WO2019003671A1 - Aggregate substrate - Google Patents

Aggregate substrate Download PDF

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Publication number
WO2019003671A1
WO2019003671A1 PCT/JP2018/018560 JP2018018560W WO2019003671A1 WO 2019003671 A1 WO2019003671 A1 WO 2019003671A1 JP 2018018560 W JP2018018560 W JP 2018018560W WO 2019003671 A1 WO2019003671 A1 WO 2019003671A1
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WIPO (PCT)
Prior art keywords
rfic
substrate
collective substrate
child
area
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PCT/JP2018/018560
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French (fr)
Japanese (ja)
Inventor
政明 金尾
佐々木 純
知大 古村
亜伊 宮林
勝己 谷口
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株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to CN201890000826.XU priority Critical patent/CN211352582U/en
Publication of WO2019003671A1 publication Critical patent/WO2019003671A1/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits

Definitions

  • the present invention relates to a collective substrate having a plurality of child substrate areas, and more particularly to a collective substrate provided with an RFIC chip on which information on the collective substrate is recorded.
  • a manufacturing method is generally used such as manufacturing in a collective substrate state having a plurality of child substrates and separating each child substrate at the final stage. Identification information is given to the RFIC chip and it is being used in the manufacturing process.
  • Patent Document 1 discloses that a loop portion is formed on an edge conductor pattern of a collective substrate, and an RFIC chip is mounted on the loop portion.
  • the structure of the collective substrate shown in Patent Document 1 has an advantage that the RFIC chip can be provided without substantially affecting the plurality of child substrate regions.
  • an object of the present invention is to provide a collective substrate in which the connection portion of the RFIC or the RFIC itself is not easily damaged in the manufacturing process.
  • the collective substrate of the present invention is A collective substrate having a plurality of child substrate areas and an outer edge, and separating the plurality of child substrate areas to form a plurality of child substrates, An RFIC in which information on the collective substrate is recorded;
  • the RFIC is provided in an area surrounding the plurality of child substrate areas on the side along the outer edge, It is characterized by
  • the stress applied to the RFIC is alleviated, and damage in the manufacturing process of the connection portion of the RFIC or the RFIC itself is prevented.
  • the RFIC be provided inside a minimum range surrounding all the child substrate regions in plan view. Since the plurality of child substrate areas is originally an area spaced inwardly from the edge of the collective substrate, the inside of the minimum range surrounding all the child substrate areas in plan view is thus from the edge of the collective substrate It is an inward stressed area. By providing the RFIC chip in this region, the stress applied to the RFIC is relaxed, and breakage in the manufacturing process of the connection portion of the RFIC or the RFIC itself is prevented.
  • region in which said RFIC was provided is an area
  • the RFIC is preferably incorporated in the thickness direction of the collective substrate. According to this structure, the RFIC is protected by the base of the collective substrate, the stress applied to the RFIC is relieved, and the breakage of the connection portion of the RFIC or the manufacturing process of the RFIC itself is prevented.
  • the radiator may be a conductor pattern formed on an edge of the collective substrate, the radiator being connected to the RFIC, the radiator being outside the region where the RFIC is provided. According to this structure, the stress applied to the connection portion of the RFIC or the RFIC itself is suppressed, and the edge of the collective substrate is effectively used.
  • the present invention it is possible to obtain a collective substrate in which the connection portion of the RFIC or the RFIC itself is not easily damaged in the manufacturing process.
  • FIG. 1 is a perspective view of a collective substrate 10 according to the first embodiment.
  • FIG. 2 is a plan view of the RFIC placement area 9.
  • FIG. 3A is a cross-sectional view of a plurality of base materials of the collective substrate 10 before lamination.
  • FIG. 3B is a cross-sectional view of the plurality of substrates of the collective substrate 10 after lamination.
  • FIG. 4 is a cross-sectional view across the entire width of the collective substrate 10.
  • FIG. 5 is a circuit diagram of the RFIC 20.
  • FIGS. 7A and 7B are plan views showing the relationship between the area surrounding a plurality of child substrate areas and the RFIC arrangement area 9 in the collective substrate 10 according to the second embodiment.
  • 8A and 8B are plan views of the collective substrate 10 according to the third embodiment.
  • FIG. 1 is a perspective view of a collective substrate 10 according to the first embodiment.
  • the collective substrate 10 has a plurality of child substrate areas 11 arranged in a lattice.
  • the collective substrate 10 has a multilayer structure formed by laminating thermoplastic resin layers such as LCP (Liquid Crystal Polymer) and TPI (thermoplastic polyimide). Each thermoplastic resin layer is flexible, and the collective substrate 10 is flexible.
  • a plurality of sub-substrate regions 11 are separated from the collective substrate 10 by cutting the region indicated by the two-dot chain line in FIG. That is, a plurality of child substrates are obtained.
  • the collective substrate 10 includes an RFIC placement area 9 where the RFIC is placed, in addition to the daughter board area 11.
  • the RFIC placement area 9 has the same size as the child substrate area 11, and corresponds to one of the vertical and horizontal arrangement positions of the plurality of child substrate areas.
  • FIG. 2 is a plan view of the RFIC placement area 9.
  • a planar conductor 15 is formed in the RFIC placement area 9. Further, an opening 15AP is formed in a part of the planar conductor 15, and a slit 15SL connecting the opening 15AP and the outer edge is formed.
  • the RFIC 20 is electrically connected to straddle the slit 15SL.
  • Various information on manufacturing of the collective substrate 10 is recorded in the RFIC 20.
  • the planar conductor 15 acts as a radiator of a communication circuit using the RFIC 20. That is, the RF IC 20 and the planar conductor 15 constitute an RFID tag.
