105, and returns from the corner mirror 105; the lower port light passes through the
  • the self-coupling strength is generally greater than the cross-coupling strength, so the actual designed MMI coupler length is generally between the 1 ⁇ 3 MMI coupler and the 1 ⁇ 2 MMI coupler, so that The split ratios of the three ports are different, that is, the reflected light passing through the corner mirrors 104, 105 is stronger, and the transmitted light passing through the port 3 is weak.
  • BPM beam propagation method
  • FDTD finite difference method
  • the field strength distribution of the end face, Lmmi1 is the optimized length, and Lmmi2 and Lmmi3 correspond to the length of the multimode interference region of the 1 ⁇ 3 MMI coupler and the 1 ⁇ 2 MMI coupler, respectively, and Lmmi2 ⁇ Lmmi1 ⁇ Lmmi3.
  • the transmittance and the reflectance change little with the change of Lmmi, the Lmmi changes by 1 ⁇ m, and the change of the transmittance and the reflectance are both less than 0.01.
  • the main fabrication error of the structure is derived from the change of the length of the multimode interference region caused by the inaccurate engraving, and this change has little influence on the performance of the coupler, so the structure has a high manufacturing capacity. difference.
  • At least one active quantum well region in each region of the present invention should be injected with current to provide optical gain. At least one region of the two straight waveguides can be injected with current to change the refractive index of the material to achieve the wavelength.
  • Tuning. 11 is an electrode distribution method used in the first embodiment.
  • the electrode 108 and the electrode 208 are a long cavity electrode and a short cavity electrode, respectively, and the current can be changed to achieve wavelength tuning in different directions
  • the electrode 4 is a coupling cavity electrode, which is mainly used for Gain is provided and the single mode of the laser is optimized by fine-tuning its current and changing the refractive index of the coupler.
  • one resonant cavity is mainly composed of the optical waveguide 102, the first partial reflector 101, and the second partial reflector 103, and the other resonant cavity is mainly composed of the optical waveguide 202, the first part.
  • the reflector 201 and the second partial reflector 203 are composed.
  • the second partial reflectors 103/203 are each composed of a tapered tapered waveguide 106/206, two 45 degree corner mirrors 104, 105/204, 205 and a multimode interferometer 107/207, one A tapered tapered waveguide 106/206, a multimode interferometer 107/207, and a combination of corner mirrors composed of two 45 degree corner mirrors 104, 105/204, 205 are arranged along the same line, one end of the tapered tapered waveguide 106/206 Connected to the optical waveguide 102/202, the other end of the tapered tapered waveguide 106/206 is connected to one end of the multimode interferometer 107/207, and the other end of the multimode interferometer (107/207) is arranged by two side by side connections One end of the combination of corner mirrors of 45 degree angle mirrors (104, 105/204, 205) is connected, and the other end of the combination of two 45 degree angle mirrors (104, 105/204, 205) is connected, and the other
  • the beam transmitted from the optical waveguide 102/202 is widened and divided into three parts by the tapered tapered waveguide 106/206 and the multimode interferometer 107/207, wherein the two portions of the light on both sides pass through two 45 degree mirrors respectively.
  • 104, 105/204, 205 are reflected back to the original optical waveguide 102/202 of the self-resonant cavity, and another part of the light passes through the coupled waveguide 3 into the other resonant cavity.
  • After entering another resonant cavity it passes through two 45 degree corner mirror assemblies 204, 205/104, 105, multimode interferometer 207/107, tapered tapered waveguide 206/106, optical waveguide 202/102, and first partial reflector. 201/101.
  • the electrode arrangement of the resonant cavity is as shown in FIG. 11.
  • One electrode 4 is disposed on the second partial reflectors 103 and 203 of the two resonant cavities, and a voltage or current is applied to the electrodes to provide a gain, and external modulation is applied to the voltage or current.
  • a signal can modulate the semiconductor laser.
  • the optical lengths of the optical waveguides 102, 202 of the two resonant cavities are different and an electrode 108, 208 is respectively provided as a tuning region electrode, and a voltage or current is applied to one of the tuning region electrodes and adjusted to realize digital wavelength tuning of the semiconductor laser.
  • the measured tuning effect of the semiconductor laser thus formed is as shown in FIG. 12, and only a single electrode can be scanned to realize a wide range of digital tuning effects.
  • the device adopts the electrode distribution mode of FIG. 11.
  • the cavity length is designed to be 100 GHz channel spacing, and the difference between the two resonators is 5%.
  • the current on the long cavity electrode 108 is adjusted.
  • the wavelength has Regularly switching from 1538.0 nm to 1564.4 nm enables digital tuning of 34 channels in the range of about 27 nm, which enables a wide range of wavelength tuning of semiconductor lasers.
  • the measured spectral superposition of each channel is shown in Figure 13.
  • the SMSR of all channels is above 35dB, and the optimal channel's SMSR can be more than 40dB.
  • this embodiment can provide a better side mode suppression ratio.
  • one resonant cavity is mainly composed of the optical waveguide 102, the first partial reflector 101, and the second partial reflector 103, and the other resonant cavity is mainly composed of the optical waveguide 202, the first part.
  • the reflector 201 and the second partial reflector 203 are composed.
