WO2019103237A1

WO2019103237A1 - Ultrasonic sensor, method for manufacturing ultrasonic sensor, and security system

Info

Publication number: WO2019103237A1
Application number: PCT/KR2017/015467
Authority: WO
Inventors: 최홍수; 이경택; 강우진; 신은정; 이원준; 정준택
Original assignee: 재단법인대구경북과학기술원
Priority date: 2017-11-27
Filing date: 2017-12-26
Publication date: 2019-05-31
Also published as: KR101907324B1

Abstract

An ultrasonic sensor according to an embodiment comprises: a first ultrasonic wave generation unit arranged in a flat form; and a second ultrasonic wave generation unit arranged in a dome form, wherein the first ultrasonic wave generation unit can generate a first ultrasonic wave in a plane wave form toward a first measurement target, and the second ultrasonic generation unit can generate a second ultrasonic wave, focused toward a second measurement target spaced apart from the first measurement target.

Description

Ultrasonic sensor, method of manufacturing ultrasonic sensor and security system

The present invention relates to an ultrasonic sensor, a method of manufacturing an ultrasonic sensor, and a security system, and more particularly, to an ultrasonic sensor capable of recognizing a fingerprint and a finger vein, a manufacturing method of the ultrasonic sensor, and a security system.

Generally, in buildings such as various facilities and companies, it controls the access of outsiders for security reasons and safety reasons. It is required to authenticate the identity of the person as card authentication means such as magnetic card, smart card and RF card. do.

However, the card-type authentication means has a risk of theft and loss, and in the case where the number of people who have been granted permission to access the card is large, the number of cards to be paid becomes large.

Therefore, in order to solve the above-mentioned problem, a biometric identification system capable of identifying an individual using physical characteristics of a person is being commercialized.

For example, a method of recognizing a fingerprint has been proposed in which a finger is fixed, a method of scanning a fingerprint while the ultrasonic sensor moves, and a method of scanning a fingerprint by moving a finger on the sensor when an ultrasonic wave is generated in the ultrasonic generator.

US 7739912 discloses a sensor for recognizing a fingerprint using ultrasonic waves.

However, since fingerprint duplication is possible in recent fingerprint recognition sensors, there is a growing concern about security, and it is necessary to develop a sensor having enhanced security.

An object of the present invention is to provide an ultrasonic sensor capable of simultaneously recognizing a fingerprint and a finger vein, a method of manufacturing the ultrasonic sensor, and a security system.

An object of the present invention is to provide an ultrasonic sensor, a method of manufacturing an ultrasonic sensor, and a security system capable of generating strong ultrasonic waves with respect to a fingertip in a finger by an ultrasonic generator provided in a dome shape.

An object of the present invention is to provide an ultrasonic sensor, a method of manufacturing an ultrasonic sensor, and a security system capable of detecting a finger vein position according to a fingerprint pattern as well as a pattern of a finger vein.

An object according to an embodiment is to provide a security system in which authentication of a fingerprint and a fingerprint is performed simultaneously after two pieces of information have all been recognized, thereby enhancing security.

According to an embodiment of the present invention, there is provided a security system in which authentication of a fingerprint stored in an authentication unit and authentication of a fingerprint according to a position of a fingerprint analyzed by the authentication unit coincide with each other, .

According to an aspect of the present invention, there is provided an ultrasonic sensor including: a first ultrasonic generator provided in a planar shape; Wherein the first ultrasonic wave generator generates a first ultrasonic wave in the form of a plane wave toward the first measurement object and the second ultrasonic wave generator generates a first ultrasonic wave in a form of a plane wave from the first measurement object, The second ultrasonic wave can be generated in such a manner that the second ultrasonic waves are focused toward the arranged second measurement object.

According to one aspect of the present invention, the first measurement object is a fingerprint disposed on the finger surface, and the second measurement object may be a finger vein disposed inside the finger.

According to one aspect of the present invention, the second ultrasonic wave generator is concave toward the second measurement object, and the first ultrasonic wave generator is disposed to be flush with the upper end of the second ultrasonic wave generator.

