WO2019048061A1

WO2019048061A1 - Carrier and optoelectronic component

Info

Publication number: WO2019048061A1
Application number: PCT/EP2017/072692
Authority: WO
Inventors: Chee Eng OOI; Ismail ITHNAIN; Choo Kean LIM; Weng Heng CHAN
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2017-09-11
Filing date: 2017-09-11
Publication date: 2019-03-14

Abstract

The invention relates to a carrier for an optoelectronic semi-conductor chip, comprising a flat top side, a flat underside and a first side surface. The carrier comprises a first lead frame section,which ranges from the top side to the underside of the carrier, embedded within an insulating material. The first lead frame section comprises a first tie bar, extending to the first side surface. At the first side surface, the insulating material is arranged between the top side of the carrier and the first tie bar as well as between the under-side of the carrier and the first tie bar.

Description

CARRIER AND OPTOELECTRONIC COMPONENT

DESCRIPTION The invention refers to a carrier for an optoelectronic semi^¬ conductor chip, an optoelectronic component and a production method thereof.

Carriers for optoelectronic semiconductor chips can comprise lead frame sections embedded within insulating materials. For instance, two lead frame sections may be used to provide means for an electrical connection of the optoelectronic sem^¬ iconductor chip. These lead frame sections may be provided in a lead frame wherein lead frame sections are connected by tie bars of the same material as the lead frames during manufac^¬ turing. The lead frame with the lead frame sections and the tie bars is then placed into a mold and an insulating materi^¬ al is molded around the lead frame sections. The tie bars are located at a top side of the carrier, as the underside is in- tended to electrically contact the carrier and therefore, the tie bars should not be placed there. After subsequent process steps, the carriers may be singularized by cutting through the insulating material and the tie bars. A problem of this approach may be, that one of the subsequent process steps during manufacturing may be covering the carrier with a cover layer. The cover layer may comprise a material which may not easily be attached to a material of the lead frame and therefore the material of the tie bar and therefore may lead to fast degrading optoelectronic components.

An assignment of the invention is to provide a carrier for an optoelectronic semiconductor chip, wherein a tie bar is embedded within the insulating material. Therefore, a cover layer may be attached to the carrier with an increased me^¬ chanical stability. Another assignment of the invention is to provide an optoelectronic device with such a carrier as well as a production method of both carrier and optoelectronic de^¬ vice .

The solution of these assignments is disclosed in the inde- pendent claims of this invention. Preferred embodiments are disclosed in the dependent claims.

A carrier for an optoelectronic semiconductor chip comprises a flat top side, a flat underside and a first side surface. The carrier further comprises a first lead frame section em^¬ bedded within an insulating material. The first lead frame section ranges from the top side to the underside to be able to provide electrical connection through the carrier. The first lead frame comprises a first tie bar extending to the first side surface. At the first side surface, the insulating material is arranged between the top side of the carrier and the first tie bar as well as between the underside of the carrier and the first tie bar. Therefore, the first tie bar is neither arranged at the top side nor the underside, providing the ability to attach a cover layer at the top side more easily and simultaneously reducing electrically contact to the tie bar at the under^¬ side .

The first lead frame section may comprise copper and may par^¬ ticularly consist of copper. As the first tie bar extends from the first lead frame section, the first tie bar may com^¬ prise copper and may particularly consist of copper as well. The first lead frame section and the first tie bar may be made of one piece.

The insulating material may be a plastic, an epoxy or a simi^¬ lar material, particularly a material that may be molded.

In one embodiment of the carrier, a metal layer forming the first lead frame section is thinned from both the top side and the underside to form the first tie bar. Therefore, the first lead frame section with a lug later forming the first tie bar may be cut or etched from a sheet metal. The lug is thinned from both sides to form the tie bar to allow for a covering of the tie bar with insulating material both at the top side and the underside. This thinning process may be per^¬ formed using an etchant.

