WO2018163749A1 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
WO2018163749A1
WO2018163749A1 PCT/JP2018/005308 JP2018005308W WO2018163749A1 WO 2018163749 A1 WO2018163749 A1 WO 2018163749A1 JP 2018005308 W JP2018005308 W JP 2018005308W WO 2018163749 A1 WO2018163749 A1 WO 2018163749A1
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WO
WIPO (PCT)
Prior art keywords
substrate
entry
space
protective disk
base
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PCT/JP2018/005308
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French (fr)
Japanese (ja)
Inventor
航 矢野
正浩 野々村
正晃 古川
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2018163749A1 publication Critical patent/WO2018163749A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.
  • substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) such as organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and magneto-optical disks.
  • FPD Full Panel Display
  • Substrates such as a substrate, a photomask substrate, a ceramic substrate, and a solar cell substrate are included.
  • a single-wafer type substrate processing apparatus that processes substrates one by one includes a spin base that can rotate about a rotation axis along the vertical direction, and a holding pin that is provided on the spin base and holds the substrate.
  • the upper surface of the rotating substrate can be processed by the processing liquid discharged from the processing liquid nozzle.
  • substrate processing is proposed in which a protective disk is provided between the lower surface of the substrate and the spin base, thereby processing the upper surface of the substrate while protecting the lower surface of the substrate. Yes.
  • the mist of the processing liquid is prevented from entering the space between the protective disk and the lower surface of the substrate by floating the protective disk from the spin base and approaching the lower surface of the substrate. can do.
  • a gap is provided between the protective disk and the substrate. Therefore, the mist of the processing liquid may adhere to the lower surface of the substrate through the gap.
  • one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of satisfactorily protecting the lower surface of the substrate.
  • a base that rotates about a rotation axis along a vertical direction and a base that is spaced apart from each other in the rotational direction of the base are provided, and a peripheral portion of the substrate is disposed above the base. It is arranged between a plurality of holding pins to be held, a separation position that is disposed between the base and the substrate, and is spaced downward from the substrate, and a proximity position that is closer to the substrate than the separation position.
  • a substrate processing apparatus is provided, including a first entry suppressing member that suppresses the above.
  • the base can rotate around the rotation axis in a state where the peripheral edge of the substrate is held by the plurality of holding pins.
  • an air flow is generated around the rotating structure.
  • an airflow that flows between the lower surface of the substrate and the opposing member tends to be generated from the outside in the rotation radial direction of the substrate.
  • the first intrusion suppressing member suppresses the inflow of airflow into the space between the lower surface of the substrate and the facing member. Therefore, the liquid can also be prevented from entering the space between the lower surface of the substrate and the opposing member by riding on the airflow. Therefore, the lower surface of the substrate can be well protected.
  • the rotation diameter direction is a direction orthogonal to the rotation axis.
  • the inner side in the rotational radial direction is a direction toward the rotational axis in the rotational radial direction.
  • the outward direction in the rotational radial direction is a direction toward the side opposite to the rotational axis side in the rotational radial direction.
  • the first entry suppression member is closer to the lower surface of the substrate as it goes outward in the rotational radial direction of the substrate and the first fixing portion fixed to the opposing member.
  • a first elastic contact portion extending from the first fixed portion and elastically contacting a peripheral portion of the lower surface of the substrate.
  • the first elastic contact portion extends from the first fixing portion so as to approach the lower surface of the substrate as it goes outward from the first fixing portion in the rotational radial direction of the substrate. Therefore, when an air flow directed outward in the rotational radial direction is generated between the lower surface of the substrate and the opposing member, the air flow easily enters between the first elastic contact portion and the lower surface of the substrate.
  • the airflow is first such that a gap having a width necessary to pass between the first elastic contact portion and the lower surface of the substrate is formed between the first elastic contact portion and the lower surface of the substrate.
  • the elastic contact portion is elastically deformed. And this airflow is discharged
  • the first entry suppressing member is made of a porous material.
  • the first entry suppression member is formed of a porous material. Therefore, the 1st approach suppression member can let the gas pass by receiving the pressure more than a predetermined value from gas. An air flow directed outward in the radial direction is generated between the lower surface of the substrate and the opposing member. Due to this air flow, the pressure between the lower surface of the substrate and the opposing member around the first entry suppression member is a predetermined value. May be more than the value. In this case, the gas in the space between the lower surface of the substrate and the opposing member passes through the first entry suppressing member and is discharged to the outside.
  • the first entry suppression member can suppress the entry of airflow into the space between the lower surface of the substrate and the opposing member. Therefore, it is possible to prevent an excessive increase in pressure between the lower surface of the substrate and the opposing member, and it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member.
  • the first entry suppressing member is formed of a porous material, it is difficult for the liquid to pass therethrough. Therefore, it is possible to further suppress the entry of the liquid from the outside into the space between the lower surface of the substrate and the opposing member.
  • the substrate processing apparatus is provided on the holding pin, and is between the peripheral edge on the lower surface of the substrate and the holding pin and between the peripheral edge on the lower surface of the substrate and the opposing member. It further includes a second entry suppression member that suppresses the entry of the airflow into the space.
  • the second entry suppressing member suppresses the inflow of airflow from between the peripheral portion of the lower surface of the substrate and the holding pin to the space between the lower surface of the substrate and the opposing member. Therefore, it is possible to suppress the liquid from entering the space between the peripheral portion of the lower surface of the substrate and the holding pin and entering the space between the lower surface of the substrate and the opposing member by riding on the airflow.
  • the second entry suppressing member is closer to the lower surface of the substrate as it goes outward in the rotational radial direction of the substrate and the second fixing portion fixed to the holding pin.
  • a second elastic contact portion extending from the second fixing portion and elastically contacting a peripheral portion of the lower surface of the substrate.
  • the second elastic contact portion extends from the second fixed portion so as to approach the lower surface of the substrate as it goes outward from the second fixed portion in the rotation radial direction of the substrate. Therefore, when an air flow directed outward in the rotational radial direction is generated between the lower surface of the substrate and the opposing member, the air flow easily enters between the second elastic contact portion and the lower surface of the substrate.
  • the airflow is secondly formed such that a gap having a width necessary to pass between the second elastic contact portion and the lower surface of the substrate is formed between the second elastic contact portion and the lower surface of the substrate.
  • the elastic contact portion is elastically deformed.
  • the second entry suppressing member is made of a porous material.
  • the second entry suppressing member is formed of a porous material. Therefore, the 2nd approach suppression member can let the gas pass by receiving the pressure more than a predetermined value from gas.
  • An airflow directed outward in the radial direction is generated between the lower surface of the substrate and the opposing member, and due to this airflow, the pressure between the lower surface of the substrate and the opposing member around the second entry suppression member is predetermined. May be more than the value.
  • the gas in the space between the lower surface of the substrate and the counter member is discharged outside from the space between the lower surface of the substrate and the counter member.
  • the pressure between the lower surface of the substrate and the opposing member can be prevented from becoming excessively large, and the space between the peripheral portion of the lower surface of the substrate and the holding pin and the space between the lower surface of the substrate and the opposing member can be prevented. It is possible to suppress the entry of the airflow into the.
  • the second entry suppressing member is made of a porous material, it is difficult for the liquid to pass therethrough. Therefore, it is possible to further suppress the entry of the liquid from the outside into the space between the lower surface of the substrate and the opposing member.
  • the first entry suppression member prevents an air flow from entering a space between the lower surface of the substrate and the opposing member in a region between the holding pins adjacent in the rotation direction. Suppress. And the said 2nd approach suppression member suppresses the approach of the airflow to the space between the lower surface of the said board
  • the first entry suppressing member suppresses the entry of the airflow into the space between the lower surface of the substrate and the opposing member in the region between the holding pins adjacent in the rotation direction.
  • a 2nd approach suppression member suppresses approach of the air current to the space between the lower surface of a board
  • the substrate processing apparatus further includes a gas supply unit that supplies a gas between the facing member and the substrate.
  • the gas is supplied between the facing member and the substrate by the gas supply unit.
  • the gas supply unit By supplying the gas between the facing member and the substrate, an air flow from the space between the lower surface of the substrate and the facing member toward the outside of the space can be generated. Therefore, it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member.
  • a plurality of holding pins provided on a base at intervals in a rotation direction around a rotation axis along a vertical direction hold a peripheral edge of the substrate above the base.
  • a proximity step of bringing the opposing member close to the substrate such that an elastic member fixed to the opposing member facing the substrate from below is in contact with the lower surface of the substrate; and the plurality of holding pins of the substrate A substrate rotating step of rotating the base by rotating the base while holding the peripheral edge and the elastic member is in contact with the lower surface of the substrate, and a process of processing the substrate on the upper surface of the rotated substrate
  • a substrate processing method including a processing liquid supply step for supplying a liquid.
  • the substrate is rotated while the elastic member is in contact with the lower surface of the substrate.
  • an air flow is generated around the rotating structure.
  • an airflow that flows between the lower surface of the substrate and the opposing member tends to be generated from the outside in the rotation radial direction of the substrate.
  • FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus.
  • FIG. 3 is a schematic plan view of a spin base provided in the substrate processing apparatus.
  • 4A is a schematic diagram of a cross section taken along the line IVA-IVA of FIG.
  • FIG. 4B is an enlarged view of the periphery of the first fixing portion of FIG. 4A.
  • FIG. 5 is a schematic diagram of a cross section taken along line VV of FIG.
  • FIG. 6 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
  • FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus.
  • FIG. 3 is a schematic plan view of
  • FIG. 7 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus.
  • FIG. 8 is a schematic diagram of the periphery of the first entry suppressing member according to the first modification of the present embodiment.
  • FIG. 9 is a schematic diagram of the periphery of the second entry suppressing member according to the second modification of the present embodiment.
  • FIG. 10 is a schematic view of the periphery of the second entry suppressing member according to the third modification of the present embodiment.
  • FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention.
  • the substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one.
  • the substrate W is a disk-shaped substrate.
  • the substrate processing apparatus 1 has a load on which a plurality of processing units 2 for processing a substrate W with a processing solution such as a chemical solution or a rinsing solution, and a carrier C for storing a plurality of substrates W processed by the processing unit 2 are placed. It includes a port LP, transfer robots IR and CR that transfer the substrate W between the load port LP and the processing unit 2, and a controller 3 that controls the substrate processing apparatus 1.
  • the transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR.
  • the transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2.
  • the plurality of processing units 2 have the same configuration, for example.
  • FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2.
  • the processing unit 2 includes a spin chuck 5, a processing liquid supply unit 8, a cleaning unit 9, and a protective disk 10.
  • the spin chuck 5 rotates the substrate W around a vertical rotation axis A1 passing through the central portion of the substrate W while holding one substrate W in a horizontal posture.
  • the treatment liquid supply unit 8 supplies a treatment liquid such as deionized water (Deionized Water) to the upper surface of the substrate W.
  • the cleaning unit 9 cleans the upper surface of the substrate W by rubbing the brush 31 against the upper surface of the substrate W.
  • the protective disk 10 faces the substrate W from below, and protects the lower surface of the substrate W from a mist of processing liquid generated during substrate processing.
  • the protective disk 10 is an example of a facing member that faces at least the peripheral edge of the substrate W from below.
  • the processing unit 2 further includes a gas supply unit 11 that supplies a gas such as nitrogen (N 2 ) gas to the space A between the lower surface of the substrate W and the protective disk 10.
  • a gas such as nitrogen (N 2 ) gas
  • the processing unit 2 further includes a chamber 16 (see FIG. 1) that houses the spin chuck 5.
  • a chamber 16 In the chamber 16, an entrance (not shown) for carrying the substrate W into the chamber 16 and carrying the substrate W out of the chamber 16 is formed.
  • the chamber 16 is provided with a shutter unit (not shown) that opens and closes the entrance.
  • the spin chuck 5 is coupled to a spin base 21 (base) that can rotate around the rotation axis A ⁇ b> 1, a plurality of holding pins 20 that hold the periphery of the substrate W above the spin base 21, and the center of the spin base 21.
  • the electric motor 23 that applies a rotational force to the rotary shaft 22.
  • the rotation shaft 22 extends in the vertical direction along the rotation axis A1.
  • the rotation shaft 22 passes through the spin base 21 and has an upper end above the spin base 21.
  • the spin base 21 has a disk shape along the horizontal direction.
  • the plurality of holding pins 20 are provided on the peripheral edge of the upper surface of the spin base 21 with an interval in the rotation direction S (see also FIG. 3 described later).
  • an opening / closing unit 25 is provided in order to open and close the plurality of holding pins 20, an opening / closing unit 25 is provided.
  • the plurality of holding pins 20 hold (clamp) the substrate W by being closed by the opening / closing unit 25.
  • the plurality of holding pins 20 are released from being held by the substrate W by being opened by the opening / closing unit 25.
  • the opening / closing unit 25 includes, for example, a link mechanism (not shown) and a drive source (not shown).
  • the driving source includes, for example, a ball screw mechanism and an electric motor that gives a driving force thereto.
  • the opening / closing unit 25 may be configured to open and close the plurality of holding pins 20 by magnetic force.
  • the opening / closing unit 25 includes, for example, a first magnet (not shown) attached to the holding pin 20 and a second magnet that applies a repulsive force or an attractive force to the first magnet by approaching the first magnet. (Not shown). The opening and closing of the holding pin 20 is switched by the repulsive force or attractive force that the second magnet applies to the first magnet.
  • the spin chuck 5 is included in a substrate holding and rotating unit that holds the substrate W and rotates the substrate W about the rotation axis A1 along the vertical direction.
  • the processing liquid supply unit 8 is interposed in the processing liquid nozzle 40 for supplying a processing liquid such as DIW to the upper surface of the substrate W, a processing liquid supply pipe 41 coupled to the processing liquid nozzle 40, and the processing liquid supply pipe 41.
  • Treatment liquid valve 42 A processing liquid is supplied to the processing liquid supply pipe 41 from a processing liquid supply source.
  • the treatment liquid nozzle 40 is a fixed nozzle. Unlike the present embodiment, the treatment liquid nozzle 40 may be a moving nozzle that is movable in the horizontal direction and the vertical direction.
  • the treatment liquid supplied from the treatment liquid nozzle 40 is not limited to DIW, but includes carbonated water, electrolytic ion water, ozone water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water). Also good.
  • the cleaning unit 9 drives the brush 31 for cleaning the upper surface of the substrate W, the brush arm 35 that supports the brush 31, the rotation shaft 36 that rotates the brush arm 35, and the rotation shaft 36. And an arm moving mechanism 37 for moving the brush arm 35 in the horizontal direction and the vertical direction.
  • the brush 31 is held by a brush holder 32 disposed above the brush 31.
  • the brush holder 32 protrudes downward from the brush arm 35.
  • the brush 31 is an elastically deformable sponge brush made of a synthetic resin such as PVA (polyvinyl alcohol).
  • the brush 31 protrudes downward from the brush holder 32.
  • the brush 31 is not limited to a sponge brush, and may be a brush including a hair bundle formed by a plurality of resin fibers.
  • the arm movement mechanism 37 moves the brush arm 35 horizontally by rotating the rotation shaft 36 around the rotation axis A2, and moves the rotation shaft 36 vertically.
  • a brush vertical drive mechanism (not shown) for moving the brush arm 35 vertically.
  • the brush horizontal drive mechanism includes, for example, an electric motor that rotates the rotation shaft 36.
  • the brush vertical drive mechanism includes, for example, a ball screw mechanism and an electric motor that drives the ball screw mechanism.
  • the gas supply unit 11 includes a gas nozzle 50 that supplies a gas such as nitrogen gas to a space A between the lower surface of the substrate W and the protective disk 10, a gas supply pipe 51 that is coupled to the gas nozzle 50, and a gas supply pipe 51, and a gas valve 52 that opens and closes a gas flow path.
  • a gas such as nitrogen gas is supplied to the gas supply pipe 51 from a gas supply source.
  • the gas supplied from the gas supply source to the gas supply pipe 51 is preferably an inert gas such as nitrogen gas.
  • the inert gas is not limited to nitrogen gas, but is inert to the lower surface of the substrate W and devices formed on the lower surface.
  • examples of the inert gas include, in addition to nitrogen gas, rare gases such as helium and argon, and homing gas (a mixed gas of nitrogen gas and hydrogen gas).
  • the gas nozzle 50 is inserted through the rotary shaft 22.
  • the upper end of the gas nozzle 50 is exposed from the upper end of the rotating shaft 22.
  • a rectifying member 54 that rectifies the gas discharged from the gas nozzle 50 may be provided above the upper end of the gas nozzle 50.
  • the protective disk 10 has a substantially annular shape. A rotating shaft 22 is inserted through the protective disk 10. The protective disk 10 is disposed between the substrate W held by the holding pins 20 and the spin base 21. The protective disk 10 can move up and down.
  • a protective disk lifting / lowering unit 60 is coupled to the protective disk 10.
  • the protection disk 10 is moved up and down by the protection disk lifting / lowering unit 60, so that the protection disk 10 can be moved between a separation position spaced downward from the substrate W and a proximity position near the lower surface of the substrate W above the separation position. It is.
  • the protection disk lifting / lowering unit 60 is an example of a facing member lifting / lowering unit that lifts and lowers the facing member.
  • the protective disk lifting / lowering unit 60 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that applies a driving force to the ball screw mechanism. Further, the protective disk lifting / lowering unit 60 may be configured to lift and lower the protective disk 10 by magnetic force. In this case, the protection disk lifting / lowering unit 60 raises the protection disk 10 together with the first magnet by applying a repulsive force to the first magnet (not shown) attached to the protection disk 10 and the first magnet, for example. And a second magnet (not shown).
  • a guide shaft 61 extending in the vertical direction in parallel with the rotation axis A1 is coupled to the lower surface of the protective disk 10.
  • the guide shafts 61 are arranged at a plurality of positions at equal intervals in the rotation direction S of the substrate W.
  • the guide shaft 61 is coupled to a linear bearing 62 provided at a corresponding portion of the spin base 21.
  • the guide shaft 61 is movable in the vertical direction, that is, in a direction parallel to the rotation axis A ⁇ b> 1 while being guided by the linear bearing 62. Further, since the guide shaft 61 coupled to the lower surface of the protective disk 10 is coupled to the linear bearing 62, the protective disk 10 rotates integrally with the spin base 21 around the rotation axis A1.
  • the guide shaft 61 passes through the linear bearing 62.
  • the guide shaft 61 includes a flange 63 protruding outward at the lower end thereof.
  • the flange 63 contacts the lower end of the linear bearing 62, the upward movement of the guide shaft 61, that is, the upward movement of the protective disk 10 is restricted. That is, the flange 63 is a restricting member that restricts the upward movement of the protective disk 10.
  • FIG. 3 is a schematic plan view of the spin base 21.
  • the substrate W is indicated by a two-dot chain line.
  • the protective disk 10 has a circular shape having substantially the same size as the substrate W in plan view, and faces the periphery of the substrate W.
  • a cutout 10 a in which at least a part of the holding pin 20 is accommodated is provided at a portion corresponding to the holding pin 20 in the peripheral portion of the protective disk 10.
  • the processing unit 2 includes a first intrusion suppressing member 12 and a first intrusion suppressing member 12 that suppress (restrict) air current from entering the space A between the lower surface of the substrate W and the protection disk 10 from the outside in the rotation radial direction of the substrate W. 2 further includes an entry suppression member 13.
  • the rotational diameter direction of the substrate W is a direction orthogonal to the rotational axis A1.
  • the inner side of the substrate W in the rotation diameter direction is a direction toward the rotation axis A1 side in the rotation diameter direction of the substrate W.