  • FIG. 3A is a cross-sectional view of a plurality of base materials of the collective substrate 10 before lamination.
  • FIG. 3 (B) is a cross-sectional view after lamination.
  • the collective substrate 10 has a structure in which a plurality of thermoplastic resin layers including thermoplastic resin layers 10A, 10B, 10C, 10D, 10E and 10F are stacked.
  • a cavity 14 is formed in the thermoplastic resin layers 10B and 10C, and the RFIC 20 is embedded in the cavity 14.
  • a planar conductor 15 is formed on the top surface of the thermoplastic resin layer 10A, and a via conductor 13 is formed inside the thermoplastic resin layer 10A.
  • the RFIC 20 is packaged including the IC chip 24 and the circuit pattern 22.
  • the RFIC 20 has a structure in which an IC chip 24 is mounted on the surface of a substrate 21.
  • a protective layer 25 is formed around the IC chip 24.
  • the base 21 is a laminate of the thermoplastic resin layer of the collective substrate 10 and a thermoplastic resin layer of the same material.
  • the circuit pattern 22 is formed inside the base 21, and the terminal electrode 23 is formed on the upper surface of the base 21.
  • the circuit pattern 22 includes an inductor or a capacitor with an in-plane conductor pattern, an interlayer conductor pattern, or the like.
  • the circuit pattern 22 includes a resonant circuit having a predetermined resonant frequency, and constitutes a wide band matching circuit capable of impedance matching in a wide band.
  • thermoplastic resin layers 10A to 10F are thermocompression-bonded between adjacent layers. Further, the resin layers 10A and 10B and the base 21 of the RFIC 20 are thermocompression-bonded, and the resin layers 10C and 10D and the protective layer 25 of the RFIC 20 are thermocompression-bonded. Furthermore, the via conductor 13 conducts to the terminal electrode 23 of the RFIC 20.
  • the temperature at the time of the said thermocompression bonding is 300 degreeC, for example.
  • FIG. 4 is a cross-sectional view across the entire width of the collective substrate 10.
  • the RFIC placement area 9 is located between the two subsidiary substrate areas 11 in plan view. Since the circuit pattern 32 is formed in the daughter substrate region 11, the average hardness of the daughter substrate region 11 is harder than the thermoplastic resin layer alone of the collective substrate 10. Therefore, according to this structure, the stress applied to the RFIC 20 is further relieved, and breakage of the connection portion of the RFIC 20 or the RFIC 20 itself in the manufacturing process is effectively prevented.
  • FIG. 5 is a circuit diagram of the RFIC 20. As shown in FIG. In the RFIC 20, as illustrated in FIG. 5, a matching circuit including inductors L1 and L2 and capacitors C1 and C2 is formed between the IC chip 24 and the terminal electrode 23. Inductor L1 is inserted between one terminal of IC chip 24 and one terminal electrode 23, and inductor L2 is inserted between one terminal and the other terminal of IC chip 24 (in the example of FIG. 5, inductor L2 is , Inserted between the one terminal and the other terminal of the IC chip 24 via the inductor L1). The inductor L1 and the inductor L2 are coupled via the magnetic field M.
  • Capacitor C1 is inserted between one terminal of IC chip 24 and one terminal electrode 23 (in the example of FIG. 5, capacitor C1 is one terminal of IC chip 24 and one terminal electrode 23 via inductor L1. Inserted between).
  • the capacitor C 2 is inserted between the other terminal of the IC chip 24 and the other terminal electrode 23.
  • a feed circuit having a plurality of resonance frequencies is constituted by these capacitors and inductors, and a wide band can be realized.
  • the resonant frequency of the resonant circuit substantially corresponds to the communication frequency of the wireless communication device.
  • FIG. 6 is a perspective view of another collective substrate 10 according to the first embodiment.
  • the RFIC placement area 9 is provided at an angular position among the vertical and horizontal arrangement positions of the plurality of child substrate areas.
  • the RFIC placement area 9 may be an area spaced inward from the edge of the collective substrate 10.
  • the RFIC placement area 9 may be provided at an internal position such as the center among the arrangement positions of the plurality of sub substrate areas in the vertical and horizontal directions.
  • the stress applied to the RFIC 20 is relieved, and the breakage of the connection portion of the RFIC or the manufacturing process of the RFIC itself is prevented.
  • Second Embodiment In the second embodiment, several relationships between a plurality of child substrate areas and an RFIC arrangement area are shown. In addition, an example in which the RFIC placement area has a size different from that of the child substrate area will be described.
  • FIGS. 7A and 7B are plan views showing the relationship between the area surrounding a plurality of child substrate areas and the RFIC arrangement area 9 in the collective substrate 10 according to the second embodiment.
  • a surrounding region CR1 indicated by a two-dot chain line is a rectangular region surrounding a plurality of sub substrate regions 11 by the side along the outer edge of the collective substrate 10.
  • the RFIC placement area 9 is provided in the surrounding area CR1 and at a position other than the daughter board area 11.
  • the encircled area CR2 indicated by a two-dot chain line is a minimum area surrounding all the child substrate areas 11 in a plan view.
  • the RFIC placement area 9 is provided in the surrounding area CR2 and at a position other than the daughter board area 11.
  • the RFIC placement area 9 is provided in the surrounding area CR1 which is an area surrounding the plurality of sub substrate areas 11 by the side along the outer edge of the collective substrate 10, the stress applied to the RFIC is relaxed and the connection of the RFIC Damage in the manufacturing process of parts or the RFIC itself is prevented.
