WO2018177668A1 - Appareil, manipulateur de substrat, manipulateur de dispositif de modelage, système d'amortissement et procédé de fabrication d'un système d'amortissement - Google Patents

Appareil, manipulateur de substrat, manipulateur de dispositif de modelage, système d'amortissement et procédé de fabrication d'un système d'amortissement Download PDF

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Publication number
WO2018177668A1
WO2018177668A1 PCT/EP2018/054871 EP2018054871W WO2018177668A1 WO 2018177668 A1 WO2018177668 A1 WO 2018177668A1 EP 2018054871 W EP2018054871 W EP 2018054871W WO 2018177668 A1 WO2018177668 A1 WO 2018177668A1
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WO
WIPO (PCT)
Prior art keywords
mass
spring
eigenmode
damping
substrate
Prior art date
Application number
PCT/EP2018/054871
Other languages
English (en)
Inventor
Mathijs Leonardus Johan VERHEES
Eric Pierre-Yves VENNAT
Martijn VAN DORDRECHT
Francois-Xavier DEBIESME
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2018177668A1 publication Critical patent/WO2018177668A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F7/00—Vibration-dampers; Shock-absorbers
    • F16F7/10—Vibration-dampers; Shock-absorbers using inertia effect
    • F16F7/104—Vibration-dampers; Shock-absorbers using inertia effect the inertia member being resiliently mounted
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box

