WO2019026045A1 - Circuit d'attaque de grille à capacité d'amorçage bipolaire - Google Patents
Circuit d'attaque de grille à capacité d'amorçage bipolaire Download PDFInfo
- Publication number
- WO2019026045A1 WO2019026045A1 PCT/IB2018/055864 IB2018055864W WO2019026045A1 WO 2019026045 A1 WO2019026045 A1 WO 2019026045A1 IB 2018055864 W IB2018055864 W IB 2018055864W WO 2019026045 A1 WO2019026045 A1 WO 2019026045A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- top switch
- voltage
- bootstrap
- gate driver
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Definitions
- TITLE A GATE DRIVER WITH BIPOLAR BOOTSTRAP CAPABILITY TECHNICAL FIELD
- the present invention is related to the field of electronics, to a power converter.
- Gate driver technology of a synchronous buck converter more specifically to a circuit with passive elements to drive the top switch with a bipolar drive signal without using any isolated power supplies.
- Wide band gap devices such as SiC based JFETs and GaN based high electron mobility transistors (HEMT) have been identified as promising power semiconductor devices due to their excellent switching characteristic along with very low on state voltage drop.
- Peftitsis et al; in "Self-powered gate driver for normally on silicon carbide junction field -effect transistors without external power supply" IEEE transaction on power electronics 28.392013): 1488-1501 discusses about normally on SiC JFETs that are commercially available at relatively high voltage rating.
- normally On MOSFETs require gate driver with bipolar voltage capability.
- the switch is on at zero gate source voltage.
- a negative voltage is required to turn it off.
- a positive gate source voltage is required to push it deep into saturation so that the conduction loss is minimal.
- Normally off Silicon based IGBT and Silicon carbide based MOSFETs also require bipolar gate drive signal.
- a chopper leg consists of two series connected power semiconductor devices.
- a chopper leg or a synchronous buck converter is widely used in point of load converters (PoL), DC to DC converters with bi-directional power flow, DC to AC inverters and AC to DC active rectifiers. Isolated power supplies are required to drive the top switch of the chopper leg with bipolar gate drive.
- a method to generate bipolar or unipolar negative gate voltage waveform using a unipolar positive gate driver supplied by a non-isolated positive power supply to drive the bottom switch of a chopper leg is presented in "A gate driver for synchronous buck converter with normally on semiconductor switches" Power electronics, Drives and energy systems (PEDES), 2016 IEEE International Conference.
- PEDES Power electronics, Drives and energy systems
- the document informs about a top switch being supplied using the same simple bootstrap circuit for synchronous buck converter with normally off MOSFETS, hence no negative or isolated power supply is required in this solution.
- this approach requires more power when compared with a solution that uses bipolar gate drivers, also the said approach involves passive elements and have higher component count resulting in reduced power density and reliability.
- US patent No.7248093 proposes a circuit involving active switches to drive the top switch. An isolated power supply is required to drive the top switch but this solution increases the cost and reduces power density and reliability.
- the present invention proposes a circuit with passive elements to drive the top switch requiring a bipolar drive signal, without using any isolated power supplies.
- a circuit system comprising a passive circuit, chopper leg and a bipolar gate driver; the passive circuit drive the top switch of the chopper leg from the bipolar gate driver without requiring isolated power supply; wherein the passive circuit comprises bootstrap circuits for positive voltage and negative voltage; a method to drive top switch of a chopper leg of circuit system of present invention, said method involving bootstrap circuit for positive voltage comprises a resistor (Ri), capacitor (C BP ) and Diode (DO; wherein top switch bootstrap capacitors C BP of gate driver is charged to positive voltage Vp through diode Di and resistor Ri when bottom MOSFET Q 2 is on to apply voltage Vp across gate source of top switch to turn on; and a method to drive top switch of a chopper leg of circuit system of present invention, said method involving bootstrap circuit for and bootstrap circuit for negative voltage comprises a resistor (R 2 ), capacitor (C BN ) and Diodes (D 2 , D 3 , D 4 , D5) and Zener Diode (Z
- Figure 1 shows proposed gate driver circuit with power circuit of synchronous buck converter.