According to one aspect of the present invention, the first ultrasonic generator and the second ultrasonic generator are arranged in an array, and the first ultrasonic generator and the second ultrasonic generator are alternately arranged.

According to one aspect of the present invention, the first ultrasonic generator and the second ultrasonic generator are operated individually, so that the first ultrasonic wave and the second ultrasonic wave can be generated sequentially or simultaneously.

According to an aspect of the present invention, there is provided a method of manufacturing an ultrasonic sensor, including: providing a substrate including a dome-shaped region and a planar-shaped region; And forming the ultrasonic wave generators in the dome shape area and the planar shape area, respectively, wherein the ultrasonic wave generator is formed in the dome shape area and the planar shape area at the same time.

According to one aspect, the step of providing a substrate comprising the dome-shaped region and the planar-shaped region comprises: providing a substrate; Depositing silicon nitride on the surface of the substrate; Etching the silicon nitride in a circular shape; And etching the substrate.

According to one aspect, in the step of etching the substrate, the dome-shaped region is formed on the upper surface of the substrate, the planar region is defined on the upper surface of the substrate so as to be spaced apart from the dome- Is formed under the silicon nitride etched in the circular shape, and the upper diameter of the dome-shaped region may be formed to be larger than the etching diameter of the silicon nitride.

According to one aspect, the step of providing a substrate comprising the dome-shaped region and the planar-shaped region comprises: after the step of etching the substrate, removing silicon nitride from the substrate; And depositing silicon oxide on the surface of the substrate.

According to one aspect of the present invention, the step of forming the ultrasonic wave generators in the dome shape area and the planar shape area, respectively, comprises: patterning the lead in an electrode shape in the dome shape area and the planar shape area; Patterning the piezoelectric material on the lead in the form of a membrane; Heat treating the substrate; And patterning the gold on the piezoelectric material in the form of an electrode.

According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming an ultrasonic wave generating part in each of the dome shape area and the planar shape area; Forming an aluminum pattern on a lower surface of the substrate; Etching the lower surface of the substrate; And removing the photoresist deposited on the upper surface of the substrate.

According to one aspect of the present invention, the step of forming the aluminum pattern on the lower surface of the substrate includes: depositing aluminum on the lower surface of the substrate; And etching the aluminum to correspond to the planar region and the dome region, wherein in etching the lower surface of the substrate, the etch depth in the planar region is deeper than the dome region of the substrate .

According to an aspect of the present invention, there is provided a security system comprising: a fingerprint recognition unit for generating a first ultrasonic wave to recognize a fingerprint; A finger vein recognizing unit for recognizing a finger vein by generating a second ultrasonic wave; And an authenticator for performing authentication of the user in consideration of the fingerprint recognized by the fingerprint recognition unit and the finger vein recognized by the finger vein recognition unit, wherein the fingerprint recognition unit generates a first ultrasonic wave in the form of a plane wave toward the fingerprint And the finger vein recognition unit may be provided in a dome shape to generate a second ultrasonic wave in such a manner that the finger is converged toward the finger vein.

According to one aspect of the present invention, after the fingerprint recognized by the fingerprint recognition unit and the finger vein recognized by the finger vein recognition unit are synchronized to analyze the position and pattern of the finger vein according to the position of the fingerprint, It is possible to determine whether or not the position and pattern of the finger vein according to the authentication information match the information about the finger vein previously stored in the authentication unit.

According to one aspect of the present invention, the authentication unit determines whether the fingerprint recognized by the fingerprint recognition unit and the fingerprint recognized by the fingerprint recognition unit, the fingerprint previously stored in the authentication unit, and the fingerprint information match .

According to the ultrasonic sensor, the method of manufacturing the ultrasonic sensor, and the security system according to the embodiment, the fingerprint and the finger vein can be simultaneously recognized.

According to the ultrasonic sensor, the method of manufacturing the ultrasonic sensor, and the security system according to the embodiment, strong ultrasonic waves can be generated with respect to the fingers inside the finger by the ultrasonic generator provided in the form of a dome.