Definitions

  • the present invention relates to an apparatus comprising a structure having a first eigenmode and a second eigenmode and a damping system to dampen both the first and second eigenmodes.
  • the invention further relates to such an apparatus being a lithographic apparatus, a substrate handler, and a patterning device handler.
  • the invention relates further to a damping system for use in such an apparatus and a device manufacturing method.
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g. including part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • resist radiation-sensitive material
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • Conventional lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at once, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the "scanning"-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
  • Lithographic apparatus comprise structures that are either movable or stationary, but which may have eigenmodes that need to be damped by a damping system to increase the obtainable accuracy of the lithographic apparatus. Both active damping devices and tuned damping devices are a well-known way of providing damping to a structure.
  • an apparatus comprising:
  • a damping system comprising a first mass, a first damping device, a first spring, a second mass, a second damping device and a second spring,
  • first mass is connected to the structure using the first damping device and the first spring
  • second mass is connected to the first mass using the second damping device and the second spring
  • damping system is arranged to dampen the first eigenmode by movement of the first mass and the second mass, and is arranged to dampen the second eigenmode by movement of the second mass.
  • a substrate handler configured for use in an apparatus according to the invention.
  • a patterning device handler configured for use in an apparatus according to the invention.
  • a first spring, a first damping device, a first mass, a second spring, a second damping device and a second mass based on information of a first eigenmode and a second eigenmode of a structure; - coupling the first mass to an interface element via the first spring and the first damping device, wherein the interface element is arranged to be coupled to the structure;
  • the damping system is arranged to dampen the first eigenmode by movement the first mass and the second mass, and wherein the damping system is arranged to dampen the second eigenmode by movement of the second mass.
  • Figure 1 depicts a lithographic apparatus according to an embodiment of the invention
  • Figure 2 schematically depicts a structure of the lithographic apparatus of Fig. 1 and corresponding damping system according to an embodiment of the invention
  • FIG. 3 schematically depicts a damping system when only the first eigenmode of the structure of Fig. 2 is excited;
  • Figure 4 schematically depicts a damping system when only the second eigenmode of the structure of Fig. 2 is excited;
  • Figure 5 schematically depicts a top view of a structure and corresponding damping system according to another embodiment of the invention.
  • Figure 6 schematically depicts a side view of the structure and corresponding damping system of Fig.
  • Figure 7 schematically depicts another side view of the structure and corresponding damping system of Fig. 5.
  • Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention.
  • the apparatus comprises:
  • an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. UV radiation or EUV radiation).
  • a radiation beam B e.g. UV radiation or EUV radiation.
  • a support structure e.g. a mask table
  • MT constructed to support a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters;
  • a substrate table e.g. a wafer table
  • WTa or WTb constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, and/or controlling radiation.
  • the support structure MT supports, i.e. bears the weight of, the patterning device MA. It holds the patterning device MA in a manner that depends on the orientation of the patterning device MA, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device MA is held in a vacuum environment.
  • the support structure MT can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA.
  • the support structure MT may be a frame or a table, for example, which may be fixed or movable as required.
  • the support structure MT may ensure that the patterning device MA is at a desired position, for example with respect to the projection system PS. Any use of the terms "reticle” or “mask” herein may be considered synonymous with the more general term "patterning device.”
  • patterning device used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate W. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate W, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning device MA may be transmissive or reflective.
  • Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
  • UV radiation e.g. having a wavelength of or about 365, 248, 193, 157 or 126 nm
  • EUV radiation e.g. having a wavelength in the range of 5-20nm
  • particle beams such as ion beams or electron beams.
  • projection system used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
  • the apparatus is of a transmissive type (e.g. employing a transmissive mask).
  • the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such "multiple stage" machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the two substrate tables WTa and WTb in the example of Figure 1 are an illustration of this.
  • the invention disclosed herein can be used in a stand-alone fashion, but in particular it can provide additional functions in the pre -exposure measurement stage of either single- or multi-stage apparatuses.
  • the lithographic apparatus may also be of a type wherein at least a portion of the substrate W may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system PS and the substrate W.
  • a liquid having a relatively high refractive index e.g. water
  • An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the patterning device MA and the projection system PS. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
  • immersion as used herein does not mean that a structure, such as a substrate W, must be submerged in liquid, but rather only means that liquid is located between the projection system PS and the substrate W during exposure.
  • the illuminator IL receives a radiation beam from a radiation source SO.
  • the radiation source SO and the lithographic apparatus may be separate entities, for example when the radiation source SO is an excimer laser. In such cases, the radiation source SO is not considered to form part of the lithographic apparatus and the radiation beam is passed from the radiation source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp.
  • the radiation source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted.
