WO2018137275A1 - 一种mems麦克风 - Google Patents

一种mems麦克风 Download PDF

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Publication number
WO2018137275A1
WO2018137275A1 PCT/CN2017/075592 CN2017075592W WO2018137275A1 WO 2018137275 A1 WO2018137275 A1 WO 2018137275A1 CN 2017075592 W CN2017075592 W CN 2017075592W WO 2018137275 A1 WO2018137275 A1 WO 2018137275A1
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WIPO (PCT)
Prior art keywords
pressure relief
diaphragm
relief hole
mems microphone
pressure
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Ceased
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PCT/CN2017/075592
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English (en)
French (fr)
Inventor
詹竣凯
李俊
蔡孟锦
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Goertek Inc
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Goertek Inc
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Priority to US16/475,506 priority Critical patent/US11974094B2/en
Publication of WO2018137275A1 publication Critical patent/WO2018137275A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to a MEMS microphone, and more particularly to a MEMS microphone having a pressure relief function.
  • MEMS Micro Electro Mechanical Systems
  • the diaphragm and back plate are important components in MEMS microphones.
  • the diaphragm and back plate form capacitors and are integrated on silicon wafers to realize acoustic electricity. Conversion.
  • the traditional diaphragm is made by forming an oxide layer on a silicon substrate, and then depositing a layer of a diaphragm on the oxide layer. After doping and tempering, the desired pattern is etched, and the diaphragm is etched. It is fixed to the substrate by rivet points at its edges. Of course, it is also necessary to extract the electrode from the diaphragm, and change the distance between the diaphragm and the back plate by the vibration of the diaphragm, thereby converting the sound signal into an electrical signal.
  • the MEMS microphone When the MEMS microphone is subjected to mechanical shock, blowing, or falling, the MEMS chip is subjected to a large sound pressure shock, which often causes the diaphragm to be subjected to excessive pressure and damage, thereby causing the entire microphone to fail.
  • a pressure relief device is usually provided on the diaphragm, and the pressure relief device can buffer the shock received by the diaphragm.
  • the disadvantage of this structure is that the number of pressure relief channels must meet the lower limit of the release of the blowing pressure to achieve the desired effect, but opening too many holes in the film will inevitably reduce the overall rigidity of the film; and during the fall, Excessive holes and slotted design tend to cause cracking of the diaphragm and reliability is extremely poor.
  • a MEMS microphone comprising a substrate having a back cavity on which a plate capacitor structure composed of a diaphragm and a back electrode and a support portion is disposed; A pressure relief device is disposed on the membrane, and a pressure maintaining passage is formed between the diaphragm and the back pole The pressure relief device on the diaphragm constitutes the inlet of the pressure maintaining passage.
  • a main pressure relief hole is disposed on the back pole, and the main pressure relief hole is disposed at a position on the back pole relatively far from the pressure relief device, wherein the pressure maintaining channel is located on the diaphragm and the back pole The area between the main pressure relief hole and the pressure relief device is enclosed.
  • the main pressure relief hole has a pore diameter of between 5 and 10 ⁇ m.
  • the pressure relief device is located in a central region of the diaphragm, and the main pressure relief hole is distributed in a circumferential direction of the edge of the back pole.
  • the pressure relief device is evenly distributed at an edge position of the diaphragm, and the main pressure relief hole is disposed at a central portion of the back pole.
  • the pressure relief device and the main pressure relief hole are respectively disposed at opposite ends of the diaphragm and the back pole.
  • a secondary pressure relief hole is disposed on the back pole at a position other than the main pressure relief hole, and a diameter of the secondary pressure relief hole is smaller than a main pressure relief hole.
  • the aperture of the secondary relief hole on the back electrode located in the pressure maintaining channel region is between 2.5-5 ⁇ m.
  • the secondary pressure relief holes are distributed within a range of 50 ⁇ m from the pressure relief device.
  • the pressure relief device is a valve flap structure or a hole structure.