  • the second partial reflectors 103/203 are each composed of a tapered tapered waveguide 106/206, two 45 degree corner mirrors 104, 105/204, 205 and a multimode interferometer 107/207, one A tapered tapered waveguide 106/206, a multimode interferometer 107/207, and a combination of corner mirrors composed of two 45 degree corner mirrors 104, 105/204, 205 are arranged along the same line, one end of the tapered tapered waveguide 106/206 Connected to the optical waveguide 102/202, the other end of the tapered tapered waveguide 106/206 is connected to one end of the multimode interferometer 107/207, and the other end of the multimode interferometer (107/207) is arranged by two side by side connections One end of the combination of corner mirrors of 45 degree angle mirrors (104, 105/204, 205) is connected, and the other end of the combination of two 45 degree angle mirrors (104, 105/204, 205) is connected, and the other
  • the beam transmitted from the optical waveguide 102/202 is widened and divided into three parts by the tapered tapered waveguide 106/206 and the multimode interferometer 107/207, wherein the two portions of the light on both sides pass through two 45 degree mirrors respectively.
  • 104, 105/204, 205 are reflected back to the original optical waveguide 102/202 of the self-resonant cavity, and another part of the light passes through the coupled waveguide 3 into the other resonant cavity.
  • After entering another resonant cavity it passes through two 45 degree corner mirror assemblies 204, 205/104, 105, multimode interferometer 207/107, tapered tapered waveguide 206/106, optical waveguide 202/102, and first partial reflector. 201/101.
  • the electrode arrangement of the cavity is as shown in FIG. 14, in which one electrode 109 is disposed on the optical waveguide 102 and the second partial reflector 103 of one cavity, and the optical waveguide 202 and the second partial reflector 203 of the other cavity are collectively
  • An electrode 209 is provided, and a voltage or current is applied to both electrodes to provide a gain, and changing the voltage or current can change the output wavelength of the semiconductor laser.
  • the measured tuning effect of the semiconductor laser thus formed is as shown in Fig. 15. Since changing the current of a single electrode in this arrangement can change the refractive index of the resonator in a larger range, scanning one electrode can realize a larger range of numbers. Tuning effect.
  • the cavity length in this embodiment is designed to be 100 GHz channel spacing, the difference between the two resonators is 5%, and the current on the electrode 109 is adjusted.
  • the wavelength is regularly switched from 1539.3 nm to 1570.6 nm.
  • a digital tuning of 40 channels in the range of about 31 nm is achieved, that is, the semiconductor laser is tuned over a wider range of wavelengths.
  • one resonant cavity is mainly composed of the optical waveguide 102, the first partial reflector 101, and the second partial reflector 103, and the other resonant cavity is mainly composed of the optical waveguide 202, the first part.
  • the reflector 201 and the second partial reflector 203 are composed.
  • the second partial reflectors 103/203 are each composed of a tapered tapered waveguide 106/206, two 45 degree corner mirrors 104, 105/204, 205 and a multimode interferometer 107/207, one A tapered tapered waveguide 106/206, a multimode interferometer 107/207, and a combination of corner mirrors composed of two 45 degree corner mirrors 104, 105/204, 205 are arranged along the same line, one end of the tapered tapered waveguide 106/206 Connected to the optical waveguide 102/202, the other end of the tapered tapered waveguide 106/206 is connected to one end of the multimode interferometer 107/207, and the other end of the multimode interferometer (107/207) is arranged by two side by side connections One end of the combination of corner mirrors of 45 degree angle mirrors (104, 105/204, 205) is connected, and the other end of the combination of two 45 degree angle mirrors (104, 105/204, 205) is connected, and the other
  • the beam transmitted from the optical waveguide 102/202 is widened and divided into three parts by the tapered tapered waveguide 106/206 and the multimode interferometer 107/207, wherein the two portions of the light on both sides pass through two 45 degree mirrors respectively.
  • 104, 105/204, 205 are reflected back to the original optical waveguide 102/202 of the self-resonant cavity, and another part of the light passes through the coupled waveguide 3 into the other resonant cavity.
  • After entering another resonant cavity it passes through two 45 degree corner mirror assemblies 204, 205/104, 105, multimode interferometer 207/107, tapered tapered waveguide 206/106, optical waveguide 202/102, and first partial reflector. 201/101.
  • the electrode arrangement of the cavity is as shown in FIG. 16, in which one electrode 109 is disposed on the optical waveguide 102 and the second partial reflector 103 of one cavity, and the optical waveguide 202 and the second partial reflector 203 of the other cavity are collectively
  • An electrode 209 is provided, and a voltage or current is applied to both electrodes to provide a gain, and changing the voltage or current can change the output wavelength of the semiconductor laser.
  • An electrode 5 is disposed on the coupled waveguide (3). Adjusting the voltage or current of the electrode can change the coupling relationship between the two resonant cavities, thereby adjusting the single mode selectivity of the semiconductor laser.
  • the measured single-electrode tuning effect of the semiconductor laser thus formed was the same as that of the second embodiment. Specifically, the currents of the fixed electrodes 109 and 209 operate the semiconductor laser under an output channel, and the current of the coupled waveguide electrode 5 is adjusted.
  • the change of the mode side suppression ratio of the channel is as shown in FIG. 17, when the current of the electrode 5 is At 14 mA, the channel achieves an optimum side mode rejection ratio of 37.5 dB.
  • one resonant cavity is mainly composed of an optical waveguide 102, a first partial reflector 101, and a second partial reflector 103.
  • the other resonant cavity is mainly composed of an optical waveguide 202, a first partial reflector 201, and a second.
  • the partial reflector 203 is composed of.
  • the structure of the half-wave coupling partial reflector is as shown in FIG.
  • the second partial reflectors 103/203 are each formed by a tapered tapered waveguide 106/206, two 45 degree corner mirrors 104, 105/204, 205, a tapered tapered waveguide 106/206 and The combination of two corner mirrors 104, 105/204, 205 is arranged along the same line, one end of the tapered tapered waveguide 106/206 is connected to the optical waveguide 102/202, and the other end of the tapered tapered waveguide 106/206 Connected to one end of two 45 degree corner mirrors 104, 105/204, 205 arranged side by side, the other ends of the two 45 degree corner mirrors 104, 105/204, 205 are connected to the coupling waveguide 3.
