WO2018144772A1 - Performance de détection de pression améliorée pour capteurs de pression - Google Patents

Performance de détection de pression améliorée pour capteurs de pression Download PDF

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WO2018144772A1
WO2018144772A1 PCT/US2018/016506 US2018016506W WO2018144772A1 WO 2018144772 A1 WO2018144772 A1 WO 2018144772A1 US 2018016506 W US2018016506 W US 2018016506W WO 2018144772 A1 WO2018144772 A1 WO 2018144772A1
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electrode layer
conductive
pressure sensor
pressure
μπι
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PCT/US2018/016506
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English (en)
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Xiangfeng Duan
Yu Huang
Yun-Chiao HUANG
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The Regents Of The University Of California
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/146—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors for measuring force distributions, e.g. using force arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Definitions

  • This disclosure generally relates to pressure sensors.
  • E-skins Electronic skins with sensory capabilities mimicking human-skin or beyond are desirable for wearable healthcare monitoring devices, robotic technologies, human-machine interface (HMI) and artificial intelligence (AI).
  • HMI human-machine interface
  • AI artificial intelligence
  • a pressure sensor includes: (1) a first electrode layer; (2) a second electrode layer including multiple conductive microstructures extending toward the first electrode layer; and (3) a dielectric layer between the first electrode layer and the second electrode layer.
  • a pressure sensor includes: (1) a source electrode; (2) a drain electrode; (3) a channel extending between the source electrode and the drain electrode; (4) an electrode layer including multiple conductive microstructures extending toward the channel; and (5) a dielectric layer between the electrode layer and the channel.
  • a pressure sensor includes: (1) M elongated strips; and (2) N elongated strips.
  • the M elongated strips extend crosswise relative to the N elongated strips to define M ⁇ N intersections.
  • Each of the M elongated strips includes a first electrode layer and a dielectric layer, and each of the N elongated strips includes a second electrode layer including multiple conductive microstructures extending toward the first electrode layer, with the dielectric layer between the first electrode layer and the second electrode layer.
  • a pressure sensor includes: (1) M elongated strips; and (2) N elongated strips.
  • the M elongated strips extend crosswise relative to the N elongated strips to define M ⁇ N intersections.
  • a corresponding one of the M elongated strips includes a gate-absent transistor and a dielectric layer
  • a corresponding one of the N elongated strips includes an electrode layer including multiple conductive microstructures extending toward the gate-absent transistor, with the dielectric layer between the gate-absent transistor and the electrode layer.
  • FIG. 1 Capacitance- and transistor-based E-skin with conductive microstructured air gaps (CMAGs).
  • CMAGs Capacitance- and transistor-based E-skin with conductive microstructured air gaps.
  • (a) Schematic illustration of a 5 ⁇ 5 capacitive pressure sensor array with the CMAGs.
  • CMAG-M0S 2 E-skin including two assemblies.
  • a top stack includes the CMAGs on a PET substrate and a bottom stack is composed of a dielectric layer, source and drain electrodes, and M0S 2 as a semiconducting channel on a silicon dioxide substrate, (d) Scanning electron microscope (SEM) image of a top view of conductive microstructured pyramids with an inset showing a zoomed-in image.
  • SEM Scanning electron microscope
  • the height, width, and periodicity of the conductive pyramids are about 3.3 ⁇ , about 7.5 ⁇ , and about 13.5 ⁇ , respectively.
  • the scale bar is denoted as 20 ⁇ .
  • FIG. 1 Flexible CMAG capacitance-based E-skin.
  • FIG. 1 Schematic illustrations of (a) a comparative capacitive pressure sensor with an elastic microstructured dielectric (a conductive electrode is deposited on a flat backside of a microstructured polydimethylsiloxane (PDMS)) and its approximately electrical equivalent circuit (left bottom) and (b) a proposed capacitance-based E-skin with CMAGs (a conductive electrode is coated on a side of microstructured pyramids) and its approximately electrical equivalent circuit (right bottom), (c) The normalized capacitance change and (d) the corresponding sensitivity as a function of varying pressure up to about 1.5 kPa.
  • PDMS microstructuredimethylsiloxane
  • the height, width and periodicity of the conductive pyramids are about 4.1 ⁇ , about 7.5 ⁇ , and about 15.0 ⁇ , respectively.
  • FIG. 3 Tunability of CMAG capacitance-based E-skin.
  • (a, b) Top-view SEM images of two different sizes of conductive pyramids: Pyramid #1 in (a) with a height of about 4.1 ⁇ , width of about 7.5 ⁇ and periodicity of about 15.0 ⁇ , and Pyramid #2 in (b) with a height of about 12 ⁇ , width of about 20 ⁇ , and periodicity of about 100 ⁇ . The scale bars represent 50 ⁇ .
  • the normalized capacitance change, sensitivity, and pressure sensing range can be readily tuned by changing the pyramid size and the periodicity, (e, f) Normalized capacitance change and the sensitivity of an E-skin made of the CMAGs with and without a PET supporting layer.
  • the CMAGs without PET are much softer and more readily deformed, leading to a higher sensitivity.
  • FIG. 4 Pressure sensing performance of a CMAG-M0S 2 E-skin.
  • (c) the corresponding sensitivity at constant V s a about 1 V and different V g .
  • (e) The normalized channel resistance change and (f) the corresponding sensitivity at constant V s a about 1 V.
  • FIG. 6 CMAG-M0S 2 E-skin for acoustic wave detection and speech pattern recognition,
  • FIG. 7 Fabrication processes of CMAGs.