  • the microphone of the invention can compete with the instantaneous impact force received by the outside of the diaphragm through the air pressure entering the pressure maintaining passage to obtain the dynamic balance between the two, and can well buffer the impact force received by the diaphragm;
  • the pressure relief mode of this structure makes it unnecessary to carry out excessive pressure relief design on the diaphragm to ensure the reliability of the diaphragm.
  • a pressure relief device is usually provided on the diaphragm, and the pressure relief device can absorb the shock received by the diaphragm.
  • the disadvantage of this structure is that the number of pressure relief channels must meet the lower limit of the release of the blowing pressure to achieve the desired effect, but opening too many holes in the film will inevitably reduce the overall rigidity of the film; and during the fall, Excessive holes and slotted design tend to cause cracking of the diaphragm and reliability is extremely poor. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • FIG. 1 is a schematic view showing the structure of a first embodiment of a microphone of the present invention.
  • FIG. 2 is a schematic view showing the structure of a second embodiment of the microphone of the present invention.
  • the present invention discloses a MEMS microphone comprising a substrate 1 having a back cavity on which a diaphragm 3 and a backing pole 5 are disposed.
  • the diaphragm 3 and the back electrode 5 of the present invention may be formed on the substrate 1 by sequential deposition.
  • the substrate 1 may be made of a single crystal silicon material, and the diaphragm 3 and the back electrode 5 may be monocrystalline silicon or
  • the polysilicon material, the selection of such materials, and the deposition process are well known to those skilled in the art and will not be specifically described herein.
  • the back electrode 5 and the diaphragm 3 constitute a plate capacitor structure, and the plate capacitor structure may be, for example, a manner in which the back electrode 5 is on the bottom and the diaphragm 3 is below, or the back electrode 5 is on the bottom and the diaphragm 3 is in the On the way.
  • the technical solution of the present invention will be described by taking the structure of the plate capacitor having the back electrode 5 on the upper side and the diaphragm 3 as an example.
  • an insulating layer 2 is provided at a position connected between the diaphragm 3 and the substrate 1, and the insulating layer 2 may be oxidized by a person skilled in the art. Silicon material.
  • a support portion 4 for supporting is further disposed between the back electrode 5 and the diaphragm 3, and the support portion 4 is The insulation between the back pole 5 and the diaphragm 3 can also be ensured while supporting the back pole 5.
  • the MEMS microphone structure of such a capacitor is well known to those skilled in the art and will not be described in detail herein.
  • a pressure relief device is further disposed on the diaphragm 3, and when subjected to a large sound pressure caused by, for example, mechanical shock, air blowing, or falling, the pressure relief device forms a pressure relief path to achieve The purpose of pressure relief.
  • the pressure relief device of the present invention may be a valve flap structure 30, with reference to Figure 1; it may also be a bore structure 32, see Figure 2.
  • a pressure relief passage can be effectively formed on the diaphragm 3.
  • Such a valve flap structure or a pressure relief device for a hole structure is well known to those skilled in the art.
  • a pressure maintaining passage 31 is formed between the diaphragm 3 and the back pole 5, and a pressure relief device on the diaphragm 3 constitutes an inlet of the pressure maintaining passage 31, referring to FIG. 2.
  • the edge of the back pole 5 is supported on the diaphragm 3 through the support portion 4.
  • the microphone of the present invention can achieve the dynamic balance between the air pressure entering the pressure maintaining passage 31 and the instantaneous impact force received by the outside of the diaphragm to better absorb the impact force received by the diaphragm;
  • the pressure relief method of this structure makes it unnecessary to carry out excessive pressure relief design on the diaphragm, thereby ensuring the reliability of the diaphragm.
  • FIG. 1 when the microphone is normally operated, since the diaphragm 3 is deformed toward or away from the back pole 5, in order to improve the performance of the diaphragm 3, a main vent is provided on the back pole 5.
  • the pressure hole 51, the aperture of the main pressure relief hole can be set between 5-10 ⁇ m.
