WO2018210040A1 - 有机发光二极管及其制备方法 - Google Patents

有机发光二极管及其制备方法 Download PDF

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WO2018210040A1
WO2018210040A1 PCT/CN2018/078650 CN2018078650W WO2018210040A1 WO 2018210040 A1 WO2018210040 A1 WO 2018210040A1 CN 2018078650 W CN2018078650 W CN 2018078650W WO 2018210040 A1 WO2018210040 A1 WO 2018210040A1
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anode electrode
electrode layer
layer
emitting diode
light emitting
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PCT/CN2018/078650
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English (en)
French (fr)
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张粲
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京东方科技集团股份有限公司
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Priority to US16/097,793 priority Critical patent/US11171301B2/en
Publication of WO2018210040A1 publication Critical patent/WO2018210040A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an organic light emitting diode and a method of fabricating the same.
  • OLED organic light-emitting diode
  • an object of the present disclosure is an organic light emitting diode and a method of fabricating the same, which can avoid the problem of short circuit between the cathode and the anode without requiring a pixel defining layer.
  • the present disclosure provides a method of fabricating an organic light emitting diode, comprising: providing a substrate; forming an anode electrode layer on the substrate; forming a passivation layer on the anode electrode layer, the passivation layer having an area smaller than the anode An area of the electrode layer; ion bombardment of the anode electrode layer and the passivation layer; removal of the passivation layer.
  • the method for fabricating the organic light emitting diode further includes: forming an organic electroluminescent layer on the anode electrode layer, and forming a cathode layer on the organic electroluminescent layer.
  • the method for fabricating the organic light emitting diode further includes: forming a pixel driving circuit structure layer between the substrate and the anode electrode layer.
  • the corner angle of the anode electrode layer is between 10 and 60 degrees.
  • the area of the passivation layer is 90% of the area of the anode electrode layer.
  • the present disclosure also provides an organic light emitting diode comprising: a substrate; an anode electrode layer disposed on the substrate, the corner of the anode electrode layer being a circular obtuse angle; and an organic electroluminescent layer covering the anode electrode a layer; a cathode electrode layer disposed on the organic electroluminescent layer.
  • the corner angle of the anode electrode layer is between 10 and 60 degrees.
  • the corners of the anode electrode layer are round obtuse angles.
  • the corners of the anode electrode layer are plasma treated.
  • the anode electrode layer is indium tin oxide.
  • the organic light emitting diode further includes a pixel driving circuit structure layer formed between the substrate and the anode electrode layer.
  • the organic light emitting diode provided by the present disclosure and the preparation method thereof can obtain an anode electrode layer with a round obtuse angle, prevent short circuit caused by overlap of the anode and the cathode, and also do not need a pixel defining layer to realize the cathode layer and the anode electrode layer.
  • the isolation improves the aperture ratio and yield of the organic light emitting diode.
  • 1 to 3 are process flow diagrams showing the preparation of an organic light emitting diode in the prior art.
  • FIG. 5 is a schematic structural view of an organic light emitting diode according to the prior art.
  • 6 through 9 are process flow diagrams illustrating the preparation of an organic light emitting diode in accordance with an embodiment of the present disclosure.
  • Figure 10 is an electron scanning photograph of the ITO anode electrode layer after ion bombardment.
  • FIG. 11 is a schematic structural view of an organic light emitting diode according to an embodiment of the present disclosure.
  • 1 to 3 show a process flow diagram of preparing an organic light emitting diode in the prior art.
  • a pixel driving circuit (array) structure layer 2 is first prepared on a substrate 1, and then a metal oxide layer such as indium tin oxide (ITO) is prepared on the pixel driving circuit structure layer 2. The layer is then etched to obtain a patterned anode electrode layer 3.
  • ITO indium tin oxide
  • FIG. 4 is an electron scanning photograph of the ITO anode electrode layer obtained by etching
  • FIG. 4 is a scanning view of the object. As can be seen from Fig. 4, the corners of the ITO anode electrode layer formed by etching are very sharp.
