WO2018169298A1 - Ultrasonic fingerprint sensor and manufacturing method therefor - Google Patents

Ultrasonic fingerprint sensor and manufacturing method therefor Download PDF

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Publication number
WO2018169298A1
WO2018169298A1 PCT/KR2018/002970 KR2018002970W WO2018169298A1 WO 2018169298 A1 WO2018169298 A1 WO 2018169298A1 KR 2018002970 W KR2018002970 W KR 2018002970W WO 2018169298 A1 WO2018169298 A1 WO 2018169298A1
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Prior art keywords
piezoelectric
sensor
silicon substrate
ultrasonic fingerprint
region
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PCT/KR2018/002970
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French (fr)
Korean (ko)
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박상영
박영태
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주식회사 베프스
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Publication of WO2018169298A1 publication Critical patent/WO2018169298A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00Pattern recognition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Definitions

  • the present invention relates to an ultrasonic fingerprint sensor and a method of manufacturing the same.
  • Biometrics is a technology that provides a high level of security, and fingerprint technology is one of the important biometric technologies.
  • fingerprint recognition extracts a specific pattern or feature point (for example, a branching point at which the ridge of the fingerprint branches, a disadvantage of ending the ridge) from a fingerprint image formed by receiving a fingerprint from the user, and a pattern of a pre-stored fingerprint image or It is performed to contrast with the feature point.
  • a specific pattern or feature point for example, a branching point at which the ridge of the fingerprint branches, a disadvantage of ending the ridge
  • the fingerprint sensor for recognizing a user's fingerprint may be manufactured in the form of a module including a peripheral component or a structure, for example, and may be implemented integrally with a physical function key. have.
  • FIG 1 schematically illustrates the configuration of an ultrasonic fingerprint sensor according to the prior art.
  • the ultrasonic fingerprint sensor is in a first direction to be electrically connected to a plurality of piezoelectric rods 100 arranged to form a sensor array, and upper ends of the plurality of piezoelectric rods 100.
  • the depicted reference numeral 102 denotes a shielding layer, which is a protective coating formed on top of the first electrode bar 106 so that the finger is placed in proximity to the sensor array
  • reference numeral 104 denotes a sensor array opposite the shielding layer 102.
  • the support is attached to the end of the support for supporting the plurality of piezoelectric rods 100 from the bottom.
  • the piezoelectric rod 100 is formed of a material having piezo characteristics, for example, PZT (lead zirconate titanate), PST, Quartz, (Pb, Sm) TiO3, PMN (Pb (MgNb) O3
  • the material may include at least one of) -PT (PbTiO3), PVDF, or PVDF-TrFe.
  • a voltage having a resonant frequency of an ultrasonic band is applied to the first electrode bar 106 connected to the upper end of the piezoelectric rod 100 and the second electrode bar 108 connected to the lower end of the piezoelectric rod 100 to thereby move the piezoelectric rod 100 up and down.
  • the ultrasonic signal having a predetermined frequency is generated and emitted as illustrated in FIG.
  • the ultrasonic signal emitted from the piezoelectric rod 100 does not pass through the interface between the piezoelectric rod 100 and the air and returns to the inside of the piezoelectric rod 100.
  • a part of the emitted ultrasonic signal penetrates the interface between the skin of the finger and the piezoelectric rod 100 and proceeds to the inside of the finger.
  • the pattern can be detected.
  • the present invention improves the process of attaching a rigid panel for finger contact on the upper electrode bar, thereby eliminating the process of attaching the dummy panel for forming the sensor array and the process of forming a protective coating for the finger contact position. It is possible to provide an ultrasonic fingerprint sensor and a method of manufacturing the same, which can simplify the manufacturing process.
  • the present invention forms a via hole electrically conductive with the upper electrode bar so that the upper electrode bar and the lower electrode bar can be connected to the external terminal at the same height, thereby improving the convenience and process efficiency of manufacturing an ultrasonic fingerprint sensor package. It is an object of the present invention to provide an ultrasonic fingerprint sensor and a method of manufacturing the same.
  • a method of manufacturing an ultrasonic fingerprint sensor comprising: forming a plurality of piezoelectric rods using a plurality of first grooves formed in a predetermined sensor region of a silicon substrate; Forming a plurality of second grooves to function as via holes in an edge region of the silicon substrate previously designated to be positioned outside the sensor region; Forming a plurality of first electrode bars in a first direction, the plurality of first electrode bars being energized with conductive materials formed in corresponding via holes, respectively, and electrically connected to upper ends of the plurality of piezoelectric rods; Attaching a rigid panel to upper surfaces of the plurality of first electrode bars, the silicon substrate, and the piezoelectric rod; Planarizing (CMP) a lower surface of the silicon substrate so that the via holes and lower ends of the plurality of piezoelectric rods are exposed to the outside; Removing the silicon substrate in the sensor region and filling an insulating material in a space from which the silicon substrate is removed;
  • CMP Planarizing
  • the forming of the plurality of piezoelectric rods may include forming a plurality of first grooves in the sensor region by using a mask in which a sensor array shape is previously patterned; Forming a barrier film in the sensor region; And a predetermined piezoelectric material in the form of powder filled in each of the plurality of first grooves on which the barrier film is formed may be sintered to form a piezoelectric rod.
  • the ultrasonic fingerprint sensor includes a sensor substrate and a silicon substrate which is in contact with an outer portion of the sensor region and is maintained as an edge region, wherein the edge region is formed to surround all the outer sides of the sensor region, or a side portion of the sensor region. May be formed to expose some.
  • the width of the edge region where the via hole is formed may be formed relatively thicker than the width of the edge region where the via hole is not formed.
  • the vertical cross section of the ultrasonic fingerprint sensor may be arranged in the order of the silicon substrate, the insulating material, and the piezoelectric rod on which the via hole is formed.
  • the rigid panel may be attached using an epoxy resin.
  • the rigid panel comprises at least one of a glass panel and a plastic panel having a predetermined hardness.
  • an ultrasonic fingerprint sensor manufactured by the manufacturing method of the ultrasonic fingerprint sensor described above.
  • a plurality of piezoelectric rods are arranged to form a sensor array and an insulating material is formed to fill a periphery of each piezoelectric rod, and one of the sides of the sensor region.
  • a piezoelectric layer comprising a silicon substrate in contact with the above to form an edge region; A plurality of first electrode bars disposed in a first direction along an upper surface of the piezoelectric layer; A plurality of second electrode bars disposed in a direction orthogonal to a first direction along a lower surface of the piezoelectric layer; And a rigid panel attached to an upper surface of the piezoelectric layer and an upper portion of the first electrode bar, wherein a plurality of via holes corresponding to each of the plurality of first electrode bars are formed in the edge area.
  • the lower end is provided with an ultrasonic fingerprint sensor, characterized in that the electrode portion is formed.
  • a process of attaching a dummy panel for forming a sensor array and a protective coating on a finger contact position by improving a process of attaching a rigid panel for contacting a finger on an upper electrode bar is performed.
  • Forming process can be omitted, there is an effect that the manufacturing process is simplified.
  • the upper electrode bar and the lower electrode bar can be connected to the external terminal at the same height, thereby increasing the convenience and process efficiency of manufacturing an ultrasonic fingerprint sensor package. There is also an effect.
  • FIG. 1 is a view schematically showing the configuration of an ultrasonic fingerprint sensor according to the prior art.
  • FIG. 2 is a view for explaining the shape and operation of the piezoelectric rod according to the prior art.
  • FIG 3 is a cross-sectional view of the ultrasonic fingerprint sensor and a plan view of a piezoelectric layer according to an embodiment of the present invention.
  • FIGS. 4 and 5 are views for explaining a manufacturing process of the ultrasonic fingerprint sensor according to an embodiment of the present invention.
  • first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • an element such as a layer, region or substrate is described as being on or “onto” another element, the element may be directly above or directly above another element and There may be intermediate or intervening elements. On the other hand, if one element is mentioned as being “directly on” or extending "directly onto” another element, no other intermediate elements are present. In addition, when one element is described as being “connected” or “coupled” to another element, the element may be directly connected to or directly coupled to another element, or an intermediate intervening element may be present. have. On the other hand, when one element is described as being “directly connected” or “directly coupled” to another element, no other intermediate element exists.
  • FIG 3 is a cross-sectional view of the ultrasonic fingerprint sensor and a plan view of a piezoelectric layer according to an embodiment of the present invention.
  • the ultrasonic fingerprint sensor may be conveniently divided into a rigid panel layer, a piezoelectric layer, and an electrode layer.