  • the air pressure between the diaphragm 3 and the back pole 5 can be equalized by the main pressure relief hole 51, thereby reducing the vibration of the diaphragm 3 The air is damped.
  • the main pressure relief hole 51 constitutes the outlet of the pressure maintaining passage 31, which is disadvantageous for the pressure maintaining passage 31 to perform its own function.
  • the main pressure relief hole 51 is disposed on the back pole 5 at a position relatively far from the valve flap structure 30. At this time, the pressure maintaining passage 31 is located on the main pressure relief hole from the diaphragm 3 and the back pole 5. 51. The area between the flap structures 30 is enclosed.
  • the valve flap structure 30 may be located in a central portion of the diaphragm 3, and the main pressure relief hole 51 may be disposed in plurality, evenly distributed on the edge of the back pole 5. Weekly. In another specific embodiment of the present invention, the valve flap structure 30 is provided in plurality, evenly distributed at the edge position of the diaphragm 3, and the main pressure relief hole 51 is disposed in the central portion of the back pole 5.
  • valve flap structure 30 and the main pressure relief hole 51 are respectively disposed at opposite ends of the diaphragm 3 and the back pole 5; for example, the valve flap structure 30 is distributed on the left side of the diaphragm 3, and the main The pressure relief hole 51 is disposed at the right side of the back pole 5 such that the path of the pressure maintaining passage 31 is long.
  • a pressure relief hole is usually provided on the entire back pole 5, but the presence of these pressure relief holes is not conducive to the pressure holding function of the pressure maintaining passage, that is, through the valve The airflow of the valve structure quickly leaks through these pressure relief holes.
  • the microphone of the present invention is further provided with a secondary pressure relief hole 50 on the back pole 5 at a position other than the main pressure relief hole 51, and the aperture of the secondary pressure relief hole 50 is smaller than the main pressure relief hole 51. .
  • the secondary pressure relief hole 50 needs to be configured to not affect the pressure holding function of the pressure maintaining passage 31 at the time of falling, and does not affect the pressure equalizing effect between the back electrode and the diaphragm when the microphone is vibrating.
  • the aperture of the secondary relief hole in the region of the pressure maintaining passage on the back pole is between 2.5 and 5 ⁇ m.
  • the auxiliary pressure relief hole 50 may be disposed on the back pole 5 at a position between the main pressure relief hole 51 and the valve flap structure 30, and enters the pressure maintaining passage 31 due to the small aperture of the secondary pressure relief hole 50.
  • the air pressure does not leak out quickly through the secondary pressure relief hole 50, so that the pressure maintaining passage 31 can still function as a pressure maintaining function.
  • the excessively large aperture of the secondary pressure relief hole 50 is not conducive to the holding pressure of the pressure maintaining passage 31, and the excessively small aperture is disadvantageous for the pressure equalization effect between the diaphragm and the back pole, which affects the performance of the diaphragm.
  • the area of the secondary pressure relief hole 50 distributed on the back pole 5 is too large, and the distribution of the main pressure relief hole is too small, which also affects the performance of the diaphragm during normal operation.
  • the secondary pressure relief holes 50 are distributed within a range of 50 ⁇ m from the valve flap structure.
