WO2019119284A1 - Oled显示面板的像素的共振腔结构和oled显示面板 - Google Patents

Oled显示面板的像素的共振腔结构和oled显示面板 Download PDF

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WO2019119284A1
WO2019119284A1 PCT/CN2017/117333 CN2017117333W WO2019119284A1 WO 2019119284 A1 WO2019119284 A1 WO 2019119284A1 CN 2017117333 W CN2017117333 W CN 2017117333W WO 2019119284 A1 WO2019119284 A1 WO 2019119284A1
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layer
resonant cavity
cavity structure
refractive index
structure according
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French (fr)
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洪定洋
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to KR1020207020951A priority Critical patent/KR20200094791A/ko
Priority to CN201780095850.6A priority patent/CN111201628A/zh
Priority to PCT/CN2017/117333 priority patent/WO2019119284A1/zh
Publication of WO2019119284A1 publication Critical patent/WO2019119284A1/zh
Priority to US16/905,187 priority patent/US20200321413A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a resonant cavity structure of a pixel of an organic light emitting diode (OLED) display screen and an OLED display panel.
  • OLED organic light emitting diode
  • a resonant cavity structure of a pixel of an OLED display panel in the related art is formed with a resonant cavity in a through groove formed by a pixel defining layer (PDL).
  • PDL pixel defining layer
  • the present invention provides a resonant cavity structure of a pixel of an OLED display panel.
  • the resonant cavity structure of an embodiment of the present invention can be used for pixels of an OLED display panel.
  • the resonant cavity structure includes a PDL, a resonant cavity, and a reflective film.
  • the PDL is formed with a through groove and includes a through groove side.
  • the resonant cavity is formed in the through groove, and the reflective film is formed in the through groove and covers the side surface of the through groove.
  • An OLED display panel includes a TFT substrate and a plurality of pixels formed on the TFT substrate and arranged in an array, each of the pixels including a resonant cavity structure.
  • the resonant cavity structure and the OLED display panel of the embodiment of the present invention cover the reflective film on the side of the through-channel, and reflect the light that is incident on the PDL back to the resonant cavity to increase the light emission rate of the pixel.
  • FIG. 1 is a partial cross-sectional view showing an OLED display panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic plan view of an OLED display panel according to an embodiment of the present invention.
  • Fig. 3 is a schematic view showing the operation principle of the resonator structure of the related art.
  • FIG. 4 is a schematic view showing the working principle of a resonant cavity structure according to an embodiment of the present invention.
  • Fig. 5 is a schematic view showing a stacking order and thickness of a reflective film material according to an embodiment of the present invention.
  • Fig. 6 is a view showing a light-emitting spectrum of a reflective film material in accordance with an embodiment of the present invention.
  • OLED display panel 1000 pixel 100, resonant cavity structure 10, anode layer 11, anode layer top surface 112, PDL 12, through groove 122, through groove side 1222, PDL top surface 124, reflective film 16, empty
  • the hole layer 13 the cavity portion 132, the extension portion 134, the light-emitting layer 15, the electron layer 17, the cathode layer 18, the resonant cavity 14, the TFT substrate 200, and the light extraction layer 300.
  • the resonant cavity structure 10 of the embodiment of the present invention may be applied to the pixels 100 of the OLED display panel 1000 .
  • the resonant cavity structure 10 includes a PDL 12, a resonant cavity 14, and a reflective film 16.
  • the PDL 12 is formed with a through groove 122 and includes a through groove side surface 1222.
  • the resonant cavity 14 is formed in the through slot 122.
  • the reflective film 16 is formed in the through groove 122 and covers the through groove side surface 1222.
  • the OLED display panel 1000 includes a TFT substrate 200 and a plurality of pixels 100 formed on the TFT substrate 200 and arranged in an array.
  • the resonant cavity structure 10 and the OLED display panel 1000 of the embodiment of the present invention can reflect the light incident on the PDL 12 back to the resonant cavity 14 by covering the reflective film 16 on the PDL 12, thereby finally emitting light and improving light extraction efficiency.
  • the OLED display panel 1000 belongs to an organic light emitting diode, an organic electric laser display or an organic light emitting semiconductor technology, and has the advantages of self-luminous, wide viewing angle, high contrast, low power consumption, high reaction speed, etc., and has been more and more popular, and the more The more widely used applications, for example, the OLED display panel 1000 of the embodiment of the present invention can be applied to consumer electronic products such as mobile phones or tablet computers, and has high economic value.
  • the OLED display panel 1000 can be used to display a picture, and each pixel 100 can be used to display picture information such as color and brightness of one pixel 100 of the picture.
  • the PDL 12 can be made of an organic photoresist, but is not limited to the above materials, and a suitable material can be used according to specific needs.
  • An organic photoresist also known as a photoresist, is an organic compound, a light-sensitive mixed liquid composed of three main components of a photosensitive resin, a sensitizer, and a solvent. After the photosensitive resin is irradiated, the photocuring reaction can be quickly performed in the exposed region, so that the physical properties of the material, particularly solubility, affinity, and the like are significantly changed. The desired image can be obtained by treating the soluble fraction with a suitable solvent.
  • Organic photoresist is an important material in the field of micro-manufacturing. It is the core technology of the semiconductor industry. It is widely used in the processing of fine graphic circuits in the optoelectronic information industry. It is an important material for fine processing technology.
  • the through groove 122 has a truncated cone shape, and the through groove 122 is formed with a through groove side surface 1222, and the through groove side surface 1222 is a slope that slopes upward and outward.
