WO2018155538A1

WO2018155538A1 - Electron beam apparatus and exposure method, and device production method

Info

Publication number: WO2018155538A1
Application number: PCT/JP2018/006396
Authority: WO
Inventors: 真路佐藤
Original assignee: 株式会社ニコン
Priority date: 2017-02-24
Filing date: 2018-02-22
Publication date: 2018-08-30
Also published as: TW201837966A

Abstract

This electron beam apparatus comprises: an optical device (84) capable of providing a plurality of light beams which can be controlled individually; an illuminating system (82) which can direct illuminating light onto the optical device; a projection optical system (86) which can direct the plurality of light beams from the optical device (84) onto a photoelectric element (54); and an electron beam optical system (70) which can irradiate a wafer (W) with, as a plurality of electron beams, electrons discharged from the photoelectric element (54) as a result the plurality of optical beams being directed onto the photoelectric element (54).

Description

Electron beam apparatus, exposure method, and device manufacturing method

The present invention relates to an electron beam apparatus, an exposure method, and a device manufacturing method, and more particularly to an electron beam apparatus, an exposure method, and an electron that irradiate light onto a photoelectric element and irradiate a target with an electron beam generated from the photoelectric element. The present invention relates to a device manufacturing method using a beam apparatus or an exposure method.

Recently, complementary lithography using, for example, an immersion exposure technique using an ArF excimer laser light source and a charged particle beam exposure technique (for example, an electron beam exposure technique) has been proposed. In complementary lithography, for example, a simple line and space pattern (hereinafter, abbreviated as an L / S pattern as appropriate) is formed by using double patterning or the like in immersion exposure using an ArF excimer laser light source. Next, a line pattern is cut or a via is formed through exposure using an electron beam.

In complementary lithography, for example, an electron beam exposure apparatus including a multi-beam optical system that turns on and off a beam using a plurality of blanking apertures can be used (for example, see Patent Documents 1 and 2). However, not limited to the blanking / aperture method, in the case of an electron beam exposure apparatus, there are points to be improved such as generation of useless electrons that do not contribute to the processing of the target and unevenness in the intensity of the electron beam irradiation area on the target. To do. The same problem may occur not only in the exposure apparatus but also in an apparatus that performs processing or processing on a target using an electron beam, processing and processing, or an inspection apparatus.

JP 2015-133400 A US Patent Application Publication No. 2015/0200074

According to the first aspect of the present invention, there is provided an electron beam apparatus that irradiates a photoelectric element with light and irradiates a target with electrons generated from the photoelectric element as an electron beam, and a plurality of individually controllable lights An optical device capable of providing a beam, an illumination system for irradiating the optical device with illumination light, and a first optical system for irradiating the photoelectric element with a plurality of light beams generated from a plurality of light beams from the optical device And a second optical system that irradiates the target with electrons emitted from the photoelectric element as a plurality of electron beams by irradiating the photoelectric element with the plurality of light beams. The

According to the second aspect of the present invention, there is provided an electron beam apparatus for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element as an electron beam, wherein the plurality of individually controllable lights An optical device capable of providing a beam; a first optical system for irradiating the photoelectric element with a plurality of light beams generated by a plurality of light beams from the optical device; and irradiating the photoelectric element with the plurality of light beams A second optical system for irradiating the target with electrons emitted from the photoelectric element as a plurality of electron beams, and one of the plurality of light beams irradiated on the photoelectric element, An electron beam apparatus is provided that can be generated with a portion of two or more of the plurality of light beams from the optical device.

According to a third aspect of the present invention, there is provided an electron beam apparatus for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element by irradiation of the light as an electron beam, An optical device capable of providing a plurality of individually controllable light beams by irradiation of illumination light from the illumination system; and a plurality of light beams generated from the plurality of light beams from the optical device A first optical system that irradiates the target and a second optical system that irradiates the target with one or more electron beams generated from the photoelectric element, and the illumination light from the illumination system has a first axis An illumination area having a dimension along the direction smaller than a dimension along the second axis perpendicular to the first axis, the third axis perpendicular to the first axis and the second axis, and the first axis; Located in the plane containing Illuminated from serial first axis and the direction of the axis intersecting the third axis, wherein the optical device, the illumination area arranged to have an electron beam device is provided.

According to a fourth aspect of the present invention, there is provided an electron beam device for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element by irradiation with the light as an electron beam, wherein the first axis A plurality of first optical systems that irradiate at least one light beam to each of a plurality of photoelectric elements arranged along a second axis orthogonal to the first axis, and a plurality of first optical systems arranged along the second axis. A plurality of second optical systems for irradiating the target with each of a plurality of electron beams generated from the plurality of photoelectric elements by irradiation of the light beam by an optical system, wherein the first axis and the second axis are An electron beam device that is perpendicular to the optical axis of the second optical system is provided.

According to a fifth aspect of the present invention, there is provided a device manufacturing method including a lithography process, wherein the lithography process includes forming a line and space pattern on a target and any one of the first to fourth aspects. A device manufacturing method including cutting the line pattern constituting the line and space pattern using the electron beam apparatus according to the present invention is provided.

According to a sixth aspect of the present invention, there is provided an exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element as an electron beam, wherein the plurality of individually controllable light beams Irradiating the optical device capable of providing the illumination light from the illumination system, and irradiating the photoelectric element with the plurality of light beams generated from the plurality of light beams from the optical device via the first optical system And irradiating the target from the second optical system as a plurality of electron beams emitted from the photoelectric element by irradiating the photoelectric element with the plurality of light beams, Provided.

According to a seventh aspect of the present invention, there is provided an exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element as an electron beam, wherein the plurality of individually controllable light beams Irradiating the photoelectric element with a plurality of light beams generated from a plurality of light beams from an optical device capable of providing light, and irradiating the photoelectric element with the plurality of light beams Irradiating the target from the second optical system with electrons emitted from the photoelectric element as a plurality of electron beams, and one of the plurality of light beams irradiated to the photoelectric element, Another one of the plurality of light beams generated by a part of two or more light beams of the plurality of light beams from the optical device and applied to the photoelectric element is converted into the optical device. Another exposure method for generating at least two light beams of the plurality of light beams from the chair is provided.

According to an eighth aspect of the present invention, there is provided an exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element as an electron beam, wherein the plurality of individually controllable light beams Irradiating the photoelectric element with a plurality of light beams generated by a plurality of light beams from an optical device capable of providing light, and irradiating the photoelectric element with the plurality of light beams Irradiating the target from the second optical system with electrons emitted from the photoelectric element as a plurality of electron beams, and one of the plurality of light beams irradiated to the photoelectric element is An exposure method is provided that generates with two or more of a plurality of light beams from an optical device.

According to a ninth aspect of the present invention, there is provided an exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element by irradiation with the light as an electron beam, from an illumination system Irradiating the photoelectric element through the first optical system with a plurality of light beams generated from a plurality of light beams from an optical device capable of providing a plurality of individually controllable light beams by irradiation of illumination light And irradiating the target with one or more electron beams generated from the photoelectric element from a second optical system, and the illumination light from the illumination system is in a direction along a first axis. An in-plane including a first axis, a third axis perpendicular to the second axis, and the first axis, an illumination area having a dimension smaller than a dimension in a direction along a second axis perpendicular to the first axis Located in the first axis and front Illuminating from the direction of the axis intersecting the third axis, wherein the optical device is an exposure method that is disposed in the illumination area is provided.

According to a tenth aspect of the present invention, there is provided an exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element by irradiation of the light as an electron beam. Irradiating each of the plurality of photoelectric elements arranged along the second axis perpendicular to each other with at least one light beam via the plurality of first optical systems; and arranging the plurality of photoelectric elements arranged along the second axis, Irradiating the target with each of a plurality of electron beams generated from the plurality of photoelectric elements by irradiating the light beam with the first optical system via a plurality of second optical systems, An exposure method is provided in which the axis and the second axis are perpendicular to the optical axis of the second optical system.

According to an eleventh aspect of the present invention, there is provided a device manufacturing method including a lithography process, wherein the lithography process includes forming a line and space pattern on a target, and any of the sixth to tenth aspects. A device manufacturing method is provided that includes cutting the line pattern constituting the line and space pattern using the exposure method according to the above.

It is a figure which shows schematically the structure of the exposure apparatus which concerns on 1st Embodiment. FIG. 2 is a perspective view showing a cross section of the electron beam optical unit of FIG. 1. It is a longitudinal section showing an electron beam optical unit. 4A to 4C are diagrams (Nos. 1 to 3) for explaining the configuration of the photoelectric capsule and the procedure for mounting the lid member on the main body in the factory of the photoelectric capsule manufacturer. . It is FIG. (1) for demonstrating a part of assembly procedure of an electron beam optical unit. It is FIG. (2) for demonstrating a part of assembly procedure of an electron beam optical unit. It is FIG. (3) for demonstrating a part of assembly procedure of an electron beam optical unit. FIG. 8A is a partially omitted longitudinal sectional view showing a photoelectric element provided in the photoelectric capsule, and FIG. 8B is a partially omitted plan view showing the photoelectric element. It is the top view which abbreviate | omitted a part which shows a lid | cover storage plate. It is a figure which shows the some pattern projection apparatus in an optical unit with an electron beam optical unit. FIG. 11A is a diagram illustrating the configuration of the light irradiation device viewed from the + X direction, and FIG. 11B is a diagram illustrating the configuration of the light irradiation device viewed from the −Y direction. 12A is a perspective view showing the light diffraction type light valve, and FIG. 12B is a side view showing the light diffraction type light valve. It is a top view which shows a pattern generator. FIG. 14A is a diagram showing the configuration of the electron beam optical system viewed from the + X direction, and FIG. 14B is a diagram showing the configuration of the electron beam optical system viewed from the −Y direction. FIGS. 15A to 15C are diagrams for explaining the correction of the reduction magnification in the X-axis direction and the Y-axis direction by the first electrostatic lens. It is a perspective view which shows the external appearance of 45 electron beam optical systems supported by the base plate in the suspended state. Correspondence between the irradiation area of the laser beam on the light receiving surface of the pattern generator, the irradiation area of the laser beam on the surface of the photoelectric element, and the irradiation area (exposure area) of the electron beam on the image plane (wafer surface) It is a figure which shows a relationship. FIG. 3 is a block diagram showing an input / output relationship of a main controller that mainly constitutes a control system of an exposure apparatus. It is a figure for demonstrating the merit of the rectangular field compared with the square field. FIG. 20A and FIG. 20B are diagrams for explaining correction of a cut pattern shape change (rounding of four corners) caused by blur and resist blur caused by the optical system. FIGS. 21A and 21B are diagrams for explaining correction of distortion common to a plurality of electron beam optical systems. It is a top view which shows an example of the pattern generator which has a ribbon row | line | column for backup. FIG. 23A and FIG. 23B are diagrams for explaining a correction ribbon row. FIGS. 24A to 24D are diagrams showing various types of configuration examples of the optical pattern forming unit. FIG. 25A is an explanatory diagram showing a method not using an aperture, and FIG. 25B is an explanatory diagram showing a method using an aperture. It is a figure which shows schematically the structure of the exposure apparatus which concerns on 2nd Embodiment. It is a figure which shows the structure inside a housing | casing corresponding to one electron beam optical system of the exposure apparatus which concerns on 2nd Embodiment. FIGS. 28A to 28E are diagrams showing various configuration examples of the aperture-integrated photoelectric element. FIG. 29 is a diagram for explaining a method of compensating for the curvature of field that the electron beam optical system has as an aberration. It is a figure which shows an example of the multi-pitch type aperture integrated photoelectric element in which aperture rows having different pitches are formed every other row. FIGS. 31A to 31C are diagrams showing a procedure for forming a cut pattern for cutting line patterns having different pitches using the aperture-integrated photoelectric element of FIG. FIG. 32A is a diagram for explaining an example of the configuration of the aperture-separated photoelectric element, and FIGS. 32B to 32E are diagrams showing various configuration examples of the aperture plate. It is a figure for demonstrating one Embodiment of a device manufacturing method.

<< First Embodiment >>
Hereinafter, a first embodiment will be described with reference to FIGS. FIG. 1 schematically shows a configuration of an exposure apparatus 100 according to the first embodiment. Since the exposure apparatus 100 includes a plurality of electron beam optical systems as will be described later, hereinafter, the exposure apparatus 100 takes the Z axis parallel to the optical axis of the electron beam optical system and performs exposure described later in a plane perpendicular to the Z axis. The scanning direction in which the wafer W is moved is the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is the X-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are θx and θy, respectively. And the θz direction will be described.

The exposure apparatus 100 is supported by a frame 16 on the floor surface F, a stage chamber 10 installed on the floor surface F of the clean room, a stage system 14 disposed in the exposure chamber 12 inside the stage chamber 10, An optical system 18 disposed above the stage system 14.

The stage chamber 10 is a vacuum chamber capable of evacuating the inside of the stage chamber 10 although illustration of both end portions in the X-axis direction is omitted in FIG. The stage chamber 10 surrounds the periphery of the bottom wall 10a, the bottom wall 10a arranged on the floor F parallel to the XY plane, the frame 16 serving also as the upper wall (ceiling wall) of the stage chamber 10, and A peripheral wall 10b that horizontally supports the frame 16 from below (only a part of the + Y side portion is shown in FIG. 1) is provided. Both the frame 16 and the bottom wall 10a are formed of a plate member having a rectangular shape in plan view, and the frame 16 has an opening 16a having a circular shape in plan view in the vicinity of the center portion thereof. A second portion 19b having a small diameter of a casing 19 of an electron beam optical unit 18A, which will be described later, having a stepped columnar appearance is inserted into the opening 16a from above, and a first portion 19a having a large diameter of the casing 19 is The upper surface of the frame 16 around the opening 16a is supported from below. Although not shown, the space between the inner peripheral surface of the opening 16a and the second portion 19b of the housing 19 is sealed with a seal member. A stage system 14 is disposed on the bottom wall 10 a of the stage chamber 10.

The stage system 14 is supported by a surface plate 22 supported on the bottom wall 10a via a plurality of vibration isolating members 20, and a weight canceling device 24 on the surface plate 22, and is respectively predetermined in the X-axis direction and the Y-axis direction. , For example, a wafer stage WST that can move in the remaining four degrees of freedom (Z-axis, θx, θy, and θz directions), and a stage drive system 26 that drives the wafer stage WST (see FIG. 1 includes only a part thereof (see FIG. 18), and a position measurement system 28 (not shown in FIG. 1, refer to FIG. 18) that measures position information of the wafer stage WST in the direction of six degrees of freedom. . Wafer stage WST attracts and holds wafer W via an electrostatic chuck (not shown) provided on the upper surface thereof.

As shown in FIG. 1, wafer stage WST is composed of a member having a rectangular frame shape with an XZ cross section, and has a yoke and a magnet (not shown) having a rectangular frame shape with an XZ cross section on the inside (hollow portion). 30 movers 30a are integrally fixed, and a stator 30b of a motor 30 including a coil unit extending in the Y-axis direction is inserted into the mover 30a (hollow portion). The both ends of the stator 30b in the longitudinal direction are connected to an X stage (not shown) that moves on the surface plate 22 in the X-axis direction. The X stage is integrated with wafer stage WST at a predetermined stroke in the X-axis direction by an X stage drive system 32 (see FIG. 18) constituted by a uniaxial drive mechanism that does not cause magnetic flux leakage, for example, a feed screw mechanism using a ball screw. It is driven by. Note that the X stage drive system 32 may be configured by a uniaxial drive mechanism including an ultrasonic motor as a drive source. In any case, the influence of magnetic field fluctuations due to magnetic flux leakage on the positioning of the electron beam is negligible.

The motor 30 can move the mover 30a with respect to the stator 30b with a predetermined stroke, for example, 50 mm in the Y-axis direction, and can be finely driven in the X-axis direction, Z-axis direction, θx direction, θy direction, and θz direction. This is a closed magnetic field type and moving magnet type motor. In the present embodiment, a wafer stage drive system is configured in which wafer stage WST is driven in the direction of six degrees of freedom by motor 30. Hereinafter, the wafer stage drive system is referred to as a wafer stage drive system 30 using the same reference numerals as those of the motor 30.

The X stage drive system 32 and the wafer stage drive system 30 drive the wafer stage WST in the X axis direction and the Y axis direction with a predetermined stroke, for example, 50 mm, and the remaining four degrees of freedom (Z axis, θx, The stage drive system 26 described above that is finely driven in the θy and θz directions) is configured. The X stage drive system 32 and the wafer stage drive system 30 are controlled by the main controller 110 (see FIG. 18).