  • the RFIC placement area 9 is provided in the enclosing area CR2 which is the minimum area surrounding all the child substrate areas 11 in plan view, the stress applied to the RFIC is further relieved, and the manufacturing process of the connection part of RFIC or RFIC itself The damage prevention effect at
  • the third embodiment shows an example in which the radiator connected to the RFIC is outside the RFIC arrangement area.
  • FIGS. 8A and 8B are plan views of the collective substrate 10 according to the third embodiment.
  • the collective substrate 10 includes a plurality of (eight) daughter substrate areas 11 and one RFIC arrangement area 9. Further, an edge conductor pattern 12 is formed at the edge of the collective substrate 10. Furthermore, the planar conductor 15 continuous from the edge conductor pattern 12 is intruding into the RFIC placement area 9.
  • an opening 15AP is formed in the planar conductor 15 in the RFIC placement area 9. Further, in the planar conductor 15, a slit 15 ⁇ / b> SL connecting the opening 15 AP and the inside of the RFIC arrangement region 9 is formed. The RFIC 20 is electrically connected to straddle the slit 15SL.
  • the planar conductor 15 in the RFIC placement area 9 is formed with an opening 15AP and a slit 15SL connecting the opening 15AP and the outer edge.
  • the RFIC 20 is electrically connected to straddle the slit 15SL.
  • the edge conductor pattern 12 mainly functions as a radiator, and the planar conductor 15 formed in the opening 15AP and the slit 15SL is mainly used as an impedance matching portion for matching the impedance of the RFIC 20 and the edge conductor pattern 12 Works.
  • the RFIC 20 is disposed inside the edge of the collective substrate 10, the stress applied to the connection portion of the RFIC 20 or the RFIC 20 itself is suppressed.
  • the edge conductor pattern 12 formed at the edge of the collective substrate 10 is effectively used as a radiator to obtain high communication characteristics.
  • the edge conductor pattern 12 is not limited to a loop, and may be, for example, a dipole radiator.
  • C1, C2 Capacitors CR1, CR2: Enclosure region L1, L2: Inductor 9: RFIC arrangement region 10: Aggregate substrate 10A, 10B, 10C, 10D, 10E, 10F: Thermoplastic resin layer 11: Child substrate region 12: Edge portion Conductor pattern 13 ... via conductor 14 ... cavity 15 ... planar conductor 15AP ... opening 15SL ... slit 20 ... RFIC 21 Base material 22 Circuit pattern 23 Terminal electrode 24 IC chip 25 Protective layer 32 Circuit pattern

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

This aggregate substrate (10) has a plurality of slave substrate regions (11), and a plurality of slave substrates are formed by separating the plurality of slave substrate regions (11). An RFIC arrangement region (9) is provided in a region that surrounds, with sides along outer edges of the aggregate substrate (10), the plurality of slave substrate regions (11). An RFIC in which information pertaining to the aggregate substrate (10) is recorded is mounted in the RFIC arrangement region (9). According to this structure, an aggregate substrate is configured in which a connection part of the RFIC or the RFIC itself is not easily damaged during a manufacturing process.

Description

集合基板Assembly substrate
 本発明は、複数の子基板領域を有する集合基板に関し、特に、集合基板に関する情報が記録されたRFICチップを備える集合基板に関する。 The present invention relates to a collective substrate having a plurality of child substrate areas, and more particularly to a collective substrate provided with an RFIC chip on which information on the collective substrate is recorded.
 所定の回路が構成される基板を製造する際、複数の子基板を有する集合基板状態で製造し、最終段階で各子基板を分離する、といった製造方法が一般的であるが、この集合基板について識別情報をRFICチップに付与し、これを製造過程で利用することが進められている。 When manufacturing a substrate on which a predetermined circuit is to be manufactured, a manufacturing method is generally used such as manufacturing in a collective substrate state having a plurality of child substrates and separating each child substrate at the final stage. Identification information is given to the RFIC chip and it is being used in the manufacturing process.
 例えば特許文献1には、集合基板の縁部導体パターンにループ部を形成し、このループ部にRFICチップを搭載することが示されている。 For example, Patent Document 1 discloses that a loop portion is formed on an edge conductor pattern of a collective substrate, and an RFIC chip is mounted on the loop portion.
国際公開第2016/060073号International Publication No. 2016/060073
 特許文献1に示されている集合基板の構造には、複数の子基板領域に実質的な影響を与えずにRFICチップを設けることができる利点がある。 The structure of the collective substrate shown in Patent Document 1 has an advantage that the RFIC chip can be provided without substantially affecting the plurality of child substrate regions.
 しかし、集合基板の縁部に比較的大きなチップ部品を搭載することは集合基板の製造プロセス上の難易度が高い。また、集合基板の縁部には応力が掛かりやすいので、チップ部品の接続部またはチップ部品自体が製造過程で破損しやすい。 However, mounting a relatively large chip component at the edge of the collective substrate is highly difficult in the manufacturing process of the collective substrate. Further, since stress is easily applied to the edge of the collective substrate, the connection part of the chip part or the chip part itself is easily damaged in the manufacturing process.
 そこで、本発明の目的は、RFICの接続部またはRFIC自体が製造過程で破損し難い集合基板を提供することにある。 Therefore, an object of the present invention is to provide a collective substrate in which the connection portion of the RFIC or the RFIC itself is not easily damaged in the manufacturing process.
