WO2019132176A1 - Composition de résine thermoplastique destinée à étanchéifier un dispositif à semi-conducteurs et dispositif à semi-conducteurs étanchéifié à l'aide de celle-ci - Google Patents

Composition de résine thermoplastique destinée à étanchéifier un dispositif à semi-conducteurs et dispositif à semi-conducteurs étanchéifié à l'aide de celle-ci Download PDF

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Publication number
WO2019132176A1
WO2019132176A1 PCT/KR2018/010761 KR2018010761W WO2019132176A1 WO 2019132176 A1 WO2019132176 A1 WO 2019132176A1 KR 2018010761 W KR2018010761 W KR 2018010761W WO 2019132176 A1 WO2019132176 A1 WO 2019132176A1
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formula
carbon atoms
resin composition
sealing
thermosetting resin
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PCT/KR2018/010761
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English (en)
Korean (ko)
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한승
김민겸
Original Assignee
삼성에스디아이 주식회사
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Priority to CN201880084029.9A priority Critical patent/CN111527122A/zh
Publication of WO2019132176A1 publication Critical patent/WO2019132176A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/5046—Amines heterocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3412—Heterocyclic compounds having nitrogen in the ring having one nitrogen atom in the ring
    • C08K5/3415—Five-membered rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/35—Heterocyclic compounds having nitrogen in the ring having also oxygen in the ring
    • C08K5/357—Six-membered rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/49—Phosphorus-containing compounds
    • C08K5/50—Phosphorus bound to carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler

Definitions

  • the present invention relates to a thermosetting resin composition for sealing semiconductor devices and a semiconductor device sealed with the composition. More particularly, the present invention relates to a thermosetting resin composition for sealing a semiconductor element which is excellent in curing degree, fluidity and storage stability, and a semiconductor element sealed using the composition.
  • a package for a power device is considering changing the chip specification from Si to SiC.
  • a semiconductor device for a power device using an SiC chip can operate stably even under a high temperature environment of 200 ⁇ ⁇ or more and therefore a sealing material of such a semiconductor device is also required to have a high heat resistance of 200 ⁇ ⁇ or more.
  • a resin composition for sealing of a combination of an epoxy resin and a phenol curing agent has been widely used as a sealing material of a conventional semiconductor device.
  • the conventional sealing material has a glass transition temperature of about 230 ⁇ and satisfies the heat resistance required in current power device packages I can not do that.
  • thermosetting resin resin composition for sealing a semiconductor element has a high glass transition temperature and a high heat resistance temperature, an excellent electrical property and flame retardancy, a low thermal decomposition property, and a low curing shrinkage and a low thermal expansion coefficient.
  • the reactivity is much slower than the combination of the epoxy resin and the phenol curing agent. Therefore, in order to secure the quick curing property required for the semiconductor device sealing material, the curing should be performed well in a short curing time.
  • thermosetting resin composition for sealing a semiconductor device which is excellent in curing degree, fluidity and storage stability.
  • Another object of the present invention is to provide a semiconductor device sealed with the above-mentioned thermosetting resin composition.
  • thermosetting resin composition for sealing a semiconductor device of the present invention includes a maleimide compound, a benzoxazine compound, a compound represented by the following formula (4), and an inorganic filler:
  • R 4 , R 5 , R 6 , R 7 , W, Z, l, m and n are as defined in the description of the present invention.
  • the present invention provides a semiconductor device sealed with a thermosetting resin composition for sealing a semiconductor device according to the present invention.
  • thermosetting resin composition for sealing a semiconductor device which is excellent in curing degree, fluidity and storage stability.
  • the present invention provides a semiconductor device sealed with a thermosetting resin composition as described above.
  • the mold curing time of the thermosetting resin composition for sealing a semiconductor element formed by the transfer molding method is within 100 seconds at the set temperature.
  • the curing property of the thermosetting resin composition for sealing a semiconductor element is favorable, and in particular, it becomes easy to mold a thermosetting resin composition for sealing a semiconductor element and to obtain a cured product. Therefore, it is preferable to apply a curing catalyst suitable for the combination of a maleimide compound and a benzoxazine compound or a combination of a maleimide compound, a benzoxazine compound, and an epoxy resin in order to satisfy such required characteristics.