In one embodiment of the carrier, the first lead frame sec^¬ tion comprises a first layer and a second layer connected to each other. The tie bar may be part of the first layer or of the second layer. Another possibility is that an interface of the first layer and the second layer is arranged within the tie bar. Therefore, the tie bar may be part of both layers. Usually, the tie bars of a carrier are produced by thinning of a metal layer of the lead frame sections from the under^¬ side to reduce problems with electrical contacts to the tie bars at the underside. This thinning process may be performed using an etchant. Thinning of a metal layer from both sides may lead to problems with the mechanical stability of the metal layer. Using two metal layers and connecting these lay^¬ ers may overcome these problems, as this approach allows for either thinning only the first of only the second layer from one side or for thinning both layers from one side each.

Therefore, easier to execute thinning methods may be used.

In one embodiment of the carrier, a linking layer is arranged between the first layer and the second layer, leading to the mechanical connection of the first and the second layer. In one embodiment, this linking layer comprises a conductive glue, a solder or a brazing solder. The linking layer may particularly comprise silver glue as conductive glue. As sol^¬ der, tin copper or tin silver compounds with a melting temperature between 200 and 250 centigrade may be used. As braz- ing solder, copper phosphor or copper silver phosphor compounds may be used as well as copper zinc compounds may be used . In one embodiment of the carrier, a second lead frame section ranges from the top side to the underside as well. The second lead frame section is electrically isolated from the first lead frame section comprises a second tie bar extending to the first surface. At the first side surface, the insulating material is arranged between the top side of the carrier and the second tie bar as well as between the underside of the carrier and the second tie bar. In one embodiment of the carrier, a distance between the first lead frame section and the second lead frame section is 60 per cent of the carrier thickness or less. If the lead frame sections are produced by etching them from sheet metal, the distance between the lead frame sections is in the range of the lead frame section thickness equaling the carrier thickness, as anisotropic etching does not allow for less wide etching trenches. Assembling the lead frame sections from two metal layers allows for etching trenches less wide and therefore for a decreased distance between the lead frame sections.

In one embodiment of the carrier, the insulating material forms a circumferential edge at the top side of the carrier. Therefore, insulating material is arranged at the edge of the top side of the carrier to allow for good mechanical attach^¬ ing of a cover layer.

In one embodiment of the carrier, the carrier comprises four side surfaces, particularly in a rectangular shape. At two or three side surfaces and particularly at all four side surfac^¬ es at least one tie bar is arranged in a way that the insu^¬ lating material of the carrier is arranged between the top side of the carrier and the tie bars as well as between the underside of the carrier and the tie bars.

An optoelectronic component comprises one of the described carriers, an optoelectronic semiconductor chip and a cover layer. The optoelectronic semiconductor chip is mounted at the top side of the carrier and electrically connected to the first lead frame section. This connection may be via direct placing of the optoelectronic semiconductor chip onto the first lead frame section as well as bonding a contact of the optoelectronic semiconductor chip to the first lead frame section. The optoelectronic semiconductor chip may comprise two top contacts, a top contact and a bottom contact or may be a flip chip. If the carrier comprises a second lead frame section, the optoelectronic semiconductor chip may similarly be electrically connected to the second lead frame section.

In one embodiment of the optoelectronic component, a circum^¬ ferential edge of the carrier is in direct contact with the cover layer. This is particularly beneficial if the insulat- ing material forms a circumferential edge at the top side of the carrier allowing for good mechanical attachment of the cover layer to the carrier.

The cover layer may comprise silicone, particularly silicone with converter particles.

