WO2019077873A1 - Control device - Google Patents

Control device Download PDF

Info

Publication number
WO2019077873A1
WO2019077873A1 PCT/JP2018/031117 JP2018031117W WO2019077873A1 WO 2019077873 A1 WO2019077873 A1 WO 2019077873A1 JP 2018031117 W JP2018031117 W JP 2018031117W WO 2019077873 A1 WO2019077873 A1 WO 2019077873A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching element
island
terminal
terminals
unit
Prior art date
Application number
PCT/JP2018/031117
Other languages
French (fr)
Japanese (ja)
Inventor
幸幹 松下
Original Assignee
株式会社デンソー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Publication of WO2019077873A1 publication Critical patent/WO2019077873A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P25/00—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details
    • H02P25/16—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details characterised by the circuit arrangement or by the kind of wiring
    • H02P25/22—Multiple windings; Windings for more than three phases
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Definitions

  • the present disclosure relates to a control device that controls driving of switching elements that constitute upper and lower arms.
  • Patent Document 1 discloses a semiconductor module in which switching elements constituting upper and lower arms for one phase and a control device (control circuit) for controlling driving of the switching elements are integrated.
  • the same number of semiconductor modules as the number of phases of the stator winding of the rotating electrical machine are required. Therefore, when one of the upper arm and the lower arm generates a short circuit failure or a temperature abnormal failure, the switching element failed in the communication period from the control device of the failed semiconductor module to the control device of the other semiconductor module. Current concentrates on the Therefore, the switching element can not be properly protected.
  • the control device is normally activated from the sleep state using a phase voltage which is an output voltage of the upper and lower arms as a trigger.
  • a phase voltage which is an output voltage of the upper and lower arms as a trigger.
  • the control device can not be activated when the lower arm fails in a short circuit. Therefore, the control device can not detect the failure of the switching element and appropriately protect the switching element.
  • An object of the present disclosure is to provide a control device capable of appropriately protecting a switching element in the event of a failure.
  • a control device that configures a semiconductor module with a high-side switching element and a low-side switching element as switching elements configuring upper and lower arms of multiple phases and controls driving of the switching elements.
  • a voltage detection unit that detects a voltage between main electrodes of the switching element that configures each arm, or a phase voltage of each phase upper and lower arm, and the switching element based on a voltage value detected by the voltage detection unit
  • a determination unit for determining whether or not a short circuit failure has occurred, and turning off the switching element in which the failure has occurred if it is determined by the determination unit that a failure has occurred, and And a driver for turning on the switching elements on the same side.
  • the failed switching element when a short circuit failure occurs, the failed switching element is turned off. In addition, the switching element of another phase in the same semiconductor module and on the same side is turned on. Thus, in the same semiconductor module, a normal phase which has not failed is immediately transferred to the protection operation.
  • the switching element can be appropriately protected at the time of the short failure.
  • a control device that configures a semiconductor module together with a high-side switching element and a low-side switching element as switching elements configuring upper and lower arms of multiple phases and controls driving of the switching elements. Determining whether or not a temperature abnormality failure has occurred in the switching element based on a temperature detection unit that detects the temperature of the switching element that configures each arm, and the temperature detected by the temperature detection unit And, when it is determined by the determination unit that a failure has occurred, the switching device that has a failure is turned off, and the switching device on the same side that is a phase different from the switching device that has a failure is turned on. And a drive unit.
  • the failed switching element when a failure due to a temperature abnormality occurs, the failed switching element is turned off. In addition, the switching element of another phase in the same semiconductor module and on the same side is turned on. Thus, in the same semiconductor module, a normal phase which has not failed is immediately transferred to the protection operation.
  • the switching element can be appropriately protected at the time of failure due to temperature abnormality.
  • a control device that controls driving of switching elements forming upper and lower arms of a plurality of phases includes a processing unit that executes a predetermined process and phase voltages of the upper and lower arms of the plurality of phases. And an activation unit configured to activate the processing unit from a sleep state when at least one of the phase voltages exceeds a threshold voltage.
  • control unit includes: an activation unit that activates the processing unit from a sleep state when at least one of the phase voltages exceeds a threshold voltage. Therefore, the switching element can be properly protected.
  • FIG. 2 is a cross-sectional view showing a controller-integrated electric rotating machine according to a first embodiment; It is an expanded sectional view showing a control device part, Is an equivalent circuit diagram,
  • FIG. 10 is a plan view showing the arrangement of semiconductor modules and bus bars; It is a plan view showing a connection structure of a main terminal and a bus bar, It is a perspective view showing a semiconductor module, It is a front view showing a semiconductor module, It is a rear view showing a semiconductor module, It is a top view which shows a semiconductor module, It is a bottom view showing a semiconductor module, FIG.
  • FIG. 8 is a side view seen from the X1 direction shown in FIG. 7; 8 is a cross-sectional view taken along the line XII-XII in FIG. 7; FIG. 8 is a cross-sectional view taken along the line XIII-XIII of FIG. 7; It is the perspective view which abbreviate
  • omitted the sealing resin body It is an exploded perspective view, It is the front view which omitted the sealing resin body, It is the rear view which omitted the sealing resin body, It is the top view which omitted the sealing resin body, It is the bottom view which omitted the sealing resin body, 17 is a side view seen from the X1 direction shown in FIG.
  • FIG. 16 It is a plan view showing a lead frame before tie bar cut, It is a schematic diagram which shows arrangement
  • FIG. 5 is a diagram showing the extending direction of the shunt resistor and the tie bar, It is a figure which shows the effect by parallel arrangement, It is a top view which shows a modification, It is a figure showing a modification, FIG. 7 is a cross-sectional view showing a controller-integrated electric rotating machine of a second embodiment; Is an equivalent circuit diagram, It is a plan view seen from the controller side, In the state which removed the cover, it is the top view seen from the control apparatus part side, Fig.
  • FIG. 6 is an exploded view of the power assembly; It is a perspective view showing a semiconductor module, It is a front view showing a semiconductor module, It is a rear view showing a semiconductor module, It is a top view which shows a semiconductor module, It is a bottom view showing a semiconductor module, 40 is a side view seen from the X1 direction shown in FIG. 40; 40 is a cross-sectional view along the line XLV-XLV in FIG.
  • FIG. 51 is a side view seen from the X1 direction shown in FIG. 48, It is a plan view showing a lead frame before tie bar cut, It is a figure showing a drive part, FIG. 7 is a diagram showing a connection structure between a plurality of semiconductor modules, It is a figure which shows the signal which notifies a failure, FIG.
  • FIG. 17 is a diagram showing control when a short failure occurs, In the reference example, it is a timing chart when a short failure occurs, It is a timing chart when a short failure occurs, It is a figure showing control when temperature abnormality arises,
  • FIG. 10 is a diagram showing control when an open failure occurs, It is a figure which shows the 1st modification of a drive part, It is a figure showing the circuit composition of a drive part, It is a timing chart at startup,
  • FIG. 7 is a diagram showing a through current across phases at the time of digital circuit failure;
  • FIG. 10 is a diagram showing a reference example of a circuit that protects a switching element from a through current,
  • FIG. 73 is a diagram showing a problem when a digital circuit fails in the reference example shown in FIG. 66, It is a figure which shows the 2nd modification of a drive part.
  • FIG. 5 shows a connection structure between the positive electrode terminal and the negative electrode terminal of the main terminals and the bus bar.
  • the signal terminal and the dummy terminal are abbreviate
  • the controller integrated electric rotating machine 1 includes a rotating electric machine unit 10 and a control unit 20 for controlling the rotating electric machine unit 10, and the control unit 20 controls rotation. It is integrated with the electric unit 10.
  • a direction along the rotation axis is referred to as an axial direction.
  • the direction from the control device unit 20 side to the rotating electrical machine unit 10 side is referred to as the front, and the direction from the rotating electrical machine unit 10 side to the control device unit 20 is as the rear.
  • the direction orthogonal to the axial direction is referred to as the radial direction.
  • the rotating electrical machine unit 10 is mounted on a vehicle and generates power for driving the vehicle by being supplied with electric power from a battery.
  • the rotating electrical machine unit 10 functions as, for example, a motor (starter motor) for starting an engine.
  • the rotating electrical machine unit 10 functions as a generator (alternator) that generates electric power for charging the battery by being supplied with driving force from the engine.
  • the rotating electrical machine unit 10 is also referred to as an ISG (Integrated Starter Generator).
  • the rotating electrical machine unit 10 includes a housing 11, a stator 12, a rotor 13, a pulley 14, a slip ring 15, a brush 16, and a magnet 17 for detecting a rotation angle. Is equipped.
  • the housing 11 accommodates the stator 12 and the rotor 13.
  • the housing 11 rotatably supports the rotor 13.
  • a control device unit 20 is fixed to the rear side in the axial direction of the housing 11.
  • the housing 11 has a front housing 110 disposed on the front side in the axial direction and a rear housing 111 disposed on the rear side in the axial direction.
  • the stator 12 forms a part of a magnetic path and generates a rotating magnetic field by being supplied with electric power, specifically, alternating current. Further, by interlinking with the magnetic flux generated by the rotor 13, an alternating current is generated.
  • the stator 12 has a stator core 120 and a stator winding 121.
  • the stator core 120 has a substantially annular shape.
  • the stator core 120 is provided with a plurality of slots (not shown).
  • the stator winding 121 is accommodated in the slot of the stator core 120 and held by the stator core 120.
  • the stator winding 121 is wound around the stator core 120.
  • a Y-connected three-phase winding is used as the stator winding 121.
  • the stator winding 121 includes a stator winding 121a consisting of U-phase, V-phase, and W-phase three-phase windings, and X-phase, Y-phase, and Z-phase three-phase windings.
  • a stator winding 121b The stator windings 121a and 121b are arranged offset from each other by a predetermined electrical angle (for example, 30 °).
  • the rotor 13 constitutes a part of a magnetic path and forms a magnetic pole by being supplied with electric power, specifically, direct current.
  • the rotor 13 generates a rotational force by interlinking with the magnetic flux generated by the stator winding 121. Further, the rotor 13 is rotated by the driving force supplied from the engine, and the generated magnetic flux is interlinked with the stator winding 121, whereby the stator winding 121 generates an alternating current.
  • the rotor 13 has a rotor core 130, a rotor winding 131, a fan 132, and a rotating shaft 133.
  • the rotor core 130 has an annular hollow portion 130 a that accommodates the rotor winding 131.
  • the rotor core 130 has a through hole 130 b to which the rotating shaft 133 is fixed in a state of being inserted.
  • the rotor 13 is disposed such that the outer peripheral surface of the rotor core 130 faces the inner peripheral surface of the stator core 120 at a predetermined distance.
  • the rotor winding 131 generates a magnetic flux by being supplied with direct current, and forms a magnetic pole on the outer peripheral surface of the rotor core 130.
  • the rotor winding 131 is accommodated in the hollow portion 130 a of the rotor core 130 and held by the rotor core 130.
  • the rotor winding 131 is also referred to as a field winding.
  • the fan 132 is provided integrally with the rotor core 130.
  • the fan 132 rotates with the rotor core 130 and distributes the air outside the rotating electrical machine 1 to the inside of the rotating electrical machine unit 10 and the inside of the control device unit 20 through a through hole formed in the housing 11.
  • the fans 132 are respectively provided on both end surfaces of the rotor core 130 in the axial direction which is the extending direction of the rotating shaft 133.
  • the rotating shaft 133 is fixed to the rotor core 130 and rotatably supported by the housing 11.
  • the rotating shaft 133 rotates with the rotor core 130.
  • the rotation shaft 133 has a substantially cylindrical shape, and the axial center portion is fixed to the rotor core 130 in a state of being inserted into the through hole 130 b.
  • the rotation shaft 133 is also referred to as a shaft.
  • a portion of the rotation shaft 133 protrudes forward of the front housing 110 through a through hole provided in the bottom wall of the front housing 110.
  • the rotation shaft 133 is rotatably supported by the front housing 110.
  • a part of the rotation shaft 133 protrudes to the rear of the rear housing 111 through a through hole provided in the bottom wall of the rear housing 111.
  • the rotating shaft 133 is rotatably supported by the rear housing 111.
  • the pulley 14 is connected to a portion of the rotation shaft 133 that protrudes forward from the front housing 110.
  • the pulley 14 rotates with the rotation shaft 133.
  • a belt (not shown) is engaged with the pulley 14. The rotational movement of the rotating shaft 133 is transmitted to the crankshaft of the engine via the belt.
  • the slip ring 15 is fixed to an outer peripheral surface of a portion of the rotation shaft 133 which protrudes rearward from the rear housing 111 via an insulating member 18.
  • the slip ring 15 is a cylindrical member made of metal and is connected to the rotor winding 131 via a wire.
  • the brush 16 is, for example, pressed by a spring toward the rotating shaft 133 in the radial direction, and is in contact with the outer peripheral surface of the slip ring 15.
  • the brush 16 is held by a brush holder 160. Direct current is supplied to the rotor winding 131 via the brush 16 and the slip ring 15.
  • the magnet 17 generates a magnetic field for detecting the rotation angle of the rotor 13.
  • the magnet 17 is fixed to an axial rear end portion of the rotating shaft 133.
  • Control unit When the rotating electrical machine unit 10 functions as an alternator, the control device unit 20 converts the power generated by the rotating electrical machine unit 10 into direct current, and supplies the power to the battery. On the other hand, when the rotating electrical machine unit 10 is made to function as a motor, the power supplied from the battery is converted into an alternating current, and the power is supplied to the rotating electrical machine unit 10.
  • the controller unit 20 includes a case 21, a wiring board 22, an inverter circuit unit 23, a heat sink 24, a field circuit unit 25, a control circuit unit 26, and a bus bar 27. Is equipped. Furthermore, the control device unit 20 is provided with a rotation angle detection element (not shown) that constitutes a rotation angle detection unit together with the magnet 17.
  • the controller unit 20 may include a smoothing capacitor and a snubber capacitor.
  • the case 21 is provided at an axial rear end of the rear housing 111.
  • the case 21 is formed in a box shape using a resin material.
  • the wiring board 22, the inverter circuit unit 23, the heat sink 24, the field circuit unit 25, the control circuit unit 26, the above-described brush 16 and the like are accommodated.
  • the case 21 has a main body portion 210 and a lid portion 211.
  • the wiring board 22, the inverter circuit unit 23, the field circuit unit 25, and the control circuit unit 26 are fixed to the main body unit 210.
  • the bus bar 27 and other bus bars for wiring are fixed to the main body portion 210 which is a resin member.
  • the main body portion 210 has a through hole 210 a at the central portion.
  • the main body portion 210 is fixed to an axial rear end portion of the rear housing 111.
  • the lid portion 211 covers the rear side of the main body portion 210.
  • the wiring board 22 is a so-called printed board.
  • the field circuit unit 25 and the control circuit unit 26 are mounted on the wiring board 22.
  • a power supply circuit and the like are also mounted on the wiring board 22.
  • the wiring substrate 22 is disposed such that the thickness direction thereof substantially coincides with the axial direction.
  • the wiring board 22 is substantially U-shaped with a notch at a part in the circumferential direction of the rotating shaft 133.
  • the wiring board 22 is disposed on the front side in the axial direction with respect to the inverter circuit portion 23 at a distance from the rear housing 111 and the inverter circuit portion 23.
  • the wiring substrate 22, the inverter circuit unit 23, the field circuit unit 25, and the control circuit unit 26 are sealed with a resin 28 in the case 21.
  • the inverter circuit unit 23 supplies alternating current to the stator winding 121.
  • the inverter circuit unit 23 rectifies alternating current supplied from the stator winding 121 and converts it into direct current.
  • the inverter circuit unit 23 is configured by three semiconductor modules 40. Details of the semiconductor module 40 will be described later, and only a brief description will be given here.
  • each of the semiconductor modules 40 has a plurality of switching elements 70 constituting upper and lower arms for two phases.
  • the switching element 70 a MOSFET or an IGBT can be employed. In the present embodiment, an n-channel MOSFET is employed.
  • the switching element 70 has a parasitic diode.
  • the first semiconductor module 40 constitutes upper and lower arms of U phase and V phase
  • the second semiconductor module 40 constitutes upper and lower arms of W phase and X phase
  • the third semiconductor A module 40 constitutes upper and lower arms of Y phase and Z phase.
  • each arm is configured by one switching element 70. That is, the semiconductor module 40 has four switching elements 70 each.
  • the switching element 70 As the switching element 70, the switching element 700H on the upper arm side and the switching element 700L on the lower arm side constituting the first upper and lower arms, and the switching on the upper arm side constituting the second upper and lower arm It has the element 701H and the switching element 701L on the lower arm side. Switching elements 700H and 700L are connected in series, and switching elements 701H and 701L are connected in series.
  • the high potential side electrode of the upper arm side switching elements 700H and 701H, ie, the drain electrode, is connected to the positive electrode side of the battery, and the low potential side electrode of the lower arm side switching elements 700L and 701L, ie, the source electrode is It is connected to the negative side of the battery.
  • the source electrodes of the upper arm side switching elements 700H and 701H and the corresponding drain electrodes of the lower arm side switching elements 700L and 701L are connected to each other.
  • the first upper and lower arms constitute U-phase upper and lower arms
  • the second upper and lower arms constitute V-phase upper and lower arms.
  • the connection point between the switching element 700H and the switching element 700L is connected to the U phase of the stator winding 121a.
  • the connection point between the switching element 701H and the switching element 701L is connected to the V phase of the stator winding 121a.
  • the first upper and lower arms constitute a W-phase upper and lower arm
  • the second upper and lower arms constitute an X-phase upper and lower arm.
  • the connection point between the switching element 700H and the switching element 700L is connected to the W phase of the stator winding 121a.
  • the connection point between the switching element 701H and the switching element 701L is connected to the X phase of the stator winding 121b.
  • the first upper and lower arms constitute Y phase upper and lower arms
  • the second upper and lower arms constitute Z phase upper and lower arms.
  • the connection point between the switching element 700H and the switching element 700L is connected to the Y phase of the stator winding 121b.
  • the connection point between the switching element 701H and the switching element 701L is connected to the Z phase of the stator winding 121b.
  • the semiconductor module 40 has a main terminal 63 as an external connection terminal as shown in FIGS. 4 and 5. Also, as the main terminals 63, positive electrode terminals 63B1 and 63B2, negative electrode terminals 63E1 and 63E2, and output terminals 63P1 and 63P2 are provided. Each of the semiconductor modules 40 is disposed on the rear side in the axial direction of the wiring board 22.
  • the heat sink 24 is a metal member that radiates the heat generated by the semiconductor module 40.
  • the heat sink 24 has a main body 240 and a plurality of fins 241.
  • the main body portion 240 has a substantially rectangular parallelepiped shape, and the fins 241 project from the surface of the main body portion 240 opposite to the semiconductor module 40.
  • the heat sink 24 is insert-molded on the main body portion 210 of the case 21. In the state of being integrated with the main body portion 210, one surface of the main body portion 240 is exposed in the main body portion 210, and the fin 241 protrudes from the opposite surface.
  • the semiconductor module 40 is in contact with one surface of the main body 240.
  • the heat sink 24 is thermally connected to the semiconductor module 40. For example, a thermally conductive adhesive is interposed between the heat sink 24 and the semiconductor module 40.
  • the field circuit unit 25 is a circuit that supplies DC to the rotor winding 131.
  • the field circuit unit 25 has a switching element.
  • an H bridge circuit is configured by switching elements.
  • the switching element is mounted on the wiring board 22.
  • the control circuit unit 26 is a circuit that controls the inverter circuit unit 23 and the field circuit unit 25.
  • Control circuit unit 26 includes, for example, a microcomputer (microcomputer).
  • the control circuit unit 26 includes, for example, a drive circuit that generates a drive signal of each of the switching elements 70.
  • the drive circuit performs, for example, PWM control of the switching element 70 by a 120-degree conduction method.
  • the drive circuit outputs the generated drive signal to a drive unit 80 described later.
  • the control circuit unit 26 has a current detection circuit that detects the current flowing in each phase based on the voltage value proportional to the current flowing in each phase detected by the shunt resistor 901. The current detection circuit detects the current of each phase via the signal terminal 64 without passing through the drive unit 80.
  • the control circuit unit 26 includes an abnormality detection circuit that detects an abnormality of the switching element 70 based on a notification signal transmitted from the drive unit 80.
  • the control circuit unit 26 has a temperature detection circuit that acquires the forward voltage Vf of the temperature sensing diode integrally formed with the switching element 70 and detects the temperature of the switching element 70. The temperature detection circuit obtains the forward voltage Vf via the drive unit 80.
  • the bus bar 27 is a wiring member connected to the inverter circuit unit 23.
  • the bus bar 27 is insert-molded in the main body portion 210 of the case 21 in a state where the connection portion 270 with the inverter circuit portion 23 is exposed.
  • the bus bar 27 is insert-molded in the main body portion 210 in a state of extending axially forward.
  • the connection portion 270 extends in the same direction as the main terminal 63 in a state adjacent to the corresponding main terminal 63 of the semiconductor module 40. And the adjacent connection part 270 and the main terminal 63 are joined. Specifically, the main terminal 63 and the bus bar 27 are joined by arc welding.
  • the bus bar 27 includes a positive electrode bus bar 27B, a negative electrode bus bar 27E, and output bus bars 27P1 and 27P2.
  • the positive electrode bus bar 27B and the negative electrode bus bar 27E are disposed on the rotary shaft 133 side, ie, the radial inner side with respect to the semiconductor module 40, and the output bus bar 27P1 on the opposite side to the rotary shaft 133, ie, the radial outer side. , 27P2 are arranged.
  • FIG. 4 the positive electrode bus bar 27B and the negative electrode bus bar 27E are disposed on the rotary shaft 133 side, ie, the radial inner side with respect to the semiconductor module 40, and the output bus bar 27P1 on the opposite side to the rotary shaft 133, ie, the radial outer side. , 27P2 are arranged.
  • the positive electrode bus bar 27B is shown inside the negative electrode bus bar 27E for the sake of simplicity in order to clearly show the connection between the positive electrode bus bar 27B and the negative electrode bus bar 27E and the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2.
  • the positive electrode bus bar 27B is a bus bar 27 that connects the power supply connection portion of the wiring board 22 and the positive electrode terminals 63B1 and 63B2 of the semiconductor module 40 to the positive electrode terminal of the battery.
  • the negative bus bar 27E is a bus bar 27 that connects the power supply connection portion of the wiring board 22 and the negative terminals 63E1 and 63E2 of the semiconductor module 40 directly to the negative terminal of the battery or via the vehicle body.
  • the output bus bar 27P1 is a bus bar 27 that connects the output terminal 63P1 of the semiconductor module 40 to the stator winding 121.
  • the output bus bar 27P2 is a bus bar 27 that connects the output terminal 63P2 to the stator winding 121.
  • the positive electrode bus bar 27B and the negative electrode bus bar 27E are formed, for example, by punching and bending a copper plate.
  • the positive bus bar 27 ⁇ / b> B and the negative bus bar 27 ⁇ / b> E are mutually insulated by the case 21.
  • the positive electrode bus bar 27B exposes the connection portion connected to the wiring board 22 and the connection portion 270 with the positive electrode terminals 63B1 and 63B2 of each semiconductor module 40 to the inside of the case 21 and the connection portion 271 on the battery side It is insert-molded in the case 21 in the state which exposed to the exterior of.
  • the negative bus bar 27E exposes the connecting portion connected to the wiring board 22 and the connecting portion 270 with the negative terminals 63E1 and 63E2 of each semiconductor module 40 to the inside of the case 21, and the connecting portion 272 on the battery side It is insert-molded in the case 21 in the state which exposed to the exterior of.
  • connection portion 271 on the battery side of the positive electrode bus bar 27B and the connection portion 272 on the battery side of the negative electrode bus bar 27E are disposed on the cutout side of the wiring board 22.
  • Two connection portions 271 of the positive electrode bus bar 27B are provided.
  • the two connection parts 271 are connected to each other.
  • One connection portion 272 of the negative electrode bus bar 27E is provided.
  • the connection portion 272 is provided radially outward at an equal distance from the two connection portions 271.
  • the positive electrode bus bar 27 B extends from each of the two connection portions 271.
  • the positive electrode bus bar 27 B extends in parallel to a plane orthogonal to the rotation axis 133.
  • the positive electrode bus bars 27B are arranged in line symmetry with respect to an imaginary line passing through the midpoints of the two connection portions 271 and the center of the rotation shaft 133.
  • one of the positive electrode bus bars 27B extends in the clockwise direction around the rotation axis 133
  • the other positive electrode bus bar 27B extends in the counterclockwise direction around the rotation axis 133.
  • the positive electrode bus bar 27B has an opening on the opposite side to the middle point of the two connection portions 271 with the rotary shaft 133 interposed therebetween.
  • the pair of positive electrode bus bars 27B are separated from each other through the opening without being connected to each other at positions opposite to each other with respect to the middle point of the two connection portions 271 with respect to the rotation shaft 133.
  • the negative bus bar 27 ⁇ / b> E also extends parallel to the plane orthogonal to the rotation axis 133.
  • the negative bus bar 27E is branched into two at the end extending from the connection portion 272 on the battery side toward the rotation shaft 133, one extending clockwise around the rotation shaft 133, and the other counterclockwise around the rotation shaft 133 It extends to
  • the negative bus bar 27 ⁇ / b> E is arranged in line symmetry with respect to an imaginary line passing through the connection portion 272 and the center of the rotating shaft 133.
  • the negative electrode bus bar 27 ⁇ / b> E has an opening on the opposite side to the connecting portion 272 with the rotating shaft 133 interposed therebetween.
  • the branched negative electrode bus bar 27E is separated from the connecting portion 272 via the opening without being connected to each other at the opposite side of the rotary shaft 133.
  • the positive electrode bus bar 27B and the negative electrode bus bar 27E are arranged along each other.
  • the positive electrode bus bar 27B and the negative electrode bus bar 27E are separated in a state in which a predetermined distance is maintained in the radial direction over substantially the entire area of the portions extending along each other.
  • currents flow in opposite directions to each other. Therefore, the inductance can be reduced.
  • the positive electrode bus bar 27B extended in the counterclockwise direction includes positive electrode terminals 63B1 and 63B2 of the semiconductor module 40 constituting upper and lower arms of U phase and V phase, and W phase
  • the positive electrode terminal 63B1 corresponding to the upper and lower arms of the W phase among the semiconductor modules 40 constituting the upper and lower arms of the X phase is connected.
  • the negative electrode bus bar 27E extended counterclockwise the negative terminals 63E1 and 63E2 of the semiconductor module 40 constituting the U-phase and V-phase upper and lower arms and the semiconductor module 40 constituting the W-phase and X-phase upper and lower arms Among them, the negative electrode terminal 63E1 corresponding to the W-phase upper and lower arms is connected.
  • positive electrode bus bar 27B extended clockwise positive electrode terminal 63B2 corresponding to upper and lower arms of X phase among semiconductor modules 40 constituting upper and lower arms of W phase and X phase, Y phase and Z phase
  • the positive terminals 63B1 and 63B2 of the semiconductor module 40 constituting the upper and lower arms are connected.
  • the negative electrode bus bar 27E extended clockwise the negative electrode terminal 63E2 corresponding to the upper and lower arms of the X phase among the semiconductor modules 40 constituting the upper and lower arms of the W phase and the X phase, and the upper and lower sides of the Y phase and the Z phase.
  • the negative terminals 63E1 and 63E2 of the semiconductor module 40 constituting the arm are connected.
  • the three semiconductor modules 40 include the semiconductor module 40 configuring the U-phase and V-phase upper and lower arms, the semiconductor module 40 configuring the W-phase and X-phase upper and lower arms, and the Y-phase and Z-phase upper and lower arms
  • the semiconductor modules 40 to be configured are arranged around the rotation axis 133 in the order.
  • direct current is supplied to the inverter circuit unit 23 through the positive electrode bus bar 27B, the negative electrode bus bar 27E, and the like. Further, direct current is supplied to the field circuit unit 25 and the control circuit unit 26 through the other bus bars for wiring and the wiring board 22.
  • Control circuit unit 26 controls inverter circuit unit 23 and field circuit unit 25 based on a signal input from the outside, for example, an engine ECU.
  • the field circuit unit 25 is controlled by the control circuit unit 26 and supplies direct current to the rotor winding 131 via the brush 16 and the slip ring 15.
  • the inverter circuit unit 23 is controlled by the control circuit unit 26, and converts direct current supplied via the positive electrode bus bar 27B and the negative electrode bus bar 27E into alternating current.
  • the control circuit unit 26 controls the on / off of the switching element 70 to sequentially switch the flowing direction of the current, thereby converting direct current into alternating current.
  • the alternating current converted by the inverter circuit unit 23 is supplied to the stator winding 121 via the output bus bars 27P1 and 27P2.
  • the rotating electrical machine unit 10 generates a driving force to drive the vehicle.
  • the rotational state of the rotor 13 is detected by the rotational angle detection element. Further, the shunt resistor 901 provided in the semiconductor module 40 detects the current flowing in each phase of the stator winding 121. The control circuit unit 26 controls the rotation of the rotary electric machine 1 using these detected values.
  • the stator windings 121a and 121b are alternating current (3 Phase exchange).
  • the inverter circuit unit 23 is controlled by the control circuit unit 26, and converts alternating current supplied from the stator winding 121 via the output bus bars 27P1 and 27P2 into direct current.
  • the control circuit unit 26 controls the on / off of the switching element 70 to sequentially switch the flowing direction of the current to rectify the alternating current. During the dead time of the switching element 70, alternating current is rectified by the parasitic diode.
  • the direct current converted by the inverter circuit unit 23 is supplied to the battery. Thereby, the battery is charged by the power generated by the rotating electrical machine unit 10.
  • the thickness direction of the switching element 70 is orthogonal to the Z direction and the Z direction, and the arrangement direction of the plurality of signal terminals 64 is referred to as the X direction. Further, a direction orthogonal to both the Z direction and the X direction is referred to as a Y direction.
  • the shape when viewed in the XY plane is a plane shape.
  • XY plane view can be said to be projection view in the Z direction.
  • the Z direction substantially coincides with the axial direction. Further, a position near the center of the lead frame 60 in the X direction is indicated as inside, and a position far from the center is indicated as outside. Further, in the Z direction, the direction from the back surface 50b to the one surface 50a of the sealing resin body 50 is referred to as upper, and the direction from the one surface 50a to the back 50b is as lower.
  • the semiconductor module 40 includes a sealing resin body 50, a lead frame 60, a switching element 70, a drive unit 80, and a bridge member 90.
  • the sealing resin body 50 is omitted.
  • the switching element 70, the drive unit 80, and the cross-linking member 90 are mounted, and the lead frame 60 before the molding of the sealing resin body 50, that is, before the tie bar cut is shown.
  • the bonding wires 41 are omitted for the sake of convenience.
  • the semiconductor module 40 is also referred to as a semiconductor package, a switching module, or a semiconductor device.
  • sealing resin body 50 integrally seals a part of the lead frame 60, the switching element 70, the driving unit 80, and the bridging member 90.
  • Sealing resin body 50 is formed using, for example, an epoxy resin.
  • the sealing resin body 50 has a surface 50a which is a surface in the Z direction, a back surface 50b opposite to the surface 50a, and a side surface connecting the surface 50a and the back surface 50b.
  • the semiconductor module 40 is disposed such that the back surface 50 b side of the sealing resin body 50 is in contact with the heat sink 24.
  • the sealing resin body 50 is a substantially rectangular parallelepiped, and has four side surfaces.
  • a main terminal 63 and a signal terminal 64 protrude from a side surface 50c which is a first side surface in the Y direction and a side surface 50d which is a second side surface opposite to the side surface 50c.
  • the sealing resin body 50 is formed by transfer molding. As shown in FIGS. 6 and 7 etc., the sealing resin body 50 has a recess 51.
  • the recess 51 is open to the one surface 50 a and the side surface 50 c.
  • the bottom surface of the recess 51 is substantially flat.
  • the two concave portions 51 are provided corresponding to the positive electrode terminals 63B1 and 63B2.
  • the concave portion 51 is provided at a position overlapping the corresponding positive electrode terminals 63B1 and 63B2 in the projection view from the Z direction.
  • the recess 51 is provided such that a part of the jig can be inserted.
  • the sealing resin body 50 has a convex portion 52 derived from an air vent provided in a molding die not shown.
  • the convex portion 52 protrudes from the side surfaces 50c and 50d.
  • the air vents are provided on the upper and lower molds constituting the mold in order to reduce voids and weld lines caused by air entrainment at the time of molding.
  • the air vents are provided at positions overlapping with the main terminals 63 in the projection view from the Z direction at the portions forming the side surfaces 50 c and 50 d of the upper and lower dies. Therefore, the main terminal 63 is disposed between the protrusions 52 in the Z direction.
  • Reference numeral 53 shown in FIGS. 6 to 8 denotes pin marks derived from ejector pins.
  • Reference numeral 54 shown in FIGS. 6 and 7 denotes a gate mark of a mold.
  • the lead frame 60 is a plate made of metal.
  • the lead frame 60 is formed by punching and bending a metal plate.
  • the lead frame 60 includes an island 61, a wiring portion 62, a main terminal 63 and a signal terminal 64 which are terminals for external connection, and a dummy terminal 65.
  • the lead frame 60 is substantially line symmetrical with respect to the center in the X direction. In FIG. 21, the center of the lead frame 60 in the X direction is indicated by an alternate long and short dash line.
  • the switching element 70 and the drive unit 80 are disposed on the island 61.
  • the lead frame 60 has five islands 610 to 614 in which the switching element 70 and the driving unit 80 are individually disposed.
  • the islands 610 to 614 have substantially the same thickness and are arranged in the same plane in the Z direction.
  • the islands 610 to 614 are arranged in line symmetry with respect to the center in the X direction.
  • the island 610 is a portion where the drive unit 80 is disposed.
  • the islands 611 to 614 are portions where the switching element 70 is disposed and to which the drain electrode of the disposed switching element 70 is connected.
  • the switching element 700 H is disposed on the island 611, and the switching element 700 L is disposed on the island 612.
  • the switching element 701 H is disposed on the island 613, and the switching element 701 L is disposed on the island 614.
  • the areas of the islands 611 to 614 along the XY plane are substantially equal to one another.
  • the heat release surface 610 a opposite to the arrangement surface of the drive unit 80 is exposed from the back surface 50 b of the sealing resin body 50.
  • the heat radiation surfaces 611a to 614a opposite to the arrangement surface of the switching element 70 are exposed from the back surface 50b.
  • the portion of the island 61 excluding the heat radiation surfaces 610a to 614a is sealed by a sealing resin body 50.
  • the convex part is provided in the side of each island 61. As shown in FIG.
  • the island 610 has a substantially rectangular planar shape.
  • the island 610 is disposed at the center of the lead frame 60 in the X direction.
  • the island 610 as shown in FIG. 16 and FIG. 21, etc., has a convex portion 610b that protrudes in the Y direction from the center of the end opposite to the signal terminal 64.
  • the convex portion 610b may be provided at a position not interfering with the bonding wire 41. For example, when the distance between the pads 71 of the switching elements 700H and 701H is shorter than that of the present embodiment, the convex portions 610b may be provided at both ends instead of the center.
  • the islands 611 to 614 are disposed around the island 610.
  • the islands 612 and 614 in which the lower arm side switching elements 700L and 701L are disposed are provided so as to sandwich the island 610 in the X direction.
  • the islands 612 and 614 are arranged in line symmetry with each other in the X direction.
  • the islands 612 and 614 both have a substantially rectangular planar shape.
  • the islands 612 and 614 each have a predetermined gap with the island 610 in the X direction.
  • the islands 611 and 613 in which the switching elements 700H and 701H on the upper arm side are disposed are provided on the side opposite to the signal terminal 64 in the Y direction with respect to the island 610.
  • the islands 611 and 613 are arranged side by side in the X direction with a predetermined gap.
  • the islands 611 and 613 are arranged in line symmetry with each other in the X direction.
  • the islands 611 and 613 both have a substantially rectangular planar shape.
  • the island 611 faces the islands 610 and 612 in the Y direction.
  • the island 613 faces the islands 610 and 614 in the Y direction.
  • the islands 611 and 613 have convex portions 611 b and 613 b protruding in the Y direction from the end on the signal terminal 64 side, as shown in FIGS.
  • the convex portions 611 b and 613 b are provided to face the island 610 in the Y direction.
  • the convex portion 611 b is provided at the end on the island 613 side in the X direction.
  • the bonding wire 41 is connected to a position away from the island 613 in the convex portion 611 b.
  • the bonding wire 41 is connected to detect the drain potential of the switching element 700H.
  • the convex portion 613 b is provided at the end on the island 611 side in the X direction.
  • the bonding wire 41 is connected to a position away from the island 611 in the convex portion 613 b.
  • the bonding wire 41 is connected to detect the drain potential of the switching element 701H.
  • the wiring portion 62 includes a wiring portion 620 connecting the islands 611 and 612, a wiring portion 621 connecting the island 612 and the negative electrode terminal 63E1, a wiring portion 622 connecting the islands 613 and 614, an island 614 and the negative electrode terminal 63E2.
  • a wiring portion 623 to be connected is provided.
  • the wiring portion 620 is connected to the end of the island 612 opposite to the signal terminal 64.
  • the wiring portion 620 is connected to the end of the island 612 opposite to the island 610 side.
  • the wiring portion 620 is extended in the Y direction, and its tip portion is arranged in parallel with the island 611 while having a predetermined gap with the island 611 in the X direction.
  • the wiring portion 620 is disposed outside the island 611 in the X direction.
  • the wiring portion 621 is connected to the negative electrode terminal 63E1.
  • the wiring portion 621 extends from the negative electrode terminal 63E1 in the Y direction, and its tip end portion is disposed side by side with the island 612 while having a predetermined gap with the island 612 in the X direction.
  • the wiring portion 621 is disposed outside the island 612 in the X direction.
  • the wiring portion 622 is connected to the end of the island 614 opposite to the signal terminal 64.
  • the wiring portion 622 is connected to the end of the island 614 opposite to the island 610 side.
  • the wiring portion 622 is extended in the Y direction, and the tip portion thereof is disposed in parallel with the island 613 while having a predetermined gap with the island 613 in the X direction.
  • the wiring portion 622 is disposed outside the island 613 in the X direction.
  • the wiring portion 623 is connected to the negative electrode terminal 63E2.
  • the wiring portion 623 extends from the negative electrode terminal 63E2 in the Y direction, and its tip end portion is disposed side by side with the island 614 while having a predetermined gap with the island 614 in the X direction.
  • the wiring portion 623 is disposed outside the island 614 in the X direction.
  • the wiring portion 621, the island 612, the island 610, the island 614, and the wiring portion 623 are arranged in this order in the X direction. Further, at the positions of the islands 611 and 613 in the Y direction, the wiring portion 621, the wiring portion 620, the island 611, the island 613, the wiring portion 622, and the wiring portion 623 are sequentially arranged in the X direction.
  • the wiring portions 620 and 621 on the upper arm side and the wiring portions 622 and 623 on the lower arm side are arranged in line symmetry in the X direction.
  • the heat radiation surfaces 620a to 623a opposite to the arrangement surface of the cross-linking member 90 are exposed from the back surface 50b of the sealing resin body 50.
  • the heat radiation surfaces 620a to 623a are surfaces opposite to the surface on the switching element 70 side.
  • heat can be dissipated from the heat dissipation surfaces 620a to 623a.
  • the portions excluding the heat dissipation surfaces 620 a to 623 a are sealed by the sealing resin body 50.
  • the heat radiation surfaces 610a to 614a and 620a to 623a are exposed from the back surface 50b by bringing the heat radiation surfaces 610a to 614a and 620a to 623a into contact with the molding die.
  • the convex part is provided in the side of each wiring part 62. As shown in FIG. 12 etc., in order to suppress peeling of the sealing resin body 50, the convex part is provided in the side of each wiring part 62. As shown in FIG.
  • the portions of the island 61 and the wiring portion 62 are thicker than the portions of the main terminal 63, the signal terminal 64 and the dummy terminal 65.
  • the central portion of the lead frame 60 is thicker than the central portion. Between the broken lines shown in FIG. 21 are thick portions.
  • the heat of the switching element 70 and the drive unit 80 can be dissipated efficiently.
  • the island 61 and the wiring portion 62 are thick, it is possible to suppress the warpage of the lead frame 60 due to the cure shrinkage of the sealing resin body 50.
  • the main terminal 63 and the signal terminal 64 which are terminals for external connection are made thin, punching and bending workability can be improved.
  • the signal terminals 64 can be narrowed in pitch.
  • the main terminal 63 has the positive electrode terminals 63B1 and 63B2, the negative electrode terminals 63E1 and 63E2, and the output terminals 63P1 and 63P2.
  • the positive electrode terminals 63B1 and 63B2 are power supply terminals connected to the positive electrode side of the battery.
  • the positive electrode terminals 63B1 and 63B2 are also referred to as high potential side DC terminals.
  • the positive electrode terminal 63B1 is continuous with the island 611 of the switching element 700H.
  • the positive electrode terminal 63B1 is continued to the end of the island 611 opposite to the island 613 side.
  • the positive electrode terminal 63B1 extends from the end of the island 611 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c of the sealing resin body 50, is bent outside the sealing resin body 50, and extends in the Z direction. It extends upward.
  • the positive electrode terminal 63B2 is connected to the island 613 of the switching element 701H.
  • the positive electrode terminal 63B2 is connected to the end of the island 613 opposite to the island 611 side.
  • the positive electrode terminal 63B2 extends from the end of the island 613 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the positive terminals 63B1 and 63B2 are arranged in line symmetry with each other in the X direction.
  • Negative electrode terminals 63E1 and 63E2 are power supply terminals connected to the negative electrode side of the battery.
  • the negative electrode terminals E1 and E2 are also referred to as low potential side DC terminals.
  • the negative electrode terminal 63E1 is disposed outside the positive electrode terminal 63B1 in the X direction.
  • the negative electrode terminal 63E1 extends in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the negative electrode terminal 63E2 is disposed outside the positive electrode terminal 63B2 in the X direction.
  • the negative electrode terminal 63E2 is extended in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the negative terminals 63E1 and 63E2 are arranged in line symmetry with each other in the X direction.
  • the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are arranged in the order of the negative electrode terminal 63E1, the positive electrode terminal 63B1, the positive electrode terminal 63B2 and the negative electrode terminal 63E2 in the X direction.
  • the distance between the negative electrode terminal 63E1 and the positive electrode terminal 63B1 and the distance between the negative electrode terminal 63E2 and the positive electrode terminal 63B2 are shorter than the distance between the positive electrode terminals 63B1 and 63B2.
  • the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are substantially L-shaped in the YZ plane.
  • the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 respectively have tie bar marks 66a and 66b as shown in FIG. 7, FIG. 9, FIG. 14 and FIG.
  • the tie bar marks 66a and 66b are cut marks of the tie bar 66 and slightly protrude in the X direction.
  • the tie bar mark 66a is a cut mark of a first tie bar 660a closer to the island 61 in the Y direction
  • the tie bar mark 66b is a cut mark of a second tie bar 660b farther from the island 61 than the tie bar 660a.
  • the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 have bent portions between the tie bar marks 66a and 66b in the extending direction.
  • the output terminals 63P1 and 63P2 are also referred to as AC terminals.
  • the output terminal 63P1 is connected to the island 612.
  • the output terminal 63P1 is continuous with the end of the island 612 opposite to the island 610, and is extended obliquely to be apart from the island 612 in the X direction. Specifically, it is obliquely extended to a position not overlapping the switching element 700L in the X direction. Then, the tip is extended in the Y direction, protrudes from the side surface 50d opposite to the positive electrode terminal 63B1, is bent outside the sealing resin body 50, and extends further in the Z direction.
  • the output terminal 63P2 is connected to the island 614.
  • the output terminal 63P2 is continuous with the end of the island 614 opposite to the island 610, and is extended diagonally so as to be apart from the island 614 in the X direction. Specifically, it is obliquely extended to a position not overlapping the switching element 701L in the X direction. Then, it is extended in the Y direction at the tip thereof, protrudes from the side surface 50d, is bent outside the sealing resin body 50, and further extends upward in the Z direction.
  • the output terminals 63P1 and 63P2 are also substantially L-shaped in the YZ plane.
  • the output terminals 63P1 and 63P2 are arranged in line symmetry with each other in the X direction.
  • the output terminals 63P1 and 63P2 also have tie bar marks 66a and 66b, respectively.
  • the tie bar mark 66a is a cut mark of the first tie bar 661a closer to the island 61 in the Y direction
  • the tie bar mark 66b is a cut mark of the second tie bar 661b farther from the island 61 than the tie bar 661a.
  • the output terminals 63P1 and 63P2 have bending portions between the tie bar marks 66a and 66b in the extending directions.
  • the width of the bent portion is narrowed.
  • a narrow portion 63a is provided so as to include the bent portion, and a wide portion is provided so as to sandwich the narrow portion 63a in the extending direction.
  • the portions having the tie bar marks 66a and 66b are wide portions, and a narrow portion 63a including a bent portion is provided therebetween.
  • the width of the portion forming the bent portion is narrowed to reduce the rigidity, so that the bending load at the time of forming the bent portion can be reduced. Also, the bending accuracy can be improved.
  • the corner portion of the projecting tip is chamfered. In other words, it has a tapered shape.
  • a relatively large current tens of amps
  • the main terminal 63 flows to the main terminal 63 in order to rotate the rotating electrical machine 1, so the width of the main terminal 63 is wide.
  • welding can be stably performed at the center in the width direction.
  • the signal terminal 64 is a terminal for outputting a signal to the outside or inputting a signal from the outside.
  • the plurality of signal terminals 64 are arranged side by side in the X direction.
  • Each signal terminal 64 is extended in the Y direction, protrudes from the side surface 50d, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the signal terminal 64 is also substantially L-shaped in the YZ plane. In the present embodiment, the signal terminals 64 are inserted into and mounted on the wiring board 22.
  • the signal terminal 64 includes a signal terminal 640 connected to the wiring board 22 and set to the ground potential (GND).
  • the signal terminal 640 is disposed in the middle of the plurality of signal terminals 64.
  • the signal terminal 640 is continuous with the center of the end of the island 610 on the signal terminal 64 side.
  • the signal terminal 640 is disposed at the center of the lead frame 60 in the X direction.
  • the signal terminal 640 is connected to the pad 81 of the drive unit 80 by the bonding wire 41.
  • the bonding wire 41 is connected to the wiring portions 621 and 623 connected to the negative terminals 63E1 and 63E2 and the negative terminals 63E1 and 63E2 without securing the ground potential. Good. That is, the bonding wires 41 may not be connected across the other potential parts such as the islands 612 and 614 and the wiring parts 620 and 622. Therefore, the bonding wire 41 can be prevented from coming into contact with other potential parts to cause a short circuit.
  • the signal terminal 64 includes two signal terminals 641.
  • One of the signal terminals 641 is continuous with the end of the island 612 on the signal terminal 64 side, and the other signal terminal 641 is continuous with the end of the island 614 on the signal terminal 64 side.
  • the island 612 is connected to the source electrode 72 of the switching element 700H via the wiring portion 620 and the clip 900.
  • the island 614 is connected to the source electrode 72 of the switching element 701H via the wiring portion 622 and the clip 900.
  • the wiring portion 620 and the island 612 are wires that connect the source electrode 72 of the switching element 700H and the output terminal 63P1.
  • the wiring portion 622 and the island 614 are wires that connect the source electrode 72 of the switching element 701H and the output terminal 63P2.
  • a drive source potential for driving which is a reference of the drive signal on the upper arm side is supplied from the drive circuit of the control circuit unit 26. Therefore, the inductance of the wiring can be reduced compared to the configuration in which the source potential is supplied from the output terminals 63P1 and 63P2. Thereby, the controllability of the switching element 70 by the control circuit unit 26 can be improved, and the delay of switching can be suppressed.
  • the drive source potential serving as the reference of the lower arm side drive signal from the drive circuit of the control circuit unit 26 is connected to the signal terminal 64 connected to the high potential side of the shunt resistor 901 via the bonding wire 41. Supplied.
  • the semiconductor module 40 has fifteen signal terminals 64. As described above, one is a signal terminal 640 for the ground potential, and two are signal terminals 641 for the source potential on the upper arm side. Of the remaining twelve, four are for drive signals of the switching elements 70, and four are for two shunt resistors 901. One is for acquiring the power supply VCC (for example, 5 V) from the wiring substrate 22 side, and one is for output of any one forward voltage Vf of the temperature sensitive diodes. One is for notification of abnormality or the like, and one is a spare to which the bonding wire 41 is not connected.
  • VCC for example, 5 V
  • the signal terminal 64 excluding the signal terminal 640 has at least one crank portion 64a which is a crank-shaped portion.
  • the crank portion 64a By having the crank portion 64a, the width occupied by the plurality of signal terminals 64 in the X direction is narrowed on the connection side with the wiring substrate 22 than the end on the island 61 side, that is, the connection side of the bonding wire 41 ing.
  • the position of the cranks 64a is set such that the length of the straight portion between the cranks 64a is 2 mm or more.
  • One of the crank portions 64a is provided in the vicinity of the tie bar 661a, and the other crank portion 64a is provided in the vicinity of the tie bar 661b.
  • the mounting portions of the signal terminals 64 on the wiring board 22 are arranged in a zigzag in the XY plane. That is, the signal terminals 64 adjacent to each other in the X direction are shifted in the Y direction.
  • the signal terminals 64 are arranged in two stages. Thus, the space occupied by the signal terminals 64 in the X direction can be reduced, and the semiconductor module 40 can be miniaturized.
  • the wiring substrate 22 can also be miniaturized. Furthermore, since the adjacent signal terminals 64 are spaced apart in the Y direction, noise and interference between the terminals can be reduced.
  • the signal terminal 64 is disposed between the output terminals 63P1 and 63P2 in the X direction.
  • FIG. 22 is a schematic view showing an arrangement image of the output terminals 63P1 and 63P2 and the signal terminal 64. As shown in FIG. The upper part of FIG. 22 shows the present embodiment, and the middle part and the lower part show reference examples. In the reference example, r is added to the end of the reference numerals of the relevant elements of this embodiment.
  • the signal terminals 64 are integrated between the output terminals 63P1 and 63P2.
  • Output terminals 63P1 and 63P2 are disposed at both ends of the signal terminal 64 in the X direction. Therefore, a vacant space 64b indicated by a broken line is generated between the output terminal 63P1 and the signal terminal 64 at one end, and a space 64b is similarly generated between the output terminal 63P2 and the signal terminal 64 at the other end. .
  • the output terminal 63P1r is disposed in the same manner as in the present embodiment, the output terminal 63P2r is disposed between the signal terminals 64r, and the plurality of signal terminals 64r are divided into two. According to this, spaces 64br are generated on both sides of the output terminal 63P2r. Further, in the lower reference example, the output terminals 63P1r and 63P2r are disposed adjacent to each other, and the plurality of signal terminals 64r are divided into two by the output terminals 63P1r and 63P2r. According to this, spaces 64br are generated on both sides of each of the output terminals 63P1r and 63P2r.
  • the arrangement space for the external connection terminals can be reduced in the X direction. That is, waste space can be reduced and the size of the semiconductor module 40 can be miniaturized.
  • the end of the signal terminal 64 on the island 61 side that is, the connection portion of the bonding wire 41 is wider in the X direction than the other portions of the signal terminal 64. .
  • the bonding wire 41 can be stably connected.
  • the width of the part excluding the connection part with the bonding wire 41 is narrow, the arrangement space of the signal terminal 64 can be made small in combination with the above-mentioned crank part 64a.
  • the end on the side of the wide island 61 is caught by the sealing resin body 50, it is possible to suppress the removal of the signal terminal 64 while reducing the arrangement space by the lock hole effect.
  • connection portion of the bonding wire 41 is flat.
  • the bonding wires 41 are respectively connected to the signal terminals 64 and the above-described convex portions 611 b and 613 b.
  • the connection portions of the convex portions 611 b and 613 b and the connection portions of the signal terminals 64 are both flat. Specifically, the flatness of the connection portion is secured by tapping. Thereby, the connection reliability of the bonding wire 41 can be improved. Further, by punching, burrs (not shown) generated when forming the lead frame 60 can be struck and crushed to suppress foreign matter biting at the time of bonding.
  • the dummy terminal 65 does not provide an electrical connection function, and is a portion connected to the tie bar 66 before the tie bar is cut. As shown in FIGS. 7 and 16, a part of the dummy terminal 65 is extended in the Y direction and protrudes from the side surface 50c of the sealing resin body 50. The remainder of the dummy terminal 65 is extended in the Y direction and protrudes from the side surface 50 d. Four dummy terminals 65 are arranged respectively.
  • the dummy terminals 65 are connected to the islands 611 and 613 and the wiring parts 620 and 622, respectively. As shown in FIG. 16 etc., one of the dummy terminals 65 is an end opposite to the signal terminal 64 in the island 611 and extends in the Y direction from the end opposite to the positive electrode terminal 63B1 side. . Another dummy terminal 65 is an end of the island 613 opposite to the signal terminal 64 and extends in the Y direction from the end opposite to the positive electrode terminal 63B2 side.
  • Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 620, that is, the end opposite to the island 612.
  • Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 622, that is, the end opposite to the island 614.
  • one dummy terminal 65 is disposed between the negative electrode terminal 63E1 and the positive electrode terminal 63B1, and between the negative electrode terminal 63E2 and the positive electrode terminal 63B2. Further, two dummy terminals 65 are disposed between the positive electrode terminals 63B1 and 63B2. As shown in FIG. 21, the dummy terminals 65 on the side of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are extended to the first stage tie bar 660a. Therefore, in the state after tie bar cutting, as shown in FIG. 7 and FIG. 16 etc., the tie bar mark 66a of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 is extended to almost the same position in the Y direction. .
  • one of the dummy terminals 65 is extended in the Y direction from the end of the wiring portion 621, that is, the end opposite to the negative electrode terminal 63E1.
  • Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 623, that is, the end opposite to the negative electrode terminal 63E2.
  • the remaining two dummy terminals 65 are connected to a part of the signal terminal 64 connected to the shunt resistor 901 via the bonding wire 41 and are respectively arranged outside the signal terminal 64.
  • One dummy terminal 65 is disposed outside the output terminals 63P1 and 63P2 in the X direction. In addition, one dummy terminal 65 is disposed between the output terminals 63P1 and 63P2 and the signal terminal 64, respectively. As shown in FIG. 21, the output terminals 63P1 and 63P2 and the dummy terminal 65 on the signal terminal 64 side are extended to the tie bar 661a of the first stage. Therefore, in the state after tie bar cutting, as shown in FIG. 7 and FIG. 16 etc., the tie bar mark 66a of the output terminals 63P1 and 63P2 and the signal terminal 64 is extended to almost the same position in the Y direction.
  • the dummy terminal 65 is extended to substantially the same position as the tie bar mark 66 a. That is, it extends only to a position before the bent portions of the main terminal 63 and the signal terminal 64. Therefore, unlike the main terminal 63 and the signal terminal 64, the dummy terminal 65 does not have a bent portion.
  • the width of the dummy terminal 65 is smaller than the width of the main terminal 63.
  • the switching element 70 has a vertical structure, and has main electrodes on both sides in the Z direction which is the thickness direction of the chip.
  • the pad 71 described above which is a first pad, is provided on one side.
  • the drain electrode (not shown) is formed on the surface facing the island 61, and the source electrode 72 is formed on the surface opposite to the drain electrode formation surface.
  • the pad 71 is formed on the same main surface as the source electrode 72 at a position different from that of the source electrode 72.
  • a temperature sensitive diode is integrally formed.
  • the switching element 70 has a planar rectangular shape. As shown in FIG. 21, the pad 71 is arranged along one side of the switching element 70, specifically, the side opposite to the drive unit 80. In the present embodiment, the switching element 70 has four pads 71, which are arranged in order of source potential detection, gate electrode, anode of temperature sensitive diode, and cathode.
  • the switching element 70 includes the switching element 700H on the upper arm side constituting the first upper and lower arms and the switching element 700L on the lower arm side constituting the first upper and lower arms.
  • it has a switching element 701H on the upper arm side constituting the second upper and lower arms, and a switching element 701L on the lower arm side constituting the second upper and lower arms.
  • the switching element 700H is disposed on the island 611, and the switching element 700L is disposed on the island 612.
  • the switching element 701 H is disposed on the island 613, and the switching element 701 L is disposed on the island 614.
  • the switching elements 700H and 701H on the upper arm side are arranged in line symmetry in the X direction.
  • the lower arm side switching elements 700L and 701L are arranged in line symmetry in the X direction as in the corresponding islands 612 and 614.
  • the switching elements 700H and 701H on the upper arm side are arranged such that the alignment direction of the pad 71 and the source electrode 72 is the Y direction. That is, the pads 71 are arranged in the X direction.
  • the switching elements 700L and 701L on the lower arm side are arranged such that the alignment direction of the pad 71 and the source electrode 72 is the X direction. That is, the arrangement direction of the pads 71 is arranged in the Y direction.
  • the switching elements 70 are positioned and arranged with respect to the corresponding islands 61 so that their centers substantially coincide with each other.
  • the lower arm side switching elements 700L and 701L are disposed outside in the X direction with respect to the upper arm side switching elements 700H and 701H of the same phase. In the X direction, the switching element 700L, the switching element 700H, the switching element 701H, and the switching element 701L are arranged in this order.
  • the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 connected to the drain electrode of each switching element 70 are of the output terminal 63P1, the positive terminal 63B1, the positive terminal 63B2 and the output terminal 63P2. They are arranged in order. As described above, the arrangement order of the switching elements 70 and the arrangement order of the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 coincide with each other. Further, the main terminal 63 and the signal terminal 64 protrude only from the opposite side surfaces 50c and 50d.
  • the layout of the lead frame 60 is simplified, and the physical size of the semiconductor module 40 can be miniaturized by increasing the wiring density. Further, since the main terminals 63 and the signal terminals 64 protrude from only the two surfaces of the sealing resin body 50, the connection structure with the bus bar 27 can be simplified also when configuring the control unit 20.
  • the drain electrode of the switching element 70 is connected to the corresponding island 61 through the solder 42.
  • Source electrode 72 is connected to corresponding bridge member 90 via solder 42.
  • the drain electrode of the switching element 700H is connected to the island 611, and the drain electrode of the switching element 700L is connected to the island 612.
  • the drain electrode of the switching element 701H is connected to the island 613, and the drain electrode of the switching element 701L is connected to the island 614.
  • the drive unit 80 drives the switching element 70.
  • the drive signal generated by the drive circuit of the control circuit unit 26 is input to the gate electrode of each of the switching elements 70 via the drive unit 80. That is, the switching element 70 is driven by the drive signal output from the drive unit 80.
  • the drive unit 80 is configured as an IC chip such as an ASIC.
  • the driving unit 80 is fixed to the island 610 via a conductive adhesive 43 such as Ag paste.
  • a plurality of pads 81 On the surface opposite to the surface fixed to the island 610 in the drive unit 80, a plurality of pads 81, which are second pads, are formed.
  • a part of the pad 81 is connected to the pad 71 of the switching element 70 via the bonding wire 41.
  • Another pad 81 is connected to the islands 611 and 613 via bonding wires 41.
  • the rest of the pad 81 is connected to the signal terminal 64 through the bonding wire 41.
  • the drive unit 80 has a circuit for protecting the switching element 70. For example, it has a circuit for detecting the gate-source voltage Vgs of each of the switching elements 70 and a circuit for detecting the drain-source voltage Vds.
  • the drive unit 80 acquires the source potential from the pad 71 via the bonding wire 41.
  • the drain potential is acquired from the islands 611 and 613 through the bonding wire 41.
  • the drive unit 80 has a circuit for detecting the forward voltage Vf of each temperature sensitive diode. The drive unit 80 acquires the anode potential and the cathode potential from the pad 71 via the bonding wire 41.
  • the drive unit 80 further includes a determination circuit that determines an abnormality of the switching element 70 based on the gate-source voltage Vgs, the drain-source voltage Vds, and the forward voltage Vf. Specifically, the determination circuit determines whether overheating of the switching element 70, overcurrent, simultaneous turning on of the upper and lower arms, and the like have occurred.
  • the drive unit 80 has a notification circuit that notifies the control circuit unit 26 of the determination result through the signal terminal 64.
  • the drive unit 80 has a substantially rectangular planar shape.
  • the drive units 80 are arranged in line symmetry with respect to the center line of the lead frame 60 in the X direction.
  • the center of the drive unit 80 substantially coincides with the center line of the lead frame 60 in the X direction. Further, in the X direction, the center of the drive unit 80 substantially coincides with the center of the island 610. Accordingly, the switching elements 700L and 701L on the lower arm side are arranged in line symmetry with respect to the drive unit 80.
  • the driving unit 80 is disposed between the lower arm side switching elements 700L and 701H.
  • the switching element 700H on the upper arm side faces the switching element 700L and the drive unit 80 in the Y direction.
  • the pad 71 of the switching element 700H is disposed outside the island 610 in the X direction.
  • the switching element 701H on the upper arm side faces the switching element 701L and the drive unit 80 in the Y direction.
  • the pad 71 of the switching element 701H is disposed outside the island 610 in the X direction.
  • the four switching elements 70 are disposed around the drive unit 80 in plan view from the Z direction. Thereby, the length of the bonding wire 41 connecting the pad 71 of the switching element 70 and the drive unit 80 can be shortened. Since the relay wiring board is unnecessary, the number of parts can be reduced, and the physical size of the semiconductor module 40 can be miniaturized. In addition, when molding the sealing resin body 50, it is possible to suppress the occurrence of disconnection, connection failure or the like in the bonding wire 41. Since the length is short, the bonding wire 41 can also be inhibited from contacting other parts. That is, defects in the bonding wire 41 can be suppressed. In addition, the wiring density of the bonding wires 41 can be improved to reduce unnecessary space, and the physical size of the semiconductor module 40 can be miniaturized.
  • the drive unit 80 has a substantially rectangular planar shape, and as shown in FIG. 21, the pads 81 of the drive unit 80 are provided on the sides facing the switching elements 70 respectively.
  • pads 81 connected to the switching element 70 are concentrated on three consecutive sides of the drive unit 80. Thereby, the length of the bonding wire 41 can be shortened. Therefore, defects in the bonding wire 41 at the time of molding can be reduced.
  • the size of the semiconductor module 40 can be miniaturized. Note that only the pad 81 connected to the signal terminal 64 is disposed on the remaining one side of the drive unit 80.
  • the switching element 70 has a substantially square shape in detail. As shown in FIG. 21, the pads 71 are arranged in the vicinity of the center of one side of the switching element 70 along the side. As described above, since the pad 71 is disposed at the center of one side, the switching element 70 can be made common as one type of chip. In addition, the bonding wires 41 can be connected to the pads 71 and 81 on the upper arm side and the lower arm side, which are different in the arrangement by 90 degrees, though being made common. Moreover, the length of the bonding wire 41 can be shortened.
  • the signal terminals 64 are collectively arranged on one side of the drive unit 80 in the Y direction. All the signal terminals 64 are arranged on the opposite side of the drive unit 80 to the switching elements 700H and 701H on the upper arm side. The switching element 70 is opposed to the remaining three sides of the drive unit 80. According to this, the connection structure with the drive part 80 can be simplified including the signal terminal 64. Therefore, the length of the bonding wire 41 can be shortened, and the size of the semiconductor module 40 can be reduced.
  • the output terminals 63P1 and 63P2 are connected to the stator winding 121 of the rotary electric machine unit 10 via the output bus bars 27P1 and 27P2, so heat is transmitted from the rotary electric machine unit 10 side. Therefore, the switching element on the lower arm side is susceptible to heat.
  • the drive unit 80 is disposed between the switching elements 700L and 701L on the lower arm side. Further, in the X direction, the switching elements 700H and 701H are arranged in line symmetry, and the switching elements 700L and 701L are arranged in line symmetry. That is, the four switching elements 70 are equally arranged in the XY plane. Then, as shown in FIG. 16, assuming that the distance between the switching elements 700H and 701H on the upper arm side is L1 and the distance between the switching elements 700L and 701L on the lower arm side is L2, the distance L2 is longer than the distance L1. It is done.
  • the switching elements 700L and 701L which are heated by heat received from the rotary electric machine 10 are separated from each other.
  • the thermal interference between the switching elements 700L and 701L can be reduced more than the thermal interference between the switching elements 700H and 701H. Therefore, local overheating in the XY plane can be suppressed, and performance degradation due to heat can be suppressed for all the switching elements 70.
  • the sealing resin body 50 and the bonding wire 41 are not shown.
  • the heat release surfaces 611a to 614a opposite to the arrangement surface of the switching element 70 are exposed from the sealing resin body 50. Therefore, the heat of switching element 70 can be dissipated effectively.
  • the heat release surface 610a opposite to the arrangement surface of the drive unit 80 is exposed from the sealing resin body 50. Accordingly, the heat generated by the drive unit 80 and the heat received from the switching element 70 disposed around the drive unit 80 can be effectively dissipated. Moreover, the drive part 80 can also be miniaturized by the improvement of heat dissipation.
  • the heat release surfaces 620a and 622a opposite to the surfaces on the switching elements 700L and 701L side are sealing resin bodies Exposed from 50.
  • the heat of the switching elements 700L and 701L can be dissipated from the heat radiation surfaces 620a and 622a. That is, it is possible to effectively dissipate heat received from the rotating electrical machine unit 10.
  • the heat of the switching elements 700H and 701H can be dissipated from the heat dissipation surfaces 620a and 622a via the clip 900.
  • the bridging member 90 bridges the two wires. Specifically, the source electrode 72 of the switching element 70 and the corresponding wiring portion 62 are bridged.
  • the bridging member 90 is also referred to as a bridge.
  • the bridge member 90 is also referred to as a relay member because it electrically relays the source electrode 72 and the wiring portion 62.
  • the bridge member 90 has a pair of connection parts 91 as shown in FIGS. 12 and 13 for connection with the source electrode 72 and the wiring part 62.
  • the bridging member 90 is extended in one direction.
  • the bridging member 90 is extended in a direction perpendicular to the thickness direction of the connecting portion 91.
  • the connecting portions 91 are provided at both ends in the extending direction of the bridging member 90.
  • the connection portion 91 is connected to each of the source electrode 72 and the wiring portion 62 through the solder 42.
  • the bridge member 90 has an upper bottom portion 92 and a connecting portion 93 in addition to the pair of connecting portions 91.
  • the connection portion 91 and the upper bottom portion 92 have a thickness direction as a Z direction, and are disposed at different positions in the Z direction.
  • the connecting portion 93 connects the connecting portion 91 and the upper bottom portion 92.
  • the connecting portion 93 has an inclined portion and bent portions provided at both ends of the inclined portion.
  • the shape defined by the upper bottom portion 92 and the connecting portions 93 connected to both ends of the upper bottom portion 92 has a substantially trapezoidal shape in the ZX plane.
  • the upper bottom portion 92 is convex with respect to the connection portion 91.
  • the bridging member 90 is convex on the side opposite to the connecting surface with the solder 42.
  • the bridge member 90 has a clip 900 for relaying electrically and a shunt resistor 901 used for current detection in addition to the relay for electric ing.
  • the bridging member 90 has two clips 900 and two shunt resistors 901 corresponding to the four switching elements 70.
  • the clip 900 connects the switching elements 700H and 701H on the upper arm side and the corresponding wiring parts 620 and 622, respectively.
  • a constituent material of the clip 900 for example, Cu can be used.
  • the surface of Cu is plated with Ni.
  • a pair of bonding wires 41 is connected to the surface opposite to the connection surface of the solder 42.
  • the voltage drop is detected by the bonding wire 41, and the current value of the current flowing between the two wires is detected.
  • the shunt resistor 901 connects the switching elements 700L and 701L on the lower arm side to the corresponding wiring parts 621 and 623, respectively.
  • the detected value of the shunt resistor 901 is output to the control circuit unit 26 via the bonding wire 41 and the signal terminal 64.
  • the clip 900 and the shunt resistor 901 are each arranged such that the extending direction is the X direction and the width direction is the Y direction.
  • the shunt resistor 901 includes a resistor 901a, a pair of electrodes 901b, a joint 901c, and a mark 901d.
  • the shunt resistor 901 has an upper surface 901 e to which the bonding wire 41 for current detection is connected, and a lower surface 901 f to which the solder 42 is connected.
  • the resistor 901a has a resistivity set in advance to detect a current.
  • CuMnNi can be used as the resistor 901 a.
  • the resistor 901a has a flat plate shape.
  • the resistor 901a has a substantially rectangular planar shape.
  • the pair of electrodes 901b is disposed to sandwich the resistor 901a.
  • a resistor 901a is disposed between the pair of electrodes 901b.
  • the electrodes 901b are respectively disposed at both ends of the resistor 901a in one direction orthogonal to the thickness direction of the resistor 901a.
  • a metal having a resistivity smaller than that of the resistor 901a for example, Cu can be used.
  • the surface of Cu is plated with Ni.
  • the electrode 901 b has a substantially crank shape in the ZX plane.
  • the electrode 901 b has two bends respectively.
  • the electrode 901 b forms all of the connection portion 91 described above, all of the connection portion 93, and a part of the upper bottom portion 92.
  • the resistor 901a is supported at a position away from the connection portion 91 in the Z direction by the crank-shaped electrode 901b.
  • the pair of electrodes 901 b is a pair of legs supporting the resistor 901 a.
  • the bonding portion 901 c is a bonding region between the resistor 901 a and the electrode 901 b.
  • the bonding portion 901c is formed at the interface between the resistor 901a and the electrode 901b.
  • the joint portion 901c is formed by welding the resistor 901a and the electrode 901b. For this reason, the joint portion 901c is also referred to as a weld bead area.
  • the width W1 on the upper surface 901e is greater than the width W2 on the lower surface 901f, as shown in FIG. It is narrowed.
  • the width W1 is, for example, 0.6 mm or less.
  • the width of the joint portion 901c is maximized at the lower surface 901f, minimized at the upper surface 901e, and gradually narrowed from the lower surface 901f toward the upper surface 901e.
  • the mark 901 d is a reference of the connection position of the pair of bonding wires 41 for current detection.
  • the electrodes 901 b are formed in the vicinity of the bonding portions 811.
  • the mark 901 d can be formed by press processing, printing, laser irradiation, or the like.
  • a pair of marks 901 d are provided at equal distances from the center so as to straddle the center in the width direction. Thereby, the bonding wire 41 can be connected to the center in the width direction without a mark based on the pair of marks 901d. Thereby, the bondability can be improved.
  • the resistor 901a and the electrode 901b are prepared, and the resistor 901a is disposed between the pair of electrodes 901b. Then, in a state where each of the electrodes 901b is in contact with the resistor 901a, a beam such as an electron beam is irradiated from the lower surface 901f side to weld each of the electrodes 901b with the resistor 901a. Thus, the bonding portion 901c is formed at the interface between the one electrode 901b and the resistor 901a and at the interface between the other electrode 901b and the resistor 901a.
  • the width of the bonding portion 901c becomes maximum at the lower surface 901f and gradually narrows from the lower surface 901f to the upper surface 901e.
  • the shunt resistor 901 can be obtained through punching from a roll material, Ni plating of the electrode 901b, bending of the electrode 901b, and the like.
  • the electrode 901 b is formed of a metal having a resistivity smaller than that of the resistor 901 a, for example, Cu.
  • the Cu is also contained in the bonding portion 901c.
  • Cu has a high TCR (temperature coefficient of resistance) compared to the metal constituting the resistor 901 a. Therefore, in order to improve the current detection accuracy, it is preferable to connect the bonding wire 41 in the vicinity of the end of the resistor 901 a and to reduce Cu between the bonding wires 41 as much as possible. That is, it is preferable to make the electrode 901 b and the bonding portion 901 c existing between the bonding wires 41 as small as possible.
  • the surface of the joint and its periphery are contaminated by spatter, fumes and the like. Also, the surface of the joint and its surroundings are rough. For this reason, in order to ensure bondability, it is necessary to provide a predetermined gap to the joint and connect the bonding wire.
  • the width of the bonding portion 901c is wider at the beam irradiation surface than at the non-irradiation surface of the beam.
  • the beam irradiation surface has a greater effect of sputtering, fumes, etc. on the surface of the bonding portion 901c and its periphery.
  • the irradiated surface of the beam is larger in the rough portion in the bonding portion 901c and the periphery thereof. That is, the portion with a large surface roughness becomes wide. Therefore, when the beam irradiation surface and the bonding surface coincide with each other, the gap must be increased.
  • the width W1 on the upper surface 901e side is smaller than the width W2 on the lower surface 901f side. Therefore, even if a predetermined gap is provided for the bonding portion 901c, the bonding wire 41 can be connected near the end of the resistor 901a.
  • the configuration of W1 ⁇ W2 is realized by irradiating the beam from the lower surface 901f side.
  • the upper surface 901 e is not a beam irradiation surface, and therefore the influence of sputtering and fumes can be reduced as compared to the lower surface 901 f.
  • the portion with large surface roughness can be made smaller. Thereby, the gap with respect to the bonding portion 901c can be reduced.
  • the bonding wire 41 can be connected closer to the end of the resistor 901 a. That is, the detection accuracy of the current can be improved. In the current detection device including the shunt resistor 901 and the bonding wire 41, the detection accuracy of the current can be improved. Further, in the upper surface 901e, which is the suction surface at the time of transportation, the portion having a large surface roughness including the bonding portion 901c is small, so the shunt resistor 901 can be easily suctioned and transported.
  • the mark 901 d is formed on the upper surface 901 e. Therefore, the bonding wire 41 can be accurately connected to the predetermined position using the mark 901 d as a position reference. Thereby, the variation in bonding position can be reduced, and the current detection accuracy can be further enhanced.
  • the structure which does not have the mark 901d is also employable.
  • each of the pair of bonding wires 41 may be connected to the resistor 901a.
