WO2019033363A1

WO2019033363A1 - Photoelectric sensing apparatus and electronic device

Info

Publication number: WO2019033363A1
Application number: PCT/CN2017/097930
Authority: WO
Inventors: 李问杰
Original assignee: 深圳信炜科技有限公司
Priority date: 2017-08-17
Filing date: 2017-08-17
Publication date: 2019-02-21
Also published as: CN209803766U

Abstract

Provided are a photoelectric sensing apparatus and an electronic device. The photoelectric sensing apparatus (20) comprises a photosensitive bare chip (24), wherein the photosensitive bare chip comprises a plurality of photosensitive pixels (22), an anti-aliasing imaging element (28) is provided on the photosensitive bare chip, and the anti-aliasing imaging element (28) is used for preventing aliasing of an optical signal received between the adjacent photosensitive pixels (22) in the photosensitive bare chip (24). The electronic device comprises the photoelectric sensing apparatus (20).

Description

Photoelectric sensing device and electronic device

Technical field

The utility model relates to the field of photoelectric sensing, in particular to a photoelectric sensing device and an electronic device.

Background technique

At present, biometric information sensors, especially fingerprint recognition sensors, have gradually become the standard components of electronic products such as mobile terminals. Since the optical fingerprint recognition sensor has stronger penetration ability than the capacitive fingerprint recognition sensor, an optical fingerprint recognition module applied to the mobile terminal has been proposed. As shown in FIG. 1, the optical fingerprint recognition module includes an optical fingerprint sensor 400 and a light source 402. The optical fingerprint sensor 400 is disposed under the protective cover 401 of the mobile terminal. The light source 402 is disposed adjacent to one side of the optical fingerprint sensor 400. When the user's finger F contacts the protective cover 401, the light signal emitted by the light source 402 passes through the protective cover 401 and reaches the finger F, is reflected by the valleys and ridges of the finger F, and is received by the optical fingerprint sensor 400, and A fingerprint image of the finger F is formed.

However, the above optical fingerprint recognition module cannot obtain a clear image and needs to be improved.

Utility model content

The embodiments of the present invention aim to at least solve one of the technical problems existing in the prior art. To this end, the embodiments of the present invention need to provide a photoelectric sensing device and an electronic device.

An optoelectronic sensing device according to an embodiment of the present invention includes a photosensitive die, the photosensitive die includes a plurality of photosensitive pixels; the photosensitive die is provided with an anti-aliasing imaging element, and the anti-aliasing imaging component is used The optical signals received between adjacent photosensitive pixels in the photosensitive die are prevented from being aliased.

The embodiment of the present invention provides an anti-aliasing imaging element on the photosensitive dies, so that the optical signals received between adjacent photosensitive pixels are not aliased, so that the image obtained after performing the light sensing is clearer, thereby improving the image. Sensing accuracy.

In some embodiments, the anti-aliasing imaging element is disposed on a side away from the photosensitive die or a filter film is disposed between the photosensitive die and the anti-aliasing imaging element, the filter The membrane is used to filter light signals outside the preset band.

In some embodiments, the predetermined band is a band corresponding to a blue, green light signal.

Through the setting of the filter film, the interference signal in the ambient light can be effectively filtered, thereby improving the sensing accuracy.

In certain embodiments, the anti-aliasing imaging element includes a light absorbing wall and a plurality of light transmissive regions surrounded by a light absorbing wall.

In some embodiments, the light transmissive regions are evenly distributed. The evenly distributed light-transmissive region makes the preparation process of the anti-aliasing imaging element simpler.

In some embodiments, the light absorbing wall comprises a plurality of light absorbing blocks and height blocks arranged in an alternating stack. Since the thickness of each light absorbing block is smaller than the thickness of the light absorbing wall, the process of etching to form the light transmitting area is relatively easy, so that the process of anti-aliasing imaging element is easy, and the light transmission property of the light transmitting area is also ensured. . In addition, the light-absorbing wall is formed by laminating the height blocks and the light-absorbing blocks, which speeds up the process of the anti-aliasing imaging element and ensures the anti-aliasing effect of the anti-aliasing imaging element.

In certain embodiments, the height block is made of a transparent material.

In some embodiments, the light transmissive region is filled with a transparent material. Filling the transparent material in the light-transmitting region not only increases the strength of the anti-aliasing imaging element, but also prevents impurities from entering the light-transmitting region and affecting the light-transmitting effect.

In some embodiments, the anti-aliasing imaging element comprises a plurality of layers of light absorbing layers and transparent support layers arranged alternately; the light absorbing layer comprises a plurality of spaced apart light absorbing blocks; the transparent supporting layer is filled with a transparent material Forming, and filling the interval between the light absorbing blocks together; wherein the area corresponding to the interval forms a light transmitting area.

In certain embodiments, the thickness of each of the transparent support layers is unequal.

In certain embodiments, the thickness of the transparent support layer increases layer by layer.

By setting the thickness of the transparent supporting layer, the optical signal outside the preset angular range with respect to the vertical direction of the photosensitive die is prevented from passing through the anti-aliasing imaging element, thereby improving the anti-aliasing effect of the anti-aliasing imaging element.

In some embodiments, the anti-aliasing imaging element is formed directly on the photosensitive panel, or the anti-aliasing imaging element is separately fabricated and disposed on the photosensitive die.

In some embodiments, the photosensor device further includes a package for encapsulating the photosensitive die and the anti-aliasing imaging element and the filter film over the photosensitive die .

In some embodiments, the photosensitive die includes a substrate, and the photosensitive pixels are distributed in an array on the substrate.

In some embodiments, the photosensitive pixel includes at least one photosensitive device for receiving an optical signal and converting the received optical signal into a corresponding electrical signal.

