WO2019090855A1 - 铜钼钛合金蚀刻液 - Google Patents

铜钼钛合金蚀刻液 Download PDF

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WO2019090855A1
WO2019090855A1 PCT/CN2017/112873 CN2017112873W WO2019090855A1 WO 2019090855 A1 WO2019090855 A1 WO 2019090855A1 CN 2017112873 W CN2017112873 W CN 2017112873W WO 2019090855 A1 WO2019090855 A1 WO 2019090855A1
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acid
etching solution
group
solution according
chelating agents
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French (fr)
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武岳
李珊
姜春生
李佳育
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/742,097 priority Critical patent/US20190144748A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition

Definitions

  • the invention relates to the field of etching liquids, in particular to a copper molybdenum titanium (Cu-MoTi) alloy etching solution.
  • Cu-MoTi copper molybdenum titanium
  • a metal electrode is generally formed by a chemical etching prevention method. Specifically, first, the photoresist of the surface of the metal layer is patterned to define a photoresist layer, and then the region not protected by the photoresist layer is etched away by a chemical, and the photoresist layer is peeled off to complete the metal layer. The patterning process.
  • Commonly used metal wires are generally composed of a multilayer alloy, such as copper. - Molybdenum (Cu-Ti), copper-molybdenum-titanium alloy (Cu-MoTi) or copper-titanium (Cu-Ti) structure.
  • the traditional etching solution for copper/molybdenum-titanium alloy contains F Ion.
  • the Chinese patent 'etching liquid composition of a molybdenum alloy film and an indium oxide film' discloses a TFT-LCD for use in a TFT-LCD.
  • the etchant composition comprises: 5% to 25% by weight of hydrogen peroxide, based on the total weight of the overall composition, 0.1% to 2% by weight of corrosion inhibitor, 0.1% to 2% by weight of perfluoro compound, 0.1% to 2% by weight of perchlorinated compound, 0.1% to 5% Percent by weight of hydrogen peroxide stabilizer and water to achieve 100% by weight of the overall composition.
  • etchants are for glass and oxide semiconductors (IGZO)
  • IGZO glass and oxide semiconductors
  • the present invention first provides a Cu-MoTi alloy etching solution comprising: 5 to 30 wt% of an oxidizing agent, 3 to 15 wt% acid, 3 to 15 wt% inorganic salt, and deionized water having a total weight of the etching solution of 100%.
  • the etchant contains 8 to 12 wt% oxidant.
  • the etchant contains 5 to 10 wt% acid.
  • the etchant contains 5 to 10 wt% of an inorganic salt.
  • the oxidizing agent is selected from the group consisting of peroxy group-containing compounds.
  • the peroxy group-containing compound is hydrogen peroxide and its derivatives such as, but not limited to, hydrogen peroxide and persulfuric acid.
  • the acid is selected from the group consisting of polycarboxylic acids, amino acids, and inorganic acids.
  • the acid is a polycarboxylic acid.
  • the inorganic salt is selected from the group consisting of ammonium phosphate salts.
  • the ammonium phosphate salt is selected from the group consisting of diammonium phosphate, ammonium dihydrogen phosphate, and ammonium phosphate. Further, more preferably, the ammonium phosphate salt is diammonium phosphate or diammonium phosphate.
  • the polycarboxylic acid includes, but is not limited to, malic acid and citric acid, including but not limited to glycine and alanine, including but not limited to phosphoric acid and sulfuric acid.
  • the oxidizing agent contained in the etching solution is preferably hydrogen peroxide.
  • the acid contained in the etching solution is preferably citric acid.
  • a Cu-MoTi alloy etching solution comprising: 5 to 30 wt% of an oxidizing agent, 3 ⁇ 15 wt% polycarboxylic acid, 3 ⁇ 15 wt% inorganic salt, and the total weight of the etching solution is 100% Deionized water; wherein the oxidizing agent is hydrogen peroxide; the polycarboxylic acid is citric acid; and the inorganic salt is diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
  • the etching solution comprises 8 to 12 wt% An oxidizing agent, wherein the oxidizing agent comprises a group of hydrogen peroxide and persulfuric acid. More preferably, the oxidizing agent is hydrogen peroxide.
  • the etching solution comprises 5 to 10% by weight.
  • Polycarboxylic acid More preferably, the polycarboxylic acid is citric acid.
  • the Cu-MoTi etching solution contains 5 to 10% by weight.