  • the upper surface 901e which is the non-irradiated surface of the beam, can reduce the effects of sputtering and fumes as compared to the lower surface 901f. Therefore, the bonding wire 41 can be connected near the end of the resistor 901a, more specifically, near the bonding portion 901c. As a result, while the bonding wire 41 is connected to the resistor 901a, it is possible to suppress a decrease in the detection voltage range (dynamic range). In addition, the influence of the TCR can be eliminated, whereby the current detection accuracy can be improved.
  • one bonding wire 41 may be connected to the electrode 901b, and the other bonding wire 41 may be connected to the resistor 901a.
  • the width of the connection portion 91 of the shunt resistor 901 is shorter than the width of the source electrode 72 of the switching element 70. If the width of the source electrode 72 is equal to or larger than the width of the connection portion 91 of the shunt resistor 901, the change in the width of the connection portion 91 in the shunt resistor 901 can be taken even if the chip size of the switching element 70 changes. be able to. That is, the upper bottom 92 including the resistor 901a, the joint 901c, and part of the electrode 901b may not be changed. Therefore, the design of shunt resistor 901 can be made common.
  • FIG. 28 shows, for example, a case where a current flows from the output terminal 63P1 to the negative electrode terminal 63E1 via the switching element 700L, the shunt resistor 901, and the wiring portion 621.
  • the broken line arrow indicates the current flowing toward the drain electrode of the switching element 700L
  • the solid line arrow indicates the current flowing from the source electrode 72 of the switching element 700L toward the negative electrode terminal 63E1.
  • the shunt resistor 901 is disposed such that the extending direction of the shunt resistor 901 is the X direction. Further, the output terminal 63P1 is drawn outward with respect to the island 612 in an oblique direction, and is extended in the Y direction at the end of the output terminal 63P1.
  • the current flowing through the shunt resistor 901 has a component in the opposite direction to the current flowing through the obliquely extended portion of the output terminal 63P1. Therefore, the mutual inductance of the shunt resistors 901 and hence the ESL can be reduced, thereby enhancing the detection accuracy.
  • the ESL can be reduced while suppressing the complication of the wiring structure, that is, the increase in size of the semiconductor module 40.
  • the bus bar 27 and the rotating electrical machine unit 10 are included.
  • a current loop is formed.
  • the current loop can be made smaller compared to the configuration having the upper and lower arms for one phase in the semiconductor module. This can reduce the radiation noise.
  • FIG. 29 the sealing resin body 50 and the bonding wire 41 are omitted.
  • the broken line arrows shown in FIG. 29 indicate the current paths at the timing when the switching elements 700H and 701L are turned on and the switching elements 700L and 701H are turned off.
  • the switching elements 700H and 700L constituting the first upper and lower arms, the positive electrode terminal 63B1, the negative electrode terminal 63E1, and the output terminal 63P1 are formed by the islands 611 and 612, the wiring portions 620 and 621, the clip 900, and the shunt resistor 901
  • the lines S1 are connected to each other.
  • the switching elements 700H and 700L are connected in series between the batteries by the wiring S1.
  • the switching elements 701H and 701L constituting the second upper and lower arms, the positive electrode terminal 63B2, the negative electrode terminal 63E2, and the output terminal 63P2 are formed by the islands 613 and 614, the wiring portions 622 and 623, the clip 900, and the shunt resistor 901.
  • the interconnections S2 are connected to each other.
  • the switching elements 701H and 701L are connected in series between the batteries by the wiring S2.
  • a conductive member having a permeability higher than that of the sealing resin body 50 is disposed in a region sandwiched by the wires S1 and S2, unlike the wires S1 and S2.
  • the island 610 of the drive unit 80 is disposed as a conductive member.
  • An eddy current is generated in the conductive member by the current loop.
  • the magnetic field generated by the eddy current is generated in the direction that prevents the magnetic field generated by the current loop including the bus bar 27 and the rotating electrical machine unit 10. Thereby, radiation noise can be effectively reduced.
  • the direction of the magnetic field shown on the islands 611 and 613 is due to the current loop
  • the direction of the magnetic field shown on the conductive member (island 610) is due to the eddy current.
  • the arrangement of the main terminals 63 is not particularly limited as long as the island 610 can be arranged in the region sandwiched by the wirings S1 and S2.
  • the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 protrude from the side surface 50c of the sealing resin body 50, and the output terminals 63P1 and 63P2 protrude from the opposite side surface 50d.
  • the island 610 is disposed between the wirings S1 and S2 in the X direction. Therefore, the effect of canceling the magnetic field of the current loop can be enhanced by the eddy current. Further, the connection structure with the bus bar 27 can be simplified.
  • positioned is used as a conductive member.
  • the configuration can be simplified and the size of the semiconductor module 40 can be reduced as compared with the configuration using another conductive member with the island 610.
  • the signal terminal 640 of the ground potential is connected to the island 610, and the island 610, which is a conductive member, is grounded. Thereby, the potential fluctuation of the island 610 can be suppressed. And an electric field component can be suppressed and radiation noise can be reduced further.
  • the example of the island 610 is shown as a conductive member, it is not limited to this. Any conductive member having higher permeability than the sealing resin body 50 can be employed.
  • the lead frame 60 before the tie bar cut includes the tie bar 66, the outer frame 67, in addition to the island 61, the wiring portion 62, the main terminal 63, the signal terminal 64, and the dummy terminal 65 described above.
  • a connecting portion 68 is provided.
  • the outer frame 67 has a substantially rectangular ring shape in the XY plane, and a plurality of through holes for positioning the lead frame 60 are provided.
  • the tie bar 66 is provided on the side of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 in the Y direction, the first stage tie bar 660a near the island 61 and the second stage provided at a position farther from the island 61 than the tie bar 660a.
  • the tie bar 66 has a first stage tie bar 661a near the island 61 and a second stage tie bar 661b provided at a position farther from the island 61 than the tie bar 661 on the output terminals 63P1 and 63P2 and the signal terminal 64 side. doing.
  • Each of the tie bars 66 is connected to the outer frame 67 at both ends in the X direction.
  • the tie bar 660a connects the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 to the outer frame 67.
  • the tie bar 660a is connected to each of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 at a position closer to the island 61 than the narrow portion 63a.
  • the tie bars 660 a extend in a straight line along the X direction.
  • the islands 611 and 613 and the wiring portions 620 and 622 in which the clip 900 which is the bridging member 90 is disposed are connected to the tie bar 660a by corresponding positive terminals 63B1 and 63B2 and dummy terminals 65.
  • the wiring portions 620 and 622 are connected to the tie bar 660 a by the dummy terminals 65.
  • the tie bar 660b is connected to each of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 at a position farther from the island 61 than the narrow portion 63a and closer to the connection portion with the bus bar 27 There is.
  • the tie bar 660b is connected to the end of the wide portion adjacent to the narrow portion 63a.
  • the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are located at the same positions as the start points of extension from the islands 611 and 613 and the wiring portions 621 and 623, respectively.
  • the tie bar 660a has a portion extending in the X direction and a portion extending in the Y direction.
  • the portions connected to the positive electrode terminals 63B1 and 63B2 are closer to the island 61 in the Y direction than the portions connected to the negative electrode terminals 63E1 and 63E2.
  • An extending portion in the Y direction is disposed between the positive electrode terminal 63B1 and the negative electrode terminal 63E1, and between the positive electrode terminal 63B2 and the negative electrode terminal 63E2.
  • the tie bars 660a and 660b are connected to the outer frame 67 also in the Y direction by the connecting portion 68.
  • the connecting portion 68 is connected to the tie bar 660 a and the tie bar 660 b at a position between the positive electrode terminal 63 B 1 and the dummy terminal 65 connected to the island 611.
  • Another connecting portion 68 is connected at a position between the positive electrode terminal 63B2 connected to the island 613 and the dummy terminal 65.
  • Two connecting portions 68 are disposed between the positive electrode terminals 63B1 and 63B2.
  • Another connecting portion 68 is connected to the tie bar 660 a and the tie bar 660 b at a position between the positive electrode terminal 63 B 1 and the dummy terminal 65 connected to the wiring portion 620.
  • Another connecting portion 68 is connected to the tie bar 660 a and the tie bar 660 b at a position between the positive electrode terminal 63 B 2 and the dummy terminal 65 connected to the wiring portion 622.
  • Each of the connecting portions 68 extends in the Y direction, one end thereof is connected to the tie bar 660 a, and the other end is connected to the outer frame 67.
  • the tie bar 661a connects the output terminals 63P1 and 63P2 and the signal terminal 64 to the outer frame 67.
  • the tie bars 661a extend in a straight line along the X direction.
  • the tie bar 661a is connected to a position closer to the island 61 than the narrow portion 63a of the output terminals 63P1 and 63P2 and the crank portion 64a of the signal terminal 64.
  • the islands 612 and 614 and the wiring portions 621 and 623 in which the shunt resistor 901 which is the bridging member 90 is disposed the islands 612 and 614 are connected to the tie bar 661a by the corresponding output terminals 63P1 and 63P2 and the signal terminal 641.
  • the wiring portions 622 and 623 are connected to the tie bar 661 a by the dummy terminal 65.
  • the tie bar 661b is connected to a position farther from the island 61 than the narrow portions 63a of the output terminals 63P1 and 63P2 and the crank portion 64a of the signal terminal 64 and closer to a connection portion with the bus bar 27 and the wiring board 22 It is done.
  • the tie bars 661b extend in a straight line along the X direction.
  • the second tier tie bars 660b and 661b are wider than the first tier tie bars 660a and 661a. Since the width of the tie bars 660a and 661a is narrow, the tie bars 660a and 661a do not obstruct the bending of the main terminals 63 and the signal terminals 64, and the size of the semiconductor module 40 can be miniaturized. In addition, dimensional deviation at the time of tie bar cutting can be reduced. On the other hand, since the width of the tie bars 660 b and 661 b is wide, the rigidity can be improved thereby, and the deformation of the tie bars 66 can be suppressed at the time of molding the sealing resin body 50. Therefore, the positional accuracy of the main terminal 63 and the signal terminal 64 can be improved. In particular, the positional accuracy of the signal terminal 64 can be improved.
  • connection parts with the outside in the main terminal 63 and the signal terminal 64 are not connected with the outer frame 67, and are free.
  • the main terminals 63 and the signal terminals 64 are separated from the outer frame 67 when the lead frame 60 is punched out of a metal plate.
  • the tip of the signal terminal 64 is swaged as shown in FIG. 6, FIG. 14, and FIG.
  • the tip of the signal terminal 64 is crushed by swaging to have a slope, and has a quadrangular pyramid shape.
  • the signal terminals 64 can be efficiently inserted into and mounted on the wiring board 22. It is possible to crush the burrs by swaging.
  • the dummy terminals 65 disposed adjacent to the signal terminals 64 are extended in the Y direction and connected to the outer frame 67, as shown in FIG. As a result, the number of hanging points with the outer frame 67 increases, so that deformation of the tie bars 661a and 661b can be suppressed at the time of molding. Therefore, the positional accuracy of the output terminals 63P1 and 63P2 and the signal terminal 64 can be improved. In particular, the positional accuracy of the signal terminal 64 can be improved.
  • the bridging member 90 connects the island 61 and the wiring portion 62 via the switching element 70.
  • One of the clips 900 is disposed on the island 611 and the wiring portion 620.
  • Another clip 900 is disposed on the island 613 and the wiring portion 622.
  • One of the shunt resistors 901 is disposed on the island 612 and the wiring portion 621.
  • Another shunt resistor 901 is disposed on the island 614 and the wiring portion 623.
  • a portion where the bridging member 90 is disposed in other words, a projected portion from the Z direction is indicated by a broken line.
  • An arrangement portion 60a of the bridge member 90 in the island 61 and an arrangement portion 60b of the bridge member 90 in the wiring portion 62 in which the same bridge member 90 is arranged are arranged side by side in the X direction. That is, the arranging direction of the placement parts 60a and 60b with respect to the same bridging member 90 is the same as the extending direction of the first stage tie bars 660a and 661a to which the island 61 and the wiring part 62 are connected.
  • the arranging direction of the first stage tie bar marks 66a arranged on the same side with respect to the island 61 and the extending direction of the bridging members 90 are made the same direction (X direction). There is.
  • FIG. 31 compares this embodiment with a reference example.
  • r is added to the end of the reference numerals of the relevant elements of this embodiment.
  • the extending direction of the tie bars 660a and 661a and the extending direction of the bridging member 90 substantially coincide with each other.
  • the extending direction of the tie bars 660ar and 661ar and the extending direction of the bridging member 90r are substantially orthogonal to each other.
  • the maximum length from the tie bar 66 to the bridging member 90 is made longer in the direction orthogonal to the extending direction of the tie bar 66 as compared to the arrangement in which the arrangement is orthogonal. Can.
  • the island 61 and the wiring portion 62 in contact with the molding die are easily bent.
  • the islands 611 to 614 and the wiring portions 62 corresponding to a plurality of phases are provided, height variations easily occur in the islands 611 to 614 and the wiring portions 62 in the Z direction.
  • the islands 611 to 614 and the wiring portion 62 are brought into contact with the molding die in order to expose the heat radiating surfaces 611a to 614a and 620a to 623a from the back surface 50b, height variations occur. Even if it does, the island 61 and the wiring part 62 can relieve stress. Therefore, the stress acting on the junctions between the islands 611 to 614 and the corresponding switching elements 70 can be reduced.
  • the length of the tie bar 66 is also longer in the X direction.
  • at least one of the islands 611 to 614 and the wiring portion 62 which is the arrangement target of the bridging member 90, is connected to the same tie bar 66 at a plurality of places.
  • the islands 611 to 614 are connected to the same tie bar 66 at two places respectively. According to this, it is possible to suppress the deformation of the tie bar 66 at the time of molding the sealing resin body 50. By suppressing the tie bar deformation, it is possible to reduce the stress acting on the junction between the islands 611 to 614 and the corresponding switching element 70.
  • the islands 611 and 613 are connected to the tie bar 660 a by the corresponding positive electrode terminals 63 B 1 and 63 B 2 and to the tie bar 660 a by the dummy terminal 65.
  • the dummy terminal 65 narrower than the main terminal 63, it is possible to suppress an increase in physical size of the lead frame 60 while suppressing the deformation of the tie bar 660a.
  • the dummy terminals 65 connected to the islands 611 and 613 are connected to the outer frame 67 in the Y direction by the connecting portion 68. Also by this, the rigidity can be improved and the deformation of the tie bars 660a and 660b can be suppressed. In addition, since the connecting portion 68 does not provide an electrical connection function, welding to the bus bar 27 is not affected even if it is separated from the outer frame 67 at the time of tie bar cutting.
  • the islands 612 and 614 are connected to the tie bars 661a and 661b by the corresponding output terminals 63P1 and 63P2 and the signal terminal 641.
  • the signal terminal 641 narrower than the main terminal 63, it is possible to suppress an increase in physical size of the lead frame 60 while suppressing the deformation of the tie bars 661a and 661b.
  • the island 61 and the wiring portion 62 in which the same bridging member 90 is disposed are connected to different tie bars 660a and 661a. According to this, the island 61 and the wiring portion 62 are both suspended with respect to the tie bar 66. Therefore, deformation of the tie bar 66 can be suppressed at the time of molding.
  • the extending direction of the bridging member is the Y direction
  • shear stress in the X direction acts on the joint portion of the switching element 70 due to tie bar deformation in the both suspension structure.
  • the extending direction of the bridging member 90 is the same X direction as the tie bar 66, shear stress can be suppressed.
  • the islands 612 and 614 in which the shunt resistor 901 is disposed are connected to the tie bar 661 a by the corresponding output terminals 63P1 and 63P2 and the signal terminal 640, and via the wiring portions 620 and 622 and the dummy terminals 65 connected to the islands 612 and 614. It is connected to a tie bar 660a.
  • the wiring portions 621 and 623 in which the shunt resistor 901 is disposed are connected to the tie bars 660a and 660b via the corresponding negative terminals 63E1 and 63E2, and are connected to the tie bar 661a via the dummy terminals 65.
  • the islands 612 and 614 and the wiring portions 621 and 623 in which the shunt resistor 901 is disposed are both suspended.
  • FIG. 32 shows a modification of the semiconductor module 40.
  • the signal terminal 64 is omitted, and the sealing resin body 50 and the main terminal 63 are illustrated in a simplified manner.
  • the positive electrode terminal 63B1 and the negative electrode terminal 63E1, and the positive electrode terminal 63B2 and the negative electrode terminal 63E2 protruding from the same side surface 50c are arranged in proximity to each other in the X direction.
  • the capacitor 44 is disposed on one of the surface 50a and the back surface 50b of the sealing resin body 50, and the capacitor 44 is connected to the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2.
  • a capacitor 44 for the snubber circuit is employed, and two capacitors 44 are disposed on the one surface 50a.
  • Recesses 55 which are also open to the side surface 50c are formed in two places on the one surface 50a, and the capacitors 44 are individually disposed in each of the recesses 55.
  • the leads 44a of the capacitor 44 are connected to the positive electrode terminal 63B1 and the negative electrode terminal 63E1, respectively.
  • the leads 44a of another capacitor 44 are connected to the positive electrode terminal 63B2 and the negative electrode terminal 63E2, respectively. According to this, the capacitor 44 can be integrated without increasing the physique in the XY plane.
  • a smoothing capacitor may be disposed instead of the capacitor 44 for the snubber circuit.
  • FIG. 33 shows a modification of the semiconductor module 40.
  • the drive unit 80 has a current detection circuit that detects the current of each phase.
  • the low potential of the shunt resistor 901 is input to the pad 81 of the drive unit 80 through the bonding wire 41, the signal terminal 64, and the bonding wire 41.
  • the switching element 701 L side is also configured the same. According to the above, the length of the bonding wire 41 connected to the shunt resistor 901 can be shortened. For example, generation of defects in bonding wire 41 can be suppressed during molding.
  • the signal terminal 64 corresponding to the low potential side of the shunt resistor 901 is formed by connecting two signal terminals 64 by a connecting portion extending in the X direction.
  • the high potential of the shunt resistor 901 input to the drive unit 80 is substituted by the source potential of the switching element 700L.
  • Second Embodiment This embodiment can refer to the preceding embodiments. Therefore, the description of the portions common to the rotating electrical machine 1 and the semiconductor module 40 shown in the preceding embodiment is simplified or omitted.
  • the rotating electrical machine 1 of the present embodiment also includes the rotating electrical machine unit 10 and the control device unit 20 for controlling the rotating electrical machine unit 10, and the control device unit 20 is a controlled object. Integrated with 10
  • the rotating electrical machine unit 10 functions as a generator (alternator) that generates electric power for charging the battery by being supplied with driving force from the engine.
  • the rotating electrical machine unit 10 includes a housing 11, a stator 12, a rotor 13, a pulley 14, a slip ring 15, and a brush 16 as in the first embodiment.
  • the housing 11 accommodates the stator 12 and the rotor 13 and rotatably supports the rotor 13.
  • a control device unit 20 is fixed to the rear side in the axial direction of the housing 11.
  • the stator 12 has a stator core 120 and a stator winding 121.
  • the stator winding 121 has a stator winding 121a consisting of three-phase windings of U-phase, V-phase and W-phase, and X-phase, Y-phase and Z-phase.
  • a stator winding 121b consisting of three-phase windings.
  • the stator windings 121a and 121b are arranged offset from each other by a predetermined electrical angle (for example, 30 degrees).
  • the rotor 13 is rotated by the driving force supplied from the engine, and the generated magnetic flux is interlinked with the stator winding 121, whereby the stator winding 121 generates an alternating current.
  • the rotor 13 has a rotor core 130, a rotor winding 131, a fan 132, and a rotating shaft 133, as in the first embodiment.
  • the pulley 14 is connected to a portion of the rotating shaft 133 that protrudes forward from the housing 11 and rotates with the rotating shaft 133.
  • the slip ring 15 is fixed to an outer peripheral surface of a portion of the rotation shaft 133 which protrudes rearward from the housing 11 via an insulating member.
  • the slip ring 15 is connected to the rotor winding 131 via a wire.
  • the brush 16 is pressed to the rotary shaft 133 side in the radial direction, for example, by a spring, and is in contact with the outer peripheral surface of the slip ring 15.
  • the brush 16 is held by a brush holder 160. Direct current is supplied to the rotor winding 131 via the brush 16 and the slip ring 15.
  • control unit 20 In order to charge the battery, control unit 20 converts the power generated by rotating electrical machine 10 into direct current, and supplies the power to the battery.
  • the control device unit 20 includes a regulator (not shown) and a rectifier circuit unit 30 shown in FIG.
  • the regulator controls the direct current supplied to the rotor winding 131 to maintain the voltage at a predetermined voltage suitable for charging the battery.
  • the rectifying circuit unit 30 rectifies the alternating current supplied from the rotating electrical machine unit 10 by the switching element 70 and converts it into direct current.
  • the configuration of the rectifier circuit unit 30 is the same as that of the inverter circuit unit 23 shown in the first embodiment.
  • the rectifier circuit unit 30 is configured of three semiconductor modules 40.
  • Each semiconductor module 40 has a plurality of switching elements 70 constituting upper and lower arms for two phases. Also in the present embodiment, an n-channel MOSFET is employed as the switching element 70.
  • the first semiconductor module 40 constitutes upper and lower arms of U phase and V phase
  • the second semiconductor module 40 constitutes upper and lower arms of W phase and X phase
  • the third semiconductor A module 40 constitutes upper and lower arms of Y phase and Z phase.
  • Each arm is constituted by one switching element 70, and each of the semiconductor modules 40 has four switching elements 70.
  • the semiconductor module 40 includes the switching element 700H on the upper arm side and the switching element 700L on the lower arm side constituting the first upper and lower arms, and the switching element 701H on the upper arm side and the lower arm side constituting the second upper and lower arm.
  • Each has a switching element 701L. Switching elements 700H and 700L are connected in series, and switching elements 701H and 701L are connected in series.
  • the control device unit 20 includes power assemblies PA1, PA2 and PA3 constituting the rectifier circuit unit 30, and a cover 31.
  • the power assembly PA1 includes a semiconductor module 40, a heat sink 24, and a bus bar assembly BA1 including a bus bar 27.
  • the power assembly PA2 includes a semiconductor module 40, a heat sink 24, and a bus bar assembly BA2 including a bus bar 27.
  • the power assembly PA3 includes a semiconductor module 40, a heat sink 24, and a bus bar assembly BA3 including a bus bar 27.
  • the heat sink 24 of each of the power assemblies PA1, PA2, PA3 dissipates the heat generated by the corresponding semiconductor module 40.
  • switching elements 700H and 700L constitute U-phase upper and lower arms, and switching elements 701H and 701L constitute V-phase upper and lower arms.
  • the switching elements 700H and 700L constitute W-phase upper and lower arms, and the switching elements 701H and 701L constitute X-phase upper and lower arms.
  • the switching elements 700H and 700L constitute Y-phase upper and lower arms, and the switching elements 701H and 701L constitute Z-phase upper and lower arms.
  • the bus bar assemblies BA1, BA2, BA3 are a collection of bus bars 27 for wiring the corresponding semiconductor modules 40.
  • positive electrode bus bar 27B, negative electrode bus bar 27E, and output bus bars 27P1 and 27P2 for wiring semiconductor module 40 are fixed to the same resin member by insert molding or the like.
  • the positive electrode bus bar 27B, the negative electrode bus bar 27E, and the output bus bars 27P1 and 27P2 are integrated by resin in a state where a predetermined distance is left.
  • the positive electrode bus bar 27B and the negative electrode bus bar 27E are stacked and arranged via a resin.
  • the positive electrode bus bar 27B is connected to the drain electrodes of the switching elements 700H and 701H on the upper arm side.
  • the negative bus bar 27E is connected to the source electrodes of the switching elements 700L and 701L on the lower arm side.
  • the output bus bar 27P1 is connected to the connection point of the switching elements 700H and 700L.
  • the output bus bar 27P2 is connected to the connection point of the switching elements 701H and 701L.
  • semiconductor module 40 is fixed to corresponding bus bar assemblies BA1, BA2 and BA3 in a state of being connected to bus bar 27. Further, the heat sink 24 is fixed to the heat dissipation surface side of the semiconductor module 40.
  • the power supply terminal 32 is integrated only in the power assembly PA1. As shown in FIGS. 37 and 38, the power assembly PA1 includes a power supply terminal 32 and a fixing member 33 in addition to the semiconductor module 40, the heat sink 24, and the bus bar assembly BA1.
  • a wire from the positive electrode of the battery is connected to the power supply terminal 32.
  • the power supply terminal 32 is fixed to the bus bar assembly BA1 by a fixing member 33.
  • the power supply terminal 32 is fixed to the fixing member 33 by a nut 34.
  • the fixing member 33 is integrated with the positive electrode bus bar 27B, the negative electrode bus bar 27E, and the output bus bars 27P1 and 27P2 with resin in a state of being in contact with the positive electrode bus bar 27B.
  • the power assemblies PA1, PA2, PA3 are arranged in a substantially U-shape at the axial rear end of the housing 11 of the rotary electric machine 10 so as to surround the rotary shaft 133. Specifically, around the rotation axis 133, the power assembly PA1, the power assembly PA2, and the power assembly PA3 are arranged in this order. And as shown in FIG. 37, it is fixing to the housing 11 by the volt
  • the positive electrode bus bars 27B are connected to each other in the adjacent power assemblies PA1 and PA2, and the positive electrode bus bars 27B are connected to each other in the adjacent power assemblies PA2 and PA3.
  • the negative bus bars 27E are connected to each other, and in the adjacent power assemblies PA2 and PA3, the negative bus bars 27E are connected to each other.
  • the negative bus bar 27E of the power assembly PA1 is connected to the housing 11 fixed to the vehicle body, and is connected to the negative electrode of the battery via the vehicle body.
  • output bus bar 27P1 is connected to the U phase of stator winding 121a, and output bus bar 27P2 is connected to the V phase of stator winding 121a.
  • output bus bar 27P1 is connected to the W phase of stator winding 121a, and output bus bar 27P2 is connected to the X phase of stator winding 121b.
  • output bus bar 27P1 is connected to the Y phase of stator winding 121b, and output bus bar 27P2 is connected to the Z phase of stator winding 121b.
  • the cover 31 is a resin member that covers the power assemblies PA1, PA2, and PA3.
  • the cover 31 is fixed to the housing 11 so as to cover the power assemblies PA1, PA2, and PA3 in a state in which a part of the power supply terminal 32 is exposed to the outside.
  • the stator windings 121a and 121b are alternating current (3 Phase exchange).
  • the rectifier circuit unit 30 is controlled by the drive unit 80 and rectifies alternating current supplied from the stator winding 121 via the output bus bars 27P1 and 27P2.
  • the drive unit 80 controls the on / off of the switching element 70 to sequentially switch the current flow direction to rectify alternating current.
  • alternating current is rectified by the parasitic diode.
  • the direct current converted by the rectifier circuit unit 30 is supplied to the battery. Thereby, the battery is charged by the power generated by the rotating electrical machine unit 10.
  • the semiconductor module 40 As shown in FIGS. 39 to 53, the semiconductor module 40 according to the present embodiment also includes the sealing resin body 50, the lead frame 60, the switching element 70, the driving unit 80, and the bridging member 90.
  • the sealing resin body 50 is not shown.
  • the lead frame 60 before tie bar cutting is shown.
  • the bonding wire 41 is omitted for the sake of convenience.
  • the sealing resin body 50 has substantially the same configuration as that of the first embodiment.
  • This sealing resin body 50 is also molded by a transfer molding method using, for example, an epoxy resin.
  • the sealing resin body 50 has one surface 50a and a back surface 50b, which are surfaces in the Z direction, and a side surface.
  • the bus bar assemblies BA1, BA2, and BA3 corresponding to the one surface 50a side are disposed, and the heat sink 24 is disposed on the back surface 50b side.
  • side surfaces 50c and 50d from which the main terminal 63 and the signal terminal 64 protrude are provided.
  • a pin mark 53 derived from an ejector pin and a gate mark 54 of a mold are provided on the one surface 50a.
  • a pin mark 53 is provided on the back surface 50b.
  • the islands 611 and 613 are integrated by the connecting portion 615.
  • the notch 615b is provided in the connection part 615, and it enables it to arrange
  • the notches 615 b are respectively provided on both sides of the connecting portion 615 in the Y direction. As a result, the ejector pins are disposed in a well-balanced manner in the XY plane, and in particular, the releasability around the islands 611 and 613 can be improved.
  • the lead frame 60 also includes an island 61, a wiring portion 62, a main terminal 63 and a signal terminal 64 which are terminals for external connection, and a dummy terminal 65.
  • the lead frame 60 is substantially line symmetrical with respect to the center in the X direction except for the arrangement of the signal terminals 64. In FIG. 53, the center of the lead frame 60 in the X direction is indicated by an alternate long and short dash line.
  • the island 61 has islands 610 to 614.
  • the drive unit 80 is disposed on the island 610, and the switching elements 700H, 700L, 701H, and 701L are individually disposed on the islands 611, 612, 613, and 614.
  • the five islands 610 to 614 have substantially the same thickness and are arranged in the same plane in the Z direction.
  • the areas of the islands 611 to 614 along the XY plane are substantially equal to one another.
  • the heat radiation surfaces 610 a to 614 a of the islands 610 to 614 are exposed from the back surface 50 b of the sealing resin body 50.
  • the heat can be dissipated efficiently from the heat dissipation surfaces 610a to 614a.
  • the portion of the island 61 excluding the heat radiation surfaces 610a to 614a is sealed by a sealing resin body 50.
  • convex portions are provided on the side surfaces of each of the islands 61 in order to suppress peeling of the sealing resin body 50.
  • the island 610 has a substantially rectangular planar shape.
  • the drive unit 80 is disposed closer to the signal terminal 64 in the Y direction with respect to the island 610.
  • the island 610 has a non-arranged portion 610 c which is a portion where the drive portion 80 is not arranged on the opposite side to the signal terminal 64, ie, the islands 611 and 613 side. There is.
  • the non-arranged portion 610c can be pressed by a clamp jig (not shown).
  • the island 610 can be stabilized, and the bondability can be improved.
  • the pads 81 are concentrated on three sides of the drive unit 80 having a substantially rectangular planar shape, and the pads 81 on the side opposite to the signal terminal 64 are reduced. There is. In particular, the central pads 81 on the sides are reduced. Therefore, the island 610 can be clamped without disturbing the bonding wire 41.
  • the islands 611 to 614 are disposed around the island 610.
  • the islands 612 and 614 are provided to sandwich the island 610 in the X direction.
  • the islands 612 and 614 both have a substantially rectangular planar shape.
  • the islands 612 and 614 each have a predetermined gap with the island 610 in the X direction.
  • Two bonding wires 41 are connected to the islands 612 and 614, respectively.
  • the bonding wire 41 is connected to the end on the side of the island 610 in the islands 612 and 614, which is opposite to the end on the side of the signal terminal 64.
  • the islands 611 and 613 are provided on the side opposite to the signal terminal 64 in the Y direction with respect to the island 610.
  • the islands 611 and 613 are arranged side by side in the X direction with a predetermined gap.
  • the islands 611 and 613 both have a substantially rectangular planar shape.
  • the island 611 faces the islands 610 and 612 in the Y direction.
  • the island 613 faces the islands 610 and 614 in the Y direction.
  • the islands 611 and 613 are integrated by the connecting portion 615 as an island 61 on the upper arm side.
  • the connecting portion 615 extends in the X direction, and is disposed between the islands 611 and 613.
  • One end of the connecting portion 615 is continuous with the end of the island 611 on the island 613 side, and the other end is continuous with the end of the island 613 on the island 611 side.
  • the connecting portion 615 has substantially the same thickness as the islands 611 and 163, and is disposed in the same plane in the Z direction.
  • the heat release surface 615a opposite to the switching elements 700H and 701H is exposed from the back surface 50b of the sealing resin body 50.
  • the heat of the switching elements 700H and 701H can be dissipated from the heat dissipation surface 615a.
  • notches 615b are provided at both ends in the Y direction, whereby the connecting portion 615 is continuous with the centers of the end portions of the islands 611 and 613.
  • the notches 615 b have substantially the same depth on both sides, and the islands 611 and 613 including the connecting portion 615 have a substantially H shape. That is, in the integrated islands 611 and 613 and the connecting portion 615, the middle connecting portion 615 is a narrow portion, and the islands 611 and 613 sandwiching the connecting portion 615 are a wide portion.
  • Two bonding wires 41 are connected to the connecting portion 615.
  • the islands 61 are arranged in line symmetry in the X direction.
  • the wiring unit 62 has a wiring unit 620 for connecting the islands 611 and 612, a wiring unit 621 for connecting the island 612 and the negative terminal 63E1, a wiring unit 622 for connecting the islands 613 and 614, and an island.
  • a wiring portion 623 for connecting the 614 and the negative electrode terminal 63E2 is provided.
  • the wiring portion 620 is connected to the end of the island 612 opposite to the signal terminal 64.
  • the wiring portion 620 is connected to the end of the island 612 opposite to the island 610 side.
  • the wiring portion 620 is extended in the Y direction, and its tip portion is arranged in parallel with the island 611 while having a predetermined gap with the island 611 in the X direction.
  • the wiring portion 620 is disposed outside the island 611 in the X direction.
  • an output terminal 63P1 is connected. That is, in the present embodiment, in the Y direction, the island 612 is connected to one end of the wiring portion 620, and the output terminal 63P1 is connected to the other end.
  • the island 612 side is a narrow portion
  • the output terminal 63P1 side is a wide portion.
  • the wiring portion 621 is connected to the negative electrode terminal 63E1.
  • the wiring portion 621 extends from the negative electrode terminal 63E1 in the Y direction, and its tip end portion is disposed side by side with the island 612 while having a predetermined gap with the island 612 in the X direction.
  • the wiring portion 621 is disposed outside the island 612 in the X direction.
  • the wiring portion 621 is opposed to the wide portion of the wiring portion 620 in the Y direction.
  • the wiring portion 622 is connected to the end of the island 614 opposite to the signal terminal 64.
  • the wiring portion 622 is connected to the end of the island 614 opposite to the island 610 side.
  • the wiring portion 622 is extended in the Y direction, and the tip portion thereof is disposed in parallel with the island 613 while having a predetermined gap with the island 613 in the X direction.
  • the wiring portion 622 is disposed outside the island 613 in the X direction.
  • an output terminal 63P2 is connected. That is, in the present embodiment, the island 614 is connected to one end of the wiring portion 622 in the Y direction, and the output terminal 63P2 is connected to the other end.
  • the island 614 side is a narrow portion
  • the output terminal 63P2 side is a wide portion.
  • the wiring portion 623 is connected to the negative electrode terminal 63E2.
  • the wiring portion 623 extends from the negative electrode terminal 63E2 in the Y direction, and its tip end portion is disposed side by side with the island 614 while having a predetermined gap with the island 614 in the X direction.
  • the wiring portion 623 is disposed outside the island 614 in the X direction.
  • the wiring portion 623 is opposed to the wide portion of the wiring portion 622 in the Y direction.
  • the wiring portion 621, the island 612, the island 610, the island 614, and the wiring portion 623 are sequentially arranged in the X direction. Further, at the positions of the islands 611 and 613 in the Y direction, the wiring portion 620, the island 611, the island 613, and the wiring portion 622 are arranged in this order in the X direction.
  • the wiring portions 62 are arranged in line symmetry in the X direction.
  • the heat radiation surfaces 620 a to 623 a of the wiring portions 620 to 623 are exposed from the back surface 50 b of the sealing resin body 50.
  • heat can be dissipated from the heat dissipation surfaces 620a to 623a.
  • the portions of the wiring portions 620 to 623 excluding the heat radiation surfaces 620 a to 623 a are sealed by the sealing resin body 50.
  • convex portions are provided on the side surfaces of the wiring portions 62 in order to suppress peeling of the sealing resin body 50.
  • the portions of the island 61 and the wiring portion 62 are thicker than the portions of the main terminal 63, the signal terminal 64, and the dummy terminal 65. Between the broken lines shown in FIG. 53 are thick portions.
  • the heat of the switching element 70 and the drive unit 80 can be dissipated efficiently.
  • warpage of the lead frame 60 caused by curing and shrinkage of the sealing resin body 50 can be suppressed.
  • the main terminals 63 and the signal terminals 64 are thin, punching and bending workability can be improved.
  • the signal terminals 64 can be narrowed in pitch.
  • the main terminal 63 has positive electrode terminals 63B1 and 63B2, negative electrode terminals 63E1 and 63E2, and output terminals 63P1 and 63P2, as in the first embodiment.
  • the positive electrode terminal 63B1 is continuous with the island 611 of the switching element 700H.
  • the positive electrode terminal 63B1 extends from the end of the island 611 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c of the sealing resin body 50, is bent outside the sealing resin body 50, and extends in the Z direction. It extends upward.
  • the positive electrode terminal 63B2 is connected to the island 613 of the switching element 701H.
  • the positive electrode terminal 63B2 extends from the end of the island 613 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the positive electrode terminals 63B1 and 63B2 are also integrated. As shown in FIGS. 39 and 53, the positive electrode terminals 63B1 and 63B2 each have a base 63Ba, a connection portion 63Bb, and a connection portion 63Bc. The positive electrode terminals 63B1 and 63B2 are integrated by the connecting portion 63Bd.
  • the base 63Ba is a portion connected to the corresponding island 611 or 613.
  • the base 63 ⁇ / b> Ba is continuous with the islands 611 and 613 at a position closer to the connecting portion 615 than the center in the X direction of the corresponding islands 611 and 613.
  • positive electrode terminal 63B1, B2 has a bending part in the middle of each base 63Ba.
  • the base portion 63Ba is extended in the Y direction before the tie bar cut, and in the state after the tie bar cut and forming, has a substantially L shape in the YZ plane.
  • connection portion 63Bb is a connection portion with the positive electrode bus bar 27B. While integrating the islands 611 and 613, the connecting portion 63Bb is divided into two. In the X direction, the distance between the connection portions 63Bb is longer than any of the distance between the base portions 63Ba and the distance between the switching elements 700H and 701H.
  • the connecting portion 63Bc connects the base portion 63Ba and the connecting portion 63Bb.
  • the connecting portion 63Bb is drawn outward in the X direction from the corresponding base portion 63Ba by the connecting portion 63Bc.
  • the connecting portion 63Bd connects the base portions 63Ba adjacent to each other in the X direction.
  • the connecting portion 63Bd extends in the X direction.
  • One end of the connecting portion 63Bd is connected to the base 63Ba on the positive electrode terminal 63B1 side, and the other end is connected to the base 63Ba on the positive electrode terminal 63B2 side.
  • the output terminal 63P1 is disposed on the outer side in the X direction with respect to the positive electrode terminal 63B1.
  • the output terminal 63P1 is connected to one end of the wiring portion 620 as described above.
  • the output terminal 63P1 extends in the Y direction, protrudes from the same side surface 50c as the positive electrode terminal 63B1, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the output terminal 63P2 is connected to one end of the wiring portion 622 as described above.
  • the output terminal 63P2 is disposed on the outer side in the X direction with respect to the positive electrode terminal 63B2.
  • the output terminal 63P2 extends in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 are arranged in the order of the output terminal 63P1, the positive electrode terminal 63B1, the positive electrode terminal 63B2 and the output terminal 63P2 in the X direction.
  • the distance between the output terminal 63P1 and the positive electrode terminal 63B1 and the distance between the output terminal 63P2 and the positive electrode terminal 63B2 are shorter than the distance between the positive electrode terminals 63B1 and 63B2.
  • the distance here is the distance at the connection portion with the corresponding bus bar 27.
  • the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 are substantially L-shaped in the YZ plane.
  • the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 respectively have tie bar marks 66a and 66b as in the first embodiment.
  • the tie bar mark 66 a is a cut mark of the tie bar 660 a of the first stage
  • the tie bar mark 66 b is a cut mark of the tie bar 660 b of the second stage.
  • the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 have bent portions between tie bar marks 66a and 66b.
  • the negative electrode terminals 63E1 and 63E2 are disposed on the opposite side of the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 with the island 61 and the wiring portion 62 interposed therebetween.
  • the negative electrode terminal 63E1 extends in the Y direction, protrudes from the side surface 50d opposite to the positive electrode terminal 63B1, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the negative electrode terminal 63E2 extends in the Y direction, protrudes from the side surface 50d, is bent outside the sealing resin body 50, and extends upward in the Z direction.
  • the negative electrode terminals 63E1 and 63E2 are also substantially L-shaped in the YZ plane.
  • the negative electrode terminal 63E1 is continued to the end of the wiring portion 621 on the signal terminal 64 side.
  • the negative electrode terminal 63E2 is continued to the end of the wiring portion 623 on the signal terminal 64 side.
  • the negative electrode terminals 63E1 and 63E2 are connected to the island 610 by the connecting portion 69.
  • the connecting portion 69 is extended in the X direction.
  • An island 610 is continuous at the center of the connecting portion 69 in the X direction.
  • the connecting portion 69 is continuous with the end of the island 610 on the signal terminal 64 side.
  • the negative electrode terminal 63E1 is connected to one end of the connecting portion 69, and the negative electrode terminal 63E2 is connected to the other end.
  • the connecting portion 69 is thin like the main terminal 63 and the signal terminal 64.
  • the width of the connecting portion 69 is narrower than the width of the signal terminal 64.
  • the connecting portion 69 is continuous on the inner side in the X direction and the wiring portions 621 and 623 corresponding to the outer side in the X direction are continuous.
  • the negative electrode terminals 63E1 and 63E2 are disposed on the signal terminal 64 side, and the connection portion 69 suspends the island 610 from the negative electrode terminals 63E1 and 63E2 on both sides in the X direction.
  • This arrangement can improve the retention strength of the island 610. Further, since the holding strength can be secured by the connecting portion 69, the number of the signal terminals 64 can be increased as compared with the structure reinforced by the dummy terminals.
  • the negative electrode terminals 63E1 and 63E2 also have tie bar marks 66a and 66b, respectively.
  • the tie bar mark 66a is a cut mark of the tie bar 661a of the first stage
  • the tie bar mark 66b is a cut mark of the tie bar 661 b of the second stage.
  • Negative electrode terminal 63E1, 63E2 has a bending part between tie bar mark 66a, 66b.
  • the semiconductor module 40 has two positive electrode terminals 63B1 and 63B2 and two negative electrode terminals 63E1 and 63E2. Therefore, even if welding failure occurs at one of the positive electrode terminals 63B1 and 63B2, for example, the other can maintain the electrical connection. Compared with the structure which has only one positive electrode terminal and one negative electrode terminal, it can suppress that switching element 70 etc. fail by welding detachment.
  • the plurality of signal terminals 64 are arranged side by side in the X direction.
  • signal terminals 642 and 643 for error notification and a test terminal 644 are provided as the signal terminals 64.
  • the signal terminal 642 is a terminal for notifying the other semiconductor modules 40 constituting the rectifier circuit unit 30 that the switching element 70 is abnormal.
  • the signal terminal 643 is a terminal for notifying the regulator of an abnormality of the switching element 70.
  • the signal terminals 642 and 643 extend in the Y direction, project from the side surface 50 d, are bent outside the sealing resin body 50, and extend upward in the Z direction.
  • the signal terminals 642 and 643 are substantially L-shaped in the YZ plane.
  • the test terminal 644 is used to test the rectifier circuit unit 30, for example, to inspect the electrical characteristics before shipping the product.
  • the test terminal 644 extends in the Y direction and protrudes from the side surface 50 d.
  • the test terminal 644 is extended to substantially the same position as the first stage tie bar mark 66 a in the Y direction. Therefore, the test terminal 644 does not have a bend.
  • the sixteen signal terminals 64 two are signal terminals 642 and 643 for error notification, and the remaining 14 are test terminals 644.
  • the second terminal from both ends is used as signal terminals 642 and 643.
  • a capacitor 45 for noise absorption is arranged between the adjacent test terminals 644.
  • the capacitor 45 is a ceramic chip capacitor.
  • the electrode of the capacitor 45 is connected to the test terminal 644 by the solder 42.
  • four capacitors 45 are arranged.
  • connection portions which are projecting tips of the signal terminals 642 and 643 protruding from the side surface 50d are connection portions 63Bb of the positive electrode terminals 63B1 and 63B2 protruding from the side surface 50c to the bus bar 27B and The positions where the output terminals 63P1 and 63P2 do not overlap with the connection portions with the bus bars 27P1 and 27P2 are set.
  • the signal terminals 642 and 643 can be welded from the side surface 50c using the welding electrode in a state where the semiconductor module 40 is placed so that the side surface 50d side is the lower side and the side surface 50c is the upper side. Therefore, the assemblability can be improved.
  • test terminals 644 is a terminal 644 a connected to the island 610 via the connecting portion 69.
  • the test terminal 644a is set to the ground potential (GND) at the time of test.
  • the test terminal 644 a is connected to the pad 81 of the drive unit 80 by the bonding wire 41. Since the bonding wire 41 does not have to straddle other potential portions, the occurrence of short circuit can be suppressed.
  • test terminal 644a in order to secure the ground potential, bonding is performed to the test terminal 644a, not to the connection portion 69 which is extended in the X direction and is flexible.
  • the test terminal 644a is connected to the tie bars 661a and 661b.
  • the test terminal 644 a is wider than the connecting portion 69 and wider than the other signal terminals 64. Therefore, the bondability can be improved while securing the ground potential.
  • a through hole 69a is provided in the connecting portion 69 between the island 610 and the test terminal 644a.
  • the through hole 69a is provided to straddle the test terminal 644a in the X direction.
  • the sealing resin body 50 passes through the through holes 69 a and is disposed on both sides of the thin-walled connecting portion 69.
  • the bonding wire 41 connected to the test terminal 644 a passes over the through hole 69 a and is connected to the pad 81. According to this, due to the lock hole effect, it is possible to suppress the exfoliation on the drive unit 80 side from progressing to the connection portion of the bonding wire 41 in the test terminal 644a. Therefore, the connection reliability of the bonding wire 41 can be improved.
  • the end on the side to which the bonding wire 41 is connected is in the XY plane It inclines to the drive part 80 side.
  • the length of the bonding wire 41 can be shortened for the signal terminal 64 at a position away from the drive unit 80. Therefore, at the time of molding of the sealing resin body 50, generation of defects in the bonding wire 41 can be suppressed. Further, by shortening the wire length, the connection strength of the bonding wire 41 can be improved. In addition, generation of resonance can be suppressed at the time of ultrasonic bonding.
  • all the signal terminals 64 are integrated between the negative terminals 63E1 and 63E2 which are the main terminals 63. Therefore, the arrangement space of the external connection terminal can be reduced in the X direction. That is, waste space can be reduced and the size of the semiconductor module 40 can be miniaturized.
  • connection portion of the bonding wire 41 is flat.
  • the connection portions of the bonding wires 41 at the islands 612 and 614, the connection portion 615, and the signal terminal 64 are all flattened by tapping. Thereby, the connection reliability of the bonding wire 41 can be improved. In addition, burrs can be hit and crushed to suppress foreign matter biting during bonding.
  • the dummy terminals 65 are extended in the Y direction and project two from the side surface 50 c of the sealing resin body 50.
  • One of the dummy terminals 65 is extended in the Y direction from the end of the wiring portion 620 opposite to the island 612.
  • An output terminal 63P1 connected to the same wiring portion 620 is disposed outside the dummy terminal 65 in the X direction.
  • Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 622 opposite to the island 614.
  • An output terminal 63P2 connected to the same wiring portion 622 is disposed outside the dummy terminal 65 in the X direction.
  • the dummy terminal 65 is extended to substantially the same position in the Y direction as the tie bar mark 66a of the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 in the state after the tie bar cut. Therefore, the dummy terminal 65 does not have a bend.
  • the width of the dummy terminal 65 is smaller than the width of the main terminal 63.
  • the switching element 70 has a vertical structure, and the pad 71 and the source electrode 72 are formed on the surface opposite to the island 61 as in the first embodiment. In addition, a temperature sensitive diode is integrally formed. As shown in FIGS. 45 and 47, the drain electrode of the switching element 70 is connected to the corresponding island 61 via the solder 42. Source electrode 72 is connected to corresponding bridge member 90 via solder 42.
  • the switching element 70 has a planar rectangular shape. As shown in FIGS. 48 and 53, the pad 71 is disposed along one side of the switching element 70, specifically, the side opposite to the drive unit 80.
  • the switching element 70 has three pads 71, which are arranged in order of a gate electrode, an anode of a temperature sensitive diode, and a cathode.
  • the switching elements 700H and 701H on the upper arm side are arranged in line symmetry in the X direction.
  • the switching elements 700H and 701H are arranged such that the arrangement direction of the pads 71 is the X direction.
  • the lower arm side switching elements 700L and 701L are arranged in line symmetry in the X direction as in the corresponding islands 612 and 614.
  • the switching elements 700L and 701L are arranged such that the arrangement direction of the pads 71 is the Y direction. In the X direction, the switching element 700L, the switching element 700H, the switching element 701H, and the switching element 701L are arranged in this order.
  • the arrangement order of the switching element 70 and the arrangement order of the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 connected to the drain electrode of the switching element 70 coincide with each other. Further, the main terminal 63 and the signal terminal 64 protrude only from the opposite side surfaces 50c and 50d. Thereby, the layout of the lead frame 60 can be simplified, and the size of the semiconductor module 40 can be miniaturized. Further, the connection structure with the bus bar 27 can be simplified.
  • the drive unit 80 of the present embodiment has a drive circuit that generates a drive signal.
  • the drive unit 80 is configured as an IC chip such as an ASIC.
  • the driving unit 80 is also referred to as a control IC in order to control ON / OFF as well as driving the switching element 70.
  • the drive unit 80 is fixed to the island 610 via the conductive adhesive 43.
  • a plurality of pads 81 are formed on the surface of the drive unit 80 opposite to the surface fixed to the island 610.
  • a part of the pad 81 is connected to the pad 71 of the switching element 70 via the bonding wire 41.
  • Another pad 81 is connected to the connection portion 615, that is, the drains of the switching elements 700H and 701H via the bonding wire 41.
  • Another pad 81 is connected to the islands 612 and 614 via bonding wires 41. The rest of the pad 81 is connected to the signal terminal 64 through the bonding wire 41.
  • the drive circuit of the drive unit 80 controls the on / off of the switching element 70 based on the potentials of the islands 612 and 614, that is, phase voltages P1 and P2 that are output voltages to the rotating electrical machine unit 10.
  • the drive unit 80 is externally connected to the control circuit unit 26 through the signal terminals 642 and 643, with a circuit for protecting the switching element 70, a determination circuit for determining an abnormality of the switching element 70, and the determination result. Has a notification circuit to notify to. The details of the drive unit 80 will be described later.
  • the drive unit 80 has a substantially rectangular planar shape.
  • the drive units 80 are arranged in line symmetry with respect to the center line of the lead frame 60 in the X direction.
  • the switching elements 700 L and 701 L on the lower arm side are arranged in line symmetry with respect to the drive unit 80.
  • the driving unit 80 is disposed between the lower arm side switching elements 700L and 701H.
  • the pads 71 of the switching elements 700H and 701H are disposed outside the island 610 in the X direction.
  • the driving unit 80 has a substantially rectangular planar shape, and the pads 81 are provided on the sides facing the switching elements 70 respectively.
  • the pads 81 connected to the switching element 70 are integrated on three consecutive sides of the drive unit 80. Thereby, the length of the bonding wire 41 can be shortened. Only the pad 81 connected to the signal terminal 64 is disposed on the other side of the drive unit 80.
  • the switching element 70 has a substantially square shape.
  • the pads 71 are arranged in the vicinity of the center of one side of the switching element 70 along the side.
  • the bonding wires 41 can be connected to the pads 71 and 81 on the upper arm side and the lower arm side, which are different in the arrangement by 90 degrees, though being made common.
  • the length of the bonding wire 41 can be shortened.
  • the signal terminals 64 are collectively arranged on one side of the drive unit 80 in the Y direction. All the signal terminals 64 are arranged on the opposite side of the drive unit 80 to the switching elements 700H and 701H on the upper arm side. According to this, the connection structure with the drive part 80 can be simplified including the signal terminal 64. Therefore, the length of the bonding wire 41 can be shortened, and the size of the semiconductor module 40 can be reduced.
  • the drive unit 80 is disposed between the lower arm side switching elements 700L and 701L. Further, in the X direction, the switching elements 700H and 701H are arranged in line symmetry, and the switching elements 700L and 701L are arranged in line symmetry. That is, the four switching elements 70 are equally arranged in the XY plane. Then, as shown in FIG. 48, assuming that the distance between the switching elements 700H and 701H on the upper arm side is L1 and the distance between the switching elements 700L and 701L on the lower arm side is L2, the distance L2 is longer than the distance L1. It is done.
  • the switching elements 700L and 701L which are heated by heat received from the rotating electrical machine 10 are kept away from each other, so that thermal interference between the switching elements 700L and 701L It can reduce than the thermal interference between 701H.
  • thermal interference between the switching elements 700L and 701L can reduce than the thermal interference between 701H.
  • the heat radiation surfaces 611 a to 614 a of the islands 611 to 614 are exposed from the sealing resin body 50. Therefore, the heat of switching element 70 can be dissipated effectively.
  • the heat dissipation surface 610 a of the island 610 is exposed from the sealing resin body 50. Accordingly, the heat generated by the drive unit 80 and the heat received from the switching element 70 disposed around the drive unit 80 can be effectively dissipated.
  • the drive part 80 can also be miniaturized by the improvement of heat dissipation.
  • the heat radiation surfaces 620 a and 622 a of the wiring portions 620 and 622 are exposed from the sealing resin body 50.
  • the heat of the switching elements 700L and 701L can be dissipated from the heat radiation surfaces 620a and 622a.
  • the wiring portions 620 and 622 are connected to the output terminals 63P1 and 63P2, the heat from the rotary electric machine portion 10 can be effectively dissipated.
  • the heat transmitted to the switching elements 700L and 701L can be reduced.
  • the clip 900 is employed as the bridging member 90.
  • the semiconductor module 40 has four clips 900.
  • the connection distance between the source electrode 72 of the switching element 70 and the wiring portion 62 is made substantially equal to each other by the above-described line symmetrical arrangement. Therefore, the four clips 900 can be made common to one type, and the number of parts can be reduced (A173).
  • each of the clips 900 is arranged so that the extending direction is the X direction and the width direction is the Y direction.
  • the lead frame 60 before the tie bar cut has a tie bar 66 and an outer frame 67. And a connecting portion 68.
  • the tie bar 66 of this embodiment also has tie bars 660a and 660b on one side and tie bars 661a and 661b on the other side so as to sandwich the island 61 and the wiring portion 62 in the Y direction.
  • Each tie bar 66 is connected to the outer frame 67 at both ends in the X direction.
  • the tie bar 660a connects the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 to the outer frame 67.
  • the tie bars 660a and 660b are both connected to the extending portions in the Y direction of the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2, respectively.
  • the tie bars 660a and 660b are connected to the base 63Ba at, for example, the positive electrode terminals 63B1 and 63B2.
  • Each of the tie bars 660a and 660b extends in a straight line along the X direction.
  • the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 are bent between the tie bars 660a and 660b.
  • the islands 611 and 613 are connected to the tie bars 660a and 660b via the bases 63Ba of the corresponding positive electrode terminals 63B1 and 63B2.
  • the islands 612 and 614 and the wiring portions 620 and 621 are connected to the tie bars 660 a and 660 b via the corresponding dummy terminals 65 and output terminals 63 P 1 and 63 P 2.
  • the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 have extension points from the islands 611 and 613 and the wiring parts 620 and 622 at the same start position in the Y direction, and the end point of the extension Almost the same position.
  • the positive electrode terminals 63B1 and 63B2 are connected to the outer frame 67 also in the Y direction by the connecting portion 68.
  • the connecting portion 68 is connected to the tip of each of the base portions 63Ba. That is, in the positive electrode terminals 63B1 and 63B2, the connection portion 63Bb with the bus bar 27B is continued to a different portion.
  • the connecting portion 68 extends in the Y direction.
  • the connecting portion 63 ⁇ / b> Bb is disposed outside the connecting portion 68 in the X direction.
  • the semiconductor module 40 has a connection mark 68 a which is a cut mark of the connection portion 68 after the tie bar cut.
  • Dummy terminals 65 connected to the same wiring portions 620 and 622 as the output terminals 63P1 and 63P2 are extended along the corresponding output terminals 63P1 and 63P2.
  • the dummy terminal 65 is extended to the outer frame 67 in the Y direction.
  • the tie bar 661a connects the negative electrode terminals 63E1 and 63E2 and the signal terminal 64 to the outer frame 67.
  • the tie bars 661a and 661b are both connected to the extending portions of the negative terminals 63E1 and 63E2 and the signal terminal 64 in the Y direction.
  • the negative terminals 63E1 and 63E2 and the signal terminal 642 are bent between the tie bars 661a and 661b.
  • the wiring portions 621 and 623 are connected to the tie bars 661 a and 661 b via the negative electrode terminals 63E1 and 63E2.
  • the island 610 is connected to the tie bars 661a and 661b via the connection portion 69 and the negative electrode terminals 63E1 and 63E2.
  • the island 610 is connected to the tie bars 661 a and 661 b through the connecting portion 69 and the test terminal 644 a.
  • the test terminal 644a is connected to the outer frame 67 opposite to the island 610 side as described above.
  • connection between the main terminal 63 and the bus bar 27 is not connected to the outer frame 67 and is free.
  • the signal terminal 64 is connected to the outer frame 67 in the Y direction.
  • the signal terminal 64 is disconnected from the outer frame 67 at the time of tie bar cutting. Since the signal terminal 64 is connected to the outer frame 67, deformation of the tie bars 661a and 661b can be suppressed at the time of molding.
  • Connecting portions 68 are respectively disposed between the signal terminal 64 and the negative electrode terminals 63E1 and 63E2.
  • the connecting portion 68 extends in the Y direction, one end thereof is connected to the tie bar 661 a, and the other end is connected to the outer frame 67.
  • the connecting portion 68 is separated along with the tie bar 66.
  • the connecting portion 68 increases the number of hanging points with the outer frame 67, so that deformation of the tie bars 661a and 661b can be suppressed at the time of molding. Therefore, the positional accuracy of the negative electrode terminals 63E1 and 63E2 and the signal terminals 642 and 643 can be improved.
  • the second tier tie bars 660b and 661b are wider than the first tier tie bars 660a and 661a. Since the width of the tie bars 660a and 661a is narrow, the tie bars 660a and 661a do not obstruct the bending of the main terminals 63 and the signal terminals 64, and the size of the semiconductor module 40 can be miniaturized. In addition, dimensional deviation at the time of tie bar cutting can be reduced. Since the width of the tie bars 660 b and 661 b is wide, the rigidity can be improved thereby, and the deformation of the tie bars 66 can be suppressed at the time of molding the sealing resin body 50.
  • the arrangement portion 60a of the clip 900 in the island 61 and the arrangement portion 60b in the wiring portion 62 in which the same clip 900 is arranged are arranged side by side in the X direction. That is, the arranging direction of the placement parts 60a and 60b with respect to the same clip 900 is the same as the extending direction of the first stage tie bars 660a and 661a to which the island 61 and the wiring part 62 are connected. In this manner, since the maximum length from the tie bar 66 to the clip 900 can be increased by parallel arrangement, the stress acting on the junction between the islands 611 to 614 and the corresponding switching element 70 can be reduced. it can. In the semiconductor module 40 after tie bar cutting, the alignment direction of the tie bar marks 66 a of the first stage disposed on the same side with respect to the island 61 and the extension direction of the clips 900 are the same (X direction). It is done.
  • the island 612 and the wiring portion 620, and the island 614 and the wiring portion 622 are respectively connected to the same tie bars 660a and 660b at a plurality of locations. According to this, it is possible to suppress the deformation of the tie bars 660a and 660b at the time of molding. By suppressing the tie bar deformation, it is possible to reduce the stress acting on the junction between the islands 612 and 614 and the corresponding switching elements 700L and 701L. In addition, it is possible to suppress the drooping of the islands 612 and 614 at positions away from the output terminals 63P1 and 63P2.
  • the island 612 and the wiring portion 620 are connected to the tie bar 660 a via the output terminal 63 P 1 and the dummy terminal 65.
  • the island 614 and the wiring portion 622 are connected to the tie bar 660a via the output terminal 63P2 and the dummy terminal 65.
  • the dummy terminal 65 is connected to the outer frame 67 in the Y direction. Also by this, the rigidity of the lead frame 60 can be improved, and for example, deformation of the tie bars 660a and 660b can be suppressed.
  • the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 can not be connected to the outer frame 67, so connectivity with the bus bar 27 can be secured.
  • the islands 612 and 614 and the wiring parts 621 and 623 in which the same clip 900 is disposed are connected to different tie bars 660a and 661a. Since the islands 612 and 614 and the wiring portions 621 and 623 are both suspended with respect to the tie bar 66, deformation of the tie bar 66 can be suppressed at the time of molding. Further, since the extension direction of the clip 900 is the same X direction as the tie bar 66, it is possible to suppress the shear stress in the X direction with respect to the joint portion of the switching element 70.
  • the islands 611 and 613 are connected to the tie bars 660a and 660b via the positive electrode terminals 63B1 and 63B2.
  • the positive electrode terminals 63B1 and 63B2 are connected to the outer frame 67 by the connecting portion 68 except for the connection portion 63Bb with the positive electrode bus bar 27B.
  • the rigidity of lead frame 60 can be improved, and deformation of tie bars 660a and 660b can be more effectively suppressed, for example.
  • the connecting portion 68 is connected to the portion excluding the connecting portion 63Bb, it does not affect the welding between the connecting portion 63Bb and the positive electrode bus bar 27B.
  • the drive unit 80 includes a voltage detection circuit 82, a temperature detection circuit 83, a determination circuit 84, a drive circuit 85, and a notification circuit 86.
  • the upper arm side is also referred to as high side
  • the lower arm side is also referred to as low side.
  • the voltage detection circuit 82 corresponds to a voltage detection unit.
  • the voltage detection circuit 82 detects the voltage between the main electrodes of the switching element 70 constituting each arm, that is, the voltage Vds between the drain and the source, or the phase voltages P1 and P2 of the upper and lower arms of each phase.
  • the phase voltage P1 is an output voltage of the first upper and lower arms by the switching elements 700H and 700L.
  • the phase voltage P2 is an output voltage of the second upper and lower arms by the switching elements 701H and 701L.
  • the phase voltages P1 and P2 can be detected from the islands 612 and 614 as described above.
  • the voltage Vds can be detected from the connecting portion 615 and the pad 71 for the source potential.
  • the temperature detection circuit 83 corresponds to a temperature detection unit.
  • the temperature detection circuit 83 detects the temperature of the switching element 70 based on a temperature sensitive diode.
  • the temperature detection circuit 83 detects the temperature by obtaining the anode potential and the cathode potential from the pad 71 for the anode and the cathode.
  • the determination circuit 84 corresponds to a determination unit.
  • the determination circuit 84 determines, based on the voltage value detected by the voltage detection circuit 82, whether or not the switching element 70 is shorted. For example, when switching element 701H is shorted, phase voltage P2 is fixed at power supply voltage VB, and when switching element 701L is shorted, phase voltage P2 is fixed at the ground potential. When switching element 701H is shorted, voltage Vds continues at a constant value of zero, and when switching element 701L is shorted, the source of switching element 701H sticks to the ground, so that voltage Vds is a constant value larger than zero. Continue at (power supply voltage VB).
  • the determination circuit 84 can determine whether or not the switching element 70 is shorted.
  • the determination circuit 84 determines, based on the temperature (forward voltage Vf) detected by the temperature detection circuit 83, whether or not a failure in temperature abnormality occurs in the switching element 70.
  • the drive circuit 85 corresponds to a drive unit.
  • the drive circuit 85 generates a drive signal (gate drive signal) for controlling the switching element 70.
  • the drive circuit 85 controls the on / off of the switching element 70 according to the determination result of the determination circuit 84.
  • the drive circuit 85 turns off the switching element 70 determined to have a failure, and turns on the switching element 70 on the same side as the phase different from the failed switching element 70. For example, when the switching element 700H on the high side fails, the switching element 700H is turned off and the switching element 701H is turned on. When the low side switching element 700L fails, the switching element 700L is turned off and the switching element 701L is turned on.
  • the notification circuit 86 corresponds to a notification unit.
  • the notification circuit 86 notifies another semiconductor module 40 constituting the control device unit 20 of the occurrence of the failure and the information on the side of the failed switching element 70.
  • the semiconductor module 40 has the signal terminal 642 for abnormality notification.
  • reference numerals 40a, 40b and 40c are given in FIG.
  • the semiconductor module 40a constitutes upper and lower arms of U phase and V phase
  • the semiconductor module 40b constitutes upper and lower arms of W phase and X phase
  • the semiconductor module 40c constitutes upper and lower arms of Y phase and Z phase.
  • the signal terminals 642 of the three semiconductor modules 40a, 40b, and 40c are connected to each other to enable bi-directional communication.
  • FIG. 56 shows an example of failure notification of the switching element 70 in the notification signal.
  • a pulse having a width (Hi width) at time t1 indicates occurrence of a failure.
  • a pulse transmitted after a pulse indicating failure occurrence and having a width of time t2 narrower than time t1 indicates a failure on the high side.
  • a pulse transmitted after a pulse indicating failure occurrence and having a width of time t3 narrower than time t1 and wider than time t2 indicates a low side failure.
  • the time t2 may be wider than the time t3. In this way, high side faults and low side faults can be distinguished by changing the pulse width (duty ratio).
  • FIG. 57 shows control when a short failure occurs in the switching element 701L of the semiconductor module 40a. If the determination circuit 84 determines that a short failure has occurred in the switching element 701L based on the voltage value detected by the voltage detection circuit 82, the drive circuit 85 first turns off the switching element 701L and is another phase and is the same. The side switching element 700L is turned on. The other switching elements 70 are turned off. Further, the notification circuit 86 outputs, to the other semiconductor modules 40b and 40c, a notification signal indicating that a failure has occurred on the low side.
  • the drive circuit 85 of the semiconductor modules 40 b and 40 c turns off all the switching elements 70 when receiving the notification signal indicating the failure. This can suppress the flow of through current.
  • the drive circuit 85 turns on all the low-side switching elements 700L and 701L in which a failure occurs in the semiconductor module 40a.
  • FIG. 58 shows a reference example, specifically, a timing chart in the case where a control device unit is configured by using six semiconductor modules constituting upper and lower arms for one phase.
  • a notification signal indicating the failure is output to the other five semiconductor modules. Therefore, after passing a predetermined communication time, the switching elements on the same side are turned on in the other semiconductor modules. Therefore, during communication, current concentrates only on the failed switching element. At the time of power generation, even if the faulty switching element is turned off, the current flows through the parasitic diode, so it can not be shut off.
  • the drive circuit 85 executes the control described above. For this reason, as shown in FIG. 59, when a failure occurs, the switching element 70 on the same side which is another phase in the same semiconductor module 40 is turned on. As described above, when a failure occurs, the normal phase which has not failed in the same semiconductor module 40 immediately shifts to the protection operation. Thus, a current path is formed in addition to the failed switching element 70. Therefore, it is possible to suppress current concentration on the failed switching element 70. Further, when the communication is completed, the switching element 70 on the same side is turned on also in the other semiconductor modules 40. Thereby, the current path is further increased, so that the stress of the switching element 70, the current stress, and the thermal stress can be reduced.
  • FIG. 60 shows control when a temperature abnormality occurs in the switching element 701H of the semiconductor module 40a. If the determination circuit 84 determines that a failure in temperature abnormality has occurred in the switching element 701H based on the temperature detected by the temperature detection circuit 83, the drive circuit 85 first turns off the switching element 701H and is another phase. The switching element 700H on the same side is turned on. The other switching elements 70 are turned off. Further, the notification circuit 86 outputs a notification signal indicating that a failure has occurred on the high side to the other semiconductor modules 40 b and 40 c.
  • the drive circuit 85 of the semiconductor modules 40 b and 40 c turns off all the switching elements 70 when receiving the notification signal indicating the failure. This can suppress the flow of through current.
  • the drive circuit 85 turns on all of the high-side switching elements 700H and 701H in which a failure occurs in the semiconductor module 40a. Therefore, even when the temperature abnormality occurs, the same effect as the short failure can be obtained.
  • the open failure is a failure in which no current flows, the phase voltages P1 and P2 may become abnormal due to inductance components of the stator winding 121 and the like, which may lead to a further failure.
  • FIG. 61 when an open failure occurs, all the switching elements 70 are turned off. Thereby, secondary failure can be suppressed.
  • FIG. 61 shows an example where an open failure has occurred in the switching element 701L.
  • FIG. 62 shows a first modification of the drive unit 80.
  • the drive unit 80 acquires the processing circuit 87 executing predetermined processing and the phase voltages P1 and P2, respectively. When at least one of the phase voltages P1 and P2 exceeds the threshold voltage, the processing circuit 87 is activated from the sleep state. And a power supply circuit 89 for supplying power to the processing circuit 87.
  • the processing circuit 87 corresponds to a processing unit
  • the start circuit 88 corresponds to a start unit
  • the power supply circuit 89 corresponds to a power supply unit.
  • FIG. 63 shows a more specific configuration of the drive unit 80.
  • the processing circuit 87 includes an analog circuit 870 and a digital circuit 871.
  • the processing circuit 87 includes, for example, the voltage detection circuit 82, the temperature detection circuit 83, the determination circuit 84, the drive circuit 85, and the notification circuit 86 described above.
  • the start-up circuit 88 includes an OR gate 880 and a start switch 881 provided downstream of the OR gate 880. Phase voltages P1 and P2 are input to the OR gate 880.
  • the OR gate 880 outputs a Hi level signal when at least one of the phase voltages P1 and P2 exceeds a preset threshold voltage Vth. Thus, the start switch 881 is switched from off to on.
  • the start switch 881 When the start switch 881 is turned on, the power supply circuit 89 is connected to the ground to start operation. Then, the power supply VCC1 is supplied to the analog circuit 870, and the power supply VCC2 is supplied to the digital circuit 871. Thereby, the analog circuit 870 and the digital circuit 871 are switched from the sleep state to the awake state.
  • FIG. 64 shows a case where the phase voltage P2 is fixed to the ground potential due to a short circuit failure of the switching element 701L.
  • the power supply circuit 89 is operated by the phase voltage P1 opposite to the short failure, whereby the power supplies VCC1 and VCC2 can rise and the processing circuit 87 can be activated.
  • the processing circuit 87 can be activated from the sleep state. Therefore, the drive unit 80 can detect a failure of the switching element 70 and protect the failed switching element 70.
  • the circuit delay is omitted.
  • FIG. 65 shows a state where a failure occurs in the digital circuit 871 described above and the drive signal output to the driver 870a of each of the switching elements 700H and 701L among the driver 870a which is the analog circuit 870 is fixed on. If such a failure occurs, as indicated by a broken line arrow in FIG. 65, there is a possibility that a through current may be generated across different phases via the rotating electrical machine unit 10 side, specifically the stator winding 121 etc. is there.
  • the analog circuit 870 r includes a driver 870 ar and a comparator which is a voltage detection circuit 82 r.
  • the digital circuit 871 r includes a drive circuit 85 r, an AND gate 871 ar, and a NOT gate 871 br.
  • r is added to the end of the reference numerals of the relevant elements of this embodiment.
  • the NOT gate 871br is provided between one input of the AND gate 871ar and the voltage detection circuit 82r.
  • the drive signal generated by the drive circuit 85r and the inverted value of the voltage Vds detected by the voltage detection circuit 82r are input to the AND gate 871ar.
  • the output of the AND gate 871ar is input to the driver 870ar.
  • FIG. 66 shows the time of power generation of the rotary electric machine 1 as indicated by solid arrows. Since the voltage Vds indicates zero (0) in which the current direction is normal, the drive signal output from the AND gate 871ar is maintained at 1. As a result, the switching element 70r is kept on.
  • the digital circuit 871 r may not execute a desired operation.
  • the NOT gate 871 br is broken and the inverting function is lost.
  • the drive signal output from the AND gate 871ar is 1 because the voltage Vds is not inverted before the input even though 1 is output indicating an abnormality. It becomes. As a result, the switching element 70 continues to be turned on.
  • FIG. 68 shows a second modification of the drive unit 80.
  • the processing circuit 87 includes a digital circuit 872 different from the digital circuit 871 including the driving circuit 85.
  • the digital circuit 872 is activated by being supplied with a power supply VCC3 different from the power supply VCC2 supplied from the power supply circuit 89 to the digital circuit 871, specifically, a voltage lower than the power supply VCC2.
  • the power supply VCC3 is set to a voltage lower than the power supply VCC2, for example, via a voltage drop resistance.
  • the digital circuit 872 includes an AND gate 872a and a NOT gate 872b.
  • the NOT gate 872 b is provided between one input of the AND gate 872 a and the voltage detection circuit 82.
  • the drive signal output from the AND gate 871a and the inverted value of the voltage Vds are input to the AND gate 872a.
  • the output of the AND gate 872a is input to the driver 870a.
  • the switching element 70 is operated if the direction of the current flowing through the switching element 70 is abnormal. You can switch from on to off. Also, even if a fault occurs in, for example, the NOT gate 872b of the digital circuit 872 and the inversion function is lost, the switching element 70 can be switched from on to off if the direction of the current flowing through the switching element 70 is abnormal. it can. Therefore, redundancy can be improved.
  • the configuration of the semiconductor module 40 shown in the first embodiment can be applied to the rotary electric machine 1 shown in the second embodiment.
  • the configuration of the semiconductor module 40 shown in the second embodiment can be applied to the rotary electric machine 1 shown in the first embodiment.
  • Part of the configuration of the semiconductor module 40 shown in the first embodiment can be combined with the semiconductor module 40 shown in the second embodiment.
  • the configuration of the sealing resin body 50 shown in the first embodiment can be combined with the second embodiment.
  • the lead frame 60 shown in the first embodiment can be combined with the second embodiment.
  • the shunt resistor 901 shown in the first embodiment can be combined with the second embodiment.
  • a part of the configuration of the semiconductor module 40 shown in the second embodiment can be combined with the semiconductor module 40 shown in the first embodiment.
  • the arrangement of the island 61, the wiring portion 62, and the main terminal 63 shown in the second embodiment can be combined with the first embodiment.
  • the drive unit 80 shown in the second embodiment can be combined with the first embodiment.
  • the application target of the configuration in which the extending direction of the tie bar 66 and the extending direction of the bridging member 90, that is, the arranging direction of the placement portions 60a and 60b are substantially parallel is not limited to the above example. If a plurality of islands 61 and wiring connected to the switching element 70 via the bridging member 90 and having a wire different from the island 61 on which the switching element 70 is disposed are provided, variation in the height direction is likely to occur. In particular, when the plurality of islands 61 are arranged in the extending direction of the tie bar 66, the tie bar 66 becomes long.
  • two switching elements 70 constituting upper and lower arms for one phase are disposed in the semiconductor module 40, and islands 61 in which the switching elements 70 are individually disposed are aligned in the X direction which is the extension direction of the tie bar 66.
  • the wiring different from the island 61 in which the switching element 70 is disposed is, for example, another island 61 or a wiring portion 62.
  • the plurality of switching elements 70 are not limited to those constituting the upper and lower arms.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Control Of Ac Motors In General (AREA)