  • Si Silicon (Si) mold with inverse microstructured pyramids was patterned using photolithography, silicon dioxide (Si0 2 ) uncovered by a photoresist was stripped using buffered hydrofluoric acid (BOE), and the remaining Si0 2 was used as a mask for potassium hydroxide (KOH) etching
  • BOE buffered hydrofluoric acid
  • KOH potassium hydroxide
  • a dilute solution of PDMS mixture was drop cast onto an octadecyltrichlorosilane (OTS)-treated Si mold, and then a PET supporting layer was placed on top of the PDMS followed by curing at about 120 °C for about 4 hours
  • OTS octadecyltrichlorosilane
  • Figure 8 Comparisons of the normalized capacitance change for comparative and conductive air-gap devices to different thickness change of air gaps (Ad Ail .) by using a parallel plate capacitor model. ⁇ 3 ⁇ 4 ; ⁇ increases with increasing applied pressure.
  • 3 ⁇ 4 ;r , e PDM s, d PDM s are substituted as about 1, about 3, about 4.1 ⁇ ⁇ ⁇ , and about 20 ⁇ , respectively, into the equations (3) and (5) in Supplementary Note.
  • FIG. 9 Pressure response of a flexible CMAG capacitance-based E-skin.
  • the height, width, and periodicity of conductive pyramids are about 12 ⁇ , about 20 ⁇ , and about 100 ⁇ , respectively.
  • the device shows linear response as pressure increases.
  • the sensitivity is about 44.3 kPa "1 over the pressure range from about 0-5 kPa.
  • Figure 10 Bending stability test of a flexible CMAG capacitance-based E- skin responding to a load of about 86 Pa on a curved surface with a bending radius of about 32.5 mm.
  • FIG. 12 Real-time wrist pulse wave monitoring over about 9.5-second period at low operation voltage of about 0.1 V.
  • the pulse wave indicates the resting heart rate is about 63 b.p.m.
  • FIG. 14 Remote pressure monitoring. Integration of a CMAG-M0S 2 E- skin with system on chip (SoC) allows portable real-time remote pressure monitoring, (a) Source-drain current response to an applied pressure when a finger touched the device, (b) The real-time remote pressure monitoring can be assessed through a user's cell phone by using an open on-line website. The results can be sent to a social media network.
  • SoC system on chip
  • some embodiments are directed to a design of pressure-sensing E-skin by integrating a conductive microstructured air-gap gate with two-dimensional (2D) molybdenum disulfide (M0S 2 ) transistors to achieve an unprecedented combination of high sensitivity, rapid response, low power consumption and long-term stability. It is shown that the design of conductive microstructured air gaps (CMAGs) can be used to create capacitance-based E-skins with an ultrahigh sensitivity of up to about 770.4 kPa "1 (or more) at a low operation voltage of about 1.5 V, which is more than about 170 times better than a comparative capacitance-based device.
  • CMAGs conductive microstructured air gaps
  • the pressure sensitivity can be further amplified to achieve an unprecedented value of about 2.61 ⁇ 10 7 kPa "1 (or more), more than 5 orders of magnitude better than that of other reported transistor-based pressure sensor.
  • the device delivers an overall performance far exceeding that of other pressure-sensing E-skins, and allows realtime human pulse wave measurement, static pressure mapping, sound wave detection, speech pattern recognition, and remote pressure monitoring.
  • E-skin typically refers to an artificial skin with human-like sensory capabilities, especially for pressure sensing that transduces an applied force into an electrical signal, which has attracted significant attention due to the increasing demand for flexible electronic devices such as wearable healthcare monitoring, HMI, robotic technologies, microelectromechanical systems (MEMS), microphones, hearing aids, and so forth.
  • E-skins should not just mimic the real human skin, but provide functions or performance beyond the natural skin to satisfy many application specifications, such as higher sensitivity especially in low pressure regime ( ⁇ about 100 Pa, suitable for lower vibrational force; ⁇ about 10 kPa, approximate to gentle touch), along with other desirable features including fast response time in the millisecond range, lower power consumption, long-term air stability and flexibility for wearable electronic devices.
  • Both capacitance- and transistor-based E-skins are extensively investigated.
  • the capacitance-based E-skins feature streamlined device design, ready readout, excellent stability, and low power consumption, while the transistor based E-skins offer signal amplification, higher sensitivity, and lower power consumption.
  • Promising routes to both types include using compressible dielectrics or air gaps to overcome the less compressible and viscoelastic behavior of rubber, thus enhancing the sensitivity and response time of capacitance-based E-skins.
  • Integrating carbon nanotube or organic transistors with pressure sensitive rubber (PSR) or microstructured dielectrics also can be used.
  • Mechanisms of pressure sensors are usually governed by the compressibility of a material contacted directly with an applied force.
  • the compressibility is also related to the Young's modulus of elastomers. For example, under the same stress, elastomers with a low Young's modulus tend to deform more, leading to a higher sensitivity compared to that with a higher Young's modulus. However, the elastomers with a low Young's modulus exhibit greater viscoelastic behavior that constrains a response time.
  • a flexible aluminum/polyimide composite electrode can be used as an air-gap capacitive pressure sensor with a high sensitivity of about 4.5 kPa " when the pressure is in the range of about 0-3 kPa.
  • transistor-based E-skins with an impressive sensitivity of about 8.4 kPa "1 and fast response time of ⁇ about 10 ms can integrate organic thin film transistors (OTFTs) with elastic microstructured dielectrics.
  • Other transistor-based pressure sensors can use a flexible suspended gate on gate-absent OTFTs to create unstructured air gaps, delivering an ultrahigh sensitivity of about 192 kPa "1 and rapid response time of ⁇ about 10 ms.
  • the sensitivity, S R, and response time of the pressure sensors are still constrained by the lack of actual microstructured air gaps and inherent viscoelastic behavior of rubber.
  • the performance of the OTFTs usually degrade in air and their relatively low mobility often specifies large operation voltage (e.g., up to about 200 V), which is not desirable for practical applications in E-skins.
  • some embodiments are directed to a design of conductive microstructured air gaps (CMAGs) to replace a microstructured dielectric, in which the overall capacitance is solely or primarily determined by the highly compressible microstructured air gaps with little contribution from a less compressible thick elastomer, realizing a "true" microstructured air-gap device with an ultrahigh sensitivity and fast response time.