A carrier according to the invention may be produced in a way that initially, a metal layer with a top side and an under^¬ side is provided. Subsequently, the metal layer is structured to form a lead frame section with a lug protruding from the lead frame section. This structuration may be performed by cutting a sheet metal or by an etching process. Subsequently, the lug is thinned from the top side and the underside to form a tie bar, particularly in a way that the lead frame section comprises a larger thickness than the tie bar and that an upper side of the tie bar is arranged below the top side and that a bottom side of the tie bar is arranged above the underside. The thinning may be performed with an etching step. Subsequently, the lead frame section is placed in a mold and an insulating material is molded around the lead frame section in a way that the tie bar is embedded into the insulating material. The lead frame section of the carrier may comprise two metal layers. Such a carrier may be produced by initially providing a first metal layer with a first top side and a first under^¬ side. This first metal layer is subsequently structured to form an upper lead frame section. The upper lead frame sec^¬ tion may comprise a first lug. Subsequently, the metal at the first lug may be thinned from the first top side. A second metal layer with a second top side and a second underside is provided. This second metal layer is subsequently structured to form a bottom lead frame section. The bottom lead frame section may comprise a second lug. Subsequently, the metal at the second lug may be thinned from the second underside. Ei^¬ ther the first metal layer comprises the first lug or the second metal layer comprises the second lug. It is also pos- sible, that both metal layers comprise the associated lug.

Subsequently, the upper lead frame section and the bottom lead frame section are aligned and attached to each. Thereby, the upper lead frame section and the bottom lead frame sec- tion are joined to a lead frame section. This lead frame sec^¬ tion comprises a lug, as either the upper or the bottom lead frame section or both comprise a lug. If only one lug is pre^¬ sent, this lug may work as a tie bar. If both lead frame sec^¬ tions comprise lugs, these may be joined to a tie bar.

Finally, the lead frame section is placed in a mold and an insulating material is molded around the lead frame section in a way that the tie bar is embedded into the insulating ma^¬ terial .

In one embodiment, the metal layers are attached to each oth^¬ er by conductive glue, particularly silver glue, by a soldering process or by a brazing process. For the soldering pro^¬ cess, a tin copper compound with 96.5 to 97.5 weight per cent tin and 2.5 to 3.5 weight per cent copper may be used. Alter^¬ natively, a tin silver compound with 97.0 to 97.5 weight per cent tin and 3.0 to 3.5 weight per cent silver may be used. For the brazing process, a copper phosphor compound with par- ticularly 93.5 to 94.1 weight per cent copper and 5.9 to 6.5 weight per cent phosphor or a copper silver phosphor compound with particularly 90.8 to 92.2 weight per cent copper, 1.5 to 2.5 weight per cent silver and 5.9 to 6.7 weight per cent phosphor may be used as well as a copper zinc compound.

In one embodiment of the invention, the metal layers comprise a plurality of lead frame sections connected with lugs acting as tie bars. The insulating material is molded in a way that the tie bars are covered by the insulating material. Individ^¬ ual carries may be singularized and particularly are singu- larized by cutting through the insulating material and the tie bars. To produce an optoelectronic component, a carrier is formed. Subsequently, an optoelectronic semiconductor chip is placed on the carrier. The optoelectronic semiconductor chip may be electrically connected to one or more lead frame sections of the carrier. Subsequently, the optoelectronic semiconductor chip and the carrier are covered with a cover layer. The cover layer may be arranged adjacent to the insulating material at an edge of the carrier circumferentially arranged around the carrier. The above described properties, features and advantages of this invention as well as the method of obtaining them, will be more clearly and obviously understandable in the context of the following description of the embodiments, which are explained in more detail in the context of the Figures.

In schematic illustration show Fig. 1 a top view of a carrier; Fig. 2 a side view of the carrier;

Fig. 3 a cross section of the carrier; Fig. 4 a cross section of another carrier;

Fig. 5 a cross section of another carrier; Fig. 6 a top view of another carrier;

Fig. 7 a top view of another carrier;

Fig. 8 a cross section of the carrier;

Fig. 9 a cross section of an optoelectronic device;

Figs. 10 to 12 a production method of a carrier; Figs. 13 and 14 an alternative production method of a

carrier ;

Fig. 15 a lead frame with lead frame sections and tie bars; Fig. 16 the lead frame after a thinning step;

Fig. 17 the lead frame in a mold; and

Fig. 18 an intermediate product during production of an op- toelectronic device.

