CN111584646B - Near-infrared thermal electron photodetector and preparation method thereof - Google Patents
Near-infrared thermal electron photodetector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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Abstract
The invention discloses a near-infrared thermal electron optical detector and a preparation method thereof, wherein the near-infrared thermal electron optical detector comprises: the SOI wafer is used as a substrate, the thickness of a top silicon film of the SOI wafer is 5-20 microns, an oxygen buried layer is arranged in the SOI wafer, a thinning region is arranged below the inside of the SOI wafer and separates the oxygen buried layer, and a bottom electrode is arranged on the periphery of the thinning region; the nano electrode is arranged on the top silicon film and forms a Schottky junction with the top silicon film; the silicon nitride protective layer is arranged on the top silicon film and wraps the nano electrode, and a contact hole used for connecting an external circuit is formed in the silicon nitride protective layer. The invention can reduce the scattering loss in the process of transporting hot electrons and improve the photoelectric response rate and response speed of the device.
Description
Technical Field
The invention relates to the technical field of photodetectors, in particular to a near-infrared thermal electron photodetector and a preparation method thereof.
Background
The photoelectric detector has wide application in various fields of military and national economy, and the current mainstream semiconductor photoelectric detector has the working principle that: when the energy of an incident photon is greater than the forbidden band width of the semiconductor (hv > Eg), the photon excites an electron to the conduction band, and the non-equilibrium electron and hole generated in the space charge region are quickly separated by the built-in electric field, thereby generating a photocurrent. The condition that the energy of incident photons is larger than the forbidden band width of a semiconductor is a necessary condition of photoelectric response, so that the optical detectors cannot detect or capture photons with energy smaller than the forbidden band width of the semiconductor, and the application of the optical detectors in the fields of near infrared detection, optical communication and the like is greatly limited. For example, silicon has a forbidden band width of 1.12eV and a response wavelength of typically less than 1.1 μm.
The surface plasmon resonance nanostructure can greatly enhance the interaction of light and substances under the diffraction limit scale, and can greatly enhance the light capture capability of the photoelectric device. On one hand, a large number of hot electrons (or unbalanced electrons) generated in the surface plasmon relaxation process can be converted into conduction electrons under a certain device framework, so that the conversion from plasmons to conduction current is realized. On the other hand, the focusing effect of the plasmon nano antenna enables the device to be coupled and absorb more photons, so that the photoelectric conversion performance is enhanced. The photon energy required to excite hot electrons can be less than the forbidden bandwidth of the semiconductor, and the relaxation time of hot electrons in metal is less than 1ps, theoretically the response frequency can reach THz.
However, after plasmon induced thermal electrons are generated, the plasmon induced thermal electrons need to reach the collecting electrode end through transport processes such as emission at the interface, diffusion in the semiconductor and the like, so that the device can generate response current. However, the great scattering loss generated when the hot electrons are transported in the semiconductor enables most of the hot electrons to be recombined, so that the scattering loss in the transporting process of the hot electrons is caused, and the response speed of the device is greatly reduced.
Disclosure of Invention
Therefore, the invention aims to provide a near-infrared thermal electron photodetector and a preparation method thereof, so as to reduce scattering loss in a thermal electron transport process and improve the response speed of a device.
A near-infrared thermionic photodetector comprising:
the SOI wafer is used as a substrate, the thickness of a top silicon film of the SOI wafer is 5-20 microns, an oxygen buried layer is arranged in the SOI wafer, a thinning region is arranged below the inside of the SOI wafer and separates the oxygen buried layer, and a bottom electrode is arranged on the periphery of the thinning region;
the nano electrode is arranged on the top silicon film, and the nano electrode and the top silicon film form a Schottky junction;
the silicon nitride protective layer is arranged on the top silicon film and wraps the nano electrode, and a contact hole used for connecting an external circuit is formed in the silicon nitride protective layer.
A method for preparing a near-infrared thermionic photodetector comprises the following steps:
taking an n-type SOI (silicon on insulator) sheet with the thickness of a top silicon film of 5-20 microns as a substrate, wherein an oxygen burying layer is arranged in the SOI sheet;
manufacturing a nano electrode on the top silicon film;
depositing a silicon nitride protective layer on the top silicon film, wrapping the nano electrode by the silicon nitride protective layer, etching a contact hole on the silicon nitride protective layer, wherein the contact hole is used for connecting the nano electrode to an external circuit, and then manufacturing a protective barrier layer on the surface of the silicon nitride protective layer;
preparing an oxide layer at the bottom of the SOI wafer to be used as a mask for defining a bottom thinning area, and etching the oxide layer in the thinning area;
thinning the bottom silicon of the SOI wafer by using the oxide layer as a mask and adopting a water bath method to form the thinning area;
removing the buried oxide layer of the thinning area by adopting a reactive ion etching method;
and depositing a metal bottom electrode at the periphery of the thinning area.