  • the light beam transmitted from the optical waveguide 102/202 is widened and divided into three parts by the tapered tapered waveguide 106/206, wherein the two portions of the light on both sides are reflected back through the two 45 degree corner mirrors 104, 105/204, 205, respectively.
  • the original optical waveguide 102/202 of its own cavity, and another part of the light enters the other resonant cavity via the coupled waveguide 3. After entering another resonant cavity, it passes through two 45 degree corner mirror combinations 204, 205/104, 105, tapered tapered waveguide 206/106, optical waveguide 202/102, and first partial reflector 201/101.
  • This structure can also achieve a specific transmittance and reflectance, and the transmittance and reflectance are less fluctuating with the length of the tapered waveguide, and have a higher manufacturing tolerance.

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Abstract

本发明公开了一种基于半波耦合部分反射器的可调谐半导体激光器。包括两个谐振腔，一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成，另一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成；两个谐振腔沿同一直线排列并相互耦合，两个谐振腔中的两个第二部分反射器之间通过一个公共的耦合波导连接。本发明具有最佳的单模选择，发射波长可在一系列信道上切换，无需制作光栅，结构简单，在耦合器的设计上具有很高的自由度，制作容差大，可以实现大范围的数字式调谐。

Description

基于半波耦合部分反射器的可调谐半导体激光器 技术领域
本发明涉及半导体激光器，尤其是涉及一种基于半波耦合部分反射器的可调谐半导体激光器。
背景技术
波长可调谐激光器是波分复用技术中的一个关键技术，在城域网和远程光通信领域中也具有广泛的应用。随着光通信技术的快速发展，可调谐半导体激光器也在不断的向低成本、低功耗、小型化和集成化的方向发展。从实际应用出发，要求可调谐半导体激光器可大范围调谐，成本低廉，工作稳定，易于操作。
目前在光通讯领域中使用最为广泛的波长可调谐激光器有两种方案：一种是基于光栅的激光器，如分布反馈激光器(DFB)和分布反射光栅激光器(DBR)。这类激光器的制造中都需要制作光栅、刻蚀光栅、二次外延等步骤，大大增加了器件的成本。
另一种可调谐激光器的方案是利用两个长度相异的谐振腔之间的耦合来实现，其波长调谐范围可以利用Vernier效应显著增加。这种类型激光器的一种实现形式是基于调制光栅Y型(MG-Y)可调谐半导体激光器，被报道于"High-speed direct modulation of widely tunable MG-Y laser",IEEE Photonics Technology Letters,17(6)(2005):1157-1159.其结构示意如图1，这种MG-Y可调谐半导体激光器包含一个增益区，一个共同相位区，一个MMI耦合器，一个微分相位区以及两个光栅，结构十分复杂；该激光器实现单模稳定工作和波长调谐需要调节共同相位区、微分相位区和光栅上的注入电流，这种多电极协调的调谐算法十分复杂，不利于激光器驱动电路的设计和激光器高效批量化生产，而且高昂的成本阻止了应用的推广。
为了提供廉价的可调谐半导体激光器，何建军于2006年提出了一种基于V型腔结构的半导体激光器，详见“V型耦合腔波长可切换半导体激光器”，授权公告号：CN100463312B，其结构示意如图2。它通过两个长度相异的谐振腔之间的耦合来实现波长的调谐或者切换，通过优化两个谐振腔之间的耦合系数能够实现很高的边模抑制比，其波长调谐通过调节某一臂注入电流来实现，调节范围可以利用Vernier效应而显著增加。除此之外，这种激光器还具有工艺简单，成本低，波长切换方便，等方面的优势。但是对于这种激光器，其耦合腔的一 端为部分反射结构，该结构制作质量的好坏直接影响激光器的单模特性，所以这种激光器对于设计和制作的要求均较高，在一定程度上影响了其成品率。此外，由于采用具有弯曲波导的V型波导结构，引入了一定损耗，且不利于和其它器件集成。
发明内容
针对现有技术的不足，本发明的目的在于提供一种基于半波耦合部分反射器的可调谐半导体激光器。
本发明采用的技术方案是：
本发明包括两个谐振腔，一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成，另一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成；两个谐振腔沿同一直线排列并相互耦合，两个谐振腔中的两个第二部分反射器之间通过一个公共的耦合波导连接。
所述两个谐振腔的第二部分反射器均为具有固定分光比的分光器件，一部分光经反射回到自身谐振腔，一部分光经过耦合波导进入另一个谐振腔。