  • the rigid panel layer may include the rigid panel 250
  • the piezoelectric layer may be formed of the silicon substrate 210, the piezoelectric rod 230, and the insulating material 255.
  • the electrode layer may include a first electrode bar 245, a second electrode bar 260, and an electrode unit 270.
  • the piezoelectric layer formed by using the silicon substrate 210 is processed so that only the edge region of the silicon substrate 210 is maintained, and the via hole 240 is formed in a plurality of places of the silicon substrate 210 having only the edge region. Each is formed. Each via hole 240 may be formed at a position corresponding to each of the first electrode bars 245 which will be described later.
  • a region formed of the piezoelectric rod 230 and the insulating material 255 as a region other than the edge held by the silicon substrate 210 may be referred to as a sensor region.
  • 3B illustrates a case in which the silicon substrate 210 is maintained on all four sides of the edge so as to surround all of the sensor regions.
  • the edge 1 is based on the sensor region in consideration of the formation position of the via hole 240.
  • the silicon substrate 210 may be processed to be held only at the side or the two sides.
  • a plurality of piezoelectric rods 230 are arranged to form a sensor array, and the space between the respective piezoelectric rods 230 constituting the sensor array and the outermost piezoelectric layer.
  • the space between the rods 230 and the silicon substrate 210 at the edge is filled with insulating material 255.
  • the piezoelectric layer includes a silicon substrate 210 having a via hole 240 formed in a horizontal direction from a sidewall, an insulating material 255, a piezoelectric rod 230, an insulating material 255, and a piezoelectric material. It is arranged in the order of the rod 230.
  • the width of the silicon substrate 210 forming the edge of the piezoelectric layer may be sufficient as long as the via hole 240 can be stably formed at an appropriate location.
  • the width of the silicon substrate 210 is appropriately determined in the same total area, the size of the sensor array to be formed in the inner space may be adjusted to suit the set purpose.
  • the width of the edge region where the via hole 235 is formed is increased.
  • the via hole 235 may be formed relatively thicker than the width of the edge area where the via hole 235 is not formed.
  • Each piezoelectric rod 230 formed in the shape of a bar or rod having a predetermined length has a piezo characteristic, for example, PZT (lead zirconate titanate), PST, quartz, ( Pb, Sm) TiO 3, PMN (Pb (MgNb) O 3) -PT (PbTiO 3), PVDF, or PVDF-TrFe may be formed of a material including at least one material.
  • a plurality of first electrode bars 245 arranged in a first direction are formed at upper ends of the piezoelectric layers to be electrically connected to upper ends of the plurality of piezoelectric rods 230 (see FIG. 1).
  • a plurality of second electrode bars 260 arranged in a second direction orthogonal to the first direction are formed at the lower end of the piezoelectric layer to be electrically connected to the lower ends of the plurality of piezoelectric rods 230.
  • an electrode unit 270 may be formed at a lower portion of each via hole 240 electrically connected to each of the first electrode bars 245.
  • the wire bonding or the like may be used.
  • Each of the first electrode bar 245 and the second electrode bar 260 may be easily connected to an external terminal without an additional process.
  • the second electrode bar 260, the electrode portion 270, and the lower part of the piezoelectric layer are electrically insulated so as to be electrically connected to an external terminal without the risk of an electrical short.
  • Ink (PSR ink) 285 may be applied (PSR).
  • the rigid panel 250 is attached to the first electrode bar 245 and the piezoelectric layer using the epoxy resin 280.
  • the rigid panel 250 may be formed of, for example, glass or plastic having a predetermined hardness.
  • the epoxy resin 280 to be used as the adhesive material may be determined as a material having a property of not suppressing vertical vibration of the piezoelectric rod 230.
  • FIGS. 4 and 5 are views for explaining a manufacturing process of the ultrasonic fingerprint sensor according to an embodiment of the present invention.
  • the photoresist (PR) 215 is coated on the upper surface of the silicon substrate 210 (step (a)), and the exposure and the exposure of the sensor array shape to be fabricated using a mask patterned in advance. Development is carried out (step (b)).
  • step (c) an etching (silicon etching) process is performed to dig the first groove to a predetermined depth in order to introduce a predetermined piezoelectric material (for example, PZT, etc.) into the silicon substrate 210.
  • a predetermined piezoelectric material for example, PZT, etc.
  • Each groove is formed of a piezoelectric rod 230 as described below.
  • the photoresist coated on the silicon substrate 210 is removed to form a silicon mold.
  • a piezoelectric material in a powder state is filled in each of the plurality of first grooves etched and formed in the silicon substrate 210, and a sintering process is performed.
  • the sintering process is a process in which powders filled by heating to a predetermined temperature are deposited on each bonding surface to form a mass.
  • a passivation process for forming a barrier film 220 for preventing a reaction between the silicon substrate 210 and the piezoelectric material due to the high temperature of the sintering process is preceded before filling the grooves with the piezoelectric material 225 in the powder state. May be
  • the chemical mechanical polishing (CMP) to planarize the top surface of the piezoelectric layer in step (e) to fill each groove so that the sintered piezoelectric material 225 is formed into each piezoelectric rod 230.
  • CMP chemical mechanical polishing
  • the second groove 235 is formed in the edge region of the silicon substrate 210 in which the piezoelectric rod 230 is formed in step (e). As described below, the second groove 235 is formed to correspond to the position where the plurality of first electrode bars 245 are to be formed, and functions as a via hole 240 electrically connected to the first electrode bars 245. It is to.
  • the second groove 235 may be formed by, for example, the same process as that of the steps (a) to (c) described above.
  • step (f) the plurality of plurality of electrodes arranged in the first direction to be electrically connected with the metal film formed in the corresponding second groove 235 and also electrically connected to the upper ends of the plurality of piezoelectric rods 230.
  • the first electrode bar 245 is formed.
  • the process of forming the first electrode bar includes, for example, a sputtering process of depositing a metal (for example, Au / Ti, etc.) to form an electrode in the via hole 240 and an upper surface of the piezoelectric layer.
  • a metal for example, Au / Ti, etc.
  • the thickness of the metal formed in the sputtering process may be increased, and the metal film formed in the via hole 240 may be formed in an electroplating process of increasing the thickness so that the metal film is electrically connected to the first electrode bar 245.
  • the rigid panel 250 is attached to the first electrode bar 245 and the piezoelectric layer using the epoxy resin 280.
  • the rigid panel 250 may be formed of, for example, glass or a plastic having a predetermined hardness, and the epoxy resin 280 has flexibility and does not prevent vertical vibration of the piezoelectric rod 230.
  • the rigid panel 250 described above is used as a work surface to which a finger is to be touched to receive a fingerprint. Since the rigid panel 250 is attached immediately after the formation of the first electrode bar 245, a process of temporarily attaching the dummy panel for the operation of filling an insulating material between the piezoelectric rods 230 to be described later may be omitted. In addition, there is an advantage that the process of applying a protective coating on the piezoelectric layer after the formation of the second electrode bar 260 can be omitted.
  • step (h) a chemical mechanical polishing (CMP) process is performed on the lower surface of the piezoelectric layer so that the lower end of the formed piezoelectric rod 230 and the metal film in the via hole 240 are exposed to the lower portion of the piezoelectric layer.
  • Step (h) to step (k) to be described later may be performed in a state in which the ultrasonic fingerprint sensor formed in the above-mentioned steps (a) to (g) is inverted.
  • step (i) the silicon existing between the piezoelectric rods 230 constituting the sensor array (that is, the silicon existing as a partition between the piezoelectric rods) is removed.
  • a deep reactive ion etching (DRIE) technique may be used, and a portion of the silicon region located at the edge of the silicon substrate 210 may also be inserted into the insulating material 255 which will be described later. Can be removed.
  • DRIE deep reactive ion etching
  • step (j) an insulating material filling process is performed in which the insulating material 255 is inserted between the piezoelectric rods 230 and also between the outermost piezoelectric rod 230 and the silicon substrate 210.
  • the insulating material 255 may be a material of a flexible material that does not suppress the piezoelectric rod 230 from vibrating up and down when a voltage having a resonance frequency is applied.
  • the insulating material filling process may be made of, for example, an insulating material coating on the entire lower surface of the piezoelectric layer, and when the lower end of the piezoelectric rod 230 or the like is covered with the insulating material 255 by coating the insulating material 255 A CMP process may be further performed to expose the rod 230 to the outside.
  • step (k) a plurality of second electrode bars 260 arranged in a second direction orthogonal to the first direction are formed to be electrically connected to the lower ends of the plurality of piezoelectric rods 230.