  • the through groove 122 has a regular shape and is easy to process and manufacture.
  • the channel side surface 1222 can shorten the transmission distance of the light in the OLED display panel 1000, reduce the energy loss of the light during transmission, and improve the transmission efficiency.
  • the PDL 12 may not be limited to the materials mentioned in the above embodiments, and the shapes of the through grooves 122 and the through groove sides 1222 may also be suitable materials and shapes according to specific needs, and are not limited to the shapes discussed in the above embodiments.
  • the reflectance of the reflective film 16 for light of a predetermined wavelength range is greater than a predetermined value and the reflectance of light outside the predetermined wavelength range is less than the predetermined value.
  • the reflective film 16 can cooperate with the resonant cavity structure 10 to adjust the light spectrum, thereby making the OLED display panel 1000 have a prominent display effect.
  • an array of color pixels 100 is generally included, for example, a Bayer pattern. Therefore, for each pixel 100, it is required to output only a predetermined color (i.e., a predetermined wavelength range) such as red (R), green (G), or blue (B).
  • the self-illuminating light has a broad spectrum
  • the resonant cavity 14 can be screened for a predetermined wavelength of light by a predetermined design (for example, designing the optical path length of the resonant cavity 14).
  • the auxiliary wavelength adjustment effect of the reflective film 16 is superimposed, and the spectrum of the emitted light of the resonant cavity 14 can be further improved, and the color display effect of the OLED display panel 1000 can be improved.
  • the improvement effect of the reflective film 16 on the light emission spectrum will be described below by taking the green pixel 100 of the OLED display panel 1000 as an example.
  • FIG. 3 is a schematic diagram showing the light emission spectrum of the resonant cavity structure 10 of the pixel 100 in front of the reflective film 16 .
  • the horizontal axis represents the wavelength of the light
  • the vertical axis represents the light efficiency
  • the curve A is a self-luminous spectral curve, or the spectral curve of the wavelength is not filtered by the resonant cavity 14, and the curve B is the wavelength filtered by the resonant cavity 14. After the spectral curve.
  • the resonant cavity 14 It can be seen that almost no visible light can be emitted before being filtered by the resonant cavity 14, and there is a relatively large emission efficiency, and after passing through the resonant cavity 14, only a part of the wavelength (for example, 524 nm to 540 nm, that is, a predetermined wavelength range) is obtained.
  • the emission efficiency is high (for example, more than 60%, that is, a predetermined value).
  • FIG. 4 is a schematic diagram of the light emission spectrum curve of the resonant cavity structure 10 of the green pixel 100 after the reflective film 16 is added.
  • the horizontal axis represents the wavelength of the light
  • the vertical axis represents the light efficiency, wherein the curve A is a self-luminous spectral curve, or the spectral curve of the wavelength is not filtered through the resonant cavity 14, and the curve B' is through the resonant cavity 14
  • the spectral curve after the wavelength is screened. It can be seen that after the reflection film 16 is increased, the spectral characteristics are improved, the light extraction efficiency of the light in the predetermined wavelength range is higher, and the light extraction efficiency of the light outside the predetermined wavelength range is further suppressed.
  • the reflective film 16 may include an alternating stack structure of a high refractive index layer and a low refractive index layer, the high refractive index may be 1.97 or more, and the low refractive index may be 1.38 or less.
  • the high refractive index layer may have a thickness of 68.52 nm and the low refractive index layer may have a thickness of 97.83 nm.
  • the high refractive index layer can be made of ZrO2, and the low refractive index layer can be made of MgO2.
  • ZrO2 and MgO2 have the properties of high melting point, high electrical resistivity, high refractive index and low thermal expansion coefficient.
  • the structure of the reflective film 16 is stable, the process is simple, and the production cost can be reduced.
  • the high and low refractive index layers may be 9 layers, the high refractive index layer may be the first, third, fifth, seventh, and ninth layers, and the low refractive index layer may be the second, fourth, sixth, and eighth layers.
  • the reflective film 16 may have a 9-layer structure, a material, an optical thickness (QWOT), and a thickness as shown in the table.
  • QWOT optical thickness
  • Fig. 6 there is shown a spectral characteristic diagram of the reflective film 16 corresponding to the example shown in Fig. 5, in which the horizontal axis represents the wavelength and the vertical axis represents the reflectance. It can be seen that the reflection film has a reflectance of 40% or more at an operating wavelength of 450-650 nm, a peak value of 500-550 nm, and a reflectance of more than 90%, and has an ideal reflection spectrum characteristic.
  • the reflective film 16 may not be limited to the materials, thickness, stacking order, and refractive index mentioned above, and may be made of a suitable material, thickness, stacking order, and refractive index according to specific needs.
  • the resonant cavity structure 10 further includes an anode layer 11, a hole layer 13, a light emitting layer 15, an electron layer 17, and a cathode layer 19.
  • the PDL 12 is formed on the anode layer 11.
  • the hole layer 13 is formed on the anode layer 11.
  • the light emitting layer 15 is formed on the hole layer 13.
  • the electron layer 17 is formed on the light emitting layer 15.
  • a cathode layer 18 is formed on the electron layer 17.
  • the anode layer 11 and the cathode layer 18 form a resonant cavity 14, and the distance between the anode layer 11 and the cathode layer 18 may be the optical path length of the resonant cavity 14.
