WO2019033502A1 - 气体扩散装置及成膜设备 - Google Patents

气体扩散装置及成膜设备 Download PDF

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Publication number
WO2019033502A1
WO2019033502A1 PCT/CN2017/102574 CN2017102574W WO2019033502A1 WO 2019033502 A1 WO2019033502 A1 WO 2019033502A1 CN 2017102574 W CN2017102574 W CN 2017102574W WO 2019033502 A1 WO2019033502 A1 WO 2019033502A1
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WIPO (PCT)
Prior art keywords
diffusion
cover plate
height
diffusion portion
gap
Prior art date
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Ceased
Application number
PCT/CN2017/102574
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English (en)
French (fr)
Inventor
王杲祯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/577,666 priority Critical patent/US10619240B2/en
Publication of WO2019033502A1 publication Critical patent/WO2019033502A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to the field of coating technology, and in particular to a gas diffusion device and a film forming apparatus.
  • OLED organic electroluminescent diode
  • an OLED display device requires a thin film package (TFE).
  • the TFE utilizes a film forming apparatus to pass a gas such as N2, N2O, SiH4, NH3, HMDSO, TMA, etc. into the chamber for reaction.
  • the quality of the TFE film layer directly affects the water gas intrusion rate.
  • the parameters for evaluating the film quality include film uniformity, thickness, surface flatness, and compactness. Whether the gas can be uniformly diffused has a direct influence on the film surface quality such as surface flatness, compactness, uniformity and the like.
  • the existing gas diffusion device has a complicated structure and an unsatisfactory diffusion effect, so that the coating quality is not ideal.
  • the technical problem to be solved by the present invention is to provide a gas diffusion device and a film forming apparatus, which can solve the problems of complicated structure and uneven diffusion of the gas diffusion device in the prior art.
  • an embodiment of the present invention provides a gas diffusion device including a cover plate, a first diffusion portion, and a second diffusion portion.
  • the first diffusing portion cooperates with the cover plate to form a first diffusion space and an air inlet communicating with the first diffusion space.
  • the second diffusion portion cooperates with the cover plate to form a second diffusion space and an air outlet communicating with the second diffusion space, and the second diffusion space is in communication with the first diffusion space such that The gas entering the intake port is output from the air outlet after being transmitted through the first diffusion space and the second diffusion space.
  • the gap between the first diffusion portion and the cover plate gradually becomes smaller in a direction from the air inlet to the air outlet, and the second diffusion portion and the cover plate The gap height between the first and the first gradually becomes larger, and then gradually becomes smaller.
  • Embodiments of the present invention also provide a film forming apparatus including the above gas diffusion device.
  • the invention has the beneficial effects that: by two diffusions, the gap height between the first diffusion portion and the cover plate gradually becomes smaller in the direction from the air inlet to the air outlet, and the second The height of the gap between the diffusing portion and the cover plate is gradually increased first, and then gradually becomes smaller. The height of the gap between the first diffusion portion and the cover plate is gradually reduced, which is favorable for the gas to flow upward in the first diffusion space for the first time. Fully diffused, and uniformly fused in the second diffusion space and then fully diffused to output a uniform gas, which can improve the efficiency of uniform gas diffusion and improve the gas utilization rate.
  • Figure 1 is a side elevational view showing the gas diffusion embodiment of the present invention
  • Figure 2 is a schematic view showing the central portion of the gas diffusion embodiment of the present invention and the height change of the gap between the two sides and the cover;
  • Figure 3 is a schematic left side view of the gas diffusion embodiment of the present invention.
  • FIG. 4 is a top plan view showing a first diffusion portion and a second diffusion portion of the gas diffusion embodiment of the present invention
  • Figure 5 is a schematic view showing the structure of an embodiment of the film forming apparatus of the present invention.
  • the gas diffusion device embodiment of the present invention includes a cover plate 11, a first diffusion portion 12, and a second diffusion portion 13.
  • the first diffusing portion 12 cooperates with the cover plate 11 to form a first diffusion space 121 and an air inlet 122 that communicates with the first diffusion space 121.
  • the second diffusion portion 13 cooperates with the cover plate 11 to form a second diffusion space 131 and an air outlet 132 communicating with the second diffusion space 131.
  • the second diffusion space 131 communicates with the first diffusion space 121 so as to enter from the air inlet 122.
  • the gas is transmitted from the first diffusion space 121 and the second diffusion space 131 and then outputted from the gas outlet 132.
  • the gap height D between the first diffusion portion 12 and the cover 11 gradually becomes smaller, and the gap height H between the second diffusion portion 13 and the cover 11 is increased. Gradually become larger, then gradually become smaller.