  • the organic electroluminescent layer 5 is evaporated on the anode electrode layer 3. Since the etching edge of the anode electrode layer 3 is relatively sharp, the organic electroluminescent layer 5 cannot completely cover the anode electrode layer 3. The corners are shown as part 12 shown in the circled portion of FIG.
  • the cathode layer 6 is evaporated on the organic electroluminescent layer 5, since the organic electroluminescent layer 5 does not completely cover the anode electrode layer 3, resulting in evaporation of the cathode, at the corners of the cathode and The anode is abutted, causing a short circuit between the anode and the cathode, as shown by the portion 13 shown in the circled portion of FIG.
  • a pixel defining layer (PDL) 4 is prepared to cover the sharp corners, and then the organic layer is evaporated on the pixel defining layer 4.
  • the light-emitting layer 5 and the cathode layer 6 are such that the vapor-deposited organic electroluminescent layer 5 completely separates the anode electrode layer 3 from the cathode layer 6, and the structure of the obtained organic light-emitting diode is as shown in FIG.
  • the presence of the pixel definition layer blocks part of the anode and reduces the aperture ratio.
  • the display is more and more like high-resolution development, and the pixels are getting smaller and smaller, especially for the OLED display in the micro display field.
  • the pixels are only a few dozen or even a few ⁇ m. Therefore, it is especially important to remove the pixel definition layer, especially in the removal.
  • the pixel defining layer without causing the junction of the cathode and the anode is a technical problem to be solved by the present disclosure.
  • FIGS. 6 to 8 are process flow diagrams for fabricating an organic light emitting diode according to an embodiment of the present disclosure.
  • a substrate 301 is first provided, a pixel driving circuit (array) structure layer 302 is prepared over the substrate 301, and then a metal oxide layer, such as an indium tin oxide (ITO) layer, is formed on the pixel driving circuit structure layer 302. As the anode electrode layer 303.
  • a metal oxide layer such as an indium tin oxide (ITO) layer
  • a passivation layer 307 is prepared on the anode electrode layer 303.
  • the passivation layer 307 material may be a dense inorganic film such as SiN3, SiO2.
  • the passivation layer is then etched into a slightly smaller pattern than the anode pattern, as shown in FIG. 7.
  • the size of the passivation layer is 90% of the size of the anode electrode layer 303, which allows for both processing cost and succession. The etching effect on the anode pattern.
  • the anode electrode layer 303 is subjected to ion bombardment using the ion bombardment apparatus (dry etching apparatus) using the passivation layer 307 as a mask, and the ion bombardment conditions can be selected as follows.
  • the power (W) was 500 W; the pressure (mT) was 60 mT; the temperature (° C.) was 50 ° C; the gas (sccm) was: chlorine gas 20 sccm, argon gas 400 sccm, helium gas 300 sccm, and time (sec) 80 seconds.
  • the ion bombardment conditions described herein are preferred conditions and are not intended to limit the present embodiment.
  • the corner of the anode electrode layer 303 is a circular obtuse angle.
  • the slope angle of the corner of the anode electrode layer 303 is in the range of 10 to 60 degrees, and within this range, it is more advantageous to completely cover the anode electrode layer 303 by the organic electroluminescent layer 305 to be evaporated below.
  • the slope angle of the corner of the anode electrode layer 303 is defined as the angle between the arc tangent at the corner of the anode electrode layer and the plane of the anode electrode layer 303, as shown by the angle a in FIG.
  • Fig. 10 is a photograph of a physical electron scan of the ITO anode electrode layer 303 after ion bombardment. As can be seen from Fig. 10, after the ion bombardment of the anode electrode layer 303, the sharp angle becomes an arc-shaped angle.
  • the organic electroluminescent layer 305 and the cathode layer 306 are deposited on the anode electrode layer 303, and the structure of the obtained organic light emitting diode is as shown in FIG.
  • the corner of the anode electrode layer 303 is a circular obtuse angle
  • the organic electroluminescent layer 305 can completely coat the anode electrode layer 303, and then vapor-deposit the cathode.
  • an anode electrode layer having a rounded obtuse angle can be obtained, preventing a short circuit caused by the overlap of the anode and the cathode, and a pixel defining layer is not required to realize the cathode layer and the anode electrode layer. Isolation improves the aperture ratio and yield of the organic light emitting diode.
