WO2019088783A1 - Lecteur d'image biométrique dans une zone d'affichage - Google Patents

Lecteur d'image biométrique dans une zone d'affichage Download PDF

Info

Publication number
WO2019088783A1
WO2019088783A1 PCT/KR2018/013311 KR2018013311W WO2019088783A1 WO 2019088783 A1 WO2019088783 A1 WO 2019088783A1 KR 2018013311 W KR2018013311 W KR 2018013311W WO 2019088783 A1 WO2019088783 A1 WO 2019088783A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
output
amplifier
signal
output current
Prior art date
Application number
PCT/KR2018/013311
Other languages
English (en)
Korean (ko)
Inventor
김재흥
김종욱
전호식
이준석
이명희
서원국
Original Assignee
크루셜텍 (주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크루셜텍 (주) filed Critical 크루셜텍 (주)
Publication of WO2019088783A1 publication Critical patent/WO2019088783A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1347—Preprocessing; Feature extraction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96—Touch switches
    • H03K17/962—Capacitive touch switches

Definitions

  • the present invention relates to an image reading apparatus, and more particularly, to a biometric image reading apparatus capable of minimizing influence due to noise in a display area and improving sensitivity.
  • An image reading apparatus captures an image using the property of a semiconductor that reacts with light or captures an image using electrical characteristics formed by a plurality of pixels included in the image reading apparatus in relation to the object to be detected.
  • an image reading device is installed in a device requiring fingerprint sensing, for example, a personal portable device such as a smart phone or a tablet PC.
  • an image reading apparatus including a plurality of pixels arranged in a matrix form including a plurality of rows and columns, the image reading apparatus comprising: A first output current obtained by summing a signal according to a signal and a noise, and a second output current output from the second pixel and including a signal according to noise, and outputting a first voltage value and a second voltage value, Processing circuit; And an analog-to-digital converter for digitizing and digitizing the first voltage value and the second voltage value.
  • the second pixel may be at least one pixel disposed at the outermost of the plurality of pixels.
  • the pixel signal processing circuit may include a signal sensitivity circuit provided in the same manner as the number of the columns.
  • the signal sensitivity circuit comprises: an amplifier having a first input coupled to the first pixel and a second input coupled to the second pixel; A first feedback capacitance coupled between a first input and a first output of the amplifier; And a second feedback capacitance coupled between a second input and a second output of the amplifier.
  • a reference voltage may be selectively supplied to a second input of the amplifier.
  • the first and second output terminals of the amplifier may be connected to a multiplexer, respectively.
  • the analog-to-digital converter may demultiplex the first output terminal and the second output terminal of the amplifier sequentially output through the multiplexer.
  • the image reading apparatus is further configured to control the image reading apparatus such that the magnitude of the first feedback capacitance, the magnitude of the second feedback capacitance, the time when the first feedback capacitance is charged by the first output current, And a control unit for varying at least one of a time to be charged by the output current and a time to be charged by the output current.
  • the control unit may perform the variable operation based on at least one of a magnitude of the first output current, an operation state of the amplifier, and a deviation between the first output currents output from the plurality of pixels.
  • the output signal according to the noise is differentiated from each pixel output signal, image detection without influence of noise becomes possible.
  • the characteristics of the amplifier for amplifying the output signal of each pixel can be varied in the image reading apparatus, image detection with high resolution can be performed in various environments.
  • FIG. 1 is a diagram showing a configuration of an image reading apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing the configuration of a unit pixel included in an image reading apparatus according to an embodiment of the present invention.
  • FIG. 3 is a diagram showing a configuration of a sensitivity improvement circuit of an output signal processing circuit according to an embodiment of the present invention.
  • FIG. 4 is a graph showing a relationship between a gate-source voltage and an output current in a unit pixel of an image reading apparatus according to an embodiment of the present invention.
  • FIG. 1 is a diagram showing a configuration of an image reading apparatus according to an embodiment of the present invention.