  • the curing catalyst may contain one or more components selected from the group consisting of an imidazole-based catalyst, a phosphorus-based catalyst, a boron-based catalyst, a Lewis acid, and an acid catalyst.
  • an imidazole-based catalyst having a high reaction rate has been used so far as a material for sealing semiconductor devices.
  • the imidazole-based catalyst having a fast reaction time there is a problem that the storage stability is lowered when the composition is allowed to stand at room temperature, and the toughness of the composition using the imidazole-based catalyst is lowered.
  • thermosetting resin composition containing the maleimide compound, the benzoxazine compound and the inorganic filler are improved by incorporating the specific compound of the general formula (4).
  • thermosetting resin composition for sealing semiconductor devices Accordingly, the constituent components of the thermosetting resin composition for sealing semiconductor devices according to the present invention will be described in detail.
  • the maleimide compound is preferably a maleimide compound having at least two maleimide groups in the molecule.
  • the maleimide compound may comprise a maleimide compound of formula 1:
  • n 1 is an integer of 0 or more and 10 or less
  • X 1 each independently represents an alkylene group having 1 or more carbon atoms and 10 or less carbon atoms, a group represented by the following formula (A), -SO 2 -, -CO-, an oxygen atom or a single bond,
  • Y is a hydrocarbon group having 6 or more carbon atoms and 30 or less carbon atoms having an aromatic ring and n 2 is an integer of 0 or more
  • R 1 each independently represents a hydrocarbon group having 1 to 6 carbon atoms
  • a is independently an integer of 0 to 4,
  • b is independently an integer of 0 or more and 3 or less.
  • X 1 is an alkylene group having 1 or more carbon atoms and 10 or less carbon atoms, preferably 1 or more carbon atoms and 7 or less carbon atoms, and more preferably 1 or more carbon atoms and 3 or less carbon atoms, and is not particularly limited, A chain alkylene group is preferred.
  • Specific examples of the straight chain alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, a heptylene group, an octylene group, a nonylene group, a decaneylene group, a trimethylene group, A methylene group, and a hexamethylene group.
  • alkyl group of the branched chain is -C (CH 3) 2 - (isopropylene group), -CH (CH 3) - , -CH (CH 2 CH 3) -, -C (CH 3) ( CH 2 CH 3 ) -, -C (CH 3 ) (CH 2 CH 2 CH 3 ) -, -C (CH 2 CH 3 ) 2 -; -CH (CH 3) CH 2 - , -CH (CH 3) CH (CH 3) -, -C (CH 3) 2 CH 2 -, -CH (CH 2 CH 3) CH 2 -, -C (CH 2 CH 3 ) 2 -CH 2 -, and the like.
  • Each R 1 is preferably independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms and an aliphatic hydrocarbon group having 1 to 2 carbon atoms, specifically, a methyl group or an ethyl group.
  • a is independently an integer of 0 or more and 4 or less, or an integer of 0 or more and 2 or less, more preferably 0.
  • B is independently an integer of 0 or more and 3 or less, more preferably 0 or 1,
  • n 1 is an integer of 0 or more and 10 or less, an integer of 0 or more and 6 or less, an integer of 0 or more and 4 or less, or an integer of 0 or more and 3 or less. Further, it is more preferable that the maleimide compound contains at least a compound having n 1 of 1 or more in the formula (1).
  • Y is a hydrocarbon group having 6 or more carbon atoms and 30 or less carbon atoms having an aromatic ring
  • n 2 is an integer of 0 or more.
  • the hydrocarbon group having 6 or more carbon atoms and 30 or less carbon atoms having the aromatic ring may be composed solely of an aromatic ring or may have a hydrocarbon group other than an aromatic ring.
  • Y may be an aromatic ring or two or more aromatic rings, and when two or more aromatic rings are the same, these aromatic rings may be the same or different.
  • the aromatic ring may be either a monocyclic structure or a polycyclic structure.