  • CMAGs are integrated with 2D semiconductor MoS 2 transistors to create a CMAG-M0S 2 E-skin with further enhanced pressure sensing performance.
  • the capacitance-based E-skins deliver an impressive sensitivity of up to about 770.4 kPa "1 (or more) at a very low operation voltage of about 1.5 V, far exceeding the highest sensitivity (about 4.5 kPa "1 ) achieved in some other capacitive pressure sensors.
  • the CMAG-M0S 2 E-skins exhibit an unprecedented sensitivity of up to about 2.61 x 10 7 kPa "1 (or more), more than 5 orders of magnitude better than other reported transistor-based pressure sensors (about 192 kPa "1 ).
  • the CMAG-MoS 2 E-skin exhibits many other favorable features, including ultrafast response time ( ⁇ about 0.15 ms vs.
  • the CMAGs are composed of a regular array of microstructured pyramids fabricated by casting an elastomer (polydimethylsiloxane (PDMS)) in a silicon mold to form a top electrode layer including a base layer 100 composed of the elastomer and the microstructured pyramids as protrusions composed of the elastomer, followed by direct deposition of a conductive coating on the microstructured pyramids to form conductive microstructures 102.
  • PDMS polydimethylsiloxane
  • the sizes (heights and widths) and periodicity of pyramids can be readily tailored for specific pressure sensing specifications.
  • the CMAG- based flexible capacitive E-skin was assembled by laminating the conductive microstructured PDMS pyramid array (supported on a polyethylene terephthalate (PET) substrate 104) and a flexible PET substrate 106 with a bottom electrode layer 108 composed of a continuous layer of Cr/Au thin film (about 20 nm/about 80 nm) and an A1 2 0 3 dielectric layer 110 (about 30 nm) ( Figure la-b), which allows large-area, low-cost, scalable fabrication of a matrix array of pressure sensing devices.
  • PET polyethylene terephthalate
  • the transistor- based E-skins are fabricated by integrating the top electrode layer including the CMAGs with a 2D MoS 2 transistor, with the dielectric layer 110 disposed in between ( Figure lc).
  • the 2D MoS 2 transistor (supported on a silicon dioxide (Si0 2 ) substrate 118)) includes a source electrode 112, a drain electrode 114, and a channel 116 composed of MoS 2 and extending between the source electrode 112 and the drain electrode 114.
  • Figure Id shows a scanning electron microscope (SEM) image of the conductive microstructured PDMS, which shows a highly uniform array of micro-pyramids.
  • the design of the CMAGs can be used to create higher pressure sensitivity, fast response time, and pressure sensing tunability of capacitance-based, transistor-based, or related pressure sensors (Figure la-d). Unlike other microstructured air-gap devices, which usually exhibit relatively lower pressure sensitivity and slower response time due to (i) less compressible dielectrics, (ii) a large thickness of an elastomer (about 10-500 ⁇ ) that contributes to the denominator in the normalized capacitance change, and (iii) the natural viscoelastic behavior of elastomers, the design of the CMAGs provides a "real" microstructured air-gap device (Figure 2b) which can enhance the pressure sensitivity and improve the response time without the unwanted effect caused by a less compressible, thick microstructured elastomer.
  • the integration of the CMAGs as a pressure sensitive dielectric with gate-absent transistors can amplify the sensing signal, dramatically enhancing the pressure sensitivity and SNR.
  • the normalized capacitance change, sensitivity, and SNR of this structure are governed by the thickness change of the air gap ⁇ Ad Air ) and the final thickness of the elastomer and air dielectrics (d' PDM s and d' Air ).
  • the thickness of air gaps is about 2-3 ⁇ and the thickness of the elastomer is about 10-500 ⁇ .
  • d' PDM s ( ⁇ d PDM s) in equation (1) dominates the pressure sensing performance. Therefore, in this design, the thinner the elastomer dielectric, the higher the sensitivity and SNR of the E-skin.
  • the capacitance is solely or primarily approximately contributed by the air-gap component, so the change of the capacitance under an applied pressure is determined by the deformation of the microstructured air gaps without considering the effects of the elastomer dielectric, which leads to greatly enhanced sensitivity, normalized capacitance change, and SNR.
  • the normalized capacitance change for the CMAG devices can be expresses as:
  • the device can exhibit an extraordinary sensitivity up to about 330 kPa "1 (Figure 2d), which is considerably higher than those achieved in other devices: 0.005 kPa “1 ; 0.21 kPa “1 ; 0.55 kPa “1 ; 0.55-0.58 kPa “1 ; 1.5 kPa “1 .
  • a moderately high sensitivity of about 44.3 kPa "1 was achieved in a broader pressure sensing range (about 0-5 kPa) ( Figure 9). With such high sensitivity, the device can respond to lightweight substances such as tiny pieces of paper (the pressure of a single piece of paper corresponds to about 0.76 Pa).
  • the measured capacitance changes with increasing number of pieces of paper show highly reproducible results even at ultralow pressure regime ( ⁇ about 8 Pa when 10 pieces of paper are loaded) (Figure 2e).
  • the corresponding sensitivity at ultralow pressure regime can reach up to about 36.6 kPa "1 (Figure 2f), along with a minimum detectable pressure of about 0.76 Pa, which far outperforms other types of pressure sensors.
  • the flexible E-skins constructed on PET are also highly stable against repeated bending cycles.
  • the bending stability test shows that the device exhibits stable performance up to about 1,000 bending cycles while it was bent on a curved surface with a bending radius of about 32.5 mm, which is similar to the radius of a human wrist (Figure 10).
  • Pyramid #1 (height of about 4.1 ⁇ , width of about 7.5 ⁇ , periodicity of about 15.0 ⁇ ) with smaller conductive pyramids and smaller periodicity exhibits higher normalized capacitance change and higher sensitivity but narrower pressure sensing range compared to Pyramid #2 (height of about 12 ⁇ , width of about 20 ⁇ , periodicity of about 100 ⁇ ) with larger conductive pyramids and wider periodicity (Figure 3a-d).