  • each electrode part 270 is formed to be electrically connected to the exposed metal film through each via hole 240.
  • the first electrode bar 245 and the second electrode bar 260 are structured to be connected to the external terminal at substantially the same height, so that the convenience and process efficiency of the ultrasonic fingerprint sensor package manufacturing can be achieved. There is this.
  • the generated ultrasonic fingerprint sensor when assembled to the lower part of the second electrode bar 260, the electrode part 270, and the piezoelectric layer, it may be electrically connected to an external terminal without the risk of an electrical short.
  • PSR may be applied to the PSR ink 285.

Abstract

An ultrasonic fingerprint sensor and a manufacturing method therefor are provided. The ultrasonic fingerprint sensor comprises: a piezoelectric layer including a sensor region having a plurality of piezoelectric rods arranged so as to form a sensor array and having an insulating material formed to fill the periphery of each piezoelectric rod, and a silicon substrate coming in contact with at least one of the side surfaces of the sensor region so as to form an edge region; a plurality of first electrode bars arranged in a first direction along the upper surface of the piezoelectric layer; a plurality of second electrode bars arranged in a direction orthogonal to the first direction, along the lower surface of the piezoelectric layer; and a rigid panel attached to the upper surface of the piezoelectric layer and an upper part of the first electrode bar.

Description

초음파 지문 센서 및 그 제조 방법Ultrasonic Fingerprint Sensor and Manufacturing Method Thereof
본 발명은 초음파 지문 센서 및 그 제조 방법에 관한 것이다. The present invention relates to an ultrasonic fingerprint sensor and a method of manufacturing the same.
생체 인식(biometrics)은 고도의 보안 레벨을 제공하는 기술이며, 지문 인식 기술은 중요한 생체 인식 기술 중 하나이다. Biometrics is a technology that provides a high level of security, and fingerprint technology is one of the important biometric technologies.
일반적으로 지문 인식은 사용자에게서 지문을 입력받아 형성한 지문 영상에서 특정 패턴이나 특징점(예를 들어, 지문의 융선이 분기되는 분기점, 융선이 끝나는 단점 등)을 추출하고, 미리 저장된 지문 영상의 패턴 또는 특징점과 대비하도록 수행된다.In general, fingerprint recognition extracts a specific pattern or feature point (for example, a branching point at which the ridge of the fingerprint branches, a disadvantage of ending the ridge) from a fingerprint image formed by receiving a fingerprint from the user, and a pattern of a pre-stored fingerprint image or It is performed to contrast with the feature point.
사용자의 지문을 인식하는 지문 센서는 예를 들어 주변 부품이나 구조를 포함하는 모듈의 형태로 제조될 수 있고, 물리적인 기능키에 일체화되어 구현될 수도 있기 때문에, 최근 각종 전자기기에 다양하게 장착되고 있다.The fingerprint sensor for recognizing a user's fingerprint may be manufactured in the form of a module including a peripheral component or a structure, for example, and may be implemented integrally with a physical function key. have.
도 1에는 종래기술에 따른 초음파 지문 센서의 구성이 개략적으로 도시되어 있다.1 schematically illustrates the configuration of an ultrasonic fingerprint sensor according to the prior art.
도 1을 참조하면, 초음파 지문 센서는 센서 어레이(array)를 형성하도록 배열되는 복수의 압전 로드(rod)(100), 복수의 압전 로드(100)의 상측 단부에 전기적으로 접속되도록 제1 방향으로 배열되는 복수의 제1 전극바(106), 복수의 압전 로드(100)의 하측 단부에 전기적으로 접속되도록 제1 방향에 직교하는 제2 방향으로 배열되는 복수의 제2 전극바(108)를 포함한다. Referring to FIG. 1, the ultrasonic fingerprint sensor is in a first direction to be electrically connected to a plurality of piezoelectric rods 100 arranged to form a sensor array, and upper ends of the plurality of piezoelectric rods 100. A plurality of first electrode bars 106 arranged, and a plurality of second electrode bars 108 arranged in a second direction orthogonal to the first direction to be electrically connected to the lower ends of the plurality of piezoelectric rods 100. do.
도시된 참조부호 102는 손가락이 센서 어레이에 근접하게 놓여지도록 하기 위해 제1 전극바(106)의 상부에 형성된 보호 코팅인 차폐층을 나타내고, 참조부호 104는 차폐층(102)에 반대되는 센서 어레이의 단부에 부착되어 복수의 압전 로드(100)를 하부에서 지지하는 지지체를 나타낸다.The depicted reference numeral 102 denotes a shielding layer, which is a protective coating formed on top of the first electrode bar 106 so that the finger is placed in proximity to the sensor array, and reference numeral 104 denotes a sensor array opposite the shielding layer 102. The support is attached to the end of the support for supporting the plurality of piezoelectric rods 100 from the bottom.
여기서, 압전 로드(100)는 피에조(Piezo) 특성을 가지는 소재로 형성되며, 예를 들어 PZT(납 지르콘산염 티탄산염), PST, Quartz, (Pb, Sm)TiO3, PMN(Pb(MgNb)O3)-PT(PbTiO3), PVDF 또는 PVDF-TrFe 중 적어도 하나의 물질이 포함된 소재가 이에 해당될 수 있다.Here, the piezoelectric rod 100 is formed of a material having piezo characteristics, for example, PZT (lead zirconate titanate), PST, Quartz, (Pb, Sm) TiO3, PMN (Pb (MgNb) O3 The material may include at least one of) -PT (PbTiO3), PVDF, or PVDF-TrFe.
압전 로드(100)의 상측 단부에 접속된 제1 전극바(106)와 하측 단부에 접속된 제2 전극바(108)에 초음파 대역의 공진 주파수를 갖는 전압을 인가하여 압전 로드(100)를 상하로 진동시키면, 도 2에 예시된 바와 같이 소정의 주파수를 가지는 초음파 신호가 생성되어 방출된다. A voltage having a resonant frequency of an ultrasonic band is applied to the first electrode bar 106 connected to the upper end of the piezoelectric rod 100 and the second electrode bar 108 connected to the lower end of the piezoelectric rod 100 to thereby move the piezoelectric rod 100 up and down. When vibrating, the ultrasonic signal having a predetermined frequency is generated and emitted as illustrated in FIG.
차폐층(102)에 손가락이 접촉되지 않은 상태에서는, 압전 로드(100)에서 방출된 초음파 신호는 압전 로드(100)와 공기의 계면을 통과하지 못하고 압전 로드(100) 내부로 되돌아온다. In the state where the finger is not in contact with the shielding layer 102, the ultrasonic signal emitted from the piezoelectric rod 100 does not pass through the interface between the piezoelectric rod 100 and the air and returns to the inside of the piezoelectric rod 100.
그러나, 손가락이 접촉된 상태에서는, 방출된 초음파 신호의 일부가 손가락의 피부와 압전 로드(100)의 경계면을 뚫고 손가락 내부로 진행하게 되며, 이때 반사되어 되돌아오는 신호의 강도가 낮아져 이를 이용하여 지문 패턴이 감지될 수 있다. However, in the state where the finger is in contact, a part of the emitted ultrasonic signal penetrates the interface between the skin of the finger and the piezoelectric rod 100 and proceeds to the inside of the finger. The pattern can be detected.
그러나, 종래의 초음파 지문 센서는 복수의 압전 로드(100) 각각의 상측에 전기적으로 접속된 제1 전극바(106)를 외부 단자와 연결하기 위해서는 와이어 본딩이 실시되거나 별도의 기판을 장착하는 등의 추가 공정이 요구되어, 초음파 지문 센서 패키지를 제공하는 공정이 복잡해질 수 밖에 없고 또한 제조 단가가 상승되는 문제점이 있었다. However, in the conventional ultrasonic fingerprint sensor, in order to connect the first electrode bar 106 electrically connected to the upper side of each of the piezoelectric rods 100 with an external terminal, wire bonding is performed or a separate substrate is mounted. Since an additional process is required, the process of providing an ultrasonic fingerprint sensor package is complicated and the manufacturing cost increases.
본 발명은 상측 전극바의 상부에 손가락이 접촉되기 위한 리지드(rigid) 패널을 부착하는 공정을 개선함으로써, 센서 어레이 형성을 위한 더미 패널의 부착 공정, 손가락 접촉 위치에 대한 보호 코팅 형성 공정을 생략할 수 있어 제조 공정이 간소화되는 초음파 지문 센서 및 그 제조 방법을 제공하기 위한 것이다.The present invention improves the process of attaching a rigid panel for finger contact on the upper electrode bar, thereby eliminating the process of attaching the dummy panel for forming the sensor array and the process of forming a protective coating for the finger contact position. It is possible to provide an ultrasonic fingerprint sensor and a method of manufacturing the same, which can simplify the manufacturing process.