- Figure 2 shows RCD circuit before PWM signal to add dead time in the gate pulse of synchronous buck converter.
- Figure 3 shows top view of the synchronous buck converter with gate driver circuit.
- Figure 4 shows Input voltage (5V/div), output voltage (5V/div), pole voltage (lOV/div), output voltage (5V/div), pole voltage (lOV/div), inductor current ( ⁇ /div) of synchronous buck converter.
- FIG. 5 shows Gate source voltage with turn on transition of top switch (5V/div), and turn off transition of bottom switch (5V/div).
- FIG. 6 shows Gate source voltage with turn off transition of top switch (5V/div), and turn on transition of bottom switch (5V/div).
- the present invention is in relation to a circuit system comprising a passive circuit, chopper leg and a bipolar gate driver; the passive circuit drive the top switch of the chopper leg from the bipolar gate driver without requiring isolated power supply; wherein the passive circuit comprises bootstrap circuits for positive voltage and negative voltage.
- the bootstrap circuit for positive voltage comprises a resistor (Ri), capacitor (C BP ) and Diode (Di) and bootstrap circuit for negative voltage comprises a resistor (R 2 ), capacitor (C BN ) and Diodes (D 2 , D 3 , D 4 , D5) and Zener Diode (Z NI ).
- the bootstrap circuit for negative voltage does not interfere with the positive voltage to drive top switch.
- the chopper leg is selected from a group of power converters comprising inverter, synchronous buck converter and the like.
- the bipolar gate driver act as a current booster and voltage translator circuit.
- the switches ( Ql and Q2 ) of the chopper leg is selected from a group comprising Normally on MOSFETs, insulated gate bipolar transistors, Normally off SiC or eGaN MOSFETS.
- the present invention is also in relation to a method to drive top switch of a chopper leg of circuit system of present invention , said method involving bootstrap circuit for positive voltage comprises a resistor (Ri), capacitor (C BP ) and Diode (DO; wherein top switch bootstrap capacitors C BP of gate driver is charged to positive voltage Vp through diode Di and resistor Ri when bottom MOSFET Q 2 is on to apply voltage Vp across gate source of top switch to turn on.
- the present invention is also in relation to a method to drive top switch of a chopper leg of circuit system of invention, said method involving bootstrap circuit for and bootstrap circuit for negative voltage comprises a resistor (R 2 ), capacitor (C BN ) and Diodes (D 2 , D 3 , D 4 , D5) and Zener Diode (Z NI ); wherein the top switch bootstrap capacitor C BN of gate driver is charged to negative voltage V N through diodes D 4 , D 2 and resistor R 2 when top switch Qi is on and bottom switch Q 2 is off.
- the Zener diode Z NI , diodes D 3 , D5 provides negative voltage to turn the top switch Qi off.
- This invention presents a method to drive top switch of a synchronous buck converter or a chopper leg implemented with power semiconductor switches that need bipolar gate drive, without any isolated power supply.
- the invention provides unique circuit with few passive components that can drive the top switch without using any additional isolated power supply or active elements.
- the Figure 1 shows the proposed circuit for the gate driver along with the power circuit of a synchronous buck converter with normally on type of MOSFETs Qi and Q 2 .
- V DC is the input voltage
- Vo is the regulated output voltage of the synchronous buck converter.
- GD is the block diagram of standard bipolar gate driver. GD accepts the control signals for top and bottom switches PWMi and PWM 2 with respect to the system ground. The PWMs are digital signals with voltage levels Vcc and ground and complementary with respect to each other.
- a RCD circuit, shown in Figure 2 is used to provide a delay in the rising-edge of the PWM signals so that a dead time is generated between the two PWM signals.
- gate driver When the voltage level of the PWM is more than threshold voltage of the gate driver, gate driver will accept it as signal high and vice-versa.
- the gate driver is essentially a voltage level shifter and a current booster circuit.