  • hydrocarbon group having 6 or more and 30 or less carbon atoms having an aromatic ring include benzene, biphenyl, naphthalene, anthracene, fluorene, phenanthrene, indacene, terphenyl, acenaphthylene, Of a compound having an aromatic group by removing two hydrogen atoms from the nucleus.
  • aromatic hydrocarbon groups may have a substituent.
  • the aromatic hydrocarbon group having a substituent means that a part or all of the hydrogen atoms constituting the aromatic hydrocarbon group are substituted with a substituent.
  • an alkyl group can be mentioned.
  • the alkyl group as the substituent is preferably a linear alkyl group. It is particularly preferable that the number of carbon atoms is 1 or more and 10 or less, 1 or more and 6 or less, or 1 or more and 4 or less. Specific examples include methyl, ethyl, propyl, isopropyl, butyl, tert-butyl and sec-butyl.
  • n 2 is an integer of 0 or more and 10 or less, an integer of 0 or more and 6 or less, an integer of 0 or more and 4 or less, or an integer of 0 or more and 3 or less.
  • Y may preferably have a group excluding two hydrogen atoms from benzene or naphthalene, and the group represented by the formula (A) may preferably be a group represented by any one of the following formulas (A1) and (A2).
  • R 4 is independently a hydrocarbon group having 1 or more carbon atoms and 6 or less carbon atoms, and e is an integer independently of 0 or more and 4 or less.
  • the maleimide compound of Formula 1 is a compound wherein X 1 is a linear or branched alkylene group having 1 to 3 carbon atoms and R 1 is a hydrocarbon group having 1 or 2 carbon atoms , a is an integer of 0 or more and 2 or less, b is 0 or 1, and n 1 is an integer of 0 or more and 4 or less.
  • maleimide compound represented by Formula 1 examples include maleimide compounds represented by Formula 1-1:
  • n 1 is an integer of 0 or more and 10 or less).
  • the maleimide compound of the present invention may contain a maleimide compound of a different kind from the maleimide compound of the above formula (1).
  • the maleimide compound is, for example, 4,4'-diphenylmethane bismaleimide, m-phenylene bismaleimide, p-phenylene bismaleimide, 2,2-bis [4- (3-ethyl-5-methyl-4-maleimidophenyl) methane, 4-methyl-1,3-phenylene bismaleimide, N, N ' (4-maleimidophenyl) sulfone, 3,3-dimethyl-5, 5-diethyl (2-ethylhexyl) -4,4-diphenylmethane bismaleimide, and bisphenol A diphenyl ether bismaleimide; a compound having two or more maleimide groups in the molecule such as polyphenylmethane maleimide; Compounds and the like.
  • the maleimide compounds include 1,6'-bismaleimide- (2,2,4-trimethyl) hexane, hexamethylenediamine bismaleimide, N, N'-1,2- Aliphatic maleimide compounds such as maleimide, N, N'-1,3-propylene bismaleimide and N, N'-1,4-tetramethylene bismaleimide; Imide-extended bismaleimide, and the like.
  • 1,6'-bismaleimide- (2,2,4-trimethyl) hexane, imide-extended bismaleimide is particularly preferred.
  • the maleimide compound may be used alone or in combination of two or more.
  • the maleimide compound of Formula 1 may be used.
  • the weight average molecular weight of (Mw) may be from about 2,500 up to about 400, at least about 4,000 or less, preferably about 800 or more. Within the above range, handling and fluidity can be ensured.
  • the maleimide compound may be prepared by reacting a maleimide compound with an amine compound, or may use a commercially available product.
  • the maleimide compound may be included in the thermosetting resin composition for sealing a semiconductor element in an amount of about 1 wt% to about 25 wt%, for example, about 3 wt% to about 20 wt%. Within this range, there may be a dielectric constant reduction and a glass transition temperature synergistic effect.
  • Benzoxazine compounds may include one or more of the following compounds of Formula 2, compounds of Formula 3A, and compounds of Formula 3B:
  • X 2 is an alkylene group having 1 or more carbon atoms and 10 or less carbon atoms, a hydrocarbon group having 6 or more carbon atoms and 30 or less carbon atoms having a group represented by the formula A, -SO 2 -, -CO-, an oxygen atom, a single bond or an aromatic ring Lt; / RTI &
  • R 2 each independently represents a hydrocarbon group having 1 or more carbon atoms and 6 or less carbon atoms
  • c is independently an integer of 0 or more and 4 or less.
