WO2018218217A3 - Mechanistic investigation and prevention of al bond pad corrosion in cu wire-bonded device assembly - Google Patents

Mechanistic investigation and prevention of al bond pad corrosion in cu wire-bonded device assembly Download PDF

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Publication number
WO2018218217A3
WO2018218217A3 PCT/US2018/034757 US2018034757W WO2018218217A3 WO 2018218217 A3 WO2018218217 A3 WO 2018218217A3 US 2018034757 W US2018034757 W US 2018034757W WO 2018218217 A3 WO2018218217 A3 WO 2018218217A3
Authority
WO
WIPO (PCT)
Prior art keywords
corrosion
wire
prevention
bond pad
device assembly
Prior art date
Application number
PCT/US2018/034757
Other languages
French (fr)
Other versions
WO2018218217A2 (en
Inventor
Oliver Ming-Ren Chyan
Nick Ross
Original Assignee
University Of North Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University Of North Texas filed Critical University Of North Texas
Priority to JP2019565409A priority Critical patent/JP2020521878A/en
Priority to CN201880041781.5A priority patent/CN110891616A/en
Publication of WO2018218217A2 publication Critical patent/WO2018218217A2/en
Publication of WO2018218217A3 publication Critical patent/WO2018218217A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/08—Anti-corrosive paints
    • C09D5/082—Anti-corrosive paints characterised by the anti-corrosive pigment
    • C09D5/086—Organic or non-macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
    • H01B7/2806—Protection against damage caused by corrosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Wire Bonding (AREA)

Abstract

Heavy corrosion on aluminum (Al) bond pads, with a "mud-crack" appearance, in a copper (Cu) wire-bonded assembly can be a critical failure mode, especially under harsh conditions such as automotive environments. This corrosion can be associated with the presence of contaminants such as chloride ions (CI-). However, the exact corrosion activation mechanism remains unclear and hence the effective corrosion prevention cannot be achieved. A novel immersion corrosion screening metrology was utilized as an in situ characterization tool to establish the corrosion mechanism directly relevant to Cu wire-bonded devices. With this improved understanding of Al bond pad corrosion mechanism, significant progress has been made toward developing effective corrosion prevention strategies to improve and ensure the overall packaging reliability.
PCT/US2018/034757 2017-05-26 2018-05-25 Mechanistic investigation and prevention of al bond pad corrosion in cu wire-bonded device assembly WO2018218217A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019565409A JP2020521878A (en) 2017-05-26 2018-05-25 Mechanism investigation and prevention of corrosion of Al bond pad in device assembly bonded with Cu wire
CN201880041781.5A CN110891616A (en) 2017-05-26 2018-05-25 Mechanism investigation and prevention of AL bond pad corrosion in CU wire bond device assemblies

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762511863P 2017-05-26 2017-05-26
US62/511,863 2017-05-26

Publications (2)

Publication Number Publication Date
WO2018218217A2 WO2018218217A2 (en) 2018-11-29
WO2018218217A3 true WO2018218217A3 (en) 2020-01-16

Family

ID=64397114

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2018/034757 WO2018218217A2 (en) 2017-05-26 2018-05-25 Mechanistic investigation and prevention of al bond pad corrosion in cu wire-bonded device assembly

Country Status (3)

Country Link
JP (1) JP2020521878A (en)
CN (1) CN110891616A (en)
WO (1) WO2018218217A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111180318B (en) * 2020-01-06 2023-08-11 贵州振华风光半导体股份有限公司 Method for improving bonding quality in integrated circuit by in-situ bonding technology

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821148A (en) * 1985-06-14 1989-04-11 Hitachi, Ltd. Resin packaged semiconductor device having a protective layer made of a metal-organic matter compound
US5248384A (en) * 1991-12-09 1993-09-28 Taiwan Semiconductor Manufacturing Company Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process
US20120156895A1 (en) * 2009-06-26 2012-06-21 Cornell University Chemical vapor deposition process for aluminum silicon nitride
US20140145339A1 (en) * 2012-10-15 2014-05-29 Freescale Semiconductor, Inc. Encapsulant for a semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101792922B (en) * 2010-04-12 2011-12-21 北京航空航天大学 Anticorrosive sealing liquid and method for sealing anodic oxide film containing copper-aluminium alloy by utilizing same
US9117756B2 (en) * 2012-01-30 2015-08-25 Freescale Semiconductor, Inc. Encapsulant with corrosion inhibitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821148A (en) * 1985-06-14 1989-04-11 Hitachi, Ltd. Resin packaged semiconductor device having a protective layer made of a metal-organic matter compound
US5248384A (en) * 1991-12-09 1993-09-28 Taiwan Semiconductor Manufacturing Company Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process
US20120156895A1 (en) * 2009-06-26 2012-06-21 Cornell University Chemical vapor deposition process for aluminum silicon nitride
US20140145339A1 (en) * 2012-10-15 2014-05-29 Freescale Semiconductor, Inc. Encapsulant for a semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CORROSION EVALUATION OF MEA SOLUTIONS BY SEM-EDS, ICP-MS AND XRD, 16 June 2015 (2015-06-16) *

Also Published As

Publication number Publication date
CN110891616A (en) 2020-03-17
WO2018218217A2 (en) 2018-11-29
JP2020521878A (en) 2020-07-27

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