WO2019104623A1 - 光学分波装置及其制造方法 - Google Patents

光学分波装置及其制造方法 Download PDF

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Publication number
WO2019104623A1
WO2019104623A1 PCT/CN2017/113891 CN2017113891W WO2019104623A1 WO 2019104623 A1 WO2019104623 A1 WO 2019104623A1 CN 2017113891 W CN2017113891 W CN 2017113891W WO 2019104623 A1 WO2019104623 A1 WO 2019104623A1
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Prior art keywords
substrate
grating
unit
demultiplexing device
light source
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PCT/CN2017/113891
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English (en)
French (fr)
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柯正浩
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柯正浩
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Priority to CN201780001815.3A priority Critical patent/CN110383128A/zh
Priority to PCT/CN2017/113891 priority patent/WO2019104623A1/zh
Publication of WO2019104623A1 publication Critical patent/WO2019104623A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method

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  • the present invention relates to an optical demultiplexing device and a method of manufacturing the same, and more particularly to an optical demultiplexing device that reduces volume and enhances spectroscopic accuracy and a method of fabricating the same.
  • LIGA Lithography, Electroplating, and Molding
  • LIGA is a micro-manufacturing program that combines lithography, electroplating and molding to make the microstructure highly accurate in manufacturing and to make the microstructure
  • the height can reach hundreds or even thousands of microns. Due to the small spacing of the grating structure, the yield and spectral accuracy of the demolding process of LIGA (Lithography, Electroplating, and Molding) is insufficient to manufacture vertical gratings.
  • One of the objects of the present invention is to disclose an optical demultiplexing device and a manufacturing method thereof for the purpose of reducing the volume and improving the spectral accuracy.
  • the present invention provides an optical demultiplexing device, wherein the optical demultiplexing device comprises:
  • the waveguide unit comprises: a first substrate; an input unit is formed on the first substrate, and has a slit for receiving an optical signal; a grating is formed On the first substrate, the optical signal can be demultiplexed to generate an output beam; and a second substrate is disposed on the input unit and the grating, and a waveguide space is formed between the first substrate and the first substrate;
  • the input unit and the grating are formed by exposing a photoresist layer by using a high-energy light source; wherein, the inverse The firing unit is disposed outside the waveguide unit for changing the exit angle of the output beam.
  • the grating has a concave, convex or planar profile, and its surface exhibits a continuous sheet, zigzag, flame, sinusoidal or combination of the above.
  • the first substrate and the second substrate are any one of a semiconductor substrate, a glass substrate, a metal substrate or a plastic substrate.
  • the high energy light source is any one of X-ray, soft X-ray or ultra-ultraviolet light.
  • a method of fabricating an optical demultiplexing device comprising the steps of: providing a first substrate; forming a photoresist layer on the first substrate; utilizing a high-energy light source exposing the photoresist layer, and the high-energy light source has a wavelength ranging from 0.01 nm to 100 nm; developing the photoresist layer to form an input unit having a slit And a grating; a second substrate is overlaid on the input unit and the grating to form a waveguide unit; and a reflective unit is disposed outside the waveguide unit.
  • the photoresist layer has a thickness of between 10 microns and 1000 microns.
  • the high-energy light source mask includes a third substrate, a metal layer formed on the third substrate, a plurality of metal patterns formed on the metal layer, and a third substrate formed on the third substrate The silicon layer on the bottom.
  • the third substrate of the high-energy light source mask is made of silicon nitride (Si 3 N 4 ) or silicon carbide (SiC), and the thickness of the third substrate is between 1 micrometer and 5 Between microns.
  • the metal layer is a titanium layer having a thickness between 10 nm and 200 nm, and the plurality of metal patterns are each a gold having a thickness between 1 ⁇ m and 10 ⁇ m. pattern.
  • the first substrate, the second substrate, the input unit and the grating surface are plated with a highly reflective coating.
  • Figure 1 (a) is a schematic illustration of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • Figure 1 (b) is an exploded view of the optical demultiplexing device in accordance with the above preferred embodiment of the present invention.