In some embodiments, the photosensitive device comprises one or more of a photodiode, a photo resistor, a phototransistor.

In some embodiments, a scan line group electrically connected to the photosensitive pixel is disposed between adjacent photosensitive pixels And data line groups.

In some embodiments, the photoelectric sensing device further includes a driving circuit that drives the photosensitive pixels to perform light sensing, and the driving circuit is correspondingly connected to the scan line group for providing a corresponding driving signal. And transmitting to the photosensitive pixel through the scan line group.

In some embodiments, the drive circuit is formed on the substrate.

In some embodiments, the photoelectric sensing device further includes a signal processing circuit that acquires biometric information of the target object based on the electrical signal generated by the photosensitive pixel performing photo sensing.

In some embodiments, the photoelectric sensing device further includes a controller for controlling the driving circuit to output a corresponding driving signal, and controlling the signal processing circuit to receive an electrical signal output by the photosensitive pixel. .

In some embodiments, the signal processing circuit and the controller are both disposed on the substrate, or the signal processing circuit and the controller are electrically connected to the photosensitive die through a flexible circuit board.

In some embodiments, the optoelectronic sensing device is a fingerprint sensing device.

In some embodiments, the photosensor device is a sensor chip for sensing biometric information.

In some embodiments, the optoelectronic sensing device further includes a package for encapsulating the photosensitive die and the anti-aliasing imaging element over the photosensitive die.

An electronic device according to an embodiment of the present invention includes the photoelectric sensor device of any of the above embodiments.

Since the electronic device has the photoelectric sensing device of any of the above embodiments, it has all the advantageous effects of the photoelectric sensing device. In addition, the photoelectric sensing device can be disposed under the display screen of the electronic device, which not only realizes the biometric information of the target object from the front side of the electronic device, but also makes the screen ratio of the front surface of the electronic device large enough to facilitate the electronic The device develops in the direction of full screen display.

The additional aspects and advantages of the embodiments of the invention will be set forth in part in the description in the written description

DRAWINGS

The above and/or additional aspects and advantages of the embodiments of the invention will be apparent from the

1 is a schematic diagram of an optical image sensing structure applied to an electronic device in the prior art;

2 is a schematic front view showing an embodiment of an electronic device to which the photoelectric sensing device of the present invention is applied;

3 is a cross-sectional structural view of the electronic device of FIG. 2 taken along line I-I, in which only the part of the electronic device is shown Substructure

4 is a partial structural schematic view of a photoelectric sensing device according to an embodiment of the present invention;

5 is a schematic diagram of a range of optical signals that an anti-aliasing imaging element of an embodiment of the photoelectric sensing device shown in FIG. 4 can pass through;

6 is a partial structural schematic view of an anti-aliasing imaging element according to an embodiment of the present invention;

7 is a partial structural schematic view of an anti-aliasing imaging element according to another embodiment of the present invention;

Figure 8 is a schematic view showing the preparation process of the anti-aliasing imaging element shown in Figure 6;

9 is a partial structural schematic view of an anti-aliasing imaging element according to still another embodiment of the present invention;

10 is a partial structural schematic view of a photoelectric sensing device according to another embodiment of the present invention;

11 is a schematic structural view of a photoelectric sensor device according to still another embodiment of the present invention.

12 is a partial structural schematic view of a photosensitive die according to an embodiment of the present invention;

13 is a block diagram showing the structure of a photoelectric sensor device according to still another embodiment of the present invention;

14 is a schematic diagram showing the circuit structure of a photosensitive pixel according to an embodiment of the present invention;

FIG. 15 is a schematic diagram showing the circuit structure of a photosensitive pixel according to another embodiment of the present invention.

16 is a schematic structural view of a display screen according to an embodiment of the present invention;

17 is a schematic diagram showing the relative positional relationship between a display pixel and a photosensitive device in a photoelectric display device according to an embodiment of the present invention;

18 is a schematic front view showing another embodiment of an electronic device to which the photoelectric sensor device of the present invention is applied.

Detailed ways

The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are intended to be illustrative of the invention and are not to be construed as limiting.

In the description of the present invention, it is to be understood that the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. . Thus, features defining "first" or "second" may include one or more of the described features either explicitly or implicitly. In the description of the present invention, the meaning of "a plurality" is two or more unless specifically and specifically defined otherwise. "Contact" or "touch" includes direct or indirect contact. For example, the photoelectric sensing device disclosed hereinafter is disposed inside the electronic device, such as under the display screen, and the user's finger indirectly contacts the photoelectric sensing device through the protective cover and the display screen.

In the description of the present invention, it should be noted that the terms "installation", "connected", and "connected" are to be understood broadly, and may be, for example, a fixed connection or a Disassembling the connection, or connecting integrally; may be mechanical connection, electrical connection or communication with each other; may be directly connected, or may be indirectly connected through an intermediate medium, may be internal communication of two elements or mutual interaction of two elements Role relationship. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.

The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of the specific examples are described below. Of course, they are merely examples and are not intended to limit the invention. In addition, the present invention may repeat reference numerals and/or reference numerals in different examples, which are for the purpose of simplicity and clarity, and do not in themselves indicate the relationship between the various embodiments and/or settings discussed. Moreover, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the use of other processes and/or the use of other materials.

Further, the described features, structures may be combined in one or more embodiments in any suitable manner. In the following description, numerous specific details are set forth However, those skilled in the art will appreciate that the technical solution of the present invention may be practiced without one or more of the specific details or other structures, components, and the like. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring the invention.