  • those skilled in the art can select a suitable aperture, a suitable number of main pressure relief holes, a secondary pressure relief hole, and a distribution position between the main pressure relief hole, the secondary pressure relief hole and the pressure relief device to meet the design requirements. .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明公开了一种MEMS麦克风，包括具有背腔的衬底，在所述衬底上设置有由振膜和背极、支撑部构成的平板电容器结构；在所述振膜上设置有泄压装置，在所述振膜与背极之间形成了保压通道，所述振膜上的泄压装置构成了该保压通道的入口。本发明的麦克风，通过进入至保压通道内的气压与振膜外界受到的瞬间冲击力进行对抗，来获得二者之间的动态平衡，可以很好地缓冲振膜所受到的冲击力；采用这种结构的泄压方式，使得不用在振膜上进行过多的泄压设计，保证了振膜的可靠性。

Description

一种MEMS麦克风 技术领域
本发明涉及一种MEMS麦克风，更准确地说，涉及一种具有泄压功能的MEMS麦克风。
背景技术
MEMS(微型机电系统)麦克风是基于MEMS技术制造的麦克风，其中的振膜、背极板是MEMS麦克风中的重要部件，振膜、背极板构成了电容器并集成在硅晶片上，实现声电的转换。传统的振膜的制作工艺是在硅基底上做一层氧化层，然后在氧化层上利用沉积的方式制作一层振膜，经过掺杂、回火后，蚀刻出所所需的图形，振膜通过其边缘的铆钉点固定在基底上。当然，还需要从振膜上引出电极，通过振膜的振动，改变振膜与背极板之间的距离，从而将声音信号转换为电信号。
当MEMS麦克风受到机械冲击、吹气、跌落时，其中的MEMS芯片会受到较大的声压冲击，这往往会使振膜受到过大的压力而导致破裂受损，从而导致整个麦克风的失效。为了解决此问题，通常会在振膜上设置泄压装置，通过该泄压装置可以缓冲振膜所受到的冲击。这种结构存在的弊端是：泄压通道的数量必须满足吹气压力释放的下限才能达到预期效果，但是在薄膜上开过多的孔洞，势必会降低薄膜的整体刚性；而且在跌落过程中，过多的孔洞与开槽设计易使振膜产生破裂，可靠性极差。
发明内容
本发明的一个目的是提供一种MEMS麦克风的新技术方案。
根据本发明的第一方面，提供了一种MEMS麦克风，包括具有背腔的衬底，在所述衬底上设置有由振膜和背极、支撑部构成的平板电容器结构；在所述振膜上设置有泄压装置，在所述振膜与背极之间形成了保压通 道，所述振膜上的泄压装置构成了该保压通道的入口。
可选地，在所述背极上设置有主泄压孔，所述主泄压孔设置在背极上相对远离泄压装置的位置上，所述保压通道由振膜、背极上位于主泄压孔、泄压装置之间的区域围成。
可选地，所述主泄压孔的孔径在5-10μm之间。
可选地，所述泄压装置位于振膜的中部区域，所述主泄压孔分布在背极边缘的周向上。
可选地，所述泄压装置均匀分布在振膜的边缘位置，所述主泄压孔设置在背极的中部区域。
可选地，所述泄压装置、主泄压孔分别设置在振膜、背极上相对的两端。
可选地，在所述背极上除主泄压孔的位置还设置有副泄压孔，且所述副泄压孔的孔径小于主泄压孔。
可选地，所述背极上位于保压通道区域的副泄压孔的孔径在2.5-5μm之间。
可选地，所述副泄压孔分布在距离泄压装置50μm的范围内。
可选地，所述泄压装置为阀瓣结构或者孔结构。
本发明的麦克风，通过进入至保压通道内的气压与振膜外界受到的瞬间冲击力进行对抗，来获得二者之间的动态平衡，可以很好地缓冲振膜所受到的冲击力；采用这种结构的泄压方式，使得不用在振膜上进行过多的泄压设计，保证了振膜的可靠性。
