WO2019114519A1 - 一种功率合成分配装置 - Google Patents

一种功率合成分配装置 Download PDF

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Publication number
WO2019114519A1
WO2019114519A1 PCT/CN2018/117026 CN2018117026W WO2019114519A1 WO 2019114519 A1 WO2019114519 A1 WO 2019114519A1 CN 2018117026 W CN2018117026 W CN 2018117026W WO 2019114519 A1 WO2019114519 A1 WO 2019114519A1
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WIPO (PCT)
Prior art keywords
joint
base
cavity
power
port
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PCT/CN2018/117026
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English (en)
French (fr)
Inventor
姚顺奇
刘毅
刘江涛
刘兴现
谢路平
朱海溶
Original Assignee
京信通信系统（中国）有限公司
京信通信系统（广州）有限公司
京信通信技术(广州)有限公司
天津京信通信系统有限公司
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Application filed by 京信通信系统（中国）有限公司, 京信通信系统（广州）有限公司, 京信通信技术(广州)有限公司, 天津京信通信系统有限公司 filed Critical 京信通信系统（中国）有限公司
Publication of WO2019114519A1 publication Critical patent/WO2019114519A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • H01P5/181—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being hollow waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/19—Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type

Definitions

  • the present application relates to the field of communications technologies, and in particular, to a power combining and distributing device.
  • the application of power amplifiers is more and more extensive, but limited by the process and technology, the single-tube output power of power amplifiers is limited, especially in the high-frequency power applications.
  • a power synthesis distribution device In order to meet the demand for the output of high frequency and high power signals, a power synthesis distribution device must be used.
  • the embodiment of the present application provides a power synthesis distribution device for improving power capacity and synthesis efficiency of a power synthesis distribution device.
  • the embodiment of the present application provides a power synthesis distribution device, including:
  • N is a positive integer greater than one
  • the first cavity is provided with a first port for outputting a composite signal or inputting a signal to be decomposed;
  • the second cavity is provided with N second ports, and each second port of the N second ports is used for inputting a signal to be synthesized or outputting a decomposition signal;
  • the center conductor includes a first joint and a first base, the first joint is located in the first port, and the first base is fixed on an inner wall of the second cavity shell;
  • the branch conductor includes a second joint and a second base, the second joint is located in the second port, and the second base is fixed on an inner wall of the first cavity shell.
  • the outer wall of the first chamber shell and/or the second chamber shell is provided with a heat dissipating device.
  • the heat dissipating device is a uniformly distributed fin-shaped or cylindrical metal structure.
  • the first port is located at a center of the first cavity, and the N second ports are evenly distributed on concentric circles centered on a center of the second cavity.
  • first joint and the first base are fixed by a screw connection, or the first joint and the first base are fixed by a metal welding connection; and/or
  • the second joint and the second base are fixed by a screw connection, or the second joint and the second base are fixed by a metal welding connection.
  • first joint or the second joint is made of beryllium copper or phosphor bronze, and the first base or the second base is made of brass or aluminum alloy.
  • the outer shape of the first base and/or the second base is the same as the overall shape of the first cylinder, the first circular table, the second cylinder, and the third cylinder which are disposed in a stack;
  • the diameter of the first cylinder is equal to the diameter of the bottom of the first truncated cone, and the diameter of the second cylinder is equal to the diameter of the top of the first truncated cone;
  • the diameter of the first cylinder is larger than the diameter of the second cylinder; the diameter of the second cylinder is larger than the diameter of the third cylinder; the head of the third cylinder is opposite to the head of the first joint or The head of the second joint is matched.
  • the first connector or the second connector adopts an interface structure of a radio frequency coaxial connector.
  • an insulating ring is disposed between the first connector and the first port, or
  • An insulating ring is disposed between the second joint and the second port.
  • the first cavity shell is engaged with the second cavity shell, and the clamping portion seals the cavity by a conductive adhesive.
  • a power synthesis distribution device which adopts a first cavity shell, a second cavity shell, a center conductor, and a branch conductor to form a waveguide cavity.
  • the central conductor and the branch conductor are located between the first cavity and the second cavity to form a radial waveguide structure, which can realize multi-port primary power synthesis and improve the synthesis efficiency.
  • the central conductor and the branch conductor are in contact with the inner wall of the power synthesis distribution device, thereby achieving good heat dissipation of the entire device, thereby achieving a substantial increase in capacity and synthesis efficiency of the power synthesis distribution device.
  • FIG. 1 is a schematic structural diagram of a radial waveguide power synthesis distribution device according to an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a power combining and distributing device according to an embodiment of the present application
  • FIG. 3 is a schematic structural diagram of a power combining and distributing device according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a power combining and distributing device according to an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a power combining and distributing device according to an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a center conductor according to an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a center conductor according to an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a power combining and distributing device according to an embodiment of the present disclosure.
  • FIG. 9 is a test result diagram of a power combining and distributing device according to an embodiment of the present application.
  • FIG. 10 is a diagram of test results of a power combining and distributing device according to an embodiment of the present application.
  • the radial waveguide synthesizing device is a synthesizing device based on the space synthesis technology of the waveguide, and can realize the one-time synthesis of the output power of a plurality of modules, and has the characteristics of high synthesis efficiency, wide working frequency range, good amplitude and phase consistency, and small insertion loss. It makes up for the shortcomings of other power synthesis technologies. At the same time, it can realize the use of other frequency bands by adjusting the size of the device. It can be used in microwave, millimeter wave and higher sub-millimeter wave bands, effectively solving the problem. The problem of high power output is achieved in the higher frequency band, especially in the high-frequency power synthesis and distribution in a small size, and the synthesis efficiency is high, which is suitable for high-power synthesis and distribution.