Embodiments of the present invention provide a photoelectric sensing device disposed in an electronic device, such as, but not limited to, an OLED display panel or the like having a display device that emits an optical signal. When the electronic device is working, the display screen emits an optical signal to achieve the corresponding display effect. At this time, if the target object touches the electronic device, the optical signal emitted by the display screen reaches the target object and reflects, and the reflected optical signal is received by the photoelectric sensing device, and the photoelectric sensing device converts the received optical signal into a The electrical signal corresponding to the optical signal. Based on the electrical signals generated by the photoelectric sensing device, predetermined biometric information of the target object can be obtained.

The above electronic device is, for example, but not limited to, a suitable type of electronic product such as a consumer electronic product, a home electronic product, a vehicle-mounted electronic product, or a financial terminal product. Among them, consumer electronic products such as mobile phones, tablets, notebook computers, desktop monitors, computer integrated machines. Home-based electronic products such as smart door locks, TVs, refrigerators, wearable devices, etc. Vehicle-mounted electronic products such as car navigation systems, car DVDs, etc. Financial terminal products such as ATM machines, terminals for self-service business, etc. The following embodiments are described by taking a mobile terminal of the mobile phone as an example. However, as described above, the following embodiments are also applicable to other suitable electronic products, and are not limited to mobile terminals.

The predetermined biometric information (or image information) of the target object is, for example but not limited to, skin texture information such as fingerprints, palm prints, ear prints, and soles, and other suitable biometric information such as heart rate, blood oxygen concentration, veins, and arteries. interest. The predetermined biometric information may be any one or more of the aforementioned enumerated information. The target object may be, for example but not limited to, a human body, and may be other suitable types of organisms.

2 and FIG. 3, FIG. 2 shows a front structure of an embodiment of an electronic device to which the photoelectric sensor device of the present invention is applied, and FIG. 3 shows a cross-sectional structure of the electronic device of FIG. 2 along line II, and FIG. 3 shows only a partial structure of an electronic device. The photoelectric sensor device 20 of the embodiment of the present invention is applied to a mobile terminal 100. The front surface of the mobile terminal 100 is provided with a display screen 10, and a protective cover 30 is disposed above the display screen 10. Optionally, the screen of the display screen 10 is relatively high, for example, 80% or more. The screen ratio refers to the ratio of the display area S1 of the display screen 10 to the front area of the mobile terminal 100. The photoelectric sensing device 20 is disposed correspondingly below the display screen 10 and is disposed corresponding to a partial region of the display region S1 of the display screen 10. The area defining the front side of the mobile terminal 100 corresponding to or facing the photoelectric sensing device 20 is the sensing area S2. The photoelectric sensing device 20 is configured to sense predetermined biometric information contacting or approaching a target object above the sensing region S2. It can be understood that the photoelectric sensing device 20 can also be disposed under the protective cover 30 and located in the front non-display area of the mobile terminal 100.

The sensing area S2 can be any position on the display area. For example, the sensing area S2 is disposed at a mid-lower position corresponding to the display area of the display screen 10. It can be understood that the sensing area S2 is disposed at a middle-lower position corresponding to the display screen 10 for the convenience of the user. For example, when the user holds the mobile terminal 100, the thumb of the user can conveniently touch the location of the sensing area S2. Of course, the sensing area S2 can also be placed at other suitable locations that are convenient for the user to touch.

When the mobile terminal 100 is in a bright screen state and is in the biometric information sensing mode, the display screen 10 emits an optical signal. When an object contacts or approaches the sensing area S2, the photoelectric sensing device 20 receives the light reflected by the object, converts the received light into a corresponding electrical signal, and acquires a predetermined creature of the object according to the electrical signal. Feature information, for example, fingerprint image information. Thus, the photoelectric sensing device 20 can sense a target object that contacts or approaches a local area above the display area.

Please refer to FIG. 4. FIG. 4 shows a partial structure of a photoelectric sensing device 20 according to an embodiment of the present invention. The photosensor device 20 includes a photosensitive die 24, and the photosensitive die 24 includes a plurality of photosensitive pixels 22. The photosensitive pixel 22 is configured to receive an optical signal from above and convert the received optical signal into a corresponding electrical signal. The photosensitive die 24 is provided with an anti-aliasing imaging element 28 for preventing aliasing of received optical signals between adjacent photosensitive pixels 22.

Since the reflection of the light signal is different between different parts of the target object, and the surface of the target object is uneven, some parts of the target object are in contact with the protective cover 30 (see FIG. 3), and some parts are not in contact with the protective cover 30, thereby causing contact. The position is diffusely reflected, and the untouched position is specularly reflected, so that the sensed light signal between adjacent photosensitive pixels 22 may be aliased, thereby causing the acquired sensed image to be blurred. In this regard, the implementation of the present invention In this manner, an anti-aliasing imaging element 28 is disposed on the photosensitive die 24, so that the image obtained by the photosensitive pixel 22 after performing light sensing is relatively clear, thereby improving the sensing accuracy of the photoelectric sensing device 20.

In some embodiments, the anti-aliasing imaging element 28 has light absorbing properties that illuminate the optical signal on the anti-aliasing imaging element 28, only the optical signal that is approximately perpendicular to the photosensitive die 24 can pass through the anti-aliasing Imaging element 28 is received by photosensitive pixel 22, and the remaining optical signals are absorbed by anti-aliasing imaging element 28. In this way, it is possible to prevent aliasing of optical signals received between adjacent photosensitive pixels 22. It should be noted that the optical signal that is approximately perpendicular to the photosensitive die 24 includes an optical signal that is perpendicular to the photosensitive die 24, and is offset from the vertical direction of the photosensitive die 24 by a predetermined range of optical signals. The preset angle range is within ±20°.