  • the inner side in the rotational radial direction of the substrate W is simply referred to as the radial inner side.
  • the outward direction of the substrate W in the radial direction is the direction toward the opposite side of the rotational axis A1 side in the radial direction of the substrate W.
  • the outer side in the rotational radial direction of the substrate W is simply referred to as a radially outer side.
  • the first entry suppression member 12 suppresses the inflow of the air current from the space between the peripheral portion of the lower surface of the substrate W and the peripheral portion of the protective disk 10 to the space A between the lower surface of the substrate W and the protective disk 10.
  • the second entry suppression member 13 suppresses the inflow of airflow from between the peripheral edge of the lower surface of the substrate W and the holding pin 20 into the space A between the lower surface of the substrate W and the protective disk 10.
  • a plurality of first entry suppression members 12 and second entry suppression members 13 are provided.
  • the first entry suppressing member 12 is provided one by one in a portion between the holding pins 20 adjacent in the rotation direction S in the protective disk 10.
  • Each first entry suppression member 12 suppresses the entry of airflow into the space A between the lower surface of the substrate W and the protective disk 10 in the region between the holding pins 20 adjacent in the rotation direction S.
  • One second entry suppression member 13 is provided for each holding pin 20.
  • Each second entry suppression member 13 suppresses the entry of airflow into the space A between the lower surface of the substrate W and the protection disk 10 around the corresponding holding pin 20.
  • FIG. 4A is a schematic diagram of a cross section taken along the line IVA-IVA of FIG.
  • the protection disk 10 located at the close position is indicated by a solid line.
  • the protection disk 10 positioned at the separated position is indicated by a two-dot chain line.
  • the first entry suppression member 12 is a curved resin sheet in plan view (see FIG. 3).
  • the resin constituting the first entry suppressing member 12 is, for example, a synthetic resin.
  • the synthetic resin include PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), PP (polypropylene), PE (polyethylene), and the like.
  • the first entry suppression member 12 is an elastic member.
  • the first entry suppressing member 12 may be an elastic body such as synthetic rubber.
  • the first entry suppressing member 12 integrally includes a first fixing portion 80 fixed to the protective disk 10 and a first elastic contact portion 81 that elastically contacts the peripheral edge of the lower surface of the substrate W.
  • the first elastic contact portion 81 is in contact with the outer side in the radial direction from the portion where the device is formed on the lower surface of the substrate W. Specifically, the first elastic contact portion 81 contacts a portion between the radially outer end and a slightly inner side (inward of about 2 mm) from the radially outer end at the peripheral edge of the lower surface of the substrate W. is doing.
  • the first elastic contact portion 81 extends from the first fixing portion 80 so as to approach the lower surface of the substrate W as it goes outward in the radial direction.
  • the distance between the first elastic contact portion 81 and the substrate W in the vertical direction becomes smaller toward the outside in the rotational radial direction.
  • Support protrusions 82 that support the first elastic contact portions 81 from below are formed in the region between the holding pins 20 adjacent to each other in the rotation direction S at the peripheral edge of the upper surface of the protective disk 10.
  • FIG. 4B is an enlarged view of the periphery of the first fixing unit 80 in FIG. 4A.
  • screw 83 includes a screw shaft 83a in which a male screw portion is formed, and a head portion 83b protruding from one end in the axial direction of screw shaft 83a in a direction orthogonal to the axial direction.
  • the screw shaft 83 a is inserted (screwed) into a screw hole 84 formed in the protective disk 10.
  • the male screw portion formed on the screw shaft 83 a is screwed with the female screw portion formed on the inner peripheral surface of the screw hole 84.
  • the first fixing portion 80 is formed with an insertion hole 85 through which the screw shaft 83a is inserted, and an accommodation hole 86 that communicates with the insertion hole 85 and accommodates the head portion 83b.
  • the first fixing portion 80 is fixed to the protective disk 10 by sandwiching the bottom of the accommodation hole 86 between the head 83 b and the protective disk 10.
  • the first fixing portion 80 is in close contact with the protective disk 10 while being fixed to the protective disk 10 with screws 83. Therefore, regardless of the position of the protection disk 10, the entry of the airflow F from the space between the first entry suppression member 12 and the protection disk 10 into the space A between the lower surface of the substrate W and the protection disk 10 is suppressed. .
  • the first elastic contact portion 81 is separated from the lower surface of the substrate W when the protective disk 10 is in the separated position (see the two-dot chain line in FIG. 4A).
  • the first elastic contact portion 81 is in close contact with the lower surface of the substrate W in a state where the protective disk 10 is located at the close position (see a solid line in FIG. 4A). Therefore, in the state where the protective disk 10 is located at the close position, the air flow F enters the space A between the lower surface of the substrate W and the protective disk 10 from between the first entry suppression member 12 and the lower surface of the substrate W. It is suppressed.
  • the first entry suppression member 12 suppresses the entry of the airflow F into the space A between the lower surface of the substrate W and the protection disk 10 in a state where the protection disk 10 is located in the proximity position.
  • FIG. 5 is a schematic diagram of a cross section taken along line VV in FIG.
  • the second entry suppressing member 13 is a resin sheet.
  • the resin constituting the second entry suppressing member 13 is, for example, a synthetic resin.
  • Examples of the synthetic resin include PTFE, PFA, PP, PE, and the like.
  • the second entry suppression member 13 is an elastic member.
  • the second entry suppressing member 13 may be an elastic body such as rubber.
  • the holding pin 20 includes a sandwiching portion 20a that sandwiches the substrate W from the horizontal direction, and a facing portion 20b that extends substantially in the horizontal direction and faces the lower surface of the substrate W with a space therebetween.
  • the second entry suppressing member 13 includes a second fixing portion 90 fixed to the facing portion 20 b of the holding pin 20, a second elastic contact portion 91 that elastically contacts the peripheral portion of the lower surface of the substrate W, and the protective disk 10. , And a protection disk contact portion 92 that comes into contact with the peripheral edge of the protection disk 10 from above.
  • the second elastic contact portion 91 extends from the second fixing portion 90 so as to approach the lower surface of the substrate W as it goes outward in the radial direction. The distance between the second elastic contact portion 91 and the substrate W in the vertical direction becomes smaller toward the outer side in the radial direction.
  • the second fixing portion 90 is fixed to the holding pin 20 by being fixed to the facing portion 20b of the holding pin 20 with a resin screw 93, for example.
  • the facing portion 20 b of the holding pin 20 supports the substrate W from below via the second entry suppressing member 13.
  • the second fixing portion 90 is in close contact with the holding pin 20 in a state where the second fixing portion 90 is fixed to the corresponding holding pin 20 with a screw 93. Therefore, the entry of the airflow F from the space between the second entry suppressing member 13 and the holding pin 20 to the space A between the lower surface of the substrate W and the protective disk 10 is suppressed.
  • the second elastic contact portion 91 is in close contact with the lower surface of the substrate W in a state where the substrate W is held by the plurality of holding pins 20. Therefore, the entry of the airflow F from the space between the second entry suppressing member 13 and the lower surface of the substrate W into the space A between the lower surface of the substrate W and the protective disk 10 is suppressed.
  • the protective disk contact portion 92 extends from the second fixing portion 90 on the side opposite to the second elastic contact portion 91 (inward in the radial direction).
  • the protection disk contact portion 92 may be elastically deformed by being pushed up by the protection disk 10 so that the tip (radially inner end) moves upward in a state where the protection disk 10 is in the proximity position.
  • the protection disk contact portion 92 overlaps the portion 10b around the notch 10a on the upper surface of the protection disk 10 in plan view.
  • FIG. 6 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
  • the controller 3 includes a microcomputer and controls a control target provided in the substrate processing apparatus 1 according to a predetermined program. More specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which a program is stored, and the processor 3A executes various programs to execute various controls for substrate processing. It is configured. In particular, the controller 3 controls operations of the transfer robots IR and CR, the arm moving mechanism 37, the electric motor 23, the protective disk lifting / lowering unit 60, the opening / closing unit 25, the valves 42 and 52, and the like.
  • FIG. 7 is a flowchart for explaining an example of the substrate processing by the substrate processing apparatus 1, and mainly shows processing realized by the controller 3 executing a program.
  • an unprocessed substrate W is carried into the processing unit 2 from the carrier C by the transfer robots IR and CR, and delivered to the spin chuck 5 (step S1). Thereafter, the substrate W is held horizontally with an interval upward from the upper surface of the spin base 21 until it is unloaded by the transfer robot CR.
  • the opening / closing unit 25 holds the periphery of the substrate W on the plurality of holding pins 20 (substrate holding step, step S2). At this time, the substrate W is held by the plurality of holding pins 20 with the device surface on which the device is formed facing downward.
  • the protection disk lifting / lowering unit 60 raises the protection disk 10 to the proximity position (proximity process, step S3). Thereby, the first elastic contact portion 81 of the first entry suppressing member 12 contacts the lower surface of the substrate W.
  • the gas valve 52 is opened. Thereby, supply of gas, such as nitrogen gas, to the space A between the upper surface of the protective disk 10 and the lower surface of the substrate W is started (step S4).
  • the gas supply flow rate at this time is, for example, 100 L / min to 200 L / min.
  • the electric motor 23 rotates the spin base 21 in a state where the plurality of holding pins 20 hold the peripheral edge of the substrate W and the first entry suppressing member 12 is in contact with the lower surface of the substrate.
  • the substrate W held horizontally by the holding pins 20 rotates (substrate rotation step, step S5).
  • the rotation speed of the substrate W at this time is, for example, 500 rpm.
  • the rotation speed of the substrate W is not limited to 500 rpm, and may be any rotation speed between 100 rpm and 1000 rpm. It is.
  • the processing liquid valve 42 is opened while the supply of gas to the space A between the upper surface of the protective disk 10 and the lower surface of the substrate W is continued. Thereby, the supply of the processing liquid such as DIW to the upper surface of the rotating substrate W is started (processing liquid supply step, step S6).
  • step S7 scrub cleaning is executed. Specifically, the arm moving mechanism 37 moves the brush arm 35 and presses the brush 31 against the upper surface of the substrate W. Since the substrate W is rotated, the brush 31 is rubbed against the upper surface of the substrate W.
  • the arm moving mechanism 37 retracts the brush 31 from above the spin chuck 5 to the side thereof. Then, the processing liquid valve 42 is closed, and the supply of the processing liquid from the processing liquid nozzle 40 is stopped (step S8). Furthermore, the electric motor 23 accelerates the rotation of the spin base 21 (step S9). Thereby, a spin dry process for drying the substrate W is performed by shaking off the droplets on the upper surface and the peripheral end surface of the substrate W by centrifugal force.
  • the rotation speed of the substrate W during this spin dry process is, for example, 1500 rpm to 3000 rpm. In this way, the processing liquid is removed from the substrate W, and the substrate W is dried.
  • the electric motor 23 stops the rotation of the substrate W by the spin base 21 (step S10).
  • step S11 the gas valve 52 is closed, and the supply of the inert gas to the space A between the lower surface of the substrate W and the upper surface of the protective disk 10 is stopped (step S11).
  • step S12 the protection disk lifting / lowering unit 60 lowers the protection disk 10 to the separation position (step S12).
  • step S13 when the opening / closing unit 25 opens the plurality of holding pins 20, the substrate W is released from the holding by the plurality of holding pins 20 (step S13).
  • the transfer robot CR enters the processing unit 2, scoops up the processed substrate W from the spin chuck 5, and carries it out of the processing unit 2 (step S14).
  • the substrate W is transferred from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.
  • the spin base 21 can rotate around the rotation axis A ⁇ b> 1 with the plurality of holding pins 20 holding the peripheral edge of the substrate W.
  • an air flow is generated around the rotating structure.
  • an airflow F that flows between the lower surface of the substrate W and the protective disk 10 from the outside in the radial direction of the substrate W is likely to be generated (see FIG. 4A).
  • the first intrusion suppressing member 12 suppresses the entry of the airflow F into the space A between the peripheral edge of the lower surface of the substrate W and the protective disk 10.
  • the first entry suppression member 12 elastically contacts the lower surface of the substrate W, and the first entry suppression member 12 and the lower surface of the substrate W are in close contact with each other.
  • the first fixing portion 80 of the first entry suppression member 12 is fixed to the protection disk 10 by the screw 83, the first entry suppression member 12 and the protection disk 10 are in close contact regardless of the position of the protection disk 10. is doing. Therefore, the space between the lower surface of the substrate W and the protective disk 10 is closed. Therefore, even when the rotated substrate W is processed with the processing liquid, the liquid (such as a mist of the processing liquid generated by the substrate processing) rides on the air flow F and is between the lower surface of the substrate W and the protective disk 10. The entry into the space A can also be suppressed. Therefore, the lower surface of the substrate W can be well protected.
  • the gas is supplied to the space A between the protective disk 10 and the substrate W by the gas supply unit 11.
  • the gas supply unit 11 By supplying the gas to the space A between the protective disk 10 and the substrate W, an air flow (see FIG. 4A) from the space A between the substrate W and the protective disk 10 toward the outside of the space A is generated. be able to. Therefore, the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10 can be suppressed.
  • the radially outward airflow (see FIG. 4A) generated between the lower surface of the substrate W and the protective disk 10 is not only the pushing force by the gas supply by the gas supply unit 11 but also the rotation of the substrate W. Also due to centrifugal force.
  • the first elastic contact portion 81 extends from the first fixing portion 80 so as to approach the lower surface of the substrate W as it goes radially outward from the first fixing portion 80. Therefore, the radially outward airflow generated between the lower surface of the substrate W and the protective disk 10 tends to enter between the first elastic contact portion 81 and the lower surface of the substrate W. Then, a gap having a width necessary for the air flow to pass between the first elastic contact portion 81 and the lower surface of the substrate W is formed between the first elastic contact portion 81 and the lower surface of the substrate W. Thus, the first elastic contact portion 81 is elastically deformed. Then, the airflow is discharged outside from the space A between the lower surface of the substrate W and the protection disk 10 through the gap. Therefore, it is possible to prevent the pressure between the lower surface of the substrate W and the protective disk 10 from becoming excessively large, and to prevent the air flow F from entering the space A between the lower surface of the substrate W and the protective disk 10. Can be suppressed.
  • the air flow directed outward in the radial direction passes between the first elastic contact portion 81 and the lower surface of the substrate W, the space A between the lower surface of the substrate W and the protective disk 10 travels along the lower surface of the substrate W. It is possible to suppress the liquid from entering.
  • the second entry suppression member 13 extends from the space between the peripheral edge of the lower surface of the substrate W and the holding pin 20 to the space A between the peripheral edge of the lower surface of the substrate W and the protective disk 10.
  • the entry of the airflow F is suppressed.
  • the second entry suppression member 13 elastically contacts the lower surface of the substrate W, and the second entry suppression member 13 and the lower surface of the substrate W are in close contact with each other. To do.
  • the second entry suppressing member 13 and the holding pin 20 are in close contact. Therefore, the space between the lower surface of the substrate W and the protective disk 10 is closed.
  • a liquid (such as a mist of the processing liquid generated by the substrate processing) rides on the airflow F, and the space A between the lower surface of the substrate W and the holding pin 20 to the lower surface of the substrate W and the protective disk 10. Can be prevented from entering
  • the second elastic contact portion 91 extends from the second fixing portion 90 so as to approach the lower surface of the substrate W as it goes radially outward from the second fixing portion 90. Therefore, the airflow directed radially outward between the lower surface of the substrate W and the protective disk 10 tends to enter between the second elastic contact portion 91 and the lower surface of the substrate W. Then, a gap having a width necessary for the air flow to pass between the second elastic contact portion 91 and the lower surface of the substrate W is formed between the second elastic contact portion 91 and the lower surface of the substrate W. Thus, the second elastic contact portion 91 is elastically deformed. Then, the airflow is discharged outside from the space A between the lower surface of the substrate W and the protection disk 10 through the gap.
  • the air flow toward the outside in the radial direction passes between the second elastic contact portion 91 and the lower surface of the substrate W, the lower surface of the substrate W and the protective disk are transmitted around the holding pin 20 along the lower surface of the substrate W.
  • the liquid can be prevented from entering the space A between the two.
  • the first entry suppressing member 12 has an air flow F to the space A between the lower surface of the substrate W and the protective disk 10 in the region between the holding pins 20 adjacent in the rotation direction S. Suppresses the entry.
  • the second entry suppressing member 13 suppresses the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10 around the holding pin 20. Therefore, in the relatively wide range (substantially the entire circumference) of the rotation direction S, it is possible to suppress the inflow of airflow into the space A between the lower surface of the substrate W and the protective disk 10.
  • the head 83 b of the screw 83 is accommodated in the accommodation hole 86. Therefore, the first entry suppressing member 12 can be fixed to the protective disk 10 by the screw 83 without hindering the airflow directed radially outward between the lower surface of the substrate W and the protective disk 10.
  • step S3 gas supply (step S3) and gas supply stop (step S10) are not performed in the substrate processing. Even in these cases, the gas between the lower surface of the substrate W and the protective disk 10 moves radially outward due to the centrifugal force when the substrate W rotates. Therefore, the first elastic contact portion 81 is elastically deformed and discharged from the space A between the lower surface of the substrate W and the protection disk 10 to the outside.
  • the pressure between the lower surface of the substrate W and the protective disk 10 becomes lower than the external pressure, resulting in a negative pressure state. Therefore, the first elastic contact portion 81 is further adhered to the lower surface of the substrate. Accordingly, it is possible to further suppress the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10.
  • the second entry suppressing member 13 includes the protective disk contact portion 92 that comes into contact with the peripheral edge portion of the protective disk 10 from above in a state where the protective disk 10 is in the proximity position. Therefore, the airflow that enters the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and each holding pin 20 until it flows between the lower surface of the substrate W and the protective disk 10. Can block the way. Therefore, it is possible to suppress the generation of airflow that flows into the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and the holding pin 20.
  • the protective disk contact portion 92 is elastically deformed so that the tip (radially inner end) moves upward in a state where the protective disk 10 is in the proximity position, the gap between the protective disk 10 and the holding pin 20 is sufficient. Generation of airflow flowing into the space A between the lower surface of the substrate W and the protective disk 10 can be further suppressed.
  • FIG. 8 is a schematic diagram of the periphery of the first entry suppressing member 12P according to the first modification of the present embodiment.
  • the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted.
  • the first entry suppressing member 12P according to the first modification is formed of a sponge-like porous material.
  • the porous material include fluororesin, PVA, PP, and PE.
  • the first entry suppressing member 12P is provided on the first fixing portion 87 fixed to the protective disk 10 and the peripheral edge portion of the lower surface of the substrate W and the peripheral edge portion of the upper surface of the protective disk 10 in a state where the protective disk 10 is positioned in the proximity position.
  • the first contact portion 88 that comes into contact with the first fixing portion 87 and the first connection portion 89 that connects the first contact portion 88 are integrally included.
  • fixed part 87 is being fixed to the protection disk 10 with the screw
  • the first entry suppressing member 12P is formed of a porous material. Therefore, the first entry suppressing member 12P can pass the gas by receiving a pressure of a predetermined value or more from the gas.
  • the pressure in the space A between the lower surface of the substrate W and the protective disk 10 may be a predetermined value or more around the first entry suppressing member 12P. In this case, the gas in the space A between the lower surface of the substrate W and the protective disk 10 passes through the first entry suppressing member 12P and is discharged to the outside.