A magnetic shield member (not shown) having an inverted U-shaped XZ cross-section covering the upper surface of the motor 30 and both side surfaces in the X-axis direction is a pair of protrusions provided at both ends in the Y-axis direction of an X stage (not shown). It is erected between the clubs. This magnetic shield member is inserted into the hollow portion of wafer stage WST in a state that does not hinder movement of mover 30a relative to stator 30b. Since the magnetic shield member covers the upper surface and the side surface of the motor 30 over the entire length of the moving stroke of the mover 30a and is fixed to the X stage, the magnetic shielding member covers the entire moving range of the wafer stage WST and the X stage. , Leakage of magnetic flux upward (to be described later with respect to the electron beam optical system side) can be prevented with certainty.

The weight canceling device 24 includes a metal bellows type air spring (hereinafter abbreviated as “air spring”) 24 a whose upper end is connected to the lower surface of wafer stage WST, and a flat plate member connected to the lower end of air spring 24 a. A base slider 24b. The base slider 24b is provided with a bearing portion (not shown) that blows the air inside the air spring 24a to the upper surface of the surface plate 22, and the bearing surface of the pressurized air ejected from the bearing portion and the upper surface of the surface plate 22 are provided. The weight canceling device 24, the wafer stage WST (including the mover 30a), and the own weight of the wafer W are supported by the static pressure (pressure in the gap). Note that compressed air is supplied to the air spring 24a via a pipe (not shown) connected to the wafer stage WST. The base slider 24b is supported in a non-contact manner on the surface plate 22 via a kind of differential exhaust type aerostatic bearing, and air blown from the bearing portion toward the surface plate 22 is surrounded by (exposure chamber). To prevent leakage. In practice, a pair of pillars are provided on the bottom surface of wafer stage WST with air spring 24a sandwiched in the Y-axis direction, and a leaf spring provided at the lower end of the pillar is connected to air spring 24a.

As described above, the optical system 18 includes the electron beam optical unit 18A held on the frame 16, and the optical unit 18B mounted on the electron beam optical unit 18A.

FIG. 2 shows a cross-sectional perspective view of the electron beam optical unit 18A. FIG. 3 shows a longitudinal sectional view of the electron beam optical unit 18A. As shown in these drawings, the electron beam optical unit 18A includes a housing 19 having an upper first portion 19a and a lower second portion 19b.

The first portion 19a of the housing 19 has a cylindrical shape with a low height, as is apparent from FIG. As shown in FIGS. 1 and 3, for example, a first vacuum chamber 34 is formed inside the first portion 19a. As shown in FIG. 1 and the like, the first vacuum chamber 34 is composed of a first plate 36 made of a circular plate member that forms an upper wall (ceiling wall), and a plate member having the same diameter as the first plate 36. And is divided from a second plate (hereinafter referred to as a base plate) 38 constituting a bottom wall, a cylindrical side wall portion 40 surrounding the first plate 36 and the base plate 38, and the like.

As shown in FIG. 3 and the like, the first plate 36 has a plurality of circular through holes 36a that are circular in plan view at predetermined intervals in the XY two-dimensional direction. Here, as an example, four corners of a matrix of 7 rows and 7 columns. 45 (= 7 × 7−4) are formed in an arrangement excluding. As shown in FIG. 3, a photoelectric capsule main body 52 to be described below is inserted into the 45 through holes 36 a from above with almost no gap.

As shown in FIGS. 4A and 5, the photoelectric capsule 50 has a columnar shape in which an opening 52 c is formed on one end surface (the lower end surface in FIG. 4A) and has a hollow portion 52 b inside. The other end (upper end in FIG. 4 (A)) is provided with the main-body part 52 provided with the flange part 52a, and the cover member 64 which can obstruct | occlude the opening 52c. The hollow portion 52b is a hollow portion having a shape obtained by forming a round hole with a predetermined depth from the lower end surface of the main body portion 52 and further forming a substantially conical recess on the bottom surface of the round hole. The upper surface of the main body 52 including the flange 52a is a square in plan view, and the center of the square coincides with the central axis of the hollow 52b. A photoelectric element 54 is provided at the center of the upper surface of the main body 52. The photoelectric element 54 is a transparent plate member (for example, quartz glass) that forms the uppermost surface of the main body 52 that also serves as a vacuum partition, as shown in the longitudinal sectional view of FIG. ) 56, a light shielding film (aperture film) 58 made of, for example, chromium deposited on the lower surface of the plate member 56, and an alkali photoelectric film (photoelectric conversion film) formed on the lower surface side of the plate member 56 and the light shielding film 58. ) 60 (alkali photoelectric conversion layer (alkali photoelectric layer)). A large number of apertures 58 a are formed in the light shielding film 58. Although only a part of the photoelectric element 54 is shown in FIG. 8A, in reality, a large number of apertures 58a are formed in the light shielding film 58 in a predetermined positional relationship (FIG. B)). The number of apertures 58a may be the same as the number of multi-beams described later, or may be larger than the number of multi-beams. The alkali photoelectric layer 60 is also disposed inside the aperture 58a, and the plate member 56 and the alkali photoelectric layer 60 are in contact with each other in the aperture 58a. In the present embodiment, the plate member 56, the light shielding film 58, and the alkali photoelectric layer 60 are integrally formed to form at least a part of the photoelectric element 54.

The alkali photoelectric layer 60 is a multi-alkali photocathode using two or more kinds of alkali metals. The multi-alkali photocathode is a photocathode characterized by high durability, capable of generating electrons with green light having a wavelength of 500 nm, and a high quantum efficiency QE of the photoelectric effect of about 10%. In the present embodiment, since the alkali photoelectric layer 60 is used as a kind of electron gun that generates an electron beam by a photoelectric effect by laser light, a highly efficient one having a conversion efficiency of 10 [mA / W] is used. . In the photoelectric element 54, the electron emission surface of the alkali photoelectric layer 60 is a surface opposite to the lower surface in FIG. 8A, that is, the upper surface of the plate member 56.

As shown in FIG. 4A or the like, a planar view annular groove having a predetermined depth is formed on the lower end surface of the main body 52 in a planar view, and a kind of seal member is formed in the recessed groove. The O-ring 62 is attached so that a part of the O-ring 62 is housed in the concave groove.

The lid member 64 is formed of a plate member having a circular shape in plan view similar to the outer peripheral edge (contour) of the lower end surface of the main body portion 52, and is removed in a vacuum as will be described later. And the open end of the main body 52 is closed (see FIG. 5). That is, since the closed space (hollow part 52 b) inside the main body 52 closed by the lid member 64 is a vacuum space, the lid member 64 is crimped to the main body 52 by the atmospheric pressure acting on the lid member 64. Has been.

It should be noted that a series of flows until the lid member is opened by the exposure apparatus manufacturer, including during the conveyance of the photoelectric capsule manufactured by the photoelectric capsule manufacturer, will be described in detail later.

Returning to the description of the electron beam optical unit 18A. As shown in FIG. 5, a lid storage plate 68 that is driven in three directions of the X-axis, Y-axis, and Z-axis directions is stored in the first vacuum chamber 34 by a pair of vacuum-compatible actuators 66. Has been. As shown in FIG. 5, 45 round holes 68 a having a predetermined depth are formed on the top surface of the lid storage plate 68 in an arrangement corresponding to the arrangement of the 45 photoelectric capsules 50. A circular through hole 68b is formed on the inner bottom surface. The number of round holes 68a may not be the same as the number of photoelectric capsules 50. Further, the lid member 64 may be supported by the lid storage plate 38 without providing the round hole 68a.

Further, as shown in FIG. 9, which is a plan view with a part omitted of the lid storage plate 68, the lid storage plate 68 finally has an optical path (electron beam) between the round hole 68a and the round hole 68a. A circular opening 68c that may be called a beam path) is formed. If the lid storage plate 68 can be retracted from the electron beam path, the opening 68c need not be provided.

In the base plate 38, as shown in FIG. 3 and the like, 45 concave portions 38a having a predetermined depth are formed on the central axes of the main body portions 52 of the 45 photoelectric capsules 50, respectively. These concave portions 38a have a predetermined depth from the upper surface of the base plate 38, and through holes 38b functioning as throttle portions are formed in the inner bottom surface. Hereinafter, the through hole 38b is also referred to as a throttle portion 38b. The diaphragm 38b will be further described later.

On the lower surface of the base plate 38, 45 electron beam optical systems 70 having their optical axes AXe positioned on the central axes of the main body portions 52 of the 45 photoelectric capsules 50 are fixed in a suspended state. The support of the electron beam optical system 70 is not limited to this. For example, 45 electron beam optical systems 70 are supported by a support member different from the base plate 38, and the support members are supported by the second portion 19 b of the housing 19. You may support with. The electron beam optical system 70 will be described in detail later.

As apparent from FIGS. 1 and 2, the second portion 19b of the housing 19 has a cylindrical shape with a smaller diameter and a somewhat higher height than the first portion. A second vacuum chamber 72 (see FIGS. 1 and 3) for accommodating 45 electron beam optical systems 70 is formed inside the second portion 19b. As shown in FIGS. 1 and 2, the second vacuum chamber 72 includes the aforementioned base plate 38 that constitutes the upper wall (ceiling wall), and a thin plate-like cooling plate 74 that constitutes the bottom wall and has a circular shape in plan view. The cooling plate 74 has an outer diameter substantially the same as the diameter of the cooling plate 74, and the cooling plate 74 is partitioned by a cylindrical peripheral wall portion 76 fixed to the lower end surface thereof. By fixing the upper surface of the peripheral wall part 76 to the lower surface of the base plate 38, the 1st part 19a and the 2nd part 19b are integrated, and the housing | casing 19 is comprised by this. The cooling plate 74 has a function of suppressing fogging, which will be described later, in addition to the cooling function.

The first vacuum chamber 34 and the second vacuum chamber 72 can be evacuated inside (see the white arrow in FIG. 2). In addition to the first vacuum pump for evacuating the first vacuum chamber 34, a second vacuum pump for evacuating the second vacuum chamber 72 may be provided, or the first vacuum pump may be provided using a common vacuum pump. The vacuum chamber 34 and the second vacuum chamber 72 may be evacuated. The degree of vacuum in the first vacuum chamber 34 and the degree of vacuum in the second vacuum chamber 72 may be different. Further, for maintenance or the like, one of the first vacuum chamber 34 and the second vacuum chamber 72 may be an atmospheric pressure space and the other may be a vacuum space. In the present embodiment, the throttle part 38b is provided so that the degree of vacuum of the first vacuum chamber 34 and the degree of vacuum of the second vacuum chamber 72 can be made different. The vacuum chamber 34 and the second vacuum chamber 72 may be substantially one vacuum chamber.

As shown in FIG. 1, the optical unit 18B includes a lens barrel (housing) 78 mounted on the electron beam optical unit 18A and 45 light irradiation devices (optical systems) housed in the lens barrel 78. 80). The 45 light irradiation devices 80 are arranged in the XY plane in an arrangement corresponding to each of the main body portions 52 of the 45 photoelectric capsules 50. The interior of the lens barrel 78 is an atmospheric pressure space.

Each of the 45 light irradiation devices 80 is provided corresponding to the 45 photoelectric capsules 50 (photoelectric elements 54), and at least one light beam from the light irradiation device 80 passes through the aperture 58a of the photoelectric element 54. An alkali photoelectric layer (hereinafter abbreviated as a photoelectric layer) 60 is irradiated. Note that the number of the light irradiation devices 80 and the number of the photoelectric capsules 50 may not be equal.

Each of the 45 light irradiation devices 80 includes, for example, an illumination system 82, a pattern generator 84 that generates patterned light, and a projection optical system 86, as shown in FIG. The pattern generator 84 may be referred to as a spatial light modulator that spatially modulates and emits the amplitude, phase, and polarization state of light traveling in a predetermined direction. The pattern generator 84 can generate an optical pattern composed of, for example, a light / dark pattern.

FIGS. 11A and 11B show an example of the configuration of the light irradiation device 80 together with the main body 52 of the corresponding photoelectric capsule 50. Among these, FIG. 11A shows a configuration viewed from the + X direction, and FIG. 11B shows a configuration viewed from the −Y direction. As shown in FIGS. 11A and 11B, the illumination system 82 includes a light source unit 82a that generates illumination light (laser light) LB, and the illumination light LB as one or more X axes. And a shaping optical system 82b for shaping into a beam having a rectangular cross section which is long in the direction.

The light source unit 82a includes a laser diode 88 that continuously oscillates visible light as a light source or a wavelength in the vicinity of visible light, for example, a laser beam having a wavelength of 365 nm, and an AO deflector (AOD or optical deflection) disposed on the optical path of the laser light. 90) (also referred to as an element). Here, the AO deflector 90 functions as a switching element, and is used to intermittently emit laser light. That is, the light source unit 82a is a light source unit capable of intermittently emitting laser light (laser beam) LB having a wavelength of 365 nm. Note that the light emission duty ratio of the light source unit 82a can be changed by controlling the AO deflector 90, for example. The switching element is not limited to an AO deflector, and may be an AOM (acousto-optic modulation element). The laser diode 88 itself may emit light intermittently.

The shaping optical system 82b includes a diffractive optical element (also referred to as DOE) 92, an illuminance distribution adjusting element 94, and a condensing element that are sequentially arranged on the optical path of a laser beam (hereinafter, abbreviated as a beam as appropriate) LB from the light source unit 82a. A lens 96 is included.

When the laser beam from the AO deflector 90 is incident, the diffractive optical element 92 has a plurality of laser beams that are long in the X-axis direction arranged at predetermined intervals in the Y-axis direction on a predetermined surface on the exit surface side of the diffractive optical element 92. The in-plane intensity distribution of the laser beam is converted so as to have a distribution in which the light intensity is large in a rectangular region (in the present embodiment, a long and narrow slit shape). In the present embodiment, the diffractive optical element 92 receives a plurality of rectangular beams (slit-shaped beams) that are long in the X-axis direction and are arranged at predetermined intervals in the Y-axis direction by the incidence of the laser beam from the AO deflector 90. Generate. In the present embodiment, as will be described in detail later, the number of slit-shaped beams according to the configuration of the pattern generator 84 is generated. The element that converts the in-plane intensity distribution of the laser beam is not limited to a diffractive optical element, and may be a refractive optical element, a reflective optical element, or a spatial light modulator.

The illuminance distribution adjusting element 94 can individually adjust the illuminance for each divided region in each divided region obtained by dividing the light receiving surface of the pattern generator 84 into a plurality of beams when the pattern generator 84 is irradiated with a plurality of beams. To do. In the present embodiment, as the illuminance distribution adjusting element 94, a crystal having a nonlinear optical effect whose refractive index changes in accordance with an applied voltage, for example, lithium tantalate (lithium tantalate (abbreviation: LT) single crystal) is a plurality of XY planes. Are arranged in a plane parallel to each other, and an element configured by arranging polarizers on the incident side and the emission side is used. In this embodiment, as schematically shown in a circle of FIG. 11A, as an example, 24 lithium tantalate crystals 94a are arranged in a matrix of, for example, 2 rows and 12 columns in an XY plane at a pitch of 1 mm. The arranged illuminance distribution adjusting element 94 is used. Reference numeral 94b indicates an electrode. According to the illuminance distribution adjusting element 94 having such a configuration, the exit-side deflector passes only a predetermined polarization component, so that the polarization state of light incident on the crystal through the incident-side polarizer is changed, for example, linearly polarized light. By changing from to circularly polarized light, the intensity of the light emitted from the exit-side polarizer can be changed. In this case, the change in the deflection state can be made variable by controlling the voltage applied to the crystal. Therefore, by controlling the voltage applied to each crystal, the illuminance can be adjusted for each region corresponding to each crystal (the region surrounded by the two-dot chain line in FIG. 13) (see FIG. 11A). ). The illuminance distribution adjusting element 94 is not limited to lithium tantalate, and may be configured using other light intensity modulation crystals (electro-optic elements) such as lithium niobate (lithium niobate (abbreviation: LN) single crystal). . When the intensity of at least one light beam irradiated to the photoelectric element 54 can be adjusted using the pattern generator 84 or an optical member disposed between the pattern generator 84 and the photoelectric element 54, the illuminance distribution The adjustment element 94 may not be provided. As the illuminance distribution adjusting element 94, a spatial light modulator that spatially modulates the amplitude, phase, and polarization state of the emitted light, for example, a transmissive liquid crystal element or a reflective liquid crystal element may be used.

