WO2018230232A1 - Wafer heating heater and semiconductor manufacturing device - Google Patents

Wafer heating heater and semiconductor manufacturing device Download PDF

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Publication number
WO2018230232A1
WO2018230232A1 PCT/JP2018/018843 JP2018018843W WO2018230232A1 WO 2018230232 A1 WO2018230232 A1 WO 2018230232A1 JP 2018018843 W JP2018018843 W JP 2018018843W WO 2018230232 A1 WO2018230232 A1 WO 2018230232A1
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WO
WIPO (PCT)
Prior art keywords
wafer
zones
wafer mounting
mounting surface
chamber
Prior art date
Application number
PCT/JP2018/018843
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French (fr)
Japanese (ja)
Inventor
成伸 先田
健司 新間
悦弘 西本
晃 三雲
Original Assignee
住友電気工業株式会社
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Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Priority to JP2019525223A priority Critical patent/JPWO2018230232A1/en
Publication of WO2018230232A1 publication Critical patent/WO2018230232A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits

Definitions

  • the present disclosure relates to a wafer heater and a semiconductor manufacturing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2017-116605 filed on June 14, 2017, and incorporates all the description content described in the above Japanese application.
  • a semiconductor manufacturing apparatus that manufactures semiconductor devices such as LSIs
  • various thin film processes such as film forming processes and etching processes represented by CVD and sputtering are performed on a semiconductor substrate (semiconductor wafer) that is an object to be processed.
  • These thin film processes are generally performed in a state where the semiconductor substrate is heated to a predetermined temperature. Therefore, a wafer heater called a susceptor for heating the semiconductor substrate placed on the placement surface from the lower surface is mounted in the vacuum chamber in which the processing is performed.
  • the wafer heater includes a wafer mounting table made of a ceramic disk-shaped member having a flat wafer mounting surface on the upper surface, and a cylindrical shape that supports the wafer mounting table from the lower surface side. And a supporting member.
  • a heating circuit composed of an electric heating coil, a thin-film resistance heating element, and the like is embedded in a plane parallel to the wafer mounting surface.
  • a pair of terminal portions provided on the lower surface side of the wafer mounting table are electrically connected to both ends of the heat generating circuit, and the heat generating circuit is connected from an external power source through the pair of terminal portions and the lead wires. Is supplied with power.
  • the wafer heater it is required to heat the semiconductor substrate uniformly over the entire surface by improving the thermal uniformity on the wafer mounting surface so that the quality of the semiconductor device as a product does not vary. .
  • the circuit pattern of the heat generating circuit is made minute so that temperature unevenness does not occur, or the wafer mounting surface is divided into a plurality of zones (multi-zones), and power is individually supplied to the heat generating circuits arranged in each of them.
  • the temperature is finely controlled for each zone.
  • the wafer heater according to the present disclosure is a wafer heater used in a chamber having a disk-shaped member made of ceramic having an upper surface as a wafer mounting surface and having a wall surface low-temperature part in a part of the inner side wall. .
  • the wafer mounting surface is demarcated into a plurality of zones as viewed from the upper surface side, and the disk-like member is provided with an individual heating circuit in each of the plurality of zones. At least one of the plurality of zones is configured such that the peripheral edge is arranged at a position facing the wall surface low temperature portion.
  • the present application discloses a semiconductor manufacturing apparatus including the wafer heater and a chamber having a wall surface low temperature part in a part of the inner side wall.
  • FIG. 1 is a schematic cross-sectional schematic diagram of a semiconductor manufacturing apparatus including a wafer heater according to a specific example of the present disclosure.
  • FIG. 2 is a schematic plan view of the semiconductor manufacturing apparatus of FIG.
  • FIG. 3 is a schematic plan view of an alternative example of the semiconductor manufacturing apparatus of FIG.
  • FIG. 4A is a schematic plan view of a semiconductor manufacturing apparatus according to an embodiment of the present disclosure.
  • FIG. 4B is a schematic plan view of a semiconductor manufacturing apparatus of a comparative example.
  • the structure in the chamber in which the wafer heater is mounted is not uniform with respect to the circumferential direction of the wafer mounting surface of the wafer heater.
  • a load lock opening / closing portion for taking in and out the wafer is provided in a part of the chamber wall. For this reason, the temperature near the opening / closing portion of the load lock on the wafer placement surface may be locally reduced as compared with other portions.
  • An embodiment of the present disclosure is a wafer heater used in a chamber having a ceramic disk-shaped member whose upper surface is a wafer mounting surface and having a wall surface low temperature portion on a part of an inner side wall.
  • the wafer mounting surface is defined by a plurality of zones viewed from the upper surface side, and the disk-like member is provided with an individual heating circuit in each of the plurality of zones. At least one of the plurality of zones is configured such that a peripheral edge thereof is disposed at a position facing the wall surface low temperature portion.
  • the heat generating circuit is embedded in the disk-shaped member.
  • the heat generating circuit is composed of an electric heating coil, a thin-film resistance heating element, or the like, and is preferably embedded in a disk-like member in a plane parallel to the wafer mounting surface.
  • a pair of terminal portions provided on the lower surface side of the wafer mounting table are electrically connected to both ends of each heat generating circuit, and power is supplied from an external power source through the pair of terminal portions.
  • the plurality of zones include a plurality of fan-shaped zones defined by dividing the wafer mounting surface in a circumferential direction of the wafer mounting surface.
  • at least one of the plurality of sector zones is arranged such that the wall surface low temperature portion is included in an angular range from end to end in the circumferential direction of the sector.
  • the wall surface low temperature part is typically exemplified by a load lock opening / closing part.
  • the plurality of zones are a plurality of circular zones that are concentric with the center of the wafer mounting surface and a ring-shaped portion that surrounds the periphery of the circular zone on the wafer mounting surface in the circumferential direction. It has a sector zone, and at least one of the plurality of sector zones is preferably arranged so that the wall surface low temperature portion is included in an angular range from end to end in the circumferential direction of the sector.
  • the plurality of heat generating circuits may each have a pair of power feeding terminal portions.
  • an embodiment of the semiconductor manufacturing apparatus includes the wafer heater, and a chamber that includes the wafer heater and has a wall surface low-temperature portion at a part of the inner side wall.
  • FIG. 1 is a schematic cross-sectional schematic diagram of a semiconductor manufacturing apparatus including a wafer heater according to a specific example of the present disclosure.
  • FIG. 1 shows a state in which a longitudinal section of the semiconductor manufacturing apparatus is viewed from the front. However, it is not a diagram that accurately shows a cross section cut by one straight line passing through the center of the wafer mounting table, but a diagram that schematically shows a cross-sectional state in order to make it easy to explain the embedded state of components. As shown in FIG.
  • a wafer heater 1 included in a semiconductor manufacturing apparatus 3 is preferably made of ceramics having a wafer mounting surface 10 a on which a semiconductor wafer W is mounted on the upper surface.
  • Flange portions that are bent outward are formed at both upper and lower ends of the support member 20, sealing materials such as O-rings and gaskets (not shown) provided on the annular end surfaces, screws (not shown) that penetrate the flange portions, etc.
  • the upper and lower ends are hermetically joined to the lower surface of the wafer mounting table 10 and the bottom surface of the chamber 2 by the coupling means. Thereby, the inside of the support member 20 can be isolated from the corrosive gas atmosphere in the chamber 2.
  • Ceramics that are suitable materials for the wafer mounting table 10 and the support member 20 include aluminum nitride, silicon nitride, silicon carbide, and aluminum oxide. Of these, aluminum nitride having high thermal conductivity is preferable.