  • FIG. 1 is a schematic structural view of a radial waveguide power synthesis distribution device.
  • the radial waveguide power synthesis distribution device consists of the cavity of the cylindrical radial waveguide, the center conductor 101 and a plurality of branch conductors 102-105.
  • the center conductor 101 and the branch conductors 102-105 are connected to a coaxial transmission line and extend into the interior of the cavity.
  • the disc is loaded at the top end of the center conductor 101 and the branch conductors 102-105 as needed for interface matching.
  • the center conductor 101, the top end of the branch conductors 102-105 has a disk for matching the frequency at which the center conductor 101 is loaded and the frequency at which the branch conductors 102-105 are loaded.
  • the radial waveguide power synthesis distribution device can be applied to different frequency bands.
  • the input power of the radial waveguide power synthesis distribution device is fed to the interior of the cavity by branch conductors 102-105, and the combined power is output by a coaxial connector that is coupled to the center conductor 101.
  • Each of the branch conductors 102-105 has the same shape and size.
  • the electromagnetic field excited by the field-symmetric TEM waves at the branch conductors 102-105 is also the same.
  • the same electric field distribution at each branch conductor of the symmetrically distributed branch conductors 102-105 ensures that the energy coupling of each branch conductor from the waveguide is equal, thereby achieving equal power distribution of the branch conductors 102-105, and the amplitude and phase can be kept better. Consistency.
  • Embodiments of the present application provide a power synthesis distribution device to improve power capacity and synthesis efficiency of a power amplification synthesis device.
  • FIG. 2 is a schematic structural diagram of a power combining and distributing device, and the device includes:
  • the first chamber casing 201 and the second chamber casing 202 are sealed to form a cavity, a center conductor 101 and N branch conductors 102-105 located within the cavity; in this embodiment, the N is 4.
  • the first cavity housing 201 is provided with a first port 211 for outputting a composite signal or inputting a signal to be decomposed;
  • the second cavity housing 202 is provided with four second ports 212-215, and each of the four second ports is used for inputting a signal to be synthesized or outputting a decomposition signal;
  • the central conductor 101 includes a first joint 221 and a first base 231.
  • the first joint 221 is located in the first port 211, and the first base 231 is fixed on the inner wall of the second cavity 202.
  • the branch conductor 102, the second joint 222 and the second base 232, the second joint 222 is located in the second port 212, and the second base 232 is fixed on the inner wall of the first cavity shell 201.
  • the branch conductor 103, the second joint 223 and the second base 233, the second joint 223 is located in the second port 213, and the second base 223 is fixed to the inner wall of the first cavity shell 201.
  • the branch conductor 104, the second joint 224 and the second base 234 are disposed in the second port 214, and the second base 234 is fixed to the inner wall of the first cavity 201.
  • the branch conductor 105, the second joint 225 and the second base 235, the second joint 225 is located in the second port 215, and the second base 225 is fixed to the inner wall of the first cavity shell 201.
  • the power synthesis distribution device can also be used as a power distribution device.
  • the four second ports 212-215 are fed as inputs to the cavity by the branch conductors 102-105 and superimposed at the center conductor 101 and output by the first port 211 as an output port.
  • the first port 211 serves as an input for energy being fed into the cavity by the center conductor 101 and decomposed at the four second ports 212-215 and output by the second port 212-215 as an output port.
  • the power synthesis distribution device can be applied to different frequency bands by changing the sizes of the first cavity 201, the second cavity 202, the center conductor 101, and the branch conductors 102-105.
  • the first cavity shell 301 and the second cavity shell 302 have the same structure, and the first cavity shell 301 and the second cavity shell 302 are sealed to form the cylindrical cavity.
  • the first cavity 301 is provided with a first port 211 for outputting a composite signal or inputting a signal to be decomposed;
  • the second cavity 302 is provided with four second ports 212-215, the four second ports Each of the second ports is used to input a signal to be synthesized or an output decomposition signal.
  • the number of the second ports in the embodiments of the present application may be adjusted according to actual applications to meet power synthesis of a larger power level.
  • the first port 211 is located at the center of the first cavity 301, and the four second ports 212-215 are evenly distributed on concentric circles centered on the center of the second cavity 302. Therefore, the power synthesis distribution device exhibits an axisymmetric structure, thereby ensuring equal power distribution of the branch conductors, and the amplitude and phase of the signals in the power synthesis distribution device can maintain good consistency.
  • FIG. 4 is a schematic structural view of a power combining and distributing device.
  • the first cavity shell 201 and the second cavity shell 202 are fixed by screws 401.
  • the first cavity shell 201 and the second cavity shell 202 are engaged.
  • a recess 402 of the first cavity shell 201 is disposed at a joint of the first cavity shell 201 and the second cavity shell 202 at the recess 402
  • the cavity formed by the first cavity shell 201 and the second cavity shell 202 is sealed by a conductive paste to form a good conductive sealing cavity.
  • the conductive adhesive of the depressed portion 402 is compressed by the force to form a good conductive connection, thereby ensuring the continuity of the current in the inner wall of the cavity, thereby ensuring the performance of the power synthesis distribution device and preventing signal leakage.
