WO2018196071A1 - 一种物理溅射成膜装置及方法 - Google Patents

一种物理溅射成膜装置及方法 Download PDF

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WO2018196071A1
WO2018196071A1 PCT/CN2017/085839 CN2017085839W WO2018196071A1 WO 2018196071 A1 WO2018196071 A1 WO 2018196071A1 CN 2017085839 W CN2017085839 W CN 2017085839W WO 2018196071 A1 WO2018196071 A1 WO 2018196071A1
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Prior art keywords
target
resistance value
film forming
physical sputtering
sputtering film
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English (en)
French (fr)
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刘思洋
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/539,816 priority Critical patent/US10378101B2/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control

Definitions

  • the present invention relates to the field of substrate film formation, and more particularly to a physical sputtering film forming apparatus and method.
  • a metal film of Al, Mo, Ti, Cu, etc., and a non-metal film such as ITO or IGZO on the glass substrate, which is usually completed by a physical weather deposition machine (PVD); PVD
  • PVD physical weather deposition machine
  • the working principle is to use the Ar ion in the plasma to bombard the target, sputter the target atom, transfer it to the surface of the glass substrate to complete the deposition of the film layer; the machine mounts the corresponding target according to the needs of the deposited film layer.
  • the target is continuously consumed as the use time is extended. At present, the target material on the machine can not be found in time, and the target is easily broken down, which affects the backboard and the product. In order to prevent this, it is necessary to Keep abreast of the consumption of the target.
  • the physical sputtering film forming device of the invention has the advantages of simple structure, real-time monitoring of the consumption of the target material, effectively avoiding the back plate damage and product abnormality caused by the target material breakdown, improving the product yield, and also improving the target use efficiency and avoiding The use of the target is not used to cause material waste.
  • the present invention provides a physical sputtering film forming apparatus, wherein the physical sputtering film forming apparatus comprises:
  • a substrate table disposed in the cavity, wherein a substrate to be film formed is disposed thereon;
  • a target disposed in the cavity, disposed opposite to the substrate
  • At least one square resistance meter attached to the target for determining an actual resistance value of the target in real time
  • a control system is coupled to the square resistance meter.
  • a physical sputtering film forming apparatus as described above, comprising: an insulating needle bar and a resistance measuring probe sleeved in the insulating needle bar, wherein the insulating needle bar passes through the target back plate and The bonding layer is configured to connect the resistance measuring probe to the target.
  • a threshold resistance value of the target is set in the control system, and the control system acquires the actual resistance value measured by the square resistance meter And comparing the actual resistance value with the critical resistance value, the control system sends an alarm signal when the actual resistance value reaches the critical resistance value.
  • the physical sputtering film forming device of the invention has a simple structure, and a square resistance meter is connected to the target to realize real-time monitoring of the resistance of the target material, and the target material consumption condition is judged according to the resistance change, and the control system reminds when the target is about to be consumed. Replacing the target to avoid damage to the backing plate and product abnormalities caused by target breakdown, improve product yield, and improve the efficiency of target use, avoiding material waste caused by unused target.
  • the invention also provides a physical sputtering film forming method, which has a simple operation process, can effectively avoid the phenomenon of target breakdown during the film formation process of the substrate, ensures the product yield of the substrate, and effectively improves the target material.
  • the utilization rate avoids material waste caused by the unused use of the target.
  • the present invention provides a physical sputtering film forming method in which the above-described physical sputtering film forming apparatus is used, and the physical sputtering film forming method includes the following steps:
  • step S1 The physical sputtering film forming method as described above, wherein in step S1), the actual resistance value of the target is measured by a square resistance meter.
  • step S2 the actual resistance value is fed back to a control system, the control system sets the actual resistance value and a setting in the control system The critical resistance values are compared for comparison.
  • the physical sputtering film forming method of the invention has simple operation steps, can effectively avoid the phenomenon of target breakdown during the film formation process of the substrate, ensures the product yield of the substrate, and effectively improves the utilization rate of the target and avoids the target.
  • the material is not used to complete the waste of materials.