  • the image reading apparatus may include a sensor panel 100, a power supply voltage supply unit 200, and a pixel signal reading unit 300.
  • the sensor panel 100 is composed of a plurality of pixels 110 arranged in a matrix of mxn (m, n is a natural number) matrix.
  • the plurality of pixels 110 are connected to one scan line SL1, SL2, SL3, ..., SLm and one lead-out line RL1, RL2, ..., RLn.
  • one of the scan lines SL1, SL2, SL3, ..., and SLm is supplied with a scan signal, one or more of the pixels 110 connected to the scan line SL1 starts to operate.
  • the operation of the pixel 110 will be described later in detail.
  • the output signal output in accordance with the operation of the pixel 110 is transmitted to the signal reading unit 300 through the lead out lines RL1, RL2, ..., RLn.
  • each of the lead-out lines RL1, RL2, ..., and RLn is connected to the power supply voltage supply unit 200 and the other end is connected to the signal reading unit 300.
  • the signal reading unit 300 may include a pixel signal processing circuit 310, a multiplexer unit 320, and an analog / digital conversion unit 330.
  • the pixel-signal processing circuit 310 outputs a signal based on a noise-removing operation to be performed by the analog-to-digital converter 330, which will be described later in detail.
  • the pixel-signal processing circuit 310 may perform a high-frequency noise removing operation on a signal output from each pixel 110 including a low-pass filter and the like.
  • the signals output from the lead-out lines RL1, RL2, ..., RLn should be influenced only by the detection object on the sensor panel 100, but are actually affected by the disturbance. That is, the signal output from each of the lead-out lines RL1, RL2, ..., RLbn becomes a form in which the signal based on the pure detection object and the signal based on the noise based on the disturbance are added together.
  • the pixel-signal processing circuit 310 performs a readout operation in which a reference pixel 111 that is not affected by the detection target is connected to the signal output from each of the lead-out lines RL1, RL2, ..., RLn, And subtracts the signals output from the lines RL1 and RLn.
  • the reference pixel 111 may be one or more pixels disposed in an area of the sensor panel 100 that is not in contact with the detection object, for example, outside the active area of the sensor panel 100.
  • the pixel signal processing circuit 310 performs a function of varying the gain of the amplifier to prevent saturation of the amplifier included therein.
  • the plurality of signals output through the pixel signal processing circuit 310 are input to the multiplexer unit 320 and the multiplexer unit 320 sequentially outputs the plurality of signals to the analog-to-digital converter 330.
  • the analog-to-digital converter 330 digitizes the input signal and outputs it as a final output signal of the pixel-signal reading unit 300.
  • FIG. 2 is a circuit diagram showing a configuration of a unit pixel according to an embodiment of the present invention.
  • a unit pixel 110 includes a sensor pad SP, a data line DL, and a data pad DL, which form a sensing capacitance Cs in relation to a detection target (e.g., a fingerprint)
  • the first electrode of the first transistor T1 is connected to the scan line SL and the second electrode thereof is connected to the data line DL while the third electrode of the first transistor T1 is connected to the charge capacitance Ca and the sensor pad SP.
  • the first electrode may be a gate electrode
  • the second and third electrodes may be a source electrode (or a drain electrode) and a drain electrode (or a source electrode), respectively.
  • the first electrode of the second transistor T2 is connected to the charge capacitance Ca and the sensor pad SP and the second electrode of the second transistor T2 is connected to the power supply voltage VDD input terminal of the power supply voltage supply unit 200 shown in FIG.
  • the third electrode is connected to the pixel-signal reading unit 300 through the lead-out line RL.
  • the first electrode may be a gate electrode
  • the second and third electrodes may be a drain electrode (or a source electrode) and a source electrode (or a drain electrode), respectively.
  • the second transistor T2 is implemented as an n-type transistor, and the second and third electrodes are respectively a drain electrode and a source electrode.
  • One end of the charge capacitance Ca is connected to the third electrode of the first transistor T1, the first electrode of the sensor pad SP and the second transistor T2, and the other end thereof is connected to the ground potential.
  • a constant potential Vd is supplied to the data line DL.
  • the unit pixel 110 constituting the sensor panel 100 (see FIG. 1) according to an embodiment is disposed on a display panel (not shown).