  • the conductive paste may use 3023 nickel carbon conductive paste
  • the thickness of the depressed portion may be 0.55 mm
  • the thickness of the 3023 nickel carbon conductive paste is 0.8 mm.
  • a possible implementation manner is to silver plate all surfaces of the inner wall surface, the center conductor and the branch conductor of the power synthesis distribution device, and the silver plating thickness is greater than the skin depth of the working frequency band to improve the performance of the power synthesis distribution device. , reduce the insertion loss.
  • FIG. 2 is a schematic structural diagram of a power combining and distributing device, and the structure of the power combining and distributing device is a symmetrical structure.
  • the four branch conductors are completely identical in structure and size, and are evenly distributed on concentric circles centered on the center of the first cavity shell 201, and inserted into the four second ports.
  • the branch conductor 102 is inserted into the second port 212
  • the branch conductor 105 is inserted into the second port 215
  • the center conductor 101 is located at the center of the second cavity casing 202 and inserted into the first port 211.
  • the first connector of the center conductor or the second connector of the four branch conductors may use the same RF coaxial connector to reduce processing costs.
  • the first connector and the second connector may be standard SMA, N or 7/16 RF coaxial connectors, and different standard RF coaxial connectors are selected according to the application to achieve better generalization. Sex.
  • the center conductor 101 can be fixed to the inner wall of the second cavity shell 202 by screws 501, and the four branch conductors can be fixed to the inner wall of the first cavity shell 201 by screwing.
  • the branch conductors 102, 105 are fixed to the inner wall of the first chamber casing 201 by screws 502, 505. Since the metal conductor has good thermal conductivity with respect to air, the heat generated by the power synthesis distribution device in the application can be directly transmitted to the first cavity shell 201 or the second directly through the center conductor 101 or the four branch conductors. On the chamber casing 202, heat can be quickly exchanged into the external environment of the power synthesis distribution device.
  • the power synthesis distribution device provided greatly improves the power capacity of the radial waveguide power synthesis distribution device in the prior art.
  • the first port 211 and the second port 212, 215 are provided with internal threads for connecting the connecting means 511, 512, 515 for connecting the first joint 211 or the second joint 212, 215.
  • the connecting means 511, 512, 515 can be mounted to the first port 211 or the second port 212, 215 of the first chamber casing 201 or the second chamber casing 202 by a wrench.
  • Insulation rings 521, 522, 525 are disposed between the first joint 211 or the second joints 212, 215 and the connecting devices 511, 512, 515.
  • the first joint 221 or the second joints 212, 215 are placed at the center of the insulating rings 521, 522, 525, and the connecting means 511, 512, 515 are located at the periphery of the insulating rings 521, 522, 525.
  • the insulating rings 521, 522, and 525 may be Teflon materials to constitute a characteristic impedance of 50 ⁇ .
  • FIG. 5 is a cross-sectional view, the other two second ports of the four second ports except the second port 212, 215 can not be shown in FIG. 5, and the structure is the same as the second port 212, 215, here is not Let me repeat.
  • the first base 231 of the center conductor 101 or the second base of the four branch conductors adopts a tapered gradation structure, for example, the second bases 232, 235 of the branch conductors 102, 105 adopt a tapered gradation structure.
  • a relative bandwidth of not less than 40% can be achieved.
  • the tapered tapered structure may be a structure as shown in FIG. 6, and FIG. 6 is a schematic structural view of a center conductor.
  • the outer shape of the first base 231 is the same as the overall shape of the first cylinder 601, the first circular table 602, the second cylinder 611, and the third cylinder 603 which are stacked.
  • the diameter of the first cylinder 601 is equal to the diameter of the bottom of the first circular table 611
  • the diameter of the second cylinder 602 is equal to the diameter of the top of the first circular table 611.
  • the diameter of the first cylinder 601 is larger than the diameter of the second cylinder 602, the diameter of the second cylinder 602 is larger than the diameter of the third cylinder 603, and the head of the third cylinder 603 is matched with the head of the first joint 221.
  • the structure of the branch conductor may be the same as that of the center conductor, and will not be described herein.
  • the center conductor or the tip end portion of the branch conductor is subjected to a 45° chamfering or reverse arc angle treatment to reduce the risk of excessive concentration of the tip field strength and the risk of sparking caused by air breakdown.
  • the peak power capacity of the power synthesis distribution device is increased.
  • the first connector of the center conductor and the second connector of the four branch conductors need to be the same material as the RF coaxial connector Processing, that is, beryllium copper or phosphor bronze material to improve the reliability and service life of the connecting device.
  • the center conductor and the branch conductor are not suitable for the overall processing of beryllium copper or phosphor bronze.
  • the density of beryllium copper or phosphor bronze is relatively large, and the processed device is relatively heavy. If the central conductor and the branch conductor are integrally processed, the center conductor or the branch conductor is too bulky, which is disadvantageous for the weight reduction of the device. Therefore, in the embodiment of the present application, the first joint of the center conductor and the second joint and the second joint of the first base and the branch conductor are processed by using different materials.
  • the center conductor 101 is taken as an example.
  • the first joint 221 of the center conductor 101 is made of beryllium copper or phosphor bronze, and the first base 231 is made of brass. Material.
  • the first joint 221 and the first base 231 are welded together by metal welding.