Specifically, the anti-aliasing imaging element 28 includes a light absorbing wall 281 and a plurality of light transmissive regions 282 surrounded by a light absorbing wall 281. The light absorbing wall 281 is formed of a light absorbing material. The light absorbing material includes a metal oxide, a carbon black paint, a black ink, and the like. Wherein the metal in the metal oxide is, for example but not limited to, one of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo) or Several. The extending direction of the light transmitting region 282 is a direction perpendicular to the photosensitive die 24 so that the light signal in the direction perpendicular to the photosensitive die 24 can be transmitted through the light signal irradiated to the anti-aliasing imaging element 28. In region 282, the remaining optical signals are absorbed by the light absorbing wall 281.

In some embodiments, as shown in FIG. 5, FIG. 5 illustrates a range of optical signals that pass through the anti-aliasing imaging element 28. Due to the light absorbing characteristics of the anti-aliasing imaging element 28, only the optical signal between the optical signal L1 and the optical signal L2 can pass through the light-transmitting region 282 to the photosensitive pixel 22, and the remaining optical signals are absorbed by the absorption wall 281 of the anti-aliasing imaging element 28. absorb. As can be seen from FIG. 5, the smaller the cross-sectional area of the light-transmitting region 282, the smaller the range of the angle α of the light signal passing through the light-transmitting region 282, and therefore the anti-aliasing effect of the anti-aliasing imaging element 28 is better. As such, the anti-aliasing effect of the anti-aliasing imaging element 28 can be improved by the relatively small area of the light-transmitting region 282 provided by the anti-aliasing imaging element 28. In addition, since the cross-sectional area of the light-transmitting region 282 of the anti-aliasing imaging element 28 is small, each of the photosensitive pixels 22 will correspond to the plurality of light-transmitting regions 282, so that the photosensitive pixels 22 can sense sufficient light signals, The sensing accuracy of the photoelectric sensing device 20 is improved.

Further, please refer to FIG. 6, which shows the structure of the anti-aliasing imaging element 28 of an embodiment of the present invention. The light absorbing wall 281 has a multi-layer structure, and the light absorbing wall includes a light absorbing block 281a and a height block 281b which are alternately stacked. In one embodiment, the light absorbing block 281a is formed of a light absorbing material. The light absorbing material is, for example but not limited to, a metal oxide, a carbon black paint, a black ink, or the like. Wherein the metal in the metal oxide is, for example but not limited to, one of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo) or Several. The height block 281b is, for example but not limited to, a transparent layer formed of a transparent material such as a translucent material, a light absorbing material, or the like.

In some embodiments, the plurality of light absorbing blocks 281a located in the same layer are spaced apart, and the area corresponding to the interval between the light absorbing blocks 281a in the same layer is the light transmitting area 282. Further, a plurality of light absorbing blocks of the same layer 281a and a plurality of padding blocks 281b can be made at one time. Specifically, by providing a mask, the mask is an integrally formed diaphragm, and the diaphragm forms an opening corresponding to the position of the light absorbing block 281a, and the shape and size of the opening are consistent with the shape and size of the light absorbing block 283. . The light absorbing block 281a and the height block 281b which are alternately disposed are sequentially vapor-deposited on a carrier by the mask, thereby forming the anti-aliasing imaging element 28.

By the arrangement of the padding block 281b, not only the process of the anti-aliasing imaging element 28 is accelerated, but also the anti-aliasing effect of the anti-aliasing imaging element 28 can be ensured by the height setting of the padding block 281b.

In some embodiments, the transparent region 282 may be filled with a transparent material to increase the strength of the anti-aliasing imaging element layer, and also to prevent impurities from entering the light-transmitting region 282 to affect the light-transmitting effect. In order to ensure the light transmissive effect of the light-transmitting region 282, a material having a relatively high light transmittance such as glass, PMMA (acrylic), PC (polycarbonate) or the like may be selected as the transparent material.

In some embodiments, please refer to FIG. 7, which illustrates the structure of an anti-aliasing imaging element of another embodiment of the present invention. The anti-aliasing imaging element 28 is of a multi-layer structure, and the anti-aliasing imaging element 28 includes a light absorbing layer 283 and a transparent supporting layer 284 which are alternately stacked; the light absorbing layer 283 includes a plurality of spaced light absorbing blocks 283a; The transparent support layer 284 is formed by filling a transparent material and filling the space 283b between the light absorption blocks 283a together; wherein the area corresponding to the space 283b forms the light transmission area 282.

Further, please refer to FIG. 8. FIG. 8 illustrates a process of preparing an anti-aliasing imaging element according to an embodiment of the present invention. Specifically, in preparing the anti-aliasing imaging element 28, a light absorbing material is first coated on a carrier, and a corresponding portion of the light transmitting region 282 is etched away on the light absorbing material layer, and the unetched portion is formed. A plurality of light absorbing blocks 283a. The etching technique is, for example but not limited to, photolithography, X-ray etching, electron beam etching, and ion beam etching. Moreover, the etching type may include both dry etching and wet etching. Then, the etched light absorbing block 283 is coated with a transparent material, and the transparent material covers not only the plurality of light absorbing blocks 283a but also the space 283b between the plurality of light absorbing blocks 283a, thereby forming the transparent supporting layer 284. . Then, a plurality of light absorbing blocks 283a are formed on the transparent supporting layer 284 in the manner in which the light absorbing layer 283 is formed, and the light absorbing layer 283 and the transparent supporting layer 284 which are alternately stacked in a plurality of layers are sequentially formed, thereby forming the anti-aliasing imaging element 28.

Further, in order to ensure the light transmissive effect of the light-transmitting region 282, the transparent material forming the transparent supporting layer 284 may be selected from materials having a relatively high light transmittance, such as glass, PMMA, PC (polycarbonate), epoxy resin. Wait.

