WO2019114356A1 - Magnetic tunnel junction and manufacturing method therefor - Google Patents

Magnetic tunnel junction and manufacturing method therefor Download PDF

Info

Publication number
WO2019114356A1
WO2019114356A1 PCT/CN2018/106489 CN2018106489W WO2019114356A1 WO 2019114356 A1 WO2019114356 A1 WO 2019114356A1 CN 2018106489 W CN2018106489 W CN 2018106489W WO 2019114356 A1 WO2019114356 A1 WO 2019114356A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
dielectric
magnetic
hole
forming
Prior art date
Application number
PCT/CN2018/106489
Other languages
French (fr)
Chinese (zh)
Inventor
许开东
胡冬冬
车东晨
陈璐
王佳
徐康宁
刘自明
Original Assignee
江苏鲁汶仪器有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 江苏鲁汶仪器有限公司 filed Critical 江苏鲁汶仪器有限公司
Publication of WO2019114356A1 publication Critical patent/WO2019114356A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Definitions

  • the present invention relates to the field of magnetic random access memories, and in particular to a magnetic tunnel junction and a method of fabricating the same.
  • MRAM Magnetic Random Access Memory
  • SRAM static random access memory
  • DRAM dynamic random access memory
  • the magnetic tunnel junction is the core structure of the MRAM, which consists of a fixed layer, a non-magnetic isolation layer, and a free layer.
  • the fixed layer is thicker, the magnetism is stronger, the magnetic moment is not easy to reverse, and the free layer is thinner, the magnetism is weaker, and the magnetic moment is easily reversed.
  • a state of "0" or "1” is output according to a change in parallel and anti-parallel magnetic moment between the free layer and the fixed layer.
  • the free layer is a magnetic film that stores information, using a soft ferromagnetic material, has a relatively low coercive force, a high magnetic permeability, and a high sensitivity to a low magnetic field.
  • the separator is a non-magnetic film having a thickness of only 1 to 2 nm, such as MgO or Al 2 O 3 .
  • the fixed layer is a film in which the magnetic field has a fixed direction in the MRAM cell.
  • the choice of material should have a strong exchange bias with the antiferromagnetic layer so that the magnetic moment of the pinned layer can be effectively pinned in a fixed direction.
  • CoFe, CoFeB and the like are more suitable.
  • the material of the MTJ is a material which is difficult to dry-etch, such as Fe, Co, Mg, etc., it is difficult to form a volatile product, and an etching gas (Cl 2 or the like) cannot be used, which may affect the performance of the MTJ. Therefore, a relatively complicated etching method is required, and the etching process has high difficulty.
  • Patent Document 1 US20090209102
  • Patent Document 2 US8629518
  • Patent Document 3 US8962349
  • Patent Document 4 CN103682084A;
  • Patent Document 5 CN1801390A;
  • Patent Document 6 US7397099
  • Patent Document 7 CN103066199A.
  • the magnetic tunnel junction manufacturing method of the present invention includes the following steps: a first dielectric hole forming step of forming a first passivation dielectric layer on the bottom electrode, and forming a first dielectric hole in the first passivation dielectric layer; a magnetic layer forming step of forming a first magnetic layer in the first dielectric hole such that a top surface of the first magnetic layer and a top surface of the first passivation dielectric layer are in the same plane; a forming step of forming a second passivation dielectric layer on the first magnetic layer, and forming a second dielectric hole in the second passivation dielectric layer; a tunneling insulating layer and a second magnetic layer forming step, Forming a tunneling insulating layer and a second magnetic layer in the second dielectric hole; and a top electrode forming step of forming a top electrode on the second magnetic layer.
  • the first dielectric hole or the second dielectric hole is a steep straight hole.
  • an angle between an edge of the first dielectric hole and a bottom surface is between 90° ⁇ 15°.
  • the angle between the side wall of the second dielectric hole and the bottom surface is between 90° ⁇ 15°.
  • the first dielectric hole has a lithographic aperture diameter of 10 to 200 nm.
  • the lithographic aperture of the second dielectric hole is the same as the diameter of the lithographic aperture of the first dielectric aperture.
  • the first passivation dielectric layer has a thickness of 40 to 50 nm
  • the second passivation dielectric layer has a thickness of 40 to 50 nm
  • the invention also discloses a magnetic tunnel junction, comprising: a bottom electrode; a first passivation dielectric layer formed on the bottom electrode and having a first dielectric hole; a first magnetic layer formed on the first dielectric hole The top surface of the first magnetic layer is in the same plane as the top surface of the first passivation dielectric layer; the second passivation dielectric layer is located on the first magnetic layer and has a second dielectric hole; Tunneling an insulating layer and a second magnetic layer formed in the second dielectric hole; and a top electrode on the second magnetic layer.
  • the angle between the side wall and the bottom surface of the second dielectric hole is between 90° ⁇ 15°.
  • the magnetic tunnel junction manufacturing method of the invention avoids the etching process of the magnetic tunnel junction core layer material (magnetic layer and tunneling insulating layer), and etches the conventional semiconductor material, thereby greatly reducing the manufacturing process, especially the etching process. Difficulty.
  • the magnetic tunnel junction manufacturing method of the present invention makes the edges of the first magnetic layer and the second magnetic layer relatively far apart (the distance is much larger than the tunneling layer thickness), thereby effectively preventing the edges of the first magnetic layer and the second magnetic layer from being effectively prevented. Leakage causes the possibility of device failure.
  • FIG. 1 is a schematic flow chart of a method of manufacturing a magnetic tunnel junction of the present invention
  • FIG. 2 is a schematic view showing the structure of a device after forming a first dielectric layer in the magnetic tunnel junction manufacturing method of the present invention
  • FIG. 3 is a schematic structural view of a device after forming a first dielectric hole in the magnetic tunnel junction manufacturing method of the present invention
  • FIG. 4 is a schematic structural view of a device after forming a first magnetic layer in a method of manufacturing a magnetic tunnel junction according to the present invention
  • FIG. 5 is a schematic structural view of a device after forming a second dielectric hole in the magnetic tunnel junction manufacturing method of the present invention.
  • FIG. 6 is a schematic view showing the structure of a device after forming a tunnel insulating layer and a second magnetic layer in the magnetic tunnel junction manufacturing method of the present invention
  • Fig. 7 is a schematic view showing the structure of a magnetic tunnel junction formed by the magnetic tunnel junction manufacturing method of the present invention.
  • FIG. 1 is a schematic flow chart of a method of manufacturing a magnetic tunnel junction of the present invention.
  • a first passivation dielectric layer 101 is formed on the bottom electrode 100, and in the first passivation dielectric layer.
  • the first dielectric hole 102 is formed in 101, and the resulting device structure is as shown in FIGS. 2 and 3.
  • the material of the bottom electrode 100 may be a conductive material, including a semiconductor doped with a dopant, a metal, a conductive metal nitride, or the like.
  • the semiconductor doped with the dopant may be doped silicon, doped germanium or the like.
  • the metal may be titanium, tantalum, tungsten or the like.
  • the conductive metal nitride may be titanium nitride, tantalum nitride, tungsten nitride or the like.
  • the first passivation dielectric layer 101 may be at least one of silicon oxide, silicon nitride, silicon oxynitride, and low-k dielectric material.
  • the first passivation dielectric layer 101 is formed, for example, by plasma enhanced chemical vapor deposition (PECVD).
  • the thickness of the first passivation dielectric layer 101 is preferably 40 to 50 nm.
  • the first dielectric hole 102 is formed by a conventional photolithography and etching method, and the photolithographic aperture is preferably 10 to 200 nm.
  • the angle between the side wall of the first dielectric hole 102 and the bottom surface is preferably between 90° ⁇ 15°.
  • the first dielectric aperture 102 can also be a steep aperture.