  • the gas diffusion device in the gas diffusion device embodiment of the present invention is generally applied to a gas deposition device such as a gas diffusion in a thin film package of a display device, for example, in a film forming apparatus including a gas diffusion device.
  • the diffusion, reaction, and output are performed to coat the display device.
  • the uniformity of gas diffusion affects the surface flatness, compactness and uniformity of the coating layer.
  • the gap height D between the first diffusion portion 12 and the cover plate 11 gradually becomes smaller, the gas entering the air inlet 122 gradually becomes slower along the first diffusion space 121 toward the second diffusion space 131.
  • the gradual elevation of the height facilitates the first full diffusion of the gas, and the gas enters the second diffusion space 131 from the first diffusion space 121, and the gap height H of the second diffusion space 131 gradually becomes smaller and becomes smaller.
  • the gas gradually increases with the height H of the gap, it is advantageous for the gas to be uniformly fused evenly after the first diffusion, so that the gas can be made uniform, and then the gas becomes smaller with the gap height H, and the uniformly mixed gas is further carried out.
  • the gas is uniformly diffused and discharged, so that the efficiency of uniform gas diffusion can be improved, and the gas utilization rate can be improved, thereby improving the effectiveness of film encapsulation for a display device.
  • the gap height D between the first diffusing portion 12 and the cover plate 11 gradually becomes smaller, which may be gradually reduced gradually, for example, gradually becoming smoother.
  • Small may also mean, for example, that it gradually becomes smaller overall, and does not exclude the presence of micro-convex or dimples or facets.
  • the height H of the gap between the second diffusing portion 13 and the cover plate 11 is gradually increased first, and then gradually becomes smaller, which may be gradually smoothed down gradually and then gradually becomes larger, or may be gradually changed first. Large, then gradually smaller, does not rule out the existence of micro-convex or dimples or facets.
  • the gap height D between the first diffusing portion 12 and the cover plate 11 is gradually reduced in a straight line manner, that is, a slope is formed from the air inlet 122 to the end of the first diffusing portion 12 . And at an angle with the cover plate 11. In this way, the gas in the first diffusion space 121 can be uniformly raised and diffused.
  • the gap height D between the first diffusing portion 12 and the cover plate 11 may gradually become smaller in the direction of the air inlet 122 to the air outlet 132, and the arc opening is opened at this time.
  • the combination may be gradually reduced toward the cover 11 or away from the cover 11, or the combination of the curved surface and the plane, or the combination of the plurality of curved surfaces may become smaller. Further, it may be gradually reduced in a stepped manner such as a minute step.
  • the change in the gap height between the first diffusing portion 12 and the cover 11 is 5 -15mm, optional 6-12mm, optional 7-10mm.
  • the gap height between the position of the first diffusion portion 12 adjacent to the air inlet 122 and the cover 11 is 15 mm, and the end of the first diffusion portion 12, that is, the position communicating with the second diffusion space 131 and the gap between the cover 11 and the cover 11 The height is 5mm.
  • the gap height H between the second diffusing portion 13 and the cover plate 11 is gradually increased in a curved manner, and then gradually becomes smaller.
  • the height H of the gap between the second diffusing portion 13 and the cover 11 is curved (ie, viewed from a side view angle or a cross section) and the gap height H between the cover plates 11 is gradually increased, and then gradually changes. small.
  • the change in the gap height H between the second diffusion portion 13 and the cover 11 is 5-10 mm. It can be 6-9mm, and can be selected as 7-8mm.
  • the position where the second diffusion portion 13 is connected to the first diffusion space 121 and the gap height H of the cover 11 are 5 mm, and the second diffusion portion 13 is away from the cover.
  • the gap height H between the position of 11 and the cover 11 is 10 mm.
  • the maximum gap height H between the second diffusion portion 13 and the cover plate 11 is smaller than the maximum gap height D between the first diffusion portion 12 and the cover plate 11 .
  • the gas can be more rapidly fused in the second diffusion space 131 as the gap height H gradually increases.
  • the maximum gap height H between the second diffusion portion 13 and the cover plate 11 may also be equal to the maximum gap height D between the first diffusion portion 12 and the cover plate 11.
  • the difference between the maximum gap height D between the first diffusing portion 12 and the cover 11 and the maximum gap height H between the second diffusing portion 13 and the cover 11 is, for example, 2-5 mm, so that It ensures the speed of fusion and ensures the uniformity and effectiveness of the fusion.