  • This embodiment provides an organic light emitting diode.
  • FIG. 11 is a schematic structural view of an organic light emitting diode according to an embodiment of the present disclosure.
  • the organic light emitting diode according to the present embodiment a substrate 301; a pixel driving circuit structure layer 302 disposed on the substrate 301, and an anode electrode layer 303 disposed on the pixel driving circuit structure layer 302;
  • the luminescent layer 305 completely covers the anode electrode layer 303; and the cathode electrode layer 306 is disposed over the organic electroluminescent layer 305.
  • the anode electrode layer 303 is plasma treated with a rounded obtuse angle.
  • the slope angle of the corner of the anode electrode layer 303 is between 10 and 60 degrees, and within this range, the coverage of the anode electrode layer 303 by the organic electroluminescent layer 305 is more advantageous.
  • the specific plasma treatment method is to prepare a passivation layer having a smaller area than the anode electrode layer 303 on the anode electrode layer 303, and plasma-treat the anode electrode layer 303 with the passivation layer as a mask to obtain an anode having a round obtuse angle.
  • the electrode layer is then removed from the passivation layer.
  • the anode electrode layer may be indium tin oxide.
  • the organic electroluminescent layer can completely cover the anode electrode layer, preventing short circuit caused by the overlap of the anode and the cathode, and does not require a pixel.
  • the layer is defined to achieve isolation between the cathode layer and the anode electrode layer, and the aperture ratio and yield of the organic light emitting diode are improved.

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本公开提供一种有机发光二极管及其制备方法，该有机发光二极管的制备方法包括：提供基板；在所述基板上形成阳极电极层；在所述阳极电极层上形成钝化层，所述钝化层的面积小于所述阳极电极层的面积；对所述阳极电极层和所述钝化层进行离子轰击；去除所述钝化层。本公开提供的有机发光二极管及其制备方法，能够得到边角为圆形钝角的阳极电极层，防止阴阳极的搭接造成的短路，同时也不需要像素定义层来实现阴极层与阳极电极层的隔离，提高了有机发光二极管的开口率和良率。

Description

有机发光二极管及其制备方法
交叉引用
本申请要求于2017年5月15日提交的申请号为201710340284.2、名称为“有机发光二极管及其制备方法”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及显示技术领域，尤其涉及一种有机发光二极管及其制备方法。