According to the near-infrared thermal electron photodetector and the preparation method thereof provided by the invention, when near-infrared light enters, a strong electric field is formed in the nano electrode due to a plasmon effect, thermal electrons are generated in the nano electrode and are excited to diffuse to the interface between the electrode and the silicon film, the thermal electrons with energy larger than a Schottky barrier cross the interface, and reach the bottom electrode through transportation in the ultrathin silicon film to form response current. The detector can detect near infrared light functionally and can be designed into a polarization sensitive device and an insensitive device.
In addition, the near infrared thermionic optical detector according to the present invention may have the following additional features:
further, the shape of the nano electrode is any one of a grid strip shape, a grid shape and a fractal structure.
Furthermore, the width of the nano electrode is set to be 100-200 nm according to the matching requirement of the nano electrode and the detection wavelength, and the height of the nano electrode is 20-50 nm.
Further, the nano electrode is made of a noble metal material.
Further, the material of the nano electrode adopts gold or silver.
Further, the nano electrode is deposited on the top silicon film in an electron beam evaporation deposition mode, and the shape of the nano electrode is formed in a nano stamping or electron beam exposure mode.
Further, the potential barrier of the schottky junction is about 0.5 eV.
In addition, the method for manufacturing the near-infrared thermionic photodetector according to the present invention may further have the following additional technical features:
further, the step of manufacturing the nano-electrode on the top silicon film specifically comprises:
and manufacturing a nano electrode on the top silicon film, wherein the width of the nano electrode is 100-200 nanometers, the height of the nano electrode is 20-50 nanometers, the nano electrode is deposited on the top silicon film in an electron beam evaporation deposition mode, the shape of the nano electrode is any one of a grid strip shape, a grid shape and a fractal structure, and the shape of the nano electrode is formed in a nano imprinting or electron beam exposure mode.
Further, the step of preparing an oxide layer on the bottom of the SOI wafer specifically includes:
and preparing an oxide layer at the bottom of the SOI sheet by a wet-heat oxidation method, wherein the thickness of the oxide layer is about 300 nanometers.
Drawings
The above and/or additional aspects and advantages of embodiments of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a near-infrared thermionic photodetector according to a first embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a near-infrared thermionic optical detector according to an embodiment of the present invention includes: n-type SOI chip 11, nano-electrode 12, and silicon nitride protective layer 13.
The SOI wafer 11 is used as a substrate, the thickness of a top silicon film 111 of the SOI wafer 11 is 5-20 microns, a buried oxide layer 14 is arranged in the SOI wafer 11, a thinning region 15 is arranged below the interior of the SOI wafer 11, the thinning region 15 separates the buried oxide layer 14, and a bottom electrode 16 is arranged on the periphery of the thinning region 15. Preferably, said thinned area 13 is trapezoidal in shape.
The nano-electrode 12 is disposed on the top silicon film 111, the nano-electrode 12 and the top silicon film 111 form a schottky junction, preferably, the barrier of the schottky junction is about 0.5eV, for example, 0.5eV, and as long as the hot electron energy is higher than 0.5eV, it is possible to form a response current by crossing the schottky barrier, so that the device can realize a response to the near infrared light wave. The nano-electrodes 12 can be deposited on the top silicon film 111 by electron beam evaporation deposition.
The silicon nitride protective layer 13 is disposed on the top silicon film 111, the silicon nitride protective layer 13 wraps the nano-electrode 12, and a contact hole (not shown) for connecting an external circuit is disposed on the silicon nitride protective layer 13.
The shape of the nano-electrode 12 is any one of a grid-shaped electrode, a grid-shaped electrode and a fractal structure, and the grid-shaped electrode has polarization sensitivity and can distinguish the polarization direction of polarized light. The grid shape, the fractal structure and the like have polarization insensitivity and can detect light in each polarization direction. The shape of the nano-electrode 12 may be formed by means of nano-imprinting or electron beam exposure.
The width of the nano electrode 12 can be set to be 100-200 nm according to the matching requirement of the detection wavelength, and the height of the nano electrode 12 is 20-50 nm.
The nano-electrode 12 may be made of a noble metal material, such as gold or silver.
The preparation method of the near-infrared thermionic photodetector comprises the following steps:
step 1, taking an n-type SOI sheet with the top silicon film thickness of 5-20 microns as a substrate, wherein a buried oxide layer (namely a BOX layer) is arranged in the SOI sheet.
And 2, manufacturing a nano electrode on the top silicon film, wherein the width of the nano electrode is 100-200 nanometers, the height of the nano electrode is 20-50 nanometers, the size of the electrode can be adjusted according to the wavelength of light to be detected in design, the nano electrode is deposited on the top silicon film in an electron beam evaporation deposition mode, so that a response peak moves in a communication waveband, a high photoelectric response rate is further obtained for the detection wavelength, the nano electrode material adopts gold, silver and other precious metal materials to be beneficial to exciting plasmon resonance and inducing generation of hot electrons, the shape of the nano electrode can be any one of a grid-shaped structure, a grid-shaped structure and a fractal structure according to the detection requirement, and the shape of the nano electrode is formed in a nano imprinting or electron beam exposure mode.
