WO2019019728A1 - Mask - Google Patents

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Publication number
WO2019019728A1
WO2019019728A1 PCT/CN2018/084521 CN2018084521W WO2019019728A1 WO 2019019728 A1 WO2019019728 A1 WO 2019019728A1 CN 2018084521 W CN2018084521 W CN 2018084521W WO 2019019728 A1 WO2019019728 A1 WO 2019019728A1
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WIPO (PCT)
Prior art keywords
opening
electrode lead
region
mask
substrate
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PCT/CN2018/084521
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French (fr)
Chinese (zh)
Inventor
安乐平
李高敏
郝力强
刘宏俊
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昆山维信诺科技有限公司
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Publication of WO2019019728A1 publication Critical patent/WO2019019728A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to the field of semiconductors, and more particularly to a mask used in the preparation of semiconductor devices.
  • an anode layer 122 eg, an ITO pattern layer
  • an anode lead layer 124 electrically connected to the anode layer are generally prepared on the substrate 110, and then an insulating layer 126 is prepared and isolated.
  • Each of the film layers such as the pillars 128 and the organic material layer (not shown).
  • the organic material layer is prepared on the anode layer 122
  • the anode lead layer 124 needs to be shielded using a mask 210, and the mask 210 may be in direct contact with the anode lead layer 124, resulting in the anode lead.
  • the layer 124 is easily scratched, causing a undesirable phenomenon in the OLED.
  • the present invention provides a mask for preparing an OLED device on a substrate, the substrate being provided with a device region and an electrode lead region disposed on at least one side of the device region, the device a region for forming the OLED device, the electrode lead region for forming an electrode lead layer electrically connected to an electrode of the OLED device, the mask plate being provided with a first opening and a first opening communicating with each other along a thickness direction thereof a second opening, the first opening corresponding to the device region, the second opening has an area larger than the first opening and covering the first opening, and the second opening is formed to cooperate with the first opening a step surface capable of covering the electrode lead region, the second opening having a depth greater than a thickness of the electrode lead layer.
  • the depth of the first opening is equal to or less than one-half of the thickness of the mask.
  • the shape of the stepped surface is the same as the shape of the electrode lead region.
  • the stepped surface has the same size as the electrode lead region.
  • the opposite sides of the device region are respectively provided with the electrode lead regions, and the second openings and the first openings respectively form the step faces on the opposite sides.
  • a plurality of the device regions are disposed on the substrate, and at least one side of each of the device regions is provided with the electrode lead region, and the mask plate is provided with a plurality of mutual The first opening and the second opening are connected.
  • the stepped surface is for forming a receiving cavity for receiving the electrode lead layer with the substrate.
  • the mask is provided with one side of the second opening for contacting the substrate.
  • a deposition material is deposited in the device region through the first opening.
  • the stepped surface when the mask plate is in contact with the substrate by the second opening and the step surface, the stepped surface cooperates with the substrate to form a receiving cavity for accommodating the electrode lead layer.
  • the electrode lead layer When depositing an organic material layer on the device region, the electrode lead layer is housed in the receiving cavity, and a mask plate above the receiving cavity provides shielding for the electrode lead layer to prevent deposition of organic material on the An electrode lead layer, and since the depth of the second opening is greater than a thickness of the electrode lead layer, a gap exists between the stepped surface and the electrode lead layer, so that the electrode lead layer is not The mask is bruised.
  • FIG. 1 is a schematic structural view of a conventional mask for the preparation of an OLED device on a substrate
  • FIG. 2 is a schematic structural view of a mask plate for preparing an OLED device on a substrate according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a mask according to another embodiment of the present invention.
  • Figure 4 is a partial enlarged view of A in Figure 3.
  • the present invention provides a mask 220 for use in the fabrication of an OLED device on a substrate 110.
  • the substrate 110 is provided with a device region 112 and an electrode lead region 114 disposed on at least one side of the device region 112.
  • the device region 112 is used to form the OLED device
  • the electrode lead region 114 is used to form an electrode lead layer 124 that is electrically connected to electrodes of the OLED device.
  • the mask plate 220 is provided with a first opening 222 and a second opening 224 that communicate with each other along the thickness direction thereof.
  • the first opening 222 corresponds to the device region 112.
  • the second opening 224 has an area larger than the first opening 222 and covers the first opening 222.
  • the second opening 222 and the first opening 224 can cooperate to form a stepped surface 223 .
