WO2018205694A1 - 波长转换装置和激光荧光转换型光源 - Google Patents

波长转换装置和激光荧光转换型光源 Download PDF

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WO2018205694A1
WO2018205694A1 PCT/CN2018/074749 CN2018074749W WO2018205694A1 WO 2018205694 A1 WO2018205694 A1 WO 2018205694A1 CN 2018074749 W CN2018074749 W CN 2018074749W WO 2018205694 A1 WO2018205694 A1 WO 2018205694A1
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layer
wavelength conversion
conversion device
silver reflective
reflective layer
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田梓峰
许颜正
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Shenzhen Appotronics Corp Ltd
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Appotronics Corp Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors

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  • the utility model relates to a laser fluorescence conversion type light source, in particular to a wavelength conversion device.
  • the laser fluorescence conversion type light source includes a laser, a wavelength conversion device and an output end, wherein the substrate layer, the reflective layer and the light emitting layer are usually stacked in sequence.
  • a wavelength conversion device composed of (hereinafter, referred to as "three-layer stacked structure") generates desired color light under excitation of a laser, and is output via an output terminal. It can be seen that the wavelength conversion device is a key component of the laser fluorescence conversion type light source, and its performance directly determines the advantages and disadvantages of the laser fluorescence conversion type light source.
  • the wavelength conversion device is a key component of the laser fluorescence conversion type light source, and its performance directly determines the advantages and disadvantages of the laser fluorescence conversion type light source.
  • the wavelength conversion device is a key component of the laser fluorescence conversion type light source, and its performance directly determines the advantages and disadvantages of the laser fluorescence conversion type light source.
  • the wavelength conversion device is a key component of the laser fluorescence conversion type light source, and its performance directly determine
  • the diffuse reflection layer is entirely formed by sintering of an inorganic material, and has high heat resistance, but the thermal conductivity of the scattering particles and the glass powder as a constituent material thereof is low, and in order to ensure a high reflectance, the sintered structure of the diffuse reflection layer is usually It is a porous structure with high thermal resistance, which is disadvantageous for the reliability of the wavelength conversion device under the excitation of the laser light emitted by the high power laser and the improvement of the luminance.
  • the dense metal reflective layer is formed by mixing and sintering a metal paste, a glass frit and an organic carrier, and can achieve higher reflectance and lower thermal resistance.
  • the metal material of such a dense metal reflective layer is usually aluminum or silver. Since silver has a much higher reflectance in the visible light band than aluminum, a silver reflective layer is preferred.
  • aluminum nitride ceramics have become a popular material for thermal conductive substrate layers in recent years. It has good mechanical properties and has a higher flexural strength than alumina ceramics. It also has a high thermal conductivity, which is more than five times that of aluminum oxide ceramics.
  • the aluminum nitride substrate is an optimum heat conductive substrate other than metal.
  • the aluminum nitride ceramics also have high temperature resistance characteristics, so that the aluminum nitride substrate has high thermal stability.
  • the aluminum nitride substrate is used as a substrate layer and the silver reflective layer described above to form a stacked structure
  • the adhesion between the silver and the aluminum nitride substrate is poor, peeling may occur in actual use, resulting in a decrease in product reliability.
  • the adhesion of the silver reflective layer can be improved by the sintering method in which the glass powder and the silver powder are mixed and sintered on the aluminum nitride substrate, the silver reflective layer contains a glass structure, so that the reflectance does not reach the effect of pure silver reflection and heat. The resistance is higher and the heat conduction effect is poor.
  • An object of the present invention is to provide a wavelength conversion device having high reflectance, thermal conductivity, and long-term reliability, and a laser fluorescence conversion type light source including the same.
  • a wavelength conversion device includes a substrate layer, a silver reflective layer, and a fluorescent layer which are sequentially stacked, and the silver reflective layer is for reflecting a light beam emitted from the fluorescent layer.
  • the substrate layer is an aluminum nitride substrate
  • the wavelength conversion device further includes an adhesive layer disposed between the substrate layer and the silver reflective layer, and the adhesive layer Firmly bonded to the substrate layer and the silver reflective layer.
  • the fluorescent layer encapsulates an upper surface and a sidewall of the silver reflective layer such that the silver reflective layer is sealed by the fluorescent layer and the bonding layer.