본 발명은 상측 전극바와 전기적으로 도통되는 비아 홀(Via hole)을 형성하여 상측 전극바와 하측 전극바가 같은 높이에서 외부 단자와의 연결 작업할 수 있도록 함으로써, 초음파 지문 센서 패키지 제조의 편의성과 공정 효율성을 도모할 수 있는 초음파 지문 센서 및 그 제조 방법을 제공하기 위한 것이다.The present invention forms a via hole electrically conductive with the upper electrode bar so that the upper electrode bar and the lower electrode bar can be connected to the external terminal at the same height, thereby improving the convenience and process efficiency of manufacturing an ultrasonic fingerprint sensor package. It is an object of the present invention to provide an ultrasonic fingerprint sensor and a method of manufacturing the same.
본 발명의 이외의 목적들은 하기의 설명을 통해 쉽게 이해될 수 있을 것이다.Other objects of the present invention will be readily understood through the following description.
본 발명의 일 측면에 따르면, 초음파 지문 센서의 제조 방법에 있어서, 실리콘 기판의 미리 지정된 센서 영역에 형성된 복수의 제1 홈을 이용하여 복수의 압전 로드가 형성되는 단계; 상기 센서 영역의 외곽에 위치하도록 미리 지정된 상기 실리콘 기판의 가장자리 영역에 비아 홀로 기능될 복수의 제2 홈이 형성되는 단계; 각각 대응되는 비아 홀에 형성된 도전 물질과 통전되고, 복수의 압전 로드의 상측 단부에 전기적으로 접속되도록 제1 방향으로 복수의 제1 전극바 각각이 형성되는 단계; 상기 복수의 제1 전극바, 상기 실리콘 기판 및 상기 압전 로드의 상면에 리지드(rigid) 패널이 부착되는 단계; 상기 비아 홀과 상기 복수의 압전 로드의 하측 단부가 외부로 노출되도록 상기 실리콘 기판의 하면이 평탄화(CMP) 처리되는 단계; 상기 센서 영역 내의 실리콘 기판이 제거되고, 실리콘 기판이 제거된 공간에 절연재가 필링(filling)되는 단계; 및 복수의 압전 로드의 하측 단부에 전기적으로 접속되도록 상기 제1 방향에 직교하는 제2 방향으로 복수의 제2 전극바 각각이 형성되고, 복수의 비아 홀의 하측 단부에 통전되도록 전극부가 각각 형성되는 단계를 포함하는 초음파 지문 센서의 제조 방법이 제공된다.According to an aspect of the present invention, a method of manufacturing an ultrasonic fingerprint sensor, the method comprising: forming a plurality of piezoelectric rods using a plurality of first grooves formed in a predetermined sensor region of a silicon substrate; Forming a plurality of second grooves to function as via holes in an edge region of the silicon substrate previously designated to be positioned outside the sensor region; Forming a plurality of first electrode bars in a first direction, the plurality of first electrode bars being energized with conductive materials formed in corresponding via holes, respectively, and electrically connected to upper ends of the plurality of piezoelectric rods; Attaching a rigid panel to upper surfaces of the plurality of first electrode bars, the silicon substrate, and the piezoelectric rod; Planarizing (CMP) a lower surface of the silicon substrate so that the via holes and lower ends of the plurality of piezoelectric rods are exposed to the outside; Removing the silicon substrate in the sensor region and filling an insulating material in a space from which the silicon substrate is removed; And forming a plurality of second electrode bars in a second direction orthogonal to the first direction so as to be electrically connected to the lower ends of the plurality of piezoelectric rods, and respectively forming electrode parts to conduct electricity to the lower ends of the plurality of via holes. There is provided a method of manufacturing an ultrasonic fingerprint sensor comprising a.
상기 복수의 압전 로드가 형성되는 단계는, 센서 어레이 형상이 미리 패터닝된 마스크를 이용하여 상기 센서 영역에 복수의 제1 홈이 형성되는 단계; 상기 센서 영역에 배리어 막이 형성되는 단계; 및 배리어 막이 형성된 복수의 제1 홈 각각에 전충(filling)된 분말 형태의 미리 지정된 압전 소재가 소결처리되어 압전 로드로 형성되는 단계를 포함할 수 있다.The forming of the plurality of piezoelectric rods may include forming a plurality of first grooves in the sensor region by using a mask in which a sensor array shape is previously patterned; Forming a barrier film in the sensor region; And a predetermined piezoelectric material in the form of powder filled in each of the plurality of first grooves on which the barrier film is formed may be sintered to form a piezoelectric rod.
상기 초음파 지문 센서는 상기 센서 영역과, 상기 센서 영역의 외곽에 접촉되어 가장자리 영역으로 유지되는 실리콘 기판을 포함하되, 상기 가장자리 영역은 상기 센서 영역의 외곽을 모두 둘러싸도록 형성되거나, 상기 센서 영역의 측부가 일부 노출되도록 형성될 수 있다.The ultrasonic fingerprint sensor includes a sensor substrate and a silicon substrate which is in contact with an outer portion of the sensor region and is maintained as an edge region, wherein the edge region is formed to surround all the outer sides of the sensor region, or a side portion of the sensor region. May be formed to expose some.
비아 홀이 형성되는 가장자리 영역의 폭이 비아 홀이 형성되지 않는 가장자리 영역의 폭에 비해 상대적으로 두껍게 형성될 수도 있다.The width of the edge region where the via hole is formed may be formed relatively thicker than the width of the edge region where the via hole is not formed.
상기 초음파 지문 센서의 수직 단면은 상기 비아홀이 형성된 실리콘 기판, 절연재, 압전 로드의 순서로 배치될 수 있다.The vertical cross section of the ultrasonic fingerprint sensor may be arranged in the order of the silicon substrate, the insulating material, and the piezoelectric rod on which the via hole is formed.
상기 리지드 패널은 에폭시 수지를 이용하여 부착될 수 있다.The rigid panel may be attached using an epoxy resin.
상기 리지드 패널은 유리 패널, 미리 지정된 경도를 가지는 플라스틱 패널 중 하나 이상을 포함하는 것을 특징으로 하는 초음파 지문 센서의 제조 방법.The rigid panel comprises at least one of a glass panel and a plastic panel having a predetermined hardness.
본 발명의 다른 측면에 따르면, 전술한 초음파 지문 센서의 제조 방법에 의해 제조된 초음파 지문 센서가 제공된다. According to another aspect of the present invention, there is provided an ultrasonic fingerprint sensor manufactured by the manufacturing method of the ultrasonic fingerprint sensor described above.
본 발명의 또 다른 측면에 따르면, 초음파 지문 센서에 있어서, 복수의 압전 로드가 센서 어레이를 형성하도록 배열되고 절연재가 각 압전 로드의 주변을 채우도록 형성된 센서 영역과, 상기 센서 영역의 측면들 중 하나 이상에 접촉하여 가장자리 영역을 형성하는 실리콘 기판을 포함하는 압전층; 상기 압전층의 상측 표면을 따라 제1 방향으로 배치된 복수의 제1 전극바; 상기 압전층의 하측 표면을 따라 제1 방향과 직교하는 방향으로 배치된 복수의 제2 전극바; 및 상기 압전층의 상측 표면과 상기 제1 전극바의 상부에 부착되는 리지드 패널을 포함하되, 상기 가장자리 영역에는 상기 복수의 제1 전극바 각각에 대응되는 복수의 비아 홀이 형성되고, 상기 비아 홀의 하측 단부에는 전극부가 형성되는 것을 특징으로 하는 초음파 지문 센서가 제공된다. According to still another aspect of the present invention, in an ultrasonic fingerprint sensor, a plurality of piezoelectric rods are arranged to form a sensor array and an insulating material is formed to fill a periphery of each piezoelectric rod, and one of the sides of the sensor region. A piezoelectric layer comprising a silicon substrate in contact with the above to form an edge region; A plurality of first electrode bars disposed in a first direction along an upper surface of the piezoelectric layer; A plurality of second electrode bars disposed in a direction orthogonal to a first direction along a lower surface of the piezoelectric layer; And a rigid panel attached to an upper surface of the piezoelectric layer and an upper portion of the first electrode bar, wherein a plurality of via holes corresponding to each of the plurality of first electrode bars are formed in the edge area. The lower end is provided with an ultrasonic fingerprint sensor, characterized in that the electrode portion is formed.