  • a change in the gap height H between the second diffusion portion 13 and the cover 11 during the gap height H between the second diffusion portion 13 and the cover 11 is gradually reduced.
  • the rate gradually decreases from the central region 1331 of the air outlet 132 to the both sides 1332.
  • the rate of change may refer to the speed at which the height changes. That is, during the process in which the gap height H between the second diffusion portion 13 and the cover 11 is gradually reduced, the gap height H between the second diffusion portion 13 and the cover 11 is changed in the central portion 1331 of the air outlet 132. Fast, and the height of the area of the central portion 1331 of the air outlet 132 to the sides 1332 is slower and the height change value is gradually smaller.
  • the gap height H between the second diffusion portion 13 and the cover 11 is gradually increased.
  • the gap height H between the second diffusing portion 13 and the cover plate 11 is relatively large in the central region 1331 of the air outlet 132, and is in the region of the central portion 1331 of the air outlet 132 to the sides 1332.
  • the height change value gradually becomes smaller, and it can be considered that the inclination of the center region 1331 is large in the process in which the gap height H between the second diffusion portion 13 and the cover 11 gradually becomes smaller, and the sides 1332 from the center region 1331 are larger.
  • the degree of inclination gradually becomes smaller, so that the air outlet 132 is more smoothly vented, conforms to the design of fluid mechanics, and can guide the gas to uniformly diffuse and vent.
  • the second diffusing portion 13 has a convex portion 133 at a position of the central portion 1331 of the air outlet 132.
  • the convex portion 133 is disposed in an arc shape, and both sides of the convex portion 133 and the two sides of the second diffusing portion 13 are provided. not in contact.
  • the convex portion 133 extends into the second diffusion space 131, and during the process from the intake air to the air outlet, in the process in which the gap height H between the second diffusion portion 13 and the cover plate 11 gradually becomes smaller, the second diffusion portion
  • the gap height H between the cover plate 13 and the cover plate 11 is larger than the change value in the non-protrusion portion, and the rate of change from the top of the convex portion toward the convex portion is gradually reduced, that is, the central region 1331
  • the rate of change in the gap height between the cover plate 11 and the cover plate 11 is large, and the both sides 1332 toward the center portion 1331 are gradually reduced.
  • the gap height H between the second diffusion portion 13 and the cover plate 11 at the position of the air outlet 132 gradually increases from the central portion 1331 of the air outlet 132 to the both sides 1332.
  • the height of the gap between the top of the convex portion 133 and the cover plate 11 which are disposed in an arc shape is the smallest, and the height of the gap between the non-top position of the convex portion 133 and the cover plate 11 gradually increases from the top position to the both sides, thus It is possible to make the uniformity of the outgassing, the uniform central region 1331 and the outgas of the two sides 1332 thereof.
  • the gap height H between the second diffusion portion 13 and the cover plate 11 gradually increases from the central portion 1331 of the air outlet 132 to the both sides 1332 at the position of the air outlet 132, such as a triangular convex portion.
  • a straight line extending from one side of the central region to the second diffusing space 131 of the second diffusing portion 13 is straight.
  • the central area is an arc and the sides are in the form of a straight line.
  • the air inlet 122 is disposed in a dot shape and communicates with the bottom corner of the first diffusion space 121 away from the cover 11 , and the air outlet 132 is disposed in a strip shape and is adjacent to the second diffusion space 131 near the top corner of the cover 11 Connected.
  • the air inlet 122 is arranged in a dot shape, which means that the diameter of the air inlet 122 is small, and it can be considered to be arranged in a dot shape with respect to the first diffusion space 121.
  • the air inlet 122 communicates with the bottom corner of the first diffusion space 121, and the gap height between the first diffusion portion 12 and the cover 11 gradually becomes smaller, that is, the position where the first diffusion portion 12 and the second diffusion portion 13 are connected. Adjacent to the cover plate 11, the gas can be more uniformly diffused for the first time to facilitate fusion and re-diffusion in the second diffusion portion 13.
  • the air outlets 132 are arranged in a strip shape, and the strip-shaped extending direction coincides with the width direction of the end of the second diffusing portion 13, so that the gas diffused in the second diffusion space 131 can be uniformly diffused. Output.
  • the projection of the first diffusion space 121 on the cover 11 is radially expanded with respect to the air inlet 122
  • the projection of the second diffusion space 131 on the cover 11 is opposite to the first diffusion space 121 .
  • the radiation spread is performed, wherein the deployment angle of the first diffusion space 121 is greater than the deployment angle of the second diffusion space 131.