  • the first magnetic layer 103 may be a ferromagnetic metal Fe, Co, Ni and alloys thereof NiFe, FeCo, etc., or other doping alloys such as FeTaN, CoFeB, CoFeZr, etc., or may be a semi-metal with high spin polarizability. Materials such as Fe 3 O 4 , Co 2 MnSi, Co 2 FeSi, and the like.
  • first dielectric hole 102 for example, physical vapor deposition, molecular beam epitaxy, sputtering, or the like can be employed. Further, chemical mechanical polishing may also be performed after depositing the first magnetic layer to remove the first magnetic layer 103 outside the first dielectric hole 102.
  • the second passivation dielectric layer 104 is formed on the first magnetic layer 103 and the first passivation dielectric layer 101, and the second is formed in the second passivation dielectric layer 104.
  • the dielectric hole 105 has a resultant structure as shown in FIG.
  • the second passivation dielectric layer 104 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, and low-k dielectric material.
  • the second passivation dielectric layer 104 is formed, for example, by plasma enhanced chemical vapor deposition (PECVD).
  • PECVD plasma enhanced chemical vapor deposition
  • the thickness of the second passivation dielectric layer 104 is preferably 40 to 50 nm.
  • the second dielectric hole 105 is formed by a conventional photolithography and etching method, and the photolithographic aperture thereof preferably coincides with the photolithographic aperture of the first dielectric hole 102, preferably 10 to 200 nm.
  • the angle between the side wall of the second medium hole 105 and the bottom surface is preferably between 90 ° ⁇ 15 °. The tilt angle facilitates material filling, especially tunneling step coverage, to improve device reliability and yield.
  • the second medium hole 105 may also be a steep straight hole.
  • the tunneling insulating layer 106 may be an oxide such as Al 2 O 3 , MgO material, or the like, a nitride such as AlN, or a semiconductor material such as EuS, ZnS, ZnSe or the like.
  • the second magnetic layer 107 may be a ferromagnetic metal Fe, Co, Ni and alloys thereof NiFe, FeCo, or other doping alloys such as FeTaN, CoFeB, CoFeZr, etc., and may also be a semi-metal material having a high spin polarizability such as Fe. 3 O 4 , Co 2 MnSi, Co 2 FeSi, and the like.
  • the method of forming the tunnel insulating layer 106 for example, it may be a molecular beam epitaxy method or an electron beam deposition method.
  • the method of forming the second magnetic layer 107 may be, for example, physical vapor deposition, molecular beam epitaxy, sputtering, or the like. Further, after the tunneling insulating layer 106 and the second magnetic layer 107 are deposited, chemical mechanical polishing may be performed to remove the tunneling insulating layer and the above materials outside the hole.
  • the top electrode 108 is formed over the second magnetic layer 107.
  • the material of the top electrode 108 may be ruthenium, rhodium, palladium, titanium, platinum, gold, silver, copper or the like.
  • a schematic structural view of the formed magnetic tunnel junction is shown in FIG.
  • a barrier layer may be introduced between the first magnetic layer and the bottom electrode and between the second magnetic layer and the top electrode, respectively.
  • a 40 to 50 nm SiO 2 material is grown as the first passivation dielectric layer 101 on the bottom electrode 100 by plasma enhanced chemical vapor deposition.
  • the material of the bottom electrode 100 is metal tungsten.
  • the first dielectric hole 102 is formed by a conventional photolithography and etching method, and the photolithographic aperture is 30 nm.
  • Etching is performed using an inductively coupled plasma (CCP) etch machine in a high C/F atmosphere to achieve a high selectivity to metal.
  • CCP inductively coupled plasma
  • the bottom electrode barrier layer and the first magnetic layer 103 are sequentially deposited by a physical weather deposition method, and the total thickness is the same as that of the first passivation dielectric layer 101, that is, 40 to 50 nm.
  • the bottom electrode barrier layer is Ta/Ru
  • the first magnetic layer 103 is a CoFe-based material. Then, chemical mechanical polishing is performed.
  • a second passivation dielectric layer 104 is deposited on the first magnetic layer 103 to a thickness of about 40 to 50 nm, and the second dielectric hole 105 is formed by photolithography and etching.
  • the lithographic aperture is in principle identical to the lithographic aperture of the first dielectric aperture, ie the lithographic aperture is 30 nm.
  • An inductively coupled plasma (CCP) etch machine was used in a high C/F atmosphere to achieve a high selectivity to metal.
  • the side wall of the second medium hole is slightly inclined at an angle of 88°.
  • a tunnel insulating layer 106 having a thickness of 1 nm is formed by molecular beam epitaxy in the second dielectric hole 105, and then the second magnetic layer 107 is sequentially deposited. And a barrier layer having a total thickness of about 40 to 50 nm.
  • the tunneling insulating layer 106 is MgO
  • the second magnetic layer 107 is made of CoFeB
  • the barrier layer is made of Ru. Then chemical mechanical polishing is performed to remove the tunneling layer and the above materials outside the second dielectric hole.
  • top electrode 108 is formed on the above structure, and the top electrode material is a metal crucible.
  • the magnetic tunnel junction manufacturing method of the invention avoids the etching process of the magnetic tunnel junction core layer material (magnetic layer and tunneling insulating layer), and etches the conventional semiconductor material, thereby greatly reducing the manufacturing process, especially the etching process. Difficulty.
  • the magnetic tunnel junction manufacturing method of the present invention makes the edges of the first magnetic layer and the second magnetic layer relatively far apart (distance is much larger than the tunneling layer thickness), thereby effectively avoiding the passage of the first magnetic layer and the second magnetic layer. Edge leakage leads to the possibility of device failure.
  • the magnetic tunnel junction includes a bottom electrode 100; a first passivation dielectric layer 101 formed on the bottom electrode 100 and having a first dielectric hole; a first magnetic layer 103 formed in the first dielectric hole, the first magnetic layer 103 The top surface is in the same plane as the top surface of the first passivation dielectric layer 101; the second passivation dielectric layer 104 is on the first magnetic layer 103 and has a second dielectric hole; the tunneling insulating layer 106 and the second magnetic A layer 107 is sequentially formed in the second dielectric hole; and a top electrode 108 is disposed on the second magnetic layer 107.
  • the first dielectric aperture is a steep dielectric aperture.
  • the angle between the sidewall of the first dielectric hole and the bottom surface is preferably between 90° ⁇ 15°.
  • the lithographic aperture diameter of the first dielectric hole is 10 to 200 nm.
  • the second media aperture is a steep straight aperture.
  • the angle between the side wall of the second medium hole and the bottom surface is between 90° ⁇ 15°.
  • the lithographic aperture of the second dielectric aperture is the same as the lithographic aperture diameter of the first dielectric aperture.
  • the first passivation dielectric layer has a thickness of 40 to 50 nm
  • the second passivation dielectric layer has a thickness of 40 to 50 nm.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Disclosed in the present invention are a magnetic tunnel junction and a manufacturing method therefor. The manufacturing method for the magnetic tunnel junction comprises the following steps: a step of forming a first dielectric hole: forming a first passivated dielectric layer on a bottom electrode and forming the first dielectric hole in the first passivated dielectric layer; a step of forming a first magnetic layer: forming the first magnetic layer in the first dielectric hole, and enabling a top surface of the first magnetic layer and a top surface of the first passivated dielectric layer to be in the same plane; a step of forming a second dielectric hole: forming a second passivated dielectric layer on the first magnetic layer and forming the second dielectric hole in the second passivated dielectric layer; a step of forming a tunneling insulation layer and a second magnetic layer: sequentially forming the tunneling insulation layer and the second magnetic layer in the second dielectric hole; and a step of forming a top electrode: forming the top electrode on the second magnetic layer. The magnetic tunnel junction and the manufacturing method therefor of the present invention effectively reduce the etching process difficulty of the magnetic tunnel junction and improve the reliability and yield of devices.