  • the portion of the head of the third cylinder 603 that matches the head of the first joint 221 is welded together by metal welding.
  • the metal weld can be silver or tin.
  • the first joint and the first base of the center conductor and the second joint and the second base of the branch conductor are more suitable to be welded. Due to the high frequency of the device, the required device size is small, the processing process is required to be higher, and the soldering is easier to ensure performance.
  • FIG. 7 is a schematic structural view of a center conductor 101.
  • the first joint 221 of the center conductor 101 is made of beryllium copper or phosphor bronze, and the first base 231 is made of brass or aluminum alloy.
  • the first joint 221 and the first base 231 are fastened together by screws 701.
  • the first joint and the first base of the center conductor and the second joint and the second base of the branch conductor may be screwed. Due to the lower frequency of the device and the larger size of the device required, the screw-on connection can reduce the processing cost while ensuring the performance of the device.
  • the branch conductor can be processed in the same manner as the center conductor, and will not be described here.
  • FIG. 8 is a schematic structural diagram of a power combining and distributing device. Since the center conductor in the power combining and distributing device is the most heat-generating as the combining end, the embodiment of FIG. 8 is provided with a heat dissipating device 801 on the outer wall of the second cavity shell 202. In this embodiment, heat dissipation is provided. Device 801 can be a fin-like metal structure that is evenly distributed over the outer wall of second cavity shell 202. In order to improve the heat dissipation performance, thereby increasing the average power capacity.
  • the heat sink may be cylindrical or other structure that is advantageous for increasing the heat dissipation area.
  • a heat dissipating device may be disposed on the outer wall of the first cavity shell 201, and the heat dissipating device may be a fin-shaped metal structure uniformly distributed on the outer wall of the first cavity shell 201 to improve heat dissipation performance, thereby improving the average thereof. Power Capacity.
  • the heat sink may be cylindrical or other structure that is advantageous for increasing the heat dissipation area.
  • the center conductor of the power combining and distributing device and the branch conductor are fixed to the inner wall of the first cavity shell 201 or the second cavity shell 202, the heat generated by the combined path loss can be transmitted to the first cavity shell 201 in time. Or the heat dissipating teeth of the outer wall of the second cavity shell 202, so that heat is quickly transferred to the external environment.
  • FIG. 9 is a diagram showing test results of a power combining and distributing device provided by an embodiment of the present application. Actual tests were carried out on three frequency points of 2.4 GHz, 2.45 GHz and 2.5 GHz. The output port return loss of the power synthesis distribution device is lower than -20 dB, and the amplitude of the output signal of the power synthesis distribution device has a good consistency.
  • FIG. 10 is a diagram showing test results of a power combining and distributing device provided by an embodiment of the present application.
  • the phase P(S(2,1), S(3,1), S(4,1)S() of the output signal of the power synthesis distribution device at three frequency points of 2.4 GHz, 2.45 GHz, and 2.5 GHz ( 5,1)) has good consistency and achieves an average power capacity of not less than 2 KW in the S-band.
  • the power synthesis distribution device has good heat dissipation, and the surface temperature of the first cavity shell and the second cavity shell is only slightly higher than the ambient temperature, and the performance is stable and reliable.
  • the common power synthesis adopts a step-by-step synthesis method, and its synthesis efficiency is low.
  • the embodiment of the present application provides a power synthesizing and distributing device, which adopts a radial waveguide structure to realize spatial power synthesis. Since multiple input ports perform power synthesis at one time, the synthesis efficiency is high.
  • the power synthesis distribution device has good phase and amplitude uniformity and small insertion loss; the input port of the power synthesis distribution device is a scalable multiple input to meet a larger power capacity application requirement; the power synthesis distribution
  • the structure of the device is symmetrical, the components are few, the assembly is simple, the implementation is easy, and the performance is stable and reliable.
  • the center conductor or the branch conductor is connected and fixed to the cavity of the power synthesis distribution device, ensuring good heat dissipation, realizing high power synthesis, and simultaneously satisfying the high efficiency of signal synthesis.