  • the bonding layer may be a glass bonding layer.
  • the glass bonding layer has a thickness of 0.01 to 30 ⁇ m. Coefficient of thermal expansion of glass used to form the adhesive layer of glass frit 0.6 ⁇ 10 -6 /K ⁇ 8.6 ⁇ 10 -6 / K . Further, it is preferred that the glass frit has a glass softening point temperature higher than 900 °C.
  • the bonding layer may be an aluminum oxide layer.
  • the aluminum oxide layer may have a thickness of 0.01 to 30 ⁇ m.
  • the silver reflective layer has a close packed structure of silver particles.
  • the silver reflective layer has a thickness of 1 to 100 ⁇ m.
  • the silver powder raw material for forming the silver reflective layer is preferably spherical or flake-shaped, and may have a particle diameter ranging from 0.01 to 20 ⁇ m.
  • the silver powder material may have a tap density of greater than 2 g/cm 3 .
  • a laser fluorescence conversion type light source includes the above-described wavelength conversion device and a laser device serving as an incident light source of the wavelength conversion device.
  • the utility model solves the problem that the adhesion between the silver reflective layer and the aluminum nitride substrate is poor by providing an adhesive layer between the aluminum nitride substrate layer and the silver reflective layer.
  • the wavelength conversion device and the laser fluorescence conversion type light source of the present invention have high reflectance of the silver reflective layer and high thermal conductivity of the aluminum nitride substrate, and the high thermal conductivity of the silver reflective layer further improves the heat dissipation and heat dissipation effect. Therefore, the wavelength conversion device and the laser fluorescence conversion type light source according to the present invention can have high reflectance, thermal conductivity, and long-term stability.
  • FIG. 1 is a cross-sectional view illustrating a wavelength conversion device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a wavelength conversion device in accordance with another embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a wavelength conversion device according to the present invention.
  • the wavelength conversion device according to an embodiment of the present invention has a four-layer stack structure, that is, an aluminum nitride substrate layer 4 stacked in order from bottom to top. , a bonding layer 3, a silver reflective layer 2, and a fluorescent layer 1.
  • the aluminum nitride substrate layer 4 is an aluminum nitride ceramic substrate having a high thermal conductivity and has a thickness of 1 to 1000 ⁇ m.
  • the silver reflective layer 2 serves to reflect the light beam emitted from the fluorescent layer 1, and is formed at least by mixing silver powder and an organic carrier into a silver paste and sintering.
  • the silver reflective layer may also be formed by mixing silver powder, an organic vehicle, and glass frit into a silver paste and sintering.
  • the silver reflective layer 2 has a close-packed structure of silver particles.
  • the organic vehicle may be any suitable organic vehicle known, for example, an organic vehicle which may be a mixed solution of ethyl cellulose, terpineol, butyl carbitol, or butyl carbitol.
  • the thickness of the silver reflective layer 2 is in the range of 1 to 100 ⁇ m, preferably 2 to 50 ⁇ m, and more preferably 5 to 30 ⁇ m. In the case where the thickness of the silver reflective layer is less than 1 ⁇ m, the silver paste process is not easy to control; in the case where the thickness of the silver reflective layer is greater than 100 ⁇ m, it is disadvantageous to obtain a dense and flat silver reflective layer surface.
  • the particle size of the raw silver powder is in the range of 0.01 to 20 ⁇ m, the silver powder having a particle diameter of less than 0.01 ⁇ m is not easily dispersed, and the surface roughness of the silver paste prepared by the silver powder having a particle diameter of more than 20 ⁇ m is not easily controlled, and the silver powder having a larger particle diameter is less likely to be
  • the surface of the aluminum nitride substrate is sintered densely, and the adhesion is poor.
  • the raw material silver powder is preferably spherical or flake-shaped, and the two shape particles are advantageous for forming a silver powder close-packed structure, so that the silver reflective layer is more dense.
  • the raw silver powder has a tap density of more than 2 g/cm 3 , preferably more than 4 g/cm 3 , more preferably more than 6 g/cm 3 .
  • the fluorescent layer 1 is formed by mixing and sintering a phosphor, a glass frit and an organic vehicle.
  • the phosphor preferably has yellow and green phosphors such as Lu 3 Al 5 O 12 :Ce 3+ , Y 3 Al 5 O 12 :Ce 3+ having a garnet structure.