Abstract

High-side switching elements (700H, 701H) and low-side switching elements (700L, 701L) used as switching elements (70) constituting the upper/lower arms of a plurality of phases constitute a semiconductor module (40). This control device for controlling the drive of the switching elements is provided with: a voltage detection unit (82) for detecting the voltage between the main electrodes of each of the switching elements or the phase voltage of each phase; a determination unit (84) for determining, on the basis of the detected voltage value, whether a short-circuit failure occurs in the switching elements or not; and a drive unit (85) for, when a failure has occurred, turning off the switching element in which the failure has occurred and turning on the switching element having a phase different from that of the switching element in which the failure has occurred and on the same side as the switching element in which the failure has occurred.

Description

制御装置Control device 関連出願の相互参照Cross-reference to related applications
　本出願は、２０１７年１０月１９日に出願された日本特許出願番号２０１７－２０２７３８号に基づくもので、ここにその記載内容を援用する。 This application is based on Japanese Patent Application No. 2017-202738 filed on October 19, 2017, the contents of which are incorporated herein by reference.
　本開示は、上下アームを構成するスイッチング素子の駆動を制御する制御装置に関するものである。 The present disclosure relates to a control device that controls driving of switching elements that constitute upper and lower arms.
　特許文献１には、一相分の上下アームを構成するスイッチング素子と、スイッチング素子の駆動を制御する制御装置（制御回路）とが一体化され半導体モジュールが開示されている。 Patent Document 1 discloses a semiconductor module in which switching elements constituting upper and lower arms for one phase and a control device (control circuit) for controlling driving of the switching elements are integrated.
　上記構成の場合、回転電機の固定子巻線の相数と同じ数の半導体モジュールが必要となる。したがって、上アーム及び下アームの一方がショート故障、又は、温度異常の故障を発生した場合に、故障した半導体モジュールの制御装置から他の半導体モジュールの制御装置への通信期間において、故障したスイッチング素子に電流が集中する。よって、スイッチング素子を適切に保護することができない。 In the case of the above configuration, the same number of semiconductor modules as the number of phases of the stator winding of the rotating electrical machine are required. Therefore, when one of the upper arm and the lower arm generates a short circuit failure or a temperature abnormal failure, the switching element failed in the communication period from the control device of the failed semiconductor module to the control device of the other semiconductor module. Current concentrates on the Therefore, the switching element can not be properly protected.
　制御装置は、通常、上下アームの出力電圧である相電圧をトリガとして、スリープ状態から起動される。しかしながら、上記した構成では、下アームがショート故障した場合に、制御装置を起動できない。このため、制御装置が、スイッチング素子の故障を検知してスイッチング素子を適切に保護することができない。 The control device is normally activated from the sleep state using a phase voltage which is an output voltage of the upper and lower arms as a trigger. However, in the configuration described above, the control device can not be activated when the lower arm fails in a short circuit. Therefore, the control device can not detect the failure of the switching element and appropriately protect the switching element.
特開２０１１-１６６８４７号公報JP 2011-166847 A
　本開示は、故障時にスイッチング素子を適切に保護できる制御装置を提供することを目的とする。 An object of the present disclosure is to provide a control device capable of appropriately protecting a switching element in the event of a failure.
　本開示の第一の態様にしたがって、複数相の上下アームを構成するスイッチング素子としてのハイサイドのスイッチング素子及びローサイドのスイッチング素子とともに半導体モジュールを構成し、前記スイッチング素子の駆動を制御する制御装置は、各アームを構成する前記スイッチング素子の主電極間の電圧、又は、各相上下アームの相電圧を検出する電圧検出部と、前記電圧検出部により検出された電圧値に基づいて、前記スイッチング素子にショート故障が生じているか否かを判定する判定部と、前記判定部により故障が生じたと判定されると、故障が生じた前記スイッチング素子をオフさせるとともに、故障した前記スイッチング素子とは別の相であって同じサイドの前記スイッチング素子をオンさせる駆動部とを備える。 According to a first aspect of the present disclosure, there is provided a control device that configures a semiconductor module with a high-side switching element and a low-side switching element as switching elements configuring upper and lower arms of multiple phases and controls driving of the switching elements. A voltage detection unit that detects a voltage between main electrodes of the switching element that configures each arm, or a phase voltage of each phase upper and lower arm, and the switching element based on a voltage value detected by the voltage detection unit And a determination unit for determining whether or not a short circuit failure has occurred, and turning off the switching element in which the failure has occurred if it is determined by the determination unit that a failure has occurred, and And a driver for turning on the switching elements on the same side.
　この制御装置によれば、ショート故障が発生すると、故障したスイッチング素子をオフさせる。また、同一の半導体モジュール内における別の相であって同じサイドのスイッチング素子をオンさせる。このように、同一半導体モジュール内において、故障していない正常な相が直ちに保護動作に移行する。 According to this control device, when a short circuit failure occurs, the failed switching element is turned off. In addition, the switching element of another phase in the same semiconductor module and on the same side is turned on. Thus, in the same semiconductor module, a normal phase which has not failed is immediately transferred to the protection operation.
　したがって、故障したスイッチング素子に電流が集中するのを抑制することができる。以上により、ショート故障時において、スイッチング素子を適切に保護することができる。 Therefore, it is possible to suppress current concentration on the failed switching element. As described above, the switching element can be appropriately protected at the time of the short failure.
　本開示の第二の態様にしたがって、複数相の上下アームを構成するスイッチング素子としてのハイサイドのスイッチング素子及びローサイドのスイッチング素子とともに半導体モジュールを構成し、前記スイッチング素子の駆動を制御する制御装置は、各アームを構成する前記スイッチング素子の温度を検出する温度検出部と、前記温度検出部により検出された温度に基づいて、前記スイッチング素子に温度異常の故障が生じているか否かを判定する判定部と、前記判定部により故障が生じたと判定されると、故障が生じた前記スイッチング素子をオフさせるとともに、故障した前記スイッチング素子とは別の相であって同じサイドの前記スイッチング素子をオンさせる駆動部とを備える。 According to a second aspect of the present disclosure, there is provided a control device that configures a semiconductor module together with a high-side switching element and a low-side switching element as switching elements configuring upper and lower arms of multiple phases and controls driving of the switching elements. Determining whether or not a temperature abnormality failure has occurred in the switching element based on a temperature detection unit that detects the temperature of the switching element that configures each arm, and the temperature detected by the temperature detection unit And, when it is determined by the determination unit that a failure has occurred, the switching device that has a failure is turned off, and the switching device on the same side that is a phase different from the switching device that has a failure is turned on. And a drive unit.
　この制御装置によれば、温度異常による故障が発生すると、故障したスイッチング素子をオフさせる。また、同一の半導体モジュール内における別の相であって同じサイドのスイッチング素子をオンさせる。このように、同一半導体モジュール内において、故障していない正常な相が直ちに保護動作に移行する。 According to this control device, when a failure due to a temperature abnormality occurs, the failed switching element is turned off. In addition, the switching element of another phase in the same semiconductor module and on the same side is turned on. Thus, in the same semiconductor module, a normal phase which has not failed is immediately transferred to the protection operation.
　したがって、故障したスイッチング素子に電流が集中するのを抑制することができる。以上により、温度異常による故障時において、スイッチング素子を適切に保護することができる。 Therefore, it is possible to suppress current concentration on the failed switching element. Thus, the switching element can be appropriately protected at the time of failure due to temperature abnormality.
　本開示の第三の態様にしたがって、複数相の上下アームを構成するスイッチング素子の駆動を制御する制御装置は、所定の処理を実行する処理部と、前記複数相の上下アームの相電圧をそれぞれ取得し、前記相電圧の少なくとも１つが閾値電圧を超えると、前記処理部をスリープ状態から起動させる起動部とを備える。 According to a third aspect of the present disclosure, a control device that controls driving of switching elements forming upper and lower arms of a plurality of phases includes a processing unit that executes a predetermined process and phase voltages of the upper and lower arms of the plurality of phases. And an activation unit configured to activate the processing unit from a sleep state when at least one of the phase voltages exceeds a threshold voltage.
　この制御装置によれば、前記相電圧の少なくとも１つが閾値電圧を超えると、前記処理部をスリープ状態から起動させる起動部とを備える。したがって、スイッチング素子を適切に保護することができる。 According to this control device, the control unit includes: an activation unit that activates the processing unit from a sleep state when at least one of the phase voltages exceeds a threshold voltage. Therefore, the switching element can be properly protected.
　本開示についての上記目的およびその他の目的、特徴や利点は、添付の図面を参照しながら下記の詳細な記述により、より明確になる。その図面は、
第１実施形態の制御装置一体型回転電機を示す断面図であり、 制御装置部を示す拡大断面図であり、 等価回路図であり、 半導体モジュール及びバスバーの配置を示す平面図であり、 主端子とバスバーの接続構造を示す平面図であり、 半導体モジュールを示す斜視図であり、 半導体モジュールを示す正面図であり、 半導体モジュールを示す背面図であり、 半導体モジュールを示す上面図であり、 半導体モジュールを示す下面図であり、 図７に示すＸ１方向から見た側面図であり、 図７のXII-XII線に沿う断面図であり、 図７のXIII-XIII線に沿う断面図であり、 封止樹脂体を省略した斜視図であり、 分解斜視図であり、 封止樹脂体を省略した正面図であり、 封止樹脂体を省略した背面図であり、 封止樹脂体を省略した上面図であり、 封止樹脂体を省略した下面図であり、 図１６に示すＸ１方向から見た側面図であり、 タイバーカット前のリードフレームを示す平面図であり、 出力端子及び信号端子の配置を示す模式図であり、 スイッチング素子の温度を示す模式図であり、 シャント抵抗器を示す平面図であり、 図２４のXXV-XXV線に沿う断面図であり、 変形例を示す平面図であり、 変形例を示す平面図であり、 シャント抵抗器の配置の効果を示す図であり、 電流ループ及び渦電流による磁界相殺を示す図であり、 シャント抵抗器とタイバーの延設方向を示す図であり、 平行配置による効果を示す図であり、 変形例を示す平面図であり、 変形例を示す図であり、 第２実施形態の制御装置一体型回転電機を示す断面図であり、 等価回路図であり、 制御装置部側から見た平面図であり、 カバーを外した状態において、制御装置部側から見た平面図であり、 パワーアセンブリを示す分解図であり、 半導体モジュールを示す斜視図であり、 半導体モジュールを示す正面図であり、 半導体モジュールを示す背面図であり、 半導体モジュールを示す上面図であり、 半導体モジュールを示す下面図であり、 図４０に示すＸ１方向から見た側面図であり、 図４０のXLV-XLV線に沿う断面図であり、 封止樹脂体を省略した斜視図であり、 分解斜視図であり、 封止樹脂体を省略した正面図であり、 封止樹脂体を省略した背面図であり、 封止樹脂体を省略した上面図であり、 封止樹脂体を省略した下面図であり、 図４８に示すＸ１方向から見た側面図であり、 タイバーカット前のリードフレームを示す平面図であり、 駆動部を示す図であり、 複数の半導体モジュール間での接続構造を示す図であり、 故障を通知する信号を示す図であり、 ショート故障が生じた場合の制御を示す図であり、 参考例において、ショート故障が生じた場合のタイミングチャートであり、 ショート故障が生じた場合のタイミングチャートであり、 温度異常が生じた場合の制御を示す図であり、 オープン故障が生じた場合の制御を示す図であり、 駆動部の第１変形例を示す図であり、 駆動部の回路構成を示す図であり、 起動時のタイミングチャートであり、 デジタル回路故障時における相を跨いだ貫通電流を示す図であり、 貫通電流からスイッチング素子を保護する回路の参考例を示す図であり、 図６６に示す参考例において、デジタル回路が故障した場合の問題点を示す図であり、 駆動部の第２変形例を示す図である。 The above object and other objects, features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the attached drawings. The drawing is
FIG. 2 is a cross-sectional view showing a controller-integrated electric rotating machine according to a first embodiment; It is an expanded sectional view showing a control device part, Is an equivalent circuit diagram, FIG. 10 is a plan view showing the arrangement of semiconductor modules and bus bars; It is a plan view showing a connection structure of a main terminal and a bus bar, It is a perspective view showing a semiconductor module, It is a front view showing a semiconductor module, It is a rear view showing a semiconductor module, It is a top view which shows a semiconductor module, It is a bottom view showing a semiconductor module, FIG. 8 is a side view seen from the X1 direction shown in FIG. 7; 8 is a cross-sectional view taken along the line XII-XII in FIG. 7; FIG. 8 is a cross-sectional view taken along the line XIII-XIII of FIG. 7; It is the perspective view which abbreviate | omitted the sealing resin body, It is an exploded perspective view, It is the front view which omitted the sealing resin body, It is the rear view which omitted the sealing resin body, It is the top view which omitted the sealing resin body, It is the bottom view which omitted the sealing resin body, 17 is a side view seen from the X1 direction shown in FIG. 16; It is a plan view showing a lead frame before tie bar cut, It is a schematic diagram which shows arrangement | positioning of an output terminal and a signal terminal, It is a schematic diagram which shows the temperature of a switching element, It is a top view which shows a shunt resistor, 24 is a cross-sectional view taken along the line XXV-XXV of FIG. 24; It is a top view which shows a modification, It is a top view which shows a modification, FIG. 6 illustrates the effect of the placement of shunt resistors, FIG. 5 illustrates magnetic field cancellation by current loops and eddy currents; FIG. 5 is a diagram showing the extending direction of the shunt resistor and the tie bar, It is a figure which shows the effect by parallel arrangement, It is a top view which shows a modification, It is a figure showing a modification, FIG. 7 is a cross-sectional view showing a controller-integrated electric rotating machine of a second embodiment; Is an equivalent circuit diagram, It is a plan view seen from the controller side, In the state which removed the cover, it is the top view seen from the control apparatus part side, Fig. 6 is an exploded view of the power assembly; It is a perspective view showing a semiconductor module, It is a front view showing a semiconductor module, It is a rear view showing a semiconductor module, It is a top view which shows a semiconductor module, It is a bottom view showing a semiconductor module, 40 is a side view seen from the X1 direction shown in FIG. 40; 40 is a cross-sectional view along the line XLV-XLV in FIG. It is the perspective view which abbreviate | omitted the sealing resin body, It is an exploded perspective view, It is the front view which omitted the sealing resin body, It is the rear view which omitted the sealing resin body, It is the top view which omitted the sealing resin body, It is the bottom view which omitted the sealing resin body, FIG. 51 is a side view seen from the X1 direction shown in FIG. 48, It is a plan view showing a lead frame before tie bar cut, It is a figure showing a drive part, FIG. 7 is a diagram showing a connection structure between a plurality of semiconductor modules, It is a figure which shows the signal which notifies a failure, FIG. 17 is a diagram showing control when a short failure occurs, In the reference example, it is a timing chart when a short failure occurs, It is a timing chart when a short failure occurs, It is a figure showing control when temperature abnormality arises, FIG. 10 is a diagram showing control when an open failure occurs, It is a figure which shows the 1st modification of a drive part, It is a figure showing the circuit composition of a drive part, It is a timing chart at startup, FIG. 7 is a diagram showing a through current across phases at the time of digital circuit failure; FIG. 10 is a diagram showing a reference example of a circuit that protects a switching element from a through current, FIG. 73 is a diagram showing a problem when a digital circuit fails in the reference example shown in FIG. 66, It is a figure which shows the 2nd modification of a drive part.
　図面を参照しながら、複数の実施形態を説明する。複数の実施形態において、機能的に及び／又は構造的に対応する部分には、同一の参照符号を付与する。 Several embodiments will be described with reference to the drawings. In embodiments, functionally and / or structurally corresponding parts are provided with the same reference signs.
　（第１実施形態）
　（回転電機の概略構成）
　図１～図５に基づき、制御装置一体型回転電機の概略構成について説明する。図５では、主端子のうちの正極端子及び負極端子と、バスバーとの接続構造を示している。図４及び図５では、便宜上、信号端子及びダミー端子を省略している。 First Embodiment
(Schematic configuration of rotating electric machine)
The schematic configuration of the controller-integrated electric rotating machine will be described with reference to FIGS. 1 to 5. FIG. 5 shows a connection structure between the positive electrode terminal and the negative electrode terminal of the main terminals and the bus bar. In FIG.4 and FIG.5, the signal terminal and the dummy terminal are abbreviate | omitted for convenience.
　図１に示すように、制御装置一体型の回転電機１は、回転電機部１０と、回転電機部１０を制御する制御装置部２０を備えており、制御装置部２０が、制御対象である回転電機部１０と一体化されている。なお、回転電機１の説明において、回転軸に沿う方向を軸方向と示す。また、軸方向のうち、制御装置部２０側から回転電機部１０側に向かう方向を前方、回転電機部１０側から制御装置部２０側に向かう方向を後方と示す。軸方向に直交する方向を径方向と示す。 As shown in FIG. 1, the controller integrated electric rotating machine 1 includes a rotating electric machine unit 10 and a control unit 20 for controlling the rotating electric machine unit 10, and the control unit 20 controls rotation. It is integrated with the electric unit 10. In the description of the rotary electric machine 1, a direction along the rotation axis is referred to as an axial direction. Further, in the axial direction, the direction from the control device unit 20 side to the rotating electrical machine unit 10 side is referred to as the front, and the direction from the rotating electrical machine unit 10 side to the control device unit 20 is as the rear. The direction orthogonal to the axial direction is referred to as the radial direction.
　（回転電機部） 
　回転電機部１０は、車両に搭載され、バッテリから電力が供給されることで、車両を駆動するための駆動力を発生する。回転電機部１０は、たとえばエンジンを始動させる電動機（スタータモータ）として機能する。回転電機部１０は、エンジンから駆動力が供給されることで、バッテリを充電するための電力を発生する発電機（オルタネータ）として機能する。回転電機部１０は、ＩＳＧ（Integrated Starter Generator）とも称される。図１及び図２に示すように、回転電機部１０は、ハウジング１１と、固定子１２と、回転子１３と、プーリ１４と、スリップリング１５と、ブラシ１６と、回転角度検出用の磁石１７を備えている。 (Rotary electric machine part)
The rotating electrical machine unit 10 is mounted on a vehicle and generates power for driving the vehicle by being supplied with electric power from a battery. The rotating electrical machine unit 10 functions as, for example, a motor (starter motor) for starting an engine. The rotating electrical machine unit 10 functions as a generator (alternator) that generates electric power for charging the battery by being supplied with driving force from the engine. The rotating electrical machine unit 10 is also referred to as an ISG (Integrated Starter Generator). As shown in FIGS. 1 and 2, the rotating electrical machine unit 10 includes a housing 11, a stator 12, a rotor 13, a pulley 14, a slip ring 15, a brush 16, and a magnet 17 for detecting a rotation angle. Is equipped.
　ハウジング１１は、固定子１２及び回転子１３を収容している。ハウジング１１は、回転子１３を回転可能に支持している。ハウジング１１の軸方向後側には、制御装置部２０が固定されている。ハウジング１１は、軸方向前側に配置されたフロントハウジング１１０と、軸方向後側に配置されたリアハウジング１１１を有している。 The housing 11 accommodates the stator 12 and the rotor 13. The housing 11 rotatably supports the rotor 13. A control device unit 20 is fixed to the rear side in the axial direction of the housing 11. The housing 11 has a front housing 110 disposed on the front side in the axial direction and a rear housing 111 disposed on the rear side in the axial direction.
　固定子１２は、磁路の一部を構成するとともに、電力、具体的には交流が供給されることで回転磁界を発生する。また、回転子１３の発生する磁束と鎖交することで、交流を発生する。固定子１２は、固定子コア１２０と、固定子巻線１２１を有している。 The stator 12 forms a part of a magnetic path and generates a rotating magnetic field by being supplied with electric power, specifically, alternating current. Further, by interlinking with the magnetic flux generated by the rotor 13, an alternating current is generated. The stator 12 has a stator core 120 and a stator winding 121.
　固定子コア１２０は、略円環状をなしている。固定子コア１２０には、図示しない複数のスロットが設けられている。固定子巻線１２１は、固定子コア１２０のスロットに収容され、固定子コア１２０に保持されている。固定子巻線１２１は、固定子コア１２０に巻回されている。固定子巻線１２１として、Ｙ結線された三相巻線を用いている。図３に示すように、固定子巻線１２１は、Ｕ相、Ｖ相、Ｗ相の三相巻線からなる固定子巻線１２１ａと、Ｘ相、Ｙ相、Ｚ相の三相巻線からなる固定子巻線１２１ｂを有している。固定子巻線１２１ａ，１２１ｂは、互いに所定電気角（たとえば３０°）ずれて配置されている。 The stator core 120 has a substantially annular shape. The stator core 120 is provided with a plurality of slots (not shown). The stator winding 121 is accommodated in the slot of the stator core 120 and held by the stator core 120. The stator winding 121 is wound around the stator core 120. As the stator winding 121, a Y-connected three-phase winding is used. As shown in FIG. 3, the stator winding 121 includes a stator winding 121a consisting of U-phase, V-phase, and W-phase three-phase windings, and X-phase, Y-phase, and Z-phase three-phase windings. And a stator winding 121b. The stator windings 121a and 121b are arranged offset from each other by a predetermined electrical angle (for example, 30 °).
　回転子１３は、磁路の一部を構成するとともに、電力、具体的には直流が供給されることで磁極を形成する。回転子１３は、固定子巻線１２１の発生する磁束と鎖交することで、回転力を生じる。また、エンジンから供給される駆動力によって回転子１３が回転し、発生した磁束が固定子巻線１２１と鎖交することで、固定子巻線１２１が交流を生じる。回転子１３は、回転子コア１３０と、回転子巻線１３１と、ファン１３２と、回転軸１３３を有している。 The rotor 13 constitutes a part of a magnetic path and forms a magnetic pole by being supplied with electric power, specifically, direct current. The rotor 13 generates a rotational force by interlinking with the magnetic flux generated by the stator winding 121. Further, the rotor 13 is rotated by the driving force supplied from the engine, and the generated magnetic flux is interlinked with the stator winding 121, whereby the stator winding 121 generates an alternating current. The rotor 13 has a rotor core 130, a rotor winding 131, a fan 132, and a rotating shaft 133.
　回転子コア１３０は、回転子巻線１３１を収容する円環状の中空部１３０ａを有している。回転子コア１３０は、回転軸１３３が挿通状態で固定される貫通孔１３０ｂを有している。回転子１３は、回転子コア１３０の外周面が、固定子コア１２０の内周面と所定間隔を隔てて対向するように、配置されている。 The rotor core 130 has an annular hollow portion 130 a that accommodates the rotor winding 131. The rotor core 130 has a through hole 130 b to which the rotating shaft 133 is fixed in a state of being inserted. The rotor 13 is disposed such that the outer peripheral surface of the rotor core 130 faces the inner peripheral surface of the stator core 120 at a predetermined distance.
　回転子巻線１３１は、直流が供給されることで磁束を発生し、回転子コア１３０の外周面に磁極を形成する。回転子巻線１３１は、回転子コア１３０の中空部１３０ａに収容され、回転子コア１３０に保持されている。回転子巻線１３１は、界磁巻線とも称される。 The rotor winding 131 generates a magnetic flux by being supplied with direct current, and forms a magnetic pole on the outer peripheral surface of the rotor core 130. The rotor winding 131 is accommodated in the hollow portion 130 a of the rotor core 130 and held by the rotor core 130. The rotor winding 131 is also referred to as a field winding.
　ファン１３２は、回転子コア１３０と一体に設けられている。ファン１３２は、回転子コア１３０とともに回転し、回転電機１の外部の空気を、ハウジング１１に形成された貫通孔を通じて、回転電機部１０の内部及び制御装置部２０の内部に流通させる。ファン１３２は、回転軸１３３の延伸方向である軸方向において、回転子コア１３０の両端面にそれぞれ設けられている。 The fan 132 is provided integrally with the rotor core 130. The fan 132 rotates with the rotor core 130 and distributes the air outside the rotating electrical machine 1 to the inside of the rotating electrical machine unit 10 and the inside of the control device unit 20 through a through hole formed in the housing 11. The fans 132 are respectively provided on both end surfaces of the rotor core 130 in the axial direction which is the extending direction of the rotating shaft 133.
　回転軸１３３は、回転子コア１３０に固定されるとともに、ハウジング１１に回転可能に支持されている。回転軸１３３は、回転子コア１３０とともに回転する。回転軸１３３は、略円柱状をなしており、貫通孔１３０ｂに挿通された状態で、軸方向中央部が回転子コア１３０に固定されている。回転軸１３３は、シャフトとも称される。 The rotating shaft 133 is fixed to the rotor core 130 and rotatably supported by the housing 11. The rotating shaft 133 rotates with the rotor core 130. The rotation shaft 133 has a substantially cylindrical shape, and the axial center portion is fixed to the rotor core 130 in a state of being inserted into the through hole 130 b. The rotation shaft 133 is also referred to as a shaft.
　回転軸１３３の一部分は、フロントハウジング１１０の底壁に設けられた貫通孔を通じてフロントハウジング１１０の前方に突出している。回転軸１３３は、フロントハウジング１１０に回転可能に支持されている。回転軸１３３の一部分は、リアハウジング１１１の底壁に設けられた貫通孔を通じてリアハウジング１１１の後方に突出している。回転軸１３３は、リアハウジング１１１に回転可能に支持されている。 A portion of the rotation shaft 133 protrudes forward of the front housing 110 through a through hole provided in the bottom wall of the front housing 110. The rotation shaft 133 is rotatably supported by the front housing 110. A part of the rotation shaft 133 protrudes to the rear of the rear housing 111 through a through hole provided in the bottom wall of the rear housing 111. The rotating shaft 133 is rotatably supported by the rear housing 111.
　プーリ１４は、回転軸１３３のうち、フロントハウジング１１０から前方に突出した部分に連結されている。プーリ１４は、回転軸１３３とともに回転する。プーリ１４には、図示しないベルトが係合される。このベルトを介して、エンジンのクランクシャフトに回転軸１３３の回転運動が伝達される。 The pulley 14 is connected to a portion of the rotation shaft 133 that protrudes forward from the front housing 110. The pulley 14 rotates with the rotation shaft 133. A belt (not shown) is engaged with the pulley 14. The rotational movement of the rotating shaft 133 is transmitted to the crankshaft of the engine via the belt.
　スリップリング１５は、回転軸１３３のうち、リアハウジング１１１から後方に突出した部分の外周面に、絶縁部材１８を介して固定されている。スリップリング１５は、金属からなる円筒状の部材であり、配線を介して回転子巻線１３１に接続されている。 The slip ring 15 is fixed to an outer peripheral surface of a portion of the rotation shaft 133 which protrudes rearward from the rear housing 111 via an insulating member 18. The slip ring 15 is a cylindrical member made of metal and is connected to the rotor winding 131 via a wire.
　ブラシ１６は、たとえばバネにより、径方向において回転軸１３３側に押圧され、スリップリング１５の外周面に接触している。ブラシ１６は、ブラシホルダ１６０に保持されている。ブラシ１６及びスリップリング１５を介して、回転子巻線１３１に直流が供給される。 The brush 16 is, for example, pressed by a spring toward the rotating shaft 133 in the radial direction, and is in contact with the outer peripheral surface of the slip ring 15. The brush 16 is held by a brush holder 160. Direct current is supplied to the rotor winding 131 via the brush 16 and the slip ring 15.
　磁石１７は、回転子１３の回転角度を検出するための磁界を発生する。磁石１７は、回転軸１３３の軸方向後端部に固定されている。 The magnet 17 generates a magnetic field for detecting the rotation angle of the rotor 13. The magnet 17 is fixed to an axial rear end portion of the rotating shaft 133.
　（制御装置部）
　制御装置部２０は、回転電機部１０をオルタネータとして機能させる場合には、回転電機部１０の発生した電力を直流に変換し、バッテリへ電力の供給を行う。一方、回転電機部１０を電動機として機能させる場合には、バッテリから供給される電力を交流へと変換し、回転電機部１０へ電力の供給を行う。 (Control unit)
When the rotating electrical machine unit 10 functions as an alternator, the control device unit 20 converts the power generated by the rotating electrical machine unit 10 into direct current, and supplies the power to the battery. On the other hand, when the rotating electrical machine unit 10 is made to function as a motor, the power supplied from the battery is converted into an alternating current, and the power is supplied to the rotating electrical machine unit 10.
　図１及び図２に示すように、制御装置部２０は、ケース２１と、配線基板２２と、インバータ回路部２３と、ヒートシンク２４と、界磁回路部２５と、制御回路部２６と、バスバー２７を備えている。さらに制御装置部２０は、磁石１７とともに回転角度検出部を構成する図示しない回転角度検出素子などを備えている。制御装置部２０は、平滑用のコンデンサや、スナバ用のコンデンサを備えてもよい。 As shown in FIGS. 1 and 2, the controller unit 20 includes a case 21, a wiring board 22, an inverter circuit unit 23, a heat sink 24, a field circuit unit 25, a control circuit unit 26, and a bus bar 27. Is equipped. Furthermore, the control device unit 20 is provided with a rotation angle detection element (not shown) that constitutes a rotation angle detection unit together with the magnet 17. The controller unit 20 may include a smoothing capacitor and a snubber capacitor.
　ケース２１は、リアハウジング１１１の軸方向後端部に設けられている。ケース２１は、樹脂材料を用いて箱状に形成されている。ケース２１には、配線基板２２、インバータ回路部２３、ヒートシンク２４、界磁回路部２５、制御回路部２６、及び上記したブラシ１６などが収容されている。ケース２１は、本体部２１０と、蓋部２１１を有している。 The case 21 is provided at an axial rear end of the rear housing 111. The case 21 is formed in a box shape using a resin material. In the case 21, the wiring board 22, the inverter circuit unit 23, the heat sink 24, the field circuit unit 25, the control circuit unit 26, the above-described brush 16 and the like are accommodated. The case 21 has a main body portion 210 and a lid portion 211.
　本体部２１０には、配線基板２２、インバータ回路部２３、界磁回路部２５、及び制御回路部２６が固定されている。樹脂部材である本体部２１０には、バスバー２７及びその他の配線用のバスバーが固定されている。本体部２１０は、中央部に貫通孔２１０ａを有している。本体部２１０は、リアハウジング１１１の軸方向後端部に固定されている。蓋部２１１は、本体部２１０の後側を覆っている。 The wiring board 22, the inverter circuit unit 23, the field circuit unit 25, and the control circuit unit 26 are fixed to the main body unit 210. The bus bar 27 and other bus bars for wiring are fixed to the main body portion 210 which is a resin member. The main body portion 210 has a through hole 210 a at the central portion. The main body portion 210 is fixed to an axial rear end portion of the rear housing 111. The lid portion 211 covers the rear side of the main body portion 210.
　配線基板２２は、所謂プリント基板である。配線基板２２には、界磁回路部２５及び制御回路部２６が実装されている。図示を省略するが、配線基板２２には、電源回路なども実装されている。配線基板２２は、板厚方向が軸方向と略一致するように配置されている。配線基板２２は、回転軸１３３の周方向の一部に切り欠きを備えた略Ｕ字状をなしている。 The wiring board 22 is a so-called printed board. The field circuit unit 25 and the control circuit unit 26 are mounted on the wiring board 22. Although not shown, a power supply circuit and the like are also mounted on the wiring board 22. The wiring substrate 22 is disposed such that the thickness direction thereof substantially coincides with the axial direction. The wiring board 22 is substantially U-shaped with a notch at a part in the circumferential direction of the rotating shaft 133.
　配線基板２２は、インバータ回路部２３より軸方向前側に、リアハウジング１１１及びインバータ回路部２３と距離を隔てて配置されている。配線基板２２、インバータ回路部２３、界磁回路部２５、及び制御回路部２６は、ケース２１内において樹脂２８で封止されている。 The wiring board 22 is disposed on the front side in the axial direction with respect to the inverter circuit portion 23 at a distance from the rear housing 111 and the inverter circuit portion 23. The wiring substrate 22, the inverter circuit unit 23, the field circuit unit 25, and the control circuit unit 26 are sealed with a resin 28 in the case 21.
　インバータ回路部２３は、固定子巻線１２１に交流を供給する。インバータ回路部２３は、固定子巻線１２１から供給される交流を整流して、直流に変換する。インバータ回路部２３は、３つの半導体モジュール４０により構成されている。半導体モジュール４０の詳細については後述し、ここでは簡単な説明にとどめる。 The inverter circuit unit 23 supplies alternating current to the stator winding 121. The inverter circuit unit 23 rectifies alternating current supplied from the stator winding 121 and converts it into direct current. The inverter circuit unit 23 is configured by three semiconductor modules 40. Details of the semiconductor module 40 will be described later, and only a brief description will be given here.
　図３に示すように、半導体モジュール４０のそれぞれは、二相分の上下アームを構成する複数のスイッチング素子７０を有している。スイッチング素子７０としては、ＭＯＳＦＥＴやＩＧＢＴを採用することができる。本実施形態では、ｎチャネル型のＭＯＳＦＥＴを採用している。スイッチング素子７０は、寄生ダイオードを有している。３つの半導体モジュール４０のうち、第１の半導体モジュール４０がＵ相及びＶ相の上下アームを構成し、第２の半導体モジュール４０がＷ相及びＸ相の上下アームを構成し、第３の半導体モジュール４０がＹ相及びＺ相の上下アームを構成している。 As shown in FIG. 3, each of the semiconductor modules 40 has a plurality of switching elements 70 constituting upper and lower arms for two phases. As the switching element 70, a MOSFET or an IGBT can be employed. In the present embodiment, an n-channel MOSFET is employed. The switching element 70 has a parasitic diode. Of the three semiconductor modules 40, the first semiconductor module 40 constitutes upper and lower arms of U phase and V phase, the second semiconductor module 40 constitutes upper and lower arms of W phase and X phase, and the third semiconductor A module 40 constitutes upper and lower arms of Y phase and Z phase.
　本実施形態では、各アームが１つのスイッチング素子７０により構成されている。すなわち、半導体モジュール４０が、それぞれ４つのスイッチング素子７０を有している。半導体モジュール４０のそれぞれは、スイッチング素子７０として、第１の上下アームを構成する上アーム側のスイッチング素子７００Ｈ及び下アーム側のスイッチング素子７００Ｌと、第２の上下アームを構成する上アーム側のスイッチング素子７０１Ｈ及び下アーム側のスイッチング素子７０１Ｌを有している。スイッチング素子７００Ｈ，７００Ｌが直列接続され、スイッチング素子７０１Ｈ，７０１Ｌが直列接続されている。 In the present embodiment, each arm is configured by one switching element 70. That is, the semiconductor module 40 has four switching elements 70 each. In each of the semiconductor modules 40, as the switching element 70, the switching element 700H on the upper arm side and the switching element 700L on the lower arm side constituting the first upper and lower arms, and the switching on the upper arm side constituting the second upper and lower arm It has the element 701H and the switching element 701L on the lower arm side. Switching elements 700H and 700L are connected in series, and switching elements 701H and 701L are connected in series.
　上アーム側のスイッチング素子７００Ｈ，７０１Ｈの高電位側の電極、すなわちドレイン電極は、バッテリの正極側に接続され、下アーム側のスイッチング素子７００Ｌ，７０１Ｌの低電位側の電極、すなわちソース電極は、バッテリの負極側に接続されている。上アーム側のスイッチング素子７００Ｈ，７０１Ｈのソース電極と、対応する下アーム側のスイッチング素子７００Ｌ，７０１Ｌのドレイン電極が、互いに接続されている。 The high potential side electrode of the upper arm side switching elements 700H and 701H, ie, the drain electrode, is connected to the positive electrode side of the battery, and the low potential side electrode of the lower arm side switching elements 700L and 701L, ie, the source electrode is It is connected to the negative side of the battery. The source electrodes of the upper arm side switching elements 700H and 701H and the corresponding drain electrodes of the lower arm side switching elements 700L and 701L are connected to each other.
　第１の半導体モジュール４０において、第１の上下アームがＵ相上下アームを構成し、第２の上下アームがＶ相上下アームを構成している。スイッチング素子７００Ｈとスイッチング素子７００Ｌの接続点は、固定子巻線１２１ａのＵ相に接続されている。スイッチング素子７０１Ｈとスイッチング素子７０１Ｌの接続点は、固定子巻線１２１ａのＶ相に接続されている。 In the first semiconductor module 40, the first upper and lower arms constitute U-phase upper and lower arms, and the second upper and lower arms constitute V-phase upper and lower arms. The connection point between the switching element 700H and the switching element 700L is connected to the U phase of the stator winding 121a. The connection point between the switching element 701H and the switching element 701L is connected to the V phase of the stator winding 121a.
　第２の半導体モジュール４０において、第１の上下アームがＷ相上下アームを構成し、第２の上下アームがＸ相上下アームを構成している。スイッチング素子７００Ｈとスイッチング素子７００Ｌの接続点は、固定子巻線１２１ａのＷ相に接続されている。スイッチング素子７０１Ｈとスイッチング素子７０１Ｌの接続点は、固定子巻線１２１ｂのＸ相に接続されている。 In the second semiconductor module 40, the first upper and lower arms constitute a W-phase upper and lower arm, and the second upper and lower arms constitute an X-phase upper and lower arm. The connection point between the switching element 700H and the switching element 700L is connected to the W phase of the stator winding 121a. The connection point between the switching element 701H and the switching element 701L is connected to the X phase of the stator winding 121b.
　第３の半導体モジュール４０において、第１の上下アームがＹ相上下アームを構成し、第２の上下アームがＺ相上下アームを構成している。スイッチング素子７００Ｈとスイッチング素子７００Ｌの接続点は、固定子巻線１２１ｂのＹ相に接続されている。スイッチング素子７０１Ｈとスイッチング素子７０１Ｌの接続点は、固定子巻線１２１ｂのＺ相に接続されている。 In the third semiconductor module 40, the first upper and lower arms constitute Y phase upper and lower arms, and the second upper and lower arms constitute Z phase upper and lower arms. The connection point between the switching element 700H and the switching element 700L is connected to the Y phase of the stator winding 121b. The connection point between the switching element 701H and the switching element 701L is connected to the Z phase of the stator winding 121b.
　半導体モジュール４０は、図４及び図５に示すように、外部接続用端子として、主端子６３を有している。また、主端子６３として、正極端子６３Ｂ１，６３Ｂ２と、負極端子６３Ｅ１，６３Ｅ２と、出力端子６３Ｐ１，６３Ｐ２を有している。半導体モジュール４０のそれぞれは、配線基板２２の軸方向後側に配置されている。 The semiconductor module 40 has a main terminal 63 as an external connection terminal as shown in FIGS. 4 and 5. Also, as the main terminals 63, positive electrode terminals 63B1 and 63B2, negative electrode terminals 63E1 and 63E2, and output terminals 63P1 and 63P2 are provided. Each of the semiconductor modules 40 is disposed on the rear side in the axial direction of the wiring board 22.
　ヒートシンク２４は、半導体モジュール４０の生じた熱を放熱する金属部材である。ヒートシンク２４は、本体部２４０と、複数のフィン２４１を有している。本体部２４０は、略直方体状をなしており、フィン２４１は、本体部２４０における半導体モジュール４０とは反対の面から突出している。 The heat sink 24 is a metal member that radiates the heat generated by the semiconductor module 40. The heat sink 24 has a main body 240 and a plurality of fins 241. The main body portion 240 has a substantially rectangular parallelepiped shape, and the fins 241 project from the surface of the main body portion 240 opposite to the semiconductor module 40.
　ヒートシンク２４は、ケース２１の本体部２１０にインサート成形されている。本体部２１０に一体化された状態で、本体部２４０の一面が本体部２１０内に露出し、フィン２４１が反対側の面から突出している。そして、本体部２４０の一面に、半導体モジュール４０が接触している。ヒートシンク２４は、半導体モジュール４０と熱的に接続されている。ヒートシンク２４と半導体モジュール４０との間には、たとえば熱伝導性接着材が介在している。 The heat sink 24 is insert-molded on the main body portion 210 of the case 21. In the state of being integrated with the main body portion 210, one surface of the main body portion 240 is exposed in the main body portion 210, and the fin 241 protrudes from the opposite surface. The semiconductor module 40 is in contact with one surface of the main body 240. The heat sink 24 is thermally connected to the semiconductor module 40. For example, a thermally conductive adhesive is interposed between the heat sink 24 and the semiconductor module 40.
　界磁回路部２５は、回転子巻線１３１に直流を供給する回路である。界磁回路部２５は、スイッチング素子を有している。たとえばスイッチング素子によりＨブリッジ回路が構成されている。スイッチング素子は、配線基板２２に実装されている。 The field circuit unit 25 is a circuit that supplies DC to the rotor winding 131. The field circuit unit 25 has a switching element. For example, an H bridge circuit is configured by switching elements. The switching element is mounted on the wiring board 22.
　制御回路部２６は、インバータ回路部２３及び界磁回路部２５を制御する回路である。制御回路部２６は、たとえばマイクロコンピュータ（マイコン）を有している。制御回路部２６は、たとえば、スイッチング素子７０それぞれの駆動信号を生成する駆動回路を有している。駆動回路は、たとえばスイッチング素子７０を１２０度通電方式でＰＷＭ制御する。駆動回路は、生成した駆動信号を後述する駆動部８０に出力する。 The control circuit unit 26 is a circuit that controls the inverter circuit unit 23 and the field circuit unit 25. Control circuit unit 26 includes, for example, a microcomputer (microcomputer). The control circuit unit 26 includes, for example, a drive circuit that generates a drive signal of each of the switching elements 70. The drive circuit performs, for example, PWM control of the switching element 70 by a 120-degree conduction method. The drive circuit outputs the generated drive signal to a drive unit 80 described later.
　制御回路部２６は、シャント抵抗器９０１により検出された各相に流れる電流に比例する電圧値に基づいて、各相に流れる電流を検出する電流検出回路を有している。電流検出回路は、駆動部８０を介することなく、信号端子６４を介して各相の電流を検出する。制御回路部２６は、駆動部８０から送信される通知信号に基づいて、スイッチング素子７０の異常を検出する異常検出回路を有している。制御回路部２６は、スイッチング素子７０と一体に形成された感温ダイオードの順方向電圧Ｖｆを取得して、スイッチング素子７０の温度を検出する温度検出回路を有している。温度検出回路は、駆動部８０を介して、順方向電圧Ｖｆを取得する。 The control circuit unit 26 has a current detection circuit that detects the current flowing in each phase based on the voltage value proportional to the current flowing in each phase detected by the shunt resistor 901. The current detection circuit detects the current of each phase via the signal terminal 64 without passing through the drive unit 80. The control circuit unit 26 includes an abnormality detection circuit that detects an abnormality of the switching element 70 based on a notification signal transmitted from the drive unit 80. The control circuit unit 26 has a temperature detection circuit that acquires the forward voltage Vf of the temperature sensing diode integrally formed with the switching element 70 and detects the temperature of the switching element 70. The temperature detection circuit obtains the forward voltage Vf via the drive unit 80.
　バスバー２７は、インバータ回路部２３に接続される配線部材である。バスバー２７は、インバータ回路部２３との接続部２７０を露出させた状態で、ケース２１の本体部２１０にインサート成形されている。バスバー２７は、軸方向前側に延びた状態で、本体部２１０にインサート成形されている。接続部２７０は、半導体モジュール４０の対応する主端子６３に隣接した状態で、主端子６３と同じ方向に延びている。そして、隣接する接続部２７０と主端子６３とが接合されている。具体的には、アーク溶接により、主端子６３とバスバー２７が接合されている。 The bus bar 27 is a wiring member connected to the inverter circuit unit 23. The bus bar 27 is insert-molded in the main body portion 210 of the case 21 in a state where the connection portion 270 with the inverter circuit portion 23 is exposed. The bus bar 27 is insert-molded in the main body portion 210 in a state of extending axially forward. The connection portion 270 extends in the same direction as the main terminal 63 in a state adjacent to the corresponding main terminal 63 of the semiconductor module 40. And the adjacent connection part 270 and the main terminal 63 are joined. Specifically, the main terminal 63 and the bus bar 27 are joined by arc welding.
　図４及び図５に示すように、バスバー２７は、正極バスバー２７Ｂと、負極バスバー２７Ｅと、出力バスバー２７Ｐ１，２７Ｐ２を有している。図４に示すように、半導体モジュール４０に対して回転軸１３３側、すなわち径方向内側に正極バスバー２７Ｂ及び負極バスバー２７Ｅが配置され、回転軸１３３とは反対側、すなわち径方向外側に出力バスバー２７Ｐ１，２７Ｐ２が配置されている。図４では、正極バスバー２７Ｂ及び負極バスバー２７Ｅと、正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２との接続を分かりやすくするために、便宜上、負極バスバー２７Ｅの内側に正極バスバー２７Ｂを示している。 As shown in FIGS. 4 and 5, the bus bar 27 includes a positive electrode bus bar 27B, a negative electrode bus bar 27E, and output bus bars 27P1 and 27P2. As shown in FIG. 4, the positive electrode bus bar 27B and the negative electrode bus bar 27E are disposed on the rotary shaft 133 side, ie, the radial inner side with respect to the semiconductor module 40, and the output bus bar 27P1 on the opposite side to the rotary shaft 133, ie, the radial outer side. , 27P2 are arranged. In FIG. 4, the positive electrode bus bar 27B is shown inside the negative electrode bus bar 27E for the sake of simplicity in order to clearly show the connection between the positive electrode bus bar 27B and the negative electrode bus bar 27E and the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2.
　正極バスバー２７Ｂは、配線基板２２の電源接続部及び半導体モジュール４０の正極端子６３Ｂ１，６３Ｂ２を、バッテリの正極端子に接続させるバスバー２７である。負極バスバー２７Ｅは、配線基板２２の電源接続部及び半導体モジュール４０の負極端子６３Ｅ１，６３Ｅ２を、バッテリの負極端子に直接又は車体を介して接続させるバスバー２７である。出力バスバー２７Ｐ１は、半導体モジュール４０の出力端子６３Ｐ１を、固定子巻線１２１に接続させるバスバー２７である。出力バスバー２７Ｐ２は、出力端子６３Ｐ２を、固定子巻線１２１に接続させるバスバー２７である。 The positive electrode bus bar 27B is a bus bar 27 that connects the power supply connection portion of the wiring board 22 and the positive electrode terminals 63B1 and 63B2 of the semiconductor module 40 to the positive electrode terminal of the battery. The negative bus bar 27E is a bus bar 27 that connects the power supply connection portion of the wiring board 22 and the negative terminals 63E1 and 63E2 of the semiconductor module 40 directly to the negative terminal of the battery or via the vehicle body. The output bus bar 27P1 is a bus bar 27 that connects the output terminal 63P1 of the semiconductor module 40 to the stator winding 121. The output bus bar 27P2 is a bus bar 27 that connects the output terminal 63P2 to the stator winding 121.
　正極バスバー２７Ｂ及び負極バスバー２７Ｅは、たとえば銅板を打ち抜き、曲げ加工して形成されている。正極バスバー２７Ｂ及び負極バスバー２７Ｅは、ケース２１によって互いに絶縁されている。 The positive electrode bus bar 27B and the negative electrode bus bar 27E are formed, for example, by punching and bending a copper plate. The positive bus bar 27 </ b> B and the negative bus bar 27 </ b> E are mutually insulated by the case 21.
　正極バスバー２７Ｂは、配線基板２２に接続される接続部及び各半導体モジュール４０の正極端子６３Ｂ１，６３Ｂ２との接続部２７０を、ケース２１の内部に露出させるとともに、バッテリ側の接続部２７１をケース２１の外部に露出させた状態で、ケース２１にインサート成形されている。負極バスバー２７Ｅは、配線基板２２に接続される接続部及び各半導体モジュール４０の負極端子６３Ｅ１，６３Ｅ２との接続部２７０を、ケース２１の内部に露出させるとともに、バッテリ側の接続部２７２をケース２１の外部に露出させた状態で、ケース２１にインサート成形されている。 The positive electrode bus bar 27B exposes the connection portion connected to the wiring board 22 and the connection portion 270 with the positive electrode terminals 63B1 and 63B2 of each semiconductor module 40 to the inside of the case 21 and the connection portion 271 on the battery side It is insert-molded in the case 21 in the state which exposed to the exterior of. The negative bus bar 27E exposes the connecting portion connected to the wiring board 22 and the connecting portion 270 with the negative terminals 63E1 and 63E2 of each semiconductor module 40 to the inside of the case 21, and the connecting portion 272 on the battery side It is insert-molded in the case 21 in the state which exposed to the exterior of.
　正極バスバー２７Ｂのバッテリ側の接続部２７１及び負極バスバー２７Ｅのバッテリ側の接続部２７２は、配線基板２２の切り欠き側に配置されている。正極バスバー２７Ｂの接続部２７１は２つ設けられている。２つの接続部２７１は、互いに接続されている。負極バスバー２７Ｅの接続部２７２は１つ設けられている。接続部２７２は、２つの接続部２７１から等距離だけ径方向外側に離れて設けられている。 The connection portion 271 on the battery side of the positive electrode bus bar 27B and the connection portion 272 on the battery side of the negative electrode bus bar 27E are disposed on the cutout side of the wiring board 22. Two connection portions 271 of the positive electrode bus bar 27B are provided. The two connection parts 271 are connected to each other. One connection portion 272 of the negative electrode bus bar 27E is provided. The connection portion 272 is provided radially outward at an equal distance from the two connection portions 271.
　正極バスバー２７Ｂは、２つの接続部２７１のそれぞれから延びている。正極バスバー２７Ｂは、回転軸１３３に直交する面に平行に延びている。正極バスバー２７Ｂは、２つの接続部２７１の中点と回転軸１３３の中心とを通る仮想線に対して、線対称配置とされている。図４において、正極バスバー２７Ｂの１つは、回転軸１３３周りを時計方向に延びており、別の正極バスバー２７Ｂは、回転軸１３３周りを反時計方向に延びている。 The positive electrode bus bar 27 B extends from each of the two connection portions 271. The positive electrode bus bar 27 B extends in parallel to a plane orthogonal to the rotation axis 133. The positive electrode bus bars 27B are arranged in line symmetry with respect to an imaginary line passing through the midpoints of the two connection portions 271 and the center of the rotation shaft 133. In FIG. 4, one of the positive electrode bus bars 27B extends in the clockwise direction around the rotation axis 133, and the other positive electrode bus bar 27B extends in the counterclockwise direction around the rotation axis 133.
　正極バスバー２７Ｂは、２つの接続部２７１の中点とは回転軸１３３を挟んで反対側に開口部を有している。一対の正極バスバー２７Ｂは、２つの接続部２７１の中点とは回転軸１３３を挟んで反対側の位置において、互いに接続することなく、開口部を介して離間している。 The positive electrode bus bar 27B has an opening on the opposite side to the middle point of the two connection portions 271 with the rotary shaft 133 interposed therebetween. The pair of positive electrode bus bars 27B are separated from each other through the opening without being connected to each other at positions opposite to each other with respect to the middle point of the two connection portions 271 with respect to the rotation shaft 133.
　負極バスバー２７Ｅも、回転軸１３３に直交する面に平行に延びている。負極バスバー２７Ｅは、バッテリ側の接続部２７２から回転軸１３３に向けて延びた先で２つに分岐し、一方が回転軸１３３周りを時計方向に延び、他方が回転軸１３３周りを反時計方向に延びている。負極バスバー２７Ｅは、接続部２７２と回転軸１３３の中心とを通る仮想線に対して、線対称配置とされている。 The negative bus bar 27 </ b> E also extends parallel to the plane orthogonal to the rotation axis 133. The negative bus bar 27E is branched into two at the end extending from the connection portion 272 on the battery side toward the rotation shaft 133, one extending clockwise around the rotation shaft 133, and the other counterclockwise around the rotation shaft 133 It extends to The negative bus bar 27 </ b> E is arranged in line symmetry with respect to an imaginary line passing through the connection portion 272 and the center of the rotating shaft 133.
　負極バスバー２７Ｅは、接続部２７２とは回転軸１３３を挟んで反対側に開口部を有している。分岐した負極バスバー２７Ｅは、接続部２７２とは回転軸１３３を挟んで反対側の位置において、互いに接続することなく、開口部を介して離間している。 The negative electrode bus bar 27 </ b> E has an opening on the opposite side to the connecting portion 272 with the rotating shaft 133 interposed therebetween. The branched negative electrode bus bar 27E is separated from the connecting portion 272 via the opening without being connected to each other at the opposite side of the rotary shaft 133.
　正極バスバー２７Ｂ及び負極バスバー２７Ｅとは、互いに沿うように配置されている。正極バスバー２７Ｂ及び負極バスバー２７Ｅとは、互いに沿って延在する部分の略全域にわたって、径方向に所定間隔が維持された状態で離間している。この所定間隔離間した正極バスバー２７Ｂ及び負極バスバー２７Ｅとにおいて、互いに逆向きに電流が流れる。したがって、インダクタンスを低減することができる。 The positive electrode bus bar 27B and the negative electrode bus bar 27E are arranged along each other. The positive electrode bus bar 27B and the negative electrode bus bar 27E are separated in a state in which a predetermined distance is maintained in the radial direction over substantially the entire area of the portions extending along each other. In the positive electrode bus bar 27B and the negative electrode bus bar 27E separated by a predetermined distance, currents flow in opposite directions to each other. Therefore, the inductance can be reduced.
　なお、図４及び図５に示すように、反時計回りに延設された正極バスバー２７Ｂには、Ｕ相及びＶ相の上下アームを構成する半導体モジュール４０の正極端子６３Ｂ１，６３Ｂ２と、Ｗ相及びＸ相の上下アームを構成する半導体モジュール４０のうち、Ｗ相の上下アームに対応する正極端子６３Ｂ１が接続されている。反時計回りに延設された負極バスバー２７Ｅには、Ｕ相及びＶ相の上下アームを構成する半導体モジュール４０の負極端子６３Ｅ１，６３Ｅ２と、Ｗ相及びＸ相の上下アームを構成する半導体モジュール４０のうち、Ｗ相の上下アームに対応する負極端子６３Ｅ１が接続されている。 As shown in FIGS. 4 and 5, the positive electrode bus bar 27B extended in the counterclockwise direction includes positive electrode terminals 63B1 and 63B2 of the semiconductor module 40 constituting upper and lower arms of U phase and V phase, and W phase The positive electrode terminal 63B1 corresponding to the upper and lower arms of the W phase among the semiconductor modules 40 constituting the upper and lower arms of the X phase is connected. In the negative electrode bus bar 27E extended counterclockwise, the negative terminals 63E1 and 63E2 of the semiconductor module 40 constituting the U-phase and V-phase upper and lower arms and the semiconductor module 40 constituting the W-phase and X-phase upper and lower arms Among them, the negative electrode terminal 63E1 corresponding to the W-phase upper and lower arms is connected.
　一方、時計回りに延設された正極バスバー２７Ｂには、Ｗ相及びＸ相の上下アームを構成する半導体モジュール４０のうち、Ｘ相の上下アームに対応する正極端子６３Ｂ２と、Ｙ相及びＺ相の上下アームを構成する半導体モジュール４０の正極端子６３Ｂ１，６３Ｂ２が接続されている。時計回りに延設された負極バスバー２７Ｅには、Ｗ相及びＸ相の上下アームを構成する半導体モジュール４０のうち、Ｘ相の上下アームに対応する負極端子６３Ｅ２と、Ｙ相及びＺ相の上下アームを構成する半導体モジュール４０の負極端子６３Ｅ１，６３Ｅ２が接続されている。 On the other hand, in positive electrode bus bar 27B extended clockwise, positive electrode terminal 63B2 corresponding to upper and lower arms of X phase among semiconductor modules 40 constituting upper and lower arms of W phase and X phase, Y phase and Z phase The positive terminals 63B1 and 63B2 of the semiconductor module 40 constituting the upper and lower arms are connected. In the negative electrode bus bar 27E extended clockwise, the negative electrode terminal 63E2 corresponding to the upper and lower arms of the X phase among the semiconductor modules 40 constituting the upper and lower arms of the W phase and the X phase, and the upper and lower sides of the Y phase and the Z phase. The negative terminals 63E1 and 63E2 of the semiconductor module 40 constituting the arm are connected.
　このように、３つの半導体モジュール４０は、Ｕ相及びＶ相の上下アームを構成する半導体モジュール４０、Ｗ相及びＸ相の上下アームを構成する半導体モジュール４０、Ｙ相及びＺ相の上下アームを構成する半導体モジュール４０の順に、回転軸１３３周りに配置されている。 As described above, the three semiconductor modules 40 include the semiconductor module 40 configuring the U-phase and V-phase upper and lower arms, the semiconductor module 40 configuring the W-phase and X-phase upper and lower arms, and the Y-phase and Z-phase upper and lower arms The semiconductor modules 40 to be configured are arranged around the rotation axis 133 in the order.
　（回転電機の動作）
　まず、車両を駆動するための駆動力を発生する際の動作について説明する。 (Operation of the rotating electrical machine)
First, an operation at the time of generating a driving force for driving a vehicle will be described.
　車両のイグニッションスイッチがオン状態になると、正極バスバー２７Ｂ及び負極バスバー２７Ｅ等を介してインバータ回路部２３に直流が供給される。また、その他の配線用のバスバー及び配線基板２２を介して、界磁回路部２５及び制御回路部２６に直流が供給される。 When the ignition switch of the vehicle is turned on, direct current is supplied to the inverter circuit unit 23 through the positive electrode bus bar 27B, the negative electrode bus bar 27E, and the like. Further, direct current is supplied to the field circuit unit 25 and the control circuit unit 26 through the other bus bars for wiring and the wiring board 22.
　直流が供給されることで、界磁回路部２５及び制御回路部２６が動作を開始する。制御回路部２６は、外部、たとえばエンジンＥＣＵなどから入力される信号に基づいて、インバータ回路部２３及び界磁回路部２５を制御する。界磁回路部２５は、制御回路部２６によって制御され、ブラシ１６及びスリップリング１５を介して回転子巻線１３１に直流を供給する。 The supply of direct current causes the field circuit unit 25 and the control circuit unit 26 to start operation. Control circuit unit 26 controls inverter circuit unit 23 and field circuit unit 25 based on a signal input from the outside, for example, an engine ECU. The field circuit unit 25 is controlled by the control circuit unit 26 and supplies direct current to the rotor winding 131 via the brush 16 and the slip ring 15.
　インバータ回路部２３は、制御回路部２６によって制御され、正極バスバー２７Ｂ及び負極バスバー２７Ｅなどを介して供給された直流を交流に変換する。制御回路部２６により、スイッチング素子７０のオンオフが制御され、電流の流れる方向が順次切り替えられて、直流が交流に変換される。インバータ回路部２３により変換された交流は、出力バスバー２７Ｐ１，２７Ｐ２などを介して固定子巻線１２１に供給される。これにより、回転電機部１０は、車両を駆動するため駆動力を発生する。 The inverter circuit unit 23 is controlled by the control circuit unit 26, and converts direct current supplied via the positive electrode bus bar 27B and the negative electrode bus bar 27E into alternating current. The control circuit unit 26 controls the on / off of the switching element 70 to sequentially switch the flowing direction of the current, thereby converting direct current into alternating current. The alternating current converted by the inverter circuit unit 23 is supplied to the stator winding 121 via the output bus bars 27P1 and 27P2. Thus, the rotating electrical machine unit 10 generates a driving force to drive the vehicle.
　このとき、回転角度検出素子により、回転子１３の回転状態が検出される。また、半導体モジュール４０が備えるシャント抵抗器９０１により、固定子巻線１２１の各相を流れる電流が検出される。制御回路部２６は、これら検出値を利用して、回転電機１の回転を制御する。 At this time, the rotational state of the rotor 13 is detected by the rotational angle detection element. Further, the shunt resistor 901 provided in the semiconductor module 40 detects the current flowing in each phase of the stator winding 121. The control circuit unit 26 controls the rotation of the rotary electric machine 1 using these detected values.
　次に、バッテリを充電するための電力を発生する際の動作について説明する。 Next, the operation at the time of generating the power for charging the battery will be described.
　スリップリング１５及びブラシ１６を介して回転子巻線１３１に直流が供給されて磁極が形成された状態で、エンジンから駆動力が供給されると、固定子巻線１２１ａ，１２１ｂがそれぞれ交流（三相交流）を発生する。インバータ回路部２３は、制御回路部２６によって制御され、固定子巻線１２１から出力バスバー２７Ｐ１，２７Ｐ２などを介して供給される交流を直流に変換する。制御回路部２６により、スイッチング素子７０のオンオフが制御され、電流の流れる方向が順次切り替えられて、交流が整流される。スイッチング素子７０のデッドタイムにおいては、寄生ダイオードにより、交流が整流される。インバータ回路部２３により変換された直流は、バッテリに供給される。これにより、バッテリは、回転電機部１０の発生した電力によって充電される。 In the state where a direct current is supplied to the rotor winding 131 via the slip ring 15 and the brush 16 to form a magnetic pole, when the driving force is supplied from the engine, the stator windings 121a and 121b are alternating current (3 Phase exchange). The inverter circuit unit 23 is controlled by the control circuit unit 26, and converts alternating current supplied from the stator winding 121 via the output bus bars 27P1 and 27P2 into direct current. The control circuit unit 26 controls the on / off of the switching element 70 to sequentially switch the flowing direction of the current to rectify the alternating current. During the dead time of the switching element 70, alternating current is rectified by the parasitic diode. The direct current converted by the inverter circuit unit 23 is supplied to the battery. Thereby, the battery is charged by the power generated by the rotating electrical machine unit 10.
　（半導体モジュール詳細）
　半導体モジュール４０の説明において、スイッチング素子７０の厚み方向をＺ方向、Ｚ方向に直交し、複数の信号端子６４の並び方向をＸ方向と示す。また、Ｚ方向及びＸ方向の両方向に直交する方向をＹ方向と示す。特に断わりのない限り、ＸＹ面視したときの形状（ＸＹ平面に沿う形状）を平面形状とする。ＸＹ面視は、Ｚ方向の投影視とも言える。Ｚ方向は、軸方向に略一致している。また、リードフレーム６０におけるＸ方向の中心に近い位置を内側、遠い位置を外側と示す。また、Ｚ方向において、封止樹脂体５０の裏面５０ｂから一面５０ａに向かう方向を上方、一面５０ａから裏面５０ｂに向かう方向を下方と示す。 (Details of semiconductor module)
In the description of the semiconductor module 40, the thickness direction of the switching element 70 is orthogonal to the Z direction and the Z direction, and the arrangement direction of the plurality of signal terminals 64 is referred to as the X direction. Further, a direction orthogonal to both the Z direction and the X direction is referred to as a Y direction. Unless otherwise specified, the shape when viewed in the XY plane (shape along the XY plane) is a plane shape. XY plane view can be said to be projection view in the Z direction. The Z direction substantially coincides with the axial direction. Further, a position near the center of the lead frame 60 in the X direction is indicated as inside, and a position far from the center is indicated as outside. Further, in the Z direction, the direction from the back surface 50b to the one surface 50a of the sealing resin body 50 is referred to as upper, and the direction from the one surface 50a to the back 50b is as lower.
　図６～図２１に示すように、半導体モジュール４０は、封止樹脂体５０と、リードフレーム６０と、スイッチング素子７０と、駆動部８０と、架橋部材９０を備えている。なお、図１４～図２０では、封止樹脂体５０を省略している。図２１では、スイッチング素子７０、駆動部８０、及び架橋部材９０が実装されており、封止樹脂体５０を成形する前の状態、すなわちタイバーカット前のリードフレーム６０を示している。図１４～図２０では、便宜上、ボンディングワイヤ４１を省略している。半導体モジュール４０は、半導体パッケージ、スイッチングモジュール、半導体装置とも称される。 As shown in FIGS. 6 to 21, the semiconductor module 40 includes a sealing resin body 50, a lead frame 60, a switching element 70, a drive unit 80, and a bridge member 90. In FIGS. 14 to 20, the sealing resin body 50 is omitted. In FIG. 21, the switching element 70, the drive unit 80, and the cross-linking member 90 are mounted, and the lead frame 60 before the molding of the sealing resin body 50, that is, before the tie bar cut is shown. In FIGS. 14 to 20, the bonding wires 41 are omitted for the sake of convenience. The semiconductor module 40 is also referred to as a semiconductor package, a switching module, or a semiconductor device.
　（封止樹脂体）
　封止樹脂体５０は、リードフレーム６０の一部、スイッチング素子７０、駆動部８０、及び架橋部材９０を一体的に封止している。封止樹脂体５０は、たとえばエポキシ系の樹脂を用いて形成されている。 (Sealing resin body)
The sealing resin body 50 integrally seals a part of the lead frame 60, the switching element 70, the driving unit 80, and the bridging member 90. Sealing resin body 50 is formed using, for example, an epoxy resin.