  • the first diffusion space 121 is radially expanded and the gap between the first diffusion portion 12 and the cover 11 gradually becomes smaller in the direction from the air inlet 122 to the air outlet 132, so that the width direction of the vertical or substantially vertical air outlet is small.
  • the radially expanding design which gradually becomes smaller in the height direction, facilitates the full diffusion of the gas, and facilitates the fusion and further diffusion of the gas in the second diffusion space 131. Further, the projection of the second diffusion space 131 with respect to the first diffusion space 121 on the cover 11 is further radially expanded, and further diffusion of the gas can be ensured.
  • the projection of the first diffusion space 121 on the cover 11 is radially expanded relative to the air inlet 122, for example, the radial expansion of the two sides is curved, or the side is the other side of the curve. In the case of a straight line, the projection of the second diffusion space 131 on the cover 11 is radially expanded relative to the first diffusion space 121.
  • the radial shape is not limited to the schematic shape of FIG. 4 as long as it is substantially radial.
  • the length of the first diffusing portion 12 from the intake air to the air outlet is greater than the length of the second diffusing portion 13 from the intake air to the air outlet direction, so that the gas is spread twice, in the first The diffusion range of one diffusion space 121 is large, and the diffusion range to the second diffusion space 131 is small to facilitate uniform gas discharge.
  • the length of the first diffusing portion 12 from the intake air to the air outlet may also be equal to the length of the second diffusing portion 13 from the intake air to the air outlet direction.
  • a film forming apparatus 2 in an embodiment of the film forming apparatus of the present invention comprises the gas diffusing apparatus 1 set forth in the above embodiment of the gas diffusing apparatus of the present invention.
  • the gas diffusion device 1 will not be described again herein, and the specific description of the implementation of the gas diffusion device of the present invention will be described.
  • the gap height D between the first diffusing portion 12 and the cover plate 11 gradually becomes smaller in the direction from the air inlet 122 to the air outlet 132 by two diffusions, and the second