In this embodiment, as will be described later, since a reflective spatial light modulator is used as the pattern generator 84, an optical path bending mirror 98 is disposed on the light exit side below the condenser lens 96. Yes. The condensing lens 96 condenses a plurality of rectangular cross-section (slit-shaped) beams generated by the diffractive optical element 92 with respect to the Y-axis direction and irradiates the mirror 98. For example, a cylindrical lens that is long in the X-axis direction can be used as the condenser lens 96. The condensing lens 96 may be composed of a plurality of lenses. Instead of the condenser lens, a reflective optical member such as a condenser mirror or a diffractive optical element may be used. Further, the mirror 98 is not limited to a plane mirror, and may have a curvature. When the mirror 98 has a curvature (has a finite focal length), the function of the condenser lens 96 can also be used.

The mirror 98 is arranged at a predetermined angle with respect to the XY plane, and reflects a plurality of irradiated slit-like beams in an obliquely upper left direction in FIG.

The pattern generator 84 is disposed on the reflected light path of a plurality of slit-like beams reflected by the mirror 98. More specifically, the pattern generator 84 is disposed on the −Z side surface of the circuit board 102 disposed between the condenser lens 96 and the mirror 98 in the Z-axis direction. Here, in the circuit board 102, as shown in FIG. 11A, openings 102a serving as optical paths of a plurality of slit-shaped beams from the condenser lens 96 toward the mirror 98 are formed.

In this embodiment, the pattern generator 84 is configured by a light diffraction type light valve (GLV (registered trademark)) which is a kind of programmable spatial light modulator. As shown in FIGS. 12A and 12B, the light diffraction type light valve GLV includes a fine structure (hereinafter referred to as a ribbon) of a silicon nitride film called a “ribbon” on a silicon substrate (chip) 84a. 84b) is a spatial light modulator formed with thousands of scales.

The driving principle of GLV is as follows.

By electrically controlling the deflection of the ribbon 84b, the GLV functions as a programmable diffraction grating, with high resolution, high speed (responsiveness 250kHz to 1MHz), high accuracy, dimming, modulation and laser light. Enable switching. GLV is classified as a microelectromechanical system (MEMS). The ribbon 84b is made of an amorphous silicon nitride film (Si ₃ N ₄ ), which is a kind of high-temperature ceramic having strong characteristics in hardness, durability, and chemical stability. Each ribbon has a width of 2 to 4 μm and a length of 100 to 300 μm. The ribbon 84b is covered with an aluminum thin film and has both functions of a reflector and an electrode. The ribbon is stretched across the common electrode 84c, and when a control voltage is supplied to the ribbon 84b from a driver (not shown in FIGS. 12A and 12B), the ribbon bends toward the substrate 84a due to static electricity. . When the control voltage is lost, the ribbon 84b returns to its original state due to the high tension inherent in the silicon nitride film. That is, the ribbon 84b is a kind of movable reflective element.

There are two types of GLV: an active ribbon whose position changes due to voltage application, and a bias ribbon that has fallen to the ground and does not change its position, and a type in which all are active ribbons. The latter type is used in the form.

In the present embodiment, a pattern made of GLV on the −Z side surface of the circuit board 102 shown in FIG. 11A or the like with the ribbon 84b positioned on the −Z side and the silicon substrate 84a positioned on the + Z side. A generator 84 is attached. The circuit board 102 is provided with a CMOS driver (not shown) for supplying a control voltage to the ribbon 84b. In the following description, for convenience, the pattern generator 84 including the CMOS driver is called.

As shown in FIG. 13, the pattern generator 84 used in this embodiment includes a ribbon row 85 having, for example, 6000 ribbons 84b. The longitudinal direction (the direction in which the ribbons 84b are arranged) is set as the X axis direction, and the Y axis For example, 12 rows are formed on the silicon substrate at predetermined intervals in the direction. The ribbon 84b of each ribbon row 85 is stretched on the common electrode. In the present embodiment, the ribbons 84b are driven mainly for switching (on / off) of laser light by applying a voltage at a certain level and releasing the application. However, since the GLV can adjust the intensity of the diffracted light according to the applied voltage, the applied voltage is set when the intensity of at least some of the plurality of beams from the pattern generator 84 needs to be adjusted as will be described later. Tweaked. For example, when light of the same intensity is incident on each ribbon, a plurality of light beams having different intensities can be generated from the pattern generator 84.

In the present embodiment, twelve slit-shaped beams are generated by the diffractive optical element 92, and these twelve beams pass through the illuminance distribution adjusting element 94, the condensing lens 96, and the mirror 98 to each ribbon row 85. A slit-like beam LB that is long in the X-axis direction is irradiated at the center. In the present embodiment, the irradiation area of the beam LB on each ribbon 84b is a square area. In addition, the irradiation area of the beam LB with respect to each ribbon 84b may not be a square area. It may be a rectangular region that is long in the X-axis direction or long in the Y-axis direction. In the present embodiment, the irradiation region (irradiation region of the illumination system 82) on the light receiving surface of the 12 beam pattern generator 84 has a length in the X-axis direction of Smm and a length in the Y-axis direction of Tmm. It can also be said to be a rectangular area.

Since each ribbon 84b can be controlled independently, the number of square beams generated by the pattern generator 84 is 6000 × 12 = 72,000, and switching (on / off) of 72,000 beams is performed. Is possible. In the present embodiment, 72,000 apertures 58a are formed on the light shielding film 58 of the photoelectric element 54 of the photoelectric capsule 50 so that the 72,000 beams generated by the pattern generator 84 can be individually irradiated. Yes. The number of apertures 58a may not be the same as the number of beams that can be irradiated by the pattern generator 84, for example, and the photoelectric element 54 (light shielding film) including the apertures 58a corresponding to each of 72,000 beams (laser beams). 58) The upper region may be irradiated. That is, it is only necessary that the size of each of the plurality of apertures 58a on the photoelectric element 54 is smaller than the size of the cross section of the corresponding beam. The number of movable reflective elements (ribbons 84b) included in the pattern generator 84 may be different from the number of beams generated by the pattern generator 84. For example, using a type in which an active ribbon whose position is changed by applying a voltage and a bias ribbon that has fallen to the ground and does not change its position are alternately arranged, one of them is provided by a plurality (two) of movable elements (ribbons). The beam may be switched. Further, the number of pattern generators 84 and the number of photoelectric capsules 50 may not be equal.

The projection optical system 86 has an objective

lens including lenses

86a and 86b sequentially arranged on the optical path of the light beam from the pattern generator 84, as shown in FIGS. 11 (A) and 11 (B). A filter 86c is disposed between the lens 86a and the lens 86b. The projection magnification of the projection optical system 86 is about 1/4, for example. Hereinafter, the aperture 58a is assumed to be a rectangle, but may be a square, or may be another shape such as a polygon or an ellipse. Here, each of the

lenses

86a and 86b may be composed of a plurality of lenses. The projection optical system is not limited to a refractive optical system, and may be a reflective optical system or a catadioptric optical system.

In the present embodiment, the projection optical system 86 projects the light from the pattern generator 84 onto the photoelectric element 54 so that a light beam that has passed through at least one of a plurality of (herein, 72,000) apertures 58a is the photoelectric layer 60. Is irradiated. That is, the turned-on beam from the pattern generator 84 is irradiated to the photoelectric layer 60 via the corresponding aperture 58a, and the turned-off beam is not irradiated to the corresponding aperture 58a and the photoelectric layer 60. Note that when the image of the light from the pattern generator forms an image on, for example, the photoelectric layer 60 (the lower surface of the plate member 56 or the vicinity thereof), the projection optical system 86 can also be referred to as an imaging optical system. .

As shown in FIG. 10, the projection optical system 86 is provided with an optical characteristic adjusting device 87 that can adjust the optical characteristics of the projection optical system 86. In this embodiment, the optical characteristic adjusting device 87 can change at least the projection magnification (magnification) in the X-axis direction by moving some of the optical elements constituting the projection optical system 86, for example, the lens 86a. As the optical characteristic adjusting device 87, for example, a device that changes the air pressure in an airtight space formed between a plurality of lenses constituting the projection optical system 86 may be used. Further, as the optical characteristic adjusting device 87, a device that deforms an optical member that constitutes the projection optical system 86, or a device that applies heat distribution to the optical member that constitutes the projection optical system 86 may be used. In FIG. 10, only one light irradiation device 80 in the drawing is shown as having an optical characteristic adjustment device 87, but in reality, all 45 light irradiation devices 80 are optically connected. A characteristic adjusting device 87 is also provided. The 45 optical characteristic adjusting devices 87 are controlled by the control unit 11 based on an instruction from the main control device 110 (see FIG. 18).

It should be noted that an intensity modulation element capable of changing the intensity of at least one of a plurality of beams generated by the pattern generator 84 and applied to the photoelectric layer 60 may be provided inside the projection optical system 86. Changing the intensity of the plurality of beams applied to the photoelectric layer 60 includes making the intensity of some of the plurality of beams zero. Further, the projection optical system 86 may include a phase modulation element, a polarization modulation element, or the like that can change at least one phase or polarization of a plurality of beams irradiated on the photoelectric layer 60.

As is clear from FIG. 11A, in this embodiment, the optical axis AXi of the optical system included in the illumination system 82 and the optical axis of the projection optical system 86 (coincident with the optical axis of the lens 86b as the final optical element) AXo. Is parallel to the Z-axis, but is shifted (offset) by a predetermined distance in the Y-axis direction. The optical axis AXi of the optical system included in the illumination system 82 and the optical axis AXo of the projection optical system may be non-parallel.

FIGS. 14A and 14B show an example of the configuration of the electron beam optical system 70 together with the main body 52 of the corresponding photoelectric capsule 50. Among these, FIG. 14A shows a configuration viewed from the + X direction, and FIG. 14B shows a configuration viewed from the −Y direction. As shown in FIGS. 14A and 14B, the electron beam optical system 70 includes a lens barrel 104 and an objective lens including a pair of

electromagnetic lenses

70a and 70b held by the lens barrel 104, and an electrostatic lens. And a multipole 70c. The objective lens of the electron beam optical system 70 and the electrostatic multipole 70c are beams of electrons (multiple electron beams EB) emitted by photoelectric conversion of the photoelectric element 54 by irradiating the photoelectric element 54 with the plurality of beams LB. Located on the street. The pair of

electromagnetic lenses

70a and 70b are disposed in the vicinity of the upper end portion and the lower end portion in the lens barrel 104, respectively, and are separated from each other in the vertical direction. An electrostatic multipole 70c is disposed between the pair of

electromagnetic lenses

70a and 70b. The electrostatic multipole 70c is disposed in the beam waist portion on the beam path of the electron beam EB that is focused by the objective lens. For this reason, the plurality of beams EB passing through the electrostatic multipole 70c may repel each other due to the Coulomb force acting between them, and the magnification may change.

Therefore, in the present embodiment, the first electrostatic lens 70c ₁ for XY magnification correction and the beam irradiation position control (and irradiation position deviation correction), that is, the projection position adjustment (and projection position deviation correction) of the optical pattern are performed. An electrostatic multipole 70 c having a second electrostatic lens 70 c ₂ is provided inside the electron beam optical system 70. The first electrostatic lens 70c _1, for example as schematically shown in FIG. 15 (A), the reduction magnification in the X-axis direction and the Y-axis direction, fast, and individually corrected. However, the first electrostatic lens 70c _1, as shown in FIG. 15 (B), caused by changes in the total current amount, the magnification change due to Coulomb effect as the correction target, shown in FIG. 15 (C) Such a biased magnification change due to the local Coulomb effect is not subject to correction. Figure 15 assumes adoption of the pattern generation rule magnification change as shown in (C) is to prevent the occurrence as much as possible, the Coulomb effect occurring thereon is corrected by using the first electrostatic lens 70c ₁ .

The second electrostatic lens 70c ₂ corrects (bright pixel among the optical pattern, i.e. the projection position deviation of the cut pattern to be described later) irradiation position shift of the beam caused by various vibrations or the like in a batch. The second electrostatic lens 70c ₂ is deflection control of the beam for performing the following control for the wafer W of the beam during exposure, i.e., it is also used for the irradiation position control of the beam. When correction of the reduction magnification is performed using a portion other than the electron beam optical system 70, such as the projection optical system 86 described above, the deflection control of the electron beam is possible instead of the electrostatic multipole 70c. An electrostatic deflection lens composed of a simple electrostatic lens may be used.

The reduction magnification of the electron beam optical system 70 is, for example, 1/50 in design without performing magnification correction. Other magnifications such as 1/30, 1/20, etc. may be used.

FIG. 16 is a perspective view showing the appearance of 45 electron beam optical systems 70 supported in a suspended state on the base plate 38.

As shown in FIGS. 14A and 14B, an electron beam exit 104a is formed at the exit end of the lens barrel 104. Below the exit 104a portion, a backscattered electron detector 106 is provided. Is arranged. The backscattered electron detector 106 is disposed inside a circular (or rectangular) opening 74a formed in the cooling plate 74 so as to face the above-described outlet 104a. More specifically, the optical axis AXe of the electron beam optical system 70 (corresponding to the central axis of the photoelectric capsule 50 and the optical axis AXo of the projection optical system 86 (see FIG. 11A)) is sandwiched in the X-axis direction. A pair of backscattered electron detection devices 106x ₁ and 106x ₂ are provided on both sides. A pair of backscattered electron detectors 106y ₁ and 106y ₂ are provided on both sides in the Y-axis direction with the optical axis AXe interposed therebetween. Each of the two pairs of backscattered electron detectors 106 includes, for example, a semiconductor detector, and detects a reflected component generated from a detection target mark such as an alignment mark or a reference mark on the wafer, in this case, backscattered electrons. Then, a detection signal corresponding to the detected reflected electrons is sent to the signal processing device 108 (see FIG. 18). The signal processing device 108 performs signal processing after amplifying the detection signals of the plurality of backscattered electron detection devices 106 by an amplifier (not shown), and sends the processing result to the main control device 110 (see FIG. 18). The backscattered electron detector 106 may or may not be provided in a part (at least one) of the 45 electron beam optical systems 70.

The backscattered

electron detectors

106 _x1 , 106 _x2 , 106 _y1 , and 106 _y2 may be fixed to the lens barrel 104 or may be attached to the cooling plate 74.

In the cooling plate 74, 45 openings 74a are formed individually facing the outlets 104a of the lens barrels 104 of the 45 electron beam optical systems 70, and two pairs of backscattered electron detection devices 106 are formed in the openings 74a. Are arranged (see FIG. 2).

As shown in FIGS. 14A and 14B, the base plate 38 is formed with the diaphragm 38b described above on the optical axis AXe. The narrowed portion 38b is formed of a rectangular hole that is long in the X-axis direction and is formed on the inner bottom surface of a circular (or rectangular) concave portion 38a formed in a predetermined depth on the upper surface of the base plate 38. Further, on the optical axis AXe, the centers of the arrangement regions of a large number of apertures 58a provided on the upper side of the photoelectric layer 60 (here, coincide with the central axis of the main body portion 52 of the photoelectric capsule 50) substantially coincide. . As shown in FIG. 2, the diaphragm portion 38 b is formed on the base plate 38 so as to individually face the optical axes AXe of 45 electron beam optical systems 70.

Further, an extraction electrode 112 for accelerating electrons emitted from the photoelectric layer 60 is disposed between the base plate 38 and the photoelectric element 54. Although not shown in FIGS. 14A and 14B, the extraction electrode 112 can be provided around the circular opening 68c of the lid storage plate 68, for example. Of course, the extraction electrode 112 may be provided on a member different from the lid storage plate 68.

In the exposure apparatus 100, the lens barrel 78, the first portion 19a, the second portion 19b, and the stage chamber 10 of the casing 19 are provided with an opening / closing portion for maintenance.

Here, an example of a flow of assembly of the exposure apparatus 100 will be described focusing on a series of flow until the photoelectric capsule manufactured by the photoelectric capsule manufacturer is transported and the lid member is opened by the exposure apparatus manufacturer.