  • the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • the radiation beam B is incident on the patterning device MA (e.g., mask), which is held on the support structure MT (e.g., mask table), and is patterned by the patterning device MA. Having traversed the patterning device MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WTa/WTb can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B.
  • the first positioner PM and another position sensor can be used to accurately position the patterning device MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a mask library, or during a scan.
  • movement of the support structure MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM.
  • movement of the substrate table WTaAVTb may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW.
  • the support structure MT may be connected to a short-stroke actuator only, or may be fixed.
  • Patterning device MA and substrate W may be aligned using mask alignment marks Ml, M2 and substrate alignment marks PI, P2.
  • the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks).
  • the mask alignment marks Ml, M2 may be located between the dies.
  • the depicted apparatus can at least be used in scan mode, in which the support structure MT and the substrate table WTaAVTb are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure).
  • the velocity and direction of the substrate table WTaAVTb relative to the support structure MT may be determined by the (de)-magnification and image reversal characteristics of the projection system PS.
  • the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
  • the depicted apparatus could be used in at least one of the following modes:
  • step mode the support structure MT and the substrate table WTaAVTb are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure).
  • the substrate table WTaAVTb is then shifted in the X and/or Y direction so that a different target portion C can be exposed.
  • step mode the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
  • the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WTa/WTb is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C.
  • a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WTa/WTb or in between successive radiation pulses during a scan.
  • This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
  • Lithographic apparatus LA is of a so-called dual stage type which has two substrate tables WTa and WTb and two stations - an exposure station and a measurement station- between which the substrate tables can be exchanged. While one substrate on one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station so that various preparatory steps may be carried out.
  • the preparatory steps may include mapping the surface of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS. This enables a substantial increase in the throughput of the apparatus. If the position sensor IF is not capable of measuring the position of the substrate table while it is at the measurement station as well as at the exposure station, a second position sensor may be provided to enable the positions of the substrate table to be tracked at both stations.
  • the apparatus further includes a lithographic apparatus control unit LACU which controls all the movements and measurements of the various actuators and sensors described.
  • Control unit LACU also includes signal processing and data processing capacity to implement desired calculations relevant to the operation of the apparatus.
  • control unit LACU will be realized as a system of many sub-units, each handling the real-time data acquisition, processing and control of a subsystem or component within the apparatus.
  • one processing subsystem may be dedicated to servo control of the substrate positioner PW. Separate units may even handle coarse and fine actuators, or different axes.
  • Another unit might be dedicated to the readout of the position sensor IF.
  • Overall control of the apparatus may be controlled by a central processing unit, communicating with these sub-systems processing units, with operators and with other apparatuses involved in the lithographic manufacturing process.
  • Fig. 2 schematically depicts a structure S of the lithographic apparatus of Fig. 1.
  • the structure S may be or comprise a substrate handler configured to provide substrates W to the substrate table WT, a patterning device handler configured to provide patterning devices MA to the support structure MT (further referred to as support MT), or the projection system PS, or parts thereof.
  • a damping system DS comprises a first mass FM, a first damping device DDI, a first spring FS, a second mass SM, a second damping device DD2, and a second spring SS.
  • the first mass FM is connected to the structure S using the first damping device DDI and the first spring FS.
  • the second mass SM is connected to the first mass FM using the second damping device DD2 and the second spring SS.
  • the second mass SM is connected to the structure S via the first mass FM.
  • the first mass FM is connected to the structure S.
  • the first mass FM may be directly connected to the structure S via the first spring FS and the first damping device DDI, or an interface element may be provided.
  • the interface element may be connected to the first damping device DDI and the first spring FS.
  • the interface element may be arranged to be coupled to the structure S, so as to couple the first damping device DDI and the first spring FS to the structure S.
  • the first eigenmode of the structure S has a corresponding mode shape such that the structure S at the location LO will vibrate in a first direction with a first eigenfrequency when the first eigenmode is excited.
  • the second eigenmode of the structure S further has a corresponding mode shape such the structure S at the location LO will vibrate in a second direction with a second eigenfrequency when the second eigenmode is excited.
  • the damping system DS is arranged to dampen the first eigenmode by movement of the first mass FM and the second mass SM, and arranged to dampen the second eigenmode by movement of the second mass SM.
  • the first mass FM may be not moving, may be stationary or may be stationary relative to the structure S.
  • first direction and the second direction are non-parallel to each other, e.g. orthogonal to each other.
  • the first and second eigenfrequency may be equal or close to each other, but may also be significantly different.
  • the first and second eigenmode are assumed to be limiting the obtainable accuracy of the lithographic apparatus if no appropriate measures are taken as described in relationship to the current invention.
  • the first damping device DDI and the first spring FS are configured to act in the first direction.
  • the second damping device DD2 and the second spring SS are configured to act in the second direction in order to dampen the second eigenmode.
  • the single mass FM+SM may move as a tuned-mass-damper.