  • X 3 is an alkylene group having 1 or more carbon atoms and 10 or less carbon atoms, a group represented by the formula A, -SO 2 -, -CO-, an oxygen atom, a single bond or an aromatic ring, A hydrocarbon group,
  • R 3 is independently a hydrocarbon group having 1 or more carbon atoms and 6 or less carbon atoms
  • d is independently an integer of 0 to 5).
  • X 2 and X 3 each independently represent an alkylene group having at least 1 carbon atom and not more than 10 carbon atoms, preferably not less than 1 but not more than 7, more preferably not less than 1 and not more than 3, but is not particularly limited, and linear or branched An alkylene group is preferred.
  • the straight chain alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, a heptylene group, an octylene group, a nonylene group, a decaneylene group, a trimethylene group, A methylene group, and a hexamethylene group.
  • alkyl group of the branched chain is -C (CH 3) 2 - (isopropylene group), -CH (CH 3) - , -CH (CH 2 CH 3) -, -C (CH 3) ( CH 2 CH 3 ) -, -C (CH 3 ) (CH 2 CH 2 CH 3 ) -, -C (CH 2 CH 3 ) 2 -; -CH (CH 3) CH 2 - , -CH (CH 3) CH (CH 3) -, -C (CH 3) 2 CH 2 -, -CH (CH 2 CH 3) CH 2 -, -C (CH 2 CH 3 ) 2 -CH 2 -, and the like.
  • X 2 and X 3 may be a hydrocarbon group having 6 or more carbon atoms and 30 or less carbon atoms having an aromatic ring such as phenyl, biphenyl, fluorene, naphthalenyl, and the like.
  • Each of R 2 and R 3 is preferably an aliphatic hydrocarbon group having 1 or more carbon atoms and 6 or less carbon atoms, and an aliphatic hydrocarbon group having 1 or 2 carbon atoms, specifically, a methyl group or an ethyl group.
  • c and d are each independently an integer of 0 or more and 5 or less, or an integer of 0 or more and 2 or less, more preferably 0.
  • benzoxazine compound may include, for example, at least one of the following formulas (2-1), (2-2), (2-3), (3-1)
  • R is a hydrocarbon group having 1 to 6 carbon atoms
  • Benzoxazine photo-compounds can be prepared by conventional methods known to those skilled in the art or commercially available products can be used.
  • the benzoxazine compound may be included in the thermosetting resin composition for sealing semiconductor devices in an amount of about 0.1 wt% to about 10 wt%, for example, about 0.5 wt% to about 5 wt%. Within this range, there may be a dielectric constant reducing effect.
  • the compound of formula (IV) can improve the cure degree, storage stability and fluidity of a composition comprising a maleimide compound, a benzoxazine compound and an inorganic filler.
  • the compound of Formula 4 can increase the toughness of a composition comprising a maleimide compound and a benzoxazine compound and an inorganic filler:
  • R 4 , R 5 , R 6 and R 7 are each independently a substituted or unsubstituted C 1 to C 30 aliphatic hydrocarbon group, a substituted or unsubstituted C 6 to C 30 aromatic hydrocarbon group, A substituted C1 to C30 aliphatic hydrocarbon group or a substituted or unsubstituted C1 to C30 aromatic hydrocarbon group containing a hetero atom,
  • W and Z each independently represent a substituted or unsubstituted C1 to C30 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group, a substituted or unsubstituted C1 to C30 aliphatic hydrocarbon group containing a hetero atom Or a substituted or unsubstituted C1 to C30 aromatic hydrocarbon group containing a hetero atom,
  • l is an integer of 0 to 4,
  • n 1 to 6
  • n is an integer of 1 to 5).
  • R 4 , R 5 , R 6 , and R 7 in Formula 4 may be a C6 to C30 aryl group unsubstituted or substituted with a hydroxy group.