(1)本発明の集合基板は、
 複数の子基板領域および外縁を有し、これら複数の子基板領域を分離することで複数の子基板を形成する集合基板であって、
 前記集合基板に関する情報が記録されたRFICを備え、
 前記RFICは、前記外縁に沿った辺で前記複数の子基板領域を囲む領域内に設けられた、
 ことを特徴とする。
(1) The collective substrate of the present invention is
A collective substrate having a plurality of child substrate areas and an outer edge, and separating the plurality of child substrate areas to form a plurality of child substrates,
An RFIC in which information on the collective substrate is recorded;
The RFIC is provided in an area surrounding the plurality of child substrate areas on the side along the outer edge,
It is characterized by
 上記構成により、RFICに掛かる応力が緩和され、RFICの接続部またはRFIC自体の製造過程での破損が防止される。 According to the above configuration, the stress applied to the RFIC is alleviated, and damage in the manufacturing process of the connection portion of the RFIC or the RFIC itself is prevented.
(2)前記RFICは、平面視で全ての前記子基板領域を取り囲む最小範囲の内側に設けられていることが好ましい。複数の子基板領域は本来的に集合基板の縁部から内側に離れた領域であるので、このように、平面視で全ての子基板領域を取り囲む最小範囲の内側は、集合基板の縁部から内側に離れた、応力の掛かりにくい領域である。この領域にRFICチップを設けることで、RFICに掛かる応力が緩和され、RFICの接続部またはRFIC自体の製造過程での破損が防止される。 (2) It is preferable that the RFIC be provided inside a minimum range surrounding all the child substrate regions in plan view. Since the plurality of child substrate areas is originally an area spaced inwardly from the edge of the collective substrate, the inside of the minimum range surrounding all the child substrate areas in plan view is thus from the edge of the collective substrate It is an inward stressed area. By providing the RFIC chip in this region, the stress applied to the RFIC is relaxed, and breakage in the manufacturing process of the connection portion of the RFIC or the RFIC itself is prevented.
(3)前記RFICが設けられた領域は、前記複数の子基板領域のうち、二つの子基板領域で挟まれる領域である、ことが好ましい。この構造によれば、RFICに掛かる応力がより緩和され、RFICの接続部またはRFIC自体の製造過程での破損が効果的に防止される。 (3) It is preferable that the area | region in which said RFIC was provided is an area | region pinched | interposed by two child board | substrate area | regions among said some child board | substrate area | regions. According to this structure, the stress applied to the RFIC is further alleviated, and the breakage of the connection portion of the RFIC or the manufacturing process of the RFIC itself is effectively prevented.
(4)前記RFICは前記集合基板の厚み方向の内部に内蔵されていることが好ましい。この構造によれば、RFICが集合基板の基材で保護され、RFICに掛かる応力が緩和され、RFICの接続部またはRFIC自体の製造過程での破損が防止される。 (4) The RFIC is preferably incorporated in the thickness direction of the collective substrate. According to this structure, the RFIC is protected by the base of the collective substrate, the stress applied to the RFIC is relieved, and the breakage of the connection portion of the RFIC or the manufacturing process of the RFIC itself is prevented.
(5)前記RFICに接続される放射体を備え、当該放射体は前記RFICが設けられた領域外である、前記集合基板の縁部に形成された導体パターンであってもよい。この構造によれば、RFICの接続部またはRFIC自体へ加わる応力が抑制され、且つ集合基板の縁部が有効に利用される。 (5) The radiator may be a conductor pattern formed on an edge of the collective substrate, the radiator being connected to the RFIC, the radiator being outside the region where the RFIC is provided. According to this structure, the stress applied to the connection portion of the RFIC or the RFIC itself is suppressed, and the edge of the collective substrate is effectively used.
 本発明によれば、RFICの接続部またはRFIC自体が製造過程で破損し難い集合基板が得られる。 According to the present invention, it is possible to obtain a collective substrate in which the connection portion of the RFIC or the RFIC itself is not easily damaged in the manufacturing process.
図1は第1の実施形態に係る集合基板10の斜視図である。FIG. 1 is a perspective view of a collective substrate 10 according to the first embodiment. 図2はRFIC配置領域9の平面図である。FIG. 2 is a plan view of the RFIC placement area 9. 図3(A)は集合基板10の複数の基材の積層前の断面図である。図3(B)は集合基板10の複数の基材の積層後の断面図である。FIG. 3A is a cross-sectional view of a plurality of base materials of the collective substrate 10 before lamination. FIG. 3B is a cross-sectional view of the plurality of substrates of the collective substrate 10 after lamination. 図4は集合基板10の全幅に亘る断面図である。FIG. 4 is a cross-sectional view across the entire width of the collective substrate 10. 図5はRFIC20の回路図である。FIG. 5 is a circuit diagram of the RFIC 20. As shown in FIG. 図6は第1の実施形態に係る別の集合基板10の斜視図である。FIG. 6 is a perspective view of another collective substrate 10 according to the first embodiment. 図7(A)、図7(B)は、第2の実施形態に係る集合基板10の、複数の子基板領域を囲む領域とRFIC配置領域9との関係を示す平面図である。FIGS. 7A and 7B are plan views showing the relationship between the area surrounding a plurality of child substrate areas and the RFIC arrangement area 9 in the collective substrate 10 according to the second embodiment. 図8(A)、図8(B)は第3の実施形態に係る集合基板10の平面図である。8A and 8B are plan views of the collective substrate 10 according to the third embodiment.
 以降、図を参照して幾つかの具体的な例を挙げて、本発明を実施するための複数の形態を示す。各図中には同一箇所に同一符号を付す。第2の実施形態以降では第1の実施形態と共通の事柄についての記述を省略し、異なる点について説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。 Hereinafter, some specific examples will be described with reference to the drawings to show a plurality of modes for carrying out the present invention. The same reference numerals are given to the same parts in each figure. In the second and subsequent embodiments, descriptions of matters in common with the first embodiment will be omitted, and different points will be described. In particular, the same operation and effect by the same configuration will not be sequentially referred to in each embodiment.