  • the gas is not actively supplied into the space radially outward from the first entry suppression member 12P by the gas supply unit 11 or centrifugal force. Therefore, in the space radially outward from the first entry suppression member 12P, the pressure is less likely to increase compared to the portion around the first entry suppression member 12P in the space A. Therefore, the first entry suppressing member 12P can suppress the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10 from the radially outer side.
  • the first entry suppressing member 12P is formed of a porous material. Therefore, it is difficult for the mist of the processing liquid to pass through the first entry suppressing member 12P. Therefore, it is possible to further suppress the liquid from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
  • FIG. 9 is a schematic diagram of the periphery of the holding pin 20 according to a second modification of the present embodiment.
  • the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted.
  • the second entry suppressing member 13P according to the second modification is formed of a sponge-like porous material.
  • the porous material include fluororesin, PVA, PP, and PE.
  • the second entry suppressing member 13P includes a second fixing portion 97 fixed to the facing portion 20b of the holding pin 20, a second contact portion 98 that contacts the peripheral portion of the lower surface of the substrate W and the facing portion 20b, and a second fixing.
  • the second connecting part 99 that connects the part 97 and the second contact part 98 and the protective disk contact part 96 that contacts the peripheral edge of the protective disk 10 from above in the state where the protective disk 10 is in the close position are integrally included. .
  • fixed part 97 is being fixed to the opposing part 20b with the screw 93 similarly to the 2nd fixing
  • the protective disk contact portion 96 extends from the second fixing portion 97 on the side opposite to the second connecting portion 99.
  • the protective disk contact portion 96 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view.
  • the second entry suppressing member 13P since the second entry suppressing member 13P is formed of a porous material, gas can pass therethrough. Therefore, the second entry suppressing member 13P can pass the gas by receiving a predetermined pressure from the gas.
  • the gas is not actively supplied to the space radially outward from the second entry suppressing member 13P by the gas supply unit 11 or centrifugal force. Therefore, in the space radially outward from the second entry suppression member 13P, the pressure is less likely to increase as compared to the portion around the second entry suppression member 13P in the space A. Therefore, it is possible to prevent the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
  • the second entry suppressing member 13P is formed of a porous material, it is difficult for the mist of the processing liquid to pass therethrough. Therefore, it is possible to further suppress the liquid from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
  • the second entry suppressing member 13P includes a protective disk contact portion 96 that contacts the peripheral edge of the protective disk 10 from above in a state where the protective disk 10 is in the proximity position. Therefore, the airflow that enters the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and each holding pin 20 until it flows between the lower surface of the substrate W and the protective disk 10. Can block the way. Therefore, it is possible to suppress the generation of airflow that flows into the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and the holding pin 20.
  • FIG. 10 is a schematic diagram of the periphery of the holding pin 20 according to a third modification of the present embodiment.
  • the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted.
  • the second fixing portion 90 of the second entry restraining member 13Q according to the third modification extends substantially horizontally between the substrate W and the protective disk 10. It is fixed to the member 15.
  • the extending member 15 faces the protective disk 10 from above.
  • the extending member 15 has a substantially semicircular arc shape in plan view.
  • the extending member 15 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view.
  • the facing portion 20b of the holding pin 20 is inclined with respect to the horizontal direction, and contacts the substrate W from below and supports the substrate W.
  • the extending member 15 is connected to the lower end of the facing portion 20b, and includes an inclined portion 15a that is inclined with respect to the horizontal direction at substantially the same angle as the facing portion 20b.
  • the second fixing portion 90 of the third modification is fixed to the inclined portion 15 a of the extending member 15.
  • the second fixing portion 90 of the third modification is fixed to the holding pin 20 via the extending member 15.
  • the second entry suppression member 13Q according to the third modification is a resin sheet as in the present embodiment. Unlike the third modified example, the second entry suppressing member 13Q may be formed of a sponge-like porous material in the same manner as the second entry suppressing member 13P (see FIG. 9) according to the second modified example.
  • the protective disk 10 if the lower surface of the extending member 15 is configured to come into contact with the upper surface (peripheral edge portion) of the protective disk 10 in a state where the protective disk 10 is in the proximity position, the protective disk The air current can be prevented from entering the space A between the lower surface of the substrate W and the protective disk 10 from between the holding pins 20 and the holding pins 20.
  • the treatment liquid nozzle 40 may be a two-fluid nozzle that ejects droplets of the treatment liquid onto the upper surface of the substrate W together with a gas.
  • a gas supply pipe that supplies a gas such as nitrogen gas to the processing liquid nozzle 40 is connected to the processing liquid nozzle 40, and whether or not gas is supplied to the processing liquid nozzle 40 in the gas supply pipe A gas valve for switching between is installed. And gas is supplied to the process liquid nozzle 40 from a gas supply source via a gas supply pipe.
  • the cleaning unit 9 is not provided, and a chemical solution supply unit that supplies a chemical solution may be provided instead.
  • the chemical solution supply unit includes a chemical solution supply nozzle that supplies the chemical solution to the upper surface of the substrate W.
  • Examples of the chemical solution supplied from the chemical solution supply nozzle include HF (hydrogen fluoride water), SPM (sulfuric acid hydrogen peroxide solution mixture), SC1 (ammonia hydrogen peroxide solution mixture), and SC2 (hydrochloric acid hydrogen peroxide solution mixture). ) And the like.
  • the chemical solution supply nozzle may be a two-fluid nozzle.
  • the substrate processing apparatus having this configuration, after the upper surface of the substrate W is processed by the chemical liquid supplied from the chemical liquid supply unit, the upper surface of the substrate W is rinsed by DIW or the like supplied from the processing liquid supply unit 8. . Then, similarly to the substrate processing in the above-described embodiment, the substrate W is dried by spin drying.
  • the gas exclusion unit which excludes the gas of the space A between the lower surface of the board
  • the protective disk 10 does not necessarily have to face the peripheral edge of the substrate W, and may have a circular shape smaller than the substrate W in plan view. Even in this case, the first elastic contact portion 81 and the second elastic contact portion 91 have a radially outer end at the peripheral edge of the lower surface of the substrate W and slightly inward (2 mm) from the radially outer end. It is preferable that it is in contact with the portion between the inner portion and the inner portion.
  • Substrate processing apparatus 10 Protection disk (opposing member) 12: 1st approach suppression member (elastic member) 12P: 1st approach suppression member (elastic member) 13: 2nd approach control member 13P: 2nd approach control member 13Q: 2nd approach control member 20: Holding pin 21: Spin base (base) 80: 1st fixed part 81: 1st elastic contact part 90: 2nd fixed part 91: 2nd elastic contact part A: Space A1: Rotation axis F: Airflow S: Rotation direction W: Substrate

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Abstract

This substrate processing apparatus comprises: a base which rotates around a vertical rotation axis line; a plurality of holding pins provided, on the base, at intervals along the rotation direction of the base, and holding a peripheral edge portion of the substrate above the base; a facing member disposed between the base and the substrate, and capable of lifting and lowering between a separated position spaced downward from the substrate and a proximate position closer to the substrate than the separated position, wherein the facing member faces the substrate from below; and a first entry prevention member which is provided on the facing member and prevents airflow from entering a space between the facing member and the bottom surface of the substrate while the facing member is positioned at the proximate position.

Description

基板処理装置および基板処理方法Substrate processing apparatus and substrate processing method
　この発明は、基板を処理する基板処理装置および基板処理方法に関する。処理対象になる基板には、たとえば、半導体ウエハ、液晶表示装置用基板、有機ＥＬ（Electroluminescence）表示装置等のＦＰＤ（Flat Panel Display）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板等の基板が含まれる。 The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) such as organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and magneto-optical disks. Substrates such as a substrate, a photomask substrate, a ceramic substrate, and a solar cell substrate are included.
　基板を１枚ずつ処理する枚葉式の基板処理装置は、鉛直方向に沿う回転軸線まわりに回転可能なスピンベースと、スピンベースに設けられ、基板を保持する保持ピンとを含む。このような基板処理装置を用いた基板処理では、処理液ノズルから吐出された処理液によって、回転状態の基板の上面を処理することができる。 A single-wafer type substrate processing apparatus that processes substrates one by one includes a spin base that can rotate about a rotation axis along the vertical direction, and a holding pin that is provided on the spin base and holds the substrate. In the substrate processing using such a substrate processing apparatus, the upper surface of the rotating substrate can be processed by the processing liquid discharged from the processing liquid nozzle.
　しかし、基板処理中には、回転する構造物（スピンベースや保持ピン）の周囲に気流が発生することがある。基板処理中に発生した処理液のミスト（微小な液滴）は、気流に乗って基板の下方に回り込み、基板の下面に処理液が付着するおそれがある。そのため、基板の上面および周縁を伝って基板の下面に付着することを防止した場合であっても、基板の下面に処理液が付着するおそれがある。 However, air current may be generated around the rotating structure (spin base or holding pin) during substrate processing. A mist (minute droplets) of the processing liquid generated during the substrate processing rides on the air current and flows under the substrate, and the processing liquid may adhere to the lower surface of the substrate. Therefore, even if it is a case where it adheres to the lower surface of a board | substrate along the upper surface and periphery of a board | substrate, there exists a possibility that a process liquid may adhere to the lower surface of a board | substrate.
　そこで、下記特許文献１に記載の基板処理装置では、基板の下面とスピンベースとの間に保護ディスクを設けることによって、基板の下面を保護しながら基板の上面を処理する基板処理が提案されている。 Therefore, in the substrate processing apparatus described in Patent Document 1 below, substrate processing is proposed in which a protective disk is provided between the lower surface of the substrate and the spin base, thereby processing the upper surface of the substrate while protecting the lower surface of the substrate. Yes.
米国特許出願公開第２０１６／０９６２０５号明細書US Patent Application Publication No. 2016/096205
　特許文献１に記載の基板処理装置では、保護ディスクをスピンベースから浮上させて基板の下面に接近させることによって、保護ディスクと基板の下面との間の空間への処理液のミストの進入を抑制することができる。しかし、保護ディスクを基板の下面に接近させた場合であっても、保護ディスクと基板との間には、隙間が設けられている。そのため、処理液のミストがその隙間を通って基板の下面に付着するおそれがある。 In the substrate processing apparatus described in Patent Document 1, the mist of the processing liquid is prevented from entering the space between the protective disk and the lower surface of the substrate by floating the protective disk from the spin base and approaching the lower surface of the substrate. can do. However, even when the protective disk is brought close to the lower surface of the substrate, a gap is provided between the protective disk and the substrate. Therefore, the mist of the processing liquid may adhere to the lower surface of the substrate through the gap.
　そこで、この発明の１つの目的は、基板の下面を良好に保護することができる基板処理装置および基板処理方法を提供することである。 Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of satisfactorily protecting the lower surface of the substrate.
　この発明の一実施形態は、鉛直方向に沿う回転軸線まわりに回転するベースと、前記ベースの回転方向に互いに間隔を隔てて前記ベースに設けられ、前記ベースよりも上方で前記基板の周縁部を保持する複数の保持ピンと、前記ベースと前記基板との間に配置され、前記基板から下方に離間した離間位置と、前記離間位置よりも前記基板に近接した近接位置との間で昇降可能であり、前記基板に下方から対向する対向部材と、前記対向部材に設けられ、前記対向部材が前記近接位置に位置する状態で、前記基板の下面と前記対向部材との間の空間への気流の進入を抑制する第１進入抑制部材とを含む、基板処理装置を提供する。 According to an embodiment of the present invention, a base that rotates about a rotation axis along a vertical direction and a base that is spaced apart from each other in the rotational direction of the base are provided, and a peripheral portion of the substrate is disposed above the base. It is arranged between a plurality of holding pins to be held, a separation position that is disposed between the base and the substrate, and is spaced downward from the substrate, and a proximity position that is closer to the substrate than the separation position. A counter member facing the substrate from below, and an air current entering a space between the lower surface of the substrate and the counter member provided in the counter member, the counter member being positioned at the proximity position. A substrate processing apparatus is provided, including a first entry suppressing member that suppresses the above.
　この構成によれば、ベースは、複数の保持ピンに基板の周縁部を保持させた状態で回転軸線まわりに回転可能である。前述したように、回転する構造物の周囲には、気流が発生する。たとえば、基板の回転径方向の外方から基板の下面と対向部材との間に流れ込む気流が発生しやすい。対向部材を近接位置に位置させた状態では、基板の下面と対向部材との間の空間への気流の進入が第１進入抑制部材によって抑制されている。したがって、液体が気流に乗って基板の下面と対向部材との間の空間へ進入することも抑制することができる。よって、基板の下面を良好に保護することができる。 According to this configuration, the base can rotate around the rotation axis in a state where the peripheral edge of the substrate is held by the plurality of holding pins. As described above, an air flow is generated around the rotating structure. For example, an airflow that flows between the lower surface of the substrate and the opposing member tends to be generated from the outside in the rotation radial direction of the substrate. In a state in which the facing member is positioned at the close position, the first intrusion suppressing member suppresses the inflow of airflow into the space between the lower surface of the substrate and the facing member. Therefore, the liquid can also be prevented from entering the space between the lower surface of the substrate and the opposing member by riding on the airflow. Therefore, the lower surface of the substrate can be well protected.
　なお、回転径方向とは、回転軸線に対する直交方向のことである。また、回転径方向の内方とは、回転径方向において回転軸線側に向かう方向である。また、回転径方向の外方とは、回転径方向において回転軸線側とは反対側に向かう方向である。 In addition, the rotation diameter direction is a direction orthogonal to the rotation axis. Further, the inner side in the rotational radial direction is a direction toward the rotational axis in the rotational radial direction. Further, the outward direction in the rotational radial direction is a direction toward the side opposite to the rotational axis side in the rotational radial direction.
　この発明の一実施形態では、前記第１進入抑制部材が、前記対向部材に固定された第１固定部と、前記基板の回転径方向の外方に向かうにしたがって前記基板の下面に近づくように前記第１固定部から延び、前記基板の下面の周縁部に弾性的に接触する第１弾性接触部とを含む。 In one embodiment of the present invention, the first entry suppression member is closer to the lower surface of the substrate as it goes outward in the rotational radial direction of the substrate and the first fixing portion fixed to the opposing member. A first elastic contact portion extending from the first fixed portion and elastically contacting a peripheral portion of the lower surface of the substrate.
　この構成によれば、第１弾性接触部は、第１固定部から基板の回転径方向の外方に向かうにしたがって基板の下面に近づくように第１固定部から延びる。そのため、基板の下面と対向部材との間に回転径方向の外方に向かう気流が生じた際、その気流が第１弾性接触部と基板の下面との間に入り込みやすい。そして、この気流は、第１弾性接触部と基板の下面との間を通過するのに必要な幅を有する隙間が第１弾性接触部と基板の下面との間に形成されるように第１弾性接触部を弾性変形させる。そして、この気流は、その隙間を通って基板の下面と対向部材との間の空間から外部に排出される。そのため、基板の下面と対向部材との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板の下面と対向部材との間の空間への気流の進入を抑制することができる。 According to this configuration, the first elastic contact portion extends from the first fixing portion so as to approach the lower surface of the substrate as it goes outward from the first fixing portion in the rotational radial direction of the substrate. Therefore, when an air flow directed outward in the rotational radial direction is generated between the lower surface of the substrate and the opposing member, the air flow easily enters between the first elastic contact portion and the lower surface of the substrate. The airflow is first such that a gap having a width necessary to pass between the first elastic contact portion and the lower surface of the substrate is formed between the first elastic contact portion and the lower surface of the substrate. The elastic contact portion is elastically deformed. And this airflow is discharged | emitted outside from the space between the lower surface of a board | substrate and an opposing member through the clearance gap. Therefore, it is possible to prevent an excessive increase in pressure between the lower surface of the substrate and the opposing member, and it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member.
　この発明の一実施形態では、前記第１進入抑制部材が、多孔質材料によって形成されている。 In one embodiment of the present invention, the first entry suppressing member is made of a porous material.
　この構成によれば、第１進入抑制部材は、多孔質材料によって形成されている。そのため、第１進入抑制部材は、気体から所定の値以上の圧力を受けることによって、その気体を通過させることができる。基板の下面と対向部材との間に回転径方向の外方に向かう気流が生じ、この気流に起因して第１進入抑制部材の周辺において基板の下面と対向部材との間の圧力が所定の値以上となることがある。この場合、基板の下面と対向部材との間の空間内の気体は、第１進入抑制部材を通過して外部に排出される。その一方で、第１進入抑制部材は、基板の下面と対向部材との間の空間への気流の進入を抑制できる。そのため、基板の下面と対向部材との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板の下面と対向部材との間の空間への気流の進入を抑制することができる。 According to this configuration, the first entry suppression member is formed of a porous material. Therefore, the 1st approach suppression member can let the gas pass by receiving the pressure more than a predetermined value from gas. An air flow directed outward in the radial direction is generated between the lower surface of the substrate and the opposing member. Due to this air flow, the pressure between the lower surface of the substrate and the opposing member around the first entry suppression member is a predetermined value. May be more than the value. In this case, the gas in the space between the lower surface of the substrate and the opposing member passes through the first entry suppressing member and is discharged to the outside. On the other hand, the first entry suppression member can suppress the entry of airflow into the space between the lower surface of the substrate and the opposing member. Therefore, it is possible to prevent an excessive increase in pressure between the lower surface of the substrate and the opposing member, and it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member.
　また、第１進入抑制部材は、多孔質材料によって形成されているため、液体を通過させにくい。したがって、外部から基板の下面と対向部材との間の空間への液体の進入を一層抑制することができる。 In addition, since the first entry suppressing member is formed of a porous material, it is difficult for the liquid to pass therethrough. Therefore, it is possible to further suppress the entry of the liquid from the outside into the space between the lower surface of the substrate and the opposing member.
　この発明の一実施形態では、前記基板処理装置は、前記保持ピンに設けられ、前記基板の下面の周縁部と前記保持ピンとの間から前記基板の下面の周縁部と前記対向部材との間の空間への気流の進入を抑制する第２進入抑制部材をさらに含む。 In one embodiment of the present invention, the substrate processing apparatus is provided on the holding pin, and is between the peripheral edge on the lower surface of the substrate and the holding pin and between the peripheral edge on the lower surface of the substrate and the opposing member. It further includes a second entry suppression member that suppresses the entry of the airflow into the space.
　この構成によれば、第２進入抑制部材は、基板の下面の周縁部と保持ピンとの間から基板の下面と対向部材との間の空間への気流の進入を抑制する。そのため、液体が気流に乗って基板の下面の周縁部と保持ピンとの間から基板の下面と対向部材との間の空間へ進入することを抑制することができる。 According to this configuration, the second entry suppressing member suppresses the inflow of airflow from between the peripheral portion of the lower surface of the substrate and the holding pin to the space between the lower surface of the substrate and the opposing member. Therefore, it is possible to suppress the liquid from entering the space between the peripheral portion of the lower surface of the substrate and the holding pin and entering the space between the lower surface of the substrate and the opposing member by riding on the airflow.
　この発明の一実施形態では、前記第２進入抑制部材が、前記保持ピンに固定された第２固定部と、前記基板の回転径方向の外方に向かうにしたがって前記基板の下面に近づくように前記第２固定部から延び、前記基板の下面の周縁部に弾性的に接触する第２弾性接触部とを含む。 In one embodiment of the present invention, the second entry suppressing member is closer to the lower surface of the substrate as it goes outward in the rotational radial direction of the substrate and the second fixing portion fixed to the holding pin. A second elastic contact portion extending from the second fixing portion and elastically contacting a peripheral portion of the lower surface of the substrate.