  • An inorganic salt, wherein the inorganic salt is diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
  • a Cu-MoTi etching solution comprising: 8 to 12 wt% hydrogen peroxide, 5 ⁇ 10 wt% polycarboxylic acid, 5 ⁇ 10 wt% inorganic salt and the total weight of the etching solution is 100% Deionized water; wherein the polycarboxylic acid is malic acid or citric acid; and the inorganic salt is diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
  • a Cu-MoTi etching solution comprising: 8 to 12 wt% of an oxidizing agent, 5 ⁇ 10 wt% polycarboxylic acid, 5 ⁇ 10 wt% inorganic salt and the total weight of the etching solution is 100% Deionized water; wherein the oxidizing agent is hydrogen peroxide; the polycarboxylic acid is citric acid; and the inorganic salt is diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
  • the Cu-MoTi etching solution further comprises 0.01 ⁇ 5 wt% A metal chelating agent selected from the group consisting of aminocarboxylic acid chelating agents, hydroxycarboxylic acid chelating agents, tartaric acid, polyphosphate chelating agents, and polycarboxylic acid chelating agents.
  • the metal chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, hydroxyethylethylenediaminetriacetic acid, polyacrylic acid, and polymethacrylic acid.
  • the etching solution further comprises 0.01 to 5 wt% of a stabilizer.
  • the stabilizer is phenylurea.
  • the metal chelating agent and / or the metal chelating agent may be added to the Cu-MoTi alloy etching solution of the present invention. Or the stabilizer.
  • the oxidizing agent by the reasonable selection and reasonable dosage of the oxidizing agent, the polycarboxylic acid and the inorganic salt, a synergistic effect occurs between the components, thereby obtaining a simple preparation method, low manufacturing cost, no toxic side effects and no damage to the glass.
  • IGZO's Cu-MoTi alloy etchant The etchant can replace the existing F-containing etchant, which avoids the damage of the existing etchant to the glass and IGZO, thereby expanding the patterning of the metal layer. The scope of application of the process.
  • 1A and 1B are Cu-MoTi according to Embodiment 8 of the present invention, respectively.
  • a Cu-MoTi etching solution comprising: 5 ⁇ 30 wt% oxidant, 3 ⁇ 15 wt% Acid and 3 to 15 wt% of an inorganic salt, and deionized water having a total weight of the etching solution of 100%.
  • the selection and amount of oxidant are first optimized. Hydrogen peroxide and persulfuric acid were selected as the oxidizing agents in consideration of the cost control of the etching process and the control of the degree of danger.
  • the concentration range of the oxidant is determined to be 5 ⁇ 30%.
  • the oxidizing agent is selected from hydrogen peroxide in an amount of 8 to 12%.
  • the selection and amount of acid are optimized. Considering the cost control of the etching process and the control of the degree of danger, a polycarboxylic acid, an amino acid or a mineral acid is selected as the Cu-MoTi of the present invention.
  • the composition of the alloy etchant Determining the Cu-MoTi of the present invention after comprehensive consideration of safety and cost
  • the acid contained in the alloy etching solution may be one or a mixture of malic acid, citric acid, phosphoric acid, sulfuric acid or glycine.
  • citric acid can provide a good acidic environment for the etching process, and at the same time has the advantages of high safety and low cost.
  • the concentration of citric acid is determined to be in the range of 3 to 15%, preferably 5 to 10%. .
  • the selection and amount of inorganic salts are optimized.
  • the inorganic salt is in the Cu-MoTi of the present invention
  • the alloy etching solution functions as a buffer. Determining the Cu-MoTi of the present invention after comprehensive consideration of safety and cost
  • the inorganic salt contained in the alloy etching solution is selected from the group consisting of ammonium phosphate salts selected from the group consisting of diammonium phosphate, ammonium dihydrogen phosphate, and ammonium phosphate.
  • the inorganic salt is determined to be diammonium hydrogen phosphate or ammonium dihydrogen phosphate, and the concentration range is 3 ⁇ 15%, preferably 5 ⁇ 10%.
  • an optimized Cu-MoTi alloy etching solution A comprising: 8 ⁇ 12 wt% hydrogen peroxide, 5 to 10 wt% citric acid, 5 to 10 wt% diammonium hydrogen phosphate, and deionized water having a total weight of the etching solution of 100%.
  • the above raw materials are uniformly mixed to obtain the Cu-MoTi etching solution. A.