背景技术
日前高分辨率显示器已经成为人们所追求的目标，尤其是有机发光二极管(OLED)高分辨率显示器，以其独有的优势，如响应速度快，全固化，自发光等备受市场的关注。
在做高分辨率OLED显示时，像素定义层(PDL，pixel define layer)的存在限制了开口率。但如果没有像素定义层，会出现阴阳极搭接短路的问题。
发明内容
鉴于现有技术中的上述问题，本公开的目的在于一种有机发光二极管及其制备方法，不需要像素定义层也能够避免阴极与阳极搭接短路的问题。
本公开提供一种有机发光二极管的制备方法，包括：提供基板；在所述基板上形成阳极电极层；在所述阳极电极层上形成钝化层，所述钝化层的面积小于所述阳极电极层的面积；对所述阳极电极层和所述钝化层进行离子轰击；去除所述钝化层。
在一示例性实施例中，所述的有机发光二极管的制备方法还包括：在所述阳极电极层上形成有机电致发光层，在所述有机电致发光层上形成阴极层。
在一示例性实施例中，所述有机发光二极管的制备方法还包括：在所述基板与所述阳极电极层之间形成像素驱动电路结构层。
在一示例性实施例中，所述阳极电极层的边角的坡度角在10～60度之间。
在一示例性实施例中，所述钝化层的面积是所述阳极电极层面积的90％。
本公开还提供一种有机发光二极管，包括：基板；阳极电极层，设置在所述基板之上， 所述阳极电极层的边角为圆形钝角；有机电致发光层，覆盖所述阳极电极层；阴极电极层，设置在所述有机电致发光层之上。
在一示例性实施例中，所述阳极电极层的边角的坡度角在10～60度之间。
在一示例性实施例中，所述阳极电极层的边角为圆形钝角。
在一示例性实施例中，所述阳极电极层的边角经过等离子处理。
在一示例性实施例中，所述阳极电极层为氧化铟锡。
在一示例性实施例中，所述有机发光二极管还包括像素驱动电路结构层，形成在所述基板与所述阳极电极层之间。
本公开提供的有机发光二极管及其制备方法，能够得到边角为圆形钝角的阳极电极层，防止阴阳极的搭接造成的短路，同时也不需要像素定义层来实现阴极层与阳极电极层的隔离，提高了有机发光二极管的开口率和良率。
附图说明
图1至图3为示出现有技术中制备有机发光二极管的工艺流程图。
图4为现有技术中经过刻蚀得到的ITO阳极电极层的电子扫描照片。
图5为根据现有技术的有机发光二极管的结构示意图。
图6至图9为示出根据本公开实施例的制备有机发光二极管的工艺流程图。
图10为ITO阳极电极层经过离子轰击之后的电子扫描照片。
图11为根据本公开实施例的有机发光二极管的结构示意图。
具体实施方式
下面结合附图和实施例对本公开作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅用于解释本公开，而非对本公开的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本公开相关的部分而非全部结构。
图1至图3示出现有技术中制备有机发光二极管的工艺流程图。
在现有技术中，如图1所示，首先在基板1之上制备像素驱动电路(阵列)结构层2，然后在像素驱动电路结构层2上制备金属氧化物层，例如氧化铟锡(ITO)层，之后蚀刻该ITO层得到图形化的阳极电极层3。
但是如图1中圆圈部分示出的部分11所示，阳极电极层3的刻蚀角度比较尖锐。图4为经过刻蚀得到的ITO阳极电极层的电子扫描照片，图4为实物的扫描图。从图4可以 看出，经过刻蚀形成的ITO阳极电极层的边角非常尖锐。
接着如图2所示，在阳极电极层3上面蒸镀有机电致发光层5，由于阳极电极层3的刻蚀边角比较尖锐，导致有机电致发光层5无法完全覆盖阳极电极层3的边角，如图2中圆圈部分示出的部分12所示。
接下来，如图3所示，在有机电致发光层5上蒸镀阴极层6，由于有机电致发光层5没有完全覆盖阳极电极层3，导致蒸镀阴极时，在边角处阴极与阳极搭接，造成阴阳极短路，如图2中圆圈部分示出的部分13所示。
现有技术，为了避免这一情况，是在阳极电极层3刻蚀完后，制备像素定义层(PDL)4，来包覆尖锐的边角，然后再在像素定义层4上蒸镀有机电致发光层5和阴极层6，这样蒸镀的有机电致发光层5可将阳极电极层3与阴极层6完全的隔离开，得到的有机发光二极管的结构示意图如图4所示。
但像素定义层的存在，会遮挡阳极的部分区域，降低开口率。现在的显示越来越像高分辨率发展，像素越来越小，尤其应用于微显示领域的OLED显示，像素只有十几甚至几个μm，因此，去掉像素定义层层尤为重要，尤其在去掉像素定义层的同时又不会造成阴极与阳极的搭接是本公开要解决的技术问题。
本实施例提供了一种有机发光二极管的制备方法，图6至图8为示出根据本公开实施例的制备有机发光二极管的工艺流程图。
如图6所示，首先提供基板301，在基板301之上制备像素驱动电路(阵列)结构层302，然后在像素驱动电路结构层302上制备金属氧化物层，例如氧化铟锡(ITO)层，作为阳极电极层303。
接着，如图7所示，在阳极电极层303上，制备钝化层307，钝化层307材料可以是致密的无机薄膜，例如SiN3，SiO2。然后将钝化层刻蚀为比阳极图形略小的图形，如图7所示，在优选的情况下，钝化层的尺寸是阳极电极层303尺寸的90％，这样可以兼顾加工成本和后继对阳极图形的刻蚀效果。