《第1の実施形態》
 図1は第1の実施形態に係る集合基板10の斜視図である。集合基板10は、格子状に配された複数の子基板領域11を有する。集合基板10はLCP(Liquid Crystal Polymer)やTPI(熱可塑性ポリイミド)等の熱可塑性樹脂層を積層してなる多層構造を有する。各熱可塑性樹脂層は可撓性を有し、集合基板10は可撓性を有する。この集合基板10から、図1中の二点鎖線で示す領域を切断することで、複数の子基板領域11を分離する。すなわち複数の子基板を得る。
First Embodiment
FIG. 1 is a perspective view of a collective substrate 10 according to the first embodiment. The collective substrate 10 has a plurality of child substrate areas 11 arranged in a lattice. The collective substrate 10 has a multilayer structure formed by laminating thermoplastic resin layers such as LCP (Liquid Crystal Polymer) and TPI (thermoplastic polyimide). Each thermoplastic resin layer is flexible, and the collective substrate 10 is flexible. A plurality of sub-substrate regions 11 are separated from the collective substrate 10 by cutting the region indicated by the two-dot chain line in FIG. That is, a plurality of child substrates are obtained.
 集合基板10は、子基板領域11以外に、RFICを配置するRFIC配置領域9を備える。本実施形態では、RFIC配置領域9は子基板領域11と同サイズであり、且つ、複数の子基板領域の縦横の配列位置の一つの位置に相当している。 The collective substrate 10 includes an RFIC placement area 9 where the RFIC is placed, in addition to the daughter board area 11. In the present embodiment, the RFIC placement area 9 has the same size as the child substrate area 11, and corresponds to one of the vertical and horizontal arrangement positions of the plurality of child substrate areas.
 図2はRFIC配置領域9の平面図である。このRFIC配置領域9には面状導体15が形成されている。また、この面状導体15の一部に開口15APが形成されていて、この開口15APと外縁との間を連接するスリット15SLが形成されている。そして、このスリット15SLを跨ぐようにRFIC20が電気的に接続されている。このRFIC20には、集合基板10に関する製造上の各種情報が記録される。 FIG. 2 is a plan view of the RFIC placement area 9. A planar conductor 15 is formed in the RFIC placement area 9. Further, an opening 15AP is formed in a part of the planar conductor 15, and a slit 15SL connecting the opening 15AP and the outer edge is formed. The RFIC 20 is electrically connected to straddle the slit 15SL. Various information on manufacturing of the collective substrate 10 is recorded in the RFIC 20.
 図2中の面状導体15の縁に沿った矢印は、面状導体パターンに流れる電流の概略経路を示している。面状導体15はRFIC20を用いた通信回路の放射体として作用する。すなわち、RFIC20と面状導体15とでRFIDタグが構成される。 Arrows along the edge of the planar conductor 15 in FIG. 2 indicate a schematic path of current flowing in the planar conductor pattern. The planar conductor 15 acts as a radiator of a communication circuit using the RFIC 20. That is, the RF IC 20 and the planar conductor 15 constitute an RFID tag.
 図3(A)は集合基板10の複数の基材の積層前の断面図である。図3(B)は積層後の断面図である。 FIG. 3A is a cross-sectional view of a plurality of base materials of the collective substrate 10 before lamination. FIG. 3 (B) is a cross-sectional view after lamination.
 集合基板10は、熱可塑性樹脂層10A,10B,10C,10D,10E,10Fを含む複数の熱可塑性樹脂層が積層された構造である。熱可塑性樹脂層10B,10Cにキャビティ14が形成されていて、このキャビティ14内にRFIC20が埋設される。 The collective substrate 10 has a structure in which a plurality of thermoplastic resin layers including thermoplastic resin layers 10A, 10B, 10C, 10D, 10E and 10F are stacked. A cavity 14 is formed in the thermoplastic resin layers 10B and 10C, and the RFIC 20 is embedded in the cavity 14.
 熱可塑性樹脂層10Aの上面には、面状導体15が形成されていて、熱可塑性樹脂層10Aの内部にビア導体13が形成されている。 A planar conductor 15 is formed on the top surface of the thermoplastic resin layer 10A, and a via conductor 13 is formed inside the thermoplastic resin layer 10A.
 RFIC20は、ICチップ24と回路パターン22を含んでパッケージングされたものである。RFIC20は基材21の表面にICチップ24が搭載された構造を有する。ICチップ24の周囲には保護層25が形成される。 The RFIC 20 is packaged including the IC chip 24 and the circuit pattern 22. The RFIC 20 has a structure in which an IC chip 24 is mounted on the surface of a substrate 21. A protective layer 25 is formed around the IC chip 24.
 基材21は、集合基板10の熱可塑性樹脂層と同種材料の熱可塑性樹脂層の積層体である。基材21の内部に回路パターン22が形成されていて、基材21の上面に端子電極23が形成されている。回路パターン22は、面内導体パターンや層間導体パターン等によるインダクタまたはキャパシタを含む。この回路パターン22は、所定の共振周波数を持った共振回路を含み、広帯域でインピーダンス整合が可能な広帯域整合回路を構成している。 The base 21 is a laminate of the thermoplastic resin layer of the collective substrate 10 and a thermoplastic resin layer of the same material. The circuit pattern 22 is formed inside the base 21, and the terminal electrode 23 is formed on the upper surface of the base 21. The circuit pattern 22 includes an inductor or a capacitor with an in-plane conductor pattern, an interlayer conductor pattern, or the like. The circuit pattern 22 includes a resonant circuit having a predetermined resonant frequency, and constitutes a wide band matching circuit capable of impedance matching in a wide band.