　図６～図１３に示すように、封止樹脂体５０は、Ｚ方向の面である一面５０ａと、一面５０ａと反対の裏面５０ｂと、一面５０ａ及び裏面５０ｂを繋ぐ側面を有している。半導体モジュール４０は、封止樹脂体５０の裏面５０ｂ側がヒートシンク２４に接触するように配置される。本実施形態では、封止樹脂体５０が略直方体とされており、４つの側面を有している。Ｙ方向の第１側面である側面５０ｃと、側面５０ｃと反対の第２側面である側面５０ｄから、主端子６３及び信号端子６４が突出している。 As shown in FIGS. 6 to 13, the sealing resin body 50 has a surface 50a which is a surface in the Z direction, a back surface 50b opposite to the surface 50a, and a side surface connecting the surface 50a and the back surface 50b. The semiconductor module 40 is disposed such that the back surface 50 b side of the sealing resin body 50 is in contact with the heat sink 24. In the present embodiment, the sealing resin body 50 is a substantially rectangular parallelepiped, and has four side surfaces. A main terminal 63 and a signal terminal 64 protrude from a side surface 50c which is a first side surface in the Y direction and a side surface 50d which is a second side surface opposite to the side surface 50c.
　本実施形態では、トランスファモールド法によって、封止樹脂体５０が成形されている。図６及び図７などに示すように、封止樹脂体５０は、凹部５１を有している。凹部５１は、一面５０ａ及び側面５０ｃに開口している。凹部５１の底面は、略平坦とされている。凹部５１は、正極端子６３Ｂ１，６３Ｂ２に対応して２つ設けられている。凹部５１は、Ｚ方向からの投影視において、対応する正極端子６３Ｂ１，６３Ｂ２と重なる位置に設けられている。凹部５１は、正極端子６３Ｂ１，６３Ｂ２と正極バスバー２７Ｂを溶接する際に、治具の一部が挿入可能に設けられている。 In the present embodiment, the sealing resin body 50 is formed by transfer molding. As shown in FIGS. 6 and 7 etc., the sealing resin body 50 has a recess 51. The recess 51 is open to the one surface 50 a and the side surface 50 c. The bottom surface of the recess 51 is substantially flat. The two concave portions 51 are provided corresponding to the positive electrode terminals 63B1 and 63B2. The concave portion 51 is provided at a position overlapping the corresponding positive electrode terminals 63B1 and 63B2 in the projection view from the Z direction. When welding the positive electrode terminals 63B1 and 63B2 and the positive electrode bus bar 27B, the recess 51 is provided such that a part of the jig can be inserted.
　図７及び図８に示すように、封止樹脂体５０は、図示しない成形型に設けられたエアベント由来の凸部５２を有している。凸部５２は、側面５０ｃ，５０ｄから突出している。エアベントは、成形時のエア巻き込みによるボイドやウエルドラインを低減するために、成形型を構成する上型及び下型それぞれに設けられている。エアベントは、上型及び下型の側面５０ｃ，５０ｄを形成する部分において、Ｚ方向からの投影視で主端子６３のそれぞれと重なる位置に設けられている。このため、Ｚ方向において、凸部５２の間に主端子６３が配置されている。 As shown in FIG. 7 and FIG. 8, the sealing resin body 50 has a convex portion 52 derived from an air vent provided in a molding die not shown. The convex portion 52 protrudes from the side surfaces 50c and 50d. The air vents are provided on the upper and lower molds constituting the mold in order to reduce voids and weld lines caused by air entrainment at the time of molding. The air vents are provided at positions overlapping with the main terminals 63 in the projection view from the Z direction at the portions forming the side surfaces 50 c and 50 d of the upper and lower dies. Therefore, the main terminal 63 is disposed between the protrusions 52 in the Z direction.
　なお、図６～図８に示す符号５３は、エジェクタピン由来のピン痕である。図６及び図７に示す符号５４は、成形型のゲート痕である。 Reference numeral 53 shown in FIGS. 6 to 8 denotes pin marks derived from ejector pins. Reference numeral 54 shown in FIGS. 6 and 7 denotes a gate mark of a mold.
　（リードフレーム）
　リードフレーム６０は、金属製の板材である。リードフレーム６０は、金属板を打ち抜き、曲げ加工して形成されている。リードフレーム６０は、アイランド６１と、配線部６２と、外部接続用端子である主端子６３及び信号端子６４と、ダミー端子６５を備えている。リードフレーム６０は、Ｘ方向の中心に対してほぼ線対称とされている。図２１では、リードフレーム６０のＸ方向の中心を一点鎖線で示している。 (Lead frame)
The lead frame 60 is a plate made of metal. The lead frame 60 is formed by punching and bending a metal plate. The lead frame 60 includes an island 61, a wiring portion 62, a main terminal 63 and a signal terminal 64 which are terminals for external connection, and a dummy terminal 65. The lead frame 60 is substantially line symmetrical with respect to the center in the X direction. In FIG. 21, the center of the lead frame 60 in the X direction is indicated by an alternate long and short dash line.
　図１４～図１６及び図２１に示すように、アイランド６１には、スイッチング素子７０及び駆動部８０が配置されている。リードフレーム６０は、スイッチング素子７０及び駆動部８０が個別に配置される５つのアイランド６１０～６１４を有している。アイランド６１０～６１４は、互いに略同じ厚みとされ、Ｚ方向において同一面内に配置されている。アイランド６１０～６１４は、Ｘ方向の中心に対して線対称配置とされている。 As shown in FIGS. 14 to 16 and 21, the switching element 70 and the drive unit 80 are disposed on the island 61. The lead frame 60 has five islands 610 to 614 in which the switching element 70 and the driving unit 80 are individually disposed. The islands 610 to 614 have substantially the same thickness and are arranged in the same plane in the Z direction. The islands 610 to 614 are arranged in line symmetry with respect to the center in the X direction.
　アイランド６１０は、駆動部８０が配置される部分である。アイランド６１１～６１４は、スイッチング素子７０が配置され、配置されたスイッチング素子７０のドレイン電極が接続される部分である。アイランド６１１にはスイッチング素子７００Ｈが配置され、アイランド６１２にはスイッチング素子７００Ｌが配置される。アイランド６１３にはスイッチング素子７０１Ｈが配置され、アイランド６１４にはスイッチング素子７０１Ｌが配置される。アイランド６１１～６１４のＸＹ面に沿う面積は、互いに略等しくされている。 The island 610 is a portion where the drive unit 80 is disposed. The islands 611 to 614 are portions where the switching element 70 is disposed and to which the drain electrode of the disposed switching element 70 is connected. The switching element 700 H is disposed on the island 611, and the switching element 700 L is disposed on the island 612. The switching element 701 H is disposed on the island 613, and the switching element 701 L is disposed on the island 614. The areas of the islands 611 to 614 along the XY plane are substantially equal to one another.
　図８に示すように、アイランド６１０において、駆動部８０の配置面と反対の放熱面６１０ａは、封止樹脂体５０の裏面５０ｂから露出されている。同じく、アイランド６１１～６１４において、スイッチング素子７０の配置面と反対の放熱面６１１ａ～６１４ａは、裏面５０ｂから露出されている。これにより、放熱面６１０ａ～６１４ａから効率よく放熱することができる。アイランド６１のうち、放熱面６１０ａ～６１４ａを除く部分は、封止樹脂体５０によって封止されている。図１２などに示すように、アイランド６１それぞれの側面には、封止樹脂体５０の剥離を抑制するために、凸部が設けられている。 As shown in FIG. 8, in the island 610, the heat release surface 610 a opposite to the arrangement surface of the drive unit 80 is exposed from the back surface 50 b of the sealing resin body 50. Similarly, in the islands 611 to 614, the heat radiation surfaces 611a to 614a opposite to the arrangement surface of the switching element 70 are exposed from the back surface 50b. Thus, the heat can be dissipated efficiently from the heat dissipation surfaces 610a to 614a. The portion of the island 61 excluding the heat radiation surfaces 610a to 614a is sealed by a sealing resin body 50. As shown in FIG. 12 etc., in order to suppress peeling of the sealing resin body 50, the convex part is provided in the side of each island 61. As shown in FIG.
　アイランド６１０は、平面略矩形状をなしている。アイランド６１０は、Ｘ方向においてリードフレーム６０の中心に配置されている。アイランド６１０は、図１６及び図２１などに示すように、信号端子６４とは反対側の端部中央からＹ方向に突出する凸部６１０ｂを有している。 The island 610 has a substantially rectangular planar shape. The island 610 is disposed at the center of the lead frame 60 in the X direction. The island 610, as shown in FIG. 16 and FIG. 21, etc., has a convex portion 610b that protrudes in the Y direction from the center of the end opposite to the signal terminal 64.
　図２１に示すように、スイッチング素子７００Ｈ，７０１Ｈのパッド７１及びアイランド６１１，６１３と、駆動部８０とを、ボンディングワイヤ４１により接続する際に、図示しないクランプ治具にて凸部６１０ｂを押さえることができる。これにより、アイランド６１０が安定し、ボンディング性を向上することができる。凸部６１０ｂは、ボンディングワイヤ４１の邪魔にならない位置に設ければよい。たとえば、スイッチング素子７００Ｈ，７０１Ｈのパッド７１間の距離が本実施形態よりも短い場合には、中央ではなく両端に凸部６１０ｂを設けてもよい。 As shown in FIG. 21, when connecting the pads 71 and the islands 611 and 613 of the switching elements 700H and 701H and the drive unit 80 with the bonding wire 41, pressing the convex portion 610b with a clamp jig (not shown) Can. As a result, the island 610 can be stabilized, and the bondability can be improved. The convex portion 610 b may be provided at a position not interfering with the bonding wire 41. For example, when the distance between the pads 71 of the switching elements 700H and 701H is shorter than that of the present embodiment, the convex portions 610b may be provided at both ends instead of the center.
　アイランド６１１～６１４は、アイランド６１０の周りに配置されている。下アーム側のスイッチング素子７００Ｌ，７０１Ｌが配置されたアイランド６１２，６１４は、Ｘ方向において、間にアイランド６１０を挟むように設けられている。アイランド６１２，６１４は、Ｘ方向において互いに線対称配置とされている。アイランド６１２，６１４は、ともに平面略矩形状をなしている。アイランド６１２，６１４は、Ｘ方向において、アイランド６１０との間にそれぞれ所定の間隙を有している。 The islands 611 to 614 are disposed around the island 610. The islands 612 and 614 in which the lower arm side switching elements 700L and 701L are disposed are provided so as to sandwich the island 610 in the X direction. The islands 612 and 614 are arranged in line symmetry with each other in the X direction. The islands 612 and 614 both have a substantially rectangular planar shape. The islands 612 and 614 each have a predetermined gap with the island 610 in the X direction.
　上アーム側のスイッチング素子７００Ｈ，７０１Ｈが配置されたアイランド６１１，６１３は、アイランド６１０に対し、Ｙ方向において信号端子６４とは反対側に設けられている。アイランド６１１，６１３は、所定の間隙を有しつつＸ方向に並んで配置されている。アイランド６１１，６１３は、Ｘ方向において互いに線対称配置とされている。アイランド６１１，６１３は、ともに平面略矩形状をなしている。アイランド６１１は、Ｙ方向においてアイランド６１０，６１２と対向している。アイランド６１３は、Ｙ方向においてアイランド６１０，６１４と対向している。 The islands 611 and 613 in which the switching elements 700H and 701H on the upper arm side are disposed are provided on the side opposite to the signal terminal 64 in the Y direction with respect to the island 610. The islands 611 and 613 are arranged side by side in the X direction with a predetermined gap. The islands 611 and 613 are arranged in line symmetry with each other in the X direction. The islands 611 and 613 both have a substantially rectangular planar shape. The island 611 faces the islands 610 and 612 in the Y direction. The island 613 faces the islands 610 and 614 in the Y direction.
　アイランド６１１，６１３は、図１６及び図２１などに示すように、信号端子６４側の端部からＹ方向に突出する凸部６１１ｂ，６１３ｂをそれぞれ有している。凸部６１１ｂ，６１３ｂは、Ｙ方向においてアイランド６１０と対向するように設けられている。凸部６１１ｂは、Ｘ方向においてアイランド６１３側の端に設けられている。凸部６１１ｂにおいて、アイランド６１３から離れた位置にボンディングワイヤ４１が接続されている。このボンディングワイヤ４１は、スイッチング素子７００Ｈのドレイン電位を検出するために接続されている。 The islands 611 and 613 have convex portions 611 b and 613 b protruding in the Y direction from the end on the signal terminal 64 side, as shown in FIGS. The convex portions 611 b and 613 b are provided to face the island 610 in the Y direction. The convex portion 611 b is provided at the end on the island 613 side in the X direction. The bonding wire 41 is connected to a position away from the island 613 in the convex portion 611 b. The bonding wire 41 is connected to detect the drain potential of the switching element 700H.
　凸部６１３ｂは、Ｘ方向においてアイランド６１１側の端に設けられている。凸部６１３ｂにおいて、アイランド６１１から離れた位置にボンディングワイヤ４１が接続されている。このボンディングワイヤ４１は、スイッチング素子７０１Ｈのドレイン電位を検出するために接続されている。 The convex portion 613 b is provided at the end on the island 611 side in the X direction. The bonding wire 41 is connected to a position away from the island 611 in the convex portion 613 b. The bonding wire 41 is connected to detect the drain potential of the switching element 701H.
　配線部６２は、アイランド６１１，６１２を接続する配線部６２０と、アイランド６１２と負極端子６３Ｅ１を接続する配線部６２１と、アイランド６１３，６１４を接続する配線部６２２と、アイランド６１４と負極端子６３Ｅ２を接続する配線部６２３を有している。 The wiring portion 62 includes a wiring portion 620 connecting the islands 611 and 612, a wiring portion 621 connecting the island 612 and the negative electrode terminal 63E1, a wiring portion 622 connecting the islands 613 and 614, an island 614 and the negative electrode terminal 63E2. A wiring portion 623 to be connected is provided.
　配線部６２０は、アイランド６１２における信号端子６４とは反対の端部に連なっている。配線部６２０は、アイランド６１２においてアイランド６１０側とは反対の端に連なっている。配線部６２０はＹ方向に延設され、その先端部分がＸ方向においてアイランド６１１との間に所定の間隙を有しつつ、アイランド６１１と並んで配置されている。配線部６２０は、アイランド６１１に対してＸ方向外側に配置されている。配線部６２１は、負極端子６３Ｅ１に連なっている。配線部６２１は負極端子６３Ｅ１からＹ方向に延びて、その先端部がＸ方向においてアイランド６１２との間に所定の間隙を有しつつ、アイランド６１２と並んで配置されている。配線部６２１は、アイランド６１２に対してＸ方向外側に配置されている。 The wiring portion 620 is connected to the end of the island 612 opposite to the signal terminal 64. The wiring portion 620 is connected to the end of the island 612 opposite to the island 610 side. The wiring portion 620 is extended in the Y direction, and its tip portion is arranged in parallel with the island 611 while having a predetermined gap with the island 611 in the X direction. The wiring portion 620 is disposed outside the island 611 in the X direction. The wiring portion 621 is connected to the negative electrode terminal 63E1. The wiring portion 621 extends from the negative electrode terminal 63E1 in the Y direction, and its tip end portion is disposed side by side with the island 612 while having a predetermined gap with the island 612 in the X direction. The wiring portion 621 is disposed outside the island 612 in the X direction.
　配線部６２２は、アイランド６１４における信号端子６４とは反対の端部に連なっている。配線部６２２は、アイランド６１４においてアイランド６１０側とは反対の端に連なっている。配線部６２２はＹ方向に延設され、その先端部分がＸ方向においてアイランド６１３との間に所定の間隙を有しつつ、アイランド６１３と並んで配置されている。配線部６２２は、アイランド６１３に対してＸ方向外側に配置されている。配線部６２３は、負極端子６３Ｅ２に連なっている。配線部６２３は負極端子６３Ｅ２からＹ方向に延びて、その先端部がＸ方向においてアイランド６１４との間に所定の間隙を有しつつ、アイランド６１４と並んで配置されている。配線部６２３は、アイランド６１４に対してＸ方向外側に配置されている。 The wiring portion 622 is connected to the end of the island 614 opposite to the signal terminal 64. The wiring portion 622 is connected to the end of the island 614 opposite to the island 610 side. The wiring portion 622 is extended in the Y direction, and the tip portion thereof is disposed in parallel with the island 613 while having a predetermined gap with the island 613 in the X direction. The wiring portion 622 is disposed outside the island 613 in the X direction. The wiring portion 623 is connected to the negative electrode terminal 63E2. The wiring portion 623 extends from the negative electrode terminal 63E2 in the Y direction, and its tip end portion is disposed side by side with the island 614 while having a predetermined gap with the island 614 in the X direction. The wiring portion 623 is disposed outside the island 614 in the X direction.
　Ｙ方向におけるアイランド６１０の位置では、Ｘ方向に配線部６２１、アイランド６１２、アイランド６１０、アイランド６１４、配線部６２３の順に並んで配置されている。また、Ｙ方向におけるアイランド６１１，６１３の位置では、Ｘ方向に配線部６２１、配線部６２０、アイランド６１１、アイランド６１３、配線部６２２、配線部６２３の順に並んで配置されている。上アーム側の配線部６２０，６２１と下アーム側の配線部６２２，６２３は、Ｘ方向において線対称配置とされている。 At the position of the island 610 in the Y direction, the wiring portion 621, the island 612, the island 610, the island 614, and the wiring portion 623 are arranged in this order in the X direction. Further, at the positions of the islands 611 and 613 in the Y direction, the wiring portion 621, the wiring portion 620, the island 611, the island 613, the wiring portion 622, and the wiring portion 623 are sequentially arranged in the X direction. The wiring portions 620 and 621 on the upper arm side and the wiring portions 622 and 623 on the lower arm side are arranged in line symmetry in the X direction.
　図８に示すように、配線部６２０～６２３において、架橋部材９０の配置面とは反対の放熱面６２０ａ～６２３ａは、封止樹脂体５０の裏面５０ｂから露出されている。放熱面６２０ａ～６２３ａは、スイッチング素子７０側の面とは反対の面である。これにより、放熱面６２０ａ～６２３ａからも放熱することができる。裏面配線部６２０～６２３のうち、放熱面６２０ａ～６２３ａを除く部分は、封止樹脂体５０によって封止されている。放熱面６１０ａ～６１４ａ，６２０ａ～６２３ａは、成形型に放熱面６１０ａ～６１４ａ，６２０ａ～６２３ａを成形型に接触させることで、裏面５０ｂから露出されている。図１２などに示すように、配線部６２それぞれの側面には、封止樹脂体５０の剥離を抑制するために、凸部が設けられている。 As shown in FIG. 8, in the wiring portions 620 to 623, the heat radiation surfaces 620a to 623a opposite to the arrangement surface of the cross-linking member 90 are exposed from the back surface 50b of the sealing resin body 50. The heat radiation surfaces 620a to 623a are surfaces opposite to the surface on the switching element 70 side. Thus, heat can be dissipated from the heat dissipation surfaces 620a to 623a. Of the back surface wiring portions 620 to 623, the portions excluding the heat dissipation surfaces 620 a to 623 a are sealed by the sealing resin body 50. The heat radiation surfaces 610a to 614a and 620a to 623a are exposed from the back surface 50b by bringing the heat radiation surfaces 610a to 614a and 620a to 623a into contact with the molding die. As shown in FIG. 12 etc., in order to suppress peeling of the sealing resin body 50, the convex part is provided in the side of each wiring part 62. As shown in FIG.
　図１４及び図２０などに示すように、リードフレーム６０において、アイランド６１及び配線部６２の部分が、主端子６３、信号端子６４、及びダミー端子６５の部分よりも厚肉とされている。Ｙ方向において、リードフレーム６０の中央部分が、中央部分よりも外側の部分に対して厚肉とされている。図２１に示す破線間が、厚肉部分である。このように、異形条のリードフレーム６０を採用すると、スイッチング素子７０及び駆動部８０の熱を効率よく放熱させることができる。また、アイランド６１及び配線部６２が厚肉とされているため、封止樹脂体５０の硬化収縮にともなうリードフレーム６０の反りを抑制することができる。一方、外部接続用端子である主端子６３及び信号端子６４が薄肉とされているため、打ち抜きや曲げ加工性を向上することができる。また、信号端子６４を狭ピッチ化することもできる。 As shown in FIG. 14 and FIG. 20 etc., in the lead frame 60, the portions of the island 61 and the wiring portion 62 are thicker than the portions of the main terminal 63, the signal terminal 64 and the dummy terminal 65. In the Y direction, the central portion of the lead frame 60 is thicker than the central portion. Between the broken lines shown in FIG. 21 are thick portions. As described above, when the lead frame 60 having a different shape is adopted, the heat of the switching element 70 and the drive unit 80 can be dissipated efficiently. In addition, since the island 61 and the wiring portion 62 are thick, it is possible to suppress the warpage of the lead frame 60 due to the cure shrinkage of the sealing resin body 50. On the other hand, since the main terminal 63 and the signal terminal 64 which are terminals for external connection are made thin, punching and bending workability can be improved. In addition, the signal terminals 64 can be narrowed in pitch.
　主端子６３は、上記したように、正極端子６３Ｂ１，６３Ｂ２と、負極端子６３Ｅ１，６３Ｅ２と、出力端子６３Ｐ１，６３Ｐ２を有している。正極端子６３Ｂ１，６３Ｂ２は、バッテリの正極側に接続される電源端子である。正極端子６３Ｂ１，６３Ｂ２は、高電位側の直流端子とも称される。正極端子６３Ｂ１は、スイッチング素子７００Ｈのアイランド６１１に連なっている。正極端子６３Ｂ１は、アイランド６１１においてアイランド６１３側とは反対の端に連なっている。正極端子６３Ｂ１は、アイランド６１１における信号端子６４とは反対の端部からＹ方向に延設されて封止樹脂体５０の側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。 As described above, the main terminal 63 has the positive electrode terminals 63B1 and 63B2, the negative electrode terminals 63E1 and 63E2, and the output terminals 63P1 and 63P2. The positive electrode terminals 63B1 and 63B2 are power supply terminals connected to the positive electrode side of the battery. The positive electrode terminals 63B1 and 63B2 are also referred to as high potential side DC terminals. The positive electrode terminal 63B1 is continuous with the island 611 of the switching element 700H. The positive electrode terminal 63B1 is continued to the end of the island 611 opposite to the island 613 side. The positive electrode terminal 63B1 extends from the end of the island 611 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c of the sealing resin body 50, is bent outside the sealing resin body 50, and extends in the Z direction. It extends upward.
　正極端子６３Ｂ２は、スイッチング素子７０１Ｈのアイランド６１３に連なっている。正極端子６３Ｂ２は、アイランド６１３においてアイランド６１１側とは反対の端に連なっている。正極端子６３Ｂ２は、アイランド６１３における信号端子６４とは反対の端部からＹ方向に延設されて側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。正極端子６３Ｂ１，６３Ｂ２は、Ｘ方向において互いに線対称配置とされている。 The positive electrode terminal 63B2 is connected to the island 613 of the switching element 701H. The positive electrode terminal 63B2 is connected to the end of the island 613 opposite to the island 611 side. The positive electrode terminal 63B2 extends from the end of the island 613 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction. The positive terminals 63B1 and 63B2 are arranged in line symmetry with each other in the X direction.
　負極端子６３Ｅ１，６３Ｅ２は、バッテリの負極側に接続される電源端子である。負極端子Ｅ１，Ｅ２は、低電位側の直流端子とも称される。負極端子６３Ｅ１は、正極端子６３Ｂ１に対してＸ方向外側に配置されている。負極端子６３Ｅ１は、Ｙ方向に延設されて側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。負極端子６３Ｅ２は、正極端子６３Ｂ２に対してＸ方向外側に配置されている。負極端子６３Ｅ２は、Ｙ方向に延設されて側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。負極端子６３Ｅ１，６３Ｅ２は、Ｘ方向において互いに線対称配置とされている。 Negative electrode terminals 63E1 and 63E2 are power supply terminals connected to the negative electrode side of the battery. The negative electrode terminals E1 and E2 are also referred to as low potential side DC terminals. The negative electrode terminal 63E1 is disposed outside the positive electrode terminal 63B1 in the X direction. The negative electrode terminal 63E1 extends in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction. The negative electrode terminal 63E2 is disposed outside the positive electrode terminal 63B2 in the X direction. The negative electrode terminal 63E2 is extended in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction. The negative terminals 63E1 and 63E2 are arranged in line symmetry with each other in the X direction.
　正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２は、Ｘ方向において、負極端子６３Ｅ１、正極端子６３Ｂ１、正極端子６３Ｂ２、負極端子６３Ｅ２の順に並んで配置されている。Ｘ方向において、負極端子６３Ｅ１と正極端子６３Ｂ１との距離、及び、負極端子６３Ｅ２と正極端子６３Ｂ２との距離は、正極端子６３Ｂ１，６３Ｂ２間の距離よりも短くされている。正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２は、ＹＺ面において略Ｌ字状をなしている。 The positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are arranged in the order of the negative electrode terminal 63E1, the positive electrode terminal 63B1, the positive electrode terminal 63B2 and the negative electrode terminal 63E2 in the X direction. In the X direction, the distance between the negative electrode terminal 63E1 and the positive electrode terminal 63B1 and the distance between the negative electrode terminal 63E2 and the positive electrode terminal 63B2 are shorter than the distance between the positive electrode terminals 63B1 and 63B2. The positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are substantially L-shaped in the YZ plane.
　正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２は、図７、図９、図１４、及び図１６などに示すように、タイバー痕６６ａ，６６ｂをそれぞれ有している。タイバー痕６６ａ，６６ｂはタイバー６６の切断痕であり、Ｘ方向にわずかに突出している。タイバー痕６６ａは、Ｙ方向においてアイランド６１に近い１段目のタイバー６６０ａの切断痕であり、タイバー痕６６ｂは、タイバー６６０ａよりもアイランド６１から離れた２段目のタイバー６６０ｂの切断痕である。正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２は、それぞれの延設方向において、タイバー痕６６ａ，６６ｂの間に屈曲部を有している。 The positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 respectively have tie bar marks 66a and 66b as shown in FIG. 7, FIG. 9, FIG. 14 and FIG. The tie bar marks 66a and 66b are cut marks of the tie bar 66 and slightly protrude in the X direction. The tie bar mark 66a is a cut mark of a first tie bar 660a closer to the island 61 in the Y direction, and the tie bar mark 66b is a cut mark of a second tie bar 660b farther from the island 61 than the tie bar 660a. The positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 have bent portions between the tie bar marks 66a and 66b in the extending direction.
　出力端子６３Ｐ１，６３Ｐ２は、交流端子とも称される。出力端子６３Ｐ１は、アイランド６１２に連なっている。出力端子６３Ｐ１は、アイランド６１２においてアイランド６１０側とは反対の端に連なり、途中まで、Ｘ方向においてアイランド６１２から遠ざかるように斜めに延設されている。具体的には、Ｘ方向においてスイッチング素子７００Ｌとは重ならない位置まで、斜めに延設されている。そして、その先でＹ方向に延設されて正極端子６３Ｂ１とは反対の側面５０ｄから突出し、封止樹脂体５０の外部で屈曲されて、さらにＺ方向上方に延びている。 The output terminals 63P1 and 63P2 are also referred to as AC terminals. The output terminal 63P1 is connected to the island 612. The output terminal 63P1 is continuous with the end of the island 612 opposite to the island 610, and is extended obliquely to be apart from the island 612 in the X direction. Specifically, it is obliquely extended to a position not overlapping the switching element 700L in the X direction. Then, the tip is extended in the Y direction, protrudes from the side surface 50d opposite to the positive electrode terminal 63B1, is bent outside the sealing resin body 50, and extends further in the Z direction.
　出力端子６３Ｐ２は、アイランド６１４に連なっている。出力端子６３Ｐ２は、アイランド６１４においてアイランド６１０側とは反対の端に連なり、途中まで、Ｘ方向においてアイランド６１４から遠ざかるように斜めに延設されている。具体的には、Ｘ方向においてスイッチング素子７０１Ｌとは重ならない位置まで、斜めに延設されている。そして、その先でＹ方向に延設されて側面５０ｄから突出し、封止樹脂体５０の外部で屈曲されて、さらにＺ方向上方に延びている。出力端子６３Ｐ１，６３Ｐ２も、ＹＺ面において略Ｌ字状をなしている。出力端子６３Ｐ１，６３Ｐ２は、Ｘ方向において互いに線対称配置とされている。 The output terminal 63P2 is connected to the island 614. The output terminal 63P2 is continuous with the end of the island 614 opposite to the island 610, and is extended diagonally so as to be apart from the island 614 in the X direction. Specifically, it is obliquely extended to a position not overlapping the switching element 701L in the X direction. Then, it is extended in the Y direction at the tip thereof, protrudes from the side surface 50d, is bent outside the sealing resin body 50, and further extends upward in the Z direction. The output terminals 63P1 and 63P2 are also substantially L-shaped in the YZ plane. The output terminals 63P1 and 63P2 are arranged in line symmetry with each other in the X direction.
　出力端子６３Ｐ１，６３Ｐ２も、タイバー痕６６ａ，６６ｂをそれぞれ有している。タイバー痕６６ａは、Ｙ方向においてアイランド６１に近い１段目のタイバー６６１ａの切断痕であり、タイバー痕６６ｂは、タイバー６６１ａよりもアイランド６１から離れた２段目のタイバー６６１ｂの切断痕である。出力端子６３Ｐ１，６３Ｐ２は、それぞれの延設方向において、タイバー痕６６ａ，６６ｂの間に屈曲部を有している。 The output terminals 63P1 and 63P2 also have tie bar marks 66a and 66b, respectively. The tie bar mark 66a is a cut mark of the first tie bar 661a closer to the island 61 in the Y direction, and the tie bar mark 66b is a cut mark of the second tie bar 661b farther from the island 61 than the tie bar 661a. The output terminals 63P1 and 63P2 have bending portions between the tie bar marks 66a and 66b in the extending directions.
　図６及び図１４などに示すように、主端子６３のそれぞれにおいて、屈曲部の幅が狭くされている。主端子６３では、屈曲部を含むように幅狭部６３ａが設けられ、延設方向において幅狭部６３ａを挟むように幅広部が設けられている。具体的には、タイバー痕６６ａ，６６ｂを有する部分がそれぞれ幅広部とされ、その間に屈曲部を含む幅狭部６３ａが設けられている。このように、主電流が流れる主端子６３において、屈曲部を形成する部分の幅を狭くして剛性を低くしたため、屈曲部を形成する際の曲げ荷重を小さくすることができる。また、曲げ精度を向上することもできる。 As shown in FIG. 6 and FIG. 14 etc., in each of the main terminals 63, the width of the bent portion is narrowed. In the main terminal 63, a narrow portion 63a is provided so as to include the bent portion, and a wide portion is provided so as to sandwich the narrow portion 63a in the extending direction. Specifically, the portions having the tie bar marks 66a and 66b are wide portions, and a narrow portion 63a including a bent portion is provided therebetween. As described above, in the main terminal 63 through which the main current flows, the width of the portion forming the bent portion is narrowed to reduce the rigidity, so that the bending load at the time of forming the bent portion can be reduced. Also, the bending accuracy can be improved.
　図６及び図９などに示すように、主端子６３のそれぞれにおいて、突出先端の角部が面取りされている。換言すれば、テーパ形状とされている。これにより、バスバー２７とのアーク溶接時において、角部への電界集中を抑制することができる。本実施形態では、回転電機１を回転させるために、主端子６３に比較的大きな電流（数十アンペア）が流れるため、主端子６３の幅が広い。これに対し、面取り構造を採用することで、幅方向中央で安定して溶接を行うことができる。 As shown in FIG. 6 and FIG. 9 etc., in each of the main terminals 63, the corner portion of the projecting tip is chamfered. In other words, it has a tapered shape. Thereby, at the time of arc welding with the bus bar 27, it is possible to suppress the concentration of the electric field to the corner. In the present embodiment, a relatively large current (tens of amps) flows to the main terminal 63 in order to rotate the rotating electrical machine 1, so the width of the main terminal 63 is wide. On the other hand, by adopting a chamfering structure, welding can be stably performed at the center in the width direction.
　信号端子６４は、外部に信号を出力、又は、外部から信号を入力するための端子である。複数の信号端子６４は、Ｘ方向に並んで配置されている。各信号端子６４は、Ｙ方向に延設されて側面５０ｄから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。信号端子６４も、ＹＺ面において略Ｌ字状をなしている。本実施形態では、信号端子６４が、配線基板２２に挿入実装される。 The signal terminal 64 is a terminal for outputting a signal to the outside or inputting a signal from the outside. The plurality of signal terminals 64 are arranged side by side in the X direction. Each signal terminal 64 is extended in the Y direction, protrudes from the side surface 50d, is bent outside the sealing resin body 50, and extends upward in the Z direction. The signal terminal 64 is also substantially L-shaped in the YZ plane. In the present embodiment, the signal terminals 64 are inserted into and mounted on the wiring board 22.
　図１６、図１９、及び図２１などに示すように、信号端子６４は、配線基板２２に接続されて、グランド電位（ＧＮＤ）とされる信号端子６４０を含んでいる。信号端子６４０は、複数の信号端子６４の真ん中に配置されている。信号端子６４０は、アイランド６１０における信号端子６４側の端部中央に連なっている。信号端子６４０は、リードフレーム６０におけるＸ方向の中心に配置されている。 As shown in FIGS. 16, 19, 21 and the like, the signal terminal 64 includes a signal terminal 640 connected to the wiring board 22 and set to the ground potential (GND). The signal terminal 640 is disposed in the middle of the plurality of signal terminals 64. The signal terminal 640 is continuous with the center of the end of the island 610 on the signal terminal 64 side. The signal terminal 640 is disposed at the center of the lead frame 60 in the X direction.
　図２１に示すように、信号端子６４０は、ボンディングワイヤ４１によって、駆動部８０のパッド８１と接続されている。このように、グランド電位の信号端子６４０を設けたので、負極端子６３Ｅ１，６３Ｅ２や負極端子６３Ｅ１，６３Ｅ２に連なる配線部６２１，６２３にボンディングワイヤ４１を接続して、グランド電位を確保しなくてもよい。すなわち、アイランド６１２，６１４や配線部６２０，６２２など、他の電位の部分を跨いでボンディングワイヤ４１を接続しなくてもよい。したがって、ボンディングワイヤ４１が他の電位の部分に接触し、ショートが発生するのを抑制することができる。 As shown in FIG. 21, the signal terminal 640 is connected to the pad 81 of the drive unit 80 by the bonding wire 41. As described above, since the signal terminal 640 of the ground potential is provided, the bonding wire 41 is connected to the wiring portions 621 and 623 connected to the negative terminals 63E1 and 63E2 and the negative terminals 63E1 and 63E2 without securing the ground potential. Good. That is, the bonding wires 41 may not be connected across the other potential parts such as the islands 612 and 614 and the wiring parts 620 and 622. Therefore, the bonding wire 41 can be prevented from coming into contact with other potential parts to cause a short circuit.
　図１６及び図２１などに示すように、信号端子６４は、２つの信号端子６４１を含んでいる。信号端子６４１の１つは、アイランド６１２における信号端子６４側の端部に連なっており、別の信号端子６４１は、アイランド６１４における信号端子６４側の端部に連なっている。アイランド６１２は、配線部６２０及びクリップ９００を介して、スイッチング素子７００Ｈのソース電極７２に接続されている。アイランド６１４は、配線部６２２及びクリップ９００を介して、スイッチング素子７０１Ｈのソース電極７２に接続されている。 As shown in FIGS. 16 and 21, the signal terminal 64 includes two signal terminals 641. One of the signal terminals 641 is continuous with the end of the island 612 on the signal terminal 64 side, and the other signal terminal 641 is continuous with the end of the island 614 on the signal terminal 64 side. The island 612 is connected to the source electrode 72 of the switching element 700H via the wiring portion 620 and the clip 900. The island 614 is connected to the source electrode 72 of the switching element 701H via the wiring portion 622 and the clip 900.
　配線部６２０及びアイランド６１２は、スイッチング素子７００Ｈのソース電極７２と出力端子６３Ｐ１とを繋ぐ配線である。配線部６２２及びアイランド６１４は、スイッチング素子７０１Ｈのソース電極７２と出力端子６３Ｐ２とを繋ぐ配線である。信号端子６４１には、制御回路部２６の駆動回路から、上アーム側の駆動信号の基準となる駆動用のソース電位が供給される。したがって、出力端子６３Ｐ１，６３Ｐ２からソース電位が供給される構成に較べて、配線のインダクタンスを低減することができる。これにより、制御回路部２６によるスイッチング素子７０の制御性を向上し、スイッチングの遅延などを抑制することができる。なお、シャント抵抗器９０１の高電位側とボンディングワイヤ４１を介して接続される信号端子６４に、制御回路部２６の駆動回路から、下アーム側の駆動信号の基準となる駆動用のソース電位が供給される。 The wiring portion 620 and the island 612 are wires that connect the source electrode 72 of the switching element 700H and the output terminal 63P1. The wiring portion 622 and the island 614 are wires that connect the source electrode 72 of the switching element 701H and the output terminal 63P2. To the signal terminal 641, a drive source potential for driving which is a reference of the drive signal on the upper arm side is supplied from the drive circuit of the control circuit unit 26. Therefore, the inductance of the wiring can be reduced compared to the configuration in which the source potential is supplied from the output terminals 63P1 and 63P2. Thereby, the controllability of the switching element 70 by the control circuit unit 26 can be improved, and the delay of switching can be suppressed. Note that the drive source potential serving as the reference of the lower arm side drive signal from the drive circuit of the control circuit unit 26 is connected to the signal terminal 64 connected to the high potential side of the shunt resistor 901 via the bonding wire 41. Supplied.
　本実施形態では、半導体モジュール４０が、１５本の信号端子６４を有している。上記したように、１本がグランド電位用の信号端子６４０であり、２本が上アーム側のソース電位用の信号端子６４１である。残りの１２本のうち、４本がスイッチング素子７０それぞれの駆動信号用であり、４本が２つのシャント抵抗器９０１用である。１本が配線基板２２側からの電源ＶＣＣ（たとえば５Ｖ）取得用であり、１本が感温ダイオードのいずれか１つの順方向電圧Ｖｆの出力用である。１本が異常などの通知用であり、１本がボンディングワイヤ４１が接続されていない予備である。 In the present embodiment, the semiconductor module 40 has fifteen signal terminals 64. As described above, one is a signal terminal 640 for the ground potential, and two are signal terminals 641 for the source potential on the upper arm side. Of the remaining twelve, four are for drive signals of the switching elements 70, and four are for two shunt resistors 901. One is for acquiring the power supply VCC (for example, 5 V) from the wiring substrate 22 side, and one is for output of any one forward voltage Vf of the temperature sensitive diodes. One is for notification of abnormality or the like, and one is a spare to which the bonding wire 41 is not connected.
　図１９及び図２１に示すように、信号端子６４０を除く信号端子６４は、クランク形状の部分であるクランク部６４ａを少なくとも１つ有している。クランク部６４ａを有することで、Ｘ方向において、複数の信号端子６４の占める幅が、アイランド６１側の端部、すなわち、ボンディングワイヤ４１の接続側よりも、配線基板２２との接続側で狭くされている。 As shown in FIGS. 19 and 21, the signal terminal 64 excluding the signal terminal 640 has at least one crank portion 64a which is a crank-shaped portion. By having the crank portion 64a, the width occupied by the plurality of signal terminals 64 in the X direction is narrowed on the connection side with the wiring substrate 22 than the end on the island 61 side, that is, the connection side of the bonding wire 41 ing.
　本実施形態では、クランク部６４ａを２つ有する信号端子６４において、クランク部６４ａ間の直線部分の長さが２ｍｍ以上となるように、クランク部６４ａの位置が設定されている。クランク部６４ａの１つはタイバー６６１ａの近傍に設けられ、別のクランク部６４ａはタイバー６６１ｂの近傍に設けられている。これにより、型（ダイ）を用いて信号端子６４を曲げ加工する際に、信号端子６４の擦れによる型の摩耗を低減することができる。また、曲げ精度を向上することもできる。 In the present embodiment, in the signal terminal 64 having two cranks 64a, the position of the cranks 64a is set such that the length of the straight portion between the cranks 64a is 2 mm or more. One of the crank portions 64a is provided in the vicinity of the tie bar 661a, and the other crank portion 64a is provided in the vicinity of the tie bar 661b. As a result, when the signal terminal 64 is bent using a die (die), the wear of the die due to the rubbing of the signal terminal 64 can be reduced. Also, the bending accuracy can be improved.
　図６及び図７に示すように、信号端子６４における配線基板２２への実装部分は、ＸＹ面において千鳥配置とされている。すなわち、Ｘ方向において隣り合う信号端子６４が、Ｙ方向にずれて配置されている。信号端子６４は、２段配置とされている。これにより、Ｘ方向において信号端子６４の占めるスペースを低減し、ひいては半導体モジュール４０を小型化することができる。また、配線基板２２も小型化することができる。さらには、隣り合う信号端子６４がＹ方向において離れた位置となるため、端子間でのノイズや干渉を低減することができる。 As shown in FIGS. 6 and 7, the mounting portions of the signal terminals 64 on the wiring board 22 are arranged in a zigzag in the XY plane. That is, the signal terminals 64 adjacent to each other in the X direction are shifted in the Y direction. The signal terminals 64 are arranged in two stages. Thus, the space occupied by the signal terminals 64 in the X direction can be reduced, and the semiconductor module 40 can be miniaturized. In addition, the wiring substrate 22 can also be miniaturized. Furthermore, since the adjacent signal terminals 64 are spaced apart in the Y direction, noise and interference between the terminals can be reduced.
　信号端子６４は、Ｘ方向において、出力端子６３Ｐ１，６３Ｐ２の間に配置されている。図２２は、出力端子６３Ｐ１，６３Ｐ２と信号端子６４の配置イメージを示す模式図である。図２２の上段が本実施形態を示し、真ん中の段と下段の２つは参考例を示している。参考例においては、本実施形態の関連する要素の符号に対し、末尾にｒを付与している。本実施形態では、出力端子６３Ｐ１，６３Ｐ２の間に信号端子６４が集約されている。信号端子６４のＸ方向両端に、出力端子６３Ｐ１，６３Ｐ２が配置されている。このため、出力端子６３Ｐ１と一端側の信号端子６４との間に、破線で示す空きのスペース６４ｂが生じ、出力端子６３Ｐ２と他端側の信号端子６４との間にも同様にスペース６４ｂが生じる。 The signal terminal 64 is disposed between the output terminals 63P1 and 63P2 in the X direction. FIG. 22 is a schematic view showing an arrangement image of the output terminals 63P1 and 63P2 and the signal terminal 64. As shown in FIG. The upper part of FIG. 22 shows the present embodiment, and the middle part and the lower part show reference examples. In the reference example, r is added to the end of the reference numerals of the relevant elements of this embodiment. In the present embodiment, the signal terminals 64 are integrated between the output terminals 63P1 and 63P2. Output terminals 63P1 and 63P2 are disposed at both ends of the signal terminal 64 in the X direction. Therefore, a vacant space 64b indicated by a broken line is generated between the output terminal 63P1 and the signal terminal 64 at one end, and a space 64b is similarly generated between the output terminal 63P2 and the signal terminal 64 at the other end. .
　これに対し、真ん中の段の参考例では、出力端子６３Ｐ１ｒが本実施形態同様の配置とされ、出力端子６３Ｐ２ｒが信号端子６４ｒの間に配置されて、複数の信号端子６４ｒが二分されている。これによれば、出力端子６３Ｐ２ｒの両側にスペース６４ｂｒが生じる。また、下段の参考例では、出力端子６３Ｐ１ｒ，６３Ｐ２ｒが隣り合って配置されるとともに、出力端子６３Ｐ１ｒ，６３Ｐ２ｒによって複数の信号端子６４ｒが二分されている。これによれば、出力端子６３Ｐ１ｒ，６３Ｐ２ｒそれぞれの両側にスペース６４ｂｒが生じる。したがって、本実施形態のように、出力端子６３Ｐ１，６３Ｐ２の間に信号端子６４を集約することで、Ｘ方向において外部接続用端子の配置スペースを小さくすることができる。すなわち、無駄なスペースを減らし、半導体モジュール４０の体格を小型化することができる。 On the other hand, in the reference example in the middle stage, the output terminal 63P1r is disposed in the same manner as in the present embodiment, the output terminal 63P2r is disposed between the signal terminals 64r, and the plurality of signal terminals 64r are divided into two. According to this, spaces 64br are generated on both sides of the output terminal 63P2r. Further, in the lower reference example, the output terminals 63P1r and 63P2r are disposed adjacent to each other, and the plurality of signal terminals 64r are divided into two by the output terminals 63P1r and 63P2r. According to this, spaces 64br are generated on both sides of each of the output terminals 63P1r and 63P2r. Therefore, as in the present embodiment, by arranging the signal terminals 64 between the output terminals 63P1 and 63P2, the arrangement space for the external connection terminals can be reduced in the X direction. That is, waste space can be reduced and the size of the semiconductor module 40 can be miniaturized.
　図１６及び図２１に示すように、信号端子６４におけるアイランド６１側の端部、すなわち、ボンディングワイヤ４１の接続部分は、信号端子６４の他の部分よりも、Ｘ方向の幅が広くされている。このように、信号端子６４におけるアイランド６１側の端部の幅が広いため、ボンディングワイヤ４１を安定的に接続することができる。一方、ボンディングワイヤ４１との接続部分を除く部分の幅は狭いため、上記したクランク部６４ａとも相俟って、信号端子６４の配置スペースを小さくすることができる。また、幅の広いアイランド６１側の端部が封止樹脂体５０に引っかかるため、ロックホール効果により、配置スペースを小さくしつつも信号端子６４の抜けを抑制することができる。 As shown in FIGS. 16 and 21, the end of the signal terminal 64 on the island 61 side, that is, the connection portion of the bonding wire 41 is wider in the X direction than the other portions of the signal terminal 64. . As described above, since the width of the end of the signal terminal 64 on the side of the island 61 is wide, the bonding wire 41 can be stably connected. On the other hand, since the width of the part excluding the connection part with the bonding wire 41 is narrow, the arrangement space of the signal terminal 64 can be made small in combination with the above-mentioned crank part 64a. In addition, since the end on the side of the wide island 61 is caught by the sealing resin body 50, it is possible to suppress the removal of the signal terminal 64 while reducing the arrangement space by the lock hole effect.
　リードフレーム６０において、ボンディングワイヤ４１の接続部分は、平坦とされている。ボンディングワイヤ４１は、信号端子６４と、上記した凸部６１１ｂ，６１３ｂにそれぞれ接続されている。凸部６１１ｂ，６１３ｂにおける接続部分及び信号端子６４における接続部分は、いずれも平坦とされている。具体的には、叩くことで接続部分の平坦度が確保されている。これにより、ボンディングワイヤ４１の接続信頼性を向上することができる。また、打ち抜き加工することでリードフレーム６０を形成する際に生じる図示しないバリを叩いて潰し、ボンディング時の異物噛み込みを抑制することもできる。 In the lead frame 60, the connection portion of the bonding wire 41 is flat. The bonding wires 41 are respectively connected to the signal terminals 64 and the above-described convex portions 611 b and 613 b. The connection portions of the convex portions 611 b and 613 b and the connection portions of the signal terminals 64 are both flat. Specifically, the flatness of the connection portion is secured by tapping. Thereby, the connection reliability of the bonding wire 41 can be improved. Further, by punching, burrs (not shown) generated when forming the lead frame 60 can be struck and crushed to suppress foreign matter biting at the time of bonding.
　ダミー端子６５は、電気的な接続機能を提供せず、タイバーカット前の状態で、タイバー６６に連結される部分である。図７及び図１６などに示すように、ダミー端子６５の一部は、Ｙ方向に延設されて封止樹脂体５０の側面５０ｃから突出している。ダミー端子６５の残りは、Ｙ方向に延設されて側面５０ｄから突出している。それぞれ４つのダミー端子６５が配置されている。 The dummy terminal 65 does not provide an electrical connection function, and is a portion connected to the tie bar 66 before the tie bar is cut. As shown in FIGS. 7 and 16, a part of the dummy terminal 65 is extended in the Y direction and protrudes from the side surface 50c of the sealing resin body 50. The remainder of the dummy terminal 65 is extended in the Y direction and protrudes from the side surface 50 d. Four dummy terminals 65 are arranged respectively.
　正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２側において、アイランド６１１，６１３及び配線部６２０，６２２のそれぞれにダミー端子６５が連なっている。図１６などに示すように、ダミー端子６５の１つは、アイランド６１１における信号端子６４とは反対の端部であって、正極端子６３Ｂ１側とは反対の端からＹ方向に延設されている。別のダミー端子６５は、アイランド６１３における信号端子６４とは反対の端部であって、正極端子６３Ｂ２側とは反対の端からＹ方向に延設されている。別のダミー端子６５は、配線部６２０の先端、すなわちアイランド６１２とは反対の端部からＹ方向に延設されている。別のダミー端子６５は、配線部６２２の先端、すなわちアイランド６１４とは反対の端部からＹ方向に延設されている。 On the side of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2, the dummy terminals 65 are connected to the islands 611 and 613 and the wiring parts 620 and 622, respectively. As shown in FIG. 16 etc., one of the dummy terminals 65 is an end opposite to the signal terminal 64 in the island 611 and extends in the Y direction from the end opposite to the positive electrode terminal 63B1 side. . Another dummy terminal 65 is an end of the island 613 opposite to the signal terminal 64 and extends in the Y direction from the end opposite to the positive electrode terminal 63B2 side. Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 620, that is, the end opposite to the island 612. Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 622, that is, the end opposite to the island 614.
　Ｘ方向において、負極端子６３Ｅ１と正極端子６３Ｂ１の間、負極端子６３Ｅ２と正極端子６３Ｂ２の間に、ダミー端子６５がそれぞれ１つ配置されている。また、正極端子６３Ｂ１，６３Ｂ２の間に２つのダミー端子６５が配置されている。図２１に示すように、正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２側のダミー端子６５は、１段目のタイバー６６０ａまでそれぞれ延設されている。このため、タイバーカット後の状態では、図７及び図１６などに示すように、正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２が有するタイバー痕６６ａとＹ方向においてほぼ同じ位置まで延設されている。 In the X direction, one dummy terminal 65 is disposed between the negative electrode terminal 63E1 and the positive electrode terminal 63B1, and between the negative electrode terminal 63E2 and the positive electrode terminal 63B2. Further, two dummy terminals 65 are disposed between the positive electrode terminals 63B1 and 63B2. As shown in FIG. 21, the dummy terminals 65 on the side of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are extended to the first stage tie bar 660a. Therefore, in the state after tie bar cutting, as shown in FIG. 7 and FIG. 16 etc., the tie bar mark 66a of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 is extended to almost the same position in the Y direction. .
　出力端子６３Ｐ１，６３Ｐ２及び信号端子６４側において、ダミー端子６５の１つは、配線部６２１の先端、すなわち負極端子６３Ｅ１とは反対の端部からＹ方向に延設されている。別のダミー端子６５は、配線部６２３の先端、すなわち負極端子６３Ｅ２とは反対の端部からＹ方向に延設されている。残りの２つのダミー端子６５は、ボンディングワイヤ４１を介してシャント抵抗器９０１と接続される信号端子６４の一部に連なり、該信号端子６４の外側にそれぞれ配置されている。 On the side of the output terminals 63P1 and 63P2 and the signal terminal 64, one of the dummy terminals 65 is extended in the Y direction from the end of the wiring portion 621, that is, the end opposite to the negative electrode terminal 63E1. Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 623, that is, the end opposite to the negative electrode terminal 63E2. The remaining two dummy terminals 65 are connected to a part of the signal terminal 64 connected to the shunt resistor 901 via the bonding wire 41 and are respectively arranged outside the signal terminal 64.
　Ｘ方向において、出力端子６３Ｐ１，６３Ｐ２の外側にダミー端子６５がそれぞれ１つ配置されている。また、出力端子６３Ｐ１，６３Ｐ２と信号端子６４との間にダミー端子６５がそれぞれ１つ配置されている。図２１に示すように、出力端子６３Ｐ１，６３Ｐ２及び信号端子６４側のダミー端子６５は、１段目のタイバー６６１ａまで延設されている。このため、タイバーカット後の状態では、図７及び図１６などに示すように、出力端子６３Ｐ１，６３Ｐ２及び信号端子６４が有するタイバー痕６６ａとＹ方向においてほぼ同じ位置まで延設されている。 One dummy terminal 65 is disposed outside the output terminals 63P1 and 63P2 in the X direction. In addition, one dummy terminal 65 is disposed between the output terminals 63P1 and 63P2 and the signal terminal 64, respectively. As shown in FIG. 21, the output terminals 63P1 and 63P2 and the dummy terminal 65 on the signal terminal 64 side are extended to the tie bar 661a of the first stage. Therefore, in the state after tie bar cutting, as shown in FIG. 7 and FIG. 16 etc., the tie bar mark 66a of the output terminals 63P1 and 63P2 and the signal terminal 64 is extended to almost the same position in the Y direction.
　このように、ダミー端子６５は、タイバー痕６６ａとほぼ同じ位置まで延設されている。すなわち、主端子６３及び信号端子６４の屈曲部よりも手前の位置までしか延設されていない。このため、ダミー端子６５は、主端子６３及び信号端子６４とは異なり、屈曲部を有していない。ダミー端子６５の幅は、主端子６３の幅よりも狭くされている。 Thus, the dummy terminal 65 is extended to substantially the same position as the tie bar mark 66 a. That is, it extends only to a position before the bent portions of the main terminal 63 and the signal terminal 64. Therefore, unlike the main terminal 63 and the signal terminal 64, the dummy terminal 65 does not have a bent portion. The width of the dummy terminal 65 is smaller than the width of the main terminal 63.
　（スイッチング素子）
　スイッチング素子７０は縦型構造をなしており、チップの厚み方向であるＺ方向の両面に主電極を有している。また、一方の面に、第１パッドである上記したパッド７１を有している。本実施形態では、アイランド６１との対向面に図示しないドレイン電極が形成され、ドレイン電極形成面と反対の面にソース電極７２が形成されている。パッド７１は、ソース電極７２と同じ主面において、ソース電極７２とは異なる位置に形成されている。スイッチング素子７０には、感温ダイオードが一体的に形成されている。 (Switching element)
The switching element 70 has a vertical structure, and has main electrodes on both sides in the Z direction which is the thickness direction of the chip. In addition, the pad 71 described above, which is a first pad, is provided on one side. In the present embodiment, the drain electrode (not shown) is formed on the surface facing the island 61, and the source electrode 72 is formed on the surface opposite to the drain electrode formation surface. The pad 71 is formed on the same main surface as the source electrode 72 at a position different from that of the source electrode 72. In the switching element 70, a temperature sensitive diode is integrally formed.
　スイッチング素子７０は、平面矩形状をなしている。図２１に示すように、パッド７１は、スイッチング素子７０の１つの辺、具体的には駆動部８０との対向辺に沿って配置されている。本実施形態では、スイッチング素子７０が４つのパッド７１を有しており、ソース電位検出用、ゲート電極用、感温ダイオードのアノード用、カソード用の順に並んで配置されている。 The switching element 70 has a planar rectangular shape. As shown in FIG. 21, the pad 71 is arranged along one side of the switching element 70, specifically, the side opposite to the drive unit 80. In the present embodiment, the switching element 70 has four pads 71, which are arranged in order of source potential detection, gate electrode, anode of temperature sensitive diode, and cathode.
　スイッチング素子７０は、上記したように、第１の上下アームを構成する上アーム側のスイッチング素子７００Ｈと、第１の上下アームを構成する下アーム側のスイッチング素子７００Ｌを有している。また、第２の上下アームを構成する上アーム側のスイッチング素子７０１Ｈと、第２の上下アームを構成する下アーム側のスイッチング素子７０１Ｌを有している。 As described above, the switching element 70 includes the switching element 700H on the upper arm side constituting the first upper and lower arms and the switching element 700L on the lower arm side constituting the first upper and lower arms. In addition, it has a switching element 701H on the upper arm side constituting the second upper and lower arms, and a switching element 701L on the lower arm side constituting the second upper and lower arms.
　スイッチング素子７００Ｈはアイランド６１１に配置され、スイッチング素子７００Ｌはアイランド６１２に配置されている。スイッチング素子７０１Ｈはアイランド６１３に配置され、スイッチング素子７０１Ｌはアイランド６１４に配置されている。上アーム側のスイッチング素子７００Ｈ，７０１Ｈは、対応するアイランド６１１，６１３同様、Ｘ方向において線対称配置とされている。下アーム側のスイッチング素子７００Ｌ，７０１Ｌは、対応するアイランド６１２，６１４同様、Ｘ方向において線対称配置とされている。 The switching element 700H is disposed on the island 611, and the switching element 700L is disposed on the island 612. The switching element 701 H is disposed on the island 613, and the switching element 701 L is disposed on the island 614. Similar to the corresponding islands 611 and 613, the switching elements 700H and 701H on the upper arm side are arranged in line symmetry in the X direction. The lower arm side switching elements 700L and 701L are arranged in line symmetry in the X direction as in the corresponding islands 612 and 614.
　上アーム側のスイッチング素子７００Ｈ，７０１Ｈは、パッド７１とソース電極７２の並び方向がＹ方向となるように配置されている。すなわち、パッド７１の並び方向がＸ方向となるように配置されている。一方、下アーム側のスイッチング素子７００Ｌ，７０１Ｌは、パッド７１とソース電極７２の並び方向がＸ方向となるように配置されている。すなわち、パッド７１の並び方向がＹ方向となるように配置されている。 The switching elements 700H and 701H on the upper arm side are arranged such that the alignment direction of the pad 71 and the source electrode 72 is the Y direction. That is, the pads 71 are arranged in the X direction. On the other hand, the switching elements 700L and 701L on the lower arm side are arranged such that the alignment direction of the pad 71 and the source electrode 72 is the X direction. That is, the arrangement direction of the pads 71 is arranged in the Y direction.
　図１６及び図２１などに示すように、スイッチング素子７０は、対応するアイランド６１に対して、お互いの中心が略一致するように位置決め配置されている。下アーム側のスイッチング素子７００Ｌ，７０１Ｌは、同じ相の上アーム側のスイッチング素子７００Ｈ，７０１Ｈに対して、Ｘ方向外側に配置されている。Ｘ方向において、スイッチング素子７００Ｌ、スイッチング素子７００Ｈ、スイッチング素子７０１Ｈ、スイッチング素子７０１Ｌの順に並んでいる。 As shown in FIG. 16 and FIG. 21 etc., the switching elements 70 are positioned and arranged with respect to the corresponding islands 61 so that their centers substantially coincide with each other. The lower arm side switching elements 700L and 701L are disposed outside in the X direction with respect to the upper arm side switching elements 700H and 701H of the same phase. In the X direction, the switching element 700L, the switching element 700H, the switching element 701H, and the switching element 701L are arranged in this order.
　各スイッチング素子７０のドレイン電極に接続される正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、スイッチング素子７０と同じ側から見ると、出力端子６３Ｐ１、正極端子６３Ｂ１、正極端子６３Ｂ２、出力端子６３Ｐ２の順に並んでいる。このように、スイッチング素子７０の並び順と、正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２の並び順が一致している。また、主端子６３及び信号端子６４は、相対する側面５０ｃ，５０ｄのみから突出している。以上の配置を採用することにより、リードフレーム６０のレイアウトがシンプルとなり、配線密度を上げて半導体モジュール４０の体格を小型化することができる。また、封止樹脂体５０の２面のみから主端子６３及び信号端子６４が突出しているため、制御装置部２０を構成する際にも、バスバー２７との接続構造を簡素化することができる。 When viewed from the same side as the switching element 70, the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 connected to the drain electrode of each switching element 70 are of the output terminal 63P1, the positive terminal 63B1, the positive terminal 63B2 and the output terminal 63P2. They are arranged in order. As described above, the arrangement order of the switching elements 70 and the arrangement order of the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 coincide with each other. Further, the main terminal 63 and the signal terminal 64 protrude only from the opposite side surfaces 50c and 50d. By adopting the above arrangement, the layout of the lead frame 60 is simplified, and the physical size of the semiconductor module 40 can be miniaturized by increasing the wiring density. Further, since the main terminals 63 and the signal terminals 64 protrude from only the two surfaces of the sealing resin body 50, the connection structure with the bus bar 27 can be simplified also when configuring the control unit 20.
　図１２、図１３、及び図１５に示すように、スイッチング素子７０のドレイン電極は、はんだ４２を介して対応するアイランド６１と接続されている。ソース電極７２は、はんだ４２を介して、対応する架橋部材９０と接続されている。スイッチング素子７００Ｈのドレイン電極がアイランド６１１と接続され、スイッチング素子７００Ｌのドレイン電極がアイランド６１２と接続されている。スイッチング素子７０１Ｈのドレイン電極がアイランド６１３と接続され、スイッチング素子７０１Ｌのドレイン電極がアイランド６１４と接続されている。 As shown in FIGS. 12, 13 and 15, the drain electrode of the switching element 70 is connected to the corresponding island 61 through the solder 42. Source electrode 72 is connected to corresponding bridge member 90 via solder 42. The drain electrode of the switching element 700H is connected to the island 611, and the drain electrode of the switching element 700L is connected to the island 612. The drain electrode of the switching element 701H is connected to the island 613, and the drain electrode of the switching element 701L is connected to the island 614.
　（駆動部）
　駆動部８０は、スイッチング素子７０を駆動させる。本実施形態では、制御回路部２６の駆動回路にて生成された駆動信号が、駆動部８０を介して、スイッチング素子７０それぞれのゲート電極に入力される。すなわち、駆動部８０から出力された駆動信号により、スイッチング素子７０が駆動される。駆動部８０は、ＡＳＩＣなどのＩＣチップとして構成されている。図１５に示すように、駆動部８０は、Ａｇペーストなどの導電性接着材４３を介してアイランド６１０に固定されている。駆動部８０におけるアイランド６１０への固定面と反対の面には、第２パッドである複数のパッド８１が形成されている。 (Drive part)
The drive unit 80 drives the switching element 70. In the present embodiment, the drive signal generated by the drive circuit of the control circuit unit 26 is input to the gate electrode of each of the switching elements 70 via the drive unit 80. That is, the switching element 70 is driven by the drive signal output from the drive unit 80. The drive unit 80 is configured as an IC chip such as an ASIC. As shown in FIG. 15, the driving unit 80 is fixed to the island 610 via a conductive adhesive 43 such as Ag paste. On the surface opposite to the surface fixed to the island 610 in the drive unit 80, a plurality of pads 81, which are second pads, are formed.
　図２１に示すように、パッド８１の一部は、ボンディングワイヤ４１を介して、スイッチング素子７０のパッド７１に接続されている。別のパッド８１は、ボンディングワイヤ４１を介して、アイランド６１１，６１３に接続されている。パッド８１の残りは、ボンディングワイヤ４１を介して、信号端子６４に接続されている。 As shown in FIG. 21, a part of the pad 81 is connected to the pad 71 of the switching element 70 via the bonding wire 41. Another pad 81 is connected to the islands 611 and 613 via bonding wires 41. The rest of the pad 81 is connected to the signal terminal 64 through the bonding wire 41.
　駆動部８０は、スイッチング素子７０の保護するための回路を有している。たとえば、スイッチング素子７０それぞれのゲート－ソース間電圧Ｖｇｓを検出する回路と、ドレイン－ソース間電圧Ｖｄｓを検出する回路を有している。駆動部８０は、パッド７１から、ボンディングワイヤ４１を介してソース電位を取得する。また、アイランド６１１，６１３から、ボンディングワイヤ４１を介してドレイン電位を取得する。駆動部８０は、それぞれの感温ダイオードの順方向電圧Ｖｆを検出する回路を有している。駆動部８０は、パッド７１からボンディングワイヤ４１を介して、アノード電位及びカソード電位を取得する。 The drive unit 80 has a circuit for protecting the switching element 70. For example, it has a circuit for detecting the gate-source voltage Vgs of each of the switching elements 70 and a circuit for detecting the drain-source voltage Vds. The drive unit 80 acquires the source potential from the pad 71 via the bonding wire 41. In addition, the drain potential is acquired from the islands 611 and 613 through the bonding wire 41. The drive unit 80 has a circuit for detecting the forward voltage Vf of each temperature sensitive diode. The drive unit 80 acquires the anode potential and the cathode potential from the pad 71 via the bonding wire 41.
　さらに駆動部８０は、ゲート－ソース間電圧Ｖｇｓ、ドレイン－ソース間電圧Ｖｄｓ、及び順方向電圧Ｖｆに基づいて、スイッチング素子７０の異常を判定する判定回路を有している。判定回路は、具体的には、スイッチング素子７０の過熱、過電流、上下アーム同時オンなどが生じているか否かを判定する。駆動部８０は、判定結果を、信号端子６４を通じて制御回路部２６に通知する通知回路を有している。 The drive unit 80 further includes a determination circuit that determines an abnormality of the switching element 70 based on the gate-source voltage Vgs, the drain-source voltage Vds, and the forward voltage Vf. Specifically, the determination circuit determines whether overheating of the switching element 70, overcurrent, simultaneous turning on of the upper and lower arms, and the like have occurred. The drive unit 80 has a notification circuit that notifies the control circuit unit 26 of the determination result through the signal terminal 64.
　駆動部８０は、平面略矩形状をなしている。駆動部８０は、Ｘ方向においてリードフレーム６０の中心線に対し、線対称配置とされている。Ｘ方向において、駆動部８０の中心がリードフレーム６０の中心線と略一致している。また、Ｘ方向において、駆動部８０の中心がアイランド６１０の中心と略一致している。したがって、下アーム側のスイッチング素子７００Ｌ，７０１Ｌは、駆動部８０に対して線対称配置とされている。 The drive unit 80 has a substantially rectangular planar shape. The drive units 80 are arranged in line symmetry with respect to the center line of the lead frame 60 in the X direction. The center of the drive unit 80 substantially coincides with the center line of the lead frame 60 in the X direction. Further, in the X direction, the center of the drive unit 80 substantially coincides with the center of the island 610. Accordingly, the switching elements 700L and 701L on the lower arm side are arranged in line symmetry with respect to the drive unit 80.
　駆動部８０は、下アーム側のスイッチング素子７００Ｌ，７０１Ｈの間に配置されている。上アーム側のスイッチング素子７００Ｈは、Ｙ方向においてスイッチング素子７００Ｌ及び駆動部８０と対向している。スイッチング素子７００Ｈのパッド７１は、アイランド６１０よりもＸ方向外側に配置されている。上アーム側のスイッチング素子７０１Ｈは、Ｙ方向においてスイッチング素子７０１Ｌ及び駆動部８０と対向している。スイッチング素子７０１Ｈのパッド７１は、アイランド６１０よりもＸ方向外側に配置されている。 The driving unit 80 is disposed between the lower arm side switching elements 700L and 701H. The switching element 700H on the upper arm side faces the switching element 700L and the drive unit 80 in the Y direction. The pad 71 of the switching element 700H is disposed outside the island 610 in the X direction. The switching element 701H on the upper arm side faces the switching element 701L and the drive unit 80 in the Y direction. The pad 71 of the switching element 701H is disposed outside the island 610 in the X direction.