　この構成によれば、第２弾性接触部は、第２固定部から基板の回転径方向の外方に向かうにしたがって基板の下面に近づくように第２固定部から延びる。そのため、基板の下面と対向部材との間に回転径方向の外方に向かう気流が生じた際、その気流が第２弾性接触部と基板の下面との間に入り込みやすい。そして、この気流は、第２弾性接触部と基板の下面との間を通過するのに必要な幅を有する隙間が第２弾性接触部と基板の下面との間に形成されるように第２弾性接触部を弾性変形させる。そして、この気流は、その隙間を通って基板の下面と対向部材との間の空間から外部に排出される。そのため、基板の下面と対向部材との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板の下面の周縁部と保持ピンとの間から基板の下面と対向部材との間の空間への気流の進入を抑制することができる。 According to this configuration, the second elastic contact portion extends from the second fixed portion so as to approach the lower surface of the substrate as it goes outward from the second fixed portion in the rotation radial direction of the substrate. Therefore, when an air flow directed outward in the rotational radial direction is generated between the lower surface of the substrate and the opposing member, the air flow easily enters between the second elastic contact portion and the lower surface of the substrate. The airflow is secondly formed such that a gap having a width necessary to pass between the second elastic contact portion and the lower surface of the substrate is formed between the second elastic contact portion and the lower surface of the substrate. The elastic contact portion is elastically deformed. And this airflow is discharged | emitted outside from the space between the lower surface of a board | substrate and an opposing member through the clearance gap. Therefore, the pressure between the lower surface of the substrate and the opposing member can be prevented from becoming excessively large, and the space between the peripheral portion of the lower surface of the substrate and the holding pin and the space between the lower surface of the substrate and the opposing member can be prevented. It is possible to suppress the entry of the airflow into the.
　この発明の一実施形態では、前記第２進入抑制部材が、多孔質材料によって形成されている。 In one embodiment of the present invention, the second entry suppressing member is made of a porous material.
　この構成によれば、第２進入抑制部材は、多孔質材料によって形成されている。そのため、第２進入抑制部材は、気体から所定の値以上の圧力を受けることによって、その気体を通過させることができる。基板の下面と対向部材との間に回転径方向の外方に向かう気流が生じ、この気流に起因して第２進入抑制部材の周辺において基板の下面と対向部材との間の圧力が所定の値以上となることがある。この場合、基板の下面と対向部材との間の空間内の気体は、基板の下面と対向部材との間の空間から外部に排出される。その一方で、基板の下面と対向部材との間の空間に外部から気流が進入することを抑制できる。そのため、基板の下面と対向部材との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板の下面の周縁部と保持ピンとの間から基板の下面と対向部材との間の空間への気流の進入を抑制することができる。 According to this configuration, the second entry suppressing member is formed of a porous material. Therefore, the 2nd approach suppression member can let the gas pass by receiving the pressure more than a predetermined value from gas. An airflow directed outward in the radial direction is generated between the lower surface of the substrate and the opposing member, and due to this airflow, the pressure between the lower surface of the substrate and the opposing member around the second entry suppression member is predetermined. May be more than the value. In this case, the gas in the space between the lower surface of the substrate and the counter member is discharged outside from the space between the lower surface of the substrate and the counter member. On the other hand, it is possible to suppress the airflow from entering the space between the lower surface of the substrate and the facing member. Therefore, the pressure between the lower surface of the substrate and the opposing member can be prevented from becoming excessively large, and the space between the peripheral portion of the lower surface of the substrate and the holding pin and the space between the lower surface of the substrate and the opposing member can be prevented. It is possible to suppress the entry of the airflow into the.
　また、第２進入抑制部材は、多孔質材料によって形成されているため、液体を通過させにくい。したがって、外部から基板の下面と対向部材との間の空間への液体の進入を一層抑制することができる。 In addition, since the second entry suppressing member is made of a porous material, it is difficult for the liquid to pass therethrough. Therefore, it is possible to further suppress the entry of the liquid from the outside into the space between the lower surface of the substrate and the opposing member.
　この発明の一実施形態では、前記第１進入抑制部材は、前記回転方向に隣り合う前記保持ピンの間の領域において、前記基板の下面と前記対向部材との間の空間への気流の進入を抑制する。そして、前記第２進入抑制部材は、各前記保持ピンの周囲において、前記基板の下面と前記対向部材との間の空間への気流の進入を抑制する。 In one embodiment of the present invention, the first entry suppression member prevents an air flow from entering a space between the lower surface of the substrate and the opposing member in a region between the holding pins adjacent in the rotation direction. Suppress. And the said 2nd approach suppression member suppresses the approach of the airflow to the space between the lower surface of the said board | substrate and the said opposing member in the circumference | surroundings of each said holding pin.
　この構成によれば、第１進入抑制部材は、回転方向に隣り合う保持ピンの間の領域において、基板の下面と対向部材との間の空間への気流の進入を抑制する。そして、第２進入抑制部材は、保持ピンの周囲において、基板の下面と対向部材との間の空間への気流の進入を抑制する。したがって、回転方向の比較的広い範囲（ほぼ全周）において、基板の下面と対向部材との間の空間への気流の進入を抑制することができる。 According to this configuration, the first entry suppressing member suppresses the entry of the airflow into the space between the lower surface of the substrate and the opposing member in the region between the holding pins adjacent in the rotation direction. And a 2nd approach suppression member suppresses approach of the air current to the space between the lower surface of a board | substrate and an opposing member in the circumference | surroundings of a holding pin. Therefore, in the relatively wide range (substantially the entire circumference) in the rotation direction, it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member.
　この発明の一実施形態では、前記基板処理装置が、前記対向部材と前記基板との間に気体を供給する気体供給ユニットをさらに含む。 In one embodiment of the present invention, the substrate processing apparatus further includes a gas supply unit that supplies a gas between the facing member and the substrate.
　この構成によれば、気体供給ユニットによって、対向部材と基板との間に気体が供給される。対向部材と基板との間に気体が供給されることによって、基板の下面と対向部材との間の空間から当該空間の外部へ向かう気流を発生させることができる。そのため、基板の下面と対向部材との間の空間への気流の進入を抑制することができる。 According to this configuration, the gas is supplied between the facing member and the substrate by the gas supply unit. By supplying the gas between the facing member and the substrate, an air flow from the space between the lower surface of the substrate and the facing member toward the outside of the space can be generated. Therefore, it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member.
　この発明の一実施形態は、鉛直方向に沿う回転軸線まわりの回転方向に互いに間隔を隔ててベースに設けられた複数の保持ピンに、前記ベースよりも上方で基板の周縁部を保持させる基板保持工程と、前記基板に下方から対向する対向部材に固定された弾性部材が前記基板の下面に接触するように、前記対向部材を基板に近接させる近接工程と、前記複数の保持ピンが前記基板の周縁部を保持し、かつ、弾性部材が前記基板の下面に接触した状態で、前記ベースを回転させることによって基板を回転させる基板回転工程と、回転状態の基板の上面に、基板を処理する処理液を供給する処理液供給工程とを含む、基板処理方法を提供する。 In one embodiment of the present invention, a plurality of holding pins provided on a base at intervals in a rotation direction around a rotation axis along a vertical direction hold a peripheral edge of the substrate above the base. A proximity step of bringing the opposing member close to the substrate such that an elastic member fixed to the opposing member facing the substrate from below is in contact with the lower surface of the substrate; and the plurality of holding pins of the substrate A substrate rotating step of rotating the base by rotating the base while holding the peripheral edge and the elastic member is in contact with the lower surface of the substrate, and a process of processing the substrate on the upper surface of the rotated substrate There is provided a substrate processing method including a processing liquid supply step for supplying a liquid.
　この方法によれば、弾性部材が基板の下面に接触した状態で、基板が回転される。前述したように、回転する構造物の周囲には、気流が発生する。たとえば、基板の回転径方向の外方から基板の下面と対向部材との間に流れ込む気流が発生しやすい。弾性部材を基板の下面に接触させることによって弾性部材と基板との間が塞がれるので、基板の下面と対向部材との間が塞がれる。そのため、基板の下面と対向部材との間の空間への気流の進入を抑制することができる。したがって、回転状態の基板を処理液で処理する場合であっても、処理液のミストが気流に乗って基板の下面と対向部材との間の空間へ進入することも抑制することができる。よって、基板の下面を良好に保護することができる。 According to this method, the substrate is rotated while the elastic member is in contact with the lower surface of the substrate. As described above, an air flow is generated around the rotating structure. For example, an airflow that flows between the lower surface of the substrate and the opposing member tends to be generated from the outside in the rotation radial direction of the substrate. By bringing the elastic member into contact with the lower surface of the substrate, the space between the elastic member and the substrate is closed, so that the space between the lower surface of the substrate and the opposing member is closed. Therefore, it is possible to suppress the inflow of airflow into the space between the lower surface of the substrate and the opposing member. Therefore, even when the rotating substrate is processed with the processing liquid, it is possible to prevent the mist of the processing liquid from entering the space between the lower surface of the substrate and the opposing member by riding on the airflow. Therefore, the lower surface of the substrate can be well protected.
　本発明における上述の、またはさらに他の目的、特徴および効果は、添付図面を参照して次に述べる実施形態の説明により明らかにされる。 The above-described or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.
図１は、この発明の第１実施形態に係る基板処理装置の内部のレイアウトを説明するための模式的な平面図である。FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention. 図２は、前記基板処理装置に備えられた処理ユニットの構成例を説明するための模式図である。FIG. 2 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus. 図３は、前記基板処理装置に備えられたスピンベースの模式的な平面図である。FIG. 3 is a schematic plan view of a spin base provided in the substrate processing apparatus. 図４Ａは、図３のＩＶＡ－ＩＶＡ線に沿った断面の模式図である。4A is a schematic diagram of a cross section taken along the line IVA-IVA of FIG. 図４Ｂは、図４Ａの第１固定部の周辺の拡大図である。FIG. 4B is an enlarged view of the periphery of the first fixing portion of FIG. 4A. 図５は、図３のＶ－Ｖ線に沿った断面の模式図である。FIG. 5 is a schematic diagram of a cross section taken along line VV of FIG. 図６は、前記基板処理装置の主要部の電気的構成を説明するためのブロック図である。FIG. 6 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus. 図７は、前記基板処理装置による基板処理の一例を説明するための流れ図である。FIG. 7 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus. 図８は、本実施形態の第１変形例に係る第１進入抑制部材の周辺の模式図である。FIG. 8 is a schematic diagram of the periphery of the first entry suppressing member according to the first modification of the present embodiment. 図９は、本実施形態の第２変形例に係る第２進入抑制部材の周辺の模式図である。FIG. 9 is a schematic diagram of the periphery of the second entry suppressing member according to the second modification of the present embodiment. 図１０は、本実施形態の第３変形例に係る第２進入抑制部材の周辺の模式図である。FIG. 10 is a schematic view of the periphery of the second entry suppressing member according to the third modification of the present embodiment.
　図１は、この発明の一実施形態に係る基板処理装置１の内部のレイアウトを説明するための図解的な平面図である。 FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention.
　基板処理装置１は、シリコンウエハなどの基板Ｗを一枚ずつ処理する枚葉式の装置である。この実施形態では、基板Ｗは、円板状の基板である。基板処理装置１は、薬液やリンス液などの処理液で基板Ｗを処理する複数の処理ユニット２と、処理ユニット２で処理される複数枚の基板Ｗを収容するキャリヤＣが載置されるロードポートＬＰと、ロードポートＬＰと処理ユニット２との間で基板Ｗを搬送する搬送ロボットＩＲおよびＣＲと、基板処理装置１を制御するコントローラ３とを含む。搬送ロボットＩＲは、キャリヤＣと搬送ロボットＣＲとの間で基板Ｗを搬送する。搬送ロボットＣＲは、搬送ロボットＩＲと処理ユニット２との間で基板Ｗを搬送する。複数の処理ユニット２は、たとえば、同様の構成を有している。 The substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 has a load on which a plurality of processing units 2 for processing a substrate W with a processing solution such as a chemical solution or a rinsing solution, and a carrier C for storing a plurality of substrates W processed by the processing unit 2 are placed. It includes a port LP, transfer robots IR and CR that transfer the substrate W between the load port LP and the processing unit 2, and a controller 3 that controls the substrate processing apparatus 1. The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.
　図２は、処理ユニット２の構成例を説明するための模式図である。 FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2.
　処理ユニット２は、スピンチャック５、処理液供給ユニット８、洗浄ユニット９、および保護ディスク１０を含む。スピンチャック５は、一枚の基板Ｗを水平な姿勢で保持しながら基板Ｗの中央部を通る鉛直な回転軸線Ａ１まわりに基板Ｗを回転させる。処理液供給ユニット８は、基板Ｗの上面に脱イオン水（Deionized Water: DIW）などの処理液を供給する。洗浄ユニット９は、基板Ｗの上面にブラシ３１を擦り付けて基板Ｗの上面を洗浄する。保護ディスク１０は、基板Ｗに下方から対向し、基板処理中に発生した処理液のミストから基板Ｗの下面を保護する。 The processing unit 2 includes a spin chuck 5, a processing liquid supply unit 8, a cleaning unit 9, and a protective disk 10. The spin chuck 5 rotates the substrate W around a vertical rotation axis A1 passing through the central portion of the substrate W while holding one substrate W in a horizontal posture. The treatment liquid supply unit 8 supplies a treatment liquid such as deionized water (Deionized Water) to the upper surface of the substrate W. The cleaning unit 9 cleans the upper surface of the substrate W by rubbing the brush 31 against the upper surface of the substrate W. The protective disk 10 faces the substrate W from below, and protects the lower surface of the substrate W from a mist of processing liquid generated during substrate processing.
　保護ディスク１０は、基板Ｗの少なくとも周縁部に下方から対向する対向部材の一例である。処理ユニット２は、基板Ｗの下面と保護ディスク１０との間の空間Ａに窒素（Ｎ２）ガスなどの気体を供給する気体供給ユニット１１をさらに含む。 The protective disk 10 is an example of a facing member that faces at least the peripheral edge of the substrate W from below. The processing unit 2 further includes a gas supply unit 11 that supplies a gas such as nitrogen (N 2 ) gas to the space A between the lower surface of the substrate W and the protective disk 10.
　処理ユニット２は、スピンチャック５を収容するチャンバ１６（図１参照）をさらに含む。チャンバ１６には、チャンバ１６内に基板Ｗを搬入したり、チャンバ１６内から基板Ｗを搬出したりするための出入口（図示せず）が形成されている。チャンバ１６には、この出入口を開閉するシャッタユニット（図示せず）が備えられている。 The processing unit 2 further includes a chamber 16 (see FIG. 1) that houses the spin chuck 5. In the chamber 16, an entrance (not shown) for carrying the substrate W into the chamber 16 and carrying the substrate W out of the chamber 16 is formed. The chamber 16 is provided with a shutter unit (not shown) that opens and closes the entrance.
　スピンチャック５は、回転軸線Ａ１まわりに回転可能なスピンベース２１（ベース）と、スピンベース２１よりも上方で基板Ｗの周縁部を保持する複数の保持ピン２０と、スピンベース２１の中央に結合された回転軸２２と、回転軸２２に回転力を与える電動モータ２３とを含む。回転軸２２は、回転軸線Ａ１に沿って鉛直方向に延びている。回転軸２２は、スピンベース２１を貫通しており、スピンベース２１よりも上方に上端を有する。スピンベース２１は、水平方向に沿う円板形状を有している。複数の保持ピン２０は、回転方向Ｓに間隔を空けてスピンベース２１の上面の周縁部に設けられている（後述する図３も参照）。 The spin chuck 5 is coupled to a spin base 21 (base) that can rotate around the rotation axis A <b> 1, a plurality of holding pins 20 that hold the periphery of the substrate W above the spin base 21, and the center of the spin base 21. And the electric motor 23 that applies a rotational force to the rotary shaft 22. The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The rotation shaft 22 passes through the spin base 21 and has an upper end above the spin base 21. The spin base 21 has a disk shape along the horizontal direction. The plurality of holding pins 20 are provided on the peripheral edge of the upper surface of the spin base 21 with an interval in the rotation direction S (see also FIG. 3 described later).
　複数の保持ピン２０を開閉駆動するために、開閉ユニット２５が備えられている。複数の保持ピン２０は、開閉ユニット２５によって閉状態にされることによって基板Ｗを保持（挟持）する。複数の保持ピン２０は、開閉ユニット２５によって開状態にされることによって基板Ｗに対する保持を解除する。 In order to open and close the plurality of holding pins 20, an opening / closing unit 25 is provided. The plurality of holding pins 20 hold (clamp) the substrate W by being closed by the opening / closing unit 25. The plurality of holding pins 20 are released from being held by the substrate W by being opened by the opening / closing unit 25.
　開閉ユニット２５は、たとえば、リンク機構（図示せず）と、駆動源（図示せず）とを含む。当該駆動源は、たとえば、ボールねじ機構と、それに駆動力を与える電動モータとを含む。開閉ユニット２５は、磁力によって、複数の保持ピン２０を開閉させるように構成されていてもよい。この場合、開閉ユニット２５は、たとえば、保持ピン２０に取り付けられた第１磁石（図示せず）と、第１磁石に近接することによって第１磁石に反発力または吸引力を付与する第２磁石（図示せず）とを含む。第２磁石が第１磁石に付与する反発力または吸引力によって保持ピン２０の開閉が切り替えられる。 The opening / closing unit 25 includes, for example, a link mechanism (not shown) and a drive source (not shown). The driving source includes, for example, a ball screw mechanism and an electric motor that gives a driving force thereto. The opening / closing unit 25 may be configured to open and close the plurality of holding pins 20 by magnetic force. In this case, the opening / closing unit 25 includes, for example, a first magnet (not shown) attached to the holding pin 20 and a second magnet that applies a repulsive force or an attractive force to the first magnet by approaching the first magnet. (Not shown). The opening and closing of the holding pin 20 is switched by the repulsive force or attractive force that the second magnet applies to the first magnet.
　電動モータ２３によって回転軸２２が回転されることにより、スピンベース２１が回転される。これにより、基板Ｗが回転軸線Ａ１のまわりの回転方向Ｓに回転される。スピンチャック５は、基板Ｗを保持し鉛直方向に沿う回転軸線Ａ１まわりに基板Ｗを回転させる基板保持回転ユニットに含まれる。 When the rotating shaft 22 is rotated by the electric motor 23, the spin base 21 is rotated. Thus, the substrate W is rotated in the rotation direction S around the rotation axis A1. The spin chuck 5 is included in a substrate holding and rotating unit that holds the substrate W and rotates the substrate W about the rotation axis A1 along the vertical direction.
　処理液供給ユニット８は、基板Ｗの上面にＤＩＷなどの処理液を供給する処理液ノズル４０と、処理液ノズル４０に結合された処理液供給管４１と、処理液供給管４１に介装された処理液バルブ４２とを含む。処理液供給管４１には、処理液供給源から、処理液が供給されている。 The processing liquid supply unit 8 is interposed in the processing liquid nozzle 40 for supplying a processing liquid such as DIW to the upper surface of the substrate W, a processing liquid supply pipe 41 coupled to the processing liquid nozzle 40, and the processing liquid supply pipe 41. Treatment liquid valve 42. A processing liquid is supplied to the processing liquid supply pipe 41 from a processing liquid supply source.
　処理液ノズル４０は、固定ノズルである。本実施形態とは異なり、処理液ノズル４０は、水平方向および鉛直方向に移動可能な移動ノズルであってもよい。 The treatment liquid nozzle 40 is a fixed nozzle. Unlike the present embodiment, the treatment liquid nozzle 40 may be a moving nozzle that is movable in the horizontal direction and the vertical direction.
