WO2018178795A1 - Display device, display module, and electronic apparatus - Google Patents
Display device, display module, and electronic apparatus Download PDFInfo
- Publication number
- WO2018178795A1 WO2018178795A1 PCT/IB2018/051757 IB2018051757W WO2018178795A1 WO 2018178795 A1 WO2018178795 A1 WO 2018178795A1 IB 2018051757 W IB2018051757 W IB 2018051757W WO 2018178795 A1 WO2018178795 A1 WO 2018178795A1
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- WIPO (PCT)
- Prior art keywords
- liquid crystal
- crystal panel
- display device
- substrate
- electrode
- Prior art date
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Definitions
- One embodiment of the present invention relates to a liquid crystal display device, a module, and an electronic device.
- one embodiment of the present invention is not limited to the above technical field.
- a semiconductor device, a display device, a light-emitting device, an electronic device, a lighting device, an input / output device (eg, a touch panel), a driving method thereof, or a manufacturing method thereof is given as an example. be able to.
- a semiconductor device refers to any device that can function by utilizing semiconductor characteristics.
- a display device (a liquid crystal display device, a light-emitting display device, or the like), a projection device, a lighting device, an electro-optical device, a power storage device, a memory device, a semiconductor circuit, an imaging device, an electronic device, or the like may be referred to as a semiconductor device.
- a semiconductor device Alternatively, it may be said that these include semiconductor devices.
- display devices with high resolution have been demanded.
- display devices with a large number of pixels such as full high-definition (pixel count 1920 ⁇ 1080), 4K (pixel count 3840 ⁇ 2160 or 4096 ⁇ 2160, etc.) and 8K (pixel count 7680 ⁇ 4320 or 8192 ⁇ 4320 etc.) are popular.
- full high-definition pixel count 1920 ⁇ 1080
- 4K pixel count 3840 ⁇ 2160 or 4096 ⁇ 2160, etc.
- 8K pixel count 7680 ⁇ 4320 or 8192 ⁇ 4320 etc.
- a flat panel display represented by a liquid crystal display device or a light emitting display device is widely used.
- Silicon is mainly used as a semiconductor material of transistors constituting these display devices, but in recent years, a technique using a transistor using a metal oxide for a pixel of a display device has also been developed.
- Patent Document 1 discloses a technique using amorphous silicon as a semiconductor material of a transistor.
- Patent Documents 2 and 3 disclose a technique using a metal oxide as a semiconductor material of a transistor.
- An object of one embodiment of the present invention is to provide a display device with a high contrast ratio.
- An object of one embodiment of the present invention is to provide a display device with a wide viewing angle.
- An object of one embodiment of the present invention is to provide a display device with high resolution.
- An object of one embodiment of the present invention is to provide a display device that can operate at a high frame frequency.
- An object of one embodiment of the present invention is to provide a large display device.
- An object of one embodiment of the present invention is to provide a highly reliable display device.
- One embodiment of the present invention is a display device including a first liquid crystal panel and a second liquid crystal panel.
- the light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel.
- the second liquid crystal panel displays an image by selectively transmitting light.
- the first liquid crystal panel and the second liquid crystal panel operate in different modes.
- the first liquid crystal panel preferably operates in a TN (Twisted Nematic) mode.
- the second liquid crystal panel preferably operates in an IPS (In-Plane-Switching) mode or an FFS (Fringe Field Switching) mode.
- the display device of one embodiment of the present invention preferably further includes a first polarizing plate, a second polarizing plate, and a third polarizing plate.
- the first liquid crystal panel is preferably located between the first polarizing plate and the second polarizing plate.
- the second liquid crystal panel is preferably located between the second polarizing plate and the third polarizing plate. It is preferable that the light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel via the second polarizing plate.
- the first polarizing plate and the second polarizing plate preferably have a polarization axis in the first direction.
- the third polarizing plate preferably has a polarization axis in a second direction that intersects the first direction.
- the second liquid crystal panel preferably has a touch sensor function.
- the first liquid crystal panel preferably has a first substrate and a second substrate.
- the second liquid crystal panel preferably has a third substrate and a fourth substrate.
- the second polarizing plate is preferably located between the second substrate and the third substrate.
- the second substrate is preferably located closer to the second liquid crystal panel than the first substrate.
- the third substrate is preferably located closer to the first liquid crystal panel than the fourth substrate.
- the thickness of the second substrate is preferably thinner than the thickness of the first substrate.
- the thickness of the third substrate is preferably thinner than the thickness of the fourth substrate.
- Each of the second substrate and the third substrate preferably includes a resin.
- the second liquid crystal panel preferably has a liquid crystal layer between a pair of alignment films.
- the angle formed by at least one rubbing direction of the pair of alignment films and the electric field direction is preferably greater than 50 ° and less than 80 °.
- an angle formed by at least one rubbing direction of the pair of alignment films and the electric field direction is greater than 10 ° and less than 40 °. Is preferred.
- the contrast ratio of the display device is preferably 100,000: 1 or more.
- the second liquid crystal panel preferably has a resolution of 4K or higher.
- the second liquid crystal panel preferably has a function of displaying a color of 12 bits or more.
- the frame frequency of the second liquid crystal panel is preferably 120 Hz or more.
- the second liquid crystal panel is preferably an active matrix type.
- the second liquid crystal panel includes a liquid crystal element and a transistor, and the transistor is electrically connected to the liquid crystal element.
- the channel formation region of the transistor preferably includes a metal oxide.
- the channel formation region of the transistor preferably includes hydrogenated amorphous silicon.
- One embodiment of the present invention is a display module having any one of the above structures and a circuit board.
- One embodiment of the present invention includes a display device having any one of the above structures, and a display module to which a connector such as a flexible printed circuit board (hereinafter referred to as FPC) or a TCP (Tape Carrier Package) is attached.
- a display module such as a display module in which an IC is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method.
- One embodiment of the present invention is an electronic device including the above display module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.
- a display device with a high contrast ratio can be provided.
- a display device with a wide viewing angle can be provided.
- a display device with high resolution can be provided.
- a display device that can operate at a high frame frequency can be provided.
- a large display device can be provided.
- a highly reliable display device can be provided.
- Sectional drawing which shows an example of a display apparatus Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus.
- FIG. 10 is a cross-sectional view illustrating an example of a transistor. Sectional drawing which shows an example of arrangement
- FIG. 4A is a block diagram illustrating an example of a display module.
- B A circuit diagram showing a pixel.
- FIG. 4A is a block diagram illustrating an example of a display module.
- B A circuit diagram showing a pixel.
- FIG. 6A is a diagram illustrating an example of voltage-transmittance characteristics of a liquid crystal element.
- B (C) Top view illustrating a rubbing angle.
- FIG. 5A illustrates a television device.
- FIG. 14 illustrates an example of an electronic device. The figure which shows the calculation result of Example 1.
- FIG. The figure which shows the calculation result of Example 1.
- FIG. The figure which shows the calculation result of Example 1.
- FIG. The figure which shows the calculation result of Example 1.
- FIG. The figure which shows the calculation result of Example 1.
- FIG. The figure which shows the calculation result of Example 1.
- FIG. The figure which shows the calculation result of
- film and “layer” can be interchanged with each other depending on the case or circumstances.
- conductive layer can be changed to the term “conductive film”.
- insulating film can be changed to the term “insulating layer”.
- the display device of this embodiment includes a first liquid crystal panel and a second liquid crystal panel.
- the light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel.
- the second liquid crystal panel displays an image by selectively transmitting light.
- the first liquid crystal panel and the second liquid crystal panel operate in different modes.
- the contrast ratio of the display device is preferably high.
- the maximum luminance of the display device can be increased by increasing the light amount of the backlight.
- black may not be displayed correctly and may be white or gray (also referred to as black float).
- the image of the backlight is displayed through the two liquid crystal panels. For this reason, even if the amount of light from the backlight is large, black floating is unlikely to occur. Therefore, both a low minimum luminance and a high maximum luminance can be achieved, and the contrast ratio can be increased.
- the contrast ratio of the display device of this embodiment can be 10,000: 1 or more, 100,000: 1 or more, or 1000000: 1 or more.
- the two liquid crystal panels operate in different modes. Therefore, a mode suitable for each of the two liquid crystal panels can be selected. Thereby, a high-quality display device can be obtained.
- the first liquid crystal panel is a panel that mainly performs light control, it is preferable to operate in a mode with high transmittance.
- the second liquid crystal panel is a panel that mainly displays an image, it is preferable to operate in a mode with high viewing angle characteristics. Thereby, a display device having a high contrast ratio and a wide viewing angle can be realized. In view of viewing angle characteristics, the second liquid crystal panel is preferably positioned closer to the display surface than the first liquid crystal panel.
- the TN mode has higher transmittance than the transverse electric field mode (IPS mode, FFS mode, etc.) and the birefringence mode (VA mode, etc.), and is suitable for the first liquid crystal panel for light control. Furthermore, the TN mode is preferable in that it has merits such as low driving voltage and low cost.
- the arrangement of the polarizing plates positioned above and below the first liquid crystal panel is preferably parallel Nicols. That is, the polarization axes (also referred to as transmission axes) of the two polarizing plates are preferably parallel to each other.
- the first liquid crystal panel is normally black (displays black when the voltage is OFF).
- normally white white display when the voltage is OFF
- the display device of this embodiment has a structure in which black floating is unlikely to occur because two liquid crystal panels are stacked. Therefore, even when normally black is adopted, black can be displayed well. Further, normally black in TN mode may be better with normally black than with normally white.
- the display device of this embodiment includes the first liquid crystal panel that functions as a light control panel, light that enters the display panel (second liquid crystal panel) using not only the backlight but also the light control panel.
- the brightness can be adjusted. Thereby, the contrast ratio of the display device can be increased.
- the IPS mode or the FFS mode is preferably used for the second liquid crystal panel.
- the IPS mode and the FFS mode are suitable for the second liquid crystal panel for display because the luminance change and the color change due to the viewing angle are small.
- the use of the FFS mode is preferable because a capacitance can be formed between the pixel electrode and the common electrode, so that the aperture ratio can be increased.
- the liquid crystal panel of one embodiment of the present invention described in Embodiment 2 is preferably used.
- the liquid crystal panel has a characteristic that gradation shift hardly occurs even when a voltage change occurs. Therefore, even if the color depth of the display device is larger than 8 bits (for example, 12 bits), high display quality can be realized.
- ⁇ Configuration example 1> A cross-sectional view of the display device 100A is shown in FIG.
- the display device 100A includes a liquid crystal panel 10A, a liquid crystal panel 20A, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 20A, the polarizing plate 62, the liquid crystal panel 10A, and the polarizing plate 63 in this order, and is emitted to the outside of the display device 100A. .
- a material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
- the liquid crystal panel 10A is an active matrix liquid crystal panel to which the FFS mode is applied.
- the liquid crystal panel 10A is a transmissive liquid crystal panel.
- the liquid crystal panel 10A functions as a display panel.
- the liquid crystal panel 10A includes a substrate 11, a substrate 12, a transistor 13, an insulating layer 14, a liquid crystal element 40, and the like.
- the liquid crystal element 40 includes an electrode 41, a liquid crystal layer 42, and an electrode 43.
- the electrode 41 functions as a pixel electrode, and the electrode 43 functions as a common electrode.
- the electrode 41 is provided on the insulating layer 14.
- the electrode 41 and the transistor 13 are electrically connected through an opening provided in the insulating layer 14.
- the electrode 41 is covered with an insulating layer 44, and the electrode 43 is provided on the insulating layer 44.
- the electrode 41 has a region overlapping with the electrode 43 with the insulating layer 44 interposed therebetween.
- the electrode 41 also has a region that does not overlap with the electrode 43.
- the liquid crystal layer 42 is sandwiched between the substrate 11 and the substrate 12.
- the liquid crystal panel 20A is a passive matrix liquid crystal panel to which the TN mode is applied.
- the liquid crystal panel 20A is a transmissive liquid crystal panel.
- the liquid crystal panel 20A functions as a light control panel.
- the light control panel may be a passive matrix type or an active matrix type.
- the liquid crystal panel 20A includes a substrate 21, a substrate 22, a liquid crystal element 50, and the like.
- the liquid crystal element 50 includes an electrode 51, a liquid crystal layer 52, and an electrode 53.
- the electrode 51 functions as a pixel electrode, and the electrode 53 functions as a common electrode.
- the electrode 51 is provided on the substrate 21 side.
- the electrode 53 is provided on the substrate 22 side.
- the liquid crystal layer 52 is sandwiched between the electrode 51 and the electrode 53.
- a conductive layer 25 formed using the same process and the same material as the electrode 51 is provided on the substrate 21.
- the conductive layer 25 is electrically connected to the electrode 53 through the connection body 29.
- the light control panel and the display panel have the same resolution and definition, it is preferable that the light control panel can be used to control the amount of light incident on the display panel in units of sub-pixels of the display panel.
- the display panel and the light control panel can have different resolution and definition.
- the resolution of the display panel is extremely high, the cost of the display device may increase if the resolution of the light control panel is made equal to the resolution of the display panel. Therefore, the resolution of the light control panel may be lower than the resolution of the display panel. That is, the resolution of the display panel is preferably equal to or higher than the resolution of the light control panel.
- the backlight unit 30 may be a direct type backlight, an edge light type backlight, or the like.
- As the light source an LED (Light Emitting Diode), an organic EL (Electroluminescence) element, or the like can be used.
- the polarizing plate 61 and the polarizing plate 62 preferably have a polarization axis in the first direction.
- the polarizing plate 63 preferably has a polarization axis in a second direction that intersects the first direction. That is, the arrangement of the polarizing plate 61 and the polarizing plate 62 is parallel Nicol, and the liquid crystal panel 20A operating in the TN mode is normally black. Further, the arrangement of the polarizing plate 62 and the polarizing plate 63 is crossed Nicol, and the liquid crystal panel 10A operating in the FFS mode is normally black.
- ⁇ Configuration example 2> A cross-sectional view of the display device 100B is shown in FIG.
- the display device 100B is different from the display device 100A in that a liquid crystal panel that functions as a display panel operates in the IPS mode.
- description of the same configuration as the previous configuration example is omitted.
- the display device 100B includes a liquid crystal panel 10B, a liquid crystal panel 20B, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 20B, the polarizing plate 62, the liquid crystal panel 10B, and the polarizing plate 63 in this order, and is emitted to the outside of the display device 100B. .
- a material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
- the liquid crystal panel 10B is an active matrix liquid crystal panel to which the IPS mode is applied.
- the liquid crystal panel 10B is a transmissive liquid crystal panel.
- the liquid crystal panel 10B functions as a display panel.
- the liquid crystal panel 10B includes a substrate 11, a substrate 12, a transistor 13, an insulating layer 14, a liquid crystal element 45, and the like.
- the liquid crystal element 45 includes an electrode 46, a liquid crystal layer 47, and an electrode 48.
- the electrode 46 and the electrode 48 are provided on the insulating layer 14.
- the electrode 46 and the electrode 48 can be formed using the same process and the same material.
- the electrode 46 and the transistor 13 are electrically connected through an opening provided in the insulating layer 14.
- the liquid crystal layer 47 is sandwiched between the substrate 11 and the substrate 12.
- liquid crystal panel 20B has the same configuration as the liquid crystal panel 20A, detailed description thereof is omitted.
- the polarizing plate 61 and the polarizing plate 62 preferably have a polarization axis in the first direction.
- the polarizing plate 63 preferably has a polarization axis in a second direction that intersects the first direction. That is, the arrangement of the polarizing plate 61 and the polarizing plate 62 is parallel Nicol, and the liquid crystal panel 20B operating in the TN mode is normally black. The arrangement of the polarizing plate 62 and the polarizing plate 63 is crossed Nicol, and the liquid crystal panel 10B operating in the IPS mode is normally black.
- FIG. 2A shows a cross-sectional view of the display device 100C
- FIG. 2B shows a cross-sectional view of the display device 100D
- the display device 100C is different from the display device 100A in that a liquid crystal panel that functions as a light control panel is an active matrix type.
- the display device 100D is different from the display device 100B in that the liquid crystal panel that functions as a light control panel is an active matrix type.
- the display device 100C includes a liquid crystal panel 10C, a liquid crystal panel 20C, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- liquid crystal panel 10C has the same configuration as the liquid crystal panel 10A, detailed description thereof is omitted.
- the liquid crystal panel 20C is an active matrix type liquid crystal panel to which the TN mode is applied.
- the liquid crystal panel 20C is a transmissive liquid crystal panel.
- the liquid crystal panel 20C functions as a light control panel.
- the liquid crystal panel 20C includes a substrate 21, a substrate 22, a transistor 23, an insulating layer 24, a liquid crystal element 50, and the like.
- the liquid crystal element 50 includes an electrode 51, a liquid crystal layer 52, and an electrode 53.
- the electrode 51 is provided on the insulating layer 24.
- the electrode 51 and the transistor 23 are electrically connected through an opening provided in the insulating layer 24.
- the electrode 53 is provided on the substrate 22 side.
- the liquid crystal layer 52 is sandwiched between the electrode 51 and the electrode 53.
- a conductive layer 25 formed using the same process and the same material as the electrode 51 is provided on the substrate 21.
- the conductive layer 25 is electrically connected to the electrode 53 through the connection body 29.
- the structure and materials of the transistors may be the same or different.
- the display device 100D includes a liquid crystal panel 10D, a liquid crystal panel 20D, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- liquid crystal panel 10D has the same configuration as the liquid crystal panel 10B, detailed description thereof is omitted.
- liquid crystal panel 20D has the same configuration as the liquid crystal panel 20C, detailed description thereof is omitted.
- ⁇ Configuration example 4> Although not shown in Structural Examples 1 to 3, in the display device of this embodiment, one or both of the two liquid crystal panels are provided with a colored layer (such as a color filter). Various colors can be presented by changing the color of the colored layer depending on the sub-pixel. Therefore, the display device of this embodiment can display a color image.
- the light 35 emitted from the light source included in the backlight unit 30 is absorbed by the colored layer in light other than the specific wavelength region.
- light emitted from the red sub-pixel to the outside of the display device exhibits red
- light emitted from the green sub-pixel to the outside of the display device exhibits green
- the light is emitted from the blue sub-pixel to the display device.
- the light emitted to the outside exhibits blue.
- an arrangement example of the colored layer will be described.
- FIG. 3A is a cross-sectional view of the display device 100E.
- the display device 100E includes a liquid crystal panel 10E, a liquid crystal panel 20E, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the liquid crystal panel 10E includes a light shielding layer 38 and a colored layer 39 in addition to the configuration of the liquid crystal panel 10C. Specifically, a light shielding layer 38 and a colored layer 39 are provided on the substrate 12 side. Of the light incident on the liquid crystal panel 10E, only light in a specific wavelength region passes through the colored layer 39 and is emitted to the outside of the display device 100E. By providing the colored layer 39 at a position close to the display surface, color mixing can be suppressed and display quality of the display device can be improved.
- liquid crystal panel 20E has the same configuration as the liquid crystal panel 20C, detailed description thereof is omitted.
- FIG. 3B is a cross-sectional view of the display device 100F.
- the display device 100F includes a liquid crystal panel 10F, a liquid crystal panel 20F, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the liquid crystal panel 10F includes a light shielding layer 38 in addition to the configuration of the liquid crystal panel 10D. Specifically, a light shielding layer 38 is provided on the substrate 12 side.
- the liquid crystal panel 20F has a configuration in which the liquid crystal panel 20D is turned upside down.
- the substrate 21 is positioned on the liquid crystal panel 10F side, and the substrate 22 is positioned on the backlight unit 30 side.
- the liquid crystal panel 20 ⁇ / b> F includes an insulating layer 27 and a colored layer 39.
- a colored layer 39 is provided on the substrate 22, an insulating layer 27 is provided on the colored layer 39, and an electrode 53 is provided on the insulating layer 27.
- the light 35 emitted from the light source of the backlight unit 30 is incident on the liquid crystal panel 20F via the polarizing plate 61.
- the light 35 passes through the liquid crystal panel 20F in the order of the substrate 22, the colored layer 39, the insulating layer 27, the liquid crystal element 50, the insulating layer 24, and the substrate 21.
- light other than a specific wavelength region is absorbed by the colored layer 39.
- only light in a specific wavelength region is incident on the liquid crystal element 50, the insulating layer 24, the substrate 21, the polarizing plate 62, the liquid crystal panel 10F, and the polarizing plate 63, and is emitted outside the display device 100F.
- the amount of light incident on the liquid crystal layers of the two liquid crystal panels can be reduced as compared with the display device 100E.
- FIG. 4A is a cross-sectional view of the display device 100G
- FIG. 4B is a cross-sectional view of the display device 100H.
- the display device 100G includes a liquid crystal panel 10G, a liquid crystal panel 20G, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the liquid crystal panel 10G is different from the liquid crystal panel 10E in that it does not have the substrate 11 but has the flexible substrate 16.
- the liquid crystal panel 20G is different from the liquid crystal panel 20E in that it does not have the substrate 22 but has a flexible substrate 26.
- the display device 100H includes a liquid crystal panel 10H, a liquid crystal panel 20H, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the liquid crystal panel 10 ⁇ / b> H has a configuration in which the liquid crystal panel 10 ⁇ / b> F is turned upside down, and does not have the substrate 12 but has the flexible substrate 16. On the flexible substrate 16, a light shielding layer 38 and a colored layer 39 are provided.
- the liquid crystal panel 20H has the same configuration as the liquid crystal panel 20G.
- a flexible material can be used for each of the flexible substrate 16 and the flexible substrate 26, and a resin film is preferably used.
- the display device can be made thinner and lighter than when a hard substrate such as a glass substrate is used.
- the distance between the liquid crystal elements included in the two liquid crystal panels can be shortened, the occurrence of parallax can be suppressed and the viewing angle of the display device can be widened. This is particularly effective when the number of pixels of the liquid crystal panel 10H and the liquid crystal panel 20H is close or the same.
- the light 35 emitted from the light source of the backlight unit 30 is incident on the liquid crystal panel 10H via the polarizing plate 61, the liquid crystal panel 20H, and the polarizing plate 62.
- the light 35 passes through the liquid crystal panel 10H in the order of the flexible substrate 16, the colored layer 39, the liquid crystal element 45, the insulating layer 14, and the substrate 11.
- light other than a specific wavelength region is absorbed by the colored layer 39.
- only light in a specific wavelength region enters the liquid crystal element 45, the insulating layer 14, the substrate 11, and further the polarizing plate 63, and is emitted outside the display device 100H.
- an electrode or a transistor of a liquid crystal element is formed over a hard substrate and bonded to the substrate 12 or the substrate 21, and then the hard substrate is peeled off and transferred to a flexible substrate can be used.
- the flexible substrate 16 and the flexible substrate 26 may be bonded to the substrate 12 or the substrate 21 with an adhesive or the like, respectively.
- a hard substrate over which a transistor is formed may have lower peelability than a hard substrate over which only an electrode of a liquid crystal element is formed. Therefore, it is preferable to form one or a plurality of electrodes, colored layers, and light-shielding layers of a liquid crystal element over a hard substrate that is peeled later, and a transistor is formed on a substrate (the substrate 12 or the substrate 21) that is not peeled off. .
- the transistor 13 is formed on the substrate 11
- the transistor 23 is formed on the substrate 21
- the electrode 53, the coloring layer 39, the light shielding layer 38, and the like are located on the flexible substrate side. .
- the hard substrate can be peeled off with a high yield and transferred to the flexible substrate 26. Further, after the colored layer 39 and the light shielding layer 38 are formed on the hard substrate and bonded to the substrate 11, the hard substrate can be peeled off with a high yield and transferred to the flexible substrate 16.
- One embodiment of the present invention can be applied to a display device (also referred to as an input / output device or a touch panel) on which a touch sensor is mounted.
- a display device also referred to as an input / output device or a touch panel
- the configuration of each display device described above can be applied to a touch panel.
- a detection element also referred to as a sensor element
- Various sensors that can detect the proximity or contact of an object to be detected, such as a finger or a stylus, can be applied as the detection element.
- a sensor method for example, various methods such as a capacitance method, a resistance film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used.
- a touch panel having a capacitive detection element will be described as an example.
- Examples of the electrostatic capacity method include a surface electrostatic capacity method and a projection electrostatic capacity method.
- examples of the projected capacitance method include a self-capacitance method and a mutual capacitance method. The mutual capacitance method is preferable because simultaneous multipoint detection is possible.
- the touch panel of one embodiment of the present invention includes a structure in which a separately manufactured display panel and a detection element are bonded together, a structure in which an electrode that forms the detection element is provided on one or both of a substrate that supports the display element and a counter substrate, and the like Various configurations can be applied.
- the touch sensor is preferably mounted on a liquid crystal panel located on the display surface side. Thereby, the sensitivity of a touch sensor can be raised.
- a display liquid crystal panel is located on the display surface side and has a touch sensor.
- FIG. 5A shows a cross-sectional view of the touch panel 110A.
- FIG. 5B is a cross-sectional view of the touch panel 110B.
- a touch panel 110A illustrated in FIG. 5A includes a liquid crystal panel 111A, a liquid crystal panel 112A, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 112A, the polarizing plate 62, the liquid crystal panel 111A, and the polarizing plate 63 in this order, and is emitted to the outside of the touch panel 110A.
- a material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
- the liquid crystal panel 111A has a function of displaying an image and a function as a touch sensor.
- the touch panel 110A has a configuration in which an electrode or the like constituting a detection element is provided only on the substrate 11 on which the transistor 13 or the like of the liquid crystal panel 111A is formed.
- Such a configuration can reduce the thickness or weight of the touch panel or reduce the number of components of the touch panel, compared to a configuration in which the separately manufactured liquid crystal panel and the detection element are bonded.
- substrate 12 side can be simplified.
- one or a plurality of FPCs connected to the substrate 11 side can supply both a signal for driving the liquid crystal element and a signal for driving the detection element. Therefore, it is easy to incorporate in an electronic device, and the number of parts can be reduced.
- the liquid crystal panel 111A is an active matrix liquid crystal panel to which the FFS mode is applied.
- the liquid crystal panel 111A is a transmissive liquid crystal panel.
- the liquid crystal panel 111A functions as a display panel.
- the liquid crystal panel 111A includes a substrate 11, a substrate 12, a transistor 13, an insulating layer 14, a liquid crystal element 40a, a liquid crystal element 40b, and the like.
- the liquid crystal element 40a includes an electrode 41a, a liquid crystal layer 42, and an electrode 43a.
- the liquid crystal element 40b includes an electrode 41b, a liquid crystal layer 42, and an electrode 43b.
- FIG. 5A two transistors 13 are shown.
- An insulating layer 14 is provided on the two transistors 13, and an electrode 41 a and an electrode 41 b are provided on the insulating layer 14.
- the electrode 41 a and one of the two transistors 13 are electrically connected through an opening provided in the insulating layer 14.
- the electrode 41 b and the other of the two transistors 13 are electrically connected through an opening provided in the insulating layer 14.
- the electrode 41 a and the electrode 41 b are covered with an insulating layer 44, and the electrode 43 a and the electrode 43 b are provided on the insulating layer 44.
- the electrode 41a has a region overlapping with the electrode 43a with the insulating layer 44 interposed therebetween.
- the electrode 41a also has a region that does not overlap with the electrode 43a.
- the electrode 41b has a region overlapping with the electrode 43b with the insulating layer 44 interposed therebetween.
- the electrode 41b also has a region that does not overlap with the electrode 43b.
- the liquid crystal layer 42 is sandwiched between the substrate 11 and the substrate 12.
- the electrode 43a and the electrode 43b are electrically insulated.
- proximity or contact of the detection target can be detected using a capacitance formed between the electrode 43a and the electrode 43b. That is, in the touch panel 110A, the electrodes 43a and 43b serve as both the common electrode of the liquid crystal element and the electrode of the detection element.
- the electrode included in the liquid crystal element also serves as the electrode included in the detection element. Therefore, the manufacturing process can be simplified and the manufacturing cost can be reduced. In addition, the touch panel can be reduced in thickness and weight.
- the liquid crystal panel 112A has the same configuration as the liquid crystal panel 20C (FIG. 2A).
- the liquid crystal element 50 included in the liquid crystal panel 112A is disposed so as to overlap with two or more liquid crystal elements included in the liquid crystal panel 111A (two liquid crystal elements 40a and 40b in FIG. 5A). That is, it is a configuration that performs dimming of two or more subpixels of the touch panel 110 ⁇ / b> A using one liquid crystal element 50. In other words, dimming of two or more subpixels of the liquid crystal panel 111A is performed using one subpixel of the liquid crystal panel 112A.
- the display panel and the light control panel can have different resolution and definition.
- the resolution of the display panel is preferably equal to or higher than the resolution of the light control panel.
- a touch panel 110B illustrated in FIG. 5B includes a liquid crystal panel 111B, a liquid crystal panel 112B, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 112B, the polarizing plate 62, the liquid crystal panel 111B, and the polarizing plate 63 in this order, and is emitted to the outside of the touch panel 110B.
- a material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
- the liquid crystal panel 111B has a function of displaying an image and a function as a touch sensor.
- the liquid crystal panel 111B has a configuration in which an electrode or the like constituting a detection element is provided only on the counter substrate (substrate 12). Such a configuration can reduce the thickness or weight of the touch panel or reduce the number of components of the touch panel, compared to a configuration in which a separately manufactured display device and a detection element are bonded.
- a plurality of electrodes 71 and electrodes 72 are provided on the substrate 12.
- the electrode 71 and the electrode 72 overlap with the electrode 73 with the insulating layer 74 interposed therebetween.
- the electrode 71 and the electrode 73 are electrically connected through an opening provided in the insulating layer 74.
- the two electrodes 71 provided so as to sandwich the electrode 72 are electrically connected by an electrode 73.
- the electrode 73 overlaps the light shielding layer 38 with the insulating layer 75 interposed therebetween.
- the visible light transmittance of the electrode 73 does not matter. Since the electrode 71 and the electrode 72 have a portion overlapping the colored layer 39, it is preferable that the visible light transmittance is high.
- the electrodes constituting the detection element may be arranged only in the non-display area.
- the visible light transmittance of the material of the electrode is not limited. Therefore, a low resistivity material such as metal can be used.
- a metal mesh as the wiring and electrodes of the touch sensor. Thereby, the resistance of the wiring and electrodes of the touch sensor can be lowered.
- metal is a material having a high reflectance, but it can be darkened by performing an oxidation treatment or the like. Therefore, even when viewed from the display surface side, it is possible to suppress a decrease in visibility due to reflection of external light.
- the wiring and the electrode may be formed using a stack of a metal layer and a layer with low reflectance (also referred to as a “dark color layer”).
- the dark color layer include a layer containing copper oxide and a layer containing copper chloride or tellurium chloride.
- the dark color layer is formed using fine metal particles such as Ag particles, Ag fibers, and Cu particles, nanocarbon particles such as carbon nanotubes (CNT) and graphene, and conductive polymers such as PEDOT, polyaniline, and polypyrrole. May be.
- the components provided on the substrate 11 are the same as those of the liquid crystal panel 10D illustrated in FIG.
- the liquid crystal panel 112B has a configuration similar to that of the liquid crystal panel 20D illustrated in FIG.
- an active matrix liquid crystal panel to which the FFS mode is applied is used as the liquid crystal panel for display, and an active matrix liquid crystal panel to which the TN mode is applied is used as the liquid crystal panel for light control.
- the display device will be described.
- FIG. 6 shows a cross-sectional view of the display device 200A.
- the display device 200A includes a liquid crystal panel 80A that is a liquid crystal panel for display and a liquid crystal panel 90A that is a liquid crystal panel for dimming.
- the display device 200 ⁇ / b> A further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- FIG. 6 can be a specific example of a display device corresponding to the configuration example 3 (the display device 100C illustrated in FIG. 2A) and the configuration example 4 (the display device 100E illustrated in FIG. 3A).
- the display device 200A includes a display unit 162 and a drive circuit unit 164.
- the display portion 162 includes a plurality of pixels and has a function of displaying an image.
- the pixel has a plurality of subpixels.
- the display unit 162 can perform full-color display by including one pixel including a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
- the color which a subpixel exhibits is not restricted to red, green, and blue.
- a sub-pixel exhibiting a color such as white, yellow, magenta, or cyan may be used.
- the transmission region of the liquid crystal panel 90A and the display region of the liquid crystal panel 80A are stacked.
- the light emitted from the light source included in the backlight unit 30 is transmitted through the polarizing plate 61, the transmission region of the liquid crystal panel 90A, the polarizing plate 62, the display region of the liquid crystal panel 80A, and the polarizing plate 63 in this order. It is injected outside.
- a material that transmits visible light is used as a material for these layers through which light is transmitted.
- the liquid crystal panel 80A and the liquid crystal panel 90A can independently have one or both of a scanning line driving circuit and a signal line driving circuit. Alternatively, the liquid crystal panel 80A and the liquid crystal panel 90A may not include both the scanning line driving circuit and the signal line driving circuit.
- the liquid crystal panel may include a sensor such as a touch sensor
- the liquid crystal panel may include a sensor driving circuit.
- an IC integrated circuit having one or more of a signal line driver circuit, a scan line driver circuit, and a sensor driver circuit may be connected to the liquid crystal panel.
- the FPC 172b is electrically connected to the liquid crystal panel 80A through the connection body 242b.
- An FPC 172a is electrically connected to the liquid crystal panel 90A via a connection body 242a.
- a signal and power are supplied from the outside to the drive circuit unit 164 via each FPC. Signals and power are supplied to the display portion 162 and the driver circuit portion 164 through the conductive layer 251 and the wiring 222c.
- FIG. 6 illustrates an example in which a portion to which the FPC 172b of the liquid crystal panel 80A is connected and a portion to which the FPC 172a of the liquid crystal panel 90A are connected overlap, but one embodiment of the present invention is not limited thereto, and these portions are It does not have to overlap each other.
- the liquid crystal panel 90A includes a substrate 21, a transistor 201a, a transistor 23a, a liquid crystal element 50, an alignment film 133a, an alignment film 133b, an adhesive layer 141a, a substrate 22, and the like.
- the display portion 162 is provided with a transistor 23a.
- the transistor 23a includes a conductive layer 221 functioning as a gate electrode, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231, and a conductive layer 222a and a conductive layer 222b functioning as a source electrode and a drain electrode.
- the transistor 23 a is covered with an insulating layer 217 and an insulating layer 218.
- the insulating layer 215 functions as a planarization film.
- the transistor 23a includes a metal oxide in the semiconductor layer 231.
- the conductive layer 222b is electrically connected to the electrode 51 through an opening provided in the insulating layer 217, the insulating layer 218, and the insulating layer 215.
- the driver circuit portion 164 is provided with a transistor 201a.
- the transistor 201a has a structure similar to that of the transistor 23a.
- the display unit 162 is provided with a liquid crystal element 50.
- the liquid crystal element 50 is a liquid crystal element to which the TN mode is applied.
- the liquid crystal element 50 includes an electrode 51, an electrode 53, and a liquid crystal layer 52.
- the alignment of the liquid crystal layer 52 can be controlled by an electric field generated between the electrode 51 and the electrode 53.
- the liquid crystal layer 52 is located between the alignment film 133a and the alignment film 133b.
- the alignment film can control the alignment of the liquid crystal layer 52.
- the alignment film 133 a is positioned between the electrode 51 and the liquid crystal layer 52
- the alignment film 133 b is positioned between the electrode 53 and the liquid crystal layer 52.
- substrate 22 are bonded together by the contact bonding layer 141a.
- a liquid crystal layer 52 is sealed in a region surrounded by the substrate 21, the substrate 22, and the adhesive layer 141a.
- the liquid crystal panel 80A includes a substrate 11, a transistor 201b, a transistor 13a, a liquid crystal element 40, an alignment film 133c, an alignment film 133d, a colored layer 39, a light shielding layer 38, an overcoat 121, an adhesive layer 141b, and a substrate. 12 etc.
- the laminated structure from the substrate 11 to the electrode 41 is the same as the laminated structure from the substrate 21 to the electrode 51 of the liquid crystal panel 90A, detailed description thereof is omitted.
- a liquid crystal element 40 is provided in the display unit 162.
- the liquid crystal element 40 is a liquid crystal element to which the FFS mode is applied.
- the liquid crystal element 40 includes an electrode 41, an electrode 43, and a liquid crystal layer 42.
- the alignment of the liquid crystal layer 42 can be controlled by an electric field generated between the electrode 41 and the electrode 43.
- the liquid crystal layer 42 is located between the alignment film 133c and the alignment film 133d.
- the alignment film can control the alignment of the liquid crystal layer 42.
- the alignment film 133 c is positioned between the electrode 43 and the insulating layer 44 and the liquid crystal layer 42
- the alignment film 133 d is positioned between the overcoat 121 and the liquid crystal layer 42.
- the electrode 43 has, for example, a comb-like top surface shape (also referred to as a planar shape) or a top surface shape provided with a slit.
- An insulating layer 44 is provided between the electrode 41 and the electrode 43.
- the electrode 41 has a portion that overlaps the electrode 43 with the insulating layer 44 interposed therebetween. Further, in a region where the electrode 41 and the colored layer 39 overlap, there is a portion where the electrode 43 is not disposed on the electrode 41.
- An overcoat 121 is preferably provided between the colored layer 39 and the light shielding layer 38 and the liquid crystal layer 42.
- the overcoat 121 can suppress the diffusion of impurities contained in the colored layer 39 and the light shielding layer 38 into the liquid crystal layer 42.
- the material of the substrate included in the display device there is no particular limitation on the material of the substrate included in the display device, and various substrates can be used.
- a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, a plastic substrate, or the like can be used.
- the display device can be reduced in weight and thickness. Furthermore, a flexible display device can be realized by using a flexible substrate.
- liquid crystal material there are a positive liquid crystal material having a positive dielectric anisotropy ( ⁇ ) and a negative liquid crystal material having a negative dielectric constant.
- ⁇ positive dielectric anisotropy
- negative liquid crystal material having a negative dielectric constant.
- either material can be used, and an optimum liquid crystal material can be used depending on a mode to be applied and a design.
- liquid crystal elements to which various modes are applied can be used.
- VA Vertical Alignment
- ASM Axial Symmetrical Aligned Micro-cell
- OCB Optically Compensated Birefringence LC
- a liquid crystal element to which an AFLC (Antiferroelectric Liquid Crystal) mode, an ECB (Electrically Controlled Birefringence) mode, a VA-IPS mode, a guest-host mode, a vertical alignment (VA) mode, or the like can be used.
- MVA Multi-Domain Vertical Alignment
- PVA Powerned Vertical Alignment
- ASV Advanced Super View
- the liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal.
- the optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field).
- a thermotropic liquid crystal a low molecular liquid crystal
- a polymer liquid crystal a polymer dispersed liquid crystal (PDLC)
- PDLC polymer dispersed liquid crystal
- ferroelectric liquid crystal an antiferroelectric liquid crystal, or the like
- These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, and the like depending on conditions.
- a liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used.
- the blue phase is one of the liquid crystal phases.
- a liquid crystal composition mixed with 5% by weight or more of a chiral agent is used for the liquid crystal layer in order to improve the temperature range.
- a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and exhibits optical isotropy.
- a liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. Further, since an alignment film is not necessarily provided, a rubbing process is not necessary, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects or breakage of the display panel during the manufacturing process can be reduced.
- liquid crystal panel included in the display device of this embodiment is a transmissive liquid crystal panel
- a conductive material that transmits visible light is used for both of the pair of electrodes.
- a material containing one or more selected from indium (In), zinc (Zn), and tin (Sn) may be used.
- indium oxide, indium tin oxide (ITO), indium zinc oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, and titanium oxide are included. Examples thereof include indium tin oxide, indium tin oxide containing silicon oxide (ITSO), zinc oxide, and zinc oxide containing gallium.
- a film containing graphene can also be used. The film containing graphene can be formed by, for example, reducing a film containing graphene oxide.
- the conductive film that transmits visible light can be formed using an oxide semiconductor (hereinafter also referred to as an oxide conductive layer).
- the oxide conductive layer preferably includes, for example, indium, and further includes an In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf). preferable.
- An oxide semiconductor is a semiconductor material whose resistance can be controlled by at least one of oxygen vacancies in the film and impurity concentrations of hydrogen, water, and the like in the film. Therefore, the resistivity of the oxide conductive layer is controlled by selecting a treatment in which at least one of oxygen vacancies and impurity concentrations is increased or a treatment in which at least one of oxygen vacancies and impurity concentrations is reduced in the oxide semiconductor layer. be able to.
- an oxide conductive layer formed using an oxide semiconductor in this manner is an oxide semiconductor layer with high carrier density and low resistance, an oxide semiconductor layer with conductivity, or an oxide semiconductor with high conductivity. It can also be called a layer.
- the transistor included in the display device of this embodiment may have a top-gate structure or a bottom-gate structure.
- gate electrodes may be provided above and below the channel.
- a semiconductor material used for the transistor is not particularly limited, and examples thereof include an oxide semiconductor, silicon, and germanium.
- crystallinity of the semiconductor material used for the transistor there is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
- a Group 14 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer.
- a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used for the semiconductor layer.
- An oxide semiconductor is preferably used as a semiconductor in which a channel of the transistor is formed.
- an oxide semiconductor having a larger band gap than silicon is preferably used. It is preferable to use a semiconductor material with a wider band gap and lower carrier density than silicon because current in an off state of the transistor can be reduced.
- the oxide semiconductor will be described in detail in Embodiment 3.
- the charge accumulated in the capacitor through the transistor can be held for a long time.
- the driving circuit can be stopped while maintaining the gradation of the displayed image. As a result, a display device with extremely reduced power consumption can be realized.
- the transistor preferably includes an oxide semiconductor layer that is highly purified and suppresses formation of oxygen vacancies.
- the current value (off-current value) in the off state of the transistor can be reduced. Therefore, the holding time of an electric signal such as an image signal can be increased, and the writing interval can be set longer in the power-on state. Therefore, since the frequency of the refresh operation can be reduced, there is an effect of suppressing power consumption.
- a transistor including an oxide semiconductor can be driven at high speed because a relatively high field-effect mobility can be obtained.
- the transistor in the display portion and the transistor in the driver circuit portion can be formed over the same substrate. That is, it is not necessary to separately use a semiconductor device formed of a silicon wafer or the like as the drive circuit, so that the number of parts of the display device can be reduced.
- a high-quality image can be provided by using a transistor that can be driven at high speed.
- the transistor included in the driver circuit portion 164 and the transistor included in the display portion 162 may have the same structure or different structures.
- the transistors included in the driver circuit portion 164 may have the same structure, or two or more structures may be used in combination.
- the transistors included in the display portion 162 may have the same structure, or two or more structures may be used in combination.
- an organic insulating material or an inorganic insulating material can be used as an insulating material that can be used for each insulating layer, overcoat, or the like included in the display device.
- the organic insulating material include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, and phenol resin.
- examples thereof include a film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film.
- conductive layers such as various wirings and electrodes of the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten.
- metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten.
- an alloy containing this as a main component can be used as a single layer structure or a stacked structure.
- a two-layer structure in which a titanium film is laminated on an aluminum film a two-layer structure in which a titanium film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a molybdenum film, or an alloy film containing molybdenum and tungsten
- Two-layer structure in which a copper film is laminated two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a titanium film or a titanium nitride film, and an aluminum film or copper layered on the titanium film or titanium nitride film
- the first and third layers include titanium, titanium nitride, molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy containing molybdenum and zirconium, or a film made of molybdenum nitride.
- a film made of a low resistance material such as copper, aluminum, gold or silver, or an alloy of copper and manganese is preferably formed.
- ITO indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, etc. You may use the electroconductive material which has.
- the oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.
- a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin
- a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin
- an acrylic resin, a urethane resin, an epoxy resin, a siloxane resin, or the like can be used.
- an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.
- ACF Anisotropic Conductive Film
- ACP Anisotropic Conductive Paste
- the colored layer 39 is a colored layer that transmits light in a specific wavelength range.
- materials that can be used for the colored layer 39 include metal materials, resin materials, and resin materials containing pigments or dyes.
- the light shielding layer 38 is provided, for example, between the adjacent colored layers 39 of different colors.
- a black matrix formed using a metal material or a resin material containing a pigment or dye can be used as the light shielding layer 38.
- the light shielding layer 38 is preferably provided in a region other than the display portion 162 such as the drive circuit portion 164 because light leakage due to guided light or the like can be suppressed.
- Thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device are respectively formed by sputtering, chemical vapor deposition (CVD), vacuum evaporation, and pulsed laser deposition (PLD: Pulsed Laser Deposition).
- CVD chemical vapor deposition
- PLD Pulsed Laser Deposition
- Method atomic layer deposition
- ALD Atomic Layer Deposition
- the CVD method include a plasma enhanced chemical vapor deposition (PECVD) method, a thermal chemical vapor deposition (PECVD) method, a thermal CVD method, and the like.
- An example of the thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.
- Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices are spin coat, dip, spray coating, ink jet printing, dispensing, screen printing, offset printing, doctor knife, slit coat, roll coat, curtain, respectively. It can be formed by a method such as coating or knife coating.
- a thin film included in the display device can be processed using a photolithography method or the like.
- an island-shaped thin film may be formed by a film formation method using a shielding mask.
- the thin film may be processed by a nanoimprint method, a sand blast method, a lift-off method, or the like.