  • Pyramid #2 has more space to deform before the conductive microstructured pyramids touch a bottom surface, resulting in a wider pressure sensing range.
  • E-skins from CMAG-MoS? transistors are particularly attractive for several reasons, such as signal amplification by directly converting a capacitance signal to source-drain current, the capability of integrating tactile sensors by constructing active matrix arrays that can provide faster scan rates and less cross-talk between each pixel, and so forth.
  • Comparative transistor- based pressure sensors are usually fabricated using an organic polymer, with relatively low electrical performance, poor air and thermal stability, and large operation voltage of up to about 200 V, which are difficult to implement for practical applications.
  • some embodiments are directed to a design of E-skin integrating MoS 2 transistors with CMAG gates ( Figure lc).
  • the CMAGs offer "true" microstructured air gaps without unwanted effects caused by a less compressible thick dielectric, and few-layer MoS 2 is chosen as a semiconducting channel for its higher electron mobility (about 10-100 cm 2 /V-s), higher current on/off ratio (about 1 x 10 8 ), excellent mechanical flexibility and air stability.
  • the design can lead to unprecedented sensitivity, along with ultrafast response time, lower power consumption, and long-term air stability and robustness.
  • the pressure sensing performance of the devices can be determined by:
  • I sd j- M - C (V g - V t ) - V sd (4)
  • I s d, V s d, V t , and V g are the source-drain current and voltage, threshold voltage, and gate voltage, respectively;
  • W, L, ⁇ , and C are denoted as the channel width and length, mobility, and specific gate capacitance, correspondingly.
  • the source-drain current is proportional to the specific gate capacitance that allows I s d to respond quickly to the change in an applied pressure.
  • the applied pressure can readily vary the air-gap thickness within the CMAGs, and thus the gate capacitance can be sensitively read out through the source-drain current.
  • the sensitivity and SNR of the devices are related to highly sensitive pressure-dependent CMAGs and affected by the electric performance of the MoS 2 transistors, such as the transconductance and the current on/off ratio.
  • the CMAG-MoS 2 E-skin is operated near the regime with the highest transconductance in the MoS 2 transistor, where the source-drain current can sensitively change upon a small pressure load, leading to an ultrahigh sensitivity.
  • a back gate also can be applied to tune the transconductance of the transistor itself.
  • the CMAG-MoS 2 E-skin exhibits I sd of about 1.45 ⁇ 10 "6 A without applied pressure ( Figure 4a).
  • the pressure sensitivity of the E-skin can reach an unprecedented value of up to about 2.61 ⁇ 10 7 kPa "1 (average sensitivity of about 3.64 ⁇ 10 6 kPa "1 ) in the pressure range of about 0-1.63 kPa ( Figure 4c).
  • the sensitivity and SNR are the highest among various types of E-skins for pressure detection (about 5.8 ⁇ 10 6 , about 1.36 ⁇ 10 5 , and about 4 times greater than the sensitivity of some other capacitance-, transistor-, and resistance-based pressure sensors, respectively).
  • dielectrics on MoS 2 transistors can also be tailored to further lower the operation voltage and broaden the pressure sensing range while maintaining the high sensitivity and SNR.
  • the stability test of the device responding to a load of about 86 Pa demonstrates that the E-skin maintains highly stable performance over about 6,000 loading cycles (Figure 11).
  • Static pressure mapping In order to meet application specifications for healthcare and FDVII, it is desired to scale up E-skin devices and create sensory arrays for monitoring the spatial distribution of pressure information.
  • fabrication is carried out of a flexible 5 x 5 pixel array of a CMAG capacitance-based E-skin with the total device area of about 2.5 ⁇ about 2.5 cm 2 and the area of each pixel of about 6 mm 2 ( Figure 5 a-d).
  • the E-skin array was fabricated by orthogonally integrating 5 stripe-patterned CMAGs as top electrodes (about 3 -mm wide) with 5 parallel bottom electrodes (about 2-mm wide Au strips with 30 nm-thick A1 2 0 3 dielectric) on a PET substrate.
  • a wearable E-skin as a smart device provides a noninvasive way to continually monitor the pulse wave of the radial artery for early detection and prevention of cardiovascular diseases.
  • the E-skin is attached on a position above the radial artery of an adult human wrist ( Figure 5e).
  • the pulse wave signals of two experimental subjects A (about 169-cm-tall female) and B (about 180-cm-tall male) show the heart rates of about 77 b.p.m.
  • both heart rates increase (A: about 120 b.p.m. and B: about 81 b.p.m.) and the pulse waveforms show clear differences compared to the ones before exercising.
  • the real-time pulse wave signals can be obtained at a very low operation voltage of about 0.1 V ( Figure 12), in stark contrast to other devices that specify operation voltage of up to about 100 V.
  • the measured response time of the E-skin is less than about 0.15 ms when a specific acoustic wave was applied (about 7 kHz, about 100 dB, the corresponding pressure of about 2 Pa), which is the threshold of the measurement setup instead of the intrinsic threshold of the device ( Figure 6d).
  • the E-skin can be used as a speech pattern recognition system in human-robot communication, authentication system, aids of speech visualization in teaching/learning languages, wearable speech training aids for the deaf, and so forth.
  • Comparisons of the acoustic waveform measured by a standing microphone and the device show highly similar characteristic peaks and valleys of different words and sentences such as "UCLA”, “Electronic skin”, and "The important thing is not to stop questioning" at about 85 dB (the corresponding pressure of about 0.356 Pa), which also indicates the minimum pressure detection ⁇ about 0.4 Pa ( Figure 6e, Figure 13a-b).
  • the auditory spectrograms of a computer-controlled speaker played "U-C-L-A" twice were analysed by using the short-time Fourier transform (STFT) ( Figure 6f).