In some embodiments, please refer to FIG. 9, which illustrates the structure of an anti-aliasing imaging element of another embodiment of the present invention. The anti-aliasing imaging element 28 includes a light absorbing layer 283 and a transparent support layer 284 which are alternately stacked, and the thickness of each of the transparent support layers 284 is unequal. That is, the values of the thicknesses h1, h2, and h3 in FIG. 7 are not equal. Optionally, the thickness of the transparent support layer 284 is increased layer by layer, that is, h1 < h2 < h3. In this way, it is possible to avoid that the optical signal outside the vertical direction of the photosensitive die 24 is offset by ±20° and passes through the transparent supporting layer 284 between the light absorbing blocks 283a, thereby improving the Sensing accuracy of the photoelectric sensing device 20. It should be noted that the thickness parameter of each layer of the transparent supporting layer 284 and the width and height parameters of the light absorbing block 283a can be differently set and combined in various combinations to improve the sensing accuracy of the photoelectric sensing device 20.

In some embodiments, the anti-aliasing imaging element 28 is formed directly on the photosensitive die 24, i.e., the carrier when the anti-aliasing imaging element 28 is formed is a photosensitive die 24 having photosensitive pixels 22. However, the anti-aliasing imaging element 28 can be modified, for example, to be disposed on the photosensitive die 24 provided with the photosensitive pixels 22, thereby speeding up the process of the photoelectric sensing device 20.

In some embodiments, the plurality of light transmissive regions 282 in the anti-aliasing imaging element 28 are evenly distributed, thereby making the preparation process of the anti-aliasing imaging element 28 relatively simple. Moreover, the anti-aliasing imaging element 28 can be, for example, an integrally formed film that is separately fabricated and attached to the photosensitive die 24, thereby accelerating the process of the photosensor device 20.

In some embodiments, taking the target object as a finger, when the finger is located on the protective cover 30, if the ambient light is irradiated on the finger, and the finger has many tissue structures, such as the epidermis, bones, meat, blood vessels, and the like, Therefore, part of the light signal in the ambient light will penetrate the finger, and part of the light signal will be absorbed by the finger. The light signal penetrating the finger will be transmitted to the protective cover 30 under the finger and reach the photoelectric sensing device 20. At this time, the photoelectric sensing device 20 not only senses the light signal reflected by the target object, but also senses the ambient light. The light signal that penetrates the finger is so unable to accurately sense. Therefore, in order to prevent the ambient light from affecting the biometric information sensing of the target object by the photoelectric sensing device 20, as shown in FIG. 10, FIG. 10 shows the structure of the photoelectric sensing device 20 of another embodiment of the present invention. A filter film 23 is disposed on the photosensitive die 24, that is, the filter film 23 is disposed between the photosensitive die 24 and the anti-aliasing imaging element 28. The filter film 23 is for filtering optical signals other than the predetermined wavelength band. In this embodiment, the optical signal other than the preset wavelength band is an interference signal formed by ambient light, that is, an optical signal that can penetrate the finger in the ambient light. The filter film 23 filters out the interference signal in the reflected light signal, thereby improving the sensing accuracy of the photoelectric sensor device 20. However, the filter film 23 can also be disposed on the anti-aliasing imaging element 28, that is, the filter film 23 is disposed on the side of the anti-aliasing imaging element 28 away from the photosensitive die 24.

In some embodiments, the optical signal other than the optical signal of the preset wavelength band is the optical signal of the longer wavelength band in the ambient light, because the optical signal of the longer wavelength band can penetrate the target object, and the optical signal of the shorter wavelength band is The target object is absorbed. Therefore, by filtering out the optical signal of the longer wavelength band in the ambient light, the optical signal penetrating the finger in the ambient light can be filtered out, thereby achieving the purpose of eliminating the interference signal of the ambient light.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to the blue light signal, that is, the filter film 23 filters out optical signals other than the blue light signal.

In some embodiments, the predetermined band is a band corresponding to the green light signal, that is, the filter film 23 filters out the light signals other than the green light signal.

Among the red light signals, blue light signals, and green light signals of ambient light, the target object such as a finger absorbs the red light signal the weakest, followed by the green light signal, and absorbs the blue light signal the strongest. That is, ambient light illuminates the finger, and a large amount of blue light signal is absorbed by the finger, and only a small amount or even no blue light signal penetrates the finger. Therefore, selecting the optical signal of the band other than the blue light signal or the green light signal for filtering can greatly eliminate the interference of the ambient light and improve the sensing accuracy of the photoelectric sensing device 20.

In some embodiments, the photosensor device 20 is a sensor chip for sensing biometric information.

In some embodiments, please refer to FIG. 11. FIG. 11 shows the structure of a photoelectric sensing device 20 according to still another embodiment of the present invention. In some embodiments, the photosensor device 20 further includes a package 30 for encapsulating the photosensitive die 24 and all of the devices above the photosensitive die 24, such as The aliasing imaging element 28 and the filter film 23 are packaged. In particular, when the anti-aliasing imaging element 28 is positioned above the filter film 23, the package can fill the light transmissive region 282 together.

Referring to FIG. 12, FIG. 12 shows the structure of a photosensitive die of an embodiment. The photosensitive die (Die) 24 is a semiconductor integrated circuit device further comprising a substrate 26 on which the plurality of photosensitive pixels 22 are formed. In addition, a scan line group and a data line group electrically connected to the photosensitive pixel 22 are formed on the substrate 26, and the scan line group is configured to transmit a scan driving signal to the photosensitive pixel 22 to activate the photosensitive pixel 22 to perform light sensing. The data line group is used to output an electrical signal generated by the photosensitive pixel performing light sensing. The substrate 26 is, for example but not limited to, a silicon substrate or the like.

