WO2019045652A3 - Photodetector - Google Patents

Photodetector Download PDF

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Publication number
WO2019045652A3
WO2019045652A3 PCT/SG2018/050446 SG2018050446W WO2019045652A3 WO 2019045652 A3 WO2019045652 A3 WO 2019045652A3 SG 2018050446 W SG2018050446 W SG 2018050446W WO 2019045652 A3 WO2019045652 A3 WO 2019045652A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor region
type semiconductor
photodetector
substrate
electrically connected
Prior art date
Application number
PCT/SG2018/050446
Other languages
French (fr)
Other versions
WO2019045652A2 (en
Inventor
Dao Hua Zhang
Jinchao TONG
Landobasa Yosef Mario Alexander Lumban TOBING
Shupeng QIU
Original Assignee
Nanyang Technological University
Thales Solutions Asia Pte Ltd
Centre National De La Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Technological University, Thales Solutions Asia Pte Ltd, Centre National De La Recherche Scientifique filed Critical Nanyang Technological University
Publication of WO2019045652A2 publication Critical patent/WO2019045652A2/en
Publication of WO2019045652A3 publication Critical patent/WO2019045652A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

A photodetector (10) is provided. The photodetector (10) includes a substrate (12), a p-type semiconductor region (14) on the substrate (12), an intrinsic semiconductor region (16) on the p-type semiconductor region (14), an n-type semiconductor region (18) on the intrinsic semiconductor region (16), a surface plasmonic structure (20) on the n-type semiconductor region (18), a cathode (22) electrically connected to the n-type semiconductor region (18), and an anode (24) electrically connected to the p-type semiconductor region (14).
PCT/SG2018/050446 2017-09-04 2018-09-04 Photodetector WO2019045652A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201707146W 2017-09-04
SG10201707146W 2017-09-04

Publications (2)

Publication Number Publication Date
WO2019045652A2 WO2019045652A2 (en) 2019-03-07
WO2019045652A3 true WO2019045652A3 (en) 2019-04-04

Family

ID=63579727

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2018/050446 WO2019045652A2 (en) 2017-09-04 2018-09-04 Photodetector

Country Status (1)

Country Link
WO (1) WO2019045652A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584646B (en) * 2020-05-26 2022-06-21 湖南大学 Near-infrared thermal electron photodetector and preparation method thereof
CN113707748B (en) * 2021-08-27 2023-02-17 中国科学院半导体研究所 Epitaxial wafer and photoelectric detector chip
CN118465515B (en) * 2024-07-10 2024-10-01 南京大学 Method for detecting electric field inside semiconductor wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8750653B1 (en) * 2010-08-30 2014-06-10 Sandia Corporation Infrared nanoantenna apparatus and method for the manufacture thereof
US20150028216A1 (en) * 2012-03-29 2015-01-29 Asahi Kasei Microdevices Corporation Light Receiving Device
US20160365463A1 (en) * 2015-06-15 2016-12-15 Korea Research Institute Of Standards And Science Ir photodetector using metamaterial-based on an antireflection coating to match the impedance between air and sp resonator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8750653B1 (en) * 2010-08-30 2014-06-10 Sandia Corporation Infrared nanoantenna apparatus and method for the manufacture thereof
US20150028216A1 (en) * 2012-03-29 2015-01-29 Asahi Kasei Microdevices Corporation Light Receiving Device
US20160365463A1 (en) * 2015-06-15 2016-12-15 Korea Research Institute Of Standards And Science Ir photodetector using metamaterial-based on an antireflection coating to match the impedance between air and sp resonator

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
AUGEL L ET AL: "Ge PIN photodetectors with nanohole arrays for refractive index sensing", 2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), IEEE, 23 August 2017 (2017-08-23), pages 161 - 162, XP033237328, DOI: 10.1109/GROUP4.2017.8082246 *
FISCHER INGA A ET AL: "Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection", VISUAL COMMUNICATIONS AND IMAGE PROCESSING; 20-1-2004 - 20-1-2004; SAN JOSE,, vol. 9654, 15 June 2015 (2015-06-15) - 15 June 2015 (2015-06-15), pages 965404 - 965404, XP060056055, ISBN: 978-1-62841-730-2, DOI: 10.1117/12.2192161 *
PETERS DAVID W ET AL: "Application of plasmonic subwavelength structuring to enhance infrared detection", VISUAL COMMUNICATIONS AND IMAGE PROCESSING; 20-1-2004 - 20-1-2004; SAN JOSE,, vol. 8994, 19 February 2014 (2014-02-19), pages 899419 - 899419, XP060036139, ISBN: 978-1-62841-730-2, DOI: 10.1117/12.2040727 *
QIU SHUPENG ET AL: "Surface Plasmon Enhancement on Infrared Photodetection", PROCEDIA ENGINEERING, vol. 140, 1 January 2016 (2016-01-01), pages 152 - 158, XP029456916, ISSN: 1877-7058, DOI: 10.1016/J.PROENG.2015.10.151 *
SHANG Y. ET AL.: "Study on High Speed Photodetectors with plasmonics Filter", SPIE, PO BOX 10 BELLINGHAM WA 98227-0010 USA, 1 January 2009 (2009-01-01), XP040505326 *

Also Published As

Publication number Publication date
WO2019045652A2 (en) 2019-03-07

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