本发明的发明人发现，在现有技术中，通常会在振膜上设置泄压装置，通过该泄压装置可以缓冲振膜所受到的冲击。这种结构存在的弊端是：泄压通道的数量必须满足吹气压力释放的下限才能达到预期效果，但是在薄膜上开过多的孔洞，势必会降低薄膜的整体刚性；而且在跌落过程中，过多的孔洞与开槽设计易使振膜产生破裂，可靠性极差。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其 它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是本发明麦克风第一实施方式的结构示意图。
图2是本发明麦克风第二实施方式的结构示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术和设备可能不作详细讨论，但在适当情况下，所述技术和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1，本发明公开了一种MEMS麦克风，包括具有背腔的衬底1，在所述衬底1上设置有振膜3以及背极5。本发明的振膜3、背极5可通过依次沉积的方式形成在衬底1上，所述衬底1可以采用单晶硅材料，所述振膜3、背极5可以采用单晶硅或者多晶硅材料，这种材料的选择以及沉积的工艺属于本领域技术人员的公知常识，在此不再具体说明。
所述背极5与振膜3构成了平板电容器结构，该平板电容器结构例如可以是背极5在上、振膜3在下的方式，也可以是背极5在下、振膜3在 上的方式。为了便于描述，现以背极5在上、振膜3在下的平板电容器结构为例来描述本发明的技术方案。
为了实现振膜3与衬底1之间的绝缘，在所述振膜3与衬底1之间连接的位置设置有绝缘层2，该绝缘层2可以采用本领域技术人员所熟知的二氧化硅材料。为了保证背极5与振膜3之间可以构成具有一定间隙的平板电容器结构，在所述背极5与振膜3之间还设置有用于支撑的支撑部4，所述支撑部4在起到支撑背极5的同时，还可以保证背极5与振膜3之间的绝缘。这种电容器的MEMS麦克风结构属于本领域技术人员的公知常识，在此不再具体说明。
本发明的麦克风，在所述振膜3上还设置有泄压装置，当受到例如机械冲击、吹气、跌落所带来的较大声压时，该泄压装置形成了泄压路径，以达到泄压的目的。本发明的泄压装置可以是阀瓣结构30，参考图1；也可以是孔结构32，参考图2。通过图1示出的阀瓣结构30或者图2示出的孔结构32，可以有效地在振膜3上形成泄压通道。这种阀瓣结构或者孔结构的泄压装置属于本领域技术人员的公知常识。
本发明的麦克风，在所述振膜3与背极5之间形成了保压通道31，所述振膜3上的泄压装置则构成了该保压通道31的入口，参考图1、图2。所述背极5的边缘通过支撑部4支撑在振膜3上，当麦克风受到例如机械冲击、吹气、跌落所带来的较大声压时，该较大的气流会从泄压装置进入保压通道31内，由此可在保压通道31内形成一定的压力，该压力作用在振膜3的内侧，由此可以与振膜3外侧受到的冲击力达到动态平衡，以减小振膜3外侧所承受的瞬间冲击力。本发明的麦克风，通过进入至保压通道31内的气压与振膜外界受到的瞬间冲击力进行对抗，来获得二者之间的动态平衡，可以很好地缓冲振膜所受到的冲击力；采用这种结构的泄压方式，使得不用在振膜上进行过多的泄压设计，保证了振膜的可靠性。
以图1为例，在麦克风正常工作的时候，由于振膜3会发生朝向或者远离背极5的弯曲变形，因此，为了提高振膜3的性能，在所述背极5上设置有主泄压孔51，该主泄压孔的孔径可以设置在5-10μm之间。通过该主泄压孔51可以均衡振膜3与背极5之间的气压，从而降低振膜3振动时 受到的空气阻尼。
但是该主泄压孔51构成了保压通道31的出口，这不利于保压通道31发挥其本身的作用。为了解决此问题，将主泄压孔51设置在背极5上相对远离阀瓣结构30的位置上，此时，所述保压通道31由振膜3、背极5上位于主泄压孔51、阀瓣结构30之间的区域围成。
当外界的气流经过阀瓣结构30进入到振膜3与背极5之间的位置后，需要经过一段较长的路径才能从主泄压孔51出去。因此，在气流沿主泄压孔51泄露之前，位于主泄压孔51与阀瓣结构30之间的保压通道31依然可以发挥其保压的作用，使得进入至保压通道31的气流依然可以与振膜3外侧受到的较大冲击力进行抗衡。