- a photolithography method a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. After forming a photosensitive thin film, exposure and development are performed. And a method for processing the thin film into a desired shape.
- Examples of the light used for exposure in the photolithography method include i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), and light obtained by mixing these.
- ultraviolet light, KrF laser light, ArF laser light, or the like can be used.
- exposure may be performed by an immersion exposure technique.
- Examples of light used for exposure include extreme ultraviolet light (EUV: Extreme-violet) and X-rays.
- EUV Extreme-violet
- an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible. Note that a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
- etching the thin film For etching the thin film, a dry etching method, a wet etching method, a sand blasting method, or the like can be used.
- FIG. 7 shows a cross-sectional view of the display device 200B.
- the display device 200B includes a liquid crystal panel 80B that is a liquid crystal panel for display and a liquid crystal panel 90B that is a liquid crystal panel for dimming.
- the display device 200B further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the position of the colored layer 39 is different from the display device 200A.
- Other configurations are the same as those of the display device 200A.
- FIG. 7 can be said to be a specific example of a display device corresponding to the configuration example 3 (the display device 100C shown in FIG. 2A).
- the colored layer 39 is provided on the insulating layer 218 included in the liquid crystal panel 90B. Therefore, the light from the backlight unit 30 is incident on the liquid crystal element 50 and the liquid crystal element 40 after passing through the colored layer 39. Thereby, only light in a specific wavelength region is incident on the liquid crystal element 50 and the liquid crystal element 40. Even if the amount of light of the backlight is increased in order to increase the luminance of the display device 200B, the amount of light incident on the liquid crystal element can be reduced, so that a decrease in the reliability of the liquid crystal element can be suppressed and the liquid crystal element can be stabilized. Can be operated.
- FIG. 8 shows a cross-sectional view of the display device 200C.
- the display device 200C includes a liquid crystal panel 80C that is a liquid crystal panel for display and a liquid crystal panel 90C that is a liquid crystal panel for dimming.
- the display device 200 ⁇ / b> C further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the display device 200C does not include the substrate 11 and the substrate 22, but includes the flexible substrate 16, the flexible substrate 26, the adhesive layer 81a, the adhesive layer 81b, the insulating layer 82a, and the insulating layer 82b. Different from 200A. Other configurations are the same as those of the display device 200A.
- FIG. 8 can be said to be a specific example of a display device corresponding to Configuration Example 5 (display device 100G shown in FIG. 4A).
- FIG. 8 illustrates an example in which the liquid crystal panel 80C and the liquid crystal panel 90C have the same number of pixels (one liquid crystal element 50 is provided for one liquid crystal element 40).
- the number of pixels of the two liquid crystal panels is close or the same, parallax is particularly likely to occur. Therefore, it is effective to shorten the distance between the two liquid crystal elements using a flexible substrate. .
- a method for transferring an element manufactured on a hard substrate to a flexible substrate will be described.
- an insulating layer 82a is formed on a hard substrate with a peeling layer interposed therebetween, and a stacked structure from the transistor 13a to the alignment film 133c is formed.
- the liquid crystal layer 42 is sandwiched between the substrate 12 on which the laminated structure from the light shielding layer 38 to the alignment film 133d is formed and the hard substrate, and the substrate 12 and the hard substrate are bonded together using the adhesive layer 141b.
- the hard substrate is peeled off using the peeling layer, and the insulating layer 82a and the flexible substrate 16 are bonded together using the adhesive layer 81a.
- the insulating layer 82b is formed on the hard substrate through the peeling layer, and the electrode 53 and the alignment film 133b are further formed. Then, the liquid crystal layer 52 is sandwiched between the substrate 21 on which the stacked structure from the transistor 23a to the alignment film 133a is formed and the hard substrate, and the substrate 21 and the hard substrate are bonded together using the adhesive layer 141a. Thereafter, the hard substrate is peeled off using the peeling layer, and the insulating layer 82b and the flexible substrate 26 are bonded together using the adhesive layer 81b.
- FIG. 9 shows a cross-sectional view of the display device 200D.
- the display device 200D includes a liquid crystal panel 80D that is a liquid crystal panel for display and a liquid crystal panel 90D that is a liquid crystal panel for dimming.
- the display device 200D further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the display device 200D is different from the display device 200C in that the liquid crystal panel 80D has a configuration in which a part of the liquid crystal panel 80C (an element between the insulating layer 82a and the substrate 12) is turned upside down. Other configurations are the same as those of the display device 200C.
- the display device 200D illustrated in FIG. 9 can be regarded as a modification of the configuration example 5 (the display device 100H illustrated in FIG. 4B).
- the light from the backlight unit 30 is incident on the liquid crystal element 40 after passing through the colored layer 39.
- the amount of light of the backlight is increased in order to increase the luminance of the display device 200D, the amount of light incident on the liquid crystal element 40 can be reduced, so that a decrease in the reliability of the liquid crystal element 40 can be suppressed, and the liquid crystal element 40 can be operated stably.
- Configuration Example 8 an active matrix liquid crystal panel to which the IPS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel.
- the display device will be described.
- FIG. 10 shows a cross-sectional view of the display device 200E.
- the display device 200E includes a liquid crystal panel 80E that is a liquid crystal panel for display and a liquid crystal panel 90E that is a liquid crystal panel for dimming.
- the display device 200E further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- FIG. 10 can be said to be a specific example of a display device corresponding to Configuration Example 3 (display device 100D shown in FIG. 2B).
- the liquid crystal panel 90E is different from the liquid crystal panel 90A in the transistor structure. Other than that, it has the same configuration as the liquid crystal panel 90A.
- the display portion 162 is provided with a transistor 23b.
- the transistor 23b includes a conductive layer 221 functioning as a gate electrode, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231, an impurity semiconductor layer 232, a conductive layer 222a functioning as a source electrode and a drain electrode, and a conductive layer 222b.
- the transistor 23b is covered with an insulating layer 212.
- the transistor 23 b includes hydrogenated amorphous silicon in the semiconductor layer 231.
- the driver circuit portion 164 is provided with a transistor 201c.
- the transistor 201c has a structure similar to that of the transistor 23b.
- the liquid crystal panel 80E is different from the liquid crystal panel 80A in the structure of the transistor and the structure of the liquid crystal element. Other than that, it has the same configuration as the liquid crystal panel 80A.
- the transistor 13b and the transistor 201d have a structure similar to that of the transistor 23b and the transistor 201c.
- the display portion 162 is provided with a liquid crystal element 45.
- the liquid crystal element 45 is a liquid crystal element to which the IPS mode is applied.
- the liquid crystal element 45 includes an electrode 46, an electrode 48, and a liquid crystal layer 47.
- the alignment of the liquid crystal layer 47 can be controlled by an electric field generated between the electrode 46 and the electrode 48.
- the liquid crystal layer 47 is located between the alignment film 133c and the alignment film 133d.
- the alignment film can control the alignment of the liquid crystal layer 47.
- an alignment film 133c is provided so as to cover the electrode 46 and the electrode 48, and the alignment film 133d is located between the overcoat 121 and the liquid crystal layer 47.
- the electrode 46 and the electrode 48 have, for example, a comb-like upper surface shape (also referred to as a planar shape) or an upper surface shape provided with a slit.
- FIG. 11 is a cross-sectional view of the display device 200F.
- the display device 200F includes a liquid crystal panel 80F that is a liquid crystal panel for display and a liquid crystal panel 90F that is a liquid crystal panel for light control.
- the display device 200F further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- the position of the colored layer 39 is different from that of the display device 200E. Furthermore, the display device 200F is different from the display device 200E in that the liquid crystal panel 90F has a configuration in which the liquid crystal panel 90E is turned upside down. Note that the liquid crystal panel 90F has a colored layer 39 and an overcoat 121a in contact with the substrate 22. The other configuration is the same as that of the display device 200E.
- FIG. 11 can be said to be a specific example of a display device corresponding to Configuration Example 4 (display device 100F shown in FIG. 3B).
- the light from the backlight unit 30 passes through the colored layer 39 and then enters the liquid crystal element 50 and the liquid crystal element 45.
- the amount of light from the backlight is increased in order to increase the brightness of the display device, the amount of light incident on the liquid crystal element can be reduced, so that a decrease in the reliability of the liquid crystal element can be suppressed and the liquid crystal element can be stabilized. It can be operated.
- a transistor illustrated in FIG. 12A includes a conductive layer 221 functioning as a gate electrode, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231, a conductive layer 222a functioning as a source electrode and a drain electrode, and a conductive layer. 222b.
- the transistor illustrated in FIG. 12A includes low-temperature polysilicon (also referred to as low temperature poly-silicon or LTPS) in the semiconductor layer 231.
- low-temperature polysilicon also referred to as low temperature poly-silicon or LTPS
- the transistor illustrated in FIG. 12B functions as a conductive layer 221 functioning as a first gate electrode, an insulating layer 211 functioning as a first gate insulating layer, a semiconductor layer 231, and a source electrode and a drain electrode.
- the conductive layer 222a and the conductive layer 222b include a conductive layer 223 that functions as a second gate electrode, and an insulating layer 225 that functions as a second gate insulating layer.
- the semiconductor layer 231 includes a channel region and a low resistance region.
- a semiconductor layer 231 of the transistor illustrated in FIG. 12B includes a metal oxide. The channel region overlaps with the conductive layer 223 with the insulating layer 225 provided therebetween.
- the low resistance region includes a portion connected to the conductive layer 222a and a portion connected to the conductive layer 222b.
- the transistor illustrated in FIG. 12B has gates above and below a channel.
- the two gates are preferably electrically connected.
- a transistor in which two gates are electrically connected can have higher field-effect mobility than another transistor, and can increase on-state current.
- the area occupied by the circuit portion can be reduced.
- signal delay in each wiring can be reduced and display unevenness can be suppressed even if the number of wirings is increased by increasing the size or definition of the display device. Is possible.
- the display device can be narrowed.
- a highly reliable transistor can be realized.
- An insulating layer 212 and an insulating layer 213 are provided over the conductive layer 223, and a conductive layer 222a and a conductive layer 222b are provided thereover.
- the physical distance between the conductive layer 221 and the conductive layer 222a or the conductive layer 222b can be easily separated; thus, parasitic capacitance between them can be reduced. is there.
- ⁇ Configuration example of liquid crystal element> In the liquid crystal element 40 illustrated in FIG. 1 and the like, an example in which the electrode 41 functioning as a pixel electrode is not provided with a slit or an opening is described; however, one embodiment of the present invention is not limited thereto. As shown in FIGS. 13A to 13C, slits (or openings) may be provided in both the pixel electrode and the common electrode.
- the end of the slit of the electrode 41 and the end of the electrode 43 may be aligned.
- a cross-sectional view in this case is shown in FIG.
- the electrode 41 and the electrode 43 may have a portion where they overlap each other when viewed from above.
- a cross-sectional view in this case is shown in FIG.
- the electrode 41 and the electrode 43 may not be provided.
- a cross-sectional view in this case is shown in FIG.
- the configuration example illustrated in FIGS. 13A to 13C may be referred to as a kind of IPS mode.
- a configuration in which the pixel electrode and the common electrode are provided on the same plane is referred to as an IPS mode
- a configuration in which the pixel electrode and the common electrode are stacked via an insulating layer is described as an FFS mode.
- the configuration example shown in FIGS. 13A to 13C is also exemplified as a kind of FFS mode.
- an electrode 41 functioning as a pixel electrode may be provided over the electrode 43 functioning as a common electrode with an insulating layer 44 interposed therebetween.
- the electrode 41 and the transistor 13 are electrically connected through the opening of the electrode 43 and the insulating layer 44.
- Configuration Example 9 an active matrix liquid crystal panel to which the FFS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel.
- the touch panel will be described.
- FIG. 14 shows a cross-sectional view of the touch panel 210A.
- the touch panel 210A includes a liquid crystal panel 85A that is a liquid crystal panel for display and a liquid crystal panel 86A that is a liquid crystal panel for dimming.
- the touch panel 210 ⁇ / b> A further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- FIG. 14 can be said to be a specific example of a touch panel corresponding to Configuration Example 6 (touch panel 110A shown in FIG. 5A).
- the liquid crystal panel 85A has a function of displaying an image and a function as a touch sensor.
- the liquid crystal panel 85A is an active matrix liquid crystal panel to which the FFS mode is applied.
- the liquid crystal panel 85A is a transmissive liquid crystal panel.
- the liquid crystal panel 85A functions as a display panel.
- the liquid crystal panel 85A includes a substrate 11, a substrate 12, a transistor 13a, a transistor 13b, a liquid crystal element 40a, a liquid crystal element 40b, a light shielding layer 38, a colored layer 39, and the like.
- the liquid crystal element 40a includes an electrode 41a, a liquid crystal layer 42, and an electrode 43a.
- the liquid crystal element 40b includes an electrode 41b, a liquid crystal layer 42, and an electrode 43b.
- the source or drain of the transistor 13a is electrically connected to the electrode 41a.
- the source or drain of the transistor 13b is electrically connected to the electrode 41b.
- the electrode 41 a and the electrode 41 b are covered with an insulating layer 44, and the electrode 43 a and the electrode 43 b are provided on the insulating layer 44.
- the electrode 41a has a region overlapping with the electrode 43a with the insulating layer 44 interposed therebetween.
- the electrode 41a also has a region that does not overlap with the electrode 43a.
- the electrode 41b has a region overlapping with the electrode 43b with the insulating layer 44 interposed therebetween.
- the electrode 41b also has a region that does not overlap with the electrode 43b.
- the liquid crystal layer 42 is sandwiched between the alignment film 133c and the alignment film 133d.
- the electrode 43a and the electrode 43b are electrically insulated.
- the touch panel 210A can detect the proximity or contact of the detection target using a capacitance formed between the electrode 43a and the electrode 43b.
- the electrodes 43a and 43b serve as both the common electrode of the liquid crystal element and the electrode of the detection element.
- the liquid crystal panel 86A has the same configuration as the liquid crystal panel 90A (FIG. 6).
- the liquid crystal element 50 included in the liquid crystal panel 86A is placed so as to overlap with two or more liquid crystal elements included in the liquid crystal panel 85A (two liquid crystal elements 40a and 40b in FIG. 14). That is, dimming of two or more subpixels included in the touch panel 210 ⁇ / b> A can be performed using one liquid crystal element 50.
- Configuration Example 10 an active matrix liquid crystal panel to which the IPS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel.
- the touch panel will be described.
- FIG. 15 shows a cross-sectional view of the touch panel 210B.
- the touch panel 210B includes a liquid crystal panel 85B that is a liquid crystal panel for display and a liquid crystal panel 86B that is a liquid crystal panel for light control.
- the touch panel 210 ⁇ / b> B further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
- FIG. 15 can be said to be a specific example of a touch panel corresponding to Configuration Example 6 (touch panel 110B shown in FIG. 5B).
- the liquid crystal panel 85B has a function of displaying an image and a function as a touch sensor.
- the liquid crystal panel 85B has a configuration in which an electrode or the like constituting a detection element is provided only on the counter substrate (substrate 12).
- the configuration of the liquid crystal panel 111B illustrated in FIG. 5 can be referred to.
- the liquid crystal panel 86B has the same configuration as the liquid crystal panel 90A shown in FIG.
- the liquid crystal panel 85B and the liquid crystal panel 86B have different transistor structures and semiconductor materials.
- the structure, material, and the like of a transistor can be selected for each panel according to a difference in resolution of a liquid crystal panel, a difference in liquid crystal element, and the like.
- a large display module with high resolution can be manufactured using the display device of this embodiment.
- the resolution of an 8K4K display device is very high, with a horizontal resolution of 7680 and a vertical resolution of 4320.
- Recommendation ITU-R BT. 2020-2 As an international standard for 8K4K display devices, Recommendation ITU-R BT. 2020-2.
- the driving method is a progressive method, and the maximum frame frequency is 120 Hz.
- the image rewriting operation may not be in time during the frame period, and may not be driven.
- a structure in which a pixel region is divided into a plurality of (for example, four) pixels and a scan line driver circuit (also referred to as a gate driver) and a signal line driver circuit (also referred to as a source driver) are provided for each pixel region can be used.
- a scan line driver circuit also referred to as a gate driver
- a signal line driver circuit also referred to as a source driver
- two or more (typically two, three, or four) gate lines are simultaneously applied.
- a configuration in which a selection signal is supplied and two or more pixels adjacent in the column direction are simultaneously selected can be applied. Two or more pixels selected at the same time are connected to different source lines. That is, two or more source lines are arranged for each column.
- Such a configuration is preferable because it is less expensive than a configuration in which the pixel region is divided. From the fact that a circuit that synchronizes the divided pixel areas is unnecessary, the boundary portion of the divided pixel areas is not visually recognized, and the image processing for dividing the input image data is unnecessary. A configuration in which the pixel region is not divided is preferable.
- a display module having a configuration in which the pixel region is not divided will be described in detail.
- a display module having a structure in which a selection signal is supplied to each gate line and pixels are selected one by one will be described with reference to FIGS.
- a display module having a structure in which a selection signal is supplied to each of two gate lines and two pixels are selected will be described with reference to FIGS.
- FIG. 16A is a block diagram illustrating a structure of a display module.
- a selection signal is supplied to each gate line, and pixels are selected one by one.
- Both the gate driver GD and the source driver SD can be externally attached.
- One or both of the gate driver GD and the source driver SD may be built in the display device.
- the same signal is supplied to the gate line from the two gate drivers GD.
- a signal is supplied from one source driver SD to the source line.
- the pixel area (Pixel Area) is not divided.
- FIG. 16B shows a circuit diagram of the pixel PIX (i, j).
- the pixel PIX (i, j) includes a transistor M1, a capacitor C1, and a liquid crystal element LC.
- the gate of the transistor M1 is connected to the gate line GL (i).
- One of the source and the drain of the transistor M1 is connected to the source line SL (j), and the other is connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element LC.
- the other electrode of the capacitive element C1 is connected to the wiring CSCOM.
- the other electrode of the liquid crystal element LC is connected to the wiring TCOM.
- FIG. 17A is a block diagram illustrating a structure of a display module.
- selection signals are simultaneously supplied to two gate lines, and two adjacent pixels in the column direction are simultaneously selected.
- Both the gate driver GD and the source driver SD can be externally attached.
- One or both of the gate driver GD and the source driver SD may be built in the display device.
- the same signal is supplied to the gate line from the two gate drivers GD.
- the gate line GL 0 (i) is electrically connected to the gate line GL (i) and the gate line GL (i + 1), and the i-th and (i + 1) -th rows are driven simultaneously.
- a signal is supplied from one source driver SD to the source line.
- the pixel area is not divided.
- FIG. 17B is a circuit diagram of the pixel PIX (i, j) and the pixel PIX (i + 1, j).
- the pixel PIX (i, j) includes a transistor M1, a capacitor C1, and a liquid crystal element LC.
- the gate of the transistor M1 is connected to the gate line GL (i).
- One of the source and the drain of the transistor M1 is connected to the source line SL 1 (j), and the other is connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element LC.
- the other electrode of the capacitive element C1 is connected to the wiring CSCOM.
- the other electrode of the liquid crystal element LC is connected to the wiring TCOM.
- the pixel PIX (i + 1, j) includes a transistor M2, a capacitor element C2, and a liquid crystal element LC.
- the gate of the transistor M2 is connected to the gate line GL (i + 1).
- One of the source and the drain of the transistor M2 is connected to the source line SL 2 (j), and the other is connected to one electrode of the capacitor C2 and one electrode of the liquid crystal element LC.
- the other electrode of the capacitive element C2 is connected to the wiring CSCOM.
- the other electrode of the liquid crystal element LC is connected to the wiring TCOM.
- a liquid crystal panel for light control and a liquid crystal panel for display are used, and by applying liquid crystal elements and transistors suitable for the two liquid crystal panels, contrast, viewing angle characteristics, In addition, a display device with high reliability can be realized.
- each color is represented by a luminance of 256 gradations.
- each color is expressed by a luminance of 4096 gradations.
- FIG. 18A shows an example of VT characteristics (voltage-transmittance characteristics) of a liquid crystal element.
- shaft of FIG. 18 (A) shows the normalized transmittance
- 8 bits the transmittance from black to white is divided into 256 gradations.
- 12 bits it is divided into 4096 gradations. Therefore, when the voltage changes by the same value, in the case of 12 bits, a gradation change of about 16 times that of 8 bits occurs. In order to suppress the gradation shift, it is important to suppress the change in voltage.
- an oxide semiconductor is used for a semiconductor layer of a transistor.
- a transistor using an oxide semiconductor can have a much lower leakage current (off-state current) in a non-conduction state than a transistor using silicon or the like.
- increasing the resistivity of the liquid crystal material can be given.
- the specific resistivity of the liquid crystal material is preferably 1.0 ⁇ 10 14 ⁇ ⁇ cm or more, and more preferably 1.0 ⁇ 10 15 ⁇ ⁇ cm or more.
- the transmittance change amount ⁇ T per voltage change amount ⁇ V it is possible to reduce the transmittance change amount ⁇ T per voltage change amount ⁇ V. That is, it is preferable to reduce the inclination of the VT characteristic in the liquid crystal element.
- the inclination of the VT characteristic is reduced by controlling the rubbing angle of the alignment film.
- 18B1, (B2), (B3), (C1), (C2), and (C3) are schematic views of the electrodes of the liquid crystal element as viewed from above. Furthermore, in each of these figures, liquid crystal molecules 42m located on the electrodes are shown.
- the electrode 41 and the electrode 43 illustrated in FIGS. 18B1, (B2), (C1), and (C2) can be regarded as a pixel electrode and a common electrode included in an IPS mode liquid crystal element.
- an IPS mode liquid crystal element will be described as an example.
- the electrode 43 may be replaced with an electrode 41 to be applied to an FFS mode liquid crystal element.
- Can do. 18B3 and 18C can be regarded as a pixel electrode included in an FFS mode liquid crystal element, and the distance S can be regarded as a slit width of the electrode 41.
- the common electrode included in the FFS mode liquid crystal element is provided at a position overlapping the pixel electrode with the insulating layer interposed therebetween.
- FIG. 18B1 shows the direction of the liquid crystal molecules 42m when the voltage is OFF.
- FIG. 18B2 shows the direction of the liquid crystal molecules 42m and the direction of the electric field when the voltage is ON.
- Angle theta p shown in FIG. 18 (B1) is said the direction of the electric field, the orientation of the long axis of the liquid crystal molecules 42m when the voltage OFF, the the angle formed.
- the direction of the major axis of the liquid crystal molecules 42m when the voltage is OFF is substantially equal to the rubbing direction of the alignment film.
- the angle theta p may be referred to as the rubbing direction and the angle formed by the direction of the electric field of the alignment film.
- Angle theta p is preferably less than 80 ° greater than 50 °, more preferably less than 60 ° or 80 °, more preferably 60 ° to 70 ° or less.
- the inclination of VT characteristic can be made small and a high maximum transmittance can be maintained.
- the response speed can be increased.
- the transmittance variation can be reduced even when a voltage change occurs, and gradation shift can be suppressed.
- FIG. 18C1 shows the direction of the liquid crystal molecules 42m when the voltage is OFF.
- FIG. 18C2 shows the direction of the liquid crystal molecules 42m and the direction of the electric field when the voltage is ON.
- the angle ⁇ n shown in FIG. 18C1 can be said to be an angle formed by the direction of the electric field and the direction of the major axis of the liquid crystal molecules 42m when the voltage is OFF.
- the direction of the major axis of the liquid crystal molecules 42m when the voltage is OFF is substantially equal to the rubbing direction of the alignment film. That is, the angle ⁇ n can be rephrased as an angle formed by the rubbing direction of the alignment film and the electric field direction.
- the angle ⁇ n is preferably greater than 10 ° and less than 40 °, more preferably 20 ° or more and less than 40 °, and still more preferably 20 ° or more and 30 ° or less.
- the inclination of VT characteristic can be made small and a high maximum transmittance can be maintained.
- the response speed can be increased.
- the transmittance variation can be reduced even when a voltage change occurs, and gradation shift can be suppressed.
- An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor.
- a non-single-crystal oxide semiconductor a CAAC-OS (c-axis-aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, an nc-OS (nanocrystalline oxide semiconductor), a pseudo-amorphous oxide semiconductor (a-like oxide OS) : Amorphous-like oxide semiconductor) and amorphous oxide semiconductor.
- CAC-OS Cloud-Aligned Composite Oxide Semiconductor
- non-single-crystal oxide semiconductor or CAC-OS can be preferably used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention.
- non-single-crystal oxide semiconductor nc-OS or CAAC-OS can be preferably used.
- a CAC-OS is preferably used as the semiconductor layer of the transistor.
- the CAC-OS high electrical characteristics or high reliability can be imparted to the transistor.
- CAC-OS Details of the CAC-OS will be described below.
- the CAC-OS or the CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material.
- the conductive function is a function of flowing electrons (or holes) serving as carriers
- the insulating function is a carrier. This function prevents electrons from flowing.
- a function of switching (a function of turning on / off) can be imparted to CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.
- the CAC-OS or the CAC-metal oxide has a conductive region and an insulating region.
- the conductive region has the above-described conductive function
- the insulating region has the above-described insulating function.
- the conductive region and the insulating region may be separated at the nanoparticle level.
- the conductive region and the insulating region may be unevenly distributed in the material, respectively.
- the conductive region may be observed with the periphery blurred and connected in a cloud shape.
- the conductive region and the insulating region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.
- CAC-OS or CAC-metal oxide is composed of components having different band gaps.
- CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region.
- the carrier when the carrier flows, the carrier mainly flows in the component having the narrow gap.
- the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel formation region of a transistor, high current driving force, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.
- CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (metal matrix composite) or a metal matrix composite (metal matrix composite).
- the CAC-OS is one structure of a material in which an element constituting a metal oxide is unevenly distributed with a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or near.
- an element constituting a metal oxide is unevenly distributed with a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or near.
- a metal oxide one or more metal elements are unevenly distributed, and a region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm or near.
- the mixed state is also called mosaic or patch.
- the metal oxide preferably contains at least indium.
- One kind or plural kinds selected from may be included.
- a CAC-OS in In-Ga-Zn oxide is an indium oxide (hereinafter referred to as InO).
- X1 (X1 is greater real than 0) and.), or indium zinc oxide (hereinafter, in X2 Zn Y2 O Z2 ( X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic InO X1 or in X2 Zn Y2 O Z2, is a configuration in which uniformly distributed in the film (hereinafter, click Also called Udo-like.) A.
- CAC-OS includes a region GaO X3 is the main component, and In X2 Zn Y2 O Z2, or InO X1 is the main component region is a composite metal oxide having a structure that is mixed.
- the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.
- IGZO is a common name and sometimes refers to one compound of In, Ga, Zn, and O.
- ZnO ZnO
- the crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystal) structure.
- the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.
- CAC-OS relates to a material structure of a metal oxide.
- CAC-OS refers to a region that is observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn, and O, and nanoparticles that are partially composed mainly of In.
- the region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.
- the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions.
- a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.
- a region GaO X3 is the main component, and In X2 Zn Y2 O Z2 or InO X1 is the main component region, in some cases clear boundary can not be observed.
- the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In.
- the region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.
- the CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example.
- a CAC-OS is formed by a sputtering method
- any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good.
- the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .
- the CAC-OS has a feature that a clear peak is not observed when measurement is performed using a ⁇ / 2 ⁇ scan by an out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.
- XRD X-ray diffraction
- an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.
- a region in which GaO X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In X2 Zn Y2 O Z2 or InO X1 is a main component is unevenly distributed and mixed.
- EDX energy dispersive X-ray spectroscopy
- the CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That, CAC-OS includes a region which is the main component such as GaO X3, In X2 Zn Y2 O Z2 or InO X1 is phase-separated from each other in a region which is the main component, and a region mainly composed of the elements It has a mosaic structure.
- the region containing In X2 Zn Y2 O Z2 or InO X1 as a main component is a region having higher conductivity than a region containing GaO X3 or the like as a main component. That, In X2 Zn Y2 O Z2 or InO X1, is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In X2 Zn Y2 O Z2 or InO X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility ( ⁇ ) can be realized.
- areas such as GaO X3 is the main component, as compared to the In X2 Zn Y2 O Z2 or InO X1 is the main component area, it is highly regions insulating. That is, a region containing GaO X3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.
- CAC-OS when CAC-OS is used for a semiconductor element, the insulating property caused by GaO X3 and the like and the conductivity caused by In X2 Zn Y2 O Z2 or InO X1 act in a complementary manner, resulting in high An on-current (I on ) and high field effect mobility ( ⁇ ) can be realized.
- CAC-OS is optimal for various semiconductor devices including a display.
- FIG. 19A shows a block diagram of a television device 600.
- the television apparatus 600 includes a control unit 601, a storage unit 602, a communication control unit 603, an image processing circuit 604, a decoder circuit 605, a video signal receiving unit 606, a timing controller 607, a source driver 608, a gate driver 609, a display panel 620, A timing controller 647, a source driver 648, a gate driver 649, a dimming panel 650, and the like are included.
- the display panel included in the display device described in Embodiment 1 can be applied to the display panel 620 in FIG.
- the light control panel included in the display device illustrated in Embodiment 1 can be applied to the light control panel 650 in FIG. Accordingly, it is possible to realize a television device 600 that is large and has high resolution and high display quality.
- the control unit 601 can function as, for example, a central processing unit (CPU: Central Processing Unit).
- CPU Central Processing Unit
- the control unit 601 has a function of controlling components such as the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, and the video signal receiving unit 606 via the system bus 630.
- a signal is transmitted between the control unit 601 and each component via the system bus 630.
- the control unit 601 has a function of processing a signal input from each component connected via the system bus 630, a function of generating a signal output to each component, and the like, thereby being connected to the system bus 630.
- Each component can be controlled centrally.
- the storage unit 602 functions as a register, a cache memory, a main memory, a secondary memory, or the like that can be accessed by the control unit 601 and the image processing circuit 604.
- a storage device that can be used as the secondary memory for example, a storage device to which a rewritable nonvolatile storage element is applied can be used.
- a flash memory an MRAM (Magnetostatic Random Access Memory), a PRAM (Phase change RAM), a ReRAM (Resistive RAM), an FeRAM (Ferroelectric RAM), or the like can be used.
- a storage device that can be used as a temporary memory such as a register, a cache memory, or a main memory
- a volatile storage element such as a DRAM (Dynamic RAM) or an SRAM (Static Random Access Memory) may be used.
- a RAM provided in the main memory for example, a DRAM is used, and a memory space is virtually allocated and used as a work space of the control unit 601.
- the operating system, application program, program module, program data, etc. stored in the storage unit 602 are loaded into the RAM for execution. These data, programs, and program modules loaded in the RAM are directly accessed and operated by the control unit 601.
- the ROM can store BIOS (Basic Input / Output System), firmware and the like that do not require rewriting.
- BIOS Basic Input / Output System
- ROM mask ROM, OTPROM (One Time Programmable Read Only Memory), EPROM (Erasable Programmable Read Only Memory), etc. can be used.
- EPROM include UV-EPROM (Ultra-Violet Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), etc. that can erase stored data by ultraviolet irradiation.
- a removable storage device may be connected.
- a terminal for connecting to a recording medium drive such as a hard disk drive (Hard Disk Drive: HDD) or a solid state drive (SSD) that functions as a storage device, a recording medium such as a flash memory, a Blu-ray disc, or a DVD.
- a recording medium such as a flash memory, a Blu-ray disc, or a DVD.
- the communication control unit 603 has a function of controlling communication performed via a computer network.
- the control signal for connecting to the computer network is controlled in accordance with a command from the control unit 601, and the signal is transmitted to the computer network.
- the Internet, intranet, extranet, PAN (Personal Area Network), LAN (Local Area Network), CAN (Campus Area Network), and MAN (MetroApoNetwork) are the foundations of the World Wide Web (WWW).
- Communication can be performed by connecting to a computer network such as Wide Area Network (GA) or GAN (Global Area Network).
- the communication control unit 603 has a function of communicating with a computer network or other electronic devices using a communication standard such as Wi-Fi (registered trademark), Bluetooth (registered trademark), or ZigBee (registered trademark). Also good.
- a communication standard such as Wi-Fi (registered trademark), Bluetooth (registered trademark), or ZigBee (registered trademark). Also good.
- the communication control unit 603 may have a function of communicating wirelessly.
- an antenna and a high frequency circuit may be provided to transmit and receive an RF signal.
- the high-frequency circuit is a circuit for mutually converting an electromagnetic signal and an electric signal in a frequency band determined by the legislation of each country and performing communication with other communication devices wirelessly using the electromagnetic signal. Several tens of kHz to several tens of GHz is generally used as a practical frequency band.
- the high-frequency circuit connected to the antenna includes a high-frequency circuit unit corresponding to a plurality of frequency bands, and the high-frequency circuit unit includes an amplifier (amplifier), a mixer, a filter, a DSP, an RF transceiver, and the like. it can.
- the video signal receiving unit 606 includes, for example, an antenna, a demodulation circuit, an A / D conversion circuit (analog-digital conversion circuit), and the like.
- the demodulation circuit has a function of demodulating a signal input from the antenna.
- the A-D conversion circuit has a function of converting the demodulated analog signal into a digital signal.
- the signal processed by the video signal receiving unit 606 is sent to the decoder circuit 605.
- the decoder circuit 605 has a function of decoding video data included in a digital signal input from the video signal receiving unit 606 in accordance with the specification of a broadcast standard to be transmitted, and generating a signal to be transmitted to the image processing circuit.
- a broadcasting standard in 8K broadcasting H.264 is used.
- H.265 MPEG-H High Efficiency Video Coding (abbreviation: HEVC).
- broadcast radio waves that can be received by the antenna included in the video signal receiving unit 606 include ground waves or radio waves transmitted from satellites.
- Broadcast radio waves that can be received by an antenna include analog broadcast and digital broadcast, and also includes video and audio, or audio-only broadcast.
- broadcast radio waves transmitted in a specific frequency band in the UHF band (about 300 MHz to 3 GHz) or the VHF band (30 MHz to 300 MHz) can be received.
- the transfer rate can be increased and more information can be obtained. Accordingly, an image having a resolution exceeding full high-definition can be displayed on the display panel 620. For example, an image having a resolution of 4K2K, 8K4K, 16K8K, or higher can be displayed.
- the video signal receiving unit 606 and the decoder circuit 605 may be configured to generate a signal to be transmitted to the image processing circuit 604 using broadcast data transmitted by a data transmission technique via a computer network.
- the video signal receiving unit 606 may not include a demodulation circuit, an A-D conversion circuit, and the like.
- the image processing circuit 604 has a function of generating a video signal to be output to the timing controller 607 based on the video signal input from the decoder circuit 605.
- the image processing circuit 604 has a function of generating a signal to be output to the timing controller 647 based on the video signal input from the decoder circuit 605.
- the image processing circuit 604 may further have a function of generating a signal to be output to the backlight unit based on the video signal input from the decoder circuit 605.
- the timing controller 607 generates a signal (a signal such as a clock signal or a start pulse signal) to be output to the gate driver 609 and the source driver 608 based on the synchronization signal included in the video signal processed by the image processing circuit 604. It has the function to do.
- the timing controller 607 has a function of generating a video signal to be output to the source driver 608 in addition to the above signals.
- the display panel 620 includes a plurality of pixels 621. Each pixel 621 is driven by signals supplied from the gate driver 609 and the source driver 608.
- a display panel having a resolution according to the 8K4K standard having the number of pixels of 7680 ⁇ 4320 is shown. Note that the resolution of the display panel 620 is not limited to this, and may be a resolution according to a standard such as full high-definition (pixel number 1920 ⁇ 1080) or 4K2K (pixel number 3840 ⁇ 2160).
- the timing controller 647 has a function of generating signals to be output to the gate driver 649 and the source driver 648 based on a synchronization signal included in the signal processed by the image processing circuit 604.
- the timing controller 647 has a function of generating a video signal to be output to the source driver 648 in addition to the above signals.
- One timing controller may generate a signal for driving both the display panel 620 and the light control panel 650.
- the light control panel 650 includes a plurality of pixels 651. Each pixel 651 is driven by signals supplied from the gate driver 649 and the source driver 648. The number of pixels of the light control panel 650 may be the same as or different from that of the display panel 620.
- control unit 601 and the image processing circuit 604 illustrated in FIG. 19A can include a processor.
- the control unit 601 can use a processor that functions as a CPU.
- image processing circuit 604 other processors such as a DSP (Digital Signal Processor) and a GPU (Graphics Processing Unit) can be used.
- the control unit 601 and the image processing circuit 604 may have a configuration in which the processor is realized by a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or an FPAA (Field Programmable Analog Array).
- PLD Programmable Logic Device
- FPGA Field Programmable Gate Array
- FPAA Field Programmable Analog Array
- the processor performs various data processing and program control by interpreting and executing instructions from various programs.
- the program that can be executed by the processor may be stored in a memory area of the processor, or may be stored in a storage device provided separately.
- control unit 601, the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, the video signal receiving unit 606, the timing controller 607, and the timing controller 647 are provided. These functions may be integrated into one IC chip to constitute a system LSI.
- a system LSI including a processor, a decoder circuit, a tuner circuit, an A / D conversion circuit, a DRAM, and an SRAM may be used.
- a transistor in which an oxide semiconductor is used for a channel formation region and an extremely low off-state current is realized can be used for the controller 601, an IC included in another component, or the like. Since the transistor has extremely low off-state current, the use of the transistor as a switch for holding charge (data) flowing into the capacitor functioning as a memory element can ensure a data holding period for a long time. it can. By using this characteristic for a register such as the control unit 601 or a cache memory, the control unit 601 is operated only when necessary, and in other cases, information on the immediately preceding process is saved in the storage element, so that it is normally. Off-computing becomes possible. Thereby, the power consumption of the television apparatus 600 can be reduced.
- the structure of the television device 600 in FIG. 19A is just an example, and it is not necessary to include all of the components.
- the television set 600 only needs to include necessary components from among the components illustrated in FIG.
- the television device 600 may include a component other than the components illustrated in FIG.
- the television device 600 may include an external interface, an audio output unit, a touch panel unit, a sensor unit, a camera unit, and the like in addition to the configuration illustrated in FIG.
- an external interface for example, a USB (Universal Serial Bus) terminal, a LAN (Local Area Network) connection terminal, a power receiving terminal, an audio output terminal, an audio input terminal, an image output terminal, an image input terminal, etc.
- the sound input / output unit includes a sound controller, a microphone, a speaker, and the like.
- the image processing circuit 604 preferably has a function of executing image processing based on the video signal input from the decoder circuit 605.
- Examples of image processing include noise removal processing, gradation conversion processing, color tone correction processing, and luminance correction processing.
- Examples of the color tone correction process and the brightness correction process include gamma correction.
- the image processing circuit 604 preferably has a function of executing processing such as inter-pixel interpolation processing accompanying resolution up-conversion and inter-frame interpolation processing accompanying frame frequency up-conversion.
- noise removal processing various noises such as mosquito noise generated around the outline of characters, block noise generated in high-speed moving images, flickering random noise, and dot noise generated by resolution up-conversion are removed.
- the gradation conversion process is a process for converting the gradation of an image into a gradation corresponding to the output characteristics of the display panel 620. For example, when the number of gradations is increased, a process for smoothing the histogram can be performed by interpolating and assigning gradation values corresponding to each pixel to an image input with a small number of gradations. Further, a high dynamic range (HDR) process for expanding the dynamic range is also included in the gradation conversion process.
- HDR high dynamic range
- the inter-pixel interpolation process interpolates data that does not originally exist when the resolution is up-converted. For example, referring to pixels around the target pixel, the data is interpolated so as to display the intermediate colors.
- the color tone correction process is a process for correcting the color tone of an image.
- the brightness correction process is a process for correcting the brightness (brightness contrast) of the image. For example, the type, brightness, or color purity of the illumination in the space where the television apparatus 600 is provided is detected, and the brightness and color tone of the image displayed on the display panel 620 are corrected accordingly. Or, it has a function to compare the image to be displayed with the images of various scenes in the image list stored in advance, and to correct the image displayed with brightness and color tone suitable for the image of the closest scene. May be.
- Interframe interpolation generates an image of a frame (interpolation frame) that does not originally exist when the frame frequency of a video to be displayed is increased.
- an interpolation frame image to be inserted between two images is generated from the difference between two images.
- an image of a plurality of interpolation frames can be generated between two images.
- the frame frequency of the video signal input from the decoder circuit 605 is 60 Hz
- the frame frequency of the video signal output to the timing controller 607 is doubled by 120 Hz by generating a plurality of interpolation frames, or It can be increased to 4 times 240 Hz or 8 times 480 Hz.
- the image processing circuit 604 preferably has a function of executing image processing using a neural network.
- FIG. 19A shows an example in which the image processing circuit 604 includes a neural network 610.
- the neural network 610 can perform feature extraction from image data included in a video, for example.
- the image processing circuit 604 can select an optimal correction method according to the extracted features, or can select parameters used for correction.
- the neural network 610 itself may have a function of performing image processing. That is, the image data that has been subjected to image processing may be output by inputting the image data before being subjected to image processing to the neural network 610.
- weight coefficient data used for the neural network 610 is stored in the storage unit 602 as a data table.
- the data table including the weighting coefficient can be updated to the latest one via the computer network by the communication control unit 603, for example.
- the image processing circuit 604 may have a learning function so that a data table including a weighting factor can be updated.
- the image processing circuit 604 preferably has a function of generating a signal indicating the transmittance distribution in the transmission region of the light control panel 650 based on the video signal input from the decoder circuit 605. It is preferable to use a neural network 610 for generating the signal.
- the image processing circuit 604 preferably has a function of generating a signal indicating luminance in the backlight unit based on the video signal input from the decoder circuit 605. It is preferable to use a neural network 610 for generating the signal.
- FIG. 19B shows a schematic diagram of a neural network 610 included in the image processing circuit 604.
- a neural network refers to a general model that imitates a biological neural network, determines the connection strength between neurons by learning, and has problem solving ability.
- the neural network has an input layer, an intermediate layer (also referred to as a hidden layer), and an output layer.
- a neural network having two or more intermediate layers is called a deep neural network (DNN), and learning by the deep neural network is called “deep learning”.
- determining the connection strength (also referred to as a weighting factor) between neurons from existing information may be referred to as “learning”.
- “inference” refers to constructing a neural network using the connection strength obtained by learning and deriving a new conclusion therefrom.
- the neural network 610 includes an input layer 611, one or more intermediate layers 612, and an output layer 613. Input data is input to the input layer 611. Output data is output from the output layer 613.
- the input layer 611, the intermediate layer 612, and the output layer 613 each have a neuron 615.
- the neuron 615 indicates a circuit element (product-sum operation element) capable of realizing product-sum operation.
- FIG. 19B the input / output direction of data between two neurons 615 included in two layers is indicated by arrows.
- f (x) is an activation function, and a sigmoid function, a threshold function, or the like can be used.
- the output of the neuron 615 of each layer is a value obtained by calculating the activation function on the product-sum operation result of the output of the neuron 615 of the previous layer and the weight coefficient.
- the connection between layers may be a total connection in which all neurons are connected, or a partial connection in which some neurons are connected.
- FIG. 19B illustrates an example having three intermediate layers 612. Note that the number of the intermediate layers 612 is not limited to this, and it is only necessary to include one or more intermediate layers. In addition, the number of neurons included in one intermediate layer 612 may be changed as appropriate according to specifications. For example, the number of neurons 615 included in one intermediate layer 612 may be larger or smaller than the number of neurons 615 included in the input layer 611 or the output layer 613.
- a weighting factor that is an index of the strength of connection between the neurons 615 is determined by learning.
- the learning may be executed by a processor included in the television apparatus 600, but is preferably executed by a computer having an excellent arithmetic processing capability such as a dedicated server or a cloud.
- the weighting coefficient determined by learning is stored in the storage unit 602 as a table and is used by being read out by the image processing circuit 604.
- the table can be updated via a computer network as necessary.
- the electronic device of this embodiment includes the display device of one embodiment of the present invention in the display portion. Therefore, the electronic device has a high contrast ratio. In addition, the electronic device can achieve both a high contrast ratio and a large screen.
- full high vision, 4K2K, 8K4K, 16K8K, or higher resolution video can be displayed on the display portion of the electronic device of this embodiment.
- the screen size of the display unit can be 20 inches or more diagonal, 30 inches or more, 50 inches or more, 60 inches or more, or 70 inches or more.
- the frame frequency of the display unit can be 60 Hz or higher or 120 Hz or higher, and specifically 240 Hz.
- the gradation of the image displayed on the display unit can be 8 bits or more or 12 bits or more.
- Examples of electronic devices include relatively large screens such as television devices, desktop or notebook personal computers, monitors for computers, digital signage (digital signage), and large game machines such as pachinko machines.
- a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, a sound reproduction device, and the like can be given.
- the electronic device of this embodiment can be incorporated along a curved surface of an inner wall or an outer wall of a house or a building, or an interior or exterior of an automobile.
- the electronic device of this embodiment may include an antenna. By receiving a signal with an antenna, video, information, and the like can be displayed on the display unit.
- the antenna may be used for non-contact power transmission.
- the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage. , Power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared measurement function).
- the electronic device of this embodiment can have various functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, a function for executing various software (programs), and wireless communication A function, a function of reading a program or data recorded on a recording medium, and the like can be provided.