First, in the vacuum chamber 120 of the factory of the photoelectric capsule manufacturer, as shown by the upward white arrow in FIG. 4A, the lid member 64 is moved upward so that the opening 52c is closed. A lid member 64 is brought into contact with the main body 52 of the photoelectric capsule 50. Next, as shown in FIG. 4B, an upward force (pressure) is applied to the lid member 64 using a spring or other biasing member 122 in the vacuum chamber 120. At this time, the O-ring 62 provided on the lower end surface of the main body 52 is completely crushed by the action of pressure. Then, when the inside of the vacuum chamber 120 is opened to the atmosphere with the pressurized pressure applied to the lid member 64, the inside of the photoelectric capsule 50 is in a vacuum, so that the lid member 64 is pressure-bonded to the main body 52 by the atmospheric pressure. Therefore, the pressure applied by the urging member 122 is released. FIG. 4C shows a state in which this pressurization is released. In the state of FIG. 4C, the main body 52 and the lid member 64 are integrated to form the photoelectric capsule 50 (the photoelectric capsule 50 is shielded at atmospheric pressure). As described above, the plurality (at least 45) of the photoelectric capsules 50 are transported to the factory of the exposure apparatus manufacturer while maintaining the state of FIG. Alternatively, an annular groove may be formed on the surface of the lid member 64 facing the main body 52, and the O-ring 62 may be partially embedded in the groove. If the vacuum state of the space inside the photoelectric capsule can be maintained even in the atmospheric space with the lid member 64 in contact with the main body 52, the sealing member such as the O-ring 62 may not be provided.

In the factory of the exposure apparatus manufacturer, 45 photoelectric capsules 50 are transported into a clean room and 45 through-holes already formed in the first plate 36 of the electron beam optical unit 18A assembled to the frame 16. As indicated by a downward arrow in FIG. 5, each of 36 a is inserted from above and assembled to the first plate 36. In this assembled state, the main body 52 of the photoelectric capsule 50 is inserted into the 45 through holes 36a with almost no gap. Further, at this time, the lid storage plate 68 has 45 round holes 68 a of a predetermined depth located directly below the 45 photoelectric capsules 50, respectively, and between the lid member 64 and the upper surface of the lid storage plate 68. It is in a height position where a predetermined gap exists.

Prior to the assembly of the electron beam optical unit 18A to the frame 16, the stage system 14 is assembled, the assembled stage system 14 is carried into the stage chamber 10, and necessary adjustments regarding the stage system 14 are performed. Yes.

After the assembly of the photoelectric capsule 50 with respect to the first plate 36, the lid member 64 is placed in the inside of 45 round holes 68 a having a predetermined depth of the lid storage plate 68 by the vacuum-compatible actuator 66 as shown in FIG. 6. The lid storage plate 68 is driven upward to the position where the part enters.

Next, evacuation of the inside of the first part 19a and the inside of the second part 19b of the housing 19 is performed in parallel (see FIG. 2). In parallel with this, the inside of the stage chamber 10 is evacuated.

At this time, the inside of the first portion 19a of the housing 19 is evacuated until a high vacuum state of the same level as the inside of the photoelectric capsule 50 is obtained, and the inside of the first portion 19a becomes the first vacuum chamber 34 ( (See FIG. 7). At this time, since the atmospheric pressure inside the photoelectric capsule 50 and the atmospheric pressure inside the first portion 19a are balanced, the lid member 64 is separated from the main body portion 52 by its own weight as shown in FIG. 68a is completely stored inside. In the state where the evacuation inside the first portion 19a of the housing 19 is completed, the photoelectric elements 54 included in each of the plurality of photoelectric capsules 50 are arranged in the first vacuum chamber 34 and outside thereof (outside the housing 19). It functions as a partition (vacuum partition) that separates the space. The outside of the first vacuum chamber 34 is atmospheric pressure or slightly positive pressure from atmospheric pressure.

On the other hand, the inside of the second portion 19b of the housing 19 may be evacuated until a high vacuum state of the same level as the first portion 19a is reached, but the degree of vacuum is lower than that of the first portion 19a (the pressure is high). ) Vacuuming to a medium vacuum state may be performed. In the present embodiment, the inside of the first portion 19a and the inside of the second portion 19b are substantially separated by the throttle portion 38b, and thus this is possible. After the evacuation inside the second portion 19b is completed, the inside of the second portion 19a becomes the second vacuum chamber 72. When the inside of the second portion 19b is evacuated to a medium vacuum state, the time required for evacuation can be shortened. The inside of the stage chamber 10 is evacuated to the same level as the inside of the second portion 19b.

After the first portion 19b is evacuated, the lid accommodating plate 68 is driven in the X-axis direction and the Y-axis direction (and the Z-axis direction) by the vacuum actuator 66, and 45 circular shapes formed on the lid accommodating plate 68 are formed. The openings 68c are positioned on the optical axes AXe of the 45 electron beam optical systems 70, respectively. FIG. 3 shows a state in which the circular opening 68c is positioned on the optical axis AXe in this way. Thereafter, necessary adjustment is performed, and the assembly of the electron beam optical unit 18A is completed.

Next, as shown in FIG. 1, an optical unit 18B separately assembled in advance is mounted on the assembled electron beam optical unit 18A (first plate 36). At this time, the optical unit 18B is arranged so that each of the 45 light irradiation devices 80 inside the lens barrel 78 is arranged corresponding to each of the 45 photoelectric elements 54, that is, the light of the projection optical system 86. It is mounted in a state where the axis AXo substantially coincides with the optical axis AXe of the electron beam optical system 70. Then, necessary adjustments regarding the optical unit 18B and necessary adjustments between the electron beam optical unit 18A and the optical unit 18B, and mechanical connection and electrical circuit wiring between the optical unit 18B and the electron beam optical unit 18A. The connection, the piping connection of the atmospheric pressure circuit, and the like are performed, and the assembly of the exposure apparatus 100 is completed.

The necessary adjustment of each part described above includes adjustment for achieving optical accuracy for various optical systems, adjustment for achieving mechanical accuracy for various mechanical systems, and electrical accuracy for various electrical systems. Adjustments to achieve are included.

As is apparent from the above description, in the exposure apparatus 100 according to the present embodiment, as shown in FIG. 17, the length Smm in the X-axis direction and the Y-axis direction on the light receiving surface of the pattern generator 84 at the time of exposure. A beam is irradiated inside a rectangular region having a length of Tmm, and by this irradiation, light from the pattern generator 84 is irradiated to the photoelectric element 54 by the projection optical system 86 having a reduction magnification of 1/4, and further generated by this irradiation. The irradiated electron beam is irradiated onto a rectangular area (exposure field) on an image plane (a wafer surface aligned with the image plane) via an electron beam optical system 70 having a reduction ratio of 1/50. That is, the exposure apparatus 100 of the present embodiment includes a light irradiation device 80 (projection optical system 86), a photoelectric element 54 corresponding to the light irradiation device 80, and an electron beam optical system 70 corresponding thereto, and a reduction magnification of 1 / 200 straight tube type multi-beam optical system 200 (see FIG. 18) is configured, and this multi-beam optical system 200 has 45 in the matrix arrangement described above in the XY plane. Therefore, the optical system of the exposure apparatus 100 of the present embodiment is a multi-column electron beam optical system having 45 reduction optical systems with a reduction magnification of 1/200.

Further, in the exposure apparatus 100, a 300 mm wafer having a diameter of 300 mm is an exposure object, and 45 electron beam optical systems 70 are arranged so as to face the wafer. Therefore, an arrangement interval of the optical axes AXe of the electron beam optical system 70 is an example. 43 mm. In this way, the exposure area of one electron beam optical system 70 is a rectangular area of 43 mm × 43 mm at the maximum, so that the movement strokes of the wafer stage WST in the X-axis direction and the Y-axis direction are as described above. A length of 50 mm is sufficient. The number of electron beam optical systems 70 is not limited to 45, and can be determined based on the diameter of the wafer, the stroke of wafer stage WST, and the like.

FIG. 18 is a block diagram showing the input / output relationship of main controller 110 that mainly constitutes the control system of exposure apparatus 100. Main controller 110 includes a microcomputer and the like, and comprehensively controls each component of exposure apparatus 100 including each component shown in FIG. In FIG. 18, the light irradiation device 80 connected to the control unit 11 includes a laser diode 88, an AO deflector 90, a diffractive optical element 92, and a laser diode 88 controlled by the control unit 11 based on an instruction from the main control device 110. An illuminance distribution adjusting element 94 is included. In addition, the electron beam optical system 70 connected to the control unit 11 is based on an instruction from the main control device 110, and a pair of

electromagnetic lenses

70 a and 70 b and an electrostatic multipole 70 c (the first multi-pole 70 c (first) controlled by the control unit 11. electrostatic lens 70c comprises _first and second electrostatic lens 70c _2). In FIG. 18, reference numeral 500 includes the multi-beam optical system 200, the control unit 11, the backscattered

electron detection devices

106 _x1 , 106 _x2 , 106 _y1 , 106 _y2, and the signal processing device 108. The exposure unit comprised is shown. In the exposure apparatus 100, 45 units of exposure units 500 are provided.

By the way, the exposure apparatus 100 employs a rectangular (rectangular) exposure field (hereinafter abbreviated as a rectangular field as appropriate) RF for the following reasons.

FIG. 19 shows a square exposure field (hereinafter abbreviated as a square field) SF and a rectangular field RF in a circle indicating an effective area (aberration effective area) of the diameter D of the electron beam optical system. . As can be seen from FIG. 19, the square field SF is good for the maximum use of the effective area of the electron beam optical system. However, in the case of the square field SF, as shown in FIG. 19, the field width is lost about 30% (1 / √2). For example, when the length of the short side is t (= T / 50) mm and the length of the long side is s (= S / 50) mm, the rectangular field RF has an aspect ratio of t / s = 11/60. The effective area is almost the field width. This is a great advantage for multi-columns. In addition, there is an advantage that the mark detection sensitivity when detecting the alignment mark is improved. Regardless of the shape of the field, the total amount of electrons irradiated in the field is the same, so the rectangular field has a higher current density than the square field, so even if the mark is placed in a smaller area on the wafer. Detection is possible with sufficient detection sensitivity. The rectangular field is easier to manage aberration than the square field. The practical aspect ratio t / s is 1/12 to 1/4.

In FIG. 19, both the exposure fields of the square field SF and the rectangular field RF are set to include the optical axis AXe of the electron beam optical system. However, the present invention is not limited to this, and the exposure field may be set within the aberration effective region so as not to include the optical axis AXe. Further, the exposure field may be set to a shape other than a rectangle (including a square), for example, an arc shape.

Next, dose control performed during exposure of the wafer W by the exposure apparatus 100 according to the present embodiment will be described.

Irradiance unevenness in the exposure field is controlled by the main controller 110 using the illuminance distribution adjusting element 94 during exposure, which will be described later, to perform the above-described variable control of the polarization state by controlling the applied voltage for each crystal. By controlling the light intensity (illuminance) for each corresponding region (region on the light receiving surface of the pattern generator 84 corresponding to each crystal), as a result, in-plane on the electron emission surface of the photoelectric layer 60 The illuminance distribution and the corresponding illuminance distribution in the exposure field RF on the wafer surface are adjusted. That is, the intensity of each of the plurality of electron beams applied to the exposure field RF is adjusted appropriately. In the exposure apparatus 100 of the present embodiment, since the pattern generator 84 is configured by GLV, the pattern generator 84 itself can generate a halftone. The main controller 110 adjusts the intensity of each light beam applied to the photoelectric layer 60 to adjust the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60 and the corresponding exposure field on the wafer surface. Adjustment of the illuminance distribution in the RF, that is, dose control can also be performed. Of course, the main controller 110 may adjust the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60 by using the illuminance distribution adjusting element 94 and the pattern generator 84 in combination.

As a premise for adjusting the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60, the intensity of a plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion (electron beam illuminance, beam The intensity of the plurality of beams generated by the pattern generator 84 and applied to the photoelectric layer 60 is adjusted so that the (current amount) is substantially the same. The adjustment of the beam intensity may be performed in the illumination system 82, the pattern generator 84, or the projection optical system 86. However, the plurality of electron beams generated by the photoelectric conversion from the electron emission surface of the photoelectric layer 60 (the illuminance of the electron beam and the amount of beam current) are different from each other for at least some of the beams. The beam intensity may be adjusted.

The resist layer formed on the wafer is not affected only by the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60, but other factors such as electron forward scattering, back scattering, or fogging. Influenced by.

Here, forward scattering means a phenomenon in which electrons incident on the resist layer on the wafer surface are scattered in the resist layer before reaching the wafer surface, and backscattering means that the wafer passes through the resist layer. It means a phenomenon in which electrons that reach the surface are scattered on the wafer surface or inside thereof, enter the resist layer again, and are scattered around. In addition, fogging refers to a phenomenon in which reflected electrons from the surface of the resist layer re-reflect on the bottom surface of the cooling plate 74, for example, and add a dose to the surroundings.

As is apparent from the above description, the range affected by forward scattering is narrower than that of backscattering and fogging. Therefore, the exposure apparatus 100 employs different correction methods for forward scattering, backscattering and fogging. ing.

In PEC (Proximity Effect Correction) for reducing the influence of the forward scattering component, the main controller 110 expects the influence of the forward scattering component, and the pattern generator 84 (and / or the illuminance distribution adjustment element via the control unit 11). 94) is used to adjust the in-plane illuminance distribution.

On the other hand, in the PEC for reducing the influence of the backscattering component and the FEC (Fogging Effect Correction) for reducing the influence of fogging, the main control device 110 sets the illuminance distribution adjusting element 94 via the control unit 11. Use to adjust the in-plane illuminance distribution at a certain spatial frequency.

Incidentally, the exposure apparatus 100 according to the present embodiment is used, for example, in complementary lithography. In this case, for example, a wafer on which an L / S pattern is formed by using double patterning or the like in immersion exposure using an ArF excimer laser light source is exposed, and a cut pattern for cutting the line pattern is formed. Used for. In the exposure apparatus 100, it is possible to form a cut pattern corresponding to each of 72,000 apertures 58a formed on the light shielding film 58 of the photoelectric element 54.

In the present embodiment, the flow of processing for the wafer is as follows.

First, an unexposed wafer W coated with an electron beam resist is placed on the wafer stage WST in the stage chamber 10 and is attracted by an electrostatic chuck.

From each electron beam optical system 70 to at least one alignment mark formed on a scribe line (street line) corresponding to each of, for example, 45 shot regions formed on wafer W on wafer stage WST. Irradiated with an electron beam, reflected electrons from at least one alignment mark are detected by at least one of the reflected

electron detectors

106 _x1 , 106 _x2 , 106 _y1 and 106 _y2 , and all-point alignment measurement of the wafer W ₁ is performed. We, this based on the results of all points alignment measurement, the plurality of shot areas on the wafer W _1, exposure using a 45 exposure unit 500 (multi-beam optical system 200) is started. For example, in the case of complementary lithography, a plurality of beams (electron beams) emitted from each multi-beam optical system 200 are used to form a cut pattern for the L / S pattern formed on the wafer W with the X-axis direction as a periodic direction. When forming, the irradiation timing (ON / OFF) of each beam is controlled while scanning the wafer W (wafer stage WST) in the Y-axis direction. Note that the alignment mark formed corresponding to a part of the shot area of the wafer W is detected without performing all-point alignment measurement, and exposure of 45 shot areas is performed based on the result. good. In the present embodiment, the number of exposure units 500 and the number of shot areas are the same, but they may be different. For example, the number of exposure units 500 may be smaller than the number of shot areas.

Here, an exposure sequence using the pattern generator 84 will be described. Here, a large number of 10-nm square pixel regions (coincident with the irradiation region of the beam through the aperture 58a) adjacent to each other in a certain region on the wafer are virtually set, and all the pixels are set. The case of exposing the light will be described. Here, it is assumed that there are 12 rows of ribbons, A, B, C,.

Explaining by focusing on the ribbon column A, exposure using the ribbon column A is started on a continuous 6000 pixel area of a certain row (referred to as the Kth row) arranged in the X-axis direction on the wafer. It is assumed that the beam reflected by the ribbon row A is at the home position at the start of exposure. Then, the exposure to the same 6000 pixel area is continued while the beam is deflected in the + Y direction (or −Y direction) following the scan in the + Y direction (or −Y direction) of the wafer W from the start of exposure. For example, when the exposure of the 6000 pixel region is completed at time Ta [s], wafer stage WST advances at speed V [nm / s], for example, Ta × V [nm]. Here, for convenience, Ta × V = 96 [nm].

Subsequently, the beam is returned to the home position while the wafer stage WST is scanning 24 nm in the + Y direction at the speed V. At this time, the beam is turned off so that the resist on the wafer is not actually exposed. The beam is turned off using the AO deflector 90.

At this time, since wafer stage WST has advanced 120 nm in the + Y direction from the exposure start time, the continuous 6000 pixel area in the (K + 12) th row is the same position as the 6000 pixel area in the Kth row at the exposure start time. It is in.