Description

一种磁隧道结及其制造方法Magnetic tunnel junction and manufacturing method thereof 技术领域Technical field
本发明涉及磁性随机存储器领域，具体涉及一种磁隧道结及其制造方法。The present invention relates to the field of magnetic random access memories, and in particular to a magnetic tunnel junction and a method of fabricating the same.
背景技术Background technique
磁性随机存储器(Magnetic Random Access Memory，MRAM)是一种非挥发性的磁性随机存储器，它拥有静态随机存储器(SRAM)的高速读取写入能力，以及动态随机存储器(DRAM)的高集成度，而且基本上可以无限次地重复写入，是晶圆制造工业领域的主流产品之一。Magnetic Random Access Memory (MRAM) is a non-volatile magnetic random access memory with high-speed read and write capability of static random access memory (SRAM) and high integration of dynamic random access memory (DRAM). And it can basically repeat writing indefinitely, which is one of the mainstream products in the wafer manufacturing industry.
磁隧道结(MTJ)是MRAM的核心结构，该结构由固定层、非磁性隔离层和自由层组成。其中，固定层较厚，磁性较强，磁矩不容易反转，而自由层较薄，磁性较弱，磁矩容易反转。根据自由层和固定层之间磁矩平行和反平行的变化，输出“0”或“1”的状态。自由层是存储信息的磁性薄膜，使用软铁磁材料，具有比较低的矫顽力，较高的磁导率以及对低磁场的高敏感性。常见的材料如CoFe、NiFe、NiFeCo、CoFeB(使用较多)等。隔离层是厚度仅有1～2nm的非磁性薄膜，如MgO或Al 2O 3等。固定层是MRAM单元中磁场具有固定方向的薄膜。材料的选择应当与反铁磁层具有较强的交换偏置作用，从而使被钉扎层的磁矩能够被有效地钉扎在固定的方向上。关于这类材料，比较合适的有CoFe，CoFeB等。 The magnetic tunnel junction (MTJ) is the core structure of the MRAM, which consists of a fixed layer, a non-magnetic isolation layer, and a free layer. Among them, the fixed layer is thicker, the magnetism is stronger, the magnetic moment is not easy to reverse, and the free layer is thinner, the magnetism is weaker, and the magnetic moment is easily reversed. A state of "0" or "1" is output according to a change in parallel and anti-parallel magnetic moment between the free layer and the fixed layer. The free layer is a magnetic film that stores information, using a soft ferromagnetic material, has a relatively low coercive force, a high magnetic permeability, and a high sensitivity to a low magnetic field. Common materials such as CoFe, NiFe, NiFeCo, CoFeB (used more). The separator is a non-magnetic film having a thickness of only 1 to 2 nm, such as MgO or Al 2 O 3 . The fixed layer is a film in which the magnetic field has a fixed direction in the MRAM cell. The choice of material should have a strong exchange bias with the antiferromagnetic layer so that the magnetic moment of the pinned layer can be effectively pinned in a fixed direction. For such materials, CoFe, CoFeB and the like are more suitable.
在磁隧道结制造工艺中，需要通过刻蚀的方法(参见专利文献1～6)对磁隧道结进行图形化。如上所述，MTJ的材料是难于干法刻蚀的材料如Fe、Co、Mg等，难以形成挥发产物，并且不能采用腐蚀气体(Cl 2等)，否则会影响MTJ的性能。因此需要采用比较复杂的刻蚀方法才能实现，并且刻蚀工艺具有较高的难度。 In the magnetic tunnel junction manufacturing process, it is necessary to pattern the magnetic tunnel junction by etching (see Patent Documents 1 to 6). As described above, the material of the MTJ is a material which is difficult to dry-etch, such as Fe, Co, Mg, etc., it is difficult to form a volatile product, and an etching gas (Cl 2 or the like) cannot be used, which may affect the performance of the MTJ. Therefore, a relatively complicated etching method is required, and the etching process has high difficulty.
在专利文献7中所记载的刻蚀方法中，采用了大马士革镶嵌的方法，但是由于介质刻蚀形貌局限等镶嵌工艺的特点，难以获得高密度的MTJ点阵。另外，因为隧穿层很薄，化学机械研磨的工艺会造成材料表面变形或少量的金属残留物，可能使第一磁性层和第二磁性层在研磨面上存在导电通道，从而导致短路和器件失效。In the etching method described in Patent Document 7, a damascene inlay method is employed, but it is difficult to obtain a high-density MTJ dot matrix due to the characteristics of the inlay process such as the limitation of the dielectric etching morphology. In addition, because the tunneling layer is very thin, the chemical mechanical polishing process may cause surface deformation or a small amount of metal residue, which may cause the first magnetic layer and the second magnetic layer to have conductive paths on the polishing surface, thereby causing short circuit and device. Invalid.
专利文献1 US20090209102；Patent Document 1 US20090209102;
专利文献2 US8629518；Patent Document 2 US8629518;
专利文献3 US8962349；Patent Document 3 US8962349;
专利文献4 CN103682084A；Patent Document 4 CN103682084A;
专利文献5 CN1801390A；Patent Document 5 CN1801390A;
专利文献6 US7397099；Patent Document 6 US7397099;
专利文献7 CN103066199A。Patent Document 7 CN103066199A.
因此，目前亟待需要提出一种能够降低磁隧道结刻蚀工艺难度并保证器件的可靠性和良率的技术方案，从而进一步降低产品制造成本，提升产品品质。Therefore, there is an urgent need to propose a technical solution capable of reducing the difficulty of the magnetic tunnel junction etching process and ensuring the reliability and yield of the device, thereby further reducing the manufacturing cost of the product and improving the product quality.
发明内容Summary of the invention
为了解决上述问题，本发明公开一种磁隧道结及其制造方法。本发明的磁隧道结制造方法，包括以下步骤：第一介质孔形成步骤，在底电极上形成第一钝化介质层，并在所述第一钝化介质层中形成第一介质孔；第一磁性层形成步骤，在所述第一介质孔中形成第一磁性层，使所述第一磁性层的顶面与所述第一钝化介质层的顶面处于同一平面；第二介质孔形成步骤，在所述第一磁性层上形成第二钝化介质层，并在所述第二钝化介质层中形成第二介质孔；隧穿绝缘层及第二磁性层形成步骤，在所述第二介质孔中依次形成隧穿绝缘层和第二磁性层；以及顶电极形成步骤，在所述第二磁性层上形成顶电极。In order to solve the above problems, the present invention discloses a magnetic tunnel junction and a method of fabricating the same. The magnetic tunnel junction manufacturing method of the present invention includes the following steps: a first dielectric hole forming step of forming a first passivation dielectric layer on the bottom electrode, and forming a first dielectric hole in the first passivation dielectric layer; a magnetic layer forming step of forming a first magnetic layer in the first dielectric hole such that a top surface of the first magnetic layer and a top surface of the first passivation dielectric layer are in the same plane; a forming step of forming a second passivation dielectric layer on the first magnetic layer, and forming a second dielectric hole in the second passivation dielectric layer; a tunneling insulating layer and a second magnetic layer forming step, Forming a tunneling insulating layer and a second magnetic layer in the second dielectric hole; and a top electrode forming step of forming a top electrode on the second magnetic layer.
本发明的磁隧道结制造方法中，优选为，所述第一介质孔或第二介质孔为陡直形孔。In the method of manufacturing a magnetic tunnel junction of the present invention, preferably, the first dielectric hole or the second dielectric hole is a steep straight hole.
本发明的磁隧道结制造方法中，优选为，所述第一介质孔的侧壁与底面的夹角角度在90°±15°之间。In the method for manufacturing a magnetic tunnel junction according to the present invention, preferably, an angle between an edge of the first dielectric hole and a bottom surface is between 90°±15°.
本发明的磁隧道结制造方法中，优选为，所述第二介质孔的侧壁与底面的夹角角度在90°±15°之间。In the magnetic tunnel junction manufacturing method of the present invention, preferably, the angle between the side wall of the second dielectric hole and the bottom surface is between 90°±15°.