- FIG. 20A illustrates an example of a television set.
- a display portion 7000 is incorporated in a housing 7101.
- a structure in which the housing 7101 is supported by a stand 7103 is shown.
- the display device of one embodiment of the present invention can be applied to the display portion 7000.
- Operation of the television device 7100 illustrated in FIG. 20A can be performed with an operation switch included in the housing 7101 or a separate remote controller 7111.
- the display unit 7000 may be provided with a touch sensor, and may be operated by touching the display unit 7000 with a finger or the like.
- the remote controller 7111 may include a display unit that displays information output from the remote controller 7111. Channels and volume can be operated with an operation key or a touch panel included in the remote controller 7111, and an image displayed on the display portion 7000 can be operated.
- the television device 7100 is provided with a receiver, a modem, and the like.
- a general television broadcast can be received by the receiver.
- information communication is performed in one direction (from the sender to the receiver) or in two directions (between the sender and the receiver or between the receivers). It is also possible.
- FIG. 20B illustrates an example of a laptop personal computer.
- a laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
- a display portion 7000 is incorporated in the housing 7211.
- the display device of one embodiment of the present invention can be applied to the display portion 7000.
- FIGS. 20C and 20D show examples of digital signage.
- a digital signage 7300 illustrated in FIG. 20C includes a housing 7301, a display portion 7000, a speaker 7303, and the like. Furthermore, an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like can be provided.
- FIG. 20D illustrates a digital signage 7400 attached to a columnar column 7401.
- the digital signage 7400 includes a display portion 7000 provided along the curved surface of the column 7401.
- the display device of one embodiment of the present invention can be applied to the display portion 7000.
- the wider the display unit 7000 the more information can be provided at one time.
- the wider the display unit 7000 the more easily noticeable to the human eye.
- the advertising effect can be enhanced.
- a touch panel By applying a touch panel to the display unit 7000, not only an image or a moving image is displayed on the display unit 7000, but also a user can operate intuitively, which is preferable. In addition, when it is used for providing information such as route information or traffic information, usability can be improved by an intuitive operation.
- the digital signage 7300 or the digital signage 7400 can be linked with the information terminal 7311 or the information terminal 7411 such as a smartphone possessed by the user by wireless communication. Is preferred.
- advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Further, the display on the display unit 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.
- the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). Thereby, an unspecified number of users can participate and enjoy the game at the same time.
- the liquid crystal panel is less likely to cause gradation shift even when the voltage changes.
- the width L of the electrode 41 shown in FIG. 18B3 is 3 ⁇ m, and the slit width (distance S) of the electrode 41 is 4 ⁇ m. Note that the thickness of the insulating layer sandwiched between the electrode 41 and the common electrode was 600 nm.
- the width L of the electrode 41 shown in FIG. 18 (C3) was 3 ⁇ m, and the slit width (distance S) of the electrode 41 was 4 ⁇ m. Note that the thickness of the insulating layer sandwiched between the electrode 41 and the common electrode was 600 nm.
- the width L of the electrode 41 and the electrode 43 shown in FIG. 18B1 is 3 ⁇ m, and the distance S between the electrode 41 and the electrode 43 is 7 ⁇ m.
- the preferable range of the angle formed by the rubbing direction of the alignment film and the direction of the electric field was examined in consideration of the slope of the VT characteristic, the driving voltage, the response speed, and the like.
- the angle theta p is preferably less than 80 ° greater than 50 °, more preferably less than 60 ° or 80 °, more preferably 60 ° to 70 ° or less.
- the angle ⁇ n is preferably greater than 10 ° and less than 40 °, more preferably 20 ° or more and less than 40 °, and further preferably 20 ° or more and 30 ° or less.
Abstract
Provided is a display device having a high contrast ratio. The display device includes a first liquid crystal panel (20A) and a second liquid crystal panel (10A). Light that has passed through the first liquid crystal panel (20A) is incident to the second liquid crystal panel (10A). The second liquid crystal panel (10A) displays an image by selectively allowing light to pass therethrough. The first liquid crystal panel (20A) and the second liquid crystal panel (10A) operate in mutually different modes. For example, the first liquid crystal panel (20A) operates in TN mode, and the second liquid crystal panel (10A) operates in IPS mode or FFS mode.
Description
本発明の一態様は、液晶表示装置、モジュール、及び電子機器に関する。
One embodiment of the present invention relates to a liquid crystal display device, a module, and an electronic device.
なお、本発明の一態様は、上記の技術分野に限定されない。本発明の一態様の技術分野としては、半導体装置、表示装置、発光装置、電子機器、照明装置、入出力装置（例えば、タッチパネルなど）、それらの駆動方法、またはそれらの製造方法を一例として挙げることができる。
Note that one embodiment of the present invention is not limited to the above technical field. As a technical field of one embodiment of the present invention, a semiconductor device, a display device, a light-emitting device, an electronic device, a lighting device, an input / output device (eg, a touch panel), a driving method thereof, or a manufacturing method thereof is given as an example. be able to.
なお、本明細書等において、半導体装置とは、半導体特性を利用することで機能しうる装置全般を指す。表示装置（液晶表示装置、発光表示装置など）、投影装置、照明装置、電気光学装置、蓄電装置、記憶装置、半導体回路、撮像装置、及び電子機器などは、半導体装置といえる場合がある。もしくは、これらは半導体装置を有するといえる場合がある。
Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A display device (a liquid crystal display device, a light-emitting display device, or the like), a projection device, a lighting device, an electro-optical device, a power storage device, a memory device, a semiconductor circuit, an imaging device, an electronic device, or the like may be referred to as a semiconductor device. Alternatively, it may be said that these include semiconductor devices.
近年、解像度の高い表示装置が求められている。例えば、フルハイビジョン（画素数１９２０×１０８０）、４Ｋ（画素数３８４０×２１６０もしくは４０９６×２１６０等）、さらには８Ｋ（画素数７６８０×４３２０もしくは８１９２×４３２０等）といった画素数の多い表示装置が盛んに開発されている。
In recent years, display devices with high resolution have been demanded. For example, display devices with a large number of pixels such as full high-definition (pixel count 1920 × 1080), 4K (pixel count 3840 × 2160 or 4096 × 2160, etc.) and 8K (pixel count 7680 × 4320 or 8192 × 4320 etc.) are popular. Has been developed.
表示装置としては、液晶表示装置や発光表示装置に代表されるフラットパネルディスプレイが広く用いられている。これらの表示装置を構成するトランジスタの半導体材料には主にシリコンが用いられているが、近年、金属酸化物を用いたトランジスタを表示装置の画素に用いる技術も開発されている。
As a display device, a flat panel display represented by a liquid crystal display device or a light emitting display device is widely used. Silicon is mainly used as a semiconductor material of transistors constituting these display devices, but in recent years, a technique using a transistor using a metal oxide for a pixel of a display device has also been developed.
特許文献１には、トランジスタの半導体材料に非晶質シリコンを用いる技術が開示されている。特許文献２及び特許文献３には、トランジスタの半導体材料に金属酸化物を用いる技術が開示されている。
Patent Document 1 discloses a technique using amorphous silicon as a semiconductor material of a transistor. Patent Documents 2 and 3 disclose a technique using a metal oxide as a semiconductor material of a transistor.
本発明の一態様は、コントラスト比が高い表示装置を提供することを課題の一とする。本発明の一態様は、視野角の広い表示装置を提供することを課題の一とする。本発明の一態様は、解像度の高い表示装置を提供することを課題の一とする。本発明の一態様は、高いフレーム周波数で動作可能な表示装置を提供することを課題の一とする。本発明の一態様は、大型の表示装置を提供することを課題の一とする。本発明の一態様は、信頼性の高い表示装置を提供することを目的の一とする。
An object of one embodiment of the present invention is to provide a display device with a high contrast ratio. An object of one embodiment of the present invention is to provide a display device with a wide viewing angle. An object of one embodiment of the present invention is to provide a display device with high resolution. An object of one embodiment of the present invention is to provide a display device that can operate at a high frame frequency. An object of one embodiment of the present invention is to provide a large display device. An object of one embodiment of the present invention is to provide a highly reliable display device.
なお、これらの課題の記載は、他の課題の存在を妨げるものではない。本発明の一態様は、必ずしも、これらの課題の全てを解決する必要はないものとする。明細書、図面、請求項の記載から、これら以外の課題を抽出することが可能である。
Note that the description of these problems does not disturb the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Issues other than these can be extracted from the description, drawings, and claims.
本発明の一態様は、第１の液晶パネルと第２の液晶パネルとを有する表示装置である。第２の液晶パネルには、第１の液晶パネルを透過した光が入射する。第２の液晶パネルは、光を選択的に透過することで、画像を表示する。第１の液晶パネルと第２の液晶パネルとは、互いに異なるモードで動作する。
One embodiment of the present invention is a display device including a first liquid crystal panel and a second liquid crystal panel. The light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel. The second liquid crystal panel displays an image by selectively transmitting light. The first liquid crystal panel and the second liquid crystal panel operate in different modes.
第１の液晶パネルは、ＴＮ（Ｔｗｉｓｔｅｄ Ｎｅｍａｔｉｃ）モードで動作することが好ましい。第２の液晶パネルは、ＩＰＳ（Ｉｎ−Ｐｌａｎｅ−Ｓｗｉｔｃｈｉｎｇ）モードまたはＦＦＳ（Ｆｒｉｎｇｅ Ｆｉｅｌｄ Ｓｗｉｔｃｈｉｎｇ）モードで動作することが好ましい。
The first liquid crystal panel preferably operates in a TN (Twisted Nematic) mode. The second liquid crystal panel preferably operates in an IPS (In-Plane-Switching) mode or an FFS (Fringe Field Switching) mode.
なお、本明細書等では、画素電極と共通電極とが同一平面上に設けられる構成をＩＰＳモードとし、画素電極と共通電極とが絶縁層を介して積層される構成をＦＦＳモードとして説明する。
Note that in this specification and the like, a configuration in which the pixel electrode and the common electrode are provided on the same plane is described as an IPS mode, and a configuration in which the pixel electrode and the common electrode are stacked with an insulating layer interposed therebetween is described as an FFS mode.
本発明の一態様の表示装置は、さらに、第１の偏光板、第２の偏光板、及び第３の偏光板を有することが好ましい。第１の液晶パネルは、第１の偏光板と第２の偏光板の間に位置することが好ましい。第２の液晶パネルは、第２の偏光板と第３の偏光板の間に位置することが好ましい。第２の液晶パネルには、第１の液晶パネルを透過した光が、第２の偏光板を介して入射することが好ましい。第１の偏光板と第２の偏光板とは、第１の方向の偏光軸を有することが好ましい。第３の偏光板は、第１の方向と交差する第２の方向の偏光軸を有することが好ましい。
The display device of one embodiment of the present invention preferably further includes a first polarizing plate, a second polarizing plate, and a third polarizing plate. The first liquid crystal panel is preferably located between the first polarizing plate and the second polarizing plate. The second liquid crystal panel is preferably located between the second polarizing plate and the third polarizing plate. It is preferable that the light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel via the second polarizing plate. The first polarizing plate and the second polarizing plate preferably have a polarization axis in the first direction. The third polarizing plate preferably has a polarization axis in a second direction that intersects the first direction.
第２の液晶パネルは、タッチセンサの機能を有することが好ましい。
The second liquid crystal panel preferably has a touch sensor function.
第１の液晶パネルは、第１の基板及び第２の基板を有することが好ましい。第２の液晶パネルは、第３の基板及び第４の基板を有することが好ましい。第２の偏光板は、第２の基板と第３の基板との間に位置することが好ましい。第２の基板は、第１の基板よりも、第２の液晶パネル側に位置することが好ましい。第３の基板は、第４の基板よりも、第１の液晶パネル側に位置することが好ましい。第２の基板の厚さは、第１の基板の厚さよりも薄いことが好ましい。第３の基板の厚さは、第４の基板の厚さよりも薄いことが好ましい。第２の基板及び第３の基板は、それぞれ、樹脂を有することが好ましい。
The first liquid crystal panel preferably has a first substrate and a second substrate. The second liquid crystal panel preferably has a third substrate and a fourth substrate. The second polarizing plate is preferably located between the second substrate and the third substrate. The second substrate is preferably located closer to the second liquid crystal panel than the first substrate. The third substrate is preferably located closer to the first liquid crystal panel than the fourth substrate. The thickness of the second substrate is preferably thinner than the thickness of the first substrate. The thickness of the third substrate is preferably thinner than the thickness of the fourth substrate. Each of the second substrate and the third substrate preferably includes a resin.
第２の液晶パネルは、一対の配向膜の間に液晶層を有することが好ましい。液晶層が、誘電異方性が正である液晶材料を有するとき、一対の配向膜の少なくとも一方のラビング方向と電界の方向とがなす角度は、５０°より大きく８０°未満であることが好ましい。また、液晶層が、誘電異方性が負である液晶材料を有するとき、一対の配向膜の少なくとも一方のラビング方向と電界の方向とがなす角度は、１０°より大きく４０°未満であることが好ましい。
The second liquid crystal panel preferably has a liquid crystal layer between a pair of alignment films. When the liquid crystal layer includes a liquid crystal material having positive dielectric anisotropy, the angle formed by at least one rubbing direction of the pair of alignment films and the electric field direction is preferably greater than 50 ° and less than 80 °. . In addition, when the liquid crystal layer includes a liquid crystal material having negative dielectric anisotropy, an angle formed by at least one rubbing direction of the pair of alignment films and the electric field direction is greater than 10 ° and less than 40 °. Is preferred.
表示装置のコントラスト比は、１０００００：１以上であることが好ましい。
The contrast ratio of the display device is preferably 100,000: 1 or more.
第２の液晶パネルは、４Ｋ以上の解像度を有することが好ましい。
The second liquid crystal panel preferably has a resolution of 4K or higher.
第２の液晶パネルは、１２ビット以上のカラーを表示する機能を有することが好ましい。
The second liquid crystal panel preferably has a function of displaying a color of 12 bits or more.
第２の液晶パネルのフレーム周波数は、１２０Ｈｚ以上であることが好ましい。
The frame frequency of the second liquid crystal panel is preferably 120 Hz or more.
第２の液晶パネルは、アクティブマトリクス型であることが好ましい。第２の液晶パネルは、液晶素子とトランジスタとを有し、トランジスタは、液晶素子と電気的に接続される。トランジスタのチャネル形成領域は、金属酸化物を有することが好ましい。または、トランジスタのチャネル形成領域は、水素化アモルファスシリコンを有することが好ましい。
The second liquid crystal panel is preferably an active matrix type. The second liquid crystal panel includes a liquid crystal element and a transistor, and the transistor is electrically connected to the liquid crystal element. The channel formation region of the transistor preferably includes a metal oxide. Alternatively, the channel formation region of the transistor preferably includes hydrogenated amorphous silicon.
本発明の一態様は、上記いずれかの構成の表示装置と、回路基板を有する表示モジュールである。
One embodiment of the present invention is a display module having any one of the above structures and a circuit board.
本発明の一態様は、上記いずれかの構成の表示装置を有し、フレキシブルプリント回路基板（Ｆｌｅｘｉｂｌｅ ｐｒｉｎｔｅｄ ｃｉｒｃｕｉｔ、以下、ＦＰＣと記す）もしくはＴＣＰ（Ｔａｐｅ Ｃａｒｒｉｅｒ Ｐａｃｋａｇｅ）等のコネクタが取り付けられた表示モジュール、またはＣＯＧ（Ｃｈｉｐ Ｏｎ Ｇｌａｓｓ）方式もしくはＣＯＦ（Ｃｈｉｐ Ｏｎ Ｆｉｌｍ）方式等によりＩＣが実装された表示モジュール等の表示モジュールである。
One embodiment of the present invention includes a display device having any one of the above structures, and a display module to which a connector such as a flexible printed circuit board (hereinafter referred to as FPC) or a TCP (Tape Carrier Package) is attached. Or a display module such as a display module in which an IC is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method.
本発明の一態様は、上記の表示モジュールと、アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、または操作ボタンの少なくともいずれか一と、を有する電子機器である。
One embodiment of the present invention is an electronic device including the above display module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.
本発明の一態様により、コントラスト比が高い表示装置を提供できる。本発明の一態様により、視野角の広い表示装置を提供できる。本発明の一態様により、解像度の高い表示装置を提供できる。本発明の一態様により、高いフレーム周波数で動作可能な表示装置を提供できる。本発明の一態様により、大型の表示装置を提供できる。本発明の一態様により、信頼性の高い表示装置を提供できる。
According to one embodiment of the present invention, a display device with a high contrast ratio can be provided. According to one embodiment of the present invention, a display device with a wide viewing angle can be provided. According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a display device that can operate at a high frame frequency can be provided. According to one embodiment of the present invention, a large display device can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.
なお、これらの効果の記載は、他の効果の存在を妨げるものではない。本発明の一態様は、必ずしも、これらの効果の全てを有する必要はない。明細書、図面、請求項の記載から、これら以外の効果を抽出することが可能である。
Note that the description of these effects does not disturb the existence of other effects. One embodiment of the present invention need not necessarily have all of these effects. Effects other than these can be extracted from the description, drawings, and claims.
実施の形態について、図面を用いて詳細に説明する。但し、本発明は以下の説明に限定されず、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは当業者であれば容易に理解される。従って、本発明は以下に示す実施の形態の記載内容に限定して解釈されるものではない。
Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.
なお、以下に説明する発明の構成において、同一部分または同様な機能を有する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。また、同様の機能を指す場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.
また、図面において示す各構成の、位置、大きさ、範囲などは、理解の簡単のため、実際の位置、大きさ、範囲などを表していない場合がある。このため、開示する発明は、必ずしも、図面に開示された位置、大きさ、範囲などに限定されない。
In addition, the position, size, range, and the like of each component illustrated in the drawings may not represent the actual position, size, range, or the like for easy understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, range, or the like disclosed in the drawings.
なお、「膜」という言葉と、「層」という言葉とは、場合によっては、または、状況に応じて、互いに入れ替えることが可能である。例えば、「導電層」という用語を、「導電膜」という用語に変更することが可能である。または、例えば、「絶縁膜」という用語を、「絶縁層」という用語に変更することが可能である。
Note that the terms “film” and “layer” can be interchanged with each other depending on the case or circumstances. For example, the term “conductive layer” can be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” can be changed to the term “insulating layer”.
（実施の形態１）
本実施の形態では、本発明の一態様の表示装置について図１~図１７を用いて説明する。 (Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.
本実施の形態では、本発明の一態様の表示装置について図１~図１７を用いて説明する。 (Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.
＜表示装置の概要＞
本実施の形態の表示装置は、第１の液晶パネルと第２の液晶パネルとを有する。第２の液晶パネルには、第１の液晶パネルを透過した光が入射する。第２の液晶パネルは、光を選択的に透過することで、画像を表示する。第１の液晶パネルと第２の液晶パネルとは、互いに異なるモードで動作する。 <Outline of display device>
The display device of this embodiment includes a first liquid crystal panel and a second liquid crystal panel. The light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel. The second liquid crystal panel displays an image by selectively transmitting light. The first liquid crystal panel and the second liquid crystal panel operate in different modes.
本実施の形態の表示装置は、第１の液晶パネルと第２の液晶パネルとを有する。第２の液晶パネルには、第１の液晶パネルを透過した光が入射する。第２の液晶パネルは、光を選択的に透過することで、画像を表示する。第１の液晶パネルと第２の液晶パネルとは、互いに異なるモードで動作する。 <Outline of display device>
The display device of this embodiment includes a first liquid crystal panel and a second liquid crystal panel. The light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel. The second liquid crystal panel displays an image by selectively transmitting light. The first liquid crystal panel and the second liquid crystal panel operate in different modes.
表示装置のコントラスト比は高いことが好ましい。例えば、バックライトの光量を増やすことで、表示装置の最大輝度を高めることができる。一方で、バックライトの光量を増やし過ぎると、黒色が正しく表示されず、白色または灰色を帯びることがある（黒浮きともいう）。
The contrast ratio of the display device is preferably high. For example, the maximum luminance of the display device can be increased by increasing the light amount of the backlight. On the other hand, if the amount of light of the backlight is increased too much, black may not be displayed correctly and may be white or gray (also referred to as black float).
本実施の形態の表示装置では、バックライトの光が２つの液晶パネルを透過することで画像を表示する。そのため、バックライトの光量が多くても黒浮きが生じにくい。したがって、低い最小輝度と高い最大輝度を両立でき、コントラスト比を高めることができる。
In the display device of the present embodiment, the image of the backlight is displayed through the two liquid crystal panels. For this reason, even if the amount of light from the backlight is large, black floating is unlikely to occur. Therefore, both a low minimum luminance and a high maximum luminance can be achieved, and the contrast ratio can be increased.
例えば、本実施の形態の表示装置のコントラスト比は、１００００：１以上、１０００００：１以上、または１００００００：１以上とすることができる。
For example, the contrast ratio of the display device of this embodiment can be 10,000: 1 or more, 100,000: 1 or more, or 1000000: 1 or more.
また、本実施の形態の表示装置では、２つの液晶パネルが、異なるモードで動作する。そのため、２つの液晶パネルそれぞれに適したモードを選択することができる。これにより、高品質の表示装置を得ることができる。
In the display device of this embodiment, the two liquid crystal panels operate in different modes. Therefore, a mode suitable for each of the two liquid crystal panels can be selected. Thereby, a high-quality display device can be obtained.
第１の液晶パネルは、主に調光を行うパネルであるため、透過率の高いモードで動作することが好ましい。第２の液晶パネルは、主に画像を表示するパネルであるため、視野角特性の高いモードで動作することが好ましい。これにより、コントラスト比が高く、視野角の広い表示装置を実現できる。また、視野角特性の観点から、第２の液晶パネルは、第１の液晶パネルよりも表示面側に位置することが好ましい。
Since the first liquid crystal panel is a panel that mainly performs light control, it is preferable to operate in a mode with high transmittance. Since the second liquid crystal panel is a panel that mainly displays an image, it is preferable to operate in a mode with high viewing angle characteristics. Thereby, a display device having a high contrast ratio and a wide viewing angle can be realized. In view of viewing angle characteristics, the second liquid crystal panel is preferably positioned closer to the display surface than the first liquid crystal panel.
具体的には、第１の液晶パネルには、ＴＮモードを用いることが好ましい。ＴＮモードは、横電界モード（ＩＰＳモード、ＦＦＳモードなど）及び複屈折モード（ＶＡモードなど）よりも透過率が高く、調光用の第１の液晶パネルに好適である。さらに、ＴＮモードは、駆動電圧が低い、コストが低い等のメリットを有する点でも好ましい。
Specifically, it is preferable to use a TN mode for the first liquid crystal panel. The TN mode has higher transmittance than the transverse electric field mode (IPS mode, FFS mode, etc.) and the birefringence mode (VA mode, etc.), and is suitable for the first liquid crystal panel for light control. Furthermore, the TN mode is preferable in that it has merits such as low driving voltage and low cost.
第１の液晶パネルがＴＮモードで動作する場合、第１の液晶パネルの上下に位置する偏光板の配置は、パラレルニコルであることが好ましい。つまり、２枚の偏光板の偏光軸（透過軸ともいう）は互いに平行であることが好ましい。これにより、第１の液晶パネルは、ノーマリーブラック（電圧ＯＦＦ時に黒表示）となる。ＴＮモードにおける黒表示は、ノーマリーブラックに比べて、ノーマリーホワイト（電圧ＯＦＦ時に白表示）の方が良好となることがある。しかし、本実施の形態の表示装置は、２つの液晶パネルを積層して有することから黒浮きが生じにくい構成である。そのため、ノーマリーブラックを採用しても、良好に黒色を表示することができる。また、ＴＮモードにおける白表示は、ノーマリーホワイトに比べて、ノーマリーブラックの方が良好となる場合がある。
When the first liquid crystal panel operates in the TN mode, the arrangement of the polarizing plates positioned above and below the first liquid crystal panel is preferably parallel Nicols. That is, the polarization axes (also referred to as transmission axes) of the two polarizing plates are preferably parallel to each other. As a result, the first liquid crystal panel is normally black (displays black when the voltage is OFF). In black display in the TN mode, normally white (white display when the voltage is OFF) may be better than normally black. However, the display device of this embodiment has a structure in which black floating is unlikely to occur because two liquid crystal panels are stacked. Therefore, even when normally black is adopted, black can be displayed well. Further, normally black in TN mode may be better with normally black than with normally white.
本実施の形態の表示装置は、調光パネルとして機能する第１の液晶パネルを有するため、バックライトだけでなく、調光パネルも用いて、表示パネル（第２の液晶パネル）に入射する光の輝度を調整することができる。これにより、表示装置のコントラスト比を高めることができる。
Since the display device of this embodiment includes the first liquid crystal panel that functions as a light control panel, light that enters the display panel (second liquid crystal panel) using not only the backlight but also the light control panel. The brightness can be adjusted. Thereby, the contrast ratio of the display device can be increased.
一方、第２の液晶パネルには、ＩＰＳモードまたはＦＦＳモードを用いることが好ましい。ＩＰＳモード及びＦＦＳモードは、視野角による輝度変化及び色変化が少ないため、表示用の第２の液晶パネルに好適である。ＦＦＳモードを用いると、画素電極と共通電極との間で容量を形成することができるため、開口率を高めることができ、好ましい。
On the other hand, the IPS mode or the FFS mode is preferably used for the second liquid crystal panel. The IPS mode and the FFS mode are suitable for the second liquid crystal panel for display because the luminance change and the color change due to the viewing angle are small. The use of the FFS mode is preferable because a capacitance can be formed between the pixel electrode and the common electrode, so that the aperture ratio can be increased.
また、第２の液晶パネルとしては、実施の形態２で説明する本発明の一態様の液晶パネルを適用することが好ましい。当該液晶パネルは、電圧変化が生じても階調ズレが生じにくい特徴を有する。そのため、表示装置の色深度を８ビットより大きくしても（例えば１２ビットとしても）、高い表示品位を実現することができる。
As the second liquid crystal panel, the liquid crystal panel of one embodiment of the present invention described in Embodiment 2 is preferably used. The liquid crystal panel has a characteristic that gradation shift hardly occurs even when a voltage change occurs. Therefore, even if the color depth of the display device is larger than 8 bits (for example, 12 bits), high display quality can be realized.
以下では、表示装置の構成例について、図面を用いて説明する。
Below, the structural example of a display apparatus is demonstrated using drawing.
＜構成例１＞
図１（Ａ）に表示装置１００Ａの断面図を示す。 <Configuration example 1>
A cross-sectional view of thedisplay device 100A is shown in FIG.
図１（Ａ）に表示装置１００Ａの断面図を示す。 <Configuration example 1>
A cross-sectional view of the
表示装置１００Ａは、液晶パネル１０Ａ、液晶パネル２０Ａ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100A includes a liquid crystal panel 10A, a liquid crystal panel 20A, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
バックライトユニット３０が有する光源から発せられた光３５は、偏光板６１、液晶パネル２０Ａ、偏光板６２、液晶パネル１０Ａ、偏光板６３をこの順に透過して、表示装置１００Ａの外部に射出される。光３５が透過するこれらの層の材料には、可視光を透過する材料を用いる。
The light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 20A, the polarizing plate 62, the liquid crystal panel 10A, and the polarizing plate 63 in this order, and is emitted to the outside of the display device 100A. . A material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
液晶パネル１０Ａは、ＦＦＳモードが適用されたアクティブマトリクス型の液晶パネルである。液晶パネル１０Ａは、透過型の液晶パネルである。液晶パネル１０Ａは、表示パネルとして機能する。
The liquid crystal panel 10A is an active matrix liquid crystal panel to which the FFS mode is applied. The liquid crystal panel 10A is a transmissive liquid crystal panel. The liquid crystal panel 10A functions as a display panel.
液晶パネル１０Ａは、基板１１、基板１２、トランジスタ１３、絶縁層１４、液晶素子４０等を有する。
The liquid crystal panel 10A includes a substrate 11, a substrate 12, a transistor 13, an insulating layer 14, a liquid crystal element 40, and the like.
液晶素子４０は、電極４１、液晶層４２、及び電極４３を有する。電極４１は、画素電極として機能し、電極４３は、共通電極として機能する。電極４１は絶縁層１４上に設けられる。絶縁層１４に設けられた開口を介して、電極４１とトランジスタ１３とは電気的に接続される。電極４１は絶縁層４４に覆われており、絶縁層４４上に電極４３が設けられている。電極４１は、絶縁層４４を介して電極４３と重なる領域を有する。また、電極４１は、電極４３と重ならない領域も有する。液晶層４２は、基板１１と基板１２の間に挟持される。
The liquid crystal element 40 includes an electrode 41, a liquid crystal layer 42, and an electrode 43. The electrode 41 functions as a pixel electrode, and the electrode 43 functions as a common electrode. The electrode 41 is provided on the insulating layer 14. The electrode 41 and the transistor 13 are electrically connected through an opening provided in the insulating layer 14. The electrode 41 is covered with an insulating layer 44, and the electrode 43 is provided on the insulating layer 44. The electrode 41 has a region overlapping with the electrode 43 with the insulating layer 44 interposed therebetween. The electrode 41 also has a region that does not overlap with the electrode 43. The liquid crystal layer 42 is sandwiched between the substrate 11 and the substrate 12.
液晶パネル２０Ａは、ＴＮモードが適用されたパッシブマトリクス型の液晶パネルである。液晶パネル２０Ａは、透過型の液晶パネルである。液晶パネル２０Ａは、調光パネルとして機能する。調光パネルは、パッシブマトリクス型であってもアクティブマトリクス型であってもよい。
The liquid crystal panel 20A is a passive matrix liquid crystal panel to which the TN mode is applied. The liquid crystal panel 20A is a transmissive liquid crystal panel. The liquid crystal panel 20A functions as a light control panel. The light control panel may be a passive matrix type or an active matrix type.
液晶パネル２０Ａは、基板２１、基板２２、液晶素子５０等を有する。
The liquid crystal panel 20A includes a substrate 21, a substrate 22, a liquid crystal element 50, and the like.
液晶素子５０は、電極５１、液晶層５２、及び電極５３を有する。電極５１は、画素電極として機能し、電極５３は、共通電極として機能する。電極５１は基板２１側に設けられる。電極５３は基板２２側に設けられる。液晶層５２は、電極５１と電極５３の間に挟持される。基板２１上には、電極５１と同一の工程及び同一の材料を用いて形成された導電層２５が設けられている。導電層２５は、接続体２９を介して、電極５３と電気的に接続されている。
The liquid crystal element 50 includes an electrode 51, a liquid crystal layer 52, and an electrode 53. The electrode 51 functions as a pixel electrode, and the electrode 53 functions as a common electrode. The electrode 51 is provided on the substrate 21 side. The electrode 53 is provided on the substrate 22 side. The liquid crystal layer 52 is sandwiched between the electrode 51 and the electrode 53. A conductive layer 25 formed using the same process and the same material as the electrode 51 is provided on the substrate 21. The conductive layer 25 is electrically connected to the electrode 53 through the connection body 29.
調光パネルと表示パネルが同じ解像度及び精細度である場合、調光パネルを用いて、表示パネルに入射する光の量を、表示パネルの副画素単位で制御することができ、好ましい。または、表示パネルと調光パネルは、互いに異なる解像度及び精細度とすることができる。表示パネルの解像度が極めて高い場合、調光パネルの解像度を表示パネルの解像度と同等にすると、表示装置のコストが高くなることがある。そのため、調光パネルの解像度は、表示パネルの解像度よりも低くてもよい。つまり、表示パネルの解像度は、調光パネルの解像度以上であることが好ましい。
When the light control panel and the display panel have the same resolution and definition, it is preferable that the light control panel can be used to control the amount of light incident on the display panel in units of sub-pixels of the display panel. Alternatively, the display panel and the light control panel can have different resolution and definition. When the resolution of the display panel is extremely high, the cost of the display device may increase if the resolution of the light control panel is made equal to the resolution of the display panel. Therefore, the resolution of the light control panel may be lower than the resolution of the display panel. That is, the resolution of the display panel is preferably equal to or higher than the resolution of the light control panel.
バックライトユニット３０には、直下型のバックライト、エッジライト型のバックライト等を用いることができる。光源には、ＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ）、有機ＥＬ（Ｅｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｃｅ）素子等を用いることができる。
The backlight unit 30 may be a direct type backlight, an edge light type backlight, or the like. As the light source, an LED (Light Emitting Diode), an organic EL (Electroluminescence) element, or the like can be used.
偏光板６１と偏光板６２は、第１の方向の偏光軸を有することが好ましい。偏光板６３は、第１の方向と交差する第２の方向の偏光軸を有することが好ましい。つまり、偏光板６１と偏光板６２の配置はパラレルニコルであり、ＴＮモードで動作する液晶パネル２０Ａは、ノーマリーブラックである。また、偏光板６２と偏光板６３の配置はクロスニコルであり、ＦＦＳモードで動作する液晶パネル１０Ａは、ノーマリーブラックである。
The polarizing plate 61 and the polarizing plate 62 preferably have a polarization axis in the first direction. The polarizing plate 63 preferably has a polarization axis in a second direction that intersects the first direction. That is, the arrangement of the polarizing plate 61 and the polarizing plate 62 is parallel Nicol, and the liquid crystal panel 20A operating in the TN mode is normally black. Further, the arrangement of the polarizing plate 62 and the polarizing plate 63 is crossed Nicol, and the liquid crystal panel 10A operating in the FFS mode is normally black.
なお、本実施の形態の表示装置に用いることができる各種材料については、構成例７にて詳述する。
Note that various materials that can be used for the display device of this embodiment are described in Structure Example 7.
＜構成例２＞
図１（Ｂ）に表示装置１００Ｂの断面図を示す。表示装置１００Ｂは、表示パネルとして機能する液晶パネルがＩＰＳモードで動作する点で、表示装置１００Ａと異なる。以降の構成例では、先の構成例と同様の構成については説明を省略する。 <Configuration example 2>
A cross-sectional view of thedisplay device 100B is shown in FIG. The display device 100B is different from the display device 100A in that a liquid crystal panel that functions as a display panel operates in the IPS mode. In the subsequent configuration examples, description of the same configuration as the previous configuration example is omitted.
図１（Ｂ）に表示装置１００Ｂの断面図を示す。表示装置１００Ｂは、表示パネルとして機能する液晶パネルがＩＰＳモードで動作する点で、表示装置１００Ａと異なる。以降の構成例では、先の構成例と同様の構成については説明を省略する。 <Configuration example 2>
A cross-sectional view of the
表示装置１００Ｂは、液晶パネル１０Ｂ、液晶パネル２０Ｂ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100B includes a liquid crystal panel 10B, a liquid crystal panel 20B, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
バックライトユニット３０が有する光源から発せられた光３５は、偏光板６１、液晶パネル２０Ｂ、偏光板６２、液晶パネル１０Ｂ、偏光板６３をこの順に透過して、表示装置１００Ｂの外部に射出される。光３５が透過するこれらの層の材料には、可視光を透過する材料を用いる。
The light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 20B, the polarizing plate 62, the liquid crystal panel 10B, and the polarizing plate 63 in this order, and is emitted to the outside of the display device 100B. . A material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
液晶パネル１０Ｂは、ＩＰＳモードが適用されたアクティブマトリクス型の液晶パネルである。液晶パネル１０Ｂは、透過型の液晶パネルである。液晶パネル１０Ｂは、表示パネルとして機能する。
The liquid crystal panel 10B is an active matrix liquid crystal panel to which the IPS mode is applied. The liquid crystal panel 10B is a transmissive liquid crystal panel. The liquid crystal panel 10B functions as a display panel.
液晶パネル１０Ｂは、基板１１、基板１２、トランジスタ１３、絶縁層１４、液晶素子４５等を有する。
The liquid crystal panel 10B includes a substrate 11, a substrate 12, a transistor 13, an insulating layer 14, a liquid crystal element 45, and the like.
液晶素子４５は、電極４６、液晶層４７、及び電極４８を有する。電極４６及び電極４８は絶縁層１４上に設けられる。電極４６と電極４８は、同一の工程及び同一の材料を用いて形成することができる。絶縁層１４に設けられた開口を介して、電極４６とトランジスタ１３とは電気的に接続される。液晶層４７は、基板１１と基板１２の間に挟持される。
The liquid crystal element 45 includes an electrode 46, a liquid crystal layer 47, and an electrode 48. The electrode 46 and the electrode 48 are provided on the insulating layer 14. The electrode 46 and the electrode 48 can be formed using the same process and the same material. The electrode 46 and the transistor 13 are electrically connected through an opening provided in the insulating layer 14. The liquid crystal layer 47 is sandwiched between the substrate 11 and the substrate 12.
液晶パネル２０Ｂは、液晶パネル２０Ａと同様の構成であるため、詳細な説明は省略する。
Since the liquid crystal panel 20B has the same configuration as the liquid crystal panel 20A, detailed description thereof is omitted.
偏光板６１と偏光板６２は、第１の方向の偏光軸を有することが好ましい。偏光板６３は、第１の方向と交差する第２の方向の偏光軸を有することが好ましい。つまり、偏光板６１と偏光板６２の配置はパラレルニコルであり、ＴＮモードで動作する液晶パネル２０Ｂは、ノーマリーブラックである。また、偏光板６２と偏光板６３の配置はクロスニコルであり、ＩＰＳモードで動作する液晶パネル１０Ｂは、ノーマリーブラックである。
The polarizing plate 61 and the polarizing plate 62 preferably have a polarization axis in the first direction. The polarizing plate 63 preferably has a polarization axis in a second direction that intersects the first direction. That is, the arrangement of the polarizing plate 61 and the polarizing plate 62 is parallel Nicol, and the liquid crystal panel 20B operating in the TN mode is normally black. The arrangement of the polarizing plate 62 and the polarizing plate 63 is crossed Nicol, and the liquid crystal panel 10B operating in the IPS mode is normally black.
＜構成例３＞
図２（Ａ）に表示装置１００Ｃの断面図を示し、図２（Ｂ）に表示装置１００Ｄの断面図を示す。表示装置１００Ｃは、調光パネルとして機能する液晶パネルがアクティブマトリクス型である点で、表示装置１００Ａと異なる。同様に、表示装置１００Ｄは、調光パネルとして機能する液晶パネルがアクティブマトリクス型である点で、表示装置１００Ｂと異なる。 <Configuration example 3>
2A shows a cross-sectional view of thedisplay device 100C, and FIG. 2B shows a cross-sectional view of the display device 100D. The display device 100C is different from the display device 100A in that a liquid crystal panel that functions as a light control panel is an active matrix type. Similarly, the display device 100D is different from the display device 100B in that the liquid crystal panel that functions as a light control panel is an active matrix type.
図２（Ａ）に表示装置１００Ｃの断面図を示し、図２（Ｂ）に表示装置１００Ｄの断面図を示す。表示装置１００Ｃは、調光パネルとして機能する液晶パネルがアクティブマトリクス型である点で、表示装置１００Ａと異なる。同様に、表示装置１００Ｄは、調光パネルとして機能する液晶パネルがアクティブマトリクス型である点で、表示装置１００Ｂと異なる。 <Configuration example 3>
2A shows a cross-sectional view of the
表示装置１００Ｃは、液晶パネル１０Ｃ、液晶パネル２０Ｃ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100C includes a liquid crystal panel 10C, a liquid crystal panel 20C, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
液晶パネル１０Ｃは、液晶パネル１０Ａと同様の構成であるため、詳細な説明は省略する。
Since the liquid crystal panel 10C has the same configuration as the liquid crystal panel 10A, detailed description thereof is omitted.
液晶パネル２０Ｃは、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルである。液晶パネル２０Ｃは、透過型の液晶パネルである。液晶パネル２０Ｃは、調光パネルとして機能する。
The liquid crystal panel 20C is an active matrix type liquid crystal panel to which the TN mode is applied. The liquid crystal panel 20C is a transmissive liquid crystal panel. The liquid crystal panel 20C functions as a light control panel.
液晶パネル２０Ｃは、基板２１、基板２２、トランジスタ２３、絶縁層２４、液晶素子５０等を有する。
The liquid crystal panel 20C includes a substrate 21, a substrate 22, a transistor 23, an insulating layer 24, a liquid crystal element 50, and the like.
液晶素子５０は、電極５１、液晶層５２、及び電極５３を有する。電極５１は絶縁層２４上に設けられる。絶縁層２４に設けられた開口を介して、電極５１とトランジスタ２３とは電気的に接続される。電極５３は基板２２側に設けられる。液晶層５２は、電極５１と電極５３の間に挟持される。基板２１上には、電極５１と同一の工程及び同一の材料を用いて形成された導電層２５が設けられている。導電層２５は、接続体２９を介して、電極５３と電気的に接続されている。
The liquid crystal element 50 includes an electrode 51, a liquid crystal layer 52, and an electrode 53. The electrode 51 is provided on the insulating layer 24. The electrode 51 and the transistor 23 are electrically connected through an opening provided in the insulating layer 24. The electrode 53 is provided on the substrate 22 side. The liquid crystal layer 52 is sandwiched between the electrode 51 and the electrode 53. A conductive layer 25 formed using the same process and the same material as the electrode 51 is provided on the substrate 21. The conductive layer 25 is electrically connected to the electrode 53 through the connection body 29.
表示パネルと調光パネルの双方がアクティブマトリクス型である場合、トランジスタの構造及び材料等は、同一の構成としてもよく、異なる構成としてもよい。
In the case where both the display panel and the light control panel are active matrix types, the structure and materials of the transistors may be the same or different.
表示装置１００Ｄは、液晶パネル１０Ｄ、液晶パネル２０Ｄ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100D includes a liquid crystal panel 10D, a liquid crystal panel 20D, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
液晶パネル１０Ｄは、液晶パネル１０Ｂと同様の構成であるため、詳細な説明は省略する。
Since the liquid crystal panel 10D has the same configuration as the liquid crystal panel 10B, detailed description thereof is omitted.
液晶パネル２０Ｄは、液晶パネル２０Ｃと同様の構成であるため、詳細な説明は省略する。
Since the liquid crystal panel 20D has the same configuration as the liquid crystal panel 20C, detailed description thereof is omitted.
＜構成例４＞
構成例１~３では図示しなかったが、本実施の形態の表示装置において、２つの液晶パネルのうち一方または双方に、着色層（カラーフィルタなど）が設けられる。副画素によって着色層の色を変えることで、様々な色を呈することができる。よって、本実施の形態の表示装置は、カラー画像を表示することができる。バックライトユニット３０が有する光源から発せられた光３５は、着色層によって特定の波長領域以外の光が吸収される。これにより、例えば、赤色の副画素から表示装置の外部に射出される光は赤色を呈し、緑色の副画素から表示装置の外部に射出される光は緑色を呈し、青色の副画素から表示装置の外部に射出される光は青色を呈する。本構成例では、着色層の配置例について説明する。 <Configuration example 4>
Although not shown in Structural Examples 1 to 3, in the display device of this embodiment, one or both of the two liquid crystal panels are provided with a colored layer (such as a color filter). Various colors can be presented by changing the color of the colored layer depending on the sub-pixel. Therefore, the display device of this embodiment can display a color image. The light 35 emitted from the light source included in thebacklight unit 30 is absorbed by the colored layer in light other than the specific wavelength region. Thus, for example, light emitted from the red sub-pixel to the outside of the display device exhibits red, light emitted from the green sub-pixel to the outside of the display device exhibits green, and the light is emitted from the blue sub-pixel to the display device. The light emitted to the outside exhibits blue. In this configuration example, an arrangement example of the colored layer will be described.
構成例１~３では図示しなかったが、本実施の形態の表示装置において、２つの液晶パネルのうち一方または双方に、着色層（カラーフィルタなど）が設けられる。副画素によって着色層の色を変えることで、様々な色を呈することができる。よって、本実施の形態の表示装置は、カラー画像を表示することができる。バックライトユニット３０が有する光源から発せられた光３５は、着色層によって特定の波長領域以外の光が吸収される。これにより、例えば、赤色の副画素から表示装置の外部に射出される光は赤色を呈し、緑色の副画素から表示装置の外部に射出される光は緑色を呈し、青色の副画素から表示装置の外部に射出される光は青色を呈する。本構成例では、着色層の配置例について説明する。 <Configuration example 4>
Although not shown in Structural Examples 1 to 3, in the display device of this embodiment, one or both of the two liquid crystal panels are provided with a colored layer (such as a color filter). Various colors can be presented by changing the color of the colored layer depending on the sub-pixel. Therefore, the display device of this embodiment can display a color image. The light 35 emitted from the light source included in the
図３（Ａ）に表示装置１００Ｅの断面図を示す。
FIG. 3A is a cross-sectional view of the display device 100E.
表示装置１００Ｅは、液晶パネル１０Ｅ、液晶パネル２０Ｅ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100E includes a liquid crystal panel 10E, a liquid crystal panel 20E, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
液晶パネル１０Ｅは、液晶パネル１０Ｃの構成に加えて、遮光層３８及び着色層３９を有する。具体的には、基板１２側に遮光層３８及び着色層３９が設けられている。液晶パネル１０Ｅに入射された光のうち、特定の波長領域の光のみが着色層３９を透過し、表示装置１００Ｅの外部に射出される。着色層３９を表示面に近い位置に設けることで、混色を抑制し、表示装置の表示品位を高めることができる。
The liquid crystal panel 10E includes a light shielding layer 38 and a colored layer 39 in addition to the configuration of the liquid crystal panel 10C. Specifically, a light shielding layer 38 and a colored layer 39 are provided on the substrate 12 side. Of the light incident on the liquid crystal panel 10E, only light in a specific wavelength region passes through the colored layer 39 and is emitted to the outside of the display device 100E. By providing the colored layer 39 at a position close to the display surface, color mixing can be suppressed and display quality of the display device can be improved.