  • the wafer mounting table 10 and the support member 20 are preferably made of the same material. Accordingly, since it can be similarly expanded and contracted during heating and cooling, problems such as warpage of the wafer mounting surface 10a due to thermal stress and damage to the joint between the wafer mounting table 10 and the support member 20 are unlikely to occur. can do.
  • a wafer heater 1 includes a central heating circuit 11 that mainly heats a central region of the wafer mounting surface 10 a in a plane parallel to the wafer mounting surface 10 a inside the wafer mounting table 10.
  • the outer peripheral heat generating circuits 12 and 13 for mainly heating the annular outer peripheral region around the central region are embedded.
  • Each of these three heat generating circuits 11, 12, and 13 has a pair of terminal portions 11a, 12a, and 13a electrically connected to both ends, and a total of these three pairs of terminal portions 11a, 12a, and 13a and those Power can be individually supplied from an external power source (not shown) through the lead wires 11b, 12b, and 13b. Therefore, the temperature of each of the three heat generating circuits 11 to 13 can be individually controlled.
  • FIG. 2 is a schematic plan view illustrating the configuration of the upper surface side of the wafer mounting table when the semiconductor manufacturing apparatus 3 of FIG. 1 is viewed in plan.
  • the wafer mounting table 10 in which the three heat generating circuits 11 to 13 are embedded has a wafer mounting surface 10a on the wafer mounting surface 10a according to the structure in the chamber 2 in which the wafer heater 1 is installed. It is divided into a circular central zone Z1 located in the central part and two fan-shaped outer peripheral zones Z2 and Z3 obtained by dividing an annular outer peripheral region located around the circular central zone Z1 in the circumferential direction.
  • a central heat generating circuit 11 (not shown in FIG. 2) is embedded in the circular central zone Z1, and outer peripheral heat generating circuits 12, 13 (not shown in FIG. 2) are embedded in the fan-shaped outer peripheral zones Z2 and Z3, respectively.
  • the structure in the chamber 2 where the wafer heater 1 is installed is not uniform with respect to the circumferential direction of the wafer mounting table 10 of the wafer heater 1.
  • the wall portion of the chamber 2 surrounding the wafer heater 1 has a rectangular shape when viewed from above, and the load lock serving as the wall surface low temperature portion of the chamber 2 is formed on the upper wall portion of FIG.
  • the opening / closing part 2a is provided. For this reason, under the influence of the load lock opening / closing portion 2a, a portion of the wafer placement surface 10a close to the load lock opening / closing portion 2a may locally become low in temperature.
  • the wall surface low temperature part is not limited to the load lock opening / closing part, and includes a part where the temperature is partially lowered by other factors of the wall surface structure.
  • the load lock opening / closing portion 2a is located within an angular range A1 from end to end in the circumferential direction of the fan-shaped, so that the heat generated in the fan-shaped outer peripheral zone Z2 is embedded.
  • the circuit 12 can set the amount of heat generation higher than other heat generation circuits. Thereby, the thermal uniformity of the wafer mounting surface 10a can be maintained.
  • the wafer mounting surface is divided into a circular central region and an annular outer peripheral region, and the outer peripheral region is equally divided into two in the circumferential direction.
  • the present invention is not limited to this, and various division patterns can be adopted depending on the structure in the chamber that may cause the thermal uniformity of the wafer mounting surface.
  • the wafer mounting surface 100a of the wafer mounting table 100 is divided into a circular central zone Z11, an annular intermediate zone Z12 around the circular central zone Z11, and an outermost annular outer peripheral region equally divided into four in the circumferential direction. It may be divided into four sector-shaped outer peripheral zones Z13 to Z16 obtained.
  • the angle is within an angular range A2 from end to end in the circumferential direction of the fan-shaped.
  • the load lock opening / closing portion 2a can be positioned, and on the two straight lines L1 and L2 drawn from the center point of the wafer mounting surface 110a toward both ends in the circumferential direction of the sector-shaped outer peripheral zone Z13, respectively. Since both end portions of the load lock opening / closing portion 2a can be substantially positioned, it is possible to further improve the thermal uniformity of the wafer mounting surface 110a. It should be noted that a plurality of zones may be included in a range corresponding to the load lock opening / closing portion 2a, that is, a range between the straight lines L1 and L2 in FIG.
  • a semiconductor manufacturing apparatus 3 as shown in FIG. 4A was produced and the thermal uniformity of the wafer mounting surface was evaluated. Specifically, first, 0.5 part by mass of yttrium oxide as a sintering aid was added to 99.5 parts by mass of the aluminum nitride powder, and a binder and an organic solvent were further added, followed by ball mill mixing to prepare a slurry. The obtained slurry was sprayed by a spray drying method to produce granules, which were press-molded to produce three molded bodies. These compacts were degreased at 700 ° C. in a nitrogen atmosphere and then sintered at 1850 ° C. in a nitrogen atmosphere to obtain three aluminum nitride sintered bodies. The obtained sintered body was processed into a disk shape having a diameter of 330 mm and a thickness of 8 mm. At this time, the surface roughness Ra was 0.8 ⁇ m, and the flatness was 50 ⁇ m.
  • One of these three aluminum nitride sintered bodies has a circular central zone Z21 having a diameter of 160 mm on one side thereof, a plurality of concentric circular conductive portions, and adjacent ones of these circular conductive portions
  • a circuit pattern having a line width of 4 mm and a thickness of 20 ⁇ m formed in a single stroke shape with linear conductive portions connecting each other was formed by screen printing tungsten paste.
  • each of the four fan-shaped outer peripheral zones Z22 to Z25 in which the annular region on the outer peripheral side of the central central portion Z21 having a diameter of 160 mm is equally divided into four in the circumferential direction is formed concentrically.
  • a cylindrical support member made of aluminum nitride (AlN) having an inner diameter of 60 mm, a height of 150 mm, and a thickness of 2 mm, having flange portions at both ends, is attached to the wafer mounting table 200 thus manufactured with a screw. Joined. Then, as shown in FIG. 4A, the other end of the support member was fixed to the bottom of the chamber such that the fan-shaped outer peripheral zone Z22 faces the load lock opening / closing part 2a.
  • the heating circuit provided for each zone was connected to a power source so that power could be supplied individually. In this way, the semiconductor manufacturing apparatus 3 of Sample 1 was manufactured.
  • the same wafer mounting table 200 as that used in the semiconductor manufacturing apparatus 3 of the sample 1 is manufactured.
  • an intermediate portion between two adjacent fan-shaped outer peripheral zones Z22 to Z23 is load-locked.
  • a semiconductor manufacturing apparatus 3 of Sample 2 was fabricated in the same manner as Sample 1 except that it was fixed in the chamber so as to face the center of the opening / closing portion 2a.
  • the load lock opening / closing portion 2a is located within the angular range from the end to the end in the circumferential direction of the fan-shaped outer peripheral zone Z22. Therefore, only the fan-shaped outer peripheral zone Z22 is substantially the load lock opening / closing portion 2a. It comes to oppose. Therefore, it is possible to satisfactorily cope with a local temperature decrease in the fan-shaped outer peripheral zone Z22 caused by the load lock opening / closing portion 2a.
  • the sample 2 is different from the sample 1 in that both the fan-shaped outer peripheral zones Z22 and Z23 partially face the load lock opening / closing portion 2a.