Fig. 1 shows a top view of a carrier 1. The carrier 1 comprises a top side 2. A first lead frame section 5 is visible at the top side 2 of the carrier 1. Around the first lead frame section 5, an insulating material 6 is arranged in a way that the first lead frame section 5 and the insulating material 6 form the carrier 1. Within the insulating material 6, and indicated with dashed lines, as it is invisible from the top, the first lead frame section 5 comprises a first tie bar 7, protruding from the first lead frame section 5 and ex^¬ tending to a side surface 4 of the carrier 1. The lead frame section 5 as well as the tie bar 7 may comprise copper or may be made of copper. The insulating material 6 may be plastic or an epoxy compound.

Fig. 2 shows a side view of the carrier 1 of Fig. 1. The side surface 4 is arranged between the top side 2 and a bottom side 3 of the carrier 1. At the side surface 4, the first tie bar 7 is arranged in a way that the insulating material 6 is arranged between the first tie bar 7 and the top side 2 as well as between the first tie bar 7 and the bottom side.

Within the carrier, the first lead frame section 5 is indi^¬ cated with dashed lines.

Fig. 3 shows a cross section of the carrier 1 of Figs. 1 and 2 through the first tie bar 7. The first tie bar 7 protrudes from the first lead frame section 5. Above and below the first tie bar 7, the insulating material 6 is arranged.

Therefore, the first tie bar 7 is located spaced apart from the top side 2 as well as the bottom side 3. Fig. 4 shows a cross section of a carrier 1, which is partially similar to the carrier 1 of Figs. 1 to 3. The first lead frame section 5 is composed of a first layer 8 and a second layer 9 linked to each other. The first tie bar 7 is part of the second layer 9. The first tie bar may also be part of the first layer 8 instead of the second layer 9. Both first layer 8 and second layer 9 may comprise or be composed of copper.

Fig. 5 shows a cross section of another embodiment of the carrier 1, wherein the first lead frame section 1 is composed of a first layer 8 and a second layer 9 as well. In this em^¬ bodiment, the first tie bar 7 is also composed of the two layers 8, 9. As an optional feature, a linking layer 10 is arranged be^¬ tween the first layer 8 and the second layer 9. In one embod^¬ iment, the linking layer 10 comprises a conductive glue, a solder or a brazing solder. The linking layer 10 may particu- larly comprise silver glue as conductive glue. As solder, tin copper or tin silver compounds with a melting temperature between 200 and 250 centigrade may be used. As brazing solder, copper phosphor or copper silver phosphor compounds may be used as well as copper zinc compounds may be used.

In Figs. 4 and 5, the insulating material 6 is arranged above and below the first tie bar 7 similar to Fig. 3. Therefore, the first tie bar 7 is located spaced apart from the top side 2 as well as the bottom side 3.

Fig. 6 shows a top view of another embodiment of a carrier 1. Additionally to the first lead frame section 5 with the first tie bar 7, the carrier 1 comprises a second lead frame sec- tion 11 with a second tie bar 12 within the insulating material 6, indicated with dashed lines, as it is invisible from the top. The second tie bar 12 protrudes from the second lead frame section 11 and extends to the side surface 4 of the carrier 1. Additional tie bars 19 protrude from the first lead frame section 5 and the second lead frame section 11 and extend to a second surface 16 of the carrier 1.

As shown in Fig. 6, the top side 2 of the carrier 1 comprises a circumferential edge 15 formed by the insulating material 6, as any tie bar 7, 12, 19 is embedded within the insulating material 6.