液晶パネル２０Ｅは、液晶パネル２０Ｃと同様の構成であるため、詳細な説明は省略する。
Since the liquid crystal panel 20E has the same configuration as the liquid crystal panel 20C, detailed description thereof is omitted.
図３（Ｂ）に表示装置１００Ｆの断面図を示す。
FIG. 3B is a cross-sectional view of the display device 100F.
表示装置１００Ｆは、液晶パネル１０Ｆ、液晶パネル２０Ｆ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100F includes a liquid crystal panel 10F, a liquid crystal panel 20F, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
液晶パネル１０Ｆは、液晶パネル１０Ｄの構成に加えて、遮光層３８を有する。具体的には、基板１２側に遮光層３８が設けられている。
The liquid crystal panel 10F includes a light shielding layer 38 in addition to the configuration of the liquid crystal panel 10D. Specifically, a light shielding layer 38 is provided on the substrate 12 side.
液晶パネル２０Ｆは、液晶パネル２０Ｄの上下を反転した構成であり、液晶パネル１０Ｆ側に基板２１が位置し、バックライトユニット３０側に基板２２が位置する。さらに、液晶パネル２０Ｆは、絶縁層２７及び着色層３９を有する。基板２２上に着色層３９が設けられており、着色層３９上に絶縁層２７が設けられており、絶縁層２７上に電極５３が設けられている。
The liquid crystal panel 20F has a configuration in which the liquid crystal panel 20D is turned upside down. The substrate 21 is positioned on the liquid crystal panel 10F side, and the substrate 22 is positioned on the backlight unit 30 side. Further, the liquid crystal panel 20 </ b> F includes an insulating layer 27 and a colored layer 39. A colored layer 39 is provided on the substrate 22, an insulating layer 27 is provided on the colored layer 39, and an electrode 53 is provided on the insulating layer 27.
バックライトユニット３０が有する光源から発せられた光３５は、偏光板６１を介して、液晶パネル２０Ｆに入射される。光３５は、液晶パネル２０Ｆ内を、基板２２、着色層３９、絶縁層２７、液晶素子５０、絶縁層２４、基板２１の順に透過する。光３５のうち、特定の波長領域の光以外は着色層３９によって吸収される。そして、特定の波長領域の光のみが、液晶素子５０、絶縁層２４、基板２１、さらには偏光板６２、液晶パネル１０Ｆ、及び偏光板６３に入射され、表示装置１００Ｆの外部に射出される。
The light 35 emitted from the light source of the backlight unit 30 is incident on the liquid crystal panel 20F via the polarizing plate 61. The light 35 passes through the liquid crystal panel 20F in the order of the substrate 22, the colored layer 39, the insulating layer 27, the liquid crystal element 50, the insulating layer 24, and the substrate 21. Of the light 35, light other than a specific wavelength region is absorbed by the colored layer 39. Then, only light in a specific wavelength region is incident on the liquid crystal element 50, the insulating layer 24, the substrate 21, the polarizing plate 62, the liquid crystal panel 10F, and the polarizing plate 63, and is emitted outside the display device 100F.
つまり、表示装置１００Ｆでは、表示装置１００Ｅに比べて、２つの液晶パネルが有する液晶層に入射される光の量を減らすことができる。
That is, in the display device 100F, the amount of light incident on the liquid crystal layers of the two liquid crystal panels can be reduced as compared with the display device 100E.
表示装置の最大輝度を高めるためにバックライトの光量を増やすと、液晶層に強い光が入射されることになる。よって、液晶素子を安定に動作させるために、耐光性の高い液晶材料が求められる。着色層３９を、２つの液晶素子よりも、バックライトユニット３０側に設けることで、２つの液晶素子に、特定の波長領域の光のみが入射する。これにより、液晶層に入射される光を弱くすることができるため、液晶素子の信頼性の低下を抑制でき、液晶素子を安定に動作させることができる。
When the amount of light from the backlight is increased to increase the maximum luminance of the display device, strong light is incident on the liquid crystal layer. Therefore, a liquid crystal material with high light resistance is required to stably operate the liquid crystal element. By providing the colored layer 39 closer to the backlight unit 30 than the two liquid crystal elements, only light in a specific wavelength region enters the two liquid crystal elements. Thereby, since the light incident on the liquid crystal layer can be weakened, a decrease in the reliability of the liquid crystal element can be suppressed, and the liquid crystal element can be stably operated.
＜構成例５＞
図４（Ａ）に表示装置１００Ｇの断面図を示し、図４（Ｂ）に表示装置１００Ｈの断面図を示す。 <Configuration example 5>
4A is a cross-sectional view of thedisplay device 100G, and FIG. 4B is a cross-sectional view of the display device 100H.
図４（Ａ）に表示装置１００Ｇの断面図を示し、図４（Ｂ）に表示装置１００Ｈの断面図を示す。 <Configuration example 5>
4A is a cross-sectional view of the
表示装置１００Ｇは、液晶パネル１０Ｇ、液晶パネル２０Ｇ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100G includes a liquid crystal panel 10G, a liquid crystal panel 20G, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
液晶パネル１０Ｇは、基板１１を有さず、可撓性基板１６を有する点で、液晶パネル１０Ｅと異なる。液晶パネル２０Ｇは、基板２２を有さず、可撓性基板２６を有する点で、液晶パネル２０Ｅと異なる。
The liquid crystal panel 10G is different from the liquid crystal panel 10E in that it does not have the substrate 11 but has the flexible substrate 16. The liquid crystal panel 20G is different from the liquid crystal panel 20E in that it does not have the substrate 22 but has a flexible substrate 26.
表示装置１００Ｈは、液晶パネル１０Ｈ、液晶パネル２０Ｈ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
The display device 100H includes a liquid crystal panel 10H, a liquid crystal panel 20H, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
液晶パネル１０Ｈは、液晶パネル１０Ｆの上下を反転した構成であり、かつ、基板１２を有さず、可撓性基板１６を有する。可撓性基板１６上には、遮光層３８及び着色層３９が設けられている。液晶パネル２０Ｈは、液晶パネル２０Ｇと同様の構成である。
The liquid crystal panel 10 </ b> H has a configuration in which the liquid crystal panel 10 </ b> F is turned upside down, and does not have the substrate 12 but has the flexible substrate 16. On the flexible substrate 16, a light shielding layer 38 and a colored layer 39 are provided. The liquid crystal panel 20H has the same configuration as the liquid crystal panel 20G.
可撓性基板１６及び可撓性基板２６には、それぞれ、可撓性を有する材料を用いることができ、樹脂フィルムを用いることが好ましい。本構成例は、可撓性基板１６及び可撓性基板２６を用いるため、ガラス基板等の硬質基板を用いる場合に比べて、表示装置の薄型化及び軽量化が可能となる。さらに、２つの液晶パネルが有する液晶素子間の距離を短くできるため、視差が生じることを抑制し、表示装置の視野角を広くすることができる。これは、液晶パネル１０Ｈと液晶パネル２０Ｈの画素数が近いまたは同じであるときに特に有効である。
A flexible material can be used for each of the flexible substrate 16 and the flexible substrate 26, and a resin film is preferably used. In this configuration example, since the flexible substrate 16 and the flexible substrate 26 are used, the display device can be made thinner and lighter than when a hard substrate such as a glass substrate is used. Furthermore, since the distance between the liquid crystal elements included in the two liquid crystal panels can be shortened, the occurrence of parallax can be suppressed and the viewing angle of the display device can be widened. This is particularly effective when the number of pixels of the liquid crystal panel 10H and the liquid crystal panel 20H is close or the same.
また、表示装置１００Ｈにおいて、バックライトユニット３０が有する光源から発せられた光３５は、偏光板６１、液晶パネル２０Ｈ、及び偏光板６２を介して液晶パネル１０Ｈに入射される。光３５は、液晶パネル１０Ｈ内を、可撓性基板１６、着色層３９、液晶素子４５、絶縁層１４、基板１１の順に透過する。光３５のうち、特定の波長領域の光以外は着色層３９によって吸収される。そして、特定の波長領域の光のみが、液晶素子４５、絶縁層１４、基板１１、さらには偏光板６３に入射され、表示装置１００Ｈの外部に射出される。
In the display device 100H, the light 35 emitted from the light source of the backlight unit 30 is incident on the liquid crystal panel 10H via the polarizing plate 61, the liquid crystal panel 20H, and the polarizing plate 62. The light 35 passes through the liquid crystal panel 10H in the order of the flexible substrate 16, the colored layer 39, the liquid crystal element 45, the insulating layer 14, and the substrate 11. Of the light 35, light other than a specific wavelength region is absorbed by the colored layer 39. Then, only light in a specific wavelength region enters the liquid crystal element 45, the insulating layer 14, the substrate 11, and further the polarizing plate 63, and is emitted outside the display device 100H.
つまり、液晶パネル１０Ｈの液晶層４７は、液晶パネル１０Ｇの液晶層４２に比べて、弱い光が入射される。したがって、表示パネルが有する液晶素子の信頼性の低下を抑制でき、液晶素子を安定に動作させることができる。
That is, weak light is incident on the liquid crystal layer 47 of the liquid crystal panel 10H compared to the liquid crystal layer 42 of the liquid crystal panel 10G. Therefore, a decrease in reliability of the liquid crystal element included in the display panel can be suppressed, and the liquid crystal element can be stably operated.
また、耐熱性などの観点から、可撓性基板上に、液晶素子の電極やトランジスタを直接形成することは困難な場合がある。そこで、硬質基板上に液晶素子の電極やトランジスタを形成し、基板１２または基板２１と貼り合わせた後、硬質基板を剥離し、可撓性基板に転置する方法を用いることができる。本構成例において、可撓性基板１６及び可撓性基板２６は、それぞれ、接着剤等によって、基板１２または基板２１と貼り合わされていてもよい。
In addition, from the viewpoint of heat resistance and the like, it may be difficult to directly form electrodes and transistors of liquid crystal elements on a flexible substrate. Therefore, a method in which an electrode or a transistor of a liquid crystal element is formed over a hard substrate and bonded to the substrate 12 or the substrate 21, and then the hard substrate is peeled off and transferred to a flexible substrate can be used. In this configuration example, the flexible substrate 16 and the flexible substrate 26 may be bonded to the substrate 12 or the substrate 21 with an adhesive or the like, respectively.
なお、トランジスタを形成した硬質基板は、液晶素子の電極のみを形成した硬質基板に比べて、剥離性が低い場合がある。そのため、後に剥離する硬質基板上には、液晶素子の電極、着色層、及び遮光層のうち一つまたは複数を作製し、剥離しない基板（基板１２または基板２１）にトランジスタを形成することが好ましい。例えば、表示装置１００Ｈにおいて、トランジスタ１３は基板１１に形成され、トランジスタ２３は基板２１に形成されており、可撓性基板側には、電極５３、着色層３９、及び遮光層３８などが位置する。そのため、硬質基板に電極５３などを作製し、基板２１と貼り合わせた後、硬質基板を歩留まり良く剥離し、可撓性基板２６に転置することができる。また、硬質基板に着色層３９及び遮光層３８などを作製し、基板１１と貼り合わせた後、硬質基板を歩留まり良く剥離し、可撓性基板１６に転置することができる。
Note that a hard substrate over which a transistor is formed may have lower peelability than a hard substrate over which only an electrode of a liquid crystal element is formed. Therefore, it is preferable to form one or a plurality of electrodes, colored layers, and light-shielding layers of a liquid crystal element over a hard substrate that is peeled later, and a transistor is formed on a substrate (the substrate 12 or the substrate 21) that is not peeled off. . For example, in the display device 100H, the transistor 13 is formed on the substrate 11, the transistor 23 is formed on the substrate 21, and the electrode 53, the coloring layer 39, the light shielding layer 38, and the like are located on the flexible substrate side. . Therefore, after the electrodes 53 and the like are formed on the hard substrate and bonded to the substrate 21, the hard substrate can be peeled off with a high yield and transferred to the flexible substrate 26. Further, after the colored layer 39 and the light shielding layer 38 are formed on the hard substrate and bonded to the substrate 11, the hard substrate can be peeled off with a high yield and transferred to the flexible substrate 16.
＜構成例６＞
本発明の一態様は、タッチセンサが搭載された表示装置（入出力装置またはタッチパネルともいう）に適用することができる。上述の各表示装置の構成を、タッチパネルに適用することができる。 <Configuration Example 6>
One embodiment of the present invention can be applied to a display device (also referred to as an input / output device or a touch panel) on which a touch sensor is mounted. The configuration of each display device described above can be applied to a touch panel.
本発明の一態様は、タッチセンサが搭載された表示装置（入出力装置またはタッチパネルともいう）に適用することができる。上述の各表示装置の構成を、タッチパネルに適用することができる。 <Configuration Example 6>
One embodiment of the present invention can be applied to a display device (also referred to as an input / output device or a touch panel) on which a touch sensor is mounted. The configuration of each display device described above can be applied to a touch panel.
本発明の一態様のタッチパネルが有する検知素子（センサ素子ともいう）に限定は無い。指やスタイラスなどの被検知体の近接または接触を検知することのできる様々なセンサを、検知素子として適用することができる。
There is no limitation on a detection element (also referred to as a sensor element) included in the touch panel of one embodiment of the present invention. Various sensors that can detect the proximity or contact of an object to be detected, such as a finger or a stylus, can be applied as the detection element.
センサの方式としては、例えば、静電容量方式、抵抗膜方式、表面弾性波方式、赤外線方式、光学方式、感圧方式など様々な方式を用いることができる。
As a sensor method, for example, various methods such as a capacitance method, a resistance film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used.
本実施の形態では、静電容量方式の検知素子を有するタッチパネルを例に挙げて説明する。
In this embodiment, a touch panel having a capacitive detection element will be described as an example.
静電容量方式としては、表面型静電容量方式、投影型静電容量方式等がある。また、投影型静電容量方式としては、自己容量方式、相互容量方式等がある。相互容量方式を用いると、同時多点検知が可能となるため好ましい。
Examples of the electrostatic capacity method include a surface electrostatic capacity method and a projection electrostatic capacity method. In addition, examples of the projected capacitance method include a self-capacitance method and a mutual capacitance method. The mutual capacitance method is preferable because simultaneous multipoint detection is possible.
本発明の一態様のタッチパネルは、別々に作製された表示パネルと検知素子とを貼り合わせる構成、表示素子を支持する基板及び対向基板の一方または双方に検知素子を構成する電極等を設ける構成等、様々な構成を適用することができる。
The touch panel of one embodiment of the present invention includes a structure in which a separately manufactured display panel and a detection element are bonded together, a structure in which an electrode that forms the detection element is provided on one or both of a substrate that supports the display element and a counter substrate, and the like Various configurations can be applied.
２つの液晶パネルのうち、タッチセンサは、表示面側に位置する液晶パネルに搭載されていることが好ましい。これにより、タッチセンサの感度を高めることができる。本構成例では、表示用の液晶パネルが表示面側に位置し、かつ、タッチセンサを有する場合について説明する。
Of the two liquid crystal panels, the touch sensor is preferably mounted on a liquid crystal panel located on the display surface side. Thereby, the sensitivity of a touch sensor can be raised. In this configuration example, a case where a display liquid crystal panel is located on the display surface side and has a touch sensor will be described.
図５（Ａ）にタッチパネル１１０Ａの断面図を示す。図５（Ｂ）にタッチパネル１１０Ｂの断面図を示す。
FIG. 5A shows a cross-sectional view of the touch panel 110A. FIG. 5B is a cross-sectional view of the touch panel 110B.
図５（Ａ）に示すタッチパネル１１０Ａは、液晶パネル１１１Ａ、液晶パネル１１２Ａ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
A touch panel 110A illustrated in FIG. 5A includes a liquid crystal panel 111A, a liquid crystal panel 112A, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
バックライトユニット３０が有する光源から発せられた光３５は、偏光板６１、液晶パネル１１２Ａ、偏光板６２、液晶パネル１１１Ａ、偏光板６３をこの順に透過して、タッチパネル１１０Ａの外部に射出される。光３５が透過するこれらの層の材料には、可視光を透過する材料を用いる。
The light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 112A, the polarizing plate 62, the liquid crystal panel 111A, and the polarizing plate 63 in this order, and is emitted to the outside of the touch panel 110A. A material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
液晶パネル１１１Ａは、画像を表示する機能と、タッチセンサとしての機能と、を有する。タッチパネル１１０Ａは、液晶パネル１１１Ａのトランジスタ１３等を形成する基板１１のみに、検知素子を構成する電極等を設けた構成である。このような構成は、別々に作製された液晶パネルと検知素子とを貼り合わせる構成に比べて、タッチパネルを薄型化もしくは軽量化することができる、または、タッチパネルの部品点数を少なくすることができる。また、基板１２側に設ける構成要素を簡素化することができる。また、基板１１側に接続された１つまたは複数のＦＰＣによって、液晶素子を駆動する信号と、検知素子を駆動する信号の双方を供給することができる。そのため、電子機器に組み込みやすく、部品点数を削減することができる。
The liquid crystal panel 111A has a function of displaying an image and a function as a touch sensor. The touch panel 110A has a configuration in which an electrode or the like constituting a detection element is provided only on the substrate 11 on which the transistor 13 or the like of the liquid crystal panel 111A is formed. Such a configuration can reduce the thickness or weight of the touch panel or reduce the number of components of the touch panel, compared to a configuration in which the separately manufactured liquid crystal panel and the detection element are bonded. Moreover, the component provided in the board | substrate 12 side can be simplified. In addition, one or a plurality of FPCs connected to the substrate 11 side can supply both a signal for driving the liquid crystal element and a signal for driving the detection element. Therefore, it is easy to incorporate in an electronic device, and the number of parts can be reduced.
液晶パネル１１１Ａは、ＦＦＳモードが適用されたアクティブマトリクス型の液晶パネルである。液晶パネル１１１Ａは、透過型の液晶パネルである。液晶パネル１１１Ａは、表示パネルとして機能する。
The liquid crystal panel 111A is an active matrix liquid crystal panel to which the FFS mode is applied. The liquid crystal panel 111A is a transmissive liquid crystal panel. The liquid crystal panel 111A functions as a display panel.
液晶パネル１１１Ａは、基板１１、基板１２、トランジスタ１３、絶縁層１４、液晶素子４０ａ、液晶素子４０ｂ等を有する。
The liquid crystal panel 111A includes a substrate 11, a substrate 12, a transistor 13, an insulating layer 14, a liquid crystal element 40a, a liquid crystal element 40b, and the like.
液晶素子４０ａは、電極４１ａ、液晶層４２、及び電極４３ａを有する。液晶素子４０ｂは、電極４１ｂ、液晶層４２、及び電極４３ｂを有する。
The liquid crystal element 40a includes an electrode 41a, a liquid crystal layer 42, and an electrode 43a. The liquid crystal element 40b includes an electrode 41b, a liquid crystal layer 42, and an electrode 43b.
図５（Ａ）では、２つのトランジスタ１３を示す。２つのトランジスタ１３上に絶縁層１４が設けられ、絶縁層１４上に電極４１ａ及び電極４１ｂが設けられている。絶縁層１４に設けられた開口を介して、電極４１ａと２つのトランジスタ１３の一方とは電気的に接続される。絶縁層１４に設けられた開口を介して、電極４１ｂと２つのトランジスタ１３の他方とは電気的に接続される。電極４１ａ及び電極４１ｂは絶縁層４４に覆われており、絶縁層４４上に電極４３ａ及び電極４３ｂが設けられている。電極４１ａは、絶縁層４４を介して電極４３ａと重なる領域を有する。また、電極４１ａは、電極４３ａと重ならない領域も有する。電極４１ｂは、絶縁層４４を介して電極４３ｂと重なる領域を有する。また、電極４１ｂは、電極４３ｂと重ならない領域も有する。液晶層４２は、基板１１と基板１２の間に挟持される。電極４３ａと電極４３ｂとは電気的に絶縁されている。
In FIG. 5A, two transistors 13 are shown. An insulating layer 14 is provided on the two transistors 13, and an electrode 41 a and an electrode 41 b are provided on the insulating layer 14. The electrode 41 a and one of the two transistors 13 are electrically connected through an opening provided in the insulating layer 14. The electrode 41 b and the other of the two transistors 13 are electrically connected through an opening provided in the insulating layer 14. The electrode 41 a and the electrode 41 b are covered with an insulating layer 44, and the electrode 43 a and the electrode 43 b are provided on the insulating layer 44. The electrode 41a has a region overlapping with the electrode 43a with the insulating layer 44 interposed therebetween. The electrode 41a also has a region that does not overlap with the electrode 43a. The electrode 41b has a region overlapping with the electrode 43b with the insulating layer 44 interposed therebetween. The electrode 41b also has a region that does not overlap with the electrode 43b. The liquid crystal layer 42 is sandwiched between the substrate 11 and the substrate 12. The electrode 43a and the electrode 43b are electrically insulated.
タッチパネル１１０Ａでは、電極４３ａと電極４３ｂとの間に形成される容量を利用して、被検知体の近接または接触等を検知することができる。すなわちタッチパネル１１０Ａにおいて、電極４３ａ、４３ｂは、液晶素子の共通電極と、検知素子の電極と、の両方を兼ねる。
In the touch panel 110A, proximity or contact of the detection target can be detected using a capacitance formed between the electrode 43a and the electrode 43b. That is, in the touch panel 110A, the electrodes 43a and 43b serve as both the common electrode of the liquid crystal element and the electrode of the detection element.
このように、本発明の一態様のタッチパネルでは、液晶素子を構成する電極が、検知素子を構成する電極を兼ねるため、作製工程を簡略化でき、かつ作製コストを低減できる。また、タッチパネルの薄型化、軽量化を図ることができる。
As described above, in the touch panel of one embodiment of the present invention, the electrode included in the liquid crystal element also serves as the electrode included in the detection element. Therefore, the manufacturing process can be simplified and the manufacturing cost can be reduced. In addition, the touch panel can be reduced in thickness and weight.
液晶パネル１１２Ａは、液晶パネル２０Ｃ（図２（Ａ））と同様の構成を有する。液晶パネル１１２Ａが有する液晶素子５０は、液晶パネル１１１Ａが有する２以上の液晶素子（図５（Ａ）では液晶素子４０ａ及び液晶素子４０ｂの２つ）と重ねて配置される。つまり、１つの液晶素子５０を用いて、タッチパネル１１０Ａが有する２以上の副画素の調光を行う構成である。また、液晶パネル１１２Ａの１つの副画素を用いて、液晶パネル１１１Ａの２以上の副画素の調光を行う、と言い換えることもできる。このように、表示パネルと調光パネルは、互いに異なる解像度及び精細度とすることができる。表示パネルの解像度は、調光パネルの解像度以上であることが好ましい。
The liquid crystal panel 112A has the same configuration as the liquid crystal panel 20C (FIG. 2A). The liquid crystal element 50 included in the liquid crystal panel 112A is disposed so as to overlap with two or more liquid crystal elements included in the liquid crystal panel 111A (two liquid crystal elements 40a and 40b in FIG. 5A). That is, it is a configuration that performs dimming of two or more subpixels of the touch panel 110 </ b> A using one liquid crystal element 50. In other words, dimming of two or more subpixels of the liquid crystal panel 111A is performed using one subpixel of the liquid crystal panel 112A. In this way, the display panel and the light control panel can have different resolution and definition. The resolution of the display panel is preferably equal to or higher than the resolution of the light control panel.
図５（Ｂ）に示すタッチパネル１１０Ｂは、液晶パネル１１１Ｂ、液晶パネル１１２Ｂ、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
A touch panel 110B illustrated in FIG. 5B includes a liquid crystal panel 111B, a liquid crystal panel 112B, a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
バックライトユニット３０が有する光源から発せられた光３５は、偏光板６１、液晶パネル１１２Ｂ、偏光板６２、液晶パネル１１１Ｂ、偏光板６３をこの順に透過して、タッチパネル１１０Ｂの外部に射出される。光３５が透過するこれらの層の材料には、可視光を透過する材料を用いる。
The light 35 emitted from the light source of the backlight unit 30 passes through the polarizing plate 61, the liquid crystal panel 112B, the polarizing plate 62, the liquid crystal panel 111B, and the polarizing plate 63 in this order, and is emitted to the outside of the touch panel 110B. A material that transmits visible light is used for the material of these layers through which the light 35 is transmitted.
液晶パネル１１１Ｂは、画像を表示する機能と、タッチセンサとしての機能と、を有する。
The liquid crystal panel 111B has a function of displaying an image and a function as a touch sensor.
液晶パネル１１１Ｂは、対向基板（基板１２）にのみに、検知素子を構成する電極等を設けた構成である。このような構成は、別々に作製された表示装置と検知素子とを貼り合わせる構成に比べて、タッチパネルを薄型化もしくは軽量化することができる、または、タッチパネルの部品点数を少なくすることができる。
The liquid crystal panel 111B has a configuration in which an electrode or the like constituting a detection element is provided only on the counter substrate (substrate 12). Such a configuration can reduce the thickness or weight of the touch panel or reduce the number of components of the touch panel, compared to a configuration in which a separately manufactured display device and a detection element are bonded.
検知素子とその周囲の構成について説明する。基板１２には、電極７１及び電極７２が複数設けられている。電極７１及び電極７２は、絶縁層７４を介して、電極７３と重なる。絶縁層７４に設けられた開口を介して、電極７１と電極７３とは電気的に接続される。電極７２を挟むように設けられる２つの電極７１は、電極７３によって電気的に接続される。電極７３は絶縁層７５を介して遮光層３８と重なる。電極７３の可視光の透過性は問わない。電極７１及び電極７２は着色層３９と重なる部分を有するため、可視光の透過性が高いことが好ましい。
The configuration of the detection element and its surroundings will be described. A plurality of electrodes 71 and electrodes 72 are provided on the substrate 12. The electrode 71 and the electrode 72 overlap with the electrode 73 with the insulating layer 74 interposed therebetween. The electrode 71 and the electrode 73 are electrically connected through an opening provided in the insulating layer 74. The two electrodes 71 provided so as to sandwich the electrode 72 are electrically connected by an electrode 73. The electrode 73 overlaps the light shielding layer 38 with the insulating layer 75 interposed therebetween. The visible light transmittance of the electrode 73 does not matter. Since the electrode 71 and the electrode 72 have a portion overlapping the colored layer 39, it is preferable that the visible light transmittance is high.
検知素子を構成する電極を、非表示領域にのみ配置してもよい。検知素子を構成する電極を表示領域と重ねない構成とすることで、当該電極の材料の可視光の透過性が限定されない。そのため、金属等の抵抗率の低い材料を用いることができる。例えば、タッチセンサの配線及び電極として、メタルメッシュを用いることが好ましい。これにより、タッチセンサの配線及び電極の抵抗を下げることができる。また、大型の表示装置のタッチセンサとして好適である。なお、一般的に金属は反射率が大きい材料であるが、酸化処理などを施すことにより暗色にすることができる。したがって、表示面側から視認した場合においても、外光の反射による視認性の低下を抑えることができる。
The electrodes constituting the detection element may be arranged only in the non-display area. By making the electrode constituting the detection element not overlap with the display region, the visible light transmittance of the material of the electrode is not limited. Therefore, a low resistivity material such as metal can be used. For example, it is preferable to use a metal mesh as the wiring and electrodes of the touch sensor. Thereby, the resistance of the wiring and electrodes of the touch sensor can be lowered. Moreover, it is suitable as a touch sensor for a large display device. In general, metal is a material having a high reflectance, but it can be darkened by performing an oxidation treatment or the like. Therefore, even when viewed from the display surface side, it is possible to suppress a decrease in visibility due to reflection of external light.
また、当該配線及び当該電極を、金属層と反射率の小さい層（「暗色層」ともいう。）の積層で形成してもよい。暗色層の一例としては、酸化銅を含む層、塩化銅または塩化テルルを含む層などがある。また、暗色層を、Ａｇ粒子、Ａｇファイバー、Ｃｕ粒子等の金属微粒子、カーボンナノチューブ（ＣＮＴ）、グラフェン等のナノ炭素粒子、並びに、ＰＥＤＯＴ、ポリアニリン、ポリピロールなどの導電性高分子などを用いて形成してもよい。
Alternatively, the wiring and the electrode may be formed using a stack of a metal layer and a layer with low reflectance (also referred to as a “dark color layer”). Examples of the dark color layer include a layer containing copper oxide and a layer containing copper chloride or tellurium chloride. In addition, the dark color layer is formed using fine metal particles such as Ag particles, Ag fibers, and Cu particles, nanocarbon particles such as carbon nanotubes (CNT) and graphene, and conductive polymers such as PEDOT, polyaniline, and polypyrrole. May be.
基板１１上に設けられる構成要素は、図２（Ｂ）に示す液晶パネル１０Ｄと同様である。
The components provided on the substrate 11 are the same as those of the liquid crystal panel 10D illustrated in FIG.
液晶パネル１１２Ｂは、図２（Ｂ）に示す液晶パネル２０Ｄと同様の構成を有する。
The liquid crystal panel 112B has a configuration similar to that of the liquid crystal panel 20D illustrated in FIG.
＜構成例７＞
以降の構成例では、表示装置のより具体的な断面構造について説明する。 <Configuration example 7>
In the following configuration examples, a more specific cross-sectional structure of the display device will be described.
以降の構成例では、表示装置のより具体的な断面構造について説明する。 <Configuration example 7>
In the following configuration examples, a more specific cross-sectional structure of the display device will be described.
構成例７では、表示用の液晶パネルに、ＦＦＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いた表示装置について説明する。
In the configuration example 7, an active matrix liquid crystal panel to which the FFS mode is applied is used as the liquid crystal panel for display, and an active matrix liquid crystal panel to which the TN mode is applied is used as the liquid crystal panel for light control. The display device will be described.
図６に、表示装置２００Ａの断面図を示す。表示装置２００Ａは、表示用の液晶パネルである液晶パネル８０Ａと、調光用の液晶パネルである液晶パネル９０Ａとを有する。表示装置２００Ａは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 6 shows a cross-sectional view of the display device 200A. The display device 200A includes a liquid crystal panel 80A that is a liquid crystal panel for display and a liquid crystal panel 90A that is a liquid crystal panel for dimming. The display device 200 </ b> A further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
図６は、構成例３（図２（Ａ）に示す表示装置１００Ｃ）及び構成例４（図３（Ａ）に示す表示装置１００Ｅ）に対応する表示装置の具体例といえる。
6 can be a specific example of a display device corresponding to the configuration example 3 (the display device 100C illustrated in FIG. 2A) and the configuration example 4 (the display device 100E illustrated in FIG. 3A).
表示装置２００Ａは、表示部１６２及び駆動回路部１６４を有する。
The display device 200A includes a display unit 162 and a drive circuit unit 164.
表示部１６２は複数の画素を有し、画像を表示する機能を有する。
The display portion 162 includes a plurality of pixels and has a function of displaying an image.
画素は、複数の副画素を有する。例えば、赤色を呈する副画素、緑色を呈する副画素、及び青色を呈する副画素によって１つの画素が構成されることで、表示部１６２ではフルカラーの表示を行うことができる。なお、副画素が呈する色は、赤、緑、及び青に限られない。画素には、例えば、白、黄、マゼンタ、またはシアン等の色を呈する副画素を用いてもよい。
The pixel has a plurality of subpixels. For example, the display unit 162 can perform full-color display by including one pixel including a red sub-pixel, a green sub-pixel, and a blue sub-pixel. In addition, the color which a subpixel exhibits is not restricted to red, green, and blue. As the pixel, for example, a sub-pixel exhibiting a color such as white, yellow, magenta, or cyan may be used.
表示部１６２では、液晶パネル９０Ａの透過領域と、液晶パネル８０Ａの表示領域とが積層される。バックライトユニット３０が有する光源から発せられた光は、偏光板６１、液晶パネル９０Ａの透過領域、偏光板６２、液晶パネル８０Ａの表示領域、偏光板６３をこの順に透過して、表示装置２００Ａの外部に射出される。光が透過するこれらの層の材料には、可視光を透過する材料を用いる。
In the display unit 162, the transmission region of the liquid crystal panel 90A and the display region of the liquid crystal panel 80A are stacked. The light emitted from the light source included in the backlight unit 30 is transmitted through the polarizing plate 61, the transmission region of the liquid crystal panel 90A, the polarizing plate 62, the display region of the liquid crystal panel 80A, and the polarizing plate 63 in this order. It is injected outside. A material that transmits visible light is used as a material for these layers through which light is transmitted.
液晶パネル８０Ａ及び液晶パネル９０Ａは、それぞれ独立に、走査線駆動回路及び信号線駆動回路のうち一方または双方を有することができる。または、液晶パネル８０Ａ及び液晶パネル９０Ａは、走査線駆動回路及び信号線駆動回路の双方を有していなくてもよい。液晶パネルが、タッチセンサ等のセンサを有する場合、当該液晶パネルは、センサ駆動回路を有していてもよい。また、液晶パネルには、信号線駆動回路、走査線駆動回路、及びセンサ駆動回路のうち、一つ又は複数を有するＩＣ（集積回路）が接続されていてもよい。
The liquid crystal panel 80A and the liquid crystal panel 90A can independently have one or both of a scanning line driving circuit and a signal line driving circuit. Alternatively, the liquid crystal panel 80A and the liquid crystal panel 90A may not include both the scanning line driving circuit and the signal line driving circuit. When the liquid crystal panel includes a sensor such as a touch sensor, the liquid crystal panel may include a sensor driving circuit. In addition, an IC (integrated circuit) having one or more of a signal line driver circuit, a scan line driver circuit, and a sensor driver circuit may be connected to the liquid crystal panel.
液晶パネル８０Ａには、接続体２４２ｂを介して、ＦＰＣ１７２ｂが電気的に接続されている。液晶パネル９０Ａには、接続体２４２ａを介して、ＦＰＣ１７２ａが電気的に接続されている。各ＦＰＣを介して、駆動回路部１６４に外部から信号及び電力が供給される。表示部１６２及び駆動回路部１６４には、導電層２５１及び配線２２２ｃを介して、信号及び電力が供給される。なお、図６では、液晶パネル８０ＡのＦＰＣ１７２ｂが接続される部分と液晶パネル９０ＡのＦＰＣ１７２ａが接続される部分とが重なる例を示すが、本発明の一態様はこれに限られず、これらの部分は互いに重ならなくてもよい。
The FPC 172b is electrically connected to the liquid crystal panel 80A through the connection body 242b. An FPC 172a is electrically connected to the liquid crystal panel 90A via a connection body 242a. A signal and power are supplied from the outside to the drive circuit unit 164 via each FPC. Signals and power are supplied to the display portion 162 and the driver circuit portion 164 through the conductive layer 251 and the wiring 222c. Note that FIG. 6 illustrates an example in which a portion to which the FPC 172b of the liquid crystal panel 80A is connected and a portion to which the FPC 172a of the liquid crystal panel 90A are connected overlap, but one embodiment of the present invention is not limited thereto, and these portions are It does not have to overlap each other.
まず、液晶パネル９０Ａの構成について説明する。
First, the configuration of the liquid crystal panel 90A will be described.
図６に示すように、液晶パネル９０Ａは、基板２１、トランジスタ２０１ａ、トランジスタ２３ａ、液晶素子５０、配向膜１３３ａ、配向膜１３３ｂ、接着層１４１ａ、基板２２等を有する。
As shown in FIG. 6, the liquid crystal panel 90A includes a substrate 21, a transistor 201a, a transistor 23a, a liquid crystal element 50, an alignment film 133a, an alignment film 133b, an adhesive layer 141a, a substrate 22, and the like.
表示部１６２には、トランジスタ２３ａが設けられている。トランジスタ２３ａは、ゲート電極として機能する導電層２２１と、ゲート絶縁層として機能する絶縁層２１１と、半導体層２３１と、ソース電極及びドレイン電極として機能する導電層２２２ａ及び導電層２２２ｂと、を有する。トランジスタ２３ａは、絶縁層２１７及び絶縁層２１８に覆われている。絶縁層２１５は、平坦化膜として機能する。トランジスタ２３ａは、半導体層２３１に、金属酸化物を有する。導電層２２２ｂは、絶縁層２１７、絶縁層２１８、及び絶縁層２１５に設けられた開口を介して、電極５１と電気的に接続されている。
The display portion 162 is provided with a transistor 23a. The transistor 23a includes a conductive layer 221 functioning as a gate electrode, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231, and a conductive layer 222a and a conductive layer 222b functioning as a source electrode and a drain electrode. The transistor 23 a is covered with an insulating layer 217 and an insulating layer 218. The insulating layer 215 functions as a planarization film. The transistor 23a includes a metal oxide in the semiconductor layer 231. The conductive layer 222b is electrically connected to the electrode 51 through an opening provided in the insulating layer 217, the insulating layer 218, and the insulating layer 215.
駆動回路部１６４には、トランジスタ２０１ａが設けられている。トランジスタ２０１ａは、トランジスタ２３ａと同様の構成を有する。
The driver circuit portion 164 is provided with a transistor 201a. The transistor 201a has a structure similar to that of the transistor 23a.
表示部１６２には、液晶素子５０が設けられている。液晶素子５０は、ＴＮモードが適用された液晶素子である。
The display unit 162 is provided with a liquid crystal element 50. The liquid crystal element 50 is a liquid crystal element to which the TN mode is applied.
液晶素子５０は、電極５１、電極５３、及び液晶層５２を有する。電極５１と電極５３との間に生じる電界により、液晶層５２の配向を制御することができる。液晶層５２は、配向膜１３３ａと配向膜１３３ｂの間に位置する。配向膜は、液晶層５２の配向を制御することができる。液晶パネル９０Ａでは、電極５１と液晶層５２との間に配向膜１３３ａが位置し、電極５３と液晶層５２との間に配向膜１３３ｂが位置している。
The liquid crystal element 50 includes an electrode 51, an electrode 53, and a liquid crystal layer 52. The alignment of the liquid crystal layer 52 can be controlled by an electric field generated between the electrode 51 and the electrode 53. The liquid crystal layer 52 is located between the alignment film 133a and the alignment film 133b. The alignment film can control the alignment of the liquid crystal layer 52. In the liquid crystal panel 90 </ b> A, the alignment film 133 a is positioned between the electrode 51 and the liquid crystal layer 52, and the alignment film 133 b is positioned between the electrode 53 and the liquid crystal layer 52.
基板２１及び基板２２は、接着層１４１ａによって貼り合わされている。基板２１、基板２２、及び接着層１４１ａに囲まれた領域に、液晶層５２が封止されている。
The board | substrate 21 and the board | substrate 22 are bonded together by the contact bonding layer 141a. A liquid crystal layer 52 is sealed in a region surrounded by the substrate 21, the substrate 22, and the adhesive layer 141a.
次に、液晶パネル８０Ａの構成について説明する。
Next, the configuration of the liquid crystal panel 80A will be described.
図６に示すように、液晶パネル８０Ａは、基板１１、トランジスタ２０１ｂ、ランジスタ１３ａ、液晶素子４０、配向膜１３３ｃ、配向膜１３３ｄ、着色層３９、遮光層３８、オーバーコート１２１、接着層１４１ｂ、基板１２等を有する。
As shown in FIG. 6, the liquid crystal panel 80A includes a substrate 11, a transistor 201b, a transistor 13a, a liquid crystal element 40, an alignment film 133c, an alignment film 133d, a colored layer 39, a light shielding layer 38, an overcoat 121, an adhesive layer 141b, and a substrate. 12 etc.
基板１１から電極４１までの積層構造は、液晶パネル９０Ａの基板２１から電極５１までの積層構造と同様であるため、詳細な説明は省略する。
Since the laminated structure from the substrate 11 to the electrode 41 is the same as the laminated structure from the substrate 21 to the electrode 51 of the liquid crystal panel 90A, detailed description thereof is omitted.
表示部１６２には、液晶素子４０が設けられている。液晶素子４０は、ＦＦＳモードが適用された液晶素子である。
A liquid crystal element 40 is provided in the display unit 162. The liquid crystal element 40 is a liquid crystal element to which the FFS mode is applied.
液晶素子４０は、電極４１、電極４３、及び液晶層４２を有する。電極４１と電極４３との間に生じる電界により、液晶層４２の配向を制御することができる。液晶層４２は、配向膜１３３ｃと配向膜１３３ｄの間に位置する。配向膜は、液晶層４２の配向を制御することができる。液晶パネル８０Ａでは、電極４３及び絶縁層４４と液晶層４２との間に配向膜１３３ｃが位置し、オーバーコート１２１と液晶層４２との間に配向膜１３３ｄが位置している。
The liquid crystal element 40 includes an electrode 41, an electrode 43, and a liquid crystal layer 42. The alignment of the liquid crystal layer 42 can be controlled by an electric field generated between the electrode 41 and the electrode 43. The liquid crystal layer 42 is located between the alignment film 133c and the alignment film 133d. The alignment film can control the alignment of the liquid crystal layer 42. In the liquid crystal panel 80 </ b> A, the alignment film 133 c is positioned between the electrode 43 and the insulating layer 44 and the liquid crystal layer 42, and the alignment film 133 d is positioned between the overcoat 121 and the liquid crystal layer 42.
電極４３は、例えば、櫛歯状の上面形状（平面形状ともいう）、またはスリットが設けられた上面形状を有する。
The electrode 43 has, for example, a comb-like top surface shape (also referred to as a planar shape) or a top surface shape provided with a slit.
電極４１と電極４３の間には、絶縁層４４が設けられている。電極４１は、絶縁層４４を介して電極４３と重なる部分を有する。また、電極４１と着色層３９とが重なる領域において、電極４１上に電極４３が配置されていない部分を有する。
An insulating layer 44 is provided between the electrode 41 and the electrode 43. The electrode 41 has a portion that overlaps the electrode 43 with the insulating layer 44 interposed therebetween. Further, in a region where the electrode 41 and the colored layer 39 overlap, there is a portion where the electrode 43 is not disposed on the electrode 41.
着色層３９及び遮光層３８と、液晶層４２と、の間には、オーバーコート１２１を設けることが好ましい。オーバーコート１２１は、着色層３９及び遮光層３８等に含まれる不純物が液晶層４２に拡散することを抑制できる。
An overcoat 121 is preferably provided between the colored layer 39 and the light shielding layer 38 and the liquid crystal layer 42. The overcoat 121 can suppress the diffusion of impurities contained in the colored layer 39 and the light shielding layer 38 into the liquid crystal layer 42.
次に、本実施の形態の表示装置の各構成要素に用いることができる材料等の詳細について、説明を行う。
Next, details of materials and the like that can be used for each component of the display device of this embodiment will be described.
表示装置が有する基板の材質などに大きな制限はなく、様々な基板を用いることができる。例えば、ガラス基板、石英基板、サファイア基板、半導体基板、セラミック基板、金属基板、またはプラスチック基板等を用いることができる。
There is no particular limitation on the material of the substrate included in the display device, and various substrates can be used. For example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, a plastic substrate, or the like can be used.
厚さの薄い基板を用いることで、表示装置の軽量化及び薄型化を図ることができる。さらに、可撓性を有する程度の厚さの基板を用いることで、可撓性を有する表示装置を実現できる。
By using a thin substrate, the display device can be reduced in weight and thickness. Furthermore, a flexible display device can be realized by using a flexible substrate.
液晶材料には、誘電率の異方性（Δε）が正であるポジ型の液晶材料と、負であるネガ型の液晶材料がある。本発明の一態様では、どちらの材料を用いることもでき、適用するモード及び設計に応じて最適な液晶材料を用いることができる。
As the liquid crystal material, there are a positive liquid crystal material having a positive dielectric anisotropy (Δε) and a negative liquid crystal material having a negative dielectric constant. In one embodiment of the present invention, either material can be used, and an optimum liquid crystal material can be used depending on a mode to be applied and a design.