  • a display panel (not shown).
  • the sensor pad SP, the transistors T1 and T2, the scan line SL, the data line DL, and the lead-out line RL of the unit area 110 should all be made of a substantially transparent material.
  • the transistors T1 and T2 may be implemented as transistors using oxides such as IGZO (Indium Gallium Zinc Oxide), ZnO (Zinc Oxide), and ITO (Indium Tin Oxide) (SL), the data line (DL), and the lead-out line (RL) may be formed of an oxide such as ITO (Indium Tin Oxide) to be substantially transparent.
  • oxides such as IGZO (Indium Gallium Zinc Oxide), ZnO (Zinc Oxide), and ITO (Indium Tin Oxide) (SL)
  • the data line (DL), and the lead-out line (RL) may be formed of an oxide such as ITO (Indium Tin Oxide) to be substantially transparent.
  • a sensing capacitance Cs is formed between the sensor pad SP and the detection object.
  • the first transistor T1 is turned on and the current Ia flows between the data line DL and the first node N1 do.
  • This current charges the charging capacitance Ca and the sensing capacitance Cs, and as time elapses, the potential V1 of the first node N1 rises.
  • the potential V1 of the first node N1 can be expressed as follows.
  • V1 (t0) Ia (t0) / (Ca + Cs)
  • the potential V1 of the first node N1 is inversely proportional to the magnitude of the sensing capacitance Cs.
  • the change of the potential V1 of the first node N1 is the potential of the first electrode of the second transistor T2, that is, the gate electrode G
  • the change of the potential V1 of the first node N1 is the potential of the second transistor T2) of the output current (Id).
  • the second transistor T2 has a unique current-voltage (I-V) characteristic. The change of the gate-source voltage of the specific section according to the current-voltage characteristic causes a change in the magnitude of the output current (Id) with a large width.
  • the output current Id varies depending on the gate-source voltage of the second transistor T2.
  • the magnitude of the output current Id varies depending on the potential V1 of the first node N1
  • the potential V1 of the first node N1 varies with the potential of the sensing capacitance Cs It depends on size. Therefore, even if the potential V1 of the first node N1 changes finely during a period in which the output current Id changes steeply with respect to the gate-source voltage of the second transistor T2, Can be detected with high sensitivity.
  • the sensing capacitance Cs formed when the sensor pad SP touches the ridge of the fingerprint and when it touches the valley of the fingerprint is different. Accordingly, the magnitude of the output current Id in the pixel 110 in which the corresponding sensor pad SP is disposed also varies. Accordingly, it is possible to obtain a difference in output current (Id) value from the minute electrical difference between the ridge and the valley of the fingerprint with high sensitivity, and thereby obtain the image of the fingerprint on the sensor panel 100.
  • FIG. 2 shows only the first transistor T1 used for selecting a pixel and the second transistor T2 used for amplifying and outputting a pixel signal, additional transistors for performing an additional switching function may be further included .
  • a fingerprint detecting device is stacked on or integrated with a display panel, so that a thick protective layer (not shown) can be disposed on the fingerprint detecting device.
  • the sensing capacitance Cs formed between the fingerprint and the sensor pad SP becomes smaller in inverse proportion to the thickness of the sensor pad SP.
  • the difference between the sensing capacitance Cs of the sensor pad SP and the sensing capacitance Cs formed between the sensor pad SP and the fingerprint of the fingerprint becomes small and the output current Id ) And the output current Id output when it comes in contact with the valley becomes smaller.
  • the gate-source voltage of the second transistor T2 must be in the optimum range, so that the change of the output current Id with respect to a minute change becomes large.
  • the gate-source voltage of the second transistor T2 may be outside the optimal range. In this case, the amount of change of the output current (Id) with respect to the change of the gate-source voltage of the second transistor (T2) becomes small, and the sensitivity of the fingerprint sensor can not be guaranteed.
  • the sensor panel is provided with a plurality of pixels, which can not prevent the dispersion of characteristics during the process.
  • the non-uniformity of characteristics of each pixel may occur depending on the influence of scattering of such characteristics.
  • the gate-source voltage of the second transistor T2 may deviate from the optimal range, and when the difference in the output current Id in each pixel is not large, the problem of leading to a decrease in sensitivity of the fingerprint sensing Occurs.