第一种实施方式是：所述两个谐振腔的第二部分反射器均由一个渐变锥形波导、两个45度转角镜和一个多模干涉器构成，一个渐变锥形波导、一个多模干涉器和由两个45度转角镜构成的转角镜组合沿同一直线布置，渐变锥形波导的一端与光波导连接，渐变锥形波导的另一端与多模干涉器的一端连接，多模干涉器的另一端与由两个并排连接布置的45度转角镜构成的转角镜组的一端连接，转角镜组的另一端与耦合波导连接；
通过渐变锥形波导和多模干涉器共同将从光波导传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜反射回自身谐振腔的原光波导，另一部分光经耦合波导进入另一个谐振腔。进入另一个谐振腔后再依次经转角镜组、多模干涉器、渐变锥形波导、光波导、第一部分反射器。
第二种实施方式是：所述两个谐振腔的第二部分反射器均由一个渐变锥形波导和两个45度转角镜构成，一个渐变锥形波导和由两个45度转角镜构成的转角镜组合沿同一直线布置，渐变锥形波导的一端与光波导连接，渐变锥形波导的另一端与由两个并排连接布置的45度转角镜构成的转角镜组的一端连接，两个45度转角镜组合的另一端与耦合波导连接；
通过渐变锥形波导将从光波导传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜反射回自身谐振腔的原光波导，另一部分光经耦合波导进入另一个谐振腔。进入另一个谐振腔后再依次经转角镜组、渐变锥形波导、光波导、第一部分反射器。
本发明中通过耦合波导连接两个特殊结构的谐振腔实现了一定的交叉耦合系数和180°奇数倍的耦合相位，使得激光器具有最佳的单模选择性。
所述的两个谐振腔具有不同的光学长度，使得两个谐振腔同时只有一个谐振频率在增益谱内重合，两个谐振腔均通过施加电流或电压改变有效折射率从而实现波长的调谐。通过改变一个谐振腔内部分波导的有效折射率可以使激光器的发射波长在一系列信道上切换。
具体实施中，将所述谐振腔中的光波导、第一部分反射器、第二部分反射器形成的总光学长度(考虑折射率)不同。
优选地，所述光波导光学长度(考虑折射率)不同。
所述的45度转角镜均为45°深刻蚀转角镜。
第一种电极布置方式是：一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成，另一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成；其中一个谐振腔的光波导和第二部分反射器上共设一个电极，另一个谐振腔的光波导和第二部分反射器上共设一个电极，对这两个电极施加电压或电流均提供增益，改变电压或电流均以改变所述半导体激光器的输出波长。
第二种电极布置方式是：一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成，另一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成；其中一个谐振腔的光波导和第二部分反射器上共设一个电极，另一个谐振腔的光波导和第二部分反射器上共设一个电极，对该两个电极施加电压或电流均提供增益，改变电压或电流均以改变所述半导体激光器的输出波长；
所述耦合波导上设置一个电极，改变该电极电压或电流均以改变两个谐振腔之间的耦合关系，进而调节所述半导体激光器的单模选择性。
第三种电极布置方式是：一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成，另一个谐振腔主要由光波导、第一部分反射器、第二部分反射器组成；两个谐振腔的第二部分反射器上共设一个电极，对该电极施加电压或电流均提供增益，对该电极电压或电流施加外调制信号以对所述半导体激光器进行调制；两个谐振腔的光波导的光学长度不同并且分别设一个电极作为调谐区电极，对其中一个调谐区电极施加电压或电流并调节而实现所述半导体激光器的输出波长在调谐范围内的数字式改变，对另一个调谐区电极施加电压或电流并调节而实现对所述半导体激光器的输出波长进行细调。
所述的两个谐振腔中的第一部分反射器采用一个深刻蚀空气槽或者通过解理端面形成。
通过设计部分反射器和中段耦合波导的尺寸可以使两个光学谐振腔之间满足一定的耦合关系，包括耦合强度关系和耦合相位关系，使激光器达到最佳的单模效果。
所述的第一个光学谐振腔其谐振频率对应一系列等间隔工作信道，所述第二个谐振腔具有不同的光学长度使得它在激光器材料的增益谱范围内只有一个谐振频率与第一个谐振腔的谐振频率重合。所述两个谐振腔中的光波导至少有一部分用来施加电压或电流使得它的有效折射率发生改变从而使得激光器的频率在一系列分立的工作信道上切换。
所述两个谐振腔耦合端的部分反射器均具有特定的透射率和反射率，透射光进入另一个谐振腔实现交叉耦合，反射光回到原谐振腔实现自耦合，为实现最佳单模特性，该器件应具有较低的损耗，且反射率应大于透射率。
所述两个耦合端的部分反射器和中段耦合波导组成激光器的耦合器，理论上该耦合器最好是一个半波耦合器，即交叉耦合和自耦合之间具有180°或其奇数倍的相位差，通过设计中段耦合波导的尺寸可以精确调节该相位差。
所述耦合端的部分反射器的一种实现方式是基于多模干涉和全内反射原理，每个部分反射器由一段渐变波导、一个多模干涉器、两个45度转角镜和一个耦合波导组成，光在多模干涉器内分为三束，中路光束通过中段耦合波导进入另一个谐振腔，上下两路光束经两个45度转角镜，通过两次全内反射回到原谐振腔。
本发明与背景技术相比，具有的有益效果是：
1、本发明无需制作光栅，使得制作工艺相对简单，降低了制作成本。
2、调谐时由于利用了谐振腔之间的游标效应，增大了激光器的调谐范围；从调谐控制机制上来讲，本发明提出的激光器只需要单电极调谐，波长控制上相对容易很多。
3、其耦合器的设计，参数选取具有更高的自由度，可以实现更精确的耦合关系，从而可以获得最佳的边模抑制比，具有较高的制作容差。
4、结构简单，易于与其他器件集成。
附图说明
图1是背景技术中基于调制光栅Y型(MG-Y)可调谐半导体激光器的结构示意图。
图2是背景技术中V型耦合腔波长可切换半导体激光器的结构示意图。
图3是本发明的一个实施方式示意图，(a)为其整体结构图，(b)为半波耦合部分反射器的结构放大图。
图4是两个谐振腔谐振频率位置关系示意图。
图5是不同归一化强度交叉耦合系数下激光器的各模式阈值。
图6是不同耦合相位下主边模阈值差和归一化强度交叉耦合系数的关系