在本发明一个具体的实施方式中，参考图1，所述阀瓣结构30可以位于振膜3的中部区域，所述主泄压孔51可以设置有多个，均匀分布在背极5边缘的周向上。在本发明另一具体的实施方式中，所述阀瓣结构30设置有多个，均匀分布在振膜3的边缘位置，所述主泄压孔51则设置在背极5的中部区域。还可以是，所述阀瓣结构30、主泄压孔51分别设置在振膜3、背极5上相对的两端；例如所述阀瓣结构30分布在振膜3的左侧，而主泄压孔51则设置在背极5的右侧位置，使得所述保压通道31的路径长。
为了可以进一步降低振膜工作时所受到的空气阻尼，通常会在整个背极5上设置泄压孔，但是这些泄压孔的存在则不利于保压通道的保压功能，也就是说经过阀瓣结构的气流会快速通过这些泄压孔泄露出去。为了解决此问题，本发明的麦克风，在所述背极5上除主泄压孔51的位置还设置有副泄压孔50，且所述副泄压孔50的孔径小于主泄压孔51。该副泄压孔50需要被配置为即不影响跌落时保压通道31的保压功能，也不影响麦克风振动工作时背极与振膜之间的均压效果。
例如，所述背极上位于保压通道区域的副泄压孔的孔径在2.5-5μm之间。所述副泄压孔50可以设置在背极5上位于主泄压孔51、阀瓣结构30之间的位置上，由于副泄压孔50的孔径小，使得进入到保压通道31内的气压不会很快地经过副泄压孔50泄露出去，因此依然可以使保压通道31发挥其保压的功能。
副泄压孔50过大的孔径不利于保压通道31的保压，过小的孔径则不利于振膜与背极之间的均压效果，影响振膜的性能。而且，副泄压孔50分布在背极5上的面积过大、主泄压孔分布的过小，也影响振膜正常工作时的性能。在本发明一个具体的实施方式中，所述副泄压孔50分布在距离所述阀瓣结构50μm的范围内。当然，本领域技术人员可以选择合适孔径、合适数量的主泄压孔、副泄压孔，以及选择主泄压孔、副泄压孔与泄压装置之间的分布位置，以满足设计的需求。
虽然已经通过示例对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种MEMS麦克风，其特征在于：包括具有背腔的衬底(1)，在所述衬底(1)上设置有由振膜(3)和背极(5)、支撑部(4)构成的平板电容器结构；在所述振膜(3)上设置有泄压装置，在所述振膜(3)与背极(5)之间形成了保压通道(31)，所述振膜(3)上的泄压装置构成了该保压通道(31)的入口。
  2. 根据权利要求1所述的MEMS麦克风，其特征在于：在所述背极(5)上设置有主泄压孔(51)，所述主泄压孔(51)设置在背极(5)上相对远离泄压装置的位置上，所述保压通道(31)由振膜(3)、背极(5)上位于主泄压孔(51)、泄压装置之间的区域围成。
  3. 根据权利要求2所述的MEMS麦克风，其特征在于：所述主泄压孔(51)的孔径在5-10μm之间。
  4. 根据权利要求2所述的MEMS麦克风，其特征在于：所述泄压装置位于振膜(3)的中部区域，所述主泄压孔(51)分布在背极(5)边缘的周向上。
  5. 根据权利要求2所述的MEMS麦克风，其特征在于：所述泄压装置均匀分布在振膜(3)的边缘位置，所述主泄压孔(51)设置在背极(5)的中部区域。
  6. 根据权利要求2所述的MEMS麦克风，其特征在于：所述泄压装置、主泄压孔(51)分别设置在振膜(3)、背极(5)上相对的两端。
  7. 根据权利要求2至6中任一项所述的MEMS麦克风，其特征在于：在所述背极(5)上除主泄压孔(51)的位置还设置有副泄压孔(50)，且所述副泄压孔(50)的孔径小于主泄压孔(51)。
  8. 根据权利要求7所述的MEMS麦克风，其特征在于：所述背极(5)上位于保压通道区域的副泄压孔(50)的孔径在2.5-5μm之间。
  9. 根据权利要求8所述的MEMS麦克风，其特征在于：所述副泄压孔(50)分布在距离泄压装置50μm的范围内。
  10. 根据权利要求1所述的MEMS麦克风，其特征在于：所述泄压 装置为阀瓣结构(30)或者孔结构(32)。
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