전술한 것 외의 다른 측면, 특징, 이점이 이하의 도면, 특허청구범위 및 발명의 상세한 설명으로부터 명확해질 것이다.Other aspects, features, and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.
본 발명의 실시예에 따르면, 상측 전극바의 상부에 손가락이 접촉되기 위한 리지드(rigid) 패널을 부착하는 공정을 개선함으로써, 센서 어레이 형성을 위한 더미 패널의 부착 공정, 손가락 접촉 위치에 대한 보호 코팅 형성 공정을 생략할 수 있어 제조 공정이 간소화되는 효과가 있다.According to an embodiment of the present invention, a process of attaching a dummy panel for forming a sensor array and a protective coating on a finger contact position by improving a process of attaching a rigid panel for contacting a finger on an upper electrode bar is performed. Forming process can be omitted, there is an effect that the manufacturing process is simplified.
또한 상측 전극바와 전기적으로 도통되는 비아 홀(Via hole)을 형성하여 상측 전극바와 하측 전극바가 같은 높이에서 외부 단자와의 연결 작업할 수 있도록 함으로써, 초음파 지문 센서 패키지 제조의 편의성과 공정 효율성을 도모할 수 있는 효과도 있다.In addition, by forming a via hole electrically connected to the upper electrode bar, the upper electrode bar and the lower electrode bar can be connected to the external terminal at the same height, thereby increasing the convenience and process efficiency of manufacturing an ultrasonic fingerprint sensor package. There is also an effect.
도 1은 종래기술에 따른 초음파 지문 센서의 구성을 개략적으로 나타낸 도면.1 is a view schematically showing the configuration of an ultrasonic fingerprint sensor according to the prior art.
도 2는 종래기술에 따른 압전 로드의 형상 및 동작을 설명하기 위한 도면.2 is a view for explaining the shape and operation of the piezoelectric rod according to the prior art.
도 3은 본 발명의 일 실시예에 따른 초음파 지문 센서의 단면도와 압전층의 평면도.3 is a cross-sectional view of the ultrasonic fingerprint sensor and a plan view of a piezoelectric layer according to an embodiment of the present invention.
도 4 및 도 5는 본 발명의 일 실시예에 따른 초음파 지문 센서의 제조 공정을 설명하기 위한 도면.4 and 5 are views for explaining a manufacturing process of the ultrasonic fingerprint sensor according to an embodiment of the present invention.
본 발명은 다양한 변환을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 상세한 설명에 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변환, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 본 발명을 설명함에 있어서 관련된 공지 기술에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다.As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.
제1, 제2 등의 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 상기 구성요소들은 상기 용어들에 의해 한정되어서는 안 된다. 상기 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다. Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
본 명세서에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.
층, 영역 또는 기판과 같은 요소가 다른 요소 "위(on)"에 존재하는 것으로 또는 "위로(onto)" 확장되는 것으로 기술되는 경우, 그 요소는 다른 요소의 직접 위에 있거나 직접 위로 확장될 수 있고, 또는 중간의 개입 요소가 존재할 수도 있다. 반면에, 하나의 요소가 다른 요소 "바로 위(directly on)"에 있거나 "바로 위로(directly onto)" 확장된다고 언급되는 경우, 다른 중간 요소들은 존재하지 않는다. 또한, 하나의 요소가 다른 요소에 "연결(connected)"되거나 "결합(coupled)"된다고 기술되는 경우, 그 요소는 다른 요소에 직접 연결되거나 직접 결합될 수 있고, 또는 중간의 개입 요소가 존재할 수도 있다. 반면에, 하나의 요소가 다른 요소에 "직접 연결(directly connected)"되거나 "직접 결합(directly coupled)"된다고 기술되는 경우에는 다른 중간 요소가 존재하지 않는다.If an element such as a layer, region or substrate is described as being on or "onto" another element, the element may be directly above or directly above another element and There may be intermediate or intervening elements. On the other hand, if one element is mentioned as being "directly on" or extending "directly onto" another element, no other intermediate elements are present. In addition, when one element is described as being "connected" or "coupled" to another element, the element may be directly connected to or directly coupled to another element, or an intermediate intervening element may be present. have. On the other hand, when one element is described as being "directly connected" or "directly coupled" to another element, no other intermediate element exists.
"아래의(below)" 또는 "위의(above)" 또는 "상부의(upper)" 또는 "하부의(lower)" 또는 "수평의(horizontal)" 또는 "측면의(lateral)" 또는 "수직의(vertical)" 등과 같은 상대적인 용어들은 여기에서 도면에 도시된 바와 같이 하나의 요소, 층 또는 영역의 다른 요소, 층 또는 영역에 대한 관계를 기술하는데 사용될 수 있다. 이들 용어들은 도면에 묘사된 방향(orientation)에 부가하여 장치의 다른 방향을 포괄하기 위한 의도를 갖는 것으로 이해되어야 한다."Below" or "above" or "upper" or "lower" or "horizontal" or "lateral" or "vertical" Relative terms such as "vertical" and the like may be used herein to describe a relationship of one element, layer or region to another element, layer or region, as shown in the figures. It is to be understood that these terms are intended to encompass other directions of the device in addition to the orientation depicted in the figures.
또한, 첨부 도면을 참조하여 설명함에 있어, 도면 부호에 관계없이 동일한 구성 요소는 동일하거나 관련된 참조부호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다. 본 발명을 설명함에 있어서 관련된 공지 기술에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다. In addition, in the description with reference to the accompanying drawings, the same components regardless of reference numerals will be given the same or related reference numerals and redundant description thereof will be omitted. In the following description of the present invention, if it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
도 3은 본 발명의 일 실시예에 따른 초음파 지문 센서의 단면도와 압전층의 평면도이다.3 is a cross-sectional view of the ultrasonic fingerprint sensor and a plan view of a piezoelectric layer according to an embodiment of the present invention.
도 3을 참조하면, 초음파 지문 센서는 리지드(rigid) 패널층, 압전층 및 전극층으로 편의상 구분될 수 있다. 여기서, 리지드 패널층은 리지드 패널(250)을 포함할 수 있고, 압전층은 실리콘 기판(210), 압전 로드(230) 및 절연재(255)로 형성될 수 있다. 전극층은 제1 전극바(245), 제2 전극바(260) 및 전극부(270)를 포함할 수 있다.Referring to FIG. 3, the ultrasonic fingerprint sensor may be conveniently divided into a rigid panel layer, a piezoelectric layer, and an electrode layer. Here, the rigid panel layer may include the rigid panel 250, and the piezoelectric layer may be formed of the silicon substrate 210, the piezoelectric rod 230, and the insulating material 255. The electrode layer may include a first electrode bar 245, a second electrode bar 260, and an electrode unit 270.
구체적으로, 실리콘 기판(210)을 이용하여 형성되는 압전층은 실리콘 기판(210)의 가장자리 영역만 유지되도록 가공되고, 가장자리 영역만 유지된 실리콘 기판(210)의 복수 개소에 비아 홀(240)이 각각 형성된다. 각각의 비아 홀(240)은 후술될 각각의 제1 전극바(245)에 대응되는 위치에 형성될 수 있다. Specifically, the piezoelectric layer formed by using the silicon substrate 210 is processed so that only the edge region of the silicon substrate 210 is maintained, and the via hole 240 is formed in a plurality of places of the silicon substrate 210 having only the edge region. Each is formed. Each via hole 240 may be formed at a position corresponding to each of the first electrode bars 245 which will be described later.
본 명세서에서 설명의 편의상 실리콘 기판(210)으로 유지되는 가장자리 이외의 영역으로서 압전 로드(230)와 절연재(255)로 구성되는 영역을 센서 영역으로 지칭될 수 있다. 도 3의 (b)에는 센서 영역을 모두 둘러싸도록 가장자리 4측 면 모두에서 실리콘 기판(210)이 유지되는 경우가 예시되었으나, 비아 홀(240)의 형성 위치를 고려하여 센서 영역을 기준으로 가장자리 1측면 또는 2측면에만 실리콘 기판(210)이 유지되도록 가공될 수도 있을 것이다.For convenience of description, a region formed of the piezoelectric rod 230 and the insulating material 255 as a region other than the edge held by the silicon substrate 210 may be referred to as a sensor region. 3B illustrates a case in which the silicon substrate 210 is maintained on all four sides of the edge so as to surround all of the sensor regions. However, the edge 1 is based on the sensor region in consideration of the formation position of the via hole 240. The silicon substrate 210 may be processed to be held only at the side or the two sides.