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Abstract

本申请实施例涉及通信领域，尤其涉及一种功率合成分配装置，包括：第一腔壳和第二腔壳密封形成的腔体、位于所述腔体内的中心导体和N个分支导体；N为大于1的正整数；所述第一腔壳设置有第一端口，所述第一端口用于输出合成信号或输入待分解信号；所述第二腔壳设置有N个第二端口，所述N个第二端口的每个第二端口用于输入待合成信号或输出分解信号；所述中心导体，包括第一接头和第一底座，所述第一接头位于所述第一端口内，所述第一底座固定于所述第二腔壳的内壁上；所述分支导体，包括第二接头和第二底座，所述第二接头位于所述第二端口内，所述第二底座固定于所述第一腔壳的内壁上。

Description

一种功率合成分配装置
本申请要求在2017年12月11日提交中华人民共和国知识产权局、申请号为201711308468.7，发明名称为“一种功率合成分配装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及通信技术领域，尤其涉及一种功率合成分配装置。
背景技术
在雷达、通信系统中，功率放大器的应用越来越广，但受工艺、技术等限制，功率放大器的单管输出功率有限，尤其是在高频段的功率应用中其缺点更加明显。为满足高频大功率信号的输出的需求，必须使用功率合成分配装置。
传统的二进制功率分配装置，如威尔金森功分装置、分支线耦合装置，仅应用于小功率合成，而且逐级合成，合成效率低，无法满足功率放大装置在雷达、通信系统中大功率大容量的需求；而满足大功率应用的波导T型结功率合成分配装置，也需要逐级合成，合成效率低，而且尺寸较大，无法满足系统小型化需求。
综上所述，目前亟需一种功率合成分配装置，以解决如何提高功率放大合成装置的功率容量和合成效率的问题。
发明内容
本申请实施例提供一种功率合成分配装置，用于提高功率合成分配装置的功率容量和合成效率。
本申请实施例提供一种功率合成分配装置，包括：
第一腔壳和第二腔壳密封形成的腔体、位于所述腔体内的中心导体和N个分支导体；N为大于1的正整数；
所述第一腔壳设置有第一端口，所述第一端口用于输出合成信号或输入待分解信号；
所述第二腔壳设置有N个第二端口，所述N个第二端口的每个第二端口用于输入待合成信号或输出分解信号；
所述中心导体，包括第一接头和第一底座，所述第一接头位于所述第一端口内，所述第一底座固定于所述第二腔壳的内壁上；
所述分支导体，包括第二接头和第二底座，所述第二接头位于所述第二端口内，所述第二底座固定于所述第一腔壳的内壁上。
一种可能的实现方式，所述第一腔壳和/或所述第二腔壳的外壁设置有散热装置。
一种可能的实现方式，所述散热装置为均匀分布的鳍片状或圆柱状金属结构。
一种可能的实现方式，所述第一端口位于所述第一腔壳的圆心处，所述N个第二端口均匀分布在以所述第二腔壳的圆心为圆心的同心圆上。
一种可能的实现方式，所述第一接头和所述第一底座通过螺钉连接固定，或者所述第一接头和所述第一底座的通过金属焊接连接固定；和/或
所述第二接头和所述第二底座通过螺钉连接固定，或者所述第二接头和所述第二底座的通过金属焊接连接固定。
一种可能的实现方式，所述第一接头或所述第二接头为铍铜或磷青铜材质，所述第一底座或所述第二底座为黄铜或铝合金材质。
一种可能的实现方式，所述第一底座和/或所述第二底座的外形与层叠设置的第一圆柱、第一圆台、第二圆柱和第三圆柱的整体外形相同；
所述第一圆柱的直径与所述第一圆台的底部直径相等，所述第二圆柱的直径与所述第一圆台的顶部直径相等；
所述第一圆柱的直径大于所述第二圆柱的直径；所述第二圆柱的直径大于所述第三圆柱的直径；所述第三圆柱的头部与所述第一接头的头部或所述第二接头的头部匹配。
一种可能的实现方式，所述第一接头或所述第二接头采用射频同轴连接器的接口结构。
一种可能的实现方式，所述第一接头与所述第一端口之间设置有绝缘环，或
所述第二接头与所述第二端口之间设置有绝缘环。
一种可能的实现方式，所述第一腔壳与所述第二腔壳卡合，所述卡合处通过导电胶密封所述腔体。
本申请实施例中，提供一种功率合成分配装置，采用第一腔壳、第二腔壳、中心导体、分支导体组成波导腔体。中心导体与分支导体位于第一腔壳和第二腔壳之间，形成径向波导结构，该径向波导结构可以实现多端口一次功率合成，提高了合成效率。中心导体与分支导体与功率合成分配装置的腔体内壁接触固定，实现了整个装置的良好散热，进而实现功率合成分配装置的容量和合成效率的大幅度提高。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍。
图1为本申请实施例提供的一种径向波导功率合成分配装置的结构示意图；
图2为本申请实施例提供的一种功率合成分配装置的结构示意图；
图3为本申请实施例提供的一种功率合成分配装置的结构示意图；
图4为本申请实施例提供的一种功率合成分配装置的结构示意图；
图5为本申请实施例提供的一种功率合成分配装置的结构示意图；
图6为本申请实施例提供的一种中心导体的结构示意图；
图7为本申请实施例提供的一种中心导体的结构示意图；
图8为本申请实施例提供的一种功率合成分配装置的结构示意图；
图9为本申请实施例提供的一种功率合成分配装置的测试结果图；
图10为本申请实施例提供的一种功率合成分配装置的测试结果图。
具体实施方式
下面将结合附图对本申请作进一步地详细描述。