  • Noise is added to the output current (Id) of the pixel 110 due to the influence of the external environment or the parasitic capacitance formed in the internal circuit of the pixel 110 at the time of fingerprint detection. If noise is added in a situation where the magnitude of the output current (Id) when touched is small, it may become difficult to distinguish the ridge and the ridge of the fingerprint.
  • the embodiment of the present invention performs an operation of subtracting a noise signal from an output signal from the pixel 110 and a sensitivity improving operation.
  • FIG. 3 is a diagram showing a configuration of an output signal processing circuit according to an embodiment of the present invention.
  • FIG. 3 is a diagram showing a sensitivity improving circuit 311 connected to one lead-out line RL in the image reading apparatus according to the embodiment.
  • This sensitivity improving circuit 311 is connected to the lead- In each of the lead-out lines. That is, if the number of lead-out lines in the image reading apparatus according to the embodiment is n, n sensitivity improvement circuits 311 are also provided.
  • the sensitivity improvement circuit 311 has a first input IN1 connected to a specific lead-out line RL, a second input IN2 connected to the dummy channel DC, And outputs the amplified signal to the first output terminal OUT1, amplifies the signal at the second input terminal IN2, and outputs the amplified signal to the second output terminal OUT2.
  • a first feedback capacitance Cfb1 is connected between the first input IN1 and the first output OUT1 of the amplifier FEA and a second feedback capacitance Cfb2 is connected between the second input IN2 and the second output OUT2.
  • the capacitance Cfb2 is connected.
  • the first feedback capacitance Cfb1 and the second feedback capacitance Cfb may be implemented with variable capacitances, respectively.
  • the first switch SW1 is connected between the second input terminal of the amplifier FEA and the dummy channel DC and the second switch SW2 is connected between both ends of the first feedback capacitance Cfb1.
  • a second switch SW3 is connected between both ends of the feedback capacitance Cfb2.
  • the reference voltage Vref may be selectively supplied to the second input IN2 of the amplifier FEA and may further include a reset switch SWr for controlling the reference voltage Vref.
  • the power supply voltage VDD for operation may be applied to the amplifier FEA.
  • the dummy channel DC is connected to the reference pixel 111 (see Fig. 1) connected to the least one of the plurality of pixels 110 (see Fig. 1) constituting the sensor panel 100, Line.
  • the reset switch SWr is turned on, and the first input IN1 and the second input IN2 of the amplifier FEA are reset to the reference voltage Vref.
  • the second switch SW2 and the third switch SW3 are controlled to be turned on, and the feedback capacitances Cfb1 and Cfb2 of the amplifier FEA are reset.
  • the reset switch SWr, the second switch SW2 and the third switch SW3 are controlled to be in an OFF state, the first switch SW1 is switched to the ON state, and the first input terminal
  • the output current Id of the specific unit pixel 110 flowing through the specific lead out line RL is inputted to the first input IN1 of the amplifier FEA and the output current Id of the specific unit pixel 110 flowing through the dummy channel DC to the second input IN2 of the amplifier FEA
  • the output current Ir of the reference pixel 111 is input.
  • the amplifier FEA converts the output current Id of the specific unit pixel 110 input to the first input terminal IN1 into the first voltage V1 and outputs the first output voltage OUT to the first output terminal OUT1.
  • the amplifier FEA converts the output current Ir of the reference pixel 111 input to the second input IN2 into a second voltage V2 and outputs the second voltage V2 to the second output OUT2.
  • the first and second output terminals OUT1 and OUT2 of the amplifier FEA are connected to the multiplexers 321 and 322, respectively. That is, if there are n lead-out lines in the image reading apparatus according to the embodiment, the number of multiplexers 321 and 322 provided in the multiplexer unit 320 becomes 2n.
  • the analog-to-digital converter 330 converts the first voltage value V1 and the second voltage value V2, which are input sequentially, to a digital value and outputs the digital value.
  • the voltage value Vds obtained by amplifying the output current Ids from the unit pixel 111 with the first voltage value V1 being purely in contact with the object to be detected and the output current In according to the noise are amplified
  • the current Id output from the specific pixel 110 varies according to the gate-source voltage Vgs of the second transistor T2 as described above. The relationship is shown in FIG.