本发明的磁隧道结制造方法中，优选为，所述第一介质孔的光刻孔径直径为10～200nm。In the method of manufacturing a magnetic tunnel junction of the present invention, it is preferable that the first dielectric hole has a lithographic aperture diameter of 10 to 200 nm.
本发明的磁隧道结制造方法中，优选为，所述第二介质孔的光刻孔径与所述第一介质孔的光刻孔径的直径相同。In the method of manufacturing a magnetic tunnel junction of the present invention, preferably, the lithographic aperture of the second dielectric hole is the same as the diameter of the lithographic aperture of the first dielectric aperture.
本发明的磁隧道结制造方法中，优选为，所述第一钝化介质层的厚度为40～50nm，所述第二钝化介质层的厚度为40～50nm。In the method of manufacturing a magnetic tunnel junction of the present invention, preferably, the first passivation dielectric layer has a thickness of 40 to 50 nm, and the second passivation dielectric layer has a thickness of 40 to 50 nm.
本发明还公开一种磁隧道结，包括：底电极；第一钝化介质层，形成于所述底电极上，并具有第一介质孔；第一磁性层，形成于所述第一介质孔中，所述第一磁性层的顶面与所述第一钝化介质层的顶面处于同一平面；第二钝化介质层，位于所述第一磁性层上，并具有第二介质孔；隧穿绝缘层及第二磁性层，形成于所述第二介质孔中；以及顶电极，位于所述第二磁性层上。The invention also discloses a magnetic tunnel junction, comprising: a bottom electrode; a first passivation dielectric layer formed on the bottom electrode and having a first dielectric hole; a first magnetic layer formed on the first dielectric hole The top surface of the first magnetic layer is in the same plane as the top surface of the first passivation dielectric layer; the second passivation dielectric layer is located on the first magnetic layer and has a second dielectric hole; Tunneling an insulating layer and a second magnetic layer formed in the second dielectric hole; and a top electrode on the second magnetic layer.
本发明的磁隧道结，优选为，所述第二介质孔的侧壁与底面的夹角角度在90°±15°之间。In the magnetic tunnel junction of the present invention, preferably, the angle between the side wall and the bottom surface of the second dielectric hole is between 90°±15°.
本发明的磁隧道结制造方法，避免了对磁隧道结核心层材料(磁性层和隧穿绝缘层)的刻蚀工艺，改为刻蚀常规半导体材料，大大降低了制造工艺尤其是刻蚀工艺的难度。另外，本发明的磁隧道结制造方法使第一磁性层和第二磁性层的边缘相对较远(距离远远大于隧穿层厚度)，从而有效防止由于第一磁性层和第二磁性层边缘漏电导致器件失效的可能性。The magnetic tunnel junction manufacturing method of the invention avoids the etching process of the magnetic tunnel junction core layer material (magnetic layer and tunneling insulating layer), and etches the conventional semiconductor material, thereby greatly reducing the manufacturing process, especially the etching process. Difficulty. In addition, the magnetic tunnel junction manufacturing method of the present invention makes the edges of the first magnetic layer and the second magnetic layer relatively far apart (the distance is much larger than the tunneling layer thickness), thereby effectively preventing the edges of the first magnetic layer and the second magnetic layer from being effectively prevented. Leakage causes the possibility of device failure.
附图说明DRAWINGS
图1是本发明的磁隧道结制造方法的流程示意图；1 is a schematic flow chart of a method of manufacturing a magnetic tunnel junction of the present invention;
图2是本发明的磁隧道结制造方法中形成第一介质层后的器件结构示意图；2 is a schematic view showing the structure of a device after forming a first dielectric layer in the magnetic tunnel junction manufacturing method of the present invention;
图3是本发明的磁隧道结制造方法中形成第一介质孔后的器件结构示意图；3 is a schematic structural view of a device after forming a first dielectric hole in the magnetic tunnel junction manufacturing method of the present invention;
图4是本发明的磁隧道结制造方法中形成第一磁性层后的器件结构示意图；4 is a schematic structural view of a device after forming a first magnetic layer in a method of manufacturing a magnetic tunnel junction according to the present invention;
图5是本发明的磁隧道结制造方法中形成第二介质孔后的器件结构示意图；5 is a schematic structural view of a device after forming a second dielectric hole in the magnetic tunnel junction manufacturing method of the present invention;
图6是本发明的磁隧道结制造方法中形成隧穿绝缘层和第二磁性层后的器件结构示意图；6 is a schematic view showing the structure of a device after forming a tunnel insulating layer and a second magnetic layer in the magnetic tunnel junction manufacturing method of the present invention;
图7是利用本发明的磁隧道结制造方法形成的磁隧道结的结构示意图。Fig. 7 is a schematic view showing the structure of a magnetic tunnel junction formed by the magnetic tunnel junction manufacturing method of the present invention.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. The examples are only intended to illustrate the invention and are not intended to limit the invention. The described embodiments are only a part of the embodiments of the invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
在本发明的描述中，需要说明的是，术语“上”、“下”、“陡直”、“倾斜”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。In the description of the present invention, it is to be noted that the orientation or positional relationship of the terms "upper", "lower", "steep", "tilted", etc., is based on the orientation or positional relationship shown in the drawings, only The present invention and the simplification of the description are not to be construed as limiting or limiting the invention. Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
此外，在下文中描述了本发明的许多特定的细节，例如器件的结构、材料、尺寸、处理工艺和技术，以便更清楚地理解本发明。但正如本领域的技术人员能够理解的那样，可以不按照这些特定的细节来实现本发明。除非在下文中特别指出，器件中的各个部分可以由本领域的技术人员公知的材料构成，或者可以采用将来开发的具有类似功能的材料。In addition, many specific details of the invention are described below, such as the structure, materials, dimensions, processing, and techniques of the invention in order to provide a clear understanding of the invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art. Unless otherwise indicated hereinafter, various portions of the device may be constructed from materials well known to those skilled in the art, or materials having similar functions developed in the future may be employed.