  • the gap height H between the diffusing portion 13 and the cover plate 11 is gradually increased first, and then gradually becomes smaller, which facilitates the first full diffusion of the gas in the first diffusion space, and is uniformly fused in the second diffusion space.
  • the diffusion is sufficiently diffused to output a uniform gas, so that a film having a smooth surface and a good compactness is formed when the display device is coated.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Chemical Vapour Deposition (AREA)
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Abstract

一种气体扩散装置，该装置包括盖板（11）、第一扩散部（12）、第二扩散部（13）。第一扩散部（12）与盖板（11）配合形成第一扩散空间（121）以及与第一扩散空间（121）连通的进气口（122）。第二扩散部（13）与盖板（11）配合形成第二扩散空间（131）以及与第二扩散空间（131）连通的出气口（132），第二扩散空间（131）与第一扩散空间（121）连通，以使得从进气口（122）进入的气体经第一扩散空间（121）和第二扩散空间（131）传输后从出气口（132）输出。其中在从进气口（122）到出气口（132）的方向上，第一扩散部（12）与盖板（11）之间的间隙高度逐渐变小，而第二扩散部（13）与盖板（11）之间的间隙高度先逐渐变大，后逐渐变小。该装置能够提高气体均匀扩散的效率，提升气体的利用率。还公开了一种包括该气体扩散装置的成膜设备。

Description

气体扩散装置及成膜设备
【技术领域】
本发明涉及镀膜技术领域，特别是涉及一种气体扩散装置及成膜设备。
【背景技术】
有机电致发光二极管（OLED）是一种有机薄膜电致发光器件，其具有成本低，视角宽，对比度高，可实现柔性等优点，得到极大的关注。
OLED显示器件为实现其柔性显示的功能，需要进行薄膜封装（TFE）。TFE利用成膜设备，将气体例如N2，N2O，SiH4，NH3，HMDSO，TMA等通入腔室进行反应。TFE膜层的质量直接影响水气的侵入率，评价膜层质量的参数包括膜的均一性，厚度，表面平整度，致密性等。气体能否均匀的扩散，对膜层的表面平整度，致密性，均一性等成膜质量有直接的影响。目前，现有的气体扩散装置结构比较复杂而且扩散效果不理想，因此容易造成镀膜质量不理想。
【发明内容】
本发明主要解决的技术问题是提供一种气体扩散装置及成膜设备，能够解决现有技术中气体扩散装置结构复杂且扩散不均匀等问题。
为解决上述技术问题，本发明实施例提供一种气体扩散装置包括盖板、第一扩散部、第二扩散部。所述第一扩散部与所述盖板配合形成第一扩散空间以及与所述第一扩散空间连通的进气口。所述第二扩散部与所述盖板配合形成第二扩散空间以及与所述第二扩散空间连通的出气口，所述第二扩散空间与所述第一扩散空间连通，以使得从所述进气口进入的气体经所述第一扩散空间和所述第二扩散空间传输后从所述出气口输出。其中在从所述进气口到所述出气口的方向上，所述第一扩散部与所述盖板之间的间隙高度逐渐变小，而所述第二扩散部与所述盖板之间的间隙高度先逐渐变大，后逐渐变小。
本发明实施例还提供一种成膜设备，包括上述气体扩散装置。
与现有技术相比，本发明的有益效果是：通过两次扩散，在从进气口到出气口的方向上，第一扩散部与盖板之间的间隙高度逐渐变小，而第二扩散部与盖板之间的间隙高度先逐渐变大，后逐渐变小,第一扩散部与盖板之间的间隙高度逐渐变小有利于气体在第一扩散空间上升流动且进行第一次较充分扩散，而在第二扩散空间内均匀融合后再充分扩散从而输出均匀气体，能够提高气体均匀扩散的效率，提升气体的利用率。
【附图说明】
图1是本发明气体扩散实施例的侧视结构示意图；
图2是本发明气体扩散实施例中的中心区域以及两侧与盖板之间间隙高度变化示意图；
图3是本发明气体扩散实施例的左视结构示意图；
图4是本发明气体扩散实施例的第一扩散部与第二扩散部俯视结构示意图；
图5是本发明成膜设备实施例的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参阅图1，本发明气体扩散装置实施例包括盖板11、第一扩散部12以及第二扩散部13。其中第一扩散部12与盖板11配合形成第一扩散空间121以及与第一扩散空间121连通的进气口122。第二扩散部13与盖板11配合形成第二扩散空间131以及与第二扩散空间131连通的出气口132，第二扩散空间131与第一扩散空间121连通，以使得从进气口122进入的气体经第一扩散空间121和第二扩散空间131传输后从出气口132输出。
其中在从进气口122到出气口132的方向上，第一扩散部12与盖板11之间的间隙高度D逐渐变小，而第二扩散部13与盖板11之间的间隙高度H先逐渐变大，后逐渐变小。