According to the ultrasonic sensor, the manufacturing method and the security system of the ultrasonic sensor according to the embodiment, it is possible to detect not only the pattern of the finger vein but also the position of the finger vein according to the fingerprint position.

According to the security system according to the embodiment, after both the fingerprint and the fingerprint are recognized, both pieces of information must be matched so that authentication of the user is performed and security can be enhanced.

According to the security system of the embodiment, when the information about the finger vein previously stored in the authentication unit matches the position and the pattern of the finger finger according to the position of the fingerprint analyzed by the authentication unit, the authentication is performed and the security can be enhanced have.

1 shows an ultrasonic sensor according to an embodiment.

2 is a flowchart illustrating a method of manufacturing an ultrasonic sensor according to an embodiment of the present invention.

3A to 3N show a manufacturing process of an ultrasonic sensor according to an embodiment.

4 shows a configuration of a security system according to an embodiment.

Hereinafter, embodiments will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments, detailed description of known functions and configurations incorporated herein will be omitted when it may make the best of an understanding clear.

In describing the components of the embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be " connected, " " coupled, " or " connected. &Quot;

The components included in any one embodiment and the components including common functions will be described using the same names in other embodiments. Unless otherwise stated, the description of any one embodiment may be applied to other embodiments, and a detailed description thereof will be omitted in the overlapping scope.

1 shows an ultrasonic sensor according to an embodiment.

Referring to FIG. 1, the ultrasonic sensor 10 may include a first ultrasonic generator 100 and a second ultrasonic generator 110.

The first ultrasonic generator 100 may include planar micromachined ultrasonic transducers (pMUTs).

At this time, the first ultrasonic generator 100 may be disposed to face the first measurement object, and may generate a first ultrasonic wave A1 in the form of a plane wave toward the first measurement object.

For example, the first measurement object may be a fingerprint (FP) disposed on the surface of the finger, and the first ultrasonic wave A1 in the form of a plane wave generated by the first ultrasonic wave generator 100 may be directed toward the fingerprint FP Can be propagated. The first ultrasonic wave A1 that has reached the fingerprint FP is reflected from the fingerprint FP and the reflected first ultrasonic signal can be detected by the ultrasonic wave detecting unit (not shown) to recognize the pattern of the fingerprint FP.

The second ultrasonic generator 110 may be disposed adjacent to the first ultrasonic generator 100 described above.

For example, the first and second

ultrasonic generators

100 and 110 may be connected to each other or may be spaced apart from each other.

Specifically, when the first ultrasonic generator 100 and the second ultrasonic generator 110 are configured in the form of an array, the first and second

ultrasonic generators

100 and 110 are alternately arranged . The upper end of the second ultrasonic wave generator 110 may be connected to the first ultrasonic wave generator 100 so that the upper end of the second ultrasonic wave generator 110 is flush with the first ultrasonic wave generator 100.

The second ultrasonic wave generator 110 may include a pMUT (Piezoelectric Micromachined Ultrasonic Transducers) in the form of a dome.

At this time, the second ultrasonic wave generator 110 is arranged to face the second measurement object placed apart from the first measurement object, concave toward the second measurement object and focused on the second measurement object, The ultrasonic waves A2 can be generated.

The second ultrasonic wave A2 generated by the second ultrasonic wave generator 110 is stronger than the first ultrasonic wave A1 generated by the first ultrasonic wave generator 100 intensity.

For example, the second measurement object may be a finger vein (FV) disposed inside the finger, and the second ultrasonic waves A2, which are generated by the second ultrasonic generator 110, ). &Lt; / RTI > The second ultrasonic wave A2 that has reached the vein FV is reflected from the vein FV and the reflected second ultrasonic signal is detected by an ultrasonic wave detecting unit (not shown) to recognize the pattern of the vein FV .

As described above, the second ultrasonic wave A2 generated by the second ultrasonic wave generator 110 has a strong intensity and is focused so that the finger vein (FV) disposed inside the finger can be effectively recognized .