Fig. 7 shows a top view of another embodiment of a carrier 1, mainly similar to the embodiment of Fig. 6. The carrier 1 comprises 4 side surfaces 4, 16, 17, 18. At every side sur^¬ face 4, 16, 17, 18 at least one tie bar 7, 12, 19 is arranged in a way described for the previous embodiments, particularly embedded within the insulating material 6. The first lead frame section 5 comprises two first tie bars 7 extending to the first surface 4, two tie bars 19 extending to the second surface 16 and one tie bar 19 extending to a third surface 17. The second lead frame section 11 comprises one second tie bar 12 extending to the first surface 4, two tie bars 19 ex- tending to the second surface 16 and one tie bar 19 extending to a fourth surface 18. The carrier 1 again comprises a cir^¬ cumferential edge 15 formed by the insulating material 6 at the top side 2 of the carrier 1.

The carriers 1 of Figs. 6 and 7 may comprise lead frame sec^¬ tions 5, 11 similar to the lead frame section 5 of Figs. 1 to 3. Alternatively, the carriers 1 of Figs. 6 and 7 may com^¬ prise lead frame sections 5, 11 similar to the lead frame section 5 of Figs. 4 or 5, consisting of two metal layers 8, 9 and optionally a linking layer 10.

The tie bars 7, 12, 19 of the carriers 1 of Figs. 6 and 7 are arranged in a way that two tie bars 7, 12, 19 are arranged opposite to one another. Therefore, a plurality of carriers 1 may be produced in one step with the tie bars 7, 12, 19 link^¬ ing the first lead frame sections 5 and the second lead frame sections 11 to increase stability during manufacturing. Fig. 8 shows a cross section of a carrier 1 similar to the carrier 1 of Fig. 7. The first lead frame section 5 and the second lead frame section 12 consist of two metal layers 8, 9. A distance 13 between the lead frame sections is below 60 per cent of the carrier thickness 14, particularly 50 per cent of the carrier thickness 14. As an isotropic etching of a sheet metal allows for a distance between remaining parts of the metal of approximately 50 to 60 per cent of the thick^¬ ness of the sheet metal, a distance 13 of below 60 per cent of the carrier thickness 14 is achievable, if the lead frame sections 5, 11 are composed of two layers 8, 9.

Fig. 9 shows a cross section of an optoelectronic component 20 with a carrier 1, particularly with the carrier of Fig. 7. The cross section is guided through the tie bars 19 extending to the third side 17 and the fourth side 18. An optoelectron^¬ ic semiconductor chip 21 is arranged on top of the carrier 1, particularly on top of the first lead frame section 5. The optoelectronic semiconductor chip 21 is electrically connect- ed to the second lead frame section 11 with a bond wire 23. On top of the carrier 1, covering the carrier 1 and the optoelectronic semiconductor chip 21, a cover layer 22 is arranged. The optoelectronic semiconductor chip 21 may be elec- trically connected to the lead frame sections 5, 11 using two bond wired. The optoelectronic semiconductor chip 21 may also be a flip chip without the need to use a bond wire for elec^¬ tric contact. The cover layer 22 may comprise silicone and may particularly consist of converter particles capable of converting light emitted from the optoelectronic semiconductor chip 21 to an^¬ other wavelength immersed within a silicone based matrix material .

If the carrier 1 comprises a circumferential edge 15 made of the insulating material 6, the cover layer 22 may be in di^¬ rect contact with the insulating material 6 at the circumfer^¬ ential edge 15, allowing for a good mechanical connection of carrier 1 and cover layer 22. Therefore, less oxygen from the ambiance leaks into the optoelectronic device 20, decreasing the risk of oxidation of parts of the lead frame sections 5, 11 and thusly increasing the life-time of the optoelectronic component .

Fig. 10 shows a metal layer 24 indicated with a dashed line. The metal layer 24 comprises a top side 25 and has been structured into a lead frame section 27 with two lugs 28 pro^¬ truding from the lead frame section 27. Another number of lugs 28 is also possible.