径向波导合成装置是基于波导的空间合成技术的合成装置，可实现多个模块输出功率的一次性合成，具有合成效率高、工作频段宽和幅相一致性好、插损小的特点，较好的弥补了其他功率合成技术的不足，同时，它可以通过调节装置尺寸来实现其他频段的使用，使用范围广，工作于微波、毫米波以及更高的亚毫米波频段，有效的解决了在更高频段实现高功率输出的问题，尤其可以在小尺寸下实现高频段的功率合成和分配，合成效率高，适合于大功率合成和分配。
如图1所示，为一种径向波导功率合成分配装置的结构示意图。径向波导功率合成分配装置由圆柱形径向波导的所述腔体、中心导体101和多个分支导体102-105组成。中心导体101和分支导体102-105连接同轴传输线，并 延伸到所述腔体内部。根据接口匹配的需要，在中心导体101和分支导体102-105顶端加载圆盘。例如，中心导体101，分支导体102-105的顶端都有圆盘，用于中心导体101加载的频率和分支导体102-105加载的频率的匹配。根据分支导体102-105、中心导体101、和所述腔体的尺寸的不同，可以将径向波导功率合成分配装置应用于不同的频段。
径向波导功率合成分配装置的输入功率由分支导体102-105馈送至所述腔体内部，合成功率由与中心导体101连接的同轴接头输出。各分支导体102-105的形状、尺寸相同。
由于径向波导合成装置内的分支导体分布对称，因而场分布对称的TEM波在分支导体102-105处激励的电磁场也相同。对称分布的分支导体102-105每个分支导体处相同的电场分布确保每个分支导体从波导中耦合的能量相等，从而实现分支导体102-105的等功率分配，其幅度和相位可以保持较好的一致性。
但是，由于径向波导功率合成分配装置的内部中心导体101和分支导体102-105悬空，发热通常会停留在所述腔体的空气中，极难传导至环境中，导致径向波导功率合成分配装置的功率容量受到很大的限制。
本申请实施例提供一种功率合成分配装置，以提高功率放大合成装置的功率容量和合成效率。
为描述方便，本申请实施例以4路功率合成分配装置为例进行描述。其他多路功率合成分配装置，可参考该实施例，在此不再赘述。
如图2所示，为一种功率合成分配装置结构示意图，所述装置包括：
第一腔壳201和第二腔壳202密封形成的腔体、位于所述腔体内的中心导体101和N个分支导体102-105；在该实施例中，所述N为4。
第一腔壳201设置有第一端口211，第一端口211用于输出合成信号或输入待分解信号；
第二腔壳202设置有4个第二端口212-215，所述4个第二端口的每个第二端口用于输入待合成信号或输出分解信号；
中心导体101，包括第一接头221和第一底座231，第一接头221位于第一端口211内，第一底座231固定于第二腔壳202的内壁上；
分支导体102，第二接头222和第二底座232，第二接头222位于所述第二端口212内，第二底座232固定于第一腔壳201的内壁上。
分支导体103，第二接头223和第二底座233，第二接头223位于所述第二端口213内，第二底座223固定于第一腔壳201的内壁上。
分支导体104，第二接头224和第二底座234，第二接头224位于所述第二端口214内，第二底座234固定于第一腔壳201的内壁上。
分支导体105，第二接头225和第二底座235，第二接头225位于所述第二端口215内，第二底座225固定于第一腔壳201的内壁上。
所述功率合成分配装置也可作为功率分配装置使用。作为合成装置使用时，四个第二端口212-215作为输入端由分支导体102-105将能量馈入至腔体，并在中心导体101处叠加，并由第一端口211作为输出端口输出。作为功率分配装置使用，与以上相反。第一端口211作为输入端，由中心导体101将能量馈入至腔体，并在四个第二端口212-215处分解，并由第二端口212-215作为输出端口输出。
在具体实施过程中，可以通过改变第一腔壳201、第二腔壳202、中心导体101、分支导体102-105的尺寸，以实现所述功率合成分配装置应用于不同的频段。
一种可能的实现方式，如图3所示，第一腔壳301和第二腔壳302的结构相同，第一腔壳301和第二腔壳302密封形成圆柱形的所述腔体。第一腔壳301设置有第一端口211，第一端口211用于输出合成信号或输入待分解信号；第二腔壳302设置有4个第二端口212-215，所述4个第二端口的每个第二端口用于输入待合成信号或输出分解信号。
本申请实施例的所述第二端口的数量可根据实际应用进行调整，以满足更大功率等级的功率合成。
第一端口211位于第一腔壳301的圆心处，4个第二端口212-215均匀分布在以所述第二腔壳302的圆心为圆心的同心圆上。因此，所述功率合成分配装置表现为轴对称结构，进而保证了分支导体的等功率分配，并且所述功率合成分配装置中的信号的幅度和相位可以保持较好的一致性。
结合图2，图4为一种功率合成分配装置的结构示意图，如图4所示，第一腔壳201和第二腔壳202通过螺丝401固定。第一腔壳201和第二腔壳202卡合，具体的，在第一腔壳201和第二腔壳202的接缝处设置有第一腔壳201的凹陷部402，在凹陷部402处通过导电胶对第一腔壳201和第二腔壳202形成的腔体进行密封，形成良好的导电密封腔体。采用螺钉401固定后，凹陷部402的导电胶受到力的作用而压缩，形成良好的导电连接，保证电流在腔体内壁的连续性，从而保证了功率合成分配装置的性能，并防止信号的泄漏。例如，所述导电胶可以使用3023镍碳导电胶，凹陷部的厚度可以为0.55毫米，3023镍碳导电胶的厚度为0.8毫米。
一种可能的实现方式，将所述功率合成分配装置的腔体内壁表面、中心导体、分支导体的所有表面镀银，镀银厚度大于工作频段的趋肤深度，以提高功率合成分配装置的性能，降低插损。