Meanwhile, the first ultrasonic generator 100 and the second ultrasonic generator 110 may be operated individually. Specifically, the first ultrasonic wave generator 100 and the second ultrasonic wave generator 110 are sequentially or simultaneously operated so that the first ultrasonic wave A1 and the second ultrasonic wave A2 sequentially or simultaneously Lt; / RTI > Accordingly, the ultrasonic sensor 10 according to an embodiment can perform fingerprint recognition and fingerprint recognition sequentially or simultaneously.

When a plurality of first ultrasonic wave generators 100 and a plurality of second ultrasonic wave generators 110 are included, a part of the plurality of first ultrasonic wave generators 100 is operated, Some of the plurality of second ultrasonic generators 110 may be in operation and the rest of the plurality of second ultrasonic generators 110 may not be operated.

In this case, necessary information can be obtained from the fingerprint FP and the finger vein FV of the finger by controlling the operations of the first and second

ultrasonic generators

100 and 110 individually.

Further, although not specifically shown, the ultrasonic sensor 10 according to an embodiment may further include an ultrasonic wave detecting unit (not shown). The ultrasonic wave detecting unit may be any of those capable of detecting a first ultrasonic signal reflected from the fingerprint FP and a second ultrasonic signal reflected from the finger vein FV.

The ultrasonic sensor according to one embodiment has been described, and a method of manufacturing the ultrasonic sensor according to one embodiment will be described below.

FIG. 2 is a flowchart illustrating a method of manufacturing an ultrasonic sensor according to an embodiment of the present invention. FIGS. 3A through 3N illustrate a manufacturing process of an ultrasonic sensor according to an embodiment of the present invention.

Referring to FIG. 2, an ultrasonic sensor according to an embodiment may be manufactured as follows.

First, a substrate including a dome-shaped region and a planar-shaped region is provided (S10).

Specifically, as shown in FIG. 3A, a substrate S is provided (S11).

At this time, the substrate may be provided by, for example, a 6-inch silicon wafer.

Then, silicon nitride (SN) is deposited on the surface of the substrate S as shown in FIG. 3B (S12).

For example, silicon nitride having a thickness of about 200 nm is deposited on the entire surface of the substrate using a low-pressure chemical vapor deposition (LPCVD) process.

Then, as shown in FIG. 3C, the silicon nitride (SN) is etched in a circular shape (S13).

For example, a photoresist PR is deposited on a silicon nitride (SN) by using a photolithography process and a reactive ion etching (RIE) process, and a photoresist PR is deposited on the silicon nitride (SN) The portion exposed to the outside can be etched.

At this time, the portion exposed to the outside by the pattern of the photoresist PR in the silicon nitride (SN) is a portion for forming the dome-shaped region R1 in the substrate S, that is, the dome-shaped ultrasonic generator .

Then, as shown in Fig. 3D, the substrate S is etched (S14).

Specifically, the substrate S may be etched in a dome shape formed concavely from the upper surface of the substrate S by placing the substrate S in a HFA (hydrofluoric, nitric, acetic acid) solution and reacting for about 5 minutes. Whereby the dome region R1 can be formed in a part of the substrate S. [

At this time, the dome shape region R1 is formed under the circularly etched silicon nitride (SN), and the upper diameter of the dome shape region R1 may be formed larger than the etching diameter of the silicon nitride (SN).

After the substrate S is etched, the substrate S is washed with DI-water.

Next, as shown in FIG. 3E, the silicon nitride (SN) is removed from the substrate S (S15).

Specifically, after the substrate S is put into phosphoric acid (H ₃ PO ₄ ) heated to 160 ° C. and silicon nitride (SN) is etched for about 2 hours, the substrate S is washed with DI-water.

Then, as shown in FIG. 3F, silicon oxide (SO) is deposited on the surface of the substrate S (S16).

Specifically, a silicon oxide layer having a thickness of 1 탆 is deposited on the surface of the substrate S at about 1000 캜 using a thermal oxidation process.

Thus, a dome-shaped region can be formed on the substrate, whereby a dome-shaped region on the substrate and a planar region disposed adjacent to the dome-shaped region can be defined.