　（ボンディングワイヤを考慮した配置）
　図２１などに示すように、Ｚ方向からの平面視において、４つのスイッチング素子７０が、駆動部８０の周りに配置されている。これにより、スイッチング素子７０のパッド７１と駆動部８０とを接続するボンディングワイヤ４１の長さを短くすることができる。中継用の配線基板が不要であるので、部品点数を削減し、ひいては半導体モジュール４０の体格を小型化することができる。また、封止樹脂体５０を成形する際に、ボンディングワイヤ４１に断線や接続不良などが生じるのを抑制することができる。長さが短いため、ボンディングワイヤ４１が他の部分に接触するのを抑制することもできる。すなわち、ボンディングワイヤ４１の不良を抑制することができる。また、ボンディングワイヤ４１の配線密度を向上して無駄なスペースを低減し、半導体モジュール４０の体格を小型化することもできる。 (Arrangement considering bonding wire)
As shown in FIG. 21 and the like, the four switching elements 70 are disposed around the drive unit 80 in plan view from the Z direction. Thereby, the length of the bonding wire 41 connecting the pad 71 of the switching element 70 and the drive unit 80 can be shortened. Since the relay wiring board is unnecessary, the number of parts can be reduced, and the physical size of the semiconductor module 40 can be miniaturized. In addition, when molding the sealing resin body 50, it is possible to suppress the occurrence of disconnection, connection failure or the like in the bonding wire 41. Since the length is short, the bonding wire 41 can also be inhibited from contacting other parts. That is, defects in the bonding wire 41 can be suppressed. In addition, the wiring density of the bonding wires 41 can be improved to reduce unnecessary space, and the physical size of the semiconductor module 40 can be miniaturized.
　上記したように駆動部８０が平面略矩形状をなしており、図２１に示すように、駆動部８０のパッド８１がスイッチング素子７０のそれぞれとの対向辺に設けられている。本実施形態では、駆動部８０の連続する３辺に、スイッチング素子７０と接続されるパッド８１が集約されている。これにより、ボンディングワイヤ４１の長さを短くすることができる。したがって、成形時におけるボンディングワイヤ４１の不良を低減できる。また、半導体モジュール４０の体格を小型化することもできる。なお、駆動部８０のうち、残りの１辺には、信号端子６４と接続されるパッド８１のみが配置されている。 As described above, the drive unit 80 has a substantially rectangular planar shape, and as shown in FIG. 21, the pads 81 of the drive unit 80 are provided on the sides facing the switching elements 70 respectively. In the present embodiment, pads 81 connected to the switching element 70 are concentrated on three consecutive sides of the drive unit 80. Thereby, the length of the bonding wire 41 can be shortened. Therefore, defects in the bonding wire 41 at the time of molding can be reduced. In addition, the size of the semiconductor module 40 can be miniaturized. Note that only the pad 81 connected to the signal terminal 64 is disposed on the remaining one side of the drive unit 80.
　スイッチング素子７０は、詳しくは略正方形をなしている。図２１に示すように、パッド７１は、スイッチング素子７０の１つの辺の中央付近に、該辺に沿って並んで配置されている。このように、パッド７１を１つの辺の中央に配置したため、スイッチング素子７０を１種類のチップとして共通化することができる。また、共通化しながらも、９０度配置が異なる上アーム側と下アーム側とで、パッド７１，８１に対してボンディングワイヤ４１を接続することができる。また、ボンディングワイヤ４１の長さを短くすることができる。 The switching element 70 has a substantially square shape in detail. As shown in FIG. 21, the pads 71 are arranged in the vicinity of the center of one side of the switching element 70 along the side. As described above, since the pad 71 is disposed at the center of one side, the switching element 70 can be made common as one type of chip. In addition, the bonding wires 41 can be connected to the pads 71 and 81 on the upper arm side and the lower arm side, which are different in the arrangement by 90 degrees, though being made common. Moreover, the length of the bonding wire 41 can be shortened.
　図２１などに示すように、信号端子６４は、Ｙ方向において、駆動部８０の１辺側にまとめて配置されている。すべての信号端子６４は、駆動部８０に対して、上アーム側のスイッチング素子７００Ｈ，７０１Ｈとは反対側に配置されている。スイッチング素子７０は、駆動部８０の残りの３辺と対向している。これによれば、信号端子６４も含めて、駆動部８０との接続構造を簡素化することができる。よって、ボンディングワイヤ４１の長さを短くし、半導体モジュール４０の体格を小型化することができる。 As shown in FIG. 21 and the like, the signal terminals 64 are collectively arranged on one side of the drive unit 80 in the Y direction. All the signal terminals 64 are arranged on the opposite side of the drive unit 80 to the switching elements 700H and 701H on the upper arm side. The switching element 70 is opposed to the remaining three sides of the drive unit 80. According to this, the connection structure with the drive part 80 can be simplified including the signal terminal 64. Therefore, the length of the bonding wire 41 can be shortened, and the size of the semiconductor module 40 can be reduced.
　（熱を考慮した配置）
　出力端子６３Ｐ１，６３Ｐ２は、出力バスバー２７Ｐ１，２７Ｐ２を介して、回転電機部１０の固定子巻線１２１と接続されるため、回転電機部１０側から熱が伝わる。このため、下アーム側のスイッチング素子が熱の影響を受けやすい。これに対し、本実施形態では、下アーム側のスイッチング素子７００Ｌ，７０１Ｌの間に駆動部８０が配置されている。また、Ｘ方向において、スイッチング素子７００Ｈ，７０１Ｈが線対称配置とされ、スイッチング素子７００Ｌ，７０１Ｌが線対称配置とされている。すなわち、４つのスイッチング素子７０が、ＸＹ面内において均等配置されている。そして、図１６に示すように、上アーム側のスイッチング素子７００Ｈ，７０１Ｈ間の距離をＬ１、下アーム側のスイッチング素子７００Ｌ，７０１Ｌ間の距離をＬ２とすると、距離Ｌ２のほうが距離Ｌ１よりも長くされている。 (Placement considering heat)
The output terminals 63P1 and 63P2 are connected to the stator winding 121 of the rotary electric machine unit 10 via the output bus bars 27P1 and 27P2, so heat is transmitted from the rotary electric machine unit 10 side. Therefore, the switching element on the lower arm side is susceptible to heat. On the other hand, in the present embodiment, the drive unit 80 is disposed between the switching elements 700L and 701L on the lower arm side. Further, in the X direction, the switching elements 700H and 701H are arranged in line symmetry, and the switching elements 700L and 701L are arranged in line symmetry. That is, the four switching elements 70 are equally arranged in the XY plane. Then, as shown in FIG. 16, assuming that the distance between the switching elements 700H and 701H on the upper arm side is L1 and the distance between the switching elements 700L and 701L on the lower arm side is L2, the distance L2 is longer than the distance L1. It is done.
　このような配置により、図２３に示すように、回転電機部１０からのもらい熱によって高温となるスイッチング素子７００Ｌ，７０１Ｌ同士を遠ざけている。これにより、スイッチング素子７００Ｌ，７０１Ｌ間の熱干渉を、スイッチング素子７００Ｈ，７０１Ｈ間の熱干渉よりも低減することができる。したがって、ＸＹ面において局所的な過熱を抑制し、すべてのスイッチング素子７０について熱による性能低下を抑制することができる。図２３では、封止樹脂体５０及びボンディングワイヤ４１の図示を省略している。 With such an arrangement, as shown in FIG. 23, the switching elements 700L and 701L which are heated by heat received from the rotary electric machine 10 are separated from each other. Thereby, the thermal interference between the switching elements 700L and 701L can be reduced more than the thermal interference between the switching elements 700H and 701H. Therefore, local overheating in the XY plane can be suppressed, and performance degradation due to heat can be suppressed for all the switching elements 70. In FIG. 23, the sealing resin body 50 and the bonding wire 41 are not shown.
　上記したように、アイランド６１１～６１４のそれぞれにおいて、スイッチング素子７０の配置面とは反対の放熱面６１１ａ～６１４ａが、封止樹脂体５０から露出されている。したがって、スイッチング素子７０の熱を効果的に放熱することができる。 As described above, in each of the islands 611 to 614, the heat release surfaces 611a to 614a opposite to the arrangement surface of the switching element 70 are exposed from the sealing resin body 50. Therefore, the heat of switching element 70 can be dissipated effectively.
　上記したように、アイランド６１０において、駆動部８０の配置面とは反対の放熱面６１０ａが、封止樹脂体５０から露出されている。これにより、駆動部８０の発生した熱及び駆動部８０の周りに配置されたスイッチング素子７０からのもらい熱を、効果的に放熱することができる。また、放熱性の向上により、駆動部８０を小型化することもできる。 As described above, in the island 610, the heat release surface 610a opposite to the arrangement surface of the drive unit 80 is exposed from the sealing resin body 50. Accordingly, the heat generated by the drive unit 80 and the heat received from the switching element 70 disposed around the drive unit 80 can be effectively dissipated. Moreover, the drive part 80 can also be miniaturized by the improvement of heat dissipation.
　上記したように、スイッチング素子７００Ｌ，７０１Ｌが配置されたアイランド６１２，６１４に連なる配線部６２０，６２２において、スイッチング素子７００Ｌ，７０１Ｌ側の面とは反対の放熱面６２０ａ，６２２ａが、封止樹脂体５０から露出されている。これにより、スイッチング素子７００Ｌ，７０１Ｌの熱を、放熱面６２０ａ，６２２ａから逃がすことができる。すなわち、回転電機部１０からのもらい熱を効果的に放熱することができる。また、スイッチング素子７００Ｈ，７０１Ｈの熱を、クリップ９００を介して放熱面６２０ａ，６２２ａからも逃がすことができる。 As described above, in the wiring portions 620 and 622 connected to the islands 612 and 614 in which the switching elements 700L and 701L are disposed, the heat release surfaces 620a and 622a opposite to the surfaces on the switching elements 700L and 701L side are sealing resin bodies Exposed from 50. Thus, the heat of the switching elements 700L and 701L can be dissipated from the heat radiation surfaces 620a and 622a. That is, it is possible to effectively dissipate heat received from the rotating electrical machine unit 10. In addition, the heat of the switching elements 700H and 701H can be dissipated from the heat dissipation surfaces 620a and 622a via the clip 900.
　（架橋部材）
　架橋部材９０は、２つの配線を架橋する。具体的には、スイッチング素子７０のソース電極７２と、対応する配線部６２とを架橋する。架橋部材９０は、ブリッジとも称される。架橋部材９０は、ソース電極７２と配線部６２を電気的に中継するため、中継部材とも称される。 (Crosslinking member)
The bridging member 90 bridges the two wires. Specifically, the source electrode 72 of the switching element 70 and the corresponding wiring portion 62 are bridged. The bridging member 90 is also referred to as a bridge. The bridge member 90 is also referred to as a relay member because it electrically relays the source electrode 72 and the wiring portion 62.
　架橋部材９０は、ソース電極７２及び配線部６２との接続のために、図１２及び図１３に示すように一対の接続部９１を有している。架橋部材９０は、一方向に延設されている。架橋部材９０は、接続部９１の板厚方向に対して直交する方向に延設されている。接続部９１は、架橋部材９０の延設方向両端に設けられている。接続部９１は、はんだ４２を介して、ソース電極７２及び配線部６２のそれぞれと接続される。 The bridge member 90 has a pair of connection parts 91 as shown in FIGS. 12 and 13 for connection with the source electrode 72 and the wiring part 62. The bridging member 90 is extended in one direction. The bridging member 90 is extended in a direction perpendicular to the thickness direction of the connecting portion 91. The connecting portions 91 are provided at both ends in the extending direction of the bridging member 90. The connection portion 91 is connected to each of the source electrode 72 and the wiring portion 62 through the solder 42.
　架橋部材９０としては、平板状のものを採用することもできるが、本実施形態では凸形状の架橋部材９０を採用している。架橋部材９０は、いずれも一対の接続部９１に加えて、上底部９２と、連結部９３を有している。接続部９１及び上底部９２は板厚方向をＺ方向としており、Ｚ方向において異なる位置に配置されている。連結部９３は接続部９１と上底部９２を連結している。連結部９３は、傾斜部分と傾斜部分の両端に設けられた屈曲部分を有している。上底部９２と、上底部９２の両端に連なる連結部９３とに規定される形状が、ＺＸ面において略台形状をなしている。接続部９１に対して上底部９２が凸とされている。架橋部材９０は、はんだ４２との接続面と反対の面側に凸とされている。 Although a flat-plate-like thing can also be employ | adopted as the bridge | crosslinking member 90, the convex-shaped bridge | crosslinking member 90 is employ | adopted in this embodiment. The bridge member 90 has an upper bottom portion 92 and a connecting portion 93 in addition to the pair of connecting portions 91. The connection portion 91 and the upper bottom portion 92 have a thickness direction as a Z direction, and are disposed at different positions in the Z direction. The connecting portion 93 connects the connecting portion 91 and the upper bottom portion 92. The connecting portion 93 has an inclined portion and bent portions provided at both ends of the inclined portion. The shape defined by the upper bottom portion 92 and the connecting portions 93 connected to both ends of the upper bottom portion 92 has a substantially trapezoidal shape in the ZX plane. The upper bottom portion 92 is convex with respect to the connection portion 91. The bridging member 90 is convex on the side opposite to the connecting surface with the solder 42.
　図１２、図１３、及び図１６などに示すように、架橋部材９０は、電気的に中継するクリップ９００と、電気的な中継に加えて、電流検出にも用いられるシャント抵抗器９０１を有している。架橋部材９０は、４つのスイッチング素子７０に対応して、２つのクリップ９００と２つのシャント抵抗器９０１を有している。 As shown in FIG. 12, FIG. 13, FIG. 16, etc., the bridge member 90 has a clip 900 for relaying electrically and a shunt resistor 901 used for current detection in addition to the relay for electric ing. The bridging member 90 has two clips 900 and two shunt resistors 901 corresponding to the four switching elements 70.
　クリップ９００は、上アーム側のスイッチング素子７００Ｈ，７０１Ｈと対応する配線部６２０，６２２とをそれぞれ接続している。クリップ９００の構成材料としては、たとえばＣｕを用いることができる。本実施形態では、Ｃｕの表面にＮｉめっきが施されている。 The clip 900 connects the switching elements 700H and 701H on the upper arm side and the corresponding wiring parts 620 and 622, respectively. As a constituent material of the clip 900, for example, Cu can be used. In the present embodiment, the surface of Cu is plated with Ni.
　シャント抵抗器９０１において、はんだ４２の接続面とは反対の面に、一対のボンディングワイヤ４１が接続される。このボンディングワイヤ４１により、電圧降下が検出されて、２つの配線間に流れる電流の電流値が検出される。シャント抵抗器９０１は、下アーム側のスイッチング素子７００Ｌ，７０１Ｌと対応する配線部６２１，６２３とをそれぞれ接続している。シャント抵抗器９０１の検出値は、ボンディングワイヤ４１及び信号端子６４を介して、制御回路部２６に出力される。 In the shunt resistor 901, a pair of bonding wires 41 is connected to the surface opposite to the connection surface of the solder 42. The voltage drop is detected by the bonding wire 41, and the current value of the current flowing between the two wires is detected. The shunt resistor 901 connects the switching elements 700L and 701L on the lower arm side to the corresponding wiring parts 621 and 623, respectively. The detected value of the shunt resistor 901 is output to the control circuit unit 26 via the bonding wire 41 and the signal terminal 64.
　図１６及び図２１などに示すように、クリップ９００及びシャント抵抗器９０１は、いずれも、延設方向がＸ方向、幅方向がＹ方向となるように、それぞれ配置されている。 As shown in FIG. 16 and FIG. 21 etc., the clip 900 and the shunt resistor 901 are each arranged such that the extending direction is the X direction and the width direction is the Y direction.
　（シャント抵抗器詳細）
　図２４及び図２５に示すように、シャント抵抗器９０１は、抵抗体９０１ａと、一対の電極９０１ｂと、接合部９０１ｃと、目印９０１ｄを備えている。シャント抵抗器９０１は、電流検出用のボンディングワイヤ４１が接続される上面９０１ｅと、はんだ４２が接続される下面９０１ｆを有している。 (Shunt resistor details)
As shown in FIGS. 24 and 25, the shunt resistor 901 includes a resistor 901a, a pair of electrodes 901b, a joint 901c, and a mark 901d. The shunt resistor 901 has an upper surface 901 e to which the bonding wire 41 for current detection is connected, and a lower surface 901 f to which the solder 42 is connected.
　抵抗体９０１ａは、電流を検出するために、予め抵抗率が設定されている。抵抗体９０１ａとして、たとえばＣｕＭｎＮｉを用いることができる。本実施形態では、抵抗体９０１ａが平板状をなしている。抵抗体９０１ａは、平面略矩形状をなしている。 The resistor 901a has a resistivity set in advance to detect a current. For example, CuMnNi can be used as the resistor 901 a. In the present embodiment, the resistor 901a has a flat plate shape. The resistor 901a has a substantially rectangular planar shape.
　一対の電極９０１ｂは、抵抗体９０１ａを挟むように配置されている。一対の電極９０１ｂの間に、抵抗体９０１ａが配置されている。電極９０１ｂは、抵抗体９０１ａの板厚方向に直交する一方向において、抵抗体９０１ａの両端にそれぞれ配置されている。電極９０１ｂとして、抵抗体９０１ａよりも抵抗率の小さい金属、たとえばＣｕを用いることができる。本実施形態では、Ｃｕの表面にＮｉめっきが施されている。 The pair of electrodes 901b is disposed to sandwich the resistor 901a. A resistor 901a is disposed between the pair of electrodes 901b. The electrodes 901b are respectively disposed at both ends of the resistor 901a in one direction orthogonal to the thickness direction of the resistor 901a. As the electrode 901b, a metal having a resistivity smaller than that of the resistor 901a, for example, Cu can be used. In the present embodiment, the surface of Cu is plated with Ni.
　電極９０１ｂは、ＺＸ面において略クランク形状をなしている。電極９０１ｂは、２つの屈曲部をそれぞれ有している。電極９０１ｂが、上記した接続部９１のすべて、連結部９３のすべて、及び上底部９２の一部をなしている。抵抗体９０１ａは、クランク形状の電極９０１ｂにより、Ｚ方向において接続部９１から離れた位置に支持されている。一対の電極９０１ｂは、抵抗体９０１ａを支持する一対の脚部である。 The electrode 901 b has a substantially crank shape in the ZX plane. The electrode 901 b has two bends respectively. The electrode 901 b forms all of the connection portion 91 described above, all of the connection portion 93, and a part of the upper bottom portion 92. The resistor 901a is supported at a position away from the connection portion 91 in the Z direction by the crank-shaped electrode 901b. The pair of electrodes 901 b is a pair of legs supporting the resistor 901 a.
　接合部９０１ｃは、抵抗体９０１ａと電極９０１ｂのそれぞれとの接合領域である。接合部９０１ｃは、抵抗体９０１ａと電極９０１ｂとの界面に形成されている。接合部９０１ｃは、抵抗体９０１ａと電極９０１ｂとを溶接することで形成されている。このため、接合部９０１ｃは、溶接ビード領域とも称される。 The bonding portion 901 c is a bonding region between the resistor 901 a and the electrode 901 b. The bonding portion 901c is formed at the interface between the resistor 901a and the electrode 901b. The joint portion 901c is formed by welding the resistor 901a and the electrode 901b. For this reason, the joint portion 901c is also referred to as a weld bead area.
　ここで、接合部９０１ｃにおいて、抵抗体９０１ａと電極９０１ｂとの並び方向における長さを幅とすると、図２５に示すように、上面９０１ｅ側の幅Ｗ１のほうが、下面９０１ｆ側の幅Ｗ２よりも狭くされている。幅Ｗ１は、たとえば０．６ｍｍ以下とされている。接合部９０１ｃの幅は、下面９０１ｆで最大とされ、上面９０１ｅで最小とされ、且つ、下面９０１ｆから上面９０１ｅに向けて徐々に狭くされている。 Here, assuming that the length in the alignment direction of the resistor 901a and the electrode 901b in the bonding portion 901c is a width, the width W1 on the upper surface 901e is greater than the width W2 on the lower surface 901f, as shown in FIG. It is narrowed. The width W1 is, for example, 0.6 mm or less. The width of the joint portion 901c is maximized at the lower surface 901f, minimized at the upper surface 901e, and gradually narrowed from the lower surface 901f toward the upper surface 901e.
　目印９０１ｄは、電流検出用の一対のボンディングワイヤ４１の接続位置の基準となる。本実施形態では、図２５に示すように、電極９０１ｂそれぞれの接合部８１１の近傍に形成されている。目印９０１ｄは、プレス加工、印刷、レーザ照射などにより形成することができる。本実施形態では、一対の目印９０１ｄが、幅方向の中心を跨ぐように、中心から等距離の位置に設けられている。これにより、一対の目印９０１ｄを基準にし、目印のない幅方向中心にボンディングワイヤ４１を接続することができる。これにより、ボンディング性を向上することができる。 The mark 901 d is a reference of the connection position of the pair of bonding wires 41 for current detection. In the present embodiment, as shown in FIG. 25, the electrodes 901 b are formed in the vicinity of the bonding portions 811. The mark 901 d can be formed by press processing, printing, laser irradiation, or the like. In the present embodiment, a pair of marks 901 d are provided at equal distances from the center so as to straddle the center in the width direction. Thereby, the bonding wire 41 can be connected to the center in the width direction without a mark based on the pair of marks 901d. Thereby, the bondability can be improved.
　次に、上記したシャント抵抗器９０１の製造方法について説明する。 Next, a method of manufacturing the above-described shunt resistor 901 will be described.
　先ず、抵抗体９０１ａのロール材と、電極９０１ｂのロール材を２つ準備し、一対の電極９０１ｂの間に抵抗体９０１ａを配置する。そして、電極９０１ｂのそれぞれと抵抗体９０１ａとを接触させた状態で、下面９０１ｆ側からビーム、たとえば電子ビームを照射し、電極９０１ｂのそれぞれと抵抗体９０１ａとを溶接する。これにより、一方の電極９０１ｂと抵抗体９０１ａとの界面、他方の電極９０１ｂと抵抗体９０１ａとの界面に、接合部９０１ｃがそれぞれ形成される。 First, two roll materials of the resistor 901a and the electrode 901b are prepared, and the resistor 901a is disposed between the pair of electrodes 901b. Then, in a state where each of the electrodes 901b is in contact with the resistor 901a, a beam such as an electron beam is irradiated from the lower surface 901f side to weld each of the electrodes 901b with the resistor 901a. Thus, the bonding portion 901c is formed at the interface between the one electrode 901b and the resistor 901a and at the interface between the other electrode 901b and the resistor 901a.
　下面９０１ｆ側からビームを照射するため、接合部９０１ｃの幅は、下面９０１ｆで最大となり、下面９０１ｆから上面９０１ｅに向けて徐々に狭くなる。溶接により、抵抗体９０１ａと電極９０１ｂが一体化する。 In order to irradiate a beam from the lower surface 901f side, the width of the bonding portion 901c becomes maximum at the lower surface 901f and gradually narrows from the lower surface 901f to the upper surface 901e. By welding, the resistor 901a and the electrode 901b are integrated.
　次いで、ロール材からの打ち抜き、電極９０１ｂのＮｉめっき、電極９０１ｂの曲げ加工などを経て、シャント抵抗器９０１を得ることができる。 Then, the shunt resistor 901 can be obtained through punching from a roll material, Ni plating of the electrode 901b, bending of the electrode 901b, and the like.
　ところで、電極９０１ｂは、抵抗体９０１ａよりも抵抗率の小さい金属、たとえばＣｕを用いて形成されている。また、接合部９０１ｃにも、このＣｕが含まれている。Ｃｕは、抵抗体９０１ａを構成する金属に較べてＴＣＲ（抵抗温度係数）が高い。このため、電流検出精度を向上するためには、抵抗体９０１ａの端部近傍にボンディングワイヤ４１を接続し、ボンディングワイヤ４１間のＣｕをできるだけ少なくするのが好ましい。すなわち、ボンディングワイヤ４１の間に存在する電極９０１ｂ及び接合部９０１ｃをできるだけ小さくするのが好ましい。 The electrode 901 b is formed of a metal having a resistivity smaller than that of the resistor 901 a, for example, Cu. The Cu is also contained in the bonding portion 901c. Cu has a high TCR (temperature coefficient of resistance) compared to the metal constituting the resistor 901 a. Therefore, in order to improve the current detection accuracy, it is preferable to connect the bonding wire 41 in the vicinity of the end of the resistor 901 a and to reduce Cu between the bonding wires 41 as much as possible. That is, it is preferable to make the electrode 901 b and the bonding portion 901 c existing between the bonding wires 41 as small as possible.
　しかしながら、ビーム溶接される構成において、接合部の表面及びその周囲は、スパッタやヒュームなどによって汚染されている。また、接合部の表面及びその周囲は、荒れている。このため、ボンダビリティ性を確保するためには、接合部に対して所定のギャップを設け、ボンディングワイヤを接続しなければならない。 However, in the beam-welded configuration, the surface of the joint and its periphery are contaminated by spatter, fumes and the like. Also, the surface of the joint and its surroundings are rough. For this reason, in order to ensure bondability, it is necessary to provide a predetermined gap to the joint and connect the bonding wire.
　特に、接合部９０１ｃの幅は、ビーム照射面においてビームの非照射面よりも広くなる。ビームの照射面のほうが、接合部９０１ｃの表面及びその周囲において、スパッタやヒュームなどの影響が大きい。また、ビームの照射面のほうが、接合部９０１ｃ及びその周囲において荒れた部分が大きくなる。すなわち、面粗度の大きい部分が広くなる。このため、ビーム照射面とボンディング面が一致する場合、ギャップを大きくしなければならない。 In particular, the width of the bonding portion 901c is wider at the beam irradiation surface than at the non-irradiation surface of the beam. The beam irradiation surface has a greater effect of sputtering, fumes, etc. on the surface of the bonding portion 901c and its periphery. In addition, the irradiated surface of the beam is larger in the rough portion in the bonding portion 901c and the periphery thereof. That is, the portion with a large surface roughness becomes wide. Therefore, when the beam irradiation surface and the bonding surface coincide with each other, the gap must be increased.
　これに対し、本実施形態では、接合部９０１ｃにおいて、上面９０１ｅ側の幅Ｗ１のほうが下面９０１ｆ側の幅Ｗ２よりも狭くされている。したがって、接合部９０１ｃに対して所定のギャップを設けたとしても、抵抗体９０１ａの端部の近くに、ボンディングワイヤ４１を接続することができる。 On the other hand, in the present embodiment, in the bonding portion 901c, the width W1 on the upper surface 901e side is smaller than the width W2 on the lower surface 901f side. Therefore, even if a predetermined gap is provided for the bonding portion 901c, the bonding wire 41 can be connected near the end of the resistor 901a.
　また、下面９０１ｆ側からビームを照射することで、Ｗ１＜Ｗ２の構成が実現されている。上面９０１ｅは、ビームの照射面ではないため、下面９０１ｆに較べてスパッタやヒュームの影響を低減できる。また、面粗度の大きい部分を小さくすることができる。これにより、接合部９０１ｃに対するギャップを小さくすることができる。 In addition, the configuration of W1 <W2 is realized by irradiating the beam from the lower surface 901f side. The upper surface 901 e is not a beam irradiation surface, and therefore the influence of sputtering and fumes can be reduced as compared to the lower surface 901 f. In addition, the portion with large surface roughness can be made smaller. Thereby, the gap with respect to the bonding portion 901c can be reduced.
　以上により、抵抗体９０１ａの端部により近づけて、ボンディングワイヤ４１を接続することができる。すなわち、電流の検出精度を向上することができる。シャント抵抗器９０１とボンディングワイヤ４１を備える電流検出装置において、電流の検出精度を向上することができる。また、搬送時の吸着面である上面９０１ｅにおいて、接合部９０１ｃを含む面粗度の大きい部分が小さいため、シャント抵抗器９０１を吸着搬送しやすい。 As described above, the bonding wire 41 can be connected closer to the end of the resistor 901 a. That is, the detection accuracy of the current can be improved. In the current detection device including the shunt resistor 901 and the bonding wire 41, the detection accuracy of the current can be improved. Further, in the upper surface 901e, which is the suction surface at the time of transportation, the portion having a large surface roughness including the bonding portion 901c is small, so the shunt resistor 901 can be easily suctioned and transported.
　特に本実施形態では、上面９０１ｅに目印９０１ｄが形成されている。したがって、目印９０１ｄを位置基準として、ボンディングワイヤ４１を所定位置に精度良く接続することができる。これにより、ボンディング位置のばらつきを低減し、電流検出精度をさらに高めることができる。なお、目印９０１ｄを有さない構成を採用することもできる。 Particularly in the present embodiment, the mark 901 d is formed on the upper surface 901 e. Therefore, the bonding wire 41 can be accurately connected to the predetermined position using the mark 901 d as a position reference. Thereby, the variation in bonding position can be reduced, and the current detection accuracy can be further enhanced. In addition, the structure which does not have the mark 901d is also employable.
　本実施形態では、一対のボンディングワイヤ４１を、電極９０１ｂに接続する例を示したが、これに限定されない。図２６に示す変形例のように、抵抗体９０１ａに、一対のボンディングワイヤ４１のそれぞれを接続してもよい。上記したように、ビームの非照射面である上面９０１ｅは、下面９０１ｆに較べてスパッタやヒュームの影響を低減できる。したがって、ボンディングワイヤ４１を抵抗体９０１ａにおける端部付近、詳しくは、接合部９０１ｃの近くに接続することができる。これにより、ボンディングワイヤ４１を抵抗体９０１ａに接続しつつ、検出電圧域（ダイナミックレンジ）の減少を抑制することができる。また、ＴＣＲの影響を無くし、これにより電流検出精度を向上することができる。 Although the example which connects a pair of bonding wires 41 to electrode 901b was shown in this embodiment, it is not limited to this. As in the modification shown in FIG. 26, each of the pair of bonding wires 41 may be connected to the resistor 901a. As described above, the upper surface 901e, which is the non-irradiated surface of the beam, can reduce the effects of sputtering and fumes as compared to the lower surface 901f. Therefore, the bonding wire 41 can be connected near the end of the resistor 901a, more specifically, near the bonding portion 901c. As a result, while the bonding wire 41 is connected to the resistor 901a, it is possible to suppress a decrease in the detection voltage range (dynamic range). In addition, the influence of the TCR can be eliminated, whereby the current detection accuracy can be improved.
　図２７に示す変形例のように、一方のボンディングワイヤ４１を電極９０１ｂに接続し、他方のボンディングワイヤ４１を抵抗体９０１ａに接続してもよい。 As in the modification shown in FIG. 27, one bonding wire 41 may be connected to the electrode 901b, and the other bonding wire 41 may be connected to the resistor 901a.
　図１６に示すように、シャント抵抗器９０１の接続部９１の幅は、スイッチング素子７０のソース電極７２の幅よりも短くされている。ソース電極７２の幅を、シャント抵抗器９０１の接続部９１の幅以上となるようにすると、スイッチング素子７０のチップサイズが変わっても、シャント抵抗器９０１において接続部９１の幅の変更で対応することができる。すなわち、抵抗体９０１ａ、接合部９０１ｃ、及び電極９０１ｂの一部を含む上底部９２については変更しなくてよい。したがって、シャント抵抗器９０１の設計を共通化することができる。 As shown in FIG. 16, the width of the connection portion 91 of the shunt resistor 901 is shorter than the width of the source electrode 72 of the switching element 70. If the width of the source electrode 72 is equal to or larger than the width of the connection portion 91 of the shunt resistor 901, the change in the width of the connection portion 91 in the shunt resistor 901 can be taken even if the chip size of the switching element 70 changes. be able to. That is, the upper bottom 92 including the resistor 901a, the joint 901c, and part of the electrode 901b may not be changed. Therefore, the design of shunt resistor 901 can be made common.
　上記したように、抵抗体９０１ａと電極９０１ｂが接合された低抵抗のシャント抵抗器９０１では、一般的に検出電圧が小さいため、ボンディングワイヤ４１間のＥＳＬ（等価直列インダクタンス）の影響により、検出精度が低下する虞がある。ＥＳＬは、自己インダクタンスと相互インダクタンスの和で示され、自己インダクタンスはシャント抵抗器９０１の形状で決定される。図２８は、たとえば出力端子６３Ｐ１から、スイッチング素子７００Ｌ、シャント抵抗器９０１、及び配線部６２１を介して負極端子６３Ｅ１に電流が流れる場合を示している。破線矢印は、スイッチング素子７００Ｌのドレイン電極に向けて流れる電流、実線矢印は、スイッチング素子７００Ｌのソース電極７２から負極端子６３Ｅ１に向けて流れる電流を示している。 As described above, in the low resistance shunt resistor 901 in which the resistor 901a and the electrode 901b are joined, the detection accuracy is generally small, and therefore, the detection accuracy is affected by the ESL (equivalent series inductance) between the bonding wires 41. May be reduced. ESL is indicated by the sum of the self inductance and the mutual inductance, and the self inductance is determined by the shape of the shunt resistor 901. FIG. 28 shows, for example, a case where a current flows from the output terminal 63P1 to the negative electrode terminal 63E1 via the switching element 700L, the shunt resistor 901, and the wiring portion 621. The broken line arrow indicates the current flowing toward the drain electrode of the switching element 700L, and the solid line arrow indicates the current flowing from the source electrode 72 of the switching element 700L toward the negative electrode terminal 63E1.
　上記したように、シャント抵抗器９０１の延設方向がＸ方向となるように、シャント抵抗器９０１が配置されている。また、出力端子６３Ｐ１は、アイランド６１２に対して、斜め方向に外側へ引き出され、その先でＹ方向に延設されている。この配置により、図２８に示すように、シャント抵抗器９０１に流れる電流が、出力端子６３Ｐ１の斜め延設部分に流れる電流に対して、逆向きの成分を有することとなる。したがって、シャント抵抗器９０１の相互インダクタンス、ひいてはＥＳＬを低減し、これにより検出精度を高めることができる。本実施形態では、配線構造の複雑化、すなわち半導体モジュール４０の大型化を抑制しつつ、ＥＳＬを低減することができる。 As described above, the shunt resistor 901 is disposed such that the extending direction of the shunt resistor 901 is the X direction. Further, the output terminal 63P1 is drawn outward with respect to the island 612 in an oblique direction, and is extended in the Y direction at the end of the output terminal 63P1. By this arrangement, as shown in FIG. 28, the current flowing through the shunt resistor 901 has a component in the opposite direction to the current flowing through the obliquely extended portion of the output terminal 63P1. Therefore, the mutual inductance of the shunt resistors 901 and hence the ESL can be reduced, thereby enhancing the detection accuracy. In the present embodiment, the ESL can be reduced while suppressing the complication of the wiring structure, that is, the increase in size of the semiconductor module 40.
　（放射ノイズを考慮した配置）
　任意の上下アームにおける上アーム側のスイッチング素子７０と、別の上下アームにおける下アーム側のスイッチング素子７０が同時にオンされることで、バスバー２７や回転電機部１０（固定子巻線１２１）を含めた電流ループが形成される。本実施形態では、半導体モジュール４０内に二相分の上下アームを集約しているため、半導体モジュール内に一相分の上下アームを備える構成に較べて、電流ループを小さくすることができる。これにより、放射ノイズを低減することができる。 (Arrangement considering radiation noise)
By simultaneously turning on the switching element 70 on the upper arm side in any upper and lower arms and the switching element 70 on the lower arm side in other upper and lower arms, the bus bar 27 and the rotating electrical machine unit 10 (the stator winding 121) are included. A current loop is formed. In the present embodiment, since the upper and lower arms for two phases are integrated in the semiconductor module 40, the current loop can be made smaller compared to the configuration having the upper and lower arms for one phase in the semiconductor module. This can reduce the radiation noise.
　図２９では、封止樹脂体５０及びボンディングワイヤ４１を省略している。図２９に示す破線矢印は、スイッチング素子７００Ｈ，７０１Ｌがオンされるとともに、スイッチング素子７００Ｌ，７０１Ｈがオフされたタイミングにおける電流経路を示している。 In FIG. 29, the sealing resin body 50 and the bonding wire 41 are omitted. The broken line arrows shown in FIG. 29 indicate the current paths at the timing when the switching elements 700H and 701L are turned on and the switching elements 700L and 701H are turned off.
　このタイミングでは、正極端子６３Ｂ１から、アイランド６１１、スイッチング素子７００Ｈ、クリップ９００、配線部６２０、アイランド６１２、及び出力端子６３Ｐ１を介して、回転電機部１０、たとえばＸ相の固定子巻線１２１ａに電流が流れる。そして、回転電機部１０のＹ相の固定子巻線１２１ａから、出力端子６３Ｐ２、アイランド６１４、スイッチング素子７０１Ｌ、シャント抵抗器９０１、及び配線部６２３を介して、負極端子６３Ｅ２に電流が流れる。 At this timing, current flows from the positive electrode terminal 63B1 to the rotating electrical machine unit 10, for example, the X-phase stator winding 121a through the island 611, the switching element 700H, the clip 900, the wiring portion 620, the island 612, and the output terminal 63P1. Flows. Then, current flows from the Y-phase stator winding 121a of the rotating electrical machine unit 10 to the negative electrode terminal 63E2 through the output terminal 63P2, the island 614, the switching element 701L, the shunt resistor 901, and the wiring portion 623.
　第１の上下アームを構成するスイッチング素子７００Ｈ，７００Ｌ、正極端子６３Ｂ１、負極端子６３Ｅ１、及び出力端子６３Ｐ１は、アイランド６１１，６１２と、配線部６２０，６２１と、クリップ９００と、シャント抵抗器９０１により構成される配線Ｓ１によって、相互に接続されている。配線Ｓ１により、スイッチング素子７００Ｈ，７００Ｌはバッテリ間において直列に接続される。第２の上下アームを構成するスイッチング素子７０１Ｈ，７０１Ｌ、正極端子６３Ｂ２、負極端子６３Ｅ２、及び出力端子６３Ｐ２は、アイランド６１３，６１４と、配線部６２２，６２３と、クリップ９００と、シャント抵抗器９０１により構成される配線Ｓ２によって、相互に接続されている。配線Ｓ２により、バッテリ間においてスイッチング素子７０１Ｈ，７０１Ｌが直列に接続される。 The switching elements 700H and 700L constituting the first upper and lower arms, the positive electrode terminal 63B1, the negative electrode terminal 63E1, and the output terminal 63P1 are formed by the islands 611 and 612, the wiring portions 620 and 621, the clip 900, and the shunt resistor 901 The lines S1 are connected to each other. The switching elements 700H and 700L are connected in series between the batteries by the wiring S1. The switching elements 701H and 701L constituting the second upper and lower arms, the positive electrode terminal 63B2, the negative electrode terminal 63E2, and the output terminal 63P2 are formed by the islands 613 and 614, the wiring portions 622 and 623, the clip 900, and the shunt resistor 901. The interconnections S2 are connected to each other. The switching elements 701H and 701L are connected in series between the batteries by the wiring S2.
　本実施形態では、図２９に示すように、配線Ｓ１，Ｓ２により挟まれる領域に、配線Ｓ１，Ｓ２とは異なり、封止樹脂体５０よりも透磁率の高い導電部材が配置されている。具体的には、導電部材として、駆動部８０のアイランド６１０が配置されている。導電部材には、電流ループによって渦電流が生じる。渦電流により生じる磁界は、バスバー２７や回転電機部１０も含めた電流ループにより生じる磁界を妨げる向きに生じる。これにより、放射ノイズを効果的に低減することができる。図２９において、アイランド６１１，６１３上に示す磁界の向きが電流ループによるものであり、導電部材（アイランド６１０）上に示す磁界の向きが渦電流によるものである。 In the present embodiment, as shown in FIG. 29, a conductive member having a permeability higher than that of the sealing resin body 50 is disposed in a region sandwiched by the wires S1 and S2, unlike the wires S1 and S2. Specifically, the island 610 of the drive unit 80 is disposed as a conductive member. An eddy current is generated in the conductive member by the current loop. The magnetic field generated by the eddy current is generated in the direction that prevents the magnetic field generated by the current loop including the bus bar 27 and the rotating electrical machine unit 10. Thereby, radiation noise can be effectively reduced. In FIG. 29, the direction of the magnetic field shown on the islands 611 and 613 is due to the current loop, and the direction of the magnetic field shown on the conductive member (island 610) is due to the eddy current.
　なお、配線Ｓ１，Ｓ２により挟まれる領域にアイランド６１０を配置可能であれば、主端子６３の配置は特に限定されない。本実施形態では、封止樹脂体５０の側面５０ｃから正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２が突出し、反対の側面５０ｄから出力端子６３Ｐ１，６３Ｐ２が突出している。これにより、Ｘ方向において、配線Ｓ１，Ｓ２の間にアイランド６１０が配置されている。したがって、渦電流により電流ループの磁界を打ち消す効果を高めることができる。また、バスバー２７との接続構造を簡素化することができる。 Note that the arrangement of the main terminals 63 is not particularly limited as long as the island 610 can be arranged in the region sandwiched by the wirings S1 and S2. In the present embodiment, the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 protrude from the side surface 50c of the sealing resin body 50, and the output terminals 63P1 and 63P2 protrude from the opposite side surface 50d. Thereby, the island 610 is disposed between the wirings S1 and S2 in the X direction. Therefore, the effect of canceling the magnetic field of the current loop can be enhanced by the eddy current. Further, the connection structure with the bus bar 27 can be simplified.
　また、導電部材として、駆動部８０が配置されるアイランド６１０を用いている。これにより、アイランド６１０とは他の導電部材を用いる構成に較べて、構成を簡素化し、半導体モジュール４０の体格を小型化することができる。 Moreover, the island 610 in which the drive part 80 is arrange | positioned is used as a conductive member. Thus, the configuration can be simplified and the size of the semiconductor module 40 can be reduced as compared with the configuration using another conductive member with the island 610.
　アイランド６１０には、上記したようにグランド電位の信号端子６４０が連なっており、導電部材であるアイランド６１０が接地されている。これにより、アイランド６１０の電位変動を抑制することができる。そして、電界成分を抑制し、放射ノイズをさらに低減することができる。 As described above, the signal terminal 640 of the ground potential is connected to the island 610, and the island 610, which is a conductive member, is grounded. Thereby, the potential fluctuation of the island 610 can be suppressed. And an electric field component can be suppressed and radiation noise can be reduced further.
　導電部材としてアイランド６１０の例を示したが、これに限定されない。封止樹脂体５０よりも透磁率の高い導電部材であれば採用できる。 Although the example of the island 610 is shown as a conductive member, it is not limited to this. Any conductive member having higher permeability than the sealing resin body 50 can be employed.
　（タイバーカット前のリードフレーム）
　図２１に示すように、タイバーカット前のリードフレーム６０は、上記したアイランド６１、配線部６２、主端子６３、信号端子６４、及びダミー端子６５に加えて、タイバー６６と、外枠６７と、連結部６８を有している。外枠６７は、ＸＹ面において、略矩形環状をなしており、リードフレーム６０を位置決めするための貫通孔が複数設けられている。 (Lead frame before tie bar cut)
As shown in FIG. 21, the lead frame 60 before the tie bar cut includes the tie bar 66, the outer frame 67, in addition to the island 61, the wiring portion 62, the main terminal 63, the signal terminal 64, and the dummy terminal 65 described above. A connecting portion 68 is provided. The outer frame 67 has a substantially rectangular ring shape in the XY plane, and a plurality of through holes for positioning the lead frame 60 are provided.
　タイバー６６は、Ｙ方向における正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２側において、アイランド６１に近い１段目のタイバー６６０ａと、タイバー６６０ａよりもアイランド６１から離れた位置に設けられた２段目のタイバー６６０ｂを有している。タイバー６６は、出力端子６３Ｐ１，６３Ｐ２及び信号端子６４側において、アイランド６１に近い１段目のタイバー６６１ａと、タイバー６６１ａよりもアイランド６１から離れた位置に設けられた２段目のタイバー６６１ｂを有している。タイバー６６のそれぞれは、Ｘ方向両端で外枠６７に連結されている。 The tie bar 66 is provided on the side of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 in the Y direction, the first stage tie bar 660a near the island 61 and the second stage provided at a position farther from the island 61 than the tie bar 660a. Tie bar 660b. The tie bar 66 has a first stage tie bar 661a near the island 61 and a second stage tie bar 661b provided at a position farther from the island 61 than the tie bar 661 on the output terminals 63P1 and 63P2 and the signal terminal 64 side. doing. Each of the tie bars 66 is connected to the outer frame 67 at both ends in the X direction.
　タイバー６６０ａは、正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２を外枠６７に連結している。タイバー６６０ａは、正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２のそれぞれに対し、幅狭部６３ａよりもアイランド６１に近い位置で連結されている。タイバー６６０ａは、Ｘ方向に沿って一直線状に延設されている。架橋部材９０であるクリップ９００が配置されるアイランド６１１，６１３及び配線部６２０，６２２のうち、アイランド６１１，６１３は、対応する正極端子６３Ｂ１，６３Ｂ２及びダミー端子６５によってタイバー６６０ａに連結されている。配線部６２０，６２２は、ダミー端子６５によってタイバー６６０ａに連結されている。 The tie bar 660a connects the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 to the outer frame 67. The tie bar 660a is connected to each of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 at a position closer to the island 61 than the narrow portion 63a. The tie bars 660 a extend in a straight line along the X direction. Of the islands 611 and 613 and the wiring portions 620 and 622 in which the clip 900 which is the bridging member 90 is disposed, the islands 611 and 613 are connected to the tie bar 660a by corresponding positive terminals 63B1 and 63B2 and dummy terminals 65. The wiring portions 620 and 622 are connected to the tie bar 660 a by the dummy terminals 65.
　タイバー６６０ｂは、正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２のそれぞれに対し、幅狭部６３ａよりもアイランド６１から離れた位置であって、バスバー２７との接続部よりも近い位置で連結されている。タイバー６６０ｂは、幅狭部６３ａに隣接する幅広部の端部に連結されている。正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２は、アイランド６１１，６１３及び配線部６２１，６２３からの延設の始点が互いに同じ位置とされている。一方、延設の終点、すなわち先端位置は正極端子６３Ｂ１，６３Ｂ２と負極端子６３Ｅ１，６３Ｅ２とで異なっており、正極端子６３Ｂ１，６３Ｂ２のほうが負極端子６３Ｅ１，６３Ｅ２よりも延設長さが短くされている。このため、タイバー６６０ａは、Ｘ方向に延設された部分と、Ｙ方向に延設された部分を有している。正極端子６３Ｂ１，６３Ｂ２に連結された部分は、負極端子６３Ｅ１，６３Ｅ２に連結された部分よりも、Ｙ方向においてアイランド６１に近い位置とされている。正極端子６３Ｂ１と負極端子６３Ｅ１との間、正極端子６３Ｂ２と負極端子６３Ｅ２との間に、Ｙ方向の延設部分がそれぞれ配置されている。 The tie bar 660b is connected to each of the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 at a position farther from the island 61 than the narrow portion 63a and closer to the connection portion with the bus bar 27 There is. The tie bar 660b is connected to the end of the wide portion adjacent to the narrow portion 63a. The positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2 are located at the same positions as the start points of extension from the islands 611 and 613 and the wiring portions 621 and 623, respectively. On the other hand, the end point of the extension, that is, the tip position is different between the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2, and the positive electrode terminals 63B1 and 63B2 have a shorter extension length than the negative electrodes 63E1 and 63E2. There is. For this reason, the tie bar 660a has a portion extending in the X direction and a portion extending in the Y direction. The portions connected to the positive electrode terminals 63B1 and 63B2 are closer to the island 61 in the Y direction than the portions connected to the negative electrode terminals 63E1 and 63E2. An extending portion in the Y direction is disposed between the positive electrode terminal 63B1 and the negative electrode terminal 63E1, and between the positive electrode terminal 63B2 and the negative electrode terminal 63E2.
　タイバー６６０ａ，６６０ｂは、連結部６８により、Ｙ方向においても外枠６７に連結されている。連結部６８は、タイバー６６０ａ及びタイバー６６０ｂに対して、アイランド６１１に連結された正極端子６３Ｂ１及びダミー端子６５の間の位置で連結されている。別の連結部６８は、アイランド６１３に連結された正極端子６３Ｂ２及びダミー端子６５の間の位置で連結されている。正極端子６３Ｂ１，６３Ｂ２の間に２本の連結部６８が配置されている。 The tie bars 660a and 660b are connected to the outer frame 67 also in the Y direction by the connecting portion 68. The connecting portion 68 is connected to the tie bar 660 a and the tie bar 660 b at a position between the positive electrode terminal 63 B 1 and the dummy terminal 65 connected to the island 611. Another connecting portion 68 is connected at a position between the positive electrode terminal 63B2 connected to the island 613 and the dummy terminal 65. Two connecting portions 68 are disposed between the positive electrode terminals 63B1 and 63B2.
　別の連結部６８は、タイバー６６０ａ及びタイバー６６０ｂに対して、正極端子６３Ｂ１と配線部６２０に連なるダミー端子６５との間の位置で連結されている。別の連結部６８は、タイバー６６０ａ及びタイバー６６０ｂに対して、正極端子６３Ｂ２と配線部６２２に連なるダミー端子６５との間の位置で連結されている。これら連結部６８は、いずれもＹ方向に延設されており、一端がタイバー６６０ａに連結され、他端が外枠６７に連結されている。 Another connecting portion 68 is connected to the tie bar 660 a and the tie bar 660 b at a position between the positive electrode terminal 63 B 1 and the dummy terminal 65 connected to the wiring portion 620. Another connecting portion 68 is connected to the tie bar 660 a and the tie bar 660 b at a position between the positive electrode terminal 63 B 2 and the dummy terminal 65 connected to the wiring portion 622. Each of the connecting portions 68 extends in the Y direction, one end thereof is connected to the tie bar 660 a, and the other end is connected to the outer frame 67.
　タイバー６６１ａは、出力端子６３Ｐ１，６３Ｐ２及び信号端子６４を外枠６７に連結している。タイバー６６１ａは、Ｘ方向に沿って一直線状に延設されている。タイバー６６１ａは、出力端子６３Ｐ１，６３Ｐ２の幅狭部６３ａ及び信号端子６４のクランク部６４ａよりもアイランド６１に近い位置に連結されている。架橋部材９０であるシャント抵抗器９０１が配置されるアイランド６１２，６１４及び配線部６２１，６２３のうち、アイランド６１２，６１４は、対応する出力端子６３Ｐ１，６３Ｐ２及び信号端子６４１によってタイバー６６１ａに連結されている。配線部６２２，６２３は、ダミー端子６５によってタイバー６６１ａに連結されている。 The tie bar 661a connects the output terminals 63P1 and 63P2 and the signal terminal 64 to the outer frame 67. The tie bars 661a extend in a straight line along the X direction. The tie bar 661a is connected to a position closer to the island 61 than the narrow portion 63a of the output terminals 63P1 and 63P2 and the crank portion 64a of the signal terminal 64. Of the islands 612 and 614 and the wiring portions 621 and 623 in which the shunt resistor 901 which is the bridging member 90 is disposed, the islands 612 and 614 are connected to the tie bar 661a by the corresponding output terminals 63P1 and 63P2 and the signal terminal 641. There is. The wiring portions 622 and 623 are connected to the tie bar 661 a by the dummy terminal 65.
　タイバー６６１ｂは、出力端子６３Ｐ１，６３Ｐ２の幅狭部６３ａ及び信号端子６４のクランク部６４ａよりもアイランド６１から離れた位置であって、バスバー２７及び配線基板２２との接続部よりも近い位置に連結されている。タイバー６６１ｂは、Ｘ方向に沿って一直線状に延設されている。 The tie bar 661b is connected to a position farther from the island 61 than the narrow portions 63a of the output terminals 63P1 and 63P2 and the crank portion 64a of the signal terminal 64 and closer to a connection portion with the bus bar 27 and the wiring board 22 It is done. The tie bars 661b extend in a straight line along the X direction.
　図２１に示すように、２段目のタイバー６６０ｂ，６６１ｂは、１段目のタイバー６６０ａ，６６１ａよりも幅が広くされている。タイバー６６０ａ，６６１ａの幅は狭いため、主端子６３及び信号端子６４の曲げ加工などの際に邪魔にならず、且つ、半導体モジュール４０の体格を小型化することができる。また、タイバーカット時の寸法ずれを小さくすることができる。一方、タイバー６６０ｂ，６６１ｂの幅は広いため、これにより剛性を向上し、封止樹脂体５０の成形時においてタイバー６６の変形を抑制することができる。したがって、主端子６３及び信号端子６４の位置精度を向上することができる。特に信号端子６４の位置精度を向上することができる。 As shown in FIG. 21, the second tier tie bars 660b and 661b are wider than the first tier tie bars 660a and 661a. Since the width of the tie bars 660a and 661a is narrow, the tie bars 660a and 661a do not obstruct the bending of the main terminals 63 and the signal terminals 64, and the size of the semiconductor module 40 can be miniaturized. In addition, dimensional deviation at the time of tie bar cutting can be reduced. On the other hand, since the width of the tie bars 660 b and 661 b is wide, the rigidity can be improved thereby, and the deformation of the tie bars 66 can be suppressed at the time of molding the sealing resin body 50. Therefore, the positional accuracy of the main terminal 63 and the signal terminal 64 can be improved. In particular, the positional accuracy of the signal terminal 64 can be improved.
　主端子６３及び信号端子６４における外部との接続部は、外枠６７に対して連結されておらず、フリーとなっている。主端子６３及び信号端子６４は、金属板からリードフレーム６０を打ち抜きする際に、外枠６７から切り離されている。 The connection parts with the outside in the main terminal 63 and the signal terminal 64 are not connected with the outer frame 67, and are free. The main terminals 63 and the signal terminals 64 are separated from the outer frame 67 when the lead frame 60 is punched out of a metal plate.
　信号端子６４の先端は、図６、図１４、及び図２１などに示すように、スエージ加工が施されている。信号端子６４の先端は、スエージ加工により潰されて傾斜を有し、四角錐状となっている。これにより、信号端子６４を配線基板２２に対して効率よく挿入実装することができる。スエージ加工により、バリを潰すこともできる。 The tip of the signal terminal 64 is swaged as shown in FIG. 6, FIG. 14, and FIG. The tip of the signal terminal 64 is crushed by swaging to have a slope, and has a quadrangular pyramid shape. As a result, the signal terminals 64 can be efficiently inserted into and mounted on the wiring board 22. It is possible to crush the burrs by swaging.
　信号端子６４の隣りに配置されたダミー端子６５は、図２１に示すように、Ｙ方向に延設されて、外枠６７にそれぞれ連結されている。これにより、外枠６７との吊り箇所が増えるため、成形時においてタイバー６６１ａ，６６１ｂの変形を抑制することができる。したがって、出力端子６３Ｐ１，６３Ｐ２及び信号端子６４の位置精度を向上することができる。特に信号端子６４の位置精度を向上することができる。 The dummy terminals 65 disposed adjacent to the signal terminals 64 are extended in the Y direction and connected to the outer frame 67, as shown in FIG. As a result, the number of hanging points with the outer frame 67 increases, so that deformation of the tie bars 661a and 661b can be suppressed at the time of molding. Therefore, the positional accuracy of the output terminals 63P1 and 63P2 and the signal terminal 64 can be improved. In particular, the positional accuracy of the signal terminal 64 can be improved.
　上記したように、架橋部材９０は、スイッチング素子７０を介してアイランド６１と配線部６２とを接続する。クリップ９００の１つは、アイランド６１１及び配線部６２０上に配置される。別のクリップ９００は、アイランド６１３及び配線部６２２上に配置される。シャント抵抗器９０１の１つは、アイランド６１２及び配線部６２１上に配置される。別のシャント抵抗器９０１は、アイランド６１４及び配線部６２３上に配置される。 As described above, the bridging member 90 connects the island 61 and the wiring portion 62 via the switching element 70. One of the clips 900 is disposed on the island 611 and the wiring portion 620. Another clip 900 is disposed on the island 613 and the wiring portion 622. One of the shunt resistors 901 is disposed on the island 612 and the wiring portion 621. Another shunt resistor 901 is disposed on the island 614 and the wiring portion 623.
　図３０では、アイランド６１及び配線部６２において、架橋部材９０の配置される部分、換言すればＺ方向からの投影部分を破線で示している。アイランド６１における架橋部材９０の配置部６０ａと、同じ架橋部材９０が配置される配線部６２における架橋部材９０の配置部６０ｂとが、Ｘ方向に並んで配置されている。すなわち、同じ架橋部材９０に対する配置部６０ａ，６０ｂの並び方向が、アイランド６１及び配線部６２が連結された１段目のタイバー６６０ａ，６６１ａの延設方向と同じ方向とされている。これにより、半導体モジュール４０において、アイランド６１に対して同じ側に配置された１段目のタイバー痕６６ａの並び方向と、架橋部材９０それぞれの延設方向とが同じ方向（Ｘ方向）とされている。 In FIG. 30, in the island 61 and the wiring portion 62, a portion where the bridging member 90 is disposed, in other words, a projected portion from the Z direction is indicated by a broken line. An arrangement portion 60a of the bridge member 90 in the island 61 and an arrangement portion 60b of the bridge member 90 in the wiring portion 62 in which the same bridge member 90 is arranged are arranged side by side in the X direction. That is, the arranging direction of the placement parts 60a and 60b with respect to the same bridging member 90 is the same as the extending direction of the first stage tie bars 660a and 661a to which the island 61 and the wiring part 62 are connected. Thereby, in the semiconductor module 40, the arranging direction of the first stage tie bar marks 66a arranged on the same side with respect to the island 61 and the extending direction of the bridging members 90 are made the same direction (X direction). There is.
　図３１では、本実施形態と参考例を比較している。参考例においては、本実施形態の関連する要素の符号に対し、末尾にｒを付与している。本実施形態では、タイバー６６０ａ，６６１ａの延設方向と、架橋部材９０の延設方向が略一致している。参考例では、タイバー６６０ａｒ，６６１ａｒの延設方向と、架橋部材９０ｒの延設方向が略直交している。図３１に示すように、平行配置とした方が、直交配置とする構成に較べて、タイバー６６の延設方向と直交する方向において、タイバー６６から架橋部材９０までの最大長さを長くすることができる。これにより、封止樹脂体５０の成形時に、成形型に接触したアイランド６１や配線部６２が撓みやすい。特に本実施形態では、複数相に対応する数のアイランド６１１～６１４及び配線部６２を有するため、Ｚ方向においてアイランド６１１～６１４及び配線部６２に高さばらつきが生じやすい。しかしながら、上記した平行配置とすることで、裏面５０ｂから放熱面６１１ａ～６１４ａ，６２０ａ～６２３ａなどを露出させるべく、成形型にアイランド６１１～６１４及び配線部６２を接触させる際、高さばらつきが生じていても、アイランド６１や配線部６２が応力を緩和できる。したがって、アイランド６１１～６１４と対応するスイッチング素子７０との接合部に作用する応力を低減することができる。 FIG. 31 compares this embodiment with a reference example. In the reference example, r is added to the end of the reference numerals of the relevant elements of this embodiment. In the present embodiment, the extending direction of the tie bars 660a and 661a and the extending direction of the bridging member 90 substantially coincide with each other. In the reference example, the extending direction of the tie bars 660ar and 661ar and the extending direction of the bridging member 90r are substantially orthogonal to each other. As shown in FIG. 31, in the parallel arrangement, the maximum length from the tie bar 66 to the bridging member 90 is made longer in the direction orthogonal to the extending direction of the tie bar 66 as compared to the arrangement in which the arrangement is orthogonal. Can. Thus, when molding the sealing resin body 50, the island 61 and the wiring portion 62 in contact with the molding die are easily bent. In particular, in the present embodiment, since the islands 611 to 614 and the wiring portions 62 corresponding to a plurality of phases are provided, height variations easily occur in the islands 611 to 614 and the wiring portions 62 in the Z direction. However, with the parallel arrangement described above, when the islands 611 to 614 and the wiring portion 62 are brought into contact with the molding die in order to expose the heat radiating surfaces 611a to 614a and 620a to 623a from the back surface 50b, height variations occur. Even if it does, the island 61 and the wiring part 62 can relieve stress. Therefore, the stress acting on the junctions between the islands 611 to 614 and the corresponding switching elements 70 can be reduced.
　複数相に対応する数のアイランド６１１～６１４及び配線部６２を有するため、Ｘ方向においてタイバー６６の長さも長くなっている。これに対し、架橋部材９０の配置対象であるアイランド６１１～６１４及び配線部６２の少なくとも１つは、複数箇所で同じタイバー６６に連結されている。具体的には、アイランド６１１～６１４が、それぞれ２箇所で同じタイバー６６に連結されている。これによれば、封止樹脂体５０の成形時において、タイバー６６が変形するのを抑制することができる。タイバー変形の抑制により、アイランド６１１～６１４と対応するスイッチング素子７０との接合部に作用する応力を低減することができる。 Since the islands 611 to 614 and the wiring portions 62 correspond in number to the multiple phases, the length of the tie bar 66 is also longer in the X direction. On the other hand, at least one of the islands 611 to 614 and the wiring portion 62, which is the arrangement target of the bridging member 90, is connected to the same tie bar 66 at a plurality of places. Specifically, the islands 611 to 614 are connected to the same tie bar 66 at two places respectively. According to this, it is possible to suppress the deformation of the tie bar 66 at the time of molding the sealing resin body 50. By suppressing the tie bar deformation, it is possible to reduce the stress acting on the junction between the islands 611 to 614 and the corresponding switching element 70.
　アイランド６１１，６１３は、対応する正極端子６３Ｂ１，６３Ｂ２によってタイバー６６０ａに連結されるとともに、ダミー端子６５によってタイバー６６０ａに連結されている。このように、主端子６３よりも幅の狭いダミー端子６５を採用することで、タイバー６６０ａの変形を抑制しつつ、リードフレーム６０の体格増大を抑制することができる。 The islands 611 and 613 are connected to the tie bar 660 a by the corresponding positive electrode terminals 63 B 1 and 63 B 2 and to the tie bar 660 a by the dummy terminal 65. Thus, by adopting the dummy terminal 65 narrower than the main terminal 63, it is possible to suppress an increase in physical size of the lead frame 60 while suppressing the deformation of the tie bar 660a.
　アイランド６１１，６１３に連結されたダミー端子６５は、連結部６８により、Ｙ方向において外枠６７に連結されている。これによっても、剛性を向上し、タイバー６６０ａ，６６０ｂの変形を抑制することができる。また、連結部６８は、電気的な接続機能を提供しないので、タイバーカット時に外枠６７から切り離しても、バスバー２７との溶接に影響しない。 The dummy terminals 65 connected to the islands 611 and 613 are connected to the outer frame 67 in the Y direction by the connecting portion 68. Also by this, the rigidity can be improved and the deformation of the tie bars 660a and 660b can be suppressed. In addition, since the connecting portion 68 does not provide an electrical connection function, welding to the bus bar 27 is not affected even if it is separated from the outer frame 67 at the time of tie bar cutting.
　アイランド６１２，６１４は、対応する出力端子６３Ｐ１，６３Ｐ２及び信号端子６４１によって、タイバー６６１ａ，６６１ｂに連結されている。このように、主端子６３よりも幅の狭い信号端子６４１を用いることで、タイバー６６１ａ，６６１ｂの変形を抑制しつつ、リードフレーム６０の体格増大を抑制することができる。 The islands 612 and 614 are connected to the tie bars 661a and 661b by the corresponding output terminals 63P1 and 63P2 and the signal terminal 641. Thus, by using the signal terminal 641 narrower than the main terminal 63, it is possible to suppress an increase in physical size of the lead frame 60 while suppressing the deformation of the tie bars 661a and 661b.
　同じ架橋部材９０が配置されるアイランド６１及び配線部６２は、互いに異なるタイバー６６０ａ，６６１ａに連結されている。これによれば、アイランド６１及び配線部６２が、タイバー６６に対して両吊りとなる。したがって、成形時においてタイバー６６の変形を抑制することができる。なお、架橋部材の延設方向がＹ方向の場合、両吊り構造では、タイバー変形によりスイッチング素子７０の接合部に対して、Ｘ方向のせん断応力が作用する。これに対し、本実施形態では、架橋部材９０の延設方向がタイバー６６と同じＸ方向となるため、せん断応力を抑制することもできる。 The island 61 and the wiring portion 62 in which the same bridging member 90 is disposed are connected to different tie bars 660a and 661a. According to this, the island 61 and the wiring portion 62 are both suspended with respect to the tie bar 66. Therefore, deformation of the tie bar 66 can be suppressed at the time of molding. When the extending direction of the bridging member is the Y direction, shear stress in the X direction acts on the joint portion of the switching element 70 due to tie bar deformation in the both suspension structure. On the other hand, in the present embodiment, since the extending direction of the bridging member 90 is the same X direction as the tie bar 66, shear stress can be suppressed.
　シャント抵抗器９０１が配置されるアイランド６１２，６１４は、対応する出力端子６３Ｐ１，６３Ｐ２及び信号端子６４０によってタイバー６６１ａに連結され、アイランド６１２，６１４に連なる配線部６２０，６２２及びダミー端子６５を介してタイバー６６０ａに連結されている。また、シャント抵抗器９０１が配置される配線部６２１，６２３は、対応する負極端子６３Ｅ１，６３Ｅ２を介してタイバー６６０ａ，６６０ｂに連結され、ダミー端子６５を介してタイバー６６１ａに連結されている。このように、シャント抵抗器９０１が配置されるアイランド６１２，６１４及び配線部６２１，６２３は両吊りとされている。これにより、シャント抵抗器９０１にボンディングワイヤ４１を超音波接合する際のアイランド６１２，６１４及び配線部６２１，６２３の振動を抑制し、ボンディング性を向上することができる。 The islands 612 and 614 in which the shunt resistor 901 is disposed are connected to the tie bar 661 a by the corresponding output terminals 63P1 and 63P2 and the signal terminal 640, and via the wiring portions 620 and 622 and the dummy terminals 65 connected to the islands 612 and 614. It is connected to a tie bar 660a. The wiring portions 621 and 623 in which the shunt resistor 901 is disposed are connected to the tie bars 660a and 660b via the corresponding negative terminals 63E1 and 63E2, and are connected to the tie bar 661a via the dummy terminals 65. Thus, the islands 612 and 614 and the wiring portions 621 and 623 in which the shunt resistor 901 is disposed are both suspended. As a result, it is possible to suppress the vibration of the islands 612 and 614 and the wiring parts 621 and 623 when the bonding wire 41 is ultrasonically bonded to the shunt resistor 901, and to improve the bonding property.
　（その他） 
　本実施形態では、架橋部材９０として、２つのクリップ９００と２つのシャント抵抗器９０１を用いる例を示したが、これに限定されない。たとえばすべての架橋部材９０をシャント抵抗器９０１としてもよい。これにより、４つの架橋部材９０を１種類に共通化し、部品点数を削減することができる。 (Others)
In the present embodiment, an example in which two clips 900 and two shunt resistors 901 are used as the cross-linking member 90 is shown, but the present invention is not limited to this. For example, all bridge members 90 may be shunt resistors 901. Thereby, four bridge members 90 can be made common to one type, and the number of parts can be reduced.
　図３２は、半導体モジュール４０の変形例を示している。図３２では、便宜上、信号端子６４を省略するとともに、封止樹脂体５０や主端子６３を簡素化して図示している。図３２では、同じ側面５０ｃから突出する正極端子６３Ｂ１と負極端子６３Ｅ１、正極端子６３Ｂ２と負極端子６３Ｅ２を、それぞれＸ方向において近づけて配置している。 FIG. 32 shows a modification of the semiconductor module 40. In FIG. 32, for convenience, the signal terminal 64 is omitted, and the sealing resin body 50 and the main terminal 63 are illustrated in a simplified manner. In FIG. 32, the positive electrode terminal 63B1 and the negative electrode terminal 63E1, and the positive electrode terminal 63B2 and the negative electrode terminal 63E2 protruding from the same side surface 50c are arranged in proximity to each other in the X direction.