  • the single mass FM+SM may move in anti-phase with the first eigenmode to dampen the first eigenmode.
  • the movement in anti-phase may be achieved by selection of the first spring FS, the first damping device DDI, the second spring SS, the second damping device DD2, the first mass FM and the second mass SM.
  • the second mass SM may move as a tuned-mass-damper.
  • the second mass SM may move in anti-phase with the second eigenmode to dampen the second eigenmode.
  • the movement in anti-phase may be achieved by selection of the first spring FS, the first damping device DDI, the second spring SS, the second damping device DD2, the first mass FM and the second mass SM.
  • An advantage of the damping system according to the invention is that the first mass FM and second mass SM are connected to the structure S in series instead of parallel as in the prior art.
  • the first eigenmode is damped using the first mass FM and the second eigenmode is damped using the second mass SM
  • the first eigenmode can now, in case of the damping system according to the invention, be damped using both the first and second mass FM, SM while the total mass FM+SM has not been increased and no additional volume has been used.
  • damping is optimized without using more space.
  • the first damping device DDI comprises a damper such that the combination of first and second mass FM, SM, said damper and the first spring FS is tuned to the first eigenmode as in a tuned mass damping system.
  • the first damping device DDI may be an active damping device.
  • the second damping device DD2 comprises a further damper such that the combination of second mass SM, the further damper and the second spring SS is tuned to the second eigenmode as in a tuned mass damping system.
  • the second damping device DD2 may be an active damping device.
  • the first mass and/or the second mass FM, SM comprises a non-structural part of the structure S.
  • a non-structural part of the structure S is a part of the structure that has no substantial contribution to the strength or rigidity of the structure S and thus could be removed without compromising the mechanical function and integrity of the structure S.
  • Examples of non-structural parts of the structure are electronics, power supplies and/or their housings mounted to the structure S, which non-structural parts can be used as damping mass in the damping system DS according to the invention.
  • the invention can be applied to the situation in which the first and second direction are parallel to each other, but the first eigenfrequency is substantially different from the second eigenfrequency.
  • the first spring FS and the second spring SS may each be implemented as a helical spring, a leaf spring or any other suitable shape.
  • the first spring FS may have the same shape as the second spring SS.
  • the first spring FS may have the same shape as the second spring SS with different dimensions than the second spring SS.
  • the first spring FS may have a different shape than the second spring SS.
  • the first spring FS may be implemented as a single spring element, or as a plurality of spring elements.
  • the first spring FS may comprises two leaf springs parallel to each other, wherein the main surfaces of the two leaf springs face each other at an offset. This way, the first spring FS may be flexible in one degree of freedom, while being substantially rigid in all other degrees of freedom.
  • the first spring FS and the first damping device DDI are depicted as two separate components.
  • the first spring FS and the first damping device DDI are integrated as a single component.
  • the first damping device DDI may be applied as a coating on the first spring FS.
  • the coating may comprise an elastomer or a rubber or any other type of material with damping properties.
  • Figs. 5 to 7 schematically depict a top view, a side view and another side view, respectively, of a structure S and a damping system DS according to another embodiment of the invention.
  • the structure S may be a component or part thereof of the lithographic apparatus of Fig. 1.
  • the damping system DS comprises a first mass FM, a second mass SM, wherein the first mass FM is connected to the structure S via four leaf springs DFS, and wherein the second mass SM is connected to the first mass FM via leaf springs DSS.
  • the second mass SM is rigidly connected to the leaf springs DSS using connection beams CB.
  • the leaf springs DFS are coated or provided with energy dissipating elements, such as rubber, so that they simultaneously provide a spring function and a damping function.
  • the leaf springs DFS combine a first spring FS and a first damping device DDI and may also be referred to as damped first springs DFS.
  • the leaf springs DSS are in this embodiment also coated or provided with energy dissipating elements, such as rubber, so that the simultaneously provide a spring function and a damping function.
  • the leaf springs DSS combine a second spring and a second damping device and may also be referred to as damped second springs DSS.
  • the damped first springs DFS are configured to allow movement of the first mass FM in Y-direction and to be rigid in the X-direction and Z-direction.
  • the damped second springs DSS are configured to allow movement of the second mass SM in Z-direction and to be rigid in the X-direction and the Y-direction.
  • the second mass SM follows the movement of the first mass FM, so that the combined first and second mass FM, SM can be used to damp motion of the structure S in the Y-direction using the damped first springs DFS.
  • the first mass FM will follow movement of the structure S as the damped first springs DFS are rigid in the Z-direction.
  • movement of the structure S and thus the first mass FM in the Z-direction may cause relative movement between the first mass FM and the second mass SM in the Z-direction due to the damped second springs DSS allowing movement in that direction.
  • the second mass SM can thus be used to damp motion of the structure S in the Z-direction using the damped second springs DSS.
  • the damping system DS can be used to dampen a structure S of any apparatus.
  • an apparatus is a robot arm in manufacturing or measuring equipment.
  • the damping system DS may be used in any type of machinery that has a structure S that suffers from the first and second eigenmodes.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • imprint lithography a topography in a patterning device defines the pattern created on a substrate.
  • the topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof.
  • the patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
  • the invention may take the form of a computer program containing one or more sequences of machine -readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
  • a data storage medium e.g. semiconductor memory, magnetic or optical disk