图1是本发明的磁隧道结制造方法的流程示意图。如图1所示，本发明的磁隧道结制造方法中，首先，在第一介质孔形成步骤S1中，在底电极100上形成第一钝化介质层101，并在第一钝化介质层101中形成第一介质孔102，所得的器件结构如图2、图3所示。具体而言，底电极100材料可以为导电材料，包括掺杂有掺杂剂的半导体、金属、导电的金属氮化物等。其中，掺杂有掺杂剂的半导体可以是掺杂的硅、掺杂的锗等。金属可以是钛、钽、钨等。导电的金属氮化物可以是钛氮化物、钽氮化物、钨氮化物等。第一钝化介质层101可以是硅氧化物、硅氮化物、硅氧氮化物和低K电介质材料中的至少一种。例如通过等离子体增强化学的气相沉积法(PECVD)形成第一钝化介质层101。第一钝化介质层101的厚度优选为40～50nm。通过常规光刻和刻蚀方法，形成第一介质孔102，光刻孔径优选为10～200nm。第一介质孔102的侧壁与底面的夹角角度优选在90°±15°之间。第一介质孔102也可以是陡直形孔。1 is a schematic flow chart of a method of manufacturing a magnetic tunnel junction of the present invention. As shown in FIG. 1, in the magnetic tunnel junction manufacturing method of the present invention, first, in the first dielectric hole forming step S1, a first passivation dielectric layer 101 is formed on the bottom electrode 100, and in the first passivation dielectric layer. The first dielectric hole 102 is formed in 101, and the resulting device structure is as shown in FIGS. 2 and 3. Specifically, the material of the bottom electrode 100 may be a conductive material, including a semiconductor doped with a dopant, a metal, a conductive metal nitride, or the like. The semiconductor doped with the dopant may be doped silicon, doped germanium or the like. The metal may be titanium, tantalum, tungsten or the like. The conductive metal nitride may be titanium nitride, tantalum nitride, tungsten nitride or the like. The first passivation dielectric layer 101 may be at least one of silicon oxide, silicon nitride, silicon oxynitride, and low-k dielectric material. The first passivation dielectric layer 101 is formed, for example, by plasma enhanced chemical vapor deposition (PECVD). The thickness of the first passivation dielectric layer 101 is preferably 40 to 50 nm. The first dielectric hole 102 is formed by a conventional photolithography and etching method, and the photolithographic aperture is preferably 10 to 200 nm. The angle between the side wall of the first dielectric hole 102 and the bottom surface is preferably between 90° ± 15°. The first dielectric aperture 102 can also be a steep aperture.
接下来，在第一磁性层形成步骤S2中，在第一介质孔102中形成第一磁性层103，并使第一磁性层103的顶面与第一钝化介质层101的顶面处于同一平面，所得结构图4所示。其中，第一磁性层103可以是铁磁金属Fe、Co、Ni及其合金NiFe、FeCo等，也可以是其他掺杂合金如FeTaN、CoFeB、CoFeZr等，还可以是高自旋极化率的半金属材料如Fe 3O 4、Co 2MnSi、Co 2FeSi等。关于第一介质孔102的形成方法，例如可以采用物理气相沉积、分子束外延、溅射等。进一步地，也可以在沉积第一磁性层之后进行化学机械抛光，去除第一介质孔102外的第一磁性层103。 Next, in the first magnetic layer forming step S2, the first magnetic layer 103 is formed in the first dielectric hole 102, and the top surface of the first magnetic layer 103 is identical to the top surface of the first passivation dielectric layer 101. Plane, the resulting structure is shown in Figure 4. The first magnetic layer 103 may be a ferromagnetic metal Fe, Co, Ni and alloys thereof NiFe, FeCo, etc., or other doping alloys such as FeTaN, CoFeB, CoFeZr, etc., or may be a semi-metal with high spin polarizability. Materials such as Fe 3 O 4 , Co 2 MnSi, Co 2 FeSi, and the like. Regarding the method of forming the first dielectric hole 102, for example, physical vapor deposition, molecular beam epitaxy, sputtering, or the like can be employed. Further, chemical mechanical polishing may also be performed after depositing the first magnetic layer to remove the first magnetic layer 103 outside the first dielectric hole 102.
接下来，在第二介质孔形成步骤S3中，在第一磁性层103和第一钝化介质层101上形成第二钝化介质层104，并在第二钝化介质层104中形成第二介质孔105，所得结构如图5所示。其中，第二钝化介质层104可以包括硅氧化物、硅氮化物、硅氧氮化物和低K电介质材料中的至少一种。例如通过等离子体增强化学的气相沉积法(PECVD)形成第二钝化介质层104。第二钝化介质层104的厚度优选为40～50nm。通过常规光刻和刻蚀方法，形成第二介质孔105，其光刻孔径优选与第一介质孔102光刻孔径一致，优选为10～200nm。第二介质孔105的侧壁与底面的夹角角度优选在90°±15°之间。倾斜角度有利于材料填充，尤其是隧穿的台阶覆盖，以便提高器件的可靠性和良率。第二介质孔105也可以是陡直形孔。Next, in the second dielectric hole forming step S3, the second passivation dielectric layer 104 is formed on the first magnetic layer 103 and the first passivation dielectric layer 101, and the second is formed in the second passivation dielectric layer 104. The dielectric hole 105 has a resultant structure as shown in FIG. The second passivation dielectric layer 104 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, and low-k dielectric material. The second passivation dielectric layer 104 is formed, for example, by plasma enhanced chemical vapor deposition (PECVD). The thickness of the second passivation dielectric layer 104 is preferably 40 to 50 nm. The second dielectric hole 105 is formed by a conventional photolithography and etching method, and the photolithographic aperture thereof preferably coincides with the photolithographic aperture of the first dielectric hole 102, preferably 10 to 200 nm. The angle between the side wall of the second medium hole 105 and the bottom surface is preferably between 90 ° ± 15 °. The tilt angle facilitates material filling, especially tunneling step coverage, to improve device reliability and yield. The second medium hole 105 may also be a steep straight hole.
在隧穿绝缘层及第二磁性层形成步骤S4中，在第二介质孔105中依次形成隧穿绝缘层106和第二磁性层107，所得结构如图6所示。隧穿绝缘层106可以为氧化物，诸如Al 2O 3、MgO材料等，也可以是氮化物如AlN，还可以是半导体材料如EuS、ZnS、ZnSe等。第二磁性层107可以是铁磁金属Fe、Co、Ni及其合金NiFe、FeCo，也可以是其他掺杂合金如FeTaN、CoFeB、CoFeZr等，还可以是高自旋极化率的半金属材料如Fe 3O 4、Co 2MnSi、Co 2FeSi等。至于形成隧穿绝缘层106的方法，例如可以是分子束外延方法或电子束沉积方法。形成第二磁性层107的方法，例如可以为物理气相沉积、分子束外延、溅射等。进一步地，可以在沉积隧穿绝缘层106及第二磁性层107后，进行化学机械抛光，去除孔外的隧穿绝缘层及以上材料。 In the tunneling insulating layer and the second magnetic layer forming step S4, the tunnel insulating layer 106 and the second magnetic layer 107 are sequentially formed in the second dielectric hole 105, and the resultant structure is as shown in FIG. The tunneling insulating layer 106 may be an oxide such as Al 2 O 3 , MgO material, or the like, a nitride such as AlN, or a semiconductor material such as EuS, ZnS, ZnSe or the like. The second magnetic layer 107 may be a ferromagnetic metal Fe, Co, Ni and alloys thereof NiFe, FeCo, or other doping alloys such as FeTaN, CoFeB, CoFeZr, etc., and may also be a semi-metal material having a high spin polarizability such as Fe. 3 O 4 , Co 2 MnSi, Co 2 FeSi, and the like. As for the method of forming the tunnel insulating layer 106, for example, it may be a molecular beam epitaxy method or an electron beam deposition method. The method of forming the second magnetic layer 107 may be, for example, physical vapor deposition, molecular beam epitaxy, sputtering, or the like. Further, after the tunneling insulating layer 106 and the second magnetic layer 107 are deposited, chemical mechanical polishing may be performed to remove the tunneling insulating layer and the above materials outside the hole.
最后，在顶电极形成步骤S5中，在第二磁性层107上方形成顶电极108。顶电极108的材料可以为钌、钽、钯、钛、铂、金、银、铜等。在图7中示出了形成的磁隧道结的结构示意图。Finally, in the top electrode forming step S5, the top electrode 108 is formed over the second magnetic layer 107. The material of the top electrode 108 may be ruthenium, rhodium, palladium, titanium, platinum, gold, silver, copper or the like. A schematic structural view of the formed magnetic tunnel junction is shown in FIG.
以上针对磁隧道结制造方法的具体实施方式进行了说明，但是本发明不限定于此，各步骤的具体实施方式根据情况可以不同。例如为了进一步提高器件的性能，可以在第一磁性层与底电极之间，在第二磁性层与顶电极之间分别引入阻挡层。Although the specific embodiment of the magnetic tunnel junction manufacturing method has been described above, the present invention is not limited thereto, and specific embodiments of the respective steps may be different depending on the situation. For example, in order to further improve the performance of the device, a barrier layer may be introduced between the first magnetic layer and the bottom electrode and between the second magnetic layer and the top electrode, respectively.