　さらに、封止樹脂体５０の一面５０ａ及び裏面５０ｂの一方にコンデンサ４４を配置し、コンデンサ４４と正極端子６３Ｂ１，６３Ｂ２及び負極端子６３Ｅ１，６３Ｅ２とを接続している。ここでは、スナバ回路用のコンデンサ４４を採用しており、２つのコンデンサ４４が一面５０ａに配置されている。一面５０ａには、側面５０ｃにも開口する凹部５５が２箇所形成されており、凹部５５のそれぞれにコンデンサ４４が個別に配置されている。コンデンサ４４のリード４４ａは、正極端子６３Ｂ１及び負極端子６３Ｅ１にそれぞれ接続されている。別のコンデンサ４４のリード４４ａは、正極端子６３Ｂ２及び負極端子６３Ｅ２にそれぞれ接続されている。これによれば、ＸＹ面において体格を増大することなく、コンデンサ４４を一体化することができる。なお、スナバ回路用のコンデンサ４４に代えて、平滑用のコンデンサを配置してもよい。 Furthermore, the capacitor 44 is disposed on one of the surface 50a and the back surface 50b of the sealing resin body 50, and the capacitor 44 is connected to the positive electrode terminals 63B1 and 63B2 and the negative electrode terminals 63E1 and 63E2. Here, a capacitor 44 for the snubber circuit is employed, and two capacitors 44 are disposed on the one surface 50a. Recesses 55 which are also open to the side surface 50c are formed in two places on the one surface 50a, and the capacitors 44 are individually disposed in each of the recesses 55. The leads 44a of the capacitor 44 are connected to the positive electrode terminal 63B1 and the negative electrode terminal 63E1, respectively. The leads 44a of another capacitor 44 are connected to the positive electrode terminal 63B2 and the negative electrode terminal 63E2, respectively. According to this, the capacitor 44 can be integrated without increasing the physique in the XY plane. A smoothing capacitor may be disposed instead of the capacitor 44 for the snubber circuit.
　図３３は、半導体モジュール４０の変形例を示している。図３３では、便宜上、半導体モジュール４０の一部のみを図示している。この変形例では、駆動部８０が、各相の電流を検出する電流検出回路を有している。図３３に示すように、シャント抵抗器９０１の低電位が、ボンディングワイヤ４１、信号端子６４、ボンディングワイヤ４１を介して、駆動部８０のパッド８１に入力される。なお、スイッチング素子７０１Ｌ側も同じ構成とされている。以上によれば、シャント抵抗器９０１に接続されるボンディングワイヤ４１の長さを短くすることができる。たとえば、成形時にボンディングワイヤ４１に不良が生じるのを抑制することができる。なお、シャント抵抗器９０１の低電位側に対応する信号端子６４は、Ｘ方向に延びる連結部によって２本の信号端子６４が連結されてなる。駆動部８０に入力されるシャント抵抗器９０１の高電位は、スイッチング素子７００Ｌのソース電位によって代用されている。 FIG. 33 shows a modification of the semiconductor module 40. In FIG. 33, only a part of the semiconductor module 40 is illustrated for the sake of convenience. In this modification, the drive unit 80 has a current detection circuit that detects the current of each phase. As shown in FIG. 33, the low potential of the shunt resistor 901 is input to the pad 81 of the drive unit 80 through the bonding wire 41, the signal terminal 64, and the bonding wire 41. The switching element 701 L side is also configured the same. According to the above, the length of the bonding wire 41 connected to the shunt resistor 901 can be shortened. For example, generation of defects in bonding wire 41 can be suppressed during molding. The signal terminal 64 corresponding to the low potential side of the shunt resistor 901 is formed by connecting two signal terminals 64 by a connecting portion extending in the X direction. The high potential of the shunt resistor 901 input to the drive unit 80 is substituted by the source potential of the switching element 700L.
　（第２実施形態）
　本実施形態は、先行実施形態を参照できる。このため、先行実施形態に示した回転電機１及び半導体モジュール４０と共通する部分についての説明は、簡略化又は省略する。 Second Embodiment
This embodiment can refer to the preceding embodiments. Therefore, the description of the portions common to the rotating electrical machine 1 and the semiconductor module 40 shown in the preceding embodiment is simplified or omitted.
　（回転電機の概略構成）
　図３４～図３８に基づき、本実施形態に係る制御装置一体型の回転電機１の構成について説明する。なお、回転電機１の概略構成については、特開２００７－１１２８０７号公報を援用することができる。図３４に示すように、本実施形態の回転電機１も、回転電機部１０と、回転電機部１０を制御する制御装置部２０を備えており、制御装置部２０が制御対象である回転電機部１０と一体化されている。 (Schematic configuration of rotating electric machine)
The configuration of the controller-integrated electric rotating machine 1 according to the present embodiment will be described based on FIGS. 34 to 38. In addition, about schematic structure of the rotary electric machine 1, Unexamined-Japanese-Patent No. 2007-112807 can be used. As shown in FIG. 34, the rotating electrical machine 1 of the present embodiment also includes the rotating electrical machine unit 10 and the control device unit 20 for controlling the rotating electrical machine unit 10, and the control device unit 20 is a controlled object. Integrated with 10
　（回転電機部）
　回転電機部１０は、エンジンから駆動力が供給されることで、バッテリを充電するための電力を発生する発電機（オルタネータ）として機能する。回転電機部１０は、第１実施形態同様、ハウジング１１と、固定子１２と、回転子１３と、プーリ１４と、スリップリング１５と、ブラシ１６を備えている。 (Rotary electric machine part)
The rotating electrical machine unit 10 functions as a generator (alternator) that generates electric power for charging the battery by being supplied with driving force from the engine. The rotating electrical machine unit 10 includes a housing 11, a stator 12, a rotor 13, a pulley 14, a slip ring 15, and a brush 16 as in the first embodiment.
　ハウジング１１は、固定子１２及び回転子１３を収容するとともに、回転子１３を回転可能に支持している。ハウジング１１の軸方向後側には、制御装置部２０が固定されている。固定子１２は、固定子コア１２０と、固定子巻線１２１を有している。図３５に示すように、固定子巻線１２１は、第１実施形態同様、Ｕ相、Ｖ相、Ｗ相の三相巻線からなる固定子巻線１２１ａと、Ｘ相、Ｙ相、Ｚ相の三相巻線からなる固定子巻線１２１ｂを有している。固定子巻線１２１ａ，１２１ｂは、互いに所定電気角（たとえば３０度）ずれて配置されている。 The housing 11 accommodates the stator 12 and the rotor 13 and rotatably supports the rotor 13. A control device unit 20 is fixed to the rear side in the axial direction of the housing 11. The stator 12 has a stator core 120 and a stator winding 121. As shown in FIG. 35, as in the first embodiment, the stator winding 121 has a stator winding 121a consisting of three-phase windings of U-phase, V-phase and W-phase, and X-phase, Y-phase and Z-phase. And a stator winding 121b consisting of three-phase windings. The stator windings 121a and 121b are arranged offset from each other by a predetermined electrical angle (for example, 30 degrees).
　エンジンから供給される駆動力によって回転子１３が回転し、発生した磁束が固定子巻線１２１と鎖交することで、固定子巻線１２１が交流を生じる。回転子１３は、第１実施形態同様、回転子コア１３０と、回転子巻線１３１と、ファン１３２と、回転軸１３３を有している。プーリ１４は、回転軸１３３のうち、ハウジング１１から前方に突出した部分に連結されており、回転軸１３３とともに回転する。 The rotor 13 is rotated by the driving force supplied from the engine, and the generated magnetic flux is interlinked with the stator winding 121, whereby the stator winding 121 generates an alternating current. The rotor 13 has a rotor core 130, a rotor winding 131, a fan 132, and a rotating shaft 133, as in the first embodiment. The pulley 14 is connected to a portion of the rotating shaft 133 that protrudes forward from the housing 11 and rotates with the rotating shaft 133.
　スリップリング１５は、回転軸１３３のうち、ハウジング１１から後方に突出した部分の外周面に、絶縁部材を介して固定されている。スリップリング１５は、配線を介して回転子巻線１３１に接続されている。ブラシ１６は、たとえばバネによって径方向において回転軸１３３側に押圧され、スリップリング１５の外周面に接触している。ブラシ１６は、ブラシホルダ１６０に保持されている。ブラシ１６及びスリップリング１５を介して、回転子巻線１３１に直流が供給される。 The slip ring 15 is fixed to an outer peripheral surface of a portion of the rotation shaft 133 which protrudes rearward from the housing 11 via an insulating member. The slip ring 15 is connected to the rotor winding 131 via a wire. The brush 16 is pressed to the rotary shaft 133 side in the radial direction, for example, by a spring, and is in contact with the outer peripheral surface of the slip ring 15. The brush 16 is held by a brush holder 160. Direct current is supplied to the rotor winding 131 via the brush 16 and the slip ring 15.
　（制御装置部）
　制御装置部２０は、バッテリを充電するために、回転電機部１０の発生した電力を直流に変換し、バッテリへ電力の供給を行う。制御装置部２０は、図示しないレギュレータと、図３５に示す整流回路部３０を備えている。レギュレータは、回転子巻線１３１に供給する直流を制御することで、電圧をバッテリへの充電に適した所定電圧に維持する。整流回路部３０は、回転電機部１０から供給される交流を、スイッチング素子７０により整流して直流に変換する。整流回路部３０の構成は、第１実施形態に示したインバータ回路部２３と同じ構成となっている。 (Control unit)
In order to charge the battery, control unit 20 converts the power generated by rotating electrical machine 10 into direct current, and supplies the power to the battery. The control device unit 20 includes a regulator (not shown) and a rectifier circuit unit 30 shown in FIG. The regulator controls the direct current supplied to the rotor winding 131 to maintain the voltage at a predetermined voltage suitable for charging the battery. The rectifying circuit unit 30 rectifies the alternating current supplied from the rotating electrical machine unit 10 by the switching element 70 and converts it into direct current. The configuration of the rectifier circuit unit 30 is the same as that of the inverter circuit unit 23 shown in the first embodiment.
　整流回路部３０は、３つの半導体モジュール４０により構成されている。各半導体モジュール４０は、二相分の上下アームを構成する複数のスイッチング素子７０を有している。本実施形態でも、スイッチング素子７０としてｎチャネル型のＭＯＳＦＥＴを採用している。３つの半導体モジュール４０のうち、第１の半導体モジュール４０がＵ相及びＶ相の上下アームを構成し、第２の半導体モジュール４０がＷ相及びＸ相の上下アームを構成し、第３の半導体モジュール４０がＹ相及びＺ相の上下アームを構成している。 The rectifier circuit unit 30 is configured of three semiconductor modules 40. Each semiconductor module 40 has a plurality of switching elements 70 constituting upper and lower arms for two phases. Also in the present embodiment, an n-channel MOSFET is employed as the switching element 70. Of the three semiconductor modules 40, the first semiconductor module 40 constitutes upper and lower arms of U phase and V phase, the second semiconductor module 40 constitutes upper and lower arms of W phase and X phase, and the third semiconductor A module 40 constitutes upper and lower arms of Y phase and Z phase.
　各アームは１つのスイッチング素子７０により構成されており、半導体モジュール４０のそれぞれは、４つのスイッチング素子７０を有している。半導体モジュール４０は、第１の上下アームを構成する上アーム側のスイッチング素子７００Ｈ及び下アーム側のスイッチング素子７００Ｌと、第２の上下アームを構成する上アーム側のスイッチング素子７０１Ｈ及び下アーム側のスイッチング素子７０１Ｌをそれぞれ有している。スイッチング素子７００Ｈ，７００Ｌが直列接続され、スイッチング素子７０１Ｈ，７０１Ｌが直列接続されている。 Each arm is constituted by one switching element 70, and each of the semiconductor modules 40 has four switching elements 70. The semiconductor module 40 includes the switching element 700H on the upper arm side and the switching element 700L on the lower arm side constituting the first upper and lower arms, and the switching element 701H on the upper arm side and the lower arm side constituting the second upper and lower arm. Each has a switching element 701L. Switching elements 700H and 700L are connected in series, and switching elements 701H and 701L are connected in series.
　図３６及び図３７に示すように、制御装置部２０は、整流回路部３０を構成するパワーアセンブリＰＡ１，ＰＡ２，ＰＡ３と、カバー３１を備えている。パワーアセンブリＰＡ１は、半導体モジュール４０と、ヒートシンク２４と、バスバー２７を含むバスバーアセンブリＢＡ１を有している。パワーアセンブリＰＡ２は、半導体モジュール４０と、ヒートシンク２４と、バスバー２７を含むバスバーアセンブリＢＡ２を有している。パワーアセンブリＰＡ３は、半導体モジュール４０と、ヒートシンク２４と、バスバー２７を含むバスバーアセンブリＢＡ３を有している。パワーアセンブリＰＡ１，ＰＡ２，ＰＡ３それぞれのヒートシンク２４は、対応する半導体モジュール４０の発生した熱を放熱する。 As shown in FIGS. 36 and 37, the control device unit 20 includes power assemblies PA1, PA2 and PA3 constituting the rectifier circuit unit 30, and a cover 31. The power assembly PA1 includes a semiconductor module 40, a heat sink 24, and a bus bar assembly BA1 including a bus bar 27. The power assembly PA2 includes a semiconductor module 40, a heat sink 24, and a bus bar assembly BA2 including a bus bar 27. The power assembly PA3 includes a semiconductor module 40, a heat sink 24, and a bus bar assembly BA3 including a bus bar 27. The heat sink 24 of each of the power assemblies PA1, PA2, PA3 dissipates the heat generated by the corresponding semiconductor module 40.
　パワーアセンブリＰＡ１の半導体モジュール４０において、スイッチング素子７００Ｈ，７００ＬによりＵ相上下アームが構成され、スイッチング素子７０１Ｈ，７０１ＬによりＶ相上下アームが構成されている。パワーアセンブリＰＡ２の半導体モジュール４０において、スイッチング素子７００Ｈ，７００ＬによりＷ相上下アームが構成され、スイッチング素子７０１Ｈ，７０１ＬによりＸ相上下アームが構成されている。パワーアセンブリＰＡ３の半導体モジュール４０において、スイッチング素子７００Ｈ，７００ＬによりＹ相上下アームが構成され、スイッチング素子７０１Ｈ，７０１ＬによりＺ相上下アームが構成されている。 In semiconductor module 40 of power assembly PA1, switching elements 700H and 700L constitute U-phase upper and lower arms, and switching elements 701H and 701L constitute V-phase upper and lower arms. In the semiconductor module 40 of the power assembly PA2, the switching elements 700H and 700L constitute W-phase upper and lower arms, and the switching elements 701H and 701L constitute X-phase upper and lower arms. In the semiconductor module 40 of the power assembly PA3, the switching elements 700H and 700L constitute Y-phase upper and lower arms, and the switching elements 701H and 701L constitute Z-phase upper and lower arms.
　バスバーアセンブリＢＡ１，ＢＡ２，ＢＡ３は、対応する半導体モジュール４０を配線するためのバスバー２７の集合体である。具体的には、図３５に示すように、半導体モジュール４０を配線するための正極バスバー２７Ｂ、負極バスバー２７Ｅ、及び出力バスバー２７Ｐ１，２７Ｐ２が、インサート成形などによって同じ樹脂部材に固定されてなる。正極バスバー２７Ｂ、負極バスバー２７Ｅ、及び出力バスバー２７Ｐ１，２７Ｐ２は、所定の間隔をあけた状態で、樹脂により一体化されている。正極バスバー２７Ｂ及び負極バスバー２７Ｅは、樹脂を介して積層配置されている。 The bus bar assemblies BA1, BA2, BA3 are a collection of bus bars 27 for wiring the corresponding semiconductor modules 40. Specifically, as shown in FIG. 35, positive electrode bus bar 27B, negative electrode bus bar 27E, and output bus bars 27P1 and 27P2 for wiring semiconductor module 40 are fixed to the same resin member by insert molding or the like. The positive electrode bus bar 27B, the negative electrode bus bar 27E, and the output bus bars 27P1 and 27P2 are integrated by resin in a state where a predetermined distance is left. The positive electrode bus bar 27B and the negative electrode bus bar 27E are stacked and arranged via a resin.
　バスバーアセンブリＢＡ１，ＢＡ２，ＢＡ３のそれぞれにおいて、正極バスバー２７Ｂは、図３５に示すように、上アーム側のスイッチング素子７００Ｈ，７０１Ｈのドレイン電極に接続されている。負極バスバー２７Ｅは、下アーム側のスイッチング素子７００Ｌ，７０１Ｌのソース電極に接続されている。出力バスバー２７Ｐ１は、スイッチング素子７００Ｈ，７００Ｌの接続点に接続されている。出力バスバー２７Ｐ２は、スイッチング素子７０１Ｈ，７０１Ｌの接続点に接続されている。 In each of the bus bar assemblies BA1, BA2, and BA3, as shown in FIG. 35, the positive electrode bus bar 27B is connected to the drain electrodes of the switching elements 700H and 701H on the upper arm side. The negative bus bar 27E is connected to the source electrodes of the switching elements 700L and 701L on the lower arm side. The output bus bar 27P1 is connected to the connection point of the switching elements 700H and 700L. The output bus bar 27P2 is connected to the connection point of the switching elements 701H and 701L.
　図３８に示すように、パワーアセンブリＰＡ１，ＰＡ２，ＰＡ３のそれぞれにおいて、半導体モジュール４０はバスバー２７に接続された状態で、対応するバスバーアセンブリＢＡ１，ＢＡ２，ＢＡ３に固定されている。また、ヒートシンク２４は、半導体モジュール４０の放熱面側に固定されている。 As shown in FIG. 38, in each of power assemblies PA1, PA2 and PA3, semiconductor module 40 is fixed to corresponding bus bar assemblies BA1, BA2 and BA3 in a state of being connected to bus bar 27. Further, the heat sink 24 is fixed to the heat dissipation surface side of the semiconductor module 40.
　パワーアセンブリＰＡ１のみ、電源端子３２が一体化されている。図３７及び図３８に示すように、パワーアセンブリＰＡ１は、半導体モジュール４０と、ヒートシンク２４と、バスバーアセンブリＢＡ１に加えて、電源端子３２と、固定部材３３を有している。 The power supply terminal 32 is integrated only in the power assembly PA1. As shown in FIGS. 37 and 38, the power assembly PA1 includes a power supply terminal 32 and a fixing member 33 in addition to the semiconductor module 40, the heat sink 24, and the bus bar assembly BA1.
　電源端子３２には、バッテリの正極からの配線が接続される。電源端子３２は、固定部材３３によってバスバーアセンブリＢＡ１に固定されている。電源端子３２は、ナット３４によって固定部材３３に固定されている。固定部材３３は、正極バスバー２７Ｂに接触した状態で、正極バスバー２７Ｂ、負極バスバー２７Ｅ、及び出力バスバー２７Ｐ１，２７Ｐ２とともに樹脂で一体化されている。 A wire from the positive electrode of the battery is connected to the power supply terminal 32. The power supply terminal 32 is fixed to the bus bar assembly BA1 by a fixing member 33. The power supply terminal 32 is fixed to the fixing member 33 by a nut 34. The fixing member 33 is integrated with the positive electrode bus bar 27B, the negative electrode bus bar 27E, and the output bus bars 27P1 and 27P2 with resin in a state of being in contact with the positive electrode bus bar 27B.
　パワーアセンブリＰＡ１，ＰＡ２，ＰＡ３は、回転電機部１０のハウジング１１の軸方向後端において、回転軸１３３を取り囲むように略Ｕ字状に配置されている。具体的には、回転軸１３３周りにおいて、パワーアセンブリＰＡ１、パワーアセンブリＰＡ２、パワーアセンブリＰＡ３の順に配置されている。そして、図３７に示すように、ボルト３５によってハウジング１１に固定されている。 The power assemblies PA1, PA2, PA3 are arranged in a substantially U-shape at the axial rear end of the housing 11 of the rotary electric machine 10 so as to surround the rotary shaft 133. Specifically, around the rotation axis 133, the power assembly PA1, the power assembly PA2, and the power assembly PA3 are arranged in this order. And as shown in FIG. 37, it is fixing to the housing 11 by the volt | bolt 35. As shown in FIG.
　隣り合うパワーアセンブリＰＡ１，ＰＡ２において、正極バスバー２７Ｂ同士が接続され、隣り合うパワーアセンブリＰＡ２，ＰＡ３において、正極バスバー２７Ｂ同士が接続されている。同様に、隣り合うパワーアセンブリＰＡ１，ＰＡ２において、負極バスバー２７Ｅ同士が接続され、隣り合うパワーアセンブリＰＡ２，ＰＡ３において、負極バスバー２７Ｅ同士が接続されている。パワーアセンブリＰＡ１の負極バスバー２７Ｅは、車体に固定されたハウジング１１に接続され、車体を介してバッテリの負極に接続されている。 The positive electrode bus bars 27B are connected to each other in the adjacent power assemblies PA1 and PA2, and the positive electrode bus bars 27B are connected to each other in the adjacent power assemblies PA2 and PA3. Similarly, in adjacent power assemblies PA1 and PA2, the negative bus bars 27E are connected to each other, and in the adjacent power assemblies PA2 and PA3, the negative bus bars 27E are connected to each other. The negative bus bar 27E of the power assembly PA1 is connected to the housing 11 fixed to the vehicle body, and is connected to the negative electrode of the battery via the vehicle body.
　パワーアセンブリＰＡ１において、出力バスバー２７Ｐ１は、固定子巻線１２１ａのＵ相に接続され、出力バスバー２７Ｐ２は、固定子巻線１２１ａのＶ相に接続されている。パワーアセンブリＰＡ２において、出力バスバー２７Ｐ１は、固定子巻線１２１ａのＷ相に接続され、出力バスバー２７Ｐ２は、固定子巻線１２１ｂのＸ相に接続されている。パワーアセンブリＰＡ３において、出力バスバー２７Ｐ１は、固定子巻線１２１ｂのＹ相に接続され、出力バスバー２７Ｐ２は、固定子巻線１２１ｂのＺ相に接続されている。 In power assembly PA1, output bus bar 27P1 is connected to the U phase of stator winding 121a, and output bus bar 27P2 is connected to the V phase of stator winding 121a. In power assembly PA2, output bus bar 27P1 is connected to the W phase of stator winding 121a, and output bus bar 27P2 is connected to the X phase of stator winding 121b. In power assembly PA3, output bus bar 27P1 is connected to the Y phase of stator winding 121b, and output bus bar 27P2 is connected to the Z phase of stator winding 121b.
　カバー３１は、パワーアセンブリＰＡ１，ＰＡ２，ＰＡ３を覆う樹脂部材である。カバー３１は、電源端子３２の一部を外部に露出させた状態で、パワーアセンブリＰＡ１，ＰＡ２，ＰＡ３を覆うようにハウジング１１に固定されている。 The cover 31 is a resin member that covers the power assemblies PA1, PA2, and PA3. The cover 31 is fixed to the housing 11 so as to cover the power assemblies PA1, PA2, and PA3 in a state in which a part of the power supply terminal 32 is exposed to the outside.
　（回転電機の動作）
　スリップリング１５及びブラシ１６を介して回転子巻線１３１に直流が供給されて磁極が形成された状態で、エンジンから駆動力が供給されると、固定子巻線１２１ａ，１２１ｂがそれぞれ交流（三相交流）を発生する。整流回路部３０は、駆動部８０によって制御され、固定子巻線１２１から出力バスバー２７Ｐ１，２７Ｐ２などを介して供給される交流を整流する。駆動部８０により、スイッチング素子７０のオンオフが制御され、電流の流れる方向が順次切り替えられて、交流が整流される。スイッチング素子７０のデッドタイムにおいては、寄生ダイオードにより、交流が整流される。整流回路部３０により変換された直流は、バッテリに供給される。これにより、バッテリは、回転電機部１０の発生した電力によって充電される。 (Operation of the rotating electrical machine)
In the state where a direct current is supplied to the rotor winding 131 via the slip ring 15 and the brush 16 to form a magnetic pole, when the driving force is supplied from the engine, the stator windings 121a and 121b are alternating current (3 Phase exchange). The rectifier circuit unit 30 is controlled by the drive unit 80 and rectifies alternating current supplied from the stator winding 121 via the output bus bars 27P1 and 27P2. The drive unit 80 controls the on / off of the switching element 70 to sequentially switch the current flow direction to rectify alternating current. During the dead time of the switching element 70, alternating current is rectified by the parasitic diode. The direct current converted by the rectifier circuit unit 30 is supplied to the battery. Thereby, the battery is charged by the power generated by the rotating electrical machine unit 10.
　（半導体モジュール詳細）
　図３９～図５３に示すように、本実施形態の半導体モジュール４０も、封止樹脂体５０と、リードフレーム６０と、スイッチング素子７０と、駆動部８０と、架橋部材９０を備えている。図４６～図５２では、封止樹脂体５０の図示を省略している。図５３では、図２１同様、タイバーカット前のリードフレーム６０を示している。図４６～図５２では、便宜上、ボンディングワイヤ４１の図示を省略している。 (Details of semiconductor module)
As shown in FIGS. 39 to 53, the semiconductor module 40 according to the present embodiment also includes the sealing resin body 50, the lead frame 60, the switching element 70, the driving unit 80, and the bridging member 90. In FIGS. 46 to 52, the sealing resin body 50 is not shown. In FIG. 53, as in FIG. 21, the lead frame 60 before tie bar cutting is shown. In FIG. 46 to FIG. 52, the bonding wire 41 is omitted for the sake of convenience.
　（封止樹脂体）
　封止樹脂体５０は、第１実施形態とほぼ同じ構成とされている。この封止樹脂体５０も、たとえばエポキシ系の樹脂を用いてトランスファモールド法により成形されている。 (Sealing resin body)
The sealing resin body 50 has substantially the same configuration as that of the first embodiment. This sealing resin body 50 is also molded by a transfer molding method using, for example, an epoxy resin.
　図３９～図４４に示すように、封止樹脂体５０は、Ｚ方向の面である一面５０ａ及び裏面５０ｂと、側面を有している。一面５０ａ側に対応するバスバーアセンブリＢＡ１，ＢＡ２，ＢＡ３が配置され、裏面５０ｂ側にヒートシンク２４が配置される。また、主端子６３及び信号端子６４が突出する側面５０ｃ，５０ｄを有している。図４０に示すように、一面５０ａには、エジェクタピン由来のピン痕５３と、成形型のゲート痕５４が設けられている。図４１に示すように、裏面５０ｂには、ピン痕５３が設けられている。 As shown in FIGS. 39 to 44, the sealing resin body 50 has one surface 50a and a back surface 50b, which are surfaces in the Z direction, and a side surface. The bus bar assemblies BA1, BA2, and BA3 corresponding to the one surface 50a side are disposed, and the heat sink 24 is disposed on the back surface 50b side. In addition, side surfaces 50c and 50d from which the main terminal 63 and the signal terminal 64 protrude are provided. As shown in FIG. 40, a pin mark 53 derived from an ejector pin and a gate mark 54 of a mold are provided on the one surface 50a. As shown in FIG. 41, a pin mark 53 is provided on the back surface 50b.
　後述するように、本実施形態ではアイランド６１１，６１３が連結部６１５によって一体化されている。そして、連結部６１５に切り欠き６１５ｂを設け、切り欠き６１５ｂの部分にエジェクタピンを配置できるようにしている。このため、図４１に示すように、切り欠き６１５ｂにピン痕５３が設けられている。切り欠き６１５ｂは、Ｙ方向において連結部６１５の両側にそれぞれ設けられている。これにより、ＸＹ面内においてエジェクタピンがバランスよく配置され、特にアイランド６１１，６１３周辺の離型性を向上することができる。 As described later, in the present embodiment, the islands 611 and 613 are integrated by the connecting portion 615. And the notch 615b is provided in the connection part 615, and it enables it to arrange | position an ejector pin in the part of the notch 615b. Therefore, as shown in FIG. 41, a pin mark 53 is provided in the notch 615b. The notches 615 b are respectively provided on both sides of the connecting portion 615 in the Y direction. As a result, the ejector pins are disposed in a well-balanced manner in the XY plane, and in particular, the releasability around the islands 611 and 613 can be improved.
　（リードフレーム）
　リードフレーム６０も、第１実施形態同様、アイランド６１と、配線部６２と、外部接続用端子である主端子６３及び信号端子６４と、ダミー端子６５を備えている。リードフレーム６０は、信号端子６４の配置を除けば、Ｘ方向の中心に対してほぼ線対称とされている。図５３では、リードフレーム６０のＸ方向の中心を一点鎖線で示している。 (Lead frame)
Similarly to the first embodiment, the lead frame 60 also includes an island 61, a wiring portion 62, a main terminal 63 and a signal terminal 64 which are terminals for external connection, and a dummy terminal 65. The lead frame 60 is substantially line symmetrical with respect to the center in the X direction except for the arrangement of the signal terminals 64. In FIG. 53, the center of the lead frame 60 in the X direction is indicated by an alternate long and short dash line.
　図４６～図４８及び図５３に示すように、アイランド６１は、アイランド６１０～６１４を有している。第１実施形態同様、アイランド６１０には駆動部８０が配置され、アイランド６１１，６１２，６１３，６１４には、スイッチング素子７００Ｈ，７００Ｌ，７０１Ｈ，７０１Ｌが個別に配置される。５つのアイランド６１０～６１４は、互いに略同じ厚みとされ、Ｚ方向において同一面内に配置されている。アイランド６１１～６１４のＸＹ面に沿う面積は、互いに略等しくされている。 As shown in FIGS. 46 to 48 and 53, the island 61 has islands 610 to 614. As in the first embodiment, the drive unit 80 is disposed on the island 610, and the switching elements 700H, 700L, 701H, and 701L are individually disposed on the islands 611, 612, 613, and 614. The five islands 610 to 614 have substantially the same thickness and are arranged in the same plane in the Z direction. The areas of the islands 611 to 614 along the XY plane are substantially equal to one another.
　また、アイランド６１０～６１４の放熱面６１０ａ～６１４ａが、封止樹脂体５０の裏面５０ｂから露出されている。これにより、放熱面６１０ａ～６１４ａから効率よく放熱することができる。アイランド６１のうち、放熱面６１０ａ～６１４ａを除く部分は、封止樹脂体５０によって封止されている。図４５などに示すように、アイランド６１それぞれの側面には、封止樹脂体５０の剥離を抑制するために、凸部が設けられている。 Further, the heat radiation surfaces 610 a to 614 a of the islands 610 to 614 are exposed from the back surface 50 b of the sealing resin body 50. Thus, the heat can be dissipated efficiently from the heat dissipation surfaces 610a to 614a. The portion of the island 61 excluding the heat radiation surfaces 610a to 614a is sealed by a sealing resin body 50. As shown in FIG. 45 and the like, convex portions are provided on the side surfaces of each of the islands 61 in order to suppress peeling of the sealing resin body 50.
　アイランド６１０は、平面略矩形状をなしている。駆動部８０は、アイランド６１０に対し、Ｙ方向において信号端子６４寄りに配置されている。図４８及び図５３などに示すように、アイランド６１０は、信号端子６４とは反対側、すなわちアイランド６１１，６１３側に、駆動部８０が配置されていない部分である非配置部６１０ｃを有している。 The island 610 has a substantially rectangular planar shape. The drive unit 80 is disposed closer to the signal terminal 64 in the Y direction with respect to the island 610. As shown in FIG. 48 and FIG. 53 etc., the island 610 has a non-arranged portion 610 c which is a portion where the drive portion 80 is not arranged on the opposite side to the signal terminal 64, ie, the islands 611 and 613 side. There is.
　したがって、ボンディングワイヤ４１を駆動部８０のパッド８１に接続する際、図示しないクランプ治具にて非配置部６１０ｃを押さえることができる。これにより、アイランド６１０が安定し、ボンディング性を向上することができる。特に本実施形態では、図５３に示すように、パッド８１を平面略矩形状をなす駆動部８０の３辺に集中して設け、信号端子６４とは反対側の辺のパッド８１を少なくしている。特に辺の中央のパッド８１を少なくしている。このため、ボンディングワイヤ４１を邪魔することなく、アイランド６１０をクランプすることができる。 Therefore, when connecting the bonding wire 41 to the pad 81 of the drive unit 80, the non-arranged portion 610c can be pressed by a clamp jig (not shown). As a result, the island 610 can be stabilized, and the bondability can be improved. Particularly in the present embodiment, as shown in FIG. 53, the pads 81 are concentrated on three sides of the drive unit 80 having a substantially rectangular planar shape, and the pads 81 on the side opposite to the signal terminal 64 are reduced. There is. In particular, the central pads 81 on the sides are reduced. Therefore, the island 610 can be clamped without disturbing the bonding wire 41.
　アイランド６１１～６１４は、アイランド６１０の周りに配置されている。アイランド６１２，６１４は、Ｘ方向において、間にアイランド６１０を挟むように設けられている。アイランド６１２，６１４は、ともに平面略矩形状をなしている。アイランド６１２，６１４は、Ｘ方向において、アイランド６１０との間にそれぞれ所定の間隙を有している。アイランド６１２，６１４には、２本のボンディングワイヤ４１がそれぞれ接続されている。ボンディングワイヤ４１は、アイランド６１２，６１４におけるアイランド６１０側の端部であって、信号端子６４側とは反対の端に接続されている。 The islands 611 to 614 are disposed around the island 610. The islands 612 and 614 are provided to sandwich the island 610 in the X direction. The islands 612 and 614 both have a substantially rectangular planar shape. The islands 612 and 614 each have a predetermined gap with the island 610 in the X direction. Two bonding wires 41 are connected to the islands 612 and 614, respectively. The bonding wire 41 is connected to the end on the side of the island 610 in the islands 612 and 614, which is opposite to the end on the side of the signal terminal 64.
　アイランド６１１，６１３は、アイランド６１０に対し、Ｙ方向において信号端子６４とは反対側に設けられている。アイランド６１１，６１３は、所定の間隙を有しつつＸ方向に並んで配置されている。アイランド６１１，６１３は、ともに平面略矩形状をなしている。アイランド６１１は、Ｙ方向においてアイランド６１０，６１２と対向している。アイランド６１３は、Ｙ方向においてアイランド６１０，６１４と対向している。 The islands 611 and 613 are provided on the side opposite to the signal terminal 64 in the Y direction with respect to the island 610. The islands 611 and 613 are arranged side by side in the X direction with a predetermined gap. The islands 611 and 613 both have a substantially rectangular planar shape. The island 611 faces the islands 610 and 612 in the Y direction. The island 613 faces the islands 610 and 614 in the Y direction.
　アイランド６１１，６１３は、連結部６１５により、上アーム側のアイランド６１として一体化されている。連結部６１５は、Ｘ方向に延設されており、アイランド６１１，６１３の間に配置されている。連結部６１５の一方の端部は、アイランド６１１におけるアイランド６１３側の端部に連なり、他方の端部は、アイランド６１３におけるアイランド６１１側の端部に連なっている。連結部６１５は、アイランド６１１，１６３と略同じ厚みとされ、Ｚ方向において同一面内に配置されている。連結部６１５において、スイッチング素子７００Ｈ，７０１Ｈと反対の放熱面６１５ａが、封止樹脂体５０の裏面５０ｂから露出されている。これにより、放熱面６１５ａからスイッチング素子７００Ｈ，７０１Ｈの熱を逃がすこともできる。 The islands 611 and 613 are integrated by the connecting portion 615 as an island 61 on the upper arm side. The connecting portion 615 extends in the X direction, and is disposed between the islands 611 and 613. One end of the connecting portion 615 is continuous with the end of the island 611 on the island 613 side, and the other end is continuous with the end of the island 613 on the island 611 side. The connecting portion 615 has substantially the same thickness as the islands 611 and 163, and is disposed in the same plane in the Z direction. In the connecting portion 615, the heat release surface 615a opposite to the switching elements 700H and 701H is exposed from the back surface 50b of the sealing resin body 50. Thus, the heat of the switching elements 700H and 701H can be dissipated from the heat dissipation surface 615a.
　連結部６１５には、Ｙ方向の両端に切り欠き６１５ｂが設けられ、これにより、連結部６１５は、アイランド６１１，６１３それぞれの端部中央に連なっている。切り欠き６１５ｂは両側でほぼ同じ深さとされ、連結部６１５を含むアイランド６１１，６１３は、略Ｈ字形状をなしている。すなわち、一体化されたアイランド６１１，６１３及び連結部６１５において、真ん中の連結部６１５が幅狭部とされ、連結部６１５を挟むアイランド６１１，６１３が幅広部とされている。連結部６１５には、２本のボンディングワイヤ４１が接続されている。アイランド６１は、Ｘ方向において線対称配置とされている。 In the connecting portion 615, notches 615b are provided at both ends in the Y direction, whereby the connecting portion 615 is continuous with the centers of the end portions of the islands 611 and 613. The notches 615 b have substantially the same depth on both sides, and the islands 611 and 613 including the connecting portion 615 have a substantially H shape. That is, in the integrated islands 611 and 613 and the connecting portion 615, the middle connecting portion 615 is a narrow portion, and the islands 611 and 613 sandwiching the connecting portion 615 are a wide portion. Two bonding wires 41 are connected to the connecting portion 615. The islands 61 are arranged in line symmetry in the X direction.
　配線部６２は、第１実施形態同様、アイランド６１１，６１２を接続する配線部６２０と、アイランド６１２と負極端子６３Ｅ１を接続する配線部６２１と、アイランド６１３，６１４を接続する配線部６２２と、アイランド６１４と負極端子６３Ｅ２を接続する配線部６２３を有している。 As in the first embodiment, the wiring unit 62 has a wiring unit 620 for connecting the islands 611 and 612, a wiring unit 621 for connecting the island 612 and the negative terminal 63E1, a wiring unit 622 for connecting the islands 613 and 614, and an island. A wiring portion 623 for connecting the 614 and the negative electrode terminal 63E2 is provided.
　配線部６２０は、アイランド６１２における信号端子６４とは反対の端部に連なっている。配線部６２０は、アイランド６１２においてアイランド６１０側とは反対の端に連なっている。配線部６２０はＹ方向に延設され、その先端部分がＸ方向においてアイランド６１１との間に所定の間隙を有しつつ、アイランド６１１と並んで配置されている。配線部６２０は、アイランド６１１に対してＸ方向外側に配置されている。配線部６２０の先端には、出力端子６３Ｐ１が連なっている。すなわち、本実施形態では、Ｙ方向において、配線部６２０の一端にアイランド６１２が連なり、他端に出力端子６３Ｐ１が連なっている。配線部６２０において、アイランド６１２側は幅狭部とされ、出力端子６３Ｐ１側は幅広部とされている。 The wiring portion 620 is connected to the end of the island 612 opposite to the signal terminal 64. The wiring portion 620 is connected to the end of the island 612 opposite to the island 610 side. The wiring portion 620 is extended in the Y direction, and its tip portion is arranged in parallel with the island 611 while having a predetermined gap with the island 611 in the X direction. The wiring portion 620 is disposed outside the island 611 in the X direction. At the tip of the wiring portion 620, an output terminal 63P1 is connected. That is, in the present embodiment, in the Y direction, the island 612 is connected to one end of the wiring portion 620, and the output terminal 63P1 is connected to the other end. In the wiring portion 620, the island 612 side is a narrow portion, and the output terminal 63P1 side is a wide portion.
　配線部６２１は、負極端子６３Ｅ１に連なっている。配線部６２１は負極端子６３Ｅ１からＹ方向に延びて、その先端部がＸ方向においてアイランド６１２との間に所定の間隙を有しつつ、アイランド６１２と並んで配置されている。配線部６２１は、アイランド６１２に対してＸ方向外側に配置されている。配線部６２１は、Ｙ方向において配線部６２０の幅広部と対向している。 The wiring portion 621 is connected to the negative electrode terminal 63E1. The wiring portion 621 extends from the negative electrode terminal 63E1 in the Y direction, and its tip end portion is disposed side by side with the island 612 while having a predetermined gap with the island 612 in the X direction. The wiring portion 621 is disposed outside the island 612 in the X direction. The wiring portion 621 is opposed to the wide portion of the wiring portion 620 in the Y direction.
　配線部６２２は、アイランド６１４における信号端子６４とは反対の端部に連なっている。配線部６２２は、アイランド６１４においてアイランド６１０側とは反対の端に連なっている。配線部６２２はＹ方向に延設され、その先端部分がＸ方向においてアイランド６１３との間に所定の間隙を有しつつ、アイランド６１３と並んで配置されている。配線部６２２は、アイランド６１３に対してＸ方向外側に配置されている。配線部６２２の先端には、出力端子６３Ｐ２が連なっている。すなわち、本実施形態では、Ｙ方向において、配線部６２２の一端にアイランド６１４が連なり、他端に出力端子６３Ｐ２が連なっている。配線部６２２において、アイランド６１４側は幅狭部とされ、出力端子６３Ｐ２側は幅広部とされている。 The wiring portion 622 is connected to the end of the island 614 opposite to the signal terminal 64. The wiring portion 622 is connected to the end of the island 614 opposite to the island 610 side. The wiring portion 622 is extended in the Y direction, and the tip portion thereof is disposed in parallel with the island 613 while having a predetermined gap with the island 613 in the X direction. The wiring portion 622 is disposed outside the island 613 in the X direction. At the tip of the wiring portion 622, an output terminal 63P2 is connected. That is, in the present embodiment, the island 614 is connected to one end of the wiring portion 622 in the Y direction, and the output terminal 63P2 is connected to the other end. In the wiring portion 622, the island 614 side is a narrow portion, and the output terminal 63P2 side is a wide portion.
　配線部６２３は、負極端子６３Ｅ２に連なっている。配線部６２３は負極端子６３Ｅ２からＹ方向に延びて、その先端部がＸ方向においてアイランド６１４との間に所定の間隙を有しつつ、アイランド６１４と並んで配置されている。配線部６２３は、アイランド６１４に対してＸ方向外側に配置されている。配線部６２３は、Ｙ方向において配線部６２２の幅広部と対向している。 The wiring portion 623 is connected to the negative electrode terminal 63E2. The wiring portion 623 extends from the negative electrode terminal 63E2 in the Y direction, and its tip end portion is disposed side by side with the island 614 while having a predetermined gap with the island 614 in the X direction. The wiring portion 623 is disposed outside the island 614 in the X direction. The wiring portion 623 is opposed to the wide portion of the wiring portion 622 in the Y direction.
　以上により、Ｙ方向におけるアイランド６１０の位置では、Ｘ方向において、配線部６２１、アイランド６１２、アイランド６１０、アイランド６１４、配線部６２３の順に並んで配置されている。また、Ｙ方向におけるアイランド６１１，６１３の位置では、Ｘ方向において、配線部６２０、アイランド６１１、アイランド６１３、配線部６２２の順に並んで配置されている。配線部６２は、Ｘ方向において線対称配置とされている。 As described above, at the position of the island 610 in the Y direction, the wiring portion 621, the island 612, the island 610, the island 614, and the wiring portion 623 are sequentially arranged in the X direction. Further, at the positions of the islands 611 and 613 in the Y direction, the wiring portion 620, the island 611, the island 613, and the wiring portion 622 are arranged in this order in the X direction. The wiring portions 62 are arranged in line symmetry in the X direction.
　図４１に示すように、配線部６２０～６２３の放熱面６２０ａ～６２３ａが、封止樹脂体５０の裏面５０ｂから露出されている。これにより、放熱面６２０ａ～６２３ａからも放熱することができる。配線部６２０～６２３のうち、放熱面６２０ａ～６２３ａを除く部分は、封止樹脂体５０によって封止されている。図４５などに示すように、配線部６２それぞれの側面には、封止樹脂体５０の剥離を抑制するために、凸部が設けられている。 As shown in FIG. 41, the heat radiation surfaces 620 a to 623 a of the wiring portions 620 to 623 are exposed from the back surface 50 b of the sealing resin body 50. Thus, heat can be dissipated from the heat dissipation surfaces 620a to 623a. The portions of the wiring portions 620 to 623 excluding the heat radiation surfaces 620 a to 623 a are sealed by the sealing resin body 50. As shown in FIG. 45 and the like, convex portions are provided on the side surfaces of the wiring portions 62 in order to suppress peeling of the sealing resin body 50.
　図４６及び図５２などに示すように、第１実施形態同様、アイランド６１及び配線部６２の部分が、主端子６３、信号端子６４、及びダミー端子６５の部分よりも厚肉とされている。図５３に示す破線間が、厚肉部分である。これにより、スイッチング素子７０及び駆動部８０の熱を効率よく放熱させることができる。また、封止樹脂体５０の硬化収縮にともなうリードフレーム６０の反りを抑制することができる。主端子６３及び信号端子６４が薄肉とされているため、打ち抜きや曲げ加工性を向上することができる。また、信号端子６４を狭ピッチ化することもできる。 As shown in FIGS. 46 and 52, as in the first embodiment, the portions of the island 61 and the wiring portion 62 are thicker than the portions of the main terminal 63, the signal terminal 64, and the dummy terminal 65. Between the broken lines shown in FIG. 53 are thick portions. Thus, the heat of the switching element 70 and the drive unit 80 can be dissipated efficiently. In addition, warpage of the lead frame 60 caused by curing and shrinkage of the sealing resin body 50 can be suppressed. Since the main terminals 63 and the signal terminals 64 are thin, punching and bending workability can be improved. In addition, the signal terminals 64 can be narrowed in pitch.
　主端子６３は、第１実施形態同様、正極端子６３Ｂ１，６３Ｂ２と、負極端子６３Ｅ１，６３Ｅ２と、出力端子６３Ｐ１，６３Ｐ２を有している。正極端子６３Ｂ１は、スイッチング素子７００Ｈのアイランド６１１に連なっている。正極端子６３Ｂ１は、アイランド６１１における信号端子６４とは反対の端部からＹ方向に延設されて封止樹脂体５０の側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。 The main terminal 63 has positive electrode terminals 63B1 and 63B2, negative electrode terminals 63E1 and 63E2, and output terminals 63P1 and 63P2, as in the first embodiment. The positive electrode terminal 63B1 is continuous with the island 611 of the switching element 700H. The positive electrode terminal 63B1 extends from the end of the island 611 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c of the sealing resin body 50, is bent outside the sealing resin body 50, and extends in the Z direction. It extends upward.
　正極端子６３Ｂ２は、スイッチング素子７０１Ｈのアイランド６１３に連なっている。正極端子６３Ｂ２は、アイランド６１３における信号端子６４とは反対の端部からＹ方向に延設されて側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。 The positive electrode terminal 63B2 is connected to the island 613 of the switching element 701H. The positive electrode terminal 63B2 extends from the end of the island 613 opposite to the signal terminal 64 in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
　本実施形態では、アイランド６１１，６１３同様、正極端子６３Ｂ１，６３Ｂ２も一体化されている。図３９及び図５３などに示すように、正極端子６３Ｂ１，６３Ｂ２は、基部６３Ｂａと、接続部６３Ｂｂと、連結部６３Ｂｃをそれぞれ有している。そして、連結部６３Ｂｄにより、正極端子６３Ｂ１，６３Ｂ２が一体化されている。 In the present embodiment, as with the islands 611 and 613, the positive electrode terminals 63B1 and 63B2 are also integrated. As shown in FIGS. 39 and 53, the positive electrode terminals 63B1 and 63B2 each have a base 63Ba, a connection portion 63Bb, and a connection portion 63Bc. The positive electrode terminals 63B1 and 63B2 are integrated by the connecting portion 63Bd.
　正極端子６３Ｂ１，Ｂ２それぞれにおいて、基部６３Ｂａは、対応するアイランド６１１，６１３に連なる部分である。基部６３Ｂａは、対応するアイランド６１１，６１３のＸ方向中心よりも連結部６１５寄りの位置で、アイランド６１１，６１３に連なっている。図４６などに示すように、正極端子６３Ｂ１，Ｂ２は、それぞれの基部６３Ｂａの途中に屈曲部を有している。基部６３Ｂａは、タイバーカット前の状態でＹ方向に延設されており、タイバーカット及びフォーミング後の状態で、ＹＺ面において略Ｌ字状をなしている。 In each of the positive electrode terminals 63B1 and B2, the base 63Ba is a portion connected to the corresponding island 611 or 613. The base 63 </ b> Ba is continuous with the islands 611 and 613 at a position closer to the connecting portion 615 than the center in the X direction of the corresponding islands 611 and 613. As shown in FIG. 46 etc., positive electrode terminal 63B1, B2 has a bending part in the middle of each base 63Ba. The base portion 63Ba is extended in the Y direction before the tie bar cut, and in the state after the tie bar cut and forming, has a substantially L shape in the YZ plane.
　接続部６３Ｂｂは、正極バスバー２７Ｂとの接続部分である。アイランド６１１，６１３を一体化しながらも、接続部６３Ｂｂを２つに分けている。Ｘ方向において、接続部６３Ｂｂ間の距離は、基部６３Ｂａ間の距離及びスイッチング素子７００Ｈ，７０１Ｈ間の距離のいずれよりも長くされている。連結部６３Ｂｃは、基部６３Ｂａと接続部６３Ｂｂを連結している。連結部６３Ｂｃによって、接続部６３Ｂｂが対応する基部６３ＢａよりもＸ方向外側に引き出されている。 The connection portion 63Bb is a connection portion with the positive electrode bus bar 27B. While integrating the islands 611 and 613, the connecting portion 63Bb is divided into two. In the X direction, the distance between the connection portions 63Bb is longer than any of the distance between the base portions 63Ba and the distance between the switching elements 700H and 701H. The connecting portion 63Bc connects the base portion 63Ba and the connecting portion 63Bb. The connecting portion 63Bb is drawn outward in the X direction from the corresponding base portion 63Ba by the connecting portion 63Bc.
　連結部６３Ｂｄは、Ｘ方向において隣り合う基部６３Ｂａ同士を連結している。連結部６３ＢｄはＸ方向に延設されている。連結部６３Ｂｄの一端は正極端子６３Ｂ１側の基部６３Ｂａに連なり、他端は正極端子６３Ｂ２側の基部６３Ｂａに連なっている。 The connecting portion 63Bd connects the base portions 63Ba adjacent to each other in the X direction. The connecting portion 63Bd extends in the X direction. One end of the connecting portion 63Bd is connected to the base 63Ba on the positive electrode terminal 63B1 side, and the other end is connected to the base 63Ba on the positive electrode terminal 63B2 side.
　出力端子６３Ｐ１は、正極端子６３Ｂ１に対してＸ方向外側に配置されている。出力端子６３Ｐ１は、上記したように、配線部６２０の一端に連なっている。出力端子６３Ｐ１は、Ｙ方向に延設されて正極端子６３Ｂ１と同じ側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。出力端子６３Ｐ２は、上記したように、配線部６２２の一端に連なっている。出力端子６３Ｐ２は、正極端子６３Ｂ２に対してＸ方向外側に配置されている。出力端子６３Ｐ２は、Ｙ方向に延設されて側面５０ｃから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。 The output terminal 63P1 is disposed on the outer side in the X direction with respect to the positive electrode terminal 63B1. The output terminal 63P1 is connected to one end of the wiring portion 620 as described above. The output terminal 63P1 extends in the Y direction, protrudes from the same side surface 50c as the positive electrode terminal 63B1, is bent outside the sealing resin body 50, and extends upward in the Z direction. The output terminal 63P2 is connected to one end of the wiring portion 622 as described above. The output terminal 63P2 is disposed on the outer side in the X direction with respect to the positive electrode terminal 63B2. The output terminal 63P2 extends in the Y direction, protrudes from the side surface 50c, is bent outside the sealing resin body 50, and extends upward in the Z direction.
　正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、Ｘ方向において、出力端子６３Ｐ１、正極端子６３Ｂ１、正極端子６３Ｂ２、出力端子６３Ｐ２の順に並んで配置されている。Ｘ方向において、出力端子６３Ｐ１と正極端子６３Ｂ１との距離、及び、出力端子６３Ｐ２と正極端子６３Ｂ２との距離は、正極端子６３Ｂ１，６３Ｂ２間の距離よりも短くされている。ここでの距離とは、対応するバスバー２７との接続部分での距離である。正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、ＹＺ面において略Ｌ字状をなしている。 The positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 are arranged in the order of the output terminal 63P1, the positive electrode terminal 63B1, the positive electrode terminal 63B2 and the output terminal 63P2 in the X direction. In the X direction, the distance between the output terminal 63P1 and the positive electrode terminal 63B1 and the distance between the output terminal 63P2 and the positive electrode terminal 63B2 are shorter than the distance between the positive electrode terminals 63B1 and 63B2. The distance here is the distance at the connection portion with the corresponding bus bar 27. The positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 are substantially L-shaped in the YZ plane.
　正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、第１実施形態同様、タイバー痕６６ａ，６６ｂをそれぞれ有している。タイバー痕６６ａは、１段目のタイバー６６０ａの切断痕であり、タイバー痕６６ｂは、２段目のタイバー６６０ｂの切断痕である。正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、タイバー痕６６ａ，６６ｂの間に屈曲部を有している。 The positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 respectively have tie bar marks 66a and 66b as in the first embodiment. The tie bar mark 66 a is a cut mark of the tie bar 660 a of the first stage, and the tie bar mark 66 b is a cut mark of the tie bar 660 b of the second stage. The positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 have bent portions between tie bar marks 66a and 66b.
　負極端子６３Ｅ１，６３Ｅ２は、アイランド６１及び配線部６２を挟んで、正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２と反対側に配置されている。負極端子６３Ｅ１は、Ｙ方向に延設されて正極端子６３Ｂ１と反対の側面５０ｄから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。負極端子６３Ｅ２は、Ｙ方向に延設されて側面５０ｄから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。負極端子６３Ｅ１，６３Ｅ２も、ＹＺ面において略Ｌ字状をなしている。 The negative electrode terminals 63E1 and 63E2 are disposed on the opposite side of the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 with the island 61 and the wiring portion 62 interposed therebetween. The negative electrode terminal 63E1 extends in the Y direction, protrudes from the side surface 50d opposite to the positive electrode terminal 63B1, is bent outside the sealing resin body 50, and extends upward in the Z direction. The negative electrode terminal 63E2 extends in the Y direction, protrudes from the side surface 50d, is bent outside the sealing resin body 50, and extends upward in the Z direction. The negative electrode terminals 63E1 and 63E2 are also substantially L-shaped in the YZ plane.
　負極端子６３Ｅ１は、配線部６２１における信号端子６４側の端部に連なっている。負極端子６３Ｅ２は、配線部６２３における信号端子６４側の端部に連なっている。負極端子６３Ｅ１，６３Ｅ２は、連結部６９によってアイランド６１０に連結されている。連結部６９は、Ｘ方向に延設されている。連結部６９におけるＸ方向の中央にアイランド６１０が連なっている。連結部６９は、アイランド６１０における信号端子６４側の端部に連なっている。連結部６９の一端に負極端子６３Ｅ１が連なり、他端に負極端子６３Ｅ２が連なっている。連結部６９は、主端子６３及び信号端子６４同様、薄肉とされている。連結部６９の幅は、信号端子６４の幅よりも狭くされている。負極端子６３Ｅ１，６３Ｅ２のアイランド６１側の端部において、Ｘ方向内側に連結部６９が連なり、Ｘ方向外側に対応する配線部６２１，６２３が連なっている。 The negative electrode terminal 63E1 is continued to the end of the wiring portion 621 on the signal terminal 64 side. The negative electrode terminal 63E2 is continued to the end of the wiring portion 623 on the signal terminal 64 side. The negative electrode terminals 63E1 and 63E2 are connected to the island 610 by the connecting portion 69. The connecting portion 69 is extended in the X direction. An island 610 is continuous at the center of the connecting portion 69 in the X direction. The connecting portion 69 is continuous with the end of the island 610 on the signal terminal 64 side. The negative electrode terminal 63E1 is connected to one end of the connecting portion 69, and the negative electrode terminal 63E2 is connected to the other end. The connecting portion 69 is thin like the main terminal 63 and the signal terminal 64. The width of the connecting portion 69 is narrower than the width of the signal terminal 64. At the end of the negative electrode terminals 63E1 and 63E2 on the side of the island 61, the connecting portion 69 is continuous on the inner side in the X direction and the wiring portions 621 and 623 corresponding to the outer side in the X direction are continuous.
　このように、負極端子６３Ｅ１，６３Ｅ２が信号端子６４側に配置され、連結部６９により、アイランド６１０がＸ方向両側で負極端子６３Ｅ１，６３Ｅ２に吊られている。この配置により、アイランド６１０の保持強度を向上することができる。また、連結部６９により保持強度を確保できるため、ダミー端子によって補強する構造に較べて、信号端子６４の本数を増やすこともできる。 As described above, the negative electrode terminals 63E1 and 63E2 are disposed on the signal terminal 64 side, and the connection portion 69 suspends the island 610 from the negative electrode terminals 63E1 and 63E2 on both sides in the X direction. This arrangement can improve the retention strength of the island 610. Further, since the holding strength can be secured by the connecting portion 69, the number of the signal terminals 64 can be increased as compared with the structure reinforced by the dummy terminals.
　負極端子６３Ｅ１，６３Ｅ２も、タイバー痕６６ａ，６６ｂをそれぞれ有している。タイバー痕６６ａは、１段目のタイバー６６１ａの切断痕であり、タイバー痕６６ｂは、２段目のタイバー６６１ｂの切断痕である。負極端子６３Ｅ１，６３Ｅ２は、タイバー痕６６ａ，６６ｂの間に屈曲部を有している。 The negative electrode terminals 63E1 and 63E2 also have tie bar marks 66a and 66b, respectively. The tie bar mark 66a is a cut mark of the tie bar 661a of the first stage, and the tie bar mark 66b is a cut mark of the tie bar 661 b of the second stage. Negative electrode terminal 63E1, 63E2 has a bending part between tie bar mark 66a, 66b.
　上記したように、上アーム側において、アイランド６１１，６１３が連結部６１５を介して同電位とされている。また、下アーム側において、配線部６２１，６２３が連結部６９を介して同電位とされている。しかしながら、半導体モジュール４０は、２つの正極端子６３Ｂ１，６３Ｂ２と、２つの負極端子６３Ｅ１，６３Ｅ２を有している。このため、たとえば正極端子６３Ｂ１，６３Ｂ２の一方に溶接外れが生じても、他方により電気的な接続を維持することができる。正極端子や負極端子を１本のみ有する構成に較べて、溶接外れによってスイッチング素子７０などが故障するのを抑制することができる。 As described above, on the upper arm side, the islands 611 and 613 are set to the same potential through the connecting portion 615. Further, on the lower arm side, the wiring portions 621 and 623 are set to the same potential via the connecting portion 69. However, the semiconductor module 40 has two positive electrode terminals 63B1 and 63B2 and two negative electrode terminals 63E1 and 63E2. Therefore, even if welding failure occurs at one of the positive electrode terminals 63B1 and 63B2, for example, the other can maintain the electrical connection. Compared with the structure which has only one positive electrode terminal and one negative electrode terminal, it can suppress that switching element 70 etc. fail by welding detachment.
　複数の信号端子６４は、Ｘ方向に並んで配置されている。本実施形態では、信号端子６４として、異常通知用の信号端子６４２，６４３と、テスト端子６４４を有している。信号端子６４２は、整流回路部３０を構成する他の半導体モジュール４０に対して、スイッチング素子７０の異常を通知するための端子である。信号端子６４３は、レギュレータに対して、スイッチング素子７０の異常を通知するための端子である。信号端子６４２，６４３は、Ｙ方向に延設されて側面５０ｄから突出し、封止樹脂体５０の外部で屈曲されて、Ｚ方向上方に延びている。信号端子６４２，６４３は、ＹＺ面において略Ｌ字状をなしている。 The plurality of signal terminals 64 are arranged side by side in the X direction. In the present embodiment, signal terminals 642 and 643 for error notification and a test terminal 644 are provided as the signal terminals 64. The signal terminal 642 is a terminal for notifying the other semiconductor modules 40 constituting the rectifier circuit unit 30 that the switching element 70 is abnormal. The signal terminal 643 is a terminal for notifying the regulator of an abnormality of the switching element 70. The signal terminals 642 and 643 extend in the Y direction, project from the side surface 50 d, are bent outside the sealing resin body 50, and extend upward in the Z direction. The signal terminals 642 and 643 are substantially L-shaped in the YZ plane.
　テスト端子６４４は、整流回路部３０のテスト、たとえば製品出荷前の電気特性検査に用いられる。テスト端子６４４は、Ｙ方向に延設されて側面５０ｄから突出している。テスト端子６４４は、Ｙ方向において１段目のタイバー痕６６ａとほぼ同じ位置まで延設されている。このため、テスト端子６４４は、屈曲部を有していない。１６本の信号端子６４のうち、２本が異常通知用の信号端子６４２，６４３であり、残りの１４本がテスト端子６４４である。両端から２本目が信号端子６４２，６４３とされている。 The test terminal 644 is used to test the rectifier circuit unit 30, for example, to inspect the electrical characteristics before shipping the product. The test terminal 644 extends in the Y direction and protrudes from the side surface 50 d. The test terminal 644 is extended to substantially the same position as the first stage tie bar mark 66 a in the Y direction. Therefore, the test terminal 644 does not have a bend. Of the sixteen signal terminals 64, two are signal terminals 642 and 643 for error notification, and the remaining 14 are test terminals 644. The second terminal from both ends is used as signal terminals 642 and 643.
　図４７及び図４８などに示すように、隣り合うテスト端子６４４間には、ノイズ吸収用のコンデンサ４５が配置されている。コンデンサ４５は、セラミック製のチップコンデンサである。コンデンサ４５の電極は、はんだ４２によって、テスト端子６４４に接続されている。本実施形態では、４つのコンデンサ４５が配置されている。 As shown in FIGS. 47 and 48, etc., a capacitor 45 for noise absorption is arranged between the adjacent test terminals 644. The capacitor 45 is a ceramic chip capacitor. The electrode of the capacitor 45 is connected to the test terminal 644 by the solder 42. In the present embodiment, four capacitors 45 are arranged.
　図４２などに示すように、ＺＸ面において、側面５０ｄから突出する信号端子６４２，６４３の突出先端である接続部は、側面５０ｃから突出する正極端子６３Ｂ１，６３Ｂ２のバスバー２７Ｂとの接続部６３Ｂｂ及び出力端子６３Ｐ１，６３Ｐ２のバスバー２７Ｐ１，２７Ｐ２との接続部と重ならない位置とされている。これにより、側面５０ｄ側が下側、側面５０ｃが上側となるように半導体モジュール４０を置いた状態で、側面５０ｃ側から溶接電極を用いて信号端子６４２，６４３を溶接することができる。したがって、組み付け性を向上することができる。 As shown in FIG. 42 and the like, in the ZX plane, connection portions which are projecting tips of the signal terminals 642 and 643 protruding from the side surface 50d are connection portions 63Bb of the positive electrode terminals 63B1 and 63B2 protruding from the side surface 50c to the bus bar 27B and The positions where the output terminals 63P1 and 63P2 do not overlap with the connection portions with the bus bars 27P1 and 27P2 are set. Thereby, the signal terminals 642 and 643 can be welded from the side surface 50c using the welding electrode in a state where the semiconductor module 40 is placed so that the side surface 50d side is the lower side and the side surface 50c is the upper side. Therefore, the assemblability can be improved.
　テスト端子６４４の１つは、連結部６９を介してアイランド６１０に連なる端子６４４ａである。このテスト端子６４４ａは、テスト時にグランド電位（ＧＮＤ）とされる。テスト端子６４４ａは、ボンディングワイヤ４１によって、駆動部８０のパッド８１と接続されている。ボンディングワイヤ４１が他の電位の部分を跨がなくてもよいため、ショートが発生するのを抑制することができる。 One of the test terminals 644 is a terminal 644 a connected to the island 610 via the connecting portion 69. The test terminal 644a is set to the ground potential (GND) at the time of test. The test terminal 644 a is connected to the pad 81 of the drive unit 80 by the bonding wire 41. Since the bonding wire 41 does not have to straddle other potential portions, the occurrence of short circuit can be suppressed.
　また、グランド電位を確保するために、Ｘ方向に延設されて撓みやすい連結部６９ではなく、テスト端子６４４ａにボンディングしている。テスト端子６４４ａは、タイバー６６１ａ，６６１ｂに連結されている。テスト端子６４４ａは、連結部６９よりも幅が広くされるとともに、他の信号端子６４よりも幅が広くされている。したがって、グランド電位を確保しつつ、ボンディング性を向上することができる。 Further, in order to secure the ground potential, bonding is performed to the test terminal 644a, not to the connection portion 69 which is extended in the X direction and is flexible. The test terminal 644a is connected to the tie bars 661a and 661b. The test terminal 644 a is wider than the connecting portion 69 and wider than the other signal terminals 64. Therefore, the bondability can be improved while securing the ground potential.
　図４８及び図５３などに示すように、アイランド６１０とテスト端子６４４ａとの間の連結部６９に、貫通孔６９ａが設けられている。貫通孔６９ａは、Ｘ方向においてテスト端子６４４ａを跨ぐように設けられている。封止樹脂体５０は、貫通孔６９ａを貫通し、薄肉とされた連結部６９の両側に配置されている。テスト端子６４４ａに接続されたボンディングワイヤ４１は、貫通孔６９ａ上を通過して、パッド８１に接続されている。これによれば、ロックホール効果により、駆動部８０側の剥離が、テスト端子６４４ａにおけるボンディングワイヤ４１の接続部まで進展するのを抑制することができる。したがって、ボンディングワイヤ４１の接続信頼性を向上することができる。 As shown in FIGS. 48 and 53, a through hole 69a is provided in the connecting portion 69 between the island 610 and the test terminal 644a. The through hole 69a is provided to straddle the test terminal 644a in the X direction. The sealing resin body 50 passes through the through holes 69 a and is disposed on both sides of the thin-walled connecting portion 69. The bonding wire 41 connected to the test terminal 644 a passes over the through hole 69 a and is connected to the pad 81. According to this, due to the lock hole effect, it is possible to suppress the exfoliation on the drive unit 80 side from progressing to the connection portion of the bonding wire 41 in the test terminal 644a. Therefore, the connection reliability of the bonding wire 41 can be improved.
　図４８及び図５３などに示すように、一部の信号端子６４、具体的には両端から数本の信号端子６４については、ボンディングワイヤ４１が接続される側の端部が、ＸＹ面内において駆動部８０側に傾いている。これにより、駆動部８０から離れた位置の信号端子６４について、ボンディングワイヤ４１の長さを短くすることができる。したがって、封止樹脂体５０の成形時において、ボンディングワイヤ４１に不良が生じるのを抑制することができる。また、ワイヤ長を短くすることで、ボンディングワイヤ４１の接続強度を向上することができる。また、超音波接合時に、共振が生じるのを抑制することができる。 As shown in FIG. 48 and FIG. 53 etc., with regard to some signal terminals 64, specifically, several signal terminals 64 from both ends, the end on the side to which the bonding wire 41 is connected is in the XY plane It inclines to the drive part 80 side. Thereby, the length of the bonding wire 41 can be shortened for the signal terminal 64 at a position away from the drive unit 80. Therefore, at the time of molding of the sealing resin body 50, generation of defects in the bonding wire 41 can be suppressed. Further, by shortening the wire length, the connection strength of the bonding wire 41 can be improved. In addition, generation of resonance can be suppressed at the time of ultrasonic bonding.
　第１実施形態同様、主端子６３である負極端子６３Ｅ１，６３Ｅ２の間にすべての信号端子６４が集約されている。したがって、Ｘ方向において外部接続用端子の配置スペースを小さくすることができる。すなわち、無駄なスペースを減らし、半導体モジュール４０の体格を小型化することができる。 As in the first embodiment, all the signal terminals 64 are integrated between the negative terminals 63E1 and 63E2 which are the main terminals 63. Therefore, the arrangement space of the external connection terminal can be reduced in the X direction. That is, waste space can be reduced and the size of the semiconductor module 40 can be miniaturized.
　第１実施形態同様、リードフレーム６０において、ボンディングワイヤ４１の接続部が平坦とされている。アイランド６１２，６１４、連結部６１５、及び信号端子６４におけるボンディングワイヤ４１の接続部は、いずれも叩くことで平坦とされている。これにより、ボンディングワイヤ４１の接続信頼性を向上することができる。また、バリを叩いて潰し、ボンディング時の異物噛み込みを抑制することもできる。 As in the first embodiment, in the lead frame 60, the connection portion of the bonding wire 41 is flat. The connection portions of the bonding wires 41 at the islands 612 and 614, the connection portion 615, and the signal terminal 64 are all flattened by tapping. Thereby, the connection reliability of the bonding wire 41 can be improved. In addition, burrs can be hit and crushed to suppress foreign matter biting during bonding.