실리콘 기판(210)이 제거된 압전층의 내측 영역에는 복수의 압전 로드(230)가 센서 어레이를 형성하도록 배열되고, 센서 어레이를 이루는 각각의 압전 로드(230)들 사이의 공간과 최외곽의 압전 로드(230)들과 가장자리의 실리콘 기판(210) 사이의 공간은 절연재(255)로 채워진다. In the inner region of the piezoelectric layer from which the silicon substrate 210 has been removed, a plurality of piezoelectric rods 230 are arranged to form a sensor array, and the space between the respective piezoelectric rods 230 constituting the sensor array and the outermost piezoelectric layer. The space between the rods 230 and the silicon substrate 210 at the edge is filled with insulating material 255.
도 3의 (a)에 예시된 바와 같이, 압전층은 측벽으로부터 수평 방향으로 비아 홀(240)이 형성된 실리콘 기판(210), 절연재(255), 압전 로드(230), 절연재(255), 압전 로드(230)의 순서로 배치된다. As illustrated in FIG. 3A, the piezoelectric layer includes a silicon substrate 210 having a via hole 240 formed in a horizontal direction from a sidewall, an insulating material 255, a piezoelectric rod 230, an insulating material 255, and a piezoelectric material. It is arranged in the order of the rod 230.
압전층의 가장자리를 형성하는 실리콘 기판(210)의 폭은 적절한 개소에 비아 홀(240)이 안정적으로 형성될 수 있는 폭이면 충분할 수 있다. 물론 동일한 전체 면적에서 실리콘 기판(210)의 폭이 적절하게 결정됨으로써, 설정한 목적에 적합하도록 내측 공간에 형성할 센서 어레이의 크기가 조절될 수도 있음은 당연하다.The width of the silicon substrate 210 forming the edge of the piezoelectric layer may be sufficient as long as the via hole 240 can be stably formed at an appropriate location. Of course, since the width of the silicon substrate 210 is appropriately determined in the same total area, the size of the sensor array to be formed in the inner space may be adjusted to suit the set purpose.
또한, 예를 들어 도 3의 (b)와 같이, 센서 영역을 모두 둘러싸도록 가장자리 4측 면 모두에서 실리콘 기판(210)이 유지되는 경우일지라도, 비아 홀(235)이 형성되는 가장자리 영역의 폭이 비아 홀(235)이 형성되지 않는 가장자리 영역의 폭에 비해 상대적으로 두껍게 형성될 수도 있음은 당연하다.Also, for example, as shown in FIG. 3B, even when the silicon substrate 210 is maintained on all four sides of the edge so as to surround all the sensor regions, the width of the edge region where the via hole 235 is formed is increased. Naturally, the via hole 235 may be formed relatively thicker than the width of the edge area where the via hole 235 is not formed.
소정의 길이를 가지는 바(bar) 또는 봉 등의 형상으로 형성되는 각각의 압전 로드(230)는 피에조(Piezo) 특성을 가지도록 예를 들어 PZT(납 지르콘산염 티탄산염), PST, Quartz, (Pb, Sm)TiO3, PMN(Pb(MgNb)O3)-PT(PbTiO3), PVDF 또는 PVDF-TrFe 중 적어도 하나의 물질을 포함하는 재료로 형성될 수 있다.Each piezoelectric rod 230 formed in the shape of a bar or rod having a predetermined length has a piezo characteristic, for example, PZT (lead zirconate titanate), PST, quartz, ( Pb, Sm) TiO 3, PMN (Pb (MgNb) O 3) -PT (PbTiO 3), PVDF, or PVDF-TrFe may be formed of a material including at least one material.
압전층의 상측 단부에는 복수의 압전 로드(230)의 상측 단부와 전기적으로 접속되도록 제1 방향으로 배열된 복수의 제1 전극바(245)가 형성된다(도 1 참조). 또한 압전층의 하측 단부에는 복수의 압전 로드(230)의 하측 단부와 전기적으로 접속되도록 제1 방향에 직교하는 제2 방향으로 배열된 복수의 제2 전극바(260)가 형성된다. 또한 각각의 제1 전극바(245)에 전기적으로 연결되는 각 비아 홀(240)의 하부에는 전극부(270)가 각각 형성될 수 있다.A plurality of first electrode bars 245 arranged in a first direction are formed at upper ends of the piezoelectric layers to be electrically connected to upper ends of the plurality of piezoelectric rods 230 (see FIG. 1). In addition, a plurality of second electrode bars 260 arranged in a second direction orthogonal to the first direction are formed at the lower end of the piezoelectric layer to be electrically connected to the lower ends of the plurality of piezoelectric rods 230. In addition, an electrode unit 270 may be formed at a lower portion of each via hole 240 electrically connected to each of the first electrode bars 245.
이와 같이, 복수의 제1 전극바(245) 각각에 전기적으로 연결된 복수의 전극부(270)와 복수의 제2 전극바(260)가 동일하거나 실질적으로 동일한 높이에 위치되기 때문에, 와이어 본딩 등의 부가적인 공정 없이 제1 전극바(245)와 제2 전극바(260) 각각이 외부 단자에 용이하게 연결 작업될 수 있는 장점이 있다. As such, since the plurality of electrode portions 270 and the plurality of second electrode bars 260 electrically connected to the plurality of first electrode bars 245 are positioned at the same or substantially the same height, the wire bonding or the like may be used. Each of the first electrode bar 245 and the second electrode bar 260 may be easily connected to an external terminal without an additional process.
전술한 초음파 지문 센서가 모듈 어셈블리될 때, 전기적 쇼트(short)의 위험 없이 외부 단자에 전기적으로 연결시킬 수 있도록 하기 위해 제2 전극바(260), 전극부(270) 및 압전층의 하부에는 절연 잉크(PSR ink)(285)가 도포(PSR) 처리될 수 있다.When the ultrasonic fingerprint sensor described above is assembled to the module, the second electrode bar 260, the electrode portion 270, and the lower part of the piezoelectric layer are electrically insulated so as to be electrically connected to an external terminal without the risk of an electrical short. Ink (PSR ink) 285 may be applied (PSR).
또한 제1 전극바(245)와 압전층의 상부에는 에폭시 수지(280)를 이용하여 리지드 패널(250)이 부착된다. 리지드 패널(250)은 예를 들어 유리나 소정의 경도를 가지는 플라스틱으로 형성될 수 있다. 접착 물질로 이용될 에폭시 수지(280)는 압전 로드(230)의 상하 진동을 억제하지 않는 특성을 가지는 재질로 결정될 수 있다.In addition, the rigid panel 250 is attached to the first electrode bar 245 and the piezoelectric layer using the epoxy resin 280. The rigid panel 250 may be formed of, for example, glass or plastic having a predetermined hardness. The epoxy resin 280 to be used as the adhesive material may be determined as a material having a property of not suppressing vertical vibration of the piezoelectric rod 230.
도 4 및 도 5는 본 발명의 일 실시예에 따른 초음파 지문 센서의 제조 공정을 설명하기 위한 도면이다.4 and 5 are views for explaining a manufacturing process of the ultrasonic fingerprint sensor according to an embodiment of the present invention.
도 4 및 도 5를 참조하면, 실리콘 기판(210)의 상면에 포토 레지스트(PR)(215)가 코팅되고(단계 (a)), 제작될 센서 어레이 형상이 미리 패터닝된 마스크를 이용하여 노광 및 현상이 실시된다(단계 (b)).4 and 5, the photoresist (PR) 215 is coated on the upper surface of the silicon substrate 210 (step (a)), and the exposure and the exposure of the sensor array shape to be fabricated using a mask patterned in advance. Development is carried out (step (b)).
단계 (c)에서, 실리콘 기판(210)에 미리 지정된 압전 소재(예를 들어 PZT 등)를 유입시키기 위해 미리 지정된 깊이만큼 제1 홈을 파내는 식각(실리콘 에칭) 공정이 실시된다. 각각의 홈은 후술되는 바와 같이 압전 로드(230)로 형성된다. 이어서, 실리콘 기판(210)의 상부에 코팅된 포토 레지스트가 제거되어, 실리콘 몰드가 형성된다. In step (c), an etching (silicon etching) process is performed to dig the first groove to a predetermined depth in order to introduce a predetermined piezoelectric material (for example, PZT, etc.) into the silicon substrate 210. Each groove is formed of a piezoelectric rod 230 as described below. Then, the photoresist coated on the silicon substrate 210 is removed to form a silicon mold.