Thereafter, the ultrasonic wave generators are respectively formed in the dome shape area and the planar shape area (S20).

First, as shown in FIG. 3G, lead is patterned in the form of an electrode in the dome-shaped region R1 and the planar region R2 (S21).

Specifically, a photoresist pattern is formed on the dome region R1 and the planar region R2 using a photolithography process, and a lead (Pt) film having a thickness of 200 nm is deposited thereon using a sputter process. At this time, in order to improve the adhesion of the lead (Pt) to the silicon oxide, 20 nm of titanium can be deposited, and then a lead (Pt) of 200 nm in thickness can be deposited. Then, after the lead (Pt) is deposited on the dome region R1 and the planar region R2, the lead (Pt) is patterned into an electrode form using a lift-off method using an acetone solution.

3H, a piezoelectric material (PZT) is patterned on the lead (Pt) in the form of a membrane (S22).

Specifically, as in the case of patterning lead in the form of an electrode in the dome region R1 and the planar region R2, a dome-shaped region R1 and a planar-shaped region R1 are formed by using a photo lithography, sputter, (Lead zirconate titanate) thin film of about 500 nm thickness is deposited on lead (Pt) and patterned in the form of a membrane.

Then, the substrate is heat-treated (S23).

Specifically, the substrate S shown in FIG. 3H is placed in a furnace at 650 ° C. and heat treatment is performed for about 20 minutes to form perovskite crystals having piezoelectric characteristics.

Next, as shown in FIG. 3I, gold (Au) is patterned on the piezoelectric material (PZT) in the form of an electrode (S24).

Specifically, as in the case of patterning lead in the form of an electrode in the dome region R1 and the planar region R2, a dome-shaped region R1 and a planar-shaped region R1 are formed by using a photo lithography, sputter, (Au) is patterned on the piezoelectric substance (PZT) in the form of an electrode in the electrode R2.

Thus, the ultrasonic wave generator can be simultaneously formed in the dome-shaped area and the planar area of the substrate. In other words, an ultrasonic wave generating part provided in a dome shape is formed in the dome shape area of the substrate, and an ultrasonic wave generating part provided in a plane shape in the planar shape area of the substrate can be formed.

Then, as shown in FIG. 3J, a photoresist PR is deposited on the upper surface of the substrate (S30) for the upper surface (or the front surface) of the substrate prior to the lower (or back) process of the substrate.

For example, a photoresist (PR) is coated to a thickness of 10 mu m.

Then, an aluminum pattern is formed on the lower surface of the substrate (S40).

Specifically, as shown in FIGS. 3K and 3L, aluminum (Al) is deposited on the lower surface of the substrate S (S41), and aluminum is etched to correspond to the planar region and the dome region (S42).

3K, aluminum (Al) is deposited to a thickness of 20 nm on the lower surface of the substrate S by using a sputtering process. Then, as shown in FIG. 31, a photolithography process and an RIE ion etching process is used to etch aluminum (Al) according to the size of the planar region and the dome region.

At this time, the etching width of the aluminum (Al) disposed under the dome-shaped region may be smaller than the upper diameter of the dome-shaped region, and the etching width of aluminum (Al) May be formed to be smaller than the width of the patterned lead.

Thereafter, the lower surface of the substrate is etched (S50), and the photoresist deposited on the upper surface of the substrate is removed (S60).

Specifically, as shown in FIG. 3M, the bottom surface of the substrate S is etched using a deep reactive etching (DRIE) process. At this time, the etching depth of the substrate S in the planar region can be deeper than the dome region of the substrate S. This is because the dome-shaped region of the substrate S is concave from the upper surface of the substrate S.

The ultrasonic wave generating unit and the ultrasonic wave generating unit provided in the form of a dome and a plane shape, respectively, formed in the dome-shaped region and the planar-shaped region of the substrate by the etching of the bottom surface of the substrate are realeased.

Then, as shown in FIG. 3n, the photoresist PR deposited on the upper surface of the substrate is removed using acetone, followed by washing with methanol, DI-water.