  • an optimized Cu-MoTi alloy etching solution B comprising: 8 ⁇ 12 wt% hydrogen peroxide, 5 ⁇ 10 wt% citric acid, 5 ⁇ 10 wt% diammonium hydrogen phosphate, 0.01 ⁇ 5 wt% phenylurea, and the total weight of the etching solution is 100% Deionized water wherein the phenylurea acts as a stabilizer.
  • the etching liquid B can be used for an etching process of a plurality of glass substrates.
  • an optimized Cu-MoTi alloy etching solution C comprising: 8 ⁇ 12 wt% hydrogen peroxide, 5 ⁇ 10 wt% citric acid, 5 ⁇ 10 wt% diammonium hydrogen phosphate, 0.01 ⁇ 5 wt% metal chelating agent, and the total weight of the etching solution is 100% Deionized water, wherein the metal chelating agent is selected from the group consisting of aminocarboxylic acid chelating agents, hydroxycarboxylic acid chelating agents, tartaric acid, polyphosphate chelating agents, and polycarboxylic acid chelating agents.
  • the etching solution C Can be used in etching processes for multiple glass substrates.
  • a Cu-MoTi alloy etching solution D is provided, which is specifically prepared as follows: 4.8 g of citric acid is weighed, 13.2 g of diammonium hydrogen phosphate, 0.3 g of phenylurea and 200 ml of 10% by weight of hydrogen peroxide. The above raw materials are uniformly mixed to obtain the Cu-MoTi etching solution.
  • the etching solution D was applied to etching of a Cu-MoTi alloy to obtain a microscopic examination chart as shown in Figs. 1A and 1B.
  • the etched Cu-MoTi wire has a good slope angle shape of about 30 °.
  • the top surface of the Cu-MoTi wire has no molybdenum residue.

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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
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Abstract

一种Cu-MoTi蚀刻液，包含：5～30wt％氧化剂、3～15wt％酸、3～15wt％无机盐以及使所述蚀刻液总重量为100％的去离子水；其中，所述氧化剂选自由过氧化氢和过硫酸组成的群组；所述酸选自由多元羧酸、氨基酸和无机酸组成的群组；以及，所述无机盐选自由磷酸氢二铵和磷酸二氢铵组成的群组。