  • STFT short-time Fourier transform
  • Figure 6f The repeatable characteristic peaks and patterns of the acoustic waveforms and the auditory spectrograms demonstrate the E-skin is very reliable and stable for recognizing the specific words and sentences.
  • demonstration of the remote pressure monitoring capability of the E-skin is made by transmitting pressure signals to user's cell phones or computers by integrating a system on chip (SoC) with the E-skin, serving as a platform of the signal transduction from externally applied stimuli to electrical signal, conditioning and processing, which provides the real-time remote pressure monitoring ( Figure 14a-b), allowing the pressure sensing information to be conveyed, such as speech patterns or health information (heartbeat pattern and related parameters for diagnosis of arterial stiffness) with remote doctors.
  • SoC system on chip
  • the flexible CMAG capacitance- based E-skin has shown an ultrahigh sensitivity of up to about 770.4 kPa "1 (or more), minimum pressure detection of about 0.76 Pa (or less), broader pressure sensing range of about 0-5 kPa (or more), exceptional tunability, ultrafast response time, and excellent bending stability at very low operation voltage (about 1.5 V or less), allowing large-area, scalable, low-cost, and streamlined fabrication. Its potential applications such as static pressure mapping and real-time health monitoring were also demonstrated.
  • the CMAG- MoS 2 transistor-based E-skin delivers a record-high sensitivity of up to about 2.61 x 10 7 kPa "1 , an extremely fast response time of ⁇ about 0.15 ms, low power consumption (about 9 pW - about 270 nW), minimum pressure detection ⁇ about 0.4 Pa, and outstanding air stability and robustness, allowing the repeatable real-time acoustic waves monitoring, remote pressure monitoring, and human speech pattern recognition.
  • Both E-skins have shown unprecedented sensitivity and excellent performance among different types of E-skins for pressure sensing, which can open up opportunities for ultrasensitive, fast-response, low- power, air-stable and low-cost pressure sensing applications.
  • CMAGs provide "real" microstructured air gaps which can overcome issues faced by other microstructured air-gap pressure sensors (e.g., low pressure sensitivity, slow response time, low SNR, low normalized sensing signals (normalized capacitance or normalized current), and so forth). Also, CMAGs can be readily applied to different types of pressure sensors such as capacitance- and transistor-based pressure sensors.
  • CMAGs can be fabricated by other types of conductive materials for various applications.
  • CMAGs can be formed of conductive materials such as metals, metal alloys, carbon nanotubes (CNTs), graphene, three- dimensional (3D) graphene foams, conductive polymers, and so forth. Criteria of a conductive material used to form CMAGs include (1) conductivity and (2) relative flexibility.
  • CMAGs can be formed by directly casting conductive elastomeric microstructured composites (e.g., elastomers mixed with conductive fillers such as CNTs, graphene, 3D graphene foams, and so forth), instead of coating a conductive layer on a microstructured elastomer.
  • conductive elastomeric microstructured composites e.g., elastomers mixed with conductive fillers such as CNTs, graphene, 3D graphene foams, and so forth
  • conductive elastomeric microstructured composites e.g., elastomers mixed with conductive fillers such as CNTs, graphene, 3D graphene foams, and so forth
  • conductive elastomeric microstructured composites e.g., elastomers mixed with conductive fillers such as CNTs, graphene, 3D graphene foams, and so forth
  • other elastomers can be used in place or in combination with
  • the gate-absent transistors can also be made by various materials (e.g., semiconductor polymers, CNTs, transition metal dichalcogenides (TMD), and so on).
  • the CMAG-based pressure sensors exhibit excellent tunability (e.g., pressure ranges, sensitivity, and so on) by changing the Young's modulus of the supporting layers or substrate, volume fraction of air gaps, geometry and spatial arrangement of conductive pyramids to satisfy various pressure sensing applications.
  • Comparative microstructured air-gap devices have a conductive layer on a flat backside of microstructured PDMS ( Figure 2a). With this design, the total capacitance is approximately contributed by two capacitors in series: an elastomer-based capacitor (which has relatively small change upon compression) and an air-gap capacitor that responds sensitively to the mechanical deformation. Therefore, in this design, the thinner the elastomer dielectric is, the higher the sensitivity and SNR of the E-skin. However, it is of considerable challenge to aggressively shrink the thickness of the elastomer while maintaining the microstructured air gaps, which has thus constrained the normalized capacitance change and sensitivity of such devices.
  • the response time is restricted by the natural viscoelastic behavior of elastomers.
  • the capacitance is approximately solely or primarily contributed by the air-gap component, so the change of the capacitance under an applied pressure is determined by the deformation of the microstructured air gaps without considering the effects of the elastomer dielectric, which leads to greatly enhanced sensitivity, normalized capacitance change, and SNR.
  • this "true" microstructured air-gap design reduces the impact by the unwanted viscoelastic behavior of elastomers, thus leading to a fast response time.
  • the CMAG-based pressure sensors also have one or more of the following advantages:
  • the design of the CMAGs can be applied for different types of pressure sensors.
  • the CMAGs can be integrated with various types of top gate-absent transistors to meet different pressure sensing applications.
  • the structure of the CMAG-based pressure sensors can be fabricated by low-cost solution process, allowing fabrication of large-area pressure sensing arrays.
  • the CMAG-based pressure sensors can be very robust, stable, and reliable by appropriate choice of materials.
  • the operating voltages are relatively low compared to other pressure sensors.
  • the CMAG-based pressure sensors can be applied for advanced practical applications due to their enhanced pressure sensing performance.
  • the CMAG-based pressure sensors can pave a path for advanced pressure sensors and related applications.
  • the CMAG-based pressure sensors can be used for applications such as speech pattern recognition systems, healthcare monitoring (e.g., human pulse wave, heartbeat patterns, breath patterns), acoustic wave detection, remote pressure monitoring, static pressure mapping, and "microphone-like" E-skin.