 熱可塑性樹脂層10A~10Fと共にRFIC20を積層し、加熱加圧することにより、図3(B)に示すように、熱可塑性樹脂層10A~10Fは、隣接する層間が熱圧着される。また、樹脂層10A,10BとRFIC20の基材21とが熱圧着され、樹脂層10C,10DとRFIC20の保護層25とが熱圧着される。さらに、ビア導体13はRFIC20の端子電極23に導通する。上記熱圧着時の温度は例えば300℃である。 By laminating the RFIC 20 together with the thermoplastic resin layers 10A to 10F and heating and pressing them, as shown in FIG. 3B, the thermoplastic resin layers 10A to 10F are thermocompression-bonded between adjacent layers. Further, the resin layers 10A and 10B and the base 21 of the RFIC 20 are thermocompression-bonded, and the resin layers 10C and 10D and the protective layer 25 of the RFIC 20 are thermocompression-bonded. Furthermore, the via conductor 13 conducts to the terminal electrode 23 of the RFIC 20. The temperature at the time of the said thermocompression bonding is 300 degreeC, for example.
 図4は集合基板10の全幅に亘る断面図である。本実施形態では、RFIC配置領域9は平面視で、二つの子基板領域11の間に挟まれる位置にある。子基板領域11には回路パターン32が形成されているため、子基板領域11の平均的な硬さは集合基板10の熱可塑性樹脂層単体より硬い。そのため、この構造によれば、RFIC20に掛かる応力がより緩和され、RFIC20の接続部またはRFIC20自体の、製造過程での破損が効果的に防止される。 FIG. 4 is a cross-sectional view across the entire width of the collective substrate 10. In the present embodiment, the RFIC placement area 9 is located between the two subsidiary substrate areas 11 in plan view. Since the circuit pattern 32 is formed in the daughter substrate region 11, the average hardness of the daughter substrate region 11 is harder than the thermoplastic resin layer alone of the collective substrate 10. Therefore, according to this structure, the stress applied to the RFIC 20 is further relieved, and breakage of the connection portion of the RFIC 20 or the RFIC 20 itself in the manufacturing process is effectively prevented.
 図5はRFIC20の回路図である。RFIC20は、図5に表れるように、ICチップ24と端子電極23との間に、インダクタL1,L2、およびキャパシタC1,C2を含む整合回路が形成される。インダクタL1はICチップ24の一方端子と一方端子電極23との間に挿入され、インダクタL2はICチップ24の一方端子と他方端子との間に挿入される(図5の例では、インダクタL2は、インダクタL1を介してICチップ24の一方端子と他方端子との間に挿入される。)。インダクタL1とインダクタL2は磁界Mを介して結合する。キャパシタC1はICチップ24の一方端子と一方端子電極23との間に挿入される(図5の例では、キャパシタC1は、インダクタL1を介してICチップ24の一方端子と一方の端子電極23との間に挿入される。)。キャパシタC2はICチップ24の他方端子と他方端子電極23との間に挿入される。これらのキャパシタ、インダクタで、複数の共振周波数を持った給電回路が構成され、広帯域化が図られる。この共振回路の共振周波数は無線通信デバイスの通信周波数に実質的に相当する。 FIG. 5 is a circuit diagram of the RFIC 20. As shown in FIG. In the RFIC 20, as illustrated in FIG. 5, a matching circuit including inductors L1 and L2 and capacitors C1 and C2 is formed between the IC chip 24 and the terminal electrode 23. Inductor L1 is inserted between one terminal of IC chip 24 and one terminal electrode 23, and inductor L2 is inserted between one terminal and the other terminal of IC chip 24 (in the example of FIG. 5, inductor L2 is , Inserted between the one terminal and the other terminal of the IC chip 24 via the inductor L1). The inductor L1 and the inductor L2 are coupled via the magnetic field M. Capacitor C1 is inserted between one terminal of IC chip 24 and one terminal electrode 23 (in the example of FIG. 5, capacitor C1 is one terminal of IC chip 24 and one terminal electrode 23 via inductor L1. Inserted between). The capacitor C 2 is inserted between the other terminal of the IC chip 24 and the other terminal electrode 23. A feed circuit having a plurality of resonance frequencies is constituted by these capacitors and inductors, and a wide band can be realized. The resonant frequency of the resonant circuit substantially corresponds to the communication frequency of the wireless communication device.
 図6は第1の実施形態に係る別の集合基板10の斜視図である。図1に示した集合基板10と異なり、RFIC配置領域9を、複数の子基板領域の縦横の配列位置のうち角位置に設けている。このように、RFIC配置領域9は、集合基板10の縁部から内側に離れた領域であればよい。また、RFIC配置領域9は、複数の子基板領域の縦横の配列位置のうち中央等、内部の位置に設けてもよい。 FIG. 6 is a perspective view of another collective substrate 10 according to the first embodiment. Unlike the collective substrate 10 shown in FIG. 1, the RFIC placement area 9 is provided at an angular position among the vertical and horizontal arrangement positions of the plurality of child substrate areas. As described above, the RFIC placement area 9 may be an area spaced inward from the edge of the collective substrate 10. In addition, the RFIC placement area 9 may be provided at an internal position such as the center among the arrangement positions of the plurality of sub substrate areas in the vertical and horizontal directions.
 本実施形態によれば、RFIC20に掛かる応力が緩和され、RFICの接続部またはRFIC自体の製造過程での破損が防止される。 According to this embodiment, the stress applied to the RFIC 20 is relieved, and the breakage of the connection portion of the RFIC or the manufacturing process of the RFIC itself is prevented.