结合图2，如图5所示，为一种功率合成分配装置的结构示意图，所述功率合成分配装置的结构为对称结构。所述4个分支导体的结构和尺寸完全一致，并均匀分布在以第一腔壳201的圆心为圆心的同心圆上，插入4个所述第二端口中。例如，分支导体102插入第二端口212中，分支导体105插入第二端口215中，中心导体101位于第二腔壳202的圆心处，插入第一端口211中。
可选的，所述中心导体的第一接头或所述4个分支导体的第二接头可以采用相同的射频同轴连接器，以降低加工成本。具体的，所述第一接头、所述第二接头可以采用标准的SMA、N或7/16射频同轴连接器，根据应用场合选择不同标准的射频同轴连接器，以实现更好的通用性。
一种可能的实现方式，中心导体101可以通过螺钉501固定于第二腔壳202的内壁上，所述4个分支导体可以通过螺钉固定的方式固定于第一腔壳201的内壁上。例如，分支导体102、105通过螺钉502、505固定于第一腔壳201的内壁上。由于金属导体相对于空气具有良好的导热性，故所述功率合成分配装置在应用中产生的热量，能够直接通过中心导体101或所述4个分支导体直接传导至第一腔壳201或第二腔壳202上，进而可以将热量快速的交换至所述功率合成分配装置的外部环境中。
通过良好的散热，本申请实施例中，提供的功率合成分配装置极大的提高了现有技术中所述径向波导功率合成分配装置的功率容量。
第一端口211和第二端口212、215设置有内螺纹，用于连接连接装置511、512、515，连接装置511、512、515用于连接第一接头211或第二接头212、215。连接装置511、512、515可以通过扳手安装至第一腔壳201或第二腔壳202对应的第一端口211或第二端口212、215上。
所述第一接头211或所述第二接头212、215与连接装置511、512、515之间设置有绝缘环521、522、525。绝缘环521、522、525的中心放置第一接头221或第二接头212、215，连接装置511、512、515位于绝缘环521、522、525的外围。可选的，绝缘环521、522、525可以为特氟龙材质，从而构成50Ω的特征阻抗。
由于图5为剖面图，所述4个第二端口中除第二端口212、215的另外2个第二端口不能显示在图5中，其结构与第二端口212、215相同，在此不再赘述。
中心导体101的第一底座231、或所述4个分支导体中的所述第二底座均采用锥形渐变结构，例如，分支导体102、105的第二底座232、235采用锥形渐变结构，可以实现不小于40％的相对带宽。在所述分支导体的数量不为4个时，相对带宽会随之改变。在具体实施过程中，以中心导体为例，所述锥形渐变结构可以为如图6所示的结构，图6为一种中心导体的结构示意图。
第一底座231的外形与层叠设置的第一圆柱601、第一圆台602、第二圆柱611和第三圆柱603的整体外形相同。第一圆柱601的直径与第一圆台611的底部直径相等，第二圆柱602的直径与第一圆台611的顶部直径相等。第一圆柱601的直径大于第二圆柱602的直径，第二圆柱602的直径大于第三圆柱603的直径，第三圆柱603的头部与第一接头221的头部匹配。
分支导体的结构可以与中心导体相同，在此不再赘述。
为避免尖端放电而出现击穿现象，需要控制合成腔体表面和内部的分支导体、中心导体的加工的表面粗糙度，并对中心导体、分支导体的边缘进行倒角处理。
一种可能的实现方式，所述中心导体或所述分支导体的尖端部分做45° 倒角或倒圆弧角处理，以降低尖端场强过于集中的风险和空气击穿造成的打火风险，提高所述功率合成分配装置的峰值功率容量。
对于连接射频同轴连接器的第一接头或第二接头，所述中心导体的所述第一接头、所述4个分支导体的所述第二接头需要采用与射频同轴连接装置相同的材质加工，即铍铜或磷青铜材质，以提高连接装置可靠性及使用寿命。但是，受加工工艺、成本、原材料等因素的限制，所述中心导体及所述分支导体不适合整体采用铍铜或磷青铜加工的方式。另外，铍铜或磷青铜的密度较大，加工的装置件较重，若对中心导体和分支导体采用整体加工的方式，将导致中心导体或分支导体过于笨重，不利于装置件的轻量化。因此，本申请实施例中，所述中心导体的第一接头与第一底座和所述分支导体中的第二接头与第二接头采用不同的材质进行加工。
一种可能的实现方式，以中心导体101为例，如图6所示，一种可能的实现方式，中心导体101的第一接头221采用铍铜或磷青铜材质，第一底座231采用黄铜材质。第一接头221和第一底座231通过金属焊接将两部分焊接在一起。具体的，第三圆柱603的头部与第一接头221的头部匹配的部位通过金属焊接将两部分焊接在一起。所述金属焊接可以为银焊或锡焊。
当所述功率合成分配装置处于高频段工作时，所述中心导体的第一接头和第一底座与所述分支导体的第二接头和第二底座更适合采用焊接的连接方式。由于所述装置的频率较高，所需的装置尺寸小，要求加工工艺更高，焊接更容易保证性能。
一种可能的实现方式，如图7所示，为一种中心导体101的结构示意图。中心导体101的第一接头221采用铍铜或磷青铜材质，第一底座231采用黄铜或铝合金材质。第一接头221和第一底座231通过螺钉701紧固在一起。
当所述功率合成分配装置处于较低频段工作时，所述中心导体的第一接头和第一底座与所述分支导体的第二接头和第二底座可采用螺钉连接方式。由于所述装置的频率较低，所需的装置尺寸较大，螺钉固定的连接方式可以在保证装置的性能的前提下，降低加工成本。
分支导体的加工方式可以与中心导体相同，在此不再赘述。