  • a pressure sensor includes: a first electrode layer; a second electrode layer including a plurality of conductive micro structures extending toward the first electrode layer; and a dielectric layer between the first electrode layer and the second electrode layer.
  • the second electrode layer includes a base layer including a plurality of protrusions, and a conductive coating covering the plurality of protrusions to form the plurality of conductive microstructures.
  • the base layer includes an elastomer
  • the conductive coating includes a conductive material.
  • suitable elastomers include silicones (such as PDMS and silicone rubber), PU, acrylic elastomers, and combinations thereof
  • suitable conductive materials include metals, metal alloys, conductive polymers, or combinations thereof.
  • the second electrode layer includes an elastomer and conductive fillers dispersed in the elastomer.
  • suitable conductive fillers include carbonaceous fillers (such as CNTs, graphene, and 3D graphene foams) and other particulate fillers formed of conductive materials.
  • heights of the plurality of conductive microstructures are in a range of about 1 ⁇ to about 500 ⁇ , about 1 ⁇ to about 400 ⁇ , about 1 ⁇ to about 300 ⁇ , about 1 ⁇ to about 200 ⁇ , about 1 ⁇ to about 100 ⁇ , or about 1 ⁇ to about 50 ⁇
  • widths of the plurality of conductive microstructures are in a range of about 1 ⁇ to about 500 ⁇ , about 1 ⁇ to about 400 ⁇ , about 1 ⁇ to about 300 ⁇ , about 1 ⁇ to about 200 ⁇ , about 1 ⁇ to about 100 ⁇ , or about 1 ⁇ to about 50 ⁇
  • a periodicity of the plurality of conductive microstructures are in a range of about 1 ⁇ to about 500 ⁇ , about 1 ⁇ to about 400 ⁇ , about 1 ⁇ to about 300 ⁇ , about 1 ⁇ to about 200 ⁇ , about 1 ⁇ to about 100 ⁇ , or about 1 ⁇ to about 50 ⁇ .
  • the plurality of conductive microstructures are spaced apart to form gaps therebetween.
  • the dielectric layer includes a ceramic material (such as a metal oxide, a non-metal oxide, a metal nitride, or a non-metal nitride), a polymer, or a combination thereof.
  • a ceramic material such as a metal oxide, a non-metal oxide, a metal nitride, or a non-metal nitride
  • the first electrode layer includes a conductive material.
  • suitable conductive materials include those set forth for the second electrode layer.
  • the pressure sensor further includes a first substrate supporting the first electrode layer and affixed to a side of the first electrode layer facing away from the second electrode layer.
  • the first substrate, the first electrode layer, and the dielectric layer constitute a first stack.
  • the pressure sensor further includes a second substrate supporting the second electrode layer and affixed to a side of the second electrode layer facing away from the first electrode layer.
  • the second substrate and the second electrode layer constitute a second stack.
  • a pressure sensor includes: M elongated strips and N elongated strips.
  • the M elongated strips extend crosswise relative to the N elongated strips to define M ⁇ N intersections, and the pressure sensor has a variable capacitance in response to an applied pressure so as to define M ⁇ N pressure sensor pixels at locations corresponding to the x N intersections.
  • N is 2 or more, 3 or more, 4 or more, or 5 or more.
  • Mis equal to N is 2 or more, 3 or more, 4 or more, or 5 or more.
  • each of the M elongated strips includes the first electrode layer and the dielectric layer as set forth for some embodiments of the first aspect, and each of the N elongated strips includes the second electrode layer as set forth for some embodiments of the first aspect.
  • each of the M elongated strips includes the first stack (constituted of the first substrate, the first electrode layer, and the dielectric layer) as set forth for some embodiments of the first aspect, and each of the N elongated strips includes the second stack (constituted of the second substrate and the second electrode layer) as set forth for some embodiments of the first aspect.
  • a pressure sensor includes: a source electrode; a drain electrode; a channel extending between the source electrode and the drain electrode; an electrode layer including a plurality of conductive microstructures extending toward the channel; and a dielectric layer between the electrode layer and the channel.
  • the electrode layer includes a base layer including a plurality of protrusions, and a conductive coating covering the plurality of protrusions to form the plurality of conductive microstructures.
  • the base layer includes an elastomer
  • the conductive coating includes a conductive material.
  • suitable elastomers and suitable conductive materials include those set forth for some embodiments of the first aspect.
  • the electrode layer includes an elastomer and conductive fillers dispersed in the elastomer.
  • suitable conductive fillers include those set forth for some embodiments of the first aspect.
  • heights, widths, and a periodicity of the plurality of conductive microstructures are in ranges as set forth for some embodiments of the first aspect.
  • the plurality of conductive microstructures are spaced apart to form gaps therebetween.
  • the dielectric layer includes a ceramic material (such as a metal oxide, a non-metal oxide, a metal nitride, or a non-metal nitride), a polymer, or a combination thereof.
  • the channel includes a semiconductor material, such as a semiconductor polymer, CNTs, a transition metal dichalcogenide, or a combination thereof.
  • the source electrode, the drain electrode, the channel, and the dielectric layer constitute a gate-absent transistor, and the electrode layer constitutes a pressure sensitive gate of the gate-absent transistor.
  • the pressure sensor further includes a first substrate supporting the source electrode, the drain electrode, the channel, and the dielectric layer and affixed to a side of the channel facing away from the electrode layer.
  • the first substrate, the source electrode, the drain electrode, the channel, and the dielectric layer constitute a first stack.
  • the pressure sensor further includes a second substrate supporting the electrode layer and affixed to a side of the electrode layer facing away from the channel.
  • the second substrate and the electrode layer constitute a second stack.
  • a pressure sensor includes: M elongated strips and N elongated strips.