图7是MMI耦合器原理示意图。
图8是本发明第1个实施例中使用的部分反射器结构示意图。
图9是本发明第1个实施例中使用的部分反射器输出端口强度分布与标准1×3、1×2MMI耦合器的对比示意图。
图10是本发明第1个实施例中使用的部分反射器透射率和反射率随多模干涉区长度的变化关系图。
图11是本发明第1个实施例中的使用的电极分布方式示意图。
图12是本发明第1个实施例实测单电极波长调谐效果图。
图13是本发明第1个实施例实测各信道光谱叠加图。
图14是本发明第2个实施例中的使用的电极分布方式示意图。
图15是本发明第2个实施例实测单电极波长调谐效果图。
图16是本发明第3个实施例中的使用的电极分布方式示意图。
图17是本发明第3个实施例实测边模抑制比随耦合波导电极电流的变化关系图。
图18是本发明第4个实施例中使用的半波耦合部分反射器结构示意图。
图19是本发明第4个实施例中使用的部分反射器透射率和反射率随渐变锥形波导长度的变化关系图。
图中：第一部分反射器101/201、光波导102/202、第二部分反射器103/203、耦合波导3、45度转角镜104/105/204/205、渐变锥形波导106/206、多模干涉器107/207、长腔电极108/109、短腔电极208/209、耦合腔电极4、耦合波导电极5。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
如图1所示，本发明具体实施包括两个谐振腔，一个谐振腔主要由光波导102、第一部分反射器101、第二部分反射器103组成，另一个谐振腔主要由光波导202、第一部分反射器201、第二部分反射器203组成；两个谐振腔沿同一直线排列并相互耦合，两个谐振腔中的两个第二部分反射器103、203之间通过一个公共的耦合波导3连接。两个谐振腔的第二部分反射器103、203均为具有固定分光比的分光器件，一部分光经反射回到自身谐振腔，一部分光经过耦合波导3进入另一个谐振腔。
一种实施方式的第二部分反射器103/203均由一个渐变锥形波导106/206、两个45度转角镜104、105/204、205和一个多模干涉器107/207构成。另一种实施方式的第二部分反射器103/203仅由一个渐变锥形波导106/206和两个45度转角镜104、105/204、205构成。
具体实施中，将所述谐振腔中的光波导102/202、第一部分反射器101/201、第二部分反射器103/203形成的总光学长度(考虑折射率)不同。
其中第二部分反射器103、203和中间连接的耦合波导3构成了用于选模的半波耦合器，由于结构上的对称性，第一反射器101、201均可以作为激光器的输出端口。
所述两段光波导102和202、部分反射器中多模干涉器107和207、渐变锥形波导106和206均采用浅刻蚀工艺，只有在所述的第一部分反射器101、201为深刻蚀反射面时和45°转角镜104、105、204和205处使用深刻蚀工艺。
本发明实施原理如下：
根据具体的设计要求，设定第一谐振腔中，光波导102长度为L 11，有效折射率为n 11，设定第二部分反射器103的长度为L 12，有效折射率为n 12，这两个结构组成了激光器的一个谐振腔，该谐振腔的谐振频率间隔Δf为：
Figure PCTCN2018084333-appb-000001
同样的，第一部分反射器201、光波导202和第二部分反射器203组成第二谐振腔，其谐振频率间隔Δf'为：
Figure PCTCN2018084333-appb-000002
其中，L 21为第二谐振腔中光波导202长度，n 21为其有效折射率，L 22为第二谐振腔中第二部分反射器203的长度，n 22为其有效折射率。一般在设计时，两段谐振腔的等效光学长度略有差别，所以其谐振频率间隔也会有微小的差别，这使得在工作物质的增益谱内，两者只有一个峰恰好重合(如图4所示)。两个谐振腔相邻的互相重合的谐振峰之间的间隔即为组合腔的自由光谱范围(FSR)，其大小为：
Figure PCTCN2018084333-appb-000003
由此，本发明通过改变其中一段波导的折射率，改变其谐振频率，从而使两个谐振腔的重合频率改变，激光器的工作频率跳变一个信道。由于激光器的 工作频率为两个谐振腔的重合频率，因此一个较小的频率变化就会导致激光器工作频率跳变一个信道，这样就显著增加了激光器工作波长的调节范围。
对于本发明的耦合腔激光器，从阈值方程分析其单模特性。
对于两个谐振腔，假设从波导102耦合到波导202、波导102返回到波导102、波导202耦合到波导102、波导202返回波导202的振幅耦合系数分别记为C 12、C 11、C 21和C 22，由于结构上的对称性，C 12＝C 21，假设耦合中没有损耗，则有|C 11| 2+|C 12| 2＝1，|C 22| 2+|C 21 2＝1，假设第一部分反射器101、201的反射率分别为r 1、r 2，则激光器的阈值工作条件可表示为：
Figure PCTCN2018084333-appb-000004
式中，k和g为光波导102的传播常数和增益系数，k’和g’为光波导202的传播常数和增益系数，i为虚数单位，L为第一谐振腔的光学长度，L’为第二谐振腔的光学长度。
为了说明耦合系数的影响，采用以下公式计算归一化强度交叉耦合系数：
Figure PCTCN2018084333-appb-000005
假设n＝n’＝3.215，L＝466μm，L’＝518.31μm，r 1＝r 2＝0.823，则在1550nm附近，归一化强度交叉耦合系数分别为0.1和0.5时，各个模式的阈值增益G如图5所示，当归一化强度交叉耦合系数为0.1时，阈值最低的模式出现在两个腔谐振峰重合的1550nm处，与两边阈值次低的模式之间的阈值差异约为7.2cm -1，但是当归一化强度交叉耦合系数为0.5时，两个模式的阈值差仅为1.2cm -1。所以在本发明中归一化强度交叉耦合系数一般应小于0.1。
除了强度耦合系数外，交叉耦合与自耦合间的相位差同样对激光器的单模选择性有重要影响。理论上，对于此类双耦合腔选模的激光器，其耦合器最好是一个半波耦合器，即耦合相位为180°或其奇数倍，图6为不同耦合相位下主边模阈值差和归一化强度交叉耦合系数的关系，当耦合相位偏离最佳耦合相位时，激光器的最大主模边模阈值差异将会随之减小。