Specifically, in some embodiments, please refer to FIG. 13, which illustrates the structure of a photoelectric sensing device according to another embodiment of the present invention. The photosensitive pixels 22 are distributed in an array, such as a matrix distribution. Of course, it can also be distributed in other rule manners or in an irregular manner. The scan line group includes a plurality of scan lines 201. The data line group includes a plurality of data lines 202. The plurality of scan lines 201 and the plurality of data lines 202 are disposed to cross each other and disposed between adjacent photosensitive pixels 22. For example, a plurality of scanning lines G1, G2, ..., Gm are arranged at intervals in the Y direction, and a plurality of data lines S1, S2, ..., Sn are arranged at intervals in the X direction. However, the plurality of scanning lines 201 and the plurality of data lines 202 are not limited to the vertical arrangement shown in FIG. 13 , and may be disposed at an angle, for example, 30°, 60°, or the like. In addition, due to the conductivity of the scan lines 201 and the data lines 202, the scan lines 201 and the data lines 202 at the intersections are separated by an insulating material.

It should be noted that the distribution and the number of the scan lines 201 and the data lines 202 are not limited to the above-exemplified embodiments, and the corresponding scan line groups and data line groups may be correspondingly set according to the structure of the photosensitive pixels. .

Further, a plurality of scan lines 201 are connected to a driving circuit 25, and a plurality of data lines 202 are connected to a signal processing circuit 27. The driving circuit 25 is configured to provide a corresponding scan driving signal and transmit it through the corresponding scan line 201. The corresponding photosensitive pixel 22 is applied to activate the photosensitive pixel 22 to perform light sensing. The driving circuit 25 is formed on the substrate 26, and of course, it can also be electrically connected to the photosensitive pixels 22 through a flexible circuit board, that is, a plurality of scanning lines 201 are connected. The signal processing circuit 27 receives an electrical signal generated by the corresponding photosensitive pixel 22 performing light sensing through the data line 202, and acquires biometric information of the target object based on the electrical signal.

In some embodiments, the photoelectric sensing device 20 further includes a controller 29 for controlling the driving circuit to output a corresponding scan driving signal, such as, but not limited to, progressively activating the photosensitive pixel 22 to perform light sensing. . The controller 29 is further configured to control the signal processing circuit 27 to receive the electrical signal output by the photosensitive pixel 22, and after receiving the electrical signal output by all the photosensitive pixels 22 performing the light sensing, generate biometric information of the target object based on the electrical signal. .

Further, the processing circuit 27 and the controller 29 may be formed on the substrate 26 or may be electrically connected to the photosensitive die 24 through a flexible circuit board.

In some embodiments, as shown in FIG. 14, a specific structure of one photosensitive pixel 22 is shown. The photosensitive pixel 22 includes a photosensitive device 220 and a switching device 222. The switching device 222 has a control terminal C and two signal terminals, such as a first signal terminal Sn1 and a second signal terminal Sn2. The control terminal C of the switching device 222 is connected to the scan line 201. The first signal terminal Sn1 of the switching device 222 is connected to a reference signal L via the photosensitive device 220, and the second signal terminal Sn2 of the switching device 222 is connected to the data line 202. It should be noted that the photosensitive pixel 22 illustrated in FIG. 14 is for illustrative purposes only and is not limited to other constituent structures of the photosensitive pixel 22.

Specifically, the above-mentioned photosensitive device 220 is, for example but not limited to, any one or several of a photodiode, a phototransistor, a photodiode, a photo resistor, and a thin film transistor. Taking a photodiode as an example, a negative voltage is applied across the photodiode. At this time, if the photodiode receives the optical signal, a photocurrent is generated in a proportional relationship with the optical signal, and the received optical signal is more intense. Larger, the larger the photocurrent generated, the faster the voltage drop on the negative pole of the photodiode. Therefore, by collecting the voltage signal on the negative pole of the photodiode, the intensity of the optical signal reflected from different parts of the target object is obtained, and the target is obtained. Biometric information of the object. It can be understood that in order to increase the photosensitive effect of the photosensitive device 220, a plurality of photosensitive devices 220 may be disposed.

Further, the switching device 222 is, for example but not limited to, any one or several of a triode, a MOS transistor, and a thin film transistor. Of course, the switching device 222 can also include other types of devices, and the number can also be two, three, and the like.

In some embodiments, in order to further improve the sensing accuracy of the photosensor device 20, the photosensitive device 220 having high sensitivity to the blue light signal may also be selected. The light sensing is performed by selecting the photosensitive device 220 having high sensitivity to the blue light signal and the green light signal, so that the photosensitive device 220 is more sensitive to the light of the blue light signal and the green light signal, and thus the ambient light is also avoided to some extent. Interference caused by red light signals, thereby improving The sensing accuracy of the photoelectric sensing device 20 is obtained.

Taking the structure of the photosensitive pixel 22 shown in FIG. 14 as an example, the gate of the thin film transistor TFT serves as the control terminal C of the switching device 222, and the source and the drain of the thin film transistor TFT correspond to the first signal terminal Sn1 of the switching device 222 and The second signal terminal Sn2. The gate of the thin film transistor TFT is connected to the scanning line 201, the source of the thin film transistor TFT is connected to the negative electrode of the photodiode D1, and the drain of the thin film transistor TFT is connected to the data line 202. The anode of the photodiode D1 is connected to a reference signal L, which is, for example, a ground signal or a negative voltage signal.