为了进一步清楚地阐述磁隧道结制造方法，以下详细介绍磁隧道结制造方法的一个实施例。In order to further clarify the magnetic tunnel junction manufacturing method, one embodiment of the magnetic tunnel junction manufacturing method will be described in detail below.
首先，在第一介质孔形成步骤S1中，在底电极100上，利用等离子体增强化学的气相沉积法生长40～50nm的SiO 2材料作为第一钝化介质层101。其中，底电极100的材料是金属钨。然后，通过常规光刻和刻蚀方法形成第一介质孔102，光刻孔径为30nm。刻蚀采用电感耦合等离子体(CCP)刻蚀机，在高C/F气氛下进行，以获得对金属的高选择比。刻蚀出侧壁陡直的孔并停止于底层底电极100上。 First, in the first dielectric hole forming step S1, a 40 to 50 nm SiO 2 material is grown as the first passivation dielectric layer 101 on the bottom electrode 100 by plasma enhanced chemical vapor deposition. The material of the bottom electrode 100 is metal tungsten. Then, the first dielectric hole 102 is formed by a conventional photolithography and etching method, and the photolithographic aperture is 30 nm. Etching is performed using an inductively coupled plasma (CCP) etch machine in a high C/F atmosphere to achieve a high selectivity to metal. A hole having a steep side wall is etched and stopped on the underlying bottom electrode 100.
之后，在第一磁性层形成步骤S2中，采用物理气象沉积方法依次沉积底电极阻挡层以及第一磁性层103，总厚度与第一钝化介质层101相同，即40～50nm。其中，底电极阻挡层为Ta/Ru，第一磁性层103为CoFe类材料。然后，进行化学机械抛光。Thereafter, in the first magnetic layer forming step S2, the bottom electrode barrier layer and the first magnetic layer 103 are sequentially deposited by a physical weather deposition method, and the total thickness is the same as that of the first passivation dielectric layer 101, that is, 40 to 50 nm. The bottom electrode barrier layer is Ta/Ru, and the first magnetic layer 103 is a CoFe-based material. Then, chemical mechanical polishing is performed.
接下来，在第二介质孔形成步骤S3中，在第一磁性层103上沉积第二钝化介质层104，厚度约40～50nm，并通过光刻和刻蚀的方法形成第二介质孔105。光刻孔径原则上与第一介质孔光刻孔径一致，即光刻孔径为30nm。采用电感耦合等离子体(CCP)刻蚀机，在高C/F气氛下进行，以获得对金属的高选择比。第二介质孔的侧壁略倾斜，角度为88°。Next, in the second dielectric hole forming step S3, a second passivation dielectric layer 104 is deposited on the first magnetic layer 103 to a thickness of about 40 to 50 nm, and the second dielectric hole 105 is formed by photolithography and etching. . The lithographic aperture is in principle identical to the lithographic aperture of the first dielectric aperture, ie the lithographic aperture is 30 nm. An inductively coupled plasma (CCP) etch machine was used in a high C/F atmosphere to achieve a high selectivity to metal. The side wall of the second medium hole is slightly inclined at an angle of 88°.
接下来，在隧穿绝缘层和第二磁性层形成步骤S4中，在上述第二介质孔105中利用分子束外延形成厚度为1nm的隧穿绝缘层106，然后依次淀积第二磁性层107和阻挡层，总厚度约40～50nm。其中，隧穿绝缘层106为MgO，第二磁性层107材料为CoFeB，阻挡层材料为Ru。然后进行化学机械抛光，去除第二介质孔外的隧穿层及以上材料。Next, in the tunneling insulating layer and the second magnetic layer forming step S4, a tunnel insulating layer 106 having a thickness of 1 nm is formed by molecular beam epitaxy in the second dielectric hole 105, and then the second magnetic layer 107 is sequentially deposited. And a barrier layer having a total thickness of about 40 to 50 nm. The tunneling insulating layer 106 is MgO, the second magnetic layer 107 is made of CoFeB, and the barrier layer is made of Ru. Then chemical mechanical polishing is performed to remove the tunneling layer and the above materials outside the second dielectric hole.
最后，在上述结构上形成顶电极108，顶电极材料为金属钽。Finally, a top electrode 108 is formed on the above structure, and the top electrode material is a metal crucible.
本发明的磁隧道结制造方法，避免了对磁隧道结核心层材料(磁性层和隧穿绝缘层)的刻蚀工艺，改为刻蚀常规半导体材料，大大降低了制造工艺尤其是刻蚀工艺的难度。另外，本发明的磁隧道结制造方法使第一磁性层和第二磁性层的边缘相对较远(距离远远大于隧穿层厚度)，从而有效避免了第一磁性层和第二磁性层通过边缘漏电导致器件失效的可能性。The magnetic tunnel junction manufacturing method of the invention avoids the etching process of the magnetic tunnel junction core layer material (magnetic layer and tunneling insulating layer), and etches the conventional semiconductor material, thereby greatly reducing the manufacturing process, especially the etching process. Difficulty. In addition, the magnetic tunnel junction manufacturing method of the present invention makes the edges of the first magnetic layer and the second magnetic layer relatively far apart (distance is much larger than the tunneling layer thickness), thereby effectively avoiding the passage of the first magnetic layer and the second magnetic layer. Edge leakage leads to the possibility of device failure.
本发明的另一方面提供一种磁隧道结。以下结合图7针对磁隧道结的具体实施例进行说明。磁隧道结包括底电极100；第一钝化介质层101，其形成于底电极100上，并具有第一介质孔；第一磁性层103，形成于第一介质孔中，第一磁性层103的顶面与第一钝化介质层101的顶面处于同一平面；第二钝化介质层104，位于第一磁性层103上，并具有第二介质孔；隧穿绝缘层106及第二磁性层107，依次形成于第二介质孔中；以及顶电极108，位于第二磁性层107上。Another aspect of the invention provides a magnetic tunnel junction. A specific embodiment of a magnetic tunnel junction will be described below with reference to FIG. The magnetic tunnel junction includes a bottom electrode 100; a first passivation dielectric layer 101 formed on the bottom electrode 100 and having a first dielectric hole; a first magnetic layer 103 formed in the first dielectric hole, the first magnetic layer 103 The top surface is in the same plane as the top surface of the first passivation dielectric layer 101; the second passivation dielectric layer 104 is on the first magnetic layer 103 and has a second dielectric hole; the tunneling insulating layer 106 and the second magnetic A layer 107 is sequentially formed in the second dielectric hole; and a top electrode 108 is disposed on the second magnetic layer 107.
可选地，第一介质孔为陡直形介质孔。可选地，第一介质孔的侧壁与底面的夹角角度优选在90°±15°之间。优选地，第一介质孔的光刻孔径直径为10～200nm。Optionally, the first dielectric aperture is a steep dielectric aperture. Optionally, the angle between the sidewall of the first dielectric hole and the bottom surface is preferably between 90°±15°. Preferably, the lithographic aperture diameter of the first dielectric hole is 10 to 200 nm.
可选地，第二介质孔为陡直形孔。优选地，第二介质孔的侧壁与底面的夹角角度在90°±15°之间。优选地，第二介质孔的光刻孔径与第一介质孔的光刻孔径直径相同。Optionally, the second media aperture is a steep straight aperture. Preferably, the angle between the side wall of the second medium hole and the bottom surface is between 90°±15°. Preferably, the lithographic aperture of the second dielectric aperture is the same as the lithographic aperture diameter of the first dielectric aperture.
优选地，第一钝化介质层的厚度为40～50nm，第二钝化介质层的厚度为40～50nm。Preferably, the first passivation dielectric layer has a thickness of 40 to 50 nm, and the second passivation dielectric layer has a thickness of 40 to 50 nm.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。The above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention. All should be covered by the scope of the present invention.