  • FIG. 1 is a schematic structural view of a physical sputtering film forming apparatus of the present invention
  • FIG. 2 is a schematic structural view of a target of the present invention
  • FIG. 3 is a schematic structural view of a target backing plate of the present invention.
  • Figure 4 is a schematic structural view of a bonding layer of the present invention.
  • Figure 5 is a schematic view showing the structure of the target of the present invention in combination with the target backing plate;
  • Figure 6 is a schematic view showing the connection structure of the target and the control system of the present invention.
  • FIG. 6 are respectively a schematic structural view of a physical sputtering film forming apparatus of the present invention, a schematic structural view of the target material, a schematic structural view of the target backing plate, a structural schematic view of the bonding layer, and a bonding state of the target material and the target backing plate.
  • the physical sputtering film forming apparatus of the present invention comprises a vacuum chamber 1, a substrate table 2, a target 3, a square resistance meter 4, an excitation source (not shown), and a control system 6 (also The substrate table 2 is disposed in the cavity 1.
  • the substrate table 2 is provided with a substrate 21 to be film-formed, and the target 3 is disposed in the cavity 1 and is disposed opposite to the substrate 21 (also Can be set at an angle to the substrate 21), the square resistance meter 4
  • the target 3 is connected for real-time measurement of the actual resistance value of the target 3, and the excitation source is used to bombard the target 3 to sputter the target atoms, thereby sputtering the target atoms onto the substrate 21, thereby on the substrate 21.
  • a film layer is formed thereon, and the control system 6 is connected to the square resistance meter 4.
  • the critical resistance value of the target 3 is set in the control system 6, the square resistance meter 4 measures the actual resistance value of a certain area of the target 3, and the square resistance meter 4 is measured.
  • the actual resistance value is fed back into the control system 6, and the control system 6 compares the actual resistance value with the critical resistance value.
  • the control system issues an alarm signal to replace the target.
  • the control system 6 may send a signal to the excitation source, stop the excitation of the excitation source to the target 3, and prepare to replace the corresponding new target 3, or the control system 6 may issue an alarm signal when the staff hears the alarm.
  • the worker stops the bombardment of the target 3 by the excitation source, and prepares to replace the corresponding new target 3, thereby effectively preventing the target from being broken, causing backboard damage and product abnormality, improving product yield, and improving the target.
  • Material use efficiency avoiding the waste of materials due to the completion of the target.
  • the square resistances 4 are respectively connected to the regions 34 of the two ends of the target 3, and since the target materials at both ends of the target 3 are consumed the fastest, the target first reaches the breakdown phenomenon. If the target is not broken down, the other areas of the target 3 do not reach the breakdown phenomenon.
  • the critical resistance of the target 3 is the resistance of the target immediately after the breakdown. Values in which the process of evacuating the cavity 1 are well known to those skilled in the art and will not be described in detail herein.
  • the target 3 is disposed on the target backing plate 31. Specifically, the target 3 is adhered to the target backing plate 31 through a bonding layer 32, thereby ensuring that the target 3 can It is stably disposed in the cavity 1.
  • the excitation source is a high-voltage high-frequency power source. After the vacuum state is reached in the cavity 1, a high voltage is applied between the target 3 and the substrate 21, and electrons and ions move at a high speed under high pressure, and the ion strikes the target. Materials, such as Ar ions hit the target, high-speed moving electrons and ions collide with gas molecules to generate more ions.
  • the target atoms (or target particles) are sputtered out and sputtered.
  • the resulting particles are filmed onto the film substrate.
  • the target 3 is continuously thinned, and the resistance value of the target 3 measured by the square resistance meter 4 also changes accordingly, and the critical resistance value is constantly approached, when the measured resistance value reaches the critical resistance value. It is considered that the target 3 is about to be consumed, and the target is considered to have reached the end point of consumption.
  • other excitation sources may be used in the present invention, and no specific limitation is imposed herein.