  • the OLED display panel 1000 employs an upper emission type OLED display technology, and by energizing the anode layer 11 and the cathode layer 19, holes of the electron and hole layers 13 via the electron layer 17 are combined and emitted in the light-emitting layer 15 The light resonates in the resonant cavity 14 to achieve a better illuminating effect.
  • the anode layer 11 may employ a high work function and a light transmissive organic material such as Indium tin oxide (ITO).
  • ITO Indium tin oxide
  • ITO is a metal compound with good transparent conductivity. It has the characteristics of forbidden bandwidth, high light transmittance in the visible spectrum and low resistivity. It is widely used in flat panel display devices, solar cells, special function window coatings and other optoelectronics. Device field.
  • the material of the anode layer 11 is not limited to ITO, and a suitable material can be used according to specific needs.
  • the hole layer 13 includes an intraluminal portion 132 and an extension portion 134.
  • the intracavity portion 132 is formed in the through groove 122, covering the anode layer top surface 112 and the reflective film 16.
  • the extension portion 134 extends from the intracavity portion 132 to cover the PDL top surface 124.
  • the hole layer 13 serves as a hole transporting function, and is generally prone to heat agglomeration in an operating state, and the required material not only needs to have high electron transport efficiency but also has excellent surface stability. Therefore, in some embodiments, the hole layer 13 may be an aromatic amine fluorescent compound, and may be made of at least one of TPD and TADTA, but is not limited to one type, and may be specifically selected according to specific needs.
  • electrons are combined to emit light in the light-emitting layer 15, and the light-emitting layer 15 is the same material as the electron layer 17 or the hole layer 13.
  • the light-emitting layer 15 discussed herein is the same as the electron layer material and may be at least Alq, Baq, DPVBi. One is made, but not limited to one.
  • Alq is used for green light, while Balq and DPVBi are applied to blue light.
  • the above materials have high film stability, thermal stability and excellent electron transportability, which can improve luminosity, reduce component loss and prolong service life.
  • the electron layer 17 material is a fluorescent dye compound, and may be made of at least one of Alq, Znq, Gaq, Bebq, Balq, DVPBi, ZnSPB, PBD, OXD, BBOT, but is not limited to one.
  • the above materials have the characteristics of strong fluorescence in the solid state, good carrier transport performance, good thermal stability and chemical stability, high quantum efficiency, and vacuum evaporation, and are easy to obtain, and can reduce production costs.
  • the cathode layer 18 may be a metal or alloy having a low work function, for example, may be made of at least one of Al, Ag, Mg, Mg-Ag, but is not limited to one.
  • the above materials are light in weight, low in density, good in heat dissipation and strong in pressure resistance, and can fully meet the requirements of high integration, thinness, miniaturization, anti-collision and heat dissipation, and have good electrical conductivity and can be increased.
  • the luminous efficiency of the component reduces the production cost.
  • the anode layer 11, the PDL 12, the reflective film 16, the hole layer 13, the light-emitting layer 15, the electron layer 17, and the cathode layer 18 may be formed at a position by a vacuum evaporation process, for example, A vacuum evaporation process using an organic film and a vacuum evaporation process of a metal electrode.
  • the OLED display panel 1000 requires evaporation of a plurality of organic thin films in a high vacuum chamber, the quality of which is related to the quality and lifetime of the OLED display panel 1000.
  • a high vacuum chamber a plurality of evaporation boats for placing organic materials are provided, the evaporation boat is used to evaporate the organic materials, and the quartz crystal oscillator is used to control the film thickness.
  • the ITO is placed on a heated rotating sample holder, and a metal mask placed underneath controls the evaporation pattern. The evaporation experiment was carried out on our vacuum evaporation equipment.
  • the experimental results show that the evaporation temperature of organic materials is generally between 170 °C and 400 °C, the substrate temperature of ITO samples is between 100 °C and 150 °C, and the evaporation rate is at 1 crystal vibration point.
  • the effect of evaporation of 10 crystal vibration points/second (i.e., about 0.1 nm to 1 nm/s) and the degree of vacuum of the evaporation chamber at 5 ⁇ 10 -4 Pa to 3 ⁇ 10 -4 Pa is preferable.
  • the metal electrode of the OLED display panel 1000 is still vapor-deposited in a vacuum chamber, and the metal electrode usually uses a reactive metal having a low work function, so that evaporation is performed after the evaporation of the organic material film is completed.
  • metal electrodes are Mg/Ag, Mg: Ag/Ag, Li/Al, Lif/Al, and the like.
  • Boats used for metal electrode evaporation are usually made of materials such as molybdenum, tantalum and tungsten for use in different metal electrode evaporation (mainly to prevent the boat metal from reacting with the vapor-deposited metal).
  • the evaporation of the metal electrode material is generally expressed by the heating current. The evaporation test is performed on our vacuum evaporation equipment.
  • the experimental results show that the evaporation heating current of the metal electrode material is generally between 70a and 100a (the individual metal should exceed 100a).
  • the substrate temperature of the ITO sample is about 80 ° C
  • the evaporation rate is 5 crystal oscillation points to 50 crystal vibration points / second (that is, about 0.5 nm to 5 nm / s)
  • the vacuum degree of the evaporation chamber is 7 ⁇ 10 -4 Pa to 5 ⁇ 10 -4 Pa. The effect of vapor deposition is better.
  • the vacuum evaporation process is simple, and the obtained layers have high purity, which can effectively improve the quality of components, improve work efficiency, and reduce production costs.
  • the processing between the layers is not limited to the vacuum evaporation process, and a more suitable treatment method can be adopted according to specific needs.