所述半波耦合器的作用是控制两个谐振腔的相互耦合关系，其中，第二部分反射器103、203可精确控制交叉耦合和自耦合之间的强度关系，中段耦合波导3可精确控制两个谐振腔之间的耦合相位差，因此在设计上具有更高的自由度，可实现最佳的单模输出特性。
一个实施例中可以控制交叉耦合关系的第二部分反射器103、203是通过一 个与两个45°全内反射深刻蚀面转角镜相连的多模干涉(multimode interference，MMI)耦合器实现的。多模干涉耦合器的基本原理是多模波导中各阶模的干涉形成的自映像效应，即在多模波导中，多个导模互相干涉，沿着波导的传播方向，在周期性的间隔处会出现输入场的一个或多个复制的映像。MMI耦合器可以实现分光比可调的分束器。如图7所示为一个典型1×3MMI功分器，由输入单模波导、多模干涉区和输出单模波导三部分组成。使用模式传输分析方法(MPA)可以获得不同位置处的光场分布。
设多模干涉区宽度为W mmi，长度为L mmi，在干涉区中，各导模的有效宽度可以近似为基模的有效宽度W ev,对于TE模式，有：
Figure PCTCN2018084333-appb-000006
其中，n r为波导芯层的有效折射率，n c为波导包层的有效折射率，λ为工作波长。
可得基模和一阶模的拍长：
Figure PCTCN2018084333-appb-000007
当输入波导位于多模干涉区的中心输入时，在传播方向
Figure PCTCN2018084333-appb-000008
处，可以得到N个输入光场的像，第i个像的成像位置x i及相位
Figure PCTCN2018084333-appb-000009
为：
Figure PCTCN2018084333-appb-000010
Figure PCTCN2018084333-appb-000011
式中，j＝1,2,…N，j表示输入光场的像的序数，N表示输入光场的像的总数。为了实现一部分光反射回原谐振腔(自耦合)，一部分耦合进入另一个谐振腔(交叉耦合)，本发明基于MMI耦合器原理进行了一些变化，图8是其中的一种实现方式：输入波导102与该谐振腔的光波导相连，MMI耦合器的中间输出端口3通过中段耦合波导与另一个谐振腔的MMI耦合器相连，MMI耦合器的上下两路端口转变为反射结构将光反射回原谐振腔，本实施例中使用45°深刻蚀全反射转角镜实现，上端口光先后经过转角镜104、转角镜105两次全反射，从转角镜105返回；下端口光先后经过转角镜105、转角镜104两次全反射，从转角镜104返回，两束光经过多模干涉区后耦合进入输入波导102。
在实际设计中，为得到最佳的单模效果，自耦合强度一般要大于交叉耦合强度，所以实际设计的MMI耦合器长度一般介于1×3MMI耦合器和1×2MMI耦合器之间，使三个端口的分光比不同，即通过转角镜104、105的反射光较强，通过端口3的透射光较弱。使用光束传输方法(BPM)或有限差分方法(FDTD)仿真结果表明，该结构可以实现任意的自耦合和交叉耦合强度比例，图9为使用FDTD算法仿真得出的不同多模干涉区长度下输出端面的场强分布情况，Lmmi1为优化后的长度，Lmmi2和Lmmi3分别对应1×3MMI耦合器和1×2MMI耦合器多模干涉区长度，Lmmi2<Lmmi1<Lmmi3。
图10为使用FDTD算法仿真得出的在输出波导宽度Wout＝3μm下该结构的透射率和反射率随多模干涉区长度Lmmi的变化关系。在图示的Lmmi取值范围内，透射率和反射率随Lmmi变化较小，Lmmi改变1μm，透射率和反射率的变化均小于0.01。由于在实际制作中，该结构的主要制作误差来源于套刻不准引起的多模干涉区长度的变化，而这一变化对耦合器性能的影响较小，因此该结构具有较高的制作容差。
本发明所述的各区域中应至少有一段有源量子阱区，对其注入电流以提供光增益，两段直波导中应至少有一段区域可以注入电流改变其材料的折射率，从而实现波长调谐。图11为第1实施例中使用的电极分配方式，电极108、电极208分别为长腔电极和短腔电极，改变其电流可以实现不同方向的波长调谐，电极4为耦合腔电极，主要用于提供增益，并通过微调其电流，改变耦合器的折射率，从而优化激光器的单模性。
本发明具体实施例如下：
实施例1
如图3(a)和图3(b)所示，一个谐振腔主要由光波导102、第一部分反射器101、第二部分反射器103组成，另一个谐振腔主要由光波导202、第一部分反射器201、第二部分反射器203组成。
两个谐振腔中，第二部分反射器103/203均由一个渐变锥形波导106/206、两个45度转角镜104、105/204、205和一个多模干涉器107/207构成，一个渐变锥形波导106/206、一个多模干涉器107/207和由两个45度转角镜104、105/204、205构成的转角镜组合沿同一直线布置，渐变锥形波导106/206的一端与光波导102/202连接，渐变锥形波导106/206的另一端与多模干涉器107/207的一端连接，多模干涉器(107/207)的另一端与由两个并排连接布置的45度转角镜(104、105/204、205)构成的转角镜组合的一端连接，两个45度转角镜(104、105/204、205)组合的另一端与耦合波导(3)连接。
通过渐变锥形波导106/206和多模干涉器107/207共同将从光波导102/202传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜104、105/204、205反射回自身谐振腔的原光波导102/202，另一部分光经耦合波导3进入另一个谐振腔。进入另一个谐振腔后再依次经过两个45度转角镜组合204、205/104、105、多模干涉器207/107、渐变锥形波导206/106、光波导202/102、第一部分反射器201/101。
谐振腔的电极布置如图11所示，两个谐振腔的第二部分反射器103、203上共设一个电极4，对该电极施加电压或电流均可以提供增益，对电压或电流施加外调制信号可以对所述半导体激光器进行调制。
两个谐振腔的光波导102、202的光学长度不同并且分别设一个电极108、208作为调谐区电极，对其中一个调谐区电极施加电压或电流并调节而实现所述半导体激光器的数字式波长调谐范围的改变，对另一个调谐区电极施加电压或电流并调节而实现对所述半导体激光器的输出波长进行细调。