An ultrasonic sensor 10 including a first ultrasonic generator 100 and a dome-shaped ultrasonic generator, that is, a second ultrasonic generator 110, provided in a planar form, Can be produced.

In this case, the first and second

ultrasonic generators

100 and 110 may be formed in a single element at the same time in an array form. Although not shown in detail, in the method of manufacturing an ultrasonic sensor according to an embodiment It is a matter of course that a plurality of the first ultrasonic generator 100 and the second ultrasonic generator 110 can be formed in a single element at the same time.

Hereinafter, a security system according to an embodiment using an ultrasonic sensor according to an embodiment will be described.

4 shows a configuration of a security system according to an embodiment.

4, the security system 20 according to an exemplary embodiment may include a fingerprint recognition unit 200, a finger vein recognition unit 210, and an authentication unit 220.

The fingerprint recognition unit 200 can recognize a fingerprint by generating a first ultrasonic wave, and corresponds to the first ultrasonic wave generator 100 of FIG.

Specifically, the fingerprint recognition unit 200 is provided in a planar form, and can generate a first ultrasonic wave in the form of a plane wave toward the fingerprint.

The finger vein recognition unit 210 can generate a second ultrasonic wave to recognize the finger vein, and corresponds to the second ultrasonic wave generator 110 of FIG.

Specifically, the finger vein recognition unit 210 is provided in a dome shape, and can generate a second ultrasonic wave in a form that is converged toward the finger vein.

The fingerprint and finger vein information recognized by the fingerprint recognition unit 200 and the finger vein recognition unit 210 may be transmitted to the authentication unit 220. [

The authentication unit 220 can perform authentication by considering the fingerprint recognized by the fingerprint recognition unit 200 and the fingerprint recognized by the fingerprint recognition unit 210. [

Specifically, the authentication unit 220 synchronizes the fingerprint recognized by the fingerprint recognition unit 200 and the fingerprint recognized by the fingerprint recognition unit 210, and analyzes the position and pattern of the fingerprint according to the fingerprint position Next, it is possible to determine whether the position and pattern of the finger vein according to the position of the fingerprint coincide with the information about the finger vein of the individual previously stored in the authentication unit 220, thereby performing authentication.

In this way, the authentication unit 220 can further enhance security by analyzing the position and pattern of the finger veins according to the position of the fingerprint, as compared with the case of analyzing only the pattern of the finger veins.

The authentication unit 220 may further include a fingerprint recognizing unit 220 for recognizing the fingerprint recognized by the fingerprint recognizing unit 200 and the fingerprint recognized by the fingerprint recognizing unit 210 and the fingerprint and fingerprint of the individual stored in the authentication unit 220 It is of course possible to perform authentication of the user by judging whether or not they match.

At this time, if the fingerprint recognized by the fingerprint recognition unit 200 and the fingerprint recognized by the fingerprint recognition unit 210 are all the same as the fingerprint and fingerprint information of the individual stored in the authentication unit 220, It can be more secure than when it recognizes one of fingerprints and fingerprints because it can be released or unsecured.

In this manner, the security system according to the embodiment can establish a higher security system by performing authentication of the user by considering both the fingerprint recognized by the fingerprint recognition unit and the fingerprint recognized by the fingerprint recognition unit.

Although the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, And various modifications and changes may be made thereto without departing from the scope of the present invention. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the claims set forth below, fall within the scope of the present invention.