本发明气体扩散装置实施例中的气体扩散装置一般应用于对显示器件，例如是OLED显示器件进行薄膜封装时的气体扩散等相关工序中，将气体材料放入包括气体扩散装置的成膜设备中，进行扩散、反应再输出对显示器件进行镀膜。气体扩散的均匀度，影响镀膜层的表面平整度，致密性、均一性等特征。
在本实施例中，由于第一扩散部12与盖板11之间的间隙高度D逐渐变小，因此气体进入进气口122沿着第一扩散空间121往第二扩散空间131的方向逐渐缓慢上升扩散，高度的逐渐抬升利于气体进行第一次较充分地扩散，气体从第一扩散空间121进入第二扩散空间131，由于第二扩散空间131的间隙高度H逐渐变大后逐渐变小，气体随着间隙高度H的逐渐变大有利于气体在第一次扩散后较为快速地均匀融合，使气体能够变得均匀，接着气体随着间隙高度H逐渐变小，进一步将混合均匀的气体进行均匀扩散后出气，如此能够提高气体均匀扩散的效率，提升气体的利用率，从而能够提高为显示器件进行薄膜封装的有效性。
在本实施例中，在从进气口122到出气口132的方向上，第一扩散部12与盖板11之间的间隙高度D逐渐变小可以指一直地逐渐变小例如光滑地逐渐变小（例如包括平滑、圆滑、弧面滑等），也可以指例如总体上逐渐变小，不排除其间有微凸或者微凹或者小平面的情形存在。同理，第二扩散部13与盖板11之间的间隙高度H先逐渐变大，后逐渐变小，可以指先光滑地逐渐变小后光滑地逐渐变大，也可以指大体上先逐渐变大，后逐渐变小，不排除其间有微凸或者微凹或者小平面的情形存在。
继续参阅图1，可选的是，第一扩散部12与盖板11之间的间隙高度D以直线方式逐渐变小，也即从进气口122到第一扩散部12的末端呈一斜面，且与盖板11呈一夹角。如此可以使得第一扩散空间121内气体能够均匀上升且扩散。当然在其他实施例中，第一扩散部12与盖板11之间的间隙高度D在进气口122到出气口132的方向上也可以弧形的方式逐渐变小，此时弧形的开口可以朝向盖板11或者背离盖板11，或者是弧面与平面的方式组合逐渐变小，或者多种弧面的组合逐渐变小。此外还可以以阶梯状例如微小阶梯状的方式逐渐变小。
参阅图1，可选的是，在第一扩散部12与盖板11之间的间隙高度D逐渐变小过程中，第一扩散部12与盖板11之间的间隙高度的变化值为5-15mm，可选为6-12mm，可选为7-10mm。例如第一扩散部12邻近进气口122的位置与盖板11之间的间隙高度为15mm，则第一扩散部12末端即与第二扩散空间131连通的位置与盖板11之间的间隙高度为5mm。
继续参阅图1，可选的是，第二扩散部13与盖板11之间的间隙高度H以曲线方式先逐渐变大，后逐渐变小。具体地，第二扩散部13与盖板11相对的一面呈弧面的方式（即从侧视角度或者截面看为曲线）与盖板11之间的间隙高度H先逐渐变大，后逐渐变小。以曲线的方式先逐渐变大，后逐渐变小，如此能够让气体在第二扩散空间131较顺畅融合后均匀扩散，曲线性的设计能够避免气体在流通过程中受到阻碍而无法进行均匀扩散。
可选的是，第二扩散部13与盖板11之间的间隙高度H逐渐变大的过程中，第二扩散部13与盖板11之间的间隙高度H的变化值为5-10mm，可选为6-9mm，可选为7-8mm，例如第二扩散部13与第一扩散空间121接通的位置与盖板11的间隙高度H为5mm，则第二扩散部13远离盖板11的位置与盖板11的间隙高度H为10mm。
参阅图1，可选的是，第二扩散部13与盖板11之间的最大间隙高度H小于第一扩散部12与盖板11之间的最大间隙高度D。如此，气体在第二扩散空间131内随着间隙高度H逐渐变大的过程中可以较快速进行融合。当然在其他实施例中，第二扩散部13与盖板11之间的最大间隙高度H也可以等于第一扩散部12与盖板11之间的最大间隙高度D。可选的是，第一扩散部12与盖板11之间的最大间隙高度D与第二扩散部13与盖板11之间的最大间隙高度H的差值范围例如为2-5mm，如此既能保证融合的速度又能保证融合的均匀性和有效性。
参阅图1-3，可选的是，在第二扩散部13与盖板11之间的间隙高度H逐渐变小过程中，第二扩散部13与盖板11之间的间隙高度H的变化率从出气口132的中心区域1331向两侧1332逐渐变小。在本实施例中，变化率可以指高度变化的快慢。也即在第二扩散部13与盖板11之间的间隙高度H逐渐变小过程中，第二扩散部13与盖板11之间的间隙高度H在出气口132的中心区域1331的变化较快，且在出气口132的中心区域1331往两侧1332区域的高度变化较慢且高度变化值逐渐变小，换种说法，在第二扩散部13与盖板11之间的间隙高度H逐渐变小过程中，第二扩散部13与盖板11之间的间隙高度H在出气口132的中心区域1331的变化值相对较大，且在出气口132的中心区域1331往两侧1332区域的高度变化值逐渐变小，可以认为在第二扩散部13与盖板11之间的间隙高度H逐渐变小的过程中，中心区域1331的倾斜程度较大，而从中心区域1331的两侧1332倾斜程度逐渐变小，如此，使得出气口132出气更顺畅，符合流体力学的设计，能够引导气体均匀扩散并出气。
参阅图3，例如在第二扩散部13在出气口132的中心区域1331位置上具有一凸部133，例如凸部133呈弧形设置，且凸部133两侧与第二扩散部13两侧不接触。例如凸部133延伸进第二扩散空间131，从进气到出气的过程中，在该第二扩散部13与盖板11之间的间隙高度H逐渐变小的过程中，则第二扩散部13与盖板11之间的间隙高度H在凸部133的变化值比在非凸部区域的变化值要大，且从凸部顶部往凸部两侧变化率逐渐变小，即中心区域1331在第二扩散部13与盖板11之间的距离逐渐变小的过程中与盖板11之间间隙高度的变化率较大，往中心区域1331的两侧1332逐渐变小。