단계 (d)에서, 식각되어 실리콘 기판(210)에 형성된 복수의 제1 홈 각각에 분말 상태의 압전 소재가 채워지고(filling) 소결(sintering) 공정이 실시된다. 소결 공정은 미리 지정된 온도로 가열하여 채워진 분말들이 각 접합면에서 서로 증착되어 한 덩어리로 형성되도록 하는 공정이다. 여기서, 소결 공정의 고온에 의해 실리콘 기판(210)과 압전 소재간의 반응을 막기 위한 배리어 막(220)을 형성하는 패시베이션(passivation) 공정이 분말 상태의 압전 소재(225)를 홈에 채워넣기 전에 선행될 수도 있다.In step (d), a piezoelectric material in a powder state is filled in each of the plurality of first grooves etched and formed in the silicon substrate 210, and a sintering process is performed. The sintering process is a process in which powders filled by heating to a predetermined temperature are deposited on each bonding surface to form a mass. Here, a passivation process for forming a barrier film 220 for preventing a reaction between the silicon substrate 210 and the piezoelectric material due to the high temperature of the sintering process is preceded before filling the grooves with the piezoelectric material 225 in the powder state. May be
소결 공정이 완료되면, 각각의 홈에 채워져 소결된 압전 소재(225)가 각각의 압전 로드(230)로 형성되도록 하기 위해, 단계 (e)에서 압전층의 상면을 평탄화하는 CMP(Chemical Mechanical Polishing) 공정이 실시된다.When the sintering process is completed, the chemical mechanical polishing (CMP) to planarize the top surface of the piezoelectric layer in step (e) to fill each groove so that the sintered piezoelectric material 225 is formed into each piezoelectric rod 230. The process is carried out.
또한, 단계 (e)에서 압전 로드(230)가 각각 형성된 실리콘 기판(210)의 가장자리 영역에 제2 홈(235)을 형성한다. 제2 홈(235)은 후술되는 바와 같이, 복수의 제1 전극바(245)가 형성될 위치에 대응되도록 형성되며, 제1 전극바(245)와 전기적으로 연결되는 비아 홀(240)로 기능하기 위한 것이다. 제2 홈(235)은 예를 들어 전술한 단계 (a) 내지 (c)의 공정과 동일한 공정에 의해 형성될 수 있을 것이다.In addition, the second groove 235 is formed in the edge region of the silicon substrate 210 in which the piezoelectric rod 230 is formed in step (e). As described below, the second groove 235 is formed to correspond to the position where the plurality of first electrode bars 245 are to be formed, and functions as a via hole 240 electrically connected to the first electrode bars 245. It is to. The second groove 235 may be formed by, for example, the same process as that of the steps (a) to (c) described above.
이어서, 단계 (f)에서, 대응되는 제2 홈(235)에 형성된 금속 막과 전기적으로 연결되고, 또한 복수의 압전 로드(230)의 상측 단부와 전기적으로 접속되도록 제1 방향으로 배열된 복수의 제1 전극바(245)가 형성된다.Subsequently, in step (f), the plurality of plurality of electrodes arranged in the first direction to be electrically connected with the metal film formed in the corresponding second groove 235 and also electrically connected to the upper ends of the plurality of piezoelectric rods 230. The first electrode bar 245 is formed.
제1 전극바의 형성 공정은, 예를 들어 비아 홀(240)의 내부와 압전층의 상부면에 전극을 형성하기 위해 금속(예를 들어 Au/Ti 등)을 증착하는 스퍼터링(sputtering) 공정과, 스퍼터링 공정에서 형성된 금속의 두께를 두껍게 하고 또한 비아 홀(240)에 형성된 금속막이 제1 전극바(245)와 전기적으로 연결되도록 두께를 키우는 전기도금 공정 등으로 이루어질 수 있다.The process of forming the first electrode bar includes, for example, a sputtering process of depositing a metal (for example, Au / Ti, etc.) to form an electrode in the via hole 240 and an upper surface of the piezoelectric layer. The thickness of the metal formed in the sputtering process may be increased, and the metal film formed in the via hole 240 may be formed in an electroplating process of increasing the thickness so that the metal film is electrically connected to the first electrode bar 245.
이어서 단계 (g)에서, 에폭시 수지(280)를 이용하여 제1 전극바(245)와 압전층의 상부에 리지드 패널(250)이 부착된다. 리지드 패널(250)은 예를 들어 유리 또는 소정의 경도를 가지는 플라스틱으로 형성될 수 있으며, 에폭시 수지(280)는 유연성을 가지고 있어 압전 로드(230)의 상하 진동을 방해하지 않는 장점이 있다. Subsequently, in step (g), the rigid panel 250 is attached to the first electrode bar 245 and the piezoelectric layer using the epoxy resin 280. The rigid panel 250 may be formed of, for example, glass or a plastic having a predetermined hardness, and the epoxy resin 280 has flexibility and does not prevent vertical vibration of the piezoelectric rod 230.
전술한 리지드 패널(250)은 지문을 입력받기 위해 손가락이 접촉될 작업면으로 이용된다. 리지드 패널(250)이 제1 전극바(245)의 형성 직후에 부착됨으로써 후술될 압전 로드(230) 사이에 절연재를 채워넣는 등의 작업을 위해 임시로 더미 패널을 부착하는 공정이 생략될 수 있고, 또한 제2 전극바(260)의 형성 이후 압전층의 상부에 보호 코팅을 실시하는 공정이 생략될 수 있는 장점이 있다.The rigid panel 250 described above is used as a work surface to which a finger is to be touched to receive a fingerprint. Since the rigid panel 250 is attached immediately after the formation of the first electrode bar 245, a process of temporarily attaching the dummy panel for the operation of filling an insulating material between the piezoelectric rods 230 to be described later may be omitted. In addition, there is an advantage that the process of applying a protective coating on the piezoelectric layer after the formation of the second electrode bar 260 can be omitted.
이어서, 단계 (h)에서, 형성된 압전 로드(230)의 하측 단부와 비아 홀(240) 내의 금속막이 압전층의 하부로 노출되도록 압전층의 하부면에 대한 CMP(Chemical Mechanical Polishing) 공정이 실시된다. 단계 (h) 내지 후술될 단계 (k)는 전술한 단계 (a) 내지 단계 (g)에서 형성된 초음파 지문 센서를 뒤집은 상태에서 실시될 수도 있다. Subsequently, in step (h), a chemical mechanical polishing (CMP) process is performed on the lower surface of the piezoelectric layer so that the lower end of the formed piezoelectric rod 230 and the metal film in the via hole 240 are exposed to the lower portion of the piezoelectric layer. . Step (h) to step (k) to be described later may be performed in a state in which the ultrasonic fingerprint sensor formed in the above-mentioned steps (a) to (g) is inverted.
단계 (i)에서, 센서 어레이를 구성하는 압전 로드(230) 사이에 존재하는 실리콘(즉, 압전 로드들 사이에 격벽으로 존재하던 실리콘)이 제거된다. 이때, 예를 들어 심도 반응성 이온 에칭(DRIE, deep reactive ion etching) 기술 등이 이용될 수 있고, 또한 실리콘 기판(210)의 가장자리에 위치하는 실리콘 영역의 일부도 후술될 절연재(255)의 삽입을 위해 제거될 수 있을 것이다. In step (i), the silicon existing between the piezoelectric rods 230 constituting the sensor array (that is, the silicon existing as a partition between the piezoelectric rods) is removed. In this case, for example, a deep reactive ion etching (DRIE) technique may be used, and a portion of the silicon region located at the edge of the silicon substrate 210 may also be inserted into the insulating material 255 which will be described later. Can be removed.
단계 (j)에서, 압전 로드(230)들 사이에 또한 최외곽의 압전 로드(230)와 실리콘 기판(210) 사이에 절연재(255)를 삽입하는 절연재 필링(filling) 공정이 실시된다. 절연재(255)는 공진 주파수를 가지는 전압 인가시 압전 로드(230)가 상하로 진동됨을 억제하지 않는 유연한 재질의 재료일 수 있다.In step (j), an insulating material filling process is performed in which the insulating material 255 is inserted between the piezoelectric rods 230 and also between the outermost piezoelectric rod 230 and the silicon substrate 210. The insulating material 255 may be a material of a flexible material that does not suppress the piezoelectric rod 230 from vibrating up and down when a voltage having a resonance frequency is applied.
절연재 필링 공정은 예를 들어 압전층의 하면 전면(全面)에 대한 절연재 코팅으로 이루어질 수 있고, 절연재(255) 코팅에 의해 압전 로드(230) 등의 하측 단부가 절연재(255)로 덮여진 경우 압전 로드(230) 등을 외부로 노출시키기 위한 CMP 공정이 더 실시될 수 있다.The insulating material filling process may be made of, for example, an insulating material coating on the entire lower surface of the piezoelectric layer, and when the lower end of the piezoelectric rod 230 or the like is covered with the insulating material 255 by coating the insulating material 255 A CMP process may be further performed to expose the rod 230 to the outside.