  • "Substituted" for R 4 , R 5 , R 6 , and R 7 in Formula 4 is one in which at least one hydrogen atom is substituted with a C 6 to C 10 aryl group, a hydroxy group, a cyano group (CN) it means.
  • W in Formula 4 may be a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group.
  • substituted means that at least one hydrogen atom is replaced by an aryl group, a hydroxy group, a cyano group, or a C1 to C10 alkyl group.
  • the C6 to C30 aromatic hydrocarbon group may be an C6 to C30 aryl group or an C6 to C30 aryl ketone group.
  • the C6 to C30 aromatic hydrocarbon group may be a phenyl group or a benzophenone group.
  • Z in Formula 4 may be a substituted or unsubstituted C6 to C30 aryl group.
  • the C6 to C30 aryl group may be a phenyl group, a biphenyl group, a fluorenyl group or bis (phenyl) fluorenyl.
  • "Substituted" for Z in the above formula (4) means that at least one hydrogen atom is substituted with a C6 to C10 aryl group, a hydroxy group , a cyano group or a C1 to C10 alkyl group.
  • the compound of Formula 4 may comprise one or more of the following Formulas 4-1 to 4-6:
  • the compound of formula (IV) can be prepared by a conventional method known to a person skilled in the art.
  • the compound of Formula 4 is included in the thermosetting resin composition for sealing a semiconductor device in an amount of about 0.01 wt% to about 5 wt%, for example, about 0.02 wt% to about 1.5 wt%, such as about 0.05 wt% to about 1 wt% .
  • the inorganic filler is intended to improve the mechanical properties of the composition and achieve low stress.
  • the inorganic filler may be any inorganic filler commonly used in semiconductor encapsulants and is not particularly limited. Examples of the inorganic filler include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, . These may be used alone or in combination.
  • fused silica having a low linear expansion coefficient is used for low stress.
  • the fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials.
  • shape and the particle diameter of the fused silica are not particularly limited, spherical fused silica having an average particle diameter of about 5 to about 3 ⁇ ⁇ and about 50 to about 99% by weight of spherical fused silica having an average particle diameter of about 0.001 to about 1 ⁇ To about 100% by weight, based on the total filler, of a fused silica mixture comprising from about 1% to about 50% by weight of the composition.
  • the maximum particle diameter can be adjusted to any one of about 45 ⁇ , about 55 ⁇ , and about 75 ⁇ , depending on the application. Since the spherical fused silica may contain conductive carbon as a foreign substance on the surface of the silica, it is also important to select a substance having a small amount of polar foreign substances.
  • the amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength.
  • the inorganic filler may comprise from about 70 wt% to about 95 wt%, such as from about 75 wt% to about 94 wt%, or from about 80 wt% to about 93 wt%, of the thermosetting resin composition for encapsulating semiconductor devices . Within this range, there can be obtained an effect of ensuring the fluidity and reliability of the composition.
  • thermosetting resin composition for sealing a semiconductor device may further include at least one of a coupling agent, a releasing agent, a colorant, an antioxidant, a flame retardant, and a stress relaxation agent.
  • the coupling agent is for improving the interface strength by reacting with a maleimide compound, a benzoxazine compound and an inorganic filler, and may be, for example, a silane coupling agent.
  • the silane coupling agent is not particularly limited as long as it reacts with the maleimide compound, the benzoxazine compound and the inorganic filler to improve the interface strength between the maleimide compound and the benzoxazine compound and the inorganic filler.
  • Specific examples of the silane coupling agent include epoxy silane, aminosilane, ureidosilane, mercapto silane, and alkyl silane.
  • the coupling agent may be used alone or in combination.
  • the coupling agent may be included in the thermosetting resin composition for encapsulating semiconductor devices in an amount of about 0.01 wt% to about 5 wt%, preferably about 0.05 wt% to about 3 wt%.
  • the strength of the cured product of the thermosetting resin composition for sealing semiconductor devices can be improved in the above range.
  • At least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used.
  • the release agent may be included in the thermosetting resin composition for sealing a semiconductor element in an amount of about 0.1 wt% to about 1 wt%.