  • the square resistance meter 4 includes an insulating needle bar (not shown) and a resistance measuring probe 7 sleeved in the insulating needle bar, wherein the insulating needle bar passes through the target back plate 31 and the bonding layer 32 to connect the resistance measuring probe 7 to the target 3, with such a design, the resistance measuring probe 7 can be passed through
  • the bonding layer 32 is connected to the lower surface of one end portion of the target 3, and the surface of the resistance measuring probe 7 and the bonding layer 32 are not turned on, and the actual resistance value of the resistance of the bonding layer 32 to the resistance of the target 3 is prevented. interference.
  • the physical sputtering film forming apparatus of the present invention has a simple structure, and the two ends of the rear side of the target 3 are connected to the square resistance meter 4, and the square resistance meter 4 can measure the actual resistance value of the target surface in the area in real time. And the actual resistance value change is fed back to the control system 6, and the control system 6 compares the actual resistance value obtained by the feedback with the threshold resistance value (also referred to as the resistance end point value) set in the control system 6, when the measured When the actual resistance value of one of the ends reaches the critical resistance value, the target consumption is considered to reach the end point. At this time, the control system 6 issues an alarm signal, and the discharge is terminated (ie, the excitation source stops the bombardment of the target 3), and the replacement is reminded. Targets, thus achieving effective avoidance of target breakdown. It is to be noted here that the front side of the target 3 refers to the side on which the target source is excited by the excitation source, and the back side refers to the side opposite to the front side.
  • the present invention also provides a physical sputtering film forming method, which uses the above physical sputtering film forming apparatus in a substrate film forming process, wherein the physical sputtering film forming method comprises the following steps: S1): on a substrate to be film formed Measuring the actual resistance value of the target in real time during sputtering film formation; S2): comparing the actual resistance value with a critical resistance value of the target, and when the resistance value reaches the critical resistance value, signaling Replace the target.
  • the critical resistance value of the target is measured by a square resistance meter, that is, the resistance value of the target that has just been broken down is measured, and the electronic value is the critical resistance value of the corresponding target, and the critical resistance value is set at In the control system, a specific film formation process is performed.
  • the target and the substrate to be filmed are first placed at corresponding positions in the physical sputtering film forming device, and then the cavity is evacuated to achieve a vacuum state; when the cavity reaches a vacuum state, Adding a high voltage between the target and the substrate, electrons and ions move at high speed under high pressure, ions collide with the target, such as Ar ions hit the target, and high-speed moving electrons and ions collide with gas molecules to generate more ions, and ions collide. After the target, the target atoms are sputtered out, and the sputtered particles are formed on the film substrate to form a film.
  • the square resistance meter measures the resistance of the target in real time, and feeds back the measured resistance value to the control system.
  • the control system compares the actually measured resistance value with the critical resistance value, when the actual measured resistance value When the critical resistance value is about to be reached or just reached, the target is considered to be consumed. Due to the continuous thinning of the target during the film formation process, the resistance value of the target measured by the square resistance meter also changes accordingly. The measured resistance value continuously approaches the critical resistance value, and the measured resistance value is about to be reached. At the critical resistance value, the target is considered to be consumed.
  • the actual resistance values of the two ends of the target are respectively measured, and since the target has the fastest consumption at both ends, the target first reaches the breakdown phenomenon, and if the target here has not broken down yet, Phenomenon, the other areas of the target should also not reach the degree of breakdown, when the actual resistance value of either end of the two ends reaches the critical value
  • the control system issues an alarm signal to replace the target, that is, when the two ends of the measurement target obtain two actual resistance values, when one of the actual resistance values reaches the critical resistance value, the target consumption is considered When finished, the control system issues an alarm signal to replace the target.
  • the target is disposed on the target backing plate, specifically, the target is adhered to the target backing plate by the bonding layer, thereby ensuring that the target can be stably disposed within the cavity.
  • the square resistance meter comprises an insulating needle bar and a resistance measuring probe sleeved in the insulating needle bar, wherein the insulating needle rod passes through the target back plate and the bonding layer to connect the resistance measuring probe to the target,
  • the resistance measuring probe is connected to the lower surface of one end portion of the target through the adhesive layer, and the surface of the resistance measuring probe and the adhesive layer are not electrically connected, thereby avoiding adhesion layer resistance to the target resistance
  • the measured resistance of the actual resistance value, the resistance measurement probe is connected to the square resistance meter, so as to accurately measure the actual resistance value at both ends.