本実施の形態の表示装置では、様々なモードが適用された液晶素子を用いることができる。上述したＦＦＳモード、ＩＰＳモード、ＴＮモードのほかに、例えば、ＶＡ（Ｖｅｒｔｉｃａｌ Ａｌｉｇｎｍｅｎｔ）モード、ＡＳＭ（Ａｘｉａｌｌｙ Ｓｙｍｍｅｔｒｉｃ ａｌｉｇｎｅｄ Ｍｉｃｒｏ−ｃｅｌｌ）モード、ＯＣＢ（Ｏｐｔｉｃａｌｌｙ Ｃｏｍｐｅｎｓａｔｅｄ Ｂｉｒｅｆｒｉｎｇｅｎｃｅ）モード、ＦＬＣ（Ｆｅｒｒｏｅｌｅｃｔｒｉｃ Ｌｉｑｕｉｄ Ｃｒｙｓｔａｌ）モード、ＡＦＬＣ（ＡｎｔｉＦｅｒｒｏｅｌｅｃｔｒｉｃ Ｌｉｑｕｉｄ Ｃｒｙｓｔａｌ）モード、ＥＣＢ（Ｅｌｅｃｔｒｉｃａｌｌｙ Ｃｏｎｔｒｏｌｌｅｄ Ｂｉｒｅｆｒｉｎｇｅｎｃｅ）モード、ＶＡ−ＩＰＳモード、ゲストホストモード、垂直配向（ＶＡ）モード等が適用された液晶素子を用いることができる。垂直配向モードとしては、ＭＶＡ（Ｍｕｌｔｉ−Ｄｏｍａｉｎ Ｖｅｒｔｉｃａｌ Ａｌｉｇｎｍｅｎｔ）モード、ＰＶＡ（Ｐａｔｔｅｒｎｅｄ Ｖｅｒｔｉｃａｌ Ａｌｉｇｎｍｅｎｔ）モード、ＡＳＶ（Ａｄｖａｎｃｅｄ Ｓｕｐｅｒ Ｖｉｅｗ）モードなどを用いることができる。
In the display device in this embodiment, liquid crystal elements to which various modes are applied can be used. In addition to the FFS mode, IPS mode, and TN mode described above, for example, VA (Vertical Alignment) mode, ASM (Axial Symmetrical Aligned Micro-cell) mode, OCB (Optically Compensated Birefringence LC) mode. A liquid crystal element to which an AFLC (Antiferroelectric Liquid Crystal) mode, an ECB (Electrically Controlled Birefringence) mode, a VA-IPS mode, a guest-host mode, a vertical alignment (VA) mode, or the like can be used. As the vertical alignment mode, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ASV (Advanced Super View) mode, or the like can be used.
なお、液晶素子は、液晶の光学変調作用によって光の透過または非透過を制御する素子である。液晶の光学的変調作用は、液晶にかかる電界（横方向の電界、縦方向の電界または斜め方向の電界を含む）によって制御される。液晶素子に用いる液晶としては、サーモトロピック液晶、低分子液晶、高分子液晶、高分子分散型液晶（ＰＤＬＣ：Ｐｏｌｙｍｅｒ Ｄｉｓｐｅｒｓｅｄ Ｌｉｑｕｉｄ Ｃｒｙｓｔａｌ）、強誘電性液晶、反強誘電性液晶等を用いることができる。これらの液晶材料は、条件により、コレステリック相、スメクチック相、キュービック相、カイラルネマチック相、等方相等を示す。
Note that the liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal. The optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). As the liquid crystal used in the liquid crystal element, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal (PDLC), a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used. . These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, and the like depending on conditions.
また、横電界方式を採用する場合、配向膜を用いないブルー相を示す液晶を用いてもよい。ブルー相は液晶相の一つであり、コレステリック液晶を昇温していくと、コレステリック相から等方相へ転移する直前に発現する相である。ブルー相は狭い温度範囲でしか発現しないため、温度範囲を改善するために５重量％以上のカイラル剤を混合させた液晶組成物を液晶層に用いる。ブルー相を示す液晶とカイラル剤とを含む液晶組成物は、応答速度が短く、光学的等方性を示す。また、ブルー相を示す液晶とカイラル剤とを含む液晶組成物は、配向処理が不要であり、視野角依存性が小さい。また配向膜を設けなくてもよいのでラビング処理も不要となるため、ラビング処理によって引き起こされる静電破壊を防止することができ、作製工程中の表示パネルの不良または破損を軽減することができる。
In the case of employing a horizontal electric field method, a liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used. The blue phase is one of the liquid crystal phases. When the temperature of the cholesteric liquid crystal is increased, the blue phase appears immediately before the transition from the cholesteric phase to the isotropic phase. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with 5% by weight or more of a chiral agent is used for the liquid crystal layer in order to improve the temperature range. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and exhibits optical isotropy. In addition, a liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. Further, since an alignment film is not necessarily provided, a rubbing process is not necessary, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects or breakage of the display panel during the manufacturing process can be reduced.
本実施の形態の表示装置が有する液晶パネルは、透過型の液晶パネルであるため、一対の電極の双方に、可視光を透過する導電性材料を用いる。
Since the liquid crystal panel included in the display device of this embodiment is a transmissive liquid crystal panel, a conductive material that transmits visible light is used for both of the pair of electrodes.
可視光を透過する導電性材料としては、例えば、インジウム（Ｉｎ）、亜鉛（Ｚｎ）、錫（Ｓｎ）の中から選ばれた一種以上を含む材料を用いるとよい。具体的には、酸化インジウム、インジウム錫酸化物（ＩＴＯ）、インジウム亜鉛酸化物、酸化タングステンを含むインジウム酸化物、酸化タングステンを含むインジウム亜鉛酸化物、酸化チタンを含むインジウム酸化物、酸化チタンを含むインジウム錫酸化物、酸化シリコンを含むインジウム錫酸化物（ＩＴＳＯ）、酸化亜鉛、ガリウムを含む酸化亜鉛などが挙げられる。なお、グラフェンを含む膜を用いることもできる。グラフェンを含む膜は、例えば酸化グラフェンを含む膜を還元して形成することができる。
As the conductive material that transmits visible light, for example, a material containing one or more selected from indium (In), zinc (Zn), and tin (Sn) may be used. Specifically, indium oxide, indium tin oxide (ITO), indium zinc oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, and titanium oxide are included. Examples thereof include indium tin oxide, indium tin oxide containing silicon oxide (ITSO), zinc oxide, and zinc oxide containing gallium. Note that a film containing graphene can also be used. The film containing graphene can be formed by, for example, reducing a film containing graphene oxide.
また、可視光を透過する導電膜は、酸化物半導体を用いて形成することができる（以下、酸化物導電層ともいう）。酸化物導電層は、例えば、インジウムを含むことが好ましく、Ｉｎ−Ｍ−Ｚｎ酸化物（ＭはＡｌ、Ｔｉ、Ｇａ、Ｙ、Ｚｒ、Ｌａ、Ｃｅ、Ｎｄ、ＳｎまたはＨｆ）を含むことがさらに好ましい。
The conductive film that transmits visible light can be formed using an oxide semiconductor (hereinafter also referred to as an oxide conductive layer). The oxide conductive layer preferably includes, for example, indium, and further includes an In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf). preferable.
酸化物半導体は、膜中の酸素欠損、及び膜中の水素、水等の不純物濃度のうち少なくとも一方によって、抵抗を制御することができる半導体材料である。そのため、酸化物半導体層へ酸素欠損及び不純物濃度の少なくとも一方が増加する処理、または酸素欠損及び不純物濃度の少なくとも一方が低減する処理を選択することによって、酸化物導電層の有する抵抗率を制御することができる。
An oxide semiconductor is a semiconductor material whose resistance can be controlled by at least one of oxygen vacancies in the film and impurity concentrations of hydrogen, water, and the like in the film. Therefore, the resistivity of the oxide conductive layer is controlled by selecting a treatment in which at least one of oxygen vacancies and impurity concentrations is increased or a treatment in which at least one of oxygen vacancies and impurity concentrations is reduced in the oxide semiconductor layer. be able to.
なお、このように、酸化物半導体を用いて形成された酸化物導電層は、キャリア密度が高く低抵抗な酸化物半導体層、導電性を有する酸化物半導体層、または導電性の高い酸化物半導体層ということもできる。
Note that an oxide conductive layer formed using an oxide semiconductor in this manner is an oxide semiconductor layer with high carrier density and low resistance, an oxide semiconductor layer with conductivity, or an oxide semiconductor with high conductivity. It can also be called a layer.
本実施の形態の表示装置が有するトランジスタは、トップゲート型またはボトムゲート型のいずれの構造としてもよい。または、チャネルの上下にゲート電極が設けられていてもよい。トランジスタに用いる半導体材料は特に限定されず、例えば、酸化物半導体、シリコン、ゲルマニウム等が挙げられる。
The transistor included in the display device of this embodiment may have a top-gate structure or a bottom-gate structure. Alternatively, gate electrodes may be provided above and below the channel. A semiconductor material used for the transistor is not particularly limited, and examples thereof include an oxide semiconductor, silicon, and germanium.
トランジスタに用いる半導体材料の結晶性についても特に限定されず、非晶質半導体、結晶性を有する半導体（微結晶半導体、多結晶半導体、単結晶半導体、または一部に結晶領域を有する半導体）のいずれを用いてもよい。結晶性を有する半導体を用いると、トランジスタ特性の劣化を抑制できるため好ましい。
There is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
例えば、第１４族の元素、化合物半導体または酸化物半導体を半導体層に用いることができる。代表的には、シリコンを含む半導体、ガリウムヒ素を含む半導体またはインジウムを含む酸化物半導体などを半導体層に適用できる。
For example, a Group 14 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used for the semiconductor layer.
トランジスタのチャネルが形成される半導体に、酸化物半導体を適用することが好ましい。特にシリコンよりもバンドギャップの大きな酸化物半導体を適用することが好ましい。シリコンよりもバンドギャップが広く、且つキャリア密度の小さい半導体材料を用いると、トランジスタのオフ状態における電流を低減できるため好ましい。
An oxide semiconductor is preferably used as a semiconductor in which a channel of the transistor is formed. In particular, an oxide semiconductor having a larger band gap than silicon is preferably used. It is preferable to use a semiconductor material with a wider band gap and lower carrier density than silicon because current in an off state of the transistor can be reduced.
酸化物半導体については、実施の形態３で詳述する。
The oxide semiconductor will be described in detail in Embodiment 3.
酸化物半導体を用いることで、電気特性の変動が抑制され、信頼性の高いトランジスタを実現できる。
By using an oxide semiconductor, a change in electrical characteristics is suppressed and a highly reliable transistor can be realized.
また、その低いオフ電流により、トランジスタを介して容量に蓄積した電荷を長期間に亘って保持することが可能である。このようなトランジスタを画素に適用することで、表示した画像の階調を維持しつつ、駆動回路を停止することも可能となる。その結果、極めて消費電力の低減された表示装置を実現できる。
In addition, due to the low off-state current, the charge accumulated in the capacitor through the transistor can be held for a long time. By applying such a transistor to a pixel, the driving circuit can be stopped while maintaining the gradation of the displayed image. As a result, a display device with extremely reduced power consumption can be realized.
トランジスタは、高純度化し、酸素欠損の形成を抑制した酸化物半導体層を有することが好ましい。これにより、トランジスタのオフ状態における電流値（オフ電流値）を低くすることができる。よって、画像信号等の電気信号の保持時間を長くすることができ、電源オン状態では書き込み間隔も長く設定できる。よって、リフレッシュ動作の頻度を少なくすることができるため、消費電力を抑制する効果を奏する。
The transistor preferably includes an oxide semiconductor layer that is highly purified and suppresses formation of oxygen vacancies. Thus, the current value (off-current value) in the off state of the transistor can be reduced. Therefore, the holding time of an electric signal such as an image signal can be increased, and the writing interval can be set longer in the power-on state. Therefore, since the frequency of the refresh operation can be reduced, there is an effect of suppressing power consumption.
また、酸化物半導体を用いたトランジスタは、比較的高い電界効果移動度が得られるため、高速駆動が可能である。このような高速駆動が可能なトランジスタを表示装置に用いることで、表示部のトランジスタと、駆動回路部のトランジスタを同一基板上に形成することができる。すなわち、駆動回路として、別途、シリコンウェハ等により形成された半導体装置を用いる必要がないため、表示装置の部品点数を削減することができる。また、表示部においても、高速駆動が可能なトランジスタを用いることで、高画質な画像を提供することができる。
A transistor including an oxide semiconductor can be driven at high speed because a relatively high field-effect mobility can be obtained. By using such a transistor capable of high-speed driving for a display device, the transistor in the display portion and the transistor in the driver circuit portion can be formed over the same substrate. That is, it is not necessary to separately use a semiconductor device formed of a silicon wafer or the like as the drive circuit, so that the number of parts of the display device can be reduced. In the display portion, a high-quality image can be provided by using a transistor that can be driven at high speed.
駆動回路部１６４が有するトランジスタと表示部１６２が有するトランジスタは、同じ構造であってもよく、異なる構造であってもよい。駆動回路部１６４が有するトランジスタは、全て同じ構造であってもよく、２種類以上の構造が組み合わせて用いられていてもよい。同様に、表示部１６２が有するトランジスタは、全て同じ構造であってもよく、２種類以上の構造が組み合わせて用いられていてもよい。
The transistor included in the driver circuit portion 164 and the transistor included in the display portion 162 may have the same structure or different structures. The transistors included in the driver circuit portion 164 may have the same structure, or two or more structures may be used in combination. Similarly, the transistors included in the display portion 162 may have the same structure, or two or more structures may be used in combination.
表示装置が有する各絶縁層、オーバーコート等に用いることのできる絶縁材料としては、有機絶縁材料または無機絶縁材料を用いることができる。有機絶縁材料としては、例えば、アクリル樹脂、エポキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリイミドアミド樹脂、シロキサン樹脂、ベンゾシクロブテン系樹脂、及びフェノール樹脂等が挙げられる。無機絶縁層としては、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜、及び酸化ネオジム膜等が挙げられる。
As an insulating material that can be used for each insulating layer, overcoat, or the like included in the display device, an organic insulating material or an inorganic insulating material can be used. Examples of the organic insulating material include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, and phenol resin. As the inorganic insulating layer, silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide Examples thereof include a film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film.
トランジスタのゲート、ソース、ドレインのほか、表示装置が有する各種配線及び電極等の導電層には、アルミニウム、チタン、クロム、ニッケル、銅、イットリウム、ジルコニウム、モリブデン、銀、タンタル、またはタングステンなどの金属、またはこれを主成分とする合金を単層構造または積層構造として用いることができる。例えば、アルミニウム膜上にチタン膜を積層する二層構造、タングステン膜上にチタン膜を積層する二層構造、モリブデン膜上に銅膜を積層した二層構造、モリブデンとタングステンを含む合金膜上に銅膜を積層した二層構造、銅−マグネシウム−アルミニウム合金膜上に銅膜を積層する二層構造、チタン膜または窒化チタン膜と、そのチタン膜または窒化チタン膜上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にチタン膜または窒化チタン膜を形成する三層構造、モリブデン膜または窒化モリブデン膜と、そのモリブデン膜または窒化モリブデン膜上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にモリブデン膜または窒化モリブデン膜を形成する三層構造等がある。例えば、導電層を三層構造とする場合、一層目及び三層目には、チタン、窒化チタン、モリブデン、タングステン、モリブデンとタングステンを含む合金、モリブデンとジルコニウムを含む合金、または窒化モリブデンでなる膜を形成し、二層目には、銅、アルミニウム、金または銀、或いは銅とマンガンの合金等の低抵抗材料でなる膜を形成することが好ましい。なお、ＩＴＯ、酸化タングステンを含むインジウム酸化物、酸化タングステンを含むインジウム亜鉛酸化物、酸化チタンを含むインジウム酸化物、酸化チタンを含むインジウム錫酸化物、インジウム亜鉛酸化物、ＩＴＳＯ等の透光性を有する導電性材料を用いてもよい。なお、酸化物半導体の抵抗率を制御することで、酸化物導電層を形成してもよい。
In addition to the gate, source, and drain of the transistor, conductive layers such as various wirings and electrodes of the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Alternatively, an alloy containing this as a main component can be used as a single layer structure or a stacked structure. For example, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a molybdenum film, or an alloy film containing molybdenum and tungsten Two-layer structure in which a copper film is laminated, two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a titanium film or a titanium nitride film, and an aluminum film or copper layered on the titanium film or titanium nitride film A three-layer structure in which a film is stacked and a titanium film or a titanium nitride film is further formed thereon, a molybdenum film or a molybdenum nitride film, and an aluminum film or a copper film is stacked on the molybdenum film or the molybdenum nitride film, Further, there is a three-layer structure on which a molybdenum film or a molybdenum nitride film is formed. For example, when the conductive layer has a three-layer structure, the first and third layers include titanium, titanium nitride, molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy containing molybdenum and zirconium, or a film made of molybdenum nitride. In the second layer, a film made of a low resistance material such as copper, aluminum, gold or silver, or an alloy of copper and manganese is preferably formed. In addition, ITO, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, etc. You may use the electroconductive material which has. Note that the oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.
接着層１４１ａ、接着層１４１ｂとしては、熱硬化樹脂、光硬化樹脂、または２液混合型の硬化性樹脂などの硬化性樹脂を用いることができる。例えば、アクリル樹脂、ウレタン樹脂、エポキシ樹脂、またはシロキサン樹脂などを用いることができる。
As the adhesive layer 141a and the adhesive layer 141b, a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin can be used. For example, an acrylic resin, a urethane resin, an epoxy resin, a siloxane resin, or the like can be used.
接続体２４２ａ、接続体２４２ｂとしては、例えば、異方性導電フィルム（ＡＣＦ：Ａｎｉｓｏｔｒｏｐｉｃ Ｃｏｎｄｕｃｔｉｖｅ Ｆｉｌｍ）、または異方性導電ペースト（ＡＣＰ：Ａｎｉｓｏｔｒｏｐｉｃ Ｃｏｎｄｕｃｔｉｖｅ Ｐａｓｔｅ）などを用いることができる。
As the connecting body 242a and the connecting body 242b, for example, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.
着色層３９は特定の波長域の光を透過する有色層である。着色層３９に用いることのできる材料としては、金属材料、樹脂材料、及び顔料または染料が含まれた樹脂材料などが挙げられる。
The colored layer 39 is a colored layer that transmits light in a specific wavelength range. Examples of materials that can be used for the colored layer 39 include metal materials, resin materials, and resin materials containing pigments or dyes.
遮光層３８は、例えば、隣接する異なる色の着色層３９の間に設けられる。例えば、金属材料、または、顔料もしくは染料を含む樹脂材料を用いて形成されたブラックマトリクスを遮光層３８として用いることができる。なお、遮光層３８は、駆動回路部１６４など、表示部１６２以外の領域にも設けると、導波光などによる光漏れを抑制できるため好ましい。
The light shielding layer 38 is provided, for example, between the adjacent colored layers 39 of different colors. For example, a black matrix formed using a metal material or a resin material containing a pigment or dye can be used as the light shielding layer 38. Note that the light shielding layer 38 is preferably provided in a region other than the display portion 162 such as the drive circuit portion 164 because light leakage due to guided light or the like can be suppressed.
表示装置を構成する薄膜（絶縁膜、半導体膜、導電膜等）は、それぞれ、スパッタリング法、化学気相堆積（ＣＶＤ：Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）法、真空蒸着法、パルスレーザー堆積（ＰＬＤ：Ｐｕｌｓｅｄ Ｌａｓｅｒ Ｄｅｐｏｓｉｔｉｏｎ）法、原子層成膜（ＡＬＤ：Ａｔｏｍｉｃ Ｌａｙｅｒ Ｄｅｐｏｓｉｔｉｏｎ）法等を用いて形成することができる。ＣＶＤ法の例として、プラズマ化学気相堆積（ＰＥＣＶＤ：Ｐｌａｓｍａ Ｅｎｈａｎｃｅｄ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）法及び熱ＣＶＤ法等が挙げられる。熱ＣＶＤ法の例として、有機金属化学気相堆積（ＭＯＣＶＤ：Ｍｅｔａｌ Ｏｒｇａｎｉｃ ＣＶＤ）法が挙げられる。
Thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device are respectively formed by sputtering, chemical vapor deposition (CVD), vacuum evaporation, and pulsed laser deposition (PLD: Pulsed Laser Deposition). ) Method, atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like. Examples of the CVD method include a plasma enhanced chemical vapor deposition (PECVD) method, a thermal chemical vapor deposition (PECVD) method, a thermal CVD method, and the like. An example of the thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.
表示装置を構成する薄膜（絶縁膜、半導体膜、導電膜等）は、それぞれ、スピンコート、ディップ、スプレー塗布、インクジェット印刷、ディスペンス、スクリーン印刷、オフセット印刷、ドクターナイフ、スリットコート、ロールコート、カーテンコート、ナイフコート等の方法により形成することができる。
Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices are spin coat, dip, spray coating, ink jet printing, dispensing, screen printing, offset printing, doctor knife, slit coat, roll coat, curtain, respectively. It can be formed by a method such as coating or knife coating.
表示装置を構成する薄膜は、フォトリソグラフィ法等を用いて加工することができる。または、遮蔽マスクを用いた成膜方法により、島状の薄膜を形成してもよい。または、ナノインプリント法、サンドブラスト法、もしくはリフトオフ法などにより薄膜を加工してもよい。フォトリソグラフィ法としては、加工したい薄膜上にレジストマスクを形成して、エッチング等により当該薄膜を加工し、レジストマスクを除去する方法と、感光性を有する薄膜を成膜した後に、露光、現像を行って、当該薄膜を所望の形状に加工する方法と、がある。
A thin film included in the display device can be processed using a photolithography method or the like. Alternatively, an island-shaped thin film may be formed by a film formation method using a shielding mask. Alternatively, the thin film may be processed by a nanoimprint method, a sand blast method, a lift-off method, or the like. As a photolithography method, a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. After forming a photosensitive thin film, exposure and development are performed. And a method for processing the thin film into a desired shape.
フォトリソグラフィ法において、露光に用いる光としては、例えばｉ線（波長３６５ｎｍ）、ｇ線（波長４３６ｎｍ）、ｈ線（波長４０５ｎｍ）、及びこれらを混合させた光が挙げられる。そのほか、紫外線、ＫｒＦレーザ光、またはＡｒＦレーザ光等を用いることもできる。また、液浸露光技術により露光を行ってもよい。露光に用いる光としては、極端紫外光（ＥＵＶ：Ｅｘｔｒｅｍｅ Ｕｌｔｒａ−ｖｉｏｌｅｔ）及びＸ線等が挙げられる。また、露光に用いる光に換えて、電子ビームを用いることもできる。極端紫外光、Ｘ線または電子ビームを用いると、極めて微細な加工が可能となるため好ましい。なお、電子ビームなどのビームを走査することにより露光を行う場合には、フォトマスクは不要である。
Examples of the light used for exposure in the photolithography method include i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), and light obtained by mixing these. In addition, ultraviolet light, KrF laser light, ArF laser light, or the like can be used. Further, exposure may be performed by an immersion exposure technique. Examples of light used for exposure include extreme ultraviolet light (EUV: Extreme-violet) and X-rays. Further, an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible. Note that a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
薄膜のエッチングには、ドライエッチング法、ウエットエッチング法、サンドブラスト法などを用いることができる。
For etching the thin film, a dry etching method, a wet etching method, a sand blasting method, or the like can be used.
図７に表示装置２００Ｂの断面図を示す。表示装置２００Ｂは、表示用の液晶パネルである液晶パネル８０Ｂと、調光用の液晶パネルである液晶パネル９０Ｂとを有する。表示装置２００Ｂは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 7 shows a cross-sectional view of the display device 200B. The display device 200B includes a liquid crystal panel 80B that is a liquid crystal panel for display and a liquid crystal panel 90B that is a liquid crystal panel for dimming. The display device 200B further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
表示装置２００Ｂは、着色層３９の位置が表示装置２００Ａと異なる。それ以外の構成は、表示装置２００Ａと同様である。
In the display device 200B, the position of the colored layer 39 is different from the display device 200A. Other configurations are the same as those of the display device 200A.
図７は、構成例３（図２（Ａ）に示す表示装置１００Ｃ）に対応する表示装置の具体例といえる。
FIG. 7 can be said to be a specific example of a display device corresponding to the configuration example 3 (the display device 100C shown in FIG. 2A).
表示装置２００Ｂでは、着色層３９が、液晶パネル９０Ｂが有する絶縁層２１８上に設けられている。そのため、バックライトユニット３０からの光は、着色層３９を透過した後に、液晶素子５０及び液晶素子４０に入射される。これにより、特定の波長領域の光のみが、液晶素子５０及び液晶素子４０に入射される。表示装置２００Ｂの輝度を高めるためにバックライトの光量を増やしても、液晶素子に入射される光の量を弱くすることができるため、液晶素子の信頼性の低下を抑制でき、液晶素子を安定に動作させることができる。
In the display device 200B, the colored layer 39 is provided on the insulating layer 218 included in the liquid crystal panel 90B. Therefore, the light from the backlight unit 30 is incident on the liquid crystal element 50 and the liquid crystal element 40 after passing through the colored layer 39. Thereby, only light in a specific wavelength region is incident on the liquid crystal element 50 and the liquid crystal element 40. Even if the amount of light of the backlight is increased in order to increase the luminance of the display device 200B, the amount of light incident on the liquid crystal element can be reduced, so that a decrease in the reliability of the liquid crystal element can be suppressed and the liquid crystal element can be stabilized. Can be operated.
図８に表示装置２００Ｃの断面図を示す。表示装置２００Ｃは、表示用の液晶パネルである液晶パネル８０Ｃと、調光用の液晶パネルである液晶パネル９０Ｃとを有する。表示装置２００Ｃは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 8 shows a cross-sectional view of the display device 200C. The display device 200C includes a liquid crystal panel 80C that is a liquid crystal panel for display and a liquid crystal panel 90C that is a liquid crystal panel for dimming. The display device 200 </ b> C further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
表示装置２００Ｃは、基板１１及び基板２２を有さず、可撓性基板１６、可撓性基板２６、接着層８１ａ、接着層８１ｂ、絶縁層８２ａ、及び絶縁層８２ｂを有する点で、表示装置２００Ａと異なる。それ以外の構成は、表示装置２００Ａと同様である。
The display device 200C does not include the substrate 11 and the substrate 22, but includes the flexible substrate 16, the flexible substrate 26, the adhesive layer 81a, the adhesive layer 81b, the insulating layer 82a, and the insulating layer 82b. Different from 200A. Other configurations are the same as those of the display device 200A.
図８は、構成例５（図４（Ａ）に示す表示装置１００Ｇ）に対応する表示装置の具体例といえる。
FIG. 8 can be said to be a specific example of a display device corresponding to Configuration Example 5 (display device 100G shown in FIG. 4A).
可撓性基板１６及び可撓性基板２６を用いることで、薄型かつ軽量な表示装置を作製することができる。また、液晶素子４０と液晶素子５０との間の距離を短くできるため、視差が生じることを抑制し、表示装置２００Ｃの視野角を広くすることができる。特に、図８では、液晶パネル８０Ｃと液晶パネル９０Ｃの画素数が同じである（１つの液晶素子４０に対して１つの液晶素子５０が設けられている）例を示している。このように、２つの液晶パネルの画素数が近いまたは同じである場合、特に視差が生じやすいため、可撓性基板を用いて、２つの液晶素子間の距離を短くすることは効果的である。
By using the flexible substrate 16 and the flexible substrate 26, a thin and lightweight display device can be manufactured. In addition, since the distance between the liquid crystal element 40 and the liquid crystal element 50 can be shortened, the occurrence of parallax can be suppressed and the viewing angle of the display device 200C can be widened. In particular, FIG. 8 illustrates an example in which the liquid crystal panel 80C and the liquid crystal panel 90C have the same number of pixels (one liquid crystal element 50 is provided for one liquid crystal element 40). Thus, when the number of pixels of the two liquid crystal panels is close or the same, parallax is particularly likely to occur. Therefore, it is effective to shorten the distance between the two liquid crystal elements using a flexible substrate. .
硬質基板上に作製した素子を可撓性基板に転置する方法について説明する。まず、硬質基板上に剥離層を介して、絶縁層８２ａを形成し、さらに、トランジスタ１３ａから配向膜１３３ｃまでの積層構造を形成する。そして、遮光層３８から配向膜１３３ｄまでの積層構造が形成された基板１２と、硬質基板とで、液晶層４２を挟持し、基板１２と硬質基板とを接着層１４１ｂを用いて貼り合わせる。その後、剥離層を用いて硬質基板を剥離し、接着層８１ａを用いて絶縁層８２ａと可撓性基板１６とを貼り合わせる。また、硬質基板上に剥離層を介して、絶縁層８２ｂを形成し、さらに、電極５３及び配向膜１３３ｂを形成する。そして、トランジスタ２３ａから配向膜１３３ａまでの積層構造が形成された基板２１と、硬質基板とで、液晶層５２を挟持し、基板２１と硬質基板とを接着層１４１ａを用いて貼り合わせる。その後、剥離層を用いて硬質基板を剥離し、接着層８１ｂを用いて絶縁層８２ｂと可撓性基板２６とを貼り合わせる。
A method for transferring an element manufactured on a hard substrate to a flexible substrate will be described. First, an insulating layer 82a is formed on a hard substrate with a peeling layer interposed therebetween, and a stacked structure from the transistor 13a to the alignment film 133c is formed. Then, the liquid crystal layer 42 is sandwiched between the substrate 12 on which the laminated structure from the light shielding layer 38 to the alignment film 133d is formed and the hard substrate, and the substrate 12 and the hard substrate are bonded together using the adhesive layer 141b. Thereafter, the hard substrate is peeled off using the peeling layer, and the insulating layer 82a and the flexible substrate 16 are bonded together using the adhesive layer 81a. In addition, the insulating layer 82b is formed on the hard substrate through the peeling layer, and the electrode 53 and the alignment film 133b are further formed. Then, the liquid crystal layer 52 is sandwiched between the substrate 21 on which the stacked structure from the transistor 23a to the alignment film 133a is formed and the hard substrate, and the substrate 21 and the hard substrate are bonded together using the adhesive layer 141a. Thereafter, the hard substrate is peeled off using the peeling layer, and the insulating layer 82b and the flexible substrate 26 are bonded together using the adhesive layer 81b.
図９に表示装置２００Ｄの断面図を示す。表示装置２００Ｄは、表示用の液晶パネルである液晶パネル８０Ｄと、調光用の液晶パネルである液晶パネル９０Ｄとを有する。表示装置２００Ｄは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 9 shows a cross-sectional view of the display device 200D. The display device 200D includes a liquid crystal panel 80D that is a liquid crystal panel for display and a liquid crystal panel 90D that is a liquid crystal panel for dimming. The display device 200D further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
表示装置２００Ｄは、液晶パネル８０Ｄが、液晶パネル８０Ｃの一部（絶縁層８２ａと基板１２の間の要素）の上下を反転した構成である点で、表示装置２００Ｃと異なる。それ以外の構成は、表示装置２００Ｃと同様である。
The display device 200D is different from the display device 200C in that the liquid crystal panel 80D has a configuration in which a part of the liquid crystal panel 80C (an element between the insulating layer 82a and the substrate 12) is turned upside down. Other configurations are the same as those of the display device 200C.
図９に示す表示装置２００Ｄは、構成例５（図４（Ｂ）に示す表示装置１００Ｈ）の変形例ということができる。
The display device 200D illustrated in FIG. 9 can be regarded as a modification of the configuration example 5 (the display device 100H illustrated in FIG. 4B).
表示装置２００Ｄでは、バックライトユニット３０からの光は、着色層３９を透過した後に、液晶素子４０に入射される。これにより、特定の波長領域の光のみが、液晶素子４０に入射される。表示装置２００Ｄの輝度を高めるためにバックライトの光量を増やしても、液晶素子４０に入射される光の量を弱くすることができるため、液晶素子４０の信頼性の低下を抑制でき、液晶素子４０を安定に動作させることができる。
In the display device 200 </ b> D, the light from the backlight unit 30 is incident on the liquid crystal element 40 after passing through the colored layer 39. As a result, only light in a specific wavelength region is incident on the liquid crystal element 40. Even if the amount of light of the backlight is increased in order to increase the luminance of the display device 200D, the amount of light incident on the liquid crystal element 40 can be reduced, so that a decrease in the reliability of the liquid crystal element 40 can be suppressed, and the liquid crystal element 40 can be operated stably.
＜構成例８＞
構成例８では、表示用の液晶パネルに、ＩＰＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いた表示装置について説明する。 <Configuration example 8>
In Configuration Example 8, an active matrix liquid crystal panel to which the IPS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel. The display device will be described.
構成例８では、表示用の液晶パネルに、ＩＰＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いた表示装置について説明する。 <Configuration example 8>
In Configuration Example 8, an active matrix liquid crystal panel to which the IPS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel. The display device will be described.
図１０に、表示装置２００Ｅの断面図を示す。表示装置２００Ｅは、表示用の液晶パネルである液晶パネル８０Ｅと、調光用の液晶パネルである液晶パネル９０Ｅとを有する。表示装置２００Ｅは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 10 shows a cross-sectional view of the display device 200E. The display device 200E includes a liquid crystal panel 80E that is a liquid crystal panel for display and a liquid crystal panel 90E that is a liquid crystal panel for dimming. The display device 200E further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
図１０は、構成例３（図２（Ｂ）に示す表示装置１００Ｄ）に対応する表示装置の具体例といえる。
FIG. 10 can be said to be a specific example of a display device corresponding to Configuration Example 3 (display device 100D shown in FIG. 2B).
まず、液晶パネル９０Ｅの構成について説明する。
First, the configuration of the liquid crystal panel 90E will be described.
液晶パネル９０Ｅは、トランジスタの構造が、液晶パネル９０Ａと異なる。それ以外は、液晶パネル９０Ａと同様の構成を有する。
The liquid crystal panel 90E is different from the liquid crystal panel 90A in the transistor structure. Other than that, it has the same configuration as the liquid crystal panel 90A.
表示部１６２には、トランジスタ２３ｂが設けられている。トランジスタ２３ｂは、ゲート電極として機能する導電層２２１と、ゲート絶縁層として機能する絶縁層２１１と、半導体層２３１と、不純物半導体層２３２と、ソース電極及びドレイン電極として機能する導電層２２２ａ及び導電層２２２ｂと、を有する。トランジスタ２３ｂは、絶縁層２１２に覆われている。トランジスタ２３ｂは、半導体層２３１に、水素化アモルファスシリコンを有する。
The display portion 162 is provided with a transistor 23b. The transistor 23b includes a conductive layer 221 functioning as a gate electrode, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231, an impurity semiconductor layer 232, a conductive layer 222a functioning as a source electrode and a drain electrode, and a conductive layer 222b. The transistor 23b is covered with an insulating layer 212. The transistor 23 b includes hydrogenated amorphous silicon in the semiconductor layer 231.
駆動回路部１６４には、トランジスタ２０１ｃが設けられている。トランジスタ２０１ｃは、トランジスタ２３ｂと同様の構成を有する。
The driver circuit portion 164 is provided with a transistor 201c. The transistor 201c has a structure similar to that of the transistor 23b.
次に、液晶パネル８０Ｅの構成について説明する。
Next, the configuration of the liquid crystal panel 80E will be described.
液晶パネル８０Ｅは、トランジスタの構造及び液晶素子の構造が、液晶パネル８０Ａと異なる。それ以外は、液晶パネル８０Ａと同様の構成を有する。
The liquid crystal panel 80E is different from the liquid crystal panel 80A in the structure of the transistor and the structure of the liquid crystal element. Other than that, it has the same configuration as the liquid crystal panel 80A.
トランジスタ１３ｂ及びトランジスタ２０１ｄは、トランジスタ２３ｂ及びトランジスタ２０１ｃと同様の構成を有する。
The transistor 13b and the transistor 201d have a structure similar to that of the transistor 23b and the transistor 201c.
表示部１６２には、液晶素子４５が設けられている。液晶素子４５は、ＩＰＳモードが適用された液晶素子である。
The display portion 162 is provided with a liquid crystal element 45. The liquid crystal element 45 is a liquid crystal element to which the IPS mode is applied.
液晶素子４５は、電極４６、電極４８、及び液晶層４７を有する。電極４６と電極４８との間に生じる電界により、液晶層４７の配向を制御することができる。液晶層４７は、配向膜１３３ｃと配向膜１３３ｄの間に位置する。配向膜は、液晶層４７の配向を制御することができる。液晶パネル８０Ｅでは、電極４６及び電極４８を覆うように配向膜１３３ｃが設けられ、オーバーコート１２１と液晶層４７との間に配向膜１３３ｄが位置している。
The liquid crystal element 45 includes an electrode 46, an electrode 48, and a liquid crystal layer 47. The alignment of the liquid crystal layer 47 can be controlled by an electric field generated between the electrode 46 and the electrode 48. The liquid crystal layer 47 is located between the alignment film 133c and the alignment film 133d. The alignment film can control the alignment of the liquid crystal layer 47. In the liquid crystal panel 80E, an alignment film 133c is provided so as to cover the electrode 46 and the electrode 48, and the alignment film 133d is located between the overcoat 121 and the liquid crystal layer 47.
電極４６及び電極４８は、例えば、櫛歯状の上面形状（平面形状ともいう）、またはスリットが設けられた上面形状を有する。
The electrode 46 and the electrode 48 have, for example, a comb-like upper surface shape (also referred to as a planar shape) or an upper surface shape provided with a slit.
図１１に、表示装置２００Ｆの断面図を示す。表示装置２００Ｆは、表示用の液晶パネルである液晶パネル８０Ｆと、調光用の液晶パネルである液晶パネル９０Ｆとを有する。表示装置２００Ｆは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 11 is a cross-sectional view of the display device 200F. The display device 200F includes a liquid crystal panel 80F that is a liquid crystal panel for display and a liquid crystal panel 90F that is a liquid crystal panel for light control. The display device 200F further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
表示装置２００Ｆは、着色層３９の位置が表示装置２００Ｅと異なる。さらに、表示装置２００Ｆは、液晶パネル９０Ｆが、液晶パネル９０Ｅの上下を反転した構成である点で、表示装置２００Ｅと異なる。なお、液晶パネル９０Ｆは、基板２２に接して着色層３９及びオーバーコート１２１ａを有する。それ以外の構成は、表示装置２００Ｅと同様である。
In the display device 200F, the position of the colored layer 39 is different from that of the display device 200E. Furthermore, the display device 200F is different from the display device 200E in that the liquid crystal panel 90F has a configuration in which the liquid crystal panel 90E is turned upside down. Note that the liquid crystal panel 90F has a colored layer 39 and an overcoat 121a in contact with the substrate 22. The other configuration is the same as that of the display device 200E.
図１１は、構成例４（図３（Ｂ）に示す表示装置１００Ｆ）に対応する表示装置の具体例といえる。
FIG. 11 can be said to be a specific example of a display device corresponding to Configuration Example 4 (display device 100F shown in FIG. 3B).
表示装置２００Ｆでは、バックライトユニット３０からの光は、着色層３９を透過した後に、液晶素子５０及び液晶素子４５に入射される。これにより、特定の波長領域の光のみが、液晶素子５０及び液晶素子４５に入射される。表示装置の輝度を高めるためにバックライトの光量を増やしても、液晶素子に入射される光の量を弱くすることができるため、液晶素子の信頼性の低下を抑制でき、液晶素子を安定に動作させることができる。
In the display device 200 </ b> F, the light from the backlight unit 30 passes through the colored layer 39 and then enters the liquid crystal element 50 and the liquid crystal element 45. As a result, only light in a specific wavelength region is incident on the liquid crystal element 50 and the liquid crystal element 45. Even if the amount of light from the backlight is increased in order to increase the brightness of the display device, the amount of light incident on the liquid crystal element can be reduced, so that a decrease in the reliability of the liquid crystal element can be suppressed and the liquid crystal element can be stabilized. It can be operated.
＜トランジスタの構成例＞
本実施の形態の表示装置には、様々なトランジスタを適用することができる。図１２（Ａ）、（Ｂ）にトランジスタの構成例を示す。 <Example of transistor structure>
Various transistors can be applied to the display device in this embodiment. 12A and 12B illustrate structural examples of transistors.
本実施の形態の表示装置には、様々なトランジスタを適用することができる。図１２（Ａ）、（Ｂ）にトランジスタの構成例を示す。 <Example of transistor structure>
Various transistors can be applied to the display device in this embodiment. 12A and 12B illustrate structural examples of transistors.
図１２（Ａ）に示すトランジスタは、ゲート電極として機能する導電層２２１と、ゲート絶縁層として機能する絶縁層２１１と、半導体層２３１と、ソース電極及びドレイン電極として機能する導電層２２２ａ及び導電層２２２ｂと、を有する。
A transistor illustrated in FIG. 12A includes a conductive layer 221 functioning as a gate electrode, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231, a conductive layer 222a functioning as a source electrode and a drain electrode, and a conductive layer. 222b.
図１２（Ａ）に示すトランジスタは、半導体層２３１に、低温ポリシリコン（Ｌｏｗ Ｔｅｍｐｅｒａｔｕｒｅ Ｐｏｌｙ−Ｓｉｌｉｃｏｎ、ＬＴＰＳともいう）を有する。
The transistor illustrated in FIG. 12A includes low-temperature polysilicon (also referred to as low temperature poly-silicon or LTPS) in the semiconductor layer 231.
図１２（Ｂ）に示すトランジスタは、第１のゲート電極として機能する導電層２２１と、第１のゲート絶縁層として機能する絶縁層２１１と、半導体層２３１と、ソース電極及びドレイン電極として機能する導電層２２２ａ及び導電層２２２ｂと、第２のゲート電極として機能する導電層２２３と、第２のゲート絶縁層として機能する絶縁層２２５と、を有する。半導体層２３１は、チャネル領域と低抵抗領域とを有する。図１２（Ｂ）に示すトランジスタの半導体層２３１は、金属酸化物を有する。チャネル領域は、絶縁層２２５を介して導電層２２３と重なる。低抵抗領域は、導電層２２２ａと接続される部分、及び、導電層２２２ｂと接続される部分を有する。
The transistor illustrated in FIG. 12B functions as a conductive layer 221 functioning as a first gate electrode, an insulating layer 211 functioning as a first gate insulating layer, a semiconductor layer 231, and a source electrode and a drain electrode. The conductive layer 222a and the conductive layer 222b include a conductive layer 223 that functions as a second gate electrode, and an insulating layer 225 that functions as a second gate insulating layer. The semiconductor layer 231 includes a channel region and a low resistance region. A semiconductor layer 231 of the transistor illustrated in FIG. 12B includes a metal oxide. The channel region overlaps with the conductive layer 223 with the insulating layer 225 provided therebetween. The low resistance region includes a portion connected to the conductive layer 222a and a portion connected to the conductive layer 222b.
図１２（Ｂ）に示すトランジスタは、チャネルの上下にゲートを有する。２つのゲートは、電気的に接続されていることが好ましい。２つのゲートが電気的に接続されている構成のトランジスタは、他のトランジスタと比較して電界効果移動度を高めることが可能であり、オン電流を増大させることができる。その結果、高速動作が可能な回路を作製することができる。さらには回路部の占有面積を縮小することが可能となる。オン電流の大きなトランジスタを適用することで、表示装置を大型化、または高精細化して配線数が増大したとしても、各配線における信号遅延を低減することが可能であり、表示ムラを抑制することが可能である。また、回路部の占有面積を縮小できるため、表示装置の狭額縁化が可能である。また、このような構成を適用することで、信頼性の高いトランジスタを実現することができる。
The transistor illustrated in FIG. 12B has gates above and below a channel. The two gates are preferably electrically connected. A transistor in which two gates are electrically connected can have higher field-effect mobility than another transistor, and can increase on-state current. As a result, a circuit capable of high speed operation can be manufactured. Furthermore, the area occupied by the circuit portion can be reduced. By applying a transistor with a large on-state current, signal delay in each wiring can be reduced and display unevenness can be suppressed even if the number of wirings is increased by increasing the size or definition of the display device. Is possible. In addition, since the area occupied by the circuit portion can be reduced, the display device can be narrowed. In addition, by applying such a structure, a highly reliable transistor can be realized.
導電層２２３上には絶縁層２１２及び絶縁層２１３が設けられており、その上に、導電層２２２ａ及び導電層２２２ｂが設けられている。図１２（Ｂ）に示すトランジスタの構造は、導電層２２１と導電層２２２ａまたは導電層２２２ｂとの物理的な距離を離すことが容易なため、これらの間の寄生容量を低減することが可能である。
An insulating layer 212 and an insulating layer 213 are provided over the conductive layer 223, and a conductive layer 222a and a conductive layer 222b are provided thereover. In the structure of the transistor illustrated in FIG. 12B, the physical distance between the conductive layer 221 and the conductive layer 222a or the conductive layer 222b can be easily separated; thus, parasitic capacitance between them can be reduced. is there.
＜液晶素子の構成例＞
図１等に示す液晶素子４０では、画素電極として機能する電極４１にはスリットまたは開口が設けられていない例を示したが、本発明の一態様はこれに限られない。図１３（Ａ）~（Ｃ）に示すように、画素電極と共通電極との双方にスリット（または開口）が設けられていてもよい。 <Configuration example of liquid crystal element>
In theliquid crystal element 40 illustrated in FIG. 1 and the like, an example in which the electrode 41 functioning as a pixel electrode is not provided with a slit or an opening is described; however, one embodiment of the present invention is not limited thereto. As shown in FIGS. 13A to 13C, slits (or openings) may be provided in both the pixel electrode and the common electrode.
図１等に示す液晶素子４０では、画素電極として機能する電極４１にはスリットまたは開口が設けられていない例を示したが、本発明の一態様はこれに限られない。図１３（Ａ）~（Ｃ）に示すように、画素電極と共通電極との双方にスリット（または開口）が設けられていてもよい。 <Configuration example of liquid crystal element>
In the
例えば、上面から見て、電極４１のスリットの端部と、電極４３の端部が揃っている形状であってもよい。この場合の断面図を図１３（Ａ）に示す。
For example, when viewed from above, the end of the slit of the electrode 41 and the end of the electrode 43 may be aligned. A cross-sectional view in this case is shown in FIG.