When the photosensitive pixel 22 performs light sensing, a scan driving signal is applied to the gate of the thin film transistor TFT through the scan line 201 to drive the thin film transistor TFT to be turned on. At this time, the data line 202 is connected to a positive voltage signal. When the thin film transistor TFT is turned on, the positive voltage signal on the data line 202 is applied to the negative electrode of the photodiode D1 via the thin film transistor TFT. Since the positive electrode of the photodiode D1 is grounded, the photoelectric A reverse voltage is applied across diode D1 such that photodiode D1 is reverse biased, i.e., in operation. At this time, when an optical signal is irradiated to the photodiode D1, the reverse current of the photodiode D1 rapidly increases, thereby causing a change in current on the photodiode D1, which can be obtained from the data line 202. Since the intensity of the optical signal is larger, the reverse current generated is larger. Therefore, according to the current signal acquired on the data line 202, the intensity of the optical signal can be obtained, thereby obtaining the biometric information of the target object.

In some embodiments, the reference signal L may be a positive voltage signal, a negative voltage signal, a ground signal, or the like. As long as the electrical signal provided on the data line 202 and the reference signal L are applied across the photodiode D1 such that a reverse voltage is formed across the photodiode D1 to perform photo sensing, it is within the scope of protection defined by the present invention.

It can be understood that the connection manner of the thin film transistor TFT and the photodiode D1 in the photosensitive pixel 22 is not limited to the connection mode shown in FIG. 14, and may be other connection methods. For example, as shown in FIG. 15, the gate G of the thin film transistor TFT is connected to the scanning line 201, the drain D of the thin film transistor TFT is connected to the anode of the photodiode D1, and the source S of the thin film transistor TFT is connected to the data line 202. The negative terminal of the photodiode D1 is connected to a positive voltage signal.

Please refer to FIG. 16. FIG. 16 shows a partial structure of an OLED panel in which the display screen is an embodiment. Taking the display 10 as an OLED display as an example, the display 10 further includes a transparent substrate 101. The display pixel 12 includes an anode 102 formed on a transparent substrate 101, a light-emitting layer 103 formed on the anode 102, and a cathode 104 formed on the light-emitting layer 103. When a voltage signal is applied to the anode 102 and the cathode 104, a large amount of carriers accumulated on the anode 102 and the cathode 104 will move toward the light-emitting layer 103 and enter the light-emitting layer 103, thereby exciting the light-emitting layer 103 to emit a corresponding light signal.

In certain embodiments, the anode 102 and cathode 104 are made of a conductive material. For example, the anode 102 is made of a suitable conductive material such as indium tin oxide (ITO), which is made of a suitable conductive material such as metal or ITO. to make. The display screen 10 is not limited to an OLED display, but may be other suitable types of displays. In addition, the display screen 10 can be a hard screen of a rigid material or a flexible screen of a flexible material. Moreover, the OLED display panel of the embodiment of the present invention may be a bottom emission type device, a top emission type device, or other display device of a suitable structure type.

Referring to FIG. 17, FIG. 17 shows an opposite structure of a photosensitive device and a display pixel in a photosensitive pixel according to an embodiment. The display pixel 12 is, for example but not limited to, three display pixels of a red pixel R, a green pixel G, and a blue pixel B, wherein red The light-emitting layer in the pixel R is a light-emitting material that emits a red light signal, the light-emitting layer in the green pixel G is a light-emitting material that emits a green light signal, and the light-emitting layer in the blue pixel B is a light-emitting material that emits a blue light signal. Of course, the display screen 10 can also be displayed by other display technologies, such as color conversion technology, which utilizes the light emitted by the blue OLED to absorb the red, green, and blue light signals after being absorbed by the fluorescent dye. It should be noted that the display pixels 12 in the display screen 10 are not limited to the arrangement shown in FIG. 17, and may have other arrangements, such as a pentiel arrangement.

Further, the display screen 10 further includes a driving circuit for driving the display pixels 12 to emit light and a corresponding driving circuit (not shown), and the driving circuit and the corresponding driving circuit can be disposed between the display pixels 12, It can be disposed below each display pixel 12. For better display effect, the area where the display pixel, the driving circuit and the corresponding driving line are set is the opaque area, and the remaining area is the light transmitting area. Photosensitive device 220 is located below the light transmissive region for better light sensing. It can be understood that the light transmissive area and the opaque area in the display screen 10 are not strictly limited, and whether the light transmission is determined by the composition of the display screen 10 and the distribution of the constituent structures. For example, when the structure in which the display pixels 12 are formed adopts a transparent structure, the area in which the display pixels are disposed will become a light-transmitting area.

Referring to FIG. 17, a gap H is provided between adjacent display pixels, and the gap H has a light-transmitting region. The photosensitive device 220 in the photosensitive pixel 22 is disposed below the gap H between adjacent display pixels. The lower part here is, for example but not limited to, directly below, and it is possible to ensure that sufficient light signals are received at the position. It can be understood that the more the optical signal passes through the gap H, the higher the sensing accuracy of the photoelectric sensing device 20.

In some embodiments, please refer to FIG. 18, which shows the structure of another embodiment of an electronic device. The front side of the electronic device 100 includes a first display area 110 and a second display area 120, wherein the first display area 110 occupies most of the area of the entire display area of the front side for displaying a higher resolution image of the electronic device; The display area 120 is located at a mid-lower position of the front side and occupies a small portion of the entire display area for displaying lower resolution images of the electronic device, such as virtual buttons, navigation bars, prompt information, and the like. The photoelectric sensing device 20 is disposed corresponding to the second display area 120 to perform light sensing on the target object placed on the second display area 120 to obtain biometric information of the target object. It should be noted that the first display area 110 and the second display area 120 are not limited to The distribution structure shown in FIG. 18 can be flexibly set according to the actual use requirements of the electronic device.