  • the physical sputtering film forming method of the invention has simple operation steps, can effectively avoid the phenomenon of target breakdown during the film formation process of the substrate, ensures the product yield of the substrate, and simultaneously improves the utilization rate of the target material and avoids the target material. Material waste is caused by unused use.

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Abstract

一种物理溅射成膜装置，包括真空的腔体（1）；设于真空的腔体（1）内的基板台（2），其上设有待成膜的基板（21）；设于真空的腔体（1）内的靶材（3），其与基板（21）相对设置；至少一个方阻计（4），其与靶材（3）相接以用于实时测定靶材的实际电阻值；激发源，其用于轰击靶材（3）使其溅射出靶材原子；控制系统（6），其与所述方阻计（4）相接。物理溅射成膜装置结构简单，能够实时监测靶材（3）的消耗情况，有效避免靶材（3）击穿造成背板（31）损伤及产品异常，提高产品良率，同时还可以提高靶材（3）使用效率，避免靶材（3）未使用完成造成材料浪费。

Description

一种物理溅射成膜装置及方法
相关申请的交叉引用
本申请要求享有于2017年4月27日提交的名称为“一种物理溅射成膜装置及方法”的中国专利申请CN201710298657.4的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及基板成膜领域，特别涉及物理溅射成膜装置及方法。
背景技术
在薄膜晶体管(TFT)基板制作过程中，需要在玻璃基板上沉积Al、Mo、Ti、Cu等金属膜以及ITO、IGZO等非金属膜，该制程通常使用物理气象沉积机(PVD)完成；PVD工作原理是利用电浆中的Ar离子，对靶材(target)进行轰击，溅射出靶材原子，转移到玻璃基板表面完成膜层的沉积；机台根据沉积膜层的需要安装相应的靶材，靶材随着使用时间的延长不断被消耗，目前机台上靶材消耗完毕无法及时发现，易发生靶材被击穿的状况，对背板和产品造成影响，为了防止该情况发生，需要及时掌握靶材的消耗情况。
为解决上述问题，有必要提出一种新的物理溅射成膜装置及方法。
发明内容
本发明的物理溅射成膜装置结构简单，能够实时监测靶材的消耗情况，有效避免靶材击穿造成背板损伤及产品异常，提高产品良率，同时还可以提高靶材使用效率，避免靶材未使用完成造成材料浪费。
为实现上述目的，本发明提出了一种物理溅射成膜装置，其中，所述物理溅射成膜装包括：
真空的腔体；
设于所述腔体内的基板台，其上设有待成膜的基板；
设于所述腔体内的靶材，其与所述基板相对设置；
至少一个方阻计，其与所述靶材相接以用于实时测定所述靶材的实际电阻值；
激发源，其用于轰击所述靶材使其溅射出靶材原子；
控制系统，其与所述方阻计相接。
如上所述的物理溅射成膜装置，其中，所述靶材设于靶材背板上。
如上所述的物理溅射成膜装置，其中，所述靶材通过粘结层粘附在所述靶材背板上。
如上所述的物理溅射成膜装置，其中，所述靶材的两端分别接有所述方阻计。
如上所述的物理溅射成膜装置，其中，包括绝缘针杆和套设于所述绝缘针杆内的电阻测量探针，其中，所述绝缘针杆穿过所述靶材背板以及所述粘结层以使所述电阻测量探针与所述靶材相连。