  • A1 A2 Angle range W Semiconductor substrate Z1 Circular central zone Z2, Z3 Fan-shaped outer peripheral zone Z11 Circular central zone Z12 Annular intermediate zone Z13-Z16 Fan-shaped outer peripheral zone Z21 Circular central zone Z22-Z25 Fan-shaped outer peripheral zone L1, L2 Linear 1 Wafer heater 2 Chamber 3
  • Semiconductor manufacturing apparatus 2a Load lock opening / closing part 10, 100, 200 Wafer mounting table 20 Support member 10a, 100a Wafer mounting surface 11 Central heating circuit 12, 13 Outer peripheral heating circuit 11a, 12a, 13a Terminal part 11b, 12b , 13b Leader

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  • Computer Hardware Design (AREA)
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Abstract

This wafer heating heater includes a ceramic disk-shaped member of which the top surface is a wafer mounting surface and is used inside a chamber having a wall surface low temperature section on a portion of an inner surface side wall, the wafer mounting surface being defined into a plurality of zones seen from the top surface side. The disk-shaped member comprises individual heat-generating circuits respectively provided in the plurality of zones. At least one of the plurality of zones is disposed in a position where the periphery thereof faces the wall surface low temperature section.

Description

ウエハ加熱ヒータ及び半導体製造装置Wafer heater and semiconductor manufacturing apparatus
　本開示は、ウエハ加熱ヒータ及び半導体製造装置に関する。本出願は、２０１７年６月１４日出願の日本出願第２０１７－１１６６０５号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。 The present disclosure relates to a wafer heater and a semiconductor manufacturing apparatus. This application claims priority based on Japanese Patent Application No. 2017-116605 filed on June 14, 2017, and incorporates all the description content described in the above Japanese application.
　ＬＳＩなどの半導体デバイスを製造する半導体製造装置では、被処理物である半導体基板（半導体ウエハ）に対してＣＶＤやスパッタリングに代表される成膜処理やエッチング処理など、様々な薄膜処理が施される。これらの薄膜処理は、半導体基板を所定の温度に加熱した状態で処理を行うのが一般的である。そのため、当該処理が行われる真空チャンバー内には、載置面に載置された半導体基板をその下面から加熱するサセプタとも称するウエハ加熱ヒータが搭載されている。 2. Description of the Related Art In a semiconductor manufacturing apparatus that manufactures semiconductor devices such as LSIs, various thin film processes such as film forming processes and etching processes represented by CVD and sputtering are performed on a semiconductor substrate (semiconductor wafer) that is an object to be processed. . These thin film processes are generally performed in a state where the semiconductor substrate is heated to a predetermined temperature. Therefore, a wafer heater called a susceptor for heating the semiconductor substrate placed on the placement surface from the lower surface is mounted in the vacuum chamber in which the processing is performed.
　上記ウエハ加熱ヒータは、例えば特許文献１に示されるように、上面に平坦なウエハ載置面を備えたセラミックス製の円板状部材からなるウエハ載置台と、これを下面側から支持する円筒状の支持部材とから構成されている。該ウエハ載置台の内部には電熱コイルや薄膜状の抵抗発熱体等からなる発熱回路がウエハ載置面に平行な面内に埋設されている。
該発熱回路の両端部にはウエハ載置台の下面側に設けた１対の端子部が電気的に接続しており、この１対の端子部及びその引出線を介して外部電源から該発熱回路に給電が行われる。 For example, as disclosed in Patent Document 1, the wafer heater includes a wafer mounting table made of a ceramic disk-shaped member having a flat wafer mounting surface on the upper surface, and a cylindrical shape that supports the wafer mounting table from the lower surface side. And a supporting member. Inside the wafer mounting table, a heating circuit composed of an electric heating coil, a thin-film resistance heating element, and the like is embedded in a plane parallel to the wafer mounting surface.
A pair of terminal portions provided on the lower surface side of the wafer mounting table are electrically connected to both ends of the heat generating circuit, and the heat generating circuit is connected from an external power source through the pair of terminal portions and the lead wires. Is supplied with power.
　上記したウエハ加熱ヒータでは、製品となる半導体デバイスの品質にばらつきが生じないように、ウエハ載置面での均熱性を高めて半導体基板を全面に亘って均一に加熱することが求められている。そのため、該発熱回路の回路パターンを緻密にして温度ムラが生じないようにしたり、ウエハ載置面を複数のゾーン（マルチゾーン）に区分してそれらの各々に配した発熱回路に個別に給電することでゾーンごとにきめ細かく温度制御したりすることが行われている。 In the above-mentioned wafer heater, it is required to heat the semiconductor substrate uniformly over the entire surface by improving the thermal uniformity on the wafer mounting surface so that the quality of the semiconductor device as a product does not vary. . For this reason, the circuit pattern of the heat generating circuit is made minute so that temperature unevenness does not occur, or the wafer mounting surface is divided into a plurality of zones (multi-zones), and power is individually supplied to the heat generating circuits arranged in each of them. Thus, the temperature is finely controlled for each zone.
特開２００３－１７２２４号公報Japanese Patent Laid-Open No. 2003-17224
本開示に係るウエハ加熱ヒータは、上面をウエハ載置面とするセラミックス製の円板状部材を有し、内面側壁の一部に壁面低温部を有するチャンバー内にて用いられるウエハ加熱ヒータである。ウエハ載置面は上面側から見た複数のゾーンに画定されており、円板状部材は複数のゾーンのそれぞれにおいて、それぞれ個別の発熱回路を備える。複数のゾーンの少なくとも１つは、周縁が壁面低温部に向かい合う位置に配置されるように構成されている。 The wafer heater according to the present disclosure is a wafer heater used in a chamber having a disk-shaped member made of ceramic having an upper surface as a wafer mounting surface and having a wall surface low-temperature part in a part of the inner side wall. . The wafer mounting surface is demarcated into a plurality of zones as viewed from the upper surface side, and the disk-like member is provided with an individual heating circuit in each of the plurality of zones. At least one of the plurality of zones is configured such that the peripheral edge is arranged at a position facing the wall surface low temperature portion.
　また本願は、上記ウエハ加熱ヒータと、内面側壁の一部に壁面低温部を有するチャンバーとを備える半導体製造装置を開示する。 Also, the present application discloses a semiconductor manufacturing apparatus including the wafer heater and a chamber having a wall surface low temperature part in a part of the inner side wall.
図１は、本開示の一具体例のウエハ加熱ヒータを備えた半導体製造装置の模式的な断面模式図である。FIG. 1 is a schematic cross-sectional schematic diagram of a semiconductor manufacturing apparatus including a wafer heater according to a specific example of the present disclosure. 図２は、図１の半導体製造装置の平面模式図である。FIG. 2 is a schematic plan view of the semiconductor manufacturing apparatus of FIG. 図３は、図１の半導体製造装置の代替例の平面模式図である。FIG. 3 is a schematic plan view of an alternative example of the semiconductor manufacturing apparatus of FIG. 図４Ａは、本開示の実施例の半導体製造装置の平面模式図である。FIG. 4A is a schematic plan view of a semiconductor manufacturing apparatus according to an embodiment of the present disclosure. 図４Ｂは、比較例の半導体製造装置の平面模式図である。FIG. 4B is a schematic plan view of a semiconductor manufacturing apparatus of a comparative example.
［本開示が解決しようとする課題］
　ウエハ加熱ヒータが搭載されるチャンバー内の構造は、ウエハ加熱ヒータ―のウエハ載置面の周方向に関して一様ではない。例えばチャンバーの壁部の一部には、ウエハの出し入れを行うロードロックの開閉部が設けられている。そのため、ウエハ載置面のうち該ロードロックの開閉部近傍の部位は、それ以外の部位に比べて温度が局所的に低下することがあった。 [Problems to be solved by the present disclosure]
The structure in the chamber in which the wafer heater is mounted is not uniform with respect to the circumferential direction of the wafer mounting surface of the wafer heater. For example, a load lock opening / closing portion for taking in and out the wafer is provided in a part of the chamber wall. For this reason, the temperature near the opening / closing portion of the load lock on the wafer placement surface may be locally reduced as compared with other portions.