  • the stepped surface 223 can cover the electrode lead region 114.
  • the depth of the second opening 224 is greater than the thickness of the electrode lead layer 124.
  • the present invention can provide the second opening 224 and the stepped surface 223, so that the stepped surface 223 can be made when the masking plate 220 is in contact with the substrate 110 through a surface on which the second opening 224 is disposed.
  • the substrate 110 cooperates to form a receiving cavity for accommodating the electrode lead layer 124.
  • the electrode lead layer 124 is housed in the receiving cavity, and a mask plate above the receiving cavity provides shielding for the electrode lead layer 124 to prevent deposition of organic materials.
  • the organic material layer may be deposited in the device region 112 through the first opening 222.
  • the depth of the second opening 224 is equal to or less than 1/2 of the thickness of the mask 220. At this time, it is ensured that the organic material layer does not pass through when depositing the organic material layer. A gap between the stepped surface 223 and the electrode lead layer 124 is deposited on the electrode lead layer 124, and it is ensured that the mask 220 has a sufficient thickness at the stepped surface 223 (for example, equal to The depth of the first opening 222 is not affected by the deformation of the mask 220 during use to damage the electrode lead layer 124.
  • the shape of the stepped surface 223 may match the shape of the electrode lead region 124 to cover the electrode lead region 124.
  • the stepped surface 223 may have the same size as the electrode lead region 124 such that the stepped surface 223 can cover both the electrode lead region 124 and the second opening 224 region as small as possible. It is ensured that the mask 220 is not easily deformed.
  • the opposite sides of the device region 112 are respectively provided with electrode lead regions 114, and the second openings 224 and the first openings 222 respectively form the step faces 223 on opposite sides of the device region 112. Two of the step faces 223 correspond to the two electrode lead regions 114, respectively, for protecting the two electrode lead regions 114.
  • a plurality of device regions are disposed on the substrate, and at least one side of each device region is provided with an electrode lead region.
  • the mask 220 may be provided with a plurality of first openings 222 and second openings 224 that communicate with each other along its thickness direction. At this time, the organic material layer can be simultaneously deposited on a plurality of device regions, thereby greatly improving the preparation efficiency of the OLED device.
  • the stepped surface is for forming a receiving cavity for receiving the electrode lead layer with the substrate.
  • the mask is provided with one side of the second opening for contacting the substrate, and a deposition material is deposited in the device region through the first opening.
  • the mask 220 is not only suitable for the preparation of the organic material layer, but also for the preparation of other film layers which are only disposed in the device region 112 and are not disposed in the electrode lead region 114.
  • the mask provided by the invention can avoid the bruising of other pattern layers already provided on the substrate when preparing the film layer of the OLED device, thereby greatly improving the yield of the OLED device.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A mask for preparing an OLED device on a substrate. The substrate is provided with a device region and an electrode lead region disposed on at least one side of the device region. The device region is used to form the OLED device. The electrode lead region is used to form an electrode lead layer electrically connected to an electrode of the OLED device. The mask is provided with a first opening and a second opening in a thickness direction thereof, and the first opening and the second opening communicate with each other. The first opening corresponds to the device region. The second opening is larger than the first opening and cooperates with the first opening to form a stepped surface. The stepped surface is capable of covering the electrode lead region. The depth of the second opening is greater than the thickness of the electrode lead layer. The mask provided by the present invention does not cause contact damage to an electrode lead layer, and greatly improves OLED yield.

Description

掩膜板Mask 技术领域Technical field
本发明涉及半导体领域,特别是涉及一种半导体器件制备过程中使用的掩膜板。The present invention relates to the field of semiconductors, and more particularly to a mask used in the preparation of semiconductor devices.
背景技术Background technique
请参阅图1,现有技术在制备OLED时,一般先在基板110上制备阳极层122(例如ITO图型层)以及与阳极层电连接的阳极引线层124,然后再制备绝缘层126、隔离柱128、有机材料层(未图示)等各膜层。在所述阳极层122上制备所述有机材料层时,需要使用掩膜板210对所述阳极引线层124进行屏蔽,而掩膜板210会与阳极引线层124直接接触,导致所述阳极引线层124容易被蹭伤,从而使所述OLED出现不良现象。Referring to FIG. 1 , in the prior art, in preparing an OLED, an anode layer 122 (eg, an ITO pattern layer) and an anode lead layer 124 electrically connected to the anode layer are generally prepared on the substrate 110, and then an insulating layer 126 is prepared and isolated. Each of the film layers such as the pillars 128 and the organic material layer (not shown). When the organic material layer is prepared on the anode layer 122, the anode lead layer 124 needs to be shielded using a mask 210, and the mask 210 may be in direct contact with the anode lead layer 124, resulting in the anode lead. The layer 124 is easily scratched, causing a undesirable phenomenon in the OLED.