《第2の実施形態》
 第2の実施形態では、複数の子基板領域とRFIC配置領域との幾つかの関係について示す。また、RFIC配置領域が子基板領域とは異なるサイズである例について示す。
Second Embodiment
In the second embodiment, several relationships between a plurality of child substrate areas and an RFIC arrangement area are shown. In addition, an example in which the RFIC placement area has a size different from that of the child substrate area will be described.
 図7(A)、図7(B)は、第2の実施形態に係る集合基板10の、複数の子基板領域を囲む領域とRFIC配置領域9との関係を示す平面図である。 FIGS. 7A and 7B are plan views showing the relationship between the area surrounding a plurality of child substrate areas and the RFIC arrangement area 9 in the collective substrate 10 according to the second embodiment.
 図7(A)において、二点鎖線で示す囲み領域CR1は、集合基板10の外縁に沿った辺で複数の子基板領域11を囲む矩形領域である。この図7(A)に示す例では、囲み領域CR1内で且つ子基板領域11以外の位置にRFIC配置領域9を設けている。 In FIG. 7A, a surrounding region CR1 indicated by a two-dot chain line is a rectangular region surrounding a plurality of sub substrate regions 11 by the side along the outer edge of the collective substrate 10. In the example shown in FIG. 7A, the RFIC placement area 9 is provided in the surrounding area CR1 and at a position other than the daughter board area 11.
 図7(B)において、二点鎖線で示す囲み領域CR2は、平面視で全ての子基板領域11を取り囲む最小範囲である。この図7(B)に示す例では、囲み領域CR2内で且つ子基板領域11以外の位置にRFIC配置領域9を設けている。 In FIG. 7B, the encircled area CR2 indicated by a two-dot chain line is a minimum area surrounding all the child substrate areas 11 in a plan view. In the example shown in FIG. 7B, the RFIC placement area 9 is provided in the surrounding area CR2 and at a position other than the daughter board area 11.
 このように、集合基板10の外縁に沿った辺で複数の子基板領域11を囲む領域である囲み領域CR1内にRFIC配置領域9を設ければ、RFICに掛かる応力が緩和され、RFICの接続部またはRFIC自体の製造過程での破損が防止される。 As described above, if the RFIC placement area 9 is provided in the surrounding area CR1 which is an area surrounding the plurality of sub substrate areas 11 by the side along the outer edge of the collective substrate 10, the stress applied to the RFIC is relaxed and the connection of the RFIC Damage in the manufacturing process of parts or the RFIC itself is prevented.
 また、平面視で全ての子基板領域11を取り囲む最小範囲である囲み領域CR2内にRFIC配置領域9を設ければ、RFICに掛かる応力が更に緩和され、RFICの接続部またはRFIC自体の製造過程での破損防止効果が更に高まる。 Further, if the RFIC placement area 9 is provided in the enclosing area CR2 which is the minimum area surrounding all the child substrate areas 11 in plan view, the stress applied to the RFIC is further relieved, and the manufacturing process of the connection part of RFIC or RFIC itself The damage prevention effect at
《第3の実施形態》
 第3の実施形態では、RFICに接続される放射体がRFIC配置領域外にある例を示す。
Third Embodiment
The third embodiment shows an example in which the radiator connected to the RFIC is outside the RFIC arrangement area.
 図8(A)、図8(B)は第3の実施形態に係る集合基板10の平面図である。図8(A)、図8(B)いずれも、集合基板10は複数の(8個の)子基板領域11および一つのRFIC配置領域9を備えている。また、集合基板10の縁部に縁部導体パターン12が形成されている。さらに、縁部導体パターン12から連続する面状導体15がRFIC配置領域9内に入り込んでいる。 8A and 8B are plan views of the collective substrate 10 according to the third embodiment. In each of FIGS. 8A and 8B, the collective substrate 10 includes a plurality of (eight) daughter substrate areas 11 and one RFIC arrangement area 9. Further, an edge conductor pattern 12 is formed at the edge of the collective substrate 10. Furthermore, the planar conductor 15 continuous from the edge conductor pattern 12 is intruding into the RFIC placement area 9.
 図8(A)に示す例では、RFIC配置領域9内の面状導体15に開口15APが形成されている。また、面状導体15に、開口15APとRFIC配置領域9内とを連接するスリット15SLが形成されている。そして、このスリット15SLを跨ぐようにRFIC20が電気的に接続されている。 In the example shown in FIG. 8A, an opening 15AP is formed in the planar conductor 15 in the RFIC placement area 9. Further, in the planar conductor 15, a slit 15 </ b> SL connecting the opening 15 AP and the inside of the RFIC arrangement region 9 is formed. The RFIC 20 is electrically connected to straddle the slit 15SL.
 図8(B)に示す例では、RFIC配置領域9内の面状導体15に、開口15APと、この開口15APと外縁との間を連接するスリット15SLが形成されている。そして、このスリット15SLを跨ぐようにRFIC20が電気的に接続されている。 In the example shown in FIG. 8B, the planar conductor 15 in the RFIC placement area 9 is formed with an opening 15AP and a slit 15SL connecting the opening 15AP and the outer edge. The RFIC 20 is electrically connected to straddle the slit 15SL.
 縁部導体パターン12は主に放射体として作用し、開口15APおよびスリット15SLに形成される面状導体15は、RFIC20と縁部導体パターン12とのインピーダンスを整合させるためのインピーダンス整合部として主に作用する。 The edge conductor pattern 12 mainly functions as a radiator, and the planar conductor 15 formed in the opening 15AP and the slit 15SL is mainly used as an impedance matching portion for matching the impedance of the RFIC 20 and the edge conductor pattern 12 Works.