　処理液ノズル４０から供給される処理液は、ＤＩＷに限られず、炭酸水、電解イオン水、オゾン水、希釈濃度（たとえば、１０ｐｐｍ～１００ｐｐｍ程度）の塩酸水、還元水（水素水）であってもよい。 The treatment liquid supplied from the treatment liquid nozzle 40 is not limited to DIW, but includes carbonated water, electrolytic ion water, ozone water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water). Also good.
　洗浄ユニット９は、基板Ｗの上面を洗浄するためのブラシ３１と、ブラシ３１を支持するブラシアーム３５と、ブラシアーム３５を回動させる回動軸３６と、回動軸３６を駆動することによって、ブラシアーム３５を水平方向および鉛直方向に移動させるアーム移動機構３７とを含む。 The cleaning unit 9 drives the brush 31 for cleaning the upper surface of the substrate W, the brush arm 35 that supports the brush 31, the rotation shaft 36 that rotates the brush arm 35, and the rotation shaft 36. And an arm moving mechanism 37 for moving the brush arm 35 in the horizontal direction and the vertical direction.
　ブラシ３１は、ブラシ３１の上方に配置されたブラシホルダ３２に保持されている。ブラシホルダ３２は、ブラシアーム３５から下方に突出している。 The brush 31 is held by a brush holder 32 disposed above the brush 31. The brush holder 32 protrudes downward from the brush arm 35.
　ブラシ３１は、ＰＶＡ（ポリビニルアルコール）などの合成樹脂で作成された弾性変形可能なスポンジブラシである。ブラシ３１は、ブラシホルダ３２から下方に突出している。ブラシ３１は、スポンジブラシに限らず、樹脂製の複数の繊維によって形成された毛束を備えるブラシであってもよい。 The brush 31 is an elastically deformable sponge brush made of a synthetic resin such as PVA (polyvinyl alcohol). The brush 31 protrudes downward from the brush holder 32. The brush 31 is not limited to a sponge brush, and may be a brush including a hair bundle formed by a plurality of resin fibers.
　アーム移動機構３７は、回動軸３６を回動軸線Ａ２まわりに回動させることによってブラシアーム３５を水平に移動させるブラシ水平駆動機構（図示せず）と、回動軸３６を鉛直に移動させることによってブラシアーム３５を鉛直に移動させるブラシ鉛直駆動機構（図示せず）とを含む。ブラシ水平駆動機構は、たとえば、回動軸３６を回動させる電動モータを含む。ブラシ鉛直駆動機構は、たとえば、ボールねじ機構と、当該ボールねじ機構を駆動する電動モータとを含む。 The arm movement mechanism 37 moves the brush arm 35 horizontally by rotating the rotation shaft 36 around the rotation axis A2, and moves the rotation shaft 36 vertically. And a brush vertical drive mechanism (not shown) for moving the brush arm 35 vertically. The brush horizontal drive mechanism includes, for example, an electric motor that rotates the rotation shaft 36. The brush vertical drive mechanism includes, for example, a ball screw mechanism and an electric motor that drives the ball screw mechanism.
　気体供給ユニット１１は、基板Ｗの下面と保護ディスク１０との間の空間Ａに窒素ガスなどの気体を供給する気体ノズル５０と、気体ノズル５０に結合された気体供給管５１と、気体供給管５１に介装され、気体の流路を開閉する気体バルブ５２とを含む。気体供給管５１には、気体供給源から、窒素ガスなどの気体が供給されている。 The gas supply unit 11 includes a gas nozzle 50 that supplies a gas such as nitrogen gas to a space A between the lower surface of the substrate W and the protective disk 10, a gas supply pipe 51 that is coupled to the gas nozzle 50, and a gas supply pipe 51, and a gas valve 52 that opens and closes a gas flow path. A gas such as nitrogen gas is supplied to the gas supply pipe 51 from a gas supply source.
　気体供給源から気体供給管５１に供給される気体としては、窒素ガスなどの不活性ガスが好ましい。不活性ガスは、窒素ガスに限らず、基板Ｗの下面、および、下面に形成されたデバイスに対して不活性なガスである。不活性ガスの例としては、窒素ガス以外に、ヘリウムやアルゴンなどの希ガス類、ホーミングガス（窒素ガスと水素ガスとの混合ガス）が挙げられる。また、気体供給源から気体供給管５１に供給される気体として空気を利用することも可能である。 The gas supplied from the gas supply source to the gas supply pipe 51 is preferably an inert gas such as nitrogen gas. The inert gas is not limited to nitrogen gas, but is inert to the lower surface of the substrate W and devices formed on the lower surface. Examples of the inert gas include, in addition to nitrogen gas, rare gases such as helium and argon, and homing gas (a mixed gas of nitrogen gas and hydrogen gas). Moreover, it is also possible to use air as the gas supplied from the gas supply source to the gas supply pipe 51.
　気体ノズル５０は、回転軸２２に挿通されている。気体ノズル５０の上端は、回転軸２２の上端から露出されている。気体ノズル５０の上端よりも上方には、気体ノズル５０から吐出される気体を整流する整流部材５４が設けられていてもよい。 The gas nozzle 50 is inserted through the rotary shaft 22. The upper end of the gas nozzle 50 is exposed from the upper end of the rotating shaft 22. A rectifying member 54 that rectifies the gas discharged from the gas nozzle 50 may be provided above the upper end of the gas nozzle 50.
　保護ディスク１０は、略円環状である。保護ディスク１０には、回転軸２２が挿通している。保護ディスク１０は、保持ピン２０によって保持された基板Ｗとスピンベース２１との間に配置されている。保護ディスク１０は、上下動可能である。 The protective disk 10 has a substantially annular shape. A rotating shaft 22 is inserted through the protective disk 10. The protective disk 10 is disposed between the substrate W held by the holding pins 20 and the spin base 21. The protective disk 10 can move up and down.
　保護ディスク１０には、保護ディスク昇降ユニット６０が結合されている。保護ディスク１０は、保護ディスク昇降ユニット６０によって昇降されることによって、基板Ｗから下方に離間した離間位置と、当該離間位置よりも上方において基板Ｗの下面に近接した近接位置との間で移動可能である。保護ディスク昇降ユニット６０は、対向部材を昇降させる対向部材昇降ユニットの一例である。 A protective disk lifting / lowering unit 60 is coupled to the protective disk 10. The protection disk 10 is moved up and down by the protection disk lifting / lowering unit 60, so that the protection disk 10 can be moved between a separation position spaced downward from the substrate W and a proximity position near the lower surface of the substrate W above the separation position. It is. The protection disk lifting / lowering unit 60 is an example of a facing member lifting / lowering unit that lifts and lowers the facing member.
　保護ディスク昇降ユニット６０は、たとえば、ボールねじ機構（図示せず）と、当該ボールねじ機構に駆動力を与える電動モータ（図示せず）とを含む。また、保護ディスク昇降ユニット６０は、磁力によって保護ディスク１０を昇降させるように構成されていてもよい。この場合、保護ディスク昇降ユニット６０は、たとえば、保護ディスク１０に取り付けられた第１磁石（図示せず）と、第１磁石に反発力を付与することで第１磁石とともに保護ディスク１０を上昇させる第２磁石（図示せず）とによって構成される。 The protective disk lifting / lowering unit 60 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that applies a driving force to the ball screw mechanism. Further, the protective disk lifting / lowering unit 60 may be configured to lift and lower the protective disk 10 by magnetic force. In this case, the protection disk lifting / lowering unit 60 raises the protection disk 10 together with the first magnet by applying a repulsive force to the first magnet (not shown) attached to the protection disk 10 and the first magnet, for example. And a second magnet (not shown).
　保護ディスク１０の下面には、回転軸線Ａ１と平行に鉛直方向に延びたガイド軸６１が結合されている。ガイド軸６１は、基板Ｗの回転方向Ｓに等間隔を隔てて複数箇所に配置されている。ガイド軸６１は、スピンベース２１の対応箇所に設けられたリニア軸受６２と結合されている。ガイド軸６１は、このリニア軸受６２によって案内されながら、鉛直方向、すなわち回転軸線Ａ１に平行な方向へ移動可能である。また、保護ディスク１０の下面に結合されたガイド軸６１がリニア軸受６２と結合されているため、保護ディスク１０は、回転軸線Ａ１まわりにスピンベース２１と一体回転する。 A guide shaft 61 extending in the vertical direction in parallel with the rotation axis A1 is coupled to the lower surface of the protective disk 10. The guide shafts 61 are arranged at a plurality of positions at equal intervals in the rotation direction S of the substrate W. The guide shaft 61 is coupled to a linear bearing 62 provided at a corresponding portion of the spin base 21. The guide shaft 61 is movable in the vertical direction, that is, in a direction parallel to the rotation axis A <b> 1 while being guided by the linear bearing 62. Further, since the guide shaft 61 coupled to the lower surface of the protective disk 10 is coupled to the linear bearing 62, the protective disk 10 rotates integrally with the spin base 21 around the rotation axis A1.
　ガイド軸６１は、リニア軸受６２を貫通している。ガイド軸６１は、その下端に、外向きに突出したフランジ６３を備えている。フランジ６３がリニア軸受６２の下端に当接することにより、ガイド軸６１の上方への移動、すなわち保護ディスク１０の上方への移動が規制される。すなわち、フランジ６３は、保護ディスク１０の上方への移動を規制する規制部材である。 The guide shaft 61 passes through the linear bearing 62. The guide shaft 61 includes a flange 63 protruding outward at the lower end thereof. When the flange 63 contacts the lower end of the linear bearing 62, the upward movement of the guide shaft 61, that is, the upward movement of the protective disk 10 is restricted. That is, the flange 63 is a restricting member that restricts the upward movement of the protective disk 10.
　図３は、スピンベース２１の模式的な平面図である。図３では、説明の便宜上、基板Ｗを二点鎖線で示している。 FIG. 3 is a schematic plan view of the spin base 21. In FIG. 3, for convenience of explanation, the substrate W is indicated by a two-dot chain line.
　図３を参照して、保護ディスク１０は、平面視で基板Ｗとほぼ同じサイズの円形状であり、基板Ｗの周縁に対向している。保護ディスク１０の周縁部において、保持ピン２０に対応する部分には、保持ピン２０の少なくとも一部が収容される切り欠き１０ａが設けられている。 Referring to FIG. 3, the protective disk 10 has a circular shape having substantially the same size as the substrate W in plan view, and faces the periphery of the substrate W. A cutout 10 a in which at least a part of the holding pin 20 is accommodated is provided at a portion corresponding to the holding pin 20 in the peripheral portion of the protective disk 10.
　処理ユニット２は、基板Ｗの回転径方向の外方から、基板Ｗの下面と保護ディスク１０との間の空間Ａへ気流が進入するのを抑制（規制）する第１進入抑制部材１２および第２進入抑制部材１３をさらに含む。 The processing unit 2 includes a first intrusion suppressing member 12 and a first intrusion suppressing member 12 that suppress (restrict) air current from entering the space A between the lower surface of the substrate W and the protection disk 10 from the outside in the rotation radial direction of the substrate W. 2 further includes an entry suppression member 13.
　なお、基板Ｗの回転径方向とは、回転軸線Ａ１に対する直交方向のことである。基板Ｗの回転径方向の内方は、基板Ｗの回転径方向において回転軸線Ａ１側に向かう方向である。以下では、基板Ｗの回転径方向の内方を、単に、径方向内方という。また、基板Ｗの回転径方向の外方は、基板Ｗの回転径方向において回転軸線Ａ１側とは反対側に向かう方向である。以下では、基板Ｗの回転径方向の外方を、単に、径方向外方という。 It should be noted that the rotational diameter direction of the substrate W is a direction orthogonal to the rotational axis A1. The inner side of the substrate W in the rotation diameter direction is a direction toward the rotation axis A1 side in the rotation diameter direction of the substrate W. Hereinafter, the inner side in the rotational radial direction of the substrate W is simply referred to as the radial inner side. Further, the outward direction of the substrate W in the radial direction is the direction toward the opposite side of the rotational axis A1 side in the radial direction of the substrate W. Hereinafter, the outer side in the rotational radial direction of the substrate W is simply referred to as a radially outer side.
　第１進入抑制部材１２は、基板Ｗの下面の周縁部と保護ディスク１０の周縁部との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流の進入を抑制する。第２進入抑制部材１３は、基板Ｗの下面の周縁部と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流の進入を抑制する。 The first entry suppression member 12 suppresses the inflow of the air current from the space between the peripheral portion of the lower surface of the substrate W and the peripheral portion of the protective disk 10 to the space A between the lower surface of the substrate W and the protective disk 10. The second entry suppression member 13 suppresses the inflow of airflow from between the peripheral edge of the lower surface of the substrate W and the holding pin 20 into the space A between the lower surface of the substrate W and the protective disk 10.
　第１進入抑制部材１２および第２進入抑制部材１３は、それぞれ複数設けられている。詳しくは、第１進入抑制部材１２は、保護ディスク１０において、回転方向Ｓに隣り合う保持ピン２０の間の部分に１つずつ設けられている。各第１進入抑制部材１２は、回転方向Ｓに隣り合う保持ピン２０の間の領域において、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流の進入を抑制する。第２進入抑制部材１３は、各保持ピン２０に１つずつ設けられている。各第２進入抑制部材１３は、対応する保持ピン２０の周囲において、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流の進入を抑制する。 A plurality of first entry suppression members 12 and second entry suppression members 13 are provided. Specifically, the first entry suppressing member 12 is provided one by one in a portion between the holding pins 20 adjacent in the rotation direction S in the protective disk 10. Each first entry suppression member 12 suppresses the entry of airflow into the space A between the lower surface of the substrate W and the protective disk 10 in the region between the holding pins 20 adjacent in the rotation direction S. One second entry suppression member 13 is provided for each holding pin 20. Each second entry suppression member 13 suppresses the entry of airflow into the space A between the lower surface of the substrate W and the protection disk 10 around the corresponding holding pin 20.
　図４Ａは、図３のＩＶＡ－ＩＶＡ線に沿った断面の模式図である。図４Ａでは、近接位置に位置する保護ディスク１０を実線で示している。図４Ａでは、離間位置に位置する保護ディスク１０を二点鎖線で示している。 FIG. 4A is a schematic diagram of a cross section taken along the line IVA-IVA of FIG. In FIG. 4A, the protection disk 10 located at the close position is indicated by a solid line. In FIG. 4A, the protection disk 10 positioned at the separated position is indicated by a two-dot chain line.
　第１進入抑制部材１２は、平面視で湾曲状の樹脂製のシートである（図３参照）。第１進入抑制部材１２を構成する樹脂は、たとえば、合成樹脂である。合成樹脂としては、たとえば、ＰＴＦＥ（ポリテトラフルオロエチレン）、ＰＦＡ（テトラフルオロエチレン・パーフルオロアルキルビニルエーテル共重合体）、ＰＰ（ポリプロピレン）、ＰＥ（ポリエチレン）などが挙げられる。第１進入抑制部材１２は、弾性部材である。第１進入抑制部材１２は、合成ゴムなどの弾性体であってもよい。 The first entry suppression member 12 is a curved resin sheet in plan view (see FIG. 3). The resin constituting the first entry suppressing member 12 is, for example, a synthetic resin. Examples of the synthetic resin include PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), PP (polypropylene), PE (polyethylene), and the like. The first entry suppression member 12 is an elastic member. The first entry suppressing member 12 may be an elastic body such as synthetic rubber.
　第１進入抑制部材１２は、保護ディスク１０に固定された第１固定部８０と、基板Ｗの下面の周縁部に弾性的に接触する第１弾性接触部８１とを一体に含む。第１弾性接触部８１は、基板Ｗの下面においてデバイスが形成されている部分よりも径方向外方に接触している。詳しくは、第１弾性接触部８１は、基板Ｗの下面の周縁部において径方向外方端と、径方向外方端よりも僅かに内方（２ｍｍ程度内方）との間の部分に接触している。 The first entry suppressing member 12 integrally includes a first fixing portion 80 fixed to the protective disk 10 and a first elastic contact portion 81 that elastically contacts the peripheral edge of the lower surface of the substrate W. The first elastic contact portion 81 is in contact with the outer side in the radial direction from the portion where the device is formed on the lower surface of the substrate W. Specifically, the first elastic contact portion 81 contacts a portion between the radially outer end and a slightly inner side (inward of about 2 mm) from the radially outer end at the peripheral edge of the lower surface of the substrate W. is doing.
　第１弾性接触部８１は、径方向外方に向かうにしたがって基板Ｗの下面に近づくように第１固定部８０から延びている。鉛直方向における第１弾性接触部８１と基板Ｗとの間の距離は、回転径方向の外方に向かうにしたがって小さくなる。保護ディスク１０の上面の周縁部において回転方向Ｓに隣り合う保持ピン２０の間の領域には、各第１弾性接触部８１を下方から支持する支持突起８２が形成されている。 The first elastic contact portion 81 extends from the first fixing portion 80 so as to approach the lower surface of the substrate W as it goes outward in the radial direction. The distance between the first elastic contact portion 81 and the substrate W in the vertical direction becomes smaller toward the outside in the rotational radial direction. Support protrusions 82 that support the first elastic contact portions 81 from below are formed in the region between the holding pins 20 adjacent to each other in the rotation direction S at the peripheral edge of the upper surface of the protective disk 10.
　第１固定部８０は、たとえば、樹脂製のねじ８３によって保護ディスク１０に固定されている。図４Ｂは、図４Ａの第１固定部８０の周辺の拡大図である。図４Ｂを参照して、ねじ８３は、雄ねじ部が形成されたねじ軸８３ａと、ねじ軸８３ａの軸方向の一端から、当該軸方向に対して直交する方向に張り出した頭部８３ｂとを含む。ねじ軸８３ａは、保護ディスク１０に形成されたねじ孔８４に挿通（螺合）されている。ねじ軸８３ａに形成された雄ねじ部がねじ孔８４の内周面に形成された雌ねじ部と螺合している。第１固定部８０には、ねじ軸８３ａが挿通される挿通孔８５と、挿通孔８５と連通し、頭部８３ｂを収容する収容穴８６とが形成されている。収容穴８６の底部が頭部８３ｂと保護ディスク１０とに挟持されることによって、第１固定部８０が保護ディスク１０に固定される。 The first fixing portion 80 is fixed to the protective disk 10 by a resin screw 83, for example. FIG. 4B is an enlarged view of the periphery of the first fixing unit 80 in FIG. 4A. Referring to FIG. 4B, screw 83 includes a screw shaft 83a in which a male screw portion is formed, and a head portion 83b protruding from one end in the axial direction of screw shaft 83a in a direction orthogonal to the axial direction. . The screw shaft 83 a is inserted (screwed) into a screw hole 84 formed in the protective disk 10. The male screw portion formed on the screw shaft 83 a is screwed with the female screw portion formed on the inner peripheral surface of the screw hole 84. The first fixing portion 80 is formed with an insertion hole 85 through which the screw shaft 83a is inserted, and an accommodation hole 86 that communicates with the insertion hole 85 and accommodates the head portion 83b. The first fixing portion 80 is fixed to the protective disk 10 by sandwiching the bottom of the accommodation hole 86 between the head 83 b and the protective disk 10.
　第１固定部８０は、ねじ８３によって保護ディスク１０に固定された状態で保護ディスク１０に密着している。そのため、保護ディスク１０の位置にかかわらず、第１進入抑制部材１２と保護ディスク１０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入が抑制されている。 The first fixing portion 80 is in close contact with the protective disk 10 while being fixed to the protective disk 10 with screws 83. Therefore, regardless of the position of the protection disk 10, the entry of the airflow F from the space between the first entry suppression member 12 and the protection disk 10 into the space A between the lower surface of the substrate W and the protection disk 10 is suppressed. .