参阅图3，可选的是，在出气口132的位置处第二扩散部13与盖板11之间的间隙高度H从出气口132的中心区域1331向两侧1332逐渐增大。例如呈弧形设置的凸部133的顶部与盖板11之间的间隙高度最小，而凸部133的非顶部位置与盖板11之间的间隙高度从顶部位置向两侧逐渐增大，如此可以使得扩散出气的均匀度，均匀中心区域1331以及其两侧1332的出气。当然在出气口132的位置处第二扩散部13与盖板11之间的间隙高度H从出气口132的中心区域1331向两侧1332逐渐增大的方式有多种，例如三角形的凸部，或者从中心区域的一侧为圆弧一侧为直线均延伸至与第二扩散部13的第二扩散空间131内。又例如，中心区域为圆弧，而两侧呈直线的形式。
可选的是，进气口122呈点状设置且与第一扩散空间121远离盖板11的底部角落连通，出气口132呈条状设置且与第二扩散空间131靠近盖板11的顶部角落连通。在本实施例中，进气口122呈点状设置，是指进气口122的直径较小，相对于第一扩散空间121可以认为是呈点状设置。进气口122与第一扩散空间121的底部角落连通，而第一扩散部12与盖板11之间的间隙高度逐渐变小，即第一扩散部12与第二扩散部13接通的位置邻近盖板11，如此可以使气体第一次较均匀地扩散后便于在第二扩散部13进行融合再扩散。在本实施例中，出气口132呈条状设置，条状的延伸方向与第二扩散部13的末端的宽度方向一致，如此使得在第二扩散空间131内融合后再扩散的气体能够均匀地输出。
参阅图4，可选的是，第一扩散空间121在盖板11上的投影相对于进气口122呈放射状展开，第二扩散空间131在盖板11上的投影相对于第一扩散空间121呈放射状展开，其中第一扩散空间121的展开角度大于第二扩散空间131的展开角度。第一扩散空间121呈放射状展开且从进气口122到出气口132的方向上，第一扩散部12与盖板11之间的间隙高度逐渐变小，如此在垂直或者大致垂直出气的宽度方向上放射状展开，在高度方向上逐渐变小的设计，即有利于气体的充分扩散，又利于气体在第二扩散空间131的融合与进一步扩散。此外，第二扩散空间131相对于第一扩散空间121在盖板11的投影进一步呈放射状展开，能够保证气体的进一步扩散。当然，在其他实施例中，第一扩散空间121在盖板11上的投影相对于进气口122呈类放射状展开，例如类放射状展开后两侧边缘为曲线，或者一侧为曲线另一侧为直线，同理第二扩散空间131在盖板11上的投影相对于第一扩散空间121呈类放射状展开。呈放射状并不限定为图4的示意的形状，只要大体上呈放射状即可。
参阅图4，可选的是，第一扩散部12从进气到出气的方向上的长度大于第二扩散部13从进气到出气方向上的长度，使气体进行两次扩撒，在第一扩散空间121的扩散范围较大，而到第二扩散空间131扩散范围较小利于均匀出气。当然，在其他实施例中，第一扩散部12从进气到出气的方向上的长度也可以等于第二扩散部13从进气到出气方向上的长度。
参阅图5，本发明成膜设备实施例中的成膜设备2，包括上述本发明气体扩散装置实施例中所阐述的气体扩散装置1。在此不再对气体扩散装置1进行赘述，具体参见上述本发明气体扩散装置实施的阐述。
综上所述，本发明实施例通过两次扩散，在从进气口122到出气口132的方向上，第一扩散部12与盖板11之间的间隙高度D逐渐变小，而第二扩散部13与盖板11之间的间隙高度H先逐渐变大，后逐渐变小，有利于气体在第一扩散空间进行第一次较充分扩散，而在第二扩散空间内均匀融合后再充分扩散从而输出均匀气体，使得在对显示器件进行镀膜时形成表面平整、致密性好的膜层。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种气体扩散装置，包括：
    盖板；
    第一扩散部，所述第一扩散部与所述盖板配合形成第一扩散空间以及与所述第一扩散空间连通的进气口；
    第二扩散部，所述第二扩散部与所述盖板配合形成第二扩散空间以及与所述第二扩散空间连通的出气口，所述第二扩散空间与所述第一扩散空间连通，以使得从所述进气口进入的气体经所述第一扩散空间和所述第二扩散空间传输后从所述出气口输出；
    其中在从所述进气口到所述出气口的方向上，所述第一扩散部与所述盖板之间的间隙高度逐渐变小，而所述第二扩散部与所述盖板之间的间隙高度先逐渐变大，后逐渐变小。
  2. 根据权利要求1所述的装置，其中，所述第一扩散部与所述盖板之间的间隙高度以直线方式逐渐变小。
  3. 根据权利要求1所述的装置，其中，在所述第一扩散部与所述盖板之间的间隙高度逐渐变小过程中，所述第一扩散部与所述盖板之间的间隙高度的变化值为5-15mm。
  4. 根据权利要求2所述的装置，其中，在所述第一扩散部与所述盖板之间的间隙高度逐渐变小过程中，所述第一扩散部与所述盖板之间的间隙高度的变化值为5-15mm。
  5. 根据权利要求1所述的装置，其中，所述第二扩散部与所述盖板之间的间隙高度以曲线方式先逐渐变大，后逐渐变小。
  6. 根据权利要求1所述的装置，其中，所述第二扩散部与所述盖板之间的间隙高度逐渐变大的过程中，所述第二扩散部与所述盖板之间的间隙高度的变化值为5-10mm。
  7. 根据权利要求5所述的装置，其中，所述第二扩散部与所述盖板之间的间隙高度逐渐变大的过程中，所述第二扩散部与所述盖板之间的间隙高度的变化值为5-10mm。
  8. 根据权利要求1所述的装置，其中，所述第二扩散部与所述盖板之间的最大间隙高度小于所述第一扩散部与所述盖板之间的最大间隙高度。