  • the M elongated strips extend crosswise relative to the N elongated strips to define M ⁇ N intersections, and the pressure sensor has a variable capacitance in response to an applied pressure so as to define M ⁇ N pressure sensor pixels at locations corresponding to the A/ ⁇ N intersections.
  • M is equal to N.
  • a corresponding one of the M elongated strips includes the source electrode, the drain electrode, the channel, and the dielectric layer as set forth for some embodiments of the third aspect, and a corresponding one of the N elongated strips includes the electrode layer as set forth for some embodiments of the third aspect.
  • a corresponding one of the M elongated strips includes the first stack (constituted of the first substrate, the source electrode, the drain electrode, the channel, and the dielectric layer) as set forth for some embodiments of the third aspect, and a corresponding one of the N elongated strips includes the second stack (constituted of the second substrate and the electrode layer) as set forth for some embodiments of the third aspect.
  • CMAG fabrication The CMAGs were formed by casting PDMS in a prefabricated silicon (Si) mold ( Figure 7).
  • the microstructured Si mold was made from ⁇ 100> Si wafers with about 300-nm-thick Si0 2 .
  • the Si substrate was first patterned using photolithography to produce a square array of open windows with exposed Si0 2 .
  • the exposed Si0 2 was stripped using buffered hydrofluoric acid (BOE), and the remaining Si0 2 was used as a mask for potassium hydroxide (KOH) etching, followed by octadecyltrichlorosilane (OTS) surface treatment to facilitate the subsequent release of PDMS cast from the Si mold.
  • KOH potassium hydroxide
  • OTS octadecyltrichlorosilane
  • a conductive metal thin film (Cr/Au: about 20 nm/about 80 nm) layer was then deposited on the microstructured PDMS by electron-beam (e-beam) evaporation.
  • e-beam electron-beam
  • a rotating sample holder was used during the e-beam process to ensure a continuous conductive layer covering the entire microstructured surface.
  • a flexible 5 x 5 capacitance-based E-skin array was assembled by orthogonally laminating 5 conductive microstructured PDMS strips (about 3 mm wide, supported on a PET supporting layer) on 5 parallel electrodes strips (about 2 mm wide, covered by about 30-nm-thick A1 2 0 3 dielectric) on a PET substrate.
  • the parallel electrodes were deposited by e-beam evaporation of Cr/Au (about 20 nm/about 80 nm), and A1 2 0 3 dielectric was deposited by atomic layer deposition (ALD).
  • the total area of the array is about 2.5 ⁇ about 2.5 cm 2 and the area of each pixel is about 6 mm 2 .
  • the device for human pulse wave measurement assembled by orthogonally laminating the top stack (CMAGs/PET) on the bottom stack (about 30 nm Al 2 0 3 /about 80 nm Au/about 20 nm Cr/PET) with an overlapping area of about 1 ⁇ about 1 cm 2 .
  • CMAGs/PET top stack
  • M0S 2 E-skin few- layer M0S 2 was exfoliated from commercially available crystals of molybdenite onto Si0 2 substrate followed by lithography process to form the source-drain electrodes (Ti/Au: about 20 nm/about 80 nm).
  • a polymeric dielectric layer was deposited by spin casting a dielectric solution (poly-4-vinylphenol (PVP) mixed with 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (HDA) and triethylamine (TEA) in propylene glycol monomethyl ether acetate (PGMEA)), followed by curing at about 150 °C in air for about 30-60 min. An additional about 5- or about 10-nm-thick AI 2 O 3 was deposited by ALD. The CMAGs were then laminated on top of gate-absent MoS 2 transistors to obtain CMAG-M0S 2 transistor based E- skin devices.
  • PVP poly-4-vinylphenol
  • HDA 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride
  • TEA triethylamine
  • PMEA propylene glycol monomethyl ether acetate
  • P 0 about 20 ⁇ Pa (the reference sound pressure in air)
  • L dB denotes a measured sound pressure level.
  • comparative microstructured air- gap devices include a conductive layer on a flat backside of a microstructured PDMS. With this design, the total capacitance is contributed by two capacitors in series: an elastomer- based capacitor (which has a relatively small change upon compression) and an air-gap capacitor that responds sensitively to mechanical deformation.
  • an elastomer- based capacitor which has a relatively small change upon compression
  • an air-gap capacitor that responds sensitively to mechanical deformation.
  • the comparative structure includes two parallel capacitors in series, with one highly compressible air-gap capacitor and one less compressible PDMS ca acitor.
  • the capacitance change can thus be expressed as:
  • the normalized capacitance change can be expressed as:
  • the stiffness of PDMS is about 0.5-3.7 MPa; and the thickness of PDMS and air gap are about 10-500 ⁇ and about 2-3 ⁇ , respectively.
  • AdpDMS « S PDM S AdAir- the approximated capacitance change equation for the comparative air-gap device can be obtained as follows: [0096] On the contrary, with the proposed conductive air-gap design, the capacitance is solely or primarily contributed by the air-gap component. As a result, capacitance change can be expressed as:
  • a set refers to a collection of one or more objects.
  • a set of objects can include a single object or multiple objects.
  • connection refers to an operational coupling or linking.
  • Connected objects can be directly coupled to one another or can be indirectly coupled to one another, such as via one or more other objects.
  • the terms “substantially” and “about” are used to describe and account for small variations.
  • the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation.
  • the terms can refer to a range of variation of less than or equal to ⁇ 10% of that numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%), less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
  • concentrations, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified. For example, a range of about 1 to about 200 should be understood to include the explicitly recited limits of about 1 and about 200, but also to include individual values such as about 2, about 3, and about 4, and sub-ranges such as about 10 to about 50, about 20 to about 100, and so forth.

Abstract

Un capteur de pression comprend : (1) une première couche d'électrode; (2) une seconde couche d'électrode comprenant de multiples microstructures conductrices s'étendant vers la première couche d'électrode; et (3) une couche diélectrique entre la première couche d'électrode et la seconde couche d'électrode.