　ダミー端子６５は、図４０などに示すように、Ｙ方向に延設されて封止樹脂体５０の側面５０ｃから２本突出している。ダミー端子６５の１つは、配線部６２０におけるアイランド６１２とは反対の端部からＹ方向に延設されている。ダミー端子６５のＸ方向外側に、同じ配線部６２０に連なる出力端子６３Ｐ１が配置されている。別のダミー端子６５は、配線部６２２におけるアイランド６１４とは反対の端部からＹ方向に延設されている。ダミー端子６５のＸ方向外側に、同じ配線部６２２に連なる出力端子６３Ｐ２が配置されている。 As shown in FIG. 40 and the like, the dummy terminals 65 are extended in the Y direction and project two from the side surface 50 c of the sealing resin body 50. One of the dummy terminals 65 is extended in the Y direction from the end of the wiring portion 620 opposite to the island 612. An output terminal 63P1 connected to the same wiring portion 620 is disposed outside the dummy terminal 65 in the X direction. Another dummy terminal 65 is extended in the Y direction from the end of the wiring portion 622 opposite to the island 614. An output terminal 63P2 connected to the same wiring portion 622 is disposed outside the dummy terminal 65 in the X direction.
　ダミー端子６５は、タイバーカット後の状態で、正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２のタイバー痕６６ａとＹ方向においてほぼ同じ位置まで延設されている。このため、ダミー端子６５は屈曲部を有していない。ダミー端子６５の幅は、主端子６３の幅よりも狭くされている。 The dummy terminal 65 is extended to substantially the same position in the Y direction as the tie bar mark 66a of the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 in the state after the tie bar cut. Therefore, the dummy terminal 65 does not have a bend. The width of the dummy terminal 65 is smaller than the width of the main terminal 63.
　（スイッチング素子）
　スイッチング素子７０は縦型構造をなしており、第１実施形態同様、アイランド６１とは反対の面にパッド７１及びソース電極７２が形成されている。また、感温ダイオードが一体的に形成されている。図４５及び図４７に示すように、スイッチング素子７０のドレイン電極は、はんだ４２を介して対応するアイランド６１と接続されている。ソース電極７２は、はんだ４２を介して、対応する架橋部材９０と接続されている。 (Switching element)
The switching element 70 has a vertical structure, and the pad 71 and the source electrode 72 are formed on the surface opposite to the island 61 as in the first embodiment. In addition, a temperature sensitive diode is integrally formed. As shown in FIGS. 45 and 47, the drain electrode of the switching element 70 is connected to the corresponding island 61 via the solder 42. Source electrode 72 is connected to corresponding bridge member 90 via solder 42.
　スイッチング素子７０は、平面矩形状をなしている。図４８及び図５３に示すように、パッド７１は、スイッチング素子７０の１つの辺、具体的には駆動部８０との対向辺に沿って配置されている。スイッチング素子７０は３つのパッド７１を有しており、ゲート電極用、感温ダイオードのアノード用、カソード用の順に並んで配置されている。 The switching element 70 has a planar rectangular shape. As shown in FIGS. 48 and 53, the pad 71 is disposed along one side of the switching element 70, specifically, the side opposite to the drive unit 80. The switching element 70 has three pads 71, which are arranged in order of a gate electrode, an anode of a temperature sensitive diode, and a cathode.
　上アーム側のスイッチング素子７００Ｈ，７０１Ｈは、対応するアイランド６１１，６１３同様、Ｘ方向において線対称配置とされている。スイッチング素子７００Ｈ，７０１Ｈは、パッド７１の並び方向がＸ方向となるように配置されている。下アーム側のスイッチング素子７００Ｌ，７０１Ｌは、対応するアイランド６１２，６１４同様、Ｘ方向において線対称配置とされている。スイッチング素子７００Ｌ，７０１Ｌは、パッド７１の並び方向がＹ方向となるように配置されている。Ｘ方向において、スイッチング素子７００Ｌ、スイッチング素子７００Ｈ、スイッチング素子７０１Ｈ、スイッチング素子７０１Ｌの順に並んでいる。 Similar to the corresponding islands 611 and 613, the switching elements 700H and 701H on the upper arm side are arranged in line symmetry in the X direction. The switching elements 700H and 701H are arranged such that the arrangement direction of the pads 71 is the X direction. The lower arm side switching elements 700L and 701L are arranged in line symmetry in the X direction as in the corresponding islands 612 and 614. The switching elements 700L and 701L are arranged such that the arrangement direction of the pads 71 is the Y direction. In the X direction, the switching element 700L, the switching element 700H, the switching element 701H, and the switching element 701L are arranged in this order.
　第１実施形態同様、スイッチング素子７０の並び順と、スイッチング素子７０のドレイン電極に接続される正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２の並び順が一致している。また、主端子６３及び信号端子６４は、相対する側面５０ｃ，５０ｄのみから突出している。これにより、リードフレーム６０のレイアウトを簡素化し、半導体モジュール４０の体格を小型化することができる。また、バスバー２７との接続構造を簡素化することができる。 As in the first embodiment, the arrangement order of the switching element 70 and the arrangement order of the positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 connected to the drain electrode of the switching element 70 coincide with each other. Further, the main terminal 63 and the signal terminal 64 protrude only from the opposite side surfaces 50c and 50d. Thereby, the layout of the lead frame 60 can be simplified, and the size of the semiconductor module 40 can be miniaturized. Further, the connection structure with the bus bar 27 can be simplified.
　（駆動部）
　本実施形態の駆動部８０は、駆動信号を生成する駆動回路を有している。駆動部８０は、ＡＳＩＣなどのＩＣチップとして構成されている。駆動部８０は、スイッチング素子７０を駆動させるだけでなく、オンオフを制御するため、制御ＩＣとも称される。図４７に示すように、駆動部８０は、導電性接着材４３を介してアイランド６１０に固定されている。駆動部８０におけるアイランド６１０への固定面と反対の面には、複数のパッド８１が形成されている。 (Drive part)
The drive unit 80 of the present embodiment has a drive circuit that generates a drive signal. The drive unit 80 is configured as an IC chip such as an ASIC. The driving unit 80 is also referred to as a control IC in order to control ON / OFF as well as driving the switching element 70. As shown in FIG. 47, the drive unit 80 is fixed to the island 610 via the conductive adhesive 43. A plurality of pads 81 are formed on the surface of the drive unit 80 opposite to the surface fixed to the island 610.
　図５３に示すように、パッド８１の一部は、ボンディングワイヤ４１を介して、スイッチング素子７０のパッド７１に接続されている。別のパッド８１は、ボンディングワイヤ４１を介して、連結部６１５、すなわちスイッチング素子７００Ｈ，７０１Ｈのドレインに接続されている。別のパッド８１は、ボンディングワイヤ４１を介して、アイランド６１２，６１４に接続されている。パッド８１の残りは、ボンディングワイヤ４１を介して、信号端子６４に接続されている。 As shown in FIG. 53, a part of the pad 81 is connected to the pad 71 of the switching element 70 via the bonding wire 41. Another pad 81 is connected to the connection portion 615, that is, the drains of the switching elements 700H and 701H via the bonding wire 41. Another pad 81 is connected to the islands 612 and 614 via bonding wires 41. The rest of the pad 81 is connected to the signal terminal 64 through the bonding wire 41.
　駆動部８０の駆動回路は、アイランド６１２，６１４の電位、すなわち回転電機部１０への出力電圧である相電圧Ｐ１，Ｐ２に基づいて、スイッチング素子７０のオンオフを制御する。駆動部８０は、第１実施形態同様、スイッチング素子７０の保護するための回路と、スイッチング素子７０の異常を判定する判定回路と、判定結果を、信号端子６４２，６４３を通じて制御回路部２６に外部に通知する通知回路を有している。駆動部８０の詳細については後述する。 The drive circuit of the drive unit 80 controls the on / off of the switching element 70 based on the potentials of the islands 612 and 614, that is, phase voltages P1 and P2 that are output voltages to the rotating electrical machine unit 10. As in the first embodiment, the drive unit 80 is externally connected to the control circuit unit 26 through the signal terminals 642 and 643, with a circuit for protecting the switching element 70, a determination circuit for determining an abnormality of the switching element 70, and the determination result. Has a notification circuit to notify to. The details of the drive unit 80 will be described later.
　駆動部８０は、平面略矩形状をなしている。駆動部８０は、Ｘ方向においてリードフレーム６０の中心線に対し、線対称配置とされている。下アーム側のスイッチング素子７００Ｌ，７０１Ｌは、駆動部８０に対して線対称配置とされている。駆動部８０は、下アーム側のスイッチング素子７００Ｌ，７０１Ｈの間に配置されている。スイッチング素子７００Ｈ，７０１Ｈのパッド７１は、アイランド６１０よりもＸ方向外側に配置されている。 The drive unit 80 has a substantially rectangular planar shape. The drive units 80 are arranged in line symmetry with respect to the center line of the lead frame 60 in the X direction. The switching elements 700 L and 701 L on the lower arm side are arranged in line symmetry with respect to the drive unit 80. The driving unit 80 is disposed between the lower arm side switching elements 700L and 701H. The pads 71 of the switching elements 700H and 701H are disposed outside the island 610 in the X direction.
　（ボンディングワイヤを考慮した配置）
　第１実施形態同様、４つのスイッチング素子７０が、駆動部８０の周りに配置されている。これにより、パッド７１，８１を接続するボンディングワイヤ４１の長さを短くすることができる。したがって、封止樹脂体５０を成形する際に、ボンディングワイヤ４１に不良が生じるのを抑制することができる。また、無駄なスペースを低減し、半導体モジュール４０の体格を小型化することもできる。 (Arrangement considering bonding wire)
As in the first embodiment, four switching elements 70 are disposed around the drive unit 80. Thereby, the length of the bonding wire 41 connecting the pads 71 and 81 can be shortened. Therefore, when molding the sealing resin body 50, generation of defects in the bonding wire 41 can be suppressed. In addition, waste space can be reduced, and the size of the semiconductor module 40 can be reduced.
　駆動部８０は平面略矩形状をなしており、パッド８１がスイッチング素子７０それぞれとの対向辺に設けられている。スイッチング素子７０と接続されるパッド８１は、駆動部８０の連続する３辺に集約されている。これにより、ボンディングワイヤ４１の長さを短くすることができる。駆動部８０の残りの１辺には、信号端子６４と接続されるパッド８１のみが配置されている。 The driving unit 80 has a substantially rectangular planar shape, and the pads 81 are provided on the sides facing the switching elements 70 respectively. The pads 81 connected to the switching element 70 are integrated on three consecutive sides of the drive unit 80. Thereby, the length of the bonding wire 41 can be shortened. Only the pad 81 connected to the signal terminal 64 is disposed on the other side of the drive unit 80.
　スイッチング素子７０は、略正方形をなしている。パッド７１は、スイッチング素子７０の１つの辺の中央付近に、該辺に沿って並んで配置されている。このように、パッド７１を１つの辺の中央に配置したため、スイッチング素子７０を１種類のチップに共通化することができる。また、共通化しながらも、９０度配置が異なる上アーム側と下アーム側とで、パッド７１，８１に対してボンディングワイヤ４１を接続することができる。また、ボンディングワイヤ４１の長さを短くすることができる。 The switching element 70 has a substantially square shape. The pads 71 are arranged in the vicinity of the center of one side of the switching element 70 along the side. Thus, since the pad 71 is arranged at the center of one side, the switching element 70 can be made common to one type of chip. In addition, the bonding wires 41 can be connected to the pads 71 and 81 on the upper arm side and the lower arm side, which are different in the arrangement by 90 degrees, though being made common. Moreover, the length of the bonding wire 41 can be shortened.
　信号端子６４は、Ｙ方向において、駆動部８０の一辺側にまとめて配置されている。すべての信号端子６４は、駆動部８０に対して、上アーム側のスイッチング素子７００Ｈ，７０１Ｈとは反対側に配置されている。これによれば、信号端子６４も含めて、駆動部８０との接続構造を簡素化することができる。よって、ボンディングワイヤ４１の長さを短くし、半導体モジュール４０の体格を小型化することができる。 The signal terminals 64 are collectively arranged on one side of the drive unit 80 in the Y direction. All the signal terminals 64 are arranged on the opposite side of the drive unit 80 to the switching elements 700H and 701H on the upper arm side. According to this, the connection structure with the drive part 80 can be simplified including the signal terminal 64. Therefore, the length of the bonding wire 41 can be shortened, and the size of the semiconductor module 40 can be reduced.
　（熱を考慮した配置）
　第１実施形態同様、下アーム側のスイッチング素子７００Ｌ，７０１Ｌの間に駆動部８０が配置されている。また、Ｘ方向において、スイッチング素子７００Ｈ，７０１Ｈが線対称配置とされ、スイッチング素子７００Ｌ，７０１Ｌが線対称配置とされている。すなわち、４つのスイッチング素子７０が、ＸＹ面内において均等配置されている。そして、図４８に示すように、上アーム側のスイッチング素子７００Ｈ，７０１Ｈ間の距離をＬ１、下アーム側のスイッチング素子７００Ｌ，７０１Ｌ間の距離をＬ２とすると、距離Ｌ２のほうが距離Ｌ１よりも長くされている。 (Placement considering heat)
As in the first embodiment, the drive unit 80 is disposed between the lower arm side switching elements 700L and 701L. Further, in the X direction, the switching elements 700H and 701H are arranged in line symmetry, and the switching elements 700L and 701L are arranged in line symmetry. That is, the four switching elements 70 are equally arranged in the XY plane. Then, as shown in FIG. 48, assuming that the distance between the switching elements 700H and 701H on the upper arm side is L1 and the distance between the switching elements 700L and 701L on the lower arm side is L2, the distance L2 is longer than the distance L1. It is done.
　上記配置により、回転電機部１０（固定子巻線１２１）からのもらい熱によって高温となるスイッチング素子７００Ｌ，７０１Ｌ同士を遠ざけているため、スイッチング素子７００Ｌ，７０１Ｌ間の熱干渉を、スイッチング素子７００Ｈ，７０１Ｈ間の熱干渉よりも低減することができる。これにより、ＸＹ面において局所的な過熱を抑制し、すべてのスイッチング素子７０について、熱による性能低下を抑制することができる。 With the above arrangement, the switching elements 700L and 701L which are heated by heat received from the rotating electrical machine 10 (the stator winding 121) are kept away from each other, so that thermal interference between the switching elements 700L and 701L It can reduce than the thermal interference between 701H. Thereby, local overheating in the XY plane can be suppressed, and performance deterioration due to heat can be suppressed for all the switching elements 70.
　アイランド６１１～６１４の放熱面６１１ａ～６１４ａが、封止樹脂体５０から露出されている。したがって、スイッチング素子７０の熱を効果的に放熱することができる。また、アイランド６１０の放熱面６１０ａが、封止樹脂体５０から露出されている。これにより、駆動部８０の発生した熱及び駆動部８０の周りに配置されたスイッチング素子７０からのもらい熱を、効果的に放熱することができる。また、放熱性の向上により、駆動部８０を小型化することもできる。 The heat radiation surfaces 611 a to 614 a of the islands 611 to 614 are exposed from the sealing resin body 50. Therefore, the heat of switching element 70 can be dissipated effectively. In addition, the heat dissipation surface 610 a of the island 610 is exposed from the sealing resin body 50. Accordingly, the heat generated by the drive unit 80 and the heat received from the switching element 70 disposed around the drive unit 80 can be effectively dissipated. Moreover, the drive part 80 can also be miniaturized by the improvement of heat dissipation.
　配線部６２０，６２２の放熱面６２０ａ，６２２ａが、封止樹脂体５０から露出されている。これにより、スイッチング素子７００Ｌ，７０１Ｌの熱を、放熱面６２０ａ，６２２ａから逃がすことができる。特に本実施形態では、配線部６２０，６２２が出力端子６３Ｐ１，６３Ｐ２に連なっているため、回転電機部１０からのもらい熱を効果的に放熱することができる。これにより、スイッチング素子７００Ｌ，７０１Ｌに伝わる熱を低減することができる。 The heat radiation surfaces 620 a and 622 a of the wiring portions 620 and 622 are exposed from the sealing resin body 50. Thus, the heat of the switching elements 700L and 701L can be dissipated from the heat radiation surfaces 620a and 622a. In particular, in the present embodiment, since the wiring portions 620 and 622 are connected to the output terminals 63P1 and 63P2, the heat from the rotary electric machine portion 10 can be effectively dissipated. Thus, the heat transmitted to the switching elements 700L and 701L can be reduced.
　（架橋部材）
　本実施形態では、架橋部材９０として、クリップ９００を採用している。半導体モジュール４０は、４つのクリップ９００を有している。上記した線対称配置により、スイッチング素子７０のソース電極７２と配線部６２との接続距離が、互いに略等しくされている。このため、４つのクリップ９００を１種類に共通化し、部品点数を削減することができる（Ａ１７３）。 (Crosslinking member)
In the present embodiment, the clip 900 is employed as the bridging member 90. The semiconductor module 40 has four clips 900. The connection distance between the source electrode 72 of the switching element 70 and the wiring portion 62 is made substantially equal to each other by the above-described line symmetrical arrangement. Therefore, the four clips 900 can be made common to one type, and the number of parts can be reduced (A173).
　図４８及び図５３などに示すように、クリップ９００のそれぞれは、延設方向がＸ方向、幅方向がＹ方向となるように配置されている。 As shown in FIGS. 48 and 53 etc., each of the clips 900 is arranged so that the extending direction is the X direction and the width direction is the Y direction.
　（タイバーカット前のリードフレーム）
　図５３に示すように、タイバーカット前のリードフレーム６０は、アイランド６１、配線部６２、主端子６３、信号端子６４、ダミー端子６５、及び連結部６９に加えて、タイバー６６と、外枠６７と、連結部６８を有している。 (Lead frame before tie bar cut)
As shown in FIG. 53, in addition to the island 61, the wiring portion 62, the main terminal 63, the signal terminal 64, the dummy terminal 65, and the connecting portion 69, the lead frame 60 before the tie bar cut has a tie bar 66 and an outer frame 67. And a connecting portion 68.
　本実施形態のタイバー６６も、アイランド６１及び配線部６２をＹ方向において挟むように、一方側にタイバー６６０ａ，６６０ｂを有し、他方側にタイバー６６１ａ，６６１ｂを有している。各タイバー６６は、Ｘ方向両端で外枠６７に連結されている。 The tie bar 66 of this embodiment also has tie bars 660a and 660b on one side and tie bars 661a and 661b on the other side so as to sandwich the island 61 and the wiring portion 62 in the Y direction. Each tie bar 66 is connected to the outer frame 67 at both ends in the X direction.
　タイバー６６０ａは、正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２を外枠６７に連結している。タイバー６６０ａ，６６０ｂは、いずれも正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２それぞれのＹ方向への延設部分に連結されている。タイバー６６０ａ，６６０ｂは、たとえば正極端子６３Ｂ１，６３Ｂ２において、基部６３Ｂａに連結されている。タイバー６６０ａ，６６０ｂのそれぞれは、Ｘ方向に沿って一直線状に延設されている。正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、タイバー６６０ａ，６６０ｂの間で屈曲される。 The tie bar 660a connects the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 to the outer frame 67. The tie bars 660a and 660b are both connected to the extending portions in the Y direction of the positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2, respectively. The tie bars 660a and 660b are connected to the base 63Ba at, for example, the positive electrode terminals 63B1 and 63B2. Each of the tie bars 660a and 660b extends in a straight line along the X direction. The positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 are bent between the tie bars 660a and 660b.
　アイランド６１１，６１３は、対応する正極端子６３Ｂ１，６３Ｂ２の基部６３Ｂａを介して、タイバー６６０ａ，６６０ｂに連結されている。アイランド６１２，６１４及び配線部６２０，６２１は、対応するダミー端子６５及び出力端子６３Ｐ１，６３Ｐ２を介して、タイバー６６０ａ，６６０ｂに連結されている。 The islands 611 and 613 are connected to the tie bars 660a and 660b via the bases 63Ba of the corresponding positive electrode terminals 63B1 and 63B2. The islands 612 and 614 and the wiring portions 620 and 621 are connected to the tie bars 660 a and 660 b via the corresponding dummy terminals 65 and output terminals 63 P 1 and 63 P 2.
　正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２は、アイランド６１１，６１３及び配線部６２０，６２２からの延設の始点がＹ方向において同じ位置とされ、延設の終点、すなわち先端位置もＹ方向においてほぼ同じ位置とされている。 The positive terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 have extension points from the islands 611 and 613 and the wiring parts 620 and 622 at the same start position in the Y direction, and the end point of the extension Almost the same position.
　正極端子６３Ｂ１，６３Ｂ２は、連結部６８により、Ｙ方向においても外枠６７に連結されている。連結部６８は、基部６３Ｂａそれぞれの先端に連なっている。すなわち、正極端子６３Ｂ１，６３Ｂ２において、バスバー２７Ｂとの接続部６３Ｂｂとは異なる部分に連なっている。連結部６８は、Ｙ方向に延設されている。連結部６８のＸ方向外側に接続部６３Ｂｂが配置されている。図３９などに示すように、半導体モジュール４０は、タイバーカット後において、連結部６８の切断痕である連結痕６８ａを有している。 The positive electrode terminals 63B1 and 63B2 are connected to the outer frame 67 also in the Y direction by the connecting portion 68. The connecting portion 68 is connected to the tip of each of the base portions 63Ba. That is, in the positive electrode terminals 63B1 and 63B2, the connection portion 63Bb with the bus bar 27B is continued to a different portion. The connecting portion 68 extends in the Y direction. The connecting portion 63 </ b> Bb is disposed outside the connecting portion 68 in the X direction. As shown in FIG. 39 and the like, the semiconductor module 40 has a connection mark 68 a which is a cut mark of the connection portion 68 after the tie bar cut.
　出力端子６３Ｐ１，６３Ｐ２と同じ配線部６２０，６２２に連結されたダミー端子６５は、対応する出力端子６３Ｐ１，６３Ｐ２に沿って延設されている。ダミー端子６５は、Ｙ方向において外枠６７まで延設されている。 Dummy terminals 65 connected to the same wiring portions 620 and 622 as the output terminals 63P1 and 63P2 are extended along the corresponding output terminals 63P1 and 63P2. The dummy terminal 65 is extended to the outer frame 67 in the Y direction.
　タイバー６６１ａは、負極端子６３Ｅ１，６３Ｅ２及び信号端子６４を外枠６７に連結している。タイバー６６１ａ，６６１ｂは、いずれも負極端子６３Ｅ１，６３Ｅ２及び信号端子６４それぞれのＹ方向への延設部分に連結されている。負極端子６３Ｅ１，６３Ｅ２及び信号端子６４２は、タイバー６６１ａ，６６１ｂの間で屈曲される。 The tie bar 661a connects the negative electrode terminals 63E1 and 63E2 and the signal terminal 64 to the outer frame 67. The tie bars 661a and 661b are both connected to the extending portions of the negative terminals 63E1 and 63E2 and the signal terminal 64 in the Y direction. The negative terminals 63E1 and 63E2 and the signal terminal 642 are bent between the tie bars 661a and 661b.
　配線部６２１，６２３は、負極端子６３Ｅ１，６３Ｅ２を介してタイバー６６１ａ，６６１ｂに連結されている。アイランド６１０は、連結部６９及び負極端子６３Ｅ１，６３Ｅ２を介して、タイバー６６１ａ，６６１ｂに連結されている。アイランド６１０は、連結部６９及びテスト端子６４４ａを介して、タイバー６６１ａ，６６１ｂに連結されている。テスト端子６４４ａは、上記したように、アイランド６１０側とは反対で外枠６７に連結されている。 The wiring portions 621 and 623 are connected to the tie bars 661 a and 661 b via the negative electrode terminals 63E1 and 63E2. The island 610 is connected to the tie bars 661a and 661b via the connection portion 69 and the negative electrode terminals 63E1 and 63E2. The island 610 is connected to the tie bars 661 a and 661 b through the connecting portion 69 and the test terminal 644 a. The test terminal 644a is connected to the outer frame 67 opposite to the island 610 side as described above.
　主端子６３におけるバスバー２７との接続部は、外枠６７に対して連結されておらず、フリーとなっている。一方、信号端子６４は、Ｙ方向において外枠６７に連結されている。信号端子６４は、タイバーカット時に、外枠６７から切り離される。信号端子６４が外枠６７に連結されているため、成形時においてタイバー６６１ａ，６６１ｂの変形を抑制することができる。 The connection between the main terminal 63 and the bus bar 27 is not connected to the outer frame 67 and is free. On the other hand, the signal terminal 64 is connected to the outer frame 67 in the Y direction. The signal terminal 64 is disconnected from the outer frame 67 at the time of tie bar cutting. Since the signal terminal 64 is connected to the outer frame 67, deformation of the tie bars 661a and 661b can be suppressed at the time of molding.
　信号端子６４と負極端子６３Ｅ１，６３Ｅ２の間には、連結部６８がそれぞれ配置されている。連結部６８は、Ｙ方向に延設されており、一端がタイバー６６１ａに連結され、他端が外枠６７に連結されている。連結部６８は、タイバー６６とともに切り離される。この連結部６８により、外枠６７との吊り箇所が増えたため、成形時においてタイバー６６１ａ，６６１ｂの変形を抑制することができる。したがって、負極端子６３Ｅ１，６３Ｅ２及び信号端子６４２，６４３の位置精度を向上することができる。 Connecting portions 68 are respectively disposed between the signal terminal 64 and the negative electrode terminals 63E1 and 63E2. The connecting portion 68 extends in the Y direction, one end thereof is connected to the tie bar 661 a, and the other end is connected to the outer frame 67. The connecting portion 68 is separated along with the tie bar 66. The connecting portion 68 increases the number of hanging points with the outer frame 67, so that deformation of the tie bars 661a and 661b can be suppressed at the time of molding. Therefore, the positional accuracy of the negative electrode terminals 63E1 and 63E2 and the signal terminals 642 and 643 can be improved.
　本実施形態でも、２段目のタイバー６６０ｂ，６６１ｂは、１段目のタイバー６６０ａ，６６１ａよりも幅が広くされている。タイバー６６０ａ，６６１ａの幅は狭いため、主端子６３及び信号端子６４の曲げ加工などの際に邪魔にならず、且つ、半導体モジュール４０の体格を小型化することができる。また、タイバーカット時の寸法ずれを小さくすることができる。タイバー６６０ｂ，６６１ｂの幅は広いため、これにより剛性を向上し、封止樹脂体５０の成形時においてタイバー６６の変形を抑制することができる。 Also in this embodiment, the second tier tie bars 660b and 661b are wider than the first tier tie bars 660a and 661a. Since the width of the tie bars 660a and 661a is narrow, the tie bars 660a and 661a do not obstruct the bending of the main terminals 63 and the signal terminals 64, and the size of the semiconductor module 40 can be miniaturized. In addition, dimensional deviation at the time of tie bar cutting can be reduced. Since the width of the tie bars 660 b and 661 b is wide, the rigidity can be improved thereby, and the deformation of the tie bars 66 can be suppressed at the time of molding the sealing resin body 50.
　図示を省略するが、本実施形態でも、アイランド６１におけるクリップ９００の配置部６０ａと、同じクリップ９００が配置される配線部６２における配置部６０ｂとが、Ｘ方向に並んで配置されている。すなわち、同じクリップ９００に対する配置部６０ａ，６０ｂの並び方向が、アイランド６１及び配線部６２が連結された１段目のタイバー６６０ａ，６６１ａの延設方向と同じ方向とされている。このように、平行配置とすると、タイバー６６からクリップ９００までの最大長さを長くすることができるため、アイランド６１１～６１４と対応するスイッチング素子７０との接合部に作用する応力を低減することができる。なお、タイバーカット後の半導体モジュール４０において、アイランド６１に対して同じ側に配置された１段目のタイバー痕６６ａの並び方向と、クリップ９００それぞれの延設方向とが同じ方向（Ｘ方向）とされている。 Although illustration is omitted, also in this embodiment, the arrangement portion 60a of the clip 900 in the island 61 and the arrangement portion 60b in the wiring portion 62 in which the same clip 900 is arranged are arranged side by side in the X direction. That is, the arranging direction of the placement parts 60a and 60b with respect to the same clip 900 is the same as the extending direction of the first stage tie bars 660a and 661a to which the island 61 and the wiring part 62 are connected. In this manner, since the maximum length from the tie bar 66 to the clip 900 can be increased by parallel arrangement, the stress acting on the junction between the islands 611 to 614 and the corresponding switching element 70 can be reduced. it can. In the semiconductor module 40 after tie bar cutting, the alignment direction of the tie bar marks 66 a of the first stage disposed on the same side with respect to the island 61 and the extension direction of the clips 900 are the same (X direction). It is done.
　アイランド６１２及び配線部６２０と、アイランド６１４及び配線部６２２は、複数箇所で同じタイバー６６０ａ，６６０ｂにそれぞれ連結されている。これによれば、成形時においてタイバー６６０ａ，６６０ｂが変形するのを抑制することができる。タイバー変形の抑制により、アイランド６１２，６１４と対応するスイッチング素子７００Ｌ，７０１Ｌとの接合部に作用する応力を低減することができる。また、出力端子６３Ｐ１，６３Ｐ２から離れた位置にあるアイランド６１２，６１４の垂れを抑制することもできる。 The island 612 and the wiring portion 620, and the island 614 and the wiring portion 622 are respectively connected to the same tie bars 660a and 660b at a plurality of locations. According to this, it is possible to suppress the deformation of the tie bars 660a and 660b at the time of molding. By suppressing the tie bar deformation, it is possible to reduce the stress acting on the junction between the islands 612 and 614 and the corresponding switching elements 700L and 701L. In addition, it is possible to suppress the drooping of the islands 612 and 614 at positions away from the output terminals 63P1 and 63P2.
　アイランド６１２及び配線部６２０は、出力端子６３Ｐ１及びダミー端子６５を介して、タイバー６６０ａに連結されている。アイランド６１４及び配線部６２２は、出力端子６３Ｐ２及びダミー端子６５を介して、タイバー６６０ａに連結されている。このように、主端子６３よりも幅の狭いダミー端子６５を採用することで、タイバー６６０ａ，６６０ｂの変形を抑制しつつ、リードフレーム６０の体格増大を抑制することができる。 The island 612 and the wiring portion 620 are connected to the tie bar 660 a via the output terminal 63 P 1 and the dummy terminal 65. The island 614 and the wiring portion 622 are connected to the tie bar 660a via the output terminal 63P2 and the dummy terminal 65. Thus, by adopting the dummy terminal 65 narrower than the main terminal 63, it is possible to suppress an increase in physical size of the lead frame 60 while suppressing the deformation of the tie bars 660a and 660b.
　ダミー端子６５は、Ｙ方向において外枠６７に連結されている。これによっても、リードフレーム６０の剛性を向上し、たとえばタイバー６６０ａ，６６０ｂの変形を抑制することができる。正極端子６３Ｂ１，６３Ｂ２及び出力端子６３Ｐ１，６３Ｐ２については外枠６７に繋げないため、バスバー２７との接続性を確保することができる。 The dummy terminal 65 is connected to the outer frame 67 in the Y direction. Also by this, the rigidity of the lead frame 60 can be improved, and for example, deformation of the tie bars 660a and 660b can be suppressed. The positive electrode terminals 63B1 and 63B2 and the output terminals 63P1 and 63P2 can not be connected to the outer frame 67, so connectivity with the bus bar 27 can be secured.
　同じクリップ９００が配置されるアイランド６１２，６１４及び配線部６２１，６２３が、互いに異なるタイバー６６０ａ，６６１ａに連結されている。アイランド６１２，６１４及び配線部６２１，６２３が、タイバー６６に対して両吊りとなるため、成形時においてタイバー６６の変形を抑制することができる。また、クリップ９００の延設方向がタイバー６６と同じＸ方向となるため、スイッチング素子７０の接合部に対するＸ方向のせん断応力を抑制することもできる。 The islands 612 and 614 and the wiring parts 621 and 623 in which the same clip 900 is disposed are connected to different tie bars 660a and 661a. Since the islands 612 and 614 and the wiring portions 621 and 623 are both suspended with respect to the tie bar 66, deformation of the tie bar 66 can be suppressed at the time of molding. Further, since the extension direction of the clip 900 is the same X direction as the tie bar 66, it is possible to suppress the shear stress in the X direction with respect to the joint portion of the switching element 70.
　アイランド６１１，６１３は、正極端子６３Ｂ１，６３Ｂ２を介して、タイバー６６０ａ，６６０ｂに連結されている。正極端子６３Ｂ１，６３Ｂ２は、正極バスバー２７Ｂとの接続部６３Ｂｂを除く部分で、連結部６８により外枠６７に連結されている。これにより、リードフレーム６０の剛性を向上し、たとえばタイバー６６０ａ，６６０ｂの変形をより効果的に抑制することができる。また、連結部６８は接続部６３Ｂｂを除く部分に連結されているため、接続部６３Ｂｂと正極バスバー２７Ｂとの溶接に影響しない。 The islands 611 and 613 are connected to the tie bars 660a and 660b via the positive electrode terminals 63B1 and 63B2. The positive electrode terminals 63B1 and 63B2 are connected to the outer frame 67 by the connecting portion 68 except for the connection portion 63Bb with the positive electrode bus bar 27B. Thereby, the rigidity of lead frame 60 can be improved, and deformation of tie bars 660a and 660b can be more effectively suppressed, for example. Further, since the connecting portion 68 is connected to the portion excluding the connecting portion 63Bb, it does not affect the welding between the connecting portion 63Bb and the positive electrode bus bar 27B.
　（駆動部詳細）
　図５４に示すように、駆動部８０は、電圧検出回路８２と、温度検出回路８３と、判定回路８４と、駆動回路８５と、通知回路８６を有している。以下においては、上アーム側をハイサイド、下アーム側をローサイドとも称する。 (Details of drive unit)
As shown in FIG. 54, the drive unit 80 includes a voltage detection circuit 82, a temperature detection circuit 83, a determination circuit 84, a drive circuit 85, and a notification circuit 86. In the following, the upper arm side is also referred to as high side, and the lower arm side is also referred to as low side.
　電圧検出回路８２は、電圧検出部に相当する。電圧検出回路８２は、各アームを構成するスイッチング素子７０の主電極間の電圧、すなわちドレインーソース間の電圧Ｖｄｓ、又は、各相上下アームの相電圧Ｐ１，Ｐ２を検出する。相電圧Ｐ１は、スイッチング素子７００Ｈ，７００Ｌによる第１の上下アームの出力電圧である。相電圧Ｐ２は、スイッチング素子７０１Ｈ，７０１Ｌによる第２の上下アームの出力電圧である。相電圧Ｐ１，Ｐ２は、上記したように、アイランド６１２，６１４から検出することができる。電圧Ｖｄｓは、連結部６１５及びソース電位用のパッド７１から検出することができる。 The voltage detection circuit 82 corresponds to a voltage detection unit. The voltage detection circuit 82 detects the voltage between the main electrodes of the switching element 70 constituting each arm, that is, the voltage Vds between the drain and the source, or the phase voltages P1 and P2 of the upper and lower arms of each phase. The phase voltage P1 is an output voltage of the first upper and lower arms by the switching elements 700H and 700L. The phase voltage P2 is an output voltage of the second upper and lower arms by the switching elements 701H and 701L. The phase voltages P1 and P2 can be detected from the islands 612 and 614 as described above. The voltage Vds can be detected from the connecting portion 615 and the pad 71 for the source potential.
　温度検出回路８３は、温度検出部に相当する。温度検出回路８３は、感温ダイオードに基づいて、スイッチング素子７０の温度を検出する。温度検出回路８３は、アノード用及びカソード用のパッド７１からアノード電位及びカソード電位を取得して温度を検出する。 The temperature detection circuit 83 corresponds to a temperature detection unit. The temperature detection circuit 83 detects the temperature of the switching element 70 based on a temperature sensitive diode. The temperature detection circuit 83 detects the temperature by obtaining the anode potential and the cathode potential from the pad 71 for the anode and the cathode.
　判定回路８４は、判定部に相当する。判定回路８４は、電圧検出回路８２により検出された電圧値に基づいて、スイッチング素子７０にショートが生じているか否かを判定する。たとえばスイッチング素子７０１Ｈがショートした場合には相電圧Ｐ２が電源電圧ＶＢに固定され、スイッチング素子７０１Ｌがショートした場合には相電圧Ｐ２がグランド電位に固定される。また、スイッチング素子７０１Ｈがショートした場合には電圧Ｖｄｓは一定値ゼロで継続し、スイッチング素子７０１Ｌがショートした場合にはスイッチング素子７０１Ｈのソースがグランドに張り付くため、電圧Ｖｄｓはゼロよりも大きい一定値（電源電圧ＶＢ）で継続する。以上により、判定回路８４は、スイッチング素子７０にショートが生じているか否かを判定することができる。判定回路８４は、温度検出回路８３により検出された温度（順方向電圧Ｖｆ）に基づいて、スイッチング素子７０に温度異常の故障が生じているか否かを判定する。 The determination circuit 84 corresponds to a determination unit. The determination circuit 84 determines, based on the voltage value detected by the voltage detection circuit 82, whether or not the switching element 70 is shorted. For example, when switching element 701H is shorted, phase voltage P2 is fixed at power supply voltage VB, and when switching element 701L is shorted, phase voltage P2 is fixed at the ground potential. When switching element 701H is shorted, voltage Vds continues at a constant value of zero, and when switching element 701L is shorted, the source of switching element 701H sticks to the ground, so that voltage Vds is a constant value larger than zero. Continue at (power supply voltage VB). From the above, the determination circuit 84 can determine whether or not the switching element 70 is shorted. The determination circuit 84 determines, based on the temperature (forward voltage Vf) detected by the temperature detection circuit 83, whether or not a failure in temperature abnormality occurs in the switching element 70.
　駆動回路８５は、駆動部に相当する。駆動回路８５は、スイッチング素子７０を制御するための駆動信号（ゲート駆動信号）を生成する。駆動回路８５は、判定回路８４の判定結果に応じて、スイッチング素子７０のオンオフを制御する。駆動回路８５は、故障が生じたと判定されたスイッチング素子７０をオフさせるとともに、故障したスイッチング素子７０とは別の相であって同じサイドのスイッチング素子７０をオンさせる。たとえば、ハイサイドのスイッチング素子７００Ｈが故障した場合、スイッチング素子７００Ｈをオフさせ、スイッチング素子７０１Ｈをオンさせる。ローサイドのスイッチング素子７００Ｌが故障した場合、スイッチング素子７００Ｌをオフさせ、スイッチング素子７０１Ｌをオンさせる。 The drive circuit 85 corresponds to a drive unit. The drive circuit 85 generates a drive signal (gate drive signal) for controlling the switching element 70. The drive circuit 85 controls the on / off of the switching element 70 according to the determination result of the determination circuit 84. The drive circuit 85 turns off the switching element 70 determined to have a failure, and turns on the switching element 70 on the same side as the phase different from the failed switching element 70. For example, when the switching element 700H on the high side fails, the switching element 700H is turned off and the switching element 701H is turned on. When the low side switching element 700L fails, the switching element 700L is turned off and the switching element 701L is turned on.
　通知回路８６は、通知部に相当する。通知回路８６は、故障の発生と、故障したスイッチング素子７０のサイドに関する情報を、制御装置部２０を構成する別の半導体モジュール４０に通知する。上記したように、半導体モジュール４０は、異常通知用の信号端子６４２を有している。半導体モジュール４０を区別するために、図５５では、符号４０ａ，４０ｂ，４０ｃを付与している。半導体モジュール４０ａがＵ相及びＶ相の上下アームを構成し、半導体モジュール４０ｂがＷ相及びＸ相の上下アームを構成し、半導体モジュール４０ｃがＹ相及びＺ相の上下アームを構成している。図５５に示すように、３つの半導体モジュール４０ａ，４０ｂ，４０ｃそれぞれの信号端子６４２が相互に接続されて、双方向の通信が可能とされている。 The notification circuit 86 corresponds to a notification unit. The notification circuit 86 notifies another semiconductor module 40 constituting the control device unit 20 of the occurrence of the failure and the information on the side of the failed switching element 70. As described above, the semiconductor module 40 has the signal terminal 642 for abnormality notification. In order to distinguish the semiconductor modules 40, reference numerals 40a, 40b and 40c are given in FIG. The semiconductor module 40a constitutes upper and lower arms of U phase and V phase, the semiconductor module 40b constitutes upper and lower arms of W phase and X phase, and the semiconductor module 40c constitutes upper and lower arms of Y phase and Z phase. As shown in FIG. 55, the signal terminals 642 of the three semiconductor modules 40a, 40b, and 40c are connected to each other to enable bi-directional communication.
　図５６は、通知信号において、スイッチング素子７０の故障通知例を示している。上段及び下段において、時間ｔ１の幅（Ｈｉ幅）を有するパルスが、故障発生を示している。上段において、故障発生を示すパルスの後に送信され、時間ｔ１よりも狭い時間ｔ２の幅を有するパルスが、ハイサイド側の故障を示している。下段において、故障発生を示すパルスの後に送信され、時間ｔ１よりも狭く、時間ｔ２よりも広い時間ｔ３の幅を有するパルスが、ローサイド側の故障を示している。なお、時間ｔ２を時間ｔ３よりも広くしてもよい。このようにして、パルス幅（デューティ比）の変更により、ハイサイド故障とローサイド故障を区別することができる。 FIG. 56 shows an example of failure notification of the switching element 70 in the notification signal. In the upper and lower portions, a pulse having a width (Hi width) at time t1 indicates occurrence of a failure. In the upper part, a pulse transmitted after a pulse indicating failure occurrence and having a width of time t2 narrower than time t1 indicates a failure on the high side. In the lower part, a pulse transmitted after a pulse indicating failure occurrence and having a width of time t3 narrower than time t1 and wider than time t2 indicates a low side failure. The time t2 may be wider than the time t3. In this way, high side faults and low side faults can be distinguished by changing the pulse width (duty ratio).
　図５７は、半導体モジュール４０ａのスイッチング素子７０１Ｌにショート故障が生じた場合の制御を示している。電圧検出回路８２によって検出された電圧値により、判定回路８４がスイッチング素子７０１Ｌにショート故障が発生したと判定すると、先ず駆動回路８５は、スイッチング素子７０１Ｌをオフさせるとともに、別の相であって同じサイドのスイッチング素子７００Ｌをオンさせる。なお、それ以外のスイッチング素子７０についてはオフさせる。また、通知回路８６は、他の半導体モジュール４０ｂ，４０ｃに対して、ローサイド側に故障が生じたことを示す通知信号を出力する。 FIG. 57 shows control when a short failure occurs in the switching element 701L of the semiconductor module 40a. If the determination circuit 84 determines that a short failure has occurred in the switching element 701L based on the voltage value detected by the voltage detection circuit 82, the drive circuit 85 first turns off the switching element 701L and is another phase and is the same. The side switching element 700L is turned on. The other switching elements 70 are turned off. Further, the notification circuit 86 outputs, to the other semiconductor modules 40b and 40c, a notification signal indicating that a failure has occurred on the low side.
　半導体モジュール４０ｂ，４０ｃの駆動回路８５は、故障を示す通知信号を受信すると、すべてのスイッチング素子７０をオフさせる。これにより、貫通電流が流れるのを抑制することができる。次いで、駆動回路８５は、半導体モジュール４０ａにおいて故障が生じたローサイド側のスイッチング素子７００Ｌ，７０１Ｌをすべてオンさせる。 The drive circuit 85 of the semiconductor modules 40 b and 40 c turns off all the switching elements 70 when receiving the notification signal indicating the failure. This can suppress the flow of through current. Next, the drive circuit 85 turns on all the low- side switching elements 700L and 701L in which a failure occurs in the semiconductor module 40a.
　図５８は参考例、具体的には一相分の上下アームを構成する半導体モジュールを６つ用いて制御装置部を構成する場合のタイミングチャートを示している。この構成では、スイッチング素子の故障が検出されると、他の５つの半導体モジュールに対して故障を示す通知信号が出力される。したがって、所定の通信時間を経てから、他の半導体モジュールにおいて、同じサイドのスイッチング素子がオンされることとなる。このため、通信中は故障したスイッチング素子のみに電流が集中してしまう。発電時においては、故障したスイッチング素子をオフさせても、寄生ダイオードを通して電流が流れるため、遮断できない。 FIG. 58 shows a reference example, specifically, a timing chart in the case where a control device unit is configured by using six semiconductor modules constituting upper and lower arms for one phase. In this configuration, when a failure of the switching element is detected, a notification signal indicating the failure is output to the other five semiconductor modules. Therefore, after passing a predetermined communication time, the switching elements on the same side are turned on in the other semiconductor modules. Therefore, during communication, current concentrates only on the failed switching element. At the time of power generation, even if the faulty switching element is turned off, the current flows through the parasitic diode, so it can not be shut off.
　これに対し、本実施形態では、駆動回路８５が上記した制御を実行する。このため、図５９に示すように、故障が発生すると、同一の半導体モジュール４０内における別の相であって同じサイドのスイッチング素子７０がオンされる。このように、故障が発生すると、同一半導体モジュール４０内において、故障していない正常相が直ちに保護動作に移行する。これにより、故障したスイッチング素子７０以外に電流経路が形成される。したがって、故障したスイッチング素子７０に電流が集中するのを抑制することができる。また、通信完了により、他の半導体モジュール４０においても、同じサイドのスイッチング素子７０がオンされる。これにより、電流経路がさらに増えるため、スイッチング素子７０のストレス、電流ストレスや熱ストレスを低減することができる。 On the other hand, in the present embodiment, the drive circuit 85 executes the control described above. For this reason, as shown in FIG. 59, when a failure occurs, the switching element 70 on the same side which is another phase in the same semiconductor module 40 is turned on. As described above, when a failure occurs, the normal phase which has not failed in the same semiconductor module 40 immediately shifts to the protection operation. Thus, a current path is formed in addition to the failed switching element 70. Therefore, it is possible to suppress current concentration on the failed switching element 70. Further, when the communication is completed, the switching element 70 on the same side is turned on also in the other semiconductor modules 40. Thereby, the current path is further increased, so that the stress of the switching element 70, the current stress, and the thermal stress can be reduced.
　図６０は、半導体モジュール４０ａのスイッチング素子７０１Ｈに温度異常が生じた場合の制御を示している。温度検出回路８３によって検出された温度により、判定回路８４がスイッチング素子７０１Ｈに温度異常の故障が発生したと判定すると、先ず駆動回路８５は、スイッチング素子７０１Ｈをオフさせるとともに、別の相であって同じサイドのスイッチング素子７００Ｈをオンさせる。それ以外のスイッチング素子７０についてはオフさせる。また、通知回路８６は、他の半導体モジュール４０ｂ，４０ｃに対して、ハイサイド側に故障が生じたことを示す通知信号を出力する。 FIG. 60 shows control when a temperature abnormality occurs in the switching element 701H of the semiconductor module 40a. If the determination circuit 84 determines that a failure in temperature abnormality has occurred in the switching element 701H based on the temperature detected by the temperature detection circuit 83, the drive circuit 85 first turns off the switching element 701H and is another phase. The switching element 700H on the same side is turned on. The other switching elements 70 are turned off. Further, the notification circuit 86 outputs a notification signal indicating that a failure has occurred on the high side to the other semiconductor modules 40 b and 40 c.
　半導体モジュール４０ｂ，４０ｃの駆動回路８５は、故障を示す通知信号を受信すると、すべてのスイッチング素子７０をオフさせる。これにより、貫通電流が流れるのを抑制することができる。次いで、駆動回路８５は、半導体モジュール４０ａにおいて故障が生じたハイサイド側のスイッチング素子７００Ｈ，７０１Ｈをすべてオンさせる。よって、温度異常が生じた場合にも、ショート故障と同等の効果を奏することができる。 The drive circuit 85 of the semiconductor modules 40 b and 40 c turns off all the switching elements 70 when receiving the notification signal indicating the failure. This can suppress the flow of through current. Next, the drive circuit 85 turns on all of the high- side switching elements 700H and 701H in which a failure occurs in the semiconductor module 40a. Therefore, even when the temperature abnormality occurs, the same effect as the short failure can be obtained.
　なお、オープン故障は電流が流れない故障ではあるが、固定子巻線１２１などのインダクタンス成分によって、相電圧Ｐ１，Ｐ２が異常となり、さらなる故障に繋がる虞がある。本実施形態では、図６１に示すように、オープン故障が生じると、すべてのスイッチング素子７０をオフさせる。これにより、二次的な故障を抑制することができる。図６１では、スイッチング素子７０１Ｌにオープン故障が生じた場合の例を示している。 Although the open failure is a failure in which no current flows, the phase voltages P1 and P2 may become abnormal due to inductance components of the stator winding 121 and the like, which may lead to a further failure. In the present embodiment, as shown in FIG. 61, when an open failure occurs, all the switching elements 70 are turned off. Thereby, secondary failure can be suppressed. FIG. 61 shows an example where an open failure has occurred in the switching element 701L.
　図６２は、駆動部８０の第１変形例を示している。この駆動部８０は、所定の処理を実行する処理回路８７と、相電圧Ｐ１，Ｐ２をそれぞれ取得し、相電圧Ｐ１，Ｐ２の少なくとも一方が閾値電圧を超えると、処理回路８７をスリープ状態から起動させる起動回路８８と、処理回路８７に電源を供給する電源回路８９を有している。処理回路８７は処理部に相当し、起動回路８８は起動部に相当し、電源回路８９は電源部に相当する。 FIG. 62 shows a first modification of the drive unit 80. As shown in FIG. The drive unit 80 acquires the processing circuit 87 executing predetermined processing and the phase voltages P1 and P2, respectively. When at least one of the phase voltages P1 and P2 exceeds the threshold voltage, the processing circuit 87 is activated from the sleep state. And a power supply circuit 89 for supplying power to the processing circuit 87. The processing circuit 87 corresponds to a processing unit, the start circuit 88 corresponds to a start unit, and the power supply circuit 89 corresponds to a power supply unit.
　図６３は、駆動部８０のより具体的な構成を示している。処理回路８７は、アナログ回路８７０と、デジタル回路８７１を有している。処理回路８７は、たとえば上記した電圧検出回路８２、温度検出回路８３、判定回路８４、駆動回路８５、及び通知回路８６などを含んでいる。 FIG. 63 shows a more specific configuration of the drive unit 80. As shown in FIG. The processing circuit 87 includes an analog circuit 870 and a digital circuit 871. The processing circuit 87 includes, for example, the voltage detection circuit 82, the temperature detection circuit 83, the determination circuit 84, the drive circuit 85, and the notification circuit 86 described above.
　起動回路８８は、ＯＲゲート８８０と、ＯＲゲート８８０の後段に設けられた起動スイッチ８８１を有している。ＯＲゲート８８０には、相電圧Ｐ１，Ｐ２が入力される。ＯＲゲート８８０は、相電圧Ｐ１，Ｐ２の少なくとも一方が予め設定された閾値電圧Ｖｔｈを超えると、Ｈｉレベルの信号を出力する。これにより、起動スイッチ８８１がオフからオンに切り替わる。 The start-up circuit 88 includes an OR gate 880 and a start switch 881 provided downstream of the OR gate 880. Phase voltages P1 and P2 are input to the OR gate 880. The OR gate 880 outputs a Hi level signal when at least one of the phase voltages P1 and P2 exceeds a preset threshold voltage Vth. Thus, the start switch 881 is switched from off to on.
　電源回路８９は、起動スイッチ８８１がオン状態になると、グランドに接続されて、作動を開始する。そして、アナログ回路８７０に電源ＶＣＣ１を供給し、デジタル回路８７１に電源ＶＣＣ２を供給する。これにより、アナログ回路８７０及びデジタル回路８７１がスリープ状態から起動状態に切り替わる。 When the start switch 881 is turned on, the power supply circuit 89 is connected to the ground to start operation. Then, the power supply VCC1 is supplied to the analog circuit 870, and the power supply VCC2 is supplied to the digital circuit 871. Thereby, the analog circuit 870 and the digital circuit 871 are switched from the sleep state to the awake state.
　図６４では、スイッチング素子７０１Ｌのショート故障により、相電圧Ｐ２がグランド電位に固着した場合を示している。第１変形例の構成によれば、ショート故障とは反対の相電圧Ｐ１により電源回路８９を作動させ、これにより電源ＶＣＣ１，ＶＣＣ２が立ち上がり、処理回路８７を起動させることができる。このように、二相分のうち、一方の上下アームのローサイドにショート故障が生じていても、処理回路８７をスリープ状態から起動させることができる。したがって、駆動部８０が、スイッチング素子７０の故障を検知し、故障したスイッチング素子７０を保護することができる。なお、図６４では、回路遅延を省略している。 FIG. 64 shows a case where the phase voltage P2 is fixed to the ground potential due to a short circuit failure of the switching element 701L. According to the configuration of the first modification, the power supply circuit 89 is operated by the phase voltage P1 opposite to the short failure, whereby the power supplies VCC1 and VCC2 can rise and the processing circuit 87 can be activated. As described above, even if a short failure has occurred on the low side of one of the upper and lower arms of the two phases, the processing circuit 87 can be activated from the sleep state. Therefore, the drive unit 80 can detect a failure of the switching element 70 and protect the failed switching element 70. In FIG. 64, the circuit delay is omitted.
　図６５は、上記したデジタル回路８７１に故障が生じ、アナログ回路８７０であるドライバ８７０ａのうち、スイッチング素子７００Ｈ，７０１Ｌそれぞれのドライバ８７０ａへ出力する駆動信号がオン固着された状態を示している。このような故障が生じると、図６５に破線矢印で示すように、回転電機部１０側、具体的には固定子巻線１２１などを介して、異なる相を跨いだ貫通電流が発生する虞がある。 FIG. 65 shows a state where a failure occurs in the digital circuit 871 described above and the drive signal output to the driver 870a of each of the switching elements 700H and 701L among the driver 870a which is the analog circuit 870 is fixed on. If such a failure occurs, as indicated by a broken line arrow in FIG. 65, there is a possibility that a through current may be generated across different phases via the rotating electrical machine unit 10 side, specifically the stator winding 121 etc. is there.
　貫通電流を抑制するために、図６６に示す参考例では、アナログ回路８７０ｒが、ドライバ８７０ａｒと、電圧検出回路８２ｒであるコンパレータを有している。デジタル回路８７１ｒが、駆動回路８５ｒと、ＡＮＤゲート８７１ａｒと、ＮＯＴゲート８７１ｂｒを有している。参考例においては、本実施形態の関連する要素の符号に対し、末尾にｒを付与している。ＮＯＴゲート８７１ｂｒは、ＡＮＤゲート８７１ａｒの一方の入力と電圧検出回路８２ｒとの間に設けられている。ＡＮＤゲート８７１ａｒには、駆動回路８５ｒにて生成された駆動信号と、電圧検出回路８２ｒにより検出された電圧Ｖｄｓの反転値が入力される。ＡＮＤゲート８７１ａｒの出力が、ドライバ８７０ａｒに入力される。 In order to suppress the through current, in the reference example shown in FIG. 66, the analog circuit 870 r includes a driver 870 ar and a comparator which is a voltage detection circuit 82 r. The digital circuit 871 r includes a drive circuit 85 r, an AND gate 871 ar, and a NOT gate 871 br. In the reference example, r is added to the end of the reference numerals of the relevant elements of this embodiment. The NOT gate 871br is provided between one input of the AND gate 871ar and the voltage detection circuit 82r. The drive signal generated by the drive circuit 85r and the inverted value of the voltage Vds detected by the voltage detection circuit 82r are input to the AND gate 871ar. The output of the AND gate 871ar is input to the driver 870ar.
　参考例に示す構成では、スイッチング素子７０ｒがオンしている状態で、電流方向と相関がある電圧Ｖｄｓを監視する。そして、電流方向が正常な場合にオンを継続し、電流方向が異常な場合にオフに切り替えるようになっている。図６６は、実線矢印で示すように、回転電機１の発電時を示している。電圧Ｖｄｓは電流方向が正常であるゼロ（０）を示すため、ＡＮＤゲート８７１ａｒから出力される駆動信号は、１が維持される。これにより、スイッチング素子７０ｒのオンが継続される。図示を省略するが、スイッチング素子７０ｒを流れる電流の方向が逆（異常）の場合、電圧Ｖｄｓは電流方向が異常である１を示すため、ＡＮＤゲート８７１ａｒから出力される駆動信号は、ゼロ（０）に切り替わる。これにより、スイッチング素子７０ｒもオンからオフに切り替わる。以上により、貫通電流などの発生を抑制することができる。 In the configuration shown in the reference example, while the switching element 70r is on, the voltage Vds having a correlation with the current direction is monitored. Then, when the current direction is normal, the turn-on is continued, and when the current direction is abnormal, the switch is turned off. FIG. 66 shows the time of power generation of the rotary electric machine 1 as indicated by solid arrows. Since the voltage Vds indicates zero (0) in which the current direction is normal, the drive signal output from the AND gate 871ar is maintained at 1. As a result, the switching element 70r is kept on. Although illustration is omitted, when the direction of the current flowing through the switching element 70r is reverse (abnormal), the voltage Vds indicates 1 that the current direction is abnormal, so the drive signal output from the AND gate 871ar is zero (0 Switch to). Thereby, the switching element 70r also switches from on to off. By the above, generation | occurrence | production of a through current etc. can be suppressed.
　しかしながら、参考例に示す構成では、デジタル回路８７１ｒに故障が生じた場合、デジタル回路８７１ｒが所望の動作を実行しない虞がある。たとえば図６７では、ＮＯＴゲート８７１ｂｒに故障が生じて反転機能が喪失されている。この場合、スイッチング素子７０を流れる電流の方向が異常の場合、電圧Ｖｄｓが異常を示す１を出力したにもかかわらず、入力前に反転されないため、ＡＮＤゲート８７１ａｒから出力される駆動信号は、１となる。これにより、スイッチング素子７０のオンが継続されてしまう。 However, in the configuration shown in the reference example, when a failure occurs in the digital circuit 871 r, the digital circuit 871 r may not execute a desired operation. For example, in FIG. 67, the NOT gate 871 br is broken and the inverting function is lost. In this case, if the direction of the current flowing through the switching element 70 is abnormal, the drive signal output from the AND gate 871ar is 1 because the voltage Vds is not inverted before the input even though 1 is output indicating an abnormality. It becomes. As a result, the switching element 70 continues to be turned on.
　図６８は、駆動部８０の第２変形例を示している。第２変形例では、参考例に示す構成に加えて、処理回路８７が、駆動回路８５を含むデジタル回路８７１とは別のデジタル回路８７２を有している。デジタル回路８７２は、電源回路８９からデジタル回路８７１に供給される電源ＶＣＣ２とは異なる電源ＶＣＣ３、具体的には電源ＶＣＣ２よりも低い電圧が供給されて起動する。電源ＶＣＣ３は、たとえば電圧降下用の抵抗を介すことで、電源ＶＣＣ２よりも低い電圧とされる。 FIG. 68 shows a second modification of the drive unit 80. As shown in FIG. In the second modification, in addition to the configuration shown in the reference example, the processing circuit 87 includes a digital circuit 872 different from the digital circuit 871 including the driving circuit 85. The digital circuit 872 is activated by being supplied with a power supply VCC3 different from the power supply VCC2 supplied from the power supply circuit 89 to the digital circuit 871, specifically, a voltage lower than the power supply VCC2. The power supply VCC3 is set to a voltage lower than the power supply VCC2, for example, via a voltage drop resistance.
　デジタル回路８７２は、デジタル回路８７１同様、ＡＮＤゲート８７２ａと、ＮＯＴゲート８７２ｂを有している。ＮＯＴゲート８７２ｂは、ＡＮＤゲート８７２ａの一方の入力と電圧検出回路８２との間に設けられている。ＡＮＤゲート８７２ａには、ＡＮＤゲート８７１ａから出力された駆動信号と、電圧Ｖｄｓの反転値が入力される。ＡＮＤゲート８７２ａの出力が、ドライバ８７０ａに入力される。 Similar to the digital circuit 871, the digital circuit 872 includes an AND gate 872a and a NOT gate 872b. The NOT gate 872 b is provided between one input of the AND gate 872 a and the voltage detection circuit 82. The drive signal output from the AND gate 871a and the inverted value of the voltage Vds are input to the AND gate 872a. The output of the AND gate 872a is input to the driver 870a.
　このような構成を採用することにより、デジタル回路８７１のたとえばＮＯＴゲート８７１ｂに故障が発生し、反転機能が喪失されても、スイッチング素子７０を流れる電流の方向が異常の場合には、スイッチング素子７０をオンからオフに切り替えることができる。また、デジタル回路８７２のたとえばＮＯＴゲート８７２ｂに故障が発生し、反転機能が喪失されても、スイッチング素子７０を流れる電流の方向が異常の場合には、スイッチング素子７０をオンからオフに切り替えることができる。したがって、冗長性を向上することができる。 By adopting such a configuration, for example, even if a failure occurs in, for example, the NOT gate 871b of the digital circuit 871 and the inversion function is lost, the switching element 70 is operated if the direction of the current flowing through the switching element 70 is abnormal. You can switch from on to off. Also, even if a fault occurs in, for example, the NOT gate 872b of the digital circuit 872 and the inversion function is lost, the switching element 70 can be switched from on to off if the direction of the current flowing through the switching element 70 is abnormal. it can. Therefore, redundancy can be improved.
　（その他）
　本実施形態では、架橋部材９０として、４つのクリップ９００を用いる例を示したが、これに限定されない。たとえば各相の電流を検出する場合には、架橋部材９０としてシャント抵抗器９０１を用いることができる。連結部６１５によりアイランド６１１，６１３を一体化する例を示したが、これに限定されない。第１実施形態同様、アイランド６１１，６１３を分離してもよい。 (Others)
In the present embodiment, an example in which four clips 900 are used as the cross-linking member 90 is shown, but the present invention is not limited to this. For example, in the case of detecting the current of each phase, a shunt resistor 901 can be used as the bridging member 90. Although the example which integrates the islands 611 and 613 by the connection part 615 was shown, it is not limited to this. As in the first embodiment, the islands 611 and 613 may be separated.
　この明細書の開示は、例示された実施形態に制限されない。開示は、例示された実施形態と、それらに基づく当業者による変形態様を包含する。たとえば、開示は、実施形態において示された要素の組み合わせに限定されない。開示は、多様な組み合わせによって実施可能である。開示される技術的範囲は、実施形態の記載に限定されない。 The disclosure of this specification is not limited to the illustrated embodiments. The disclosure includes the illustrated embodiments and variations based on them by those skilled in the art. For example, the disclosure is not limited to the combination of elements shown in the embodiments. The disclosure can be implemented in various combinations. The disclosed technical scope is not limited to the description of the embodiments.
　第１実施形態に示した半導体モジュール４０の構成を、第２実施形態に示した回転電機１に適用することができる。第２実施形態に示した半導体モジュール４０の構成を、第１実施形態に示した回転電機１に適用することができる。 The configuration of the semiconductor module 40 shown in the first embodiment can be applied to the rotary electric machine 1 shown in the second embodiment. The configuration of the semiconductor module 40 shown in the second embodiment can be applied to the rotary electric machine 1 shown in the first embodiment.
　第１実施形態に示した半導体モジュール４０の構成の一部について、第２実施形態に示した半導体モジュール４０に組み合わせることもできる。たとえば、第１実施形態に示した封止樹脂体５０の構成を第２実施形態に組み合わせることができる。第１実施形態に示したリードフレーム６０を第２実施形態に組み合わせることができる。電流を検出する場合には、第１実施形態に示したシャント抵抗器９０１を第２実施形態に組み合わせることができる。 Part of the configuration of the semiconductor module 40 shown in the first embodiment can be combined with the semiconductor module 40 shown in the second embodiment. For example, the configuration of the sealing resin body 50 shown in the first embodiment can be combined with the second embodiment. The lead frame 60 shown in the first embodiment can be combined with the second embodiment. In the case of detecting a current, the shunt resistor 901 shown in the first embodiment can be combined with the second embodiment.
　第２実施形態に示した半導体モジュール４０の構成の一部について、第１実施形態に示した半導体モジュール４０に組み合わせることもできる。たとえば、第２実施形態に示したアイランド６１、配線部６２、及び主端子６３の配置を、第１実施形態に組み合わせることができる。第２実施形態に示した駆動部８０を第１実施形態に組み合わせることができる。 A part of the configuration of the semiconductor module 40 shown in the second embodiment can be combined with the semiconductor module 40 shown in the first embodiment. For example, the arrangement of the island 61, the wiring portion 62, and the main terminal 63 shown in the second embodiment can be combined with the first embodiment. The drive unit 80 shown in the second embodiment can be combined with the first embodiment.
　タイバー６６の延設方向と、架橋部材９０の延設方向、すなわち配置部６０ａ，６０ｂの並び方向とが、略平行とされる構成の適用対象は、上記例に限定されない。複数のアイランド６１と、架橋部材９０を介してスイッチング素子７０と接続され、該スイッチング素子７０が配置されるアイランド６１とは別の配線を有すると、高さ方向のばらつきが生じやすくなる。特にタイバー６６の延設方向において複数のアイランド６１が配置されると、タイバー６６が長くなる。たとえば半導体モジュール４０内に一相分の上下アームを構成する２つのスイッチング素子７０が配置され、スイッチング素子７０が個別に配置されるアイランド６１が、タイバー６６の延設方向であるＸ方向に並んで配置される構成において、上記した平行配置を採用すると、アイランド６１とスイッチング素子７０との接合部に作用する応力を抑制することができる。なお、スイッチング素子７０が配置されるアイランド６１とは別の配線とは、たとえば別のアイランド６１や配線部６２である。複数のスイッチング素子７０は、上下アームを構成するものに限定されない。 The application target of the configuration in which the extending direction of the tie bar 66 and the extending direction of the bridging member 90, that is, the arranging direction of the placement portions 60a and 60b are substantially parallel is not limited to the above example. If a plurality of islands 61 and wiring connected to the switching element 70 via the bridging member 90 and having a wire different from the island 61 on which the switching element 70 is disposed are provided, variation in the height direction is likely to occur. In particular, when the plurality of islands 61 are arranged in the extending direction of the tie bar 66, the tie bar 66 becomes long. For example, two switching elements 70 constituting upper and lower arms for one phase are disposed in the semiconductor module 40, and islands 61 in which the switching elements 70 are individually disposed are aligned in the X direction which is the extension direction of the tie bar 66. In the arrangement configuration, when the above-described parallel arrangement is adopted, it is possible to suppress the stress acting on the junction between the island 61 and the switching element 70. The wiring different from the island 61 in which the switching element 70 is disposed is, for example, another island 61 or a wiring portion 62. The plurality of switching elements 70 are not limited to those constituting the upper and lower arms.
　本開示は、実施例に準拠して記述されたが、本開示は当該実施例や構造に限定されるものではないと理解される。本開示は、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらに一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本開示の範疇や思想範囲に入るものである。 Although the present disclosure has been described based on the examples, it is understood that the present disclosure is not limited to the examples and structures. The present disclosure also includes various modifications and variations within the equivalent range. In addition, various combinations and forms, and further, other combinations and forms including only one element, or more or less than these elements are also within the scope and the scope of the present disclosure.