Therefore, similarly, a continuous 6000 pixel area in the (K + 12) th row is exposed while deflecting and following the beam to wafer stage WST.

Actually, in parallel with the exposure of the 6000 pixel area in the Kth row, the 6000 pixels in the (K + 1) th to (K + 11) th rows are exposed by the ribbon columns B, C,. The

In this way, exposure (scan exposure) while scanning the wafer stage WST in the Y-axis direction is possible for a region having a width of 60 μm in the X-axis direction on the wafer, and the wafer stage WST is 60 μm in the X-axis direction. If the same scan exposure is performed by stepping in the direction, it is possible to expose a region having a width of 60 μm adjacent in the X-axis direction. Therefore, by alternately repeating the scan exposure and the stepping in the X-axis direction of the wafer stage, one exposure unit 500 can perform exposure of one shot area on the wafer. Actually, since different shot areas on the wafer can be exposed in parallel using 45 exposure units 500, the entire surface of the wafer can be exposed.

The exposure apparatus 100 is used for complementary lithography, and is used to form a cut pattern for an L / S pattern formed on the wafer W, for example, having an X-axis direction as a periodic direction. A cut pattern can be formed by turning on a beam reflected by an arbitrary ribbon 84b among the ribbons 84b. In this case, 72000 beams may or may not be turned on simultaneously.

In the exposure apparatus 100 according to the present embodiment, the stage drive system 26 is controlled by the main controller 110 based on the measurement value of the position measurement system 28 during the scanning exposure of the wafer W based on the exposure sequence described above. The light irradiation device 80 and the electron beam optical system 70 are controlled via the control unit 11 of each exposure unit 500. At this time, based on an instruction from the main controller 110, the control unit 11 performs the above-described dose control as necessary.

Incidentally, the dose control described above is a dose control performed by controlling the illuminance distribution adjusting element 94 or the pattern generator 84, or the illuminance distribution adjusting element 94 and the pattern generator 84, and thus can be said to be dynamic dose control. .

However, the exposure apparatus 100 is not limited to this, and the following dose control can also be employed.

For example, as shown in FIG. 20A, the cut pattern (resist pattern) CP that should be square (or rectangular) on the wafer is, for example, 4 due to blur (blur) and / or resist blur caused by the optical system. In some cases, the corners are rounded to form a cut pattern CP ′. In the present embodiment, as shown in FIG. 20B, the light beam is transmitted through the non-rectangular aperture 58a ′ provided with the auxiliary patterns 58c at the four corners of the aperture 58a formed in the light shielding film 58. And an electron beam generated by photoelectric conversion is irradiated onto the wafer via the electron beam optical system 70 to form an irradiation region of the electron beam having a shape different from that of the non-rectangular aperture 58a ′ on the wafer. You may do it. In this case, the shape of the electron beam irradiation region and the shape of the cut pattern CP to be formed on the wafer may be the same or different. For example, when the influence of the resist blur can be almost ignored, the shape of the aperture 58a ′ is set so that the shape of the electron beam irradiation region is substantially the same as the shape of the desired cut pattern CP (for example, rectangular or square). Just decide. The use of the aperture 58a 'in this case may not be considered as dose control.

Here, in the aperture 58a ', it is not necessary to provide the auxiliary pattern 58c at all four corners of the rectangular aperture 58a, and the auxiliary pattern 58c may be provided only at least at a part of the four corners of the aperture 58a. Further, the auxiliary patterns 58c may be provided at all four corners of the rectangular aperture 58a only at a part of the plurality of apertures 58a 'formed on the light shielding film 58. Further, a part of the plurality of apertures formed in the light shielding film 58 may be the aperture 58a ', and the rest may be the aperture 58a. That is, it is not necessary to make all the shapes of the plurality of apertures 58a 'formed in the light shielding film 58 the same. The shape, size, etc. of the aperture may be designed based on the simulation result, but is optimized based on the characteristics of the electron beam optical system 70 based on the actual exposure result, for example. It is desirable. In any case, the shape of each aperture is determined so as to suppress rounding of the corner of the irradiation area on the wafer (target). Note that the influence of the forward scattering component can also be reduced by the aperture shape.

For example, when the blur caused by the optical system can be almost ignored, the shape of the aperture 58a 'and the shape of the electron beam irradiation region may be the same.

The exposure apparatus 100 has a plurality of electron beam optical systems 70, for example, 45, but the 45 electron beam optical systems 70 are manufactured through the same manufacturing process so as to satisfy the same specifications. Therefore, for example, as schematically shown in FIG. 21A, inherent distortion (distortion aberration) in which the exposure field is distorted may occur in common in the 45 electron beam optical systems 70. The distortion common to the plurality of electron beam optical systems 70 cancels the distortion by arranging the apertures 58a on the light shielding film 58 located on the photoelectric layer 60, as schematically shown in FIG. It may be corrected by arranging in such a manner that it is reduced or reduced. Note that the circle in FIG. 21A indicates the aberration effective region of the electron beam optical system 70.

In FIG. 21B, for easy understanding, each aperture 58a is shown as a parallelogram instead of a rectangle, but in reality, the aperture 58a on the light shielding film 58 is formed as a rectangle or a square. Is done. This example shows a case where the barrel distortion inherent in the electron beam optical system 70 is canceled or reduced by arranging a plurality of apertures 58a on the photoelectric layer 60 along the pincushion distortion shape. . The distortion of the electron beam optical system 70 is not limited to the barrel distortion. For example, when the distortion of the electron beam optical system 70 is a pincushion distortion, a plurality of apertures 58a are arranged so as to cancel or reduce the influence. May be arranged in a barrel-shaped distortion shape. Further, the positions of the plurality of light beams from the projection optical system 86 may or may not be adjusted according to the arrangement of the apertures 58a.

As described above, the exposure apparatus 100 according to the present embodiment includes the multi-beam optical system 200, the control unit 11, the backscattered electron detectors _106x1 , _106x2 , _106y1 , _106y2, and the signal processing device 108. , 45 exposure units 500 are provided (see FIG. 18). The multi-beam optical system 200 includes a light irradiation device 80 and an electron beam optical system 70. The light irradiation device 80 includes a pattern generator 84 capable of providing a plurality of individually controllable light beams, an illumination system 82 for irradiating the pattern generator 84 with illumination light, and a plurality of light beams from the pattern generator 84 as photoelectric elements. The electron beam optical system 70 irradiates the wafer W with a plurality of light beams emitted from the photoelectric element 54 by irradiating the photoelectric element 54 with a plurality of light beams. Irradiate. Therefore, according to the exposure apparatus 100, since there is no blanking / aperture, the source of complex distortion due to charge-up and magnetization is essentially eliminated, and there are fewer wasted electrons (reflected electrons) that do not contribute to the exposure of the target. It becomes possible to eliminate long-term unstable factors.

In the exposure apparatus 100 according to the present embodiment, during actual wafer exposure, the main controller 110 scans (moves) the wafer stage WST holding the wafer W in the Y-axis direction via the stage drive system 26. Control. In parallel with this, the main controller 110, for each of the m (for example, 45) multi-beam optical systems 200, passes through the n (for example, 72,000) apertures 58 a of the photoelectric element 54. The irradiation state (ON state and OFF state) of the beam is changed for each aperture 58a, and the illumination distribution adjusting element 94 is used for each divided region corresponding to each crystal, or the pattern generator 84 is used for each beam. Adjust the intensity of the light beam.

Further, in exposure apparatus 100, the first electrostatic lens 70c ₁ of the electrostatic multipole 70c, caused by changes in the total current amount, reduction in the X-axis direction and the Y-axis direction due to the Coulomb effect magnification (changes in) , Fast, and individually correct. Further, in exposure apparatus 100, the second electrostatic lens 70c _2, correction (light pixels of the optical pattern, i.e. the projection position deviation of the cut pattern to be described later) irradiation position shift of the beam caused by various vibrations or the like in a batch To do.

Thereby, for example, a desired line of a fine line-and-space pattern in which the X-axis direction is formed in advance in each of, for example, 45 shot regions on the wafer by double patterning using an ArF immersion exposure apparatus or the like. A cut pattern can be formed at a desired position above, and exposure with high accuracy and high throughput is possible.

Therefore, when the above-described complementary lithography is performed using the exposure apparatus 100 according to the present embodiment and the L / S pattern is cut, each multi-beam optical system 200 uses any one of the plurality of apertures 58a. Even if the beam passing through the aperture 58a is in the on state, in other words, regardless of the combination of the beams in the on state, for example, X formed in advance in each of the 45 shot regions on the wafer It becomes possible to form a cut pattern at a desired position on a desired line among fine line and space patterns whose periodic direction is the axial direction.

Further, in the exposure apparatus 100 according to the present embodiment, since the photoelectric capsule 50 described above is employed, the photoelectric element 54 can be easily transported, and the photoelectric element 54 can be moved to the housing 19 of the electron beam optical unit 18A. Easy to assemble. Further, by simply evacuating the inside of the first vacuum chamber 34, the lid members 64 of the plurality of photoelectric capsules 50 are separated from the main body 52 by their own weight, and simultaneously by the lid storage plate 68 driven by the vacuum-compatible actuator 66. Since it can be received and stored in the round hole 68a, the lid members 64 of the plurality of photoelectric capsules 50 can be removed in a short time. Further, during maintenance of the electron beam optical unit 18A, a plurality of lid members 64 individually housed in the plurality of round holes 68a of the lid housing plate 68 are simultaneously attached to the main body portion of the corresponding photoelectric capsule 50. In a state where the first vacuum chamber 34 is released to the atmosphere while being pressed against the main body 52, each lid member 64 is moved to the corresponding main body by the pressure difference between the inside (vacuum) and the outside (atmospheric pressure) of the photoelectric capsule 50. It can be integrated with the part 52. Thereby, it can prevent reliably that the photoelectric layer 60 touches air. Further, the main body 52 can be released from the first plate 36 that releasably supports the main body 52 in a state in which the lid member 64 is attached to the main body 52.

In the exposure apparatus 100 according to the above embodiment, a pattern generator 184 having 13 ribbon rows 85 shown in FIG. 22 is used instead of the pattern generator 84 having 12 ribbon rows 85 shown in FIG. Also good. In the pattern generator 184, the ribbon row located at the top in FIG. 22 (indicated as 85a for identification in FIG. 22) is one of the 12 commonly used ribbon rows (main ribbon row) 85. This is a backup ribbon row that is used in place of the ribbon row 85 in which the failure occurs when a failure occurs. A plurality of backup ribbon rows 85a may be provided.

In the exposure apparatus 100, the light receiving surface of the pattern generator 84 is substantially divided into 2 × 12 = 24 partial areas by the illuminance distribution adjusting element 94 (see FIG. 13). A ribbon line for backup may be provided.

In the description so far, each ribbon 84b of the pattern generator corresponds to the aperture 58a of the photoelectric element 54 in a 1: 1 ratio, that is, each ribbon 84b and the electron beam irradiated onto the wafer are 1: 1. Corresponding. However, the present invention is not limited to this, and the photoelectric element 54 is irradiated with a light beam from one ribbon row in the main ribbon row 85, for example, one ribbon 84b included in a ribbon row adjacent to the backup ribbon row 85a. A target region (referred to as a first target region) on the wafer that is the target is irradiated with the electron beam generated by the above-described process. For example, one ribbon 84b included in the ribbon row 85a or one of the main ribbon rows 85 An electron beam generated by irradiating the photoelectric element 54 with a light beam from one ribbon 84b included in another ribbon row may be configured to be able to irradiate the first target region on the wafer. In other words, the electron beam generated by the photoelectric element 54 resulting from the irradiation of the light beams from the two ribbons 84b included in different ribbon rows may be superimposed on the same target area on the wafer. Thereby, for example, the dose amount of the target region may be in a desired state.

In addition, instead of the pattern generator 84 shown in FIG. 13, as shown in FIG. 23A, the width of the ribbon 84b (arrangement pitch of the ribbon 84b) is less than one time with respect to the main ribbon row 85. It is also possible to use a pattern generator to which a correction ribbon row 85b arranged by shifting the distance is added. The correction ribbon row 85b shown in FIG. 23A is a half of the width of the ribbon 84b (as shown in FIG. 23B, which is an enlarged view of the vicinity of the circle B in FIG. 23A). The ribbons 84b are arranged so as to be shifted by half (1 μm) of the arrangement pitch of the ribbons 84b. Using this correction ribbon row 85b, fine dose adjustment such as PEC (Proximity Effect 実施 Correction) may be performed. Although it is possible to create a halftone with the GLV itself, it is effective when it is desired to further correct by pixel shifting. In addition to the main ribbon row 85, the pattern generator may have a backup ribbon row 85a and a correction ribbon row 85b.

In the above embodiment, the case where the pattern generator 84 is configured by GLV has been exemplified. However, the present invention is not limited to this, and the pattern generator 84 may be a reflective liquid crystal display element or a digital micromirror device (Digital Micromirror Device). Alternatively, a reflective spatial light modulator having a plurality of movable reflective elements such as PLV (Planer Light Light Valve) may be used. Alternatively, depending on the configuration of the optical system inside the light irradiation device 80, the pattern generator may be configured by various transmissive spatial light modulators. The pattern generator 84 is not limited to a spatial light modulator as long as it can provide a plurality of individually controllable light beams. In addition to turning on and off the beam, the intensity can be adjusted and the size can be changed. A pattern generator can be used. The pattern generator 84 does not necessarily need to be able to control beams (on / off, intensity adjustment, size change, etc.) for individual light beams, but only for some beams, or a plurality of It may be possible for each beam.

Therefore, various configurations of the optical unit corresponding to the optical unit 18B of the above embodiment can be considered. FIG. 24 shows configuration examples of various types of optical units. The optical unit shown in FIG. 24A can be called an L-type reflection type, and includes an illumination system unit IU including a plurality of illumination systems arranged two-dimensionally in a predetermined positional relationship on the XZ plane, and an XY plane. A plurality of pattern generators 84 two-dimensionally arranged on one surface of the base BS inclined at 45 degrees with respect to a plurality of illumination systems individually, and a plurality of pattern generators 84 and corresponding photoelectric elements individually And an optical unit IMU including a plurality of projection optical systems arranged two-dimensionally on the XY plane in a positional relationship. Although not shown, the optical axes of the plurality of projection optical systems coincide with the optical axes of the corresponding electron beam optical systems. In this case, the pattern generator 84 is formed of a reflective spatial light modulator as in the above embodiment. This L-type reflection type has an advantage that the pattern generator can be easily accessed, and the restriction on the size of the light receiving surface of the pattern generator is gentler than that of the above-described embodiment.

The optical unit shown in FIG. 24B can be referred to as a U-type reflection type, and includes an illumination system unit IU including a plurality of illumination systems two-dimensionally arranged in a predetermined positional relationship on the XY plane, and an XY plane. A plurality of reflective spatial light modulators 84 ₁ arranged two-dimensionally on one surface of the base BS ₁ inclined at −45 degrees with respect to the plurality of illumination systems individually, and 45 with respect to the XY plane. A plurality of reflective spatial light modulators 84 ₂ that are two-dimensionally arranged on one surface of the base BS ₂ tilted at a degree in a positional relationship corresponding to the plurality of spatial light modulators 84 ₁ , a plurality of spatial light modulators 84 _2, and And an optical unit IMU including a plurality of projection optical systems that are two-dimensionally arranged on the XY plane in a positional relationship individually corresponding to corresponding photoelectric elements. Although not shown, the optical axes of the plurality of projection optical systems coincide with the optical axes of the corresponding electron beam optical systems. In this case, for example, it shall be used one reflective spatial light modulator 84 ₂ as a pattern generator, and the other of the spatial light modulator 84 _1, the illuminance distribution with a resolution equal to or more than the illuminance distribution adjusting element 94 described above It can be used as an adjusting device.

The optical unit shown in FIG. 24C can be called a straight tube transmission type, and an optical system (light irradiation device) in which an illumination system, a pattern generator 84, and a projection optical system are arranged on the same optical axis. 80A) are two-dimensionally arranged in the same housing (lens barrel) 78 in a predetermined positional relationship corresponding to a plurality of photoelectric elements. The optical axes of the plurality of light irradiation devices 80A coincide with the optical axes of the corresponding electron beam optical systems. In this straight tube transmissive type, the pattern generator 84 needs to use a transmissive spatial light modulator such as a transmissive liquid crystal display element. The straight tube transmission type is easy to guarantee the accuracy for each axis, the lens barrel size is compact, and it can handle both of the two methods described later with reference to FIGS. 25 (A) and 25 (B). There is merit that there is.