  • Figure 1 (c) is a schematic view of the optical demultiplexing device according to the above preferred embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a manufacturing process of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a manufacturing process of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a manufacturing process of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • Figure 5 is a schematic illustration of the manufacturing process of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • Figure 6 is a schematic illustration of the manufacturing process of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • Figure 7 is a schematic illustration of the manufacturing process of an optical demultiplexing device in accordance with a preferred embodiment of the present invention.
  • the term “a” is understood to mean “at least one” or “one or more”, that is, in one embodiment, the number of one element may be one, and in other embodiments, the element The number can be multiple, and the term “a” cannot be construed as limiting the quantity.
  • the optical demultiplexing device 10 of the present invention is mainly composed of a waveguide unit 11 and A reflection unit 12 is composed.
  • the waveguide unit has a first substrate 111, an input unit 112, a grating 113, and a second substrate (shown in FIG. 1(b)).
  • the input unit 112 is formed on the first substrate 111 and receives an optical signal through the slit 114, and the slit 114 has a width of between 5 micrometers ( ⁇ m) and 500 micrometers.
  • the grating 113 is formed on the first substrate 111, and can generate one of the first beams according to the optical signal.
  • the grating 113 has a concave, convex or planar profile and its surface exhibits a continuous lamella, zigzag, flame, sinusoidal or combination of the above. In general, the grating 113 is used to increase the diffraction efficiency of a particular diffraction level, and the most suitable optical signal wavelength is between about 200 nanometers (nm) and 2000 nanometers.
  • the reflecting unit 12 is configured to output the first light beam (defocused focus beam) from the grating 113 and to change an exit angle of the first light beam.
  • the image sensor 151 (icon as shown in FIG. 1(b)) is configured to receive the first light beam from the reflection unit 12 for subsequent processing.
  • the second substrate 117 is covered on the input unit 112 and the grating 113. Therefore, the space between the first substrate 111 and the second substrate 117 can be regarded as a waveguide unit 11 for receiving and transmitting. Optical signal.
  • the input unit 112 and the grating 113 are formed by exposing a photoresist layer via a high-energy light source.
  • the high energy light source is any one of X-ray, soft X-ray or ultra-ultraviolet light.
  • the X-ray has a wavelength of 0.01 nm to 1 nm; the soft X-ray has a wavelength of 0.1 nm to 10 nm; and the ultra-ultraviolet light has a wavelength of 10 nm to 120 nm.
  • the first substrate 111 and the second substrate 117 are any one of a semiconductor substrate, a glass substrate, a metal substrate, or a plastic substrate.
  • the wavelength of the high-energy light source is between 0.1 nm and 1 nm, which is more suitable than 1 nm to 100 nm. .
  • the spacing between adjacent peaks on the surface of the grating 113 is approximately 3 microns and the surface roughness is approximately 5 nm to 10 nm. Therefore, the grating 113 can be applied to the field of optical communication or telecommunications in the field of regional optical communication.
  • the reflective unit 12 is integrally formed on the first substrate by tilting an angle, in the current semiconductor manufacturing technology, the reflective surface of the reflective unit 12 is rotated and exposed. Too rough and not suitable for use with optical systems. Therefore, in the embodiment of the present invention, the reflective unit 12 is fabricated through another semiconductor process and then disposed outside the waveguide unit 11 to increase the spectral accuracy.
  • the image sensor 151 can be placed in any direction and position of the optical demultiplexing device 10 according to the needs of the user (especially Refer to the top or bottom) to reduce the overall volume.
  • the optical demultiplexing device 10 of the present invention further comprises an outer casing 13 and a cover 14 for covering the waveguide unit 11 and the reflecting unit 12, and is protected by the outer casing 13 and the cover 14. Avoid The waveguide-free unit 11 and the reflection unit 12 are directly in contact with an external force to ensure the stability of the overall structure.