Claims (5)

  1. 　複数相の上下アームを構成するスイッチング素子（７０）としてのハイサイドのスイッチング素子（７００Ｈ，７０１Ｈ）及びローサイドのスイッチング素子（７００Ｌ，７０１Ｌ）とともに半導体モジュール（４０）を構成し、前記スイッチング素子の駆動を制御する制御装置であって、
    　各アームを構成する前記スイッチング素子の主電極間の電圧、又は、各相上下アームの相電圧を検出する電圧検出部（８２）と、
    　前記電圧検出部により検出された電圧値に基づいて、前記スイッチング素子にショート故障が生じているか否かを判定する判定部（８４）と、
    　前記判定部により故障が生じたと判定されると、故障が生じた前記スイッチング素子をオフさせるとともに、故障した前記スイッチング素子とは別の相であって同じサイドの前記スイッチング素子をオンさせる駆動部（８５）と、
    を備える制御装置。     A semiconductor module (40) is configured with high side switching elements (700H, 701H) as switching elements (70) constituting upper and lower arms of multiple phases and low side switching elements (700L, 701L), and driving of the switching elements Controller that controls the
    A voltage detection unit (82) for detecting a voltage between main electrodes of the switching elements constituting each arm or phase voltages of upper and lower arms of each phase;
    A determination unit (84) that determines whether or not a short circuit failure has occurred in the switching element based on the voltage value detected by the voltage detection unit;
    A driving unit that turns off the switching element in which the fault has occurred and turns on the switching element on the same side as a phase different from the switching element in which the fault has occurred if it is determined by the determination section that a fault has occurred 85) and
    Control device comprising:
  2. 　複数相の上下アームを構成するスイッチング素子（７０）としてのハイサイドのスイッチング素子（７００Ｈ，７０１Ｈ）及びローサイドのスイッチング素子（７００Ｌ，７０１Ｌ）とともに半導体モジュール（４０）を構成し、前記スイッチング素子の駆動を制御する制御装置であって、
    　各アームを構成する前記スイッチング素子の温度を検出する温度検出部（８３）と、
    　前記温度検出部により検出された温度に基づいて、前記スイッチング素子に温度異常の故障が生じているか否かを判定する判定部（８４）と、
    　前記判定部により故障が生じたと判定されると、故障が生じた前記スイッチング素子をオフさせるとともに、故障した前記スイッチング素子とは別の相であって同じサイドの前記スイッチング素子をオンさせる駆動部（８５）と、
    を備える制御装置。     A semiconductor module (40) is configured with high side switching elements (700H, 701H) as switching elements (70) constituting upper and lower arms of multiple phases and low side switching elements (700L, 701L), and driving of the switching elements Controller that controls the
    A temperature detection unit (83) for detecting the temperature of the switching element constituting each arm;
    A determination unit (84) that determines whether or not a temperature abnormality failure has occurred in the switching element based on the temperature detected by the temperature detection unit;
    A driving unit that turns off the switching element in which the fault has occurred and turns on the switching element on the same side as a phase different from the switching element in which the fault has occurred if it is determined by the determination section that a fault has occurred 85) and
    Control device comprising:
  3. 　複数の前記半導体モジュールにより、回転電機（１）の制御装置部（２０）を構成する請求項１又は請求項２に記載の制御装置であって、
    　前記判定部により故障が生じたと判定されると、故障発生とともに故障した前記スイッチング素子のサイドに関する情報を、別の前記半導体モジュールに通知する通知部（８６）をさらに備え、
    　別の前記半導体モジュールから故障通知が入力されると、前記駆動部は、故障した前記スイッチング素子と同じサイドの前記スイッチング素子をオンさせる制御装置。     The control device according to claim 1 or 2, wherein a control device unit (20) of the rotating electrical machine (1) is configured by the plurality of semiconductor modules.
    The semiconductor device further comprises a notification unit (86) for notifying another semiconductor module of information related to the side of the switching element that has failed upon occurrence of a failure if it is determined by the determination unit that a failure has occurred.
    The control device, when the failure notification is input from another semiconductor module, the driving unit turns on the switching element on the same side as the failed switching element.
  4. 　複数相の上下アームを構成するスイッチング素子（７０）の駆動を制御する制御装置であって、
    　所定の処理を実行する処理部（８７）と、
    　前記複数相の上下アームの相電圧をそれぞれ取得し、前記相電圧の少なくとも１つが閾値電圧を超えると、前記処理部をスリープ状態から起動させる起動部（８８）と、
    を備える制御装置。     A control device for controlling driving of switching elements (70) constituting upper and lower arms of a plurality of phases,
    A processing unit (87) that executes a predetermined process;
    An activation unit (88) configured to acquire phase voltages of the plurality of upper and lower arms and to start the processing unit from the sleep state when at least one of the phase voltages exceeds a threshold voltage;
    Control device comprising:
  5. 　前記処理部に電源を供給する電源部（８９）をさらに備え、
    　前記起動部は、前記複数相の上下アームの相電圧が入力されるＯＲゲート（８８０）と、相電圧の少なくとも１つが閾値電圧を超えたときの前記ＯＲゲートからの出力によってオンされる起動スイッチ（８８１）と、を有し、
    　前記起動スイッチがオンされることで、前記電源部が作動して前記処理部に電源が供給され、前記処理部がスリープ状態から起動状態となる請求項４に記載の制御装置。
          It further comprises a power supply unit (89) for supplying power to the processing unit,
    The start unit is an OR gate (880) to which phase voltages of upper and lower arms of the plurality of phases are input, and a start switch turned on by an output from the OR gate when at least one of the phase voltages exceeds a threshold voltage And (881), and
    The control device according to claim 4, wherein when the start switch is turned on, the power supply unit is operated to supply power to the processing unit, and the processing unit is switched from the sleep state to the activation state.
PCT/JP2018/031117 2017-10-19 2018-08-23 Control device WO2019077873A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017202738A JP2019075959A (en) 2017-10-19 2017-10-19 Control arrangement
JP2017-202738 2017-10-19

Publications (1)

Publication Number Publication Date
WO2019077873A1 true WO2019077873A1 (en) 2019-04-25

Family

ID=66173635

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/031117 WO2019077873A1 (en) 2017-10-19 2018-08-23 Control device

Country Status (2)

Country Link
JP (1) JP2019075959A (en)
WO (1) WO2019077873A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7322653B2 (en) * 2019-10-15 2023-08-08 株式会社デンソー switch drive
JP7331811B2 (en) * 2020-09-21 2023-08-23 株式会社デンソー power converter
CA3198717A1 (en) 2020-10-14 2022-04-21 Junichi Kato Care-needing person assistance system
WO2023210170A1 (en) 2022-04-25 2023-11-02 富士電機株式会社 Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009219225A (en) * 2008-03-10 2009-09-24 Toyota Motor Corp Vehicle driving system
JP2012006463A (en) * 2010-06-24 2012-01-12 Jtekt Corp Electric power steering device
JP2013188029A (en) * 2012-03-08 2013-09-19 Jtekt Corp Motor control device
WO2017150641A1 (en) * 2016-03-04 2017-09-08 日本電産株式会社 Power conversion device, motor drive unit, and electric power steering device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009219225A (en) * 2008-03-10 2009-09-24 Toyota Motor Corp Vehicle driving system
JP2012006463A (en) * 2010-06-24 2012-01-12 Jtekt Corp Electric power steering device
JP2013188029A (en) * 2012-03-08 2013-09-19 Jtekt Corp Motor control device
WO2017150641A1 (en) * 2016-03-04 2017-09-08 日本電産株式会社 Power conversion device, motor drive unit, and electric power steering device

Also Published As

Publication number Publication date
JP2019075959A (en) 2019-05-16

Similar Documents

Publication Publication Date Title
WO2019077873A1 (en) Control device
KR102170022B1 (en) Architecture of interconnected electronic power modules for a rotary electric machine and rotary electric machine comprising such an architecture
US7826231B2 (en) Power conversion apparatus
CN107004647B (en) Electro part carrying heat-radiating substrate
US10319849B2 (en) Semiconductor device, and alternator and power conversion device which use same
JPWO2017068636A1 (en) Integrated electric power steering apparatus and manufacturing method thereof
CN107004648B (en) Electro part carrying heat-radiating substrate
WO2019077869A1 (en) Semiconductor module
JP5300784B2 (en) Semiconductor module and rotating electric machine equipped with semiconductor module
US20100301692A1 (en) Electrical rotating machine
JP2013099213A (en) Inverter device
KR20130136472A (en) Method for interconnecting electronic power modules of a rotary electric machine and assembly of interconnected power modules obtained using said method
JP7006120B2 (en) Lead frame
JP2019195244A (en) Rotary electric machine integrated with controller
WO2008153206A1 (en) Power module
JP6988362B2 (en) Semiconductor module
WO2019077870A1 (en) Semiconductor module
WO2019077872A1 (en) Shunt resistor and production method therefor
JP5561623B2 (en) Terminal block, semiconductor device and rotating electric machine for vehicle
JP5729268B2 (en) Rotating electric machine for vehicles
JP5754646B2 (en) Rotating electric machine for vehicles
JP5754645B2 (en) Rotating electric machine for vehicles
US7439696B2 (en) Rotating electric machine and manufacturing method thereof
JP7395010B2 (en) semiconductor module
US20230096581A1 (en) Semiconductor module

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18867772

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18867772

Country of ref document: EP

Kind code of ref document: A1