  • the glass frit is preferably a borosilicate lead-free glass powder having high thermal stability.
  • the thickness of the fluorescent layer 1 is preferably in the range of 10 to 1000 ⁇ m.
  • the fluorescent layer 1 emits a laser light of a predetermined color under excitation of excitation light.
  • the adhesive layer 3 is provided between the aluminum nitride substrate layer 4 and the silver reflective layer 2, and the adhesive layer 3 and the aluminum nitride substrate layer 4 and the silver reflective layer 2 can be firmly bonded.
  • the bonding layer 3 may be an aluminum oxide layer.
  • Such an aluminum oxide layer can be formed on the aluminum nitride substrate 4 in any suitable manner known.
  • the bonding layer 3 may be an aluminum oxide layer obtained by heating the aluminum nitride substrate layer 4 to oxidize its surface.
  • the bonding layer 3 may be an aluminum oxide film formed on the surface of the aluminum nitride substrate 4 by a physical plating process, which includes, but is not limited to, vacuum evaporation and magnetron sputtering.
  • the thickness of the adhesive layer 3 formed of alumina may range from 0.01 to 30 ⁇ m, preferably from 0.1 to 20 ⁇ m, and still more preferably from 0.5 to 10 ⁇ m. Within the above thickness range, it is possible to ensure that the aluminum oxide layer has low thermal resistance while satisfying the convenience of carrying out the manufacturing process.
  • the bonding layer 3 may also be a glass bonding layer.
  • the glass bonding layer contains glass frit and an organic carrier.
  • the organic vehicle in the glass bonding layer may be any suitable organic carrier known, for example, ethyl cellulose, terpineol, butyl carbitol, butyl carbitol ester mixed organic vehicle.
  • the thickness of the glass bonding layer 3 may range from 0.01 to 30 ⁇ m, preferably from 0.1 to 20 ⁇ m, and still more preferably from 0.5 to 10 ⁇ m. Within the above thickness range, it is possible to ensure that the glass bonding layer 3 has a low thermal resistance while satisfying the convenience of carrying out the manufacturing process.
  • Thermal expansion coefficient of the glass frit used to form the adhesive layer close to the thermal expansion coefficient of aluminum nitride, i.e., the range of the thermal expansion coefficient of 0.6 * 10 -6 /K ⁇ 8.6*10 -6 / K , preferably 1.6 * 10 - 6 /K ⁇ 7.6*10 -6 / K, more preferably 2.6 * 10 -6 /K ⁇ 6.6*10 -6 / K .
  • the glass paste sintered at a high temperature on the aluminum nitride substrate has a small thermal stress with the aluminum nitride substrate after cooling, and can achieve better adhesion to the aluminum nitride substrate.
  • the silver paste forming the silver reflective layer exhibits a sintering behavior at temperatures above 700 °C. Since the coefficient of thermal expansion of silver is much higher than that of the glass frit and the aluminum nitride substrate of the glass bonding layer 3, the silver reflective layer applied to the glass bonding layer 3 exhibits more pronounced shrinkage during high-temperature sintering and cooling. Warpage may occur. Further studies have found that the higher the glass softening point temperature of the glass bonding layer 3, the lower the degree of warpage described above. When the glass softening point temperature Tf of the glass bonding layer 3 is higher than 900 ° C, the silver reflective layer does not substantially warp, and a tightly flat bond can be achieved on the glass bonding layer 3.
  • Fig. 2 shows a schematic cross-sectional view of another embodiment of a wavelength conversion device according to the invention.
  • the configuration of the wavelength conversion device according to this embodiment is substantially the same as that of the wavelength conversion device shown in FIG. 1, and the only difference is that in FIG. 2, the coating width of the fluorescent layer 1 is larger than that of the silver reflective layer 2. Coating width.
  • the fluorescent layer 1 is formed to wrap the upper surface and the side wall of the silver reflective layer 2. Therefore, in the present embodiment, the fluorescent layer 1 and the aluminum nitride substrate 4 completely seal the silver reflective layer 2 to be completely isolated from the external environment, preventing the silver reflective layer 2 from being blackened by vulcanization, further improving the device. Long-term stability.