  • the ITO substrate 200 can be pretreated during the manufacturing process.
  • the pretreatment of the ITO substrate 200 may include the following pretreatment process.
  • ITO Indium Tin Oxide
  • ITO fabricated by RF sputtering is susceptible to poor process control factors resulting in surface irregularities that can result in surface materials or protrusions.
  • the high temperature calcination and recrystallization process also produces a raised layer having a surface of about 10 to 30 nm.
  • the path formed between the fine particles of the uneven layer provides the opportunity for holes to be directed toward the cathode, and these intricate paths increase the leakage current.
  • One is to increase the thickness of the hole layer to reduce leakage current. This method is mostly used for polymer light-emitting diodes and OLEDs with thick hole layers ( ⁇ 200 nm).
  • the second is to reprocess the ITO glass to make the surface smooth.
  • the third is to use other coating methods to make the surface flatter.
  • the second is the increase in ITO work function.
  • ITO work function When holes are injected into the light-emitting layer 15 by ITO, an excessive potential difference causes a Schindler barrier, so that holes are not easily implanted. Therefore, how to reduce the potential difference of the interface of the ITO/light-emitting layer 15 becomes the focus of ITO pretreatment.
  • O2-Plasma method to increase the saturation of oxygen atoms in ITO to increase the work function.
  • the work function of ITO after O2-Plasma treatment can be increased from 4.8 eV to 5.2 eV, which is very close to the work function of the light-emitting layer 15.
  • auxiliary electrode When the auxiliary electrode is added, since the pixel 100 of the OLED display panel 1000 is a current driving component, when the external circuit is too long or too thin, a serious voltage gradient will be caused in the external circuit, so that the pixel 100 component actually falls on the OLED display panel 1000. The voltage drops, resulting in reduced panel illumination. Since the ITO resistance is too large (10 ohm/square), it is easy to cause unnecessary external power consumption. Increasing an auxiliary electrode to lower the voltage gradient becomes a shortcut for increasing the luminous efficiency and reducing the driving voltage. Chromium (Cr: Chromium) metal is commonly used as an auxiliary electrode material, which has the advantages of good environmental factor stability and greater selectivity to the etching solution.
  • the process for the cathode layer 18 includes isolating the fine cathode layer 18 in the high resolution OLED display panel 1000.
  • the general method used is a mushroom structure approach, which is similar to the negative photoresist of the printing technique. Development technology.
  • many process variation factors affect the quality and yield of the cathode layer 18. For example, bulk resistance, dielectric constant, high resolution, high Tg, loss of low critical dimension (CD), and proper adhesion to ITO or other organic layers.
  • the TFT substrate 200 is the first layer of the entire OLED display panel pixel 100, providing a stable structure for the entire OLED display panel pixel 100.
  • the TFT substrate 200 has good use characteristics, low consumption, low driving voltage, high safety for solid use, and has many features such as flat panel, thin and light, convenient and flexible use, easy maintenance, update, upgrade, and long service life.
  • the OLED display panel 1000 of the embodiment of the present invention includes a TFT substrate 200, a plurality of OLED display panels 1000 formed on the TFT substrate 200 and arranged in an array, and a light extraction layer 30 formed on the cathode. On layer 18.
  • the resonant cavity 14 of the embodiment of the present invention can reflect the light incident on the PDL 12 back to the resonant cavity 14 by covering the reflective film 16 on the PDL 12, thereby finally emitting light and improving light extraction efficiency.
  • the pixels 100 of the OLED display panel 1000 are generally continuously distributed on the TFT substrate 200 to constitute the OLED display panel 1000. Therefore, the PDL 12 can be continuously distributed on the TFT substrate 200, and FIG. 1 is only a partial schematic view.
  • stacking In the description of the embodiments of the present invention, it should be noted that the terms “stacking”, “forming”, “reflecting” and the like should be understood broadly, unless otherwise explicitly defined and defined, for example, all stacking, It may be partially stacked, or indirectly stacked; it may be physically formed or chemically formed; it may be direct reflection or indirect reflection through an intermediate medium.
  • stacking it may be partially stacked, or indirectly stacked; it may be physically formed or chemically formed; it may be direct reflection or indirect reflection through an intermediate medium.
  • specific meanings of the above terms in the embodiments of the present invention can be understood on a case-by-case basis.