Claims (9)

  1. 一种磁隧道结制造方法，其特征在于，A method for manufacturing a magnetic tunnel junction, characterized in that
    包括以下步骤：Includes the following steps:
    第一介质孔形成步骤，在底电极上形成第一钝化介质层，并在所述第一钝化介质层中形成第一介质孔；a first dielectric hole forming step of forming a first passivation dielectric layer on the bottom electrode and forming a first dielectric hole in the first passivation dielectric layer;
    第一磁性层形成步骤，在所述第一介质孔中形成第一磁性层，使所述第一磁性层的顶面与所述第一钝化介质层的顶面处于同一平面；a first magnetic layer forming step of forming a first magnetic layer in the first dielectric hole such that a top surface of the first magnetic layer and a top surface of the first passivation dielectric layer are in the same plane;
    第二介质孔形成步骤，在所述第一磁性层上形成第二钝化介质层，并在所述第二钝化介质层中形成第二介质孔；a second dielectric hole forming step of forming a second passivation dielectric layer on the first magnetic layer and forming a second dielectric hole in the second passivation dielectric layer;
    隧穿绝缘层及第二磁性层形成步骤，在所述第二介质孔中依次形成隧穿绝缘层和第二磁性层；以及a tunneling insulating layer and a second magnetic layer forming step of sequentially forming a tunnel insulating layer and a second magnetic layer in the second dielectric hole;
    顶电极形成步骤，在所述第二磁性层上形成顶电极。A top electrode forming step of forming a top electrode on the second magnetic layer.
  2. 根据权利要求1所述的磁隧道结制造方法，其特征在于，The method of manufacturing a magnetic tunnel junction according to claim 1, wherein
    所述第一介质孔或第二介质孔为陡直形孔。The first medium hole or the second medium hole is a steep straight hole.
  3. 根据权利要求1所述的磁隧道结制造方法，其特征在于，The method of manufacturing a magnetic tunnel junction according to claim 1, wherein
    所述第一介质孔的侧壁与底面的夹角角度在90°±15°之间。The angle between the sidewall of the first dielectric hole and the bottom surface is between 90°±15°.
  4. 根据权利要求1所述的磁隧道结制造方法，其特征在于，The method of manufacturing a magnetic tunnel junction according to claim 1, wherein
    所述第二介质孔的侧壁与底面的夹角角度在90°±15°之间。The angle between the sidewall of the second dielectric hole and the bottom surface is between 90°±15°.
  5. 根据权利要求1所述的磁隧道结制造方法，其特征在于，The method of manufacturing a magnetic tunnel junction according to claim 1, wherein
    所述第一介质孔的光刻孔径直径为10～200nm。The lithographic aperture diameter of the first dielectric hole is 10 to 200 nm.
  6. 根据权利要求1所述的磁隧道结制造方法，其特征在于，The method of manufacturing a magnetic tunnel junction according to claim 1, wherein
    所述第二介质孔的光刻孔径与所述第一介质孔的光刻孔径的直径相同。The lithographic aperture of the second dielectric aperture is the same as the diameter of the lithographic aperture of the first dielectric aperture.
  7. 根据权利要求1所述的磁隧道结制造方法，其特征在于，The method of manufacturing a magnetic tunnel junction according to claim 1, wherein
    所述第一钝化介质层的厚度为40～50nm，所述第二钝化介质层的厚度为40～50nm。The first passivation dielectric layer has a thickness of 40 to 50 nm, and the second passivation dielectric layer has a thickness of 40 to 50 nm.
  8. 一种磁隧道结，其特征在于，A magnetic tunnel junction, characterized in that
    包括：include:
    底电极；Bottom electrode
    第一钝化介质层，形成于所述底电极上，并具有第一介质孔；a first passivation dielectric layer formed on the bottom electrode and having a first dielectric hole;
    第一磁性层，形成于所述第一介质孔中，所述第一磁性层的顶面与所述第一钝化介质层的顶面处于同一平面；a first magnetic layer is formed in the first dielectric hole, and a top surface of the first magnetic layer is in the same plane as a top surface of the first passivation dielectric layer;
    第二钝化介质层，位于所述第一磁性层上，并具有第二介质孔；a second passivation dielectric layer on the first magnetic layer and having a second dielectric hole;
    隧穿绝缘层及第二磁性层，依次形成于所述第二介质孔中；以及Tunneling the insulating layer and the second magnetic layer, which are sequentially formed in the second dielectric hole;
    顶电极，位于所述第二磁性层上。A top electrode is located on the second magnetic layer.
  9. 根据权利要求8所述的磁隧道结，其特征在于，The magnetic tunnel junction according to claim 8, wherein
    所述第二介质孔的侧壁与底面的夹角角度在90°±15°之间。The angle between the sidewall of the second dielectric hole and the bottom surface is between 90°±15°.
PCT/CN2018/106489 2017-12-11 2018-09-19 Magnetic tunnel junction and manufacturing method therefor WO2019114356A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711311648.0A CN108091359B (en) 2017-12-11 2017-12-11 Magnetic tunnel junction and manufacturing method thereof
CN201711311648.0 2017-12-11