  • the glass frit for forming the fluorescent layer, the glass frit for forming the silver reflective layer, and the glass frit for forming the glass adhesive layer may be the same or different, and any suitable glass powder known may be selected according to actual needs.
  • the organic carrier for forming the fluorescent layer, the organic carrier for forming the silver reflective layer, and the organic carrier for forming the glass bonding layer may be the same or different, and any suitable organic carrier known may be selected according to actual needs. .
  • the wavelength conversion device using the four-layer stacked structure according to the present invention can have better luminous efficiency and brightness.
  • Sample 1 and Sample 2 were stably illuminated for 3 min under the excitation conditions of the laser light emitted by the blue laser of different optical powers, and at the same time, the luminous fluxes of Samples 1 and 2 were respectively measured to evaluate the respective Luminous efficiency and brightness, wherein Sample 1 is a wavelength conversion device for sequentially stacking an aluminum nitride substrate layer 4, a glass bonding layer 3, a silver reflective layer 2, and a fluorescent layer 1 according to the present invention, and Sample 2 is a prior art A wavelength conversion device (not shown) in which an aluminum nitride substrate layer, a diffuse reflection layer, and a fluorescent layer are sequentially stacked. The experimental results are shown in Table 1 below.
  • the wavelength conversion device has better luminous efficiency and brightness while having higher reflectance, thermal conductivity, and stability.
  • the laser fluorescence conversion type light source according to the present invention includes the above wavelength conversion device. Further, the laser fluorescence conversion type light source is further provided with a laser device. The laser device is used as an incident light source of the wavelength conversion device.