　従来、上記のようなチャンバー内の構造がウエハ載置面の均熱性に及ぼす影響は無視できるほど小さく、問題視されることはほとんどなかった。しかし、近年の半導体デバイスの微細化に伴い、ウエハ載置面の温度分布に対してより精密な制御が求められるようになってきており、上記のチャンバー内の構造によるウエハ載置面の均熱性への悪影響を抑える必要が生じている。本開示は、このような事情に鑑みてなされたものであり、ウエハ加熱ヒータがそのウエハ載置面の周方向に関して一様でない構造を有するチャンバー内に搭載されるような場合であっても、該ウエハ載置面の均熱性を維持することが可能なウエハ加熱ヒータを提供することを目的とする。 Conventionally, the influence of the structure in the chamber as described above on the thermal uniformity of the wafer mounting surface is so small that it can be ignored, and has hardly been regarded as a problem. However, with the recent miniaturization of semiconductor devices, more precise control over the temperature distribution on the wafer mounting surface has been demanded, and the thermal uniformity of the wafer mounting surface due to the structure in the chamber described above. There is a need to reduce the negative impact on The present disclosure has been made in view of such circumstances, and even when the wafer heater is mounted in a chamber having a non-uniform structure with respect to the circumferential direction of the wafer mounting surface, It is an object of the present invention to provide a wafer heater capable of maintaining the thermal uniformity of the wafer mounting surface.
［本開示の効果］
　本開示によれば、ウエハ加熱ヒータをそのウエハ載置面の周方向に関して一様でない構造を有するチャンバー内に搭載する場合であっても、該ウエハ載置面の均熱性を維持することが可能になる。 [Effects of the present disclosure]
According to the present disclosure, even when the wafer heater is mounted in a chamber having a structure that is not uniform in the circumferential direction of the wafer mounting surface, it is possible to maintain the thermal uniformity of the wafer mounting surface. become.
［本開示の実施形態の説明］
　最初に本開示の実施形態を列記して説明する。本開示の実施形態は、上面をウエハ載置面とするセラミックス製の円板状部材を有し、内面側壁の一部に壁面低温部を有するチャンバー内にて用いられるウエハ加熱ヒータである。上記ウエハ載置面は上面側から見た複数のゾーンに画定されており、上記円板状部材は上記複数のゾーンのそれぞれにおいて、それぞれ個別の発熱回路を備える。上記複数のゾーンの少なくとも１つは、周縁が上記壁面低温部に向かい合う位置に配置されるように構成されている。これにより、ウエハ加熱ヒータをそのウエハ載置面の周方向に関して一様でない構造を有するチャンバー内に搭載する場合であっても、該ウエハ載置面の均熱性を維持することができる。
発熱回路は、円板状部材の内部に埋設されている。発熱回路は、電熱コイルや薄膜状の抵抗発熱体等からなり、円板状部材においてウエハ載置面に平行な面内に埋設されていると良い。それぞれの発熱回路の両端部にはウエハ載置台の下面側に設けた１対の端子部が電気的に接続しており、この１対の端子部を通じて外部電源から給電が行われる。 [Description of Embodiment of Present Disclosure]
First, embodiments of the present disclosure will be listed and described. An embodiment of the present disclosure is a wafer heater used in a chamber having a ceramic disk-shaped member whose upper surface is a wafer mounting surface and having a wall surface low temperature portion on a part of an inner side wall. The wafer mounting surface is defined by a plurality of zones viewed from the upper surface side, and the disk-like member is provided with an individual heating circuit in each of the plurality of zones. At least one of the plurality of zones is configured such that a peripheral edge thereof is disposed at a position facing the wall surface low temperature portion. Thereby, even when the wafer heater is mounted in a chamber having a structure that is not uniform in the circumferential direction of the wafer mounting surface, the thermal uniformity of the wafer mounting surface can be maintained.
The heat generating circuit is embedded in the disk-shaped member. The heat generating circuit is composed of an electric heating coil, a thin-film resistance heating element, or the like, and is preferably embedded in a disk-like member in a plane parallel to the wafer mounting surface. A pair of terminal portions provided on the lower surface side of the wafer mounting table are electrically connected to both ends of each heat generating circuit, and power is supplied from an external power source through the pair of terminal portions.
　上記本開示のウエハ加熱ヒータの実施形態においては、上記複数のゾーンは、上記ウエハ載置面を上記ウエハ載置面の周方向に区分することで画定される複数の扇形ゾーンを有しており、上記複数の扇形ゾーンの少なくとも１つは、扇形の周方向における端から端までの角度範囲内に、上記壁面低温部が含まれるように配置されていることが好ましい。上記壁面低温部は、代表的にはロードロックの開閉部が例示される。これにより、該ロードロックの開閉部が開閉することによりウエハ載置面が局所的に冷却されるような状況が生じてもウエハ載置面の均熱性を保つことができる。
　なお、本明細書において扇形ゾーンとは、円形状を２つの半径とその間の円弧で区切った領域、および、当該領域の内の２つの円弧で区切られた円環の一部である領域を含む。 In the embodiment of the wafer heater according to the present disclosure, the plurality of zones include a plurality of fan-shaped zones defined by dividing the wafer mounting surface in a circumferential direction of the wafer mounting surface. Preferably, at least one of the plurality of sector zones is arranged such that the wall surface low temperature portion is included in an angular range from end to end in the circumferential direction of the sector. The wall surface low temperature part is typically exemplified by a load lock opening / closing part. As a result, even if a situation occurs in which the wafer placement surface is locally cooled by opening / closing the load lock opening / closing portion, the thermal uniformity of the wafer placement surface can be maintained.
In the present specification, the fan-shaped zone includes a region in which a circular shape is divided by two radii and an arc between them, and a region that is a part of an annulus divided by two of the regions. .
　上記複数のゾーンは、上記ウエハ載置面の中心を同心とする円形状のゾーンと、上記ウエハ載置面において上記円形状のゾーンの周囲を囲む円環状の部分を周方向に区分した複数の扇形ゾーンを有し、上記複数の扇形ゾーンの少なくとも１つは、扇形の周方向における端から端までの角度範囲内に、上記壁面低温部が含まれるように配置されていることが好ましい。また、上記複数の発熱回路は、個々に一対の給電用の端子部を有すると良い。 The plurality of zones are a plurality of circular zones that are concentric with the center of the wafer mounting surface and a ring-shaped portion that surrounds the periphery of the circular zone on the wafer mounting surface in the circumferential direction. It has a sector zone, and at least one of the plurality of sector zones is preferably arranged so that the wall surface low temperature portion is included in an angular range from end to end in the circumferential direction of the sector. The plurality of heat generating circuits may each have a pair of power feeding terminal portions.
　また、本開示の半導体製造装置の実施形態は、上記ウエハ加熱ヒータと、上記ウエハ加熱ヒータを内部に備え、内面側壁の一部に壁面低温部を有するチャンバーとを有する。この半導体製造装置は、ロードロックの開閉部が開閉することによりウエハ載置面が局所的に冷却されるような状況が生じて、チャンバー内壁側の一部の温度が低下して壁面低温部となってもウエハ載置面の均熱性を保つことができるので、品質にばらつきが生じにくい半導体デバイスを作製することが可能になる。 Further, an embodiment of the semiconductor manufacturing apparatus according to the present disclosure includes the wafer heater, and a chamber that includes the wafer heater and has a wall surface low-temperature portion at a part of the inner side wall. In this semiconductor manufacturing apparatus, a situation in which the wafer mounting surface is locally cooled by opening and closing the load lock opening and closing unit, the temperature of a part of the chamber inner wall side decreases, and the wall surface low temperature unit and Even so, the temperature uniformity of the wafer mounting surface can be maintained, so that it is possible to manufacture a semiconductor device that is less likely to cause variations in quality.