In some embodiments, the first display area 110 includes a plurality of first display pixels, the second display area 120 includes a plurality of second display pixels, and the first gap ratio between adjacent second display pixels The second gap between adjacent first display pixels is large. Therefore, when the photosensitive device 220 is disposed corresponding to the second gap, more light signals are passed through the second gap, thereby improving the sensing accuracy of the photoelectric sensing device 20.

In some embodiments, the first display area 110 and the second display area 120 may be different display areas of the same display screen. Of course, the first display area 110 and the second display area 120 may also correspond to two display screens, and then the two display screens are spliced together.

In the description of the present specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiment", "example", "specific example", or "some examples", etc. The specific features, structures, materials or characteristics described in the embodiments or examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms does not necessarily mean the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

While the embodiments of the present invention have been shown and described above, it is understood that the foregoing embodiments are illustrative and are not to be construed as limiting the scope of the invention Variations, modifications, substitutions and variations of the embodiments described above are possible.

Claims

A photoelectric sensing device, characterized in that: the photoelectric sensing device comprises a photosensitive die, the photosensitive die comprises a plurality of photosensitive pixels; and the photosensitive die is provided with an anti-aliasing imaging element, the anti-aliasing The stacked imaging element is for preventing aliasing of optical signals received between adjacent photosensitive pixels in the photosensitive die.
The photoelectric sensing device according to claim 1, wherein said anti-aliasing imaging element is disposed on a side away from said photosensitive die or between said photosensitive die and said anti-aliasing imaging element There is a filter film for filtering optical signals other than the preset wavelength band.
The photoelectric sensor device according to claim 2, wherein the predetermined wavelength band is a wavelength band corresponding to a blue and green light signal.
The photoelectric sensing device of claim 1 wherein said anti-aliasing imaging element comprises a light absorbing wall and a plurality of light transmissive regions surrounded by the light absorbing wall.
The photoelectric sensor device according to claim 4, wherein said light transmitting regions are uniformly distributed.
A photoelectric sensor device according to claim 4, wherein said light absorbing wall comprises a plurality of light absorbing blocks and padding blocks which are alternately stacked.
The photoelectric sensor device according to claim 6, wherein said spacer block is made of a transparent material.
The photoelectric sensor device according to claim 4, wherein said transparent region is filled with a transparent material.
The photoelectric sensing device according to claim 1, wherein the anti-aliasing imaging element comprises a plurality of layers of light absorbing layers and transparent support layers arranged alternately; the light absorbing layer comprises a plurality of spaced light absorbing blocks; The transparent supporting layer is formed by filling with a transparent material and filling the interval between the light absorbing blocks together; wherein the area corresponding to the interval forms a light transmitting area.
The photoelectric sensing device according to claim 9, wherein each of said transparent support layers has a thickness that is not equal.
The photoelectric sensing device according to claim 10, wherein the thickness of said transparent supporting layer is increased layer by layer.
The photoelectric sensing device according to claim 1, wherein said anti-aliasing imaging element is formed directly on said photosensitive panel, or said anti-aliasing imaging element is separately fabricated and then disposed in said On the photosensitive die.
The photoelectric sensing device according to claim 2, wherein said photoelectric sensing device further comprises a package for anti-aliasing said photosensitive die and said photosensitive die The stacked imaging element and the filter film are packaged.
The photosensor device of claim 1 wherein said photosensitive die comprises a substrate, said photosensitive pixels being distributed in an array on said substrate.
The photoelectric sensing device according to claim 1, wherein said photosensitive pixel comprises at least one photosensitive device for receiving an optical signal and converting the received optical signal into a corresponding electrical signal.
The photosensor device of claim 15 wherein said photosensitive device comprises one or more of a photodiode, a photo resistor, and a phototransistor.
The photoelectric sensor device according to claim 14, wherein a scanning line group and a data line group electrically connected to said photosensitive pixels are disposed between said adjacent photosensitive pixels.
The photoelectric sensing device according to claim 17, wherein said photoelectric sensing device further comprises a driving circuit for driving said photosensitive pixel to perform light sensing, and said driving circuit is correspondingly connected to said scanning line group And for providing a corresponding driving signal and transmitting to the photosensitive pixel through the scan line group.
The photoelectric sensing device according to claim 18, wherein said driving circuit is formed on said substrate.
The photoelectric sensing device according to claim 19, wherein said photoelectric sensing device further comprises signal processing circuit, said signal processing circuit acquiring an object based on an electrical signal generated by said photosensitive pixel performing light sensing Biometric information of the object.
The photoelectric sensing device according to claim 20, wherein said photoelectric sensing device further comprises a controller for controlling said driving circuit to output a corresponding driving signal, and controlling said signal processing circuit Receiving an electrical signal output by the photosensitive pixel.
The photoelectric sensing device according to claim 20, wherein said signal processing circuit and said controller are both disposed on said substrate, or said signal processing circuit and said controller pass said flexible circuit board and said photosensitive The bare chip is electrically connected.
The photoelectric sensing device according to any one of claims 1 to 2, wherein the photoelectric sensing device is a fingerprint sensing device.
The photoelectric sensing device according to any one of claims 1 to 2, wherein the photoelectric sensing device is a photosensitive chip for sensing biometric information.
The photoelectric sensing device according to claim 1 or 2, wherein said photoelectric sensing device further comprises a package for anti-aliasing said photosensitive die and said photosensitive die The stacked imaging elements are packaged.
An electronic device comprising: a display screen and the photoelectric sensing device according to any one of claims 1 to 25, wherein the photoelectric sensing device is disposed under the display screen.