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  • General Engineering & Computer Science (AREA)
  • Optical Elements Other Than Lenses (AREA)
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Abstract

一种波长转换装置和激光荧光转换型光源。波长转换装置包括依次堆叠的基板层(4)、银反射层(2)和荧光层(1)，银反射层(2)用于反射从荧光层(1)中出射的光束。基板层(4)为氮化铝基板，并且波长转换装置还包括：粘接层(3)，设置在基板层(4)与银反射层(2)之间，牢固地粘接至基板层(4)和银反射层(2)。激光荧光转换型光源包含波长转换装置和用作入射光源的激光装置。该波长转换装置能够实现较高的反射率、热导率和长期稳定性。

Description

波长转换装置和激光荧光转换型光源 技术领域
本实用新型涉及激光荧光转换型光源，特别地涉及波长转换装置。
背景技术
作为目前各种激光光源中发展较快、应用较广的一种激光光源，激光荧光转换型光源包括激光器、波长转换装置和输出端，其中，通常由依次堆叠的基板层、反射层和发光层(以下，被称为“三层堆叠结构”)组成的波长转换装置在激光器的激发下产生需要的颜色光，并且经由输出端输出。可以看出，波长转换装置是激光荧光转换型光源的关键部件，其性能的高低直接决定激光荧光转换型光源的优劣。然而，随着激光器功率的提高，对于波长转换装置的反射率、热导率、稳定性等性能的要求也不断提高。当大功率激光器发出的激光照射波长转换装置时，波长转换装置的温度很快升高且热量迅速增加，因此需要其具有较高的反射率、热导率、稳定性等。
目前的波长转换装置中的反射层主要有两种类型：一种是采用白色散射粒子和玻璃粉混合烧结形成的漫反射层；另一种是采用致密金属(例如，银、铝)反射层。漫反射层全部由无机材料烧结形成，耐热性较高，但是作为其组成材料的散射粒子和玻璃粉的热导率较低，并且为了保证较高的反射率，漫反射层的烧结结构通常是多孔结构，热阻较高，从而不利于波长转换装置在高功率激光器发出的激光的激发下的可靠性和发光亮度的提高。虽然可以通过减薄漫反射层的厚度来降低热阻，但是这又会降低其反射率。因此，漫反射层在原理上无法确保同时具有较高的反射率、热导率、稳定性。致密金属反射层由金属浆料、玻璃粉和有机载体混合烧结形成，可以实现较高的反射率且热阻较低。这样的致密金属反射层的金属原料通常采用铝或银。由于银在可见光波段的反射率远高于铝，因而银反射层是优选的。
另外，氮化铝陶瓷近年来成为导热基板层的热门材料。其具有良好的机械性能，抗折强度高于氧化铝陶瓷。其还具有高的热导率，是氧化 铝陶瓷的5倍以上。但就导热效果而言，氮化铝基板是除金属以外的最佳导热基板。另外，氮化铝陶瓷还具有耐高温特性，使得氮化铝基板具有很高的热稳定性。然而，当氮化铝基板作为基板层与上述的银反射层组成堆叠结构时，由于银与氮化铝基板的烧结附着力较差，在实际使用中会出现剥离的现象，导致产品可靠性降低。虽然通过采用玻璃粉和银粉混合烧结于氮化铝基板的烧结方法能够提高银反射层的附着力，但这种银反射层由于含有玻璃结构，使得反射率达不到纯银反射的效果而且热阻较高，导热效果较差。
实用新型内容
本实用新型的目的是提出一种具有较高的反射率、热导率和长期可靠性的波长转换装置以及含有该波长转换装置的激光荧光转换型光源。
根据本实用新型的实施例，提供了一种波长转换装置。所述波长转换装置包括依次堆叠的基板层、银反射层和荧光层，所述银反射层用于反射从所述荧光层中出射的光束。其中，所述基板层为氮化铝基板，并且所述波长转换装置还包括粘接层，所述粘接层设置在所述基板层与所述银反射层之间，并且所述粘接层牢固地粘接至所述基板层和所述银反射层。
优选地，所述荧光层包裹所述银反射层的上表面和侧壁，使得所述银反射层被所述荧光层和所述粘接层密封。
所述粘接层可以是玻璃粘接层。所述玻璃粘接层的厚度为0.01～30μm。用于形成所述玻璃粘接层的玻璃粉的热膨胀系数为0.6×10 -6/K～8.6×10 -6/K。此外，所述玻璃粉的玻璃软化点温度高于900℃是优选的。
所述粘接层可以是氧化铝层。所述氧化铝层的厚度可以为0.01～30μm。
优选地，所述银反射层具有银颗粒的密堆积结构。所述银反射层的厚度为1～100μm。用于形成所述银反射层的银粉原料优选为球状或片状，并且粒径范围可以为0.01～20μm。所述银粉原料的振实密度可以大于2g/cm 3。