　次に図面を参照しながら、本開示のウエハ加熱ヒータを搭載した半導体製造装置の一具体例について説明する。図１は、本開示の一具体例のウエハ加熱ヒータを備えた半導体製造装置の模式的な断面模式図である。なお、図１は半導体製造装置に縦断面を正面から見た状態を示している。ただし、ウエハ載置台の中心を通る１つの直線で切断した断面を正確に示す図ではなく、構成要素の埋設状態を説明しやすくするために模式的に断面の状態を示した図である。図１に示すように、この本開示の一具体例の半導体製造装置３が有するウエハ加熱ヒータ１は、半導体ウエハＷを載置するウエハ載置面１０ａを上面に備えた好適にはセラミックスからなる円板状部材としての略円板状のウエハ載置台１０と、これを下面から支持する好適にはセラミックスからなる略円筒形状の支持部材２０とを有しており、チャンバー２内に設置されている。 Next, a specific example of a semiconductor manufacturing apparatus equipped with the wafer heater of the present disclosure will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional schematic diagram of a semiconductor manufacturing apparatus including a wafer heater according to a specific example of the present disclosure. FIG. 1 shows a state in which a longitudinal section of the semiconductor manufacturing apparatus is viewed from the front. However, it is not a diagram that accurately shows a cross section cut by one straight line passing through the center of the wafer mounting table, but a diagram that schematically shows a cross-sectional state in order to make it easy to explain the embedded state of components. As shown in FIG. 1, a wafer heater 1 included in a semiconductor manufacturing apparatus 3 according to a specific example of the present disclosure is preferably made of ceramics having a wafer mounting surface 10 a on which a semiconductor wafer W is mounted on the upper surface. A substantially disk-shaped wafer mounting table 10 as a disk-shaped member, and a substantially cylindrical support member 20 preferably made of ceramics, which supports the wafer mounting table 10 from the lower surface, are installed in the chamber 2. Yes.
　支持部材２０の上下両端部には外側に屈曲したフランジ部が形成されており、それらの環状端面に設けた図示しないＯ－リング、ガスケット等のシール材及び該フランジ部を貫通する図示しないネジ等の結合手段によって、該上下両端部はウエハ載置台１０の下面及びチャンバー２の底面にそれぞれ気密に接合されている。これにより、支持部材２０の内側をチャンバー２内の腐食性ガス雰囲気から隔離することが可能になる。 Flange portions that are bent outward are formed at both upper and lower ends of the support member 20, sealing materials such as O-rings and gaskets (not shown) provided on the annular end surfaces, screws (not shown) that penetrate the flange portions, etc. The upper and lower ends are hermetically joined to the lower surface of the wafer mounting table 10 and the bottom surface of the chamber 2 by the coupling means. Thereby, the inside of the support member 20 can be isolated from the corrosive gas atmosphere in the chamber 2.
　上記のウエハ載置台１０や支持部材２０の好適な材質であるセラミックスとしては、例えば窒化アルミニウム、窒化ケイ素、炭化ケイ素、酸化アルミニウム等を挙げることができる。これらの中では熱伝導率の高い窒化アルミニウムが好ましい。ウエハ載置台１０と支持部材２０は互いに同じ材質からなるのが好ましい。これにより加熱や冷却の際に同様に膨張や縮小させることができるので、熱応力によるウエハ載置面１０ａの反りやウエハ載置台１０と支持部材２０との接合部の破損等の問題を生じにくくすることができる。 Examples of ceramics that are suitable materials for the wafer mounting table 10 and the support member 20 include aluminum nitride, silicon nitride, silicon carbide, and aluminum oxide. Of these, aluminum nitride having high thermal conductivity is preferable. The wafer mounting table 10 and the support member 20 are preferably made of the same material. Accordingly, since it can be similarly expanded and contracted during heating and cooling, problems such as warpage of the wafer mounting surface 10a due to thermal stress and damage to the joint between the wafer mounting table 10 and the support member 20 are unlikely to occur. can do.
　本開示の一具体例のウエハ加熱ヒータ１は、ウエハ載置台１０の内部におけるウエハ載置面１０ａに平行な面内に、ウエハ載置面１０ａの中央領域を主に加熱する中央発熱回路１１と、該中央領域の周りの環状の外周領域を主に加熱する外周発熱回路１２、１３とが埋設されている。これら３つの発熱回路１１、１２、１３の各々は、両端部に１対の端子部１１ａ、１２ａ、１３ａが電気的に接続しており、これら合計３対の端子部１１ａ、１２ａ、１３ａ及びそれらの引出線１１ｂ、１２ｂ、１３ｂを介して図示しない外部電源から個別に給電できるようになっている。よって、これら３つの発熱回路１１～１３の各々は個別に温度制御できるようになっている。 A wafer heater 1 according to a specific example of the present disclosure includes a central heating circuit 11 that mainly heats a central region of the wafer mounting surface 10 a in a plane parallel to the wafer mounting surface 10 a inside the wafer mounting table 10. The outer peripheral heat generating circuits 12 and 13 for mainly heating the annular outer peripheral region around the central region are embedded. Each of these three heat generating circuits 11, 12, and 13 has a pair of terminal portions 11a, 12a, and 13a electrically connected to both ends, and a total of these three pairs of terminal portions 11a, 12a, and 13a and those Power can be individually supplied from an external power source (not shown) through the lead wires 11b, 12b, and 13b. Therefore, the temperature of each of the three heat generating circuits 11 to 13 can be individually controlled.
　図２は、図１の半導体製造装置３を平面視した場合のウエハ載置台の上面側の構成を説明する平面模式図である。上記の３つの発熱回路１１～１３が埋設されているウエハ載置台１０は、図２に示すように、ウエハ加熱ヒータ１が設置されるチャンバー２内の構造に応じて、ウエハ載置面１０ａの中央部に位置する円形中央ゾーンＺ１と、該円形中央ゾーンＺ１の周りに位置する環状の外周領域をその周方向に分割して得られる２つの扇形外周ゾーンＺ２、Ｚ３とに区分されている。そして、この円形中央ゾーンＺ１に中央発熱回路１１（図２では図示せず）が埋設されており、扇形外周ゾーンＺ２、Ｚ３にそれぞれ外周発熱回路１２、１３（図２では図示せず）が埋設されている。 FIG. 2 is a schematic plan view illustrating the configuration of the upper surface side of the wafer mounting table when the semiconductor manufacturing apparatus 3 of FIG. 1 is viewed in plan. As shown in FIG. 2, the wafer mounting table 10 in which the three heat generating circuits 11 to 13 are embedded has a wafer mounting surface 10a on the wafer mounting surface 10a according to the structure in the chamber 2 in which the wafer heater 1 is installed. It is divided into a circular central zone Z1 located in the central part and two fan-shaped outer peripheral zones Z2 and Z3 obtained by dividing an annular outer peripheral region located around the circular central zone Z1 in the circumferential direction. A central heat generating circuit 11 (not shown in FIG. 2) is embedded in the circular central zone Z1, and outer peripheral heat generating circuits 12, 13 (not shown in FIG. 2) are embedded in the fan-shaped outer peripheral zones Z2 and Z3, respectively. Has been.