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Abstract

一种OLED显示面板(1000)的像素(100)的共振腔结构(10)。共振腔结构(10)包括形成有通槽(122)并具有通槽侧面(1222)的PDL(12)、形成于通槽(122)内的共振腔(14)和形成于通槽(122)内且覆盖通槽侧面(1222)的反射膜(16)。共振腔(14)通过在PDL(12)上覆盖反射膜(16)，可将射向PDL(12)的光线反射回共振腔(14)从而能最终出光，提高出光效率。

Description

OLED显示面板的像素的共振腔结构和OLED显示面板 技术领域
本发明涉及显示器技术领域，特别涉及一种有机发光二极管(organic light emitting diode,OLED)显示屏的像素的共振腔结构和OLED显示面板。
背景技术
相关技术中的OLED显示面板的像素的共振腔结构在像素定义层(Pixel Define Layer，PDL)形成的通槽内形成有共振腔。工作时，共振腔内的部分光线可能射向PDL并被PDL材料吸收或折射出共振腔，无法最终出射，导致OLED显示面板的像素的出光效率下降。
发明内容
有鉴于此，本发明提供了一种OLED显示面板的像素的共振腔结构。
本发明实施方式的共振腔结构可以用于OLED显示面板的像素。共振腔结构包括PDL、共振腔和反射膜。PDL形成有通槽并包括有通槽侧面。共振腔形成于通槽内，反射膜形成于通槽内且覆盖通槽侧面。
本发明实施方式的OLED显示面板包括TFT基板和多个形成于TFT基板上且呈阵列排布的像素，每个像素包括共振腔结构。
本发明实施方式的共振腔结构和OLED显示面板通过在通槽侧面覆盖反射膜，将射向PDL的光线反射回共振腔从而提升像素的光线出射率。
本发明实施方式的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的实施方式的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是本发明实施方式的OLED显示面板的部分剖面示意图。
图2是本发明实施方式的OLED显示面板的平面示意图。
图3是相关技术的共振腔结构的工作原理示意图。
图4是本发明实施方式的共振腔结构的工作原理示意图。
图5是本发明实施方式的反射膜材料堆叠顺序与厚度的示意图。
图6是本发明实施方式的反射膜材料搭配共振腔结构的出光频谱图。
主要元件符号说明：OLED显示面板1000、像素100、共振腔结构10、阳极层11、阳极层顶面112、PDL 12、通槽122、通槽侧面1222、PDL顶面124、反射膜16、空穴层13、腔内部分132、外延部分134、发光层15、电子层17、阴极层18、共振腔14、TFT基板200、光取出层300。
具体实施方式
下文的公开提供了许多不同的实施方式或例子用来实现本发明的实施方式的不同结构。为了简化本发明的实施方式的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明的实施方式可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明的实施方式提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
流程图中或在此以其他方式描述的任何过程或方法描述可以被理解为，表示包括一个或更多个用于实现特定逻辑功能或过程的步骤的可执行指令的代码的模块、片段或部分，并且本发明的优选实施方式的范围包括另外的实现，其中可以不按所示出或讨论的顺序，包括根据所涉及的功能按基本同时的方式或按相反的顺序，来执行功能，这应被本发明的实施例所属技术领域的技术人员所理解。
请参阅图1和图2，本发明实施方式的共振腔结构10可以应用于OLED显示面板1000的像素100。共振腔结构10包括PDL 12、共振腔14和反射膜16。PDL 12形成有通槽122并包括有通槽侧面1222。共振腔14形成于通槽122内。反射膜16形成于通槽122内且覆盖通槽侧面1222。
本发明实施方式OLED显示面板1000包括TFT基板200和多个形成于TFT基板200上且呈阵列排布的像素100。
本发明实施方式的共振腔结构10和OLED显示面板1000通过在PDL 12上覆盖反射膜16，可将射向PDL 12的光线反射回共振腔14从而能最终出光，提高出光效率。
OLED显示面板1000属于有机发光二极管、有机电激光显示或者有机发光 半导体技术，具有自发光、广视角、高对比度、低耗电、较高反应速度等优点，已经越来越受到欢迎，并得到越来越广泛的应用，例如，本发明实施方式的OLED显示面板1000可以应用于手机或平板电脑等消费性电子产品，具有较高的经济价值。
工作的时候，OLED显示面板1000可以用于显示画面，而每个像素100可以用于显示画面的一个像素100的颜色和亮度等画面信息。
在某些实施方式中，PDL 12可以由有机光刻胶制成，但不仅限于上述材料，可根据具体需求采用合适的材料。
有机光刻胶又称光致抗蚀剂，是一种有机化合物，由感光树脂、增感剂和溶剂三种主要成分组成的对光敏感的混合液体。感光树脂经光照后，在曝光区能很快地发生光固化反应，使得这种材料的物理性能，特别是溶解性、亲合性等发生明显变化。经适当的溶剂处理，溶去可溶性部分，能够得到所需图像。有机光刻胶是微制造领域重要的材料，是半导体工业核心的工艺技术，现广泛用于光电信息产业精细图形线路的加工制作，是精细加工技术的重要材料。
在某些实施方式中，通槽122呈倒圆台形，通槽122形成有通槽侧面1222，通槽侧面1222为向上向外倾斜的斜面。