如图8所示，为一种功率合成分配装置的结构示意图。由于所述功率合成分配装置中的所述中心导体作为合路端发热最严重，因此，图8的实施例为在第二腔壳202的外壁上设置散热装置801，在该实施例中，散热装置801可以为均匀分布在第二腔壳202的外壁的鳍片状金属结构。以提高散热性能，进而提高其平均功率容量。
可选的，所述散热装置可以为圆柱状或者其它利于增大散热面积的结构。
可选的，第一腔壳201的外壁上也可以设置散热装置，所述散热装置可以为均匀分布在第一腔壳201的外壁的鳍片状金属结构，以提高散热性能，进而提高其平均功率容量。
可选的，所述散热装置可以为圆柱状或者其它利于增大散热面积的结构。
由于所述功率合成分配装置的所述中心导体、所述分支导体与第一腔壳201或第二腔壳202的内壁固定，因此，合路损耗产生的热能够及时传导至第一腔壳201或第二腔壳202外壁的散热齿上，从而很快的将热量传导至外部环境中。
如图9所示，为本申请实施例提供的一种功率合成分配装置的测试结果图。对2.4GHz、2.45GHz、2.5GHz三个频点进行了实际测试。所述功率合成分配装置的输出端口回波损耗低于-20dB，所述功率合成分配装置的输出信号的幅度具有较好一致性。如图10所示，为本申请实施例提供的一种功率合成 分配装置的测试结果图。在2.4GHz、2.45GHz、2.5GHz三个频点下，所述功率合成分配装置的输出信号的相位P(S(2,1)，S(3,1)，S(4,1)S(5,1))具有较好一致性，实现了在S波段具有不低于2KW的平均功率容量。所述功率合成分配装置具有良好散热，所述第一腔壳和所述第二腔壳的表面温度仅稍高于环境温度，性能稳定可靠。
常见的功率合成采用逐级合成的方式，其合成效率低。为解决目前半导体功率合成存在的合成装置功率容量小的问题，本申请实施例提供一种功率合成分配装置，采用径向波导结构，实现空间的功率合成。由于多个输入端口一次性进行功率合成，因此合成效率高。所述功率合成分配装置具有良好的相位、幅度一致性，插损小；所述功率合成分配装置的输入端口为可扩展的多路输入，以满足更大功率容量应用需求；所述功率合成分配装置的结构对称，组件少，装配简单，容易实现，性能稳定可靠。中心导体或分支导体与功率合成分配装置的腔体连接固定，保证了良好散热，实现了大功率合成，并同时满足信号合成的高效性。
尽管已描述了本申请的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本申请范围的所有变更和修改。
显然，本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样，倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (10)

  1. 一种功率合成分配装置，其特征在于，包括：
    第一腔壳和第二腔壳密封形成的腔体、位于所述腔体内的中心导体和N个分支导体；N为大于1的正整数；
    所述第一腔壳设置有第一端口，所述第一端口用于输出合成信号或输入待分解信号；
    所述第二腔壳设置有N个第二端口，所述N个第二端口的每个第二端口用于输入待合成信号或输出分解信号；
    所述中心导体，包括第一接头和第一底座，所述第一接头位于所述第一端口内，所述第一底座固定于所述第二腔壳的内壁上；
    所述分支导体，包括第二接头和第二底座，所述第二接头位于所述第二端口内，所述第二底座固定于所述第一腔壳的内壁上。
  2. 如权利要求1所述的功率合成分配装置，其特征在于，所述第一腔壳和/或所述第二腔壳的外壁设置有散热装置。
  3. 如权利要求2所述的功率合成分配装置，其特征在于，所述散热装置为均匀分布的鳍片状或圆柱状金属结构。
  4. 如权利要求1-3任一项所述的功率合成分配装置，其特征在于，所述第一端口位于所述第一腔壳的圆心处，所述N个第二端口均匀分布在以所述第二腔壳的圆心为圆心的同心圆上。
  5. 如权利要求1-3任一项所述的功率合成分配装置，其特征在于，所述第一接头和所述第一底座通过螺钉连接固定，或者所述第一接头和所述第一底座的通过金属焊接连接固定；和/或
    所述第二接头和所述第二底座通过螺钉连接固定，或者所述第二接头和所述第二底座的通过金属焊接连接固定。
  6. 如权利要求5所述的功率合成分配装置，其特征在于，所述第一接头或所述第二接头为铍铜或磷青铜材质，所述第一底座或所述第二底座为黄铜 或铝合金材质。
  7. 如权利要求1-3任一项所述的功率合成分配装置，其特征在于，所述第一底座和/或所述第二底座的外形与层叠设置的第一圆柱、第一圆台、第二圆柱和第三圆柱的整体外形相同；
    所述第一圆柱的直径与所述第一圆台的底部直径相等，所述第二圆柱的直径与所述第一圆台的顶部直径相等；
    所述第一圆柱的直径大于所述第二圆柱的直径；所述第二圆柱的直径大于所述第三圆柱的直径；所述第三圆柱的头部与所述第一接头的头部或所述第二接头的头部匹配。
  8. 如权利要求7所述的功率合成分配装置，其特征在于，所述第一接头或所述第二接头采用射频同轴连接器的接口结构。
  9. 如权利要求7所述的功率合成分配装置，其特征在于，所述第一接头与所述第一端口之间设置有绝缘环，或
    所述第二接头与所述第二端口之间设置有绝缘环。
  10. 如权利要求7所述的功率合成分配装置，其特征在于，所述第一腔壳与所述第二腔壳卡合，所述卡合处通过导电胶密封所述腔体。
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