WO2018217006A3 - 반도체 발광소자 및 이의 제조 방법 - Google Patents

반도체 발광소자 및 이의 제조 방법 Download PDF

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Publication number
WO2018217006A3
WO2018217006A3 PCT/KR2018/005835 KR2018005835W WO2018217006A3 WO 2018217006 A3 WO2018217006 A3 WO 2018217006A3 KR 2018005835 W KR2018005835 W KR 2018005835W WO 2018217006 A3 WO2018217006 A3 WO 2018217006A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting element
semiconductor light
manufacturing same
body portion
bottom portion
Prior art date
Application number
PCT/KR2018/005835
Other languages
English (en)
French (fr)
Other versions
WO2018217006A2 (ko
Inventor
김경민
정겨울
조영관
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020170063385A external-priority patent/KR101877237B1/ko
Priority claimed from KR1020170083451A external-priority patent/KR101946241B1/ko
Priority claimed from KR1020170083453A external-priority patent/KR101946242B1/ko
Priority claimed from KR1020170083466A external-priority patent/KR20190003895A/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2018217006A2 publication Critical patent/WO2018217006A2/ko
Publication of WO2018217006A3 publication Critical patent/WO2018217006A3/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 개시는 반도체 발광소자에 있어서, 중앙영역이 오목한 상면을 갖는 본체부; 반도체 발광소자 칩이 배치되며 중앙영역에 대응되는 부분이 본체부의 하면으로 돌출된 바닥부; 그리고 본체부의 하면에 위치하며 바닥부와 중첩되지 않는 복수의 지지부;를 포함하는 반도체 발광소자에 관한 것이다.
PCT/KR2018/005835 2017-05-23 2018-05-23 반도체 발광소자 및 이의 제조 방법 WO2018217006A2 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR10-2017-0063385 2017-05-23
KR1020170063385A KR101877237B1 (ko) 2017-05-23 2017-05-23 반도체 발광소자 및 이의 제조 방법
KR10-2017-0083451 2017-06-30
KR1020170083451A KR101946241B1 (ko) 2017-06-30 2017-06-30 반도체 발광소자 및 이의 제조 방법
KR1020170083453A KR101946242B1 (ko) 2017-06-30 2017-06-30 반도체 발광소자 및 이의 제조 방법
KR10-2017-0083453 2017-06-30
KR10-2017-0083466 2017-06-30
KR1020170083466A KR20190003895A (ko) 2017-06-30 2017-06-30 발광소자 검사장치 및 이의 방법

Publications (2)

Publication Number Publication Date
WO2018217006A2 WO2018217006A2 (ko) 2018-11-29
WO2018217006A3 true WO2018217006A3 (ko) 2019-01-17

Family

ID=64395764

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/005835 WO2018217006A2 (ko) 2017-05-23 2018-05-23 반도체 발광소자 및 이의 제조 방법

Country Status (1)

Country Link
WO (1) WO2018217006A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101970938B1 (ko) * 2019-02-11 2019-04-19 진재언 지향각이 조절된 발광소자 패키지 및 이를 이용한 발광장치
CN109887906A (zh) * 2019-02-22 2019-06-14 福建天电光电有限公司 一种高反射led封装支架
DE102021130288A1 (de) * 2021-11-19 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049857A (ja) * 2004-06-29 2006-02-16 Fuji Photo Film Co Ltd 光源、および光源の作製方法、並びにカラー感熱プリンタ
KR20060112071A (ko) * 2005-04-26 2006-10-31 엘지전자 주식회사 측면 발광용 렌즈 및 그를 이용한 발광 패키지
JP2008153617A (ja) * 2006-11-21 2008-07-03 Nichia Chem Ind Ltd 半導体発光装置
KR101652509B1 (ko) * 2015-05-27 2016-08-30 (주)애니캐스팅 백라이트 유닛용 엘이디 렌즈
KR20160115725A (ko) * 2015-03-27 2016-10-06 서울바이오시스 주식회사 발광 다이오드

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049857A (ja) * 2004-06-29 2006-02-16 Fuji Photo Film Co Ltd 光源、および光源の作製方法、並びにカラー感熱プリンタ
KR20060112071A (ko) * 2005-04-26 2006-10-31 엘지전자 주식회사 측면 발광용 렌즈 및 그를 이용한 발광 패키지
JP2008153617A (ja) * 2006-11-21 2008-07-03 Nichia Chem Ind Ltd 半導体発光装置
KR20160115725A (ko) * 2015-03-27 2016-10-06 서울바이오시스 주식회사 발광 다이오드
KR101652509B1 (ko) * 2015-05-27 2016-08-30 (주)애니캐스팅 백라이트 유닛용 엘이디 렌즈

Also Published As

Publication number Publication date
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