  • the optical signal enters the waveguide unit 11 through the slit 114 through the input unit 16 (usually a fiber optic cable), the flow of the splitting is developed.
  • the cover plate 14 is provided with an opening 141 corresponding to the reflecting unit 12 to facilitate the output of the first light beam.
  • the cover 14 is disposed with a circuit carrier 15
  • the image sensor 151 is disposed on the circuit carrier 15 corresponding to the position of the opening 141 for receiving the first light beam. Subsequent analysis is used.
  • the image sensor 151 is combined with the optical demultiplexing device 10 of the present invention, which greatly reduces the volume of the entire system.
  • FIGS. 2 to 7 are schematic views showing the manufacturing process of the optical demultiplexing device of the present invention.
  • a first substrate 111 is provided and formed on the first substrate 111.
  • a photoresist layer 115 having a thickness of from 10 micrometers to 1000 micrometers. Some of the components in the optical demultiplexing device 10 will be formed through the photoresist layer 115.
  • the material of the photoresist layer 115 is SU-8 or PMMA (polymethyl methacrylate).
  • the high-energy light source mask 20 includes a third substrate 201 made of silicon nitride (Si3N4) or silicon carbide (SiC) and having a thickness of between 1 micrometer and 5 micrometers.
  • the high-energy light source mask 20 further includes a titanium layer 204 (metal layer) formed on the third substrate 201 and having a thickness of 10 nm to 200 nm, and a plurality of gold patterns formed on the titanium layer 204.
  • a portion of the high-energy light source 30 will be shielded by a plurality of gold patterns 203 having a thickness of between 1 micrometer and 10 micrometers, and the gold pattern 203 on the high-energy source mask 20 will be transferred by exposure of the high-energy light source.
  • the photoresist layer 115 To the photoresist layer 115.
  • the input unit 112 and the grating 113 may be hard baked at a temperature of 100 ° C to 200 ° C.