Fig. 11 shows a cross section of the lead frame section 27 of Fig. 10 through the lugs 28. The lead frame section 27 made of the metal layer 24 comprises an underside 26. The lugs 28 are indicated by dashed lines, as the metal layer 24 has been thinned from the top side 25 and the underside 26 at the lugs 28 to form tie bars 29, which are less thick than the lead frame section 27. Fig. 12 shows the lead frame section 27 of Fig. 11 within a mold 30. The areas where the lugs 28 have been thinned are filled with an insulating material 6 to form the carrier 1.

The production method of Figs. 10 to 12 leads to a carrier 1 in which the lead frame section 27 may work as the first lead frame section 5 or the second lead frame section 11 previous^¬ ly described, consisting of a single metal layer.

Fig. 13 shows a first metal layer 31 indicated with a dashed line and a second metal layer 36 indicated with a dashed line. The first metal layer 31 comprises a first top side 32 and has been structured into an upper lead frame section 34 with two first lugs 35 protruding from the upper lead frame section 34. Another number of first lugs 35 is also possible. The second metal layer 36 comprises a second top side 37 and has been structured into a bottom lead frame section 39 with two second lugs 40 protruding from the upper lead frame sec- tion 34. Another number of second lugs 40 is also possible.

The shape of the upper lead frame section 34 with the first lugs 35 and the bottom lead frame section 39 with the second lugs 40 is similar. The first metal layer 31 is thinned from the first top side 32 at the first lugs 35. The second metal layer 36 is thinned from a bottom side at the second lugs 40.

Fig. 14 shows the first metal layer 31 joined to the second metal layer 36. A first underside of the first metal layer 31 is connected to the second top side 37 of the second metal layer 36. As the second metal layer 36 has been thinned from the second underside 38, the lugs 35, 40 form tie bars 41 which are arranged below the first top side 32 and above the second underside 38. The insulating material 6 is again mold- ed around the lead frame section 34, 39 with the tie bars 41.

The production method of Figs. 13 and 14 may be applied for lead frames 5, 11 consisting of two layers 8, 9. In one em- bodiment, the metal layers 31, 36 are attached to each other by conductive glue, particularly silver glue, by a soldering process or by a brazing process. For the soldering process, a tin copper compound with 96.5 to 97.5 weight per cent tin and 2.5 to 3.5 weight per cent copper may be used. Alternatively, a tin silver compound with 97.0 to 97.5 weight per cent tin and 3.0 to 3.5 weight per cent silver may be used. For the brazing process, a copper phosphor compound with particularly 93.5 to 94.1 weight per cent copper and 5.9 to 6.5 weight per cent phosphor or a copper silver phosphor compound with particularly 90.8 to 92.2 weight per cent copper, 1.5 to 2.5 weight per cent silver and 5.9 to 6.7 weight per cent phos^¬ phor may be used as well as a copper zinc compound. Fig. 15 shows a top view of a frame 42 with multiple first lead frame sections 5 and second lead frame sections 11 in a 2 x 2 arrangement. It is possible to allow for far more lead frame sections 5, 11 within one frame 42. The lead frame sec^¬ tions 5, 11 are connected to each other and to the frame by tie bars 19. Each first lead frame section 5 is not connected to exactly one second lead frame section 11 to allow for electrically insulated lead frame sections 5, 11 within one carrier . Fig. 16 shows the frame 42 of Fig. 15 after the tie bars 19 have been thinned. Both the production method of Figs. 10 to 12 and of Figs. 13 and 14 may be applied to fabricate the frame 42. Fig. 17 shows a cross section of the frame 42 through the dashed line of Fig. 16 after the frame 42 has been put into a mold 30. The frame 42 with the second lead frame sections 11 is fabricated from two metal layers 8, 9. Between the second lead frame sections 11 a tie bar 19 is arranged. As the tie bar 19 is connected to a first lead frame section 5, the tie bar 19 does not extend between both second lead frame sec^¬ tions 11. The cavities 43 between the mold 30 and the frame 42 with the second lead frame sections 11 and the tie bars 19 may be filled with an insulating material.