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Abstract

La présente invention concerne un appareil comprenant une structure (S) et un système d'amortissement (DS). La structure a un premier mode propre et un deuxième mode propre. Le système d'amortissement comprend une première masse (FM), un premier dispositif d'amortissement (DD1), un premier ressort (FS), une deuxième masse (SM), un deuxième dispositif d'amortissement (DD2) et un deuxième ressort (SS). La première masse est reliée à la structure au moyen du premier dispositif d'amortissement et du premier ressort. La deuxième masse est reliée à la première masse au moyen du deuxième dispositif d'amortissement et du deuxième ressort. Le système d'amortissement est agencé pour amortir le premier mode propre par déplacement de la première masse et de la deuxième masse, et est agencé pour amortir le deuxième mode propre par déplacement de la deuxième masse
PCT/EP2018/054871 2017-03-30 2018-02-28 Appareil, manipulateur de substrat, manipulateur de dispositif de modelage, système d'amortissement et procédé de fabrication d'un système d'amortissement WO2018177668A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP17163838.0 2017-03-30
EP17163838 2017-03-30

Publications (1)

Publication Number Publication Date
WO2018177668A1 true WO2018177668A1 (fr) 2018-10-04

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CN110332271A (zh) * 2019-08-06 2019-10-15 宜达工程设计（天津）有限责任公司 一种嵌套式减震器
NL2024985A (en) * 2019-02-28 2020-09-04 Asml Netherlands Bv Apparatus for assembly of a reticle assembly

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JP2005072152A (ja) * 2003-08-21 2005-03-17 Nikon Corp 制振装置及びステージ装置並びに露光装置
DE102004020605A1 (de) * 2004-04-27 2005-11-24 Erwin W. Kötter Consulting Engineers e.K. Schwingungstilger oder Schwingungsdämpfer
JP2011051078A (ja) * 2009-09-04 2011-03-17 Canon Inc 位置決めステージ
US20130215408A1 (en) * 2012-02-22 2013-08-22 Asml Netherlands B.V. Lithographic Apparatus and Device Manufacturing Method
CN103306395A (zh) * 2013-07-12 2013-09-18 山东大学 多维可调式减振控制装置
US20160077443A1 (en) * 2008-04-18 2016-03-17 Asml Holding N.V. Rapid Exchange Device for Lithography Reticles

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JP2005072152A (ja) * 2003-08-21 2005-03-17 Nikon Corp 制振装置及びステージ装置並びに露光装置
DE102004020605A1 (de) * 2004-04-27 2005-11-24 Erwin W. Kötter Consulting Engineers e.K. Schwingungstilger oder Schwingungsdämpfer
US20160077443A1 (en) * 2008-04-18 2016-03-17 Asml Holding N.V. Rapid Exchange Device for Lithography Reticles
JP2011051078A (ja) * 2009-09-04 2011-03-17 Canon Inc 位置決めステージ
US20130215408A1 (en) * 2012-02-22 2013-08-22 Asml Netherlands B.V. Lithographic Apparatus and Device Manufacturing Method
CN103306395A (zh) * 2013-07-12 2013-09-18 山东大学 多维可调式减振控制装置

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Publication number Priority date Publication date Assignee Title
NL2024985A (en) * 2019-02-28 2020-09-04 Asml Netherlands Bv Apparatus for assembly of a reticle assembly
WO2020173892A3 (fr) * 2019-02-28 2020-10-29 Asml Netherlands B.V. Appareil d'assemblage d'ensemble réticule
JP7547352B2 (ja) 2019-02-28 2024-09-09 エーエスエムエル ネザーランズ ビー．ブイ． レチクルアセンブリのアセンブリのための装置
CN110332271A (zh) * 2019-08-06 2019-10-15 宜达工程设计（天津）有限责任公司 一种嵌套式减震器
CN110332271B (zh) * 2019-08-06 2021-05-04 宜达工程设计（天津）有限责任公司 一种嵌套式减震器

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