然后，以钝化层307为掩模利用离子轰击设备(干刻设备)对阳极电极层303进行离子轰击，离子轰击条件可以选择如下的工艺条件。功率(W)为500W；压力(mT)为60mT；温度(℃)为50℃；气体(sccm)为：氯气20sccm，氩气400sccm，氦气300sccm；时间为(sec)80秒。这里描述的离子轰击条件为优选的条件，不用来限制本实施例。
由于阳极电极层303的边角处没有钝化层307的保护，因此尖锐的角会被离子轰击为 圆形钝角，再将钝化层刻蚀去除之后，得到如图8所示的图形。如图8所示，阳极电极层303的边角为圆形钝角。阳极电极层303的边角的坡度角的范围在10～60度之间，在这个范围之内，更加有利于下面要蒸镀的有机电致发光层305对阳极电极层303的完全覆盖。在这里阳极电极层303的边角的坡度角定义为，阳极电极层的边角处圆弧切线与阳极电极层303平面的夹角，如图9中所示的角度a。
图10为ITO阳极电极层303经过离子轰击之后的实物电子扫描照片，从图10可以看出，阳极电极层303经过离子轰击之后，尖锐的角变成了圆弧形状的角度。
然后，在阳极电极层303上面蒸镀有机电致发光层305和阴极层306，得到的有机发光二极管的结构示意图如图11所示。
由于阳极电极层303的边角为圆形钝角，所以在阳极电极层303上面蒸镀有机电致发光层305时，有机电致发光层305可以将阳极电极层303完全包覆，再蒸镀阴极306时，可以防止阴阳极的搭接造成的短路。同时也不需要像素定义层来实现阴极层与阳极电极层的隔离。
根据本实施的有机发光二极管的制备方法，能够得到边角为圆形钝角的阳极电极层，防止阴阳极的搭接造成的短路，同时也不需要像素定义层来实现阴极层与阳极电极层的隔离，提高了有机发光二极管的开口率和良率。
本实施例提供了一种有机发光二极管。
图11为根据本公开实施例的有机发光二极管的结构示意图。如图10所示，根据本实施例的有机发光二极管：基板301；像素驱动电路结构层302，设置在基板301之上，阳极电极层303，设置在像素驱动电路结构层302之上；有机电致发光层305，完全覆盖所述阳极电极层303；以及阴极电极层306，设置在所述有机电致发光层305之上。
在该实施例中，阳极电极层303经过了等离子处理，其边角为圆形钝角。阳极电极层303的边角的坡度角在10～60度之间，在这个范围之内，更加有利于有机电致发光层305对阳极电极层303的覆盖。
具体的等离子处理的方法是在阳极电极层303上制备面积小于阳极电极层303的钝化层，以钝化层为掩模对阳极电极层303进行等离子处理，得到边角为圆形钝角的阳极电极层，然后再将钝化层去除。例如阳极电极层可以为氧化铟锡。
根据本实施的有机发光二极管，其中阳极电极层的边角为圆形钝角，能够使得有机电致发光层完全覆盖所述阳极电极层，防止阴阳极的搭接造成的短路，同时也不需要像素定义层来实现阴极层与阳极电极层的隔离，提高了有机发光二极管的开口率和良率。
注意，上述仅为本公开的较佳实施例及所运用技术的原理。本领域技术人员应当理解，本公开不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本公开的保护范围。因此，虽然通过以上实施例对本公开进行了较为详细的说明，但是本公开不仅仅限于以上实施例，在不脱离本公开构思的情况下，还可以包括更多其他等效实施例，而本公开的范围由所附的权利要求决定。

Claims (10)

  1. 一种有机发光二极管的制备方法，包括：
    提供基板；
    在所述基板上形成阳极电极层；
    在所述阳极电极层上形成钝化层，所述钝化层的面积小于所述阳极电极层的面积；
    对所述阳极电极层和所述钝化层进行离子轰击；
    去除所述钝化层。
  2. 如权利要求1所述的有机发光二极管的制备方法，还包括：
    在所述阳极电极层上形成有机电致发光层，
    在所述有机电致发光层上形成阴极层。
  3. 如权利要求1或3所述的有机发光二极管的制备方法，所述有机发光二极管的制备方法还包括：
    在所述基板与所述阳极电极层之间形成像素驱动电路结构层。
  4. 如权利要求1至3中任一所述的有机发光二极管的制备方法，所述阳极电极层的边角的坡度角在10～60度之间。
  5. 如权利要求1至4中任一所述的有机发光二极管的制备方法，所述钝化层的面积是所述阳极电极层面积的90％。
  6. 一种有机发光二极管，包括：
    基板；
    阳极电极层，设置在所述基板之上，所述阳极电极层的边角为圆形钝角；
    有机电致发光层，覆盖所述阳极电极层；
    阴极电极层，设置在所述有机电致发光层之上。
  7. 如权利要求6所述的有机发光二极管，所述阳极电极层的边角的坡度角在10～60度之间。
  8. 如权利要求6或7所述的有机发光二极管，所述阳极电极层的边角经过等离子处理。
  9. 如权利要求6至8中任一所述的有机发光二极管，所述阳极电极层为氧化铟锡。