根据本实用新型的另一实施例，提供了一种激光荧光转换型光源。 所述激光荧光转换型光源包括上述波长转换装置以及用作所述波长转换装置的入射光源的激光装置。
本实用新型通过在氮化铝基板层与银反射层之间设置粘接层，解决了银反射层与氮化铝基板粘接性能差的问题。另外，本实用新型的波长转换装置和激光荧光转换型光源具有银反射层的高反射率和氮化铝基板的高导热率，且银反射层的高导热率进一步提高了导热散热效果。因此，根据本实用新型的波长转换装置和激光荧光转换型光源能够具有较高的反射率、热导率和长期稳定性。
附图说明
图1是示意了根据本实用新型的一个实施方式的波长转换装置的横截面图。
图2是示意了根据本实用新型的另一实施方式的波长转换装置的横截面图。
具体实施方式
下面，将参照附图详细说明根据本实用新型的波长转换装置。
图1是示出了根据本实用新型的波长转换装置的一个实施方式的示意性截面图。如图1所示，与现有技术中的三层堆叠结构不同，根据本实用新型的一个实施方式的波长转换装置具有四层堆叠结构，即从下到上依次堆叠的氮化铝基板层4、粘接层3、银反射层2和荧光层1。
氮化铝基板层4是具有高导热率的氮化铝陶瓷基板，其厚度为1～1000μm。
银反射层2用于反射从荧光层1中出射的光束，并且至少是由银粉和有机载体混合成银浆料并经过烧结而形成的。例如，银反射层还可以是由银粉、有机载体和玻璃粉混合成银浆料并经过烧结而形成的。银反射层2具有银颗粒的密堆积结构。这里，应当理解的是，当由银浆烧结形成的银反射层的密度达到了10g/cm 3以上时，即可被称为银颗粒的“密堆积结构”。有机载体可以是已知的任意合适的有机载体，例如，可以是乙基纤维素、松油醇、丁基卡比醇、丁基卡比醇酯混合溶解的有机载体。银反射层2的厚度范围为1～100μm，优选为2～50μm，更加优选为5～30μm。 在银反射层厚度小于1μm情况下，银浆工艺不容易控制；在银反射层厚度大于100μm情况下，不利于获得致密平整的银反射层表面。原料银粉的粒径范围是0.01～20μm，粒径小于0.01μm的银粉不容易分散，粒径大于20μm的银粉制备的银浆表面平整度不容易控制，并且粒径越大的银粉越不容易在氮化铝基板表面上烧结致密，附着力越差。原料银粉优选为球形或者片状，这两种形状颗粒有利于形成银粉密堆积结构，使得银反射层更致密。原料银粉的振实密度大于2g/cm 3，优选大于4g/cm 3，更优选大于6g/cm 3。
荧光层1是由荧光粉、玻璃粉和有机载体混合烧结形成。荧光粉优选具有石榴石结构的Lu 3Al 5O 12:Ce 3+、Y 3Al 5O 12:Ce 3+等黄色和绿色荧光粉。玻璃粉优选具有高热稳定性的硼硅酸盐无铅玻璃粉。荧光层1的厚度范围优选为10～1000μm。荧光层1在激发光的激发下发出预定颜色的受激光。
粘接层3设置于氮化铝基板层4与银反射层2之间，粘接层3与氮化铝基板层4和银反射层2均能够牢固地粘接。例如，粘接层3可以是氧化铝层。可以采用已知的任意适合的方式在氮化铝基板4上形成这样的氧化铝层。例如，粘接层3可以是通过加热氮化铝基板层4使其表面氧化而获得的氧化铝层。或者，粘接层3可以是采用物理镀膜工艺形成在氮化铝基板4表面上的氧化铝膜，这里所述的物理镀膜工艺包括但不限于真空蒸镀和磁控溅镀。由氧化铝形成的粘接层3的厚度范围可以是0.01～30μm，优选为0.1～20μm，更进一步优选为0.5～10μm。在上述厚度范围内，能够在满足便利地实施制造工艺的前提下，确保氧化铝层具有低的热阻。
可替代地，粘接层3也可以为玻璃粘接层。玻璃粘接层中含有玻璃粉和有机载体。玻璃粘接层中的有机载体可以是已知的任意合适的有机载体，例如，可以是乙基纤维素，松油醇，丁基卡比醇，丁基卡比醇酯混合溶解的有机载体。玻璃粘接层3的厚度范围可以是0.01～30μm，优选为0.1～20μm，更进一步优选为0.5～10μm。在上述厚度范围内，能够在满足便利地实施制造工艺的前提下，确保玻璃粘接层3具有低的热阻。用于形成玻璃粘接层的玻璃粉的热膨胀系数接近氮化铝的热膨胀系数， 即其热膨胀系数的范围为0.6*10 -6/K～8.6*10 -6/K，优选为1.6*10 -6/K～7.6*10 -6/K，更优选为2.6*10 -6/K～6.6*10 -6/K。这样在氮化铝基板上高温烧结的玻璃浆料在冷却后与氮化铝基板的热应力小，能够实现与氮化铝基板的更好粘接。另外，研究发现，形成银反射层的银浆在700℃以上的温度下就会明显出现烧结行为。由于银的热膨胀系数相对于玻璃粘接层3的玻璃粉和氮化铝基板高很多，因此涂覆于玻璃粘接层3上的银反射层在高温烧结冷却过程中会出现更明显的收缩而可能发生翘曲。进一步研究发现，玻璃粘接层3的玻璃软化点温度越高，上述翘曲的程度就越低。当玻璃粘接层3的玻璃软化点温度Tf高于900℃时，银反射层基本不发生翘曲，能够在玻璃粘接层3上实现紧密平整的粘接。