如此，通槽122形状规则，易于加工、制造。而通槽侧面1222可以缩短光线在OLED显示面板1000内的传输距离，减少光线在传输过程中的能量损耗，提高传输效率。
当然，PDL 12可以不限于上述实施方式提到的材料，通槽122和通槽侧面1222的形状也可以根据具体需求采用合适的材料和形状，并不限于上述实施方式讨论的形状。
在某些实施方式中，反射膜16对预定波长范围的光线的反射率大于预定值而对所述预定波长范围外的光线的反射率小于所述预定值。
如此，反射膜16可以与共振腔结构10配合调整出光光谱，从而使OLED显示面板1000具有突出显示的效果。具体的，对于OLED显示面板1000，为了获得彩色显示效果，一般包括有彩色像素100阵列，例如以拜耳阵列(Bayer pattern)。因此，对于每个像素100，要求只能输出预定颜色(即预定波长范围)，例如红色(R)、绿色(G)或蓝色(B)。
一般自发光的光线都具有较宽的光谱，而共振腔14通过预定设计(例如设计共振腔14的光程长度)就可以筛选预定波长的光线出射。本发明实施方式在叠加 反射膜16的辅助波长调整效果，可以进一步改善共振腔14的出射光线的光谱，提升OLED显示面板1000的彩色显示效果。
下面以OLED显示面板1000的绿色的像素100为例说明增加反射膜16对出光光谱的改善效果。
请参阅图3，图3为增加反射膜16前绿色的像素100的共振腔结构10的出光光谱曲线示意图。其中，横轴表示光线的波长，纵轴表示出光效率，其中，曲线A为自发光的光谱曲线，或者说，未经过共振腔14筛选波长的光谱曲线，而曲线B为经过共振腔14筛选波长后的光谱曲线。可见，在未经过共振腔14筛选前，近乎整个可见光都可以出射，而且有比较大的出射效率，而在经过共振腔14后，只有部分波长(例如524nm～540nm，即预定波长范围)的光线的出射效率较高(例如超过60％，即预定值)。
请参阅图4，为增加反射膜16后绿色的像素100的共振腔结构10的出光光谱曲线示意图。同样的，横轴表示光线的波长，纵轴表示出光效率，其中，曲线A为自发光的光谱曲线，或者说，未经过共振腔14筛选波长的光谱曲线，而曲线B’为经过共振腔14筛选波长后的光谱曲线。可见，在增加反射膜16后，光谱特性得到改善，预定波长范围内的光线的出光效率更高，而预定波长范围外的光线的出光效率进一步受到抑制。
以上仅以绿色的像素100为例说明增加反射膜16后的出光光谱特性得到改善，可以理解，对于红色和蓝色的像素100具有同样情况，在这里不再累述。
在某些实施方式中，反射膜16可以包括高折射率层和低折射率层交替堆叠结构，高折射率可以大于等于1.97，低折射率可以小于等于1.38。
实验证明，采用这样的结构具有达到较高的反射效果。
在某些实施方式中，高折射率层的厚度可以为68.52nm，低折射率层的厚度可以为97.83nm。
实验证明，采用这样的厚度具有达到较高的反射效果。
高折射率层可以采用ZrO2制成，低折射率层可以采用MgO2制成。
ZrO2与MgO2具有高熔点、高电阻率、高折射率和低热膨胀系数的性质，作为反射膜16结构稳定，工艺简单，可以降低生产成本。
在某些实施方式中，高低折射率层可以为9层，高折射率层可以为第1、3、5、7、9层，低折射率层可以为第2、4、6、8层。
实验证明，采用这样的厚度具有达到较高的反射效果。
请参阅图5，作为一个例子，反射膜16可以采用如表格所示的9层结构(Layer)、材料(Material)、光学厚度(QWOT)和厚度(Thickness)。
请参阅图6，为对应图5所示例子的反射膜16的光谱特性曲线图，其中，横轴表示波长，纵轴表示反射率。可见，反射膜在工作波长450-650nm之间的反射率达到40％以上，峰值在500-550nm之间，反射率大于90％，具有较为理想的反射光谱特性。
当然，反射膜16可以不限于上述提到的材料、厚度、堆叠顺序与折射率高低，而可以根据具体需求采用合适的材料、厚度、堆叠顺序与折射率高低。
在某些实施方式中，共振腔结构10还包括阳极层11、空穴层13、发光层15、电子层17和阴极层19。PDL 12形成于阳极层11上。空穴层13形成于阳极层11上。发光层15形成于空穴层13上。电子层17形成于发光层15上。阴极层18形成于电子层17上。阳极层11与阴极层18形成共振腔14，阳极层11与阴极层18之间的距离可以为共振腔14的光程长度。
也即是说，OLED显示面板1000采用上发光型OLED显示技术，通过给阳极层11及阴极层19通电，将经由电子层17的电子及空穴层13的空穴在发光层15结合并发光，光线在共振腔14内进行光线共振从而取得较好的发光效果。
在某些实施方式中，阳极层11可以采用高功函数与可透光性的有机材料，例如氧化铟锡(Indium tin oxide，ITO)。
ITO是一种具有良好透明导电性能的金属化合物，具有禁带宽、可见光谱区光透射率高和电阻率低的特性，广泛地应用于平板显示器件、太阳能电池、特殊功能窗口涂层及其他光电器件领域。
当然，阳极层11材料也不限于ITO，而可以根据具体需求采用合适的材料。
在某些实施方式中，空穴层13包括腔内部分132和外延部分134。腔内部分132形成于通槽122内，覆盖阳极层顶面112和反射膜16。外延部分134自腔内部分132延伸，覆盖PDL顶面124。
空穴层13起电洞传输作用，在工作状态时通常易发生热聚集作用，所需材料不仅需要有很高的电子传输效率，也需具备优良的表面稳定性。因此，在某些实施方式中，空穴层13可以采用芳香胺荧光化合物，可以由TPD、TADTA中的至少一种制成，但不仅限于一种，可根据具体需求具体选择。