　第１弾性接触部８１は、保護ディスク１０が離間位置にある状態では、基板Ｗの下面から離間している（図４Ａの二点鎖線参照）。第１弾性接触部８１は、保護ディスク１０が近接位置に位置する状態で、基板Ｗの下面に密着する（図４Ａの実線参照）。そのため、保護ディスク１０が近接位置に位置する状態で、第１進入抑制部材１２と基板Ｗの下面との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入が抑制されている。 The first elastic contact portion 81 is separated from the lower surface of the substrate W when the protective disk 10 is in the separated position (see the two-dot chain line in FIG. 4A). The first elastic contact portion 81 is in close contact with the lower surface of the substrate W in a state where the protective disk 10 is located at the close position (see a solid line in FIG. 4A). Therefore, in the state where the protective disk 10 is located at the close position, the air flow F enters the space A between the lower surface of the substrate W and the protective disk 10 from between the first entry suppression member 12 and the lower surface of the substrate W. It is suppressed.
　このように、第１進入抑制部材１２は、保護ディスク１０が近接位置に位置する状態で、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制する。 Thus, the first entry suppression member 12 suppresses the entry of the airflow F into the space A between the lower surface of the substrate W and the protection disk 10 in a state where the protection disk 10 is located in the proximity position.
　図５は、図３のＶ－Ｖ線に沿った断面の模式図である。 FIG. 5 is a schematic diagram of a cross section taken along line VV in FIG.
　第２進入抑制部材１３は、樹脂製のシートである。第２進入抑制部材１３を構成する樹脂は、たとえば、合成樹脂である。合成樹脂としては、たとえば、ＰＴＦＥ、ＰＦＡ、ＰＰ、ＰＥなどが挙げられる。第２進入抑制部材１３は、弾性部材である。第２進入抑制部材１３は、ゴムなどの弾性体であってもよい。 The second entry suppressing member 13 is a resin sheet. The resin constituting the second entry suppressing member 13 is, for example, a synthetic resin. Examples of the synthetic resin include PTFE, PFA, PP, PE, and the like. The second entry suppression member 13 is an elastic member. The second entry suppressing member 13 may be an elastic body such as rubber.
　保持ピン２０は、基板Ｗに水平方向から挟持する挟持部２０ａと、略水平方向に延び、基板Ｗの下面に間隔を隔てて対向する対向部２０ｂとを含む。 The holding pin 20 includes a sandwiching portion 20a that sandwiches the substrate W from the horizontal direction, and a facing portion 20b that extends substantially in the horizontal direction and faces the lower surface of the substrate W with a space therebetween.
　第２進入抑制部材１３は、保持ピン２０の対向部２０ｂに固定された第２固定部９０と、基板Ｗの下面の周縁部に弾性的に接触する第２弾性接触部９１と、保護ディスク１０が近接位置にある状態で、保護ディスク１０の周縁部に上方から接触する保護ディスク接触部９２とを一体に含む。第２弾性接触部９１は、径方向外方に向かうにしたがって基板Ｗの下面に近づくように第２固定部９０から延びている。鉛直方向における第２弾性接触部９１と基板Ｗとの間の距離は、径方向外方に向かうにしたがって小さくなる。第２固定部９０は、たとえば、樹脂製のねじ９３によって保持ピン２０の対向部２０ｂに固定されることによって保持ピン２０に固定されている。保持ピン２０の対向部２０ｂは、第２進入抑制部材１３を介して、下方から基板Ｗを支持している。 The second entry suppressing member 13 includes a second fixing portion 90 fixed to the facing portion 20 b of the holding pin 20, a second elastic contact portion 91 that elastically contacts the peripheral portion of the lower surface of the substrate W, and the protective disk 10. , And a protection disk contact portion 92 that comes into contact with the peripheral edge of the protection disk 10 from above. The second elastic contact portion 91 extends from the second fixing portion 90 so as to approach the lower surface of the substrate W as it goes outward in the radial direction. The distance between the second elastic contact portion 91 and the substrate W in the vertical direction becomes smaller toward the outer side in the radial direction. The second fixing portion 90 is fixed to the holding pin 20 by being fixed to the facing portion 20b of the holding pin 20 with a resin screw 93, for example. The facing portion 20 b of the holding pin 20 supports the substrate W from below via the second entry suppressing member 13.
　第２固定部９０は、ねじ９３によって対応する保持ピン２０に固定された状態で当該保持ピン２０に密着している。そのため、第２進入抑制部材１３と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入が抑制されている。 The second fixing portion 90 is in close contact with the holding pin 20 in a state where the second fixing portion 90 is fixed to the corresponding holding pin 20 with a screw 93. Therefore, the entry of the airflow F from the space between the second entry suppressing member 13 and the holding pin 20 to the space A between the lower surface of the substrate W and the protective disk 10 is suppressed.
　第２弾性接触部９１は、基板Ｗが複数の保持ピン２０に保持された状態で、基板Ｗの下面に密着している。そのため、第２進入抑制部材１３と基板Ｗの下面との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入が抑制されている。 The second elastic contact portion 91 is in close contact with the lower surface of the substrate W in a state where the substrate W is held by the plurality of holding pins 20. Therefore, the entry of the airflow F from the space between the second entry suppressing member 13 and the lower surface of the substrate W into the space A between the lower surface of the substrate W and the protective disk 10 is suppressed.
　保護ディスク接触部９２は、第２弾性接触部９１とは反対側（径方向内方）に第２固定部９０から延びている。保護ディスク接触部９２は、保護ディスク１０が近接位置にある状態で、先端（径方向内方端）が上方に移動するように保護ディスク１０によって押し上げられて弾性変形していてもよい。保護ディスク接触部９２は、平面視で、保護ディスク１０の上面において切り欠き１０ａの周りの部分１０ｂと重なっている。 The protective disk contact portion 92 extends from the second fixing portion 90 on the side opposite to the second elastic contact portion 91 (inward in the radial direction). The protection disk contact portion 92 may be elastically deformed by being pushed up by the protection disk 10 so that the tip (radially inner end) moves upward in a state where the protection disk 10 is in the proximity position. The protection disk contact portion 92 overlaps the portion 10b around the notch 10a on the upper surface of the protection disk 10 in plan view.
　図６は、基板処理装置１の主要部の電気的構成を説明するためのブロック図である。コントローラ３は、マイクロコンピュータを備えており、所定のプログラムに従って、基板処理装置１に備えられた制御対象を制御する。より具体的には、コントローラ３は、プロセッサ（ＣＰＵ）３Ａと、プログラムが格納されたメモリ３Ｂとを含み、プロセッサ３Ａがプログラムを実行することによって、基板処理のための様々な制御を実行するように構成されている。とくに、コントローラ３は、搬送ロボットＩＲ，ＣＲ、アーム移動機構３７、電動モータ２３、保護ディスク昇降ユニット６０、開閉ユニット２５およびバルブ類４２，５２などの動作を制御する。 FIG. 6 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls a control target provided in the substrate processing apparatus 1 according to a predetermined program. More specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which a program is stored, and the processor 3A executes various programs to execute various controls for substrate processing. It is configured. In particular, the controller 3 controls operations of the transfer robots IR and CR, the arm moving mechanism 37, the electric motor 23, the protective disk lifting / lowering unit 60, the opening / closing unit 25, the valves 42 and 52, and the like.
　図７は、基板処理装置１による基板処理の一例を説明するための流れ図であり、主として、コントローラ３がプログラムを実行することによって実現される処理が示されている。 FIG. 7 is a flowchart for explaining an example of the substrate processing by the substrate processing apparatus 1, and mainly shows processing realized by the controller 3 executing a program.
　基板処理では、まず、未処理の基板Ｗが、搬送ロボットＩＲ，ＣＲによってキャリヤＣから処理ユニット２に搬入され、スピンチャック５に渡される（ステップＳ１）。この後、基板Ｗは、搬送ロボットＣＲによって搬出されるまでの間、スピンベース２１の上面から上方に間隔を空けて水平に保持される。開閉ユニット２５が、複数の保持ピン２０に基板Ｗの周縁を保持させる（基板保持工程、ステップＳ２）。このとき、基板Ｗは、デバイスが形成されたデバイス面を下方に向けた状態で、複数の保持ピン２０に保持される。 In the substrate processing, first, an unprocessed substrate W is carried into the processing unit 2 from the carrier C by the transfer robots IR and CR, and delivered to the spin chuck 5 (step S1). Thereafter, the substrate W is held horizontally with an interval upward from the upper surface of the spin base 21 until it is unloaded by the transfer robot CR. The opening / closing unit 25 holds the periphery of the substrate W on the plurality of holding pins 20 (substrate holding step, step S2). At this time, the substrate W is held by the plurality of holding pins 20 with the device surface on which the device is formed facing downward.
　次に、保護ディスク昇降ユニット６０が、保護ディスク１０を近接位置まで上昇させる（近接工程、ステップＳ３）。これにより、第１進入抑制部材１２の第１弾性接触部８１が基板Ｗの下面に接触する。次に、気体バルブ５２が開かれる。これにより、保護ディスク１０の上面と基板Ｗの下面との間の空間Ａへの窒素ガスなどの気体の供給が開始される（ステップＳ４）。このときの気体の供給流量は、たとえば、１００Ｌ／ｍｉｎ～２００Ｌ／ｍｉｎである。複数の保持ピン２０が基板Ｗの周縁部を保持し、かつ、第１進入抑制部材１２が前記基板の下面に接触した状態で、電動モータ２３が、スピンベース２１を回転させる。これにより、保持ピン２０に水平に保持された基板Ｗが回転する（基板回転工程、ステップＳ５）。このときの基板Ｗの回転速度は、たとえば、５００ｒｐｍである。基板Ｗの回転速度は、５００ｒｐｍに限られず、１００ｒｐｍ～１０００ｒｐｍの任意の回転速度であってもよい。である。そして、保護ディスク１０の上面と基板Ｗの下面との間の空間Ａへの気体の供給を継続した状態で、処理液バルブ４２が開かれる。これにより、回転状態の基板Ｗの上面へのＤＩＷなどの処理液の供給が開始される（処理液供給工程、ステップＳ６）。 Next, the protection disk lifting / lowering unit 60 raises the protection disk 10 to the proximity position (proximity process, step S3). Thereby, the first elastic contact portion 81 of the first entry suppressing member 12 contacts the lower surface of the substrate W. Next, the gas valve 52 is opened. Thereby, supply of gas, such as nitrogen gas, to the space A between the upper surface of the protective disk 10 and the lower surface of the substrate W is started (step S4). The gas supply flow rate at this time is, for example, 100 L / min to 200 L / min. The electric motor 23 rotates the spin base 21 in a state where the plurality of holding pins 20 hold the peripheral edge of the substrate W and the first entry suppressing member 12 is in contact with the lower surface of the substrate. As a result, the substrate W held horizontally by the holding pins 20 rotates (substrate rotation step, step S5). The rotation speed of the substrate W at this time is, for example, 500 rpm. The rotation speed of the substrate W is not limited to 500 rpm, and may be any rotation speed between 100 rpm and 1000 rpm. It is. Then, the processing liquid valve 42 is opened while the supply of gas to the space A between the upper surface of the protective disk 10 and the lower surface of the substrate W is continued. Thereby, the supply of the processing liquid such as DIW to the upper surface of the rotating substrate W is started (processing liquid supply step, step S6).
　そして、スクラブ洗浄が実行される（ステップＳ７）。具体的には、アーム移動機構３７が、ブラシアーム３５を移動させて、基板Ｗの上面にブラシ３１を押し付ける。基板Ｗは、回転されているので、ブラシ３１は、基板Ｗの上面に擦り付けられる。 Then, scrub cleaning is executed (step S7). Specifically, the arm moving mechanism 37 moves the brush arm 35 and presses the brush 31 against the upper surface of the substrate W. Since the substrate W is rotated, the brush 31 is rubbed against the upper surface of the substrate W.
　アーム移動機構３７は、ブラシ３１をスピンチャック５の上方からその側方へと退避させる。そして、処理液バルブ４２を閉じて、処理液ノズル４０からの処理液の供給を停止させる（ステップＳ８）。さらに、電動モータ２３は、スピンベース２１の回転を加速させる（ステップＳ９）。これにより、基板Ｗの上面および周端面の液滴を遠心力によって振り切ることにより基板Ｗを乾燥させるスピンドライ処理が実行される。このスピンドライ処理のときの基板Ｗの回転速度は、たとえば１５００ｒｐｍ～３０００ｒｐｍである。このようにして、基板Ｗから処理液が除去され、基板Ｗが乾燥する。そして、基板Ｗの高速回転が開始されてから所定時間が経過すると、電動モータ２３が、スピンベース２１による基板Ｗの回転を停止させる（ステップＳ１０）。 The arm moving mechanism 37 retracts the brush 31 from above the spin chuck 5 to the side thereof. Then, the processing liquid valve 42 is closed, and the supply of the processing liquid from the processing liquid nozzle 40 is stopped (step S8). Furthermore, the electric motor 23 accelerates the rotation of the spin base 21 (step S9). Thereby, a spin dry process for drying the substrate W is performed by shaking off the droplets on the upper surface and the peripheral end surface of the substrate W by centrifugal force. The rotation speed of the substrate W during this spin dry process is, for example, 1500 rpm to 3000 rpm. In this way, the processing liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W is started, the electric motor 23 stops the rotation of the substrate W by the spin base 21 (step S10).
　そして、気体バルブ５２が閉じられ、基板Ｗの下面と保護ディスク１０の上面との間の空間Ａへの不活性ガスの供給が停止される(ステップＳ１１)。そして、保護ディスク昇降ユニット６０が保護ディスク１０を離間位置まで下降させる（ステップＳ１２）。そして、開閉ユニット２５が複数の保持ピン２０を開状態にすることによって、複数の保持ピン２０による保持から基板Ｗが解放される（ステップＳ１３）。 Then, the gas valve 52 is closed, and the supply of the inert gas to the space A between the lower surface of the substrate W and the upper surface of the protective disk 10 is stopped (step S11). Then, the protection disk lifting / lowering unit 60 lowers the protection disk 10 to the separation position (step S12). Then, when the opening / closing unit 25 opens the plurality of holding pins 20, the substrate W is released from the holding by the plurality of holding pins 20 (step S13).
　そして、搬送ロボットＣＲが、処理ユニット２に進入して、スピンチャック５から処理済みの基板Ｗをすくい取って、処理ユニット２外へと搬出する（ステップＳ１４）。その基板Ｗは、搬送ロボットＣＲから搬送ロボットＩＲへと渡され、搬送ロボットＩＲによって、キャリヤＣに収納される。 Then, the transfer robot CR enters the processing unit 2, scoops up the processed substrate W from the spin chuck 5, and carries it out of the processing unit 2 (step S14). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.
　本実施形態によれば、スピンベース２１は、複数の保持ピン２０に基板Ｗの周縁部を保持させた状態で回転軸線Ａ１まわりに回転可能である。ここで、回転する構造物の周囲には、気流が発生する。たとえば、基板Ｗの径方向外方から基板Ｗの下面と保護ディスク１０との間に流れ込む気流Ｆが発生しやすい（図４Ａ参照）。保護ディスク１０を近接位置に位置させた状態では、基板Ｗの下面の周縁部と保護ディスク１０との間の空間Ａへの気流Ｆの進入が第１進入抑制部材１２によって抑制されている。詳しくは、保護ディスク１０を近接位置に位置させることによって、第１進入抑制部材１２が基板Ｗの下面に弾性的に接触し、第１進入抑制部材１２と基板Ｗの下面とが密着する。一方、第１進入抑制部材１２の第１固定部８０がねじ８３によって保護ディスク１０に固定されているため、保護ディスク１０の位置にかかわらず、第１進入抑制部材１２と保護ディスク１０とは密着している。そのため、基板Ｗの下面と保護ディスク１０との間が塞がれる。したがって、回転状態の基板Ｗを処理液で処理する場合であっても、液体（基板処理によって発生した処理液のミストなど）が気流Ｆに乗って基板Ｗの下面と保護ディスク１０との間の空間Ａへ進入することも抑制することができる。よって、基板Ｗの下面を良好に保護することができる。 According to the present embodiment, the spin base 21 can rotate around the rotation axis A <b> 1 with the plurality of holding pins 20 holding the peripheral edge of the substrate W. Here, an air flow is generated around the rotating structure. For example, an airflow F that flows between the lower surface of the substrate W and the protective disk 10 from the outside in the radial direction of the substrate W is likely to be generated (see FIG. 4A). In a state in which the protective disk 10 is positioned at the close position, the first intrusion suppressing member 12 suppresses the entry of the airflow F into the space A between the peripheral edge of the lower surface of the substrate W and the protective disk 10. Specifically, by placing the protective disk 10 in the proximity position, the first entry suppression member 12 elastically contacts the lower surface of the substrate W, and the first entry suppression member 12 and the lower surface of the substrate W are in close contact with each other. On the other hand, since the first fixing portion 80 of the first entry suppression member 12 is fixed to the protection disk 10 by the screw 83, the first entry suppression member 12 and the protection disk 10 are in close contact regardless of the position of the protection disk 10. is doing. Therefore, the space between the lower surface of the substrate W and the protective disk 10 is closed. Therefore, even when the rotated substrate W is processed with the processing liquid, the liquid (such as a mist of the processing liquid generated by the substrate processing) rides on the air flow F and is between the lower surface of the substrate W and the protective disk 10. The entry into the space A can also be suppressed. Therefore, the lower surface of the substrate W can be well protected.
　また、本実施形態によれば、気体供給ユニット１１によって、保護ディスク１０と基板Ｗとの間の空間Ａに気体が供給される。保護ディスク１０と基板Ｗとの間の空間Ａに気体が供給されることによって、基板Ｗと保護ディスク１０との間の空間Ａから当該空間Ａの外部へ向かう気流（図４Ａ参照）を発生させることができる。そのため、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制することができる。 Further, according to the present embodiment, the gas is supplied to the space A between the protective disk 10 and the substrate W by the gas supply unit 11. By supplying the gas to the space A between the protective disk 10 and the substrate W, an air flow (see FIG. 4A) from the space A between the substrate W and the protective disk 10 toward the outside of the space A is generated. be able to. Therefore, the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10 can be suppressed.
　なお、基板Ｗの下面と保護ディスク１０との間に発生する径方向外方に向かう気流（図４Ａ参照）は、気体供給ユニット１１による気体の供給による押出力だけでなく、基板Ｗの回転の際の遠心力にも起因する。 Note that the radially outward airflow (see FIG. 4A) generated between the lower surface of the substrate W and the protective disk 10 is not only the pushing force by the gas supply by the gas supply unit 11 but also the rotation of the substrate W. Also due to centrifugal force.