  • the gate voltage of the second transistor T2 is determined by the sensing capacitance Cs and the sensing capacitance Cs varies depending on which region of the sensing object SP the sensing pad SP is in contact with .
  • the gate-source voltage V ridge of the second transistor T2 formed as the ridge of the fingerprint touches the sensor pad SP, If the gate-source voltage V valley of the second transistor T2 formed in response to the touch of the fingerprint in the area of the third pixel in the graph of FIG. 4 is equal to the output current Id of the unit pixel 110 ), There is no problem in obtaining a fingerprint image based on the output current Id.
  • the sensing capacitance Cs between the fingerprint and the sensor pad SP becomes small, (Absolute value) of the gate-source voltage Vgs of the second transistor T2 formed when the fingerprint is touched.
  • the ridge may touch the sensor pad SP,
  • the output current Id of the unit pixel 110 becomes lower than the noise level irrespective of whether or not the fingerprint ridges and the ridges of the fingerprint are present.
  • the difference between the value of the output current Id corresponding to the ridge of the fingerprint and the value of the output current Id corresponding to the valley of the fingerprint is not large, and high sensitivity can not be guaranteed.
  • the amplifier FEA amplifies and converts the currents Id and In inputted to the first and second input terminals IN1 and IN2 to generate first and second voltage values V1 and V2
  • the first and second voltage values V1 and V2 may be expressed by the following equations, respectively.
  • V1 (Id? T1) / Cfb1
  • V2 (In ⁇ t2) / Cfb2
  • t1 and t2 are time periods during which the first and second feedback capacitances Cfb1 and Cfb2 maintain the charged state, that is, the time period during which the second and third switches SW2 and SW3 are maintained in the off state .
  • the amplitude of the first voltage value V1 and the second voltage value V2 output from the amplifier FEA may be varied if at least one of t1, t2, Cfb1 and Cfb2 is varied in the above equation, The difference between the final output signal due to ridge contact and the final output signal according to the bone may also be increased. Also, the amplifier (FEA) may be controlled not to be saturated.
  • t1, t2, Cfb1, Cfb2 may be determined at the time of designing the pixel-signal reading unit 300 of the image reading apparatus, but may be determined during the fingerprint sensing operation.
  • a separate control unit for controlling the magnitude of the first feedback capacitance Cfb1 and the second feedback capacitance Cfb2 and the respective charging times may be added to the image reading apparatus And the control unit may control the first feedback capacitance Cfb1 and the second feedback capacitance Cfb1 according to the value of the gate-source voltage Vgs or the output current Id of the second transistor T2 of the specific pixel 110, The magnitude of the second feedback capacitance Cfb2 and the control command signal for variably setting the respective charging times.
  • the first feedback capacitance Cfb1 and the second feedback capacitance Cfb2 may be implemented with variable capacitance.
  • the predetermined threshold current is exceeded as a result of sensing the magnitude of the current (Id, Ir) input to the sensitivity improvement circuit 311, it is determined that the amplifier (FEA) , And the magnitude of the feedback capacitances (Cfb1, Cfb2) can be set high by a predetermined magnitude. Further, when it is determined that the current state of the amplifier FEA is saturated, the feedback capacitances Cfb1 and Cfb2 may be set to be higher by a predetermined amount in the sensing operation.
  • the feedback capacitances Cfb1 and Cfb2 of the amplifier FEA are used to perform the charging operation May be increased. That is, it is also possible to increase the gain of the amplifier FEA by increasing the time during which the second and third switches SW3 are kept in the off state. At this time, a method of improving the gain by reducing the magnitude of the feedback capacitances Cfb1 and Cfb2 of the amplifier (FEA) is also possible in another method.
  • the sensing of the magnitude of the current (Id, Ir), the sensing of the operating state of the amplifier (FEA), and the sensing of the deviation of the currents Id may be performed by a separate controller (not shown).
  • the control unit may generate a control signal for controlling at least one of the magnitude of the feedback capacitances Cfb1 and Cfb2 and the charging time of the feedback capacitances Cfb1 and Cfb2 according to the sensing result.
  • the influence of noise can be minimized, and the object to be detected can be accurately recognized.
  • the element sensitivity and the operation time in the sensitivity improvement circuit are controlled to ensure the sensing sensitivity.