图2示出了根据本实用新型的波长转换装置的另一实施方式的示意性截面图。根据该实施方式的波长转换装置的构造与图1所示的波长转换装置的构造基本相同，两者的不同之处仅在于：在图2中，荧光层1的涂覆宽度大于银反射层2的涂覆宽度。这样，荧光层1被形成为包裹住银反射层2的上表面和侧壁。因此，在本实施方式中，荧光层1和氮化铝基板4将银反射层2完全密封，使其与外部环境完全隔离，防止了银反射层2因为硫化而发黑，进一步提高了装置的长期稳定性。
应当理解的是，上述实施方式仅是示例性的而非限制性的。例如，用于形成荧光层的玻璃粉、用于形成银反射层的玻璃粉和用于形成玻璃粘接层的玻璃粉可以相同或不同，并可以根据实际需要选择已知的任意适合的玻璃粉。例如，用于形成荧光层的有机载体、用于形成银反射层的有机载体和用于形成玻璃粘接层的有机载体可以相同或不同，并可以根据实际需要选择已知的任意适合的有机载体。
另外，采用根据本实用新型的四层堆叠结构的波长转换装置均能够具有较好的发光效率和亮度。为了证明有益效果且便于测量记录，在不同光功率的蓝光激光器发出的激光的激发条件下，使样品1和样品2稳定发光3min，与此同时，分别测量样品1和样品2的光通量来评价各自的发光效率和亮度，其中，样品1是根据本实用新型的依次堆叠氮化铝基板层4、玻璃粘接层3、银反射层2和荧光层1的波长转换装置，样品2是现有技术中的依次堆叠氮化铝基板层、漫反射层和荧光层的波长转换 装置(未图示)。实验结果如下面的表1所示。
表1 样品1和样品2的实验结果
光功率/W 样品2的光通量/Lm 样品1的光通量/Lm
4.6 1163.1 1193.3
7 1714.2 1749.0
9.3 — 2300.7
从表1中看出，在4.6W光功率的蓝光激光器发出的激光的激发条件下，样品1的发光效率相比样品2的发光效率提高了2.6％；在7W光功率的蓝光激光器发出的激光的激发条件下，样品1的发光效率相比样品2的发光效率提高了2.0％；且随着光功率升高到9.3W，样品2的光通量甚至出现下降现象，而样品1的光通量进一步增加。因此，根据本实用新型的波长转换装置在具有较高的反射率、热导率和稳定性的同时，还具有更好的发光效率和亮度。
根据本实用新型的激光荧光转换型光源包含上述波长转换装置。另外，激光荧光转换型光源还设置有激光装置。所述激光装置用作所述波长转换装置的入射光源。
尽管在上面已经参照附图说明了根据本实用新型的波长转换装置和激光荧光转换型光源，但是本实用新型不限于此，且本领域技术人员应理解，在不偏离本实用新型随附权利要求书限定的实质或范围的情况下，可以做出各种改变、组合、次组合以及变型。

Claims (10)

  1. 一种波长转换装置，包括依次堆叠的基板层(4)、银反射层(2)和荧光层(1)，所述银反射层(2)用于反射从所述荧光层(1)中出射的光束，
    其特征在于，所述基板层(4)为氮化铝基板，并且
    所述波长转换装置还包括：
    粘接层(3)，所述粘接层(3)设置在所述基板层(4)与所述银反射层(2)之间，并且所述粘接层(3)牢固地粘接至所述基板层(4)和所述银反射层(2)。
  2. 根据权利要求1所述的波长转换装置，其特征在于，所述荧光层(1)包裹所述银反射层(2)的上表面和侧壁，使得所述银反射层(2)被所述荧光层(1)和所述粘接层(3)密封。
  3. 根据权利要求1或2所述的波长转换装置，其特征在于，所述粘接层(3)是玻璃粘接层。
  4. 根据权利要求3所述的波长转换装置，其特征在于，所述玻璃粘接层的厚度为0.01～30μm。
  5. 根据权利要求3所述的波长转换装置，其特征在于，形成所述玻璃粘接层的玻璃粉的热膨胀系数为0.6×10 -6/K～8.6×10 -6/K。
  6. 根据权利要求3所述的波长转换装置，其特征在于，形成所述玻璃粘接层的玻璃粉的玻璃软化点温度高于900℃。
  7. 根据权利要求1或2所述的波长转换装置，其特征在于，所述粘接层(3)是氧化铝层。
  8. 根据权利要求7所述的波长转换装置，其特征在于，所述氧化铝层的厚度为0.01～30μm。
  9. 根据权利要求1或2所述的波长转换装置，其特征在于，所述银反射层(2)具有银颗粒的密堆积结构。
  10. 一种激光荧光转换型光源，其特征在于，所述激光荧光转换型光源包括激光装置和如权利要求1至9中任一项所述的波长转换装置，所述激光装置用作所述波长转换装置的入射光源。
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