Publications (1)

Publication Number Publication Date
WO2019114356A1 true WO2019114356A1 (en) 2019-06-20

Family

ID=62174822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/106489 WO2019114356A1 (en) 2017-12-11 2018-09-19 Magnetic tunnel junction and manufacturing method therefor

Country Status (2)

Country Link
CN (1) CN108091359B (en)
WO (1) WO2019114356A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108091359B (en) * 2017-12-11 2021-05-25 江苏鲁汶仪器有限公司 Magnetic tunnel junction and manufacturing method thereof
CN111162164B (en) * 2018-11-08 2023-06-13 江苏鲁汶仪器股份有限公司 Manufacturing method of semiconductor device
CN116686428A (en) * 2021-03-04 2023-09-01 华为技术有限公司 Magnetic tunnel junction, magnetic random access memory, manufacturing method of magnetic tunnel junction and magnetic random access memory and memory device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956816A (en) * 2011-08-17 2013-03-06 台湾积体电路制造股份有限公司 Hole first hardmask definition
CN103066199A (en) * 2011-10-19 2013-04-24 中芯国际集成电路制造(北京)有限公司 Novel magnetic tunnel junction device and manufacture method thereof
CN103066198A (en) * 2011-10-19 2013-04-24 中芯国际集成电路制造(北京)有限公司 Novel magnetic tunnel junction (MTJ) device and manufacturing method thereof
CN103794717A (en) * 2014-02-28 2014-05-14 北京航空航天大学 Manufacturing method for embedding type magnetic tunnel junction device comprising dielectric layers
CN108091359A (en) * 2017-12-11 2018-05-29 江苏鲁汶仪器有限公司 A kind of magnetic tunnel-junction and its manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818549B2 (en) * 2003-03-05 2004-11-16 Hewlett-Packard Development Company, L.P. Buried magnetic tunnel-junction memory cell and methods
US8149614B2 (en) * 2010-03-31 2012-04-03 Nanya Technology Corp. Magnetoresistive random access memory element and fabrication method thereof
KR20130014200A (en) * 2011-07-29 2013-02-07 삼성전자주식회사 Semiconductor device including variable resistance material and method of fabricating the same
KR20130016826A (en) * 2011-08-09 2013-02-19 에스케이하이닉스 주식회사 Method for fabricating semiconductor device
KR20150102302A (en) * 2014-02-28 2015-09-07 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
CN103359683B (en) * 2013-07-10 2016-01-20 华中科技大学 A kind of preparation method of MTJ nano column array
US9490423B2 (en) * 2014-11-11 2016-11-08 Globalfoundries Singapore Pte. Ltd. Integrated circuit structures with spin torque transfer magnetic random access memory ultilizing aluminum metallization layers and methods for fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956816A (en) * 2011-08-17 2013-03-06 台湾积体电路制造股份有限公司 Hole first hardmask definition
CN103066199A (en) * 2011-10-19 2013-04-24 中芯国际集成电路制造(北京)有限公司 Novel magnetic tunnel junction device and manufacture method thereof
CN103066198A (en) * 2011-10-19 2013-04-24 中芯国际集成电路制造(北京)有限公司 Novel magnetic tunnel junction (MTJ) device and manufacturing method thereof
CN103794717A (en) * 2014-02-28 2014-05-14 北京航空航天大学 Manufacturing method for embedding type magnetic tunnel junction device comprising dielectric layers
CN108091359A (en) * 2017-12-11 2018-05-29 江苏鲁汶仪器有限公司 A kind of magnetic tunnel-junction and its manufacturing method

Also Published As

Publication number Publication date
CN108091359A (en) 2018-05-29
CN108091359B (en) 2021-05-25

Similar Documents

Publication Publication Date Title
US11569441B2 (en) Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy
US8736004B2 (en) Magnetic tunnel junction for MRAM applications
US8722543B2 (en) Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices
US7449345B2 (en) Capping structure for enhancing dR/R of the MTJ device
US9196825B2 (en) Reversed stack MTJ
US8587043B2 (en) Magnetoresistive random access memory and method of manufacturing the same
US8975091B2 (en) Method of fabricating a magnetic tunnel junction device
US7374952B2 (en) Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof
WO2019114356A1 (en) Magnetic tunnel junction and manufacturing method therefor
US11545617B2 (en) Method of fabricating magnetic memory device
US6638774B2 (en) Method of making resistive memory elements with reduced roughness
US8896040B2 (en) Magneto-resistive random access memory (MRAM) having a plurality of concentrically aligned magnetic tunnel junction layers and concentrically aligned upper electrodes over a lower electrode
US20190288191A1 (en) Selective growth of seed layer for magneto-resistive random access memory
US8574927B2 (en) Magnetic tunnel junction device and its fabricating method
US11917835B2 (en) Three-dimensional funnel-like spin transfer torque MRAM cell with a non-uniform thicknesses in each layer
KR102589614B1 (en) Magnetic memory device fabrication method using Ru and diamond-like carbon hard masks
US20220238601A1 (en) Magnetic tunnel junction element with ru hard mask for use in magnetic random-access memory
US20190392879A1 (en) MAGNETIC MEMORY ELEMENT HAVING MgO ISOLATION LAYER
US20120068283A1 (en) Semiconductor storage device and method of manufacturing the same
US20240188447A1 (en) Memory structure with non-ion beam etched mtj and top electrode
KR20230034788A (en) Magnetic device
CN112951982A (en) Semiconductor structure and forming method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18889480

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18889480

Country of ref document: EP

Kind code of ref document: A1