FIG. 24D shows a simplified optical unit of the same type as the optical unit 18B employed in the exposure apparatus 100 of the above embodiment. The optical unit shown in FIG. 24D can be called a straight tube reflection type, and has the same merit as the straight tube transmission type.

In the above-described embodiment, the photoelectric layer 60 is irradiated with light through the aperture 58a, but the aperture may not be used. For example, as shown in FIG. 25A, an optical pattern image formed by a pattern generator is projected onto a photoelectric element, further converted into an electronic image by the photoelectric element, and reduced to form an image on the wafer surface. May be.

In the above-described embodiment, as shown in FIG. 25B, the photoelectric layer is irradiated with light through a plurality of apertures. By using the aperture in this way, a light beam having a desired cross-sectional shape can be incident on the photoelectric layer without being affected by the aberration of the projection optical system between the pattern generator and the photoelectric element. Note that the aperture and the photoelectric layer may be integrally formed as in the above-described embodiment, or may be disposed to face each other with a predetermined clearance (gap, gap).

In the above embodiment, the case where the transparent plate member 56 that also serves as the vacuum partition, the light shielding film 58 formed with the aperture 58a, and the photoelectric layer 60 are integrated is described. However, the vacuum partition, the light shielding film (aperture film), and the like. ) And the photoelectric layer can be arranged in various ways.

In the above-described embodiment, the case where the extraction electrode 112 is provided around the circular opening 68c of the lid storage plate 68 is illustrated. However, instead of or in addition to this, the position of the electron beam is measured on the lid storage plate 68. You may provide at least one of the measurement member to perform, and the sensor which detects an electron beam. The former is a combination of a reflective surface with an aperture and a detector that detects reflected electrons from the reflective surface, or a reflective surface with a mark formed on the surface and the mark. A combination with a detection device for detecting reflected electrons to be used can be used.

<< Second Embodiment >>
FIG. 26 schematically shows a configuration of an exposure apparatus 1000 according to the second embodiment. Here, the same reference numerals are used for the same or equivalent components as those of the exposure apparatus 100 according to the first embodiment described above, and the description thereof is omitted.

In the exposure apparatus 1000, in the exposure apparatus 100 according to the first embodiment described above, the through hole 36 a of the first plate 36 into which the main body portion 52 of the photoelectric capsule 50 is inserted defines the first vacuum chamber 34. The structure of the first portion 19a of the casing 19 in which the first vacuum chamber 34 is formed and the point that the vacuum partition wall 132 made of quartz glass or the like is airtightly sealed with respect to the outside are described above. This is different from the exposure apparatus 100 according to the embodiment. Hereinafter, the difference will be mainly described.

FIG. 27 shows an internal configuration of the housing 19 corresponding to one electron beam optical system 70 of the exposure apparatus 1000 according to the second embodiment. As shown in FIG. 27, a photoelectric element 136 is disposed below the vacuum partition wall 132 by a predetermined distance. As shown in FIG. 28A, the photoelectric element 136 is arranged in the same order as the photoelectric element 54 described above, and is a base material made of quartz (S _i O ₂ ) integrally formed by the same method. 134, a light shielding film 58 and a photoelectric layer 60 are provided. The light shielding film 58 of the photoelectric element 136 is formed with at least 72,000 apertures 58a in the same arrangement as described above.

27, the extraction electrode 112 is disposed below the photoelectric element 136 inside the first vacuum chamber 34.

In the exposure apparatus 1000, since the photoelectric capsule 50 is not used, the lid storage plate 68 and the vacuum-compatible actuator 66 are not provided in the first vacuum chamber 34 (see FIGS. 26 and 27).

The electron beam optical unit 18A according to the second embodiment includes a base plate 38, and the configuration below it (including the electron beam optical system 70 inside the second vacuum chamber 72) is the first embodiment described above. This is the same as the exposure apparatus 100 according to FIG. The configuration other than the electron beam optical unit 18A is the same as that of the exposure apparatus 100 described above.

The exposure apparatus 1000 configured as described above can obtain the same effects as those of the exposure apparatus 100 according to the first embodiment described above, and is provided with the photoelectric element 136 separately from the vacuum partition wall 132. You may have the following additional functions.

That is, when the diameter of the lens barrel is reduced in order to increase the number of electron beam optical systems, the curvature of field component of the electron beam optical system becomes remarkable. For example, when the electron beam optical system has a field curvature as schematically shown in FIG. 29 as its aberration, as shown schematically in FIG. 29, the photoelectric layer 60 (correctly, the entire photoelectric element 136). Is bent so that a curve having a phase opposite to that of the curvature component of the image plane is generated in the photoelectric layer 60, that is, the electron emission surface of the photoelectric layer 60 is bent (made non-planar). Thereby, at least a part of the curvature of field of the electron beam optical system 70 is compensated, and displacement, defocusing, etc. of the electron beam image caused by the curvature of field are suppressed. Note that the amount of curvature of the electron emission surface of the photoelectric layer 60 may be variable. For example, the amount of curvature of the electron emission surface may be changed in accordance with a change in optical characteristics (aberration, for example, field curvature) of the electron beam optical system 70. Therefore, the amount of curvature of the electron emission surface may be made different among the plurality of photoelectric elements 136 according to the optical characteristics of the corresponding electron beam optical system. FIG. 29 shows an example in which a convex curvature is generated in the + Z direction (toward the projection optical system 86) in the photoelectric layer 60. This is because the convex curvature of field in the −Z direction is generated. This is because it is assumed that the electron beam optical system has the aberration, so that the photoelectric layer 60 is curved to cancel or reduce the influence of the curvature of field. Therefore, if the electron beam optical system has a convex curvature of field in the + Z direction as its aberration, it is necessary to cause the convex curvature in the −Z direction in the photoelectric layer 60.

Note that, in the exposure apparatus 1000 according to the second embodiment, a rectangular exposure field that is long in the X-axis direction is adopted as in the exposure apparatus 100 described above. As described above, even in one-direction bending (bending around one axis, that is, bending in the XZ section that curves in the X-axis direction), the effect is high. Of course, the photoelectric element 136 (photoelectric layer 60) is not limited to bending in one direction, and may be three-dimensionally deformed, for example, by bending the four corners downward. By changing how the photoelectric element 136 is deformed, it is possible to effectively suppress displacement, deformation, and the like of the optical pattern image due to spherical aberration. When the electron emission surface of the photoelectric layer 60 is curved, the position of the electron emission surface in the direction of the optical axis AXe of the electron beam optical system 70 is changed between a part of the electron emission surface (for example, the central portion) and the other portion (for example, the peripheral portion). It will be different from each other.

It should be noted that the thickness of the photoelectric layer 60 may be distributed so that the position of the part of the electron emission surface (for example, the central part) and the other part (for example, the peripheral part) in the direction of the optical axis AXe are different. Also, as in the first embodiment, when the photoelectric element also serves as a vacuum partition, the electron emission surface of the photoelectric layer 60 may be curved (non-planar).

In addition, when using an aperture-integrated photoelectric element in which an aperture such as the photoelectric element 136 is provided integrally with the photoelectric layer, an actuator that can drive the aperture-integrated photoelectric element in the XY plane is provided. Also good. In this case, for example, as an aperture-integrated photoelectric element, as shown in FIG. 30, a multi-pitch type in which rows of apertures 58a with pitch a and rows of apertures 58b with pitch b are formed every other row. The aperture integrated photoelectric element 136a may be used. However, in this case, a zoom function for changing the projection magnification (magnification) in the X-axis direction is also used by using the optical characteristic adjusting device 87 described above. In such a case, as shown in FIG. 31A, from the state of irradiating the beam to the column of apertures 58a of the aperture-integrated photoelectric element 136a, the X of the projection optical system 86 is used by using the optical characteristic adjusting device 87. The magnification in the axial direction is enlarged, and as indicated by a double-headed arrow in FIG. 31 (B), a plurality of beams are expanded in the X-axis direction as a whole, and then indicated by a white arrow in FIG. 31 (C). As described above, by driving the aperture-integrated photoelectric element 136a in the + Y direction, it becomes possible to irradiate the array of apertures 58b with the beam. This makes it possible to form a cut pattern for cutting line patterns having different pitches. However, depending on the size and shape of the beam, even if the zoom function of the projection optical system 86 is not necessarily used, only the aperture-integrated photoelectric element 136a is driven, and the beam is arranged in a row of apertures 58a with a pitch a and pitch b. It is possible to irradiate by switching to the row of apertures 58b. In short, in any state before and after the switching, each of the plurality of beams (laser beams) may be irradiated to a region on the photoelectric element 136a including the

corresponding aperture

58a or 58b. That is, the size of each of the plurality of

apertures

58a or 58b on the photoelectric element 136a may be smaller than the size of the cross section of the corresponding beam.

Note that three or more types of aperture rows having different pitches are formed on the light-shielding film 58 of the photoelectric element 136, and exposure is performed in the same procedure as described above, thereby corresponding to the formation of cut patterns having three or more pitches. It may be possible.

As described above, when the magnification of the projection optical system 86 is changed, the intensity of the beam per unit area in the irradiated surface of the beam (laser beam) changes. A relationship with the change may be obtained, and the intensity of the beam may be changed (adjusted) based on the relationship. Alternatively, the intensity of a part of the beam when the magnification is changed may be detected by a sensor, and the intensity of the beam may be changed (adjusted) based on the detected intensity information. In the latter case, for example, as shown in FIG. 27, a sensor 135 is provided on one end of the upper surface of the base of the photoelectric element 136, and the sensor 135 is driven in the XY plane by driving the photoelectric element 136 by the actuator described above. You may comprise so that a movement to this position is possible. The photoelectric element 136 can move not only in the XY plane but also in the Z-axis direction parallel to the optical axis AXe, tiltable with respect to the XY plane, and rotatable about the Z-axis parallel to the optical axis AXe. You may comprise.

By the way, although not particularly described so far, since the photoelectric layer 60 has a certain area, there is no guarantee that the in-plane photoelectric conversion efficiency is uniform, and the photoelectric layer 60 has an in-plane photoelectric conversion efficiency. It is practical to think of having a distribution. Therefore, the intensity of the light beam applied to the photoelectric element may be adjusted according to the in-plane distribution of the photoelectric conversion efficiency of the photoelectric layer 60. That is, assuming that the photoelectric layer 60 has a first part of the first photoelectric conversion efficiency and a second part of the second photoelectric conversion efficiency, based on the first photoelectric conversion efficiency and the second photoelectric conversion efficiency, respectively. The intensity of the beam applied to the first part and the intensity of the beam applied to the second part may be adjusted. Alternatively, the intensity of the light beam applied to the first part and the intensity of the light beam applied to the second part are adjusted so as to compensate for the difference between the first photoelectric conversion efficiency and the second photoelectric conversion efficiency. Also good.

In the exposure apparatus 1000 according to the second embodiment, instead of the aperture-integrated photoelectric element 136, an aperture-separated photoelectric element in which the aperture plate (aperture member) is separate from the photoelectric element may be used. . An aperture-separated photoelectric element 138 shown in FIG. 32A includes a photoelectric element 140 in which a photoelectric layer 60 is formed on the lower surface (light emitting surface) of a base material 134, and an upper side of the base material 134 of the photoelectric element 140 ( And an aperture plate 142 made of a light-shielding member having a large number of apertures 58a disposed on the light incident surface side with a predetermined clearance (gap, gap) of 1 μm or less, for example.

When using an aperture-separated photoelectric element, it is desirable to provide a drive mechanism that can drive the aperture plate 142 in the XY plane. In such a case, a multi-pitch aperture similar to the aperture-integrated photoelectric element 136a described above is formed on the aperture plate 142, and the magnification enlargement function of the projection optical system 86, the photoelectric element 140, and the aperture plate 142 are provided. By using the function of driving while maintaining the positional relationship between the two, it becomes possible to form a cut pattern for cutting line patterns having different pitches by the same procedure as described above. In addition to this, a driving mechanism capable of driving the photoelectric element 140 in the XY plane may be provided. For example, by driving only one of the photoelectric element 140 and the aperture plate 142 and shifting the relative position of the aperture plate 142 and the photoelectric element 140 in the XY plane, the lifetime of the photoelectric layer 60 can be increased. . Note that the projection optical system 86 may be configured to be movable in the XY plane with respect to the aperture plate 142. The aperture plate 142 can move not only in the XY plane but also in the Z-axis direction parallel to the optical axis AXe, tiltable with respect to the XY plane, and rotatable about the Z-axis parallel to the optical axis AXe. The gap between the photoelectric element 140 and the aperture plate 142 may be adjustable.

In addition, when using an aperture-separated photoelectric element, only a driving mechanism for moving the photoelectric element 140 may be provided. Also in this case, the lifetime of the photoelectric layer 60 can be extended by moving the photoelectric element 140 in the XY plane. In addition, even when the integrated photoelectric element described in the first embodiment is used, a driving mechanism for moving the photoelectric element 54 may be provided. Also in this case, the lifetime of the photoelectric layer 60 can be extended by moving the photoelectric element 54 in the XY plane.

It should be noted that the aperture plate aperture and the photoelectric element aperture described above may be used in combination. That is, an aperture plate may be arranged on the light beam incident side of the above-described aperture-integrated photoelectric element, and the beam that has passed through the aperture plate aperture may be incident on the photoelectric layer via the aperture-integrated photoelectric element aperture. .

In addition, when the above-described aperture-separated photoelectric element is used in forming a cut pattern for cutting line patterns having different pitches, the aperture plate may be replaced. When the above-described aperture-separated photoelectric element is used, a plurality of apertures may be formed using a spatial light modulator such as a transmissive liquid crystal element instead of the aperture plate.

In the above description, the case where the magnification enlargement function of the projection optical system 86 is used when forming cut patterns for cutting line patterns having different pitches has been described. However, instead of changing the magnification, the aperture from the projection optical system 86 is used. There may be provided a device for changing the pitch of a plurality of beams irradiated respectively to a plurality of apertures in the same aperture row of the integrated photoelectric element 136a or the aperture plate 142. For example, it is possible to change the pitch of the plurality of beams by arranging a plurality of parallel plates in the optical path between the projection optical system 86 and the photoelectric element and changing the inclination angle thereof.

The aperture-integrated photoelectric element is not limited to the type shown in FIG. 28A. For example, as shown in FIG. 28B, the photoelectric element 136 in FIG. A photoelectric element 136b in which the space is filled with a transparent film 148 can also be used. In the photoelectric element 136b, instead of the transparent film 148, a part of the base material can fill the space in the aperture 58a.

In addition, as shown in FIG. 28C, a light-shielding film 58 having an aperture 58a is formed on the upper surface (light incident surface) of the substrate 134 by vapor deposition of chromium, and the lower surface (light emitting surface) of the substrate 134. As shown in FIG. 28D, the photoelectric element 136c of the type in which the photoelectric layer 60 is formed, or the type in which the space in the aperture 58a is filled with the transparent film 148 in the photoelectric element 136c of FIG. Alternatively, the photoelectric element 136d may be used.

In addition, as shown in FIG. 28E, there is a photoelectric element 136e of a type in which the photoelectric layer 60 is formed on the lower surface of the base material 134 and the light shielding film 58 having the aperture 58a is formed on the lower surface of the photoelectric layer 60. To do. Note that the light-shielding film (chrome film) 58 in FIG. 28E has a function of shielding electrons, not light.

In any of the aperture-integrated

photoelectric elements

136, 136a, 136b, 136c, 136d, and 136e described so far, the base material 134 is not only made of quartz, but by a laminate of quartz and a transparent film (single layer or multilayer). It may be configured.

For example, in order to configure the aperture-separated photoelectric element together with the photoelectric element 140 shown in FIG. 32A, the substrate is not limited to a type including only a light-shielding member having an aperture such as the aperture plate 142, and a base material and a light-shielding film. An aperture plate integrated with can be used. As this type of aperture plate, for example, as shown in FIG. 32B, a light shielding film 58 having an aperture 58a is formed on the lower surface (light emitting surface) of a base material 144 made of, for example, quartz by vapor deposition of chromium. Aperture plate 142a, as shown in FIG. 32C, a substrate 150 made of quartz and a transparent film 148, and a lower surface (light emitting surface) of the substrate 150 by vapor deposition of chromium. As shown in FIG. 32D, the aperture plate 142b on which the light shielding film 58 having 58a is formed, and in the aperture plate 142a, the aperture plate 142c in which the space in the aperture 58a is filled with the transparent film 148, FIG. E), in the aperture plate 142a, the space in the aperture 58a is filled with a part of the base material 144. And has an aperture plate 142d can be used. Note that the

aperture plates

142, 142a, 142b, 142c, and 142d can be used upside down.