如中所述的物理溅射成膜装置，其中，所述控制系统内设定有所述靶材的临界电阻值，所述控制系统获取所述方阻计所测得的所述实际电阻值，并将所述实际电阻值与所述临界电阻值进行对比，在所述实际电阻值达到所述临界电阻值时，所述控制系统发出警报信号。
本发明的物理溅射成膜装置结构简单，通过在靶材上接有方阻计，以实现实时监控靶材的电阻，根据电阻变化判断靶材消耗状况，靶材即将消耗完成时控制系统提醒更换靶材，避免靶材击穿造成背板损伤及产品异常，提高产品良率，并可以提高靶材使用效率，避免靶材未使用完成造成材料浪费。
本发明还提供了一种物理溅射成膜方法，该方法操作过程简单，能够有效避免在基板成膜过程中靶材击穿的现象发生，保证基板的产品良率，同时还有效提高靶材的利用率，避免靶材未使用完成造成材料浪费。
为实现上述目的，本发明提供了一种物理溅射成膜方法，其中，使用上述的物理溅射成膜装置，所述物理溅射成膜方法包括以下步骤：
S1)：在待成膜的基板溅射成膜过程中实时测量靶材的实际电阻值；
S2)：将所述实际电阻值与所述靶材的临界电阻值对比，所述电阻值达到所述临界电阻值时，发出信号以更换所述靶材。
如上所述的物理溅射成膜方法，其中，在步骤S1)中，通过方阻计测量所述靶材的实际电阻值。
如上所述的物理溅射成膜方法，其中，在步骤S2)中，将所述实际电阻值反馈至控制系统，所述控制系统将所述实际电阻值与所述控制系统中设定的所述临界电阻值进行对比。
如上所述的物理溅射成膜方法，其中，分别测量所述靶材的两端的所述实际电阻值，当所述两端中的其中一端的所述实际电阻值达到所述临界电阻值时，所述控制系统发出警报信号以更换所述靶材。
本发明的种物理溅射成膜方法操作步骤简单，能够有效避免在基板成膜过程中靶材击穿的现象发生，保证基板的产品良率，同时还有效提高靶材的利用率，避免靶材未使用完成造成材料浪费。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代，只要能够达到本发明的目的。
附图说明
在此描述的附图仅用于解释目的，而不意图以任何方式来限制本发明公开的范围。另外，图中的各部件的形状和比例尺寸等仅为示意性的，用于帮助对本发明的理解，并不是具体限定本发明各部件的形状和比例尺寸。本领域的技术人员在本发明的教导下，可以根据具体情况选择各种可能的形状和比例尺寸来实施本发明。
图1为本发明的物理溅射成膜装置的结构示意图；
图2为本发明的靶材的结构示意图；
图3为本发明的靶材背板的结构示意图；
图4为本发明的粘结层的结构示意图；
图5为本发明的靶材与靶材背板结合状态下的结构示意图；
图6为本发明的本发明的靶材与控制系统的连接结构示意图。
具体实施方式
结合附图和本发明具体实施方式的描述，能够更加清楚地了解本发明的细节。但是，在此描述的本发明的具体实施方式，仅用于解释本发明的目的，而不能以任何方式理解成是对本发明的限制。在本发明的教导下，技术人员可以构想基于本发明的任意可能的变形，这些都应被视为属于本发明的范围，下面将结合附图对本发明作进一步说明。
图1至图6分别为本发明的物理溅射成膜装置的结构示意图、靶材的结构示意图、靶材背板的结构示意图、粘结层的结构示意图、靶材与靶材背板结合状态下的结构示意图和靶材与控制系统的连接结构示意图。
如图1所示，本发明的物理溅射成膜装置包括真空的腔体1、基板台2、靶材3、方阻计4、激发源(图中未示出)和控制系统6(也可以称为中央控制系统)，其中，基板台2设于腔体1内，基板台2上设有待成膜的基板21，靶材3设于腔体1内，其与基板21相对设置(也可以与基板21呈一角度设置)，方阻计4与 靶材3相接以用于实时测定靶材3的实际电阻值，激发源用于轰击靶材3使其溅射出靶材原子，从而使靶材原子溅射到基板21上，从而在基板21上形成了膜层，控制系统6与方阻计4相接。