Landscapes

  • Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Image Input (AREA)

Abstract

Selon un mode de réalisation, l'invention concerne un lecteur d'image, qui est un lecteur d'image comportant une pluralité de pixels disposés sous la forme d'une matrice comprenant une pluralité de rangées et de colonnes, comportant: un circuit de traitement de signaux de pixels pour émettre en sortie une première valeur de tension et une seconde valeur de tension par amplification et conversion d'un premier courant de sortie qui est émis à partir d'un premier pixel, et dans lequel un signal associé à un objet à détecter et un signal associé à un bruit sont combinés, et un second courant de sortie émis à partir d'un second pixel et comprenant le signal associé au bruit; et une unité de conversion analogique-numérique pour une numérisation au moyen de la différence entre la première valeur de tension et la seconde valeur de tension.
PCT/KR2018/013311 2017-11-06 2018-11-05 Lecteur d'image biométrique dans une zone d'affichage WO2019088783A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170146825A KR101913650B1 (ko) 2017-11-06 2017-11-06 디스플레이 영역에서의 생체 이미지 판독 장치
KR10-2017-0146825 2017-11-06

Publications (1)

Publication Number Publication Date
WO2019088783A1 true WO2019088783A1 (fr) 2019-05-09

Family

ID=62474601

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/013311 WO2019088783A1 (fr) 2017-11-06 2018-11-05 Lecteur d'image biométrique dans une zone d'affichage

Country Status (3)

Country Link
KR (1) KR101913650B1 (fr)
CN (2) CN109753860A (fr)
WO (1) WO2019088783A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050089186A (ko) * 2004-03-04 2005-09-08 엘지전자 주식회사 휴대용 컴퓨터에서의 디지털 변환 스위치 장치
KR100991130B1 (ko) * 2010-03-19 2010-11-02 주식회사 에임즈 터치 패널 구동 장치
JP2012168919A (ja) * 2010-12-28 2012-09-06 Sharp Corp タッチパネルシステムおよび電子機器
KR20120115766A (ko) * 2011-04-11 2012-10-19 주식회사 동부하이텍 터치 감지 장치
KR20170108264A (ko) * 2016-03-17 2017-09-27 삼성전자주식회사 지문 감지 센서 및 이를 포함하는 전자 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4247995B2 (ja) * 2005-02-03 2009-04-02 富士通マイクロエレクトロニクス株式会社 固体撮像素子のデータ読出回路、撮像装置および固体撮像素子のデータ読出方法
JP2007158663A (ja) * 2005-12-05 2007-06-21 Ricoh Co Ltd アナログ画像信号のオフセット調整方法
JP2008177760A (ja) * 2007-01-17 2008-07-31 Sony Corp 固体撮像装置、撮像装置
TWI420374B (zh) * 2008-09-08 2013-12-21 Innolux Corp 用於電容式觸控面板之感測電路、以及應用前述感測電路之電子裝置
DE102009046177A1 (de) * 2008-10-30 2010-06-10 Samsung Electronics Co., Ltd., Suwon Berührungsdatengenerator
JP2011004390A (ja) * 2009-05-18 2011-01-06 Canon Inc 撮像装置、撮像システム、及び撮像装置の駆動方法
US9367900B2 (en) * 2012-10-04 2016-06-14 Panasonic Intellectual Property Corporation Of America Image noise removing apparatus and image noise removing method
US10354113B2 (en) * 2014-10-16 2019-07-16 Crucialtec Co., Ltd. Fingerprint detecting apparatus canceling offset and control method thereof
WO2016144108A1 (fr) * 2015-03-10 2016-09-15 크루셜텍 (주) Dispositif d'affichage capable de numériser des images
CN205507799U (zh) * 2016-02-23 2016-08-24 北京集创北方科技股份有限公司 用于指纹传感器的信号处理电路
CN106157891B (zh) * 2016-08-15 2018-10-12 京东方科技集团股份有限公司 一种纹路识别显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050089186A (ko) * 2004-03-04 2005-09-08 엘지전자 주식회사 휴대용 컴퓨터에서의 디지털 변환 스위치 장치
KR100991130B1 (ko) * 2010-03-19 2010-11-02 주식회사 에임즈 터치 패널 구동 장치
JP2012168919A (ja) * 2010-12-28 2012-09-06 Sharp Corp タッチパネルシステムおよび電子機器
KR20120115766A (ko) * 2011-04-11 2012-10-19 주식회사 동부하이텍 터치 감지 장치
KR20170108264A (ko) * 2016-03-17 2017-09-27 삼성전자주식회사 지문 감지 센서 및 이를 포함하는 전자 장치