In the first embodiment described above, a vacuum partition is provided in the main body 52 instead of the photoelectric element 54 also serving as the vacuum partition of the main body 52 of the photoelectric capsule 50, and a predetermined clearance is provided below the vacuum partition. Various types of aperture-integrated photoelectric elements or aperture-separated photoelectric elements described above may be arranged and housed in the main body 52. A drive mechanism for moving the aperture-integrated photoelectric element 136 (136a to 136d) or a drive mechanism for moving at least one of the photoelectric element 140 and the aperture plate 142 (142a to 142d) may be provided.

In the above, description has been made on the assumption that the

photoelectric elements

54, 136, 136a to 136e and the plurality of apertures 58a of the

aperture plates

142, 142a to 142d are all the same size and shape. All the sizes of the plurality of apertures 58a may not be the same, and the shape may not be the same for all the apertures 58a. In short, the aperture 58a may be smaller than the size of the corresponding beam so that the corresponding beam is irradiated to the entire area.

In the exposure apparatus 1000 according to the second embodiment, only the photoelectric element 140 may be used without using the aperture plate. Also in this case, as described above, the wafer W is exposed by scanning exposure in which an electron beam is irradiated while moving in the Y-axis direction. In this case, a first state in which a plurality of light beams can be irradiated to the photoelectric layer 60 through the base material 134 of the photoelectric element 140 at a first pitch (for example, pitch (interval) a) in the X-axis direction, and the X-axis direction By switching from one to the other in the second state in which a plurality of light beams can be irradiated onto the photoelectric layer 60 through the base material 134 of the photoelectric element 140 at a second pitch (for example, pitch (interval) b), the pitch is changed. It is possible to form a cut pattern for cutting line patterns having different values. Also in this case, the magnification changing function of the projection optical system 86 may be used together. Also in this case, instead of changing the magnification, a device for changing the pitch (interval) of a plurality of beams emitted from the projection optical system 86 to the photoelectric element 140 may be provided. For example, it is possible to change the pitch (interval) of the plurality of beams by arranging a plurality of parallel plates in the optical path between the projection optical system 86 and the photoelectric element and changing the inclination angle thereof. In this case, it may be possible to cope with the formation of cut patterns having three or more pitches.

In the first and second embodiments (hereinafter referred to as each embodiment), the case where the optical system included in the

exposure apparatuses

100 and 1000 is a multi-column type including a plurality of multi-beam optical systems 200 will be described. However, the present invention is not limited to this, and the optical system may be a single column type multi-beam optical system. Even in such a single column type multi-beam optical system, the dose control, magnification control, correction of pattern image position deviation, correction of various aberrations such as distortion, photoelectric elements or aperture plates described above are used. Correction of various elements and extension of the lifetime of the photoelectric layer can be applied.

In each of the above embodiments, an opening may be provided in the peripheral wall portion 76 so that the second vacuum chamber 72 and the inside of the stage chamber 10 may be a single vacuum chamber. Or while leaving only a part of upper end part of the surrounding wall part 76, the cooling plate 74 is removed, and it is good also considering the 2nd vacuum chamber 72 and the inside of the stage chamber 10 as one vacuum chamber.

In each of the above embodiments, the wafer W is independently transferred onto the wafer stage WST, and exposure is performed by irradiating the wafer W with a beam from the multi-beam optical system 200 while moving the wafer stage WST in the scanning direction. Although the

exposure apparatuses

100 and 1000 have been described, the present invention is not limited to this, and the exposure apparatuses of the type in which the wafer W is integrated with a table (holder) that can be transported integrally with a wafer called a shuttle and are exchanged on the stage are also included in the above-described exposure apparatuses. The embodiment (excluding wafer stage WST) is applicable.

In each of the above embodiments, the case where wafer stage WST is movable in the direction of six degrees of freedom with respect to the X stage has been described. However, the present invention is not limited to this, and wafer stage WST is movable only in the XY plane. May be. In this case, the position measurement system 28 that measures the position information of wafer stage WST may also be able to measure position information regarding the three degrees of freedom direction in the XY plane.

In each of the above embodiments, the case where the optical system 18 is supported on the floor surface via the frame 16 constituting the ceiling portion of the stage chamber 10 has been described. However, the present invention is not limited thereto, and the ceiling surface of the clean room or the vacuum chamber is used. The suspension surface may be suspended and supported at, for example, three points by a suspension support mechanism having an anti-vibration function.

In addition, the exposure technology that constitutes complementary lithography is not limited to the combination of the immersion exposure technology using an ArF excimer laser light source and the charged particle beam exposure technology. For example, a line and space pattern can be formed using an ArF excimer laser light source or You may form by the dry exposure technique using a KrF excimer laser light source and other light sources.

In each of the above embodiments, the case where the target is a wafer for manufacturing a semiconductor element has been described. However, the

exposure apparatuses

100 and 1000 according to each of the above embodiments form a mask by forming a fine pattern on a glass substrate. It can also be suitably applied when manufacturing.

As shown in FIG. 33, an electronic device such as a semiconductor element includes a step of designing a function and performance of the device, a step of manufacturing a wafer from a silicon material, an actual circuit on the wafer by a lithography technique, and the like. The wafer is manufactured through a wafer processing step, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like. The wafer processing step includes a lithography step (a step of applying a resist (sensitive material) on the wafer, exposure to the wafer by the electron beam exposure apparatus and the exposure method thereof according to the above-described embodiment) A step of performing (drawing), a step of developing the exposed wafer), an etching step for removing the exposed member other than the portion where the resist remains by etching, and a resist for removing the unnecessary resist after the etching. Including a removal step. The wafer processing step may further include a pre-process (an oxidation step, a CVD step, an electrode formation step, an ion implantation step, etc.) prior to the lithography step. A device pattern is formed on the wafer by executing the above-described exposure method using one of the

exposure apparatuses

100 and 1000, so that a highly integrated microdevice can be manufactured with high productivity (yield). In particular, in the lithography step (exposure process), the above-described complementary lithography is performed, and at that time, the above-described exposure method is executed using any of the

exposure apparatuses

100 and 1000 of the above-described embodiments. Therefore, it becomes possible to manufacture a microdevice with a higher degree of integration.

In each of the above embodiments, the exposure apparatus using an electron beam has been described. However, the exposure apparatus is not limited to the exposure apparatus, and an apparatus that performs at least one of predetermined processing and predetermined processing on a target using an electron beam such as welding, or The electron beam apparatus of the above embodiment can also be applied to an inspection apparatus using an electron beam.

In each of the above embodiments, the case where the photoelectric layer 60 is formed of an alkali photoelectric conversion film has been described. However, depending on the type and use of the electron beam device, the photoelectric layer is not limited to the alkali photoelectric conversion film, but may be other types. You may comprise a photoelectric element using a kind of photoelectric conversion film.
In the above-described embodiments, shapes of members, openings, holes, and the like may be described using circles, rectangles, and the like, but it goes without saying that the shapes are not limited to these shapes.

It should be noted that the disclosures of all publications, international publications, US patent application publication specifications, US patent specifications, and the like related to the exposure apparatus and the like cited in the above embodiments are incorporated herein by reference.

DESCRIPTION OF SYMBOLS 10 ... Stage chamber, 34 ... 1st vacuum chamber, 50 ... Photoelectric capsule, 52 ... Main part, 54 ... Photoelectric element, 58 ... Light-shielding film, 58a ... Aperture, 58b ... Aperture, 60 ... Photoelectric layer, 62 ... O-ring 64 ... Lid member, 66 ... Vacuum-compatible actuator, 68 ... Lid storage plate, 68c ... Circular opening, 70 ... Electron beam optical system, 72 ... Second vacuum chamber, 82 ... Illumination system, 82b ... Molding optical system, 84 DESCRIPTION OF SYMBOLS ... Pattern generator, 86 ... Projection optical system, 88 ... Laser diode, 98 ... Mirror, 100 ... Exposure apparatus, 102 ... Circuit board, 102a ... Opening, 110 ... Main controller, 112 ... Extraction electrode, 134 ... Base material, 136 ... Photoelectric element 140 ... Photoelectric element 142 ... Aperture member 144 ... Base material EB ... Electron beam LB ... Laser beam W ... Wafer WST ... Ehasuteji.