  • the surface of the first substrate 111, the input unit 112 and the grating 113 may be increased.
  • a second substrate 117 having a surface on which the highly reflective plating layer (gold or aluminum) 116 is plated is overlaid on the input unit 112 and the grating 113. Therefore, in FIG. 7, the first substrate 111 and the second The space between the substrates 117 can be regarded as a waveguide space. Finally, a reflection unit 12 is disposed outside the waveguide unit 11 for changing the first beam output angle from the grating 113.
  • first connecting units are formed on the first substrate 111 as a bridge combined with the second substrate 117.
  • the structural stability of the optical demultiplexing device is enhanced by the combination of the plurality of first connecting units (not shown).

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Integrated Circuits (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

一种光学分波装置(10)及其制造方法，其中光学分波装置(10)包括一波导单元(11)与一反射单元(12)，波导单元(11)系具有一第一基板(111)、一输入单元(112)、一光栅(113)以及一第二基板(117)，输入单元(112)形成于第一基板(111)上，并具有一狭缝(114)以接收一光学讯号；光栅(113)形成于第一基板(111)上，可对光学讯号分波后产生一输出光束；第二基板(117)系配置于输入单元(112)与光栅(113)上，其与第一基板(111)之间形成一波导空间，反射单元(12)则配置于波导单元(11)外部，用以改变输出光束的出射角度。

Description

光学分波装置及其制造方法 技术领域
本发明涉及光学分波装置及其制造方法，尤指一缩小体积与提升分光精确度光学分波装置及其制造方法。
背景技术
传统的光谱仪通常是采用棱镜、光栅或干涉组件等分光器以实现色散效果，但必须在整体体积与光谱解析能力之间互相妥协。因此，传统的高分辨率光谱仪因为其光学系统庞大、复杂而较为昂贵。
为求缩小光谱仪之体积，LIGA(Lithography,Electroplating,and Molding)，乃一种结合微影、电镀以及制模的微制造程序，可令微结构于制造时具有高精确度，并令微结构的高度可达到数百甚至数千微米的厚度。由于光栅结构具有小间距的原因，故LIGA(Lithography,Electroplating,and Molding)的脱模过程良率与分光精确度是不足以满足制造垂直光栅的。
因此，如何实现可缩小体积与提升分光精确度之光学分波装置，实为一具有意义的思考方向。
发明内容
本发明的目的之一在于揭露一光学分波装置及其制造方法，用以达到缩小体积与提升分光精确度之目的。
为了实现上述发明目的，本发明提供了一种光学分波装置，其中所述光学分波装置包括：
一波导单元和一反射单元，其中该波导单元包括：一第一基板；一输入单元，系形成于该第一基板上，并具有一狭缝，用以接收一光学讯号；一光栅，系形成于该第一基板上，可对该光学讯号分波后产生一输出光束；以及一第二基板，系配置于该输入单元与该光栅上，其与该第一基板之间形成一波导空间；其中，该输入单元以及该光栅系利用高能量光源对一光阻层进行曝光所形成；其中，该反 射单元则配置于该波导单元外部，用以改变该输出光束的出射角度。
根据本发明的一个实施例，该光栅具有凹面、凸面或平面的轮廓，且其表面呈现连续薄片态样、锯齿态样、火焰态样、正弦曲线态样或上述之组合态样。
根据本发明的一个实施例，该第一基板与该第二基板系为半导体基板、玻璃基板、金属基板或塑料基板中之任一者。
根据本发明的一个实施例，该高能量光源系为X光、软X光或超紫外光中之任一者。