And 3, depositing a silicon nitride protective layer on the top silicon film after the nano electrode is manufactured, wrapping the nano electrode through the silicon nitride protective layer, etching a contact hole on the silicon nitride protective layer, wherein the contact hole is used for connecting the nano electrode to an external circuit, and then manufacturing a protective barrier layer on the surface of the silicon nitride protective layer, wherein the purpose of manufacturing the protective barrier layer is to further protect the nano electrode in the subsequent silicon wafer thinning process, and the protective barrier layer can be made of a PROTEK material.
And 4, preparing an oxide layer at the bottom of the SOI wafer by adopting a wet-heat oxidation method, using the oxide layer as a mask for defining a bottom thinning area, and etching the oxide layer positioned in the thinning area, wherein the thickness of the oxide layer is about 300 nanometers, such as 300 nanometers.
And 5, thinning the bottom silicon of the SOI sheet by using the oxide layer as a mask and adopting a water bath method to form the thinning area.
And 6, removing the buried oxide layer of the thinning area by adopting a reactive ion etching method (RIE).
And 7, depositing a metal bottom electrode on the periphery of the thinning area to form ohmic contact.
According to the near-infrared thermal electron photodetector and the preparation method thereof, when near-infrared light is incident, a strong electric field is formed in the nano electrode due to a plasmon effect, thermal electrons are excited to be generated in the nano electrode and are diffused to an interface between the electrode and a silicon film, the thermal electrons with energy larger than a Schottky barrier cross the interface with organic rate and are transported in the ultrathin silicon film to reach a bottom electrode, and response current is formed. The detector can detect near infrared light functionally and can be designed into a polarization sensitive device and an insensitive device.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (3)
1. A method for preparing a near-infrared thermionic photodetector, the near-infrared thermionic photodetector comprising:
the SOI wafer is used as a substrate, the thickness of a top silicon film of the SOI wafer is 5-20 microns, an oxygen buried layer is arranged in the SOI wafer, a thinning region is arranged below the inside of the SOI wafer and separates the oxygen buried layer, and a bottom electrode is arranged on the periphery of the thinning region;
the nano electrode is arranged on the top silicon film, the nano electrode and the top silicon film form a Schottky junction, the shape of the nano electrode is any one of a grid bar shape, a grid shape and a fractal structure, the width of the nano electrode is 100-200 nanometers, and the height of the nano electrode is 20-50 nanometers;
the silicon nitride protective layer is arranged on the top silicon film and wraps the nano electrode, and a contact hole for connecting an external circuit is formed in the silicon nitride protective layer;
the nano electrode is deposited on the top silicon film in an electron beam evaporation deposition mode, and the shape of the nano electrode is formed in a nano imprinting or electron beam exposure mode;
the potential barrier of the Schottky junction is 0.5 eV;
the preparation method comprises the following steps:
taking an n-type SOI (silicon on insulator) sheet with the thickness of a top silicon film of 5-20 microns as a substrate, wherein an oxygen burying layer is arranged in the SOI sheet;
manufacturing a nano electrode on the top silicon film;
depositing a silicon nitride protective layer on the top silicon film, wrapping the nano electrode by the silicon nitride protective layer, etching a contact hole on the silicon nitride protective layer, wherein the contact hole is used for connecting the nano electrode to an external circuit, and then manufacturing a protective barrier layer on the surface of the silicon nitride protective layer;
preparing an oxide layer at the bottom of the SOI wafer to be used as a mask for defining a bottom thinning area, and etching the oxide layer in the thinning area;
thinning the bottom layer silicon of the SOI sheet by using the oxide layer as a mask and adopting a water bath method to form the thinning area;
removing the buried oxide layer of the thinning area by adopting a reactive ion etching method;
depositing a metal bottom electrode at the periphery of the thinning area;
the step of manufacturing the nano electrode on the top silicon film specifically comprises the following steps:
manufacturing a nano electrode on the top silicon film, wherein the width of the nano electrode is 100-200 nanometers, the height of the nano electrode is 20-50 nanometers, the nano electrode is deposited on the top silicon film in an electron beam evaporation deposition mode, the shape of the nano electrode is any one of a grid bar shape, a grid shape and a fractal structure, and the shape of the nano electrode is formed in a nano imprinting or electron beam exposure mode;
the step of preparing a layer of oxide layer at the bottom of the SOI wafer specifically comprises the following steps:
preparing an oxide layer at the bottom of the SOI wafer by a wet-heat oxidation method, wherein the thickness of the oxide layer is 300 nanometers.
2. A method for fabricating a near-infrared thermionic photodetector as claimed in claim 1, wherein the nanoelectrodes are made of noble metal materials.
3. The method of claim 2, wherein the nanoelectrode is made of gold or silver.
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