WO2018129148A1 - Détachement et refixation d'un détecteur de rayons x à base de polyimide flexible - Google Patents
Détachement et refixation d'un détecteur de rayons x à base de polyimide flexible Download PDFInfo
- Publication number
- WO2018129148A1 WO2018129148A1 PCT/US2018/012332 US2018012332W WO2018129148A1 WO 2018129148 A1 WO2018129148 A1 WO 2018129148A1 US 2018012332 W US2018012332 W US 2018012332W WO 2018129148 A1 WO2018129148 A1 WO 2018129148A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- image sensor
- adhesive
- sensor array
- flexible
- Prior art date
Links
- 239000004642 Polyimide Substances 0.000 title description 37
- 229920001721 polyimide Polymers 0.000 title description 37
- 239000000758 substrate Substances 0.000 claims abstract description 182
- 239000000853 adhesive Substances 0.000 claims abstract description 42
- 230000001070 adhesive effect Effects 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000012467 final product Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 55
- 239000011521 glass Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 22
- 238000003384 imaging method Methods 0.000 description 19
- 238000012545 processing Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 239000013310 covalent-organic framework Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- MCVAAHQLXUXWLC-UHFFFAOYSA-N [O-2].[O-2].[S-2].[Gd+3].[Gd+3] Chemical compound [O-2].[O-2].[S-2].[Gd+3].[Gd+3] MCVAAHQLXUXWLC-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229920001821 foam rubber Polymers 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/2019—Shielding against direct hits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/36—Devices specially adapted for detecting X-ray radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
L'invention concerne un réseau de capteurs d'images formé sur un premier substrat flexible est supporté par un second substrat flexible fixé à celui-ci. Le second substrat a une surface supérieure avec un adhésif sur celle-ci pour fixer les substrats ensemble. L'adhésif se trouve sur une partie du second substrat directement sous le réseau de capteurs d'images pour permettre la formation sélective du second substrat.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/468,441 US11195874B2 (en) | 2017-01-06 | 2018-01-04 | Detach and reattach of a flexible polyimide based X-ray detector |
EP18701946.8A EP3566248B1 (fr) | 2017-01-06 | 2018-01-04 | Détachement et refixation d'un détecteur de rayons x à base de polyimide flexible |
CN201880006057.9A CN110121780B (zh) | 2017-01-06 | 2018-01-04 | 基于柔性聚酰亚胺的x射线检测器的分离和再附接 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762443023P | 2017-01-06 | 2017-01-06 | |
US62/443,023 | 2017-01-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018129148A1 true WO2018129148A1 (fr) | 2018-07-12 |
Family
ID=61074529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2018/012332 WO2018129148A1 (fr) | 2017-01-06 | 2018-01-04 | Détachement et refixation d'un détecteur de rayons x à base de polyimide flexible |
Country Status (4)
Country | Link |
---|---|
US (1) | US11195874B2 (fr) |
EP (1) | EP3566248B1 (fr) |
CN (1) | CN110121780B (fr) |
WO (1) | WO2018129148A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109887941A (zh) * | 2019-02-20 | 2019-06-14 | 上海奕瑞光电子科技股份有限公司 | 柔性x射线探测器 |
EP3968057A1 (fr) * | 2020-09-11 | 2022-03-16 | InnoCare Optoelectronics Corporation | Dispositif à rayons x |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102466811B1 (ko) * | 2017-12-12 | 2022-11-11 | 엘지디스플레이 주식회사 | 플렉서블 디지털 엑스레이 검출기용 패널 및 그 제조 방법 |
CN114902079A (zh) * | 2019-12-27 | 2022-08-12 | 富士胶片株式会社 | 放射线图像摄影装置的制造方法 |
CN115176177A (zh) | 2020-03-05 | 2022-10-11 | 富士胶片株式会社 | 放射线检测器、放射线图像摄影装置及放射线检测器的制造方法 |
CN112820748B (zh) * | 2020-12-31 | 2024-03-15 | 上海奕瑞光电子科技股份有限公司 | 柔性x射线探测器的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013099652A1 (fr) * | 2011-12-27 | 2013-07-04 | 富士フイルム株式会社 | Grille pour radiographie, son procédé de fabrication et système de radiographie |
US20150060676A1 (en) * | 2013-08-29 | 2015-03-05 | General Electric Company | Organic x-ray detector assembly and method of manufacturing same |
US20160204164A1 (en) * | 2015-01-14 | 2016-07-14 | General Electric Company | Flexible x-ray detector and methods for fabricating the same |
US20160260765A1 (en) * | 2008-12-02 | 2016-09-08 | Arizona Board of Regents, a body Corporate of the State of Arizona, Acting for and on Behalf of Ariz | Dual active layer semiconductor device and method of manufacturing the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI419091B (zh) * | 2009-02-10 | 2013-12-11 | Ind Tech Res Inst | 可轉移的可撓式電子裝置結構及可撓式電子裝置的製造方法 |
US8808483B2 (en) * | 2010-11-05 | 2014-08-19 | Apple Inc. | Method of making a curved touch panel |
JP2013050364A (ja) * | 2011-08-30 | 2013-03-14 | Fujifilm Corp | 放射線画像検出装置 |
KR101909803B1 (ko) * | 2014-05-24 | 2018-10-18 | 가부시키가이샤 가네카 | 알콕시실란 변성 폴리아미드산 용액, 그것을 사용한 적층체 및 플렉시블 디바이스, 및 폴리이미드 필름 및 적층체의 제조 방법 |
US9773853B2 (en) * | 2015-01-09 | 2017-09-26 | Apple Inc. | Organic light-emitting diode display with bent substrate |
US9614168B2 (en) * | 2015-01-12 | 2017-04-04 | Apple Inc. | Flexible display panel with bent substrate |
-
2018
- 2018-01-04 WO PCT/US2018/012332 patent/WO2018129148A1/fr unknown
- 2018-01-04 US US16/468,441 patent/US11195874B2/en active Active
- 2018-01-04 EP EP18701946.8A patent/EP3566248B1/fr active Active
- 2018-01-04 CN CN201880006057.9A patent/CN110121780B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160260765A1 (en) * | 2008-12-02 | 2016-09-08 | Arizona Board of Regents, a body Corporate of the State of Arizona, Acting for and on Behalf of Ariz | Dual active layer semiconductor device and method of manufacturing the same |
WO2013099652A1 (fr) * | 2011-12-27 | 2013-07-04 | 富士フイルム株式会社 | Grille pour radiographie, son procédé de fabrication et système de radiographie |
US20150060676A1 (en) * | 2013-08-29 | 2015-03-05 | General Electric Company | Organic x-ray detector assembly and method of manufacturing same |
US20160204164A1 (en) * | 2015-01-14 | 2016-07-14 | General Electric Company | Flexible x-ray detector and methods for fabricating the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109887941A (zh) * | 2019-02-20 | 2019-06-14 | 上海奕瑞光电子科技股份有限公司 | 柔性x射线探测器 |
EP3968057A1 (fr) * | 2020-09-11 | 2022-03-16 | InnoCare Optoelectronics Corporation | Dispositif à rayons x |
US11675094B2 (en) | 2020-09-11 | 2023-06-13 | Innocare Optoelectronics Corporation | X-ray device |
Also Published As
Publication number | Publication date |
---|---|
US11195874B2 (en) | 2021-12-07 |
CN110121780B (zh) | 2023-04-18 |
EP3566248A1 (fr) | 2019-11-13 |
US20190333961A1 (en) | 2019-10-31 |
CN110121780A (zh) | 2019-08-13 |
EP3566248B1 (fr) | 2021-09-22 |
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