  • the coloring agent is for laser marking of the semiconductor element sealing material, and coloring agents well known in the art can be used and are not particularly limited.
  • the colorant may include one or more of carbon black, titanium black, titanium nitride, dicopper hydroxide phosphate, iron oxide, mica.
  • the colorant may be included in the thermosetting resin composition for encapsulating semiconductor devices in an amount of about 0.01 wt% to about 1 wt%, preferably about 0.05 wt% to about 0.5 wt%.
  • the stress relieving agent may include a silicone-based compound such as silicone oil.
  • the stress relieving agent may be included in the thermosetting resin composition for encapsulating semiconductor devices in an amount of about 0.01 wt% to about 5 wt%, preferably about 0.05 wt% to about 3 wt%.
  • thermosetting resin composition for sealing a semiconductor device of the present invention may contain an antioxidant such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane;
  • an antioxidant such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane;
  • a flame retardant such as aluminum hydroxide, and the like may be further added as needed.
  • thermosetting resin composition for sealing a semiconductor device of the present invention may further comprise an epoxy resin.
  • the epoxy resin epoxy resins generally used for sealing semiconductor devices can be used and are not particularly limited.
  • the epoxy resin an epoxy compound containing two or more epoxy groups in the molecule can be used.
  • the epoxy resin is an epoxy resin obtained by epoxidating a condensate of phenol or alkyl phenol and hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a multifunctional epoxy Resin, naphthol novolak type epoxy resin, novolak type epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy resin, dicyclopenta Diene-based epoxy resins, and biphenyl-type epoxy resins.
  • the epoxy resin may include at least one of a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a cresol novolak type epoxy resin, and a multifunctional epoxy resin.
  • a polyfunctional epoxy resin can be used as the epoxy resin.
  • An epoxy resin having an epoxy equivalent of 100 g / eq to 500 g / eq can be used in consideration of the curing properties. Within the above range, the degree of curing can be increased.
  • the epoxy resin may be used alone or in combination.
  • the epoxy resin may contain other components such as a maleimide compound, a benzoxazine compound, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent, and a line such as a melt master batch It can also be used in the form of an additional compound made by the reaction.
  • the epoxy resin may be included in the thermosetting resin composition for sealing a semiconductor device in an amount of about 20% by weight or less, for example, about 0.5% by weight to about 10% by weight, specifically about 0.5% by weight to about 5% by weight. Within this range, the curability of the composition may not be deteriorated.
  • thermosetting resin composition for sealing a semiconductor device is prepared by uniformly mixing the above components uniformly at a predetermined mixing ratio using a Hensel mixer or Lodige mixer and then kneading the mixture in a roll- kneaded in a kneader, and then cooled and pulverized to obtain a final powder product.
  • thermosetting resin composition of the present invention as described above is usefully applied to semiconductor devices, particularly semiconductor devices mounted on mobile displays or automobile fingerprint recognition sensors.
  • a method of sealing a semiconductor element using the thermosetting resin composition obtained in the present invention a low-pressure transfer molding method can be generally used.
  • the semiconductor device according to the present invention can be sealed with the thermosetting resin composition for sealing semiconductor devices of the present invention.
  • the semiconductor device according to the present invention may include a semiconductor element sealed with the thermosetting resin composition for sealing a semiconductor device of the present invention.
  • thermosetting resin composition for sealing a semiconductor device.
  • Hardness (Shore D hardness): Using a MPL (Multi Plunger System) molding machine equipped with a mold for a TQFP (Thin Quad Flat Package) package having a width of 24 mm, a length of 24 mm and a thickness of 1 mm including a copper metal element After curing the composition to be evaluated at 175 ° C for 50, 60, 70, 80 and 90 seconds, the hardness of the cured product was measured by a Shore-D type hardness meter directly on the padding on the mold. The higher the value, the better the degree of cure.
  • MPL Multi Plunger System
  • TQFP Thin Quad Flat Package
  • Fluidity Spiral flow: The composition was injected into a mold for spiral flow measurement according to EMMI-1-66 at a molding temperature of 175 ⁇ and a molding pressure of 70 kgf / cm 2 using a low pressure transfer molding press, (Length of idle motion) (unit: inch) was measured. The higher the measured value, the better the fluidity.