Fig. 18 shows the frame 42 after the cavities 43 of Fig. 17 have been filled. The tie bars 19 are no longer visible as they are embedded within the insulating material 6. Optoelec^¬ tronic semiconductor chips 21 are placed on top of the first lead frame sections 5 and electrically connected to the sec^¬ ond lead frame sections 11 using bond wires 23.

The whole frame 42 may now be covered with a cover layer sim^¬ ilar to the cover layer 22 of Fig. 9. The frame 42 may then be singularized into optoelectronic components similar to the optoelectronic component of Fig. 9 by cutting along the dashed lines. The cut thereby is guided through the insulat^¬ ing material 6 and the tie bars 19.

It is also possible to singularize carriers 1 after the mold^¬ ing step prior to the placement and connection of the optoe- lectronic semiconductor chips 21.

Although the invention was described and illustrated in more detail using preferred embodiments, the invention is not lim^¬ ited to these. Variants of the invention may be derived by a person skilled in the art from the described embodiments without leaving the scope of the invention.

REFERENCE NUMERALS

1 carrier

2 top side

3 bottom side

4 first side surface

5 first lead frame section

6 insulating material

7 first tie bar

8 first layer

9 second layer

10 linking layer

11 second lead frame section

12 second tie bar

13 distance

14 carrier thickness

15 circumferential edge

16 second side surface

17 third side surface

18 fourth side surface

19 tie bar

20 optoelectronic component

21 optoelectronic semiconductor chip

22 cover layer

23 bond wire

24 metal layer

25 top side

26 underside

27 lead frame section

28 lug

29 tie bar

30 mold

31 first metal layer

32 first top side

33 first underside

34 upper lead frame section

35 first lug

36 second metal layer second top side

second underside

bottom lead frame section second lug

tie bar

frame

cavity

Claims

A carrier (1) for an optoelectronic semiconductor chip (21), wherein the carrier (1) comprises a flat top side (2), a flat underside (3) and a first side surface (4), wherein the carrier (4) comprises a first lead frame sec^¬ tion (5) embedded within an insulating material (6), wherein the first lead frame section (5) ranges from the top side (2) to the underside (3) of the carrier (1), wherein the first lead frame section (5) comprises a first tie bar (7), wherein the first tie bar (7) extends to the first side surface (4), wherein at the first side surface (4), the insulating material (6) is arranged be^¬ tween the top side (2) of the carrier (1) and the first tie bar (7), and wherein at the first side surface (4), the insulating material (6) is arranged between the un^¬ derside (3) of the carrier (1) and the first tie bar (7) .

The carrier (1) according to claim 1, wherein the first lead frame section (5) with the first tie bar (7) com^¬ prises a first layer (8) and a second layer (9) .

The carrier (1) according to claim 2, wherein a linking layer (10) is arranged between the first layer (8) and the second layer (9) .

The carrier (1) according to claim 3, wherein the linking layer (10) comprises a conductive glue, a solder or a brazing solder.

The carrier (1) according to any of the preceding claims, further comprising a second lead frame section (11), wherein the second lead frame section (11) ranges from the top side (2) to the underside (3) of the carrier (1), wherein the second lead frame section (11) comprises a second tie bar (12), wherein the second tie bar (12) ex^¬ tends to the first side surface (4), wherein at the first side surface (4), the insulating material (6) is arranged between the top side (2) of the carrier (1) and the sec^¬ ond tie bar (12), and wherein at the first side surface (4), the insulating material (6) is arranged between the underside (3) of the carrier (1) and the second tie bar

(12) .