Description

铜钼钛合金蚀刻液 技术领域
本发明涉及蚀刻液领域，特别涉及一种铜钼钛 (Cu-MoTi) 合金蚀刻液。
背景技术
在 TFT-LCD 的生产过程中，一般以化学蚀刻防方法形成金属电极。具体来说，首先对金属层表面的光阻进行图案化以定义光阻层，然后通过化学药品腐蚀掉未被所述光阻层保护的区域，再将所述光阻层剥离以完成金属层的图案化制程。常用的金属导线一般由多层合金组成，例如铜 - 钼 (Cu-Ti) 、铜 - 钼 - 钛合金 (Cu-MoTi) 或铜 - 钛 (Cu-Ti) 结构。
其中，用于铜 / 钼钛合金的传统蚀刻液均含有 F 离子。例如，中国专利'钼合金膜及铟氧化膜的蚀刻液组合物' ( 公开号： CN103890234A) 公开了一种用于 TFT-LCD 像素电极上的钼合金膜、铟氧化膜或钼合金膜和铟氧化膜的多重膜的蚀刻液组合物。所述蚀刻液组合物基于整体组合物总重量包含： 5% ～ 25% 重量百分比的过氧化氢、 0.1% ～ 2% 重量百分比的腐蚀抑制剂、 0.1% ～ 2% 重量百分比的全氟化合物、 0.1% ～ 2% 重量百分比的全氯化合物、 0.1% ～ 5% 重量百分比的双氧水稳定剂及使整体组合物的重量百分比达到 100% 的水。虽然在该蚀刻液中 F 离子的含量较低，但是此类蚀刻液对玻璃及氧化物半导体（ IGZO ）的伤害程度很大，这限制了金属层图案化制程中重工制程的次数以及 BCE 结构中 IGZO 的开发。
因此，我们需要一种新的 Cu-MoTi 合金蚀刻液 ，以解决目前存在的技术问题。
 技术问题
本发明的目的在于提供一种不含有 F 离子的 Cu-MoTi 合金蚀刻液，可以避免蚀刻液对 玻璃及 IGZO 的伤害，从而扩大金属层图案化 制程的应用范围。
技术解决方案
为了达到上述目的，本发明首先提供一种 Cu-MoTi 合金蚀刻液，包含： 5~30 wt% 氧化剂、 3~15 wt% 酸、 3~15 wt% 无机盐，以及使所述蚀刻液总重量为 100% 的去离子水。
在一优选实施例中，所述蚀刻液包含 8~12 wt% 氧化剂。
在一优选实施例中，所述蚀刻液包含 5~10 wt% 酸。
在一优选实施例中，所述蚀刻液包含 5~10 wt% 无机盐。
在本发明一实施例中，所述氧化剂选自含过氧基团的化合物。优选地，所述含过氧基团的化合物为过氧化氢及其衍生物，例如但不限于过氧化氢和过硫酸。
在本发明一实施例中，所述酸选自包括多元羧酸、氨基酸和无机酸组成的群组。优选地，所述酸为多元羧酸。
在本发明一实施例中，所述无机盐选自磷酸铵盐。优选地，所述磷酸铵盐选自包括磷酸氢二铵、磷酸二氢铵和磷酸铵的群组。并且，更为优选地，所述磷酸铵盐为磷酸磷酸氢二铵或磷酸二氢铵。
在本发明一优选实施例中，所述多元羧酸包括但不限于苹果酸和柠檬酸，所述氨基酸包括但不限于甘氨酸和丙氨酸，所述无机酸包括但不限于磷酸和硫酸。
在本发明一较佳实施例中，所述蚀刻液所包含的所述氧化剂优选为过氧化氢。
在本发明一较佳实施例中，所述蚀刻液所包含的所述酸优选为柠檬酸。
在本发明一较佳实施例中，提供一种 Cu-MoTi 合金蚀刻液，包含： 5~30 wt% 氧化剂、 3~15 wt% 多元羧酸、 3~15 wt% 无机盐，以及使所述蚀刻液总重量为 100% 的去离子水；其中所述氧化剂为过氧化氢；所述多元羧酸为柠檬酸；所述无机盐为磷酸氢二铵或磷酸二氢铵。
在本发明一较佳实施例中，所述蚀刻液包含 8~12 wt% 氧化剂，其中所述氧化剂包括过氧化氢和过硫酸的群组。更优选地，所述氧化剂为过氧化氢。
在本发明一较佳实施例中，所述蚀刻液包含 5~10wt% 多元羧酸。更有选地，所述多元羧酸为柠檬酸。
在本发明一较佳实施例中，所述 Cu-MoTi 蚀刻液包含 5~10wt% 无机盐，其中所述无机盐为磷酸氢二铵或磷酸二氢铵。
在本发明一较佳实施例中，提供一种 Cu-MoTi 蚀刻液，包含： 8~12 wt% 过氧化氢、 5~10 wt% 多元羧酸、 5~10 wt% 无机盐以及使所述蚀刻液总重量为 100% 的去离子水；其中所述多元羧酸为苹果酸或柠檬酸；所述无机盐为磷酸氢二铵或磷酸二氢铵。