具体地，在一具体实施例中，控制系统6内设定有靶材3的临界电阻值，方阻计4测定靶材3的某一区域的实际电阻值，并且方阻计4将测得的实际电阻值反馈到控制系统6内，控制系统6将实际电阻值与临界电阻值进行对比，当实际电阻值达到临界电阻值时，所述控制系统发出警报信号以更换所述靶材，此时可以是控制系统6给激发源发出信号，停止激发源对靶材3的激发，并准备更换相应的新的靶材3，也可以是控制系统6发出警报信号，当工作人员听到该警报信号时，工作人员停止激发源对靶材3的轰击，并准备更换相应的新的靶材3，从而有效防止靶材击穿造成背板损伤及产品异常，提高产品良率，并可以提高靶材使用效率，避免靶材未使用完成造成材料浪费。在一具体实施例中，靶材3的两端的区域34上分别接有方阻计4，由于靶材3的两端靶材消耗最快，此处靶材最先达到击穿的现象，若此处的靶材还未发生击穿现象，则靶材3的其他区域也未达到击穿的现象，在此需要说明的是靶材3的临界电阻值为靶材刚刚发生击穿时的电阻值，其中，对腔体1进行抽真空的过程为本领域技术人员所熟知，在此不再进行详细地赘述。
在一具体实施例中，靶材3设于靶材背板31上，具体地，靶材3通过粘结层32(bonding层)粘附到靶材背板31上，从而保证靶材3能够稳定地设置在腔体1内。在一具体实施例中，激发源为高压高频电源，在腔体1内达到真空状态后，在靶材3和基板21之间加高电压，电子和离子在高压下高速运动，离子撞击靶材，如Ar离子撞击靶材，高速运动的电子和离子与气体分子碰撞产生更多的离子，离子撞击靶材后，把靶材原子(或称为靶材粒子)溅射出去，被溅射出来的粒子到达成膜基板上成膜。在成膜过程中，靶材3不断变薄，方阻计4测得的靶材3的电阻值也相应产生变化，并不断趋近临界电阻值，当测得的电阻值达到临界电阻值时，则认为靶材3即将消耗完毕，即可认为靶材达到消耗终点，当然在本发明中也可以使用其他的激发源，在此不做具体的限制。
在一具体实施例中，方阻计4包括绝缘针杆(图中未示出)和套设于所述绝缘针杆内的电阻测量探针7，其中，绝缘针杆穿过靶材背板31以及粘结层32以使电阻测量探针7与靶材3相连，采用这样的设计可以实现电阻测量探针7穿过 粘结层32与靶材3的一端部的下表面连接，且电阻测量探针7的表面和粘结层32不导通，避免粘结层32电阻对靶材3电阻测量的实际电阻值的干扰。
本发明的物理溅射成膜装置结构简单，在靶材3上消耗最快的两个端部的背面连接方阻计4，方阻计4可以实时测量该区域靶材面的实际电阻值，并将实际电阻值变化反馈至控制系统6，控制系统6将反馈得到的实际电阻值跟控制系统6中设定的临界电阻值(也可称为电阻终点值)比对，当所测得的其中一个端部的实际电阻值达到临界电阻值时，即可认为靶材消耗达到终点，此时控制系统6发出报警信号，放电终止(即停止激发源对靶材3的轰击)，并提醒更换靶材，从而实现有效避免靶材击穿发生。需要在此说明的是，此处靶材3的正面是指被激发源激发产生靶材原子的一面，背面是指与正面相反的一面。
本发明还提供了一种物理溅射成膜方法，在基板成膜过程使用如上的物理溅射成膜装置，其中，物理溅射成膜方法包括以下步骤：S1)：在待成膜的基板溅射成膜过程中实时测量靶材的实际电阻值；S2)：将所述实际电阻值与所述靶材的临界电阻值对比，所述电阻值达到所述临界电阻值时，发出信号以更换所述靶材。
具体地，首先通过方阻计测量靶材的临界电阻值，即测量刚刚被击穿的靶材的电阻值，该电子值即为对应靶材的临界电阻值，并将临界电阻值设定在控制系统中，再进行具体的成膜过程。
在成膜过程中，先将靶材和待成膜的基板设于物理溅射成膜装置中的相应位置，再对腔体抽真空，使其达到真空状态；当腔体内达到真空状态后，在靶材和基板之间加高电压，电子和离子在高压下高速运动，离子撞击靶材，如Ar离子撞击靶材，高速运动的电子和离子与气体分子碰撞产生更多的离子，离子撞击靶材后，把靶材原子溅射出去，被溅射出来的粒子到达成膜基板上成膜。在成膜过程中，方阻计实时测量靶材的电阻，并将测量的电阻值反馈至控制系统，控制系统将实际测得的电阻值与临界电阻值进行对比，当实际测得的电阻值即将达到或刚刚达到该临界电阻值时，则认为靶材消耗完毕。由于成膜过程中，靶材不断变薄，方阻计测得的靶材的电阻值也相应产生变化，实际测得的电阻值并不断趋近临界电阻值，当测得的电阻值即将达到临界电阻值时，则认为靶材即将消耗完毕。