Also Published As

Publication number Publication date
CN109753860A (zh) 2019-05-14
CN207489037U (zh) 2018-06-12
KR101913650B1 (ko) 2018-10-31

Similar Documents

Publication Publication Date Title
WO2013176302A1 (fr) Capteur capacitif d'empreinte digitale
WO2015008902A1 (fr) Capteur de reconnaissance d'empreinte digitale pouvant détecter une empreinte digitale à l'aide d'un procédé optique et capacitif
WO2016076562A1 (fr) Circuit de transfert de charge pour détection capacitive, et appareil de détection d'empreinte digitale le comprenant
WO2014208897A1 (fr) Appareil et procédé de détection de toucher
WO2011031032A2 (fr) Circuit intégré de lecture pour un écran tactile
WO2016163775A1 (fr) Capteur capacitif d'empreinte digitale
WO2013129849A1 (fr) Procédé de détection tactile et appareil de détection tactile à linéarité renforcée
TW201032107A (en) Active pixel sensor and method for making same
TW201738716A (zh) 具有感測參考電位提供電路系統之指紋感測系統
WO2014208898A1 (fr) Appareil de détection de contact
US11954283B2 (en) High resolution touch sensor apparatus and method
JP2022507996A (ja) タッチ検出回路、タッチ表示装置及びタッチ検出方法
RU2464623C2 (ru) Устройство дисплея и способ управления устройством дисплея
WO2015156553A1 (fr) Dispositif de détection d'empreintes digitales et procédé de compensation de l'atténuation de son signal d'attaque
US11847280B2 (en) Touch panel and touch detection circuit thereof
WO2019088783A1 (fr) Lecteur d'image biométrique dans une zone d'affichage
TWI503757B (zh) 指紋感測器
JP2013015329A (ja) センサモジュール及び表示装置
WO2018151414A1 (fr) Unité de reconnaissance capacitive d'empreintes digitales, circuit de mesure capacitive de capteur d'empreintes digitales, et dispositif de reconnaissance d'empreintes digitales les comprenant
WO2013183926A1 (fr) Appareil de détection tactile ayant une fonction de commande de capacité parasite, et procédé de détection tactile
WO2019088784A1 (fr) Lecteur d'image biométrique dans une zone d'affichage
US10707264B2 (en) Image sensor and imaging apparatus
US20240021007A1 (en) Biometric skin contact sensor and method of operating a biometric skin contact sensor
TWI406032B (zh) 觸控面板的讀取裝置與多通道讀取裝置
WO2016200068A1 (fr) Dispositif de détection d'empreintes digitales et procédé de détection d'empreintes digitales

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18872145

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18872145

Country of ref document: EP

Kind code of ref document: A1