Claims

A first ultrasound generating unit provided in a planar shape; And

A second ultrasonic wave generator arranged in a dome shape;

Lt; / RTI >

Wherein the first ultrasonic wave generator generates a first ultrasonic wave in the form of a plane wave toward the first measurement object and the second ultrasonic wave generator generates a second ultrasonic wave in the form of being focused toward a second measurement object spaced apart from the first measurement object, .
The method according to claim 1,

Wherein the first measurement object is a fingerprint disposed on a finger surface, and the second measurement object is a finger disposed inside the finger.
The method according to claim 1,

Wherein the second ultrasonic wave generator is concave toward the second measurement object, and the first ultrasonic wave generator is arranged to be flush with the upper end of the second ultrasonic wave generator.
The method according to claim 1,

Wherein the first ultrasonic generator and the second ultrasonic generator are arranged in an array, and the first ultrasonic generator and the second ultrasonic generator are alternately arranged.
The method according to claim 1,

Wherein the first ultrasonic generator and the second ultrasonic generator are individually operated so that the first ultrasonic wave and the second ultrasonic wave are sequentially or simultaneously generated.
Providing a substrate comprising a dome-shaped region and a planar-shaped region; And

Forming ultrasonic wave generators in the dome shape area and the planar shape area, respectively;

Lt; / RTI >

Wherein the ultrasonic wave generator is simultaneously formed in the dome area and the planar area.
The method according to claim 6,

Wherein providing the substrate comprising the dome-shaped region and the planar-

Providing a substrate;

Depositing silicon nitride on the surface of the substrate;

Etching the silicon nitride in a circular shape; And

Etching the substrate;

Wherein the ultrasonic sensor comprises:
8. The method of claim 7,

In the step of etching the substrate,

The dome region is formed on the upper surface of the substrate,

Wherein the planar region is defined at an upper surface of the substrate so as to be spaced apart from the dome-

Wherein the dome shape region is formed underneath the silicon nitride etched in the circular shape, and the upper diameter of the dome shape region is formed larger than the etching diameter of the silicon nitride.
8. The method of claim 7,

Wherein providing the substrate comprising the dome-shaped region and the planar-

After etching the substrate,

Removing silicon nitride from the substrate; And

Depositing silicon oxide on the surface of the substrate;

Further comprising the steps of:
The method according to claim 6,

The step of forming the ultrasonic wave generators in the dome shape area and the planar shape area, respectively,

Patterning lead in the form of an electrode in the dome shape area and the planar shape area;

Patterning the piezoelectric material on the lead in the form of a membrane;

Heat treating the substrate; And

Patterning gold on the piezoelectric material in the form of an electrode;

Wherein the ultrasonic sensor comprises:
The method according to claim 6,

After forming the ultrasonic wave generators in the dome shape area and the planar shape area, respectively,

Depositing a photoresist on the top surface of the substrate;

Forming an aluminum pattern on a lower surface of the substrate;

Etching the lower surface of the substrate; And

Removing the photoresist deposited on the top surface of the substrate;

Further comprising the steps of:
12. The method of claim 11,

Wherein forming the aluminum pattern on the lower surface of the substrate comprises:

Depositing aluminum on the lower surface of the substrate; And

Etching the aluminum to correspond to the planar region and the dome region;

Lt; / RTI >

Wherein the etch depth in the planar region is deeper than in the dome region of the substrate in the step of etching the lower surface of the substrate.
A fingerprint recognition unit for generating a first ultrasonic wave to recognize a fingerprint;

A finger vein recognizing unit for recognizing a finger vein by generating a second ultrasonic wave; And

An authenticating unit for authenticating the user by considering the fingerprint recognized by the fingerprint recognizing unit and the finger vein recognized by the finger vein recognizing unit;

Lt; / RTI >

Wherein the fingerprint recognition unit is provided in a planar form so as to generate a first ultrasonic wave in the form of a plane wave toward the fingerprint, and the finger vein recognition unit is a dome-shaped security system configured to generate a second ultrasonic wave, .
14. The method of claim 13,

Wherein the authentication unit synchronizes the fingerprint recognized by the fingerprint recognition unit and the finger vein recognized by the finger vein recognition unit to analyze the position and the pattern of the finger vein according to the position of the fingerprint, And determines whether the position and pattern of the finger vein match the information on the finger vein previously stored in the authentication unit.
14. The method of claim 13,

Wherein the authentication unit determines whether or not the fingerprint recognized by the fingerprint recognition unit and the fingerprint recognized by the fingerprint recognition unit and information on the fingerprint previously stored in the authentication unit and information on the fingerprint match.