  • thermosetting resin composition for sealing a semiconductor device of the present invention had a high degree of curing and was excellent in storage stability and fluidity.
  • Comparative Example 1 or 2 including phosphine which is not a phosphonium salt had a problem of lowering of hardenability and storage stability.
  • Comparative Example 3 or 4 including a phosphine other than a phosphonium salt was not cured within 90 seconds.
  • Comparative Example 6 or 8 containing a phosphonium salt other than the compound of the formula (4) was not cured within 90 seconds.
  • Comparative Example 5 or 7 containing a phosphonium salt other than the compound of the formula (4) had a problem of lowering the curing degree although the curing was possible within 90 seconds.

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  • Chemical Kinetics & Catalysis (AREA)
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  • Polymers & Plastics (AREA)
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  • Computer Hardware Design (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

La présente invention concerne une composition de résine thermoplastique destinée à étanchéifier un dispositif à semi-conducteurs, cette composition contenant un composé maléimide, un composé benzoxazine, un composé de formule chimique 4, et une charge inorganique, ainsi qu'un dispositif à semi-conducteurs étanchéifié à l'aide de celle-ci.
PCT/KR2018/010761 2017-12-29 2018-09-13 Composition de résine thermoplastique destinée à étanchéifier un dispositif à semi-conducteurs et dispositif à semi-conducteurs étanchéifié à l'aide de celle-ci WO2019132176A1 (fr)

Priority Applications (1)

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CN201880084029.9A CN111527122A (zh) 2017-12-29 2018-09-13 用于密封半导体设备的热塑性树脂组合物及使用其密封的半导体设备

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KR1020170184885A KR20190081987A (ko) 2017-12-29 2017-12-29 반도체 소자 밀봉용 열경화성 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자
KR10-2017-0184885 2017-12-29

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002105171A (ja) * 2000-09-29 2002-04-10 Sumitomo Bakelite Co Ltd 積層板用エポキシ樹脂組成物、並びにこれを用いたプリプレグおよび積層板
KR20150037568A (ko) * 2013-09-30 2015-04-08 주식회사 엘지화학 반도체 패키지용 열경화성 수지 조성물과 이를 이용한 프리프레그 및 금속박 적층판
KR20160021783A (ko) * 2013-06-21 2016-02-26 스미토모 베이클리트 컴퍼니 리미티드 반도체 봉지용 수지 조성물 및 반도체 장치
US9296928B2 (en) * 2011-07-28 2016-03-29 Protavic Korea Co., Ltd. Flexible bismaleimide, benzoxazine, epoxy-anhydride adduct hybrid adhesive
KR20160123471A (ko) * 2015-04-15 2016-10-26 삼성에스디아이 주식회사 포스포늄계 화합물, 이를 포함하는 에폭시수지 조성물, 및 이를 사용하여 제조된 반도체 소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002105171A (ja) * 2000-09-29 2002-04-10 Sumitomo Bakelite Co Ltd 積層板用エポキシ樹脂組成物、並びにこれを用いたプリプレグおよび積層板
US9296928B2 (en) * 2011-07-28 2016-03-29 Protavic Korea Co., Ltd. Flexible bismaleimide, benzoxazine, epoxy-anhydride adduct hybrid adhesive
KR20160021783A (ko) * 2013-06-21 2016-02-26 스미토모 베이클리트 컴퍼니 리미티드 반도체 봉지용 수지 조성물 및 반도체 장치
KR20150037568A (ko) * 2013-09-30 2015-04-08 주식회사 엘지화학 반도체 패키지용 열경화성 수지 조성물과 이를 이용한 프리프레그 및 금속박 적층판
KR20160123471A (ko) * 2015-04-15 2016-10-26 삼성에스디아이 주식회사 포스포늄계 화합물, 이를 포함하는 에폭시수지 조성물, 및 이를 사용하여 제조된 반도체 소자

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CN111527122A (zh) 2020-08-11

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