发明内容Summary of the invention
基于此,有必要提供一种不会蹭伤OLED电极引线层的掩膜板。Based on this, it is necessary to provide a mask that does not scratch the OLED electrode lead layer.
为实现上述目的,本发明提供了一种掩膜板,用于基板上OLED器件的制备,所述基板上设置有器件区和设置于所述器件区至少一侧的电极引线区,所述器件区用于形成所述OLED器件,所述电极引线区用于形成与所述OLED器件的电极电连接的电极引线层,所述掩膜板沿其厚度方向设置有相互连通的第一开口和第二开口,所述第一开口与所述器件区相对应,所述第二开口的面积大于所述第一开口且覆盖所述第一开口,所述第二开口与所述第一开口配合形成台阶面,所述台阶面能够覆盖所述电极引线区,所述第二开口的深度大于所述电极引线层的厚度。In order to achieve the above object, the present invention provides a mask for preparing an OLED device on a substrate, the substrate being provided with a device region and an electrode lead region disposed on at least one side of the device region, the device a region for forming the OLED device, the electrode lead region for forming an electrode lead layer electrically connected to an electrode of the OLED device, the mask plate being provided with a first opening and a first opening communicating with each other along a thickness direction thereof a second opening, the first opening corresponding to the device region, the second opening has an area larger than the first opening and covering the first opening, and the second opening is formed to cooperate with the first opening a step surface capable of covering the electrode lead region, the second opening having a depth greater than a thickness of the electrode lead layer.
在其中一个实施例中,所述第一开口的深度等于或小于所述掩膜板厚度的二分之一。In one of the embodiments, the depth of the first opening is equal to or less than one-half of the thickness of the mask.
在其中一个实施例中,所述台阶面的形状与所述电极引线区的形状相同。In one of the embodiments, the shape of the stepped surface is the same as the shape of the electrode lead region.
在其中一个实施例中,所述台阶面的尺寸与所述电极引线区的尺寸相同。In one of the embodiments, the stepped surface has the same size as the electrode lead region.
在其中一个实施例中,所述器件区相对的两侧分别设置有所述电极引线区,所述第二开口与所述第一开口在所述相对的两侧分别形成所述台阶面。In one embodiment, the opposite sides of the device region are respectively provided with the electrode lead regions, and the second openings and the first openings respectively form the step faces on the opposite sides.
在其中一个实施例中,所述基板上设置有多个所述器件区,每一所述器件区的至少一侧均设置有所述电极引线区,所述掩膜板上设置有多个相互连通的所述第一开口和第二开口。In one embodiment, a plurality of the device regions are disposed on the substrate, and at least one side of each of the device regions is provided with the electrode lead region, and the mask plate is provided with a plurality of mutual The first opening and the second opening are connected.
在其中一个实施例中,所述台阶面用于与所述基板形成用于容纳所述电极引线层的容纳腔。In one of the embodiments, the stepped surface is for forming a receiving cavity for receiving the electrode lead layer with the substrate.
在其中一个实施例中,所述掩膜板设置有所述第二开口的一面用于与所述基板接触。In one embodiment, the mask is provided with one side of the second opening for contacting the substrate.
在其中一个实施例中,沉积材料通过所述第一开口沉积于所述器件区内。In one of the embodiments, a deposition material is deposited in the device region through the first opening.
本发明通过设置所述第二开口和所述台阶面,能够使得所述掩膜板与所述基板接触时,所述台阶面与所述基板配合形成用于容纳所述电极引线层的容纳腔。在所述器件区上沉积有机材料层时,所述电极引线层容纳在所述容纳腔内,所述容纳腔上方的掩膜板为所述电极引线层提供屏蔽,防止有机材料沉积于所述电极引线层,并且由于所述第二开口的深度大于所述电极引线层的厚度,在所述台阶面与所述电极引线层之间存在间隙,从而使得所述电极引线层不会被所述掩膜板蹭伤。According to the present invention, when the mask plate is in contact with the substrate by the second opening and the step surface, the stepped surface cooperates with the substrate to form a receiving cavity for accommodating the electrode lead layer. . When depositing an organic material layer on the device region, the electrode lead layer is housed in the receiving cavity, and a mask plate above the receiving cavity provides shielding for the electrode lead layer to prevent deposition of organic material on the An electrode lead layer, and since the depth of the second opening is greater than a thickness of the electrode lead layer, a gap exists between the stepped surface and the electrode lead layer, so that the electrode lead layer is not The mask is bruised.