- a pulse with amplitude of Vcc with respect to ground, applied at the input PWM 2 of GD is translated into (V CC2 -V EE2 ) with respect to pin V EE2 at the output pin OP 2 .
- Output voltage OP 2 with respect to ground will be a bipolar pulse with positive voltage Vp and negative voltage -V N (Vcc 2 is connected to Vp and V EE2 is connected to -V N ).
- a pulse at the input PWMi with respect to ground is translated to a pulse of amplitude (V CCI -V EEI ) with respect to V EEI at the output pin OPi of GD.
- Bootstrap capacitors C BP and C BN are used to provide the supply to the top driver.
- the capacitor C BP is charged to Vp through diode Dl and resistance Ri when bottom MOSFET Q 2 is on (pole voltage is zero in this state) and will be applied across gate-source of the top switch to turn it on.
- the capacitor C BN is charged to -V N through diodes D 4 , D 2 and resistance R 2 when top MOSFET Qi is on (pole voltage is V DC and the diode D 3 reverse biased) and will be applied across the gate-source of top switch to turn it off.
- Proposed circuit operates in the following modes:
- PWMi is Vcc and PWM 2 is GND which connects OPi to V C ci and OP 2 to V EE2 - Voltage across gate source of Q 2 is -V N - Pole voltage is V DC - D I is reverse biased.
- CBP will charge the input capacitance Cissl of Qi to the voltage Vp through gate resistance RG1.
- CBN will be charged to voltage -V N with polarity as shown in figure 1 through diodes D 4 , D 2 and R 2 .
- D 3 is reverse biased.
- PWMi signal is changed to ground which will disconnect OPi from Vcci and connect it to V EEI -
- the input capacitor Cissl of Qi is initially charged to Vp.
- the pole voltage is same as the DC bus voltage. Due to the output capacitances of the MOSFETs the pole voltage will remain close to the DC bus voltage till the bottom switch is turned on.
- Voltage at the anode terminal of diode D 2 is sum of pole voltage Vp 0 i e and Vp which will ensure diode D 2 in forward biased.
- Cissl will start discharging to asymptotically reach -(Vp 0 ie+VN) until zener Z I breaks down and clamp the voltage across Cissl to negative voltage ( -V N )- This will ensure complete turn off of the top MOSFET Ql.
- PWM 2 signal is changed to Vcc which will disconnect OP 2 from V EE2 and connect to Vcc 2 - This will charge Ciss2 from -V N to Vp through gate resistance R G2 .
- pole voltage is zero and CBN is applied across Cissl through RGi and D 3 which discharges Cissl to negative voltage (-V N )- Positive bootstrap capacitor, C BP will start charging through Ri and Q 2 to voltage Vp.
- Diode D 4 is reversed bias in this mode.
- a synchronous buck converter with commercially available normally on MOSFET, IXTA6N50D2, driven by the proposed gate driver circuit has been designed, fabricated and tested.
- a photograph of this converter is shown in the figure 3.
- a output load current (6W output power) are provided in Figure 4.
- the pole voltage, inductor current and output voltage waveforms confirm the synchronous buck mode of operation of the converter.
- Figure 5 -6 shows the gate voltage waveforms of both the top and the bottom devices, during the two transitions namely the power to free wheel and free wheel to power. Accordingly it is noted, that the gate waveforms of the top switch are bipolar in accordance with expectation and confirms the operation of the proposed circuit.
- the present invention is in relation to a power converter, more specifically to a synchronous buck converter comprising gate driver system with passive elements to drive the top switch without using any isolated power supplies; and provides a simple cost effective solution to the associated problems.