在一具体实施例中，分别测量靶材的两端的实际电阻值，由于靶材两端消耗最快，此处靶材最先达到击穿的现象，若此处的靶材还未发生击穿现象，则靶材的其他区域也应未达到击穿的程度，当两端中的任意一端的实际电阻值达到临界 电阻值时，控制系统发出警报信号以更换所述靶材，也即，当测量靶材的两端得到两个实际电阻值，当其中一个实际电阻值达到临界电阻值时，即认为靶材消耗完毕，此时控制系统发出警报信号以更换所述靶材。
在一具体实施例中，靶材设于靶材背板上，具体地，靶材通过粘结层粘附到靶材背板上，从而保证靶材能够稳定地设置在腔体内。方阻计包括绝缘针杆和套设于所述绝缘针杆内的电阻测量探针，其中，绝缘针杆穿过靶材背板以及粘结层以使电阻测量探针与靶材相连，采用这样的设计可以实现，电阻测量探针穿过粘附层与靶材的一端部的下表面连接，且电阻测量探针的表面和粘附层不导通，避免粘附层电阻对靶材电阻测量的实际电阻值的干扰，电阻测量探针与方阻计相接，从而实现准确地测量两端部上的实际电阻值。
本发明的物理溅射成膜方法操作步骤简单，能够有效避免在基板成膜过程中靶材击穿的现象发生，保证基板的产品良率，同时还有效提高靶材的利用率，避免靶材未使用完成造成材料浪费。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (13)

  1. 一种物理溅射成膜装置，其中，所述物理溅射成膜装包括：
    真空的腔体；
    设于所述腔体内的基板台，其上设有待成膜的基板；
    设于所述腔体内的靶材，其与所述基板相对设置；
    至少一个方阻计，其与所述靶材相接以用于实时测定所述靶材的实际电阻值；
    激发源，其用于轰击所述靶材使其溅射出靶材原子；
    控制系统，其与所述方阻计相接。
  2. 如权利要求1所述的物理溅射成膜装置，其中，所述靶材设于靶材背板上。
  3. 如权利要求2所述的物理溅射成膜装置，其中，所述靶材通过粘结层粘附在所述靶材背板上。
  4. 如权利要求1所述的物理溅射成膜装置，其中，所述靶材的两端分别接有所述方阻计。
  5. 如权利要求3所述的物理溅射成膜装置，其中，所述方阻计包括绝缘针杆和套设于所述绝缘针杆内的电阻测量探针，其中，所述绝缘针杆穿过所述靶材背板以及所述粘结层以使所述电阻测量探针与所述靶材相连。
  6. 如权利要求1所述的物理溅射成膜装置，其中，所述控制系统内设定有所述靶材的临界电阻值，所述控制系统获取所述方阻计所测得的实际电阻值，并将所述实际电阻值与所述临界电阻值进行对比，在所述实际电阻值达到所述临界电阻值时，所述控制系统发出警报信号。
  7. 一种物理溅射成膜方法，其中，使用一种物理溅射成膜装置，所述物理溅射成膜装置包括：
    真空的腔体；
    设于所述腔体内的基板台，其上设有待成膜的基板；
    设于所述腔体内的靶材，其与所述基板相对设置；
    至少一个方阻计，其与所述靶材相接以用于实时测定所述靶材的实际电阻值；
    激发源，其用于轰击所述靶材使其溅射出靶材原子；
    控制系统，其与所述方阻计相接；
    其中，所述物理溅射成膜方法包括以下步骤：
    S1)：在待成膜的基板溅射成膜过程中实时测量靶材的实际电阻值；
    S2)：将所述实际电阻值与所述靶材的临界电阻值对比，所述电阻值达到所述临界电阻值时，发出信号以更换所述靶材。
  8. 如权利要求7所述的物理溅射成膜方法，其中，在步骤S1)中，通过方阻计测量所述靶材的实际电阻值。
  9. 如权利要求8所述的物理溅射成膜方法，其中，在步骤S2)中，将所述实际电阻值反馈至控制系统，所述控制系统将所述实际电阻值与所述控制系统中设定的所述临界电阻值进行对比。
  10. 如权利要求9所述的物理溅射成膜方法，其中，分别测量所述靶材的两端的所述实际电阻值，当所述两端中的其中一端的所述实际电阻值达到所述临界电阻值时，所述控制系统发出警报信号以更换所述靶材。