　また、本実施形態によれば、第１弾性接触部８１は、第１固定部８０から径方向外方に向かうにしたがって基板Ｗの下面に近づくように第１固定部８０から延びる。そのため、基板Ｗの下面と保護ディスク１０との間に発生した径方向外方に向かう気流が、第１弾性接触部８１と基板Ｗの下面との間に入り込みやすい。そして、この気流は、第１弾性接触部８１と基板Ｗの下面との間を通過するのに必要な幅を有する隙間が第１弾性接触部８１と基板Ｗの下面との間に形成されるように第１弾性接触部８１を弾性変形させる。そして、この気流は、その隙間を通って基板Ｗの下面と保護ディスク１０との間の空間Ａから外部に排出される。そのため、基板Ｗの下面と保護ディスク１０との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制することができる。 Also, according to the present embodiment, the first elastic contact portion 81 extends from the first fixing portion 80 so as to approach the lower surface of the substrate W as it goes radially outward from the first fixing portion 80. Therefore, the radially outward airflow generated between the lower surface of the substrate W and the protective disk 10 tends to enter between the first elastic contact portion 81 and the lower surface of the substrate W. Then, a gap having a width necessary for the air flow to pass between the first elastic contact portion 81 and the lower surface of the substrate W is formed between the first elastic contact portion 81 and the lower surface of the substrate W. Thus, the first elastic contact portion 81 is elastically deformed. Then, the airflow is discharged outside from the space A between the lower surface of the substrate W and the protection disk 10 through the gap. Therefore, it is possible to prevent the pressure between the lower surface of the substrate W and the protective disk 10 from becoming excessively large, and to prevent the air flow F from entering the space A between the lower surface of the substrate W and the protective disk 10. Can be suppressed.
　また、径方向外方へ向かう気流が第１弾性接触部８１と基板Ｗの下面との間を通過するため、基板Ｗの下面を伝って基板Ｗの下面と保護ディスク１０との間の空間Ａに液体が進入することを抑制することができる。 In addition, since the air flow directed outward in the radial direction passes between the first elastic contact portion 81 and the lower surface of the substrate W, the space A between the lower surface of the substrate W and the protective disk 10 travels along the lower surface of the substrate W. It is possible to suppress the liquid from entering.
　また、本実施形態によれば、第２進入抑制部材１３は、基板Ｗの下面の周縁部と保持ピン２０の間から基板Ｗの下面の周縁部と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制する。詳しくは、基板Ｗが複数の保持ピン２０に保持されることによって、第２進入抑制部材１３が基板Ｗの下面に弾性的に接触し、第２進入抑制部材１３と基板Ｗの下面とが密着する。一方、基板Ｗの保持状態にかかわらず、第２進入抑制部材１３と保持ピン２０とは密着している。そのため、基板Ｗの下面と保護ディスク１０との間が塞がれる。そのため、液体（基板処理によって発生した処理液のミストなど）が気流Ｆに乗って基板Ｗの下面の周縁部と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへ進入することを抑制することができる。 In addition, according to the present embodiment, the second entry suppression member 13 extends from the space between the peripheral edge of the lower surface of the substrate W and the holding pin 20 to the space A between the peripheral edge of the lower surface of the substrate W and the protective disk 10. The entry of the airflow F is suppressed. Specifically, when the substrate W is held by the plurality of holding pins 20, the second entry suppression member 13 elastically contacts the lower surface of the substrate W, and the second entry suppression member 13 and the lower surface of the substrate W are in close contact with each other. To do. On the other hand, regardless of the holding state of the substrate W, the second entry suppressing member 13 and the holding pin 20 are in close contact. Therefore, the space between the lower surface of the substrate W and the protective disk 10 is closed. Therefore, a liquid (such as a mist of the processing liquid generated by the substrate processing) rides on the airflow F, and the space A between the lower surface of the substrate W and the holding pin 20 to the lower surface of the substrate W and the protective disk 10. Can be prevented from entering
　また、本実施形態によれば、第２弾性接触部９１は、第２固定部９０から径方向外方に向かうにしたがって基板Ｗの下面に近づくように第２固定部９０から延びる。そのため、基板Ｗの下面と保護ディスク１０との間で径方向外方へ向かう気流は、第２弾性接触部９１と基板Ｗの下面との間に入り込みやすい。そして、この気流は、第２弾性接触部９１と基板Ｗの下面との間を通過するのに必要な幅を有する隙間が第２弾性接触部９１と基板Ｗの下面との間に形成されるように第２弾性接触部９１を弾性変形させる。そして、この気流は、その隙間を通って基板Ｗの下面と保護ディスク１０との間の空間Ａから外部に排出される。そのため、基板Ｗの下面と保護ディスク１０との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板Ｗの下面の周縁部と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制することができる。 Further, according to the present embodiment, the second elastic contact portion 91 extends from the second fixing portion 90 so as to approach the lower surface of the substrate W as it goes radially outward from the second fixing portion 90. Therefore, the airflow directed radially outward between the lower surface of the substrate W and the protective disk 10 tends to enter between the second elastic contact portion 91 and the lower surface of the substrate W. Then, a gap having a width necessary for the air flow to pass between the second elastic contact portion 91 and the lower surface of the substrate W is formed between the second elastic contact portion 91 and the lower surface of the substrate W. Thus, the second elastic contact portion 91 is elastically deformed. Then, the airflow is discharged outside from the space A between the lower surface of the substrate W and the protection disk 10 through the gap. Therefore, it is possible to prevent the pressure between the lower surface of the substrate W and the protective disk 10 from being excessively increased, and to protect the lower surface of the substrate W from between the peripheral portion of the lower surface of the substrate W and the holding pins 20. The entry of the airflow F into the space A with the disk 10 can be suppressed.
　また、径方向外方へ向かう気流が第２弾性接触部９１と基板Ｗの下面との間を通過するため、保持ピン２０の周囲において、基板Ｗの下面を伝って基板Ｗの下面と保護ディスク１０との間の空間Ａに液体が進入することを抑制することができる。 In addition, since the air flow toward the outside in the radial direction passes between the second elastic contact portion 91 and the lower surface of the substrate W, the lower surface of the substrate W and the protective disk are transmitted around the holding pin 20 along the lower surface of the substrate W. The liquid can be prevented from entering the space A between the two.
　また、本実施形態によれば、第１進入抑制部材１２は、回転方向Ｓに隣り合う保持ピン２０の間の領域において、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制する。そして、第２進入抑制部材１３は、保持ピン２０の周囲において、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制する。したがって、回転方向Ｓの比較的広い範囲（ほぼ全周）において、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流の進入を抑制することができる。 In addition, according to the present embodiment, the first entry suppressing member 12 has an air flow F to the space A between the lower surface of the substrate W and the protective disk 10 in the region between the holding pins 20 adjacent in the rotation direction S. Suppresses the entry. The second entry suppressing member 13 suppresses the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10 around the holding pin 20. Therefore, in the relatively wide range (substantially the entire circumference) of the rotation direction S, it is possible to suppress the inflow of airflow into the space A between the lower surface of the substrate W and the protective disk 10.
　また、本実施形態によれば、ねじ８３の頭部８３ｂが収容穴８６に収容されている。そのため、基板Ｗの下面と保護ディスク１０との間で径方向外方に向かう気流を阻害することなく、ねじ８３によって、第１進入抑制部材１２を保護ディスク１０に固定することができる。 Further, according to the present embodiment, the head 83 b of the screw 83 is accommodated in the accommodation hole 86. Therefore, the first entry suppressing member 12 can be fixed to the protective disk 10 by the screw 83 without hindering the airflow directed radially outward between the lower surface of the substrate W and the protective disk 10.
　また、上述の実施形態とは異なり、気体供給ユニット１１から気体を供給しない場合も有り得る。また、上述の実施形態とは異なり、処理ユニット２に気体供給ユニット１１が設けられていない場合も有り得る。これらの場合、基板処理において、気体の供給（ステップＳ３）および気体の供給の停止（ステップＳ１０）が行われない。これらの場合でも、基板Ｗの下面と保護ディスク１０との間の気体は、基板Ｗの回転の際の遠心力に起因して径方向外方に移動する。そのため、第１弾性接触部８１を弾性変形させて、基板Ｗの下面と保護ディスク１０との間の空間Ａから外部に排出される。これにより、基板Ｗの下面と保護ディスク１０との間の圧力が、外部の圧力よりも低くなり、負圧状態となる。そのため、第１弾性接触部８１が基板の下面に一層密着する。したがって、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を一層抑制することができる。 Further, unlike the above-described embodiment, there is a case where no gas is supplied from the gas supply unit 11. Further, unlike the above-described embodiment, there may be a case where the gas supply unit 11 is not provided in the processing unit 2. In these cases, gas supply (step S3) and gas supply stop (step S10) are not performed in the substrate processing. Even in these cases, the gas between the lower surface of the substrate W and the protective disk 10 moves radially outward due to the centrifugal force when the substrate W rotates. Therefore, the first elastic contact portion 81 is elastically deformed and discharged from the space A between the lower surface of the substrate W and the protection disk 10 to the outside. As a result, the pressure between the lower surface of the substrate W and the protective disk 10 becomes lower than the external pressure, resulting in a negative pressure state. Therefore, the first elastic contact portion 81 is further adhered to the lower surface of the substrate. Accordingly, it is possible to further suppress the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10.
　また、本実施形態によれば、第２進入抑制部材１３は、保護ディスク１０が近接位置にある状態で、保護ディスク１０の周縁部に上方から接触する保護ディスク接触部９２を含む。そのため、保護ディスク１０と各保持ピン２０との間から、基板Ｗの下面と保護ディスク１０との間の空間Ａに進入する気流が、基板Ｗの下面と保護ディスク１０との間に流れ込むまでの通り道を塞ぐことができる。したがって、保護ディスク１０と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａに流れ込む気流の発生を抑制することができる。 Further, according to the present embodiment, the second entry suppressing member 13 includes the protective disk contact portion 92 that comes into contact with the peripheral edge portion of the protective disk 10 from above in a state where the protective disk 10 is in the proximity position. Therefore, the airflow that enters the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and each holding pin 20 until it flows between the lower surface of the substrate W and the protective disk 10. Can block the way. Therefore, it is possible to suppress the generation of airflow that flows into the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and the holding pin 20.
　保護ディスク１０が近接位置にある状態で、先端（径方向内方端）が上方に移動するように保護ディスク接触部９２が弾性変形する構成であれば、保護ディスク１０と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａに流れ込む気流の発生を一層抑制することができる。 If the protective disk contact portion 92 is elastically deformed so that the tip (radially inner end) moves upward in a state where the protective disk 10 is in the proximity position, the gap between the protective disk 10 and the holding pin 20 is sufficient. Generation of airflow flowing into the space A between the lower surface of the substrate W and the protective disk 10 can be further suppressed.
　図８は、本実施形態の第１変形例に係る第１進入抑制部材１２Ｐの周辺の模式図である。図８では、今まで説明した部材と同じ部材には同じ参照符号を付して、その説明を省略する。 FIG. 8 is a schematic diagram of the periphery of the first entry suppressing member 12P according to the first modification of the present embodiment. In FIG. 8, the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted.
　図８を参照して、第１変形例に係る第１進入抑制部材１２Ｐは、本実施形態とは異なり、スポンジ状の多孔質材料によって形成されている。多孔質材料としては、フッ素樹脂、ＰＶＡ、ＰＰ、ＰＥなどが挙げられる。第１進入抑制部材１２Ｐは、保護ディスク１０に固定された第１固定部８７と、保護ディスク１０が近接位置に位置する状態で基板Ｗの下面の周縁部および保護ディスク１０の上面の周縁部に接触する第１接触部８８と、第１固定部８７および第１接触部８８を連結する第１連結部８９とを一体に含む。第１固定部８７は、本実施形態の第１進入抑制部材１２の第１固定部８０（図４Ａ参照）と同様にねじ８３によって保護ディスク１０に固定されている。 Referring to FIG. 8, unlike the present embodiment, the first entry suppressing member 12P according to the first modification is formed of a sponge-like porous material. Examples of the porous material include fluororesin, PVA, PP, and PE. The first entry suppressing member 12P is provided on the first fixing portion 87 fixed to the protective disk 10 and the peripheral edge portion of the lower surface of the substrate W and the peripheral edge portion of the upper surface of the protective disk 10 in a state where the protective disk 10 is positioned in the proximity position. The first contact portion 88 that comes into contact with the first fixing portion 87 and the first connection portion 89 that connects the first contact portion 88 are integrally included. The 1st fixing | fixed part 87 is being fixed to the protection disk 10 with the screw | thread 83 similarly to the 1st fixing | fixed part 80 (refer FIG. 4A) of the 1st approach suppression member 12 of this embodiment.
　第１変形例によれば、第１進入抑制部材１２Ｐは、多孔質材料によって形成されている。そのため、第１進入抑制部材１２Ｐは、気体から所定の値以上の圧力を受けることによって、その気体を通過させることができる。 According to the first modification, the first entry suppressing member 12P is formed of a porous material. Therefore, the first entry suppressing member 12P can pass the gas by receiving a pressure of a predetermined value or more from the gas.
　気体供給ユニット１１による気体の供給による押出力や、基板Ｗの回転の際の遠心力によって、基板Ｗの下面と保護ディスク１０との間の空間Ａに径方向外方に向かう気流が生じ、この気流に起因して第１進入抑制部材１２Ｐの周辺において基板Ｗの下面と保護ディスク１０との間の空間Ａの圧力が所定の値以上となることがある。この場合、基板Ｗの下面と保護ディスク１０との間の空間Ａ内の気体は、第１進入抑制部材１２Ｐを通過して外部に排出される。 Due to the pushing force by the gas supply by the gas supply unit 11 and the centrifugal force when the substrate W is rotated, an air flow directed radially outward is generated in the space A between the lower surface of the substrate W and the protective disk 10. Due to the air flow, the pressure in the space A between the lower surface of the substrate W and the protective disk 10 may be a predetermined value or more around the first entry suppressing member 12P. In this case, the gas in the space A between the lower surface of the substrate W and the protective disk 10 passes through the first entry suppressing member 12P and is discharged to the outside.
　その一方で、第１進入抑制部材１２Ｐよりも径方向外方の空間には、空間Ａとは異なり気体供給ユニット１１や遠心力によって積極的に気体が供給されることがない。そのため、第１進入抑制部材１２Ｐよりも径方向外方の空間は、空間Ａにおける第１進入抑制部材１２Ｐの周辺の部分と比較して圧力が上昇しにくい。したがって、第１進入抑制部材１２Ｐは、径方向外方から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制できる。 On the other hand, unlike the space A, the gas is not actively supplied into the space radially outward from the first entry suppression member 12P by the gas supply unit 11 or centrifugal force. Therefore, in the space radially outward from the first entry suppression member 12P, the pressure is less likely to increase compared to the portion around the first entry suppression member 12P in the space A. Therefore, the first entry suppressing member 12P can suppress the entry of the airflow F into the space A between the lower surface of the substrate W and the protective disk 10 from the radially outer side.
　よって、基板Ｗの下面と保護ディスク１０との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制することができる。 Therefore, it is possible to prevent the pressure between the lower surface of the substrate W and the protective disk 10 from becoming excessively large, and to prevent the air flow F from entering the space A between the lower surface of the substrate W and the protective disk 10. Can be suppressed.
　また、第１進入抑制部材１２Ｐは、多孔質材料によって形成されている。そのため、処理液のミストが第１進入抑制部材１２Ｐを通過しくい。したがって、外部から基板Ｗの下面と保護ディスク１０との間の空間Ａへの液体の進入を一層抑制することができる。 Moreover, the first entry suppressing member 12P is formed of a porous material. Therefore, it is difficult for the mist of the processing liquid to pass through the first entry suppressing member 12P. Therefore, it is possible to further suppress the liquid from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
　図９は、本実施形態の第２変形例に係る保持ピン２０の周辺の模式図である。図９では、今まで説明した部材と同じ部材には同じ参照符号を付して、その説明を省略する。 FIG. 9 is a schematic diagram of the periphery of the holding pin 20 according to a second modification of the present embodiment. In FIG. 9, the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted.
　図９を参照して、第２変形例に係る第２進入抑制部材１３Ｐは、本実施形態とは異なり、スポンジ状の多孔質材料によって形成されている。多孔質材料としては、フッ素樹脂、ＰＶＡ、ＰＰ、ＰＥなどが挙げられる。 Referring to FIG. 9, unlike the present embodiment, the second entry suppressing member 13P according to the second modification is formed of a sponge-like porous material. Examples of the porous material include fluororesin, PVA, PP, and PE.
　第２進入抑制部材１３Ｐは、保持ピン２０の対向部２０ｂに固定された第２固定部９７と、基板Ｗの下面の周縁部および対向部２０ｂに接触する第２接触部９８と、第２固定部９７および第２接触部９８を連結する第２連結部９９と、保護ディスク１０が近接位置にある状態で、保護ディスク１０の周縁部に上方から接触する保護ディスク接触部９６とを一体に含む。第２固定部９７は、本実施形態の第２進入抑制部材１３Ｐの第２固定部９０（図５参照）と同様にねじ９３によって対向部２０ｂに固定されている。 The second entry suppressing member 13P includes a second fixing portion 97 fixed to the facing portion 20b of the holding pin 20, a second contact portion 98 that contacts the peripheral portion of the lower surface of the substrate W and the facing portion 20b, and a second fixing. The second connecting part 99 that connects the part 97 and the second contact part 98 and the protective disk contact part 96 that contacts the peripheral edge of the protective disk 10 from above in the state where the protective disk 10 is in the close position are integrally included. . The 2nd fixing | fixed part 97 is being fixed to the opposing part 20b with the screw 93 similarly to the 2nd fixing | fixed part 90 (refer FIG. 5) of the 2nd approach suppression member 13P of this embodiment.
　保護ディスク接触部９６は、第２連結部９９とは反対側に第２固定部９７から延びている。保護ディスク接触部９６は、平面視で、保護ディスク１０の上面において切り欠き１０ａの周りの部分１０ｂと重なっている。 The protective disk contact portion 96 extends from the second fixing portion 97 on the side opposite to the second connecting portion 99. The protective disk contact portion 96 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view.
　第２変形例によれば、第２進入抑制部材１３Ｐは、多孔質材料によって形成されているため、気体を通過させることができる。そのため、第２進入抑制部材１３Ｐは、気体から所定の圧力を受けることによって、その気体を通過させることができる。 According to the second modification, since the second entry suppressing member 13P is formed of a porous material, gas can pass therethrough. Therefore, the second entry suppressing member 13P can pass the gas by receiving a predetermined pressure from the gas.
　気体供給ユニット１１による気体の供給による押出力や、基板Ｗの回転の際の遠心力によって、基板Ｗの下面と保護ディスク１０との間に径方向外方に向かう気流が生じ、この気流に起因して、第２進入抑制部材１３Ｐの周辺において基板Ｗの下面と保護ディスク１０との間の圧力が所定の値以上となることがある。この場合、基板Ｗの下面と保護ディスク１０との間の空間Ａ内の気体は、基板Ｗの下面と保護ディスク１０との間の空間Ａから外部に排出される。 Due to the pushing force by the gas supply by the gas supply unit 11 and the centrifugal force at the time of rotation of the substrate W, a radially outward air flow is generated between the lower surface of the substrate W and the protective disk 10, and this is caused by this air flow. As a result, the pressure between the lower surface of the substrate W and the protective disk 10 around the second entry suppressing member 13P may become a predetermined value or more. In this case, the gas in the space A between the lower surface of the substrate W and the protective disk 10 is discharged to the outside from the space A between the lower surface of the substrate W and the protective disk 10.