Landscapes
- Power Conversion In General (AREA)
Abstract
La présente invention concerne un système et un procédé permettant d'attaquer le commutateur supérieur au moyen d'un signal d'attaque bipolaire d'un convertisseur abaisseur synchrone ou d'une branche de hacheur sans utiliser d'alimentation électrique isolée et un circuit associé.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201741027819 | 2017-08-04 | ||
IN201741027819 | 2017-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019026045A1 true WO2019026045A1 (fr) | 2019-02-07 |
Family
ID=65233563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2018/055864 WO2019026045A1 (fr) | 2017-08-04 | 2018-08-03 | Circuit d'attaque de grille à capacité d'amorçage bipolaire |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2019026045A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021077076A1 (fr) * | 2019-10-18 | 2021-04-22 | Texas Instruments Incorporated | Circuits d'amorçage de commande de grille et procédés associés |
US11342911B2 (en) | 2019-10-18 | 2022-05-24 | Texas Instruments Incorporated | Gate driver bootstrap circuits and related methods |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205092791U (zh) * | 2015-10-16 | 2016-03-16 | 深圳唐磁电气有限公司 | 一种基于自举方式的h桥控制电路 |
US9490697B2 (en) * | 2011-12-05 | 2016-11-08 | Freescale Semiconductor, Inc. | Self-bootstrap driving circuit and DC-DC converter |
-
2018
- 2018-08-03 WO PCT/IB2018/055864 patent/WO2019026045A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9490697B2 (en) * | 2011-12-05 | 2016-11-08 | Freescale Semiconductor, Inc. | Self-bootstrap driving circuit and DC-DC converter |
CN205092791U (zh) * | 2015-10-16 | 2016-03-16 | 深圳唐磁电气有限公司 | 一种基于自举方式的h桥控制电路 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021077076A1 (fr) * | 2019-10-18 | 2021-04-22 | Texas Instruments Incorporated | Circuits d'amorçage de commande de grille et procédés associés |
US11342911B2 (en) | 2019-10-18 | 2022-05-24 | Texas Instruments Incorporated | Gate driver bootstrap circuits and related methods |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8928363B2 (en) | Semiconductor drive circuit and power conversion apparatus using same | |
US8513983B2 (en) | Gate drive circuit with overdrive protection | |
US9793260B2 (en) | System and method for a switch having a normally-on transistor and a normally-off transistor | |
US11245324B2 (en) | Switching converter and a method thereof | |
CN104170254B (zh) | 用于保护氮化镓场效应晶体管的栅极的驱动器电路的系统和设备 | |
US9800245B2 (en) | Bipolar gate driver | |
US9712050B2 (en) | Power converter utilizing a resonant half-bridge and charge pump circuit | |
Seidel et al. | A fully integrated three-level 11.6 nC gate driver supporting GaN gate injection transistors | |
US20060170042A1 (en) | Resonant gate drive circuits | |
US10903829B2 (en) | Switched capacitor driving circuits for power semiconductors | |
WO2021117821A1 (fr) | Circuit d'attaque de grille de circuit commutateur, et circuit de commande d'alimentation électrique de commutation | |
US10700590B2 (en) | Drive device and power conversion device | |
KR20080106283A (ko) | 전력 변환 장치 | |
CN108696103B (zh) | 电子装置和用于对电平转换器电路进行偏置的方法 | |
US20180159418A1 (en) | Gate driver circuit for power converters incorporating normally on transistors and method thereof | |
KR101758808B1 (ko) | 지능형 파워 모듈 및 그의 전원구동모듈 | |
Long et al. | A high-frequency resonant gate driver for enhancement-mode GaN power devices | |
WO2019026045A1 (fr) | Circuit d'attaque de grille à capacité d'amorçage bipolaire | |
US10784794B2 (en) | GaN FET gate driver for self-oscillating converters | |
Liu et al. | Building blocks for future dual-channel GaN gate drivers: Arbitrary waveform driver, bootstrap voltage supply, and level shifter | |
US20110181218A1 (en) | Semiconductor apparatus | |
JP5527187B2 (ja) | 半導体装置 | |
US20180198368A1 (en) | Fast Charge Sharing Between Capacitors of a Dual Input Path DC/DC Converter | |
Hannon et al. | Design and optimisation of a high current, high frequency monolithic buck converter | |
US11876455B2 (en) | Multi-mode two-phase buck converter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18841055 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18841055 Country of ref document: EP Kind code of ref document: A1 |