  9. 根据权利要求2所述的装置，其中，所述第二扩散部与所述盖板之间的最大间隙高度小于所述第一扩散部与所述盖板之间的最大间隙高度。
  10. 根据权利要求5所述的装置，其中，所述第二扩散部与所述盖板之间的最大间隙高度小于所述第一扩散部与所述盖板之间的最大间隙高度。
  11. 根据权利要求1所述的装置，其中，在所述第二扩散部与所述盖板之间的间隙高度逐渐变小过程中，所述第二扩散部与所述盖板之间的间隙高度的变化率从所述出气口的中心区域向两侧逐渐变小。
  12. 根据权利要求11所述的装置，其中，在所述出气口的位置处所述第二扩散部与所述盖板之间的间隙高度从所述出气口的中心区域向两侧逐渐增大。
  13. 根据权利要求1所述的装置，其中，所述进气口呈点状设置且与所述第一扩散空间远离所述盖板的底部角落连通，所述出气口呈条状设置且与所述第二扩散空间靠近所述盖板的顶部角落连通。
  14. 根据权利要求1所述的装置，其中，所述第一扩散空间在所述盖板上的投影相对于所述进气口呈放射状展开，所述第二扩散空间在所述盖板上的投影相对于所述第一扩散空间呈放射状展开，其中所述第一扩散空间的展开角度大于所述第二扩散空间的展开角度。
  15. 一种成膜设备，包括如权利要求1所述的气体扩散装置。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
USD1107669S1 (en) * 2022-05-02 2025-12-30 Lam Research Corporation Processing chamber purge plate
CN116637785A (zh) * 2023-06-01 2023-08-25 海目星激光科技集团股份有限公司 膜片烘干装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102011096A (zh) * 2010-12-29 2011-04-13 上海大学 可控制蒸发气流分布和成分的真空蒸发系统
CN103160788A (zh) * 2011-12-16 2013-06-19 上海大学 真空蒸发系统
CN104711514A (zh) * 2015-04-07 2015-06-17 合肥京东方光电科技有限公司 一种成膜装置及方法
US20170096738A1 (en) * 2015-10-02 2017-04-06 Applied Materials, Inc. Diffuser temperature control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805973A (en) 1991-03-25 1998-09-08 General Electric Company Coated articles and method for the prevention of fuel thermal degradation deposits
JP3131005B2 (ja) * 1992-03-06 2001-01-31 パイオニア株式会社 化合物半導体気相成長装置
EP0645472A1 (en) * 1993-09-23 1995-03-29 General Electric Company Coated article for hot hydrocarbon fluid and method of preventing fuel thermal degradation deposits
US6428847B1 (en) 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
US6663025B1 (en) 2001-03-29 2003-12-16 Lam Research Corporation Diffuser and rapid cycle chamber
KR20040083417A (ko) * 2001-12-04 2004-10-01 프라이맥스 인코포레이티드 화학 증착법 및 화학 증착 리액터
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
KR101204614B1 (ko) 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
KR101562327B1 (ko) * 2008-07-08 2015-10-22 주성엔지니어링(주) 가스분배판 및 이를 포함하는 기판처리장치
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
KR101108879B1 (ko) * 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102011096A (zh) * 2010-12-29 2011-04-13 上海大学 可控制蒸发气流分布和成分的真空蒸发系统
CN103160788A (zh) * 2011-12-16 2013-06-19 上海大学 真空蒸发系统
CN104711514A (zh) * 2015-04-07 2015-06-17 合肥京东方光电科技有限公司 一种成膜装置及方法
US20170096738A1 (en) * 2015-10-02 2017-04-06 Applied Materials, Inc. Diffuser temperature control

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