　すなわち、ウエハ加熱ヒータ１が設置されるチャンバー２内の構造は、該ウエハ加熱ヒータ１のウエハ載置台１０の周方向に関して一様ではない。図２の具体例では、ウエハ加熱ヒータ１を囲むチャンバー２の壁部は上から見て四角形になっているうえ、図２の紙面上側の壁部にはチャンバー２の壁面低温部となるロードロックの開閉部２ａが設けられている。このため、このロードロックの開閉部２ａの影響を受けて、ウエハ載置面１０ａのうちロードロックの開閉部２ａに近い部分が局所的に低温になることがある。なお、壁面低温部はロードロック開閉部に限定されるものではなく、壁面構造の他の要因によっても温度が部分的に低下する部分を含む。 That is, the structure in the chamber 2 where the wafer heater 1 is installed is not uniform with respect to the circumferential direction of the wafer mounting table 10 of the wafer heater 1. In the specific example of FIG. 2, the wall portion of the chamber 2 surrounding the wafer heater 1 has a rectangular shape when viewed from above, and the load lock serving as the wall surface low temperature portion of the chamber 2 is formed on the upper wall portion of FIG. The opening / closing part 2a is provided. For this reason, under the influence of the load lock opening / closing portion 2a, a portion of the wafer placement surface 10a close to the load lock opening / closing portion 2a may locally become low in temperature. The wall surface low temperature part is not limited to the load lock opening / closing part, and includes a part where the temperature is partially lowered by other factors of the wall surface structure.
　このような場合であっても、上記したように、ウエハ載置面１０ａの環状の外周領域を周方向に２つに区分して得た扇形外周ゾーンＺ２、Ｚ３のうち、図２に示す紙面上側の扇形外周ゾーンＺ２には、当該扇形形状の周方向における端から端までの角度範囲Ａ１内にロードロックの開閉部２ａが位置しているので、この扇形外周ゾーンＺ２に埋設されている発熱回路１２は他の発熱回路よりも発熱量を高く設定することができる。これにより、ウエハ載置面１０ａの均熱性を維持することができる。 Even in such a case, as described above, the paper surface shown in FIG. 2 among the fan-shaped outer peripheral zones Z2 and Z3 obtained by dividing the annular outer peripheral region of the wafer mounting surface 10a into two in the circumferential direction. In the upper fan-shaped outer peripheral zone Z2, the load lock opening / closing portion 2a is located within an angular range A1 from end to end in the circumferential direction of the fan-shaped, so that the heat generated in the fan-shaped outer peripheral zone Z2 is embedded. The circuit 12 can set the amount of heat generation higher than other heat generation circuits. Thereby, the thermal uniformity of the wafer mounting surface 10a can be maintained.
　上記の一具体例では、ウエハ載置面を円形の中央領域と環状の外周領域に分け、更に該外周領域を周方向に均等に２分割した例について説明したが、ウエハ載置面の分割パターンはこれに限定されるものではなく、ウエハ載置面の均熱性を乱す要因となりうるチャンバー内の構造に応じて様々な分割パターンを採用することができる。 In the above specific example, the wafer mounting surface is divided into a circular central region and an annular outer peripheral region, and the outer peripheral region is equally divided into two in the circumferential direction. However, the present invention is not limited to this, and various division patterns can be adopted depending on the structure in the chamber that may cause the thermal uniformity of the wafer mounting surface.
　例えば図３に示すように、ウエハ載置台１００のウエハ載置面１００ａを円形中央ゾーンＺ１１と、その周りの環状中間ゾーンＺ１２と、最も外側の環状の外周領域を周方向に４等分して得られる４つの扇形外周ゾーンＺ１３～Ｚ１６とに分割してもよい。この場合は、当該４つの扇形外周ゾーンのうち、最もロードロックの開閉部２ａに近い扇形外周ゾーンＺ１３を上から見た時、当該扇形形状の周方向における端から端までの角度範囲Ａ２内にロードロックの開閉部２ａを位置させることができるうえ、ウエハ載置面１１０ａの中心点から該扇形外周ゾーンＺ１３の周方向の両端部に向かって引いた２本の直線Ｌ１、Ｌ２上に、それぞれロードロックの開閉部２ａの両端部をほぼ位置させることができるので、ウエハ載置面１１０ａの均熱性をより一層高めることが可能になる。なお、ゾーンをさらに細かく分割して、ロードロック開閉部２ａに対応する範囲、すなわち図３での直線Ｌ１とＬ２に挟まれる範囲に複数のゾーンが含まれていても良い。 For example, as shown in FIG. 3, the wafer mounting surface 100a of the wafer mounting table 100 is divided into a circular central zone Z11, an annular intermediate zone Z12 around the circular central zone Z11, and an outermost annular outer peripheral region equally divided into four in the circumferential direction. It may be divided into four sector-shaped outer peripheral zones Z13 to Z16 obtained. In this case, when the fan-shaped outer peripheral zone Z13 closest to the load-lock opening / closing portion 2a is viewed from above among the four fan-shaped outer peripheral zones, the angle is within an angular range A2 from end to end in the circumferential direction of the fan-shaped. The load lock opening / closing portion 2a can be positioned, and on the two straight lines L1 and L2 drawn from the center point of the wafer mounting surface 110a toward both ends in the circumferential direction of the sector-shaped outer peripheral zone Z13, respectively. Since both end portions of the load lock opening / closing portion 2a can be substantially positioned, it is possible to further improve the thermal uniformity of the wafer mounting surface 110a. It should be noted that a plurality of zones may be included in a range corresponding to the load lock opening / closing portion 2a, that is, a range between the straight lines L1 and L2 in FIG.
　以上、本発明のウエハ加熱ヒータ及びこれを搭載した半導体製造装置について具体例を挙げて説明したが、本発明は係る具体例に限定されるものではなく、本発明の主旨から逸脱しない範囲の種々の態様で実施することが可能である。すなわち、本発明の技術的範囲は、請求の範囲及びその均等物に及ぶものである。 As mentioned above, although the specific example was given and demonstrated about the wafer heater of this invention, and the semiconductor manufacturing apparatus which mounts this, this invention is not limited to such a specific example, Various of the range which does not deviate from the main point of this invention. It is possible to implement in the mode. That is, the technical scope of the present invention covers the claims and their equivalents.
　図４Ａに示すような半導体製造装置３を作製してウエハ載置面の均熱性について評価した。具体的には、先ず窒化アルミニウム粉末９９.５質量部に焼結助剤として酸化イットリウム０.５質量部を加え、更にバインダー、有機溶剤を加えて、ボールミル混合することにより、スラリーを作製した。得られたスラリーをスプレードライ法で噴霧することにより顆粒を作製し、これをプレス成形して３枚の成形体を作製した。これら成形体を窒素雰囲気中にて７００℃の条件で脱脂した後、窒素雰囲気中において１８５０℃で焼結して、３枚の窒化アルミニウム焼結体を得た。得られた焼結体を、直径３３０ｍｍ、厚み８ｍｍの円板状に加工した。このときの表面粗さはＲａで０.８μｍ、平面度は５０μｍであった。 A semiconductor manufacturing apparatus 3 as shown in FIG. 4A was produced and the thermal uniformity of the wafer mounting surface was evaluated. Specifically, first, 0.5 part by mass of yttrium oxide as a sintering aid was added to 99.5 parts by mass of the aluminum nitride powder, and a binder and an organic solvent were further added, followed by ball mill mixing to prepare a slurry. The obtained slurry was sprayed by a spray drying method to produce granules, which were press-molded to produce three molded bodies. These compacts were degreased at 700 ° C. in a nitrogen atmosphere and then sintered at 1850 ° C. in a nitrogen atmosphere to obtain three aluminum nitride sintered bodies. The obtained sintered body was processed into a disk shape having a diameter of 330 mm and a thickness of 8 mm. At this time, the surface roughness Ra was 0.8 μm, and the flatness was 50 μm.