为了实现上述发明目的，根据本发明的另一方面，提供了一种光学分波装置制造方法，该方法包含下列步骤：提供一第一基板；于该第一基板上形成一光阻层；利用一高能量光源对该光阻层进行曝光，且该高能量光源之波长范围介于系0.01奈米至100奈米之间；对该光阻层显影，以形成一具有一狭缝之输入单元与一光栅；将一第二基板覆盖于该输入单元与该光栅上，以形成一波导单元；以及将一反射单元配置于该波导单元外部。
根据本发明的一个实施例，该光阻层的厚度介于10微米至1000微米之间。
根据本发明的一个实施例，该高能量光源光罩包含一第三基板、一形成于该第三基板上之金属层、复数形成于该金属层上方之金属图样以及一形成于该第三基板底面之硅层。
根据本发明的一个实施例，该高能量光源光罩之该第三基板材质为氮化硅(Si3N4)或碳化硅(SiC)，且该第三基板之厚度介于1微米至5微米之间。
根据本发明的一个实施例，该金属层系为一厚度介于10奈米至200奈米之间的钛层，且该复数金属图样均为一厚度介于1微米至10微米之间的金图样。
根据本发明的一个实施例，更包含于该第一基板、该第二基板、该输入单元与该光栅表面镀上一高反射镀层的步骤。
附图说明
图1(a)是根据本发明的一较佳实施例的一光学分波装置的示意图。
图1(b)是根据本发明的上述较佳实施例的所述光学分波装置的爆炸图。
图1(c)是根据本发明的上述较佳实施的所述光学分波装置的示意图。
图2是根据本发明的一较佳实施例的一光学分波装置的制造过程示意图。
图3是根据本发明的一较佳实施例的一光学分波装置的制造过程示意图。
图4是根据本发明的一较佳实施例的一光学分波装置的制造过程示意图。
图5是根据本发明的一较佳实施例的一光学分波装置的制造过程示意图。
图6是根据本发明的一较佳实施例的一光学分波装置的制造过程示意图。
图7是根据本发明的一较佳实施例的一光学分波装置的制造过程示意图。
具体实施方式
以下描述用于揭露本发明以使本领域技术人员能够实现本发明。以下描述中的优选实施例只作为举例，本领域技术人员可以想到其他显而易见的变型。在以下描述中界定的本发明的基本原理可以应用于其他实施方案、变形方案、改进方案、等同方案以及没有背离本发明的精神和范围的其他技术方案。
本领域技术人员应理解的是，在本发明的揭露中，术语“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系是基于附图所示的方位或位置关系，其仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此上述术语不能理解为对本发明的限制。
可以理解的是，术语“一”应理解为“至少一”或“一个或多个”，即在一个实施例中，一个元件的数量可以为一个，而在另外的实施例中，该元件的数量可以为多个，术语“一”不能理解为对数量的限制。
在说明书及后续的申请专利范围当中使用了某些词汇来指称特定的组件。所属领域中具有通常知识者应可理解，硬件制造商可能会用不同的名词来称呼同一个组件。本说明书及后续的申请专利范围并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的准则。在通篇说明书及后续的请求项当中所提及的「包含」系为一开放式的用语，故应解释成「包含但不限定于」。
附图1(a)-1(c)是根据本发明的一较佳实施例的一光学分波装置的示意图，如图所示：本发明之光学分波装置10主要由一波导单元11与一反射单元12所组成。该波导单元系具有一第一基板111、一输入单元112、一光栅113以及一第二基板(示于第1(b)图)。该输入单元112成于该第一基板111上，并可经由该狭缝114接收一光学讯号，且该狭缝114的宽度介于5微米(μm)至500微米之间。该光栅113形成于该第一基板111上，可根据该光学讯号产生输出之一第一光束 (散焦聚焦光束)，即为进行分光，并将其射入配置于波导单元11外部之反射单元12。该光栅113具有凹面、凸面或平面的轮廓，且其表面呈现连续薄片态样、锯齿态样、火焰态样、正弦曲线态样或上述之组合态样。一般来说，光栅113系用来增加特定绕射层级的绕射效率，最适当的光学讯号波长大约介于200奈米(nm)至2000奈米之间。该反射单元12系用以输出来自该光栅113的该第一光束(散焦聚焦光束)，并可改变该第一光束的出射角度。
影像传感器151(图标如第1(b))则用以接收来自于该反射单元12的该第一光束，以进行后续处理。其中该第二基板117系覆盖于该输入单元112以及该光栅113上，因此，该第一基板111与该第二基板117之间的空间即可视为一波导单元11，用以接收与传送光学讯号。
此外，该输入单元112与该光栅113系经由一高能量光源对一光阻层曝光而形成的。该高能量光源系为X光、软X光或超紫外光中之任一者。X光的波长为0.01奈米至1奈米；软X光的波长为0.1奈米至10奈米；超紫外光的波长则为10奈米至120奈米。该第一基板111与该第二基板117系为半导体基板、玻璃基板、金属基板或塑料基板中之任一者。再者，于光学电信以区域光学通讯领域中，会因为表面粗糙度限制的关系，故该高能量光源的波长介于0.1奈米至1奈米会比1奈米至100奈米来的恰当。