在本发明一较佳实施例中，提供一种 Cu-MoTi 蚀刻液，包含： 8~12 wt% 氧化剂、 5~10 wt% 多元羧酸、 5~10 wt% 无机盐以及使所述蚀刻液总重量为 100% 的去离子水；其中所述氧化剂为过氧化氢；所述多元羧酸为柠檬酸；所述无机盐为磷酸氢二铵或磷酸二氢铵。
在本发明一实施例中，所述 Cu-MoTi 蚀刻液还包含 0.01~5 wt% 金属螯合剂，所述金属螯合剂选自包括氨基羧酸螯合剂、羟基羧酸螯合剂、酒石酸、聚磷酸盐螯合剂和聚羧酸螯合剂的群组。
在本发明一实施例中，所述金属螯合剂选自包括乙二胺四乙酸、羟乙基乙二胺三乙酸、聚丙烯酸和聚甲基丙烯酸的群组。
在本发明一实施例中，所述蚀刻液还包含 0.01~5 wt% 稳定剂。
在本发明一实施例中，所述稳定剂为苯基脲。
经验证，当过氧化氢浓度低于 5 wt% 时，本发明所述的 Cu-MoTi 合金蚀刻液的寿命较短，不适用于工业生产；而当氧化氢浓度高于 30 wt% 时，本发明所述的 Cu-MoTi 合金蚀刻液的危险程度增加，不利于生产安全。
当需要处理较多玻璃基板时，可以在本发明所述的 Cu-MoTi 合金蚀刻液中添加所述金属螯合剂和 / 或所述稳定剂。
 有益效果
在本发明中，通过氧化剂、多元羧酸和无机盐的合理选择及合理用量，使得各组分间发生协同作用，进而获得了一种制备方法简单、制造成本低廉、无毒副作用且不损伤 玻璃及 IGZO 的 Cu-MoTi 合金蚀刻液。该蚀刻液可以取代现有的含 F 蚀刻液，避免了现有蚀刻液对 玻璃及 IGZO 的伤害，从而扩大金属层图案化 制程的应用范围。
附图说明
以下仅以列举例的方式参考附图来描述各实施例，其中：
图 1A 和图 1B 分别是根据本发明实施例 8 所述的 Cu-MoTi 合金蚀刻液的蚀刻效果镜检图。
 本发明的最佳实施方式
以下，结合具体实施方式，对本发明的技术进行详细描述。应当知道的是，以下具体实施方式仅用于帮助本领域技术人员理解本发明，而非对本发明的限制。
实施例 1. Cu-MoTi 蚀刻液
在本实施例中，提供一种 Cu-MoTi 蚀刻液，包含： 5~30 wt% 氧化剂、 3~15 wt% 酸和 3~15 wt% 无机盐，以及使所述蚀刻液总重量为 100% 的去离子水。
实施例 2. 氧化剂的选择及用量优化
在本实施例中，首先对于氧化剂的选择及用量进行优化。考虑到蚀刻工序的成本控制及危险程度的控制，选用了过氧化氢和过硫酸作为氧化剂。
经实验证明：当氧化剂的浓度低于 5% 时，获得的 Cu-MoTi 合金蚀刻液寿命较短；而当氧化剂的浓度高于 30% 时，得的 Cu-MoTi 合金蚀刻液存在操作危险性高的安全隐患。因此，在本实施例中，确定了氧化剂的浓度范围为 5~30% 。并且，在综合考虑蚀刻效果及制造成本的情况下，确定所述氧化剂选用过氧化氢，用量为 8~12% 。
实施例 3. 酸的选择及用量优化
在本实施例中，对于酸的选择及用量进行优化。考虑到蚀刻工序的成本控制及危险程度的控制，选取了多元羧酸、氨基酸或无机酸作为本发明所述 Cu-MoTi 合金蚀刻液的组分。在综合考虑安全性及成本后，确定本发明所述 Cu-MoTi 合金蚀刻液所包含的酸可以为苹果酸、柠檬酸、磷酸、硫酸或甘氨酸中的一种或几种混合。
经实验证明，柠檬酸可以为蚀刻工艺提供良好的酸性环境，同时还兼具安全性高和成本低的优点。
在综合考虑蚀刻效果及制造成本的情况下，确定柠檬酸的浓度范围为 3~15% ，优选 5~10% 。
实施例 4. 无机盐的选择及用量优化
在本实施例中，对于无机盐的选择及用量进行优化。所述无机盐在本发明所述 Cu-MoTi 合金蚀刻液中起到缓冲剂的作用。在综合考虑安全性及成本后，确定本发明所述 Cu-MoTi 合金蚀刻液所包含的无机盐选择磷酸铵盐，所述磷酸铵盐选自包括磷酸氢二铵、磷酸二氢铵和磷酸铵的群组。在综合考虑安全性和制造成本的情况下，确定所述无机盐为磷酸氢二铵或磷酸二氢铵，浓度范围为 3~15% ，优选 5~10% 。
实施例 5. 优化的 Cu-MoTi 蚀刻液 A
在本实施例中，提供一种经优化的 Cu-MoTi 合金蚀刻液 A ，包含： 8~12 wt% 过氧化氢、 5~10 wt% 柠檬酸、 5~10 wt% 磷酸氢二铵，以及使所述蚀刻液总重量为 100% 的去离子水。将上述原料混合均匀，即得所述 Cu-MoTi 蚀刻液 A 。
实施例 6. 优化的 Cu-MoTi 蚀刻液 B