　これら３枚の窒化アルミニウム焼結体のうちの１枚に対して、その一方の面の直径１６０ｍｍの円形中央ゾーンＺ２１に、同心円状の複数の円形導電部と、これら円形導電部の隣接するもの同士を接続する直線導電部とで一筆書き状に形成した線幅４ｍｍ、厚み２０μｍの回路パターンを、タングステンペーストをスクリーン印刷することにより形成した。また、その反対側の面において、その中央部の直径１６０ｍｍの円形中央ゾーンＺ２１よりも外周側の環状領域を周方向に均等に４分割した４つの扇形外周ゾーンＺ２２～Ｚ２５の各々に、同心円状の複数の湾曲導電部と、これら湾曲導電部の隣接するもの同士を接続する直線導電部とで一筆書き状に形成した線幅４ｍｍ、厚み２０μｍの回路パターンを、タングステンペーストでスクリーン印刷することにより形成した。そして、これらタングステンペーストを窒素雰囲気中の７００℃での脱脂と１８３０℃での焼成を行って発熱回路を形成した。 One of these three aluminum nitride sintered bodies has a circular central zone Z21 having a diameter of 160 mm on one side thereof, a plurality of concentric circular conductive portions, and adjacent ones of these circular conductive portions A circuit pattern having a line width of 4 mm and a thickness of 20 μm formed in a single stroke shape with linear conductive portions connecting each other was formed by screen printing tungsten paste. Further, on the opposite surface, each of the four fan-shaped outer peripheral zones Z22 to Z25 in which the annular region on the outer peripheral side of the central central portion Z21 having a diameter of 160 mm is equally divided into four in the circumferential direction is formed concentrically. By screen printing a circuit pattern with a line width of 4 mm and a thickness of 20 μm formed in a single stroke with a plurality of curved conductive parts and a linear conductive part connecting adjacent ones of these curved conductive parts with tungsten paste Formed. These tungsten pastes were degreased at 700 ° C. in a nitrogen atmosphere and baked at 1830 ° C. to form a heating circuit.
　そして、残る２枚の焼結体の各々の片面に接着用の窒化アルミニウムを主成分とする接着材料を塗布して脱脂した後、この接着材料の塗布側が内側となるように上記３枚の焼結体を重ね合わせて接合させた。このようにして得た接合体に対してその下面に、各発熱回路の両端部が露出するようにザグリ穴を設け、このザグリ穴にタングステン製の電極端子を嵌合させた。 Then, after applying and degreasing an adhesive material mainly composed of aluminum nitride for adhesion to each side of the remaining two sintered bodies, the above three sheets of sintered bodies are placed so that the application side of the adhesive material is on the inside. The ligatures were overlapped and joined. A counterbore hole was provided on the lower surface of the joined body thus obtained so that both end portions of each heat generating circuit were exposed, and a tungsten electrode terminal was fitted into the counterbore hole.
　このようにして作製したウエハ載置台２００に対して、両端部にフランジ部を有する内径６０ｍｍ、高さ１５０ｍｍ、肉厚２ｍｍの窒化アルミニウム（ＡｌＮ）製の円筒状の支持部材の一端部をネジで接合した。そして、支持部材の他端部を、図４（ａ）に示すように、扇形外周ゾーンＺ２２がロードロックの開閉部２ａに対向するようにしてチャンバーの底部に固定した。なお、ゾーンごとに設けた発熱回路には、個別に給電できるように電源に接続した。このようにして試料１の半導体製造装置３を作製した。 One end of a cylindrical support member made of aluminum nitride (AlN) having an inner diameter of 60 mm, a height of 150 mm, and a thickness of 2 mm, having flange portions at both ends, is attached to the wafer mounting table 200 thus manufactured with a screw. Joined. Then, as shown in FIG. 4A, the other end of the support member was fixed to the bottom of the chamber such that the fan-shaped outer peripheral zone Z22 faces the load lock opening / closing part 2a. The heating circuit provided for each zone was connected to a power source so that power could be supplied individually. In this way, the semiconductor manufacturing apparatus 3 of Sample 1 was manufactured.
　比較のため、上記試料１の半導体製造装置３で用いたものと同じウエハ載置台２００を作製し、これを図４Ｂに示すように隣接する２つの扇形外周ゾーンＺ２２～Ｚ２３の中間部分がロードロックの開閉部２ａの中央部に対向するようにチャンバー内に固定した以外は上記試料１と同様にして試料２の半導体製造装置３を作製した。 For comparison, the same wafer mounting table 200 as that used in the semiconductor manufacturing apparatus 3 of the sample 1 is manufactured. As shown in FIG. 4B, an intermediate portion between two adjacent fan-shaped outer peripheral zones Z22 to Z23 is load-locked. A semiconductor manufacturing apparatus 3 of Sample 2 was fabricated in the same manner as Sample 1 except that it was fixed in the chamber so as to face the center of the opening / closing portion 2a.
　このようにして作製した試料１及び２の半導体製造装置３の各々において、各発熱回路にあらかじめ設定した電圧を印加した。そして、ある程度時間が経過して定常状態になった時点でＫＬＡ－Ｔｅｎｃｏｒ社のＳｅｎｓＡｒｒａｙシリーズの３００ｍｍ、１７点基板測温計を用いて基板載置面の温度分布を測定した。その結果、試料１及び試料２のいずれにおいても、ウエハ載置面においてロードロックの開閉部２ａの近傍において局所的に温度が低くなり、ウエハ載置面の最も高温の部位と最も低温の部位との温度差が試料１で１０.５℃、試料２で１０.３℃となった。そこで、この温度差を減らして均熱性を高めるべく試料１及び２の各々において、発熱回路に印加する電圧を調整したところ、試料１では温度差を８.１℃まで減らすことができたが、試料２では逆に１０.７℃となった。 In each of the semiconductor manufacturing apparatuses 3 of Samples 1 and 2 manufactured in this way, a preset voltage was applied to each heat generating circuit. Then, when a steady state was reached after a certain amount of time, the temperature distribution on the substrate mounting surface was measured using a 300 mm, 17-point substrate thermometer of the SensArray series of KLA-Tencor. As a result, in both the sample 1 and the sample 2, the temperature is locally lowered in the vicinity of the load lock opening / closing portion 2a on the wafer mounting surface, and the highest temperature portion and the lowest temperature portion on the wafer mounting surface The temperature difference was 10.5 ° C. for sample 1 and 10.3 ° C. for sample 2. Therefore, when the voltage applied to the heating circuit was adjusted in each of Samples 1 and 2 to reduce this temperature difference and increase the thermal uniformity, in Sample 1, the temperature difference could be reduced to 8.1 ° C. In contrast, Sample 2 had a temperature of 10.7 ° C.