または、上面から見て、電極４１と電極４３とが互いに重なる部分を有していてもよい。この場合の断面図を図１３（Ｂ）に示す。
Alternatively, the electrode 41 and the electrode 43 may have a portion where they overlap each other when viewed from above. A cross-sectional view in this case is shown in FIG.
または、上面から見て、電極４１及び電極４３の双方が設けられていない部分を有していてもよい。この場合の断面図を図１３（Ｃ）に示す。
Alternatively, when viewed from the top, the electrode 41 and the electrode 43 may not be provided. A cross-sectional view in this case is shown in FIG.
なお、図１３（Ａ）~（Ｃ）に示す構成例は、ＩＰＳモードの一種と呼ばれることもある。上述の通り、本明細書等では、画素電極と共通電極とが同一平面上に設けられる構成をＩＰＳモードとし、画素電極と共通電極とが絶縁層を介して積層される構成をＦＦＳモードとして説明する。そのため、図１３（Ａ）~（Ｃ）に示す構成例もＦＦＳモードの一種として例示する。
Note that the configuration example illustrated in FIGS. 13A to 13C may be referred to as a kind of IPS mode. As described above, in this specification and the like, a configuration in which the pixel electrode and the common electrode are provided on the same plane is referred to as an IPS mode, and a configuration in which the pixel electrode and the common electrode are stacked via an insulating layer is described as an FFS mode. To do. Therefore, the configuration example shown in FIGS. 13A to 13C is also exemplified as a kind of FFS mode.
また、図１等に示す液晶素子４０では、画素電極として機能する電極４１上に、絶縁層４４を介して、共通電極として機能する電極４３が設けられている例を示したが、本発明の一態様は、これに限られない。図１３（Ｄ）に示すように、共通電極として機能する電極４３上に、絶縁層４４を介して、画素電極として機能する電極４１が設けられていてもよい。図１３（Ｄ）に示すように、電極４３と絶縁層４４の開口を介して、電極４１とトランジスタ１３とは電気的に接続される。
Further, in the liquid crystal element 40 illustrated in FIG. 1 and the like, the example in which the electrode 43 functioning as the common electrode is provided on the electrode 41 functioning as the pixel electrode through the insulating layer 44 is described. One aspect is not limited to this. As shown in FIG. 13D, an electrode 41 functioning as a pixel electrode may be provided over the electrode 43 functioning as a common electrode with an insulating layer 44 interposed therebetween. As shown in FIG. 13D, the electrode 41 and the transistor 13 are electrically connected through the opening of the electrode 43 and the insulating layer 44.
＜構成例９＞
構成例９では、表示用の液晶パネルに、ＦＦＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いたタッチパネルについて説明する。 <Configuration example 9>
In Configuration Example 9, an active matrix liquid crystal panel to which the FFS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel. The touch panel will be described.
構成例９では、表示用の液晶パネルに、ＦＦＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いたタッチパネルについて説明する。 <Configuration example 9>
In Configuration Example 9, an active matrix liquid crystal panel to which the FFS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel. The touch panel will be described.
図１４に、タッチパネル２１０Ａの断面図を示す。タッチパネル２１０Ａは、表示用の液晶パネルである液晶パネル８５Ａと、調光用の液晶パネルである液晶パネル８６Ａとを有する。タッチパネル２１０Ａは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 14 shows a cross-sectional view of the touch panel 210A. The touch panel 210A includes a liquid crystal panel 85A that is a liquid crystal panel for display and a liquid crystal panel 86A that is a liquid crystal panel for dimming. The touch panel 210 </ b> A further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
図１４は、構成例６（図５（Ａ）に示すタッチパネル１１０Ａ）に対応するタッチパネルの具体例といえる。
FIG. 14 can be said to be a specific example of a touch panel corresponding to Configuration Example 6 (touch panel 110A shown in FIG. 5A).
液晶パネル８５Ａは、画像を表示する機能と、タッチセンサとしての機能と、を有する。
The liquid crystal panel 85A has a function of displaying an image and a function as a touch sensor.
液晶パネル８５Ａは、ＦＦＳモードが適用されたアクティブマトリクス型の液晶パネルである。液晶パネル８５Ａは、透過型の液晶パネルである。液晶パネル８５Ａは、表示パネルとして機能する。
The liquid crystal panel 85A is an active matrix liquid crystal panel to which the FFS mode is applied. The liquid crystal panel 85A is a transmissive liquid crystal panel. The liquid crystal panel 85A functions as a display panel.
液晶パネル８５Ａは、基板１１、基板１２、トランジスタ１３ａ、トランジスタ１３ｂ、液晶素子４０ａ、液晶素子４０ｂ、遮光層３８、着色層３９等を有する。
The liquid crystal panel 85A includes a substrate 11, a substrate 12, a transistor 13a, a transistor 13b, a liquid crystal element 40a, a liquid crystal element 40b, a light shielding layer 38, a colored layer 39, and the like.
液晶素子４０ａは、電極４１ａ、液晶層４２、及び電極４３ａを有する。液晶素子４０ｂは、電極４１ｂ、液晶層４２、及び電極４３ｂを有する。
The liquid crystal element 40a includes an electrode 41a, a liquid crystal layer 42, and an electrode 43a. The liquid crystal element 40b includes an electrode 41b, a liquid crystal layer 42, and an electrode 43b.
トランジスタ１３ａのソースまたはドレインは、電極４１ａと電気的に接続されている。トランジスタ１３ｂのソースまたはドレインは、電極４１ｂと電気的に接続されている。電極４１ａ及び電極４１ｂは絶縁層４４に覆われており、絶縁層４４上に電極４３ａ及び電極４３ｂが設けられている。電極４１ａは、絶縁層４４を介して電極４３ａと重なる領域を有する。また、電極４１ａは、電極４３ａと重ならない領域も有する。電極４１ｂは、絶縁層４４を介して電極４３ｂと重なる領域を有する。また、電極４１ｂは、電極４３ｂと重ならない領域も有する。液晶層４２は、配向膜１３３ｃと配向膜１３３ｄとの間に挟持される。電極４３ａと電極４３ｂとは電気的に絶縁されている。
The source or drain of the transistor 13a is electrically connected to the electrode 41a. The source or drain of the transistor 13b is electrically connected to the electrode 41b. The electrode 41 a and the electrode 41 b are covered with an insulating layer 44, and the electrode 43 a and the electrode 43 b are provided on the insulating layer 44. The electrode 41a has a region overlapping with the electrode 43a with the insulating layer 44 interposed therebetween. The electrode 41a also has a region that does not overlap with the electrode 43a. The electrode 41b has a region overlapping with the electrode 43b with the insulating layer 44 interposed therebetween. The electrode 41b also has a region that does not overlap with the electrode 43b. The liquid crystal layer 42 is sandwiched between the alignment film 133c and the alignment film 133d. The electrode 43a and the electrode 43b are electrically insulated.
タッチパネル２１０Ａでは、電極４３ａと電極４３ｂとの間に形成される容量を利用して、被検知体の近接または接触等を検知することができる。すなわちタッチパネル２１０Ａにおいて、電極４３ａ、４３ｂは、液晶素子の共通電極と、検知素子の電極と、の両方を兼ねる。
The touch panel 210A can detect the proximity or contact of the detection target using a capacitance formed between the electrode 43a and the electrode 43b. In other words, in the touch panel 210A, the electrodes 43a and 43b serve as both the common electrode of the liquid crystal element and the electrode of the detection element.
液晶パネル８６Ａは、液晶パネル９０Ａ（図６）と同様の構成を有する。液晶パネル８６Ａが有する液晶素子５０は、液晶パネル８５Ａが有する２以上の液晶素子（図１４では液晶素子４０ａ及び液晶素子４０ｂの２つ）と重ねて配置される。つまり、１つの液晶素子５０を用いて、タッチパネル２１０Ａが有する２以上の副画素の調光を行うことができる。
The liquid crystal panel 86A has the same configuration as the liquid crystal panel 90A (FIG. 6). The liquid crystal element 50 included in the liquid crystal panel 86A is placed so as to overlap with two or more liquid crystal elements included in the liquid crystal panel 85A (two liquid crystal elements 40a and 40b in FIG. 14). That is, dimming of two or more subpixels included in the touch panel 210 </ b> A can be performed using one liquid crystal element 50.
＜構成例１０＞
構成例１０では、表示用の液晶パネルに、ＩＰＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いたタッチパネルについて説明する。 <Configuration Example 10>
In Configuration Example 10, an active matrix liquid crystal panel to which the IPS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel. The touch panel will be described.
構成例１０では、表示用の液晶パネルに、ＩＰＳモードが適用されたアクティブマトリクス型の液晶パネルを用い、調光用の液晶パネルに、ＴＮモードが適用されたアクティブマトリクス型の液晶パネルを用いたタッチパネルについて説明する。 <Configuration Example 10>
In Configuration Example 10, an active matrix liquid crystal panel to which the IPS mode is applied is used as the display liquid crystal panel, and an active matrix liquid crystal panel to which the TN mode is applied is used as the light control liquid crystal panel. The touch panel will be described.
図１５に、タッチパネル２１０Ｂの断面図を示す。タッチパネル２１０Ｂは、表示用の液晶パネルである液晶パネル８５Ｂと、調光用の液晶パネルである液晶パネル８６Ｂとを有する。タッチパネル２１０Ｂは、さらに、バックライトユニット３０、偏光板６１、偏光板６２、及び偏光板６３を有する。
FIG. 15 shows a cross-sectional view of the touch panel 210B. The touch panel 210B includes a liquid crystal panel 85B that is a liquid crystal panel for display and a liquid crystal panel 86B that is a liquid crystal panel for light control. The touch panel 210 </ b> B further includes a backlight unit 30, a polarizing plate 61, a polarizing plate 62, and a polarizing plate 63.
図１５は、構成例６（図５（Ｂ）に示すタッチパネル１１０Ｂ）に対応するタッチパネルの具体例といえる。
FIG. 15 can be said to be a specific example of a touch panel corresponding to Configuration Example 6 (touch panel 110B shown in FIG. 5B).
液晶パネル８５Ｂは、画像を表示する機能と、タッチセンサとしての機能と、を有する。
The liquid crystal panel 85B has a function of displaying an image and a function as a touch sensor.
液晶パネル８５Ｂは、対向基板（基板１２）にのみに、検知素子を構成する電極等を設けた構成である。液晶パネル８５Ｂの構成は、図５に示す液晶パネル１１１Ｂの構成を参照することができる。
The liquid crystal panel 85B has a configuration in which an electrode or the like constituting a detection element is provided only on the counter substrate (substrate 12). For the configuration of the liquid crystal panel 85B, the configuration of the liquid crystal panel 111B illustrated in FIG. 5 can be referred to.
液晶パネル８６Ｂは、図６に示す液晶パネル９０Ａと同様の構成を有する。
The liquid crystal panel 86B has the same configuration as the liquid crystal panel 90A shown in FIG.
液晶パネル８５Ｂと液晶パネル８６Ｂでは、トランジスタの構造及び半導体材料が互いに異なる。例えば、液晶パネルの解像度の違い、液晶素子の違いなどに応じて、パネルそれぞれで、トランジスタの構造、材料などを選択することができる。
The liquid crystal panel 85B and the liquid crystal panel 86B have different transistor structures and semiconductor materials. For example, the structure, material, and the like of a transistor can be selected for each panel according to a difference in resolution of a liquid crystal panel, a difference in liquid crystal element, and the like.
＜表示モジュールの構成例＞
本実施の形態の表示装置を用いて、高解像度で大型の表示モジュールを作製することができる。例えば、８Ｋ４Ｋの表示装置の解像度は水平解像度が７６８０、垂直解像度が４３２０と、極めて高解像度である。また、８Ｋ４Ｋの表示装置に関する国際規格として、Ｒｅｃｏｍｍｅｎｄａｔｉｏｎ ＩＴＵ−Ｒ ＢＴ．２０２０−２がある。この規格において、駆動方法はプログレッシブ方式であり、フレーム周波数は最大１２０Ｈｚとされている。 <Configuration example of display module>
A large display module with high resolution can be manufactured using the display device of this embodiment. For example, the resolution of an 8K4K display device is very high, with a horizontal resolution of 7680 and a vertical resolution of 4320. As an international standard for 8K4K display devices, Recommendation ITU-R BT. 2020-2. In this standard, the driving method is a progressive method, and the maximum frame frequency is 120 Hz.
本実施の形態の表示装置を用いて、高解像度で大型の表示モジュールを作製することができる。例えば、８Ｋ４Ｋの表示装置の解像度は水平解像度が７６８０、垂直解像度が４３２０と、極めて高解像度である。また、８Ｋ４Ｋの表示装置に関する国際規格として、Ｒｅｃｏｍｍｅｎｄａｔｉｏｎ ＩＴＵ−Ｒ ＢＴ．２０２０−２がある。この規格において、駆動方法はプログレッシブ方式であり、フレーム周波数は最大１２０Ｈｚとされている。 <Configuration example of display module>
A large display module with high resolution can be manufactured using the display device of this embodiment. For example, the resolution of an 8K4K display device is very high, with a horizontal resolution of 7680 and a vertical resolution of 4320. As an international standard for 8K4K display devices, Recommendation ITU-R BT. 2020-2. In this standard, the driving method is a progressive method, and the maximum frame frequency is 120 Hz.
高解像度で大型の表示モジュールに、電界効果移動度の低いトランジスタを用いる場合、フレーム期間中に画像の書き換え動作が間に合わず、駆動できないことがある。
When a transistor with low field-effect mobility is used for a large display module with high resolution, the image rewriting operation may not be in time during the frame period, and may not be driven.
このとき、画素領域を複数（例えば４つ）に分断し、それぞれに走査線駆動回路（ゲートドライバともいう）及び信号線駆動回路（ソースドライバともいう）を配置する構成を適用することができる。このような構成は、複数の画素領域で同時に画像を書き換えることで、電界効果移動度の低いトランジスタを適用した場合でも、フレーム期間中の画像の書き換えを実現するものである。
At this time, a structure in which a pixel region is divided into a plurality of (for example, four) pixels and a scan line driver circuit (also referred to as a gate driver) and a signal line driver circuit (also referred to as a source driver) are provided for each pixel region can be used. Such a configuration realizes rewriting of an image during a frame period even when a transistor with low field effect mobility is applied by rewriting the image simultaneously in a plurality of pixel regions.
また、ゲート線１本ずつに選択信号を供給し、画素が１つずつ選択される構成に加えて、２本以上（代表的には２本、３本、または４本）のゲート線に同時に選択信号を供給し、列方向に隣接する２つ以上の画素が同時に選択される構成を適用することができる。同時に選択される２つ以上の画素は、それぞれ異なるソース線と接続される。すなわち列ごとに２本以上のソース線が配列される。このような構成は、画素領域を分割する構成に比べ、低コストであり、好ましい。分割された画素領域間を同期させる回路が不要であること、分割された画素領域の境界部が視認されないこと、入力される画像データを分割するための画像処理が不要であること等からも、画素領域を分割しない構成は好ましい。
In addition to a configuration in which a selection signal is supplied to each gate line and pixels are selected one by one, two or more (typically two, three, or four) gate lines are simultaneously applied. A configuration in which a selection signal is supplied and two or more pixels adjacent in the column direction are simultaneously selected can be applied. Two or more pixels selected at the same time are connected to different source lines. That is, two or more source lines are arranged for each column. Such a configuration is preferable because it is less expensive than a configuration in which the pixel region is divided. From the fact that a circuit that synchronizes the divided pixel areas is unnecessary, the boundary portion of the divided pixel areas is not visually recognized, and the image processing for dividing the input image data is unnecessary. A configuration in which the pixel region is not divided is preferable.
以下では、画素領域を分割しない構成の表示モジュールについて詳述する。図１６（Ａ）、（Ｂ）を用いて、ゲート線１本ずつに選択信号を供給し、画素が１つずつ選択される構成の表示モジュールについて説明する。図１７（Ａ）、（Ｂ）を用いて、ゲート線２本ずつに選択信号を供給し、画素が２つずつ選択される構成の表示モジュールについて説明する。
Hereinafter, a display module having a configuration in which the pixel region is not divided will be described in detail. A display module having a structure in which a selection signal is supplied to each gate line and pixels are selected one by one will be described with reference to FIGS. A display module having a structure in which a selection signal is supplied to each of two gate lines and two pixels are selected will be described with reference to FIGS.
図１６（Ａ）は、表示モジュールの構成を示すブロック図である。当該構成では、ゲート線１本ずつに選択信号が供給され、画素が１つずつ選択される。ゲートドライバＧＤ及びソースドライバＳＤはともに外付けとすることができる。また、ゲートドライバＧＤ及びソースドライバＳＤのうち一方又は双方は、表示装置に内蔵されていてもよい。ゲート線には、２つのゲートドライバＧＤから同じ信号が供給される。ソース線には、１つのソースドライバＳＤから信号が供給される。画素領域（Ｐｉｘｅｌ Ａｒｅａ）は分割されていない。
FIG. 16A is a block diagram illustrating a structure of a display module. In this configuration, a selection signal is supplied to each gate line, and pixels are selected one by one. Both the gate driver GD and the source driver SD can be externally attached. One or both of the gate driver GD and the source driver SD may be built in the display device. The same signal is supplied to the gate line from the two gate drivers GD. A signal is supplied from one source driver SD to the source line. The pixel area (Pixel Area) is not divided.
図１６（Ｂ）に、画素ＰＩＸ（ｉ，ｊ）の回路図を示す。画素ＰＩＸ（ｉ，ｊ）は、トランジスタＭ１、容量素子Ｃ１、及び液晶素子ＬＣを有する。トランジスタＭ１のゲートは、ゲート線ＧＬ（ｉ）と接続されている。トランジスタＭ１のソース及びドレインのうち一方は、ソース線ＳＬ（ｊ）と接続され、他方は、容量素子Ｃ１の一方の電極、及び液晶素子ＬＣの一方の電極と接続されている。容量素子Ｃ１の他方の電極は、配線ＣＳＣＯＭと接続されている。液晶素子ＬＣの他方の電極は、配線ＴＣＯＭと接続されている。
FIG. 16B shows a circuit diagram of the pixel PIX (i, j). The pixel PIX (i, j) includes a transistor M1, a capacitor C1, and a liquid crystal element LC. The gate of the transistor M1 is connected to the gate line GL (i). One of the source and the drain of the transistor M1 is connected to the source line SL (j), and the other is connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element LC. The other electrode of the capacitive element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element LC is connected to the wiring TCOM.
図１７（Ａ）は、表示モジュールの構成を示すブロック図である。当該構成では、２本のゲート線に同時に選択信号が供給され、列方向に隣接する画素が２つ同時に選択される。ゲートドライバＧＤ及びソースドライバＳＤはともに外付けとすることができる。また、ゲートドライバＧＤ及びソースドライバＳＤのうち一方又は双方は、表示装置に内蔵されていてもよい。ゲート線には、２つのゲートドライバＧＤから同じ信号が供給される。ゲート線ＧＬ０（ｉ）は、ゲート線ＧＬ（ｉ）及びゲート線ＧＬ（ｉ＋１）と電気的に接続されており、ｉ行目と（ｉ＋１）行目は２行同時に駆動する。ソース線には、１つのソースドライバＳＤから信号が供給される。画素領域は分割されていない。
FIG. 17A is a block diagram illustrating a structure of a display module. In this configuration, selection signals are simultaneously supplied to two gate lines, and two adjacent pixels in the column direction are simultaneously selected. Both the gate driver GD and the source driver SD can be externally attached. One or both of the gate driver GD and the source driver SD may be built in the display device. The same signal is supplied to the gate line from the two gate drivers GD. The gate line GL 0 (i) is electrically connected to the gate line GL (i) and the gate line GL (i + 1), and the i-th and (i + 1) -th rows are driven simultaneously. A signal is supplied from one source driver SD to the source line. The pixel area is not divided.
図１７（Ｂ）に、画素ＰＩＸ（ｉ，ｊ）及び画素ＰＩＸ（ｉ＋１，ｊ）の回路図を示す。
FIG. 17B is a circuit diagram of the pixel PIX (i, j) and the pixel PIX (i + 1, j).
まず、画素ＰＩＸ（ｉ，ｊ）の構成について説明する。画素ＰＩＸ（ｉ，ｊ）は、トランジスタＭ１、容量素子Ｃ１、及び液晶素子ＬＣを有する。トランジスタＭ１のゲートは、ゲート線ＧＬ（ｉ）と接続されている。トランジスタＭ１のソース及びドレインのうち一方は、ソース線ＳＬ１（ｊ）と接続され、他方は、容量素子Ｃ１の一方の電極、及び液晶素子ＬＣの一方の電極と接続されている。容量素子Ｃ１の他方の電極は、配線ＣＳＣＯＭと接続されている。液晶素子ＬＣの他方の電極は、配線ＴＣＯＭと接続されている。
First, the configuration of the pixel PIX (i, j) will be described. The pixel PIX (i, j) includes a transistor M1, a capacitor C1, and a liquid crystal element LC. The gate of the transistor M1 is connected to the gate line GL (i). One of the source and the drain of the transistor M1 is connected to the source line SL 1 (j), and the other is connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element LC. The other electrode of the capacitive element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element LC is connected to the wiring TCOM.
次に、画素ＰＩＸ（ｉ＋１，ｊ）の構成について説明する。画素ＰＩＸ（ｉ＋１，ｊ）は、トランジスタＭ２、容量素子Ｃ２、及び液晶素子ＬＣを有する。トランジスタＭ２のゲートは、ゲート線ＧＬ（ｉ＋１）と接続されている。トランジスタＭ２のソース及びドレインのうち一方は、ソース線ＳＬ２（ｊ）と接続され、他方は、容量素子Ｃ２の一方の電極、及び液晶素子ＬＣの一方の電極と接続されている。容量素子Ｃ２の他方の電極は、配線ＣＳＣＯＭと接続されている。液晶素子ＬＣの他方の電極は、配線ＴＣＯＭと接続されている。
Next, the configuration of the pixel PIX (i + 1, j) will be described. The pixel PIX (i + 1, j) includes a transistor M2, a capacitor element C2, and a liquid crystal element LC. The gate of the transistor M2 is connected to the gate line GL (i + 1). One of the source and the drain of the transistor M2 is connected to the source line SL 2 (j), and the other is connected to one electrode of the capacitor C2 and one electrode of the liquid crystal element LC. The other electrode of the capacitive element C2 is connected to the wiring CSCOM. The other electrode of the liquid crystal element LC is connected to the wiring TCOM.
以上のように、本実施の形態では、調光用の液晶パネルと表示用の液晶パネルを用い、２つの液晶パネルそれぞれに適した液晶素子及びトランジスタを適用することで、コントラスト、視野角特性、及び信頼性がそれぞれ高い表示装置を実現することができる。
As described above, in this embodiment, a liquid crystal panel for light control and a liquid crystal panel for display are used, and by applying liquid crystal elements and transistors suitable for the two liquid crystal panels, contrast, viewing angle characteristics, In addition, a display device with high reliability can be realized.
本実施の形態は、他の実施の形態と適宜組み合わせることができる。また、本明細書において、１つの実施の形態の中に、複数の構成例が示される場合は、構成例を適宜組み合わせることが可能である。
This embodiment can be combined with any of the other embodiments as appropriate. In this specification, in the case where a plurality of structure examples are given in one embodiment, any of the structure examples can be combined as appropriate.
（実施の形態２）
本実施の形態では、本発明の一態様の液晶パネルについて図１８を用いて説明する。 (Embodiment 2)
In this embodiment, a liquid crystal panel of one embodiment of the present invention will be described with reference to FIGS.
本実施の形態では、本発明の一態様の液晶パネルについて図１８を用いて説明する。 (Embodiment 2)
In this embodiment, a liquid crystal panel of one embodiment of the present invention will be described with reference to FIGS.
表示パネルにおいて、色深度が大きいほど、表現可能な色が多くなり、好ましい。例えば、ＲＧＢそれぞれの輝度を８ビットで表す場合、各色は２５６階調の輝度で表現される。そして、ＲＧＢそれぞれの輝度を１２ビットで表す場合、各色は４０９６階調の輝度で表現される。
In the display panel, the larger the color depth, the more colors that can be expressed, which is preferable. For example, when each luminance of RGB is represented by 8 bits, each color is represented by a luminance of 256 gradations. When the luminance of each RGB is expressed by 12 bits, each color is expressed by a luminance of 4096 gradations.
液晶素子の明るさは、液晶素子にかかる電圧に応じて変化する。そのため、フレーム期間中の電圧の変動が、透過率の変動となって現れる。図１８（Ａ）に液晶素子のＶ−Ｔ特性（電圧−透過率特性）の例を示す。図１８（Ａ）の縦軸は規格化透過率を示す。８ビットの場合、黒から白までの透過率を２５６階調に分割する。それに対して、１２ビットの場合は、４０９６階調に分割する。そのため、電圧が同じ値だけ変化する際、１２ビットの場合は、８ビットの約１６倍の階調変化が生じることとなる。階調ズレを抑制するためには、電圧の変化を抑制することが重要である。電圧の変化を抑制する方法として、例えば、トランジスタの半導体層に酸化物半導体を用いることが挙げられる。酸化物半導体を用いたトランジスタは、シリコンなどを用いたトランジスタよりも、非導通状態時のリーク電流（オフ電流）を極めて低くすることができる。また、電圧の変化を抑制する方法として、液晶材料の抵抗率を高くすることが挙げられる。液晶材料の固有抵抗率は、１．０×１０１４Ω・ｃｍ以上が好ましく、１．０×１０１５Ω・ｃｍ以上がより好ましい。
The brightness of the liquid crystal element changes according to the voltage applied to the liquid crystal element. Therefore, voltage fluctuations during the frame period appear as fluctuations in transmittance. FIG. 18A shows an example of VT characteristics (voltage-transmittance characteristics) of a liquid crystal element. The vertical axis | shaft of FIG. 18 (A) shows the normalized transmittance | permeability. In the case of 8 bits, the transmittance from black to white is divided into 256 gradations. On the other hand, in the case of 12 bits, it is divided into 4096 gradations. Therefore, when the voltage changes by the same value, in the case of 12 bits, a gradation change of about 16 times that of 8 bits occurs. In order to suppress the gradation shift, it is important to suppress the change in voltage. As a method for suppressing a change in voltage, for example, an oxide semiconductor is used for a semiconductor layer of a transistor. A transistor using an oxide semiconductor can have a much lower leakage current (off-state current) in a non-conduction state than a transistor using silicon or the like. Further, as a method for suppressing a change in voltage, increasing the resistivity of the liquid crystal material can be given. The specific resistivity of the liquid crystal material is preferably 1.0 × 10 14 Ω · cm or more, and more preferably 1.0 × 10 15 Ω · cm or more.
また、電圧が変化しても階調ズレを生じにくくさせる方法として、電圧の変化量ΔＶあたりの透過率の変化量ΔＴを小さくすることが挙げられる。つまり、液晶素子におけるＶ−Ｔ特性の傾きを小さくすることが好ましい。本実施の形態では、配向膜のラビング角度を制御することで、Ｖ−Ｔ特性の傾きを小さくする。
Further, as a method for making it difficult to cause gradation shift even when the voltage changes, it is possible to reduce the transmittance change amount ΔT per voltage change amount ΔV. That is, it is preferable to reduce the inclination of the VT characteristic in the liquid crystal element. In this embodiment, the inclination of the VT characteristic is reduced by controlling the rubbing angle of the alignment film.
以下では、横電界方式の液晶素子について説明する。図１８（Ｂ１）、（Ｂ２）、（Ｂ３）、（Ｃ１）、（Ｃ２）、（Ｃ３）は、それぞれ液晶素子が有する電極を上から見た模式図である。さらに、これらの図それぞれにおいて、電極上に位置する液晶分子４２ｍを示す。
Hereinafter, a horizontal electric field liquid crystal element will be described. 18B1, (B2), (B3), (C1), (C2), and (C3) are schematic views of the electrodes of the liquid crystal element as viewed from above. Furthermore, in each of these figures, liquid crystal molecules 42m located on the electrodes are shown.
図１８（Ｂ１）、（Ｂ２）、（Ｃ１）、（Ｃ２）に示す電極４１及び電極４３は、ＩＰＳモードの液晶素子が有する画素電極及び共通電極とみなすことができる。以下では、ＩＰＳモードの液晶素子を例に挙げて説明するが、図１８（Ｂ３）、（Ｃ３）に示すように、電極４３を電極４１に置き換えることで、ＦＦＳモードの液晶素子に適用することができる。図１８（Ｂ３）、（Ｃ３）に示す電極４１は、ＦＦＳモードの液晶素子が有する画素電極をみなすことができ、距離Ｓは、電極４１のスリット幅とみなすことができる。ＦＦＳモードの液晶素子が有する共通電極は、絶縁層を介して画素電極と重なる位置に設けられる。
The electrode 41 and the electrode 43 illustrated in FIGS. 18B1, (B2), (C1), and (C2) can be regarded as a pixel electrode and a common electrode included in an IPS mode liquid crystal element. Hereinafter, an IPS mode liquid crystal element will be described as an example. However, as shown in FIGS. 18B3 and 18C3, the electrode 43 may be replaced with an electrode 41 to be applied to an FFS mode liquid crystal element. Can do. 18B3 and 18C can be regarded as a pixel electrode included in an FFS mode liquid crystal element, and the distance S can be regarded as a slit width of the electrode 41. The common electrode included in the FFS mode liquid crystal element is provided at a position overlapping the pixel electrode with the insulating layer interposed therebetween.
まず、液晶材料がポジ型である（誘電異方性が正である）場合について、図１８（Ｂ１）、（Ｂ２）を用いて説明する。
First, the case where the liquid crystal material is positive (dielectric anisotropy is positive) will be described with reference to FIGS. 18B1 and 18B2.
図１８（Ｂ１）に、電圧がＯＦＦのときの液晶分子４２ｍの向きを示す。図１８（Ｂ２）に、電圧がＯＮのときの液晶分子４２ｍの向きと電界の方向を示す。
FIG. 18B1 shows the direction of the liquid crystal molecules 42m when the voltage is OFF. FIG. 18B2 shows the direction of the liquid crystal molecules 42m and the direction of the electric field when the voltage is ON.
図１８（Ｂ１）に示す角度θｐは、電界の方向と、電圧がＯＦＦのときの液晶分子４２ｍの長軸の向きと、がなす角度といえる。ここで、電圧がＯＦＦのときの液晶分子４２ｍの長軸の向きは、配向膜のラビング方向と概略等しくなる。つまり、角度θｐは、配向膜のラビング方向と電界の方向とがなす角度と言い換えることができる。
Angle theta p shown in FIG. 18 (B1) is said the direction of the electric field, the orientation of the long axis of the liquid crystal molecules 42m when the voltage OFF, the the angle formed. Here, the direction of the major axis of the liquid crystal molecules 42m when the voltage is OFF is substantially equal to the rubbing direction of the alignment film. In other words, the angle theta p may be referred to as the rubbing direction and the angle formed by the direction of the electric field of the alignment film.
液晶分子４２ｍの長軸が電界方向に対して垂直な場合（角度θｐ＝９０°）、Ｆｒｅｅｄｅｒｉｃｋｓｚ転移が存在するため、液晶素子は明確なしきい値電圧をもつ。一方、角度θｐが小さくなるほど、転移が不明瞭となり、透過率は電圧に対して緩やかに変化する。角度θｐを小さくすることで、Ｖ−Ｔ特性の傾きを小さくすることができる。また、角度θｐを小さくすることで、応答速度を速くすることができる。一方で、角度θｐが小さすぎると、最大透過率が小さくなってしまう。
When the major axis of the liquid crystal molecules 42m is perpendicular to the electric field direction (angle θ p = 90 °), the Freedericksz transition exists, so that the liquid crystal element has a clear threshold voltage. On the other hand, as the angle theta p decreases, metastasis is unclear, the transmittance gently changes with respect to voltage. By reducing the angle theta p, it is possible to reduce the inclination of the V-T characteristic. Further, by decreasing the angle theta p, it is possible to increase the response speed. On the other hand, if the angle theta p is too small, the maximum transmittance is reduced.
角度θｐは、５０°より大きく８０°未満が好ましく、６０°以上８０°未満がより好ましく、６０°以上７０°以下がさらに好ましい。このような範囲とすることで、Ｖ−Ｔ特性の傾きを小さくすることができ、かつ、高い最大透過率を維持することができる。また、応答速度を速くすることができる。これにより、８ビット以上、さらには１２ビット以上の色深度の表示パネルにおいて、電圧変化が生じても透過率変動を小さくでき、階調ズレを抑制することができる。
Angle theta p is preferably less than 80 ° greater than 50 °, more preferably less than 60 ° or 80 °, more preferably 60 ° to 70 ° or less. By setting it as such a range, the inclination of VT characteristic can be made small and a high maximum transmittance can be maintained. In addition, the response speed can be increased. As a result, in a display panel having a color depth of 8 bits or more, or even 12 bits or more, the transmittance variation can be reduced even when a voltage change occurs, and gradation shift can be suppressed.
次に、液晶材料がネガ型である（誘電異方性が負である）場合について、図１８（Ｃ１）、（Ｃ２）を用いて説明する。
Next, the case where the liquid crystal material is a negative type (dielectric anisotropy is negative) will be described with reference to FIGS. 18C1 and 18C2.
図１８（Ｃ１）に、電圧がＯＦＦのときの液晶分子４２ｍの向きを示す。図１８（Ｃ２）に、電圧がＯＮのときの液晶分子４２ｍの向きと電界の方向を示す。
FIG. 18C1 shows the direction of the liquid crystal molecules 42m when the voltage is OFF. FIG. 18C2 shows the direction of the liquid crystal molecules 42m and the direction of the electric field when the voltage is ON.
図１８（Ｃ１）に示す角度θｎは、電界の方向と、電圧がＯＦＦのときの液晶分子４２ｍの長軸の向きと、がなす角度といえる。ここで、電圧がＯＦＦのときの液晶分子４２ｍの長軸の向きは、配向膜のラビング方向と概略等しくなる。つまり、角度θｎは、配向膜のラビング方向と電界の方向とがなす角度と言い換えることができる。
The angle θ n shown in FIG. 18C1 can be said to be an angle formed by the direction of the electric field and the direction of the major axis of the liquid crystal molecules 42m when the voltage is OFF. Here, the direction of the major axis of the liquid crystal molecules 42m when the voltage is OFF is substantially equal to the rubbing direction of the alignment film. That is, the angle θ n can be rephrased as an angle formed by the rubbing direction of the alignment film and the electric field direction.
液晶分子４２ｍの長軸が電界方向に対して平行な場合（角度θｎ＝０°）、Ｆｒｅｅｄｅｒｉｃｋｓｚ転移が存在するため、液晶素子は明確なしきい値電圧をもつ。一方、角度θｎが大きくなるほど、転移が不明瞭となり、透過率は電圧に対して緩やかに変化する。角度θｎを大きくすることで、Ｖ−Ｔ特性の傾きを小さくすることができる。また、角度θｎを大きくすることで、応答速度を速くすることができる。一方で、角度θｎが大きすぎると、最大透過率が小さくなってしまう。
When the major axis of the liquid crystal molecules 42m is parallel to the electric field direction (angle θ n = 0 °), the Freedericksz transition exists, so that the liquid crystal element has a clear threshold voltage. On the other hand, as the angle θ n increases, the transition becomes unclear and the transmittance changes gradually with respect to the voltage. By increasing the angle theta n, you are possible to reduce the inclination of the V-T characteristic. Moreover, the response speed can be increased by increasing the angle θ n . On the other hand, if the angle θ n is too large, the maximum transmittance is reduced.
角度θｎは、１０°より大きく４０°未満が好ましく、２０°以上４０°未満がより好ましく、２０°以上３０°以下がさらに好ましい。このような範囲とすることで、Ｖ−Ｔ特性の傾きを小さくすることができ、かつ、高い最大透過率を維持することができる。また、応答速度を速くすることができる。これにより、８ビット以上、さらには１２ビット以上の色深度の表示パネルにおいて、電圧変化が生じても透過率変動を小さくでき、階調ズレを抑制することができる。
The angle θ n is preferably greater than 10 ° and less than 40 °, more preferably 20 ° or more and less than 40 °, and still more preferably 20 ° or more and 30 ° or less. By setting it as such a range, the inclination of VT characteristic can be made small and a high maximum transmittance can be maintained. In addition, the response speed can be increased. As a result, in a display panel having a color depth of 8 bits or more, or even 12 bits or more, the transmittance variation can be reduced even when a voltage change occurs, and gradation shift can be suppressed.
以上のように、液晶パネルにおいて、配向膜のラビング方向と電界の方向とがなす角度を制御することで、電圧変化が生じても階調ズレを生じにくくすることができる。
As described above, in the liquid crystal panel, by controlling the angle formed by the rubbing direction of the alignment film and the direction of the electric field, it is possible to make it difficult to cause a gradation shift even if a voltage change occurs.
当該構成は、実施の形態１で例示した表示パネルとして機能する各液晶パネル（液晶パネル１０Ａ~１０Ｈ、１１１Ａ、１１１Ｂなど）に適用することができる。
This structure can be applied to each liquid crystal panel (liquid crystal panels 10A to 10H, 111A, 111B, etc.) functioning as the display panel exemplified in Embodiment 1.
本実施の形態は、他の実施の形態と適宜組み合わせることができる。
This embodiment can be combined with any of the other embodiments as appropriate.
（実施の形態３）
本実施の形態では、本発明の一態様で開示されるトランジスタの半導体層に用いることができる金属酸化物について説明する。なお、トランジスタの半導体層に金属酸化物を用いる場合、当該金属酸化物を酸化物半導体と読み替えてもよい。 (Embodiment 3)
In this embodiment, a metal oxide that can be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention will be described. Note that in the case where a metal oxide is used for the semiconductor layer of the transistor, the metal oxide may be read as an oxide semiconductor.
本実施の形態では、本発明の一態様で開示されるトランジスタの半導体層に用いることができる金属酸化物について説明する。なお、トランジスタの半導体層に金属酸化物を用いる場合、当該金属酸化物を酸化物半導体と読み替えてもよい。 (Embodiment 3)
In this embodiment, a metal oxide that can be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention will be described. Note that in the case where a metal oxide is used for the semiconductor layer of the transistor, the metal oxide may be read as an oxide semiconductor.
酸化物半導体は、単結晶酸化物半導体と、非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、ＣＡＡＣ−ＯＳ（ｃ−ａｘｉｓ−ａｌｉｇｎｅｄ ｃｒｙｓｔａｌｌｉｎｅ ｏｘｉｄｅ ｓｅｍｉｃｏｎｄｕｃｔｏｒ）、多結晶酸化物半導体、ｎｃ−ＯＳ（ｎａｎｏｃｒｙｓｔａｌｌｉｎｅ ｏｘｉｄｅ ｓｅｍｉｃｏｎｄｕｃｔｏｒ）、擬似非晶質酸化物半導体（ａ−ｌｉｋｅ ＯＳ：ａｍｏｒｐｈｏｕｓ−ｌｉｋｅ ｏｘｉｄｅ ｓｅｍｉｃｏｎｄｕｃｔｏｒ）、及び非晶質酸化物半導体などがある。
An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor. As the non-single-crystal oxide semiconductor, a CAAC-OS (c-axis-aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, an nc-OS (nanocrystalline oxide semiconductor), a pseudo-amorphous oxide semiconductor (a-like oxide OS) : Amorphous-like oxide semiconductor) and amorphous oxide semiconductor.
また、本発明の一態様で開示されるトランジスタの半導体層には、ＣＡＣ−ＯＳ（Ｃｌｏｕｄ−Ａｌｉｇｎｅｄ Ｃｏｍｐｏｓｉｔｅ ｏｘｉｄｅ ｓｅｍｉｃｏｎｄｕｃｔｏｒ）を用いてもよい。
Alternatively, a CAC-OS (Cloud-Aligned Composite Oxide Semiconductor) may be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention.
なお、本発明の一態様で開示されるトランジスタの半導体層は、上述した非単結晶酸化物半導体またはＣＡＣ−ＯＳを好適に用いることができる。また、非単結晶酸化物半導体としては、ｎｃ−ＯＳまたはＣＡＡＣ−ＯＳを好適に用いることができる。
Note that the above-described non-single-crystal oxide semiconductor or CAC-OS can be preferably used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention. As the non-single-crystal oxide semiconductor, nc-OS or CAAC-OS can be preferably used.
なお、本発明の一態様では、トランジスタの半導体層として、ＣＡＣ−ＯＳを用いると好ましい。ＣＡＣ−ＯＳを用いることで、トランジスタに高い電気特性または高い信頼性を付与することができる。
Note that in one embodiment of the present invention, a CAC-OS is preferably used as the semiconductor layer of the transistor. With the use of the CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.
以下では、ＣＡＣ−ＯＳの詳細について説明する。
Details of the CAC-OS will be described below.
ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅは、材料の一部では導電性の機能と、材料の一部では絶縁性の機能とを有し、材料の全体では半導体としての機能を有する。なお、ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅを、トランジスタのチャネル形成領域に用いる場合、導電性の機能は、キャリアとなる電子（またはホール）を流す機能であり、絶縁性の機能は、キャリアとなる電子を流さない機能である。導電性の機能と、絶縁性の機能とを、それぞれ相補的に作用させることで、スイッチングさせる機能（Ｏｎ／Ｏｆｆさせる機能）をＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅに付与することができる。ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅにおいて、それぞれの機能を分離させることで、双方の機能を最大限に高めることができる。
The CAC-OS or the CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. Note that in the case where a CAC-OS or a CAC-metal oxide is used for a channel formation region of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is a carrier. This function prevents electrons from flowing. A function of switching (a function of turning on / off) can be imparted to CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.
また、ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅは、導電性領域、及び絶縁性領域を有する。導電性領域は、上述の導電性の機能を有し、絶縁性領域は、上述の絶縁性の機能を有する。また、材料中において、導電性領域と、絶縁性領域とは、ナノ粒子レベルで分離している場合がある。また、導電性領域と、絶縁性領域とは、それぞれ材料中に偏在する場合がある。また、導電性領域は、周辺がぼけてクラウド状に連結して観察される場合がある。
In addition, the CAC-OS or the CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material, respectively. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.
また、ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅにおいて、導電性領域と、絶縁性領域とは、それぞれ０．５ｎｍ以上１０ｎｍ以下、好ましくは０．５ｎｍ以上３ｎｍ以下のサイズで材料中に分散している場合がある。
In CAC-OS or CAC-metal oxide, the conductive region and the insulating region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.
また、ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅは、異なるバンドギャップを有する成分により構成される。例えば、ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅは、絶縁性領域に起因するワイドギャップを有する成分と、導電性領域に起因するナローギャップを有する成分と、により構成される。当該構成の場合、キャリアを流す際に、ナローギャップを有する成分において、主にキャリアが流れる。また、ナローギャップを有する成分が、ワイドギャップを有する成分に相補的に作用し、ナローギャップを有する成分に連動してワイドギャップを有する成分にもキャリアが流れる。このため、上記ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅをトランジスタのチャネル形成領域に用いる場合、トランジスタのオン状態において高い電流駆動力、つまり大きなオン電流、及び高い電界効果移動度を得ることができる。
Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region. In the case of the configuration, when the carrier flows, the carrier mainly flows in the component having the narrow gap. In addition, the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel formation region of a transistor, high current driving force, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.
すなわち、ＣＡＣ−ＯＳまたはＣＡＣ−ｍｅｔａｌ ｏｘｉｄｅは、マトリックス複合材（ｍａｔｒｉｘ ｃｏｍｐｏｓｉｔｅ）または金属マトリックス複合材（ｍｅｔａｌ ｍａｔｒｉｘ ｃｏｍｐｏｓｉｔｅ）と呼称することもできる。
That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (metal matrix composite) or a metal matrix composite (metal matrix composite).
ＣＡＣ−ＯＳは、例えば、金属酸化物を構成する元素が、０．５ｎｍ以上１０ｎｍ以下、好ましくは、１ｎｍ以上２ｎｍ以下またはその近傍のサイズで偏在した材料の一構成である。なお、以下では、金属酸化物において、一つあるいはそれ以上の金属元素が偏在し、該金属元素を有する領域が、０．５ｎｍ以上１０ｎｍ以下、好ましくは、１ｎｍ以上２ｎｍ以下またはその近傍のサイズで混合した状態をモザイク状またはパッチ状ともいう。
The CAC-OS is one structure of a material in which an element constituting a metal oxide is unevenly distributed with a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or near. In the following, in a metal oxide, one or more metal elements are unevenly distributed, and a region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm or near. The mixed state is also called mosaic or patch.
なお、金属酸化物は、少なくともインジウムを含むことが好ましい。特にインジウム及び亜鉛を含むことが好ましい。また、それらに加えて、アルミニウム、ガリウム、イットリウム、銅、バナジウム、ベリリウム、ホウ素、シリコン、チタン、鉄、ニッケル、ゲルマニウム、ジルコニウム、モリブデン、ランタン、セリウム、ネオジム、ハフニウム、タンタル、タングステン、またはマグネシウムなどから選ばれた一種または複数種が含まれていてもよい。
Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind or plural kinds selected from may be included.