由此搭建形成的半导体激光器的实测调谐效果如图12所示，仅扫描一个电极即可实现大范围数字式调谐效果。
本实施例器件采用图11的电极分配方式，谐振腔长度设计为100GHz信道间隔，两个谐振腔长度差为5％，调节长腔电极108上的电流，当电流从30mA到130mA变化，波长有规律地从1538.0nm到1564.4nm切换，实现了34个信道约27nm范围内的数字式调谐，即实现了半导体激光器大范围的波长调谐。实测各信道光谱叠加如图13所示，共有34个信道数，所有信道的SMSR均在35dB以上，最佳信道的SMSR可达40dB以上。由此可见，本实施例能够更好的边模抑制比。
实施例2
如图3(a)和图3(b)所示，一个谐振腔主要由光波导102、第一部分反射器101、第二部分反射器103组成，另一个谐振腔主要由光波导202、第一部分反射器201、第二部分反射器203组成。
两个谐振腔中，第二部分反射器103/203均由一个渐变锥形波导106/206、两个45度转角镜104、105/204、205和一个多模干涉器107/207构成，一个渐变锥形波导106/206、一个多模干涉器107/207和由两个45度转角镜104、105/204、205构成的转角镜组合沿同一直线布置，渐变锥形波导106/206的一端与光波导102/202连接，渐变锥形波导106/206的另一端与多模干涉器107/207的一端连接，多模干涉器(107/207)的另一端与由两个并排连接布置的45度转角镜(104、 105/204、205)构成的转角镜组合的一端连接，两个45度转角镜(104、105/204、205)组合的另一端与耦合波导(3)连接。
通过渐变锥形波导106/206和多模干涉器107/207共同将从光波导102/202传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜104、105/204、205反射回自身谐振腔的原光波导102/202，另一部分光经耦合波导3进入另一个谐振腔。进入另一个谐振腔后再依次经过两个45度转角镜组合204、205/104、105、多模干涉器207/107、渐变锥形波导206/106、光波导202/102、第一部分反射器201/101。
谐振腔的电极布置如图14所示，其中一个谐振腔的光波导102和第二部分反射器103上共设一个电极109，另一个谐振腔的光波导202和第二部分反射器203上共设一个电极209，对这两个电极施加电压或电流均可以提供增益，改变电压或电流均可以改变所述半导体激光器的输出波长。
由此搭建形成的半导体激光器的实测调谐效果如图15所示，由于该布置方式下改变单个电极的电流可以改变更大范围内谐振腔的折射率，所以扫描一个电极可以实现更大范围的数字式调谐效果。
本实施例中的谐振腔长度设计为100GHz信道间隔，两个谐振腔长度差为5％，调节电极109上的电流，当电流从50mA到200mA变化，波长有规律地从1539.3nm到1570.6nm切换，实现了40个信道约31nm范围内的数字式调谐，即实现了半导体激光器在更大范围波长调谐。
实施例3
如图3(a)和图3(b)所示，一个谐振腔主要由光波导102、第一部分反射器101、第二部分反射器103组成，另一个谐振腔主要由光波导202、第一部分反射器201、第二部分反射器203组成。
两个谐振腔中，第二部分反射器103/203均由一个渐变锥形波导106/206、两个45度转角镜104、105/204、205和一个多模干涉器107/207构成，一个渐变锥形波导106/206、一个多模干涉器107/207和由两个45度转角镜104、105/204、205构成的转角镜组合沿同一直线布置，渐变锥形波导106/206的一端与光波导102/202连接，渐变锥形波导106/206的另一端与多模干涉器107/207的一端连接，多模干涉器(107/207)的另一端与由两个并排连接布置的45度转角镜(104、105/204、205)构成的转角镜组合的一端连接，两个45度转角镜(104、105/204、205)组合的另一端与耦合波导(3)连接。
通过渐变锥形波导106/206和多模干涉器107/207共同将从光波导102/202传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜 104、105/204、205反射回自身谐振腔的原光波导102/202，另一部分光经耦合波导3进入另一个谐振腔。进入另一个谐振腔后再依次经过两个45度转角镜组合204、205/104、105、多模干涉器207/107、渐变锥形波导206/106、光波导202/102、第一部分反射器201/101。
谐振腔的电极布置如图16所示，其中一个谐振腔的光波导102和第二部分反射器103上共设一个电极109，另一个谐振腔的光波导202和第二部分反射器203上共设一个电极209，对这两个电极施加电压或电流均可以提供增益，改变电压或电流均可以改变所述半导体激光器的输出波长。
耦合波导(3)上设有一个电极5，调节该电极电压或电流可以改变两个谐振腔之间的耦合关系，进而调节所述半导体激光器的单模选择性。
由此搭建形成的半导体激光器的实测单电极调谐效果与实施例2相同。特别地，固定电极109和209的电流使所述半导体激光器工作在一个输出信道下，调节耦合波导电极5的电流，该信道的边模抑制比的变化如图17所示，当电极5电流为14mA时，该信道实现37.5dB的最佳边模抑制比。
实施例4
如图3(a)所示，一个谐振腔主要由光波导102、第一部分反射器101、第二部分反射器103组成，另一个谐振腔主要由光波导202、第一部分反射器201、第二部分反射器203组成。
该实施例中，半波耦合部分反射器的结构如图18所示。两个谐振腔中，第二部分反射器103/203均由一个渐变锥形波导106/206、两个45度转角镜104、105/204、205构成，一个渐变锥形波导106/206和由两个45度转角镜104、105/204、205构成的转角镜组合沿同一直线布置，渐变锥形波导106/206的一端与光波导102/202连接，渐变锥形波导106/206的另一端与两个并排连接布置的45度转角镜104、105/204、205的一端连接，两个45度转角镜104、105/204、205的另一端与耦合波导3连接。