附图说明DRAWINGS
图1为传统掩膜板用于基板上OLED器件的制备的结构示意图;1 is a schematic structural view of a conventional mask for the preparation of an OLED device on a substrate;
图2为根据本发明的一个实施例的掩膜板用于基板上OLED器件的制备的结构示意图;2 is a schematic structural view of a mask plate for preparing an OLED device on a substrate according to an embodiment of the present invention;
图3为根据本发明的另一实施例的掩膜板的结构示意图;3 is a schematic structural view of a mask according to another embodiment of the present invention;
图4为图3中的A处的局部放大图。Figure 4 is a partial enlarged view of A in Figure 3.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白,以下通过实施例,并结合附图,对本发明进行进一步详细说明。应当理解,此处所描述的具体实 施例仅用以解释本发明,并不用于限定本发明。In order to make the objects, the technical solutions and the advantages of the present invention more comprehensible, the present invention will be further described in detail by the accompanying drawings. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
请参阅图2,本发明提供一种掩膜板220,用于基板110上OLED器件的制备。所述基板110上设置有器件区112和设置于所述器件区112至少一侧的电极引线区114。所述器件区112用于形成所述OLED器件,所述电极引线区114用于形成与所述OLED器件的电极电连接的电极引线层124。Referring to FIG. 2, the present invention provides a mask 220 for use in the fabrication of an OLED device on a substrate 110. The substrate 110 is provided with a device region 112 and an electrode lead region 114 disposed on at least one side of the device region 112. The device region 112 is used to form the OLED device, and the electrode lead region 114 is used to form an electrode lead layer 124 that is electrically connected to electrodes of the OLED device.
所述掩膜板220沿其厚度方向设置有相互连通的第一开口222和第二开口224。所述第一开口222与所述器件区112相对应。所述第二开口224的面积大于所述第一开口222且覆盖所述第一开口222。所述第二开口222与所述第一开口224可配合形成台阶面223。所述台阶面223能够覆盖所述电极引线区114。所述第二开口224的深度大于所述电极引线层124的厚度。The mask plate 220 is provided with a first opening 222 and a second opening 224 that communicate with each other along the thickness direction thereof. The first opening 222 corresponds to the device region 112. The second opening 224 has an area larger than the first opening 222 and covers the first opening 222. The second opening 222 and the first opening 224 can cooperate to form a stepped surface 223 . The stepped surface 223 can cover the electrode lead region 114. The depth of the second opening 224 is greater than the thickness of the electrode lead layer 124.
本发明通过设置所述第二开口224和所述台阶面223,能够使得所述掩膜板220通过设置有所述第二开口224的一面与所述基板110接触时,所述台阶面223与所述基板110配合形成用于容纳所述电极引线层124的容纳腔。在所述器件区112上沉积有机材料层时,所述电极引线层124容纳在所述容纳腔内,所述容纳腔上方的掩膜板为所述电极引线层124提供屏蔽,防止有机材料沉积于所述电极引线层124上,并且由于所述第二开口224的深度大于所述电极引线层124的厚度,在所述台阶面223与所述电极引线层124之间存在间隙,从而使得所述电极引线层124不会被所述掩膜板220蹭伤。所述有机材料层可通过所述第一开口222沉积于所述器件区112内。The present invention can provide the second opening 224 and the stepped surface 223, so that the stepped surface 223 can be made when the masking plate 220 is in contact with the substrate 110 through a surface on which the second opening 224 is disposed. The substrate 110 cooperates to form a receiving cavity for accommodating the electrode lead layer 124. When an organic material layer is deposited on the device region 112, the electrode lead layer 124 is housed in the receiving cavity, and a mask plate above the receiving cavity provides shielding for the electrode lead layer 124 to prevent deposition of organic materials. On the electrode lead layer 124, and because the depth of the second opening 224 is greater than the thickness of the electrode lead layer 124, there is a gap between the step surface 223 and the electrode lead layer 124, thereby The electrode lead layer 124 is not scratched by the mask 220. The organic material layer may be deposited in the device region 112 through the first opening 222.