  10. 如权利要求6至9中任一所述的有机发光二极管，所述有机发光二极管还包括像素驱动电路结构层，形成在所述基板与所述阳极电极层之间。
PCT/CN2018/078650 2017-05-15 2018-03-11 有机发光二极管及其制备方法 WO2018210040A1 (zh)

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
CN107086274A (zh) * 2017-05-15 2017-08-22 京东方科技集团股份有限公司 有机发光二极管及其制备方法
CN110164944A (zh) * 2019-06-03 2019-08-23 京东方科技集团股份有限公司 显示基板及其制造方法、掩膜版、显示装置
CN113871436A (zh) * 2021-09-18 2021-12-31 深圳市华星光电半导体显示技术有限公司 阵列基板、阵列基板的制作方法以及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01306581A (ja) * 1988-06-06 1989-12-11 Seiko Instr Inc 薄膜のエッチング方法
US20050110021A1 (en) * 2003-11-22 2005-05-26 Park Sang-Il Active matrix organic light emitting display (OLED) and method of fabrication
CN101076869A (zh) * 2005-01-11 2007-11-21 出光兴产株式会社 透明电极及其制造方法
CN105449116A (zh) * 2015-11-18 2016-03-30 Tcl集团股份有限公司 Ito基板及制备方法、oled器件及制备方法
CN107086274A (zh) * 2017-05-15 2017-08-22 京东方科技集团股份有限公司 有机发光二极管及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100527193B1 (ko) * 2003-06-03 2005-11-08 삼성에스디아이 주식회사 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법
KR101039029B1 (ko) * 2003-11-14 2011-06-03 삼성전자주식회사 유기 발광 디스플레이
TWI489519B (zh) * 2004-04-28 2015-06-21 Semiconductor Energy Lab 基板上配線，半導體裝置及其製造方法
KR20070093098A (ko) 2005-01-11 2007-09-17 이데미쓰 고산 가부시키가이샤 투명 전극 및 그의 제조 방법
JP2006194926A (ja) 2005-01-11 2006-07-27 Idemitsu Kosan Co Ltd 透明電極の製造方法
JP2006196201A (ja) 2005-01-11 2006-07-27 Idemitsu Kosan Co Ltd 透明電極の製造方法
CN102202992A (zh) * 2008-11-14 2011-09-28 东京毅力科创株式会社 基板处理系统
DE102010047642A1 (de) * 2010-10-06 2012-04-12 Li-Tec Battery Gmbh Verfahren zum Herstellen einer Elektrode
CN106449717B (zh) * 2016-11-14 2020-08-18 京东方科技集团股份有限公司 有机电致发光器件基板、显示装置及制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01306581A (ja) * 1988-06-06 1989-12-11 Seiko Instr Inc 薄膜のエッチング方法
US20050110021A1 (en) * 2003-11-22 2005-05-26 Park Sang-Il Active matrix organic light emitting display (OLED) and method of fabrication
CN101076869A (zh) * 2005-01-11 2007-11-21 出光兴产株式会社 透明电极及其制造方法
CN105449116A (zh) * 2015-11-18 2016-03-30 Tcl集团股份有限公司 Ito基板及制备方法、oled器件及制备方法
CN107086274A (zh) * 2017-05-15 2017-08-22 京东方科技集团股份有限公司 有机发光二极管及其制备方法

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