某些实施方式中，电子在发光层15结合发光，发光层15材料与电子层17或空穴层13相同，在此论述的发光层15与电子层材料相同，可以由Alq、Baq、 DPVBi至少一种制成，但不仅限于一种。
其中，Alq被用于绿光，而Balq和DPVBi则被应用于蓝光，以上材料制膜安定性高、热稳定且电子传输性优秀，能够提高发光率，减少部件损耗，延长使用寿命。
在某些实施方式中，电子层17材料为荧光染料化合物，可以由Alq、Znq、Gaq、Bebq、Balq、DVPBi、ZnSPB、PBD、OXD、BBOT至少一种制成，但不仅限于其中一种。
上述材料具备在固态下有较强荧光、载子传输性能好、热稳定性和化学稳定性性佳、量子效率高且能够真空蒸镀的特性，又容易获取，能够降低生产成本。
在某些实施方式中，阴极层18可以采用低功函数的金属或合金，例如可以由Al、Ag、Mg、Mg-Ag至少一种制成，但不仅限于其中一种。
上述材料质坚量轻、密度低、散热性较好、抗压性较强，能充分满足高度集成化、轻薄化、微型化、抗摔撞及散热的要求，有着良好的导电性能，可以增加元件的发光效率，降低生产成本。
在某些实施方式中，阳极层11、PDL 12、反射膜16、空穴层13、发光层15、电子层17、阴极层18，可以通过真空蒸镀工艺形成于所处位置上，例如可以采用有机薄膜的真空蒸镀工艺和金属电极的真空蒸镀工艺。
OLED显示面板1000需要在高真空腔室中蒸镀多层有机薄膜，薄膜的质量关系到OLED显示面板1000的质量和寿命。在高真空腔室中设有多个放置有机材料的蒸发舟，加热蒸发舟蒸镀有机材料，并利用石英晶体振荡器来控制膜厚。ITO放置在可加热的旋转样品托架上，其下面放置的金属掩膜板控制蒸镀图案。在我们的真空蒸镀设备上进行蒸镀实验，实验结果表明，有机材料的蒸发温度一般在170℃～400℃之间、ITO样品基底温度在100℃～150℃、蒸发速度在1晶振点～10晶振点/秒(即约0.1nm～1nm/s)、蒸发腔的真空度在5×10-4pa～3×10-4pa时蒸镀的效果较佳。
OLED显示面板1000的金属电极仍要在真空腔中进行蒸镀，金属电极通常使用低功函数的活泼金属，因此在有机材料薄膜蒸镀完成后进行蒸镀。常用的金属电极有Mg/Ag、Mg:Ag/Ag、Li/Al、Lif/Al等。用于金属电极蒸镀的舟通常采用钼、钽和钨等材料制作，以便用于不同的金属电极蒸镀(主要是防止舟金属与蒸镀金属起化学反应)。金属电极材料的蒸发一般用加热电流来表示，在我们的真空蒸镀设备上进行蒸镀实验，实验结果表明，金属电极材料的蒸发加热电流一 般在70a～100a之间(个别金属要超过100a)、ITO样品基底温度在80℃左右、蒸发速度在5晶振点～50晶振点/秒(即约0.5nm～5nm/s)、蒸发腔的真空度在7×10-4pa～5×10-4pa时蒸镀的效果较佳。
真空蒸镀工艺简单，得到的各层薄膜的纯度很高，能有效提升部件质量，提高工作效率，降低生产成本。
当然，各层间的处理工艺不限于真空蒸镀工艺，可根据具体需求采用更合适的处理方式。
制造过程中，可以对ITO基板200做前处理。
具体的，ITO基板200前处理可以包括以下前处理工艺。
其一为ITO表面平整度。ITO已广泛应用在商业化的显示器面板制造，其具有高透射率、低电阻率及高功函数等优点。一般而言，利用射频溅镀法(RFsputtering)所制造的ITO，易受工艺控制因素不良而导致表面不平整，进而产生表面的尖端物质或突起物。另外高温锻烧及再结晶的过程亦会产生表面约10～30nm的突起层。这些不平整层的细粒之间所形成的路径会提供空穴直接射向阴极的机会，而这些错综复杂的路径会使漏电流增加。一般有三个方法可以解决这表面层的影响。一是增加空穴层的厚度以降低漏电流，此方法多用于高分子发光二极管及空穴层较厚的OLED(～200nm)。二是将ITO玻璃再处理，使表面光滑。三是使用其它镀膜方法使表面平整度更好。
其二为ITO功函数的增加。当空穴由ITO注入发光层15时，过大的位能差会产生萧基能障，使得空穴不易注入，因此如何降低ITO/发光层15接口的位能差则成为ITO前处理的重点。一般我们使用O2-Plasma方式增加ITO中氧原子的饱和度，以达到增加功函数之目的。ITO经O2-Plasma处理后功函数可由原先之4.8eV提升至5.2eV，与发光层15的功函数已非常接近。
加入辅助电极，由于OLED显示面板1000的像素100为电流驱动组件，当外部线路过长或过细时，于外部电路将会造成严重之电压梯度，使真正落于OLED显示面板1000的像素100组件之电压下降，导致面板发光强度减少。由于ITO电阻过大(10ohm/square)，易造成不必要之外部功率消耗，增加一辅助电极以降低电压梯度成了增加发光效率、减少驱动电压的快捷方式。铬(Cr：Chromium)金属是常被用作辅助电极的材料，它具有对环境因子稳定性佳及对蚀刻液有较大的选择性等优点。然而它的电阻值在膜层为100nm时为2ohm/square，在某些应用时仍属过大，因此在相同厚度时拥有较低电阻值的铝(Al：Aluminum) 金属(0.2ohm/square)则成为辅助电极另一较佳选择。但是，铝金属的高活性也使其有信赖性方面之问题因此，多叠层之辅助金属则被提出，如：Cr/Al/Cr或Mo/Al/Mo，然而此类工艺增加复杂度及成本，故辅助电极材料的选择成为OLED显示面板1000工艺中的重点之一。
对于阴极层18的处理工艺包括在高解析的OLED显示面板1000中，将细微的阴极层18隔离，一般所用的方法为蘑菇构型法(Mushroom structure approach)，此工艺类似印刷技术的负光阻显影技术。在负光阻显影过程中，许多工艺上的变异因子会影响阴极层18的品质及良率。例如，体电阻、介电常数、高分辨率、高Tg、低临界维度(CD)的损失以及与ITO或其它有机层适当的黏着接口等。