优选地,所述第二开口224的深度等于或小于所述掩膜板220厚度的1/2,此时,不仅可以保证在沉积所述有机材料层时,所述有机材料层不会通过所述台阶面223与所述电极引线层124之间的间隙沉积到所述电极引线层124上,而且可以保证所述掩膜板220在所述台阶面223处有足够的厚度(例如,等于所述第一开口222的深度)而不会在所述掩膜板220使用过程中发生形变而蹭伤所述电极引线层124。Preferably, the depth of the second opening 224 is equal to or less than 1/2 of the thickness of the mask 220. At this time, it is ensured that the organic material layer does not pass through when depositing the organic material layer. A gap between the stepped surface 223 and the electrode lead layer 124 is deposited on the electrode lead layer 124, and it is ensured that the mask 220 has a sufficient thickness at the stepped surface 223 (for example, equal to The depth of the first opening 222 is not affected by the deformation of the mask 220 during use to damage the electrode lead layer 124.
所述台阶面223的形状可以与所述电极引线区124的形状相匹配,以便于覆盖所述电极引线区124。所述台阶面223的尺寸可以与所述电极引线区124的尺寸相同,使得所述台阶面223既能够覆盖所述电极引线区124,又能够使得所 述第二开口224区域尽可能小,以保证所述掩膜板220不易发生变形。The shape of the stepped surface 223 may match the shape of the electrode lead region 124 to cover the electrode lead region 124. The stepped surface 223 may have the same size as the electrode lead region 124 such that the stepped surface 223 can cover both the electrode lead region 124 and the second opening 224 region as small as possible. It is ensured that the mask 220 is not easily deformed.
在其中一个实施例中,器件区112相对的两侧分别设置有电极引线区114,第二开口224与第一开口222在所述器件区112相对的两侧分别形成所述台阶面223。两个所述台阶面223分别与两个所述电极引线区114对应,用于对这两个电极引线区114进行保护。In one embodiment, the opposite sides of the device region 112 are respectively provided with electrode lead regions 114, and the second openings 224 and the first openings 222 respectively form the step faces 223 on opposite sides of the device region 112. Two of the step faces 223 correspond to the two electrode lead regions 114, respectively, for protecting the two electrode lead regions 114.
请参阅图3和图4,在其中一个实施例中,基板上设置有多个器件区,每个器件区的至少一侧均设置有电极引线区。掩膜板220沿其厚度方向可设置有多个相互连通的第一开口222和第二开口224。此时,可使得所述有机材料层同时沉积于多个器件区上,从而大大提高了OLED器件的制备效率。Referring to FIG. 3 and FIG. 4, in one embodiment, a plurality of device regions are disposed on the substrate, and at least one side of each device region is provided with an electrode lead region. The mask 220 may be provided with a plurality of first openings 222 and second openings 224 that communicate with each other along its thickness direction. At this time, the organic material layer can be simultaneously deposited on a plurality of device regions, thereby greatly improving the preparation efficiency of the OLED device.
在其中一个实施例中,所述台阶面用于与所述基板形成用于容纳所述电极引线层的容纳腔。In one of the embodiments, the stepped surface is for forming a receiving cavity for receiving the electrode lead layer with the substrate.
在其中一个实施例中,所述掩膜板设置有所述第二开口的一面用于与所述基板接触,沉积材料通过所述第一开口沉积于所述器件区内。In one embodiment, the mask is provided with one side of the second opening for contacting the substrate, and a deposition material is deposited in the device region through the first opening.
可以理解,掩膜板220不仅仅适用于所述有机材料层的制备,也适用于其他只设置于所述器件区112而不设置于所述电极引线区114的膜层的制备。It can be understood that the mask 220 is not only suitable for the preparation of the organic material layer, but also for the preparation of other film layers which are only disposed in the device region 112 and are not disposed in the electrode lead region 114.
本发明提供的掩膜板,在制备OLED器件的膜层时,可以避免基板上已设有的其他图型层被蹭伤,从而大大提高了OLED器件的良率。The mask provided by the invention can avoid the bruising of other pattern layers already provided on the substrate when preparing the film layer of the OLED device, thereby greatly improving the yield of the OLED device.
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-described embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be considered as the scope of this manual.