Claims

An electron beam device that irradiates light onto a photoelectric element and irradiates a target with electrons generated from the photoelectric element as an electron beam,
An optical device capable of providing a plurality of individually controllable light beams;
An illumination system for illuminating the optical device with illumination light;
A first optical system for irradiating the photoelectric element with a plurality of light beams generated from a plurality of light beams from the optical device;
And a second optical system that irradiates the target with electrons emitted from the photoelectric element by irradiating the photoelectric element with the plurality of light beams.
The electron beam apparatus according to claim 1, wherein the target is irradiated with the plurality of electron beams while moving in a first direction orthogonal to an optical axis of the second optical system.
3. The electron beam apparatus according to claim 1, wherein the illumination system can change at least one of intensity and intensity distribution of illumination light.
The electron beam apparatus according to any one of claims 1 to 3, wherein the illumination system has an intermittent lighting function.
The electron beam apparatus according to any one of claims 1 to 4, wherein the illumination system includes a shaping optical system that generates one or more lights having a predetermined cross-sectional shape from light from a light source.
The said shaping | molding optical system produces | generates the 1 or 2 or more light which has a long cross-sectional shape in the direction corresponding to the 2nd direction orthogonal to the said 1st direction while orthogonal to the optical axis of the said 2nd optical system. 5. The electron beam apparatus according to 5.
The electron beam apparatus according to claim 6, wherein the optical axis of the optical system of the illumination system and the optical axis of the first optical system are not coaxial but are parallel to each other.
The electron beam apparatus according to claim 7, wherein the optical axis of the optical system of the illumination system and the optical axis of the first optical system are offset in a direction corresponding to the first direction.
The illumination system has a mirror that reflects the illumination light toward the optical device;
The holding member that holds the optical device is formed with an opening through which one or more light incident on the mirror through the shaping optical system passes. The electron beam apparatus as described.
The electron beam apparatus according to any one of claims 1 to 9, wherein the optical device is capable of changing an intensity of at least one of a plurality of beams emitted from the optical device.
11. The electron beam apparatus according to claim 1, wherein the photoelectric element has a photoelectric conversion layer.
The electron beam apparatus according to claim 11, further comprising a plurality of apertures disposed between the first optical system and the photoelectric conversion layer.
The plurality of apertures are provided on an aperture member disposed on an optical path between the first optical system and the photoelectric element, and a plurality of light beams that have passed through the plurality of apertures are irradiated onto the photoelectric element. The electron beam apparatus according to claim 12.
14. The electron beam apparatus according to claim 13, comprising the aperture member.
The aperture member has a light transmissive member capable of transmitting the light beam, and a light shielding layer disposed on one side of the light transmissive member,
15. The electron beam apparatus according to claim 13, wherein the plurality of apertures include a plurality of openings formed in the light shielding layer.
The electron beam apparatus according to claim 15, wherein the light shielding layer is disposed on a light emitting surface side of the light transmitting member.
The electron beam apparatus according to any one of claims 13 to 16, wherein the aperture member is movable in a direction perpendicular to the optical axis of the first optical system.
The electron beam apparatus according to any one of claims 13 to 17, wherein the aperture member and the first optical system are relatively movable in a direction orthogonal to an optical axis of the first optical system.
The electron beam apparatus according to any one of claims 13 to 18, wherein the aperture member and the photoelectric element are relatively movable in a direction perpendicular to the optical axis of the first optical system.
The aperture member and the photoelectric element are movable in a direction perpendicular to the optical axis of the first optical system while maintaining a positional relationship between the aperture member and the photoelectric element. The electron beam apparatus according to Item.
The electron beam apparatus according to any one of claims 13 to 20, wherein the aperture member is disposed on an optical path between the photoelectric element and the first optical system via a gap with the photoelectric element. .
The photoelectric element has a light transmission member capable of transmitting the light beam,
The electron beam apparatus according to any one of claims 11 to 21, wherein the photoelectric conversion layer is disposed on a light emitting surface of the light transmitting member.
The photoelectric element includes a light transmissive member capable of transmitting the light beam;
A photoelectric conversion layer disposed on a light exit surface of the light transmitting member;
A light shielding layer disposed on one side of the light transmissive member,
A plurality of apertures are formed in the light shielding layer as a plurality of apertures,
The electron beam apparatus according to any one of claims 1 to 13, wherein a plurality of light beams that have passed through the plurality of openings are incident on the photoelectric conversion layer.
24. The electron beam apparatus according to claim 23, wherein the light shielding layer is disposed on a light emitting surface side of the light transmitting member.
25. The electron beam apparatus according to claim 24, wherein a photoelectric conversion layer is disposed in the plurality of openings formed in the light shielding layer.
26. The electron beam apparatus according to claim 25, wherein the light shielding layer is disposed on a light incident surface side of the light transmitting member.
The electron beam apparatus according to any one of claims 23 to 26, wherein the photoelectric element is movable in a direction orthogonal to the optical axis of the second optical system.
The plurality of light beams from the optical device irradiated to the first position of the photoelectric element by the first optical system are incident on the photoelectric conversion layer through one of the plurality of apertures. The electron beam apparatus according to any one of 12 to 27.
The plurality of light beams from the optical device irradiated to the second position of the photoelectric element by the first optical system are converted into the photoelectric conversion through an aperture different from the one of the plurality of apertures. 29. The electron beam device according to claim 28, which is incident on the layer.
The electron beam apparatus according to any one of claims 12 to 29, wherein the size of each of the plurality of apertures is smaller than the size of the cross section of the corresponding light beam.
Each of the plurality of apertures restricts a corresponding light beam;
The electron beam apparatus according to any one of claims 12 to 30, wherein a plurality of light beams that have passed through each of the plurality of apertures are incident on the photoelectric conversion layer.
The shape of at least one of the plurality of apertures is such that the plurality of electron beams generated when a plurality of light beams that have passed through the plurality of apertures enter the photoelectric conversion layer are irradiated on the target. The electron beam apparatus according to any one of claims 12 to 31, which has a shape different from that of the region.
33. The electron beam apparatus according to claim 32, wherein the shape of the at least one aperture is determined such that an irradiation area on the target of each of the plurality of electron beams is rectangular.
34. The electron beam apparatus according to claim 33, wherein a shape of the at least one aperture is determined so as to suppress rounding of a corner of an irradiation area on the target.
The shape of the at least one aperture is determined in consideration of electron forward scattering that occurs when the target is irradiated with the plurality of electron beams. Beam device.
The electron beam apparatus according to any one of claims 12 to 35, wherein the arrangement of the plurality of apertures is determined based on optical characteristics of the second optical system.
The electron beam apparatus according to any one of claims 12 to 36, wherein the arrangement of the plurality of apertures is determined based on a distortion aberration of the second optical system.
The electron according to any one of claims 12 to 37, wherein the arrangement of the plurality of apertures is determined so as to cancel or reduce the influence of the aberration of the second optical system on the plurality of electron beams. Beam device.
The target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system,
The plurality of apertures includes a plurality of apertures that are orthogonal to the optical axis of the second optical system and arranged along a direction corresponding to a second direction that is orthogonal to the first direction. The electron beam apparatus as described in any one of Claims.
The plurality of apertures includes a first group including a plurality of apertures arranged at a first pitch in a direction corresponding to the second direction, and a plurality of apertures arranged at a second pitch in a direction corresponding to the second direction. A second group including an aperture,
40. The electron beam apparatus according to claim 39, wherein the first group and the second group are separated from each other in a direction corresponding to the first direction.
A first state in which the plurality of apertures included in the first group are disposed on an optical path of the plurality of light beams, and the plurality of the plurality of apertures included in the second group on the optical path of the plurality of light beams. 41. The electron beam apparatus according to claim 40, wherein the electron beam apparatus can be switched from one of the second states in which the aperture is disposed to the other.
42. The electron beam apparatus according to claim 41, wherein switching from one of the first state and the second state to the other includes changing a projection magnification of the first optical system.
The electron beam apparatus according to any one of claims 12 to 42, wherein the plurality of apertures are arranged in a plane orthogonal to the optical axis of the first optical system.
The electron beam apparatus according to any one of claims 11 to 43, wherein the photoelectric conversion layer is curved.
45. The electron beam apparatus according to claim 44, wherein the photoelectric conversion layer is curved convexly toward the first optical system.
46. The electron beam apparatus according to claim 44 or 45, wherein the photoelectric conversion layer is curved so as to cancel or reduce the influence of the aberration of the second optical system on the plurality of electron beams.
The electron beam apparatus according to any one of claims 44 to 46, wherein at least a part of curvature of field of the second optical system is compensated by bending the photoelectric conversion layer.
The target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system,
The photoelectric conversion layer according to any one of claims 44 to 47, wherein the photoelectric conversion layer is curved in a direction corresponding to a second direction perpendicular to the optical axis of the second optical system and perpendicular to the first direction. Electron beam device.
The electron emission surface of the photoelectric conversion layer has a first portion and a second portion,
The electron beam apparatus according to any one of claims 11 to 48, wherein a position of the first portion is different from a position of the second portion in an optical axis direction of the second optical system.
The target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system,
A first state in which the photoelectric conversion layer can be irradiated with the plurality of light beams at a first pitch in a direction corresponding to a second direction orthogonal to the first direction and orthogonal to the optical axis of the second optical system. 50. One of the second states in which the plurality of light beams can be irradiated to the photoelectric conversion layer at a second pitch in a direction corresponding to the second direction can be switched from one to the other. The electron beam apparatus according to one item.
51. The electron beam apparatus according to claim 50, wherein switching from one of the first state and the second state to the other includes changing a projection magnification of the first optical system.
The electron beam apparatus according to any one of claims 1 to 51, further comprising a magnification varying device for changing a projection magnification of the first optical system.
The electron beam apparatus according to any one of claims 1 to 52, wherein the photoelectric element is movable in a direction orthogonal to an optical axis of the first optical system.
The electron beam apparatus according to any one of claims 1 to 53, wherein the photoelectric element and the first optical system are relatively movable in a direction orthogonal to an optical axis of the first optical system.
The electron beam apparatus according to any one of claims 1 to 54, wherein the optical device includes a spatial light modulator.
The optical device includes a plurality of movable reflective elements;
The electron beam apparatus according to any one of claims 1 to 55, wherein the plurality of light beams can be provided by reflecting the illumination light by at least a part of the plurality of movable reflection elements.
The target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system,
57. The electron beam according to claim 56, wherein the plurality of movable reflection elements are arranged side by side in a direction corresponding to a second direction orthogonal to the first direction while being orthogonal to the optical axis of the second optical system. apparatus.
The plurality of movable reflective elements includes a first row including a plurality of movable reflective elements arranged in the second direction, and a second row including a plurality of movable reflective elements arranged in the second direction,
58. The electron beam apparatus according to claim 57, wherein the first row and the second row have different positions in a direction corresponding to the first direction.
59. The electron beam apparatus according to claim 58, wherein the second column functions as a backup of the first column.
Irradiating a target region on the target with an electron beam generated by irradiating the photoelectric element with a light beam from one movable reflective element included in the first row;
59. The electron beam apparatus according to claim 58, wherein the target region can be irradiated with an electron beam generated by irradiating the photoelectric element with a light beam from one movable reflective element included in the second row.
Each of the plurality of movable reflective elements has a width in the second direction,
The electron beam apparatus according to any one of claims 58 to 60, wherein the first row and the second row are shifted in the second direction by an amount smaller than the width.
One of the plurality of light beams applied to the photoelectric element can be generated from light beams from a part of two or more movable reflective elements of the plurality of movable reflective elements. 61. The electron beam apparatus according to any one of 61.
The one of the plurality of light beams applied to the photoelectric element can be generated by two or more light beams of a part of the plurality of light beams from the optical device. The electron beam apparatus as described in any one of Claims.
The electron beam apparatus according to any one of claims 1 to 63, wherein the first optical system includes at least one movable optical member positioned between the optical device and the arrangement position of the photoelectric element.
An electron beam device that irradiates light onto a photoelectric element and irradiates a target with electrons generated from the photoelectric element as an electron beam,
An optical device capable of providing a plurality of individually controllable light beams;
A first optical system for irradiating the photoelectric element with a plurality of light beams generated by a plurality of light beams from the optical device;
A second optical system that irradiates the target with electrons emitted from the photoelectric element as a plurality of electron beams by irradiating the photoelectric element with the plurality of light beams;
An electron beam apparatus capable of generating one of the plurality of light beams applied to the photoelectric element with two or more of the plurality of light beams from the optical device.
The optical device includes a plurality of movable reflective elements,
A plurality of light beams from the optical device are generated using the plurality of movable reflective elements,
66. One of a plurality of light beams applied to the photoelectric element can be generated from a light beam from a part of two or more movable reflective elements of the plurality of movable reflective elements. Electron beam equipment.
Another one of the plurality of light beams irradiated on the photoelectric element can be generated by another two or more light beams of the plurality of light beams from the optical device, and the other two The electron beam apparatus according to any one of claims 62 to 66, wherein the intensity of another light beam generated by the light beam can be changed.
67. The electron beam apparatus according to claim 62 or 66, wherein the optical device includes a light diffraction type light valve.
Each of the two or more movable reflective elements is either a first state in which light from the movable reflective element is incident on the photoelectric element or a second state in which light from the movable reflective element is not incident on the photoelectric element. 67. The electron beam apparatus according to claim 62 or 66, wherein the electron beam apparatus is controllable to be one of them.
The electron beam according to any one of claims 62, 66, and 69, wherein the optical device changes a relative position of the two or more movable reflective elements to generate at least one of the plurality of light beams. apparatus.
The two or more movable reflective elements change a phase difference between light from one of the two or more movable reflective elements and light from another one of the two or more movable reflective elements. The electron beam apparatus according to claim 70, wherein the electron beam apparatus is controllable.
The light from the illumination system has an illumination area in which the dimension in the direction along the first axis is smaller than the dimension in the direction along the second axis perpendicular to the first axis, the first axis and the second axis. Illuminating from the direction of the axis intersecting the first axis and the third axis, located in a plane including the third axis orthogonal to the first axis and the first axis,
The electron beam apparatus according to any one of claims 1 to 64, wherein the optical device is arranged in the illumination area.
An electron beam apparatus that irradiates a photoelectric element with light and irradiates a target with electrons generated from the photoelectric element by irradiation with the light as an electron beam,
Lighting system,
An optical device capable of providing a plurality of individually controllable light beams by irradiation of illumination light from the illumination system;
A first optical system for irradiating the photoelectric element with a plurality of light beams generated from a plurality of light beams from the optical device;
A second optical system for irradiating the target with one or more electron beams generated from the photoelectric element,
The illumination light from the illumination system has an illumination area in which the dimension in the direction along the first axis is smaller than the dimension in the direction along the second axis perpendicular to the first axis. Illuminated from the direction of the axis intersecting the first axis and the third axis, located in a plane including the third axis orthogonal to the axis and the first axis,
An electron beam apparatus in which the optical device is disposed in the illumination area.
The target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system,
74. The electron beam apparatus according to claim 72, wherein the first axis is parallel to the first direction.
A deflection member for deflecting illumination light from the illumination system;
The electron beam apparatus according to any one of claims 72 to 74, wherein the light deflected by the deflecting member is applied to the illumination region from a direction of the axis that intersects the first axis and the third axis. .
The electron beam apparatus according to any one of claims 72 to 75, wherein an optical axis of the illumination system and an optical axis of the first optical system are shifted in a direction parallel to the first axis.
An electron beam apparatus that irradiates a photoelectric element with light and irradiates a target with electrons generated from the photoelectric element by irradiation with the light as an electron beam,
A plurality of first optical systems for irradiating at least one light beam to each of a plurality of photoelectric elements arranged along a second axis orthogonal to the first axis;
A plurality of second optical systems arranged along the second axis and irradiating the target with each of a plurality of electron beams generated from the plurality of photoelectric elements by irradiation of the light beam with the plurality of first optical systems. And comprising
The electron beam apparatus, wherein the first axis and the second axis are perpendicular to the optical axis of the second optical system.
At least one light beam from one of the plurality of first optical systems is applied to one of the plurality of photoelectric elements;
78. The electron beam apparatus according to claim 77, wherein at least one electron beam generated from one of the plurality of photoelectric elements is irradiated to the target via one of the plurality of second optical systems.
A plurality of illumination systems arranged along a direction parallel to the second axis;
A plurality of optical devices illuminated with light from the plurality of illumination systems; and
At least one illumination light from one of the plurality of illumination systems is applied to one of the plurality of optical devices;
The electron beam apparatus according to claim 77 or 78, wherein at least one light beam from one of the plurality of optical devices is incident on one of the plurality of first optical systems.
A plurality of illumination lights from the plurality of illumination systems are irradiated to each of a plurality of illumination regions,
The plurality of optical devices are respectively disposed in the plurality of illumination regions;
80. The electron beam apparatus according to claim 79, wherein each of the illumination areas has a longitudinal direction parallel to the second axis.
The electron beam apparatus according to any one of claims 77 to 80, wherein the target is irradiated with the electron beam while moving in a first direction parallel to the first axis.
82. The electron beam apparatus according to claim 81, wherein the target is irradiated with a plurality of the electron beams separated along a direction parallel to the second axis.
The cross-sectional shape of at least one light beam applied to each of the plurality of photoelectric elements in a plane perpendicular to the optical axis of the second optical system has a longitudinal direction on the second axis. 82. The electron beam apparatus according to any one of 82.
The electron beam apparatus according to any one of claims 1 to 83, wherein the second optical system is an electron optical system having an electrostatic deflection lens.
85. The electron beam apparatus according to claim 84, wherein the electrostatic deflection lens is used for at least one of adjusting a reduction magnification of the second optical system and adjusting positions of the plurality of electron beams irradiated on the target.
The target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system,
The second optical system has a rectangular exposure field whose length in the first direction is t, substantially perpendicular to the optical axis of the second optical system, and whose length in the second direction perpendicular to the first direction is s. Have
The electron beam apparatus according to claim 84 or 85, wherein a plurality of electron beams from the second optical system are irradiated into the exposure field.
The electron beam apparatus according to claim 86, wherein the rectangular exposure field has an aspect ratio t / s of 1/12 to 1/4.
88. The electron beam apparatus according to claim 86 or 87, wherein the exposure field is set so as to include an optical axis of the second optical system.
The first optical system includes a reduction projection optical system,
The second optical system is a reduction electron optical system;
The electron beam apparatus according to any one of claims 1 to 88, wherein the exposure field is set in an effective aberration area of the second optical system.
The photoelectric element has an electron emission surface,
A vacuum chamber in which the electron emission surface and the second optical system are disposed;
The electron beam apparatus according to any one of claims 1 to 89, wherein the target is irradiated with the plurality of electron beams in the vacuum chamber.
The electron beam apparatus according to claim 90, wherein the photoelectric element functions as a partition wall that separates the vacuum chamber from a space outside the vacuum chamber.
92. The electron beam apparatus according to claim 90 or 91, wherein the vacuum chamber includes a first chamber in which the electron emission surface is disposed and a second chamber in which the second optical system is disposed.
A first support member for supporting a lid member released from a main body portion in which an electron emission surface of the photoelectric element is disposed in an internal space;
An actuator for moving the first support member,
The main body has an opening,
The lid member can be releasably attached to the main body so as to close the opening,
When the lid member is released from the main body and the lid member supported by the first support member is moved to the retracted position, the electrons emitted from the electron emission surface pass through the opening to the second. The electron beam apparatus according to any one of claims 1 to 92, which is movable toward the optical system.
The first support member has an opening;
When the lid member supported by the first support member is moved to the retracted position, an opening of the first support member is disposed between the main body portion and the second optical system, and from the electron emission surface. 94. The electron beam apparatus according to claim 93, wherein the emitted electrons are movable toward the second optical system via the opening of the main body and the opening of the first support member.
95. The seal member according to claim 93 or 94, wherein a seal member located between the main body and the lid member when the lid member is attached to the main body is provided on at least one of the main body and the lid member. Electron beam equipment.
The electron beam according to any one of claims 93 to 95, wherein an extraction electrode for accelerating electrons emitted from the electron emission surface toward the second optical system is disposed on the first support member. apparatus.
The electron beam apparatus according to any one of claims 93 to 96, wherein a sensor capable of measuring the intensity of an electron beam incident on the second optical system is disposed on the first support member.
The operation of mounting the lid member on the main body and the operation of releasing the lid member from the main body are performed in a vacuum state in the internal space of the main body and the space around the main body. The electron beam apparatus according to any one of the above.
The electron beam apparatus according to any one of claims 93 to 98, wherein the internal space is maintained in a vacuum state by mounting the lid member on the main body.
A second support member that releasably supports the main body,
The electron beam apparatus according to any one of claims 93 to 99, wherein the main body portion can be released from the second support member in a state where the lid member is attached to the main body portion.
The electron beam apparatus according to any one of claims 1 to 100, comprising a plurality of each of the optical device, the first optical system, and the second optical system.
A movable stage for supporting the target;
The electron beam apparatus according to any one of claims 1 to 101, further comprising: a control device that controls movement of the movable stage and adjusts an irradiation state of the electron beam applied to the target.
A device manufacturing method including a lithography process,
The lithography process includes forming a line and space pattern on a target and cutting the line pattern constituting the line and space pattern using the electron beam apparatus according to any one of claims 1 to 102. Performing a device manufacturing method.
An exposure method for irradiating light onto a photoelectric element and irradiating a target with electrons generated from the photoelectric element as an electron beam,
Illuminating an optical device capable of providing a plurality of individually controllable light beams with illumination light from an illumination system;
Irradiating the photoelectric element with a plurality of light beams generated from a plurality of light beams from the optical device via a first optical system;
Irradiating the target from the second optical system with a plurality of electron beams emitted from the photoelectric element by irradiating the photoelectric element with the plurality of light beams.
An exposure method for irradiating light onto a photoelectric element and irradiating a target with electrons generated from the photoelectric element as an electron beam,
Irradiating the photoelectric element via a first optical system with a plurality of light beams generated from a plurality of light beams from an optical device capable of providing individually controllable light beams;
Irradiating the target from the second optical system with electrons emitted from the photoelectric element by irradiating the photoelectric element with the plurality of light beams as a plurality of electron beams,
One of the plurality of light beams applied to the photoelectric element is generated by a part of two or more of the plurality of light beams from the optical device, and the photoelectric element is applied to the photoelectric element. An exposure method in which another one of the plurality of light beams is generated by another two or more light beams of the plurality of light beams from the optical device.
An exposure method for irradiating light onto a photoelectric element and irradiating a target with electrons generated from the photoelectric element as an electron beam,
Irradiating the photoelectric element through a first optical system with a plurality of light beams generated by a plurality of light beams from an optical device capable of providing a plurality of individually controllable light beams;
Irradiating the target from the second optical system with electrons emitted from the photoelectric element by irradiating the photoelectric element with the plurality of light beams as a plurality of electron beams,
An exposure method in which one of the plurality of light beams irradiated on the photoelectric element is generated by two or more of the plurality of light beams from the optical device.
An exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element by irradiation with the light as an electron beam,
A plurality of light beams generated from a plurality of light beams from an optical device capable of providing a plurality of individually controllable light beams by irradiation of illumination light from the illumination system through the first optical system, the photoelectric element Irradiating
Irradiating the target with one or more electron beams generated from the photoelectric element from a second optical system,
The illumination light from the illumination system has an illumination area in which the dimension in the direction along the first axis is smaller than the dimension in the direction along the second axis perpendicular to the first axis. Illuminated from the direction of the axis intersecting the first axis and the third axis, located in a plane including the third axis orthogonal to the axis and the first axis,
An exposure method in which the optical device is disposed in the illumination area.
An exposure method for irradiating a photoelectric element with light and irradiating a target with electrons generated from the photoelectric element by irradiation with the light as an electron beam,
Irradiating each of a plurality of photoelectric elements arranged along a second axis orthogonal to the first axis with at least one light beam via the plurality of first optical systems;
Each of a plurality of electron beams generated from the plurality of photoelectric elements by being irradiated with the light beam by the plurality of first optical systems is arranged along the second axis via the plurality of second optical systems. Irradiating with,
The exposure method, wherein the first axis and the second axis are perpendicular to the optical axis of the second optical system.
The exposure method according to any one of claims 104 to 108, wherein the target is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to the optical axis of the second optical system.
A device manufacturing method including a lithography process,
The lithography process includes forming a line and space pattern on a target and cutting the line pattern constituting the line and space pattern using the exposure method according to any one of claims 104 to 109. Performing a device manufacturing method.