经过高能量光源曝光之后，光栅113表面各邻接波峰之间的间距大约为3微米，且其表面粗糙度大约为5奈米至10奈米。因此，该光栅113即可适用于光学或电信以区域光学通讯领域之中。
进一步地，若该反射单元12系已倾斜一角度的方式而一体成型于该第一基板上时，以现今半导体制程技术来说，该反射单元12之反射面表面就会因为旋转曝光的关系而过于粗糙，不符合光学系统使用。因此本案实施例将该反射单元12系透过另外的半导体制程制作后再配置于波导单元11外部，以增加分光精确度。
接续上述实施例由于反射单元12系用以改变来自于光栅113的第一光束输出角度，故影像传感器151就能根据使用者的需求而放置于该光学分波装置10的任何方向与位置(尤指上方或下方)，以缩小整体的体积。
本发明之光学分波装置10更包含利用一外壳体13与一盖板14将该波导单元11与该反射单元12包覆于内的架构，透过外壳体13与盖板14的保护，可避 免波导单元11与该反射单元12直接与外力接触，确保整体结构的稳固性。当光学讯号透过输入单元16(通常为光纤缆线)经由狭缝114进入波导单元11内时，即展开分光的流程。
此外，由于反射单元12改变了第一光束的出射角度，故该盖板14系对应该反射单元12而配置有一开口141，以利该第一光束的输出。以本发明的实施例来说，该盖板14上配置有一电路载板15，而影像传感器151则对应开口141的位置而配置于该电路载板15上，用以接收该第一光束，以利后续的分析使用。如此将影像传感器151与本发明之光学分波装置10结合，更大幅缩小了整个系统的体积。
第2图至第7图为本发明光学分波装置之制造过程示意图，如图所示：为制造光学分波装置，首先，会提供一第一基板111，并于该第一基板111上形成一厚度为10微米至1000微米的光阻层115。该光学分波装置10中的部份组件都将透过该光阻层115来形成。该光阻层115的材质为SU-8或PMMA(聚甲基丙烯酸甲酯)。随后，该光阻层115就会被一高能量光源30(如X光、软X光或超紫外光等)透过一高能量光源光罩20进行曝光。该高能量光源光罩20包含一第三基板201，其材质为氮化硅(Si3N4)或碳化硅(SiC)，且其厚度介于1微米至5微米之间。该高能量光源光罩20更包含一形成于该第三基板201上且厚度介于10奈米至200奈米之钛层204(金属层)、一形成于该钛层204上之复数金图样203(金属图样)以及一形成于该第三基板201底面之硅层202。部份的高能量光源30将被厚度介于1微米至10微米的复数金图样203遮蔽，且该高能量光源光罩20上之该金图样203会藉由该高能量光源的曝光后，转移到该光阻层115上。
举例来说，经过该高能量光源曝光之后，光阻层115上经过该高能量光源曝光的区域就会进行显影。经过显影之后，光阻层115上经过曝光的区域就会形成具有狭缝的输入单元112以及光栅113。此外，为增加输入单元112与光栅113，可于100℃至200℃的温度下，对输入单元112与光栅113进行硬烤。
为加强包含该第一基板111、该输入单元112与该光栅113之波导单元11的反射率，故可增加于该第一基板111、该输入单元112与该光栅113的表面，镀上一高反射镀层(金或铝)116的步骤。
最后，再将该一表面镀有该高反射镀层(金或铝)116的第二基板117覆盖于该输入单元112与该光栅113上。因此，于第7图中，该第一基板111与该第二 基板117之间的空间就可视为一波导空间。最后，再将一反射单元12配置于该波导单元11外部，用以改变来自于光栅113的第一光束输出角度。
进一步地，复数第一连接单元(图未示)系形成为该第一基板111上，以做为与该第二基板117结合的桥梁。透过该复数第一连接单元(图未示)的结合，该光学分波装置的结构稳固性就会因此而增强。
在详细说明上述本发明的各项较佳实施例之后，熟悉该项技术人士可清楚的了解，在不脱离下述申请专利范围与精神下可进行各种变化与改变，如限位单元的各种实施态样等等，亦不受限于说明书之实施例的实施方式。
本领域的技术人员可以理解的是，以上实施例仅为举例，其中不同实施例的特征可以相互组合，以得到根据本发明揭露的内容很容易想到但是在附图中没有明确指出的实施方式。
本领域的技术人员应理解，上述描述及附图中所示的本发明的实施例只作为举例而并不限制本发明。本发明的目的已经完整并有效地实现。本发明的功能及结构原理已在实施例中展示和说明，在没有背离所述原理下，本发明的实施方式可以有任何变形或修改。

Claims (10)

  1. 一种光学分波装置，其特征在于，包含：
    一波导单元，其中所述波导单元包括：
    一第一基板；
    一输入单元，系形成于该第一基板上，并具有一狭缝，用以接收一光学讯号；
    一光栅，系形成于该第一基板上，可对该光学讯号分波后产生一输出光束；以及
    一第二基板，系配置于该输入单元与该光栅上，其与该第一基板之间形成一波导空间；其中，该输入单元以及该光栅系利用高能量光源对一光阻层进行曝光所形成，且该高能量光源的波长范围介于系0.01奈米至100奈米之间；和
    一反射单元，系配置于该波导单元外部，用以改变该输出光束的出射角度。