이후, 단계 (k)에서 복수의 압전 로드(230)의 하측 단부와 전기적으로 접속되도록 제1 방향에 직교하는 제2 방향으로 배열된 복수의 제2 전극바(260)가 형성된다. 또한 각각의 비아 홀(240)을 통해 노출된 금속막에 전기적으로 연결되는 각각의 전극부(270)가 형성된다. Thereafter, in step (k), a plurality of second electrode bars 260 arranged in a second direction orthogonal to the first direction are formed to be electrically connected to the lower ends of the plurality of piezoelectric rods 230. In addition, each electrode part 270 is formed to be electrically connected to the exposed metal film through each via hole 240.
이와 같이, 제1 전극바(245)와 제2 전극바(260)가 실질적으로 같은 높이에서 외부 단자와의 연결될 수 있도록 구조화됨으로써, 초음파 지문 센서 패키지 제조의 편의성과 공정 효율성을 도모할 수 있는 장점이 있다. As such, the first electrode bar 245 and the second electrode bar 260 are structured to be connected to the external terminal at substantially the same height, so that the convenience and process efficiency of the ultrasonic fingerprint sensor package manufacturing can be achieved. There is this.
아울러, 제2 전극바(260), 전극부(270) 및 압전층의 하부에는 생성된 초음파 지문 센서가 모듈 어셈블리될 때, 전기적 쇼트(short)의 위험 없이 외부 단자에 전기적으로 연결시킬 수 있도록 하기 위해 절연 잉크(PSR ink)(285)로 도포(PSR) 처리될 수 있다.In addition, when the generated ultrasonic fingerprint sensor is assembled to the lower part of the second electrode bar 260, the electrode part 270, and the piezoelectric layer, it may be electrically connected to an external terminal without the risk of an electrical short. PSR may be applied to the PSR ink 285.
또한, 상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술 분야에서 통상의 지식을 가진 자라면 하기의 특허 청구의 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.In addition, while the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to which the present invention pertains without departing from the spirit and scope of the present invention as set forth in the claims below. It will be understood that various modifications and changes can be made.

Claims (7)

  1. 초음파 지문 센서의 제조 방법에 있어서,In the manufacturing method of the ultrasonic fingerprint sensor,
    센서 영역과 상기 센서 영역의 외곽의 가장자리 영역으로 미리 구분된 실리콘 기판의 상기 센서 영역에 형성된 복수의 제1 홈을 이용하여 복수의 압전 로드가 형성되는 단계;Forming a plurality of piezoelectric rods using a plurality of first grooves formed in the sensor region of the silicon substrate, which are previously divided into a sensor region and an edge region outside the sensor region;
    상기 가장자리 영역에 비아 홀로 기능될 복수의 제2 홈이 형성되는 단계;Forming a plurality of second grooves to function as via holes in the edge region;
    각각 대응되는 비아 홀에 형성된 도전 물질과 통전되고, 복수의 압전 로드의 상측 단부에 전기적으로 접속되도록 제1 방향으로 복수의 제1 전극바 각각이 형성되는 단계;Forming a plurality of first electrode bars in a first direction, the plurality of first electrode bars being energized with conductive materials formed in corresponding via holes, respectively, and electrically connected to upper ends of the plurality of piezoelectric rods;
    상기 복수의 제1 전극바, 상기 실리콘 기판 및 상기 압전 로드의 상면에 리지드(rigid) 패널이 부착되는 단계;Attaching a rigid panel to upper surfaces of the plurality of first electrode bars, the silicon substrate, and the piezoelectric rod;
    상기 비아 홀과 상기 복수의 압전 로드의 하측 단부가 외부로 노출되도록 상기 실리콘 기판의 하면이 평탄화(CMP) 처리되는 단계;Planarizing (CMP) a lower surface of the silicon substrate so that the via holes and lower ends of the plurality of piezoelectric rods are exposed to the outside;
    상기 센서 영역 내의 실리콘 기판이 제거되고, 실리콘 기판이 제거된 공간에 절연재가 필링(filling)되는 단계; 및Removing the silicon substrate in the sensor region and filling an insulating material in a space from which the silicon substrate is removed; And
    복수의 압전 로드의 하측 단부에 전기적으로 접속되도록 상기 제1 방향에 직교하는 제2 방향으로 복수의 제2 전극바 각각이 형성되고, 복수의 비아 홀의 하측 단부에 통전되도록 전극부가 각각 형성되는 단계를 포함하는 초음파 지문 센서의 제조 방법.Forming a plurality of second electrode bars in a second direction orthogonal to the first direction so as to be electrically connected to the lower ends of the plurality of piezoelectric rods, and forming electrode parts so as to energize the lower ends of the plurality of via holes, respectively. Method for producing an ultrasonic fingerprint sensor comprising.
  2. 제1항에 있어서,The method of claim 1,
    상기 복수의 압전 로드가 형성되는 단계는,Forming the plurality of piezoelectric rods,
    센서 어레이 형상이 미리 패터닝된 마스크를 이용하여 상기 센서 영역에 복수의 제1 홈이 형성되는 단계;Forming a plurality of first grooves in the sensor area by using a mask in which a sensor array shape is previously patterned;
    상기 센서 영역에 배리어 막이 형성되는 단계; 및Forming a barrier film in the sensor region; And
    배리어 막이 형성된 복수의 제1 홈 각각에 전충(filling)된 분말 형태의 미리 지정된 압전 소재가 소결처리되어 압전 로드로 형성되는 단계를 포함하는 것을 특징으로 하는 초음파 지문 센서의 제조 방법.And a predetermined piezoelectric material in the form of powder filled in each of the plurality of first grooves on which the barrier film is formed is sintered to form a piezoelectric rod.
  3. 제1항에 있어서,The method of claim 1,
    상기 초음파 지문 센서는 상기 센서 영역과, 상기 센서 영역의 외곽에 접촉되어 상기 가장자리 영역으로 유지되는 실리콘 기판을 포함하되,The ultrasonic fingerprint sensor includes a sensor substrate and a silicon substrate in contact with an outer portion of the sensor region and maintained as the edge region.
    상기 가장자리 영역은 상기 센서 영역의 외곽을 모두 둘러싸도록 형성되거나, 상기 센서 영역의 측부가 일부 노출되도록 형성되는 것을 특징으로 초음파 지문 센서의 제조 방법.The edge region may be formed to surround all of the outside of the sensor region, or the side portion of the sensor region is formed to partially expose.
  4. 제3항에 있어서,The method of claim 3,
    비아 홀이 형성되는 가장자리 영역의 폭이 비아 홀이 형성되지 않는 가장자리 영역의 폭에 비해 상대적으로 두껍게 형성되는 것을 특징으로 하는 초음파 지문 센서의 제조 방법.A method of manufacturing an ultrasonic fingerprint sensor, characterized in that the width of the edge region where the via hole is formed is relatively thicker than the width of the edge region where the via hole is not formed.
  5. 제1항에 있어서,The method of claim 1,
    상기 초음파 지문 센서의 수평 단면은 상기 비아홀이 형성된 실리콘 기판, 절연재, 압전 로드의 순서로 배치되는 것을 특징으로 하는 초음파 지문 센서의 제조 방법.The horizontal cross section of the ultrasonic fingerprint sensor is a manufacturing method of the ultrasonic fingerprint sensor, characterized in that arranged in the order of the silicon substrate, the insulating material, the piezoelectric rod formed with the via hole.
  6. 제1항에 있어서,The method of claim 1,
    상기 리지드 패널은 에폭시 수지를 이용하여 부착되는 것을 특징으로 하는 초음파 지문 센서의 제조 방법.The rigid panel is a manufacturing method of the ultrasonic fingerprint sensor, characterized in that attached using an epoxy resin.
  7. 제1항에 있어서,The method of claim 1,
    상기 리지드 패널은 유리 패널, 미리 지정된 경도를 가지는 플라스틱 패널 중 하나 이상을 포함하는 것을 특징으로 하는 초음파 지문 센서의 제조 방법.The rigid panel comprises at least one of a glass panel and a plastic panel having a predetermined hardness.
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CN110265544A (en) * 2019-06-24 2019-09-20 京东方科技集团股份有限公司 Piezoelectric transducer and preparation method, the method and electronic equipment that carry out fingerprint recognition
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