例えば、Ｉｎ−Ｇａ−Ｚｎ酸化物におけるＣＡＣ−ＯＳ（ＣＡＣ−ＯＳの中でもＩｎ−Ｇａ−Ｚｎ酸化物を、特にＣＡＣ−ＩＧＺＯと呼称してもよい。）とは、インジウム酸化物（以下、ＩｎＯＸ１（Ｘ１は０よりも大きい実数）とする。）、またはインジウム亜鉛酸化物（以下、ＩｎＸ２ＺｎＹ２ＯＺ２（Ｘ２、Ｙ２、及びＺ２は０よりも大きい実数）とする。）と、ガリウム酸化物（以下、ＧａＯＸ３（Ｘ３は０よりも大きい実数）とする。）、またはガリウム亜鉛酸化物（以下、ＧａＸ４ＺｎＹ４ＯＺ４（Ｘ４、Ｙ４、及びＺ４は０よりも大きい実数）とする。）などと、に材料が分離することでモザイク状となり、モザイク状のＩｎＯＸ１、またはＩｎＸ２ＺｎＹ２ＯＺ２が、膜中に均一に分布した構成（以下、クラウド状ともいう。）である。
For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). X1 (X1 is greater real than 0) and.), or indium zinc oxide (hereinafter, in X2 Zn Y2 O Z2 ( X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic InO X1 or in X2 Zn Y2 O Z2, is a configuration in which uniformly distributed in the film (hereinafter, click Also called Udo-like.) A.
つまり、ＣＡＣ−ＯＳは、ＧａＯＸ３が主成分である領域と、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域とが、混合している構成を有する複合金属酸化物である。なお、本明細書において、例えば、第１の領域の元素Ｍに対するＩｎの原子数比が、第２の領域の元素Ｍに対するＩｎの原子数比よりも大きいことを、第１の領域は、第２の領域と比較して、Ｉｎの濃度が高いとする。
That, CAC-OS includes a region GaO X3 is the main component, and In X2 Zn Y2 O Z2, or InO X1 is the main component region is a composite metal oxide having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.
なお、ＩＧＺＯは通称であり、Ｉｎ、Ｇａ、Ｚｎ、及びＯによる１つの化合物をいう場合がある。代表例として、ＩｎＧａＯ３（ＺｎＯ）ｍ１（ｍ１は自然数）、またはＩｎ（１＋ｘ０）Ｇａ（１−ｘ０）Ｏ３（ＺｎＯ）ｍ０（−１≦ｘ０≦１、ｍ０は任意数）で表される結晶性の化合物が挙げられる。
Note that IGZO is a common name and sometimes refers to one compound of In, Ga, Zn, and O. As a typical example, InGaO 3 (ZnO) m1 (m1 is a natural number) or In (1 + x0) Ga (1-x0) O 3 (ZnO) m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.
上記結晶性の化合物は、単結晶構造、多結晶構造、またはＣＡＡＣ（ｃ−ａｘｉｓ ａｌｉｇｎｅｄ ｃｒｙｓｔａｌ）構造を有する。なお、ＣＡＡＣ構造とは、複数のＩＧＺＯのナノ結晶がｃ軸配向を有し、かつａ−ｂ面においては配向せずに連結した結晶構造である。
The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystal) structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.
一方、ＣＡＣ−ＯＳは、金属酸化物の材料構成に関する。ＣＡＣ−ＯＳとは、Ｉｎ、Ｇａ、Ｚｎ、及びＯを含む材料構成において、一部にＧａを主成分とするナノ粒子状に観察される領域と、一部にＩｎを主成分とするナノ粒子状に観察される領域とが、それぞれモザイク状にランダムに分散している構成をいう。従って、ＣＡＣ−ＯＳにおいて、結晶構造は副次的な要素である。
On the other hand, CAC-OS relates to a material structure of a metal oxide. CAC-OS refers to a region that is observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn, and O, and nanoparticles that are partially composed mainly of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.
なお、ＣＡＣ−ＯＳは、組成の異なる二種類以上の膜の積層構造は含まないものとする。例えば、Ｉｎを主成分とする膜と、Ｇａを主成分とする膜との２層からなる構造は、含まない。
Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.
なお、ＧａＯＸ３が主成分である領域と、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域とは、明確な境界が観察できない場合がある。
Incidentally, a region GaO X3 is the main component, and In X2 Zn Y2 O Z2 or InO X1 is the main component region, in some cases clear boundary can not be observed.
なお、ガリウムの代わりに、アルミニウム、イットリウム、銅、バナジウム、ベリリウム、ホウ素、シリコン、チタン、鉄、ニッケル、ゲルマニウム、ジルコニウム、モリブデン、ランタン、セリウム、ネオジム、ハフニウム、タンタル、タングステン、またはマグネシウムなどから選ばれた一種、または複数種が含まれている場合、ＣＡＣ−ＯＳは、一部に該金属元素を主成分とするナノ粒子状に観察される領域と、一部にＩｎを主成分とするナノ粒子状に観察される領域とが、それぞれモザイク状にランダムに分散している構成をいう。
Instead of gallium, selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.
ＣＡＣ−ＯＳは、例えば基板を意図的に加熱しない条件で、スパッタリング法により形成することができる。また、ＣＡＣ−ＯＳをスパッタリング法で形成する場合、成膜ガスとして、不活性ガス（代表的にはアルゴン）、酸素ガス、及び窒素ガスの中から選ばれたいずれか一つまたは複数を用いればよい。また、成膜時の成膜ガスの総流量に対する酸素ガスの流量比は低いほど好ましく、例えば酸素ガスの流量比を０％以上３０％未満、好ましくは０％以上１０％以下とすることが好ましい。
The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .
ＣＡＣ−ＯＳは、Ｘ線回折（ＸＲＤ：Ｘ−ｒａｙ ｄｉｆｆｒａｃｔｉｏｎ）測定法のひとつであるＯｕｔ−ｏｆ−ｐｌａｎｅ法によるθ／２θスキャンを用いて測定したときに、明確なピークが観察されないという特徴を有する。すなわち、Ｘ線回折から、測定領域のａ−ｂ面方向、及びｃ軸方向の配向は見られないことが分かる。
The CAC-OS has a feature that a clear peak is not observed when measurement is performed using a θ / 2θ scan by an out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.
またＣＡＣ−ＯＳは、プローブ径が１ｎｍの電子線（ナノビーム電子線ともいう。）を照射することで得られる電子線回折パターンにおいて、リング状に輝度の高い領域と、該リング領域に複数の輝点が観測される。従って、電子線回折パターンから、ＣＡＣ−ＯＳの結晶構造が、平面方向、及び断面方向において、配向性を有さないｎｃ（ｎａｎｏ−ｃｒｙｓｔａｌ）構造を有することがわかる。
In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.
また例えば、Ｉｎ−Ｇａ−Ｚｎ酸化物におけるＣＡＣ−ＯＳでは、エネルギー分散型Ｘ線分光法（ＥＤＸ：Ｅｎｅｒｇｙ Ｄｉｓｐｅｒｓｉｖｅ Ｘ−ｒａｙ ｓｐｅｃｔｒｏｓｃｏｐｙ）を用いて取得したＥＤＸマッピングにより、ＧａＯＸ３が主成分である領域と、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域とが、偏在し、混合している構造を有することが確認できる。
Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In X2 Zn Y2 O Z2 or InO X1 is a main component is unevenly distributed and mixed.
ＣＡＣ−ＯＳは、金属元素が均一に分布したＩＧＺＯ化合物とは異なる構造であり、ＩＧＺＯ化合物と異なる性質を有する。つまり、ＣＡＣ−ＯＳは、ＧａＯＸ３などが主成分である領域と、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域とに互いに相分離し、各元素を主成分とする領域がモザイク状である構造を有する。
The CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That, CAC-OS includes a region which is the main component such as GaO X3, In X2 Zn Y2 O Z2 or InO X1 is phase-separated from each other in a region which is the main component, and a region mainly composed of the elements It has a mosaic structure.
ここで、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域は、ＧａＯＸ３などが主成分である領域と比較して、導電性が高い領域である。つまり、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域を、キャリアが流れることにより、酸化物半導体としての導電性が発現する。従って、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域が、酸化物半導体中にクラウド状に分布することで、高い電界効果移動度（μ）が実現できる。
Here, the region containing In X2 Zn Y2 O Z2 or InO X1 as a main component is a region having higher conductivity than a region containing GaO X3 or the like as a main component. That, In X2 Zn Y2 O Z2 or InO X1, is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In X2 Zn Y2 O Z2 or InO X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility (μ) can be realized.
一方、ＧａＯＸ３などが主成分である領域は、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１が主成分である領域と比較して、絶縁性が高い領域である。つまり、ＧａＯＸ３などが主成分である領域が、酸化物半導体中に分布することで、リーク電流を抑制し、良好なスイッチング動作を実現できる。
On the other hand, areas such as GaO X3 is the main component, as compared to the In X2 Zn Y2 O Z2 or InO X1 is the main component area, it is highly regions insulating. That is, a region containing GaO X3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.
従って、ＣＡＣ−ＯＳを半導体素子に用いた場合、ＧａＯＸ３などに起因する絶縁性と、ＩｎＸ２ＺｎＹ２ＯＺ２、またはＩｎＯＸ１に起因する導電性とが、相補的に作用することにより、高いオン電流（Ｉｏｎ）、及び高い電界効果移動度（μ）を実現することができる。
Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO X3 and the like and the conductivity caused by In X2 Zn Y2 O Z2 or InO X1 act in a complementary manner, resulting in high An on-current (I on ) and high field effect mobility (μ) can be realized.
また、ＣＡＣ−ＯＳを用いた半導体素子は、信頼性が高い。従って、ＣＡＣ−ＯＳは、ディスプレイをはじめとするさまざまな半導体装置に最適である。
In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.
本実施の形態は、他の実施の形態と適宜組み合わせることができる。
This embodiment can be combined with any of the other embodiments as appropriate.
（実施の形態４）
本実施の形態では、本発明の一態様のテレビジョン装置について、図１９を用いて説明する。 (Embodiment 4)
In this embodiment, a television device of one embodiment of the present invention will be described with reference to FIGS.
本実施の形態では、本発明の一態様のテレビジョン装置について、図１９を用いて説明する。 (Embodiment 4)
In this embodiment, a television device of one embodiment of the present invention will be described with reference to FIGS.
図１９（Ａ）に、テレビジョン装置６００のブロック図を示す。
FIG. 19A shows a block diagram of a television device 600.
なお、本明細書に添付した図面では、構成要素を機能ごとに分類し、互いに独立したブロックとしてブロック図を示しているが、実際の構成要素は機能ごとに完全に切り分けることが難しく、一つの構成要素が複数の機能に係わることもあり得る。
In the drawings attached to the present specification, the components are classified by function and the block diagram is shown as an independent block. However, it is difficult to completely separate actual components by function. A component may be involved in multiple functions.
テレビジョン装置６００は、制御部６０１、記憶部６０２、通信制御部６０３、画像処理回路６０４、デコーダ回路６０５、映像信号受信部６０６、タイミングコントローラ６０７、ソースドライバ６０８、ゲートドライバ６０９、表示パネル６２０、タイミングコントローラ６４７、ソースドライバ６４８、ゲートドライバ６４９、及び調光パネル６５０等を有する。
The television apparatus 600 includes a control unit 601, a storage unit 602, a communication control unit 603, an image processing circuit 604, a decoder circuit 605, a video signal receiving unit 606, a timing controller 607, a source driver 608, a gate driver 609, a display panel 620, A timing controller 647, a source driver 648, a gate driver 649, a dimming panel 650, and the like are included.
実施の形態１で例示した表示装置が有する表示パネルは、図１９（Ａ）における表示パネル６２０に適用することができる。実施の形態１で例示した表示装置が有する調光パネルは、図１９（Ａ）における調光パネル６５０に適用することができる。これにより、大型かつ高解像度であって、高い表示品位を有するテレビジョン装置６００を実現できる。
The display panel included in the display device described in Embodiment 1 can be applied to the display panel 620 in FIG. The light control panel included in the display device illustrated in Embodiment 1 can be applied to the light control panel 650 in FIG. Accordingly, it is possible to realize a television device 600 that is large and has high resolution and high display quality.
制御部６０１は、例えば中央演算装置（ＣＰＵ：Ｃｅｎｔｒａｌ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ）として機能することができる。例えば制御部６０１は、システムバス６３０を介して記憶部６０２、通信制御部６０３、画像処理回路６０４、デコーダ回路６０５、及び映像信号受信部６０６等のコンポーネントを制御する機能を有する。
The control unit 601 can function as, for example, a central processing unit (CPU: Central Processing Unit). For example, the control unit 601 has a function of controlling components such as the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, and the video signal receiving unit 606 via the system bus 630.
制御部６０１と各コンポーネントとは、システムバス６３０を介して信号の伝達が行われる。また制御部６０１は、システムバス６３０を介して接続された各コンポーネントから入力される信号を処理する機能、各コンポーネントへ出力する信号を生成する機能等を有し、これによりシステムバス６３０に接続された各コンポーネントを統括的に制御することができる。
A signal is transmitted between the control unit 601 and each component via the system bus 630. In addition, the control unit 601 has a function of processing a signal input from each component connected via the system bus 630, a function of generating a signal output to each component, and the like, thereby being connected to the system bus 630. Each component can be controlled centrally.
記憶部６０２は、制御部６０１及び画像処理回路６０４がアクセス可能なレジスタ、キャッシュメモリ、メインメモリ、二次メモリなどとして機能する。
The storage unit 602 functions as a register, a cache memory, a main memory, a secondary memory, or the like that can be accessed by the control unit 601 and the image processing circuit 604.
二次メモリとして用いることのできる記憶装置としては、例えば書き換え可能な不揮発性の記憶素子が適用された記憶装置を用いることができる。例えば、フラッシュメモリ、ＭＲＡＭ（Ｍａｇｎｅｔｏｒｅｓｉｓｔｉｖｅ Ｒａｎｄｏｍ Ａｃｃｅｓｓ Ｍｅｍｏｒｙ）、ＰＲＡＭ（Ｐｈａｓｅ ｃｈａｎｇｅ ＲＡＭ）、ＲｅＲＡＭ（Ｒｅｓｉｓｔｉｖｅ ＲＡＭ）、ＦｅＲＡＭ（Ｆｅｒｒｏｅｌｅｃｔｒｉｃ ＲＡＭ）などを用いることができる。
As a storage device that can be used as the secondary memory, for example, a storage device to which a rewritable nonvolatile storage element is applied can be used. For example, a flash memory, an MRAM (Magnetostatic Random Access Memory), a PRAM (Phase change RAM), a ReRAM (Resistive RAM), an FeRAM (Ferroelectric RAM), or the like can be used.
また、レジスタ、キャッシュメモリ、メインメモリなどの一時メモリとして用いることのできる記憶装置としては、ＤＲＡＭ（Ｄｙｎａｍｉｃ ＲＡＭ）や、ＳＲＡＭ（Ｓｔａｔｉｃ Ｒａｎｄｏｍ Ａｃｃｅｓｓ Ｍｅｍｏｒｙ）等の揮発性の記憶素子を用いてもよい。
Further, as a storage device that can be used as a temporary memory such as a register, a cache memory, or a main memory, a volatile storage element such as a DRAM (Dynamic RAM) or an SRAM (Static Random Access Memory) may be used.
例えば、メインメモリに設けられるＲＡＭとしては、例えばＤＲＡＭが用いられ、制御部６０１の作業空間として仮想的にメモリ空間が割り当てられ利用される。記憶部６０２に格納されたオペレーティングシステム、アプリケーションプログラム、プログラムモジュール、プログラムデータ等は、実行のためにＲＡＭにロードされる。ＲＡＭにロードされたこれらのデータやプログラム、プログラムモジュールは、制御部６０１に直接アクセスされ、操作される。
For example, as a RAM provided in the main memory, for example, a DRAM is used, and a memory space is virtually allocated and used as a work space of the control unit 601. The operating system, application program, program module, program data, etc. stored in the storage unit 602 are loaded into the RAM for execution. These data, programs, and program modules loaded in the RAM are directly accessed and operated by the control unit 601.
一方、ＲＯＭには書き換えを必要としないＢＩＯＳ（Ｂａｓｉｃ Ｉｎｐｕｔ／Ｏｕｔｐｕｔ Ｓｙｓｔｅｍ）やファームウェア等を格納することができる。ＲＯＭとしては、マスクＲＯＭや、ＯＴＰＲＯＭ（Ｏｎｅ Ｔｉｍｅ Ｐｒｏｇｒａｍｍａｂｌｅ Ｒｅａｄ Ｏｎｌｙ Ｍｅｍｏｒｙ）、ＥＰＲＯＭ（Ｅｒａｓａｂｌｅ Ｐｒｏｇｒａｍｍａｂｌｅ Ｒｅａｄ Ｏｎｌｙ Ｍｅｍｏｒｙ）等を用いることができる。ＥＰＲＯＭとしては、紫外線照射により記憶データの消去を可能とするＵＶ−ＥＰＲＯＭ（Ｕｌｔｒａ−Ｖｉｏｌｅｔ Ｅｒａｓａｂｌｅ Ｐｒｏｇｒａｍｍａｂｌｅ Ｒｅａｄ Ｏｎｌｙ Ｍｅｍｏｒｙ）、ＥＥＰＲＯＭ（Ｅｌｅｃｔｒｉｃａｌｌｙ Ｅｒａｓａｂｌｅ Ｐｒｏｇｒａｍｍａｂｌｅ Ｒｅａｄ Ｏｎｌｙ Ｍｅｍｏｒｙ）、フラッシュメモリなどが挙げられる。
On the other hand, the ROM can store BIOS (Basic Input / Output System), firmware and the like that do not require rewriting. As ROM, mask ROM, OTPROM (One Time Programmable Read Only Memory), EPROM (Erasable Programmable Read Only Memory), etc. can be used. Examples of EPROM include UV-EPROM (Ultra-Violet Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), etc. that can erase stored data by ultraviolet irradiation.
また、記憶部６０２の他に、取り外し可能な記憶装置を接続可能な構成としてもよい。例えばストレージデバイスとして機能するハードディスクドライブ（Ｈａｒｄ Ｄｉｓｋ Ｄｒｉｖｅ：ＨＤＤ）やソリッドステートドライブ（Ｓｏｌｉｄ Ｓｔａｔｅ Ｄｒｉｖｅ：ＳＳＤ）などの記録メディアドライブ、フラッシュメモリ、ブルーレイディスク、ＤＶＤなどの記録媒体と接続する端子を有することが好ましい。これにより、映像を記録することができる。
In addition to the storage unit 602, a removable storage device may be connected. For example, it has a terminal for connecting to a recording medium drive such as a hard disk drive (Hard Disk Drive: HDD) or a solid state drive (SSD) that functions as a storage device, a recording medium such as a flash memory, a Blu-ray disc, or a DVD. Is preferred. Thereby, a video can be recorded.
通信制御部６０３は、コンピュータネットワークを介して行われる通信を制御する機能を有する。例えば、制御部６０１からの命令に応じてコンピュータネットワークに接続するための制御信号を制御し、当該信号をコンピュータネットワークに発信する。これによって、Ｗｏｒｌｄ Ｗｉｄｅ Ｗｅｂ（ＷＷＷ）の基盤であるインターネット、イントラネット、エクストラネット、ＰＡＮ（Ｐｅｒｓｏｎａｌ Ａｒｅａ Ｎｅｔｗｏｒｋ）、ＬＡＮ（Ｌｏｃａｌ Ａｒｅａ Ｎｅｔｗｏｒｋ）、ＣＡＮ（Ｃａｍｐｕｓ Ａｒｅａ Ｎｅｔｗｏｒｋ）、ＭＡＮ（Ｍｅｔｒｏｐｏｌｉｔａｎ Ａｒｅａ Ｎｅｔｗｏｒｋ）、ＷＡＮ（Ｗｉｄｅ Ａｒｅａ Ｎｅｔｗｏｒｋ）、ＧＡＮ（Ｇｌｏｂａｌ Ａｒｅａ Ｎｅｔｗｏｒｋ）等のコンピュータネットワークに接続し、通信を行うことができる。
The communication control unit 603 has a function of controlling communication performed via a computer network. For example, the control signal for connecting to the computer network is controlled in accordance with a command from the control unit 601, and the signal is transmitted to the computer network. As a result, the Internet, intranet, extranet, PAN (Personal Area Network), LAN (Local Area Network), CAN (Campus Area Network), and MAN (MetroApoNetwork) are the foundations of the World Wide Web (WWW). Communication can be performed by connecting to a computer network such as Wide Area Network (GA) or GAN (Global Area Network).
また、通信制御部６０３は、Ｗｉ−Ｆｉ（登録商標）、Ｂｌｕｅｔｏｏｔｈ（登録商標）、ＺｉｇＢｅｅ（登録商標）等の通信規格を用いてコンピュータネットワークまたは他の電子機器と通信する機能を有していてもよい。
The communication control unit 603 has a function of communicating with a computer network or other electronic devices using a communication standard such as Wi-Fi (registered trademark), Bluetooth (registered trademark), or ZigBee (registered trademark). Also good.
通信制御部６０３は、無線により通信する機能を有していてもよい。例えばアンテナと高周波回路（ＲＦ回路）を設け、ＲＦ信号の送受信を行えばよい。高周波回路は、各国法制により定められた周波数帯域の電磁信号と電気信号とを相互に変換し、当該電磁信号を用いて無線で他の通信機器との間で通信を行うための回路である。実用的な周波数帯域として数１０ｋＨｚ~数１０ＧＨｚが一般に用いられている。アンテナと接続される高周波回路には、複数の周波数帯域に対応した高周波回路部を有し、高周波回路部は、増幅器（アンプ）、ミキサ、フィルタ、ＤＳＰ、ＲＦトランシーバ等を有する構成とすることができる。
The communication control unit 603 may have a function of communicating wirelessly. For example, an antenna and a high frequency circuit (RF circuit) may be provided to transmit and receive an RF signal. The high-frequency circuit is a circuit for mutually converting an electromagnetic signal and an electric signal in a frequency band determined by the legislation of each country and performing communication with other communication devices wirelessly using the electromagnetic signal. Several tens of kHz to several tens of GHz is generally used as a practical frequency band. The high-frequency circuit connected to the antenna includes a high-frequency circuit unit corresponding to a plurality of frequency bands, and the high-frequency circuit unit includes an amplifier (amplifier), a mixer, a filter, a DSP, an RF transceiver, and the like. it can.
映像信号受信部６０６は、例えばアンテナ、復調回路、及びＡ−Ｄ変換回路（アナログ−デジタル変換回路）等を有する。復調回路は、アンテナから入力した信号を復調する機能を有する。またＡ−Ｄ変換回路は、復調されたアナログ信号をデジタル信号に変換する機能を有する。映像信号受信部６０６で処理された信号は、デコーダ回路６０５に送られる。
The video signal receiving unit 606 includes, for example, an antenna, a demodulation circuit, an A / D conversion circuit (analog-digital conversion circuit), and the like. The demodulation circuit has a function of demodulating a signal input from the antenna. The A-D conversion circuit has a function of converting the demodulated analog signal into a digital signal. The signal processed by the video signal receiving unit 606 is sent to the decoder circuit 605.
デコーダ回路６０５は、映像信号受信部６０６から入力されるデジタル信号に含まれる映像データを、送信される放送規格の仕様に従ってデコードし、画像処理回路に送信する信号を生成する機能を有する。例えば８Ｋ放送における放送規格としては、Ｈ．２６５ ｜ ＭＰＥＧ−Ｈ Ｈｉｇｈ Ｅｆｆｉｃｉｅｎｃｙ Ｖｉｄｅｏ Ｃｏｄｉｎｇ（略称：ＨＥＶＣ）などがある。
The decoder circuit 605 has a function of decoding video data included in a digital signal input from the video signal receiving unit 606 in accordance with the specification of a broadcast standard to be transmitted, and generating a signal to be transmitted to the image processing circuit. For example, as a broadcasting standard in 8K broadcasting, H.264 is used. H.265 | MPEG-H High Efficiency Video Coding (abbreviation: HEVC).
映像信号受信部６０６が有するアンテナにより受信できる放送電波としては、地上波、または衛星から送信される電波などが挙げられる。またアンテナにより受信できる放送電波として、アナログ放送、デジタル放送などがあり、また映像及び音声、または音声のみの放送などがある。例えばＵＨＦ帯（約３００ＭＨｚ~３ＧＨｚ）またはＶＨＦ帯（３０ＭＨｚ~３００ＭＨｚ）のうちの特定の周波数帯域で送信される放送電波を受信することができる。また例えば、複数の周波数帯域で受信した複数のデータを用いることで、転送レートを高くすることができ、より多くの情報を得ることができる。これによりフルハイビジョンを超える解像度を有する映像を、表示パネル６２０に表示させることができる。例えば、４Ｋ２Ｋ、８Ｋ４Ｋ、１６Ｋ８Ｋ、またはそれ以上の解像度を有する映像を表示させることができる。
Examples of broadcast radio waves that can be received by the antenna included in the video signal receiving unit 606 include ground waves or radio waves transmitted from satellites. Broadcast radio waves that can be received by an antenna include analog broadcast and digital broadcast, and also includes video and audio, or audio-only broadcast. For example, broadcast radio waves transmitted in a specific frequency band in the UHF band (about 300 MHz to 3 GHz) or the VHF band (30 MHz to 300 MHz) can be received. In addition, for example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased and more information can be obtained. Accordingly, an image having a resolution exceeding full high-definition can be displayed on the display panel 620. For example, an image having a resolution of 4K2K, 8K4K, 16K8K, or higher can be displayed.
また、映像信号受信部６０６及びデコータ回路６０５は、コンピュータネットワークを介したデータ伝送技術により送信された放送のデータを用いて、画像処理回路６０４に送信する信号を生成する構成としてもよい。このとき、受信する信号がデジタル信号の場合には、映像信号受信部６０６は復調回路及びＡ−Ｄ変換回路等を有していなくてもよい。
Further, the video signal receiving unit 606 and the decoder circuit 605 may be configured to generate a signal to be transmitted to the image processing circuit 604 using broadcast data transmitted by a data transmission technique via a computer network. At this time, when the signal to be received is a digital signal, the video signal receiving unit 606 may not include a demodulation circuit, an A-D conversion circuit, and the like.
画像処理回路６０４は、デコーダ回路６０５から入力される映像信号に基づいて、タイミングコントローラ６０７に出力する映像信号を生成する機能を有する。また、画像処理回路６０４は、デコーダ回路６０５から入力される映像信法に基づいて、タイミングコントローラ６４７に出力する信号を生成する機能を有する。なお、画像処理回路６０４は、さらに、デコーダ回路６０５から入力される映像信号に基づいて、バックライトユニットに出力する信号を生成する機能を有していてもよい。
The image processing circuit 604 has a function of generating a video signal to be output to the timing controller 607 based on the video signal input from the decoder circuit 605. The image processing circuit 604 has a function of generating a signal to be output to the timing controller 647 based on the video signal input from the decoder circuit 605. Note that the image processing circuit 604 may further have a function of generating a signal to be output to the backlight unit based on the video signal input from the decoder circuit 605.
タイミングコントローラ６０７は、画像処理回路６０４が処理を施した映像信号等に含まれる同期信号を基に、ゲートドライバ６０９及びソースドライバ６０８に出力する信号（クロック信号、スタートパルス信号などの信号）を生成する機能を有する。また、タイミングコントローラ６０７は、上記信号に加え、ソースドライバ６０８に出力するビデオ信号を生成する機能を有する。
The timing controller 607 generates a signal (a signal such as a clock signal or a start pulse signal) to be output to the gate driver 609 and the source driver 608 based on the synchronization signal included in the video signal processed by the image processing circuit 604. It has the function to do. The timing controller 607 has a function of generating a video signal to be output to the source driver 608 in addition to the above signals.
表示パネル６２０は、複数の画素６２１を有する。各画素６２１は、ゲートドライバ６０９及びソースドライバ６０８から供給される信号により駆動される。ここでは、画素数が７６８０×４３２０である、８Ｋ４Ｋ規格に応じた解像度を有する表示パネルの例を示している。なお、表示パネル６２０の解像度はこれに限られず、フルハイビジョン（画素数１９２０×１０８０）または４Ｋ２Ｋ（画素数３８４０×２１６０）等の規格に応じた解像度であってもよい。
The display panel 620 includes a plurality of pixels 621. Each pixel 621 is driven by signals supplied from the gate driver 609 and the source driver 608. Here, an example of a display panel having a resolution according to the 8K4K standard having the number of pixels of 7680 × 4320 is shown. Note that the resolution of the display panel 620 is not limited to this, and may be a resolution according to a standard such as full high-definition (pixel number 1920 × 1080) or 4K2K (pixel number 3840 × 2160).
タイミングコントローラ６４７は、画像処理回路６０４が処理を施した信号に含まれる同期信号を基に、ゲートドライバ６４９及びソースドライバ６４８に出力する信号を生成する機能を有する。また、タイミングコントローラ６４７は、上記信号に加え、ソースドライバ６４８に出力するビデオ信号を生成する機能を有する。なお、１つのタイミングコントローラが、表示パネル６２０と調光パネル６５０の双方を駆動するための信号を生成してもよい。
The timing controller 647 has a function of generating signals to be output to the gate driver 649 and the source driver 648 based on a synchronization signal included in the signal processed by the image processing circuit 604. The timing controller 647 has a function of generating a video signal to be output to the source driver 648 in addition to the above signals. One timing controller may generate a signal for driving both the display panel 620 and the light control panel 650.
調光パネル６５０は、複数の画素６５１を有する。各画素６５１は、ゲートドライバ６４９及びソースドライバ６４８から供給される信号により駆動される。調光パネル６５０の画素数は、表示パネル６２０と同じであってもよく異なっていてもよい。
The light control panel 650 includes a plurality of pixels 651. Each pixel 651 is driven by signals supplied from the gate driver 649 and the source driver 648. The number of pixels of the light control panel 650 may be the same as or different from that of the display panel 620.
図１９（Ａ）に示す制御部６０１や画像処理回路６０４としては、例えばプロセッサを有する構成とすることができる。例えば、制御部６０１は、ＣＰＵとして機能するプロセッサを用いることができる。また、画像処理回路６０４として、例えばＤＳＰ（Ｄｉｇｉｔａｌ Ｓｉｇｎａｌ Ｐｒｏｃｅｓｓｏｒ）、ＧＰＵ（Ｇｒａｐｈｉｃｓ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ）等の他のプロセッサを用いることができる。また制御部６０１や画像処理回路６０４に、上記プロセッサをＦＰＧＡ（Ｆｉｅｌｄ Ｐｒｏｇｒａｍｍａｂｌｅ Ｇａｔｅ Ａｒｒａｙ）やＦＰＡＡ（Ｆｉｅｌｄ Ｐｒｏｇｒａｍｍａｂｌｅ Ａｎａｌｏｇ Ａｒｒａｙ）といったＰＬＤ（Ｐｒｏｇｒａｍｍａｂｌｅ Ｌｏｇｉｃ Ｄｅｖｉｃｅ）によって実現した構成としてもよい。
For example, the control unit 601 and the image processing circuit 604 illustrated in FIG. 19A can include a processor. For example, the control unit 601 can use a processor that functions as a CPU. In addition, as the image processing circuit 604, other processors such as a DSP (Digital Signal Processor) and a GPU (Graphics Processing Unit) can be used. Further, the control unit 601 and the image processing circuit 604 may have a configuration in which the processor is realized by a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or an FPAA (Field Programmable Analog Array).
プロセッサは、種々のプログラムからの命令を解釈し実行することで、各種のデータ処理やプログラム制御を行う。プロセッサにより実行しうるプログラムは、プロセッサが有するメモリ領域に格納されていてもよいし、別途設けられる記憶装置に格納されていてもよい。
The processor performs various data processing and program control by interpreting and executing instructions from various programs. The program that can be executed by the processor may be stored in a memory area of the processor, or may be stored in a storage device provided separately.
また、制御部６０１、記憶部６０２、通信制御部６０３、画像処理回路６０４、デコーダ回路６０５、及び映像信号受信部６０６、タイミングコントローラ６０７、及びタイミングコントローラ６４７のそれぞれが有する機能のうち、２つ以上の機能を１つのＩＣチップに集約させ、システムＬＳＩを構成してもよい。例えば、プロセッサ、デコーダ回路、チューナ回路、Ａ−Ｄ変換回路、ＤＲＡＭ、及びＳＲＡＭ等を有するシステムＬＳＩとしてもよい。
Two or more of the functions of the control unit 601, the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, the video signal receiving unit 606, the timing controller 607, and the timing controller 647 are provided. These functions may be integrated into one IC chip to constitute a system LSI. For example, a system LSI including a processor, a decoder circuit, a tuner circuit, an A / D conversion circuit, a DRAM, and an SRAM may be used.
なお、制御部６０１や、他のコンポーネントが有するＩＣ等に、チャネル形成領域に酸化物半導体を用い、極めて低いオフ電流が実現されたトランジスタを利用することもできる。当該トランジスタは、オフ電流が極めて低いため、当該トランジスタを記憶素子として機能する容量素子に流入した電荷（データ）を保持するためのスイッチとして用いることで、データの保持期間を長期にわたり確保することができる。この特性を制御部６０１等のレジスタやキャッシュメモリに用いることで、必要なときだけ制御部６０１を動作させ、他の場合には直前の処理の情報を当該記憶素子に待避させることにより、ノーマリーオフコンピューティングが可能となる。これにより、テレビジョン装置６００の低消費電力化を図ることができる。
Note that a transistor in which an oxide semiconductor is used for a channel formation region and an extremely low off-state current is realized can be used for the controller 601, an IC included in another component, or the like. Since the transistor has extremely low off-state current, the use of the transistor as a switch for holding charge (data) flowing into the capacitor functioning as a memory element can ensure a data holding period for a long time. it can. By using this characteristic for a register such as the control unit 601 or a cache memory, the control unit 601 is operated only when necessary, and in other cases, information on the immediately preceding process is saved in the storage element, so that it is normally. Off-computing becomes possible. Thereby, the power consumption of the television apparatus 600 can be reduced.
なお、図１９（Ａ）のテレビジョン装置６００の構成は一例であり、全ての構成要素を含む必要はない。テレビジョン装置６００は、図１９（Ａ）に示す構成要素のうち必要な構成要素を有していればよい。また、テレビジョン装置６００は、図１９（Ａ）に示す構成要素以外の構成要素を有していてもよい。
Note that the structure of the television device 600 in FIG. 19A is just an example, and it is not necessary to include all of the components. The television set 600 only needs to include necessary components from among the components illustrated in FIG. In addition, the television device 600 may include a component other than the components illustrated in FIG.
例えば、テレビジョン装置６００は、図１９（Ａ）に示す構成のほか、外部インターフェース、音声出力部、タッチパネルユニット、センサユニット、カメラユニットなどを有していてもよい。例えば外部インターフェースとしては、例えばＵＳＢ（Ｕｎｉｖｅｒｓａｌ Ｓｅｒｉａｌ Ｂｕｓ）端子、ＬＡＮ（Ｌｏｃａｌ Ａｒｅａ Ｎｅｔｗｏｒｋ）接続用端子、電源受給用端子、音声出力用端子、音声入力用端子、映像出力用端子、映像入力用端子などの外部接続端子、赤外線、可視光、紫外線などを用いた光通信用の送受信機、筐体に設けられた物理ボタンなどがある。また、例えば音声入出力部としては、サウンドコントローラ、マイクロフォン、スピーカなどがある。
For example, the television device 600 may include an external interface, an audio output unit, a touch panel unit, a sensor unit, a camera unit, and the like in addition to the configuration illustrated in FIG. For example, as an external interface, for example, a USB (Universal Serial Bus) terminal, a LAN (Local Area Network) connection terminal, a power receiving terminal, an audio output terminal, an audio input terminal, an image output terminal, an image input terminal, etc. External connection terminals, transceivers for optical communication using infrared rays, visible light, ultraviolet rays, etc., physical buttons provided on the housing, and the like. For example, the sound input / output unit includes a sound controller, a microphone, a speaker, and the like.
以下では、画像処理回路６０４についてより詳細な説明を行う。
Hereinafter, the image processing circuit 604 will be described in more detail.
画像処理回路６０４は、デコーダ回路６０５から入力される映像信号に基づいて、画像処理を実行する機能を有することが好ましい。
The image processing circuit 604 preferably has a function of executing image processing based on the video signal input from the decoder circuit 605.
画像処理としては、例えばノイズ除去処理、階調変換処理、色調補正処理、輝度補正処理などが挙げられる。色調補正処理や輝度補正処理としては、例えばガンマ補正などがある。
Examples of image processing include noise removal processing, gradation conversion processing, color tone correction processing, and luminance correction processing. Examples of the color tone correction process and the brightness correction process include gamma correction.
また、画像処理回路６０４は、解像度のアップコンバートに伴う画素間補間処理や、フレーム周波数のアップコンバートに伴うフレーム間補間などの処理を実行する機能を有していることが好ましい。
Further, the image processing circuit 604 preferably has a function of executing processing such as inter-pixel interpolation processing accompanying resolution up-conversion and inter-frame interpolation processing accompanying frame frequency up-conversion.
例えば、ノイズ除去処理としては、文字などの輪郭の周辺に生じるモスキートノイズ、高速の動画で生じるブロックノイズ、ちらつきを生じるランダムノイズ、解像度のアップコンバートにより生じるドットノイズなどのさまざまなノイズを除去する。
For example, as noise removal processing, various noises such as mosquito noise generated around the outline of characters, block noise generated in high-speed moving images, flickering random noise, and dot noise generated by resolution up-conversion are removed.
階調変換処理は、画像の階調を表示パネル６２０の出力特性に対応した階調へ変換する処理である。例えば階調数を大きくする場合、小さい階調数で入力された画像に対して、各画素に対応する階調値を補間して割り当てることで、ヒストグラムを平滑化する処理を行うことができる。また、ダイナミックレンジを広げる、ハイダイナミックレンジ（ＨＤＲ）処理も、階調変換処理に含まれる。
The gradation conversion process is a process for converting the gradation of an image into a gradation corresponding to the output characteristics of the display panel 620. For example, when the number of gradations is increased, a process for smoothing the histogram can be performed by interpolating and assigning gradation values corresponding to each pixel to an image input with a small number of gradations. Further, a high dynamic range (HDR) process for expanding the dynamic range is also included in the gradation conversion process.
また、画素間補間処理は、解像度をアップコンバートした際に、本来存在しないデータを補間する。例えば、目的の画素の周囲の画素を参照し、それらの中間色を表示するようにデータを補間する。
The inter-pixel interpolation process interpolates data that does not originally exist when the resolution is up-converted. For example, referring to pixels around the target pixel, the data is interpolated so as to display the intermediate colors.
また、色調補正処理は、画像の色調を補正する処理である。また輝度補正処理は、画像の明るさ（輝度コントラスト）を補正する処理である。例えば、テレビジョン装置６００が設けられる空間の照明の種類や輝度、または色純度などを検知し、それに応じて表示パネル６２０に表示する画像の輝度や色調が最適となるように補正する。または、表示する画像と、あらかじめ保存してある画像リスト内の様々な場面の画像と、を照合し、最も近い場面の画像に適した輝度や色調に表示する画像を補正する機能を有していてもよい。
The color tone correction process is a process for correcting the color tone of an image. The brightness correction process is a process for correcting the brightness (brightness contrast) of the image. For example, the type, brightness, or color purity of the illumination in the space where the television apparatus 600 is provided is detected, and the brightness and color tone of the image displayed on the display panel 620 are corrected accordingly. Or, it has a function to compare the image to be displayed with the images of various scenes in the image list stored in advance, and to correct the image displayed with brightness and color tone suitable for the image of the closest scene. May be.
フレーム間補間は、表示する映像のフレーム周波数を増大させる場合に、本来存在しないフレーム（補間フレーム）の画像を生成する。例えば、ある２枚の画像の差分から２枚の画像の間に挿入する補間フレームの画像を生成する。または２枚の画像の間に複数枚の補間フレームの画像を生成することもできる。例えばデコーダ回路６０５から入力される映像信号のフレーム周波数が６０Ｈｚであったとき、複数枚の補間フレームを生成することで、タイミングコントローラ６０７に出力する映像信号のフレーム周波数を、２倍の１２０Ｈｚ、または４倍の２４０Ｈｚ、または８倍の４８０Ｈｚなどに増大させることができる。
Interframe interpolation generates an image of a frame (interpolation frame) that does not originally exist when the frame frequency of a video to be displayed is increased. For example, an interpolation frame image to be inserted between two images is generated from the difference between two images. Alternatively, an image of a plurality of interpolation frames can be generated between two images. For example, when the frame frequency of the video signal input from the decoder circuit 605 is 60 Hz, the frame frequency of the video signal output to the timing controller 607 is doubled by 120 Hz by generating a plurality of interpolation frames, or It can be increased to 4 times 240 Hz or 8 times 480 Hz.
また、画像処理回路６０４は、ニューラルネットワークを利用して、画像処理を実行する機能を有していることが好ましい。図１９（Ａ）では、画像処理回路６０４がニューラルネットワーク６１０を有している例を示している。
The image processing circuit 604 preferably has a function of executing image processing using a neural network. FIG. 19A shows an example in which the image processing circuit 604 includes a neural network 610.
例えば、ニューラルネットワーク６１０により、例えば映像に含まれる画像データから特徴抽出を行うことができる。また画像処理回路６０４は、抽出された特徴に応じて最適な補正方法を選択することや、または補正に用いるパラメータを選択することができる。
For example, the neural network 610 can perform feature extraction from image data included in a video, for example. The image processing circuit 604 can select an optimal correction method according to the extracted features, or can select parameters used for correction.
または、ニューラルネットワーク６１０自体に画像処理を行う機能を持たせてもよい。すなわち、画像処理を施す前の画像データをニューラルネットワーク６１０に入力することで、画像処理が施された画像データを出力させる構成としてもよい。
Alternatively, the neural network 610 itself may have a function of performing image processing. That is, the image data that has been subjected to image processing may be output by inputting the image data before being subjected to image processing to the neural network 610.
また、ニューラルネットワーク６１０に用いる重み係数のデータは、データテーブルとして記憶部６０２に格納される。当該重み係数を含むデータテーブルは、例えば通信制御部６０３により、コンピュータネットワークを介して最新のものに更新することができる。または、画像処理回路６０４が学習機能を有し、重み係数を含むデータテーブルを更新可能な構成としてもよい。
In addition, weight coefficient data used for the neural network 610 is stored in the storage unit 602 as a data table. The data table including the weighting coefficient can be updated to the latest one via the computer network by the communication control unit 603, for example. Alternatively, the image processing circuit 604 may have a learning function so that a data table including a weighting factor can be updated.
また、画像処理回路６０４は、デコーダ回路６０５から入力される映像信号に基づいて、調光パネル６５０の透過領域における透過率分布を示す信号を生成する機能を有することが好ましい。当該信号の生成に、ニューラルネットワーク６１０を利用することが好ましい。
The image processing circuit 604 preferably has a function of generating a signal indicating the transmittance distribution in the transmission region of the light control panel 650 based on the video signal input from the decoder circuit 605. It is preferable to use a neural network 610 for generating the signal.
また、画像処理回路６０４は、デコーダ回路６０５から入力される映像信号に基づいて、バックライトユニットにおける輝度を示す信号を生成する機能を有することが好ましい。当該信号の生成に、ニューラルネットワーク６１０を利用することが好ましい。
The image processing circuit 604 preferably has a function of generating a signal indicating luminance in the backlight unit based on the video signal input from the decoder circuit 605. It is preferable to use a neural network 610 for generating the signal.
図１９（Ｂ）に、画像処理回路６０４が有するニューラルネットワーク６１０の概略図を示す。
FIG. 19B shows a schematic diagram of a neural network 610 included in the image processing circuit 604.
なお、本明細書等においてニューラルネットワークとは、生物の神経回路網を模し、学習によってニューロンどうしの結合強度を決定し、問題解決能力を持たせるモデル全般を指す。ニューラルネットワークは入力層、中間層（隠れ層ともいう）、出力層を有する。ニューラルネットワークのうち、２層以上の中間層を有するものをディープニューラルネットワーク（ＤＮＮ）と呼称し、ディープニューラルネットワークによる学習を「ディープラーニング」と呼称する。
In this specification and the like, a neural network refers to a general model that imitates a biological neural network, determines the connection strength between neurons by learning, and has problem solving ability. The neural network has an input layer, an intermediate layer (also referred to as a hidden layer), and an output layer. A neural network having two or more intermediate layers is called a deep neural network (DNN), and learning by the deep neural network is called “deep learning”.
また、本明細書等において、ニューラルネットワークについて述べる際に、既にある情報からニューロンとニューロンの結合強度（重み係数とも言う）を決定することを「学習」と呼ぶ場合がある。また、本明細書等において、学習によって得られた結合強度を用いてニューラルネットワークを構成し、そこから新たな結論を導くことを「推論」と呼ぶ場合がある。
In this specification and the like, when describing a neural network, determining the connection strength (also referred to as a weighting factor) between neurons from existing information may be referred to as “learning”. Further, in this specification and the like, there is a case where “inference” refers to constructing a neural network using the connection strength obtained by learning and deriving a new conclusion therefrom.
ニューラルネットワーク６１０は、入力層６１１、１つ以上の中間層６１２、及び出力層６１３を有する。入力層６１１には入力データが入力される。出力層６１３からは出力データが出力される。
The neural network 610 includes an input layer 611, one or more intermediate layers 612, and an output layer 613. Input data is input to the input layer 611. Output data is output from the output layer 613.