TFT基板200是整个OLED显示面板像素100的第一层基础结构，为整个OLED显示面板像素100提供稳定的结构。
TFT基板200使用特性好、消耗低、驱动电压低、固体化使用安全性高，还具有平板化、轻薄化、使用方便灵活、维修、更新、升级容易，使用寿命长等许多特点。
本发明实施方式的OLED显示面板1000中，包括TFT基板200、形成于TFT基板200上且呈阵列排布的多个的OLED显示面板1000的像素100和光取出层30，光取出层30形成于阴极层18上。
本发明实施方式的共振腔14通过在PDL 12上覆盖反射膜16，可将射向PDL12的光线反射回共振腔14从而能最终出光，提高出光效率。
可以理解，OLED显示面板1000的像素100一般在TFT基板200上连续分布从而构成OLED显示面板1000，因此，PDL 12可以在TFT基板200上连续分布，图1只是局部的示意图。
在本发明的实施方式的描述中，需要理解的是，术语“上”、“下”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明的实施方式和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的实施方式的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本发明的实施方式的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明的实施方式的描述中，需要说明的是，除非另有明确的规定和限定，术语“堆叠”、“形成”、“反射”等应做广义理解，例如，可以是全部堆叠，也可以是部分堆叠，或间接堆叠；可以是物理形成，也可以是化学形成；可以是直接反射，也可以通过中间媒介间接反射。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明的实施方式中的具体含义。

Claims (19)

  1. 一种共振腔结构，用于OLED显示面板的像素，其特征在于，所述共振腔结构包括：
    PDL，所述PDL形成有通槽并包括有通槽侧面；
    形成于所述通槽内的共振腔；和
    形成于所述通槽内且覆盖所述通槽侧面的反射膜。
  2. 如权利要求1所述的共振腔结构，其特征在于，所述PDL由有机光刻胶制成。
  3. 如权利要求1所述的共振腔结构，其特征在于，所述通槽呈倒圆台形，所述通槽侧面为向上向外倾斜的斜面。
  4. 如权利要求1所述的共振腔结构，其特征在于，所述反射膜对预定波长范围的光线的反射率大于预定值，而对所述预定波长范围外的光线的反射率小于所述预定值。
  5. 如权利要求4所述的共振腔结构，其特征在于，所述反射膜包括高折射率层和低折射率层交替堆叠结构，所述高折射率的折射率大于等于1.97，所述低折射率层的低折射率小于等于1.38。
  6. 如权利要求4所述的共振腔结构，其特征在于，所述高折射率层的厚度为68.52nm，所述低折射率层厚度为97.83nm。
  7. 如权利要求4所述的共振腔结构，其特征在于，所述高折射率层采用ZrO2制成，所述低折射率层采用MgO2制成。
  8. 如权利要求4所述的共振腔结构，其特征在于，所述高折射率层包括第1、3、5、7、9层，所述低折射率层包括第2、4、6、8层。
  9. 如权利要求1所述的共振腔结构，其特征在于，所述共振腔结构包括：
    阳极层，所述PDL形成于所述阳极层上；
    空穴层，所述空穴层形成于所述阳极层上；
    发光层，所述发光层形成于所述空穴层上；
    电子层，所述电子层形成于所述发光层上；
    阴极层，所述阴极层形成于所述电子层上；
    所述阳极层和所述阴极层构成所述共振腔，所述阳极层和所述阴极层之间距离为所述共振腔的光程长度。
  10. 如权利要求9所述的共振腔结构，其特征在于，所述阳极层采用高功函数与可透光性的有机材料，至少由氧化铟锡制成。
  11. 如权利要求9所述的共振腔结构，其特征在于，所述空穴层包括：
    腔内部分，所述腔内部分形成于所述通槽内，覆盖所述阳极层顶面和所述反射膜；和
    外延部分，所述外延部分自所述腔内部分延伸，覆盖所述PDL与所述外延部分所接触的PDL顶面。
  12. 如权利要求9所述的共振腔结构，其特征在于，所述空穴层采用芳香胺荧光化合物，由TPD、TDATA至少一种制成。
  13. 如权利要求9所述的共振腔结构，其特征在于，所述发光层、所述电子层和/或所述空穴层材料相同。
  14. 如权利要求9所述的共振腔结构，其特征在于，所述发光层、所述电子层和/或所述空穴层采用Alq、Baq、DPVBi至少一种制成。
  15. 如权利要求9所述的共振腔结构，其特征在于，所述电子层材料为荧光染料化合物。
  16. 如权利要求15所述的共振腔结构，其特征在于，所述电子层采用Alq、 Znq、Gaq、Bebq、Balq、DVPBi、ZnSPB、PBD、OXD、BBOT至少一种制成。
  17. 如权利要求9所述的共振腔结构，其特征在于，所述阴极层材料为低功函数的金属或合金。
  18. 如权利要求17所述的共振腔结构，其特征在于，所述阴极层由Al、Mg、Ag、Mg-Ag至少一种制成。
  19. 一种OLED显示面板，其特征在于，包括：
    TFT基板；和
    多个形成于所述TFT基板上且呈阵列排布的像素，每个所述像素包括如权利要求1-18任意一项所述的共振腔结构。
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