在本实施例中，提供一种经优化的 Cu-MoTi 合金蚀刻液 B ，包含： 8~12 wt% 过氧化氢、 5~10 wt% 柠檬酸、 5~10 wt% 磷酸氢二铵、 0.01~5 wt% 苯基脲，以及使所述蚀刻液总重量为 100% 的去离子水，其中所述苯基脲作为稳定剂。该所述蚀刻液 B 可以用于多枚玻璃基板的蚀刻工艺。
实施例 7. 优化的 Cu-MoTi 蚀刻液 C
在本实施例中，提供一种经优化的 Cu-MoTi 合金蚀刻液 C ，包含： 8~12 wt% 过氧化氢、 5~10 wt% 柠檬酸、 5~10 wt% 磷酸氢二铵、 0.01~5 wt% 金属螯合剂，以及使所述蚀刻液总重量为 100% 的去离子水，其中所述金属螯合剂选自包括氨基羧酸螯合剂、羟基羧酸螯合剂、酒石酸、聚磷酸盐螯合剂和聚羧酸螯合剂的群组。该所述蚀刻液 C 可以用于多枚玻璃基板的蚀刻工艺。
实施例 8. 验证实施例
在本实施例中，提供一种 Cu-MoTi 合金蚀刻液 D ，具体制备如下：称取 4.8g 柠檬酸、 13.2g 磷酸氢二铵、 0.3g 苯基脲和 200ml 质量分数为 10% 的过氧化氢。将上述原料混合均匀，即得所述 Cu-MoTi 蚀刻液。
将所述蚀刻液 D 应用于 Cu-MoTi 合金的蚀刻，获得如图 1A 和图 1B 所示的镜检图。如图 1A 所示的，蚀刻后的 Cu-MoTi 导线的坡度角形状完好，约为 30 °。而如图 1B 所示的，所述 Cu-MoTi 导线的顶面无钼残留。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (15)

  1. 一种 Cu-MoTi 合金蚀刻液，包含： 5~30 wt% 氧化剂、 3~15 wt% 酸、 3~15 wt% 无机盐，以及使所述蚀刻液总重量为 100% 的去离子水；
    其中，所述氧化剂选自含过氧基团的化合物，所述酸选自多元羧酸，以及，所述无机盐选自磷酸铵盐；
    所述含过氧基团的化合物为过氧化氢及其衍生物，所述磷酸铵盐选自包括磷酸二氢铵、磷酸氢二铵和磷酸铵的群组，所述多元羧酸选自包括苹果酸和柠檬酸的群组。
  2. 如权利要求 1 所述的蚀刻液，还包含 0.01~5 wt% 金属螯合剂，所述金属螯合剂选自包括氨基羧酸螯合剂、羟基羧酸螯合剂、酒石酸、聚磷酸盐螯合剂和聚羧酸螯合剂的群组。
  3. 如权利要求 2 所述的蚀刻液，其中，所述金属螯合剂选自包括乙二胺四乙酸、羟乙基乙二胺三乙酸、聚丙烯酸和聚甲基丙烯酸的群组。
  4. 如权利要求 1 所述的蚀刻液，还包含 0.01~5 wt% 稳定剂。
  5. 如权利要求 3 所述的蚀刻液，其中，所述稳定剂为苯基脲。
  6. 一种 Cu-MoTi 合金蚀刻液，包含： 5~30 wt% 氧化剂、 3~15 wt% 酸、 3~15 wt% 无机盐，以及使所述蚀刻液总重量为 100% 的去离子水；其中，所述氧化剂选自含过氧基团的化合物，所述无机盐选自磷酸铵盐。
  7. 如权利要求 6 所述的蚀刻液，其中，所述含过氧基团的化合物为过氧化氢及其衍生物。
  8. 如权利要求 6 所述的蚀刻液，其中，所述磷酸铵盐选自包括磷酸二氢铵、磷酸氢二铵和磷酸铵的群组。
  9. 如权利要求 6 所述的蚀刻液，其中，所述酸选自包括多元羧酸、氨基酸和无机酸的群组。
  10. 如权利要求 9 所述的蚀刻液，其中，所述酸为多元羧酸。
  11. 如权利要求 10 所述的蚀刻液，其中，所述多元羧酸包括苹果酸和柠檬酸，所述氨基酸包括甘氨酸和丙氨酸，所述无机酸包括磷酸和硫酸。
  12. 如权利要求 6 所述的蚀刻液，还包含 0.01~5 wt% 金属螯合剂，所述金属螯合剂选自包括氨基羧酸螯合剂、羟基羧酸螯合剂、酒石酸、聚磷酸盐螯合剂和聚羧酸螯合剂的群组。
  13. 如权利要求 12 所述的蚀刻液，其中，所述金属螯合剂选自包括乙二胺四乙酸、羟乙基乙二胺三乙酸、聚丙烯酸和聚甲基丙烯酸的群组。
  14. 如权利要求 6 所述的蚀刻液，还包含 0.01~5 wt% 稳定剂。
  15. 如权利要求 14 所述的 Cu-MoTi 蚀刻液，其特征在于，所述稳定剂为苯基脲。
PCT/CN2017/112873 2017-11-10 2017-11-24 铜钼钛合金蚀刻液 Ceased WO2019090855A1 (zh)

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