6. The carrier (1) according to claim 5, wherein a distance

(13) between the first lead frame section (5) and the second lead frame section (12) is 60 per cent of the car^¬ rier thickness (14) or less.

7. The carrier (1) according to any of the preceding claims, wherein the insulating material (6) forms a circumferential edge (15) at the top side (2) of the carrier (1) .

8. The carrier (1) according to any of the preceding claims, wherein the carrier (1) comprises four side surfaces (4, 16, 17, 18) and wherein at least one tie bar (7, 12, 19) is arranged at each side surface (4, 16, 17, 18) in a way that the insulating material (6) is arranged between the top side (2) of the carrier (1) and the tie bars (7, 12, 19), and that the insulating material (6) is arranged be^¬ tween the underside (3) of the carrier (1) and the tie bars (7, 12, 19) .

9. An optoelectronic component (20) comprising a carrier (1) according to any of the preceding claims, further comprising an optoelectronic semiconductor chip (21) and a cover layer (22), wherein the optoelectronic semiconduc^¬ tor chip (21) is mounted on the top side (2) of the car^¬ rier (1) and electrically connected to the first lead frame section (5), wherein the cover layer (22) covers the optoelectronic semiconductor chip (21) and the top side (2) of the carrier (1) .

10. The optoelectronic component (20) of claim 9, wherein a circumferential edge (15) of the carrier (1) is in direct contact with the cover layer (22) . A method for producing a carrier (1) with the steps:

- Providing of a metal layer (24) with a top side

(25) and an underside (26);

- Structuration of the metal layer (24) to form a

lead frame section (27) with a lug (28) protruding from the lead frame section (27);

- Thinning of the metal at the lug (28) from the top side (25) and the underside (26) to form a tie bar (29) ;

- Placing the lead frame section (27) in a mold (30) and molding an insulating material (6) around the lead frame section (27) in a way that the tie bar (29) is embedded into the insulating material (6) .

A method for producing a carrier (1) with the steps:

- Providing of a first metal layer (31) with a first top side (32) and a first underside (33);

- Structuration of the first metal layer (31) to form an upper lead frame section (34) with a first lug (35) ;

- Thinning of the metal at the first lug (35) from the first top side (32);

- Providing of a second metal layer (36) with a sec^¬ ond top side (37) and a second underside (38);

- Structuration of the second metal layer (36) to

form a bottom lead frame section (39) with a second lug (40);

- Thinning of the metal at the second lug (40) from the second underside (38);

- Alinging the upper lead frame section (34) with the first lug (35) and the bottom lead frame section (39) with the second lug (40);

- Attaching the first metal layer (31) to the second metal layer (36) , wherein the upper lead frame sec^¬ tion (34) and the bottom lead frame section (39) are joined to a lead frame section (34, 39) and wherein the first lug (36) and the second lug (40) are joined to a tie bar (41);

- Placing the lead frame section (35, 39) in a mold (30) and molding an insulating material (6) around the lead frame section (34, 39) in a way that the tie bar (41) is embedded into the insulating mate^¬ rial ( 6) .

The method according to claim 12, wherein the attaching of the first metal layer (35) and the second metal layer (39) is performed using a conductive glue, a soldering process or a brazing process.

The method according to claims 11 to 13, wherein the met^¬ al layers (24, 31, 36) comprise a plurality of lead frame sections (27, 34, 39), wherein the lugs (28, 35, 40) act as tie bars (29, 41), wherein the insulating material (6) is molded in a way that the tie bars (29, 41) are covered by the insulating material (6), and wherein the individu^¬ al carriers (1) may be singularized by cutting through the insulating material (6) and the tie bars (29, 41) .

A method for producing an optoelectronic component (20) comprising the steps:

- Forming of a carrier (1) according to claims 11 to 14;

- Placing of an optoelectronic semiconductor chip

(21) on the carrier (1);

- Covering the optoelectronic semiconductor chip (21) and the carrier (1) with a cover layer (22) .