 本実施形態によれば、RFIC20が集合基板10の縁部より内部に配置されるので、RFIC20の接続部またはRFIC20自体へ加わる応力が抑制される。しかも、集合基板10の縁部に形成された縁部導体パターン12が放射体として有効に利用されて高い通信特性が得られる。 According to the present embodiment, since the RFIC 20 is disposed inside the edge of the collective substrate 10, the stress applied to the connection portion of the RFIC 20 or the RFIC 20 itself is suppressed. In addition, the edge conductor pattern 12 formed at the edge of the collective substrate 10 is effectively used as a radiator to obtain high communication characteristics.
 なお、縁部導体パターン12はループ状に限定されるものではなく、たとえばダイポール型の放射体を構成していてもよい。 The edge conductor pattern 12 is not limited to a loop, and may be, for example, a dipole radiator.
 以上に示した各実施形態では、RFIC20を集合基板10の厚み方向の内部に内蔵された例を示したが、このRFIC20は集合基板10の表面に実装されてもよい。 In each embodiment shown above, although the example which incorporated RFIC20 in the inside of the thickness direction of collective substrate 10 was shown, this RFIC20 may be mounted on the surface of collective substrate 10. FIG.
 最後に、上述の実施形態の説明は、すべての点で例示であって、制限的なものではない。当業者にとって変形および変更が適宜可能である。本発明の範囲は、上述の実施形態ではなく、特許請求の範囲によって示される。さらに、本発明の範囲には、特許請求の範囲内と均等の範囲内での実施形態からの変更が含まれる。 Finally, the description of the above embodiments is illustrative in all respects and not restrictive. Modifications and variations are possible as appropriate to those skilled in the art. The scope of the present invention is indicated not by the embodiments described above but by the claims. Furthermore, the scope of the present invention includes modifications from the embodiments within the scope of the claims and equivalents.
C1,C2…キャパシタ
CR1,CR2…囲み領域
L1,L2…インダクタ
9…RFIC配置領域
10…集合基板
10A,10B,10C,10D,10E,10F…熱可塑性樹脂層
11…子基板領域
12…縁部導体パターン
13…ビア導体
14…キャビティ
15…面状導体
15AP…開口
15SL…スリット
20…RFIC
21…基材
22…回路パターン
23…端子電極
24…ICチップ
25…保護層
32…回路パターン
C1, C2: Capacitors CR1, CR2: Enclosure region L1, L2: Inductor 9: RFIC arrangement region 10: Aggregate substrate 10A, 10B, 10C, 10D, 10E, 10F: Thermoplastic resin layer 11: Child substrate region 12: Edge portion Conductor pattern 13 ... via conductor 14 ... cavity 15 ... planar conductor 15AP ... opening 15SL ... slit 20 ... RFIC
21 Base material 22 Circuit pattern 23 Terminal electrode 24 IC chip 25 Protective layer 32 Circuit pattern

Claims (5)

  1.  複数の子基板領域および外縁を有し、これら複数の子基板領域を分離することで複数の子基板を形成する集合基板であって、
     前記集合基板に関する情報が記録されたRFICを備え、
     前記RFICは、前記外縁に沿った辺で前記複数の子基板領域を囲む領域内に設けられた、
     集合基板。
    A collective substrate having a plurality of child substrate areas and an outer edge, and separating the plurality of child substrate areas to form a plurality of child substrates,
    An RFIC in which information on the collective substrate is recorded;
    The RFIC is provided in an area surrounding the plurality of child substrate areas on the side along the outer edge,
    Collective substrate.
  2.  前記RFICは、平面視で全ての前記子基板領域を取り囲む最小範囲の内側に設けられた、
     請求項1に記載の集合基板。
    The RFIC is provided inside a minimum range surrounding all the child substrate regions in plan view,
    The collective substrate according to claim 1.
  3.  前記RFICが設けられた領域は、前記複数の子基板領域のうち、二つの子基板領域で挟まれる領域である、
     請求項1または2に記載の集合基板。
    The area provided with the RFIC is an area sandwiched by two sub substrate areas among the plurality of sub substrate areas,
    The collective substrate according to claim 1.
  4.  前記RFICは前記集合基板の厚み方向の内部に内蔵されている、
     請求項1から3のいずれかに記載の集合基板。
    The RFIC is built in the thickness direction of the collective substrate,
    The collective substrate according to any one of claims 1 to 3.
  5.  前記RFICに接続される放射体を備え、当該放射体は前記RFICが設けられた領域外である、前記集合基板の縁部に形成された導体パターンである、
     請求項1から4のいずれかに記載の集合基板。
    A conductor pattern formed at an edge of the collective substrate, the radiator comprising a radiator connected to the RFIC, the radiator being outside the region provided with the RFIC;
    The collective substrate according to any one of claims 1 to 4.
PCT/JP2018/018560 2017-06-30 2018-05-14 Aggregate substrate WO2019003671A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194648A (en) * 2003-11-28 2007-08-02 Matsushita Electric Ind Co Ltd Multipiece patterning substrate
JP2008258332A (en) * 2007-04-03 2008-10-23 Dainippon Printing Co Ltd Printed circuit board, electronic device, manufacturing method of printed circuit board

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194648A (en) * 2003-11-28 2007-08-02 Matsushita Electric Ind Co Ltd Multipiece patterning substrate
JP2008258332A (en) * 2007-04-03 2008-10-23 Dainippon Printing Co Ltd Printed circuit board, electronic device, manufacturing method of printed circuit board

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