通过渐变锥形波导106/206将从光波导102/202传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜104、105/204、205反射回自身谐振腔的原光波导102/202，另一部分光经耦合波导3进入另一个谐振腔。进入另一个谐振腔后再依次经两个45度转角镜组合204、205/104、105、渐变锥形波导206/106、光波导202/102、第一部分反射器201/101。
图19为对第二部分反射器103/203使用FDTD算法仿真得出的在输出波导宽度Wout＝1μm下该结构的透射率和反射率随渐变波导长度Ltaper的变化关系。 该结构同样可以实现特定的透射率和反射率，且透射率和反射率随渐变波导长度的波动更小，具有更高的制作容差。
以上措施为描述性质的，任何与其精神相似的方案都属于专利的保护范围。

Claims (9)

  1. 一种基于半波耦合部分反射器的半导体激光器，其特征在于：包括两个谐振腔，一个谐振腔主要由光波导(102)、第一部分反射器(101)、第二部分反射器(103)组成，另一个谐振腔主要由光波导(202)、第一部分反射器(201)、第二部分反射器(203)组成；两个谐振腔沿同一直线排列并相互耦合，两个谐振腔中的两个第二部分反射器(103、203)之间通过一个公共的耦合波导(3)连接。
  2. 根据权利要求1所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：所述两个谐振腔的第二部分反射器(103、203)均为具有固定分光比的分光器件，一部分光经反射回到自身谐振腔，一部分光经过耦合波导(3)进入另一个谐振腔。
  3. 根据权利要求1或2所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：所述两个谐振腔的第二部分反射器(103/203)均由一个渐变锥形波导(106/206)、两个45度转角镜(104、105/204、205)和一个多模干涉器(107/207)构成，渐变锥形波导(106/206)的一端与光波导(102/202)连接，渐变锥形波导(106/206)的另一端与多模干涉器(107/207)的一端连接，多模干涉器(107/207)的另一端与由两个并排连接布置的45度转角镜(104、105/204、205)构成的转角镜组的一端连接，转角镜组的另一端与耦合波导(3)连接；通过渐变锥形波导(106/206)和多模干涉器(107/207)共同将从光波导(102/202)传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜(104、105/204、205)反射回自身谐振腔的原光波导(102/202)，另一部分光经耦合波导(3)进入另一个谐振腔。
  4. 根据权利要求1或2所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：所述两个谐振腔的第二部分反射器(103/203)均由一个渐变锥形波导(106/206)和两个45度转角镜(104、105/204、205)构成，渐变锥形波导(106/206)的一端与光波导(102/202)连接，渐变锥形波导(106/206)的另一端与由两个并排连接布置的45度转角镜(104、105/204、205)构成的转角镜组的一端连接，两个45度转角镜(104、105/204、205)组合的另一端与耦合波导(3)连接；通过渐变锥形波导(106/206)将从光波导(102/202)传输来的光束扩宽并分成三部分，其中两侧的两部分光分别经两个45度转角镜(104、 105/204、205)反射回自身谐振腔的原光波导(102/202)，另一部分光经耦合波导(3)进入另一个谐振腔。
  5. 根据权利要求1～4任一所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：所述的两个谐振腔具有不同的光学长度，使得两个谐振腔同时只有一个谐振频率在增益谱内重合，两个谐振腔均通过施加电流或电压改变有效折射率从而实现波长的调谐。
  6. 根据权利要求3或4所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：其中一个谐振腔的光波导(102)和第二部分反射器(103)上共设一个电极，另一个谐振腔的光波导(202)和第二部分反射器(203)上共设一个电极，对这两个电极施加电压或电流均提供增益，改变电压或电流均以改变所述半导体激光器的输出波长。
  7. 根据权利要求3或4所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：其中一个谐振腔的光波导(102)和第二部分反射器(103)上共设一个电极，另一个谐振腔的光波导(202)和第二部分反射器(203)上共设一个电极，对该两个电极施加电压或电流均提供增益，改变电压或电流均以改变所述半导体激光器的输出波长；所述耦合波导(3)上设置一个电极，改变该电极电压或电流均以改变两个谐振腔之间的耦合关系，进而调节所述半导体激光器的单模选择性。
  8. 根据权利要求3或4所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：两个谐振腔的第二部分反射器(103、203)上共设一个电极，对该电极施加电压或电流均提供增益，对该电极电压或电流施加外调制信号以对所述半导体激光器进行调制；两个谐振腔的光波导(102、202)的光学长度不同并且分别设一个电极作为调谐区电极，对其中一个调谐区电极施加电压或电流并调节而实现所述半导体激光器的输出波长在调谐范围内的数字式改变，对另一个调谐区电极施加电压或电流并调节而实现对所述半导体激光器的输出波长进行细调。
  9. 根据权利要求1所述的一种基于半波耦合部分反射器的半导体激光器，其特征在于：所述的两个谐振腔中的第一部分反射器(101/201)采用一个深刻蚀空气槽或者通过解理端面形成。
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