  11. 如权利要求8所述的物理溅射成膜方法，其中，所述靶材的两端分别接有所述方阻计。
  12. 如权利要求7所述的物理溅射成膜方法，其中，所述方阻计包括绝缘针杆和套设于所述绝缘针杆内的电阻测量探针，其中，所述绝缘针杆穿过所述靶材背板以及所述粘结层以使所述电阻测量探针与所述靶材相连。
  13. 如权利要求7所述的物理溅射成膜方法，其中，所述靶材设于靶材背板上。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040005378A (ko) * 2002-07-10 2004-01-16 삼성전자주식회사 스퍼터링 장치의 타깃 사용량 측정 방법
CN102443770A (zh) * 2011-09-15 2012-05-09 上海华力微电子有限公司 预防物理气相沉积溅射工艺过程中金属靶材被击穿的方法
CN102492931A (zh) * 2011-12-12 2012-06-13 合肥工业大学 物理气相薄膜沉积工艺中控制薄膜沉积速率的模型补偿方法
CN103173735A (zh) * 2013-03-14 2013-06-26 上海华力微电子有限公司 一种预防pvd溅射工艺中靶材被击穿的方法
CN204125528U (zh) * 2014-11-13 2015-01-28 昆山工研院新型平板显示技术中心有限公司 磁控溅射金属氧化物的设备
CN104746025A (zh) * 2013-12-27 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 溅射装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH669609A5 (zh) * 1986-12-23 1989-03-31 Balzers Hochvakuum
US7028553B2 (en) * 2003-05-16 2006-04-18 Pacific Consolidated Industries, Llc Apparatus for delivering pressurized fluid
KR20070087462A (ko) * 2006-02-23 2007-08-28 삼성전자주식회사 스퍼터링설비
CN203782228U (zh) * 2014-04-22 2014-08-20 南昌欧菲光科技有限公司 矩形平面磁控溅射靶材及磁控溅射靶装置
CN105951052B (zh) * 2016-06-29 2018-10-12 昆山国显光电有限公司 磁控溅射装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040005378A (ko) * 2002-07-10 2004-01-16 삼성전자주식회사 스퍼터링 장치의 타깃 사용량 측정 방법
CN102443770A (zh) * 2011-09-15 2012-05-09 上海华力微电子有限公司 预防物理气相沉积溅射工艺过程中金属靶材被击穿的方法
CN102492931A (zh) * 2011-12-12 2012-06-13 合肥工业大学 物理气相薄膜沉积工艺中控制薄膜沉积速率的模型补偿方法
CN103173735A (zh) * 2013-03-14 2013-06-26 上海华力微电子有限公司 一种预防pvd溅射工艺中靶材被击穿的方法
CN104746025A (zh) * 2013-12-27 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 溅射装置
CN204125528U (zh) * 2014-11-13 2015-01-28 昆山工研院新型平板显示技术中心有限公司 磁控溅射金属氧化物的设备

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