　その一方で、第２進入抑制部材１３Ｐよりも径方向外方の空間は、空間Ａとは異なり気体供給ユニット１１や遠心力によって積極的に気体が供給されることがない。そのため、第２進入抑制部材１３Ｐよりも径方向外方の空間は、空間Ａにおける第２進入抑制部材１３Ｐの周辺の部分と比較して圧力が上昇しにくい。したがって、基板Ｗの下面と保護ディスク１０との間の空間Ａに外部から気流Ｆが進入することを抑制できる。 On the other hand, unlike the space A, the gas is not actively supplied to the space radially outward from the second entry suppressing member 13P by the gas supply unit 11 or centrifugal force. Therefore, in the space radially outward from the second entry suppression member 13P, the pressure is less likely to increase as compared to the portion around the second entry suppression member 13P in the space A. Therefore, it is possible to prevent the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
　よって、基板Ｗの下面と保護ディスク１０との間の圧力が過剰に大きくなることを防ぐことができ、かつ、基板Ｗの下面の周縁部と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流Ｆの進入を抑制することができる。 Therefore, it is possible to prevent the pressure between the lower surface of the substrate W and the protective disk 10 from becoming excessively large, and to protect the lower surface of the substrate W from between the peripheral edge portion of the lower surface of the substrate W and the holding pins 20. The entry of the airflow F into the space A with the disk 10 can be suppressed.
　また、第２進入抑制部材１３Ｐは、多孔質材料によって形成されているため、処理液のミストを通過させにくい。したがって、外部から基板Ｗの下面と保護ディスク１０との間の空間Ａへの液体の進入を一層抑制することができる。 Moreover, since the second entry suppressing member 13P is formed of a porous material, it is difficult for the mist of the processing liquid to pass therethrough. Therefore, it is possible to further suppress the liquid from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
　また、第２進入抑制部材１３Ｐは、保護ディスク１０が近接位置にある状態で、保護ディスク１０の周縁部に上方から接触する保護ディスク接触部９６を含む。そのため、保護ディスク１０と各保持ピン２０との間から、基板Ｗの下面と保護ディスク１０との間の空間Ａに進入する気流が、基板Ｗの下面と保護ディスク１０との間に流れ込むまでの通り道を塞ぐことができる。したがって、保護ディスク１０と保持ピン２０との間から基板Ｗの下面と保護ディスク１０との間の空間Ａに流れ込む気流の発生を抑制することができる。 The second entry suppressing member 13P includes a protective disk contact portion 96 that contacts the peripheral edge of the protective disk 10 from above in a state where the protective disk 10 is in the proximity position. Therefore, the airflow that enters the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and each holding pin 20 until it flows between the lower surface of the substrate W and the protective disk 10. Can block the way. Therefore, it is possible to suppress the generation of airflow that flows into the space A between the lower surface of the substrate W and the protective disk 10 from between the protective disk 10 and the holding pin 20.
　図１０は、本実施形態の第３変形例に係る保持ピン２０の周辺の模式図である。図１０では、今まで説明した部材と同じ部材には同じ参照符号を付して、その説明を省略する。 FIG. 10 is a schematic diagram of the periphery of the holding pin 20 according to a third modification of the present embodiment. In FIG. 10, the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted.
　図１０を参照して、第３変形例に係る第２進入抑制部材１３Ｑの第２固定部９０は、本実施形態とは異なり、基板Ｗと保護ディスク１０との間で略水平に延びる延設部材１５に固定されている。延設部材１５は、上方から保護ディスク１０に対向している。 Referring to FIG. 10, unlike the present embodiment, the second fixing portion 90 of the second entry restraining member 13Q according to the third modification extends substantially horizontally between the substrate W and the protective disk 10. It is fixed to the member 15. The extending member 15 faces the protective disk 10 from above.
　延設部材１５は、平面視で略半円弧状である。延設部材１５は、平面視で、保護ディスク１０の上面において切り欠き１０ａの周りの部分１０ｂと重なっている。第３変形例では、保持ピン２０の対向部２０ｂは、水平方向に対して傾斜しており、下方から基板Ｗに当接し基板Ｗを支持している。延設部材１５は、対向部２０ｂの下端に連結され、対向部２０ｂとほぼ同じ角度で水平方向に対して傾斜する傾斜部１５ａを含む。第３変形例の第２固定部９０は、延設部材１５の傾斜部１５ａに固定されている。第３変形例の第２固定部９０は、延設部材１５を介して保持ピン２０に固定されている。 The extending member 15 has a substantially semicircular arc shape in plan view. The extending member 15 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view. In the third modified example, the facing portion 20b of the holding pin 20 is inclined with respect to the horizontal direction, and contacts the substrate W from below and supports the substrate W. The extending member 15 is connected to the lower end of the facing portion 20b, and includes an inclined portion 15a that is inclined with respect to the horizontal direction at substantially the same angle as the facing portion 20b. The second fixing portion 90 of the third modification is fixed to the inclined portion 15 a of the extending member 15. The second fixing portion 90 of the third modification is fixed to the holding pin 20 via the extending member 15.
　第３変形例に係る第２進入抑制部材１３Ｑは、本実施形態と同様に樹脂製のシートである。第２進入抑制部材１３Ｑは、第３変形例とは異なり、第２変形例に係る第２進入抑制部材１３Ｐ（図９参照）と同様にスポンジ状の多孔質材料によって形成されていてもよい。 The second entry suppression member 13Q according to the third modification is a resin sheet as in the present embodiment. Unlike the third modified example, the second entry suppressing member 13Q may be formed of a sponge-like porous material in the same manner as the second entry suppressing member 13P (see FIG. 9) according to the second modified example.
　また、図１０に示すように、保護ディスク１０が近接位置にある状態で、延設部材１５の下面が保護ディスク１０の上面（の周縁部）に接触するように構成されていれば、保護ディスク１０と各保持ピン２０との間から、基板Ｗの下面と保護ディスク１０との間の空間Ａへの気流の進入を抑制することができる。 Further, as shown in FIG. 10, if the lower surface of the extending member 15 is configured to come into contact with the upper surface (peripheral edge portion) of the protective disk 10 in a state where the protective disk 10 is in the proximity position, the protective disk The air current can be prevented from entering the space A between the lower surface of the substrate W and the protective disk 10 from between the holding pins 20 and the holding pins 20.
　この発明は、以上に説明した実施形態に限定されるものではなく、さらに他の形態で実施することができる。 The present invention is not limited to the embodiment described above, and can be implemented in other forms.
　たとえば、上述の実施形態とは異なり、処理液ノズル４０は、処理液の液滴を気体とともに基板Ｗの上面に噴射する二流体ノズルであってもよい。この場合、処理液ノズル４０には、処理液ノズル４０に窒素ガスなどの気体を供給する気体供給管が連結されており、当該気体供給管には、処理液ノズル４０への気体の供給の有無を切り替える気体バルブが介装されている。そして、処理液ノズル４０へは、気体供給管を介して気体供給源から気体が供給される。 For example, unlike the above-described embodiment, the treatment liquid nozzle 40 may be a two-fluid nozzle that ejects droplets of the treatment liquid onto the upper surface of the substrate W together with a gas. In this case, a gas supply pipe that supplies a gas such as nitrogen gas to the processing liquid nozzle 40 is connected to the processing liquid nozzle 40, and whether or not gas is supplied to the processing liquid nozzle 40 in the gas supply pipe A gas valve for switching between is installed. And gas is supplied to the process liquid nozzle 40 from a gas supply source via a gas supply pipe.
　また、上述の実施形態とは異なり、洗浄ユニット９が設けられておらず、代わりに薬液を供給する薬液供給ユニットが設けられていてもよい。薬液供給ユニットは、基板Ｗの上面に薬液を供給する薬液供給ノズルを含んでいる。薬液供給ノズルから供給される薬液としては、ＨＦ（フッ化水素水）、ＳＰＭ（硫酸過酸化水素水混合液）、ＳＣ１（アンモニア過酸化水素水混合液）、ＳＣ２（塩酸過酸化水素水混合液）などが挙げられる。薬液供給ノズルは、二流体ノズルであってもよい。この構成の基板処理装置による基板処理では、薬液供給ユニットから供給される薬液によって基板Ｗの上面が処理された後、処理液供給ユニット８から供給されるＤＩＷなどによって基板Ｗの上面がリンスされる。そして、上述した実施形態における基板処理と同様に、基板Ｗがスピンドライによって乾燥される。 Further, unlike the above-described embodiment, the cleaning unit 9 is not provided, and a chemical solution supply unit that supplies a chemical solution may be provided instead. The chemical solution supply unit includes a chemical solution supply nozzle that supplies the chemical solution to the upper surface of the substrate W. Examples of the chemical solution supplied from the chemical solution supply nozzle include HF (hydrogen fluoride water), SPM (sulfuric acid hydrogen peroxide solution mixture), SC1 (ammonia hydrogen peroxide solution mixture), and SC2 (hydrochloric acid hydrogen peroxide solution mixture). ) And the like. The chemical solution supply nozzle may be a two-fluid nozzle. In the substrate processing by the substrate processing apparatus having this configuration, after the upper surface of the substrate W is processed by the chemical liquid supplied from the chemical liquid supply unit, the upper surface of the substrate W is rinsed by DIW or the like supplied from the processing liquid supply unit 8. . Then, similarly to the substrate processing in the above-described embodiment, the substrate W is dried by spin drying.
　また、第１進入抑制部材１２，１２Ｐおよび第２進入抑制部材１３，１３Ｐ，１３Ｑによって、基板Ｗの下面が回転方向Ｓの全周に亘って気流の進入が規制されている場合、上述の実施形態とは異なり、基板Ｗの下面と保護ディスク１０との間の空間Ａの気体を排除する気体排除ユニットが設けられていてもよい。 Further, when the lower surface of the substrate W is restricted from entering the airflow over the entire circumference in the rotation direction S by the first entry suppression members 12 and 12P and the second entry suppression members 13, 13P and 13Q, the above-described implementation is performed. Unlike a form, the gas exclusion unit which excludes the gas of the space A between the lower surface of the board | substrate W and the protection disk 10 may be provided.
　また、保護ディスク１０は、基板Ｗの周縁部に必ずしも対向している必要はなく、平面視で基板Ｗよりも小さい円形状であってもよい。この場合であっても、第１弾性接触部８１および第２弾性接触部９１は、基板Ｗの下面の周縁部において径方向外方端と、径方向外方端よりも僅かに内方（２ｍｍ程度内方）との間の部分に接触していることが好ましい。 Further, the protective disk 10 does not necessarily have to face the peripheral edge of the substrate W, and may have a circular shape smaller than the substrate W in plan view. Even in this case, the first elastic contact portion 81 and the second elastic contact portion 91 have a radially outer end at the peripheral edge of the lower surface of the substrate W and slightly inward (2 mm) from the radially outer end. It is preferable that it is in contact with the portion between the inner portion and the inner portion.
　本発明の実施形態について詳細に説明してきたが、これらは本発明の技術的内容を明らかにするために用いられた具体例に過ぎず、本発明はこれらの具体例に限定して解釈されるべきではなく、本発明の範囲は添付の請求の範囲によってのみ限定される。 Although the embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical contents of the present invention, and the present invention is construed to be limited to these specific examples. Rather, the scope of the present invention is limited only by the accompanying claims.
　この出願は、２０１７年３月８日に日本国特許庁に提出された特願２０１７－４４０８１号に対応しており、この出願の全開示はここに引用により組み込まれるものとする。 This application corresponds to Japanese Patent Application No. 2017-44081 filed with the Japan Patent Office on March 8, 2017, the entire disclosure of which is incorporated herein by reference.
１　　　：基板処理装置
１０　　：保護ディスク（対向部材）
１２　　：第１進入抑制部材（弾性部材）
１２Ｐ　：第１進入抑制部材（弾性部材）
１３　　：第２進入抑制部材
１３Ｐ　：第２進入抑制部材
１３Ｑ　：第２進入抑制部材
２０　　：保持ピン
２１　　：スピンベース（ベース）
８０　　：第１固定部
８１　　：第１弾性接触部
９０　　：第２固定部
９１　　：第２弾性接触部
Ａ　　　：空間
Ａ１　　：回転軸線
Ｆ　　　：気流
Ｓ　　　：回転方向
Ｗ　　　：基板 1: Substrate processing apparatus 10: Protection disk (opposing member)
12: 1st approach suppression member (elastic member)
12P: 1st approach suppression member (elastic member)
13: 2nd approach control member 13P: 2nd approach control member 13Q: 2nd approach control member 20: Holding pin 21: Spin base (base)
80: 1st fixed part 81: 1st elastic contact part 90: 2nd fixed part 91: 2nd elastic contact part A: Space A1: Rotation axis F: Airflow S: Rotation direction W: Substrate

Claims (9)

  1. 　鉛直方向に沿う回転軸線まわりに回転するベースと、
    　前記ベースの回転方向に互いに間隔を隔てて前記ベースに設けられ、前記ベースよりも上方で前記基板の周縁部を保持する複数の保持ピンと、
    　前記ベースと前記基板との間に配置され、前記基板から下方に離間した離間位置と、前記離間位置よりも前記基板に近接した近接位置との間で昇降可能であり、前記基板に下方から対向する対向部材と、
    　前記対向部材に設けられ、前記対向部材が前記近接位置に位置する状態で、前記基板の下面と前記対向部材との間の空間への気流の進入を抑制する第１進入抑制部材とを含む、基板処理装置。     A base that rotates about a rotation axis along the vertical direction;
    A plurality of holding pins provided on the base and spaced apart from each other in the rotation direction of the base, and holding a peripheral edge of the substrate above the base;
    It is disposed between the base and the substrate, and can be moved up and down between a spaced position spaced downward from the substrate and a close position closer to the substrate than the spaced position, and faces the substrate from below. An opposing member,
    A first entry suppression member that is provided in the opposing member and suppresses the ingress of airflow into the space between the lower surface of the substrate and the opposing member in a state where the opposing member is located at the proximity position; Substrate processing equipment.
  2. 　前記第１進入抑制部材が、前記対向部材に固定された第１固定部と、前記基板の回転径方向の外方に向かうにしたがって前記基板の下面に近づくように前記第１固定部から延び、前記基板の下面の周縁部に弾性的に接触する第１弾性接触部とを含む、請求項１に記載の基板処理装置。 The first entry suppressing member extends from the first fixing portion so as to approach the lower surface of the substrate as it goes outward in the rotational radial direction of the substrate, and the first fixing portion fixed to the opposing member, The substrate processing apparatus according to claim 1, further comprising a first elastic contact portion that elastically contacts a peripheral portion of the lower surface of the substrate.
  3. 　前記第１進入抑制部材が、多孔質材料によって形成されている、請求項１に記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the first entry suppressing member is made of a porous material.
  4. 　前記保持ピンに設けられ、前記基板の下面の周縁部と前記保持ピンとの間から前記基板の下面と前記対向部材との間の空間への気流の進入を抑制する第２進入抑制部材をさらに含む、請求項１～３のいずれか一項に記載の基板処理装置。 A second intrusion suppression member that is provided on the holding pin and that suppresses an inflow of air current from between the peripheral edge of the lower surface of the substrate and the holding pin to a space between the lower surface of the substrate and the opposing member; The substrate processing apparatus according to any one of claims 1 to 3.
  5. 　前記第２進入抑制部材が、前記保持ピンに固定された第２固定部と、前記基板の回転径方向の外方に向かうにしたがって前記基板の下面に近づくように前記第２固定部から延び、前記基板の下面の周縁部に弾性的に接触する第２弾性接触部とを含む、請求項４に記載の基板処理装置。 The second entry suppressing member extends from the second fixing portion so as to approach the lower surface of the substrate as it goes outward in the rotational radial direction of the substrate, and a second fixing portion fixed to the holding pin, The substrate processing apparatus according to claim 4, further comprising a second elastic contact portion that elastically contacts a peripheral portion of the lower surface of the substrate.
  6. 　前記第２進入抑制部材が、多孔質材料によって形成されている、請求項４に記載の基板処理装置。 The substrate processing apparatus according to claim 4, wherein the second entry suppressing member is made of a porous material.
  7. 　前記第１進入抑制部材は、前記回転方向に隣り合う前記保持ピンの間の領域において、前記基板の下面と前記対向部材との間の空間への気流の進入を抑制し、
    　前記第２進入抑制部材は、各前記保持ピンの周囲において、前記基板の下面と前記対向部材との間の空間への気流の進入を抑制する、請求項４～６のいずれか一項に記載の基板処理装置。     The first entry suppression member suppresses the entry of airflow into the space between the lower surface of the substrate and the opposing member in a region between the holding pins adjacent in the rotation direction,
    The second entry suppressing member suppresses the inflow of airflow into the space between the lower surface of the substrate and the opposing member around each holding pin. Substrate processing equipment.
  8. 　前記対向部材と前記基板との間に気体を供給する気体供給ユニットをさらに含む、請求項１～７のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 7, further comprising a gas supply unit that supplies a gas between the facing member and the substrate.
  9. 　鉛直方向に沿う回転軸線まわりの回転方向に互いに間隔を隔ててベースに設けられた複数の保持ピンに、前記ベースよりも上方で基板の周縁部を保持させる基板保持工程と、
    　前記基板に下方から対向する対向部材に固定された弾性部材が前記基板の下面に接触するように、前記対向部材を基板に近接させる近接工程と、
    　前記複数の保持ピンが前記基板の周縁部を保持し、かつ、前記弾性部材が前記基板の下面に接触した状態で、前記ベースを回転させることによって基板を回転させる基板回転工程と、
    　回転状態の基板の上面に、基板を処理する処理液を供給する処理液供給工程とを含む、基板処理方法。     A substrate holding step of holding a peripheral portion of the substrate above the base on a plurality of holding pins provided on the base at intervals in a rotation direction around a rotation axis along the vertical direction;
    A proximity step of bringing the facing member close to the substrate so that an elastic member fixed to the facing member facing the substrate from below is in contact with the lower surface of the substrate;
    A substrate rotating step of rotating the substrate by rotating the base in a state where the plurality of holding pins hold the peripheral edge of the substrate and the elastic member is in contact with the lower surface of the substrate;
    A substrate processing method comprising: a processing liquid supply step of supplying a processing liquid for processing a substrate on an upper surface of a rotating substrate.
PCT/JP2018/005308 2017-03-08 2018-02-15 Substrate processing apparatus and substrate processing method WO2018163749A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140155A (en) * 2002-10-17 2004-05-13 Tokyo Electron Ltd Liquid processor
JP2012199408A (en) * 2011-03-22 2012-10-18 Dainippon Screen Mfg Co Ltd Substrate processing device
JP2013069773A (en) * 2011-09-21 2013-04-18 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2013229552A (en) * 2011-12-19 2013-11-07 Dainippon Screen Mfg Co Ltd Substrate holding rotary device, substrate processing apparatus including the same, and substrate processing method
JP2016132056A (en) * 2015-01-19 2016-07-25 株式会社ディスコ Holding method of plate-like work

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4397299B2 (en) * 2004-07-30 2010-01-13 大日本スクリーン製造株式会社 Substrate processing equipment
JP5310693B2 (en) * 2010-10-07 2013-10-09 東京エレクトロン株式会社 Liquid processing equipment
JP6143572B2 (en) * 2013-06-18 2017-06-07 株式会社Ｓｃｒｅｅｎホールディングス Substrate holding and rotating apparatus, substrate processing apparatus including the same, and substrate processing method
US10037902B2 (en) * 2015-03-27 2018-07-31 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140155A (en) * 2002-10-17 2004-05-13 Tokyo Electron Ltd Liquid processor
JP2012199408A (en) * 2011-03-22 2012-10-18 Dainippon Screen Mfg Co Ltd Substrate processing device
JP2013069773A (en) * 2011-09-21 2013-04-18 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2013229552A (en) * 2011-12-19 2013-11-07 Dainippon Screen Mfg Co Ltd Substrate holding rotary device, substrate processing apparatus including the same, and substrate processing method
JP2016132056A (en) * 2015-01-19 2016-07-25 株式会社ディスコ Holding method of plate-like work

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