　これは、試料１では扇形外周ゾーンＺ２２の周方向における端から端までの角度範囲内にロードロックの開閉部２ａが位置しているので、ほぼ扇形外周ゾーンＺ２２だけがロードロックの開閉部２ａに対向するようになっている。よってロードロックの開閉部２ａに起因する扇形外周ゾーンＺ２２の局所的な温度低下に良好に対処できる。これに対して、試料２は試料１とは異なりロードロックの開閉部２ａに扇形外周ゾーンＺ２２及びＺ２３の両方がいずれも部分的に対向している。局所的に温度が低下したロードロックの開閉部２ａの近傍を加熱する場合は、扇形外周ゾーンＺ２２及びＺ２３のうちのいずれか一方か両方を加熱しなければならない。そのため、ロードロックの開閉部２ａに対向する低温部分を良好に加熱できなかったり、開閉部２ａに対向していない高温部分が加熱されたりして均熱性が悪化する結果になった。このように、本開示の要件を満たす試料１の方が本開示の要件を満たしていない試料２よりもウエハ載置面の均熱性に優れていることが分かった。 In the sample 1, the load lock opening / closing portion 2a is located within the angular range from the end to the end in the circumferential direction of the fan-shaped outer peripheral zone Z22. Therefore, only the fan-shaped outer peripheral zone Z22 is substantially the load lock opening / closing portion 2a. It comes to oppose. Therefore, it is possible to satisfactorily cope with a local temperature decrease in the fan-shaped outer peripheral zone Z22 caused by the load lock opening / closing portion 2a. On the other hand, the sample 2 is different from the sample 1 in that both the fan-shaped outer peripheral zones Z22 and Z23 partially face the load lock opening / closing portion 2a. When heating the vicinity of the load-lock opening / closing part 2a whose temperature has locally decreased, either one or both of the fan-shaped outer peripheral zones Z22 and Z23 must be heated. Therefore, the low temperature part facing the opening / closing part 2a of the load lock cannot be heated satisfactorily, or the high temperature part not facing the opening / closing part 2a is heated, resulting in deterioration of the thermal uniformity. Thus, it was found that Sample 1 that satisfies the requirements of the present disclosure is superior in heat uniformity of the wafer mounting surface than Sample 2 that does not satisfy the requirements of the present disclosure.
　Ａ１、Ａ２　　角度範囲
　Ｗ　　　半導体基板
　Ｚ１　　円形中央ゾーン
　Ｚ２、Ｚ３　　扇形外周ゾーン
　Ｚ１１　　円形中央ゾーン
　Ｚ１２　　環状中間ゾーン
　Ｚ１３～Ｚ１６　　扇形外周ゾーン
　Ｚ２１　　円形中央ゾーン
　Ｚ２２～Ｚ２５　　扇形外周ゾーン
　Ｌ１、Ｌ２　　直線
　１　　　ウエハ加熱ヒータ
　２　　　チャンバー
　３　　　半導体製造装置
２ａ　　ロードロックの開閉部
　１０、１００、２００　　ウエハ載置台
　２０　　支持部材
　１０ａ、１００ａ　　ウエハ載置面
　１１　　中央発熱回路
　１２、１３　　外周発熱回路
　１１ａ、１２ａ、１３ａ　　端子部
　１１ｂ、１２ｂ、１３ｂ　　引出線 A1, A2 Angle range W Semiconductor substrate Z1 Circular central zone Z2, Z3 Fan-shaped outer peripheral zone Z11 Circular central zone Z12 Annular intermediate zone Z13-Z16 Fan-shaped outer peripheral zone Z21 Circular central zone Z22-Z25 Fan-shaped outer peripheral zone L1, L2 Linear 1 Wafer heater 2 Chamber 3 Semiconductor manufacturing apparatus 2a Load lock opening / closing part 10, 100, 200 Wafer mounting table 20 Support member 10a, 100a Wafer mounting surface 11 Central heating circuit 12, 13 Outer peripheral heating circuit 11a, 12a, 13a Terminal part 11b, 12b , 13b Leader

Claims (6)

  1. 上面をウエハ載置面とするセラミックス製の円板状部材を有し、内面側壁の一部に壁面低温部を有するチャンバー内にて用いられるウエハ加熱ヒータであって、
    　前記ウエハ載置面は前記上面側から見た複数のゾーンに画定されており、
    　前記円板状部材は前記複数のゾーンのそれぞれにおいて、それぞれ個別の発熱回路を備え、
    　前記複数のゾーンの少なくとも１つは、周縁が前記壁面低温部に向かい合う位置に配置されるように構成されている、
    ウエハ加熱ヒータ。     A wafer heater used in a chamber having a disk-shaped member made of a ceramic having an upper surface as a wafer mounting surface and having a wall surface low-temperature part in a part of the inner side wall,
    The wafer mounting surface is defined in a plurality of zones viewed from the upper surface side,
    The disk-shaped member includes an individual heating circuit in each of the plurality of zones,
    At least one of the plurality of zones is configured such that a peripheral edge is disposed at a position facing the wall surface low-temperature part.
    Wafer heater.
  2. 　前記複数のゾーンは、前記ウエハ載置面を前記ウエハ載置面の周方向に区分することで画定される複数の扇形ゾーンを有しており、
    前記複数の扇形ゾーンの少なくとも１つは、扇形の周方向における端から端までの角度範囲内に、前記壁面低温部が含まれるように配置されている、
    請求項１に記載のウエハ加熱ヒータ。     The plurality of zones have a plurality of sector zones defined by dividing the wafer mounting surface in a circumferential direction of the wafer mounting surface,
    At least one of the plurality of sector zones is arranged such that the wall surface low temperature portion is included in an angular range from end to end in the circumferential direction of the sector.
    The wafer heater according to claim 1.
  3. 　前記複数のゾーンは、前記ウエハ載置面の中心を同心とする円形状のゾーンと、
    　前記ウエハ載置面において前記円形状のゾーンの周囲を囲む円環状の部分を周方向に区分した複数の扇形ゾーンを有し、
    　前記複数の扇形ゾーンの少なくとも１つは、扇形の周方向における端から端までの角度範囲内に、前記壁面低温部が含まれるように配置されている、
    請求項１または請求項２に記載のウエハ加熱ヒータ。     The plurality of zones are circular zones having a center of the wafer mounting surface concentric with each other;
    A plurality of fan-shaped zones in which an annular portion surrounding the circumference of the circular zone is sectioned in the circumferential direction on the wafer mounting surface;
    At least one of the plurality of sector zones is arranged such that the wall surface low temperature portion is included in an angular range from end to end in the circumferential direction of the sector.
    The wafer heater according to claim 1 or 2.
  4. 　前記複数の発熱回路は、個々に一対の給電用の端子部を有する、
    請求項１から請求項３のいずれか１項に記載のウエハ加熱ヒータ。     The plurality of heating circuits individually have a pair of power supply terminal portions.
    The wafer heater according to any one of claims 1 to 3.
  5. 　前記チャンバーはロードロックの開閉部を有し、
    前記壁面低温部は、前記ロードロックの開閉部である、
    請求項１から請求項４のいずれか１項に記載のウエハ加熱ヒータ。     The chamber has a load lock opening and closing part,
    The wall surface low temperature part is an opening / closing part of the load lock,
    The wafer heater according to any one of claims 1 to 4.
  6. 　請求項１から請求項５のいずれか１項に記載のウエハ加熱ヒータと、前記ウエハ加熱ヒータを内部に備え、内面側壁の一部に壁面低温部を有するチャンバーとを備える、
    半導体製造装置。     The wafer heater according to any one of claims 1 to 5, the chamber including the wafer heater and the chamber having a wall surface low temperature portion at a part of the inner side wall,
    Semiconductor manufacturing equipment.
PCT/JP2018/018843 2017-06-14 2018-05-16 Wafer heating heater and semiconductor manufacturing device WO2018230232A1 (en)

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JP2006332410A (en) * 2005-05-27 2006-12-07 Kyocera Corp Device for heating wafer and device for manufacturing semiconductor using it
JP2010225941A (en) * 2009-03-24 2010-10-07 Tokyo Electron Ltd Mounting base structure and processing device

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JP2006332410A (en) * 2005-05-27 2006-12-07 Kyocera Corp Device for heating wafer and device for manufacturing semiconductor using it
JP2010225941A (en) * 2009-03-24 2010-10-07 Tokyo Electron Ltd Mounting base structure and processing device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115087759A (en) * 2020-01-15 2022-09-20 应用材料公司 Method and apparatus for carbon compound film deposition
EP4090788A4 (en) * 2020-01-15 2024-01-17 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition

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