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above-described embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims (8)

  1. 一种掩膜板,用于基板上OLED器件的制备,所述基板上设置有器件区和设置于所述器件区至少一侧的电极引线区,所述器件区用于形成所述OLED器件,所述电极引线区用于形成与所述OLED器件的电极电连接的电极引线层,其特征在于,A mask for preparing an OLED device on a substrate, the substrate being provided with a device region and an electrode lead region disposed on at least one side of the device region, wherein the device region is used to form the OLED device, The electrode lead region is for forming an electrode lead layer electrically connected to an electrode of the OLED device, characterized in that
    所述掩膜板沿其厚度方向设置有相互连通的第一开口和第二开口,所述第一开口与所述器件区相对应,所述第二开口的面积大于所述第一开口且覆盖所述第一开口,所述第二开口与所述第一开口配合形成台阶面,所述台阶面能够覆盖所述电极引线区,所述第二开口的深度大于所述电极引线层的厚度。The mask plate is provided with a first opening and a second opening communicating with each other along a thickness direction thereof, the first opening corresponding to the device region, and the second opening has an area larger than the first opening and covering The first opening, the second opening cooperates with the first opening to form a stepped surface, the stepped surface can cover the electrode lead region, and the second opening has a depth greater than a thickness of the electrode lead layer.
  2. 根据权利要求1所述的掩膜板,其特征在于,所述第一开口的深度等于或小于所述掩膜板厚度的二分之一。The mask according to claim 1, wherein the depth of the first opening is equal to or less than one-half of the thickness of the mask.
  3. 根据权利要求1所述的掩膜板,其特征在于,所述台阶面的形状与所述电极引线区的形状相同。The mask according to claim 1, wherein the shape of the stepped surface is the same as the shape of the electrode lead region.
  4. 根据权利要求3所述的掩膜板,其特征在于,所述台阶面的尺寸与所述电极引线区的尺寸相同。The mask according to claim 3, wherein the stepped surface has the same size as the electrode lead region.
  5. 根据权利要求1所述的掩膜板,其特征在于,所述器件区相对的两侧分别设置有所述电极引线区,所述第二开口与所述第一开口在所述相对的两侧分别形成所述台阶面。The mask according to claim 1, wherein the opposite sides of the device region are respectively provided with the electrode lead regions, and the second openings and the first openings are on opposite sides The step faces are formed separately.
  6. 根据权利要求1所述的掩膜板,其特征在于,所述基板上设置有多个所述器件区,每一所述器件区的至少一侧均设置有所述电极引线区,所述掩膜板上设置有多个相互连通的所述第一开口和第二开口。The mask according to claim 1, wherein a plurality of the device regions are disposed on the substrate, and at least one side of each of the device regions is provided with the electrode lead region, the mask The film plate is provided with a plurality of the first openings and the second openings that communicate with each other.
  7. 根据权利要求1所述的掩膜板,其特征在于,所述台阶面用于与所述基板形成用于容纳所述电极引线层的容纳腔。The mask according to claim 1, wherein the stepped surface is for forming a receiving cavity for accommodating the electrode lead layer with the substrate.
  8. 根据权利要求1所述的掩膜板,其特征在于,所述掩膜板设置有所述第二开口的一面用于与所述基板接触。The mask according to claim 1, wherein the mask is provided with one side of the second opening for contacting the substrate.
PCT/CN2018/084521 2017-07-28 2018-04-25 Mask WO2019019728A1 (en)

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CN106637074A (en) * 2017-01-09 2017-05-10 昆山国显光电有限公司 Evaporation mask plate, organic light-emitting diode (OLED) substrate and method for measuring evaporated pixel deviation
CN207009484U (en) * 2017-07-28 2018-02-13 昆山维信诺科技有限公司 Mask plate

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CN103205687A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 Vapor plating mask plate and production method thereof
CN106381464A (en) * 2015-07-28 2017-02-08 昆山国显光电有限公司 General metal mask plate and manufacturing method thereof
US20170104185A1 (en) * 2015-10-09 2017-04-13 Japan Display Inc. Film forming mask, film forming method and method for manufacturing display device
CN106637074A (en) * 2017-01-09 2017-05-10 昆山国显光电有限公司 Evaporation mask plate, organic light-emitting diode (OLED) substrate and method for measuring evaporated pixel deviation
CN207009484U (en) * 2017-07-28 2018-02-13 昆山维信诺科技有限公司 Mask plate

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