PCT/US2018/016506 2017-02-03 2018-02-01 Performance de détection de pression améliorée pour capteurs de pression WO2018144772A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109115376A (zh) * 2018-09-28 2019-01-01 清华大学深圳研究生院 一种电容式柔性压力传感器及其制备方法
CN110455454A (zh) * 2019-06-28 2019-11-15 北京化工大学 一种基于视觉的多阵列点三维力测量方法及其装置
CN110487451A (zh) * 2019-08-27 2019-11-22 清华大学深圳研究生院 一种仿生柔性压力传感器
CN110793674A (zh) * 2019-10-25 2020-02-14 北京化工大学 一种基于视觉的压力传感器阵列及其制造方法
WO2020097505A1 (fr) 2018-11-08 2020-05-14 The Regents Of The University Of California Capteurs de pression capacitifs souples
WO2020251473A1 (fr) 2019-06-10 2020-12-17 National University Of Singapore Structure composite pour capteur de pression et capteur de pression
CN112179529A (zh) * 2020-09-03 2021-01-05 电子科技大学 一种基于弹性微珠的电容型压力传感器及其制备方法
CN112577642A (zh) * 2020-12-08 2021-03-30 杭州电子科技大学 一种精准定位受力、灵敏度可调的柔性触觉传感器
CN113138042A (zh) * 2021-04-30 2021-07-20 温州大学 一种pdms—ps聚合物电介质的电容式柔性压力传感器及其制作工艺
CN113155344A (zh) * 2021-01-25 2021-07-23 电子科技大学 一种具有触觉信息感知功能的柔性电子皮肤器件
CN114486005A (zh) * 2022-01-20 2022-05-13 厦门大学 微结构电容式柔性压力传感器的灵敏度预测方法及应用
WO2023147831A1 (fr) 2022-02-04 2023-08-10 Graspian Aps Capteur tactile, matrice de capteurs tactiles et leurs procédés de production
CN117030079A (zh) * 2023-10-09 2023-11-10 之江实验室 一种宽量程柔性压力传感器及其制备方法
US11839453B2 (en) 2016-03-31 2023-12-12 The Regents Of The University Of California Soft capacitive pressure sensors
KR102659978B1 (ko) 2022-06-14 2024-04-22 광운대학교 산학협력단 이종 구조의 초고감도 정전용량형 촉각 센서 및 그 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875481A (en) * 1973-10-10 1975-04-01 Uniroyal Inc Capacitive weighing mat
US4986136A (en) * 1988-12-07 1991-01-22 Wolfgang Brunner Measuring system
US20040012570A1 (en) * 2002-07-17 2004-01-22 Cross Elisa M. Resistive touch sensor having microstructured conductive layer
US20060016275A1 (en) * 2002-12-12 2006-01-26 Danfoss A/S Tactile sensor element and sensor array
US20100282000A1 (en) * 2009-05-06 2010-11-11 Xsensor Technology Corporation Dielectric textured elastomer in a pressure mapping system
US20120062245A1 (en) * 2010-09-10 2012-03-15 Zhenan Bao Pressure Sensing Apparatuses and Methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875481A (en) * 1973-10-10 1975-04-01 Uniroyal Inc Capacitive weighing mat
US4986136A (en) * 1988-12-07 1991-01-22 Wolfgang Brunner Measuring system
US20040012570A1 (en) * 2002-07-17 2004-01-22 Cross Elisa M. Resistive touch sensor having microstructured conductive layer
US20060016275A1 (en) * 2002-12-12 2006-01-26 Danfoss A/S Tactile sensor element and sensor array
US20100282000A1 (en) * 2009-05-06 2010-11-11 Xsensor Technology Corporation Dielectric textured elastomer in a pressure mapping system
US20120062245A1 (en) * 2010-09-10 2012-03-15 Zhenan Bao Pressure Sensing Apparatuses and Methods

Cited By (23)

* Cited by examiner, † Cited by third party
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US11839453B2 (en) 2016-03-31 2023-12-12 The Regents Of The University Of California Soft capacitive pressure sensors
CN109115376A (zh) * 2018-09-28 2019-01-01 清华大学深圳研究生院 一种电容式柔性压力传感器及其制备方法
WO2020097505A1 (fr) 2018-11-08 2020-05-14 The Regents Of The University Of California Capteurs de pression capacitifs souples
CN113348427A (zh) * 2018-11-08 2021-09-03 加利福尼亚大学董事会 软电容式压力传感器
WO2020251473A1 (fr) 2019-06-10 2020-12-17 National University Of Singapore Structure composite pour capteur de pression et capteur de pression
EP3980740A4 (fr) * 2019-06-10 2022-08-10 National University of Singapore Structure composite pour capteur de pression et capteur de pression
CN110455454A (zh) * 2019-06-28 2019-11-15 北京化工大学 一种基于视觉的多阵列点三维力测量方法及其装置
CN110487451A (zh) * 2019-08-27 2019-11-22 清华大学深圳研究生院 一种仿生柔性压力传感器
CN110793674A (zh) * 2019-10-25 2020-02-14 北京化工大学 一种基于视觉的压力传感器阵列及其制造方法
CN112179529B (zh) * 2020-09-03 2021-07-27 电子科技大学 一种基于弹性微珠的电容型压力传感器及其制备方法
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CN113155344B (zh) * 2021-01-25 2022-10-18 电子科技大学 一种具有触觉信息感知功能的柔性电子皮肤器件
CN113155344A (zh) * 2021-01-25 2021-07-23 电子科技大学 一种具有触觉信息感知功能的柔性电子皮肤器件
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CN113138042A (zh) * 2021-04-30 2021-07-20 温州大学 一种pdms—ps聚合物电介质的电容式柔性压力传感器及其制作工艺
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WO2023147831A1 (fr) 2022-02-04 2023-08-10 Graspian Aps Capteur tactile, matrice de capteurs tactiles et leurs procédés de production
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