入力層６１１、中間層６１２、及び出力層６１３は、それぞれニューロン６１５を有する。ここでニューロン６１５は、積和演算を実現しうる回路素子（積和演算素子）を指す。図１９（Ｂ）では、２つの層が有する２つのニューロン６１５間におけるデータの入出力方向を矢印で示している。
The input layer 611, the intermediate layer 612, and the output layer 613 each have a neuron 615. Here, the neuron 615 indicates a circuit element (product-sum operation element) capable of realizing product-sum operation. In FIG. 19B, the input / output direction of data between two neurons 615 included in two layers is indicated by arrows.
それぞれの層における演算処理は、前層が有するニューロン６１５の出力と重み係数との積和演算により実行される。例えば、入力層６１１の第ｉ番目のニューロンの出力をｘｉとし、出力ｘｉと次の中間層６１２の第ｊニューロンとの結合強度（重み係数）をｗｊｉとすると、当該中間層の第ｊニューロンの出力はｙｊ＝ｆ（Σｗｊｉ・ｘｉ）である。なお、ｉ、ｊは１以上の整数とする。ここで、ｆ（ｘ）は活性化関数でシグモイド関数、閾値関数などを用いることができる。以下同様に、各層のニューロン６１５の出力は、前段層のニューロン６１５の出力と重み係数の積和演算結果に活性化関数を演算した値となる。また、層と層との結合は、全てのニューロン同士が結合する全結合としてもよいし、一部のニューロン同士が結合する部分結合としてもよい。
Arithmetic processing in each layer is executed by a product-sum operation between the output of the neuron 615 included in the previous layer and the weight coefficient. For example, if the output of the i-th neuron of the input layer 611 is x i and the coupling strength (weighting coefficient) between the output x i and the j-th neuron of the next intermediate layer 612 is w ji , The output of the j neuron is y j = f (Σw ji · x i ). Note that i and j are integers of 1 or more. Here, f (x) is an activation function, and a sigmoid function, a threshold function, or the like can be used. Similarly, the output of the neuron 615 of each layer is a value obtained by calculating the activation function on the product-sum operation result of the output of the neuron 615 of the previous layer and the weight coefficient. The connection between layers may be a total connection in which all neurons are connected, or a partial connection in which some neurons are connected.
図１９（Ｂ）では、３つの中間層６１２を有する例を示している。なお、中間層６１２の数はこれに限られず、１つ以上の中間層を有していればよい。また、１つの中間層６１２が有するニューロンの数も、仕様に応じて適宜変更すればよい。例えば１つの中間層６１２が有するニューロン６１５の数は、入力層６１１または出力層６１３が有するニューロン６１５の数よりも多くてもよいし、少なくてもよい。
FIG. 19B illustrates an example having three intermediate layers 612. Note that the number of the intermediate layers 612 is not limited to this, and it is only necessary to include one or more intermediate layers. In addition, the number of neurons included in one intermediate layer 612 may be changed as appropriate according to specifications. For example, the number of neurons 615 included in one intermediate layer 612 may be larger or smaller than the number of neurons 615 included in the input layer 611 or the output layer 613.
ニューロン６１５同士の結合強度の指標となる重み係数は、学習によって決定される。学習は、テレビジョン装置６００が有するプロセッサにより実行してもよいが、専用サーバーやクラウドなどの演算処理能力の優れた計算機で実行することが好ましい。学習により決定された重み係数は、テーブルとして上記記憶部６０２に格納され、画像処理回路６０４により読み出されることにより使用される。また、当該テーブルは、必要に応じてコンピュータネットワークを介して更新することができる。
A weighting factor that is an index of the strength of connection between the neurons 615 is determined by learning. The learning may be executed by a processor included in the television apparatus 600, but is preferably executed by a computer having an excellent arithmetic processing capability such as a dedicated server or a cloud. The weighting coefficient determined by learning is stored in the storage unit 602 as a table and is used by being read out by the image processing circuit 604. The table can be updated via a computer network as necessary.
本実施の形態は、他の実施の形態と適宜組み合わせることができる。
This embodiment can be combined with any of the other embodiments as appropriate.
（実施の形態５）
本実施の形態では、本発明の一態様の電子機器について、図２０を用いて説明する。 (Embodiment 5)
In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.
本実施の形態では、本発明の一態様の電子機器について、図２０を用いて説明する。 (Embodiment 5)
In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.
本実施の形態の電子機器は、表示部に本発明の一態様の表示装置を有する。したがって、高いコントラスト比が実現された電子機器である。また、高いコントラスト比と、大きな画面が両立された電子機器とすることができる。
The electronic device of this embodiment includes the display device of one embodiment of the present invention in the display portion. Therefore, the electronic device has a high contrast ratio. In addition, the electronic device can achieve both a high contrast ratio and a large screen.
本実施の形態の電子機器の表示部には、例えばフルハイビジョン、４Ｋ２Ｋ、８Ｋ４Ｋ、１６Ｋ８Ｋ、またはそれ以上の解像度を有する映像を表示させることができる。また、表示部の画面サイズとしては、対角２０インチ以上、対角３０インチ以上、対角５０インチ以上、対角６０インチ以上、または対角７０インチ以上とすることができる。また、表示部のフレーム周波数としては、６０Ｈｚ以上または１２０Ｈｚ以上とすることができ、具体的には２４０Ｈｚとしてもよい。また、表示部が表示する画像の階調は、８ビット以上または１２ビット以上とすることができる。
For example, full high vision, 4K2K, 8K4K, 16K8K, or higher resolution video can be displayed on the display portion of the electronic device of this embodiment. The screen size of the display unit can be 20 inches or more diagonal, 30 inches or more, 50 inches or more, 60 inches or more, or 70 inches or more. The frame frequency of the display unit can be 60 Hz or higher or 120 Hz or higher, and specifically 240 Hz. Further, the gradation of the image displayed on the display unit can be 8 bits or more or 12 bits or more.
電子機器としては、例えば、テレビジョン装置、デスクトップ型もしくはノート型のパーソナルコンピュータ、コンピュータ用などのモニタ、デジタルサイネージ（Ｄｉｇｉｔａｌ Ｓｉｇｎａｇｅ：電子看板）、パチンコ機などの大型ゲーム機などの比較的大きな画面を備える電子機器の他、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、などが挙げられる。
Examples of electronic devices include relatively large screens such as television devices, desktop or notebook personal computers, monitors for computers, digital signage (digital signage), and large game machines such as pachinko machines. In addition to the electronic devices provided, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, a sound reproduction device, and the like can be given.
本実施の形態の電子機器は、家屋もしくはビルの内壁もしくは外壁、または、自動車の内装もしくは外装の曲面に沿って組み込むことができる。
The electronic device of this embodiment can be incorporated along a curved surface of an inner wall or an outer wall of a house or a building, or an interior or exterior of an automobile.
本実施の形態の電子機器は、アンテナを有していてもよい。アンテナで信号を受信することで、表示部で映像や情報等の表示を行うことができる。また、電子機器がアンテナ及び二次電池を有する場合、アンテナを、非接触電力伝送に用いてもよい。
The electronic device of this embodiment may include an antenna. By receiving a signal with an antenna, video, information, and the like can be displayed on the display unit. In the case where the electronic device has an antenna and a secondary battery, the antenna may be used for non-contact power transmission.
本実施の形態の電子機器は、センサ（力、変位、位置、速度、加速度、角速度、回転数、距離、光、液、磁気、温度、化学物質、音声、時間、硬度、電場、電流、電圧、電力、放射線、流量、湿度、傾度、振動、においまたは赤外線を測定する機能を含むもの）を有していてもよい。
The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage. , Power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared measurement function).
本実施の形態の電子機器は、様々な機能を有することができる。例えば、様々な情報（静止画、動画、テキスト画像など）を表示部に表示する機能、タッチパネル機能、カレンダー、日付または時刻などを表示する機能、様々なソフトウェア（プログラム）を実行する機能、無線通信機能、記録媒体に記録されているプログラムまたはデータを読み出す機能等を有することができる。
The electronic device of this embodiment can have various functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, a function for executing various software (programs), and wireless communication A function, a function of reading a program or data recorded on a recording medium, and the like can be provided.
図２０（Ａ）にテレビジョン装置の一例を示す。テレビジョン装置７１００は、筐体７１０１に表示部７０００が組み込まれている。ここでは、スタンド７１０３により筐体７１０１を支持した構成を示している。
FIG. 20A illustrates an example of a television set. In the television device 7100, a display portion 7000 is incorporated in a housing 7101. Here, a structure in which the housing 7101 is supported by a stand 7103 is shown.
表示部７０００に、本発明の一態様の表示装置を適用することができる。
The display device of one embodiment of the present invention can be applied to the display portion 7000.
図２０（Ａ）に示すテレビジョン装置７１００の操作は、筐体７１０１が備える操作スイッチや、別体のリモコン操作機７１１１により行うことができる。または、表示部７０００にタッチセンサを備えていてもよく、指等で表示部７０００に触れることで操作してもよい。リモコン操作機７１１１は、当該リモコン操作機７１１１から出力する情報を表示する表示部を有していてもよい。リモコン操作機７１１１が備える操作キーまたはタッチパネルにより、チャンネル及び音量の操作を行うことができ、表示部７０００に表示される映像を操作することができる。
Operation of the television device 7100 illustrated in FIG. 20A can be performed with an operation switch included in the housing 7101 or a separate remote controller 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and may be operated by touching the display unit 7000 with a finger or the like. The remote controller 7111 may include a display unit that displays information output from the remote controller 7111. Channels and volume can be operated with an operation key or a touch panel included in the remote controller 7111, and an image displayed on the display portion 7000 can be operated.
なお、テレビジョン装置７１００は、受信機及びモデムなどを備えた構成とする。受信機により一般のテレビ放送の受信を行うことができる。また、モデムを介して有線または無線による通信ネットワークに接続することにより、一方向（送信者から受信者）または双方向（送信者と受信者間、あるいは受信者間同士など）の情報通信を行うことも可能である。
Note that the television device 7100 is provided with a receiver, a modem, and the like. A general television broadcast can be received by the receiver. In addition, by connecting to a wired or wireless communication network via a modem, information communication is performed in one direction (from the sender to the receiver) or in two directions (between the sender and the receiver or between the receivers). It is also possible.
図２０（Ｂ）に、ノート型パーソナルコンピュータの一例を示す。ノート型パーソナルコンピュータ７２００は、筐体７２１１、キーボード７２１２、ポインティングデバイス７２１３、外部接続ポート７２１４等を有する。筐体７２１１に、表示部７０００が組み込まれている。
FIG. 20B illustrates an example of a laptop personal computer. A laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display portion 7000 is incorporated in the housing 7211.
表示部７０００に、本発明の一態様の表示装置を適用することができる。
The display device of one embodiment of the present invention can be applied to the display portion 7000.
図２０（Ｃ）、（Ｄ）に、デジタルサイネージの一例を示す。
FIGS. 20C and 20D show examples of digital signage.
図２０（Ｃ）に示すデジタルサイネージ７３００は、筐体７３０１、表示部７０００、及びスピーカ７３０３等を有する。さらに、ＬＥＤランプ、操作キー（電源スイッチ、または操作スイッチを含む）、接続端子、各種センサ、マイクロフォン等を有することができる。
A digital signage 7300 illustrated in FIG. 20C includes a housing 7301, a display portion 7000, a speaker 7303, and the like. Furthermore, an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like can be provided.
図２０（Ｄ）は円柱状の柱７４０１に取り付けられたデジタルサイネージ７４００である。デジタルサイネージ７４００は、柱７４０１の曲面に沿って設けられた表示部７０００を有する。
FIG. 20D illustrates a digital signage 7400 attached to a columnar column 7401. The digital signage 7400 includes a display portion 7000 provided along the curved surface of the column 7401.
図２０（Ｃ）、（Ｄ）において、表示部７０００に、本発明の一態様の表示装置を適用することができる。
20C and 20D, the display device of one embodiment of the present invention can be applied to the display portion 7000.
表示部７０００が広いほど、一度に提供できる情報量を増やすことができる。また、表示部７０００が広いほど、人の目につきやすく、例えば、広告の宣伝効果を高めることができる。
The wider the display unit 7000, the more information can be provided at one time. In addition, the wider the display unit 7000, the more easily noticeable to the human eye. For example, the advertising effect can be enhanced.
表示部７０００にタッチパネルを適用することで、表示部７０００に画像または動画を表示するだけでなく、使用者が直感的に操作することができ、好ましい。また、路線情報もしくは交通情報などの情報を提供するための用途に用いる場合には、直感的な操作によりユーザビリティを高めることができる。
By applying a touch panel to the display unit 7000, not only an image or a moving image is displayed on the display unit 7000, but also a user can operate intuitively, which is preferable. In addition, when it is used for providing information such as route information or traffic information, usability can be improved by an intuitive operation.
また、図２０（Ｃ）、（Ｄ）に示すように、デジタルサイネージ７３００またはデジタルサイネージ７４００は、ユーザが所持するスマートフォン等の情報端末機７３１１または情報端末機７４１１と無線通信により連携可能であることが好ましい。例えば、表示部７０００に表示される広告の情報を、情報端末機７３１１または情報端末機７４１１の画面に表示させることができる。また、情報端末機７３１１または情報端末機７４１１を操作することで、表示部７０００の表示を切り替えることができる。
20C and 20D, the digital signage 7300 or the digital signage 7400 can be linked with the information terminal 7311 or the information terminal 7411 such as a smartphone possessed by the user by wireless communication. Is preferred. For example, advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Further, the display on the display unit 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.
また、デジタルサイネージ７３００またはデジタルサイネージ７４００に、情報端末機７３１１または情報端末機７４１１の画面を操作手段（コントローラ）としたゲームを実行させることもできる。これにより、不特定多数のユーザが同時にゲームに参加し、楽しむことができる。
Further, the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). Thereby, an unspecified number of users can participate and enjoy the game at the same time.
本実施の形態は、他の実施の形態と適宜組み合わせることができる。
This embodiment can be combined with any of the other embodiments as appropriate.
本実施例では、液晶パネルのＶ−Ｔ特性について、計算ソフトを用いて評価した結果について説明する。
In this embodiment, the results of evaluating the VT characteristics of a liquid crystal panel using calculation software will be described.
実施の形態２で説明した通り、液晶パネルは、電圧が変化しても階調ズレが生じにくいことが好ましい。その対策として、液晶素子における、電圧の変化量あたりの透過率の変化量を小さくすることが挙げられる。つまり、液晶素子におけるＶ−Ｔ特性の傾きを小さくすることが好ましい。
As described in Embodiment Mode 2, it is preferable that the liquid crystal panel is less likely to cause gradation shift even when the voltage changes. As a countermeasure, it is possible to reduce the change amount of transmittance per change amount of voltage in the liquid crystal element. That is, it is preferable to reduce the inclination of the VT characteristic in the liquid crystal element.
本実施例では、Ｓｈｉｎｔｅｃｈ社製ＬＣＤＭａｓｔｅｒ ２Ｄを用いて計算を行った。
In this example, calculation was performed using LCDMaster 2D manufactured by Shintech.
＜評価１＞
まず、液晶パネルの動作モードがＦＦＳモード、液晶材料がポジ型である場合について評価した。 <Evaluation 1>
First, the case where the operation mode of the liquid crystal panel was the FFS mode and the liquid crystal material was a positive type was evaluated.
まず、液晶パネルの動作モードがＦＦＳモード、液晶材料がポジ型である場合について評価した。 <
First, the case where the operation mode of the liquid crystal panel was the FFS mode and the liquid crystal material was a positive type was evaluated.
図１８（Ｂ３）に示す電極４１の幅Ｌを３μｍとし、電極４１のスリット幅（距離Ｓ）を４μｍとした。なお、電極４１と共通電極に挟持される絶縁層の厚さは、６００ｎｍとした。
The width L of the electrode 41 shown in FIG. 18B3 is 3 μm, and the slit width (distance S) of the electrode 41 is 4 μm. Note that the thickness of the insulating layer sandwiched between the electrode 41 and the common electrode was 600 nm.
図１８（Ｂ３）に示す、配向膜のラビング方向と電界の方向とがなす角度θｐが、それぞれ、５０°、６０°、７０°、８０°の場合のＶ−Ｔ特性を計算により求めた。
VT characteristics obtained when the angles θ p formed by the rubbing direction of the alignment film and the direction of the electric field shown in FIG. 18B3 are 50 °, 60 °, 70 °, and 80 °, respectively, were calculated. .
図２１に示すように、角度θｐが小さいほど、Ｖ−Ｔ特性の傾きは小さくなる傾向が確認された。また、角度θｐが小さすぎると、最大透過率が小さくなってしまうことが確認された。
As shown in FIG. 21, as the angle theta p is small, the slope of the V-T characteristic is reduced tendency was confirmed. Further, it was confirmed that the maximum transmittance is reduced when the angle θ p is too small.
＜評価２＞
次に、液晶パネルの動作モードがＦＦＳモード、液晶材料がネガ型である場合について評価した。 <Evaluation 2>
Next, the case where the operation mode of the liquid crystal panel was the FFS mode and the liquid crystal material was a negative type was evaluated.
次に、液晶パネルの動作モードがＦＦＳモード、液晶材料がネガ型である場合について評価した。 <
Next, the case where the operation mode of the liquid crystal panel was the FFS mode and the liquid crystal material was a negative type was evaluated.
図１８（Ｃ３）に示す電極４１の幅Ｌを３μｍとし、電極４１のスリット幅（距離Ｓ）を４μｍとした。なお、電極４１と共通電極とに挟持される絶縁層の厚さは、６００ｎｍとした。
The width L of the electrode 41 shown in FIG. 18 (C3) was 3 μm, and the slit width (distance S) of the electrode 41 was 4 μm. Note that the thickness of the insulating layer sandwiched between the electrode 41 and the common electrode was 600 nm.
図１８（Ｃ３）に示す、配向膜のラビング方向と電界の方向とがなす角度θｎが、それぞれ、１０°、２０°、３０°、４０°の場合のＶ−Ｔ特性を計算により求めた。
VT characteristics obtained when the angles θ n formed by the rubbing direction of the alignment film and the direction of the electric field shown in FIG. 18C3 are 10 °, 20 °, 30 °, and 40 °, respectively, were calculated. .
図２２に示すように、角度θｎが大きいほど、Ｖ−Ｔ特性の傾きは小さくなる傾向が確認された。また、角度θｎが大きすぎると、最大透過率が小さくなってしまうことが確認された。
As shown in FIG. 22, as the angle theta n is large, the gradient of V-T characteristic is reduced tendency was confirmed. In addition, it was confirmed that the maximum transmittance is reduced when the angle θ n is too large.
＜評価３＞
次に、液晶パネルの動作モードがＩＰＳモード、液晶材料がポジ型である場合について評価した。 <Evaluation 3>
Next, the case where the operation mode of the liquid crystal panel was an IPS mode and the liquid crystal material was a positive type was evaluated.
次に、液晶パネルの動作モードがＩＰＳモード、液晶材料がポジ型である場合について評価した。 <
Next, the case where the operation mode of the liquid crystal panel was an IPS mode and the liquid crystal material was a positive type was evaluated.
図１８（Ｂ１）に示す電極４１及び電極４３の幅Ｌをそれぞれ３μｍとし、電極４１と電極４３との間の距離Ｓを７μｍとした。
The width L of the electrode 41 and the electrode 43 shown in FIG. 18B1 is 3 μm, and the distance S between the electrode 41 and the electrode 43 is 7 μm.
図１８（Ｂ１）に示す、配向膜のラビング方向と電界の方向とがなす角度θｐが、それぞれ、５０°、６０°、７０°、８０°の場合のＶ−Ｔ特性を計算により求めた。
VT characteristics obtained when the angles θ p formed by the rubbing direction of the alignment film and the direction of the electric field shown in FIG. 18B1 are 50 °, 60 °, 70 °, and 80 °, respectively, were calculated. .
図２３に示すように、角度θｐが小さいほど、Ｖ−Ｔ特性の傾きは小さくなる傾向が確認された。また、角度θｐが小さすぎると、最大透過率が小さくなってしまうことが確認された。
As shown in FIG. 23, as the angle theta p is small, the slope of the V-T characteristic is reduced tendency was confirmed. Further, it was confirmed that the maximum transmittance is reduced when the angle θ p is too small.
本実施例の結果から、Ｖ−Ｔ特性の傾き、駆動電圧、応答速度等を考慮し、配向膜のラビング方向と電界の方向とがなす角度の好ましい範囲を検討した。液晶材料がポジ型である場合、角度θｐは、５０°より大きく８０°未満が好ましく、６０°以上８０°未満がより好ましく、６０°以上７０°以下がさらに好ましい。液晶材料がネガ型である場合、角度θｎは、１０°より大きく４０°未満が好ましく、２０°以上４０°未満がより好ましく、２０°以上３０°以下がさらに好ましい。
From the results of this example, the preferable range of the angle formed by the rubbing direction of the alignment film and the direction of the electric field was examined in consideration of the slope of the VT characteristic, the driving voltage, the response speed, and the like. When the liquid crystal material is a positive type, the angle theta p is preferably less than 80 ° greater than 50 °, more preferably less than 60 ° or 80 °, more preferably 60 ° to 70 ° or less. When the liquid crystal material is a negative type, the angle θ n is preferably greater than 10 ° and less than 40 °, more preferably 20 ° or more and less than 40 °, and further preferably 20 ° or more and 30 ° or less.
１０Ａ 液晶パネル
１０Ｂ 液晶パネル
１０Ｃ 液晶パネル
１０Ｄ 液晶パネル
１０Ｅ 液晶パネル
１０Ｆ 液晶パネル
１０Ｇ 液晶パネル
１０Ｈ 液晶パネル
１１ 基板
１２ 基板
１３ トランジスタ
１３ａ トランジスタ
１３ｂ トランジスタ
１４ 絶縁層
１６ 可撓性基板
２０Ａ 液晶パネル
２０Ｂ 液晶パネル
２０Ｃ 液晶パネル
２０Ｄ 液晶パネル
２０Ｅ 液晶パネル
２０Ｆ 液晶パネル
２０Ｇ 液晶パネル
２０Ｈ 液晶パネル
２１ 基板
２２ 基板
２３ トランジスタ
２３ａ トランジスタ
２３ｂ トランジスタ
２４ 絶縁層
２５ 導電層
２６ 可撓性基板
２７ 絶縁層
２９ 接続体
３０ バックライトユニット
３５ 光
３８ 遮光層
３９ 着色層
４０ 液晶素子
４０ａ 液晶素子
４０ｂ 液晶素子
４１ 電極
４１ａ 電極
４１ｂ 電極
４２ 液晶層
４２ｍ 液晶分子
４３ 電極
４３ａ 電極
４３ｂ 電極
４４ 絶縁層
４５ 液晶素子
４６ 電極
４７ 液晶層
４８ 電極
５０ 液晶素子
５１ 電極
５２ 液晶層
５３ 電極
６１ 偏光板
６２ 偏光板
６３ 偏光板
７１ 電極
７２ 電極
７３ 電極
７４ 絶縁層
７５ 絶縁層
８０Ａ 液晶パネル
８０Ｂ 液晶パネル
８０Ｃ 液晶パネル
８０Ｄ 液晶パネル
８０Ｅ 液晶パネル
８０Ｆ 液晶パネル
８１ａ 接着層
８１ｂ 接着層
８２ａ 絶縁層
８２ｂ 絶縁層
８５Ａ 液晶パネル
８５Ｂ 液晶パネル
８６Ａ 液晶パネル
８６Ｂ 液晶パネル
９０Ａ 液晶パネル
９０Ｂ 液晶パネル
９０Ｃ 液晶パネル
９０Ｄ 液晶パネル
９０Ｅ 液晶パネル
９０Ｆ 液晶パネル
１００Ａ 表示装置
１００Ｂ 表示装置
１００Ｃ 表示装置
１００Ｄ 表示装置
１００Ｅ 表示装置
１００Ｆ 表示装置
１００Ｇ 表示装置
１００Ｈ 表示装置
１１０Ａ タッチパネル
１１０Ｂ タッチパネル
１１１Ａ 液晶パネル
１１１Ｂ 液晶パネル
１１２Ａ 液晶パネル
１１２Ｂ 液晶パネル
１２１ オーバーコート
１３３ａ 配向膜
１３３ｂ 配向膜
１３３ｃ 配向膜
１３３ｄ 配向膜
１４１ａ 接着層
１４１ｂ 接着層
１６２ 表示部
１６４ 駆動回路部
１７２ａ ＦＰＣ
１７２ｂ ＦＰＣ
２００Ａ 表示装置
２００Ｂ 表示装置
２００Ｃ 表示装置
２００Ｄ 表示装置
２００Ｅ 表示装置
２００Ｆ 表示装置
２０１ａ トランジスタ
２０１ｂ トランジスタ
２０１ｃ トランジスタ
２０１ｄ トランジスタ
２１０Ａ タッチパネル
２１０Ｂ タッチパネル
２１１ 絶縁層
２１２ 絶縁層
２１３ 絶縁層
２１５ 絶縁層
２１７ 絶縁層
２１８ 絶縁層
２２１ 導電層
２２２ａ 導電層
２２２ｂ 導電層
２２２ｃ 配線
２２３ 導電層
２２５ 絶縁層
２３１ 半導体層
２３２ 不純物半導体層
２４２ａ 接続体
２４２ｂ 接続体
２５１ 導電層
６００ テレビジョン装置
６０１ 制御部
６０２ 記憶部
６０３ 通信制御部
６０４ 画像処理回路
６０５ デコーダ回路
６０６ 映像信号受信部
６０７ タイミングコントローラ
６０８ ソースドライバ
６０９ ゲートドライバ
６１０ ニューラルネットワーク
６１１ 入力層
６１２ 中間層
６１３ 出力層
６１５ ニューロン
６２０ 表示パネル
６２１ 画素
６３０ システムバス
６４７ タイミングコントローラ
６４８ ソースドライバ
６４９ ゲートドライバ
６５０ 調光パネル
６５１ 画素
７０００ 表示部
７１００ テレビジョン装置
７１０１ 筐体
７１０３ スタンド
７１１１ リモコン操作機
７２００ ノート型パーソナルコンピュータ
７２１１ 筐体
７２１２ キーボード
７２１３ ポインティングデバイス
７２１４ 外部接続ポート
７３００ デジタルサイネージ
７３０１ 筐体
７３０３ スピーカ
７３１１ 情報端末機
７４００ デジタルサイネージ
７４０１ 柱
７４１１ 情報端末機 10A liquid crystal panel 10B liquid crystal panel 10C liquid crystal panel 10D liquid crystal panel 10E liquid crystal panel 10F liquid crystal panel 10G liquid crystal panel 10H liquid crystal panel 11 substrate 12 substrate 13 transistor 13a transistor 13b transistor 14 insulating layer 16 flexible substrate 20A liquid crystal panel 20B liquid crystal panel 20C liquid crystal Panel 20D Liquid crystal panel 20E Liquid crystal panel 20F Liquid crystal panel 20G Liquid crystal panel 20H Liquid crystal panel 21 Substrate 22 Substrate 22 Substrate 23 Transistor 23a Transistor 23b Transistor 24 Insulating layer 25 Conductive layer 26 Flexible substrate 27 Insulating layer 29 Connector 30 Backlight unit 35 Light 38 Light shielding layer 39 Colored layer 40 Liquid crystal element 40a Liquid crystal element 40b Liquid crystal element 41 Electrode 41a Electrode 41b Electrode 42 Liquid crystal layer 42m Liquid Molecule 43 electrode 43a electrode 43b electrode 44 insulating layer 45 liquid crystal element 46 electrode 47 liquid crystal layer 48 electrode 50 liquid crystal element 51 electrode 52 liquid crystal layer 53 electrode 61 polarizing plate 62 polarizing plate 63 polarizing plate 71 electrode 72 electrode 73 electrode 74 insulating layer 75 insulating Layer 80A liquid crystal panel 80B liquid crystal panel 80C liquid crystal panel 80D liquid crystal panel 80E liquid crystal panel 80F liquid crystal panel 81a adhesive layer 81b adhesive layer 82a insulating layer 82b liquid crystal panel 85B liquid crystal panel 86A liquid crystal panel 86B liquid crystal panel 90A liquid crystal panel 90B liquid crystal panel 90C Liquid crystal panel 90D Liquid crystal panel 90E Liquid crystal panel 90F Liquid crystal panel 100A Display device 100B Display device 100C Display device 100D Display device 100E Display device 100F Display device 100G Table Apparatus 100H display device 110A touch panel 110B panel 111A crystal panel 111B crystal panel 112A crystal panel 112B crystal panel 121 overcoat 133a alignment film 133b alignment film 133c alignment film 133d alignment film 141a adhesive layer 141b adhesive layer 162 display unit 164 the driver circuit portion 172a FPC
172b FPC
200A display device 200B display device 200C display device 200D display device 200E display device 200F display device 201a transistor 201b transistor 201c transistor 201d transistor 210A touch panel 210B touch panel 211 insulating layer 212 insulating layer 213 insulating layer 215 insulating layer 217 insulating layer 218 insulating layer 221 conductive Layer 222a conductive layer 222b conductive layer 222c wiring 223 conductive layer 225 insulating layer 231 semiconductor layer 232 impurity semiconductor layer 242a connector 242b connector 251 conductive layer 600 television device 601 controller 602 storage 603 communication controller 604 image processing circuit 605 Decoder circuit 606 Video signal receiver 607 Timing controller 608 Source driver 609 Gate Driver 610 Neural network 611 Input layer 612 Intermediate layer 613 Output layer 615 Neuron 620 Display panel 621 Pixel 630 System bus 647 Timing controller 648 Source driver 649 Gate driver 650 Dimming panel 651 Pixel 7000 Display unit 7100 Television apparatus 7101 Housing 7103 Stand 7111 Remote controller 7200 Notebook personal computer 7211 Case 7212 Keyboard 7213 Pointing device 7214 External connection port 7300 Digital signage 7301 Case 7303 Speaker 7311 Information terminal 7400 Digital signage 7401 Pillar 7411 Information terminal
１０Ｂ 液晶パネル
１０Ｃ 液晶パネル
１０Ｄ 液晶パネル
１０Ｅ 液晶パネル
１０Ｆ 液晶パネル
１０Ｇ 液晶パネル
１０Ｈ 液晶パネル
１１ 基板
１２ 基板
１３ トランジスタ
１３ａ トランジスタ
１３ｂ トランジスタ
１４ 絶縁層
１６ 可撓性基板
２０Ａ 液晶パネル
２０Ｂ 液晶パネル
２０Ｃ 液晶パネル
２０Ｄ 液晶パネル
２０Ｅ 液晶パネル
２０Ｆ 液晶パネル
２０Ｇ 液晶パネル
２０Ｈ 液晶パネル
２１ 基板
２２ 基板
２３ トランジスタ
２３ａ トランジスタ
２３ｂ トランジスタ
２４ 絶縁層
２５ 導電層
２６ 可撓性基板
２７ 絶縁層
２９ 接続体
３０ バックライトユニット
３５ 光
３８ 遮光層
３９ 着色層
４０ 液晶素子
４０ａ 液晶素子
４０ｂ 液晶素子
４１ 電極
４１ａ 電極
４１ｂ 電極
４２ 液晶層
４２ｍ 液晶分子
４３ 電極
４３ａ 電極
４３ｂ 電極
４４ 絶縁層
４５ 液晶素子
４６ 電極
４７ 液晶層
４８ 電極
５０ 液晶素子
５１ 電極
５２ 液晶層
５３ 電極
６１ 偏光板
６２ 偏光板
６３ 偏光板
７１ 電極
７２ 電極
７３ 電極
７４ 絶縁層
７５ 絶縁層
８０Ａ 液晶パネル
８０Ｂ 液晶パネル
８０Ｃ 液晶パネル
８０Ｄ 液晶パネル
８０Ｅ 液晶パネル
８０Ｆ 液晶パネル
８１ａ 接着層
８１ｂ 接着層
８２ａ 絶縁層
８２ｂ 絶縁層
８５Ａ 液晶パネル
８５Ｂ 液晶パネル
８６Ａ 液晶パネル
８６Ｂ 液晶パネル
９０Ａ 液晶パネル
９０Ｂ 液晶パネル
９０Ｃ 液晶パネル
９０Ｄ 液晶パネル
９０Ｅ 液晶パネル
９０Ｆ 液晶パネル
１００Ａ 表示装置
１００Ｂ 表示装置
１００Ｃ 表示装置
１００Ｄ 表示装置
１００Ｅ 表示装置
１００Ｆ 表示装置
１００Ｇ 表示装置
１００Ｈ 表示装置
１１０Ａ タッチパネル
１１０Ｂ タッチパネル
１１１Ａ 液晶パネル
１１１Ｂ 液晶パネル
１１２Ａ 液晶パネル
１１２Ｂ 液晶パネル
１２１ オーバーコート
１３３ａ 配向膜
１３３ｂ 配向膜
１３３ｃ 配向膜
１３３ｄ 配向膜
１４１ａ 接着層
１４１ｂ 接着層
１６２ 表示部
１６４ 駆動回路部
１７２ａ ＦＰＣ
１７２ｂ ＦＰＣ
２００Ａ 表示装置
２００Ｂ 表示装置
２００Ｃ 表示装置
２００Ｄ 表示装置
２００Ｅ 表示装置
２００Ｆ 表示装置
２０１ａ トランジスタ
２０１ｂ トランジスタ
２０１ｃ トランジスタ
２０１ｄ トランジスタ
２１０Ａ タッチパネル
２１０Ｂ タッチパネル
２１１ 絶縁層
２１２ 絶縁層
２１３ 絶縁層
２１５ 絶縁層
２１７ 絶縁層
２１８ 絶縁層
２２１ 導電層
２２２ａ 導電層
２２２ｂ 導電層
２２２ｃ 配線
２２３ 導電層
２２５ 絶縁層
２３１ 半導体層
２３２ 不純物半導体層
２４２ａ 接続体
２４２ｂ 接続体
２５１ 導電層
６００ テレビジョン装置
６０１ 制御部
６０２ 記憶部
６０３ 通信制御部
６０４ 画像処理回路
６０５ デコーダ回路
６０６ 映像信号受信部
６０７ タイミングコントローラ
６０８ ソースドライバ
６０９ ゲートドライバ
６１０ ニューラルネットワーク
６１１ 入力層
６１２ 中間層
６１３ 出力層
６１５ ニューロン
６２０ 表示パネル
６２１ 画素
６３０ システムバス
６４７ タイミングコントローラ
６４８ ソースドライバ
６４９ ゲートドライバ
６５０ 調光パネル
６５１ 画素
７０００ 表示部
７１００ テレビジョン装置
７１０１ 筐体
７１０３ スタンド
７１１１ リモコン操作機
７２００ ノート型パーソナルコンピュータ
７２１１ 筐体
７２１２ キーボード
７２１３ ポインティングデバイス
７２１４ 外部接続ポート
７３００ デジタルサイネージ
７３０１ 筐体
７３０３ スピーカ
７３１１ 情報端末機
７４００ デジタルサイネージ
７４０１ 柱
７４１１ 情報端末機 10A liquid crystal panel 10B liquid crystal panel 10C liquid crystal panel 10D liquid crystal panel 10E liquid crystal panel 10F liquid crystal panel 10G liquid crystal panel 10H liquid crystal panel 11 substrate 12 substrate 13 transistor 13a transistor 13b transistor 14 insulating layer 16 flexible substrate 20A liquid crystal panel 20B liquid crystal panel 20C liquid crystal Panel 20D Liquid crystal panel 20E Liquid crystal panel 20F Liquid crystal panel 20G Liquid crystal panel 20H Liquid crystal panel 21 Substrate 22 Substrate 22 Substrate 23 Transistor 23a Transistor 23b Transistor 24 Insulating layer 25 Conductive layer 26 Flexible substrate 27 Insulating layer 29 Connector 30 Backlight unit 35 Light 38 Light shielding layer 39 Colored layer 40 Liquid crystal element 40a Liquid crystal element 40b Liquid crystal element 41 Electrode 41a Electrode 41b Electrode 42 Liquid crystal layer 42m Liquid Molecule 43 electrode 43a electrode 43b electrode 44 insulating layer 45 liquid crystal element 46 electrode 47 liquid crystal layer 48 electrode 50 liquid crystal element 51 electrode 52 liquid crystal layer 53 electrode 61 polarizing plate 62 polarizing plate 63 polarizing plate 71 electrode 72 electrode 73 electrode 74 insulating layer 75 insulating Layer 80A liquid crystal panel 80B liquid crystal panel 80C liquid crystal panel 80D liquid crystal panel 80E liquid crystal panel 80F liquid crystal panel 81a adhesive layer 81b adhesive layer 82a insulating layer 82b liquid crystal panel 85B liquid crystal panel 86A liquid crystal panel 86B liquid crystal panel 90A liquid crystal panel 90B liquid crystal panel 90C Liquid crystal panel 90D Liquid crystal panel 90E Liquid crystal panel 90F Liquid crystal panel 100A Display device 100B Display device 100C Display device 100D Display device 100E Display device 100F Display device 100G Table Apparatus 100H display device 110A touch panel 110B panel 111A crystal panel 111B crystal panel 112A crystal panel 112B crystal panel 121 overcoat 133a alignment film 133b alignment film 133c alignment film 133d alignment film 141a adhesive layer 141b adhesive layer 162 display unit 164 the driver circuit portion 172a FPC
172b FPC
Claims (15)
- 第１の液晶パネル、第２の液晶パネル、第１の偏光板、第２の偏光板、及び第３の偏光板を有し、
前記第１の液晶パネルは、前記第１の偏光板と前記第２の偏光板の間に位置し、
前記第２の液晶パネルは、前記第２の偏光板と前記第３の偏光板の間に位置し、
前記第２の液晶パネルには、前記第１の液晶パネルを透過した光が、前記第２の偏光板を介して入射し、
前記第２の液晶パネルは、前記光を選択的に透過することで、画像を表示し、
前記第１の液晶パネルと前記第２の液晶パネルとは、互いに異なるモードで動作し、
前記第１の偏光板と前記第２の偏光板とは、第１の方向の偏光軸を有し、
前記第３の偏光板は、前記第１の方向と交差する第２の方向の偏光軸を有する、表示装置。 Having a first liquid crystal panel, a second liquid crystal panel, a first polarizing plate, a second polarizing plate, and a third polarizing plate;
The first liquid crystal panel is located between the first polarizing plate and the second polarizing plate,
The second liquid crystal panel is located between the second polarizing plate and the third polarizing plate,
The light transmitted through the first liquid crystal panel is incident on the second liquid crystal panel through the second polarizing plate,
The second liquid crystal panel displays an image by selectively transmitting the light,
The first liquid crystal panel and the second liquid crystal panel operate in different modes,
The first polarizing plate and the second polarizing plate have a polarization axis in a first direction,
The display device, wherein the third polarizing plate has a polarization axis in a second direction intersecting the first direction. - 請求項１において、
前記第１の液晶パネルは、ＴＮモードで動作し、
前記第２の液晶パネルは、ＩＰＳモードまたはＦＦＳモードで動作する、表示装置。 In claim 1,
The first liquid crystal panel operates in a TN mode,
The display device in which the second liquid crystal panel operates in an IPS mode or an FFS mode. - 請求項１または２において、
前記第２の液晶パネルは、タッチセンサの機能を有する、表示装置。 In claim 1 or 2,
The second liquid crystal panel is a display device having a touch sensor function. - 請求項１または２において、
前記第１の液晶パネルは、第１の基板及び第２の基板を有し、
前記第２の液晶パネルは、第３の基板及び第４の基板を有し、
前記第２の偏光板は、前記第２の基板と前記第３の基板との間に位置し、
前記第２の基板は、前記第１の基板よりも、前記第２の液晶パネル側に位置し、
前記第３の基板は、前記第４の基板よりも、前記第１の液晶パネル側に位置し、
前記第２の基板の厚さは、前記第１の基板の厚さよりも薄く、
前記第３の基板の厚さは、前記第４の基板の厚さよりも薄い、表示装置。 In claim 1 or 2,
The first liquid crystal panel has a first substrate and a second substrate,
The second liquid crystal panel has a third substrate and a fourth substrate,
The second polarizing plate is located between the second substrate and the third substrate,
The second substrate is located closer to the second liquid crystal panel than the first substrate,
The third substrate is located closer to the first liquid crystal panel than the fourth substrate,
The thickness of the second substrate is thinner than the thickness of the first substrate,
The display device, wherein a thickness of the third substrate is thinner than a thickness of the fourth substrate. - 請求項４において、
前記第２の基板及び前記第３の基板は、それぞれ、樹脂を有する、表示装置。 In claim 4,
Each of the second substrate and the third substrate includes a resin. - 請求項１または２において、
前記第２の液晶パネルは、一対の配向膜の間に液晶層を有し、
前記液晶層は、誘電異方性が正である液晶材料を有し、
前記一対の配向膜の少なくとも一方のラビング方向と電界の方向とがなす角度は、５０°より大きく８０°未満である、表示装置。 In claim 1 or 2,
The second liquid crystal panel has a liquid crystal layer between a pair of alignment films,
The liquid crystal layer has a liquid crystal material having positive dielectric anisotropy,
The display device, wherein an angle formed by at least one rubbing direction of the pair of alignment films and an electric field direction is greater than 50 ° and less than 80 °. - 請求項１または２において、
前記第２の液晶パネルは、一対の配向膜の間に液晶層を有し、
前記液晶層は、誘電異方性が負である液晶材料を有し、
前記一対の配向膜の少なくとも一方のラビング方向と電界の方向とがなす角度は、１０°より大きく４０°未満である、表示装置。 In claim 1 or 2,
The second liquid crystal panel has a liquid crystal layer between a pair of alignment films,
The liquid crystal layer has a liquid crystal material having negative dielectric anisotropy,
The display device, wherein an angle formed by at least one rubbing direction of the pair of alignment films and an electric field direction is greater than 10 ° and less than 40 °. - 請求項１または２において、
前記表示装置のコントラスト比は、１０００００：１以上である、表示装置。 In claim 1 or 2,
The display device has a contrast ratio of 100,000: 1 or more. - 請求項１または２において、
前記第２の液晶パネルは、４Ｋ以上の解像度を有する、表示装置。 In claim 1 or 2,
The second liquid crystal panel is a display device having a resolution of 4K or more. - 請求項１または２において、
前記第２の液晶パネルは、１２ビット以上のカラーを表示する機能を有する、表示装置。 In claim 1 or 2,
The second liquid crystal panel is a display device having a function of displaying a color of 12 bits or more. - 請求項１または２において、
前記第２の液晶パネルのフレーム周波数は、１２０Ｈｚ以上である、表示装置。 In claim 1 or 2,
The display device, wherein a frame frequency of the second liquid crystal panel is 120 Hz or more. - 請求項１または２において、
前記第２の液晶パネルは、アクティブマトリクス型であり、
前記第２の液晶パネルは、液晶素子とトランジスタとを有し、
前記トランジスタは、前記液晶素子と電気的に接続され、
前記トランジスタのチャネル形成領域は、金属酸化物を有する、表示装置。 In claim 1 or 2,
The second liquid crystal panel is an active matrix type,
The second liquid crystal panel has a liquid crystal element and a transistor,
The transistor is electrically connected to the liquid crystal element;
The display device in which a channel formation region of the transistor includes a metal oxide. - 請求項１または２において、
前記第２の液晶パネルは、アクティブマトリクス型であり、
前記第２の液晶パネルは、液晶素子とトランジスタとを有し、
前記トランジスタは、前記液晶素子と電気的に接続され、
前記トランジスタのチャネル形成領域は、水素化アモルファスシリコンを有する、表示装置。 In claim 1 or 2,
The second liquid crystal panel is an active matrix type,
The second liquid crystal panel has a liquid crystal element and a transistor,
The transistor is electrically connected to the liquid crystal element;
The display device, wherein a channel formation region of the transistor includes hydrogenated amorphous silicon. - 請求項１または２に記載の表示装置と、
回路基板と、を有する表示モジュール。 A display device according to claim 1 or 2,
A display module. - 請求項１４に記載の表示モジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、または操作ボタンの少なくともいずれか一と、を有する、電子機器。 A display module according to claim 14;
An electronic device having at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-060455 | 2017-03-27 | ||
| JP2017060455 | 2017-03-27 |
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| WO2018178795A1 true WO2018178795A1 (en) | 2018-10-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| PCT/IB2018/051757 WO2018178795A1 (en) | 2017-03-27 | 2018-03-16 | Display device, display module, and electronic apparatus |
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| WO (1) | WO2018178795A1 (en) |
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| CN113075812A (en) * | 2020-07-27 | 2021-07-06 | 友达光电股份有限公司 | Display device |
| WO2022083312A1 (en) * | 2020-10-19 | 2022-04-28 | 京东方科技集团股份有限公司 | Display module and manufacturing method therefor, and display device |
| US20230339297A1 (en) * | 2019-12-23 | 2023-10-26 | Oviation B.V. | Transparent sun visor for vehicles |
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| US11231613B1 (en) * | 2020-07-27 | 2022-01-25 | Au Optronics Corporation | Display apparatus |
| WO2022083312A1 (en) * | 2020-10-19 | 2022-04-28 | 京东方科技集团股份有限公司 | Display module and manufacturing method therefor, and display device |
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