  2. 根据权利要求1所述的光学分波装置，其中该光栅具有凹面、凸面或平面的轮廓，且其表面呈现连续薄片态样、锯齿态样、火焰态样、正弦曲线态样或上述之组合态样。
  3. 根据权利要求1所述的光学分波装置，其中该第一基板与该第二基板系为半导体基板、玻璃基板、金属基板或塑料基板中之任一者。
  4. 根据权利要求1所述的光学分波装置，其中该高能量光源系为X光、软X光或超紫外光中之任一者。
  5. 一种光学分波装置制造方法，其特征在于，该方法包含下列步骤：
    提供一第一基板；
    于该第一基板上形成一光阻层；
    利用一高能量光源透过一高能量光罩对该光阻层进行曝光，且该高能量光源之波长范围介于系0.01奈米至100奈米之间；
    对该光阻层显影，以形成一具有一狭缝之输入单元与一光栅；
    将一第二基板覆盖于该输入单元与该光栅上，以形成一波导单元；以及
    将一反射单元配置于该波导单元外部，用以改变来自于该光栅之一输出光束的出射角度。
  6. 根据权利要求5所述的光学分波装置制造方法，其中该光阻层的厚度介于10微米至1000微米之间。
  7. 根据权利要求5所述的光学分波装置制造方法，其中该高能量光源光罩包含一第三基板、一形成于该第三基板上之金属层、复数形成于该金属层上方之金属图样以及一形成于该第三基板底面之硅层。
  8. 根据权利要求7所述的光学分波装置制造方法，其中该高能量光源光罩之该第三基板材质为氮化硅(Si3N4)或碳化硅(SiC)，且该第三基板之厚度介于1微米至5微米之间。
  9. 根据权利要求7所述的光学分波装置制造方法，其中该金属层系为一厚度介于10奈米至200奈米之间的钛层，且该复数金属图样均为一厚度介于1微米至10微米之间的金图样。
  10. 根据权利要求5所述的光学分波装置制造方法，更包含于该第一基板、该第二基板、该输入单元与该光栅表面镀上一高反射镀层的步骤。
PCT/CN2017/113891 2017-11-30 2017-11-30 光学分波装置及其制造方法 WO2019104623A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784935A (en) * 1986-04-04 1988-11-15 Kernforschungszentrum Karlsruhe Gmbh Method of producing a passive optical device including at least one reflection grating
US20070086703A1 (en) * 2005-10-19 2007-04-19 Mcgill University Integrated etched multilayer grating based wavelength demultiplexer
CN101295050A (zh) * 2007-04-27 2008-10-29 柯正浩 光学系统
CN103185908A (zh) * 2011-12-30 2013-07-03 台湾超微光学股份有限公司 混合式绕射光栅、模具及绕射光栅及其模具的制造方法
CN103459995A (zh) * 2011-11-08 2013-12-18 柯正浩 光学波长分光装置及其制造方法
CN103782208A (zh) * 2011-11-25 2014-05-07 柯正浩 光学波长分光装置及其制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784935A (en) * 1986-04-04 1988-11-15 Kernforschungszentrum Karlsruhe Gmbh Method of producing a passive optical device including at least one reflection grating
US20070086703A1 (en) * 2005-10-19 2007-04-19 Mcgill University Integrated etched multilayer grating based wavelength demultiplexer
CN101295050A (zh) * 2007-04-27 2008-10-29 柯正浩 光学系统
CN103459995A (zh) * 2011-11-08 2013-12-18 柯正浩 光学波长分光装置及其制造方法
CN103782208A (zh) * 2011-11-25 2014-05-07 柯正浩 光学波长分光装置及其制造方法
CN103185908A (zh) * 2011-12-30 2013-07-03 台湾超微光学股份有限公司 混合式绕射光栅、模具及绕射光栅及其模具的制造方法

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